WO2016072671A1 - Deposition film for triple layer capacitor and capacitor having improved heat dissipation - Google Patents

Deposition film for triple layer capacitor and capacitor having improved heat dissipation Download PDF

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Publication number
WO2016072671A1
WO2016072671A1 PCT/KR2015/011624 KR2015011624W WO2016072671A1 WO 2016072671 A1 WO2016072671 A1 WO 2016072671A1 KR 2015011624 W KR2015011624 W KR 2015011624W WO 2016072671 A1 WO2016072671 A1 WO 2016072671A1
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deposition
metal
operating region
film
capacitor
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PCT/KR2015/011624
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French (fr)
Korean (ko)
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박대진
전용원
한기주
박진아
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주식회사 뉴인텍
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/32—Wound capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/10—Metal-oxide dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors 

Definitions

  • the present invention relates to a deposition film for a three-stage capacitor and a heat dissipation improving capacitor.
  • Non-pattern deposition film deposition resistance is usually used.
  • Self Healing when there is a weak point in the film dielectric, short-circuit occurs between PN poles, the deposited metal is carbonized and insulation is recovered to maintain the function of the capacitor. It is called Self Healing.
  • the self-recovered part is very small, there is an advantage that the capacity hardly decreases.
  • the self-recovered part is not self-recovered at the weak point, there is a disadvantage that the breakdown voltage is generated due to the insulation force between the PN poles.
  • 1 is a view illustrating the concept of a self-healing phenomenon (Self Healing).
  • the white part on the right is carbonized and non-conductive, and when it is carbonized on the opposite side, self-healing (ambient and insulated) occurs in that area, making it inactive.
  • Capacitors in non-pattern deposited films have the following security devices in order to solve the problem of a secondary breakdown caused by a breakdown of voltage when the self-recovery is not performed. If the self-recovery phenomenon of the film capacitor is not self-recovering, the insulation force drops and shorts between the PN poles, the film melts, and the gas pressure is generated inside to open the pressure fuse (security device) to prevent secondary disasters. It was. This method has good performance but has the disadvantage of requiring space for the pressure fuse and increasing size and cost.
  • a related patent is the applicant's published patent 10-2011-0087853.
  • a low deposition resistance requires more energy when a self-recovery phenomenon occurs at the wet point, and a large energy damages the capacitor during self-recovery, resulting in a breakdown voltage failure when a repetitive phenomenon occurs.
  • Low has the advantage that the deposited metal is not oxidized.
  • the deposition resistance is high, the self-recoverability is excellent and the capacitor durability life is long due to the weak damage to the capacitor during the self recovery at the wet point.However, when handling the deposited film with high deposition resistance, it is exposed to external moisture or stored for a long time. There is a problem in that the oxidation of the capacitor is lowered due to oxidation.
  • the present invention is to provide a deposition film for a three-stage capacitor by implementing a multi-stage, taking advantage of the excellent self-recovery when the resistance is high (thin thickness) and the reduction of heat generation and reduction of oxidation when the resistance is low. .
  • the present invention provides excellent self-recoverability without using a pattern film, and at the same time reduces the temperature rise of the capacitor, and reduces the durability of the capacitor due to oxidation when the deposition resistance is handled inversely with the increase in self-recoverability. It is to provide a deposition film for a three-stage capacitor that can be.
  • the present invention the disadvantage that the conventional pattern film capacitor takes 4 ⁇ 10% more material cost and size and increases, and the conventional non-pattern film capacitor does not have a self-healing in order to prevent poor pressure and to prevent secondary disasters
  • the built-in security device has been developed with the focus on solving both the problem of material cost increase and size increase.
  • Metallic contact portions 10 that conduct current with the metal silicon of the capacitor are formed on the widthwise one end 1a of the dielectric 1 by metal deposition, and no metal is deposited on the widthwise other end 1b of the dielectric 1.
  • a margin part 20 is formed, and a metal is deposited between the metal silicon contact part 10 and the margin part 20 to form an operation region A.
  • the operating region A may include a first operating region 30 located at one side in the width direction of the dielectric 1 and adjacent to the metallic contact portion 10.
  • a second operating region 40 positioned on the other side in the width direction of the dielectric 1 and adjacent to the margin portion 20,
  • the deposition thickness t2 of the second operating region 40 is configured to be thinner than the deposition thickness t1 of the first operating region 30.
  • the deposition thickness t0 of the metal silicon contact 10 is thicker than the deposition thickness t1 of the first operating region 30.
  • the deposition thickness t1 of the first operating region 30 is greater than the deposition thickness t2 of the second operating region 40.
  • the first operating region 30 of the upper deposition film 100 and the first operating region 30 of the lower deposition film 200 positioned below to face the width of the upper deposition film 100 are formed so as not to overlap each other.
  • the overlapping region B is formed so that the second operating region 40 of the lower deposition film 200 is positioned below the end 30a of the first operating region 30 of the upper deposition film 100.
  • a deposition film for a capacitor is provided.
  • the temperature of the capacitor is improved by the relatively thick and resistive first operating region 30 while excellent in self-recoverability by the second operating region 40 having a thin structure without using a pattern film.
  • a deposition film for a three-stage capacitor that can reduce the rise and reduce the durability of the capacitor due to oxidation of the deposition portion when handling the deposition film inversely proportional to the increase in self-recovery.
  • the built-in security device is provided in order to provide a three-stage capacitor deposition film that solves both the cost increase and the size increase.
  • the technology is applied to film capacitors for inverters such as hybrid vehicles, electric vehicles, hydrogen fuel cell vehicles, plug-in electric vehicles, etc., but the technology can be applied to general industrial applications.
  • the metal deposition resistance when the metal deposition resistance is increased in order to increase self-healing, the resistance value increases as the metal deposition resistance is oxidized when exposed to external moisture or stored for a long time. It adheres well to the conventional moisture and improves the phenomenon of oxidation during long time storage.
  • the prior art had a problem when the metal deposition resistance was exposed to external moisture and the metal deposition resistance was oxidized during long-term storage as the metal deposition resistance increased.
  • the oil is coated on the deposited metal coated portion after vacuum deposition, a small amount of the deposited metal coated portion is deposited after vacuum deposition. Coating the oil improves the phenomenon that the metal deposited on the plastic film is oxidized after moisture and long time storage. In particular, when the Zn deposition is used, the effect of significantly reducing the metal deposition resistance oxidation was remarkable. In addition, since the oil can be uniformly coated on the deposited metal and the metal film is deposited on the deposited metal film, the problem of oxidizing the deposited metal is minimized by minimizing moisture and reaction.
  • 1 is an explanatory diagram of a self-healing phenomenon.
  • Figure 2 is a schematic view of the deposition film according to the prior art.
  • FIG 3 is a cross-sectional view of a deposition film for a three-stage capacitor according to an embodiment of the present invention.
  • Figure 4 is a perspective view of the deposition film winding for a three-stage capacitor according to an embodiment of the present invention.
  • FIG. 5 is a cross-sectional view of a conventional pattern film.
  • Metallic contact portions 10 that conduct current with the metal silicon of the capacitor are formed on the widthwise one end 1a of the dielectric 1 by metal deposition, and no metal is deposited on the widthwise other end 1b of the dielectric 1.
  • a margin part 20 is formed, and a metal is deposited between the metal silicon contact part 10 and the margin part 20 to form an operation region A.
  • the operating region A may include a first operating region 30 located at one side in the width direction of the dielectric 1 and adjacent to the metallic contact portion 10.
  • a second operating region 40 positioned on the other side in the width direction of the dielectric 1 and adjacent to the margin portion 20,
  • the deposition thickness t2 of the second operating region 40 is configured to be thinner than the deposition thickness t1 of the first operating region 30.
  • the deposition thickness t0 of the metal silicon contact 10 is thicker than the deposition thickness t1 of the first operating region 30.
  • the deposition thickness t1 of the first operating region 30 is greater than the deposition thickness t2 of the second operating region 40.
  • the first operating region 30 of the upper deposition film 100 and the first operating region 30 of the lower deposition film 200 positioned below to face the width of the upper deposition film 100 are formed so as not to overlap each other.
  • the overlapping region B is formed so that the second operating region 40 of the lower deposition film 200 is positioned below the end 30a of the first operating region 30 of the upper deposition film 100.
  • FIG. 1 is a schematic diagram illustrating a self-healing phenomenon
  • FIG. 2 is a schematic diagram of a deposition film according to the prior art
  • FIG. 3 is a cross-sectional view of a deposition film for a three-stage capacitor according to an embodiment of the present invention, a plan view
  • FIG. 3 is a perspective view of a deposition film winding for a three-stage capacitor according to a second embodiment of the present invention
  • FIG. 5 is a cross-sectional view of a conventional pattern film
  • the metallic contact is commonly used as a heavy edge area or a dropping part.
  • the three-stage capacitor deposition film of the present invention in the deposition film for capacitors in which metal is deposited and overlapped in a pair of two pieces, the widthwise one end of the dielectric 1 Metallization contact portion 10, which conducts electricity to the metallic silicon of the capacitor, is formed at 1a by metal deposition, and a margin portion 20 in which no metal is deposited is formed at the other end 1b in the width direction of the dielectric 1, A metal is deposited between the metallic contact portion 10 and the margin portion 20 to form an operating region A.
  • the operating region A is located on one side in the width direction of the dielectric 1 and the metallic contact portion 10 is formed.
  • a second operating region 40 adjacent to the margin part 20 and positioned on the other side in the width direction of the dielectric 1.
  • the deposition thickness t2 of the second operating region 40 is thinner than the deposition thickness t1 of the first operating region 30.
  • E) is thicker than the deposition thickness t1 of the first operating region 30, and the deposition thickness t1 of the first operating region 30 is the second operating region 40. It is thicker than the deposition thickness t2 of the operating region 40.
  • the lower deposition film 200 positioned below the first operating region 30 of the upper deposition film 100 and the upper deposition film 100 in the width direction thereof.
  • the first operating region 30 is formed so as not to overlap with each other overlapping region (B) is formed so that the lower deposition film 200 at the lower end of the end 30a of the first operating region 30 of the upper deposition film 100 Is located in the second operating area 40.
  • the deposition thickness t0 of the metal silicon contact 10 is the deposition thickness t1 of the first operating region 30. Greater than, the deposition thickness t1 of the first operating region 30 is greater than the deposition thickness t2 of the second operating region 40, and the deposition resistance of the metallic contact portion 10 is greater. Is 3 ⁇ 2 ⁇ / cm 2 , and the deposition resistance of the first operating region 30 is 15 ⁇ 10 ⁇ / cm 2 , and the deposition resistance of the second operating region 40 is 60 ⁇ 50 (or 40 ⁇ 30). ) Is preferably ⁇ / cm 2 . It is possible to provide a metal-deposited dielectric film having excellent heat generation reduction and self-healing characteristics and being capable of mass production while exhibiting capacitor performance as in the prior art in the resistance area per unit area.
  • the first operation region 30 and the upper deposition film 100 and the width direction of the upper deposition film 100 The first operating region 30 of the lower deposition film 200 positioned below to face each other is formed so as not to overlap each other, so that the overlapping region B is formed to form the first operating region 30 of the upper deposition film 100.
  • the second operating region 40 of the lower deposition film 200 is positioned below the end 30a, and the width W3 of the metal silicon contact 10 is 3 to 8 mm, and the width W3 of the metal contact 10 is shown.
  • the width W1 " of the first operating region 30 " is preferably 0.2 to 0.49 times (or more than 0.2 to less than 0.5 times) the total width W of the dielectric 1. When the width W1 of the first operating region 30 is too large, the self-healing property is inferior, and when the width W2 of the second operating region 40 is too large, heat generation and oxidation are increased. The range was found to be appropriate for the test results.
  • the heavy edge area becomes larger than necessary.
  • the ratio is 0.2 to 0.5 times
  • the width W3 of the metal silicon contact portion 10 is 3 to 8 mm, and the overall width of the dielectric material is 50 mm
  • the width 2 to 30 mm of the overlapped region B can be secured.
  • the width W3 of the metal contact portion 10 + the width W1 of the first operating region 30 is 0.3 to 0.5 times the total width W of the dielectric 1 and the dielectric width is about 50 mm Overlap areas of 2 to 30 mm are secured.
  • the size of the overlapped region is less than 2mm, if there is no clear edge separation during the vacuum deposition of metal, overlapping portions may occur during production, which may result in regions (regions with low self-recovery characteristics) that do not achieve the object of the present invention. If the overlap region is too wide, there is a problem that the second operating region 40 is too large.
  • oil may be applied to the deposited metal coated portion after metal vacuum deposition.
  • the oil is one selected from silicon-based or fluorine-based oils, and is uniformly coated on the deposition coating part when the temperature of the oil is heated to 90 to 170 ° C. inside the vapor deposition machine during deposition, thereby increasing the anti-oxidation effect.
  • the oil is further coated on a portion coated with the deposited metal after metal vacuum deposition.
  • the oil is one selected from silicon-based or fluorine-based oils, and the oil evaporated by heating the oil temperature to 90-170 ° C. in the vacuum evaporator is preferably coated on the metal evaporation part, the metal evaporation part and the margin part.
  • the capacitor temperature rise equation can be calculated as follows.
  • Capacitor capacity is determined by the following formula.
  • Busbars are low-inductance and cooling-efficient capacitors placed on the underside of the capacitor cell and insulated between PN pole busbars side by side. In the case of water-cooled or air-cooled, coolant or cold air can be made to flow on the bottom of the capacitor (inverter housing heatsink).
  • the opposite side of the capacitor may be attached to a structure heat sink that absorbs heat from the inside of the device and dissipates to the outside. In this test, direct cooling water flowed best.
  • the dielectric deposition films were different from each other, and the other parts were made as shown in FIG. Temperature measurement points were the cell bottom, P-pole busbar, N-pole busbar, and Cell Top, and the temperatures shown were based on hot spots.
  • the life expectancy is about 9,000 hours and the capacitor temperature rise 78.3 when cooling water is cooled on the bottom of the capacitor. If the capacitor is used at 650V, the life expectancy is about 32,000 hours, which can extend the life of about 23,000 hours.
  • a deposition film for a capacitor is provided.
  • the temperature of the capacitor is improved by the relatively thick and resistive first operating region 30 while excellent in self-recoverability by the second operating region 40 having a thin structure without using a pattern film.
  • a deposition film for a three-stage capacitor that can reduce the rise and reduce the durability of the capacitor due to oxidation of the deposition portion when handling the deposition film inversely proportional to the increase in self-recovery.
  • the built-in security device is provided in order to provide a three-stage capacitor deposition film that solves both the cost increase and the size increase.
  • the technology is applied to film capacitors for inverters such as hybrid vehicles, electric vehicles, hydrogen fuel cell vehicles, plug-in electric vehicles, etc., but the technology can be applied to general industrial applications.
  • the metal deposition resistance when the metal deposition resistance is increased in order to increase self-healing, the resistance value increases as the metal deposition resistance is oxidized when exposed to external moisture or stored for a long time. It adheres well to the conventional moisture and improves the phenomenon of oxidation during long time storage.
  • the prior art had a problem when the metal deposition resistance was exposed to external moisture and the metal deposition resistance was oxidized during long-term storage as the metal deposition resistance increased.
  • the oil is coated on the deposited metal coated portion after vacuum deposition, a small amount of the deposited metal coated portion is deposited after vacuum deposition. Coating the oil improves the phenomenon that the metal deposited on the plastic film is oxidized after moisture and long time storage. In particular, when the Zn deposition is used, the effect of significantly reducing the metal deposition resistance oxidation was remarkable. In addition, since the oil can be uniformly coated on the deposited metal and the metal film is deposited on the deposited metal film, the problem of oxidizing the deposited metal is minimized by minimizing moisture and reaction.

Abstract

A deposition film for a triple-layer capacitor having metal deposited thereon and having two layers laminated as one group facing each other is characterized in that: a metallized contact portion (10) electrically communicating with a metallized contact of the capacitor is formed on one side end (1a) in a width direction of a dielectric (1) through metal deposition; a margin portion (20) on which metal is not deposited is formed on the other side end (1b) in the width direction of the dielectric (1); and metal is deposited between the metallized contact portion (10) and the margin portion (20) so as to form an operating region (A). The operating region (A) comprises: a first operating region (30) disposed on one side in the width direction of the dielectric (1) and adjacent to the metallized contact portion (10); and a second operating region (40) disposed on the other side in the width direction of the dielectric (1) and adjacent to the margin portion (20). The deposition thickness (t2) of the second operating region (40) is thinner than the deposition thickness (t1) of the first operating region (30), the deposition thickness (t0) of the metallized contact portion (10) is thicker than the deposition thickness (t1) of the first operating region (30), and the deposition thickness (t1) of the first operating region (30) is thicker than the deposition thickness (t2) of the second operating region (40).

Description

3단식 커패시터용 증착 필름 및 방열성 개선 커패시터Deposition Films for Three-Stage Capacitors and Thermally Enhanced Capacitors
본 발명은 3단식 커패시터용 증착 필름 및 방열성 개선 커패시터에 관한 것이다.The present invention relates to a deposition film for a three-stage capacitor and a heat dissipation improving capacitor.
Non Pattern 증착필름의 경우 통상 증착저항을 증착하여 사용했으나 필름 유전체에 Weak Point가 있을 때 순간적으로 PN극간 쇼트가 발생하면서 증착된 금속이 탄화되면서 없어지고 절연이 회복되어 커패시터 기능을 계속 유지하는 기능을 Self Healing(자기회복)이라고 한다. 자기회복된 부분이 매우 작아서 용량이 거의 감소하지 않는 장점이 있으나 Weak Point에서 자기회복되지 않으면 PN극간에 절연력이 떨어져 내압불량이 발생하는 단점이 있었다. 도 1은 자기회복 현상(Self Healing)의 개념을 설명하여 주는 도면이다. 오른쪽의 흰색 부분이 탄화되어 비전도성을 띠는 부분이며 대향되는 부분에서 탄화되면 그 영역에 자기 회복(주변과 절연)이 이루어져 비활동 영역이 된다. In case of non-pattern deposition film, deposition resistance is usually used. However, when there is a weak point in the film dielectric, short-circuit occurs between PN poles, the deposited metal is carbonized and insulation is recovered to maintain the function of the capacitor. It is called Self Healing. Although the self-recovered part is very small, there is an advantage that the capacity hardly decreases. However, if the self-recovered part is not self-recovered at the weak point, there is a disadvantage that the breakdown voltage is generated due to the insulation force between the PN poles. 1 is a view illustrating the concept of a self-healing phenomenon (Self Healing). The white part on the right is carbonized and non-conductive, and when it is carbonized on the opposite side, self-healing (ambient and insulated) occurs in that area, making it inactive.
Non Pattern 증착필름의 커패시터는 자기회복이 되지 않으면 내압 불량이 발생하여 2차적인 재해가 발생하는 문제점을 해결하기 위해서 아래와 같은 보안장치를 내장하였다. 필름 커패시터는 자기회복 현상이 발생시 자기회복되지 않으면 절연력이 떨어지면서 PN극간에 쇼트되면서 필름이 용융되면서 내부에 가스 압력이 발생하여 압력퓨즈(보안장치)가 오픈되도록 설치하여 2차적인 재해를 방지하였다. 이 방법은 성능은 우수하지만 압력 퓨즈를 내장하는데 공간이 필요하고 사이즈가 커지고 단가가 상승하는 단점이 있다. 관련 특허로서 본 출원인의 공개특허 10-2011-0087853가 있다.Capacitors in non-pattern deposited films have the following security devices in order to solve the problem of a secondary breakdown caused by a breakdown of voltage when the self-recovery is not performed. If the self-recovery phenomenon of the film capacitor is not self-recovering, the insulation force drops and shorts between the PN poles, the film melts, and the gas pressure is generated inside to open the pressure fuse (security device) to prevent secondary disasters. It was. This method has good performance but has the disadvantage of requiring space for the pressure fuse and increasing size and cost. A related patent is the applicant's published patent 10-2011-0087853.
증착 필름의 경우 증착 저항이 낮으면 Weak Point에서 자기회복 현상이 발생시 더 많은 에너지가 필요하고 큰 에너지는 자기회복시 커패시터에 데미지가 커서 반복 현상이 발생시 내압 불량이 발생하는 단점이 있으나, 증착저항이 낮으면 증착 금속이 산화되지 않는 장점이 있다. 반면에 증착저항이 높으면 자기회복성이 우수하고 Weak Point에서 자기회복시 커패시터에 데미지가 약해서 커패시터 내구성 수명이 길어진 장점이 있으나, 증착저항이 높은 증착 필름 취급시 외부 습기에 노출되거나 장시간 보관시 증착저항이 산화되어 커패시터 내구성이 저하되는 문제점이 있다. 본 발명은 다단식으로 구현하여 저항이 높을 때(두께가 얇을때)의 장점인 자기 회복 우수성과 저항이 낮을 때의 발열량 감소 및 산화현상 감소의 장점을 취한 3단식 커패시터용 증착 필름을 제공하기 위한 것이다. In the case of a deposition film, a low deposition resistance requires more energy when a self-recovery phenomenon occurs at the wet point, and a large energy damages the capacitor during self-recovery, resulting in a breakdown voltage failure when a repetitive phenomenon occurs. Low has the advantage that the deposited metal is not oxidized. On the other hand, if the deposition resistance is high, the self-recoverability is excellent and the capacitor durability life is long due to the weak damage to the capacitor during the self recovery at the wet point.However, when handling the deposited film with high deposition resistance, it is exposed to external moisture or stored for a long time. There is a problem in that the oxidation of the capacitor is lowered due to oxidation. The present invention is to provide a deposition film for a three-stage capacitor by implementing a multi-stage, taking advantage of the excellent self-recovery when the resistance is high (thin thickness) and the reduction of heat generation and reduction of oxidation when the resistance is low. .
본 발명은 패턴 필름을 사용하지 않고 자기회복성이 우수하게 하면서, 동시에 커패시터의 온도 상승을 줄일 수 있으며, 자기회복성 증가와 반비례하는 증착 필름 취급시 증착저항이 산화에 의한 커패시터 내구성이 저하를 줄일수 있는 3단식 커패시터용 증착 필름을 제공하기 위한 것이다. The present invention provides excellent self-recoverability without using a pattern film, and at the same time reduces the temperature rise of the capacitor, and reduces the durability of the capacitor due to oxidation when the deposition resistance is handled inversely with the increase in self-recoverability. It is to provide a deposition film for a three-stage capacitor that can be.
본 발명은, 종래의 Pattern Film Capacitor가 자재비 및 사이즈가 4 ~ 10% 더 소요되고 커지는 단점과, 종래의 Non Pattern Film Capacitor는 Self Healing이 되지 않으면 내압 불량이 발생하고 2차적인 재해를 방지하기 위해서 보안장치를 내장하므로 자재비 상승 및 사이즈가 커지는 문제점을 모두 해결하는데 주안점을 두고 개발하게 되었다.The present invention, the disadvantage that the conventional pattern film capacitor takes 4 ~ 10% more material cost and size and increases, and the conventional non-pattern film capacitor does not have a self-healing in order to prevent poor pressure and to prevent secondary disasters The built-in security device has been developed with the focus on solving both the problem of material cost increase and size increase.
금속이 증착되고 2매 1조로 대향되게 겹쳐서 이루어지는 커패시터용 증착 필름에 있어서,In the vapor deposition film for capacitors in which a metal is deposited and overlapped in a pair of two sheets,
유전체(1)의 폭방향 일측단(1a)에 커패시터의 메탈리콘과 통전하는 메탈리콘 접촉부(10)가 금속 증착으로 형성되고, 상기 유전체(1)의 폭방향 타측단(1b)에 금속이 증착되지 않은 마진부(20)가 형성되고, 상기 메탈리콘 접촉부(10)와 마진부(20) 사이에 금속이 증착되어 작동영역(A)이 형성되되, Metallic contact portions 10 that conduct current with the metal silicon of the capacitor are formed on the widthwise one end 1a of the dielectric 1 by metal deposition, and no metal is deposited on the widthwise other end 1b of the dielectric 1. A margin part 20 is formed, and a metal is deposited between the metal silicon contact part 10 and the margin part 20 to form an operation region A.
상기 작동 영역(A)은, 유전체(1)의 폭방향 일측에 위치하고 상기 메탈리콘 접촉부(10)에 인접하는 제1 작동영역(30)과,The operating region A may include a first operating region 30 located at one side in the width direction of the dielectric 1 and adjacent to the metallic contact portion 10.
유전체(1)의 폭방향 타측에 위치하고 상기 마진부(20)에 인접하는 제2 작동영역(40)으로 구성되고,A second operating region 40 positioned on the other side in the width direction of the dielectric 1 and adjacent to the margin portion 20,
상기 제2 작동영역(40)의 증착 두께(t2)는 상기 제1 작동영역(30)의 증착 두께(t1)보다 얇게 구성되되,The deposition thickness t2 of the second operating region 40 is configured to be thinner than the deposition thickness t1 of the first operating region 30.
상기 메탈리콘 접촉부(10)의 증착 두께(t0)는 상기 제1 작동영역(30)의 증착 두께(t1)보다 두껍고,The deposition thickness t0 of the metal silicon contact 10 is thicker than the deposition thickness t1 of the first operating region 30.
상기 제1 작동영역(30)의 증착 두께(t1)는 제2 작동영역(40)는 상기 제2 작동영역(40)의 증착 두께(t2)보다 두껍고,The deposition thickness t1 of the first operating region 30 is greater than the deposition thickness t2 of the second operating region 40.
상부 증착필름(100)의 제1 작동영역(30)과 상기 상부 증착필름(100)과 폭방향으로 대향되게 하부에 위치한 하부 증착필름(200)의 제1 작동영역(30)이 서로 겹치지 않도록 형성되어 미겹침 영역(B)가 형성되어 상기 상부 증착필름(100)의 제1 작동영역(30) 끝단(30a)의 하부에 하부 증착필름(200)의 제2 작동영역(40)이 위치하는 것을 특징으로 하는 3단식 커패시터용 증착 필름.The first operating region 30 of the upper deposition film 100 and the first operating region 30 of the lower deposition film 200 positioned below to face the width of the upper deposition film 100 are formed so as not to overlap each other. The overlapping region B is formed so that the second operating region 40 of the lower deposition film 200 is positioned below the end 30a of the first operating region 30 of the upper deposition film 100. Deposition film for a three-stage capacitor.
본 발명에 따르는 경우, 증착 필름을 다단식으로 구현하여 저항이 높을 때(두께가 얇을때)의 장점인 자기 회복 우수성과, 저항이 낮을 때의 발열량 감소 및 산화현상 감소의 장점을 선택적으로 취한 3단식 커패시터용 증착 필름이 제공된다. According to the present invention, by implementing the deposition film in multiple stages, a three-stage type that selectively takes advantage of excellent self-healing when the resistance is high (when the thickness is thin) and reduction of calorific value and oxidation phenomenon when the resistance is low. A deposition film for a capacitor is provided.
본 발명에 따르는 경우, 패턴 필름을 사용하지 않고 얇은 구조의 제2 작동영역(40)에 의해 자기회복성을 우수하게 하면서, 동시에 상대적으로 두껍고 저항인 제1 작동영역(30)에 의해 커패시터의 온도 상승을 줄일 수 있으며, 자기회복성 증가와 반비례하는 증착 필름 취급시 증착부의 산화에 의한 커패시터 내구성이 저하를 줄일 수 있는 3단식 커패시터용 증착 필름이 제공된다. According to the present invention, the temperature of the capacitor is improved by the relatively thick and resistive first operating region 30 while excellent in self-recoverability by the second operating region 40 having a thin structure without using a pattern film. There is provided a deposition film for a three-stage capacitor that can reduce the rise and reduce the durability of the capacitor due to oxidation of the deposition portion when handling the deposition film inversely proportional to the increase in self-recovery.
본 발명에 따르는 경우, 종래의 Pattern Film Capacitor가 자재비 및 사이즈가 4 ~ 10% 더 소요되고 커지는 단점과, 종래의 Non Pattern Film Capacitor는 Self Healing이 되지 않으면 내압 불량이 발생하고 2차적인 재해를 방지하기 위해서 보안장치를 내장하므로 자재비 상승 및 사이즈가 커지는 문제점을 모두 해결한 3단식 커패시터용 증착 필름이 제공된다. In the case of the present invention, the disadvantage that the conventional pattern film capacitor takes 4 to 10% more in material cost and size and becomes larger, and the conventional non-pattern film capacitor does not have self-healing, which causes poor pressure resistance and prevents secondary disasters. The built-in security device is provided in order to provide a three-stage capacitor deposition film that solves both the cost increase and the size increase.
본 기술은 하이브리드 자동차, 전기자동차, 수소연료전지 자동차 플러그인 전기자동차 등 인버터용 필름 커패시터에 적용되지만 일반 산업용으로 기술을 응용하여 사용할 수 있다. 종래 기술은 자기 회복성 증가를 위하여 금속증착 저항이 높이는 경우, 외부 습기에 노출되거나 장기간 보관시 금속 증착저항이 산화되면서 저항 값이 상승하는 문제점이 있었는데 본 기술의 경우 금속증착시 증착금속이 플라스틱 필름에 잘 접착되어 종래의 습기 및 장시간 보관시 산화되는 현상을 개선하였다. 종래 기술은 금속증착 저항이 높아지면서 외부 습기에 노출되거나 장기간 보관시 금속 증착저항이 산화되면 문제점이 있었는데 진공 증착 후 증착금속 코팅된 부분에 오일을 코팅하면 진공 증착 후 증착금속 코팅된 부분에 미량의 오일을 코팅하면 플라스틱 필름에 금속증착된 금속이 습기 및 장시간 보관시 산화되는 현상을 개선하였다. 특히, Zn 증착시 사용하면 금속증착 저항 산화를 현격히 감소시키는 효과가 두드러졌다. 또한, 증착 금속 증착된 부분에 오일을 균일하게 코팅이 가능해지고증착된 금속막에 오일에 코팅되어 있어서 습기와 반응이 최소화하여 증착금속을 산화시키는 문제점을 개선하였다.The technology is applied to film capacitors for inverters such as hybrid vehicles, electric vehicles, hydrogen fuel cell vehicles, plug-in electric vehicles, etc., but the technology can be applied to general industrial applications. In the prior art, when the metal deposition resistance is increased in order to increase self-healing, the resistance value increases as the metal deposition resistance is oxidized when exposed to external moisture or stored for a long time. It adheres well to the conventional moisture and improves the phenomenon of oxidation during long time storage. The prior art had a problem when the metal deposition resistance was exposed to external moisture and the metal deposition resistance was oxidized during long-term storage as the metal deposition resistance increased. However, if the oil is coated on the deposited metal coated portion after vacuum deposition, a small amount of the deposited metal coated portion is deposited after vacuum deposition. Coating the oil improves the phenomenon that the metal deposited on the plastic film is oxidized after moisture and long time storage. In particular, when the Zn deposition is used, the effect of significantly reducing the metal deposition resistance oxidation was remarkable. In addition, since the oil can be uniformly coated on the deposited metal and the metal film is deposited on the deposited metal film, the problem of oxidizing the deposited metal is minimized by minimizing moisture and reaction.
도 1은 자기회복 현상(Self Healing) 개념 설명도.1 is an explanatory diagram of a self-healing phenomenon.
도 2는 종래 기술에 의한 증착필름 구성도.Figure 2 is a schematic view of the deposition film according to the prior art.
도 3은 본 발명의 실시예에 따른 3단식 커패시터용 증착 필름 단면도, 평면도.3 is a cross-sectional view of a deposition film for a three-stage capacitor according to an embodiment of the present invention.
도 4는 본 발명의 실시예에 따른 3단식 커패시터용 증착 필름 권취 사시도.Figure 4 is a perspective view of the deposition film winding for a three-stage capacitor according to an embodiment of the present invention.
도 5는 종래의 패턴 필름 단면도.5 is a cross-sectional view of a conventional pattern film.
도 7은 커패시터 수명표.7 is a capacitor lifetime table.
금속이 증착되고 2매 1조로 대향되게 겹쳐서 이루어지는 커패시터용 증착 필름에 있어서,In the vapor deposition film for capacitors in which a metal is deposited and overlapped in a pair of two sheets,
유전체(1)의 폭방향 일측단(1a)에 커패시터의 메탈리콘과 통전하는 메탈리콘 접촉부(10)가 금속 증착으로 형성되고, 상기 유전체(1)의 폭방향 타측단(1b)에 금속이 증착되지 않은 마진부(20)가 형성되고, 상기 메탈리콘 접촉부(10)와 마진부(20) 사이에 금속이 증착되어 작동영역(A)이 형성되되, Metallic contact portions 10 that conduct current with the metal silicon of the capacitor are formed on the widthwise one end 1a of the dielectric 1 by metal deposition, and no metal is deposited on the widthwise other end 1b of the dielectric 1. A margin part 20 is formed, and a metal is deposited between the metal silicon contact part 10 and the margin part 20 to form an operation region A.
상기 작동 영역(A)은, 유전체(1)의 폭방향 일측에 위치하고 상기 메탈리콘 접촉부(10)에 인접하는 제1 작동영역(30)과,The operating region A may include a first operating region 30 located at one side in the width direction of the dielectric 1 and adjacent to the metallic contact portion 10.
유전체(1)의 폭방향 타측에 위치하고 상기 마진부(20)에 인접하는 제2 작동영역(40)으로 구성되고,A second operating region 40 positioned on the other side in the width direction of the dielectric 1 and adjacent to the margin portion 20,
상기 제2 작동영역(40)의 증착 두께(t2)는 상기 제1 작동영역(30)의 증착 두께(t1)보다 얇게 구성되되,The deposition thickness t2 of the second operating region 40 is configured to be thinner than the deposition thickness t1 of the first operating region 30.
상기 메탈리콘 접촉부(10)의 증착 두께(t0)는 상기 제1 작동영역(30)의 증착 두께(t1)보다 두껍고,The deposition thickness t0 of the metal silicon contact 10 is thicker than the deposition thickness t1 of the first operating region 30.
상기 제1 작동영역(30)의 증착 두께(t1)는 제2 작동영역(40)는 상기 제2 작동영역(40)의 증착 두께(t2)보다 두껍고,The deposition thickness t1 of the first operating region 30 is greater than the deposition thickness t2 of the second operating region 40.
상부 증착필름(100)의 제1 작동영역(30)과 상기 상부 증착필름(100)과 폭방향으로 대향되게 하부에 위치한 하부 증착필름(200)의 제1 작동영역(30)이 서로 겹치지 않도록 형성되어 미겹침 영역(B)가 형성되어 상기 상부 증착필름(100)의 제1 작동영역(30) 끝단(30a)의 하부에 하부 증착필름(200)의 제2 작동영역(40)이 위치하는 것을 특징으로 하는 3단식 커패시터용 증착 필름.The first operating region 30 of the upper deposition film 100 and the first operating region 30 of the lower deposition film 200 positioned below to face the width of the upper deposition film 100 are formed so as not to overlap each other. The overlapping region B is formed so that the second operating region 40 of the lower deposition film 200 is positioned below the end 30a of the first operating region 30 of the upper deposition film 100. Deposition film for a three-stage capacitor.
이하에서 본 발명의 일실시예 따른 다단식 커패시터용 증착 필름 및 커패시터에 대하여 첨부된 도면을 참조하여 상세하게 설명한다. 도 1은 자기회복 현상(Self Healing) 개념 설명도, 도 2는 종래 기술에 의한 증착필름 구성도, 도 3은 본 발명의 실시예에 따른 3단식 커패시터용 증착 필름 단면도, 평면도, 도 4는 본 발명의 제 2실시예에 따른 3단식 커패시터용 증착 필름 권취 사시도, 도 5는 종래의 패턴 필름 단면도, 도 7은 커패시터 수명표이다. 본 발명에서 메탈리콘 접촉부는 관용어로 Heavy Edge Area 또는 강하부분으로 통용된다.Hereinafter, a deposition film and a capacitor for a multi-stage capacitor according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. 1 is a schematic diagram illustrating a self-healing phenomenon, FIG. 2 is a schematic diagram of a deposition film according to the prior art, FIG. 3 is a cross-sectional view of a deposition film for a three-stage capacitor according to an embodiment of the present invention, a plan view, and FIG. 3 is a perspective view of a deposition film winding for a three-stage capacitor according to a second embodiment of the present invention, FIG. 5 is a cross-sectional view of a conventional pattern film, and FIG. In the present invention, the metallic contact is commonly used as a heavy edge area or a dropping part.
도 3, 도 4에 도시된 바와 같이, 본 발명의 3단식 커패시터용 증착 필름은, 금속이 증착되고 2매 1조로 대향되게 겹쳐서 이루어지는 커패시터용 증착 필름에 있어서, 유전체(1)의 폭방향 일측단(1a)에 커패시터의 메탈리콘과 통전하는 메탈리콘 접촉부(10)가 금속 증착으로 형성되고, 상기 유전체(1)의 폭방향 타측단(1b)에 금속이 증착되지 않은 마진부(20)가 형성되고, 상기 메탈리콘 접촉부(10)와 마진부(20) 사이에 금속이 증착되어 작동영역(A)이 형성되되, 상기 작동 영역(A)은, 유전체(1)의 폭방향 일측에 위치하고 상기 메탈리콘 접촉부(10)에 인접하는 제1 작동영역(30)과, 유전체(1)의 폭방향 타측에 위치하고 상기 마진부(20)에 인접하는 제2 작동영역(40)으로 구성된다. As shown in Fig. 3 and Fig. 4, the three-stage capacitor deposition film of the present invention, in the deposition film for capacitors in which metal is deposited and overlapped in a pair of two pieces, the widthwise one end of the dielectric 1 Metallization contact portion 10, which conducts electricity to the metallic silicon of the capacitor, is formed at 1a by metal deposition, and a margin portion 20 in which no metal is deposited is formed at the other end 1b in the width direction of the dielectric 1, A metal is deposited between the metallic contact portion 10 and the margin portion 20 to form an operating region A. The operating region A is located on one side in the width direction of the dielectric 1 and the metallic contact portion 10 is formed. ) And a second operating region 40 adjacent to the margin part 20 and positioned on the other side in the width direction of the dielectric 1.
또한, 도 3, 도 4에 도시된 바와 같이, 제2 작동영역(40)의 증착 두께(t2)는 상기 제1 작동영역(30)의 증착 두께(t1)보다 얇게 구성되되, 메탈리콘 접촉부(10)의 증착 두께(t0)는 상기 제1 작동영역(30)의 증착 두께(t1)보다 두껍고, 제1 작동영역(30)의 증착 두께(t1)는 제2 작동영역(40)는 상기 제2 작동영역(40)의 증착 두께(t2)보다 두껍다. In addition, as illustrated in FIGS. 3 and 4, the deposition thickness t2 of the second operating region 40 is thinner than the deposition thickness t1 of the first operating region 30. E) is thicker than the deposition thickness t1 of the first operating region 30, and the deposition thickness t1 of the first operating region 30 is the second operating region 40. It is thicker than the deposition thickness t2 of the operating region 40.
또한, 도 3, 도 4에 도시된 바와 같이, 상부 증착필름(100)의 제1 작동영역(30)과 상기 상부 증착필름(100)과 폭방향으로 대향되게 하부에 위치한 하부 증착필름(200)의 제1 작동영역(30)이 서로 겹치지 않도록 형성되어 미겹침 영역(B)가 형성되어 상기 상부 증착필름(100)의 제1 작동영역(30) 끝단(30a)의 하부에 하부 증착필름(200)의 제2 작동영역(40)이 위치한다. 3 and 4, the lower deposition film 200 positioned below the first operating region 30 of the upper deposition film 100 and the upper deposition film 100 in the width direction thereof. The first operating region 30 is formed so as not to overlap with each other overlapping region (B) is formed so that the lower deposition film 200 at the lower end of the end 30a of the first operating region 30 of the upper deposition film 100 Is located in the second operating area 40.
도 3, 4에 도시된 바와 같이, 본 발명의 실시예 따른 다단식 커패시터용 증착 필름에 있어서, 메탈리콘 접촉부(10)의 증착 두께(t0)는 상기 제1 작동영역(30)의 증착 두께(t1)보다 크고, 제1 작동영역(30)의 증착 두께(t1)는 제2 작동영역(40)는 상기 제2 작동영역(40)의 증착 두께(t2)보다 크고, 메탈리콘 접촉부(10)의 증착 저항은 3±2 Ω/cm2이고, 및 제1 작동영역(30)의 증착 저항은 15±10 Ω/cm2이고, 제2 작동영역(40)의 증착 저항은 60±50(또는 40±30) Ω/cm2인 것이 바람직하다. 상기 단위면적당 저항 영역에서 종래 기술과 같은 커패시터 성능을 발휘하면서 발열성 감소 및 자기 회복 특성이 우수하고 실제 양산 가능한 금속 증착 유전체 필름을 제공할 수 있다. 3 and 4, in the deposition film for a multi-stage capacitor according to an embodiment of the present invention, the deposition thickness t0 of the metal silicon contact 10 is the deposition thickness t1 of the first operating region 30. Greater than, the deposition thickness t1 of the first operating region 30 is greater than the deposition thickness t2 of the second operating region 40, and the deposition resistance of the metallic contact portion 10 is greater. Is 3 ± 2 Ω / cm 2 , and the deposition resistance of the first operating region 30 is 15 ± 10 Ω / cm 2 , and the deposition resistance of the second operating region 40 is 60 ± 50 (or 40 ± 30). ) Is preferably Ω / cm 2 . It is possible to provide a metal-deposited dielectric film having excellent heat generation reduction and self-healing characteristics and being capable of mass production while exhibiting capacitor performance as in the prior art in the resistance area per unit area.
도 3, 4에 도시된 바와 같이, 본 발명의 실시예 따른 3단식 커패시터용 증착 필름에 있어서, 상부 증착필름(100)의 제1 작동영역(30)과 상기 상부 증착필름(100)과 폭방향으로 대향되게 하부에 위치한 하부 증착필름(200)의 제1 작동영역(30)이 서로 겹치지 않도록 형성되어 미겹침 영역(B)가 형성되어 상기 상부 증착필름(100)의 제1 작동영역(30) 끝단(30a)의 하부에 하부 증착필름(200)의 제2 작동영역(40)이 위치하고, 메탈리콘 접촉부(10)의 폭(W3)은 3 ~ 8mm이고, "메탈리콘 접촉부(10)의 폭(W3) + 제1 작동영역(30)의 폭(W1)"은 상기 유전체(1)의 전체폭(W)의 0.2 ~ 0.49 배(또는 0.2 초과 ~ 0.5 미만 배)인 것이 바람직하다. 제1 작동영역(30)의 폭(W1)이 너무 커지는 경우 자기 회복성이 떨어지고, 제2 작동영역(40)의 폭(W2)이 너무 커지는 경우 발열 및 산화가 증가되는 문제점이 발생하기 때문에 상기 범위가 시험결과 적합함을 알 수 있었다.3 and 4, in the three-stage capacitor deposition film according to an embodiment of the present invention, the first operation region 30 and the upper deposition film 100 and the width direction of the upper deposition film 100 The first operating region 30 of the lower deposition film 200 positioned below to face each other is formed so as not to overlap each other, so that the overlapping region B is formed to form the first operating region 30 of the upper deposition film 100. The second operating region 40 of the lower deposition film 200 is positioned below the end 30a, and the width W3 of the metal silicon contact 10 is 3 to 8 mm, and the width W3 of the metal contact 10 is shown. The width W1 " of the first operating region 30 " is preferably 0.2 to 0.49 times (or more than 0.2 to less than 0.5 times) the total width W of the dielectric 1. When the width W1 of the first operating region 30 is too large, the self-healing property is inferior, and when the width W2 of the second operating region 40 is too large, heat generation and oxidation are increased. The range was found to be appropriate for the test results.
마진부와 끝에 유전체 필름이 겹치지 않는 부분을 고려할 때 적어도 3mm 이상이 필요하며 8mm 넘는 경우 Heavy Edge Area가 필요 이상으로 커진게 된다. 비율이 0.2 ~ 0.5 배인 경우, 메탈리콘 접촉부(10)의 폭(W3)을 3 ~ 8mm로 하고, 유전체 전체 폭을 50 mm 로 할 때 미겹침 영역(B)의 폭 2 ~ 30mm를 확보할 수 있다. "메탈리콘 접촉부(10)의 폭(W3) + 제1 작동영역(30)의 폭(W1)"은 상기 유전체(1)의 전체폭(W)의 0.3 ~ 0.5 배이고, 유전체 전체폭이 50mm 정도 일때 2 ~ 30mm의 미겹침 영역이 확보된다. 미겹침 영역의 크기가 2mm 이하가 되면 금속 진공증착시 명확한 에지 구분이 생기지 않는 경우 생산시 겹치는 부분이 발생하여 본 발명이 구하는 목적을 달성하지 못하는 영역(자기 회복 특성이 떨어지는 영역)이 생길수 있으며, 미겹침 영역이 너무 넓으면 제2 작동영역(40)이 너무 과대하여 지는 문제점이 있다.Considering the margin and the portion where the dielectric film does not overlap at the end, at least 3 mm or more is required, and when it exceeds 8 mm, the heavy edge area becomes larger than necessary. When the ratio is 0.2 to 0.5 times, when the width W3 of the metal silicon contact portion 10 is 3 to 8 mm, and the overall width of the dielectric material is 50 mm, the width 2 to 30 mm of the overlapped region B can be secured. . When the width W3 of the metal contact portion 10 + the width W1 of the first operating region 30 is 0.3 to 0.5 times the total width W of the dielectric 1 and the dielectric width is about 50 mm Overlap areas of 2 to 30 mm are secured. When the size of the overlapped region is less than 2mm, if there is no clear edge separation during the vacuum deposition of metal, overlapping portions may occur during production, which may result in regions (regions with low self-recovery characteristics) that do not achieve the object of the present invention. If the overlap region is too wide, there is a problem that the second operating region 40 is too large.
본 발명의 일실시예 따른 다단식 커패시터용 증착 필름에 있어서, 유전체 필름에 증착된 금속이 습기 및 장시간 보관시 산화되는 현상을 개선하기 위해, 금속 진공 증착 후 증착금속 코팅된 부분에 오일이 도포될 수 있으며, 오일은 실리콘계 또는 불소계 오일 중에서 선택된 하나이고, 증착시 증착기 내부에서 오일의 온도를 90~170℃로 가열시 증착 코팅 부분에 균일하게 코팅되어 산화 방지 효과가 크다. 즉, 유전체 필름에 증착된 금속이 습기 및 장시간 보관시 산화되는 현상을 개선하기 위해, 금속 진공 증착 후 증착금속이 코팅된 부분에 오일이 더 코팅되는 것이 바람직하다. 오일은 실리콘계 또는 불소계 오일 중에서 선택된 하나이고, 진공 증착기 내에서 오일 온도를 90~170℃로 가열하여 증발된 오일이 금속 증착부나, 금속 증착부 및 마진부에 코팅되는 것이 바람직하다.In the deposition film for a multi-stage capacitor according to an embodiment of the present invention, in order to improve the phenomenon that the metal deposited on the dielectric film is oxidized during moisture and long-term storage, oil may be applied to the deposited metal coated portion after metal vacuum deposition. In addition, the oil is one selected from silicon-based or fluorine-based oils, and is uniformly coated on the deposition coating part when the temperature of the oil is heated to 90 to 170 ° C. inside the vapor deposition machine during deposition, thereby increasing the anti-oxidation effect. That is, in order to improve the phenomenon that the metal deposited on the dielectric film is oxidized when stored in moisture and for a long time, it is preferable that the oil is further coated on a portion coated with the deposited metal after metal vacuum deposition. The oil is one selected from silicon-based or fluorine-based oils, and the oil evaporated by heating the oil temperature to 90-170 ° C. in the vacuum evaporator is preferably coated on the metal evaporation part, the metal evaporation part and the margin part.
이하에서 본 발명 및 비교예에 대한 시험 결과에 대하여 설명한다. 커패시터 온도상승 수식은 다음과 같이 산출할 수 있다. Hereinafter, the test results of the present invention and the comparative example will be described. The capacitor temperature rise equation can be calculated as follows.
△T(℃) = I^2 ×ESR (△T = 온도상승분, I = 리플전류, ESR = 직렬등가 저항 ). ΔT (° C) = I ^ 2 × ESR (△ T = temperature rise, I = ripple current, ESR = series equivalent resistance).
커패시터 용량은 다음과 같은 수식에 결정된다. C = ( ε X S ) / d ( C = 커패시터 용량, ε = 유전율, S = PN극 대향면적, d = 유전체 두께).Capacitor capacity is determined by the following formula. C = (ε X S) / d (C = capacitor capacity, ε = dielectric constant, S = PN pole facing area, d = dielectric thickness).
종래기술, 및 본 발명의 실시예 안으로 커패시터에 적용하여 하이브리드, 전기자동차용 인버터에 내장하여 시험결과 아래와 같은 시험결과를 득하였다. 버스바가 커패시터 셀 밑면에 배치하고 PN극 버스바를 나란히 겹치고 겹친 사이에 절연체 내장한 저인덕턴스 및 냉각 효율 극대한 커패시터이다. 수냉식 또는 공냉식의 경우, 냉각수 또는 차가운 공기가 커패시터 바닥면(인버터 하우징 히트씽크)에 흐르도록 제작할 수 있다. 또한, 커패시터 바닥면 반대편은 소자 내부로부터 열을 흡수하여 외부로 발산 시키는 구조 히트 싱크를 부착할 수 있다. 본 시험결과 냉각수가 직접 흐르도록 하는 것이 가장 효과가 우수하였다.In the prior art, and the embodiment of the present invention was applied to a capacitor and embedded in an inverter for hybrid and electric vehicles, and the test results were obtained as follows. Busbars are low-inductance and cooling-efficient capacitors placed on the underside of the capacitor cell and insulated between PN pole busbars side by side. In the case of water-cooled or air-cooled, coolant or cold air can be made to flow on the bottom of the capacitor (inverter housing heatsink). In addition, the opposite side of the capacitor may be attached to a structure heat sink that absorbs heat from the inside of the device and dissipates to the outside. In this test, direct cooling water flowed best.
표 1은 시험조건 : 링크전압 = 650Vdc, 스위칭 주파수 = 16KHz, 리플전류 = 80Arms, 주위온도 = 85℃, 자연 냉각 방식으로 시험한 시험결과를 보여준다. 유전체 증착필름은 서로 다르게 하고 다른 부분은 도 7과 같은 시스템으로 하였다. 온도 측정 지점은 셀 하부, P극 버스바, N극 버스바, Cell Top로 하고 도시된 온도는 Hot Spot(최고 온도 지점)을 기준으로 하였다.Table 1 shows the test results for the test conditions: link voltage = 650Vdc, switching frequency = 16KHz, ripple current = 80Arms, ambient temperature = 85 ℃, and natural cooling. The dielectric deposition films were different from each other, and the other parts were made as shown in FIG. Temperature measurement points were the cell bottom, P-pole busbar, N-pole busbar, and Cell Top, and the temperatures shown were based on hot spots.
표 1
구 분 증착저항 : Ω/cm2 자재비,사이즈 특성,내구성
메탈리콘 접촉부 제1 작동영역 제2 작동영역 자재비 사이즈 ESR 온도상승(ΔT)℃ 온도상승(냉각수 미순환) 온도상승(냉각수 순환) 파괴시험 내구성시험 열충격시험 내한성시험
패턴 필름:도 5비교예 3±2 13±5 - 104%~110% 104%~110% 1mΩ 6.4 91.4※기준 81.5 ○ ○ ◎ ◎
실시예 :도 3 3±2 15±10 60±50 100% 100% 0.5mΩ 3.2 88.2※B 78.3※D ◎ ◎ ◎ ◎
Table 1
division Deposition Resistance: Ω / cm 2 Material cost, size Characteristics, durability
Metallic contact First operating area Second operating area Material cost size ESR Temperature rise (ΔT) ℃ Temperature rise (cooling water not circulated) Temperature rise (cooling water circulation) Fracture Test Durability test Thermal shock test Cold resistance test
Pattern film: Fig. 5 Comparative Example 3 ± 2 13 ± 5 - 104%-110% 104%-110% 1mΩ 6.4 91.4 ※ Standard 81.5 ○ ○ ◎ ◎
Example: Figure 3 3 ± 2 15 ± 10 60 ± 50 100% 100% 0.5mΩ 3.2 88.2 * B 78.3 * D ◎ ◎ ◎ ◎
◎(매우 양호) > ○ (양호) > △ (보통) > × (나쁨)◎ (very good)> ○ (good)> △ (normal)> × (bad)
표 2
구 분 증착저항 : Ω/cm2 자재비,사이즈 특성,내구성
메탈리콘 접촉부 제1 작동영역 제2 작동영역 자재비 사이즈 필름 Loss Size
패턴 필름:도 5비교예 3±2 13±5 - 104%~110% 104%~110% 있음× ×커짐
실시예 :도4 3±2 15±10 60±50 100% 100% 없슴◎ ◎
TABLE 2
division Deposition Resistance: Ω / cm 2 Material cost, size Characteristics, durability
Metallic contact First operating area Second operating area Material cost size Film loss Size
Pattern film: Fig. 5 Comparative Example 3 ± 2 13 ± 5 - 104%-110% 104%-110% Yes × X size
Example 4 3 ± 2 15 ± 10 60 ± 50 100% 100% None ◎ ◎
◎(매우 양호) > ○ (양호) > △ (보통) > × (나쁨)◎ (very good)> ○ (good)> △ (normal)> × (bad)
비교예 냉각수 미순환(※기준) 대비, 실시예, 냉각수 미순환(※C)의 경우 3.2℃시 감소 효과가 있었고, 실시예, 냉각수 순환(※D)의 경우 9.9℃ 감소 효과가 있었다.Comparative Example Compared with the non-circulating cooling water (※ standard), the Example, the cooling water non-circulating (※ C) had a reduction effect at 3.2 ° C., and the Example, the cooling water circulation (※ D) had a reduction effect of 9.9 ° C.
도 6에 도시된 수명표를 따를 때, 기존 직접 냉각 기능이 없는 경우 약 91.4를 95로 가정하고 커패시터 650V에서 사용시 예측 수명은 약 9,000시간이고 커패시터 바닥면을 냉각수가 냉각시 커패시터 온도상승 78.3를 85로 가정하고 커패시터를 650V로 사용시 수명예측은 약 32,000시간으로, 약 23,000시간 더 수명을 연장할 수 있게 되었다. According to the life chart shown in FIG. 6, when there is no existing direct cooling function, it is assumed that about 91.4 is 95, and when used at a capacitor 650V, the life expectancy is about 9,000 hours and the capacitor temperature rise 78.3 when cooling water is cooled on the bottom of the capacitor. If the capacitor is used at 650V, the life expectancy is about 32,000 hours, which can extend the life of about 23,000 hours.
본 발명은 상기에서 언급한 바람직한 실시예와 관련하여 설명됐지만, 본 발명의 범위가 이러한 실시예에 한정되는 것은 아니며, 본 발명의 범위는 이하의 특허청구범위에 의하여 정하여지는 것으로 본 발명과 균등 범위에 속하는 다양한 수정 및 변형을 포함할 것이다.Although the present invention has been described in connection with the above-mentioned preferred embodiments, the scope of the present invention is not limited to these embodiments, and the scope of the present invention is defined by the following claims, and equivalent scope of the present invention. It will include various modifications and variations belonging to.
아래의 특허청구범위에 기재된 도면부호는 단순히 발명의 이해를 보조하기 위한 것으로 권리범위의 해석에 영향을 미치지 아니함을 밝히며 기재된 도면부호에 의해 권리범위가 좁게 해석되어서는 안될 것이다.The reference numerals set forth in the claims below are merely to aid the understanding of the present invention, not to affect the interpretation of the scope of the claims, and the scope of the claims should not be construed narrowly.
본 발명에 따르는 경우, 증착 필름을 다단식으로 구현하여 저항이 높을 때(두께가 얇을때)의 장점인 자기 회복 우수성과, 저항이 낮을 때의 발열량 감소 및 산화현상 감소의 장점을 선택적으로 취한 3단식 커패시터용 증착 필름이 제공된다. According to the present invention, by implementing the deposition film in multiple stages, a three-stage type that selectively takes advantage of excellent self-healing when the resistance is high (when the thickness is thin) and reduction of calorific value and oxidation phenomenon when the resistance is low. A deposition film for a capacitor is provided.
본 발명에 따르는 경우, 패턴 필름을 사용하지 않고 얇은 구조의 제2 작동영역(40)에 의해 자기회복성을 우수하게 하면서, 동시에 상대적으로 두껍고 저항인 제1 작동영역(30)에 의해 커패시터의 온도 상승을 줄일 수 있으며, 자기회복성 증가와 반비례하는 증착 필름 취급시 증착부의 산화에 의한 커패시터 내구성이 저하를 줄일 수 있는 3단식 커패시터용 증착 필름이 제공된다. According to the present invention, the temperature of the capacitor is improved by the relatively thick and resistive first operating region 30 while excellent in self-recoverability by the second operating region 40 having a thin structure without using a pattern film. There is provided a deposition film for a three-stage capacitor that can reduce the rise and reduce the durability of the capacitor due to oxidation of the deposition portion when handling the deposition film inversely proportional to the increase in self-recovery.
본 발명에 따르는 경우, 종래의 Pattern Film Capacitor가 자재비 및 사이즈가 4 ~ 10% 더 소요되고 커지는 단점과, 종래의 Non Pattern Film Capacitor는 Self Healing이 되지 않으면 내압 불량이 발생하고 2차적인 재해를 방지하기 위해서 보안장치를 내장하므로 자재비 상승 및 사이즈가 커지는 문제점을 모두 해결한 3단식 커패시터용 증착 필름이 제공된다. In the case of the present invention, the disadvantage that the conventional pattern film capacitor takes 4 to 10% more in material cost and size and becomes larger, and the conventional non-pattern film capacitor does not have self-healing, which causes poor pressure resistance and prevents secondary disasters. The built-in security device is provided in order to provide a three-stage capacitor deposition film that solves both the cost increase and the size increase.
본 기술은 하이브리드 자동차, 전기자동차, 수소연료전지 자동차 플러그인 전기자동차 등 인버터용 필름 커패시터에 적용되지만 일반 산업용으로 기술을 응용하여 사용할 수 있다. 종래 기술은 자기 회복성 증가를 위하여 금속증착 저항이 높이는 경우, 외부 습기에 노출되거나 장기간 보관시 금속 증착저항이 산화되면서 저항 값이 상승하는 문제점이 있었는데 본 기술의 경우 금속증착시 증착금속이 플라스틱 필름에 잘 접착되어 종래의 습기 및 장시간 보관시 산화되는 현상을 개선하였다. 종래 기술은 금속증착 저항이 높아지면서 외부 습기에 노출되거나 장기간 보관시 금속 증착저항이 산화되면 문제점이 있었는데 진공 증착 후 증착금속 코팅된 부분에 오일을 코팅하면 진공 증착 후 증착금속 코팅된 부분에 미량의 오일을 코팅하면 플라스틱 필름에 금속증착된 금속이 습기 및 장시간 보관시 산화되는 현상을 개선하였다. 특히, Zn 증착시 사용하면 금속증착 저항 산화를 현격히 감소시키는 효과가 두드러졌다. 또한, 증착 금속 증착된 부분에 오일을 균일하게 코팅이 가능해지고증착된 금속막에 오일에 코팅되어 있어서 습기와 반응이 최소화하여 증착금속을 산화시키는 문제점을 개선하였다.The technology is applied to film capacitors for inverters such as hybrid vehicles, electric vehicles, hydrogen fuel cell vehicles, plug-in electric vehicles, etc., but the technology can be applied to general industrial applications. In the prior art, when the metal deposition resistance is increased in order to increase self-healing, the resistance value increases as the metal deposition resistance is oxidized when exposed to external moisture or stored for a long time. It adheres well to the conventional moisture and improves the phenomenon of oxidation during long time storage. The prior art had a problem when the metal deposition resistance was exposed to external moisture and the metal deposition resistance was oxidized during long-term storage as the metal deposition resistance increased. However, if the oil is coated on the deposited metal coated portion after vacuum deposition, a small amount of the deposited metal coated portion is deposited after vacuum deposition. Coating the oil improves the phenomenon that the metal deposited on the plastic film is oxidized after moisture and long time storage. In particular, when the Zn deposition is used, the effect of significantly reducing the metal deposition resistance oxidation was remarkable. In addition, since the oil can be uniformly coated on the deposited metal and the metal film is deposited on the deposited metal film, the problem of oxidizing the deposited metal is minimized by minimizing moisture and reaction.

Claims (6)

  1. 금속이 증착되고 2매 1조로 대향되게 겹쳐서 이루어지는 커패시터용 증착 필름에 있어서,In the vapor deposition film for capacitors in which a metal is deposited and overlapped in a pair of two sheets,
    유전체(1)의 폭방향 일측단(1a)에 커패시터의 메탈리콘과 통전하는 메탈리콘 접촉부(10)가 금속 증착으로 형성되고, 상기 유전체(1)의 폭방향 타측단(1b)에 금속이 증착되지 않은 마진부(20)가 형성되고, 상기 메탈리콘 접촉부(10)와 마진부(20) 사이에 금속이 증착되어 작동영역(A)이 형성되되,Metallic contact portions 10 that conduct current with the metal silicon of the capacitor are formed on the widthwise one end 1a of the dielectric 1 by metal deposition, and no metal is deposited on the widthwise other end 1b of the dielectric 1. A margin part 20 is formed, and a metal is deposited between the metal silicon contact part 10 and the margin part 20 to form an operation region A.
    상기 작동 영역(A)은, 유전체(1)의 폭방향 일측에 위치하고 상기 메탈리콘 접촉부(10)에 인접하는 제1 작동영역(30)과,The operating region A may include a first operating region 30 located at one side in the width direction of the dielectric 1 and adjacent to the metallic contact portion 10.
    유전체(1)의 폭방향 타측에 위치하고 상기 마진부(20)에 인접하는 제2 작동영역(40)으로 구성되고,A second operating region 40 positioned on the other side in the width direction of the dielectric 1 and adjacent to the margin portion 20,
    상기 제2 작동영역(40)의 증착 두께(t2)는 상기 제1 작동영역(30)의 증착 두께(t1)보다 얇게 구성되되,The deposition thickness t2 of the second operating region 40 is configured to be thinner than the deposition thickness t1 of the first operating region 30.
    상기 메탈리콘 접촉부(10)의 증착 두께(t0)는 상기 제1 작동영역(30)의 증착 두께(t1)보다 두껍고,The deposition thickness t0 of the metal silicon contact 10 is thicker than the deposition thickness t1 of the first operating region 30.
    상기 제1 작동영역(30)의 증착 두께(t1)는 제2 작동영역(40)는 상기 제2 작동영역(40)의 증착 두께(t2)보다 두껍고,The deposition thickness t1 of the first operating region 30 is greater than the deposition thickness t2 of the second operating region 40.
    상부 증착필름(100)의 제1 작동영역(30)과 상기 상부 증착필름(100)과 폭방향으로 대향되게 하부에 위치한 하부 증착필름(200)의 제1 작동영역(30)이 서로 겹치지 않도록 형성되어 미겹침 영역(B)가 형성되어 상기 상부 증착필름(100)의 제1 작동영역(30) 끝단(30a)의 하부에 하부 증착필름(200)의 제2 작동영역(40)이 위치하는 것을 특징으로 하는 3단식 커패시터용 증착 필름.The first operating region 30 of the upper deposition film 100 and the first operating region 30 of the lower deposition film 200 positioned below to face the width of the upper deposition film 100 are formed so as not to overlap each other. The overlapping region B is formed so that the second operating region 40 of the lower deposition film 200 is positioned below the end 30a of the first operating region 30 of the upper deposition film 100. Deposition film for a three-stage capacitor.
  2. 제1항에 있어서,The method of claim 1,
    상기 메탈리콘 접촉부(10)의 증착 저항은 3±2 Ω/cm2이고,The deposition resistance of the metal silicon contact 10 is 3 ± 2 Ω / cm 2 ,
    및 제1 작동영역(30)의 증착 저항은 15±10 Ω/cm2이고,And the deposition resistance of the first operating region 30 is 15 ± 10 Ω / cm 2 ,
    상기 제2 작동영역(40)의 증착 저항은 60±50 Ω/cm2이고,The deposition resistance of the second operating region 40 is 60 ± 50 Ω / cm 2 ,
    "메탈리콘 접촉부(10)의 폭(W3) + 제1 작동영역(30)의 폭(W1)"은 상기 유전체(1)의 전체폭(W)의 0.2 ~ 0.49 배인 것을 특징으로 하는 3단식 커패시터용 증착 필름."Width W3 of the metal contact portion 10 + width W1 of the first operating region 30" is 0.2 to 0.49 times the full width W of the dielectric 1 for a three-stage capacitor Deposited film.
  3. 제2항에 있어서,The method of claim 2,
    상기 메탈리콘 접촉부(10, 강하부)의 증착 금속은 알루미늄, 아연, 알루미늄과 아연 혼용 금속, 알루미늄과 아연과 구리 혼용 금속, 알루미늄과 아연과 은 혼용 금속, 중에서 선택된 하나이고, The deposited metal of the metal silicon contact portion 10 (lower portion) is one selected from aluminum, zinc, aluminum and zinc mixed metal, aluminum and zinc and copper mixed metal, aluminum and zinc and silver mixed metal,
    상기 제1 작동영역(30) 및 제2 작동영역(40)의 증착 금속은 알루미늄, 알루미늄과 아연의 혼용 금속, 알루미늄과 아연과 은 혼용된 금속, 중에 선택된 하나이고,The deposition metal of the first operating region 30 and the second operating region 40 is one selected from aluminum, a mixed metal of aluminum and zinc, a metal mixed with aluminum, zinc and silver,
    상기 미겹침 영역(B)의 폭은 2 ~ 30mm 인 것을 특징으로 하는 3단식 커패시터용 증착 필름. Deposition film of the three-stage capacitor, characterized in that the width of the overlapping region (B) is 2 ~ 30mm.
  4. 제3항에 있어서,The method of claim 3,
    유전체 필름에 증착된 금속이 습기 및 장시간 보관시 산화되는 현상을 개선하기 위해, In order to improve the phenomenon that the metal deposited on the dielectric film is oxidized during moisture and long time storage,
    금속 진공 증착 후 증착금속이 코팅된 부분에 오일이 더 코팅되는 것을 특징으로 하는 3단식 커패시터용 증착 필름.Deposition film for a three-stage capacitor, characterized in that the oil is further coated on the metal-coated portion after the metal vacuum deposition.
  5. 제4항에 있어서,The method of claim 4, wherein
    상기 오일은 실리콘계 또는 불소계 오일 중에서 선택된 하나이고,The oil is one selected from silicone-based or fluorine-based oils,
    진공 증착기 내에서 오일 온도를 90~170℃로 가열하여 증발된 오일이 금속 증착부나, 금속 증착부 및 마진부에 코팅되는 것을 특징으로 하는 3단식 커패시터용 증착 필름.The deposition film for a three-stage capacitor, characterized in that the oil evaporated by heating the oil temperature to 90 ~ 170 ℃ in the vacuum evaporator is coated on the metal deposition portion, the metal deposition portion and the margin portion.
  6. 제1항 내지 제5항 중에서 선택된 어느 하나의 3단식 커패시터용 증착 필름을 포함하는 방열성 개선 커패시터.A heat dissipation improving capacitor comprising a deposition film for any one of three-stage capacitor selected from claim 1.
PCT/KR2015/011624 2014-11-03 2015-11-02 Deposition film for triple layer capacitor and capacitor having improved heat dissipation WO2016072671A1 (en)

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