WO2016074372A1 - Amoled显示面板及其制作方法、显示装置 - Google Patents

Amoled显示面板及其制作方法、显示装置 Download PDF

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WO2016074372A1
WO2016074372A1 PCT/CN2015/073339 CN2015073339W WO2016074372A1 WO 2016074372 A1 WO2016074372 A1 WO 2016074372A1 CN 2015073339 W CN2015073339 W CN 2015073339W WO 2016074372 A1 WO2016074372 A1 WO 2016074372A1
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Prior art keywords
layer
display panel
organic light
emitting layer
electrode
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French (fr)
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陈鹏
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an AMOLED display panel, a method for fabricating the same, and a display device.
  • An OLED (Organic Light Emitting Diode) display is a self-luminous display. According to the driving method, it can be divided into PMOLED (Passive Matrix Driving OLED) display and AMOLED (Active Matrix Driving O LED) display.
  • PMOLED Passive Matrix Driving OLED
  • AMOLED Active Matrix Driving O LED
  • AMOLED displays are increasingly being used in a variety of high performance display fields due to their low manufacturing cost, high response speed, power saving, DC drive for portable devices, and large operating temperature range.
  • a WOLE D+CF method ie, a method of white light + color filter
  • a color filter is disposed on a color film substrate, and then The color film substrate and the array substrate are paired.
  • the bottom emission type AMOLED display may include an array substrate and a color film substrate and an OLED display structure respectively located on both sides of the array substrate.
  • the color filter substrate is disposed on a side surface of the array substrate near the light emitting side of the AMOLED display, so that light is emitted from the array substrate through the color filter substrate.
  • the color filter substrate in addition to the need to increase the color filter substrate, in order to improve the reliability of the AMOLED panel, the color filter substrate also needs to be provided with a base substrate made of glass.
  • the thickness of the base substrate is about 500 ⁇ m, which greatly increases the thickness of the AMOLED panel, which is disadvantageous for the slimness of the AMOLED panel.
  • An object of the present invention is to provide an AMOLED display panel, a manufacturing method thereof, and a display device, which can solve the problem of a large thickness of a bottom emission type AMOLED panel with full color display.
  • an AMOLED display panel is provided in accordance with an aspect of the present invention.
  • the AMOLED display panel includes: an array substrate having a plurality of sub-pixels; a pixel defining layer on a surface of the array substrate; and a plurality of OLED display structures in one-to-one correspondence with the sub-pixels.
  • the pixel defining layer comprises a color film layer; and the color film layer comprises a plurality of color cells having different colors, the plurality of color cells being in one-to-one correspondence with the plurality of sub-pixels.
  • the pixel defining layer is composed only of the color film layer.
  • each OLED display structure includes: a first electrode, a second electrode opposite to the first electrode, and an organic material disposed between the first electrode and the second electrode Functional layer
  • the organic material functional layer includes a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer which are sequentially disposed from the first electrode to the second electrode.
  • the second electrode is formed of a material having high reflectivity.
  • the material includes at least one of metallic aluminum or metallic silver.
  • the first electrode is connected to a drain of a thin film transistor in the sub-pixel through a via provided in the pixel defining layer.
  • the organic light emitting layer includes a red organic light emitting layer, a green organic light emitting layer, and a blue organic light emitting layer which are sequentially stacked in an arbitrary order.
  • the organic light emitting layer includes a red organic light emitting layer, a green organic light emitting layer, and a blue organic light emitting layer which are arranged side by side in any order.
  • the thickness of the organic material functional layer is equal to the thickness of the pixel defining layer.
  • the color film layer has a thickness ranging from 1 to 4 ⁇ m.
  • the color film layer has a thickness ranging from 3 to 4 ⁇ m.
  • a display device is also provided.
  • the display device includes the AMOLED display panel described above.
  • a method of fabricating an AMOLED display panel includes the steps of: forming an array substrate having a plurality of sub-pixels; forming a pixel defining layer on a surface of the array substrate, the pixel defining layer comprising a color film layer; wherein the color film layer comprises different colors a plurality of color cells, wherein the plurality of color cells are in one-to-one correspondence with the plurality of sub-pixels; and forming a plurality of OLED display structures in one-to-one correspondence with the plurality of sub-pixels.
  • the step of forming the pixel defining layer includes forming a pixel defining layer composed only of the color film layer on a surface of the array substrate.
  • the step of forming an OLED display structure includes: forming a via in the pixel defining layer; and forming an OLED display structure in the via.
  • the step of forming an OLED display structure includes: forming a first electrode; forming an organic material functional layer on the first electrode; and forming a second electrode on the functional layer of the organic material.
  • the step of forming the functional layer of the organic material includes sequentially forming a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer by an evaporation method.
  • the step of forming the organic light-emitting layer includes forming a red organic light-emitting layer, a green organic light-emitting layer, and a blue organic light-emitting layer which are stacked one on another in an arbitrary order by an evaporation method.
  • the step of forming the organic light-emitting layer includes forming a red organic light-emitting layer, a green organic light-emitting layer, and a blue organic light-emitting layer which are layered side by side in an arbitrary order by a mask exposure method.
  • the step of forming the second electrode comprises: having a high A material of reflectivity forms the second electrode.
  • inventions of the present invention provide an AMOLED display panel, a method of fabricating the same, and a display device including the same.
  • the AMOLED display panel includes: an array substrate having a plurality of sub-pixels; a pixel defining layer on a surface of the array substrate; and a plurality of OLED display structures corresponding to the sub-pixels in one-to-one correspondence.
  • the pixel defining layer comprises a color film layer; and the color film layer comprises a plurality of color cells having different colors, such as red, green or blue, the plurality of color cells and the plurality of sub-pixels A correspondence.
  • three sub-pixels corresponding to the red, green, and blue color cells in turn can constitute one pixel unit, thereby realizing full color display of the AMOLE D display panel. Since the pixel defining layer is formed by a color film layer, it is not necessary to add a color film substrate on the side surface of the array substrate close to the light emitting side of the AMOLED display panel. Thereby, the thickness of the AMOLED panel can be reduced.
  • FIG. 1a is a schematic structural diagram of an AMOLED display panel according to an embodiment of the present invention.
  • 1b is a schematic top plan view of an array substrate in the prior art
  • 1c is a schematic structural diagram of a pixel defining layer according to an embodiment of the present disclosure
  • FIG. 2a is a schematic structural diagram of another AMOLED display panel according to an embodiment of the present invention.
  • FIG. 2b is a schematic structural diagram of another AMOLED display panel according to an embodiment of the present invention.
  • 3a is a schematic structural diagram of an organic light emitting layer in an OLED display structure according to an embodiment of the present invention.
  • 3b is a schematic structural diagram of an organic light emitting layer in another OLED display structure according to an embodiment of the present disclosure
  • FIG. 4a is a schematic structural diagram of another pixel defining layer according to an embodiment of the present disclosure.
  • FIG. 4b is a schematic structural diagram of still another AMOLED display panel according to an embodiment of the present disclosure.
  • FIG. 5 is a flowchart of a method for fabricating an AMOLED display panel according to an embodiment of the present invention.
  • 10-array substrate 100-sub-pixel; 101-pixel electrode; 110-substrate substrate; 111-gate insulating layer; 112-insulating layer; 20-pixel defining layer; 201-color unit; 202-black matrix; - OLED display structure; 301 - first electrode; 302 - second electrode; 303 - hole injection layer; 304 - hole transport layer; 305 - organic light-emitting layer; 306 - electron transport layer; 307 - electron injection layer; - organic material functional layer; 40-TFT; 401-gate; 402-drain; 403-source.
  • An embodiment of the present invention provides an AMOLED display panel, as shown in FIG. 1a, which may include an array substrate 10 having a plurality of sub-pixels 100, and a pixel defining layer 20 on the surface of the array substrate 10, as shown in FIG. 1b. And an O LED display structure 30 that is in one-to-one correspondence with the sub-pixels 100 on the surface of the pixel defining layer 20. The white light emitted by the OLED display structure 30 is incident on the array substrate 10 .
  • the pixel defining layer 20 may include a color film layer; wherein the color film layer may include a plurality of color cells 201 having different colors, and the color cells 201 are in one-to-one correspondence with the sub-pixels 100.
  • the pixel defining layer 20 may be composed of a color film layer and a black matrix 202 which are disposed at intervals as shown in FIG. 1c.
  • the color unit 201 is in one-to-one correspondence with the pixel electrode 101 of the sub-pixel 100, and the black matrix 202 corresponds to a region of the sub-pixel 100 other than the pixel electrode 101.
  • the black matrix 202 can block the control circuit located on the array substrate 10 (for example, the TFT40 In the area), light is prevented from coming into the above control circuit, causing damage to the line.
  • An embodiment of the present invention provides an AMOLED display panel, which may include an array substrate having a plurality of sub-pixels, a pixel defining layer on the surface of the array substrate, and an OLED display structure corresponding to the sub-pixels on the surface of the pixel defining layer, the OLED The white light emitted from the display structure is incident on the array substrate, thereby constituting a bottom emission type AMOLED display panel.
  • the pixel defining layer includes a color film layer; wherein the color film layer includes a plurality of color cells having different colors (for example, red, green, or blue), and the color cells are in one-to-one correspondence with the sub-pixels.
  • three sub-pixels corresponding to the red, green, and blue color cells in turn can constitute one pixel unit, thereby realizing full color display of the AMOLED display panel. Since the pixel defining layer is formed by a color film layer, it is not necessary to add a color film substrate on the side surface of the array substrate close to the light emitting side of the AMOLED display panel. Thereby the thickness of the AMOL ED panel can be reduced.
  • the array substrate 10 (shown in FIG. 1b in plan view) is defined by a plurality of horizontally intersecting gate lines Gate and data lines Date to form a plurality of sub-pixels 100.
  • a thin film transistor 40 (TFT) is disposed in each of the sub-pixels 100.
  • the thin film transistor 40 is a semiconductor unit having a switching characteristic, which may be a top gate type or a bottom gate type, which is not limited herein.
  • the top gate and the bottom gate are defined by the positions of the gate 401 and the drain 402 and the source 403 with respect to the substrate. For example, when the gate electrode 401 is closer to the base substrate 110 of the array substrate with respect to the drain electrode 402 and the source electrode 403, it is the bottom gate type thin film transistor 40. When the drain 402 and the source 40 are closer to the base substrate 110 of the array substrate with respect to the gate 401, it is the top gate thin film transistor 40. In the embodiment of the present invention, the bottom gate thin film transistor 40 is taken as an example for description.
  • the pixel defining layer 20 of the color film layer may include a plurality of color cells 201 of different colors.
  • the color of the color unit 201 may be red (R), green (G), or blue (B).
  • R red
  • G green
  • B blue
  • the three sub-pixels of the array substrate 10 corresponding to the red color unit 201, the green color unit 201, and the blue color unit 201 in sequence may constitute one pixel unit.
  • the color unit 201 may be red (R), green a color unit (G), a blue color unit (B), and a transparent color unit 201 not filled with any color, the transparent color unit enabling white light emitted by the OLED to be processed without filtering color, thereby forming a white color Color unit 201.
  • the four sub-pixels of the array substrate 10 corresponding to the red color unit 201, the green color unit 201, the blue color unit 201, and the white color unit 201 in sequence may constitute one pixel unit.
  • the OLED display structure 30, as shown in FIG. 2a, may include a first electrode 301, a hole injection layer 303, a hole transport layer 304, an organic light-emitting layer 305, and an electron transport layer 306, which are located on the surface of the pixel defining layer 20.
  • the hole injection layer 303, the hole transport layer 304, the organic light-emitting layer 305, the electron transport layer 306, and the electron injection layer 307 are sequentially disposed from the first electrode 301 to the second electrode 302 and may constitute the organic material functional layer 310.
  • the position of the OLED display structure 30 may be correspondingly disposed on the surface of the pixel defining layer 20, and a via hole may be formed, so that the first electrode 301 can pass through the via hole and the thin film transistor 40 in the sub-pixel 100.
  • the drains 402 are connected.
  • the first electrode 301 can also be used as the pixel electrode 101 on the array substrate 10.
  • the first electrode 301 may be formed of a transparent conductive material such as indium tin oxide or indium zinc oxide.
  • the second electrode 302 may be made of a metal material.
  • the second electrode 302 is made of a material having high reflectance (for example, at least one of metal aluminum or metallic silver), when the display panel is in a non-operating state, it can be used as a mirror. Thereby, a mirror display can be prepared.
  • the thickness of the organic material functional layer 310 may be equal to the thickness of the pixel defining layer 20.
  • an entire second surface electrode 302 having a flat surface can be formed on the surface of the pixel defining layer 20.
  • the plurality of OLED display structures 30 share a second electrode 302. Since the second electrode 30 on the AMOLED display panel can be completed by one fabrication process, such as coating or sputtering, and the surface of the formed second electrode 302 is flat, it is possible to reduce the height inconsistency due to the formation of the total reflection layer during the mirror display process. The resulting specular reflection ghost phenomenon occurs.
  • FIG. 2b shows an AMOLED display panel having another structure in which an insulating layer 112 between the pixel electrode 101 and the drain 402 of the TFT 40 is further included in the AMOLED display panel.
  • the insulating layer 112 may be formed of a transparent resin material to prevent leakage of the TFT 40, thereby adversely affecting the display panel.
  • the organic light-emitting layer 305 of the OLED display structure 30 can be disposed on the surface of the hole transport layer 304 and stacked in any order, as shown in FIG. 3a.
  • the red organic light-emitting layer (R), the green organic light-emitting layer (G), and the blue organic light-emitting layer (B) may be formed, for example, by an evaporation process.
  • a red organic light-emitting layer may be evaporated on the surface of the hole transport layer 304; then a green organic light-emitting layer is evaporated on the surface of the red organic light-emitting layer; The surface of the green organic light-emitting layer is vapor-deposited with a blue organic light-emitting layer.
  • the organic light-emitting layer 305 having other lamination order can be produced by a similar method and will not be described herein.
  • the organic light emitting layer 305 of the OLED display structure 30 may include a red organic light emitting layer (R), a green organic light emitting layer (G), and a blue organic light emitting layer arranged side by side in any order as shown in FIG. 3b. (B).
  • R red organic light emitting layer
  • G green organic light emitting layer
  • B blue organic light emitting layer
  • a strip-shaped red organic light-emitting layer (R), a green organic light-emitting layer (G), or a blue organic light-emitting layer (B) may be separately formed by a three-mask exposure process using the same mask.
  • the mask is required to be displaced to avoid superposition of different organic light-emitting layers.
  • the thickness of the color film layer can be controlled within a range of 1 to 4 ⁇ m. .
  • the thickness of the color film layer can be controlled in the range of 2-4 um, more preferably in the range of 3-4 um.
  • the present invention also provides another AMOLED display panel structure, as shown in FIG. 4b.
  • the pixel defining layer 20, as shown in FIG. 4a is composed only of a color film layer, and the color cells 201 of the color film layer are in one-to-one correspondence with the sub-pixels 100.
  • the second electrode 302 in the OLED display structure is made of metal silver or metal aluminum having a relatively high reflectance, in the process of realizing the mirror display, since there is no black matrix 202 in the display panel. Blocking enables all of the light incident on the second electrode 302 to be reflected, so that specular total reflection can be achieved. Improve the mirror effect when the display panel is used as a mirror.
  • An embodiment of the present invention provides a display device including any of the AMOLED display panels as described above, and the AMOLED display panel has the same structure and advantageous effects as the AMOLED display panel described in the foregoing embodiments. Since the foregoing embodiment has described the specific structure and beneficial effects of the AMOLED display panel in detail, it will not be described herein.
  • the display device may be any product or component having a display function such as a display, a television, a digital photo frame, a mobile phone or a tablet computer.
  • An embodiment of the present invention provides a method for fabricating an AMOLED display panel. As shown in FIG. 5, the method may include the following steps:
  • Step S101 Forming an array substrate 10 having a plurality of sub-pixels 100.
  • the gate electrode 401, the gate insulating layer 111, the source/drain metal layer, the source of the TFT 40, the drain 402 of the TFT 40, and the insulating layer may be sequentially formed on the surface of the base substrate 110 made of glass by a patterning process.
  • the patterning process may include a photolithography step, or may include a photolithography step and an etching step. Further, the patterning process may further include printing, inkjet, and the like for forming a predetermined pattern.
  • the photolithography process refers to a process of forming a pattern by a process including film formation, exposure, development, or the like, using a photoresist, a mask, an exposure machine, or the like. The appropriate structure can be selected according to the structure formed in the present invention. Composition process.
  • Step S102 forming a pixel defining layer 20 on the surface of the array substrate 10, the pixel defining layer 20 comprising a color film layer; wherein the color film layer comprises a plurality of color cells 201 having different colors, the color cell 201 and the array substrate
  • the sub-pixels 100 on 10 correspond one-to-one.
  • the pixel defining layer 20 may be a pixel defining layer 20 formed by a plurality of spaced color film layers and black matrixes 202.
  • the color cells 201 are in one-to-one correspondence with the pixel electrodes 101 of the sub-pixels 100 on the array substrate 10, and the black matrix 202 corresponds to a region of the sub-pixel 100 other than the pixel electrode 101.
  • the black matrix 202 can block the control circuit (such as the area where the TFT 40 is located) on the array substrate 10, and prevent the light from being irradiated to the control circuit, thereby causing damage to the line.
  • the black matrix 202 as shown in FIG. 1a may be formed on the surface of the substrate on which the pixel electrode 101 (or the first electrode 301 of the OLED display structure 30) is formed, and then formed on the surface of the black matrix 202 by a patterning process.
  • the color of the color unit 201 can be red, green, or blue.
  • the three sub-pixels of the array substrate 10 corresponding to the red color unit 201, the green color unit 201, and the blue color unit 201 in sequence may constitute one pixel unit.
  • the color unit 201 may be a red color unit (R), a green color unit (G), a blue color unit (B), and a transparent color unit 201 that is not filled with any color, the transparency
  • the color unit causes the white light emitted by the OLED to be processed without a filter color, thereby constituting the white color unit 201.
  • the four sub-pixels of the array substrate 10 corresponding to the red color unit 201, the green color unit 201, the blue color unit 201, and the white color unit 201 in sequence may constitute one pixel unit.
  • the strip-shaped red color unit 201, the green color unit 201 or the blue color unit 201, and the transparent color unit 201 for emitting white light may be separately formed by the four mask exposure processes using the same mask. Among them, in the mask exposure process other than the first mask exposure process, the mask plate needs to be shifted to avoid color unit superposition of different colors.
  • Step S103 forming an OLED corresponding to the sub-pixel 100 one by one on the surface of the pixel defining layer 20 Display structure 30.
  • the white light emitted by the OLED display structure 30 is incident on the array substrate 10.
  • the pixel electrode 101 that has been formed may be used as the first electrode 301 of the OLED display structure 30, and then the hole injection layer 303 is formed on the surface of the first electrode 301 by evaporation.
  • an entire metal layer is formed on the surface of the structure formed after the above steps are completed by a coating or sputtering process to constitute the second electrode 302 of the OLED display structure 30.
  • the metal material constituting the second electrode 302 may be metallic aluminum or metallic silver, so that a total reflection layer can be formed to achieve mirror display.
  • the organic light-emitting layer 305 of the OLED display structure 30 may include red organic light-emitting layers arranged on the surface of the hole transport layer 304 in an arbitrary order ( R), a green organic light-emitting layer (G), and a blue organic light-emitting layer (B).
  • the red organic light-emitting layer (R), the green organic light-emitting layer (G), and the blue organic light-emitting layer (B) may be formed by an evaporation process.
  • a red organic light-emitting layer may be deposited on the surface of the hole transport layer 304; then a green organic light-emitting layer may be evaporated on the surface of the red organic light-emitting layer; next, on the surface of the green organic light-emitting layer.
  • a layer of blue organic light-emitting layer is evaporated.
  • the organic light-emitting layer 305 having other lamination order can be produced by a similar method and will not be described herein.
  • the organic light-emitting layer 305 of the OLED display structure 30 may be configured to include a red organic light-emitting layer (R), a green organic light-emitting layer (G), and a blue layer arranged side by side in any order.
  • a strip-shaped red organic light-emitting layer (R), a green organic light-emitting layer (G), or a blue organic light-emitting layer (B) may be separately formed by a three-mask exposure process using the same mask. Wherein, in another two mask exposure processes other than the first mask exposure process, the mask plate needs to be shifted to avoid different organic light-emitting layer stacking.
  • Embodiments of the present invention provide a method for fabricating an AMOLED display panel, including forming an array substrate having a plurality of sub-pixels. Then, forming a pixel defining layer on the surface of the array substrate, the pixel boundary
  • the fixed layer includes a color film layer; wherein the color film layer includes a plurality of color cells of different colors, the color cells corresponding to the sub-pixels on the array substrate.
  • three sub-pixels corresponding to the red, green, and blue color cells in turn can constitute one pixel unit, thereby realizing full color display of the AMOLED display panel.
  • an OLED display structure corresponding to the sub-pixels is formed on the surface of the pixel defining layer.
  • the white light emitted by the OLED display structure is incident on the array substrate, thereby forming a bottom emission type AMOLED display panel. Since the pixel defining layer is formed by a color film layer, it is not necessary to add a color film substrate on the side surface of the array substrate close to the light emitting side of the AMOLED display panel. Thereby, the thickness of the AMOLED panel can be reduced.
  • the method of forming the pixel defining layer 20 may include:
  • a pixel defining layer 20 composed of only the color film layer 201 is formed on the surface of the array substrate 10 as shown in FIG. 4a, wherein the color unit 201 is in one-to-one correspondence with the sub-pixel 100.
  • the second electrode 302 in the O LED display structure is made of metallic silver or metallic aluminum having a higher reflectivity, in the process of realizing the mirror display, since there is no black matrix 202 blocking in the display panel, It is possible to cause all of the light incident to the second electrode 302 to be reflected, so that specular total reflection can be achieved. Improve the mirror effect when the display panel is used as a mirror.

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Abstract

一种AMOLED显示面板及其制作方法、显示装置，涉及显示技术领域，能够解决全彩显的底发射式AMOLED面板厚度较大的问题。其中，AMOLED显示面板，包括具有多个亚像素的阵列基板（10）、位于阵列基板表面的像素界定层（20），以及位于像素界定层表面的OLED显示结构（30），OLED显示结构发出的白光入射至阵列基板，像素界定层由彩色膜层构成；其中，彩色膜层包括多个不同颜色的彩色单元，彩色单元与亚像素一一对应。

Description

AMOLED显示面板及其制作方法、显示装置 技术领域
本发明涉及显示技术领域，尤其涉及一种AMOLED显示面板及其制作方法、显示装置。
背景技术
OLED(Organic Light Emitting Diode，有机发光二极管)显示器是一种自发光显示器。按驱动方式可以分为PMOLED(Passive Matrix Driving OLED，无源矩阵驱动有机发光二极管)显示器和AMOLED(Active Matrix Driving O LED，有源矩阵驱动有机发光二极管)显示器两种。由于AMOLED显示器具有低制造成本、高应答速度、省电、可用于便携式设备的直流驱动、工作温度范围大等等优点，从而越来越多地被应用于各种高性能显示领域当中。
现有技术中，为了实现AMOLED显示器的全彩化技术，可以采用WOLE D+CF法(即白光+彩色滤光片的方法)，通常是将彩色滤光片设置在彩膜基板上，然后将彩膜基板与阵列基板进行对盒。
具体的，底发射式AMOLED显示器，可以包括阵列基板以及分别位于阵列基板两侧的彩膜基板和OLED显示结构。其中，对于底发射式AMOLED显示器而言，彩膜基板设置于阵列基板靠近AMOLED显示器出光侧的一侧表面，以使得光线从阵列基板经由彩膜基板发出。
然而，在采用WOLED+CF法的过程中，除了需要增加彩膜基板以外，为了提高AMOLED面板的信赖性，彩膜基板还需要设置由玻璃制成的衬底基板。通常衬底基板的厚度在500μm左右，这使得AMOLED面板的厚度大大增加，从而不利于AMOLED面板的轻薄化。
发明内容
本发明的目的在于提供一种AMOLED显示面板及其制作方法、显示装置，能够解决全彩显的底发射式AMOLED面板厚度较大的问题。为达到上述目的，根据本发明的一个方面提供了一种AMOLED显示面板。该AMOLED显示面板包括：具有多个亚像素的阵列基板；位于所述阵列基板表面的像素界定层；和与所述亚像素一一对应的多个OLED显示结构。其中，所述像素界定层包括彩色膜层；并且所述彩色膜层包括具有不同颜色的多个彩色单元，所述多个彩色单元与所述多个亚像素一一对应。
根据本发明的一个示例性实施例，所述像素界定层仅由所述彩色膜层构成。
根据本发明的另一示例性实施例，每个OLED显示结构包括：第一电极、与所述第一电极相对的第二电极，设置在所述第一电极和第二电极之间的有机材料功能层；
其中，所述有机材料功能层包括从所述第一电极到所述第二电极依次设置的空穴注入层、空穴传输层、有机发光层、电子传输层以及电子注入层。
根据本发明的另一示例性实施例，所述第二电极由具有高反射率的材料形成。
根据本发明的另一示例性实施例，所述材料包括金属铝或金属银中的至少一种。
根据本发明的另一示例性实施例，所述第一电极通过设置在像素界定层中的过孔与所述亚像素中的薄膜晶体管的漏极相连接。
根据本发明的另一示例性实施例，所述有机发光层包括以任意顺序依次层叠设置的红色有机发光层、绿色有机发光层以及蓝色有机发光层。
根据本发明的另一示例性实施例，所述有机发光层包括以任意顺序并排设置成一层的红色有机发光层、绿色有机发光层以及蓝色有机发光层。
根据本发明的另一示例性实施例，所述有机材料功能层的厚度与所述像素界定层的厚度相等。
根据本发明的另一示例性实施例，所述彩色膜层的厚度范围为1～4μm。 优选地，所述彩色膜层的厚度范围为3～4μm。
根据本发明的另一方面，还提供了一种显示装置。该显示装置包括上文所述的AMOLED显示面板。
根据本发明的又一个方面，提供了一种AMOLED显示面板的制作方法。该方法包括以下步骤：形成具有多个亚像素的阵列基板；在所述阵列基板的表面形成像素界定层，所述像素界定层包括彩色膜层；其中，所述彩色膜层包括具有不同颜色的多个彩色单元，所述多个彩色单元与所述多个亚像素一一对应；和形成与所述多个亚像素一一对应的多个OLED显示结构。
根据所述方法的一个示例性实施例，在亚像素包括像素电极的情况下，形成像素界定层的步骤包括：在所述阵列基板的表面形成仅由所述彩色膜层构成的像素界定层。
根据所述方法的另一示例性实施例，形成OLED显示结构的步骤包括：在像素界定层中形成过孔；和在所述过孔中形成OLED显示结构。
根据所述方法的另一示例性实施例，形成OLED显示结构的步骤包括：形成第一电极；形成位于第一电极上的有机材料功能层；和形成位于有机材料功能层上的第二电极。
根据所述方法的另一示例性实施例，形成有机材料功能层的步骤包括：通过蒸镀法依次形成空穴注入层、空穴传输层、有机发光层、电子传输层以及电子注入层。
根据所述方法的另一示例性实施例，形成有机发光层的步骤包括：通过蒸镀法形成以任意次序彼此层叠设置的红色有机发光层、绿色有机发光层和蓝色有机发光层。
根据所述方法的另一示例性实施例，形成有机发光层的步骤包括：通过掩膜曝光法形成以任意顺序并排设置成一层的红色有机发光层、绿色有机发光层和蓝色有机发光层。
根据所述方法的另一示例性实施例，形成第二电极的步骤包括：用具有高 反射率的材料形成所述第二电极。
综上所述，本发明的实施例提供一种AMOLED显示面板及其制作方法、以及包括这种显示面板的显示装置。其中，该AMOLED显示面板包括：具有多个亚像素的阵列基板；位于所述阵列基板表面的像素界定层；和与所述亚像素一一对应的多个OLED显示结构。其中，所述像素界定层包括彩色膜层；并且所述彩色膜层包括具有不同颜色的多个彩色单元，例如红色、绿色或蓝色，所述多个彩色单元与所述多个亚像素一一对应。这样一来，依次对应红色、绿色以及蓝色彩色单元的三个亚像素可以构成一个像素单元，从而实现AMOLE D显示面板的全彩显示。由于像素界定层采用彩色膜层构成，因此无需在阵列基板靠近AMOLED显示面板出光侧的一侧表面上增设彩膜基板。从而可以减小AMOLED面板的厚度。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1a为本发明实施例提供的一种AMOLED显示面板的结构示意图；
图1b为现有技术中的一种阵列基板的俯视结构示意图；
图1c为本发明实施例提供的一种像素界定层的结构示意图；
图2a为本发明实施例提供的另一种AMOLED显示面板的结构示意图；
图2b为本发明实施例提供的另一种AMOLED显示面板的结构示意图；
图3a为本发明实施例提供的一种OLED显示结构中的有机发光层的结构示意图；
图3b为本发明实施例提供的另一种OLED显示结构中的有机发光层的结构示意图；
图4a为本发明实施例提供的另一种像素界定层的结构示意图；
图4b为本发明实施例提供的又一种AMOLED显示面板的结构示意图；
图5为本发明实施例提供的一种AMOLED显示面板的制作方法流程图。
附图标记：
10-阵列基板；100-亚像素；101-像素电极；110-衬底基板；111-栅极绝缘层；112-绝缘层；20-像素界定层；201-彩色单元；202-黑矩阵；30-OLED显示结构；301-第一电极；302-第二电极；303-空穴注入层；304-空穴传输层；305-有机发光层；306-电子传输层；307-电子注入层；310-有机材料功能层；40-TFT；401-栅极；402-漏极；403-源极。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明实施例提供了一种AMOLED显示面板，如图1a所示，可以包括如图1b所示的，具有多个亚像素100的阵列基板10、位于所述阵列基板10表面的像素界定层20，以及位于像素界定层20表面的与亚像素100一一对应的O LED显示结构30。其中，所述OLED显示结构30发出的白光入射至阵列基板10。
此外，像素界定层20可以包括彩色膜层；其中，彩色膜层可以包括多个具有不同颜色的彩色单元201，所述彩色单元201与亚像素100一一对应。
具体的，例如像素界定层20可以由如图1c所示的间隔设置的彩色膜层和黑矩阵202构成。所述彩色单元201与亚像素100的像素电极101一一对应，所述黑矩阵202与所述亚像素100中除了像素电极101以外的区域相对应。这样一来，黑矩阵202能够遮挡位于阵列基板10上的控制电路(例如TFT40所 在的区域)，防止光线照射至上述控制电路，造成线路的损坏。
本发明实施例提供一种AMOLED显示面板，可以包括具有多个亚像素的阵列基板、位于阵列基板表面的像素界定层，以及位于像素界定层表面的与亚像素一一对应的OLED显示结构，OLED显示结构发出的白光入射至阵列基板，从而构成底发射式的AMOLED显示面板。此外，像素界定层包括彩色膜层；其中，彩色膜层包括多个具有不同颜色(例如红色、绿色或蓝色)的彩色单元，所述彩色单元与所述亚像素一一对应。这样一来，依次对应红色、绿色以及蓝色彩色单元的三个亚像素可以构成一个像素单元，从而实现AMOLED显示面板的全彩显示。由于像素界定层采用彩色膜层构成，因此无需在阵列基板靠近AMOLED显示面板出光侧的一侧表面上增设彩膜基板。从而可以减小AMOL ED面板的厚度。
需要说明的是，第一、由阵列基板10(俯视图如图1b所示)由多条横纵交叉的栅线Gate和数据线Date界定形成多个亚像素100。每个亚像素100中设置有一个薄膜晶体管40(Thin Film Transistor，简称TFT)。薄膜晶体管40是一种具有开关特性的半导体单元，其可以是顶栅型，也可以是底栅型，在此不作限定。
其中，顶栅、底栅是栅极401与漏极402和源极403相对于衬底基板的位置而定义的。例如，当栅极401相对于漏极402和源极403而言，更靠近阵列基板的衬底基板110时，为底栅型薄膜晶体管40。当漏极402和源极40相对于栅极401而言，更靠近阵列基板的衬底基板110时，为顶栅型薄膜晶体管40。本发明的实施例中，是以底栅型薄膜晶体管40为例进行的说明。
第二、彩色膜层构成的像素界定层20可以包括多个不同颜色的彩色单元201。例如，对于RGB显示装置而言，彩色单元201的颜色可以是红色(R)、绿色(G)或蓝色(B)。这样，阵列基板10上依次对应红色彩色单元201、绿色彩色单元201以及蓝色彩色单元201的三个亚像素可以构成一个像素单元。
又例如，对于RGBW显示装置而言，彩色单元201可以是红色(R)、绿 色彩色单元(G)、蓝色彩色单元(B)以及不填充任何颜色的、呈透明的彩色单元201，所述透明的彩色单元使得OLED发出的白色光线能够不经过滤色处理，从而构成白色彩色单元201。这样，阵列基板10上依次对应红色彩色单元201、绿色彩色单元201、蓝色彩色单元201以及白色彩色单元201的四个亚像素可以构成一个像素单元。
第三、OLED显示结构30，如图2a所示，可以包括位于像素界定层20表面的第一电极301、空穴注入层303、空穴传输层304、有机发光层305、电子传输层306、电子注入层307以及第二电极302。其中，空穴注入层303、空穴传输层304、有机发光层305、电子传输层306、电子注入层307从第一电极301至第二电极302依次布置并可以构成有机材料功能层310。
一方面，为了简化制作工艺，可以在像素界定层20的表面对应设置所述OLED显示结构30的位置，制作过孔，使得第一电极301可以通过上述过孔与亚像素100中的薄膜晶体管40的漏极402相连接。这样一来，第一电极301还可以作为阵列基板10上的像素电极101使用。
另一方面。对于底发射式AMOLED显示面板而言，第一电极301可以采用透明导电材料，例如氧化铟锡或氧化铟锌构成。而第二电极302可以采用金属材料构成。当构成第二电极302由具有高反射率的材料(例如金属铝或金属银中的至少一种)制成时，当显示面板处于非工作状态时，其可以当做镜子使用。从而能够制备出镜面显示器。
此外，在制作OLED显示结构30时，如图2b所示，有机材料功能层310的厚度可以等于像素界定层20的厚度。这样一来，可以在像素界定层20的表面制作一整层表面平坦的第二电极302。多个OLED显示结构30公用一个第二电极302。由于AMOLED显示面板上的第二电极30可通过一次制作工艺，例如涂覆或溅射完成，且形成的第二电极302表面平坦，因此能够在镜面显示过程中减少由于构成全反射层的高度不一致而导致的镜面反射虚影现象的产生。
图2b示出了具有另一种结构的AMOLED显示面板，其中该AMOLED显示面板中还包括位于像素电极101与TFT40的漏极402之间的绝缘层112。所述绝缘层112可以采用透明树脂材料构成，以防止TFT40发生漏电，从而对显示面板造成不良影响。
第四、由于上述OLED显示结构30能够发白光，因此，OLED显示结构30的有机发光层305如图3a所示，可以包括位于所述空穴传输层304表面的，以任意顺序依次层叠设置的红色有机发光层(R)、绿色有机发光层(G)以及蓝色有机发光层(B)。
所述红色有机发光层(R)、绿色有机发光层(G)以及蓝色有机发光层(B)例如可以采用蒸镀工艺形成。在一个示例性的实施例中，可以先在空穴传输层304表面的蒸镀一层红色有机发光层；然后在红色有机发光层的表面蒸镀一层绿色有机发光层；接下来，在所述绿色有机发光层的表面蒸镀一层蓝色有机发光层。具有其它层叠顺序的有机发光层305可通过类似的方法制得，此处不再赘述。
可选择地，OLED显示结构30的有机发光层305可以如图3b所示包括：以任意顺序并排设置成一层的红色有机发光层(R)、绿色有机发光层(G)以及蓝色有机发光层(B)。
具体的，可以采用相同的掩膜版，通过三次掩膜曝光工艺分别形成条状的红色有机发光层(R)、绿色有机发光层(G)或者蓝色有机发光层(B)。在除第一次掩膜曝光工艺以外的另外两次掩膜曝光工艺中，需要对掩膜版进行移位，以避免不同的有机发光层叠加。
第五、为了提高由彩色膜层构成的像素界定层20的滤光效果，可将彩色膜层的厚度控制在1～4μm的范围内。。优选地，可将彩色膜层的厚度控制在2-4um的范围内，更加优选地，3-4um的范围内。这样，当采用彩色膜层构成像素界定层20时，膜层的厚度增加，增大了阵列基板10上的数据线Data与OL ED显示结构30中第二电极302的距离，减小了数据线Data与第二电极302 构成的耦合电容，进而降低了显示面板的功耗。
为了使得AMOLED显示面板被用作镜面显示时，其性能更加优越，本发明还提供另外一种AMOLED显示面板的结构，如图4b所示。其中，所述像素界定层20，如图4a所示，仅由彩色膜层构成，所述彩色膜层的彩色单元201与亚像素100一一对应。这样一来，当OLED显示结构中的第二电极302采用具有较高的反射率较高的金属银或金属铝制成时，在实现镜面显示的过程中，由于显示面板中没有黑矩阵202的阻挡，能够使得所有入射至第二电极302的光线被反射，从而可以实现镜面全反射。提高显示面板作为镜子使用时的镜面效果。
本发明实施例提供一种显示装置，包括如上所述的任意一种AMOLED显示面板，该AMOLED显示面板具有与前述实施例所述的AMOLED显示面板相同的结构和有益效果。由于前述实施例已经对AMOLED显示面板具体结构和有益效果进行了详细的描述，因此此处不再赘述。
需要说明的是，显示装置可以为显示器、电视、数码相框、手机或平板电脑等任何具有显示功能的产品或者部件。
本发明实施例提供了一种AMOLED显示面板的制作方法，如图5所示，该方法可以包括如下步骤：
步骤S101：形成具有多个亚像素100的阵列基板10。
具体的，可以在由玻璃构成的衬底基板110的表面通过构图工艺，依次形成TFT40的栅极401、栅极绝缘层111、源漏金属层、TFT40的源极、TFT40的漏极402、绝缘层112以及通过位于绝缘层112表面的过孔，与TFT40的漏极402相连接的像素电极101。
需要说明的是，构图工艺，可包括光刻步骤，或，包括光刻步骤和刻蚀步骤，此外，所述构图工艺还可以包括打印、喷墨等其他用于形成预定图形的工艺。光刻工艺，是指通过包括成膜、曝光、显影等的工艺过程、利用光刻胶、掩模板、曝光机等形成图形的工艺。可根据本发明中所形成的结构选择适当的 构图工艺。
步骤S102：在阵列基板10的表面形成像素界定层20，所述像素界定层20包括彩色膜层；其中，彩色膜层包括多个具有不同颜色的彩色单元201，所述彩色单元201与阵列基板10上的亚像素100一一对应。
具体的，像素界定层20可以由间隔设置的彩色膜层和黑矩阵202构成的像素界定层20，所述彩色单元201与阵列基板10上的亚像素100的像素电极101一一对应，黑矩阵202与所述亚像素100中除了所述像素电极101以外的区域相对应。这样一来，黑矩阵202能够遮挡位于阵列基板10上的控制电路(例如TFT40所在的区域)，防止光线照射至上述控制电路，造成线路的损坏。
具体的，可以现在形成有像素电极101(或OLED显示结构30的第一电极301)的基板表面上形成如图1a所示的黑矩阵202，然后通过构图工艺，在黑矩阵202的表面形成不同颜色的彩色单元201，以构成彩色膜层。
对于RGB显示面板而言，彩色单元201的颜色可以为红色、绿色或蓝色。这样，阵列基板10上依次对应红色彩色单元201、绿色彩色单元201以及蓝色彩色单元201的三个亚像素可以构成一个像素单元。
对于RGBW显示装置而言，彩色单元201可以是红色彩色单元(R)、绿色彩色单元(G)、蓝色彩色单元(B)以及不填充任何颜色的、呈透明状的彩色单元201，该透明的彩色单元使得OLED发出的白色光线不经过滤色处理，从而构成白色彩色单元201。这样，阵列基板10上依次对应红色彩色单元201、绿色彩色单元201、蓝色彩色单元201以及白色彩色单元201的四个亚像素可以构成一个像素单元。
具体的，可以采用相同的掩膜版，通过四次掩膜曝光工艺分别形成条状的红色彩色单元201、绿色彩色单元201或蓝色彩色单元201，以及用于发出白光的透明彩色单元201。其中，在除第一次掩膜曝光工艺以外的其它掩膜曝光工艺中，需要对掩膜版进行移位，以避免不同颜色的彩色单元叠加。
步骤S103：在像素界定层20的表面形成与亚像素100一一对应的OLED 显示结构30。其中，OLED显示结构30发出的白光入射至阵列基板10。
具体的，如图2b所示，可以采用已经形成的像素电极101作为OLED显示结构30的第一电极301，然后，通过蒸镀法依次在第一电极301的表面形成空穴注入层303、空穴传输层304、有机发光层305、电子传输层306、电子注入层307。接下来，通过涂覆或者溅射工艺，在完成上述步骤之后形成的结构的表面上制作一整层的金属层，以构成OLED显示结构30的第二电极302。如上文所述，构成所述第二电极302的金属材料可以为金属铝或者金属银，从而可以制成全反射层，以实现镜面显示。
此外，为了使得OLED显示结构30能够发白光，如图3a所示，OLED显示结构30的有机发光层305可以包括位于所述空穴传输层304表面的、以任意顺序排列的红色有机发光层(R)、绿色有机发光层(G)以及蓝色有机发光层(B)。
所述红色有机发光层(R)、绿色有机发光层(G)以及蓝色有机发光层(B)可以采用蒸镀工艺制成。例如，可以先在空穴传输层304表面的蒸镀一层红色有机发光层；然后在红色有机发光层的表面蒸镀一层绿色有机发光层；接下来，在所述绿色有机发光层的表面蒸镀一层蓝色有机发光层。具有其它层叠顺序的有机发光层305可通过类似的方法制得，此处不再赘述。
可选择地，如图3b所示，OLED显示结构30的有机发光层305可以被构造成包括：以任意顺序并排设置成一层的红色有机发光层(R)、绿色有机发光层(G)以及蓝色有机发光层(B)。
具体的，可以采用相同的掩膜版，通过三次掩膜曝光工艺分别形成条状的红色有机发光层(R)、绿色有机发光层(G)或者蓝色有机发光层(B)。其中，在除第一次掩膜曝光工艺以外的另外两次掩膜曝光工艺中，需要对掩膜版进行移位，以避免不同的有机发光层叠加。
本发明实施例提供一种AMOLED显示面板的制作方法，包括形成具有多个亚像素的阵列基板。然后，在阵列基板的表面形成像素界定层，所述像素界 定层包括彩色膜层；其中，彩色膜层包括多个不同颜色的彩色单元，所述彩色单元与阵列基板上的亚像素一一对应。这样一来，依次对应红色、绿色以及蓝色彩色单元的三个亚像素可以构成一个像素单元，从而实现AMOLED显示面板的全彩显示。最后，在像素界定层的表面形成与亚像素一一对应的OLED显示结构。其中，OLED显示结构发出的白光入射至阵列基板，从而构成底发射式的AMOLED显示面板。由于像素界定层采用彩色膜层构成，因此无需在阵列基板靠近AMOLED显示面板出光侧的一侧表面上增设彩膜基板。从而可以减小AMOLED面板的厚度。
为了使得AMOLED显示面板被用作镜面显示时，其性能更加优越，本发明还提供另外一种AMOLED显示面板的制作方法。具体的，在所述亚像素100包括像素电极101的情况下，形成像素界定层20的方法可以包括：
在阵列基板10的表面形成如图4a所示的，仅由彩色膜层201构成的像素界定层20，其中，彩色单元201与所述亚像素100一一对应。这样一来，当O LED显示结构中的第二电极302采用具有较高反射率的金属银或金属铝制成时，在实现镜面显示的过程中，由于显示面板中没有黑矩阵202的阻挡，能够使得所有入射至第二电极302的光线被反射，从而可以实现镜面全反射。提高显示面板作为镜子使用时的镜面效果。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。

Claims (20)

  1. 一种AMOLED显示面板，包括：
    具有多个亚像素的阵列基板；
    位于所述阵列基板表面的像素界定层；和
    与所述亚像素一一对应的多个OLED显示结构，
    其特征在于，
    所述像素界定层包括彩色膜层；并且
    所述彩色膜层包括具有不同颜色的多个彩色单元，所述多个彩色单元与所述多个亚像素一一对应。
  2. 根据权利要求1所述的AMOLED显示面板，其特征在于，
    所述像素界定层仅由所述彩色膜层构成。
  3. 根据权利要求1或2所述的AMOLED显示面板，其特征在于，每个OLED显示结构包括：第一电极、与所述第一电极相对的第二电极，设置在所述第一电极和第二电极之间的有机材料功能层；
    其中，所述有机材料功能层包括从所述第一电极到所述第二电极依次设置的空穴注入层、空穴传输层、有机发光层、电子传输层以及电子注入层。
  4. 根据权利要求3所述的AMOLED显示面板，其特征在于，所述第二电极由具有高反射率的材料形成。
  5. 根据权利要求4所述的AMOLED显示面板，其特征在于，所述材料包括金属铝或金属银中的至少一种。
  6. 根据权利要求4所述的AMOLED显示面板，其特征在于，所述第一电 极通过设置在像素界定层中的过孔与所述亚像素中的薄膜晶体管的漏极相连接。
  7. 根据权利要求3所述的AMOLED显示面板，其特征在于，所述有机发光层包括以任意顺序依次层叠设置的红色有机发光层、绿色有机发光层以及蓝色有机发光层。
  8. 根据权利要求3所述的AMOLED显示面板，其特征在于，所述有机发光层包括以任意顺序并排设置成一层的红色有机发光层、绿色有机发光层以及蓝色有机发光层。
  9. 根据权利要求4所述的AMOLED显示面板，其特征在于，所述有机材料功能层的厚度与所述像素界定层的厚度相等。
  10. 根据权利要求1所述的AMOLED显示面板，其特征在于，所述彩色膜层的厚度范围为1～4μm。
  11. 根据权利要求10所述的AMOLED显示面板，其特征在于，所述彩色膜层的厚度范围为3～4μm。
  12. 一种显示装置，其特征在于，包括权利要求1-9中任一项所述的AMOLED显示面板。
  13. 一种AMOLED显示面板的制作方法，包括以下步骤：
    形成具有多个亚像素的阵列基板；
    在所述阵列基板的表面形成像素界定层，所述像素界定层包括彩色膜层；其中，所述彩色膜层包括具有不同颜色的多个彩色单元，所述多个彩色单元与 所述多个亚像素一一对应；
    形成与所述多个亚像素一一对应的多个OLED显示结构。
  14. 根据权利要求13所述的AMOLED显示面板的制作方法，其特征在于，在亚像素包括像素电极的情况下，形成像素界定层的步骤包括：
    在所述阵列基板的表面形成仅由所述彩色膜层构成的像素界定层。
  15. 根据权利要求13所述的AMOLED显示面板的制作方法，其特征在于，形成OLED显示结构的步骤包括：
    在像素界定层中形成过孔；和
    在所述过孔中形成OLED显示结构。
  16. 根据权利要求13所述的AMOLED显示面板的制作方法，其特征在于，形成OLED显示结构的步骤包括：
    形成第一电极；
    形成位于第一电极上的有机材料功能层；和
    形成位于有机材料功能层上的第二电极。
  17. 根据权利要求16所述的AMOLED显示面板的制作方法，其特征在于，形成有机材料功能层的步骤包括：
    通过蒸镀法依次形成空穴注入层、空穴传输层、有机发光层、电子传输层以及电子注入层。
  18. 根据权利要求17所述的AMOLED显示面板的制作方法，其特征在于，形成有机发光层的步骤包括：
    通过蒸镀法形成以任意次序彼此层叠设置的红色有机发光层、绿色有机发光层和蓝色有机发光层。
  19. 根据权利要求17所述的AMOLED显示面板的制作方法，其特征在于，形成有机发光层的步骤包括：
    通过掩膜曝光法形成以任意顺序并排设置成一层的红色有机发光层、绿色有机发光层和蓝色有机发光层。
  20. 根据权利要求16所述的AMOLED显示面板的制作方法，其特征在于，形成第二电极的步骤包括：
    用具有高反射率的材料形成所述第二电极。
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