WO2016080252A1 - Laser à semi-conducteur du type à résonateur externe - Google Patents

Laser à semi-conducteur du type à résonateur externe Download PDF

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Publication number
WO2016080252A1
WO2016080252A1 PCT/JP2015/081674 JP2015081674W WO2016080252A1 WO 2016080252 A1 WO2016080252 A1 WO 2016080252A1 JP 2015081674 W JP2015081674 W JP 2015081674W WO 2016080252 A1 WO2016080252 A1 WO 2016080252A1
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semiconductor laser
external
laser
optical system
chip
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PCT/JP2015/081674
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English (en)
Japanese (ja)
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太田　猛史
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カナレ電気株式会社
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Definitions

  • the present invention relates to a semiconductor laser, and more particularly to a semiconductor laser capable of generating high-power laser light.
  • the present invention relates to an external resonator type semiconductor laser.
  • the present invention relates to a solid-state laser.
  • the present invention relates to transverse mode control.
  • Patent Document 1 discloses a method of performing single transverse mode oscillation by providing a lens and an aperture in a solid-state laser resonator using a rod-shaped YAG crystal to limit the optical path.
  • Patent Document 2 discloses a technique of forming an external resonator type semiconductor laser using a semiconductor laser array, a lens, and a fiber Bragg grating filter, and generating a multimode laser beam.
  • Patent Document 3 discloses an external resonator type semiconductor laser in which a wide stripe semiconductor laser (broad area type semiconductor laser) and a single mode waveguide are coupled via a mode converter using a prism. Further, an external resonator type semiconductor laser in which a wide stripe semiconductor laser (broad area type semiconductor laser) and a fiber grating are coupled via a tapered waveguide is disclosed.
  • Patent Document 4 discloses an external resonator type semiconductor laser in which a semiconductor laser array and an optical path conversion element are combined.
  • Patent Document 5 discloses an external resonator type semiconductor laser in which a semiconductor laser array and an inclined reflecting mirror are combined.
  • Japanese Patent Laid-Open No. 3-102887 JP 2004-71694 A Japanese Patent No. 4271704 Japanese Patent No. 4002286 Japanese Patent No. 4024270
  • the purpose is to realize a compact laser oscillator by reducing the size of the resonator when unitizing the transverse mode or lowering the mode.
  • an external cavity semiconductor laser of the present invention is an external cavity semiconductor laser including a semiconductor laser chip and an external optical system
  • the semiconductor laser chip is a broad area semiconductor laser.
  • In the in-plane direction of this broad area semiconductor laser there is an optical confinement function in which the transverse mode becomes a multimode optical waveguide, and in the direction perpendicular to the substrate, an optical confinement function in which the transverse mode becomes a single mode.
  • high reflectivity coating is applied to the first end face
  • non-reflective coating is applied to the second end face
  • the second end face is optically coupled to the external optical system
  • a semiconductor is incorporated in the external optical system.
  • a spatial filter that restricts the optical path in the direction of the substrate surface of the laser chip is provided.
  • the laser of the present invention is suitable for applications where a laser with a high output and a transverse mode controlled is required.
  • a processing laser light source a processing laser pumping light source, a rare earth-doped optical fiber amplifier pumping light source, and a Raman optical amplifier pumping light source.
  • FIG. 1 is a schematic diagram showing a configuration of an external resonator type semiconductor laser 10 according to a first embodiment of the present invention. It is the schematic which shows the structure of the external resonator type semiconductor laser 20 of the 2nd Example of this invention. It is the schematic which shows the structure of the thin film solid-state laser 40 of the 3rd Example of this invention. It is the schematic which shows the structure of the external resonator type semiconductor laser 50 of 4th Example of this invention. It is the schematic which shows the structure of the external resonator type semiconductor laser 60 of 5th Example of this invention. It is the schematic which shows the structure of the thin film solid-state laser 70 of the 6th Example of this invention. It is the schematic which shows the structure of the solid state laser 80 of 7th Example of this invention.
  • FIG. 1 shows a configuration of an external resonator type semiconductor laser 10 according to a first embodiment of the present invention.
  • the external cavity semiconductor laser 10 includes a broad area semiconductor laser chip 1, a lens 5, a spatial filter 6, a cylindrical lens 7, and a partial reflection mirror 8.
  • An external optical system is formed by the lens 5, the spatial filter 6, the cylindrical lens 7, and the partial reflection mirror 8.
  • FIG. 1A is a view of the external resonator type semiconductor laser 10 as viewed from the upper surface side of the broad area semiconductor laser chip 1.
  • FIG. 1B is a view of the external cavity semiconductor laser 10 as viewed from the side of the broad area semiconductor laser chip 1.
  • FIG. 1C shows the structure of the spatial filter 6.
  • FIG. 1D is a diagram showing a slab-shaped optical waveguide 12 that can replace the spatial filter 6. In FIG. 1, the coordinate axes are indicated by arrows.
  • the broad area semiconductor laser chip 1 has an active region 2 on a substrate.
  • the active region 2 is sufficiently wide, and the substrate in-plane direction (coordinate axis Y direction) of the active region 2 functions as a multimode optical waveguide.
  • it has an optical confinement capability that functions as a single mode optical waveguide in the direction perpendicular to the substrate of the active region 2 (coordinate axis Z direction).
  • the coordinate axis X direction is the laser beam traveling direction
  • the coordinate axis Y direction is perpendicular to the laser beam traveling direction.
  • the end surface 3 of the broad area semiconductor laser chip 1 is provided with a high reflectivity coat (reflectance 98%). Further, the end surface 4 of the broad area semiconductor laser chip 1 is provided with a non-reflective coating (reflectance of 0.1% or less). For this reason, laser oscillation does not occur in the broad area semiconductor laser chip 1 alone.
  • a laser beam is generated by combining the broad area semiconductor laser chip 1 and an external optical system.
  • Broad area semiconductor laser chip 1 is made of a GaAs material.
  • the material system of the broad area semiconductor laser chip 1 is not limited to the GaAs system, and any material system can be used.
  • a Fabry-Perot resonator is formed by the end face 3 and the partial reflecting mirror 8.
  • the transverse mode is limited by the lens 5, the spatial filter 6, and the cylindrical lens 7 provided in the resonator, and single mode laser oscillation occurs.
  • Part of the generated laser light is extracted from the partial reflection mirror 8 as output light 11.
  • the light from the broad area semiconductor laser chip 1 is focused on the slit-shaped opening (aperture) 9 of the spatial filter 6 by the lens 5.
  • the light from the opening (aperture) 9 is converted into parallel light by the cylindrical lens 7 and is incident on the partial reflection mirror 8 which is an output mirror.
  • the coordinate mode Z direction is limited by the optical waveguide structure of the broad area semiconductor laser chip 1 so that the transverse mode becomes a single mode. Further, in the coordinate axis Y direction, since the optical path is limited by the spatial filter 6, the transverse mode becomes a single mode. As a result, the external cavity semiconductor laser 10 oscillates in a single transverse mode.
  • Fig. 1 (c) shows the structure of the spatial filter 6.
  • the spatial filter 6 has a structure in which a slit-shaped opening 9 is provided in the light shielding portion.
  • the spatial filter 6 was obtained by photoetching a metal and providing an opening 9 and then applying a black paint.
  • a light shielding material such as a metal was provided on a glass substrate, photoetching was performed, and a black electrodeposition paint was further applied. Things can be used.
  • FIG. 1D shows another example of replacing the spatial filter 6.
  • the slab optical waveguide 12 includes a core layer 13 that guides light.
  • the slab optical waveguide 12 performs single-mode optical confinement in the Y direction. For this reason, the slab-shaped optical waveguide 12 functions as a spatial filter.
  • the lens 5 and the cylindrical lens 7 in FIG. 1 can be replaced with a reflection optical system.
  • an optical system combining a reflecting mirror and a lens can be used.
  • a window area may be provided on the end face 3 and the end face 4 of the broad area semiconductor laser chip 1.
  • the laser output can be increased by providing a window region.
  • an optical waveguide type solid-state laser can also be used.
  • An optical waveguide solid-state laser in which the transverse mode is single in the vertical direction with respect to the substrate and the transverse mode is multimode in the horizontal direction with respect to the substrate can replace the broad area semiconductor laser chip 1 of this embodiment. it can. This also applies to the configuration shown in FIG. 4 and the configuration shown in FIG.
  • the laser oscillation is generated by the broad area semiconductor laser chip 1 having the wide active region 2, a large output laser beam can be obtained.
  • the laser oscillation mode can be controlled by the spatial filter 6 to obtain single mode laser oscillation or low order mode laser oscillation.
  • the configuration of FIG. 1 if there is no non-reflective coating on the end face 3, laser oscillation corresponding to the transverse mode (multi-mode) in the substrate surface of the active region 2 (coordinate axis Y direction) occurs.
  • the non-reflective coating is applied to the end face 3, laser oscillation corresponding to such a transverse mode (multimode) is suppressed.
  • laser oscillation corresponding to the transverse mode limited by the external optical system is generated. That is, it is possible to obtain single transverse mode or low order transverse mode laser oscillation.
  • FIG. 2 shows the configuration of an external cavity semiconductor laser 20 according to the second embodiment of the present invention.
  • the external cavity semiconductor laser 20 includes an external cavity VCSEL (vertical cavity surface emitting laser) chip 21, a lens 25, a spatial filter 26, a lens 27, and a partial reflection mirror 28.
  • the lens 25, the spatial filter 26, the lens 27, and the partial reflection mirror 28 form an external optical system.
  • the spatial filter 26 has a pinhole-shaped opening 29.
  • FIG. 2A is a diagram showing a configuration of the external resonator type semiconductor laser 20 .
  • FIG. 2B is a cross-sectional view of the VCSEL chip 21.
  • the VCSEL chip 21 can be provided with a wide light emitting area.
  • FIG. 2C shows an optical fiber 37 that substitutes for the spatial filter 26.
  • the external resonance VCSEL chip 21 includes a substrate 22, a semiconductor multilayer Bragg diffraction grating 23, a lower cladding layer 32, an active layer 24, an upper cladding layer 33, and an electrode 34.
  • a non-reflective coating layer 39 is applied to the light emitting portion 36 from the upper cladding layer 33.
  • the non-reflective coating layer 39 can also serve as a passivation film.
  • the external resonant VCSEL chip 21 has a light confinement function so as to have a multimode transverse mode in the in-plane direction of the substrate. Further, the multi-mode region is divided into a plurality of parts by the electrode 34. Although the laser light output is small, only a single multimode region can be used.
  • a contact layer (not shown) is provided between the upper clad layer 33 and the electrode 34 of the external resonance VCSEL chip 21.
  • the outgoing light 35 from the external resonant VCSEL chip 21 passes through the lens 25, the spatial filter 26, and the lens 27, and reaches the partial reflection mirror 28, where it is reflected and light feedback occurs. Since the optical path is limited by the spatial filter 26, the external resonator type semiconductor laser 20 oscillates in a single transverse mode. The generated laser light is extracted from the partial reflection mirror 28 as output light 31.
  • Fig. 2 (c) shows another example of replacing the spatial filter 26.
  • the optical fiber 37 includes a core 38 that guides light. Since the optical fiber 37 is a single transverse mode optical fiber, it functions as a spatial filter. An optical waveguide can be used instead of the optical fiber 37.
  • the lens 25 and the lens 27 in FIG. 2 can be replaced with a reflection optical system.
  • an optical system combining a reflecting mirror and a lens can be used.
  • the laser oscillation is generated by the external resonance type VCSEL chip 21 having a wide light emitting region, a high output laser beam can be obtained.
  • the mode of laser oscillation can be controlled by the spatial filter 26 to obtain single mode laser oscillation or low order mode laser oscillation.
  • FIG. 3A shows the configuration of a thin film solid-state laser 40 according to the third embodiment of the present invention.
  • the thin film solid laser 40 includes a thin film solid laser chip 41, a lens 25, a spatial filter 26, a lens 27, and a partial reflection mirror 28.
  • the thin film solid laser chip 41 is provided on the heat sink 43.
  • An active region 42 is provided in the thin film solid state laser chip 41.
  • the active region 42 has an optical confinement function in which the transverse mode becomes a multimode in the in-plane direction of the thin film solid-state laser chip 41.
  • the thin film solid-state laser chip 41 can use YAG crystal, YAG ceramics, or the like.
  • the active region 42 is doped with Nd, Yb, or the like.
  • the material of the thin film solid state laser chip 41 is not limited to YAG.
  • the material of the thin-film solid-state laser chip 41 is not limited to YAG, and any doping element can be used.
  • the thin film solid state laser chip 41 is laterally excited by the excitation light 44.
  • oblique excitation can be performed using the excitation light 45.
  • the lens 25 and the thin film solid laser chip 41 can be brought close to each other.
  • the thin film solid state laser chip 41 is obliquely excited by the excitation light 45, it is necessary to widen the distance between the lens 25 and the thin film solid state laser chip 41 to provide a space for the excitation light 45 to enter.
  • a high reflectance coating layer 46 is provided on the surface of the thin film solid state laser chip 41 on the heat sink 43 side.
  • a resonator optical system is formed by the high reflectivity coat layer 46, the lens 25, the spatial filter 26, the lens 27, and the partial reflection mirror 28 of the thin film solid-state laser chip 41.
  • the spatial filter 26 has a pinhole-shaped opening 29.
  • an independent reflecting mirror may be provided instead of the high reflectance coating layer 46.
  • the light from the thin-film solid-state laser chip 41 passes through the lens 25, the spatial filter 26, and the lens 27, and reaches the partial reflection mirror 28, where it is reflected and light returns. Since the optical path is limited by the spatial filter 26, the thin-film solid-state laser 40 oscillates in a single transverse mode.
  • low-order multimode laser oscillation can be generated in the external resonator type semiconductor laser 20 .
  • An optical fiber 37 can be used in place of the spatial filter 26.
  • the lens 25 and the lens 27 in FIG. 2 can be replaced with a reflection optical system.
  • an optical system combining a reflecting mirror and a lens can be used.
  • laser oscillation is generated by the thin-film solid-state laser chip 41 having the wide active region 42, so that high-power laser light can be obtained.
  • the mode of laser oscillation can be controlled by the spatial filter 26 to obtain single mode laser oscillation or low order mode laser oscillation.
  • the thin-film solid-state laser has a very small thin-film solid-state laser chip compared to a solid-state laser using a rod-shaped laser crystal.
  • a solid-state laser using a rod-shaped laser crystal In order to unify or reduce the transverse mode of the laser light, it is necessary to increase the length of the optical resonator. For this reason, the size of the laser oscillator has become much smaller than that of a solid-state laser using a rod-shaped laser crystal.
  • the size of the pinhole-shaped opening 29 is appropriately selected, so that the laser beam A single mode or a lower mode can be realized. Therefore, the laser oscillator can be reduced in size.
  • the lens 25 and the semiconductor laser chip 41 can be brought close to each other, which is very effective in reducing the size of the laser oscillator.
  • FIG. 4 shows the configuration of an external cavity semiconductor laser 50 according to the fourth embodiment of the present invention.
  • FIG. 4A is a view of the external cavity semiconductor laser 50 as viewed from the upper surface side of the broad area semiconductor laser chip 1.
  • FIG. 4B is a view of the external cavity semiconductor laser 50 as viewed from the side of the broad area semiconductor laser chip 1.
  • the external resonator type semiconductor laser 50 includes a broad area semiconductor laser chip 1, a cylindrical lens 51, a lens 52, and an output optical fiber 53.
  • the output optical fiber 53 has a single transverse mode, and a fiber Bragg diffraction grating 54 is provided.
  • An external optical system is formed by the cylindrical lens 51, the lens 52, and the fiber Bragg diffraction grating 54.
  • the light from the broad area semiconductor laser chip 1 is collimated in the coordinate axis Z direction by the cylindrical lens 51 and then guided to the output optical fiber 53 by the lens 52. Then, it is reflected by the fiber Bragg diffraction grating 54 provided in the output optical fiber 53, and returns to the broad area semiconductor laser chip 1 along the reverse path.
  • the active region 2 of the broad area semiconductor laser chip 1 functions as a single mode optical waveguide in a direction perpendicular to the substrate.
  • the outgoing light from the single mode optical waveguide has a divergence angle and is not parallel light. For this reason, it is necessary to use the cylindrical lens 51 to make parallel light in free space.
  • the cylindrical lens 51 if the cylindrical lens 51 is not provided, the coupling coefficient between the active region 2 and the output optical fiber 53 becomes extremely small, and the optical loss becomes very large.
  • the end face 3 and the fiber Bragg diffraction grating 54 form a Fabry-Perot resonator.
  • the transverse mode is limited by the output optical fiber 53, and single mode laser oscillation occurs.
  • a multimode optical fiber can also be used as the output optical fiber 53. In this case, laser oscillation in which the transverse mode is multimode occurs.
  • the transverse mode of laser oscillation of the external resonator type semiconductor laser 50 can be controlled.
  • the laser oscillation is generated by the broad area semiconductor laser chip 1 having the wide active region 2, a large output laser beam can be obtained.
  • the laser oscillation mode can be controlled by the output optical fiber 53 to obtain single mode laser oscillation or low order mode laser oscillation.
  • the longitudinal mode of laser oscillation can be controlled by using the fiber Bragg diffraction grating 54, and single longitudinal mode oscillation can also be realized.
  • the generated laser beam 55 is coupled to the output optical fiber 53, the laser beam 55 can be guided to an arbitrary location using the output optical fiber 53.
  • the fiber Bragg diffraction grating 54 is provided in the output optical fiber 53, there is an advantage that the number of parts is reduced. The number of parts is also reduced in that the optical system for laser oscillation also serves as a coupling optical system with the output optical fiber 53.
  • Patent Document 3 discloses an external resonator type semiconductor laser in which a wide stripe semiconductor laser (broad area type semiconductor laser) and a single mode waveguide are coupled via a mode converter using a prism.
  • the laser beam is converted using the cylindrical lens 51 and the (spherical) lens 52.
  • the cylindrical lens 51 and the (spherical) lens 52 there is no restriction on the ratio of the minor axis to the major axis of the laser beam. For this reason, since the stripe width of the wide stripe semiconductor laser (broad area type semiconductor laser) can be widened, the output of the laser beam can be increased.
  • Patent Document 3 discloses an external resonator type semiconductor laser in which a wide stripe semiconductor laser (broad area type semiconductor laser) and a fiber grating are coupled via a tapered waveguide.
  • mode conversion occurs in the tapered waveguide, and the loss of light is large.
  • a large optical loss occurs in a path from the single mode waveguide (optical fiber) side to the wide stripe semiconductor laser (broad area type semiconductor laser) side. For this reason, there has been a problem that the efficiency of laser oscillation is lowered.
  • the laser beam is converted using the cylindrical lens 51 and the lens 52. With this method, the above optical loss does not occur. Therefore, the laser oscillation efficiency does not decrease.
  • the cylindrical lens 51 can be replaced with a cylindrical mirror.
  • the lens 52 can be replaced with a concave mirror.
  • the lens 5 can be replaced with a concave mirror.
  • the cylindrical lens 7 can be replaced with a cylindrical mirror.
  • the lens 27 and the partial reflecting mirror 28 can be replaced with one concave reflecting mirror (partial reflecting mirror).
  • This configuration has the advantage that the number of parts is reduced and the number of steps for optical alignment is also reduced.
  • FIG. 5 shows the configuration of an external cavity semiconductor laser 60 according to the fifth embodiment of the present invention.
  • the external cavity semiconductor laser 60 includes an external cavity VCSEL (vertical cavity surface emitting laser) chip 21, a lens 25, and an output optical fiber 53.
  • the output optical fiber 53 has a single transverse mode, and a fiber Bragg diffraction grating 54 is provided.
  • An external optical system is formed by the lens 25 and the fiber Bragg diffraction grating 54.
  • the configuration of the external resonant VCSEL chip 21 is as described in the second embodiment.
  • the outgoing light 35 from the external resonant VCSEL chip 21 is coupled to the output optical fiber 53 by the lens 25, and a part thereof is reflected by the fiber Bragg diffraction grating 54.
  • the reflected light follows the reverse path and returns to the external resonant VCSEL chip 21.
  • the feedback light is amplified and reaches the fiber Bragg diffraction grating 54 again through the lens 25. As a result, laser oscillation occurs.
  • the transverse mode is limited by the output optical fiber 53, and single mode laser oscillation occurs. If a multimode optical fiber is used as the output optical fiber 53, the order of the transverse mode that oscillates can be controlled.
  • laser oscillation is generated by the external resonance type VCSEL chip having a wide active region, so that a high-power laser beam can be obtained.
  • the laser oscillation mode can be controlled by the output optical fiber 53 to obtain single mode laser oscillation or low order mode laser oscillation.
  • the longitudinal mode of laser oscillation can be controlled by using the fiber Bragg diffraction grating 54, and single longitudinal mode oscillation can also be realized.
  • the generated laser light is coupled to the output optical fiber 53, the laser light can be guided to an arbitrary place using the output optical fiber 53.
  • the fiber Bragg diffraction grating 54 is provided in the output optical fiber 53, there is an advantage that the number of parts is reduced. The number of parts is also reduced in that the optical system for laser oscillation also serves as a coupling optical system with the output optical fiber 53.
  • FIG. 6 shows the configuration of a thin film solid-state laser 70 according to the sixth embodiment of the present invention.
  • the thin film solid state laser 70 includes a thin film solid state laser chip 41, a lens 25, and an output optical fiber 53.
  • the output optical fiber 53 has a single transverse mode, and a fiber Bragg diffraction grating 54 is provided.
  • An external optical system is formed by the lens 25 and the fiber Bragg diffraction grating 54.
  • the thin film solid state laser chip 41 is provided on the heat sink 43.
  • An active region 42 is provided in the thin film solid state laser chip 41.
  • the configuration of the thin film solid state laser chip 41 is as described in the third embodiment.
  • the light from the thin film solid-state laser chip 41 is coupled to the output optical fiber 53 by the lens 25, and a part thereof is reflected by the fiber Bragg diffraction grating 54.
  • the reflected light follows the reverse path and returns to the thin film solid state laser chip 41.
  • the feedback light is amplified and reaches the fiber Bragg diffraction grating 54 again through the lens 25. As a result, laser oscillation occurs.
  • the transverse mode is limited by the output optical fiber 53, and single mode laser oscillation occurs. If a multimode optical fiber is used as the output optical fiber 53, the order of the transverse mode that oscillates can be controlled.
  • laser oscillation is generated by the thin-film solid-state laser chip 41 having a wide active region, so that high-power laser light can be obtained.
  • the laser oscillation mode can be controlled by the output optical fiber 53 to obtain single mode laser oscillation or low order mode laser oscillation.
  • the longitudinal mode of laser oscillation can be controlled by using the fiber Bragg diffraction grating 54, and single longitudinal mode oscillation can also be realized.
  • the generated laser light is coupled to the output optical fiber 53, the laser light can be guided to an arbitrary place using the output optical fiber 53.
  • the fiber Bragg diffraction grating 54 is provided in the output optical fiber 53, there is an advantage that the number of parts is reduced. The number of parts is also reduced in that the optical system for laser oscillation also serves as a coupling optical system with the output optical fiber 53.
  • FIG. 7 shows the configuration of a solid-state laser 80 according to the seventh embodiment of the present invention.
  • the solid laser 80 includes a reflecting mirror 82, a solid laser rod 81, a lens 25, and an output optical fiber 53.
  • the output optical fiber 53 has a single transverse mode, and a fiber Bragg diffraction grating 54 is provided.
  • An external optical system is formed by the lens 25 and the fiber Bragg diffraction grating 54.
  • the solid laser rod 81 may be a YAG crystal, a YAG ceramic, or the like.
  • the solid laser rod 81 is doped with Nd, Yb, or the like.
  • the material of the solid laser rod 81 is not limited to YAG.
  • the active region 42 is doped with Nd, Yb, or the like.
  • the material of the solid-state laser rod 81 is not limited to YAG, and any doping element can be used.
  • the solid laser rod 81 has a cylindrical shape, but a slab shape can also be used.
  • the solid laser rod 81 is laterally excited by the excitation light 83. Further, end face excitation can also be performed using the excitation light 84. When end face excitation is performed using the excitation light 84, the reflecting mirror 82 is configured to reflect the laser oscillation light and transmit the excitation light 84.
  • the solid laser rod 81 has an optical confinement function in which the transverse mode is a multimode in a plane perpendicular to the laser oscillation direction. Many solid state laser rods satisfy such a condition.
  • the light from the solid laser rod 81 is coupled to the output optical fiber 53 by the lens 25, and a part thereof is reflected by the fiber Bragg diffraction grating 54.
  • the reflected light follows the reverse path and returns to the thin film solid state laser chip 41.
  • the feedback light is amplified and reaches the fiber Bragg diffraction grating 54 again through the lens 25. As a result, laser oscillation occurs.
  • the transverse mode is limited by the output optical fiber 53, and single mode laser oscillation occurs. If a multimode optical fiber is used as the output optical fiber 53, the order of the transverse mode that oscillates can be controlled.
  • the laser oscillation is generated by the solid laser rod 81 having a wide active region, a high-power laser beam can be obtained.
  • the laser oscillation mode can be controlled by the output optical fiber 53 to obtain single mode laser oscillation or low order mode laser oscillation.
  • the longitudinal mode of laser oscillation can be controlled by using the fiber Bragg diffraction grating 54, and single longitudinal mode oscillation can also be realized.
  • the generated laser light is coupled to the output optical fiber 53, the laser light can be guided to an arbitrary place using the output optical fiber 53.
  • the fiber Bragg diffraction grating 54 is provided in the output optical fiber 53, there is an advantage that the number of parts is reduced. The number of parts is also reduced in that the optical system for laser oscillation also serves as a coupling optical system with the output optical fiber 53.
  • FIG. 8A shows the configuration of the semiconductor laser array chip 91 used in the eighth embodiment of the present invention.
  • a plurality of active regions 92 are provided on the semiconductor laser array chip 91.
  • Each of the active regions 92 functions as a multimode optical waveguide in the substrate in-plane direction (coordinate axis Y direction).
  • a non-excitation region 96 where current is not injected is provided between the plurality of active regions 92. Absorption of laser light occurs in the non-excitation region 96.
  • the end face 93 of the semiconductor laser array chip 91 is provided with a high reflectivity coat (reflectance 98%). Further, the end face 94 of the broad area semiconductor laser chip 1 is provided with a non-reflective coating (reflectance of 0.1% or less).
  • a semiconductor laser array chip 91 can be used in place of the broad area semiconductor laser chip 1.
  • parasitic oscillation light 95 is likely to be generated in the coordinate axis Y direction.
  • the semiconductor laser array chip 91 is used, laser light is absorbed (lost) by the non-excitation region 96 between the plurality of active regions 92, and thus such parasitic oscillation can be suppressed. Note that laser light loss may be caused between the active regions 92 by using other means.
  • a semiconductor laser array chip 91 can be used in place of the broad area semiconductor laser chip 1. This also has the effect of suppressing parasitic oscillation in the direction of the coordinate axis Y.
  • FIG. 9 shows the configuration of an external cavity semiconductor laser 100 according to the ninth embodiment of the present invention.
  • FIG. 9A is a view of the external cavity semiconductor laser 100 as seen from the upper surface side of the broad area semiconductor laser chip 1.
  • FIG. 9B is a view of the external cavity semiconductor laser 100 as viewed from the side surface side of the broad area semiconductor laser chip 1.
  • FIG. 9C is a diagram showing another configuration of the partial reflection mirror.
  • the external cavity semiconductor laser 100 includes a broad area semiconductor laser chip 1, a cylindrical lens 51, and a partial reflection mirror 101. An external optical system is formed by the cylindrical lens 51 and the partial reflection mirror 101. The generated laser light is extracted as output light 102.
  • the partial reflecting mirror 101 is a plane mirror. Instead of the partial reflection mirror 101, a concave mirror 103 as shown in FIG.
  • the light from the broad area semiconductor laser chip 1 is collimated in the coordinate axis Z direction by the cylindrical lens 51 and then guided to the partial reflecting mirror 101. Then, the light is reflected by the partial reflecting mirror 101 and returns to the broad area semiconductor laser chip 1 along the reverse path.
  • the end face 3 and the partial reflection mirror 101 form a Fabry-Perot resonator.
  • the transverse mode is controlled to a low-order mode or a single mode. can do.
  • the semiconductor laser array chip 91 shown in FIG. 8 can be used.
  • the present embodiment has an advantage that the number of parts can be reduced as compared with the configuration shown in FIG. However, the length of the resonator needs to be longer than the configuration shown in FIG.
  • FIG. 10 shows the configuration of an external cavity semiconductor laser 110 according to the tenth embodiment of the present invention.
  • the external cavity semiconductor laser 110 includes an external cavity VCSEL (vertical cavity surface emitting laser) chip 21 and a partial reflection mirror 111.
  • VCSEL vertical cavity surface emitting laser
  • the configuration of the external resonant VCSEL chip 21 is as described in the second embodiment.
  • a part of the outgoing light 35 from the external resonant VCSEL chip 21 is reflected by the partial reflecting mirror 111.
  • the reflected light returns to the external resonance type VCSEL chip 21.
  • the feedback light is amplified and reaches the partial reflection mirror 111 again. As a result, laser oscillation occurs.
  • Part of the generated laser light is extracted as output light 112.
  • the lateral mode can be controlled to a low-order mode or a single mode by setting the distance between the external resonant VCSEL chip 21 and the partial reflection mirror 111 to be sufficiently larger than the width of the active region.
  • the partial reflection mirror 111 either a plane mirror or a concave mirror can be used.
  • This embodiment has an advantage that the number of parts can be reduced as compared with the configuration shown in FIG. However, the length of the resonator needs to be longer than that shown in FIG.
  • FIG. 11 shows the configuration of an external cavity semiconductor laser 120 according to the eleventh embodiment of the present invention. This embodiment is a modification of the external cavity semiconductor laser 50 shown in FIG.
  • FIG. 11A is a view of the external resonator type semiconductor laser 120 as viewed from the upper surface side.
  • FIG. 11B is a view of the external cavity semiconductor laser 120 as viewed from the side.
  • the external resonator type semiconductor laser 120 uses a semiconductor laser array chip 91 instead of the broad area semiconductor laser chip 1.
  • an aperture 121 and a plane reflecting mirror 122 are provided between the cylindrical lens 51 and the lens 52.
  • a multimode optical fiber 123 is provided in place of the output optical fiber 53.
  • the aperture 121 has an opening corresponding to each active region 92 (92a, 92b, 92c, 92d) of the semiconductor laser array chip 91.
  • the semiconductor laser array chip 91 functions as a multimode optical waveguide in the substrate surface direction (coordinate axis Y direction) of the active region 92.
  • it has an optical confinement capability that functions as a single-mode optical waveguide in the direction perpendicular to the substrate of the active region 92 (coordinate axis Z direction).
  • a Fabry-Perot resonator is formed by the end face 93 and the planar reflecting mirror 122. Since the optical path is separated by the aperture 121, laser beams 124a, 124b, 125c, and 125d are generated corresponding to the active regions 92a, 92b, 92c, and 92d of the semiconductor laser array chip 91.
  • the laser beam 124 which is a set of the laser beams 124a, 124b, 125c, and 125d, has a multimode transverse mode, and is condensed by the lens 52 and coupled to the multimode optical fiber 123 as output light.
  • a plurality of apertures 121 can be provided in the optical path. By providing a plurality of apertures 121, the degree of optical path separation can be increased. Alternatively, as the aperture 121, an aperture having a thickness in the direction of the laser beam 124 may be used. This configuration can also increase the degree of optical path separation.
  • the transverse mode of the laser beams 124a, 124b, 125c, and 125d may be a single mode or a relatively low-order transverse mode.
  • the generation of the laser beam 124 can be adjusted first by optically aligning the planar reflecting mirror 122.
  • the introduction of the laser beam 124 into the multimode optical fiber 123 can be adjusted by the optical alignment of the lens 52 and the multimode optical fiber 123. Since optical alignment can be performed step by step in this way, adjustment is easy.
  • the resonator length L be sufficiently large with respect to the width w of the active region 92.
  • the resonator length L is the distance from the end surface 93 to the reflecting surface of the planar reflecting mirror 122 as shown in FIG.
  • the ratio of the width w of the active region 92 to the resonator length L is preferably L / w ⁇ 100.
  • L ⁇ 1 cm for w 100 ⁇ m. The larger this ratio, the lower the transverse mode of the laser beams 124a, 124b, 125c, and 125d.
  • the transverse mode of the laser beams 124a, 124b, 125c, and 125d particularly refers to a transverse mode in the substrate surface direction (coordinate axis Y direction) of the active region 92.
  • the semiconductor laser array chip 91 functions as a single mode optical waveguide. Therefore, a single mode laser beam is formed in this direction.
  • the width w of the active region 92 can be made narrower than that of the broad area semiconductor laser chip 1. Therefore, high L / w can be obtained even with a short resonator length.
  • the relationship between the ratio of the active region width w to the resonator length L also applies to the case of FIG. In the case of FIG. 9, if the width of the active region 2 is 1 mm, the resonator length L ⁇ 10 cm is preferable.
  • the spatial filter 6 when the spatial filter 6 is inserted into the resonator as shown in FIG. 1 or the like, the transverse mode control is performed by the spatial filter 6, and therefore the L / w ratio may be small. That is, the configuration in which the spatial filter is introduced into the resonator has an advantage that the resonator can be reduced in size.
  • the planar reflecting mirror 122 may be a reflective filter that partially reflects only a specific wavelength.
  • the laser beam 124 has a wavelength of 976 nm. This wavelength is suitable for exciting an optical amplification fiber having a core doped with ytterbium (Yb) in silica.
  • planar reflecting mirror 122 for example, glass having a dielectric multilayer film formed on the surface can be used. According to this configuration, it is possible to adjust the peak wavelength of reflectance, the reflectance, and the like of the planar reflecting mirror 122 over a wide range.
  • the configuration in which the reflecting mirror reflects only a specific wavelength can also be applied to the partial reflecting mirror 8 in FIG. 1, the partial reflecting mirror 28 in FIG. 2, the partial reflecting mirror 101 in FIG. it can.
  • the external cavity semiconductor laser having such a configuration is suitable for exciting a solid-state laser having an absorption region in a narrow wavelength range.
  • the optical path corresponding to each active region 92 in the external optical system is optically separated by the aperture 121. Therefore, a single transverse mode or low-order transverse mode laser beam is generated corresponding to each active region 92.
  • the transverse mode of the laser beam 124 which is a set of laser beams generated for each active region 92, is a multimode.
  • Optical alignment with the multimode optical fiber 123 is easier than a single mode output optical fiber.
  • the multi-mode optical fiber has a large core area, it is possible to couple light with higher output.
  • the lateral mode control is facilitated by optically separating each active region 92 of the semiconductor laser array chip 91.
  • a complicated super mode may be formed. Formation of such a super mode can be prevented by the aperture 121.
  • the active fiber can be excited stably, a stable optical amplifier or laser oscillator can be realized.
  • an external resonator type semiconductor laser in which the partial reflection mirror 8 in FIG. 1, the partial reflection mirror 28 in FIG. 2, and the partial reflection mirror 101 in FIG. The combination of these functions as an optical amplifier or a laser oscillator.
  • the solid-state laser medium can be stably excited, a stable optical amplifier or laser oscillator can be realized.
  • FIG. 12 shows the configuration of an external cavity semiconductor laser 130 according to the twelfth embodiment of the present invention.
  • This embodiment is a modification of the external cavity semiconductor laser 120 shown in FIG.
  • FIG. 12A is a diagram of the external cavity semiconductor laser 130 viewed from the upper surface side, and corresponds to FIG.
  • FIG. 12B is a view of the external cavity semiconductor laser 130 viewed from the side surface side, and corresponds to FIG.
  • FIG. 12A corresponds to a view of FIG. 12B viewed from the arrow A side.
  • the external resonator type semiconductor laser 130 is provided with a plurality of mounts 132 on the cooling surface 134 of the heat sink 133.
  • a semiconductor laser array chip 91 is provided on each mount 132 in a junction-down manner.
  • a cylindrical lens 51 is provided above the heat sink 133 so as to correspond to each semiconductor laser array chip 91.
  • An aperture 131 and a plane reflecting mirror 122 are provided between the cylindrical lens 51 and the lens 52.
  • the aperture 131 is different from the aperture 121 in that the openings are two-dimensionally arranged.
  • the mount 132 may be insulative or conductive. Further, a submount can be provided between the mount 132 and the semiconductor laser array chip 91. The submount may be insulative or conductive.
  • the light emitted from the plurality of semiconductor laser array chips 91 is substantially perpendicular to the cooling surface 134 of the heat sink 133.
  • the light emitted from the plurality of semiconductor laser array chips 91 is arranged in a two-dimensional manner.
  • a Fabry-Perot resonator is formed by the end face 93 and the planar reflecting mirror 122.
  • the generated laser beam 124 is collected by the lens 52 and coupled to the multimode optical fiber 123 as output light.
  • the active region 92 of the semiconductor laser array chip 91 is two-dimensionally arranged. Similar to the case of FIG. 11, also in FIG. 12, the optical path corresponding to each active region 92 of the external optical system is optically separated by the aperture 121. Therefore, a single transverse mode or low-order transverse mode laser beam is generated corresponding to each active region 92. As a result, the transverse mode of the laser beam 124, which is a set of laser beams generated for each active region 92, is a multimode.
  • the laser light 124 generated by the plurality of semiconductor laser array chips 91 is coupled to the output optical fiber 123, so that a larger output laser light is extracted as output light. Can do.
  • the semiconductor laser array chip 91 can be replaced with a broad area semiconductor laser chip. This configuration has the advantage that the structure is simple.
  • FIG. 13 shows the configuration of an external resonator type semiconductor laser 140 according to the thirteenth embodiment of the present invention.
  • This embodiment is a modification of the external cavity semiconductor laser 120 shown in FIG.
  • FIG. 13A is a view of the external cavity semiconductor laser 140 as viewed from the side.
  • FIG. 13B is a view of the mount 141, the semiconductor laser array chip 91, and the prism type reflecting mirror 142 provided on the heat sink 133 as seen from the upper surface of the heat sink 133.
  • the external resonator type semiconductor laser 140 is provided with a plurality of mounts 141 on the cooling surface 134 of the heat sink 133.
  • a semiconductor laser array chip 91 is provided on each mount 141 in a junction-down manner.
  • a prism type reflecting mirror 142 is provided on the cooling surface 134 of the heat sink 133 corresponding to each semiconductor laser array chip 91.
  • a cylindrical lens 51 is provided above the heat sink 133 so as to correspond to each semiconductor laser array chip 91.
  • An aperture 131 and a plane reflecting mirror 122 are provided between the cylindrical lens 51 and the lens 52.
  • the aperture 131 has two-dimensionally arranged openings.
  • the light emitted from the plurality of semiconductor laser array chips 91 is reflected by the prism type reflecting mirror 142 and emitted in the direction perpendicular to the cooling surface 134 of the heat sink 133.
  • Light emitted from the plurality of semiconductor laser array chips 91 is two-dimensionally arranged.
  • a Fabry-Perot resonator is formed by the end face 93 and the planar reflecting mirror 122.
  • the generated laser beam 124 is collected by the lens 52 and coupled to the multimode optical fiber 123 as output light.
  • the semiconductor laser array chip 91 having a long active region 92 can be efficiently cooled.
  • the semiconductor laser array chip 91 can be replaced with a broad area semiconductor laser chip. This configuration has the advantage that the structure is simple.
  • FIG. 14 shows the configuration of an external resonator type semiconductor laser 150 according to the fourteenth embodiment of the present invention.
  • This embodiment is a modification of the external cavity semiconductor laser 120 shown in FIG.
  • FIG. 14A is a view of the external cavity semiconductor laser 150 as viewed from the upper surface side.
  • FIG. 14B is a view of the external cavity semiconductor laser 150 as viewed from the side.
  • FIG. 14B corresponds to FIG. 14A viewed from the arrow B side.
  • the external resonator type semiconductor laser 150 is provided with a plurality of mounts 132 on the cooling surface 134 of the heat sink 133. On each mount 132, a broad area semiconductor laser chip 1 is provided in a junction-down manner. The broad area semiconductor laser chip 1 is provided so that the Y direction (see FIG. 1) of the broad area semiconductor laser chip 1 is perpendicular to the cooling surface 134 of the heat sink 133.
  • a cylindrical lens 51 is provided on the heat sink 133 corresponding to each broad area semiconductor laser chip 1.
  • a planar reflecting mirror 122, cylindrical lenses 151, and 152 are provided on the heat sink 133.
  • a multimode optical fiber 123 is attached on the heat sink 133 by a support portion 153.
  • a Fabry-Perot resonator is formed by the end face 3 of the broad area semiconductor laser chip 1 and the planar reflecting mirror 122.
  • the generated laser beam 124 is condensed by the cylindrical lenses 151 and 152 and coupled to the multimode optical fiber 123 as output light.
  • the laser beam 124 is generated in a direction parallel to the cooling surface 134 of the heat sink 133.
  • the external optical system including the cylindrical lens 51, the planar reflecting mirror 122, the cylindrical lenses 151 and 152, and the multimode optical fiber 123 is formed on the cooling surface 134 of the heat sink 133.
  • the cooling surface 134 also functions as a surface plate for aligning the external optical system. According to this configuration, there is an advantage that optical alignment is easy.
  • FIG. 15 shows the configuration of an external cavity semiconductor laser 160 according to the fifteenth embodiment of the present invention.
  • This embodiment is a modification of the external cavity semiconductor laser 130 shown in FIG.
  • FIG. 15A is a view of the external cavity semiconductor laser 160 as viewed from the upper surface side.
  • FIG. 15B is a view of the external cavity semiconductor laser 160 as viewed from the side.
  • an optical fiber 162 including a fiber Bragg diffraction grating 161 is provided instead of the planar reflecting mirror 122 and the multimode optical fiber 123.
  • a Fabry-Perot resonator is formed by the end face 93 and the fiber Bragg diffraction grating 161.
  • the generated laser light 124 is collected by the lens 52 and coupled to the optical fiber 162 as output light.
  • the transverse mode of the optical fiber 162 is a single mode or a multimode.
  • the transverse mode of the laser beam 124 is a single mode or a multimode.
  • the external cavity semiconductor laser 160 has an advantage that a laser beam whose transverse mode is a single mode can be generated.
  • the oscillation wavelength can be controlled by the fiber Bragg diffraction grating 161.
  • the configuration is also simple.
  • an optical fiber 162 including a fiber Bragg diffraction grating 161 can be provided instead of the planar reflecting mirror 122 and the multimode optical fiber 123.
  • FIG. 16 shows the configuration of an external resonator type semiconductor laser 170 according to the sixteenth embodiment of the present invention.
  • This embodiment is a modification of the external cavity semiconductor laser 120 shown in FIG.
  • FIG. 16A is a view of the external cavity semiconductor laser 170 as viewed from the upper surface side, and corresponds to FIG.
  • FIG. 16B is a view of the external resonator type semiconductor laser 170 as viewed from the side, and corresponds to FIG.
  • the external resonator type semiconductor laser 170 includes a semiconductor laser array chip 91, a cylindrical lens 51, a cylindrical lens array 171, a spatial filter 172, a cylindrical lens array 173, a plane reflecting mirror 122, a lens 52, and A multimode optical fiber 123 is provided.
  • a cylindrical lens array 171 In place of the aperture 121 in FIG. 11, a cylindrical lens array 171, a spatial filter 172, and a cylindrical lens array 173 are provided.
  • the cylindrical lens array 171 focuses light from each active region 92 of the semiconductor laser array chip 91 on the spatial filter 171.
  • the cylindrical lens array 173 guides the light from the spatial filter 171 to the plane reflecting mirror 122 instead of parallel light.
  • a Fabry-Perot resonator is formed by the end face 93 of the semiconductor laser array chip 91 and the planar reflecting mirror 122.
  • the generated laser beam 124 is collected by the lens 52 and coupled to the multimode optical fiber 123 as output light.
  • the transverse mode of the laser beam 124 can be reduced to a lower order or a single mode. This principle is the same as that of the external resonator type semiconductor laser 10 shown in FIG. For this reason, the low-order mode or single-mode laser beam 124 can be obtained even if the L / w ratio is small.
  • Cylindrical lens arrays 171 and 173 can divert off-the-shelf ready-made optical components as slow-phase (slow) axis collimators.
  • the slow-phase (slow) axis collimator is an optical component used in combination with a semiconductor laser array, and is easily available and inexpensive. Therefore, in the external cavity semiconductor laser 160 , development cost and product manufacturing cost can be reduced.
  • an off-the-shelf optical component widely distributed as a fast axis collimator can be used as the cylindrical lens 51.
  • a spherical lens array (an array of lenses corresponding to the lens 5 in FIG. 1) can be used instead of the cylindrical lens 51 and the cylindrical lens array 171.
  • This configuration is a modification of the external resonator type semiconductor laser 160 and has the optical system array structure of FIG.
  • FIG. 17A shows the configuration of a semiconductor laser 180 according to the seventeenth embodiment of the present invention.
  • the semiconductor laser 180 includes a conductive mount 181, a conductive submount 183, a broad area semiconductor laser chip 1, an insulator block 184, an electrode 185, and a collimator lens 190.
  • the mount 181 includes an optical system mounting portion 191 having a step structure.
  • Mount 182 includes screw holes 186 and 187.
  • a collimator lens 190 is provided on the optical system mounting portion 191 of the mount 181.
  • the submount 183 is bonded on the mount 181, and the broad area semiconductor laser chip 1 is bonded on the submount 183.
  • An insulator block 184 is bonded onto the mount 181, and an electrode 185 is bonded onto the insulator block 184.
  • the electrode 185 and the semiconductor laser chip 182 are connected by a conductive wire 188.
  • Light from the broad area semiconductor laser chip 1 is converted into parallel light by a collimator 190 and emitted as laser light 193.
  • the mount 181 is attached to the heat sink 196 using two screws 194.
  • the semiconductor laser 180 can be applied to the external resonator type semiconductor laser 150 shown in FIG.
  • the semiconductor laser 180 can replace the mount 132, the broad area semiconductor laser chip 1, and the cylindrical lens 51.
  • the semiconductor laser 180 can be attached to the heat sink 196 by the screw 194, there is an advantage that it is easy to assemble.
  • a dielectric multilayer film may be provided on the flat portion 192 of the collimator lens 190 to provide a partial reflection mirror that reflects a specific wavelength.
  • the semiconductor laser 180 functions as an external resonator type semiconductor laser.
  • the transverse mode is relatively high-order, but the oscillation wavelength is cobanded. Therefore, it is suitable as an excitation light source for a rod-shaped, slab-shaped, or disk-shaped solid laser medium.
  • a light guide made of a glass plate can be provided in the optical system mounting portion 191 of the semiconductor laser 180 .
  • this configuration is a simple structure, the laser beam 193 can be prevented from being scattered by the mount 181.
  • the mounting portion 191 is configured by providing a step on the mount 181, but it may be a simple planar structure. When the collimator lens 190 is small or a light guide is used, the optical system mounting portion 191 may be a flat surface. A structure in which the optical system mounting portion 191 is flat is easy to manufacture.
  • FIG. 18A shows the configuration of a semiconductor laser 200 according to the eighteenth embodiment of the present invention.
  • the semiconductor laser 200 includes a conductive mount 201, a conductive submount 183, a semiconductor laser array chip 91, an insulator block 184, an electrode 185, and a collimator lens 203.
  • FIG. 18B is a cross-sectional view of the semiconductor laser 200 taken along the line CC ′.
  • the mount 181 includes an optical system mounting portion 202 having a step structure.
  • Mount 182 includes screw holes 186 and 187.
  • a collimator lens 203 is provided on the optical system mounting portion 202 of the mount 181. The light from the semiconductor laser array chip 91 is converted into parallel light by the collimator lens 203 and emitted as laser light 204.
  • the semiconductor laser 180 can be applied to the external resonator type semiconductor laser 130 shown in FIG.
  • the semiconductor laser 180 can replace the mount 132, the semiconductor laser array chip 91, and the cylindrical lens 51.
  • the semiconductor laser 200 can be attached to the heat sink using screws, there is an advantage that it is easy to assemble.
  • a dielectric multilayer film may be provided on the flat portion 205 of the collimator lens 203 to provide a partial reflection mirror that reflects a specific wavelength.
  • the semiconductor laser 200 functions as an external resonator type semiconductor laser.
  • the transverse mode is relatively high-order, but the oscillation wavelength is cobanded. Therefore, it is suitable as an excitation light source for a rod-shaped, slab-shaped, or disk-shaped solid laser medium.
  • a light guide made of a glass plate can be provided in the optical system mounting portion 202 of the semiconductor laser 200 .
  • this configuration is a simple structure, the laser beam 204 can be prevented from being scattered by the mount 201.
  • the optical system mounting portion 202 is configured by providing a step on the mount 201, but it may be a simple planar structure. When the collimator lens 203 is small or a light guide is used, the mounting portion 202 may be a flat surface. A structure in which the optical system mounting portion 202 is flat is easy to manufacture.
  • An external resonator type semiconductor laser characterized in that a spatial filter is provided in the external optical system for limiting the optical path in the substrate surface direction of the semiconductor laser chip.
  • a lens is provided in the external optical system, and the lens converts light from the broad area semiconductor laser in a direction perpendicular to the substrate into parallel light, and light in a direction horizontal to the substrate.
  • An external cavity semiconductor laser characterized in that light is condensed at an opening of a spatial filter.
  • the thin-film solid-state laser chip has an optical confinement function in which the transverse mode becomes multimode in the in-plane direction,
  • the thin-film solid-state laser chip is provided on a heat sink, a high-reflectivity reflecting mirror is provided on the heat sink side of the thin-film solid-state laser chip, and the surface of the thin-film solid-state laser chip opposite to the heat sink is optically coupled to the resonator optical system
  • a thin-film solid-state laser comprising a spatial filter for limiting an optical path in a resonator optical system.
  • the first end face is given a high reflectivity coat
  • the second end face is given a non-reflective coat
  • the second end face and the external optical system are optically coupled
  • An external resonator type semiconductor laser wherein an optical fiber having a fiber Bragg diffraction grating is provided in an external optical system.
  • the thin-film solid-state laser chip has an optical confinement function in which the transverse mode becomes multimode in the in-plane direction,
  • the thin-film solid-state laser chip is provided on a heat sink, a high-reflectivity reflecting mirror is provided on the heat sink side of the thin-film solid-state laser chip, and the surface of the thin-film solid-state laser chip opposite to the heat sink is optically coupled to the resonator optical system
  • a thin-film solid-state laser comprising an optical fiber having a fiber Bragg diffraction grating in an external optical system.
  • the solid-state laser medium has an optical confinement function in which the transverse mode becomes a multimode in a plane perpendicular to the laser oscillation light,
  • a solid-state laser characterized in that a solid-state laser medium and an optical fiber including a fiber Bragg diffraction grating are optically coupled by a lens, and a resonator is constituted by a reflecting mirror and a fiber Bragg diffraction grating.
  • This semiconductor laser chip is a semiconductor laser array having a plurality of active regions, and each active region constituting this semiconductor laser array has a light confinement function as a multimode optical waveguide in the substrate in-plane direction.
  • the vertical direction there is a light confinement function in which the transverse mode is single.
  • a high reflectivity coat is applied to the first end face of the semiconductor laser chip, and a non-reflective coat is applied to the second end face.
  • An external resonator type semiconductor laser characterized in that a spatial filter is provided in the external optical system for limiting the optical path in the substrate surface direction of the semiconductor laser chip.
  • This semiconductor laser chip is a semiconductor laser array having a plurality of active regions, and each active region constituting this semiconductor laser array has a light confinement function as a multimode optical waveguide in the substrate in-plane direction.
  • this broad area semiconductor laser there is an optical confinement function in which the transverse mode becomes a multimode optical waveguide, and in the direction perpendicular to the substrate.
  • There is a light confinement function in which the transverse mode becomes a single mode the first end face is given a high reflectivity coat, the second end face is given a non-reflective coat, The second end face and the external optical system are optically coupled,
  • the external optical system includes a cylindrical lens and a reflecting mirror,
  • the cylindrical lens is an external resonator type semiconductor laser that converts light in a direction in which the transverse mode of the broad area type semiconductor laser becomes a single mode into parallel light, and then guides the light to a reflecting mirror.
  • This semiconductor laser chip is a semiconductor laser array having a plurality of active regions, and each active region constituting this semiconductor laser array has a light confinement function as a multimode optical waveguide in the substrate in-plane direction.
  • the external optical system includes a cylindrical lens and a reflecting mirror,
  • the cylindrical lens is an external cavity semiconductor laser characterized by converting light in a direction in which the transverse mode of the broad area semiconductor laser becomes a single mode into parallel light and then guiding the light to a partial reflection mirror.
  • SYMBOLS 1 Broad area semiconductor laser chip, 2 ... Active area
  • external cavity type semiconductor laser 111 ... partially reflecting mirror, 112 ... output light 120 ... external cavity type semiconductor laser, 121 ... aperture 122 ... plane reflecting mirror, 123 ... Multimode optical fiber, 124 (collective) laser light, 124a ... laser light corresponding to the active region 92a, 124b ... laser light corresponding to the active region 92b, 124c ... laser light corresponding to the active region 92c, 124d ... Laser light corresponding to the active region 92d, 130 ... external cavity semiconductor laser, 131 ... aperture, 132 ... mount, 133 ... heat sink, 134 ... cooling surface of the heat sink 133, 140 ... external cavity semiconductor laser, 141 ... mount , 142 ...
  • prismatic reflector 150 ... external cavity semiconductor laser, 1 1,152 ... cylindrical lens 153 ... support portion, 160 ... external cavity type semiconductor laser, 161 ... fiber Bragg grating, 162 ... optical fiber, 170 external cavity semiconductor laser, 171 ... cylindrical lens array, 172 ... space Filter, 173 ... Cylindrical lens array, 180 ... Semiconductor laser, 181 ... Conductive mount, 183 ... Conductive submount, 184 ... Insulator block, 185 ... Electrode, 186, 187 ... Screw hole, 188 ... Conductive Wire: 190 ... Collimator lens, 191 ... Optical system mounting portion, 192 ... Planar portion of collimator lens 190, 193 ...
  • Laser light 194 ... Screw, 196 ... Heat sink, 200 ... Semiconductor laser, 201 ... Conductive mount, 202 ... Optical system mounting part, 20 Planar portion of ... collimator lens, 204 ... laser light, 205 ... collimator lens 203.

Abstract

[Problème] L'invention a pour objet de faire en sorte qu'un mode transverse soit unifié ou soit un mode d'ordre inférieur, tout en accroissant la production d'oscillations d'un laser. [Solution] La présente invention concerne un laser à semi-conducteur du type à résonateur externe comportant: une puce de laser à semi-conducteur; et un système optique externe. La puce de laser à semi-conducteur est un laser à semi-conducteur du type à surface large doté d'une fonction de confinement optique de telle façon que, dans un guide d'ondes optique, un mode transverse devient multimode dans la direction dans le plan du substrat du laser à semi-conducteur du type à surface large et un mode transverse devient un mode unique dans une direction perpendiculaire au substrat. Un revêtement à haute réflectivité est appliqué à une première surface d'extrémité et un revêtement antireflet est appliqué à une deuxième surface d'extrémité, la deuxième surface d'extrémité est couplée optiquement au système optique externe, et un filtre spatial servant à limiter un chemin optique dans la direction dans le plan du substrat de la puce de laser à semi-conducteur est incorporé dans le système optique externe.
PCT/JP2015/081674 2014-11-20 2015-11-11 Laser à semi-conducteur du type à résonateur externe WO2016080252A1 (fr)

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JP2021506115A (ja) * 2018-10-15 2021-02-18 中国科学院理化技術研究所 半導体レーザ
JP2021506100A (ja) * 2017-11-01 2021-02-18 ヌブル インク マルチｋＷクラスの青色レーザーシステム
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