WO2016102584A1 - Composant optoélectronique et procédé de fabrication d'un composant optoélectronique - Google Patents

Composant optoélectronique et procédé de fabrication d'un composant optoélectronique Download PDF

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Publication number
WO2016102584A1
WO2016102584A1 PCT/EP2015/081005 EP2015081005W WO2016102584A1 WO 2016102584 A1 WO2016102584 A1 WO 2016102584A1 EP 2015081005 W EP2015081005 W EP 2015081005W WO 2016102584 A1 WO2016102584 A1 WO 2016102584A1
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WIPO (PCT)
Prior art keywords
layer
transparent
optoelectronic assembly
physical contact
electrode layer
Prior art date
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PCT/EP2015/081005
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German (de)
English (en)
Inventor
Michael Popp
Johannes Rosenberger
Original Assignee
Osram Oled Gmbh
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Filing date
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Application filed by Osram Oled Gmbh filed Critical Osram Oled Gmbh
Publication of WO2016102584A1 publication Critical patent/WO2016102584A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes

Definitions

  • the invention relates to an optoelectronic assembly and a method for producing an optoelectronic
  • a conventional organic optoelectronic assembly for example an OLED, has on a support an anode, an organically functional layer system on the anode and a cathode on the organic functional layer system.
  • the organically functional layer system has one or more emitter layer (s) with one
  • Optoelectronic assembly may be arranged in the so-called bottom-emitter structure, in which the cathode is formed of a highly reflective material and the light is emitted through a transparent anode and a transparent support.
  • Optoelectronic assembly be set up in the so-called top emitter construction, in which the anode is formed of a highly reflective material and the light is emitted through the transparent cathode.
  • the maximum reflectivity of such an electrode is at most 95%.
  • a thin film encapsulation layer which prevents the ingress of water and / or oxygen into the organic Optoelectronic assembly is set up and formed on the highly reflective cathode, on the cathode has a low adhesion and tends to delamination.
  • the thin film encapsulation layer has high adhesion to the cathode, so that the
  • Thin-film encapsulation layer delaminated by tensions together with the cathode.
  • the object of the invention is to provide a surface light source with an increased efficiency, for example, without causing delamination.
  • an optoelectronic assembly having a transparent electrode layer on a mirror structure.
  • Mirror structure is arranged in physical contact on a support.
  • the mirror structure has at least a first layer and a second layer.
  • the first layer is arranged in physical contact on the second layer.
  • the second layer comprises a metal or a metal alloy.
  • the first layer is electrically non-conductive and transparent to a light.
  • the electrode layer is a transparent to the light electrode layer.
  • the transparent electrode layer is arranged in physical contact on the first layer.
  • the mirror structure is to one
  • Reflecting is formed by at least a portion of the light, which is transmitted through the transparent electrode layer to the mirror structure.
  • Structures that are in physical contact with each other have a common interface.
  • the optoelectronic assembly may be formed in the so-called top emitter design, in which light is not emitted by the carrier, but the carrier
  • mirroring effect and power line of a conventional lower electrode of an optoelectronic assemblies in a mirror structure and a transparent electrode allows a highly reflective assembly side with a reflectivity for visible light, which is greater than the reflectivity of silver, for example, greater than 95%.
  • reflecting assembly side can be achieved in the entire visible range of the light spectrum. This allows independent optimization of reflectivity and
  • Power line characteristic for example, for large-scale, optoelectronic module structures.
  • the functional separation allows a reflective
  • the carrier is also editable analogously to conventional methods.
  • the mirror structure is also against environmental influences
  • the mirror structure can be formed as a barrier structure, for example, for an organic
  • Electrode layer with respect to a diffusion of a harmful substance in the organic functional layer structure from the side of the wearer In a conventional
  • the barrier effect of the mirror structure can be independent of the electrical Properties and the encapsulation properties of the
  • the barrier effect of the mirror structure can be determined, for example, by means of the number of layers, the thickness of the (partial) layers and the processes used to form the layer
  • the first layer is a stack of layers, i. a layer stack, however, is synonymously referred to as the first layer.
  • the first layer is a
  • Bragg mirror formed for at least a portion of visible light. This allows erasing at least one color region of the light. For example, by means of a Bragg mirror, off-states of color regions of the light can be set, the off-states being the
  • the first layer has at least a first partial layer and a second partial layer.
  • the first sub-layer is arranged in physical contact with the second sub-layer on the second sub-layer.
  • the first sub-layer is in physical contact with the transparent electrode layer. This allows to optimize the
  • the first layer has a
  • Layer sequence of the first part-layer and the second part-layer In the layer sequence, two or more stacks of the first partial layer and the second partial layer are stacked on top of each other. This allows deletion of at least one Color range of the light and / or optimizing the
  • the first layer has at least the first partial layer, the second partial layer and a third partial layer.
  • the second sub-layer is arranged in physical contact on the third sub-layer.
  • the first layer is formed as a single layer. This easily enables a functional separation of reflective effect at the common interface of first layer and second layer and the power line in the transparent
  • the common boundary surface of the first layer and the second layer is set up in the
  • the mirror structure has an optically functional structuring in the common interface of the first layer with the second layer.
  • the optically functional structuring is, for example, a microlens field, a scattering structure or an optical one
  • the second layer is in
  • the optoelectronic assembly is designed as a surface light source.
  • Optoelectronic assembly is for example as a
  • the optoelectronic assembly is an organic optoelectronic assembly.
  • the optoelectronic assembly further has a further transparent to the light electrode layer, which in physical and electrical contact on the
  • organically functional layered structure is arranged.
  • the transparent electrode layer, the organic functional layer structure, and the other transparent electrode layer are stacked over the mirror structure.
  • the object is achieved according to a further aspect of the invention by a method for producing a
  • Electrode layer is formed on a mirror structure.
  • the method comprises forming a mirror structure in physical contact on a support.
  • Mirror structure is formed with at least a first layer and a second layer.
  • the first layer is in formed physical contact on the second layer.
  • the second layer comprises or is formed from a metal or metal alloy.
  • the first layer is electrically non-conductive and transparent to a light or is formed.
  • the formation of the electrode layer is a formation of a transparent to the light
  • the transparent electrode layer is formed in physical contact on the first layer.
  • the mirror structure is formed to reflect at least a portion of the light transmitted through the transparent electrode layer to the mirror structure.
  • Power line allows fabrication of the mirror structure prior to forming sensitive structures on the
  • Electrode layer not necessary.
  • the optoelectronic assembly formed as a surface light source.
  • the optoelectronic assembly is formed, for example, as a general lighting or a display.
  • the method further comprises forming an organic functional layer structure.
  • the organically functional layer structure is formed in physical and electrical contact with the transparent electrode layer.
  • the method comprises forming a further, transparent to the light electrode layer.
  • the other, transparent electrode layer is formed in physical and electrical contact arranged on the organically functional layer structure.
  • FIG. 1 is a sectional view of a
  • Figures 2A and 2B are sectional views of a
  • Figure 3 is a sectional view of a
  • Figure 4 is a sectional view of a
  • Figure 5 is a sectional view of a
  • Figure 6 is a diagram of the reflectivity of optoelectronic assemblies of an embodiment
  • Figure 7 is a sectional view of a
  • FIG. 8 is a flowchart of a
  • An optoelectronic assembly may have one, two or more optoelectronic assemblies.
  • a Optoelectronic assembly also one, two or more
  • Component may have, for example, an active and / or a passive assembly.
  • a passive electronic assembly may for example have a computing, control and / or 'control unit and / or a transistor.
  • a passive electronic assembly may include, for example, a capacitor, a resistor, a diode or a coil.
  • An optoelectronic assembly may be or may comprise an electromagnetic radiation emitting assembly or an electromagnetic radiation absorbing assembly.
  • An electromagnetic radiation absorbing assembly may be, for example, a solar cell or a photodetector.
  • Be semiconductor device and / or as a
  • electromagnetic radiation emitting diode as a diode emitting organic electromagnetic radiation, as a transistor emitting electromagnetic radiation or as organic electromagnetic radiation
  • the radiation which is also referred to as light, may for example be light in the visible range, UV light and / or infrared light.
  • the electromagnetic radiation emitting assembly for example, as a light emitting diode (light emitting diode, LED) as organic
  • OLED light emitting diode
  • Then be formed light-emitting transistor.
  • light emitting assembly can be in different
  • Embodiments be part of an integrated circuit. Furthermore, a plurality of light-emitting
  • Assemblies may be provided, for example housed in a common housing.
  • the term "translucent” or “ translucent layer” can be understood in various embodiments that a layer is permeable to light
  • the light generated by the light emitting device for example one or more
  • Wavelength ranges for example, for light in one
  • Wavelength range of the visible light for example, at least in a partial region of the wavelength range of 380 nm to 780 nm.
  • the term "translucent layer” in various embodiments is to be understood to mean that substantially all of them are in one
  • Quantity of light is also coupled out of the structure (for example, layer), wherein a portion of the light can be scattered in this case
  • transparent * or transparent layer * can be understood in various embodiments that a layer is transparent to light
  • Wavelength range from 380 nm to 780 nm), wherein light coupled into a structure (for example a layer) is also coupled out of the structure (for example layer) substantially without scattering or light conversion,
  • FIO.l shows a sectional view of a
  • Embodiment of an optoelectronic assembly Embodiment of an optoelectronic assembly.
  • the optoelectronic assembly 100 has a mirror structure 104 on a carrier 102.
  • the mirror structure 104 has a first layer 116 and a second layer 114.
  • the second layer 114 is disposed on or above the carrier 102.
  • the first layer 116 is disposed on the second layer 114.
  • the second layer 114 is in one
  • the first layer 116 is electrically nonconductive and transparent to a light 124.
  • the first layer 116 is thus an electrical one
  • the second layer 114 comprises or is formed from a metal or a metal alloy.
  • a transparent to a light 124 electrode layer 106 is formed.
  • transparent electrode layer 106 may also be the first
  • Electrode layer are called.
  • the first layer 116 is in physical contact with the first one
  • Electrode layer 106 is arranged.
  • Scattering of the light 124 i. the reflectivity in the optoelectronic assembly 100 on the side of the carrier 102, regardless of the electrical properties of the first electrode layer 116 can be adjusted. This allows greater freedom of design in the design of the optoelectronic assembly 100.
  • the optoelectronic assembly 100 has an organically functional layer structure 108; another, transparent to the light
  • the further transparent electrode layer 110 may also be referred to as the second electrode layer.
  • the organic functional layer structure 106 is electrically conductive and electrically conductively coupled to the first Electrode layer 106 and the second electrode layer 110 is formed.
  • the first electrode layer 106, the organic functional layer structure 108 and the second electrode layer 110 form an electrically active region 118 of FIG.
  • Region 118 is configured to emit electromagnetic radiation from a provided electrical energy. Alternatively or additionally, the electrically active region 118 is for generating an electrical
  • the optoelectronic assembly 100 may as a
  • the optoelectronic assembly is formed, for example, to emit a light 126, wherein the light is generated in the organically functional layer structure 108.
  • a first portion 120 of the emitted light 126 is directly emanatable through the second electrode layer 110 and the encapsulation structure 112.
  • a second portion 124 of the emitted light 126 is indirectly or indirectly emanated by the second electrode layer 110 and the encapsulation structure 112, by the second part 124 first of the organically functional
  • Layer structure 108 is emitted in the direction of the carrier 102 and at the common interface 122 of the first
  • Encapsulation structure 112 deflected, scattered or
  • the carrier 102 is formed as a foil or a metal sheet. Alternatively or in addition the carrier 102 comprises or is formed from a glass or plastic.
  • the carrier 102 may be electrically conductive, for example as a metal foil or a glass or plastic carrier having a conductor structure.
  • the carrier 102 comprises glass, quartz, a ceramic and / or a
  • the carrier 102 comprises or is formed from a plastic film or a laminate with one or more plastic films.
  • the carrier 102 may be transparent with respect to that of the
  • Optoelectronic assembly 100 absorbed and / or emitted light 124th
  • the carrier 102 is configured as a foil or a metal sheet. Alternatively or additionally, the carrier 102 has at least one mechanically rigid, non-flexible region.
  • the carrier 102 is intransparent in at least one wavelength range of the visible light. In various developments, the carrier 102 is intransparent to visible light.
  • the mirror structure 104 is designed to reflect electromagnetic radiation 124.
  • the mirror structure 104 in various developments on optically functional layers or structures, for example in the common
  • the mirror structure 104 may, for example, for beam shaping of the emitted light 126 or for generating an angle-dependent off-state of the emitted light 126.
  • the mirror structure 104 may, for example
  • the mirror structure 104 can, for example, as the first layer 116, a dielectric layer or a dielectric
  • the mirror structure 104 as a barrier to chemical contaminants or
  • the mirror structure 104 is designed in such a way that it can not be penetrated by OLED-damaging substances such as water, oxygen or solvents, or at most only very small amounts.
  • the mirror structure 104 is formed substantially on the entire surface of one side of the carrier 102.
  • the optoelectronic assembly 100 has an optically active region and an optically inactive region with respect to a main emission direction of the emitted light 126 on the carrier 102.
  • the mirror structure 104 is in the optically active region
  • the optically inactive region is free of mirror structure 104.
  • the first layer 116 is completely or partially permeable to electromagnetic radiation of a first
  • Wavelength range of the light 124 Wavelength range of the light 124.
  • the first layer 116 is complete or
  • partially reflective designed for electromagnetic radiation of a second wavelength range of the light 124, for example as a partially transparent mirror structure 104, for example as a dichroic mirror.
  • Semitransparent first layer 116 is, for example, a splitter mirror and / or a disposable mirror.
  • the first layer 116 may include a first portion of it reflect incident electromagnetic radiation 124. A second part of the incident electromagnetic
  • Radiation 124 passes through the partially transmissive first layer 116 and is reflected at the common interface 122.
  • the first layer 116 or the individual sub-layers of the first layer 116, as described in more detail in the following figures, may be made according to various embodiments
  • the first layer 116 (or the individual partial layers of the first layer 116) may be made of a translucent or transparent material (or a
  • the first layer 116 or the individual partial layers of the first layer 116 are formed according to various development as an electrically non-conductive layer / s.
  • the first layer 116 (or the individual sub-layers of the first layer 116) is / are formed of a dielectric material (or combination of materials that is electrically nonconductive).
  • the first layer 116 may be formed as a single layer (in other words, as a single layer), for example illustrated in FIG. In other words, in various developments, the first layer 116 is formed as a single layer.
  • the first layer 116 may have a plurality of partial layers formed on one another. In other words: in different
  • the first layer 116 is formed as a stack of layers (stack), as illustrated in more detail in FIG. 3 to FIG. 6, for example.
  • the first layer 116 is a Bragg mirror for at least a portion of
  • first layer 116 As a
  • Dichroic mirror for at least part of
  • the first layer 116 or at least one sub-layer of the first layer can according to a development of a
  • Layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm for example, a layer thickness of about 10 nm to about 100 nm according to a development, for example, about 40 nm according to a development.
  • all partial layers can have the same layer thickness.
  • Partial layers of the first layer 116 different
  • Partial layers one or more of the partial layers of the first layer 116 comprise or be formed from one of the following materials: aluminum oxide, zinc oxide,
  • Silicon oxynitride indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, and mixtures and alloys
  • the first layer 116 or (in the case of a layer stack having a plurality of sub-layers) one or more of the sub-layers of the first layer 116, one or more high refractive index materials, in other words, one or more high refractive index materials, for example having a refractive index of at least 2.
  • the second layer 114 is formed in physical contact on the carrier 102.
  • the carrier 102 and the second layer 114 differ in at least one
  • Property for example, the materials from which they are formed.
  • the common interface 122 may be in different
  • Interface 122 of first layer 116 and second layer 114 is configured to reflect substantially all of the light 124 that is transmitted through the first layer 116 to the second layer 114.
  • the mirror structure 104 has an optically functional structuring in the interface 122 of the first layer 116 with the second layer 114, for example a microlens field, a scattering structure or an optical grating. In various developments is the first
  • Electrode layer 106 is formed transparent to the emitted and / or absorbed by the organic functional layer structure 108 light 124. In various developments, the first
  • Electrode layer 106 is a transparent electrically
  • the first electrode layer 106 comprises or is formed from an electrically conductive polymer or an electrically conductive polymer mixture.
  • Electrode layer 106 made of a metal or a
  • Metal alloy formed and has a layer thickness to less than about 100 nm.
  • the first electrode layer 106 has an electrical
  • conductive material such as a metal
  • the first electrode layer 106 comprises a transparent conductive oxide of one of the following materials: for example metal oxides: for example zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO).
  • the first electrode layer has a layer thickness in the range from a monolayer to 500 nm, for example from less than 25 nm to 250 nm,
  • the organic functional layer structure 108 is for emitting a light from one provided
  • the organic functional layer structure 108 is configured to generate an electrical energy from an absorbed light.
  • Layer structure 108 has a hole injection layer, a hole transport layer, an emitter layer, a
  • the layers of the organic functional layer structure 108 are arranged between the electrode layers 106, 110 such that in operation electrical charge carriers from the first
  • Electrode layer 110 can flow, and vice versa.
  • the second electrode layer 110 is transparent with respect to the light 126 emitted and / or absorbed by the organic functional layer structure 108.
  • the first electrode layer 106 and the second electrode 106 are identical to each other.
  • Electrode layer 110 may be the same or different.
  • the second electrode layer 110 is an anode, ie a hole-injecting electrode layer
  • the electrically active region 118 is hermetically sealed by means of the encapsulation structure 112 with respect to an inward diffusion of at least one substance which is harmful to the electrically active region 118, for example water, sulfur, oxygen and / or their compound.
  • a hermetically water and / or oxygen-tight encapsulation structure 112 is one in the
  • a hermetically sealed structure may have a diffusion rate with respect to water and / or oxygen of less than about 10 g / (md), a hermetically sealed cover, and / or a hermetically sealed support 102 may include a diffusion rate with respect to water and / or oxygen smaller than about 10 -4 g / (m 2 d), for example, in a range of about 10 -4 g / (m 2 d) to about 10 -10 g / (m 2 d), for example, in a range of about 10 -4 g / (m 2 d) to about 10 -6 g / (m 2 d).
  • FIGS. 2A and 2B are sectional views of FIG.
  • Example embodiments 200, 210 of a part of a Optoelectronic assembly for example, largely the embodiment shown in Figure 1 a
  • Optoelectronic module 100 may correspond.
  • the first layer 116 may be formed as a single layer (in other words, as a single layer), for example illustrated in FIG. 2A and FIG. 2B. In other words: in different
  • the first layer 116 is formed as a single layer.
  • the mirror structure 104 and / or the electrically active region 118 has a multiplicity of electrical through contacts 202, 206, for example illustrated in FIG. 2A and FIG. 2B.
  • the vias 202, 204 comprise an electrically conductive material.
  • Vias 202, 204 may be formed by a conventional patterning and / or coating process.
  • the vias 202, 204 may electrically connect one or both electrode layers 106, 110 to the carrier 102 and / or the second layer 114. As a result, for example, a contacting of the first
  • Electrode layer 106 and / or the second electrode layer 110 carried by the carrier 102, which simplifies the contacting of the optoelectronic assembly 100.
  • the first electrode layer 106 is electrically connected to the second layer 114 by means of a multiplicity of vias 202, for example illustrated in FIG.
  • the second electrode layer is electrically connected to the second layer 114 by means of a plurality of through contacts 204, for example as illustrated in FIG.
  • the plurality of vias 202, 204 or a part of the plurality of vias 202, 204 may mean one electrically non-conductive structure 206 of an electrically conductive structure or layer to be electrically insulated when an electrical connection with this layer or structure is not predetermined.
  • the electrically non-conductive structure 206 may be a resist, for example,
  • first layer 116 of electrically non-conductive material for example, a polyiraid.
  • an electrically non-conductive structure 206 in the first layer 116 is not necessary.
  • the second layer 114 has a layer thickness in a range of about 100 nm to 1 ⁇ m, and is formed of silver.
  • the first layer 116 has a layer thickness in a range of about 20 nm to 1 ⁇ m, for example, in a range of about 50 nm to 1 ⁇ m, and is formed of ⁇ 10 x , ⁇ iO x , ZrO x , or a similar material, for example, one
  • Execution example 300 of an optoelectronic assembly for example, largely the one shown above
  • Embodiments of an optoelectronic assembly can correspond.
  • the first layer 116 has at least one first partial layer 302 and a second one
  • Partial layer 304 for example, illustrated in FIG.
  • the first sub-layer 302 is disposed in physical contact with the second sub-layer 304 on the second sub-layer 304.
  • the first sub-layer 302 is in physical contact with the electrode layer 106.
  • At least one of the following materials is or is / is formed from: a polymer, a metal oxide, a metal nitride, a metal carbide or a metal oxynitride.
  • the second layer 114 has a layer thickness in a range of about 100 nm to 1 ⁇ m, and is formed of silver.
  • the first layer 116 has a first sub-layer 302 and a second sub-layer 304.
  • the first sub-layer 302 is formed with a layer thickness in a range of about 50 nm to 1 ⁇ m and ⁇ .
  • the second sub-layer 304 is provided with a
  • Layer thickness in a range of about 20 nm to 1 ⁇ m formed from TiO x , ZrO x or a similar material,
  • a transparent non-conductive oxide for example, a transparent non-conductive oxide. 4 shows a sectional view of a transparent non-conductive oxide.
  • Embodiment Example 400 of a part of an optoelectronic assembly for example, largely one of the above examples of an optoelectronic
  • the first layer 116 has a layer sequence of first partial layer 402 and second partial layer 404, for example illustrated in FIG.
  • the layer sequence two or more stacks (stacks 1 to n, with n of a natural number) of first sub-layer 402 and second sub-layer 404 are stacked one above the other; see also FIG.6.
  • the partial layers of the first layer 116 may be according to one of the described
  • Formations of the first layer 116 may be formed.
  • the second layer 114 has a layer thickness in a range of about 100 nm to 1 ⁇ m, and is formed of silver.
  • the first layer 116 has a stack of layers with n stacks each
  • the first sub-layer 402 is formed with a layer thickness in a range of about 50 nm to 1 ⁇ m and ⁇ .
  • the second sub-layer 404 is formed with a layer thickness in a range of about 20 nm to 1 ⁇ m of TiOx, ZrOx or a similar material,
  • a transparent non-conductive oxide for example, a transparent non-conductive oxide.
  • Embodiment 500 of a part of an optoelectronic assembly for example, largely one of the above examples of an optoelectronic
  • the first layer 116 has at least one third sub-layer 506 in addition to the first sub-layer 502 and the second sub-layer 504, wherein the second sub-layer 504 is arranged in physical contact on the third sub-layer 506, for example illustrated in FIG.
  • the third sub-layer 506 is formed equal to the first sub-layer 502.
  • the third sub-layer 506 is formed at least in a property different from the first sub-layer 502, for example with regard to the material and / or the thickness of the sub-layers.
  • the first layer 116 has a stack with a first one Partial layer 302 and a second sub-layer 304 (see also FIG.3).
  • Partial layer 404 wherein the stacks are stacked on top of each other (see also FIG.4).
  • Partial layer 404 wherein the stacks are stacked.
  • the first sub-layer 302, 402 has a layer thickness of approximately 66 nm in the developments 606, 608, 610, 612 and is formed from TiO 2.
  • the second sub-layer 304, 404 has in the developments 606, 608, 610, 612 a
  • the second layer 114 has a layer thickness of approximately 200 nm in the developments 606, 608, 610, 612 and is formed from Ag.
  • the mirror structure 104 has a mean reflectivity: in the first embodiment 606 of approximately 97.70%; at the second
  • Silver has an average reflectivity of about 95%. It can thus be seen from the diagram 600 that the mirror layer 104 with the first layer 116 increases the reflectivity of a simple silver layer, as is conventionally also used as a reflective electrode. 7 shows a sectional view of a
  • Embodiment of an optoelectronic assembly 700 for example, largely one of the above
  • Embodiments of an optoelectronic assembly can correspond.
  • the encapsulation structure 112 has different
  • barrier thin film 716 Further developments a barrier thin film 716, a
  • Decoupling layer for example, a bonding layer 718, a getter and / or a cover 720; for example
  • the encapsulation structure 112 surrounds the electrically active region 118 at least
  • the barrier film 716 comprises or is formed from one of the following materials: alumina,
  • Silicon oxynitride indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and alloys thereof.
  • the input / outcoupling layer has a matrix and therein
  • the average refractive index of the input / outcoupling layer is greater or less than the average refractive index of the layer from which the electromagnetic radiation is provided.
  • one or more antireflection coatings may be provided in the organic optoelectronic assembly.
  • the bonding layer 718 is formed of an adhesive or a varnish. In a further development, a
  • Connecting layer 718 made of a transparent material
  • the connecting layer 718 acts as a scattering layer, resulting in a
  • Electrode layer 110 and the connection layer 718 still an electrically insulating layer (not shown) formed, for example, SiN, for example, with a layer thickness in a range of about 300 nm to
  • the layer of getter comprises or is formed from a material that absorbs and binds substances that are detrimental to the electrically active region, such as water vapor and / or oxygen.
  • the layer with getter has one
  • the cover 720 is formed or arranged.
  • the cover 720 is connected to the electrically active region 118 by means of the connection layer 718 and protects it from harmful substances.
  • the cover 720 is, for example, a
  • the glass cover is, for example, connected by means of a frit bonding (glass frit bonding / glass soldering / seal glass bonding) by means of a conventional glass solder in the geometric edge regions of the organic optoelectronic component.
  • contact surfaces 724, 728 by means of which the optoelectronic assembly 700 can be connected to an assembly-external electrical energy source (not illustrated).
  • the contact surfaces 724, 728 are outside the encapsulation structure 112
  • the electrically conductive connection layers 722, 726 for example, transparent or non-transparent.
  • the electrically conductive connection layers 722, 726 have, for example, a layer sequence, for example: Mo / Al / Mo; Cr / Al / Cr or Ag / Mg; or are formed of a single layer, for example AI.
  • the contact surfaces 724, 728 may be configured according to a conventional embodiment,
  • ACF-PCB film or have.
  • Electrode layer 106 is connected, is a first
  • the first electric potential can be applied.
  • the first electric potential can be applied.
  • assembly-external electrical energy source such as a
  • the first electrical potential is applied to an electrically conductive carrier 102 and the first electrode layer 106 through the carrier 102, the mirror structure 104 and the
  • the first electrical potential is, for example, the ground potential or another predetermined reference potential.
  • Electrode layer 110 is connected, is a second
  • the second electrical potential can be applied.
  • the second electrical potential can be applied.
  • the second electrical potential is different from the first electrical potential.
  • the second electrical potential points
  • a value such that the difference from the first electric potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15V, for example, one Value in a range of about 3 V to about 12 V.
  • the insulating structure 714 has, for example, a resist or is formed therefrom, for example a
  • Polyimide. PIO.8 shows a flowchart of an exemplary embodiment of a method 800 for producing an optoelectronic assembly, which, for example, can largely correspond to one of the exemplary embodiments shown above.
  • the method 800 for producing an optoelectronic assembly comprises forming 802 a mirror structure in physical contact on a carrier 102.
  • Mirror structure is formed with at least a first layer and a second layer.
  • the first layer 116 is in physical contact on the second layer 114
  • the second layer 114 comprises a metal or a metal alloy.
  • the first layer 116 is
  • the formation of the mirror structure takes place in a prefabrication, for example
  • Vacuum for example, in an integrated process before forming the electrically active region of the
  • the method also includes forming 804 a transparent to the light electrode layer.
  • the transparent electrode layer is formed in physical contact on the first layer 116.
  • the mirror structure is formed to reflect at least a portion of the light passing through the first electrode layer to the first electrode layer
  • the optoelectronic assembly is formed as a surface light source.
  • the optoelectronic assembly is formed, for example, as a general lighting or a display.
  • the method further comprises forming an organic functional layer structure.
  • the organically functional layer structure is formed in physical and electrical contact with the transparent electrode layer.
  • the method comprises forming a further, transparent to the light electrode layer.
  • transparent electrode layer is in the physical and electrical contact on the organically functional
  • Layer 116 or one or more sub-layers of the first layer 116 may be formed by means of a suitable deposition method, e.g. by means of a
  • ALD Atomic layer deposition
  • PEALD plasma enhanced atomic layer deposition
  • PECVD plasma-enhanced plasma vapor deposition
  • PECVD plasma-less plasma-enhanced vapor deposition
  • PLCVD Chemical Vapor Deposition
  • all partial layers can be formed by means of an atomic layer deposition method.
  • a first layer 116 which has a plurality of partial layers, one or more
  • Partial layers of the first layer 116 are deposited by means of a different deposition method than an atomic layer deposition method, for example by means of a
  • the optoelectronic assembly may be formed as a solar cell or a photodetector.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Différents modes de réalisation concernent un composant optoélectronique (100). Ledit composant optoélectronique (100) comprend : une structure miroitante (104) disposée en contact physique sur un support (102), la structure miroitante (104) comprenant au moins une première couche (116) et une deuxième couche (114), la première couche (116) étant disposée en contact physique sur la deuxième couche (114) tandis que la deuxième couche (114) comprend un métal ou un alliage de métaux et la première couche (116) n'est pas électroconductrice mais est transparente à une lumière ; et une couche d'électrode transparente à la lumière (106). La couche d'électrode transparente (106) est disposée en contact physique sur la première couche (116) et la structure miroitante (104) est formée pour réfléchir au moins une partie (124) de la lumière qui est transmise à la structure miroitante (104) à travers la couche d'électrode transparente (106).
PCT/EP2015/081005 2014-12-23 2015-12-22 Composant optoélectronique et procédé de fabrication d'un composant optoélectronique WO2016102584A1 (fr)

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DE102014119538.8A DE102014119538A1 (de) 2014-12-23 2014-12-23 Optoelektronische Baugruppe und Verfahren zum Herstellen einer optoelektronischen Baugruppe

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DE102016102939A1 (de) * 2016-02-19 2017-08-24 Osram Oled Gmbh Lichtemittierendes Bauelement und Verfahren zum Herstellen eines lichtemittierenden Bauelements
DE102017117619A1 (de) * 2017-08-03 2019-02-07 Osram Oled Gmbh Organisches, optoelektronisches bauelement und verfahren zum herstellen eines organischen, optoelektronischen bauelements

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JP2007059116A (ja) * 2005-08-23 2007-03-08 Sony Corp 表示装置
DE102008020816A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Organische Leuchtdiode, Kontaktanordnung und Verfahren zur Herstellung einer organischen Leuchtdiode
US20110215362A1 (en) * 2010-03-02 2011-09-08 Kabushiki Kaisha Toshiba Illumination device and method for manufacturing same
DE102012221191A1 (de) * 2012-11-20 2014-05-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
WO2014087482A1 (fr) * 2012-12-04 2014-06-12 パイオニア株式会社 Dispositif luminescent

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US7504770B2 (en) * 2005-02-09 2009-03-17 Osram Opto Semiconductors Gmbh Enhancement of light extraction with cavity and surface modification
DE102009037185B4 (de) * 2009-05-29 2018-11-22 Osram Oled Gmbh Organische Leuchtdiode
WO2013130483A1 (fr) * 2012-02-27 2013-09-06 Jian Li Dispositif de diode électroluminescente organique à microcavité à émetteurs phosphorescents à bande étroite
JP2014078499A (ja) * 2012-09-20 2014-05-01 Toshiba Corp 有機電界発光素子および発光装置

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JP2007059116A (ja) * 2005-08-23 2007-03-08 Sony Corp 表示装置
DE102008020816A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Organische Leuchtdiode, Kontaktanordnung und Verfahren zur Herstellung einer organischen Leuchtdiode
US20110215362A1 (en) * 2010-03-02 2011-09-08 Kabushiki Kaisha Toshiba Illumination device and method for manufacturing same
DE102012221191A1 (de) * 2012-11-20 2014-05-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
WO2014087482A1 (fr) * 2012-12-04 2014-06-12 パイオニア株式会社 Dispositif luminescent

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