WO2016101361A1 - 一种非晶硅表面氧化层形成方法 - Google Patents

一种非晶硅表面氧化层形成方法 Download PDF

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WO2016101361A1
WO2016101361A1 PCT/CN2015/070622 CN2015070622W WO2016101361A1 WO 2016101361 A1 WO2016101361 A1 WO 2016101361A1 CN 2015070622 W CN2015070622 W CN 2015070622W WO 2016101361 A1 WO2016101361 A1 WO 2016101361A1
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amorphous silicon
oxide layer
forming
hydrofluoric acid
silicon surface
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戴天明
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for forming an amorphous silicon surface oxide layer.
  • the excimer laser annealing (ELA) process converts amorphous silicon (a-si) directly into polysilicon (Poly-Si), in LTPS.
  • a-si amorphous silicon
  • Poly-Si polysilicon
  • Thin film transistor liquid crystal process is extremely important. Before performing ELA, it is generally necessary to treat the a-si surface accordingly, removing the loose and uneven oxide layer that naturally grows on the surface, and growing a uniform dense oxide layer on the surface. .
  • the prior art will first remove the natural oxide layer on the surface by hydrofluoric acid (HF), and then form a dense SiOx oxide layer by O3 oxidation of the a-si surface, but the surface is a-si hydrophobic after HF treatment, During the subsequent oxidation of O3, the surface of O3 dissolved in water is not uniformly contacted with a-si, which makes the surface oxide layer of amorphous silicon uneven, which in turn affects the uniformity of subsequent ELA crystal surface.
  • HF hydrofluoric acid
  • the invention provides a method for forming an oxide layer on an amorphous silicon surface, which improves the uniformity of the oxide layer on the surface of the amorphous silicon.
  • the present invention provides a method for forming an amorphous silicon surface oxide layer, comprising the steps of: washing the surface of the amorphous silicon with hydrofluoric acid; and cleaning the surface of the amorphous silicon washed with hydrofluoric acid using water; Drying the surface of the amorphous silicon after water cleaning; forming a first oxide layer on the surface of the dried amorphous silicon by extreme ultraviolet lithography; cleaning the amorphous silicon having the oxide layer by using an oxidizing solution
  • the surface 2 forms a second oxide layer; the surface of the amorphous silicon having the second oxide layer is dried.
  • the oxidizing solution is ozone water having a concentration of 10 to 50 ppm, and the cleaning time is 20 s to 70 s.
  • the first oxide layer is silicon oxide having a thickness of 10 A.
  • the second oxide layer is silicon oxide having a thickness of 20 to 50 ⁇ .
  • the intensity of the extreme ultraviolet light is 20-500 mw/cm 2 and the duration is 1 s- 10s.
  • the hydrofluoric acid on the surface of the amorphous silicon is washed with purified water.
  • the surface of the amorphous silicon after water washing it is dried by air knife with a clean N2 for a duration of 1 s to 10 s.
  • the drying method is dry drying or spin drying using clean N2.
  • the cleaning time is 20 s, and the hydrofluoric acid concentration is 0.25% to 3%.
  • the first oxidation is formed on the surface of the amorphous silicon by using an ultra-violet lithography method between the use of hydrofluoric acid cleaning and the cleaning of the surface of the amorphous silicon with an oxidizing solution.
  • the layer further makes the amorphous silicon surface hydrophilic and uniform in water distribution, so that the oxidizing solution can be contacted with amorphous silicon in time and uniformly for oxidation treatment, and a uniform oxide layer is formed on the surface of the amorphous silicon, thereby Uniform high quality polycrystalline silicon can be prepared when ELA is crystallized.
  • FIG. 1 is a flow chart of a method for forming an amorphous silicon surface oxide layer according to a preferred embodiment of the present invention.
  • FIG. 1 is a flow chart of a method for forming an amorphous silicon surface oxide layer according to a preferred embodiment of the present invention.
  • the method for forming an amorphous silicon surface oxide layer includes the following steps:
  • Step S1 washing the surface of the amorphous silicon with hydrofluoric acid
  • Step S2 washing the surface of the amorphous silicon washed with hydrofluoric acid with water;
  • Step S3 drying the surface of the amorphous silicon after water washing
  • Step S4 forming a first oxide layer on the surface of the dried amorphous silicon by using extreme ultraviolet lithography
  • Step S5 cleaning the surface of the amorphous silicon having the oxide layer with an oxidizing solution to form a second oxide layer;
  • step S6 the surface of the amorphous silicon having the second oxide layer is dried.
  • the surface of the amorphous silicon is washed with hydrofluoric acid, specifically, the hydrofluoric acid is reacted with the oxide layer to wash away the oxide of the surface of the amorphous silicon.
  • the specific cleaning time is between 20s and 40S, and the concentration of hydrofluoric acid used is 0.25% to 3%.
  • the surface of the amorphous silicon washed with hydrofluoric acid is washed with water. It is preferred to wash the hydrofluoric acid on the surface of the amorphous silicon with purified water.
  • the cleaning time is 10-70s. High pressure water without impurities can also be used.
  • the surface of the amorphous silicon after water cleaning is dried by a air knife with a clean N2 for a duration of 1 s to 10 s, and a flow rate of N 2 is 400 NL/min to avoid surface residual of the amorphous silicon.
  • Water substance a step that affects subsequent oxidation.
  • the extreme ultraviolet lithography is to form a first oxide layer on the surface of the dried amorphous silicon by photodecomposition of oxygen, the first oxide layer being silicon oxide having a thickness of 10 A, and further
  • the amorphous silicon surface is highly hydrophilic and has a uniform water distribution.
  • the intensity of the extreme ultraviolet light is 20-500 mw/cm2 and the duration is 1 s-10 s.
  • the surface of the amorphous silicon having the oxide layer is washed with an oxidizing solution to form a second oxide layer, and the second oxide layer is silicon oxide having a thickness of 20 to 50 ⁇ .
  • the oxidizing solution is ozone water having a concentration of 10 to 50 ppm, and the cleaning time with the oxidizing solution is 20 s to 70 s. Due to the The surface of the amorphous silicon has been formed into a first oxide layer by EUV in step 4, and has a thickness of about 10 A. Therefore, in the process of contacting the ozone water with the first oxide layer, no hydrophobic phenomenon occurs, and the ozone water incorporated into the water is The oxidation of amorphous silicon is very uniform.
  • the surface of the amorphous silicon having the second oxide layer is finally subjected to a drying treatment, which is performed by dry N2 drying or spin drying.
  • the first oxidation is formed on the surface of the amorphous silicon by using an ultra-violet lithography method between the use of hydrofluoric acid cleaning and the cleaning of the surface of the amorphous silicon with an oxidizing solution.
  • the layer further makes the amorphous silicon surface hydrophilic and uniform in water distribution, so that the oxidizing solution can be contacted with amorphous silicon in time and uniformly for oxidation treatment, and a uniform oxide layer is formed on the surface of the amorphous silicon, thereby Uniform high quality polycrystalline silicon can be prepared when ELA is crystallized.

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  • Cleaning Or Drying Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Silicon Compounds (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

一种非晶硅表面氧化层形成方法，其包括以下步骤：使用氢氟酸清洗所述非晶硅的表面；使用水清洗经过氢氟酸清洗的所述非晶硅的表面；对水清洗后的所述非晶硅的表面干燥；采用极紫外光刻方式在干燥后的所述非晶硅的表面形成第一氧化层；采用氧化性溶液清洗具有所述氧化层的非晶硅的表面二形成第二氧化层；对具有第二氧化层的所述非晶硅的表面进行干燥。采用极紫外光刻方式在所述非晶硅的表面形成第一氧化层，进而使所述非晶硅表面亲水性强，水的分布均匀。

Description

一种非晶硅表面氧化层形成方法
本发明要求2014年12月24日递交的发明名称为“一种非晶硅表面氧化层形成方法”的申请号201410819897.0的在先申请优先权，上述在先申请的内容以引入的方式并入本文本中。
技术领域
本发明涉及显示技术领域，尤其涉及一种非晶硅表面氧化层形成方法。
背景技术
在低温多晶硅(low temperature poly-silicon，简称为LTPS)薄膜晶体管液晶制程中，准分子激光退火(ELA)工艺是将非晶硅(a-si)直接转化为多晶硅(Poly-Si)，在LTPS薄膜晶体管液晶制程中极为重要，在进行ELA之前，一般需要对于a-si表面进行相应的处理，去掉表面自然生长的疏松和不均匀的氧化层，在其表面生长一层均匀的致密的氧化层。现有的技术会先通过氢氟酸(HF)去除表面的自然氧化层，然后通过O3氧化a-si表面生成致密的SiOx氧化层，但由于HF处理后表面为a-si具有疏水性，使得后续进行O3氧化的过程中，溶解到水中的O3与a-si表面接触不均匀，使得非晶硅表面氧化层不均匀，进而影响后续ELA结晶表面均匀性。
发明内容
本发明提供一种非晶硅表面氧化层形成方法，提高非晶硅表面氧化层均匀性。
本发明提供一种非晶硅表面氧化层形成方法，其包括以下步骤：使用氢氟酸清洗所述非晶硅的表面；使用水清洗经过氢氟酸清洗的所述非晶硅的表面；对水清洗后的所述非晶硅的表面干燥；采用极紫外光刻方式在干燥后的所述非晶硅的表面形成第一氧化层；采用氧化性溶液清洗具有所述氧化层的非晶硅的表面二形成第二氧化层；对具有第二氧化层的所述非晶硅的表面进行干燥。
其中，所述氧化性溶液为浓度10～50ppm的臭氧水，清洗时间为20s-70s。
其中，在采用极紫外光刻方式在干燥后的所述非晶硅的表面形成第一氧化层的步骤中，所述第一氧化层为厚度是10A的氧化硅。
其中，在采用氧化性溶液清洗具有所述氧化层的非晶硅的表面二形成第二氧化层的步骤中，所述第二氧化层为厚度为20～50A的氧化硅。
其中，在所述采用极紫外光刻方式在干燥后的所述非晶硅的表面形成第一氧化层的步骤中，使用极紫外光的强度为20-500 mw/cm2，持续时间为1s-10s。
其中，所述使用水清洗经过氢氟酸清洗的所述非晶硅的表面的步骤中，采用纯净水进行清洗所述非晶硅的表面的氢氟酸。
其中，在对水清洗后的所述非晶硅的表面干燥的步骤中，采用洁净N2通过风刀吹干，持续时间为1s～10s。
其中，在所述对具有第二氧化层的所述非晶硅的表面进行干燥的步骤中，所述干燥方式为采用洁净N2吹干或者旋转甩干。
其中，在所述步骤使用氢氟酸清洗所述非晶硅的表面中，清洗时间为20s，氢氟酸浓度为0.25％～3％。
本发明的非晶硅表面氧化层形成方法中，在使用氢氟酸清洗与采用氧化性溶液清洗非晶硅的表面之间采用极紫外光刻方式在所述非晶硅的表面形成第一氧化层，进而使所述非晶硅表面亲水性强，水的分布均匀，使氧化性溶液能够及时、均匀地接触非晶硅进行氧化处理，在非晶硅表面生成均匀的氧化层，从而在ELA结晶时可以制备出均匀的高品质的多晶硅。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为为本发明较佳实施方式的非晶硅表面氧化层形成方法的流程图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清 楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，图1为本发明较佳实施方式的非晶硅表面氧化层形成方法的流程图。所述非晶硅表面氧化层形成方法包括以下步骤：
步骤S1，使用氢氟酸清洗所述非晶硅的表面；
步骤S2，使用水清洗经过氢氟酸清洗的所述非晶硅的表面；
步骤S3，对水清洗后的所述非晶硅的表面干燥；
步骤S4，采用极紫外光刻方式在干燥后的所述非晶硅的表面形成第一氧化层；
步骤S5，采用氧化性溶液清洗具有所述氧化层的非晶硅的表面二形成第二氧化层；
步骤S6，对具有第二氧化层的所述非晶硅的表面进行干燥。
本实施例中，所述使用氢氟酸清洗所述非晶硅的表面，具体是利用所述氢氟酸与氧化层发生反应，清洗掉所述所述非晶硅的表面的氧化物。具体清洗时间为20s到40S之间，所使用的氢氟酸浓度为0.25％～3％。
本实施例中，为避免残留在非晶硅表面的氢氟酸对后续步骤的影响，使用水清洗经过氢氟酸清洗的所述非晶硅的表面。优选采用纯净水进行清洗所述非晶硅的表面的氢氟酸。清洗时间为10-70s。也可以用不含杂质的高压水。
本实施例中，对水清洗后的所述非晶硅的表面采用洁净N2通过风刀吹干，持续时间为1s～10s，N2的流速为400NL/min，避免所述非晶硅的表面残留水物质，影响后续氧化的步骤。
本实施例中，所述极紫外光刻是通过光分解氧气在干燥后的所述非晶硅的表面形成第一氧化层，所述第一氧化层为厚度是10A的氧化硅，进而使所述非晶硅表面亲水性强，水的分布均匀。其中使用极紫外光的强度为20-500mw/cm2，持续时间为1s-10s。
本实施例中，采用氧化性溶液清洗具有所述氧化层的非晶硅的表面二形成第二氧化层，所述第二氧化层为厚度为20～50A的氧化硅。所述氧化性溶液为浓度10～50ppm的臭氧水，用所述氧化性溶液清洗时间为20s-70s。由于所述 非晶硅表面在步骤4中已经用EUV生成形成第一氧化层，厚度大约10A，所以在臭氧水与第一氧化层接触的过程中，不会出现疏水的现象，融入水中的臭氧水对于所述非晶硅的氧化会非常均匀。
本实施例中，最后对具有所述第二氧化层的所述非晶硅的表面进行干燥处理，所述干燥方式为采用洁净N2吹干或者旋转甩干。
本发明的非晶硅表面氧化层形成方法中，在使用氢氟酸清洗与采用氧化性溶液清洗非晶硅的表面之间采用极紫外光刻方式在所述非晶硅的表面形成第一氧化层，进而使所述非晶硅表面亲水性强，水的分布均匀，使氧化性溶液能够及时、均匀地接触非晶硅进行氧化处理，在非晶硅表面生成均匀的氧化层，从而在ELA结晶时可以制备出均匀的高品质的多晶硅。
以上所揭露的仅为本发明一种较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。

Claims (9)

  1. 一种非晶硅表面氧化层形成方法，其包括以下步骤：
    使用氢氟酸清洗所述非晶硅的表面；
    使用水清洗经过氢氟酸清洗的所述非晶硅的表面；
    对水清洗后的所述非晶硅的表面干燥；
    采用极紫外光刻方式在干燥后的所述非晶硅的表面形成第一氧化层；
    采用氧化性溶液清洗具有所述氧化层的非晶硅的表面二形成第二氧化层；
    对具有第二氧化层的所述非晶硅的表面进行干燥。
  2. 如权利要求1所述的一种非晶硅表面氧化层形成方法，其中，所述氧化性溶液为浓度10～50ppm的臭氧水，清洗时间为20s-70s。
  3. 如权利要求2所述的一种非晶硅表面氧化层形成方法，其中，在采用极紫外光刻方式在干燥后的所述非晶硅的表面形成第一氧化层的步骤中，所述第一氧化层为厚度是10A的氧化硅。
  4. 如权利要求3所述的一种非晶硅表面氧化层形成方法，其中，在采用氧化性溶液清洗具有所述氧化层的非晶硅的表面二形成第二氧化层的步骤中，所述第二氧化层为厚度为20～50A的氧化硅。
  5. 如权利要求1所述的一种非晶硅表面氧化层形成方法，其中，在所述采用极紫外光刻方式在干燥后的所述非晶硅的表面形成第一氧化层的步骤中，使用极紫外光的强度为20-500mw/cm2，持续时间为1s-10s。
  6. 如权利要求1所述的一种非晶硅表面氧化层形成方法，其中，所述使用水清洗经过氢氟酸清洗的所述非晶硅的表面的步骤中，采用纯净水进行清洗所述非晶硅的表面的氢氟酸。
  7. 如权利要求1所述的一种非晶硅表面氧化层形成方法，其中，在对水清洗后的所述非晶硅的表面干燥的步骤中，采用洁净N2通过风刀吹干，持续时间为1s～10s。
  8. 如权利要求1所述的一种非晶硅表面氧化层形成方法，其中，在所述 对具有第二氧化层的所述非晶硅的表面进行干燥的步骤中，所述干燥方式为采用洁净N2吹干或者旋转甩干。
  9. 如权利要求1所述的一种非晶硅表面氧化层形成方法，其中，在所述步骤使用氢氟酸清洗所述非晶硅的表面中，清洗时间为20s，氢氟酸浓度为0.25％～3％。
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