WO2016109975A1 - Procédé de revêtement de substrats métalliques minces à l'aide de procédés de revêtement à combustion ou pulsés - Google Patents

Procédé de revêtement de substrats métalliques minces à l'aide de procédés de revêtement à combustion ou pulsés Download PDF

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Publication number
WO2016109975A1
WO2016109975A1 PCT/CN2015/070433 CN2015070433W WO2016109975A1 WO 2016109975 A1 WO2016109975 A1 WO 2016109975A1 CN 2015070433 W CN2015070433 W CN 2015070433W WO 2016109975 A1 WO2016109975 A1 WO 2016109975A1
Authority
WO
WIPO (PCT)
Prior art keywords
mask
backing plate
magnetic backing
coating process
contact
Prior art date
Application number
PCT/CN2015/070433
Other languages
English (en)
Inventor
Danny Cam Toan Lu
Xi Huang
Kiran KRISHNAPUR
Original Assignee
Applied Materials,Inc.
Danny Cam Toan Lu
Xi Huang
Kiran KRISHNAPUR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials,Inc., Danny Cam Toan Lu, Xi Huang, Kiran KRISHNAPUR filed Critical Applied Materials,Inc.
Priority to PCT/CN2015/070433 priority Critical patent/WO2016109975A1/fr
Priority to TW105100304A priority patent/TW201636118A/zh
Publication of WO2016109975A1 publication Critical patent/WO2016109975A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/126—Detonation spraying

Definitions

  • Embodiments of the present disclosure generally relate to methods of coating a workpiece. More specifically, embodiments described herein relate to methods for coating thin metal substrates with a pulsed or combustion coating process.
  • OLED Organic light emitting diodes
  • a typical OLED may include layers of organic material situated between two electrodes that are all deposited on a substrate in a manner to form a matrix display panel having individually energizable pixels.
  • the O LED is generally placed between two glass panels, and the edges of the glass panels are sealed to encapsulate the OLED therein.
  • Deposition processes utilized in the manufacture of OLED devices generally employ various masks to pattern the substrates.
  • the masks are generally suitable for patterning large area substrates and are often made of metallic materials.
  • the masks also need to be cleaned occasionally or the masks may be exposed to corrosive environments in chambers used to manufacture the OLED devices.
  • the c leaning processes and exposure to corrosive environments may reduce the effective lifetime of the masks which results in increased expense.
  • Coatings may be disposed on the masks to increase the lifetime of the mask.
  • certain types of coating processes may damage the masks.
  • grid portions of the masks are generally very thin and may be
  • the grid portions may be bent or broken as a result of the stresses exerted on the mask during the coating process.
  • a method of coating a mask includes positioning a mask having a surface area in contact with a surface of a non-magnetic backing plate and positioning one or more magnets adjacent a second surface of the non-magnetic backing plate opposite the first surface. A magnetically chucked surface area at the first surface is greater than the surface area of the mask. A coating process is performed and the one or more magnets adjacent the second surface are removed to dechuck the mask. The mask may then be removed from contact with the first surface of the non-magnetic backing plate.
  • a method of coating a mask includes positioning a mask having a surface area in contact with a first surface of a no n-magnetic backing plate and positioning one or more electromagnets adjacent a second surface of the non-magnetic backing plate opposite the first surface.
  • the one or more electromagnets may be electromagnetically activated and an electromagnetically chucked surface area at the first surface is greater than the surface area of the mask.
  • a coating process may be performed and the one or more electromagnets adjacent the second surface is deactivated to dechuck the mask. The m ask may then be removed from contact with the first surface of the non-magnetic backing plate.
  • a method of coating a mask includes positioning a ferromagnetic mask having a surface area on a first surface of a non-magnetic backing plate and positioning one or more permanent magnets adjacent a second surface of the non-magnetic backing plate opposite the first surface. A magnetically chucked surface area at the first surface is greater than the surface area of the ferromagnetic mask. A yttrium oxide detonation gun coating process may be performed and the one or more permanent magnets adjacent the second surface may be removed to dechuck the ferromagnetic mask. The ferromagnetic mask may then be removed from contact with the first surface of the non-magnetic backing plate.
  • Figure 1 illustrates a plan view of a mask.
  • Figure 2 illustrates a partial, schematic cross sectional view of a portion of the mask of Figure 1 disposed on a chucking apparatus according to one embodiment.
  • Figure 3 illustrates a partial, schematic cross sectional view of a portion of the mask disposed on a chucking apparatus according to another embodiment.
  • Figure 4 illustrates a partial, schematic cross sectional view of a portion of the mask disposed on a c hucking apparatus according to another embodiment.
  • Figure 5 schematically illustrates operations of a method for performing a coating process.
  • Embodiments described herein relate to methods for performing a coating process on a thin metal substrate.
  • a mask apparatus comprising one or more thin metal sheet may be placed on a backing plate and the mask is magnetically chucked to the backing plate.
  • the m agnetic chucking force is configured to prevent distortion of the mask during a coating process, such as a detonation gun coating process. After the coating process has been performed, the mask may be dechucked from the backing plate.
  • Figure 1 illustrates a plan view of a mask 100.
  • the mask 100 may be configured for use in OLED processing chambers, however, it is contemplated that the mask may be configured for use in other types of thin film deposition processes.
  • the mask 100 includes a body 102 which may be rectangular, or any other suitable shape. Grid portions 104 of the mask 100 extend from the body 102 and define openings 106 in the mask 100. The grid portions 104 may be arranged in any suitable pattern or design to facilitate patterned deposition on a substrate.
  • the mask 100 is formed from a ferromagnetic material, such as a nickel-iron alloy, for example Invar.
  • the mask 100 may have a surface area which may be defined by a combination of the body 102 and the grid portions 104 or the grid portions 104 alone.
  • Figure 2 illustrates a partial, schematic cross sectional view of a portion of the mask 100 of Figure 1 disposed on a chucking apparatus 200.
  • the chucking apparatus 200 includes a backing plate 202, one or more magnets 204, and an optional protective material layer 206.
  • the backing plate 202 has a first surface 201 and a second surface 203.
  • the grid portions 104 of the mask 100 may be placed in contact with the first surface 201.
  • the protective material layer 206 may be placed in contact with the first surface 201 and the grid portions 104 of the mask 100 may be placed in contact with the protective material layer 206.
  • the one or more magnets 204 may be disposed in contact with or adjacent to the second surface 203 of the backing plate 202 t o magnetically chuck the grid portions 104 to the backing plate 202.
  • S may be utilized to position the magnets 204 relative to the second surface 203.
  • a single magnet is disposed adjacent the second surface 203 such that a majority of the grid portion 104 can be magnetically coupled to the backing plate 202.
  • multiple magnets are disposed adjacent the second surface 203 such that a majority of the grid portion 104 can be magnetically coupled to the backing plate 202.
  • the magnetically chucked surface area generated by the presence of the magnets 204 relative to the backing plate 202 may be greater than the surface area of the grid portions 104 being chucked to the backing plate 202.
  • substantially all of the grid portions 104 may be coupled to the backing plate 202 by the magnetic force of the magnets 204.
  • the backing plate 202 may be formed from any suitable non-magnetic material which can be manufactured to have a flat surface. In one example, glass or granite materials may beutilized. In another example, non-magnetic steel or other metals may be utilized.
  • the backing plate 202 may be a solid body such that the first surface 201 is suitable for supporting either the grid portions 104 of the mask 100 or the protective material layer 206, depending upon the desired embodiment.
  • the magnets 204 are permanent magnets.
  • the magnets 204 may be placed, positioned, or otherwise affixed to or adjacent the second surface 203 to generate a magnetic chucking force near the first surface 201.
  • the protective material layer 206 may optionally be removably disposed on the first surface 201.
  • the protective material layer 206 is a polymeric material, such as a polyimide sheet. In operation, the protective material layer 206 may be positioned on the first surface 201 and may be held in place during a deposition process by the magnetic force exerted on the grid portions 104 generated by the magnets 204.
  • the protective material layer 206 may protect the first surface 201 from material deposits and increase efficiency when cleaning the chucking apparatus 200.
  • the grid portions 104 are disposed in contact with the first surface 201.
  • a thickness 208 of the grid portions 104 of the mask 100 may be between about 30 um and about 1 mm. While the illustrated embodiments are discussed with regard to grid portions of a mask, it is contemplated that any thin metal sheet or thin metal substrate may benefit from the embodiments described herein. More specifically, masks, grid portions of a m ask, and thin metal substrate may be coated according to the embodiments describe herein before or after assembly of the metal substrate into a final apparatus.
  • a coating process 210 may be performed to deposit a material on the mask 100.
  • the coating process may be a detonation gun or other similar deposition process. In certain embodiments, the coating process may be a pul sed deposition process or a continuous deposition process.
  • a ceramic material such as yttrium oxide, may be deposited on the mask 100. The ceramic material may have a thickness of between about 1 um and about 20 um, such as about 10 um.
  • a detonation gun process generally creates a pressure gradient above and below the substrate which is being processed due to a high velocity blast wave which carries the material to be deposited.
  • a high pressure region may exist above the substrate and a low pressure region may exist below the substrate.
  • the pressure differential above and below the substrate may cause the substrate (i.e. the grid portions 104) to become distorted which may damage the substrate or result in poor coating uniformity.
  • the low pressure region below the substrate may be reduced or eliminated by magnetic chucking to prevent distortion of the substrate during a detonation gun or other similar coating process. Accordingly, it is believed that the magnetic chucking may generate a flatness uniformity across the portions of the mask 100 being coated having a variation of less than about 200 um.
  • FIG. 3 illustrates a partial, schematic cross sectional view of a chucking apparatus 300 according to another embodiment.
  • one or more electromagnets 302 may be coupled to or disposed adjacent to the second surface 203 of the backing plate 202.
  • the el ectromagnets 302 may be coupled to a power source 304 configured to electromagnetically activate and deactivate the electromagnets 302.
  • FIG 4 illustrates a partial, schematic cross sectional view of a chucking apparatus 400 ac cording to another embodiment.
  • O ne or more magnets 404 may be permanent magnets or electromagnets, such as described with reference to the above embodiments.
  • a backing plate 402 may comprise a body having the first surface 201 and the second surface 203.
  • the grid portions 104 may be disposed in contact with the first surface 201 or the optional protective material layer 206 may be disposed between the first surface 201 and the grid portions 104.
  • the bac king plate 402 may also include one or more raised regions 406 which extend from the first surface 201.
  • the raised regions 406 may be positioned to extend from the first surface 201 between adjacent grid portions 104.
  • the raised regions 406 may extend above the grid regions 104 through the openings 106 (See Figure 1) .
  • the raised regions 406 may be any suitable shape configured to reduce or prevent distortion of the grid portions 104 during the deposition process 210. It is believed that the shape and position of the raised regions 406 may influence the pressure gradient near sidewalls 408 of the grid portions adjacent the first surface 201 (or the optional protective material layer 206) and reduce or prevent the generation of a pressure gradient below the grid portions 104 which may result in distortion of the grid portions 104. For example, the raised regions 406 may direct fluids and deposition materials away from the sidewalls 408 to reduce or prevent the probability of generating a low pressure region below the grid portions 104. Accordingly, the range of velocities of the blast wave generated during a detonation gun coating process may be increased which may result in greater flexibility and improved process results when coating the mask 100.
  • Figure 5 chematically illustrates operations of a method 500 f or performing a coating process.
  • a mask may be positioned on a backing plate.
  • the backing plate may be part of a larger magnetic chucking apparatus configured to chuck the mask during a deposition process.
  • the mask may be positioned on a first surface of the backing plate.
  • magnets may be positioned or activated to chuck the mask to the backing plate.
  • permanent magnets may be positioned adjacent to a second surface of the backing plate oriented opposite the first surface to generate a magnetic force at the first surface.
  • electromagnets positioned adjacent the second surface may be electromagnetically activated to generate a magnetic force at the first surface.
  • a coating process may be performed.
  • the coating process may be any suitable deposition process, such as a det onation gun coating process.
  • yttrium oxide is deposited on the mask via the detonation gun coating process.
  • the magnets may be removed or deactivated to dechuck the mask from the backing plate.
  • the magnets may be removed from a position adjacent the second surface of the backing plate such that little or no magnetic force is generated at the first surface of the backing plate.
  • the power supplied to the electromagnets may be terminated such that little or no magnetic force is generated at the first surface.
  • the mask may be removed from the backing plate.
  • mask apparatus having thin grid portions may be more efficiently and effectively coated by detonation gun processes.
  • detonation gun processes may be utilized with improved deposition characteristics and reduced probabilities of mask damage.

Abstract

L'invention concerne un procédé permettant de mettre en oeuvre un processus de revêtement sur un substrat métallique mince. Un appareil de masque comprenant une ou plusieurs feuilles métalliques minces peut être placé sur une plaque de support et le masque peut être magnétiquement monté en mandrin sur la plaque de support. La force du montage en mandrin magnétique peut être configurée pour empêcher la distorsion du masque lors d'un processus de revêtement, comme un procédé de revêtement au pistolet à détonation. Une fois le processus de revêtement effectué, le masque peut être démonté de la plaque de support.
PCT/CN2015/070433 2015-01-09 2015-01-09 Procédé de revêtement de substrats métalliques minces à l'aide de procédés de revêtement à combustion ou pulsés WO2016109975A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/CN2015/070433 WO2016109975A1 (fr) 2015-01-09 2015-01-09 Procédé de revêtement de substrats métalliques minces à l'aide de procédés de revêtement à combustion ou pulsés
TW105100304A TW201636118A (zh) 2015-01-09 2016-01-06 利用脈衝式或燃燒塗布製程塗布薄金屬基材之方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2015/070433 WO2016109975A1 (fr) 2015-01-09 2015-01-09 Procédé de revêtement de substrats métalliques minces à l'aide de procédés de revêtement à combustion ou pulsés

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Publication Number Publication Date
WO2016109975A1 true WO2016109975A1 (fr) 2016-07-14

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE29707686U1 (de) * 1997-04-28 1997-06-26 Balzers Prozess Systeme Vertri Magnethalterung für Folienmasken
US20060191864A1 (en) * 2005-02-25 2006-08-31 Seiko Epson Corporation Mask, mask manufacturing method, pattern forming apparatus, and pattern formation method
CN1854909A (zh) * 2005-04-20 2006-11-01 应用菲林股份有限两合公司 用于定位掩模的方法和装置
CN1861833A (zh) * 2005-04-20 2006-11-15 应用菲林股份有限两合公司 磁掩模保持器
DE102008037387A1 (de) * 2008-09-24 2010-03-25 Aixtron Ag Verfahren sowie Vorrichtung zum Abscheiden lateral strukturierter Schichten mittels einer magnetisch auf einem Substrathalter gehaltenen Schattenmaske
US20100080891A1 (en) * 2008-09-30 2010-04-01 Canon Anelva Corporation Holding mechanism, processing apparatus including holding mechanism, deposition method using processing apparatus, and method of manufacturing image display device
US20130174780A1 (en) * 2012-01-09 2013-07-11 Suk-Beom You Deposition mask and deposition device using the same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE29707686U1 (de) * 1997-04-28 1997-06-26 Balzers Prozess Systeme Vertri Magnethalterung für Folienmasken
US20060191864A1 (en) * 2005-02-25 2006-08-31 Seiko Epson Corporation Mask, mask manufacturing method, pattern forming apparatus, and pattern formation method
CN1854909A (zh) * 2005-04-20 2006-11-01 应用菲林股份有限两合公司 用于定位掩模的方法和装置
CN1861833A (zh) * 2005-04-20 2006-11-15 应用菲林股份有限两合公司 磁掩模保持器
DE102008037387A1 (de) * 2008-09-24 2010-03-25 Aixtron Ag Verfahren sowie Vorrichtung zum Abscheiden lateral strukturierter Schichten mittels einer magnetisch auf einem Substrathalter gehaltenen Schattenmaske
US20100080891A1 (en) * 2008-09-30 2010-04-01 Canon Anelva Corporation Holding mechanism, processing apparatus including holding mechanism, deposition method using processing apparatus, and method of manufacturing image display device
US20130174780A1 (en) * 2012-01-09 2013-07-11 Suk-Beom You Deposition mask and deposition device using the same

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