WO2016072671A1 - Film de dépôt pour condensateur triple couche, et condensateur à dissipation de chaleur améliorée - Google Patents

Film de dépôt pour condensateur triple couche, et condensateur à dissipation de chaleur améliorée Download PDF

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Publication number
WO2016072671A1
WO2016072671A1 PCT/KR2015/011624 KR2015011624W WO2016072671A1 WO 2016072671 A1 WO2016072671 A1 WO 2016072671A1 KR 2015011624 W KR2015011624 W KR 2015011624W WO 2016072671 A1 WO2016072671 A1 WO 2016072671A1
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WIPO (PCT)
Prior art keywords
deposition
metal
operating region
film
capacitor
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PCT/KR2015/011624
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English (en)
Korean (ko)
Inventor
박대진
전용원
한기주
박진아
Original Assignee
주식회사 뉴인텍
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Application filed by 주식회사 뉴인텍 filed Critical 주식회사 뉴인텍
Publication of WO2016072671A1 publication Critical patent/WO2016072671A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/32—Wound capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/10—Metal-oxide dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors 

Definitions

  • the present invention relates to a deposition film for a three-stage capacitor and a heat dissipation improving capacitor.
  • Non-pattern deposition film deposition resistance is usually used.
  • Self Healing when there is a weak point in the film dielectric, short-circuit occurs between PN poles, the deposited metal is carbonized and insulation is recovered to maintain the function of the capacitor. It is called Self Healing.
  • the self-recovered part is very small, there is an advantage that the capacity hardly decreases.
  • the self-recovered part is not self-recovered at the weak point, there is a disadvantage that the breakdown voltage is generated due to the insulation force between the PN poles.
  • 1 is a view illustrating the concept of a self-healing phenomenon (Self Healing).
  • the white part on the right is carbonized and non-conductive, and when it is carbonized on the opposite side, self-healing (ambient and insulated) occurs in that area, making it inactive.
  • Capacitors in non-pattern deposited films have the following security devices in order to solve the problem of a secondary breakdown caused by a breakdown of voltage when the self-recovery is not performed. If the self-recovery phenomenon of the film capacitor is not self-recovering, the insulation force drops and shorts between the PN poles, the film melts, and the gas pressure is generated inside to open the pressure fuse (security device) to prevent secondary disasters. It was. This method has good performance but has the disadvantage of requiring space for the pressure fuse and increasing size and cost.
  • a related patent is the applicant's published patent 10-2011-0087853.
  • a low deposition resistance requires more energy when a self-recovery phenomenon occurs at the wet point, and a large energy damages the capacitor during self-recovery, resulting in a breakdown voltage failure when a repetitive phenomenon occurs.
  • Low has the advantage that the deposited metal is not oxidized.
  • the deposition resistance is high, the self-recoverability is excellent and the capacitor durability life is long due to the weak damage to the capacitor during the self recovery at the wet point.However, when handling the deposited film with high deposition resistance, it is exposed to external moisture or stored for a long time. There is a problem in that the oxidation of the capacitor is lowered due to oxidation.
  • the present invention is to provide a deposition film for a three-stage capacitor by implementing a multi-stage, taking advantage of the excellent self-recovery when the resistance is high (thin thickness) and the reduction of heat generation and reduction of oxidation when the resistance is low. .
  • the present invention provides excellent self-recoverability without using a pattern film, and at the same time reduces the temperature rise of the capacitor, and reduces the durability of the capacitor due to oxidation when the deposition resistance is handled inversely with the increase in self-recoverability. It is to provide a deposition film for a three-stage capacitor that can be.
  • the present invention the disadvantage that the conventional pattern film capacitor takes 4 ⁇ 10% more material cost and size and increases, and the conventional non-pattern film capacitor does not have a self-healing in order to prevent poor pressure and to prevent secondary disasters
  • the built-in security device has been developed with the focus on solving both the problem of material cost increase and size increase.
  • Metallic contact portions 10 that conduct current with the metal silicon of the capacitor are formed on the widthwise one end 1a of the dielectric 1 by metal deposition, and no metal is deposited on the widthwise other end 1b of the dielectric 1.
  • a margin part 20 is formed, and a metal is deposited between the metal silicon contact part 10 and the margin part 20 to form an operation region A.
  • the operating region A may include a first operating region 30 located at one side in the width direction of the dielectric 1 and adjacent to the metallic contact portion 10.
  • a second operating region 40 positioned on the other side in the width direction of the dielectric 1 and adjacent to the margin portion 20,
  • the deposition thickness t2 of the second operating region 40 is configured to be thinner than the deposition thickness t1 of the first operating region 30.
  • the deposition thickness t0 of the metal silicon contact 10 is thicker than the deposition thickness t1 of the first operating region 30.
  • the deposition thickness t1 of the first operating region 30 is greater than the deposition thickness t2 of the second operating region 40.
  • the first operating region 30 of the upper deposition film 100 and the first operating region 30 of the lower deposition film 200 positioned below to face the width of the upper deposition film 100 are formed so as not to overlap each other.
  • the overlapping region B is formed so that the second operating region 40 of the lower deposition film 200 is positioned below the end 30a of the first operating region 30 of the upper deposition film 100.
  • a deposition film for a capacitor is provided.
  • the temperature of the capacitor is improved by the relatively thick and resistive first operating region 30 while excellent in self-recoverability by the second operating region 40 having a thin structure without using a pattern film.
  • a deposition film for a three-stage capacitor that can reduce the rise and reduce the durability of the capacitor due to oxidation of the deposition portion when handling the deposition film inversely proportional to the increase in self-recovery.
  • the built-in security device is provided in order to provide a three-stage capacitor deposition film that solves both the cost increase and the size increase.
  • the technology is applied to film capacitors for inverters such as hybrid vehicles, electric vehicles, hydrogen fuel cell vehicles, plug-in electric vehicles, etc., but the technology can be applied to general industrial applications.
  • the metal deposition resistance when the metal deposition resistance is increased in order to increase self-healing, the resistance value increases as the metal deposition resistance is oxidized when exposed to external moisture or stored for a long time. It adheres well to the conventional moisture and improves the phenomenon of oxidation during long time storage.
  • the prior art had a problem when the metal deposition resistance was exposed to external moisture and the metal deposition resistance was oxidized during long-term storage as the metal deposition resistance increased.
  • the oil is coated on the deposited metal coated portion after vacuum deposition, a small amount of the deposited metal coated portion is deposited after vacuum deposition. Coating the oil improves the phenomenon that the metal deposited on the plastic film is oxidized after moisture and long time storage. In particular, when the Zn deposition is used, the effect of significantly reducing the metal deposition resistance oxidation was remarkable. In addition, since the oil can be uniformly coated on the deposited metal and the metal film is deposited on the deposited metal film, the problem of oxidizing the deposited metal is minimized by minimizing moisture and reaction.
  • 1 is an explanatory diagram of a self-healing phenomenon.
  • Figure 2 is a schematic view of the deposition film according to the prior art.
  • FIG 3 is a cross-sectional view of a deposition film for a three-stage capacitor according to an embodiment of the present invention.
  • Figure 4 is a perspective view of the deposition film winding for a three-stage capacitor according to an embodiment of the present invention.
  • FIG. 5 is a cross-sectional view of a conventional pattern film.
  • Metallic contact portions 10 that conduct current with the metal silicon of the capacitor are formed on the widthwise one end 1a of the dielectric 1 by metal deposition, and no metal is deposited on the widthwise other end 1b of the dielectric 1.
  • a margin part 20 is formed, and a metal is deposited between the metal silicon contact part 10 and the margin part 20 to form an operation region A.
  • the operating region A may include a first operating region 30 located at one side in the width direction of the dielectric 1 and adjacent to the metallic contact portion 10.
  • a second operating region 40 positioned on the other side in the width direction of the dielectric 1 and adjacent to the margin portion 20,
  • the deposition thickness t2 of the second operating region 40 is configured to be thinner than the deposition thickness t1 of the first operating region 30.
  • the deposition thickness t0 of the metal silicon contact 10 is thicker than the deposition thickness t1 of the first operating region 30.
  • the deposition thickness t1 of the first operating region 30 is greater than the deposition thickness t2 of the second operating region 40.
  • the first operating region 30 of the upper deposition film 100 and the first operating region 30 of the lower deposition film 200 positioned below to face the width of the upper deposition film 100 are formed so as not to overlap each other.
  • the overlapping region B is formed so that the second operating region 40 of the lower deposition film 200 is positioned below the end 30a of the first operating region 30 of the upper deposition film 100.
  • FIG. 1 is a schematic diagram illustrating a self-healing phenomenon
  • FIG. 2 is a schematic diagram of a deposition film according to the prior art
  • FIG. 3 is a cross-sectional view of a deposition film for a three-stage capacitor according to an embodiment of the present invention, a plan view
  • FIG. 3 is a perspective view of a deposition film winding for a three-stage capacitor according to a second embodiment of the present invention
  • FIG. 5 is a cross-sectional view of a conventional pattern film
  • the metallic contact is commonly used as a heavy edge area or a dropping part.
  • the three-stage capacitor deposition film of the present invention in the deposition film for capacitors in which metal is deposited and overlapped in a pair of two pieces, the widthwise one end of the dielectric 1 Metallization contact portion 10, which conducts electricity to the metallic silicon of the capacitor, is formed at 1a by metal deposition, and a margin portion 20 in which no metal is deposited is formed at the other end 1b in the width direction of the dielectric 1, A metal is deposited between the metallic contact portion 10 and the margin portion 20 to form an operating region A.
  • the operating region A is located on one side in the width direction of the dielectric 1 and the metallic contact portion 10 is formed.
  • a second operating region 40 adjacent to the margin part 20 and positioned on the other side in the width direction of the dielectric 1.
  • the deposition thickness t2 of the second operating region 40 is thinner than the deposition thickness t1 of the first operating region 30.
  • E) is thicker than the deposition thickness t1 of the first operating region 30, and the deposition thickness t1 of the first operating region 30 is the second operating region 40. It is thicker than the deposition thickness t2 of the operating region 40.
  • the lower deposition film 200 positioned below the first operating region 30 of the upper deposition film 100 and the upper deposition film 100 in the width direction thereof.
  • the first operating region 30 is formed so as not to overlap with each other overlapping region (B) is formed so that the lower deposition film 200 at the lower end of the end 30a of the first operating region 30 of the upper deposition film 100 Is located in the second operating area 40.
  • the deposition thickness t0 of the metal silicon contact 10 is the deposition thickness t1 of the first operating region 30. Greater than, the deposition thickness t1 of the first operating region 30 is greater than the deposition thickness t2 of the second operating region 40, and the deposition resistance of the metallic contact portion 10 is greater. Is 3 ⁇ 2 ⁇ / cm 2 , and the deposition resistance of the first operating region 30 is 15 ⁇ 10 ⁇ / cm 2 , and the deposition resistance of the second operating region 40 is 60 ⁇ 50 (or 40 ⁇ 30). ) Is preferably ⁇ / cm 2 . It is possible to provide a metal-deposited dielectric film having excellent heat generation reduction and self-healing characteristics and being capable of mass production while exhibiting capacitor performance as in the prior art in the resistance area per unit area.
  • the first operation region 30 and the upper deposition film 100 and the width direction of the upper deposition film 100 The first operating region 30 of the lower deposition film 200 positioned below to face each other is formed so as not to overlap each other, so that the overlapping region B is formed to form the first operating region 30 of the upper deposition film 100.
  • the second operating region 40 of the lower deposition film 200 is positioned below the end 30a, and the width W3 of the metal silicon contact 10 is 3 to 8 mm, and the width W3 of the metal contact 10 is shown.
  • the width W1 " of the first operating region 30 " is preferably 0.2 to 0.49 times (or more than 0.2 to less than 0.5 times) the total width W of the dielectric 1. When the width W1 of the first operating region 30 is too large, the self-healing property is inferior, and when the width W2 of the second operating region 40 is too large, heat generation and oxidation are increased. The range was found to be appropriate for the test results.
  • the heavy edge area becomes larger than necessary.
  • the ratio is 0.2 to 0.5 times
  • the width W3 of the metal silicon contact portion 10 is 3 to 8 mm, and the overall width of the dielectric material is 50 mm
  • the width 2 to 30 mm of the overlapped region B can be secured.
  • the width W3 of the metal contact portion 10 + the width W1 of the first operating region 30 is 0.3 to 0.5 times the total width W of the dielectric 1 and the dielectric width is about 50 mm Overlap areas of 2 to 30 mm are secured.
  • the size of the overlapped region is less than 2mm, if there is no clear edge separation during the vacuum deposition of metal, overlapping portions may occur during production, which may result in regions (regions with low self-recovery characteristics) that do not achieve the object of the present invention. If the overlap region is too wide, there is a problem that the second operating region 40 is too large.
  • oil may be applied to the deposited metal coated portion after metal vacuum deposition.
  • the oil is one selected from silicon-based or fluorine-based oils, and is uniformly coated on the deposition coating part when the temperature of the oil is heated to 90 to 170 ° C. inside the vapor deposition machine during deposition, thereby increasing the anti-oxidation effect.
  • the oil is further coated on a portion coated with the deposited metal after metal vacuum deposition.
  • the oil is one selected from silicon-based or fluorine-based oils, and the oil evaporated by heating the oil temperature to 90-170 ° C. in the vacuum evaporator is preferably coated on the metal evaporation part, the metal evaporation part and the margin part.
  • the capacitor temperature rise equation can be calculated as follows.
  • Capacitor capacity is determined by the following formula.
  • Busbars are low-inductance and cooling-efficient capacitors placed on the underside of the capacitor cell and insulated between PN pole busbars side by side. In the case of water-cooled or air-cooled, coolant or cold air can be made to flow on the bottom of the capacitor (inverter housing heatsink).
  • the opposite side of the capacitor may be attached to a structure heat sink that absorbs heat from the inside of the device and dissipates to the outside. In this test, direct cooling water flowed best.
  • the dielectric deposition films were different from each other, and the other parts were made as shown in FIG. Temperature measurement points were the cell bottom, P-pole busbar, N-pole busbar, and Cell Top, and the temperatures shown were based on hot spots.
  • the life expectancy is about 9,000 hours and the capacitor temperature rise 78.3 when cooling water is cooled on the bottom of the capacitor. If the capacitor is used at 650V, the life expectancy is about 32,000 hours, which can extend the life of about 23,000 hours.
  • a deposition film for a capacitor is provided.
  • the temperature of the capacitor is improved by the relatively thick and resistive first operating region 30 while excellent in self-recoverability by the second operating region 40 having a thin structure without using a pattern film.
  • a deposition film for a three-stage capacitor that can reduce the rise and reduce the durability of the capacitor due to oxidation of the deposition portion when handling the deposition film inversely proportional to the increase in self-recovery.
  • the built-in security device is provided in order to provide a three-stage capacitor deposition film that solves both the cost increase and the size increase.
  • the technology is applied to film capacitors for inverters such as hybrid vehicles, electric vehicles, hydrogen fuel cell vehicles, plug-in electric vehicles, etc., but the technology can be applied to general industrial applications.
  • the metal deposition resistance when the metal deposition resistance is increased in order to increase self-healing, the resistance value increases as the metal deposition resistance is oxidized when exposed to external moisture or stored for a long time. It adheres well to the conventional moisture and improves the phenomenon of oxidation during long time storage.
  • the prior art had a problem when the metal deposition resistance was exposed to external moisture and the metal deposition resistance was oxidized during long-term storage as the metal deposition resistance increased.
  • the oil is coated on the deposited metal coated portion after vacuum deposition, a small amount of the deposited metal coated portion is deposited after vacuum deposition. Coating the oil improves the phenomenon that the metal deposited on the plastic film is oxidized after moisture and long time storage. In particular, when the Zn deposition is used, the effect of significantly reducing the metal deposition resistance oxidation was remarkable. In addition, since the oil can be uniformly coated on the deposited metal and the metal film is deposited on the deposited metal film, the problem of oxidizing the deposited metal is minimized by minimizing moisture and reaction.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

En ce qui concerne un film de dépôt pour un condensateur formé de deux couches empilées sous la forme d'un seul groupe se faisant face avec un métal déposé sur elles, l'invention porte sur un film de dépôt pour condensateur triple couche qui est caractérisé en ce que : une partie de connexion de contact métallisé (10) connectée électriquement à un contact métallisé du condensateur est formée sur une extrémité latérale (1a) dans le sens de la largeur d'un diélectrique (1) par dépôt de métal ; une partie marge (20) est formée sur l'autre extrémité latérale (1b) dans le sens de la largeur du diélectrique (1), sur laquelle du métal n'est pas déposé ; et du métal est déposé entre la partie de connexion de contact métallisé (10) et la partie marge (20) afin de former une région de fonctionnement (A). La région de fonctionnement (A) est constituée : d'une première région de fonctionnement (30) disposée d'un côté dans le sens de la largeur du diélectrique (1) et adjacente à la partie de connexion de contact métallisé (10) ; et d'une seconde région de fonctionnement (40) disposée de l'autre côté dans le sens de la largeur du diélectrique (1) et adjacente à la partie marge (20). L'épaisseur de dépôt (t2) de la seconde région de fonctionnement (40) est plus mince que l'épaisseur de dépôt (t1) de la première région de fonctionnement (30), l'épaisseur de dépôt (t0) de la partie de connexion de contact métallisé (10) est plus épaisse que l'épaisseur de dépôt (t1) de la première région de fonctionnement (30), et l'épaisseur de dépôt (t1) de la première région de fonctionnement (30) est plus épaisse que l'épaisseur de dépôt (t2) de la seconde région de fonctionnement (40).
PCT/KR2015/011624 2014-11-03 2015-11-02 Film de dépôt pour condensateur triple couche, et condensateur à dissipation de chaleur améliorée WO2016072671A1 (fr)

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KR1020140150836A KR101573247B1 (ko) 2014-11-03 2014-11-03 3단식 커패시터용 증착 필름
KR10-2014-0150836 2014-11-03

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200294716A1 (en) * 2018-02-05 2020-09-17 Murata Manufacturing Co., Ltd. Film capacitor
US20200335283A1 (en) * 2018-02-05 2020-10-22 Murata Manufacturing Co., Ltd. Film capacitor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102063782B1 (ko) * 2018-07-27 2020-01-08 삼화콘덴서공업 주식회사 필름 커패시터

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JP2001044057A (ja) * 1999-07-30 2001-02-16 Matsushita Electric Ind Co Ltd 段付蒸着フィルムの製造方法および製造装置
JP2009000957A (ja) * 2007-06-25 2009-01-08 Toray Ind Inc コンデンサ用金属蒸着フィルム、及びそれを用いた金属化フィルムコンデンサ
JP2009277830A (ja) * 2008-05-14 2009-11-26 Panasonic Corp 金属化フィルムコンデンサ
JP2012009764A (ja) * 2010-06-28 2012-01-12 Daikin Ind Ltd フィルムコンデンサ
KR20130114909A (ko) * 2012-04-10 2013-10-21 삼화콘덴서공업주식회사 커패시터

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CN202025647U (zh) * 2011-04-07 2011-11-02 安徽湖滨电子科技有限公司 一种金属化电容器用油式抗氧化薄膜结构
CN103578754A (zh) * 2013-10-15 2014-02-12 铜陵其利电子材料有限公司 电容器用渐变方阻铝锌金属化膜

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JP2001044057A (ja) * 1999-07-30 2001-02-16 Matsushita Electric Ind Co Ltd 段付蒸着フィルムの製造方法および製造装置
JP2009000957A (ja) * 2007-06-25 2009-01-08 Toray Ind Inc コンデンサ用金属蒸着フィルム、及びそれを用いた金属化フィルムコンデンサ
JP2009277830A (ja) * 2008-05-14 2009-11-26 Panasonic Corp 金属化フィルムコンデンサ
JP2012009764A (ja) * 2010-06-28 2012-01-12 Daikin Ind Ltd フィルムコンデンサ
KR20130114909A (ko) * 2012-04-10 2013-10-21 삼화콘덴서공업주식회사 커패시터

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200294716A1 (en) * 2018-02-05 2020-09-17 Murata Manufacturing Co., Ltd. Film capacitor
US20200335283A1 (en) * 2018-02-05 2020-10-22 Murata Manufacturing Co., Ltd. Film capacitor
US11664161B2 (en) * 2018-02-05 2023-05-30 Murata Manufacturing Co., Ltd. Film capacitor
US11710603B2 (en) * 2018-02-05 2023-07-25 Murata Manufacturing Co., Ltd. Film capacitor

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KR101573247B1 (ko) 2015-12-02
CN105118669A (zh) 2015-12-02
CN205335083U (zh) 2016-06-22

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