WO2016117268A1 - 封止用シート - Google Patents

封止用シート Download PDF

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Publication number
WO2016117268A1
WO2016117268A1 PCT/JP2015/085766 JP2015085766W WO2016117268A1 WO 2016117268 A1 WO2016117268 A1 WO 2016117268A1 JP 2015085766 W JP2015085766 W JP 2015085766W WO 2016117268 A1 WO2016117268 A1 WO 2016117268A1
Authority
WO
WIPO (PCT)
Prior art keywords
sealing sheet
thickness
pressure
resin
sealing
Prior art date
Application number
PCT/JP2015/085766
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
石井　淳
浩介 盛田
豪士 志賀
智絵 飯野
Original Assignee
日東電工株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Publication of WO2016117268A1 publication Critical patent/WO2016117268A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect

Definitions

  • the width from Y to the outer periphery of the sample is 2.5 cm or less after Step C.
  • the width from the Y to the outer periphery of the sample 100 is 2.5 cm or less, the amount of resin (resin constituting the sealing sheet) that flows outward in the plane direction by the pressure in the flat plate press It can be said that is suppressed more.
  • the epoxy equivalent is 150 to 250 and the softening point or the melting point is 50 to 130 ° C., solid at room temperature. From the viewpoint, triphenylmethane type epoxy resin, cresol novolac type epoxy resin, and biphenyl type epoxy resin are more preferable.
  • phenol resin those having a hydroxyl equivalent weight of 70 to 250 and a softening point of 50 to 110 ° C. are preferably used from the viewpoint of reactivity with the epoxy resin, and phenol phenol is particularly preferable from the viewpoint of high curing reactivity.
  • a novolac resin can be suitably used. From the viewpoint of reliability, low hygroscopic materials such as phenol aralkyl resins and biphenyl aralkyl resins can also be suitably used.
  • the total content of the epoxy resin and the phenol resin in the sealing sheet 40 is preferably 2.5% by weight or more, and more preferably 3.0% by weight or more. Adhesive force with respect to the semiconductor chip 53 can be obtained satisfactorily when it is 2.5% by weight or more.
  • the total content of the epoxy resin and the phenol resin in the sealing sheet 40 is preferably 20% by weight or less, and more preferably 10% by weight or less. Hygroscopicity can be reduced as it is 20 weight% or less.
  • silica powder is preferable, and fused silica powder is more preferable.
  • fused silica powder examples include spherical fused silica powder and crushed fused silica powder. From the viewpoint of fluidity, spherical fused silica powder is preferable. Among these, those having an average particle diameter in the range of 1 to 30 ⁇ m are preferred, and those having a mean particle diameter in the range of 3 to 25 ⁇ m are more preferred.
  • the average particle diameter can be derived, for example, by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.
  • the curing accelerator is not particularly limited as long as it can cure the epoxy resin and the phenol resin, and examples thereof include organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate; 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole.
  • organophosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate
  • 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole.
  • 2-phenyl-4,5-dihydroxymethylimidazole is preferred because the curing reaction does not proceed rapidly even when the temperature during kneading increases, and the sealing sheet 40 can be satisfactorily produced.
  • a coloring material (coloring agent) can be used according to the target color.
  • a color material various dark color materials such as a black color material, a blue color material, and a red color material can be suitably used, and a black color material is particularly suitable.
  • the color material any of a pigment, a dye and the like may be used. Color materials can be used alone or in combination of two or more.
  • the dye any form of dyes such as acid dyes, reactive dyes, direct dyes, disperse dyes, and cationic dyes can be used.
  • the form of the pigment is not particularly limited, and can be appropriately selected from known pigments.
  • the kneaded material after melt-kneading is preferably applied in a high temperature state without cooling.
  • the coating method is not particularly limited, and examples thereof include a bar coating method, a knife coating method, and a slot die method.
  • the temperature at the time of coating is preferably not less than the softening point of each component described above, and considering the thermosetting property and moldability of the epoxy resin, for example, 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C.
  • the heat-expandable microsphere is not particularly limited, and can be appropriately selected from known heat-expandable microspheres (such as various inorganic heat-expandable microspheres and organic heat-expandable microspheres).
  • a microencapsulated foaming agent can be suitably used from the viewpoint of easy mixing operation.
  • thermally expandable microspheres include microspheres in which substances such as isobutane, propane, and pentane that are easily gasified and expanded by heating are encapsulated in an elastic shell.
  • the shell is often formed of a hot-melt material or a material that is destroyed by thermal expansion.
  • the support base material 60 b is a thin plate member that serves as a strength matrix of the temporary fixing material 60. What is necessary is just to select suitably considering the handleability, heat resistance, etc. as a material of the support base material 60b, for example, plastic materials, such as metal materials, such as SUS, polyimide, polyamide imide, polyether ether ketone, polyether sulfone, Glass, a silicon wafer, or the like can be used. Among these, a SUS plate is preferable from the viewpoints of heat resistance, strength, reusability, and the like.
  • a plurality of semiconductor chips 53 are arranged on the prepared temporary fixing material 60 so that the circuit forming surface 53a faces the temporary fixing material 60 and temporarily fixed (see FIG. 5).
  • a known device such as a flip chip bonder or a die bonder can be used for temporarily fixing the semiconductor chip 53.
  • the sealing sheet 40 is used to form a sealing body in which the semiconductor chip is embedded in the sealing sheet by a flat plate press, the thickness of the resin is also near the outer periphery of the sealing sheet 40. Since it is sufficient, the semiconductor chip 53 can be suitably sealed.
  • a rewiring 69 connected to the exposed semiconductor chip 53 is formed on the sealing body 58 (see FIG. 11).
  • Example 2 ⁇ Preparation of sealing sheet> According to the blending ratio shown in Table 1, each component was blended, kneaded and then sheeted to prepare a sealing sheet B having a thickness of 400 ⁇ m.
  • Step A The sealing sheets according to Examples and Comparative Examples were cut into a size of 20 cm in length and 20 cm in width and used as samples. The thickness is 400 ⁇ m.
  • Step C After Step B, the lower flat plate and the upper flat plate were moved away from each other, and the pressure applied in Step B was released.
  • Step D The thickness A of the central portion X of the sample after the step C and the thickness B of Y after the step C (location moved 2 cm toward the central portion X from one side before applying the pressure of the sample) It was measured. Thereafter, the ratio B / A was calculated. The results are shown in Table 1. Here, the thickness A1 is 300 ⁇ m. Therefore, the ratio A / A1 and the ratio B / A1 were also calculated. The results are shown in Table 1. In Comparative Example 1, the ratio B / A was 0.69 although the viscosity at 90 ° C. described later was relatively high. The reason is considered as follows.
  • the sheet thickness recovers like spring elasticity at the center of the sheet, which is difficult to convert the press pressure into a plastic flow as a resin flow.
  • Comparative Example 1 has a high viscosity and is strongly influenced by elastic deformation. Therefore, although the resin flow at the end portion of the sealing sheet also occurs not a little, the influence of elastic deformation occurring at the central portion of the sealing sheet is strong. As a result, the sheet thickness at the center is elastically recovered (springback) and the thickness is increased. From the above, although B is slightly reduced, the value of A is also increased by the elastic recovery of the resin, so the ratio B / A is considered to be reduced to 0.69.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
PCT/JP2015/085766 2015-01-23 2015-12-22 封止用シート WO2016117268A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-011010 2015-01-23
JP2015011010A JP2016136567A (ja) 2015-01-23 2015-01-23 封止用シート

Publications (1)

Publication Number Publication Date
WO2016117268A1 true WO2016117268A1 (ja) 2016-07-28

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PCT/JP2015/085766 WO2016117268A1 (ja) 2015-01-23 2015-12-22 封止用シート

Country Status (3)

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JP (1) JP2016136567A (zh)
TW (1) TW201635446A (zh)
WO (1) WO2016117268A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019225761A1 (ja) * 2018-05-24 2019-11-28 大日本印刷株式会社 自発光型表示体用または直下型バックライト用の封止材シート、自発光型表示体、直下型バックライト

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3690932A4 (en) * 2017-09-29 2021-02-17 Nagase ChemteX Corporation METHOD FOR PRODUCING AN ASSEMBLY STRUCTURE AND FILM USED FOR IT
CN115485820A (zh) * 2021-03-11 2022-12-16 日东电工株式会社 带电极的固化树脂片的制造方法、带电极的固化树脂片及热固性树脂片

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000299333A (ja) * 1999-02-09 2000-10-24 Nitto Denko Corp 半導体装置の製法
JP2013060524A (ja) * 2011-09-13 2013-04-04 Hitachi Chemical Co Ltd フィルム状接着剤、接着シート、半導体装置及びその製造方法
JP2013219286A (ja) * 2012-04-11 2013-10-24 Hitachi Chemical Co Ltd 半導体封止用接着剤及びフィルム状半導体封止用接着剤
WO2014080717A1 (ja) * 2012-11-20 2014-05-30 日東電工株式会社 電子部品装置の製造方法、及び、電子部品装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000299333A (ja) * 1999-02-09 2000-10-24 Nitto Denko Corp 半導体装置の製法
JP2013060524A (ja) * 2011-09-13 2013-04-04 Hitachi Chemical Co Ltd フィルム状接着剤、接着シート、半導体装置及びその製造方法
JP2013219286A (ja) * 2012-04-11 2013-10-24 Hitachi Chemical Co Ltd 半導体封止用接着剤及びフィルム状半導体封止用接着剤
WO2014080717A1 (ja) * 2012-11-20 2014-05-30 日東電工株式会社 電子部品装置の製造方法、及び、電子部品装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019225761A1 (ja) * 2018-05-24 2019-11-28 大日本印刷株式会社 自発光型表示体用または直下型バックライト用の封止材シート、自発光型表示体、直下型バックライト
JPWO2019225761A1 (ja) * 2018-05-24 2020-07-09 大日本印刷株式会社 自発光型表示体用または直下型バックライト用の封止材シート、自発光型表示体、直下型バックライト
JP2020174048A (ja) * 2018-05-24 2020-10-22 大日本印刷株式会社 自発光型表示体用又は直下型バックライト用の封止材シート、自発光型表示体、直下型バックライト
CN113540327A (zh) * 2018-05-24 2021-10-22 大日本印刷株式会社 自发光型显示体用或直下型背光源用的密封材料片、自发光型显示体、直下型背光源
JP7156339B2 (ja) 2018-05-24 2022-10-19 大日本印刷株式会社 自発光型表示体用又は直下型バックライト用の封止材シート、自発光型表示体、直下型バックライト
JP2022183210A (ja) * 2018-05-24 2022-12-08 大日本印刷株式会社 自発光型表示体用又は直下型バックライト用の封止材シート、自発光型表示体、直下型バックライト
US11550186B2 (en) 2018-05-24 2023-01-10 Dai Nippon Printing Co., Ltd. Encapsulant sheet for self-luminous display or encapsulant sheet for direct backlight, self-luminous display, and direct backlight
JP2023016045A (ja) * 2018-05-24 2023-02-01 大日本印刷株式会社 自発光型表示体用又は直下型バックライト用の封止材シート、自発光型表示体、直下型バックライト
US11822185B2 (en) 2018-05-24 2023-11-21 Dai Nippon Printing Co., Ltd. Encapsulant sheet for self-luminous display or encapsulant sheet for direct backlight, self-luminous display, and direct backlight
US11829034B2 (en) 2018-05-24 2023-11-28 Dai Nippon Printing Co., Ltd. Encapsulant sheet for self-luminous display or encapsulant sheet for direct backlight, self-luminous display, and direct backlight
JP7435688B2 (ja) 2018-05-24 2024-02-21 大日本印刷株式会社 自発光型表示体用又は直下型バックライト用の封止材シート、自発光型表示体、直下型バックライト

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