WO2016082357A1 - 叠层有机电致发光器件及其制作方法和显示装置 - Google Patents

叠层有机电致发光器件及其制作方法和显示装置 Download PDF

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WO2016082357A1
WO2016082357A1 PCT/CN2015/073104 CN2015073104W WO2016082357A1 WO 2016082357 A1 WO2016082357 A1 WO 2016082357A1 CN 2015073104 W CN2015073104 W CN 2015073104W WO 2016082357 A1 WO2016082357 A1 WO 2016082357A1
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layer
connection layer
doped
guest
gradient
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French (fr)
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毕文涛
焦志强
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京东方科技集团股份有限公司
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Priority to US14/776,556 priority Critical patent/US20160372695A1/en
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Definitions

  • Embodiments of the present invention generally relate to the field of light emitting devices, and more particularly to a stacked organic electroluminescent device, a method of fabricating the same, and a display device including the stacked organic electroluminescent device.
  • Organic electroluminescent devices eg, OLED
  • OLED Organic electroluminescent devices
  • the researcher has superimposed a plurality of light emitting units in the organic electroluminescent device, and is connected by a connecting layer between the light emitting units to form a stacked organic electroluminescent device.
  • the device has the characteristics of low current density, thereby effectively avoiding the thermal quenching effect caused by the excess current and improving the current efficiency, brightness, and lifetime of the organic electroluminescent device.
  • Embodiments of the present invention provide a stacked organic electroluminescent device, a manufacturing method thereof, and a display device to reduce the number of layers of the laminated organic electroluminescent device and improve the luminous efficiency thereof.
  • a laminated organic electroluminescent device comprising at least two light emitting units stacked, and a connecting layer for connecting adjacent two light emitting units, each The light emitting unit comprises a light emitting layer, and the connecting layer comprises a lower sub connecting layer and an upper sub connecting layer which are sequentially stacked and connected, wherein the at least one sub connecting layer is a gradient doping connecting layer directly contacting the adjacent emitting layer.
  • the gradient doped connection layer may be composed of a host and a dopant guest, the mass percentage of the doped guest being in contact with the luminescent layer of the gradient doped connection layer
  • One side is 0 and is incremented toward the other side of the gradient doped connection layer that is not in contact with the luminescent layer and reaches a maximum on the other side that is not in contact with the luminescent layer.
  • the upper limit of the maximum value when the doping guest is a metal, the upper limit of the maximum value may be 30 wt%; when the doping guest is a metal compound, the upper limit of the maximum value may be It is 50% by weight; when the doping guest is an organic substance, the upper limit of the maximum value may be 80% by weight.
  • the metal may be at least one selected from the group consisting of lithium, potassium, rubidium, cesium, magnesium, calcium, and sodium; and the metal compound may be selected from the group consisting of molybdenum trioxide and pentoxide. At least one of vanadium, tungsten trioxide, cesium carbonate, lithium fluoride, lithium carbonate, sodium chloride, iron chloride, and triiron tetroxide; the organic matter may be selected from the group consisting of C 60 , pentacene, and F4-TCNQ At least one of a hydrazine derivative.
  • the lower sub-connection layer when the upper sub-connection layer is an N-type gradient doped layer, the lower sub-connection layer may be a P-type gradient doped layer, a P-type uniformly doped layer, and a P-type Any one of the undoped layers; when the upper sub-connection layer is a P-type gradient doped layer, the lower sub-connection layer may be an N-type uniformly doped layer, an N-type undoped layer, and an N-type gradient Any one of the doped layers.
  • only one of the sub-junction layers and the upper sub-connection layer may be a gradient-doped connection layer, and the light-emitting unit adjacent to the other sub-connection layer may include the other The carrier transport layer in contact with the sub-connection layer.
  • the gradient-doped connection layer may have a thickness of 20 nm to 120 nm.
  • a method of fabricating a stacked organic electroluminescent device comprising the steps of:
  • At least one of the lower sub-connection layer and the upper sub-connection layer is formed as a gradient doped connection layer directly contacting the adjacent luminescent layer.
  • the gradient doped connection layer may be composed of a host and a doped guest, the doped guest being formed such that its mass percentage is in contact with the adjacent luminescent layer of the gradient doped connection layer One side is 0 and is incremented toward the other side of the gradient doped connection layer that is not in contact with the adjacent luminescent layer, and has a maximum on the other side that is not in contact with the adjacent luminescent layer.
  • the doping object when the lower sub-connection layer is a gradient doped connection layer, when the gradient doped connection layer is formed, the doping object can be uniformly maintained by maintaining the evaporation rate of the main body unchanged.
  • the evaporation rate may be achieved by maintaining the evaporation rate of the doped guest material at a set value and uniformly reducing the evaporation rate of the host material, or uniformly increasing the evaporation rate of the host material while increasing the evaporation rate of the dopant guest material.
  • the mass percentage of the doped guest increases uniformly as the thickness of the lower sub-layer increases, until the mass percentage of the doped guest reaches a maximum.
  • the doping object when the upper sub-connection layer is a gradient doped connection layer, when the gradient doped connection layer is formed, the doping object can be uniformly reduced by maintaining the evaporation rate of the main body
  • the evaporation rate may be either by maintaining the evaporation rate of the doped guest material at a set value and uniformly increasing the evaporation rate of the host material, or uniformly increasing the evaporation rate of the host material while uniformly decreasing the evaporation rate of the dopant guest material,
  • the mass percentage of the doping guest is uniformly reduced from the maximum value as the thickness of the upper sub-joining layer increases until the mass percentage of the doping guest drops to zero.
  • the upper limit of the maximum value when the doping guest is a metal, the upper limit of the maximum value may be 30 wt%; when the doping guest is a metal compound, the upper limit of the maximum value may be 50 wt%; When the doping guest is an organic substance, the upper limit of the maximum value may be 80% by weight.
  • the first light-emitting unit may be sequentially deposited on the first light-emitting unit by any one selected from the group consisting of vacuum evaporation, spin coating, organic vapor jet printing, organic vapor deposition, screen printing, and inkjet printing.
  • the sub-connection layer and the upper sub-connection layer are described.
  • the evaporation rate of the dopant guest may range from 0 to 0.4 nm/s.
  • the gradient doping connection layer may have a thickness of 20 nm to 120 Nm.
  • a display device comprising the above-described laminated organic electroluminescent device or the laminated organic electroluminescent device obtained according to the foregoing manufacturing method.
  • Embodiments of the present invention provide a stacked organic electroluminescent device, a method of fabricating the same, and a display device including the stacked organic electroluminescent device, in the laminated organic electroluminescent device, in a connection layer At least one sub-connection layer is provided as a gradient-doped connection layer, and the laminated organic electroluminescent device provided by the present invention is provided because the gradient-doped connection layer can replace the injection layer and the transmission layer to assist carrier injection and transmission.
  • the injection layer and the transport layer are not required to be disposed between the light-emitting layer and the gradient-doped connection layer, so that the number of functional layers included in the stacked organic electroluminescent device can be reduced, and the laminated organic electroluminescent device can be reduced.
  • the required driving voltage which in turn increases its luminous efficiency.
  • Example 1 is a schematic structural view of a stacked organic electroluminescent device according to Example 1 of the present invention.
  • Example 2 is a schematic structural view of a stacked organic electroluminescent device according to Example 2 of the present invention.
  • Example 3 is a schematic structural view of a stacked organic electroluminescent device according to Example 3 of the present invention.
  • Fig. 4 is a schematic structural view of a laminated organic electroluminescent device according to a comparative example.
  • Embodiments of the present invention provide a stacked organic electroluminescent device comprising stacked to Two light emitting units, and a connecting layer for connecting two adjacent light emitting units, each of the light emitting units includes a light emitting layer; the connecting layer includes a lower sub connecting layer and an upper sub connecting layer which are sequentially stacked and connected, wherein at least one The sub-connection layer is a gradient doped connection layer that directly contacts its adjacent luminescent layer.
  • each of the light-emitting units in the stacked organic electroluminescent device includes a transport layer and an implant layer, and further, in order to avoid the problem of degrading of the exciton, the luminous efficiency is lowered, usually in the transport layer and the light-emitting unit.
  • the charge buffer layer is interposed so that the number of functional layers included in the device is greatly increased.
  • the increase of the number of functional layers will undoubtedly lead to an increase in the interface barrier between the layers in the device, which in turn leads to an increase in the operating voltage of the device, which affects the luminous efficiency of the stacked organic electroluminescent device.
  • embodiments of the present invention set at least one sub-connection layer in the connection layer to be gradient doped.
  • Connection layer may have the same host material as the prior art transmission layer material, and can better realize carrier transmission; and, the components in the gradient doping connection layer are The mass percentage changes uniformly with the increase of its thickness, and there is no mutation, and the interface barrier between the layers can be effectively reduced.
  • Embodiments of the present invention provide a stacked organic electroluminescent device in which at least one sub-connection layer in a connection layer is provided as a gradient doped connection layer due to a gradient doping connection
  • the layer can replace the injection layer and the transport layer to assist in the injection and transport of carriers, so that in the laminated organic light-emitting device provided by the present invention, it is not necessary to provide an injection layer and a transfer between the light-emitting layer and the gradient-doped connection layer.
  • the layer can reduce the number of functional layers included in the laminated organic electroluminescent device, reduce the required driving voltage of the stacked organic electroluminescent device, and thereby improve the luminous efficiency.
  • the gradient doped connection layer is composed of a host and a doped guest, wherein a mass percentage of the doped guest contacts one of the luminescent layer in the gradient doped connection layer
  • the side is 0 and is increasing toward the other side of the gradient doped connection layer that is not in contact with the luminescent layer, and finally reaches a maximum at the other side that is not in contact with the luminescent layer.
  • the mass percentage of the doped guest in the gradient doped connection layer is set to 0 on the side contacting the light-emitting layer while leaving it on the other side not contacting the light-emitting layer. (the boundary between the upper sub-connection layer and the lower sub-connection layer in the connection layer) is set to a maximum value, which is intended to set the mass percentage of the doped guest in the gradient-doped connection layer to be relatively low on the side close to the light-emitting unit, Enabling it to better carry out carrier transport, while The relatively far side of the side away from the light unit makes it possible to better complete the injection of carriers. Therefore, the gradient doped connection layer provided by the embodiment can better replace the injection layer and the transmission layer to reduce the number of functional layers included in the laminated organic electroluminescent device, thereby reducing the required operating voltage and improving its Luminous efficiency.
  • an upper limit of the maximum value when the doping guest is a metal, an upper limit of the maximum value is about 30% by weight; when the doping guest is a metal compound, an upper limit of the maximum value is about 50% by weight; when the doping guest is an organic substance, the upper limit of the maximum value is about 80% by weight.
  • the doping guest provided by the present embodiment mainly serves to provide carriers in the connection layer. Since the doping guest (such as some metals) will diffuse in the organic body over time, resulting in a decrease in device lifetime, it is required The mass percentage of the doped guest in the gradient doped connection layer is kept within a reasonable range to avoid the undesirable phenomenon that the mass percentage of the doped guest is too low or too high.
  • the metal Since there are many free electrons inside the metal, good electron transport characteristics (ie, high electron mobility), good electron affinity, and high ionization energy, it is easy to inject electrons into the light-emitting layer, and can be well Blocking the injection of holes, so generally used as a doping guest for the N-type doped layer; while the organic material has good hole transport properties (ie, high hole mobility), low electron affinity, and easy to be in the light-emitting layer.
  • the hole is injected and can well block the injection of electrons, so it is generally used as a doping guest of the P-type doped layer; the metal oxide carrier injection characteristics are somewhere in between, and those skilled in the art can Select the appropriate doping object for the situation.
  • the metal-doped guest since the metal-doped guest has high conductivity, high ability to provide carriers, and relatively active chemical properties, the upper limit of the mass percentage is relatively low, about 30% by weight; In contrast, the doping of organic matter is weaker and the ability to provide carriers is relatively weak, so the upper limit of the mass percentage is relatively high, about 80% by weight; The heterogeneous body is somewhere in between, so the upper limit of the mass percentage is usually about 50% by weight. Selecting a suitable mass percentage range according to the selected doping guest can effectively enable the gradient doping connection layer to provide sufficient carriers to the luminescent layer, and the conductivity is moderate, and the deterioration of the connection layer can be avoided.
  • the metal is at least one selected from the group consisting of lithium, potassium, rubidium, cesium, magnesium, calcium, and sodium; and the metal compound is selected from the group consisting of molybdenum trioxide, vanadium pentoxide, and three At least one of tungsten oxide, cesium carbonate, lithium fluoride, lithium carbonate, sodium chloride, iron chloride, and triiron tetroxide; the organic matter is selected from the group consisting of C 60 , pentacene, and F4-TCNQ (2, 3) At least one of 5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone) and an anthracene derivative.
  • the gradient doped connection layer can substantially complete the carrier transport, and in order to make the carrier more smoothly injected into the light-emitting layer, it is also necessary to select a suitable dopant object.
  • the doping guest provided in the embodiments of the present invention has good film formability and thermal stability, and is not easily crystallized, so that finally a film layer having uniform texture can be formed. It can be understood that the doping guest used in the gradient doping connection layer is not limited to the above materials, and the above materials are only preferred examples which can be used as doping guests, and those skilled in the art can also have according to the doping guest. Features choose the right material in a wider range.
  • the lower sub-connection layer when the upper sub-connection layer is an N-type gradient doped layer, the lower sub-connection layer may be a P-type gradient doped layer, a P-type uniformly doped layer, and a P-type non- Any one of the doped layers; when the upper sub-connecting layer is a P-type gradient doped layer, the lower sub-connecting layer is an N-type uniformly doped layer, an N-type undoped layer, and an N-type gradient doping layer Any of the layers.
  • the preferred structure is a combination of an N-type gradient doped layer and a P-type gradient doped layer.
  • the gradient doped connection layer can replace the injection layer and the transport layer to inject and transport carriers.
  • N-type gradient doped layer implants and transports electron carriers;
  • P-type gradient doped layer implants and transports hole carriers, and therefore, in order to reduce laminated organic electroluminescent devices to a greater extent
  • the number of functional layers included in the connection layer is set to the gradient doping connection layer in the upper and lower sub-connection layers in the connection layer to maximize the luminous efficiency.
  • a transport layer may be disposed between the connection layer and the light-emitting unit. Since the transport layer can better carry out carrier transport, the transport layer is provided to improve the light-emitting capability of the stacked organic electroluminescent device. . On the other hand, although the provision of the transmission layer will improve the illuminating ability of the device to a certain extent, it cannot be ignored that it also has a certain influence on the luminous efficiency. Therefore, those skilled in the art need to make a judgment according to the actual situation to select whether An electron transport layer and/or a hole transport layer are reasonably disposed on both sides of the connection layer.
  • the connecting layer provided by the embodiment of the present invention is used for connecting adjacent light emitting units in the stacked organic electroluminescent device, and the single stacked organic electroluminescent device may include a plurality of the above according to the number of the light emitting units.
  • the connecting layer is used to better reduce the number of layers included in the laminated organic electroluminescent device and improve luminous efficiency.
  • the illumination unit of the present invention The illuminating color may be red, green, and blue, and the illuminating layer in each illuminating unit may be a doped layer or an undoped layer, and a person skilled in the art may select a suitable illuminating unit to prepare a laminated organic electro luminescence according to actual needs. Device.
  • the embodiment of the present invention further provides a method for fabricating a stacked organic electroluminescent device provided by the above embodiments, comprising: forming a first light emitting unit including a first light emitting layer; and sequentially forming a lower sub-connection on the first light emitting unit a layer and an upper sub-connection layer; and forming a second light-emitting unit including the second light-emitting layer on the upper sub-connection layer, wherein at least one of the lower sub-connection layer and the upper sub-connection layer is formed to directly contact the gradient of the adjacent light-emitting layer Miscellaneous connection layer.
  • the evaporation rate of the host and the dopant guest of the gradient doping layer may be controlled to adjust the gradient doping connection between the host and the dopant guest.
  • the percentage of mass in the layer enables the gradient doping connection layer to be fabricated without introducing new equipment, thereby reducing the manufacturing cost and manufacturing difficulty of the laminated organic electroluminescent device provided by the present invention.
  • the doping can be made by maintaining the evaporation rate of the body constant, uniformly or gradually increasing the evaporation rate of the doping guest.
  • the mass percentage of the guest uniformly increases as the thickness of the lower sub-connection layer increases until the mass percentage of the doping guest reaches a maximum value;
  • the upper sub-connection layer is a gradient doped connection layer,
  • the evaporation rate of the main body is constant, uniformly or gradually decreasing the evaporation rate of the doping guest, so that the mass percentage of the doping guest uniformly decreases from the maximum value as the thickness of the upper sub-connection layer increases, until The mass percentage of the doped guest is reduced to zero.
  • the purpose of doping in the film layer is achieved by a method of simultaneously evaporating and depositing the host material and the doped guest material. Since the mass percentage of the host material and the dopant guest material in the gradient doped connection layer depends on its vapor deposition rate, and the vapor deposition rate of the host material and the dopant guest material is in turn dependent on its evaporation rate, embodiments of the present invention pass uniform or The method of gradually changing the evaporation rate of the doped guest material to uniformly change the mass percentage of the doped guest with the increase of the thickness to produce a gradient doped connection layer.
  • the lower sub-connection layer is a gradient-doped connection layer
  • the mass percentage of the doped guest is 0 on the lower bottom surface, and the upper and lower surfaces on the upper surface (ie, the upper and lower sides in the connection layer)
  • the junction of the connection layers is maximized.
  • the host material and the doped guest material are first preheated, and the evaporation rate of the host material reaches a set value and remains unchanged.
  • the doped guest material When the time is changed, the doped guest material is heated to start to evaporate, and at the same time as the host material begins to deposit, the evaporation rate of the doped guest material is uniformly increased from 0, and deposition is started together with the host material until the evaporation rate of the doped guest material reaches The preset maximum value.
  • the evaporation rate of the doped guest material can also be kept at a set value, and the evaporation rate of the host material can be uniformly reduced; or in the doping object While the evaporation rate of the material is increased, the evaporation rate of the host material is uniformly reduced so that the mass percentage of the dopant guest uniformly increases as the thickness of the lower sub-layer increases.
  • a person skilled in the art can select a suitable rate control mode according to actual equipment and process conditions. It should be noted that the evaporation rate of each material is determined by its temperature. Therefore, those skilled in the art can control the temperature of each material. Control its evaporation rate.
  • the mass percentage of the doped guest of the upper sub-connection layer is at a maximum at the lower bottom surface (ie, at the junction of the two sub-connection layers), and The bottom surface is uniformly lowered toward the upper surface and lowered to 0 on the upper surface.
  • the doping guest material and the host material can be preheated, and after each reaching a predetermined evaporation rate, deposition is simultaneously started, and at the same time as the deposition is started.
  • the evaporation rate of the doped guest material is uniformly reduced from the set maximum value until it falls to zero, so that the mass percentage of the doping guest in the upper sub-connection layer uniformly decreases as the thickness of the upper sub-connection layer increases.
  • the evaporation rate of the doped guest material can be made constant, and the evaporation rate of the host material can be uniformly increased; or in the doping of the guest material. While the evaporation rate is uniformly reduced, the evaporation rate of the host material is uniformly increased, so that the mass percentage of the dopant guest uniformly decreases as the thickness of the upper sub-connection layer increases, and the principle is mentioned in the preparation of the lower sub-connection layer described above. , will not repeat them here.
  • an upper limit of the maximum value when the doping guest is a metal, an upper limit of the maximum value is about 30% by weight; when the doping guest is a metal compound, an upper limit of the maximum value is about 50% by weight; when the doping guest is an organic substance, the upper limit of the maximum value is about 80% by weight.
  • the mass percentage depends on the respective evaporation rate, and the evaporation rate corresponds to the temperature of the material. Therefore, it is necessary to set the temperature value of the material according to the material characteristics, equipment, environment, etc., so that the gradient doping the doping object in the connection layer The mass percentage range meets the requirements of the device.
  • the method is sequentially deposited on the light emitting unit by any one selected from the group consisting of vacuum evaporation, spin coating, organic vapor jet printing, organic vapor deposition, screen printing, and inkjet printing. a lower sub-connection layer and the upper sub-connection layer.
  • the film forming methods of the light emitting devices are various, and each has different advantages and disadvantages: for example, the spin coating process is simple and easy to operate, but the utilization rate of the materials is not high; the purity of the film layer produced by the organic vapor deposition process is high, But the cost is relatively high.
  • a vacuum evaporation process is preferably used to prepare a gradient doped connection layer.
  • the vacuum evaporation process is to vacuum or sublimate the substance to be film-formed onto the surface of the workpiece or substrate.
  • the precipitation process is advantageous in that the film forming quality is uniform and compact, the film forming speed is fast, and the manufacturing of the gradient doping connection layer in the present invention can be completed without improving the existing vapor deposition equipment, which can be well reduced.
  • the manufacturing cost of the connection layer It can be understood that the method of sequentially depositing the lower sub-connection layer and the upper sub-connection layer on the light-emitting unit is not limited to the above method, and those skilled in the art can select other methods according to actual conditions.
  • the evaporation rate of the dopant guest ranges from 0 to 0.4 nm/s. Since the evaporation rate of the doped guest has a great influence on the formation of the gradient doped connection layer, the slow evaporation rate will cause the gradient doped connection layer to form slowly, and the too fast will lead to each group in the gradient doped connection layer.
  • the mass percentage of the fraction is not easy to control, so the evaporation rate of the doped guest of the embodiment of the present invention is in the range of 0 to 0.4 nm/s, and preferably the evaporation rate is 0.3 nm/s, which is acceptable in the evaporation apparatus. In the range, a high-performance gradient doped connection layer is efficiently manufactured.
  • the gradient doped connection layer has a thickness of 20 nm to 120 nm. Since the gradient doped connection layer has different effects from the conventional connection layer, it needs to simultaneously perform the functions of the transmission layer and the injection layer in the prior art, so it must ensure a certain thickness so that the mass percentage of the doped object has Sufficient adjustment space is required to perform the function of the injection layer well; further, the portion of the doped guest having a lower weight percentage should have a suitable thickness so that it can perform the function of the transmission layer well.
  • the thickness of the gradient doped connection layer is set in the range of 20 nm to 120 nm, preferably 30 nm to 60 nm, more preferably 30 nm to 35 nm, in which the preferred thickness is
  • the gradient doped connection layer can well support the illumination unit to emit light without excessive thickness, so that the luminous efficiency of the device is lowered.
  • An embodiment of the present invention also provides a display device comprising the above laminated organic electroluminescent device or the above laminated organic electroluminescent device obtained according to the above manufacturing method.
  • the laminated organic electroluminescent device according to Example 1 includes a first light emitting unit 200 1 , a connecting layer 300 1 , and a second light emitting unit 400 1 which are sequentially laminated on a transparent glass substrate 100 with an ITO film. And cathode 500.
  • connection layer structure in the stacked organic electroluminescent device is an N-type gradient doped layer/P-type undoped layer, and the functional layer structures thereof are as shown in Table 1.
  • the ITO glass substrate is a transparent glass with an indium tin oxide film; the main material of the luminescent layer is selected from MAND, and the doped guest material is selected as DSA-Ph; the main material of the N-type gradient doped connection layer is selected as Bphen, and the guest material is doped. Select the metal Li.
  • the specific preparation process is as follows:
  • ITO pattern electrodes were formed by photolithography and etching; then the ITO glass substrate was sequentially ultrasonicated in deionized water, acetone, and absolute ethanol.
  • the functional layer in Table 1 is sequentially vapor-deposited on the ITO surface by vacuum thermal evaporation, wherein the doping guest in the light-emitting layer accounts for 3 wt% of the light-emitting layer, and the N-type gradient doped connection layer
  • the mass percentage of the doped guest is 0 on the lower bottom surface and 10 wt% on the upper surface (ie, the NP interface in the connection layer).
  • the evaporation rate of the host material and the doped guest material of the gradient doped layer is determined according to the metal mask of Al and the evaporation rate of 0.3 nm/s. The actual situation was set, and the remaining layers used an open mask and the evaporation rate was 0.1 nm/s.
  • the laminated organic electroluminescent device is a blue light device, and its light emitting area is 3 mm ⁇ 3 mm, the main peak of the light is located at 470 nm, the shoulder peak is at 496 nm, the working voltage is 18 V, and the current is luminous.
  • the rate was 25.9 cd/A.
  • the laminated organic electroluminescent device according to Example 2 includes a first light emitting unit 200 2 , a connecting layer 300 2 , and a second light emitting unit 400 2 which are sequentially laminated on a transparent glass substrate 100 with an ITO film. And cathode 500.
  • the first light emitting unit 200 2 includes a hole injection layer 201, a hole transport layer 202, a light emitting layer 203, and an electron transport layer 204 laminated on the substrate 100
  • the connection layer 300 2 includes a layered on the first light emitting unit 200 2 in this order.
  • the second light emitting unit 4002 includes a light-emitting layer are sequentially laminated on the connecting layer 3002 is 402, the electron transporting layer 403 and an electron buffer layer 404.
  • the upper sub-connection layer 302 2 is a gradient doped connection layer that directly contacts the luminescent layer 402.
  • the connection layer structure of the stacked organic electroluminescent device is an N-type uniformly doped layer/P-type gradient doped layer, and the functional layer structures thereof are as shown in Table 2.
  • the fabrication process of the device is referred to Example 1. .
  • the laminated organic electroluminescent device is a blue light device having a light-emitting area of 3 mm ⁇ 3 mm, a main peak of light emission at 470 nm, and a shoulder peak at 496 nm.
  • the laminated organic electroluminescent device according to Example 3 includes a first light emitting unit 200 3 , a connecting layer 300 3 , and a second light emitting unit 400 3 which are sequentially laminated on a transparent glass substrate 100 with an ITO film. And cathode 500.
  • the connection layer structure of the stacked organic electroluminescent device is an N-type gradient doped layer/P-type gradient doped layer, and the functional layer structures thereof are as shown in Table 3.
  • the fabrication process of the device is referred to Example 1. .
  • the laminated organic electroluminescent device is a blue light device having a light emitting area of 3 mm ⁇ 3 mm.
  • the main peak of the luminescence is at 470 nm and the shoulder is at 496 nm.
  • the laminated organic electroluminescent device manufactured by the prior art is provided.
  • the laminated organic electroluminescent device according to the comparative example comprises a layer of transparently laminated with an ITO film.
  • the first light emitting unit 200 3 includes a hole injection layer 201, a hole transport layer 202, a light emitting layer 203, and an electron transport layer 204 laminated on the substrate 100, and the connection layer 300 4 includes a layered on the first light emitting unit 200 4 in this order.
  • the second light-emitting unit 400 4 includes a hole transport layer 401, a light-emitting layer 402, an electron transport layer 403, and an electron buffer layer 404 which are sequentially stacked on the connection layer 300 4 , wherein
  • the lower sub-connection layer 301 4 is a uniformly doped connection layer
  • the upper sub-connection layer 302 4 is an undoped connection layer.
  • the functional layer structures of the laminated organic electroluminescent device according to the comparative example are shown in Table 4.
  • the laminated organic electroluminescent device is a blue light device having a light-emitting area of 3 mm ⁇ 3 mm, a main peak of light emission at 470 nm, and a shoulder peak at 496 nm.
  • the number of layers of the stacked organic electroluminescent device of Examples 1, 2, and 3 of the present invention was less than that of the comparative examples, and the luminous efficiencies were 24.5 cd/A and 25.9 cd/, respectively.
  • A, 27.3 cd/A, and the luminous efficiency of the comparative example was 18.3 cd/A, from which it can be concluded that the laminated organic light-emitting electrodevice provided by the present invention does improve the luminous efficiency.
  • the operating voltages of Examples 2 and 3 are 16V and 11V, respectively, which are smaller than the operating voltages of the prior art. Therefore, the laminated organic light-emitting device provided by the present invention can effectively reduce the operating voltage.
  • Example 3 has higher luminous efficiency and lower operating voltage with respect to Examples 1 and 2, mainly because the connecting layers in Examples 1 and 2 respectively contain only one.
  • the layer gradient is doped with the connection layer, and the two sub-connection layers in the example 3 are gradient dopant connection layers, which means that the preferred connection structure of the upper and lower sub-connection layers of the present invention is a gradient doped connection layer.
  • the laminated organic electroluminescent device has higher luminous efficiency.

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Abstract

一种叠层有机电致发光器件及其制作方法、以及包括叠层有机电致发光器件的显示装置，减少了叠层有机电致发光器件的层数，提高了发光效率。其中，叠层有机电致发光器件包括用于连接相邻两个发光单元（200 1、400 1）的连接层；其包括依次连接的下子连接层（301 2）和上子连接层（301 1），至少一层子连接层为梯度掺杂连接层。

Description

叠层有机电致发光器件及其制作方法和显示装置 技术领域
本发明的实施例一般地涉及发光器件领域，尤其涉及一种叠层有机电致发光器件及其制作方法、和包括该叠层有机电致发光器件的显示装置。
背景技术
有机电致发光器件(如，OLED)具有能耗低、驱动电压低、色域广、制备工艺简单、视角宽、响应快等特点，是近年来国际上的研究热点。
为了更好地实现有机电致发光器件的功能，研究人员在有机电致发光器件中叠加有多个发光单元，且在发光单元之间用连接层进行连接，以形成叠层有机电致发光器件，该器件具有电流密度较低的特点，从而可有效地避免过剩电流作用导致的热猝灭效应，提高有机电致发光器件的电流效率、亮度、寿命等。
然而，由于叠层有机电致发光器件中包括的功能层数较多，使得载流子在进入发光层的过程中需克服相对较大界面势垒，从而易于累积在各界面上。为了使载流子能够克服界面势垒，正常进入发光层以形成激子进而发光，则必须提高其驱动电压，但这就会出现叠层有机电致发光器件的发光效率降低的问题。为此，提供一种能够有效提高发光效率的叠层有机电致发光器件是本领域技术人员所面临的重要课题。
发明内容
本发明实施例提供了一种叠层有机电致发光器件及其制作方法以及显示装置，以减少叠层有机电致发光器件的层数，提高其发光效率。
在本发明的一个方面中，提供了一种叠层有机电致发光器件，包括层叠的至少两个发光单元、和用于连接相邻两个发光单元的连接层，每 个发光单元包括发光层，所述连接层包括依次层叠连接的下子连接层和上子连接层，其中，至少一个子连接层为直接接触邻近的发光层的梯度掺杂连接层。
在上述叠层有机电致发光器件中，所述梯度掺杂连接层可以由主体和掺杂客体构成，所述掺杂客体的质量百分比在所述梯度掺杂连接层的接触所述发光层的一侧为0，并向所述梯度掺杂连接层的未接触所述发光层的另一侧递增，且在未接触所述发光层的所述另一侧达到最大值。
在上述叠层有机电致发光器件中，当所述掺杂客体为金属时，所述最大值的上限可以为30wt％；当所述掺杂客体为金属化合物时，所述最大值的上限可以为50wt％；当所述掺杂客体为有机物时，所述最大值的上限可以为80wt％。
在上述叠层有机电致发光器件中，所述金属可以选自锂、钾、铷、铯、镁、钙和钠中的至少一种；所述金属化合物可以选自三氧化钼、五氧化二钒、三氧化钨、碳酸铯、氟化锂、碳酸锂、氯化钠、氯化铁和四氧化三铁中的至少一种；所述有机物可以选自C60、并五苯、F4-TCNQ和酞箐类衍生物中的至少一种。
在上述叠层有机电致发光器件中，在所述上子连接层为N型梯度掺杂层时，所述下子连接层可以为P型梯度掺杂层、P型均匀掺杂层和P型非掺杂层中的任意一种；在所述上子连接层为P型梯度掺杂层时，所述下子连接层可以为N型均匀掺杂层、N型非掺杂层和N型梯度掺杂层中的任意一种。
在上述叠层有机电致发光器件中，下子连接层和上子连接层中可以仅一个子连接层为梯度掺杂连接层，并且与另一个子连接层邻近的发光单元可以包括与该另一个子连接层接触的载流子传输层。
在上述叠层有机电致发光器件中，梯度掺杂连接层的厚度可以为20nm～120nm。
在本发明的另一个方面中，提供了一种叠层有机电致发光器件的制作方法，包括下述步骤：
形成包括第一发光层的第一发光单元；
在第一发光单元上依次形成下子连接层和上子连接层；以及
在上子连接层上形成包括第二发光层的第二发光单元，
其中下子连接层和上子连接层中的至少一个形成为直接接触邻近的发光层的梯度掺杂连接层。
在上述制作方法中，所述梯度掺杂连接层可以由主体和掺杂客体构成，所述掺杂客体被形成使得它的质量百分比在所述梯度掺杂连接层的接触所述邻近的发光层的一侧为0，并向所述梯度掺杂连接层的未接触所述邻近的发光层的另一侧递增，且在未接触所述邻近的发光层的所述另一侧具有最大值。
在上述制作方法中，当所述下子连接层为梯度掺杂连接层时，在形成该梯度掺杂连接层时，可以通过保持所述主体的蒸发速率不变并均匀提高所述掺杂客体的蒸发速率，或者可以通过保持掺杂客体材料的蒸发速率为设定值并均匀降低主体材料的蒸发速率，或者可以在掺杂客体材料的蒸发速率提高的同时均匀降低主体材料的蒸发速率，使所述掺杂客体的质量百分比随所述下子连接层厚度的增加而均匀提高，直至所述掺杂客体的质量百分比达到最大值。
在上述制作方法中，当所述上子连接层为梯度掺杂连接层时，在形成该梯度掺杂连接层时，可以通过保持所述主体的蒸发速率不变并均匀降低所述掺杂客体的蒸发速率，或者可以通过保持掺杂客体材料的蒸发速率为设定值并均匀提高主体材料的蒸发速率，或者可以在掺杂客体材料的蒸发速率均匀降低的同时均匀提高主体材料的蒸发速率，使所述掺杂客体的质量百分比随所述上子连接层厚度的增加而由最大值开始均匀降低，直至所述掺杂客体的质量百分比降至0为止。
在上述制作方法中，当所述掺杂客体为金属时，所述最大值的上限可以为30wt％；当所述掺杂客体为金属化合物时，所述最大值的上限可以为50wt％；当所述掺杂客体为有机物时，所述最大值的上限可以为80wt％。
在上述制作方法中，可以利用选自真空蒸镀、旋涂、有机蒸汽喷印、有机气相沉积、丝网印刷以及喷墨打印中的任意一种方法在所述第一发光单元上依次沉积所述下子连接层和所述上子连接层。
在上述制作方法中，所述掺杂客体的蒸发速率的范围可以为0～0.4nm/s。
在上述制作方法中，所述梯度掺杂连接层的厚度可以为20nm～120 nm。
在本发明的又一个方面中，提供了一种显示装置，包括前述叠层有机电致发光器件或根据前述制作方法获得的叠层有机电致发光器件。
本发明实施例提供了一种叠层有机电致发光器件及其制作方法、以及包括该叠层有机电致发光器件的显示装置，在该叠层有机电致发光器件中，将连接层中的至少一个子连接层设置为梯度掺杂连接层，由于梯度掺杂连接层能够代替注入层和传输层以辅助载流子的注入和传输，使得在本发明所提供的叠层有机电致发光器件中，不需在发光层和梯度掺杂连接层之间设置注入层和传输层，从而能够减少叠层有机电致发光器件中所包含的功能层数，降低叠层有机电致发光器件的所需的驱动电压，进而提高其发光效率。
附图说明
通过参考附图能够更加清楚地理解本发明的特征和优点，附图是示意性的而不应理解为对本发明进行任何限制。图示中的组成元件并不一定符合比例，而系以强调的方式描绘出本发明的原理。在图示中，相同的附图标记在不同图示中标出相同或对应的部分。在附图中：
图1是根据本发明的示例1提供的叠层有机电致发光器件的结构示意图；
图2是根据本发明的示例2提供的叠层有机电致发光器件的结构示意图；
图3是根据本发明的示例3提供的叠层有机电致发光器件的结构示意图；以及
图4是根据对比例提供的叠层有机电致发光器件的结构示意图。
具体实施方式
下面将对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明的实施例提供了一种叠层有机电致发光器件，包括层叠的至 少两个发光单元、和用于连接相邻两个发光单元的连接层，每个发光单元包括发光层；所述连接层包括依次层叠连接的下子连接层和上子连接层，其中，至少一个子连接层为直接接触它邻近的发光层的梯度掺杂连接层。
目前，叠层有机电致发光器件中的每个发光单元都包括有传输层和注入层，此外，为了避免激子淬灭而导致发光效率降低的问题，通常还会在传输层与发光单元之间插入电荷缓冲层，使得器件所包含的功能层数大大增加。但功能层数的增加无疑会导致器件内各层间界面势垒升高，进而导致器件的工作电压升高，影响叠层有机电致发光器件的发光效率。所以，为了减少叠层有机电致发光器件所包含的层数，降低其所需的工作电压，提高其发光效率，本发明的实施例将连接层中的至少一个子连接层设置为梯度掺杂连接层。本发明实施例中所设置的梯度掺杂连接层可以具有与现有技术传输层材料相同的主体材料，能够较好地实现载流子的传输；并且，梯度掺杂连接层中的各组分质量百分比是随其厚度增加而均匀变化，并不存在突变，还可有效地降低各层间的界面势垒。
本发明实施例提供了一种叠层有机电致发光器件，在该叠层有机电致发光器件中，将连接层中的至少一个子连接层设置为梯度掺杂连接层，由于梯度掺杂连接层能够代替注入层和传输层以辅助载流子的注入和传输，使得在本发明所提供的叠层有机发光器件中，不需在发光层和梯度掺杂连接层之间设置注入层和传输层，从而能够减少叠层有机电致发光器件中所包含的功能层数，降低叠层有机电致发光器件的所需的驱动电压，进而提高其发光效率。
在本发明的一实施例中，所述梯度掺杂连接层由主体和掺杂客体构成，其中，所述掺杂客体的质量百分比在所述梯度掺杂连接层中接触所述发光层的一侧为0，并向所述梯度掺杂连接层的未接触所述发光层的另一侧递增，最终在未接触所述发光层的所述另一侧达到最大值。
为了更好地进行载流子的传输，将梯度掺杂连接层中的掺杂客体的质量百分比在接触发光层的一侧设置为0，而使其在未接触所述发光层的另一侧(连接层中上子连接层与下子连接层的交界处)设置达到最大值，其用意在于将梯度掺杂连接层中掺杂客体的质量百分比在接近发光单元的一侧设置的相对较低，使其能够更好地完成载流子的传输，而在 远离发光单元的一侧设置的相对较高，使其能够更好地完成载流子的注入。所以，由本实施例提供的梯度掺杂连接层能够更好地取代注入层和传输层，以减少叠层有机电致发光器件所包含的功能层数，从而降低其所需的工作电压，提高其发光效率。
在本发明的另一实施例中，当所述掺杂客体为金属时，所述最大值的上限为约30wt％；当所述掺杂客体为金属化合物时，所述最大值的上限为约50wt％；当所述掺杂客体为有机物时，所述最大值的上限为约80wt％。
由本实施例提供的掺杂客体在连接层中主要起到提供载流子的作用，由于掺杂客体(如某些金属)随着时间延长会在有机主体中扩散，导致器件寿命下降，因此需要使掺杂客体在梯度掺杂连接层中所占的质量百分比保持在一个合理的范围内，以避免掺杂客体的质量百分比因过低或过高而发生的不良现象。
由于金属内部的自由电子较多，具有良好的电子传输特性(即高电子迁移率)、良好的电子亲和能以及较高的电离能，所以其易于向发光层中注入电子，且能够良好地阻挡空穴的注入，因此一般用作N型掺杂层的掺杂客体；而有机物具有良好的空穴传输特性(即高空穴迁移率)、较低的电子亲和能，易于向发光层中注入空穴，且能够良好地阻挡电子的注入，所以一般用作P型掺杂层的掺杂客体；金属氧化物载流子注入特性则介于两者之间，本领域技术人员可以根据实际情况选择合适的掺杂客体。
这里需要说明的是，由于金属掺杂客体的导电性较强、提供载流子的能力较高，化学性质较为活泼，所以其所占的质量百分比的上限相对较低，约在30wt％左右；相比之下，有机物掺杂客体的导电性较弱、提供载流子的能力也相对较弱，所以其所占的质量百分比的上限相对较高，约在80wt％左右；而金属氧化物掺杂客体则介于二者之间，所以其所占的质量百分比的上限通常约在50wt％左右。根据所选用的掺杂客体选择合适的质量百分比范围，能够有效地使梯度掺杂连接层既能够向发光层提供足够的载流子，且导电性适中，又能够避免连接层的变质。
在本发明的又一实施例中，所述金属选自锂、钾、铷、铯、镁、钙和钠中的至少一种；所述金属化合物选自三氧化钼、五氧化二钒、三氧 化钨、碳酸铯、氟化锂、碳酸锂、氯化钠、氯化铁和四氧化三铁中的至少一种；所述有机物选自C60、并五苯、F4-TCNQ(2，3，5，6-四氟-7，7′，8，8′-四氰二甲基对苯醌)和酞箐类衍生物中的至少一种。
上述内容已经提到，梯度掺杂连接层基本可以完成载流子的传输，为了使载流子更顺利地注入发光层，还需要选择合适的掺杂客体。本发明实施例中所提供的掺杂客体具有良好的成膜性和热稳定性，且不易结晶，从而最终能够形成质地均一致密的膜层。可以理解的是，梯度掺杂连接层中所使用的掺杂客体并不仅局限于上述材料，上述材料仅为可作为掺杂客体的优选例子，本领域技术人员还可根据掺杂客体所具有的特点在更广泛的范围内选择适宜材料。
在本发明的又一实施例中，在所述上子连接层为N型梯度掺杂层时，所述下子连接层可以为P型梯度掺杂层、P型均匀掺杂层和P型非掺杂层中的任意一种；在所述上子连接层为P型梯度掺杂层时，所述下子连接层为N型均匀掺杂层、N型非掺杂层和N型梯度掺杂层中的任意一种。
本领域技术人员可以根据实际情况从上述六种结构中选择最合适的方案。其中，优选结构为N型梯度掺杂层和P型梯度掺杂层的组合，如上述内容所提到的，由于梯度掺杂连接层可以代替注入层和传输层对载流子进行注入和传输(N型梯度掺杂层对电子载流子进行注入和传输；P型梯度掺杂层对空穴载流子进行注入和传输)，因此，为了更大程度地减少叠层有机电致发光器件中包含的功能层数，将连接层中的上下两子连接层均设置为梯度掺杂连接层，以最大限度地提高发光效率。
需要说明的是，在连接层和发光单元之间还可设置传输层，由于传输层可以更好地进行载流子的传输，因此设置传输层有利于提高叠层有机电致发光器件的发光能力。另一方面，虽然设置传输层会在一定程度上提高器件的发光能力，但不可忽视的是其也会对发光效率产生一定影响，所以，本领域技术人员需要根据实际情况作出判断，以选择是否在连接层两侧合理地设置电子传输层和/或空穴传输层。
可以理解的是，本发明实施例提供的连接层用于连接叠层有机电致发光器件中的相邻发光单元，根据发光单元的数量，单个叠层有机电致发光器件可包括有多个上述连接层，以更好地减少叠层有机电致发光器件所包含的层数，提高发光效率。需要说明的是，本发明的发光单元的 发光颜色可为红色、绿色以及蓝色，且各发光单元中的发光层可为掺杂层或非掺杂层，本领域技术人员可根据实际需要选择合适的发光单元制备叠层有机电致发光器件。
本发明实施例还提供了一种由上述实施例提供的叠层有机电致发光器件的制作方法，包括：形成包括第一发光层的第一发光单元；在第一发光单元上依次形成下子连接层和上子连接层；以及在上子连接层上形成包括第二发光层的第二发光单元，其中下子连接层和上子连接层中的至少一个形成为直接接触邻近的发光层的梯度掺杂连接层。
根据本发明的示例性实施例，在制作梯度掺杂连接层的过程中，可以通过控制梯度掺杂连接层的主体和掺杂客体的蒸发速率，以调节主体和掺杂客体在梯度掺杂连接层中所占的质量百分比，从而能够在不引入新设备的前提下制作梯度掺杂连接层，进而降低本发明所提供的叠层有机电致发光器件的制作成本以及制作难度。
在一个示例中，当所述下子连接层为梯度掺杂连接层时，可以通过保持所述主体的蒸发速率不变、均匀或逐渐地提高所述掺杂客体的蒸发速率，使所述掺杂客体的质量百分比随所述下子连接层厚度的增加而均匀提高，直至所述掺杂客体的质量百分比达到最大值；当所述上子连接层为梯度掺杂连接层时，可以通过保持所述主体的蒸发速率不变、均匀或逐渐地降低所述掺杂客体的蒸发速率，使所述掺杂客体的质量百分比随所述上子连接层厚度的增加而由最大值开始均匀降低，直至所述掺杂客体的质量百分比降至0为止。
在本发明实施例中，通过对主体材料和掺杂客体材料同时蒸发并沉积的方法，以实现在膜层中掺杂的目的。由于梯度掺杂连接层中主体材料和掺杂客体材料的质量百分比取决于其蒸汽沉积速率，而主体材料和掺杂客体材料蒸汽沉积速率又取决于其蒸发速率，所以本发明实施例通过均匀或逐渐地改变掺杂客体材料的蒸发速率，使掺杂客体的质量百分比随着厚度的增加均匀变化的方法，以制造梯度掺杂连接层。
具体来说，当下子连接层为梯度掺杂连接层时，由于其下底面与发光层相接触，所以掺杂客体的质量百分比在下底面为0，而在上表面(即连接层中上下两子连接层的交界处)达到最大。在制备时，首先使主体材料以及掺杂客体材料预热，主体材料的蒸发速率达到设定值并保持不 变时，使掺杂客体材料加热开始蒸发，并在主体材料开始沉积的同时，从0开始均匀提高掺杂客体材料的蒸发速率，与主体材料一同开始沉积，直至掺杂客体材料的蒸发速率达到预先设定的最大值。
可以理解的是，在是梯度掺杂连接层的下子连接层的制备过程中，也可以使掺杂客体材料的蒸发速率保持为设定值，均匀降低主体材料的蒸发速率；或在掺杂客体材料的蒸发速率提高的同时，均匀降低主体材料的蒸发速率，以使掺杂客体的质量百分比随着下子连接层厚度的增加而均匀增加。本领域技术人员可以根据实际设备以及工艺条件选择较合适的速率控制模式，需要说明的是，各材料的蒸发速率是由其温度决定的，因此，本领域技术人员可以通过控制各材料的温度来控制其蒸发速率。
与下子连接层相对地，当上子连接层为梯度掺杂连接层时，上子连接层的掺杂客体的质量百分比在下底面(即两子连接层的交界处)为最大值，并从下底面向上表面均匀降低，在上表面降低至0。因此在制备是梯度掺杂连接层的上子连接层时，可以使掺杂客体材料和主体材料预热，在各自达到预先设定的蒸发速率后，同时开始沉积，并在开始沉积的同时使掺杂客体材料的蒸发速率由设定的最大值开始均匀降低，直至降至0为止，以使上子连接层中掺杂客体的质量百分比随着上子连接层厚度的增加而均匀降低。
可以理解的是，在是梯度掺杂连接层的上子连接层的制备过程中，也可以使掺杂客体材料的蒸发速率不变，均匀提高主体材料的蒸发速率；或在掺杂客体材料的蒸发速率均匀降低的同时，均匀提高主体材料的蒸发速率，以使掺杂客体的质量百分比随着上子连接层的厚度的增加而均匀降低，其原理在上述下子连接层的制备中已提及，此处不再赘述。
在本发明的再一实施例中，当所述掺杂客体为金属时，所述最大值的上限为约30wt％；当所述掺杂客体为金属化合物时，所述最大值的上限为约50wt％；当所述掺杂客体为有机物时，所述最大值的上限为约80wt％。关于不同的掺杂客体对于梯度掺杂连接层的功能的影响，以及各种掺杂客体的质量百分比的设置原理，上述内容已经提及，此处不再赘述。需要说明的是，由于在制作梯度掺杂连接层的过程中，各材料的 质量百分比取决于各自的蒸发速率，而蒸发速率又对应于材料的温度，所以需要根据材料特性、设备、环境等因素来设置材料的温度值，以使梯度掺杂连接层中的掺杂客体的质量百分比范围符合器件的要求。
在本发明的又一实施例中，利用选自真空蒸镀、旋涂、有机蒸汽喷印、有机气相沉积、丝网印刷以及喷墨打印中的任意一种方法在发光单元上依次沉积所述下子连接层和所述上子连接层。目前发光器件的制膜方法多种多样，并各自具有不同的优点和缺点：如旋涂工艺简单易于操作，但对于材料的利用率不高；有机气相沉积工艺所制造的膜层纯度较高，但成本也相对较高等。而在本发明的实施例中，优选真空蒸镀工艺来制备梯度掺杂连接层，真空蒸镀工艺是将待成膜的物质置于真空中进行蒸发或升华，使之在工件或基片表面析出的一种工艺，其优势在于成膜质量均匀致密，成膜速度较快，且不需要改进现有蒸镀设备就能够完成本发明中的梯度掺杂连接层的制造，可以很好地降低连接层的制造成本。可以理解的是，在发光单元上依次沉积下子连接层和上子连接层的方法并不仅局限于上述方法，本领域技术人员可以根据实际情况选择其它方法。
在本发明的又一实施例中，所述掺杂客体的蒸发速率的范围为0～0.4nm/s。由于掺杂客体的蒸发速率对梯度掺杂连接层的成型有着较大的影响，蒸发速率过慢会导致梯度掺杂连接层成型较慢，而过快又会导致梯度掺杂连接层中各组分的质量百分比不易控制，因此本发明的实施例掺杂客体的蒸发速率在0～0.4nm/s范围内，其中优选蒸发速率为0.3nm/s，该优选值能够在蒸镀设备所允许的范围内，高效率地制造高性能的梯度掺杂连接层。
在本发明的又一实施例中，所述梯度掺杂连接层的厚度为20nm～120nm。由于梯度掺杂连接层与传统的连接层的作用效果不同，其需同时完成现有技术中的传输层和注入层的功能，因此其必须保证一定的厚度，以使掺杂客体的质量百分比有着足够的调整空间，以能够良好地完成注入层的功能；进一步，还应使掺杂客体的重量百分较低的部分具有合适的厚度，以使其能够良好地完成传输层的功能。因此在本发明的实施例中，将梯度掺杂连接层的厚度设置在20nm～120nm范围内，优选厚度为30nm～60nm，更优选厚度为30nm～35nm，在该优选厚度范 围内能够使梯度掺杂连接层既良好地支持发光单元发光，又不致因过厚而使器件的发光效率降低。
本发明的实施例还提供了一种显示装置，其包括上述叠层有机电致发光器件或根据上述制作方法获得的上述叠层有机电致发光器件。
为了更好地说明本发明的示例性实施例提供的叠层有机电致发光器件及其制造方法，下面以具体的示例进行详细说明。
示例1
如图1所示，根据示例1的叠层有机电致发光器件包括依次层叠在带有ITO膜的透明玻璃基底100上的第一发光单元2001、连接层3001、第二发光单元4001和阴极500。第一发光单元2001包括层叠在基底100上的空穴注入层201、空穴传输层202和发光层203，连接层3001包括依次层叠在第一发光单元2001上的下子连接层3011和上子连接层3022，其中下子连接层3011是直接接触发光层203的梯度掺杂连接层，第二发光单元4001包括依次层叠在连接层3001上的空穴传输层401、发光层402、电子传输层403和电子缓冲层404。在本示例中，叠层有机电致发光器件中的连接层结构为N型梯度掺杂层/P型非掺杂层，其各功能层结构如表1所示。
表1.示例1的叠层结构
Figure PCTCN2015073104-appb-000001
其中，ITO玻璃基底为带有氧化铟锡薄膜的透明玻璃；发光层的主体材料选择MAND，掺杂客体材料选择DSA-Ph；N型梯度掺杂连接层的主体材料选择Bphen，掺杂客体材料选择金属Li。具体制备过程如下：
在带有ITO(其面电阻＜30Ω/□)的透明玻璃基底上，通过光刻、刻蚀形成ITO图案电极；然后将ITO玻璃基底依次在去离子水、丙酮、和无水乙醇中进行超声清洗；超声清洗结束后用N2吹干并进行O2等离子体的处理；将处理完毕后的基底置于蒸镀腔室中，调节蒸镀腔室内的气压至低于5×10-4Pa后，通过真空热蒸镀的方式，在ITO面依次蒸镀表1中的功能层，其中，发光层中的掺杂客体占发光层的质量百分比为3wt％，N型梯度掺杂连接层中，掺杂客体的质量百分比在下底面为0，在上表面(即连接层中的NP界面)为10wt％。需要说明的是，在上述蒸镀过程中，除Al使用金属阴极掩膜版(metal mask)且蒸发速率为0.3nm/s外，梯度掺杂层的主体材料和掺杂客体材料的蒸发速率根据实际情况设置，其余各层均使用开放掩膜版(open mask)且蒸发速率为0.1nm/s。
该叠层有机电致发光器件为蓝光器件，其发光面积为3mm×3mm，发光主峰位于470nm，肩峰位于496nm，工作电压为18V，电流发光效 率为25.9cd/A。
示例2
如图2所示，根据示例2的叠层有机电致发光器件包括依次层叠在带有ITO膜的透明玻璃基底100上的第一发光单元2002、连接层3002、第二发光单元4002和阴极500。第一发光单元2002包括层叠在基底100上的空穴注入层201、空穴传输层202、发光层203和电子传输层204，连接层3002包括依次层叠在第一发光单元2002上的下子连接层3012和上子连接层3022，第二发光单元4002包括依次层叠在连接层3002上的发光层402、电子传输层403和电子缓冲层404。其中上子连接层3022是直接接触发光层402的梯度掺杂连接层。在本示例中，叠层有机电致发光器件的连接层结构为N型均匀掺杂层/P型梯度掺杂层，其各功能层结构如表2所示，该器件的制作工艺参照示例1。
表2.示例2的叠层结构
Figure PCTCN2015073104-appb-000002
该叠层有机电致发光器件为蓝光器件，其发光面积为3mm×3mm，发光主峰位于470nm，肩峰位于496nm。
示例3
如图3所示，根据示例3的叠层有机电致发光器件包括依次层叠在带有ITO膜的透明玻璃基底100上的第一发光单元2003、连接层3003、第二发光单元4003和阴极500。第一发光单元2003包括层叠在基底100上的空穴注入层201、空穴传输层202和发光层203，连接层3003包括依次层叠在第一发光单元2003上的下子连接层3013和上子连接层3023，第二发光单元4003包括依次层叠在连接层3003上的发光层402、电子传输层403和电子缓冲层404，其中下子连接层3013是直接接触发光层203的梯度掺杂连接层，上子连接层3023是直接接触发光层402的梯度掺杂连接层。在本示例中，叠层有机电致发光器件的连接层结构为N型梯度掺杂层/P型梯度掺杂层，其各功能层结构如表3所示，该器件的制作工艺参照示例1。
表3.示例3的叠层结构
Figure PCTCN2015073104-appb-000003
该叠层有机电致发光器件为蓝光器件，其发光面积为3mm×3mm，。发光主峰位于470nm，肩峰位于496nm。
对比例
对比上述三个示例，提供了一个利用现有技术制造的叠层有机电致 发光器件，如图4所示，根据对比例的叠层有机电致发光器件包括依次层叠在带有ITO膜的透明玻璃基底100上的第一发光单元2004、连接层3004、第二发光单元4004和阴极500。第一发光单元2003包括层叠在基底100上的空穴注入层201、空穴传输层202、发光层203和电子传输层204，连接层3004包括依次层叠在第一发光单元2004上的下子连接层3014和上子连接层3024，第二发光单元4004包括依次层叠在连接层3004上的空穴传输层401、发光层402、电子传输层403和电子缓冲层404，其中下子连接层3014是均匀掺杂连接层，上子连接层3024是非掺杂连接层。根据对比例的叠层有机电致发光器件的各功能层结构如表4所示。
表4.对比例的叠层结构
Figure PCTCN2015073104-appb-000004
该叠层有机电致发光器件为蓝光器件，其发光面积为3mm×3mm，发光主峰位于470nm，肩峰位于496nm。
将上述三个示例与对比例进行比较，在电流密度均为2mA/cm2的条 件下进行发光效率测试，可以得到表5所述的结果：
表5.本发明示例与对比例的对比结果表
器件 功能层数 工作电压(V) 发光效率(cd/A)
示例1 11 18 24.5
示例2 11 16 25.9
示例3 10 11 27.3
对比例 12 18 18.5
由表5可知，在相同的电流密度下，本发明的示例1、2、3的叠层有机电致发光器件的层数少于对比例，其发光效率分别为24.5cd/A、25.9cd/A、27.3cd/A，而对比例的发光效率为18.3cd/A，由此可以得出，本发明所提供的叠层有机发光电致器件确实提高了发光效率。从工作电压来看，示例2和3的工作电压分别为16V、11V，均小于现有技术的工作电压，因此本发明所提供的叠层有机发光电致器件可有效降低工作电压，
对比示例1、2、3可以发现，示例3相对于示例1和2而言，具有较高的发光效率和较低的工作电压，这主要是因为示例1和2中的连接层分别只包含一层梯度掺杂连接层，而示例3中的两子连接层均为梯度掺杂子连接层，这说明本发明所优选的上下两子连接层均为梯度掺杂连接层的连接层结构确实能使叠层有机电致发光器件有着更高的发光效率。
显然，上述实施例仅仅是为清楚地说明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本发明创造的保护范围。

Claims (16)

  1. 一种叠层有机电致发光器件，包括层叠的至少两个发光单元、和用于连接相邻两个发光单元的连接层，每个发光单元包括发光层；
    所述连接层包括依次层叠连接的下子连接层和上子连接层，其中，至少一个子连接层为直接接触邻近的发光层的梯度掺杂连接层。
  2. 根据权利要求1所述的叠层有机电致发光器件，其中，
    所述梯度掺杂连接层由主体和掺杂客体构成，其中，所述掺杂客体的质量百分比在所述梯度掺杂连接层的接触所述发光层的一侧为0，并向所述梯度掺杂连接层的未接触所述发光层的另一侧递增，且在未接触所述发光层的所述另一侧达到最大值。
  3. 根据权利要求2所述的叠层有机电致发光器件，其中，
    当所述掺杂客体为金属时，所述最大值的上限为30wt％；
    当所述掺杂客体为金属化合物时，所述最大值的上限为50wt％；
    当所述掺杂客体为有机物时，所述最大值的上限为80wt％。
  4. 根据权利要求3所述的叠层有机电致发光器件，其中，
    所述金属选自锂、钾、铷、铯、镁、钙和钠中的至少一种；
    所述金属化合物选自三氧化钼、五氧化二钒、三氧化钨、碳酸铯、氟化锂、碳酸锂、氯化钠、氯化铁和四氧化三铁中的至少一种；
    所述有机物选自C60、并五苯、F4-TCNQ和酞箐类衍生物中的至少一种。
  5. 根据权利要求1-4中任一项所述的叠层有机电致发光器件，其中，
    在所述上子连接层为N型梯度掺杂层时，所述下子连接层为P型梯度掺杂层、P型均匀掺杂层和P型非掺杂层中的任意一种；
    在所述上子连接层为P型梯度掺杂层时，所述下子连接层为N型均匀掺杂层、N型非掺杂层和N型梯度掺杂层中的任意一种。
  6. 根据权利要求1-4中任一项所述的叠层有机电致发光器件，其中 下子连接层和上子连接层中仅一个子连接层为梯度掺杂连接层，并且与另一个子连接层邻近的发光单元包括与该另一个子连接层接触的载流子传输层。
  7. 根据权利要求1-4中任一项所述的叠层有机电致发光器件，其中所述梯度掺杂连接层的厚度为20nm～120nm。
  8. 一种叠层有机电致发光器件的制作方法，包括下述步骤：
    形成包括第一发光层的第一发光单元；
    在第一发光单元上依次形成下子连接层和上子连接层；以及
    在上子连接层上形成包括第二发光层的第二发光单元，
    其中下子连接层和上子连接层中的至少一个形成为直接接触邻近的发光层的梯度掺杂连接层。
  9. 根据权利要求8所述的制作方法，其中
    所述梯度掺杂连接层由主体和掺杂客体构成，所述掺杂客体被形成使得它的质量百分比在所述梯度掺杂连接层的接触所述邻近的发光层的一侧为0，并向所述梯度掺杂连接层的未接触所述邻近的发光层的另一侧递增，且在未接触所述邻近的发光层的所述另一侧具有最大值。
  10. 根据权利要求9所述的制作方法，其中
    当所述下子连接层为梯度掺杂连接层时，
    在形成该梯度掺杂连接层时，通过保持所述主体的蒸发速率不变并均匀提高所述掺杂客体的蒸发速率，或者通过保持掺杂客体材料的蒸发速率为设定值并均匀降低主体材料的蒸发速率，或者在掺杂客体材料的蒸发速率提高的同时均匀降低主体材料的蒸发速率，使所述掺杂客体的质量百分比随所述下子连接层厚度的增加而均匀提高，直至所述掺杂客体的质量百分比达到最大值。
  11. 根据权利要求9所述的制作方法，其中当所述上子连接层为梯度掺杂连接层时，
    在形成该梯度掺杂连接层时，通过保持所述主体的蒸发速率不变并 均匀降低所述掺杂客体的蒸发速率，或者通过保持掺杂客体材料的蒸发速率为设定值并均匀提高主体材料的蒸发速率，或者在掺杂客体材料的蒸发速率均匀降低的同时均匀提高主体材料的蒸发速率，使所述掺杂客体的质量百分比随所述上子连接层厚度的增加而由最大值开始均匀降低，直至所述掺杂客体的质量百分比降至0为止。
  12. 根据权利要求8-11中任一项所述的制作方法，其中，
    当所述掺杂客体为金属时，所述最大值的上限为30wt％；
    当所述掺杂客体为金属化合物时，所述最大值的上限为50wt％；
    当所述掺杂客体为有机物时，所述最大值的上限为80wt％。
  13. 根据权利要求8-11中任一项所述的制作方法，其中，利用选自真空蒸镀、旋涂、有机蒸汽喷印、有机气相沉积、丝网印刷以及喷墨打印中的任意一种方法在所述第一发光单元上依次沉积所述下子连接层和所述上子连接层。
  14. 根据权利要求10或11所述的制作方法，其中，所述掺杂客体的蒸发速率的范围为0～0.4nm/s。
  15. 根据权利要求8-11中任一项所述的制作方法，其特征在于，所述梯度掺杂连接层的厚度为20nm～120nm。
  16. 一种显示装置，包括权利要求1-7中任一项所述的叠层有机电致发光器件或根据权利要求8-15中任一项所述的制作方法获得的叠层有机电致发光器件。
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CN103794730A (zh) * 2012-10-31 2014-05-14 乐金显示有限公司 发光装置及包括其的有机发光显示装置
CN104253235A (zh) * 2013-06-28 2014-12-31 乐金显示有限公司 有机发光器件

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EP3301734A1 (en) * 2016-09-30 2018-04-04 LG Display Co., Ltd. Organic light-emitting device and organic light-emitting display device using the same
US10014357B2 (en) 2016-09-30 2018-07-03 Lg Display Co., Ltd. Organic light-emitting device and organic light-emitting display device using the same
KR102722453B1 (ko) * 2016-09-30 2024-10-25 엘지디스플레이 주식회사 유기 발광 소자 및 이를 이용한 유기 발광 표시 장치

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