CN205335083U - Carry for condenser deposited film of high heat dissipating and light -weighted syllogic - Google Patents
Carry for condenser deposited film of high heat dissipating and light -weighted syllogic Download PDFInfo
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- CN205335083U CN205335083U CN201520752792.8U CN201520752792U CN205335083U CN 205335083 U CN205335083 U CN 205335083U CN 201520752792 U CN201520752792 U CN 201520752792U CN 205335083 U CN205335083 U CN 205335083U
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- 230000008021 deposition Effects 0.000 claims abstract description 77
- 239000002184 metal Substances 0.000 claims abstract description 51
- 238000000151 deposition Methods 0.000 claims description 73
- 239000003990 capacitor Substances 0.000 claims description 60
- 239000003792 electrolyte Substances 0.000 claims description 18
- 239000003921 oil Substances 0.000 claims description 8
- 238000001771 vacuum deposition Methods 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000010729 system oil Substances 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 abstract 4
- 238000005507 spraying Methods 0.000 abstract 4
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000007921 spray Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 61
- 238000011084 recovery Methods 0.000 description 15
- 230000002269 spontaneous effect Effects 0.000 description 15
- 239000002826 coolant Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/10—Metal-oxide dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/32—Wound capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The utility model provides a carry for condenser deposited film of high heat dissipating and light -weighted syllogic, in the deposit metal and by 21 groups overlap in opposite directions constitute the condenser for in the deposited film, at dielectric width direction side, utilize the metal deposit be formed with with the spraying plating metal touch portion of the spray metal coating circular telegram of condenser, at another side of dielectric width direction, be formed with not deposition of metal's edge part, the deposit has the metal between spraying plating metal touch portion and edge part, forms the operation region, the operation region includes: the 1st operation is regional, and it is located dielectric width direction one side, borders on spraying plating metal touch portion, the 2nd operation is regional, and it is located dielectric width direction opposite side, borders on the edge part, the deposition thickness that the regional deposition thickness of the 2nd operation constitutes more regionally than the 1st operation is thin, the deposition thickness of spraying plating metal touch portion is thicker than the deposition thickness in the 1st operation region, the deposition thickness in the 1st operation region is thicker than the deposition thickness in the 2nd operation region.
Description
Technical field
This utility model relates to a kind of thermal diffusivity that improves and deposits film with light-weighted syllogic capacitor。
Background technology
For non-pattern deposition film, generally deposition impedance is deposited and uses, but when there is WeakPoint in thin film dielectric, moment, PN intereelectrode short-circuit occurred, the metal of deposition by carbonization and disappears, and the function recovering to insulate and continue holding capacitor device function is called spontaneous recovery。The part of spontaneous recovery is very little, has the advantage that capacity reduces hardly, if but in WeakPoint not spontaneous recovery, then at PN interpolar, insulation power declines, and there is the pressure bad shortcoming of generation。Fig. 1 is the concept map that spontaneous recovery phenomenon is described。
If the non-spontaneous recovery of capacitor of non-pattern deposition film, then occur pressure bad, in order to solve to occur the problem of second time disaster, built-in following safety device。If thin film capacitor non-spontaneous recovery when there is spontaneous recovery phenomenon, then insulation power declines, at PN intereelectrode short-circuit, thin film melt, gas pressure occurring in inside, pressure fuse (safety device) disconnects, it is prevented that second time disaster。Although the method excellent performance, but need the space needed for built-in pressure fuse, there is the shortcoming that size increases, unit price rises。As Patents, there is publication 10-2011-0087853。
Utility model content
(solving the technical problem that)
For deposition film, if deposition impedance is low, then when spontaneous recovery phenomenon occurs WeakPoint, it is necessary to more multi-energy, big energy is when spontaneous recovery, and capacitor infringement is big, when there is repeatedly phenomenon, there is pressure bad shortcoming, if but deposition impedance is low, then there is the advantage that deposition metal is not oxidized。On the contrary, if deposition impedance is high, then self-healing property is outstanding, when WeakPoint spontaneous recovery, capacitor infringement is weak, there is the advantage that capacitor viability extends, but when setting high the deposition film of deposition impedance at place, when being externally exposed moisture or taking care of for a long time, deposition impedance is oxidized, there is the problem that capacitor durability is low。This utility model aims to provide a kind of syllogic capacitor deposition film, embodies with multisection type, have the outstanding property of spontaneous recovery as when impedance height (when thickness is thin) and impedance low time caloric value reduce and the advantage of oxidative phenomena reduction。
This utility model aims to provide a kind of thermal diffusivity that improves and deposits film with light-weighted syllogic capacitor, do not use patterned films, but while making self-healing property outstanding, the temperature that can reduce capacitor rises, it is possible to reduce be inversely proportional to self-healing property increase because of when deposition film is disposed the oxidized capacitor durability that causes of deposition impedance decline。
This utility model is placed in the following problem of solution the starting point and develops, namely, there is the shortcoming that equipment takes and size needs increase by 4～10% in conventional patterned films capacitor, if and conventional non-patterned films capacitor not spontaneous recovery, then occur pressure bad, in order to prevent second time disaster and embedded security device, thus equipment take rising and size increase problem。
(solving the means of problem)
A kind of improve thermal diffusivity and light-weighted syllogic capacitor deposition film, deposited metal and the capacitor that overlapped in opposite directions by 21 group deposits in film,
Width one side 1a at electrolyte 1, metal deposit is utilized to be formed with the metalling contact site 10 that the metalling with capacitor is energized, width another side 1b at described electrolyte 1, it is formed with the edge part 20 not depositing metal, between described metalling contact site 10 and edge part 20, deposition has metal, forms operation range (A)；
Described operation range (A) including: the 1st operation range 30, and it is positioned at the width side of electrolyte 1, adjacent described metalling contact site 10；
2nd operation range 40, it is positioned at the width opposite side of electrolyte 1, adjacent described edge part 20；
The deposit thickness t2 of described 2nd operation range 40 is configured thinner than the deposit thickness t1 of described 1st operation range 30；
The deposit thickness t0 of described metalling contact site 10 is thicker than the deposit thickness t1 of described 1st operation range 30；
The deposit thickness t1 of described 1st operation range 30 is thicker than the deposit thickness t2 of described 2nd operation range 40；
Formed make overburden film 100 the 1st operation range 30 and with described overburden film 100 be positioned at opposite to each other in the width direction bottom bottom deposition film 200 the 1st operation range 30 do not overlap, being formed with underlapped region B, the 2nd operation range 40 of bottom deposition film 200 is positioned at the bottom of the 1st operation range 30 end 30a of described overburden film 100。
(utility model effect)
According to this utility model, one is provided to improve thermal diffusivity and light-weighted syllogic capacitor deposition film, realize deposition film with multisection type, optionally have the self-healing property outstanding as when impedance height (when thickness is thin) and impedance low time caloric value reduce and advantage that oxidative phenomena reduces。
According to this utility model, one is provided to improve thermal diffusivity and light-weighted syllogic capacitor deposition film, do not use patterned films, and be by mean of the 2nd operation range 40 of relatively thin structure and make self-healing property outstanding, simultaneously, the temperature that can reduce capacitor by means of the 1st relatively thick operation range 30 as impedance rises, it is possible to reduce be inversely proportional to self-healing property increase because of when deposition film is disposed the oxidized capacitor durability that causes in deposition portion decline。
According to this utility model, one is provided to improve thermal diffusivity and light-weighted syllogic capacitor deposition film, solve following problem, namely, there is equipment expense in conventional patterned films capacitor and size needs the shortcoming of increase by 4～10%, and if conventional non-patterned films capacitor not spontaneous recovery, then occur pressure bad, in order to prevent second time disaster and embedded security device, thus equipment take rising and size increase problem。
This technology is applied to the inverter thin film capacitors such as hybrid vehicle, electric automobile, hydrogen cell automobile, plug-in type electric automobile but it also may be applied as general industry technology。Conventional art when improving metal deposit impedance in order to increase self-healing property, when being externally exposed moisture or taking care of for a long time, metal deposit impedance is oxidized, there is the problem that resistance value rises, and for this technology, when metal deposit, deposition metal is fully bonded in plastic sheeting, improves in the past oxidized under moisture and when taking care of for a long time phenomenon。For conventional art, raising along with metal deposit impedance, when being externally exposed moisture or taking care of for a long time, if metal deposit impedance is oxidized, then have problems, and after vacuum moulding machine, if at the part dope of deposition metal coated, then improve the phenomenon that the metal carrying out metal deposit on the plastic film is oxidized under moisture and when taking care of for a long time。Particularly when when Zn deposits use, then make metal deposit impedance oxidation be substantially reduced remarkably productive。It addition, can at the part dope equably of deposition metal deposit, dope on the metal film of deposition, thus make the reaction with moisture realize minimizing, improve the problem that deposition metal is oxidized。
Accompanying drawing explanation
Fig. 1 is spontaneous recovery phenomenon conceptual illustration figure。
(a b) is those that have previously been the deposition film pie graph of technology to Fig. 2。
Fig. 3 (a) is the profile of the syllogic capacitor deposition film perfect condition of this utility model embodiment。
Fig. 3 (b) is the profile of the syllogic capacitor deposition film practical production status of this utility model embodiment。
The syllogic capacitor deposition film roll that Fig. 4 is this utility model embodiment takes axonometric chart。
The patterned films profile that Fig. 5 is those that have previously been。
Fig. 6 is capacitor life-span table。
Symbol description
1: electrolyte 1a: side
1b: another side 10: metalling contact site
20: edge part 30: the 1 operation range
30a: end 40: the 2 operation range
100: overburden film 200: bottom deposition film
A: operation range B: underlapped region
T: deposit thickness W: all width
Detailed description of the invention
With reference to the accompanying drawings, the multisection type capacitor of one embodiment of this utility model is deposited film and capacitor is described in detail。Fig. 1 is spontaneous recovery phenomenon conceptual illustration figure, Fig. 2 (a, b) the deposition film pie graph of technology it is those that have previously been, Fig. 3 (a) is the profile of the syllogic capacitor deposition film perfect condition of this utility model embodiment, owing to existing vacuum coating technique is unable to reach border absolute cleanliness, therefore, Fig. 3 (b) is the profile of the syllogic capacitor deposition film practical production status of this utility model embodiment, the syllogic capacitor deposition film roll that Fig. 4 is this utility model embodiment takes axonometric chart, the patterned films profile that Fig. 5 is those that have previously been, Fig. 6 is capacitor life-span table。
As shown in Figure 3, Figure 4, deposited metal and overlapped in opposite directions by 21 group capacitor deposition film in, syllogic capacitor of the present utility model deposition film, width one side 1a at electrolyte 1, metal deposit is utilized to be formed with the metalling contact site 10 that the metalling with capacitor is energized, width another side 1b at described electrolyte 1, it is formed with the edge part 20 not depositing metal, between described metalling contact site 10 and edge part 20, deposition has metal, forms operation range (A)；Described operation range (A) including: the 1st operation range 30, and it is positioned at the width side of electrolyte 1, adjacent described metalling contact site 10；2nd operation range 40, it is positioned at the width opposite side of electrolyte 1, adjacent described edge part 20。
Additionally, as shown in Figure 3, Figure 4, the deposit thickness (t2) of the 2nd operation range 40 is configured thinner than the deposit thickness (t1) of described 1st operation range 30, and the deposit thickness of metalling contact site 10 (t0) is thicker than the deposit thickness (t1) of described 1st operation range 30, the deposit thickness (t1) of the 1st operation range 30 is thicker than the deposit thickness (t2) of described 2nd operation range 40。
Additionally, as shown in Figure 3, Figure 4, formed make overburden film 100 the 1st operation range 30 and with described overburden film 100 be positioned at opposite to each other in the width direction bottom bottom deposition film 200 the 1st operation range 30 do not overlap, being formed with underlapped region B, the 2nd operation range 40 of bottom deposition film 200 is positioned at the bottom of the 1st operation range 30 end 30a of described overburden film 100。
As shown in Figure 3, Figure 4, multisection type capacitor in this utility model embodiment is used in deposition film, the deposit thickness (t0) of preferred metalling contact site 10 is bigger than the deposit thickness (t1) of described 1st operation range 30, the deposit thickness (t1) of the 1st operation range 30 is bigger than the deposit thickness (t2) of described 2nd operation range 40, and the deposition impedance of metalling contact site 10 is 3 ± 2 Ω/cm2, and the deposition impedance of the 1st operation range 30 is 15 ± 10 Ω/cm2, the deposition impedance of the 2nd operation range 40 is 60 ± 50 Ω/cm2。A kind of capacitor performance identical with conventional art of playing in the resistance region of described per unit area can be provided, and heat generation reduction, self-healing feature are outstanding, can the metal deposit dielectric film of actual volume production。
Such as Fig. 3, shown in Fig. 4, syllogic capacitor in this utility model embodiment is used in deposition film, formed make overburden film 100 the 1st operation range 30 and with described overburden film 100 be positioned at opposite to each other in the width direction bottom bottom deposition film 200 the 1st operation range 30 do not overlap, it is formed with underlapped region B, 2nd operation range 40 of bottom deposition film 200 is positioned at the bottom of the 1st operation range 30 end 30a of described overburden film 100, the width W3 of preferred metalling contact site 10 is 3～8mm, 0.2～0.49 times (or more than 0.2～less than 0.5 times) of all width (W) that " the width W1 of width W3+ the 1st operation range 30 of metalling contact site 10 " is described electrolyte 1。From result of the test it can be seen that when the width W1 of the 1st operation range 30 is excessive, self-healing property declines, when the width W2 of the 2nd operation range 40 is excessive, there is the problem that heating and oxidation increase, thus above-mentioned scope is suitable for。
When consider edge part and end underlapped have dielectric film part time, at least need more than 3mm, when more than 8mm, metalling contact site is excessive, exceedes needs。When ratio is 0.2～0.5 times, the width W3 of metalling contact site 10 is 3～8mm, when electrolyte overall width is 50mm, it can be ensured that the width 2～30mm of underlapped region B。0.3～0.5 times of all width (W) that " the width W1 of width W3+ the 1st operation range 30 of metalling contact site 10 " is described electrolyte 1, when electrolyte entirety width is about 50mm, it is ensured that the underlapped region of 2～30mm。If underlapped region be sized to below 2mm, when then not occurring clear and definite edge to distinguish when metal vacuum deposition, the part overlapped during production, can there is to reach the region (region that namely self-healing feature declines) of the purpose that this utility model is pursued, if underlapped region is wide, then there is the problem that the 2nd operation range 40 is excessive。
Multisection type capacitor in one embodiment of this utility model is used in deposition film, the phenomenon oxidized under moisture and when taking care of for a long time in order to improve the metal being deposited on dielectric film, after metal vacuum deposition, can at the part dope of deposition metal coated, oil is chosen from the one in silicon system or fluorine system oil, during deposition, when inside depositor oil heating temperatures to 90～170 DEG C time, it is spread evenly across deposition part, it is prevented that oxidation effectiveness is good。That is, oxidized under moisture and when taking care of for a long time in order to improve the metal being deposited on dielectric film phenomenon, it is preferable that after metal vacuum deposition, the part in deposition metal coated goes back dope。Preferred oil is chosen from the one in silicon system or fluorine system oil, in vacuum moulding machine device, oil temperature is heated to 90～170 DEG C, and metal deposit portion coated by the oil of evaporation, or metal deposit portion and edge part。
Below the result of the test of this utility model and comparative example is illustrated。Capacitor temperature rising formula can calculate as follows。
△ T (DEG C)=I^2 × ESR (ESR=connects equivalent impedance for △ T=temperature rising part, I=pulse current)。
Condenser capacity depends on equation below。C=(ε XS)/d (C=condenser capacity, ε=dielectric constant, S=PN pole area in opposite directions, d=dielectric thickness)。
Conventional art and enforcement leading case of the present utility model, be applied to capacitor, is built in hybrid vehicle, electric automobile inverter, it is thus achieved that following result of the test。Capacitor is that busbar is configured at below capacitor unit, fitly overlapping PN pole busbar, built-in insulation body between overlap, makes low inductance and cooling effectiveness maximize。For water-cooled or air-cooled type, it is possible to be made to make coolant or cold air flow through capacitor bottom surface (i.e. inverter shell radiator)。Absorb heat from element internal it addition, the opposite of capacitor bottom surface can be adhered to and diffuse to the structure heat sink of outside。This result of the test shows so that coolant direct turn-overs effect is fitst water。
Table 1 shows with experimental condition: busbar voltage=650Vdc, pulsating current=16KHz, pulse current=80Arms, environment temperature=85 DEG C, natural cooling mode carry out the result of the test tested。Dielectric deposition film is different, and different piece is system as shown in Figure 5。Temperature measuring point is unit bottom, P pole busbar, N pole busbar, unit top, it is illustrated that temperature with HotSpot (maximum temperature point) for benchmark。
[table 1]
◎ (very good) > zero (well) > △ (generally) > × (bad)
[table 2]
◎ (very good) > zero (well) > △ (generally) > × (bad)
Not circulating (※ benchmark) relative to comparative example coolant, embodiment has the reduction effect of 3.2 DEG C when coolant does not circulate (※ C), and embodiment has the reduction effect of 9.9 DEG C when coolant circulates (※ D)。
Life Table according to Fig. 6, when without original direct refrigerating function, it is assumed that reach 95 from about 91.4, when capacitor uses under 650V, bimetry about 9,000 hours, during coolant cooling capacitor bottom surface, assuming that capacitor temperature rises reaches 85 from 78.3, when capacitor uses under 650V, it was predicted that the life-span is about 32,000 hours, can life-saving about 23,000 hours。
The preferred embodiment that this utility model just mentions above is illustrated, but scope of the present utility model is not limited to this embodiment, scope of the present utility model is determined according to claims, including the multiple amendment belonged to this utility model equivalency range and deformation。
It is pointed out that the reference numeral recorded in claims is provided purely for the understanding of auxiliary utility model, the explanation of interest field do not produced impact, must not reference numeral historically and narrow explanation interest field。
Claims (5)
1. improve a thermal diffusivity and light-weighted syllogic capacitor deposition film, deposited metal and the capacitor that overlapped in opposite directions by 21 group deposits in film, it is characterised in that
Width one side (1a) at electrolyte (1), metal deposit is utilized to be formed with the metalling contact site (10) that the metalling with capacitor is energized, another side of width (1b) at described electrolyte (1), it is formed with the edge part (20) not depositing metal, between described metalling contact site (10) and edge part (20), deposition has metal, forms operation range (A)；
Described operation range (A) including: the 1st operation range (30), and it is positioned at the width side of electrolyte (1), adjacent described metalling contact site (10)；
2nd operation range (40), it is positioned at the width opposite side of electrolyte (1), adjacent described edge part (20)；
The deposit thickness (t0) of described metalling contact site (10) is thicker than the deposit thickness (t1) of described 1st operation range (30)；
The deposit thickness (t1) of described 1st operation range (30) is thicker than the deposit thickness (t2) of described 2nd operation range (40)；
Formed make overburden film (100) the 1st operation range (30) and with described overburden film (100) be positioned at opposite to each other in the width direction bottom bottom deposition film (200) the 1st operation range (30) do not overlap, being formed with underlapped region (B), the 2nd operation range (40) of bottom deposition film (200) is positioned at the bottom of the 1st operation range (30) end (30a) of described overburden film (100)。
2. raising thermal diffusivity according to claim 1 and light-weighted syllogic capacitor deposition film, it is characterised in that
The deposition impedance of described metalling contact site (10) is 3 ± 2 Ω/cm2,
And the 1st the deposition impedance of operation range (30) be 15 ± 10 Ω/cm2,
The deposition impedance of described 2nd operation range (40) is 60 ± 50 Ω/cm2,
The width (W1) of the width (W3) the+the 1 operation range (30) of metalling contact site (10), for 0.2～0.49 times of all width (W) of described electrolyte (1)。
3. raising thermal diffusivity according to claim 2 and light-weighted syllogic capacitor deposition film, it is characterised in that
The width of described underlapped region (B) is 2～30mm。
4. raising thermal diffusivity according to claim 3 and light-weighted syllogic capacitor deposition film, it is characterised in that
The phenomenon oxidized under moisture and when taking care of for a long time in order to improve the metal being deposited on dielectric film,
After metal vacuum deposition, the part in deposition metal coated goes back dope。
5. raising thermal diffusivity according to claim 4 and light-weighted syllogic capacitor deposition film, it is characterised in that
Described oil is chosen from the one in silicon system or fluorine system oil,
In vacuum moulding machine device, oil temperature being heated to 90～170 DEG C, metal deposit portion coated by the oil of evaporation, or metal deposit portion and edge part。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140150836A KR101573247B1 (en) | 2014-11-03 | 2014-11-03 | Vacuum Metallizing Coating Film |
| KR10-2014-0150836 | 2014-11-03 |
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| Publication Number | Publication Date |
|---|---|
| CN205335083U true CN205335083U (en) | 2016-06-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510621943.0A Pending CN105118669A (en) | 2014-11-03 | 2015-09-25 | Three-step type deposited film for capacitor for improving heat dissipation and lightweight |
| CN201520752792.8U Active CN205335083U (en) | 2014-11-03 | 2015-09-25 | Carry for condenser deposited film of high heat dissipating and light -weighted syllogic |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510621943.0A Pending CN105118669A (en) | 2014-11-03 | 2015-09-25 | Three-step type deposited film for capacitor for improving heat dissipation and lightweight |
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| Country | Link |
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| KR (1) | KR101573247B1 (en) |
| CN (2) | CN105118669A (en) |
| WO (1) | WO2016072671A1 (en) |
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| WO2019150839A1 (en) * | 2018-02-05 | 2019-08-08 | 株式会社指月電機製作所 | Film capacitor |
| JP7193070B2 (en) * | 2018-02-05 | 2022-12-20 | 株式会社指月電機製作所 | Film capacitor |
| KR102063782B1 (en) * | 2018-07-27 | 2020-01-08 | 삼화콘덴서공업 주식회사 | Film capacitor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1153393A (en) * | 1995-10-06 | 1997-07-02 | 松下电器产业株式会社 | Capacitor |
| JP4011797B2 (en) * | 1999-07-30 | 2007-11-21 | 松下電器産業株式会社 | Method and apparatus for producing stepped vapor deposition film |
| JP2009000957A (en) * | 2007-06-25 | 2009-01-08 | Toray Ind Inc | Metal vapor deposition film for capacitor and metallized film capacitor using the same |
| JP2009277830A (en) * | 2008-05-14 | 2009-11-26 | Panasonic Corp | Metallized film capacitor |
| JP2012009764A (en) * | 2010-06-28 | 2012-01-12 | Daikin Ind Ltd | Film capacitor |
| CN202025647U (en) * | 2011-04-07 | 2011-11-02 | 安徽湖滨电子科技有限公司 | Oil type oxidation barrier film structure for metalized capacitors |
| KR101369862B1 (en) * | 2012-04-10 | 2014-03-06 | 삼화콘덴서공업주식회사 | Capacitor |
| CN103578754A (en) * | 2013-10-15 | 2014-02-12 | 铜陵其利电子材料有限公司 | Aluminum zinc metallized film with gradually-changing sheet resistance and for capacitor |
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2014
- 2014-11-03 KR KR1020140150836A patent/KR101573247B1/en active IP Right Grant
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2015
- 2015-09-25 CN CN201510621943.0A patent/CN105118669A/en active Pending
- 2015-09-25 CN CN201520752792.8U patent/CN205335083U/en active Active
- 2015-11-02 WO PCT/KR2015/011624 patent/WO2016072671A1/en active Application Filing
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| Publication number | Publication date |
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| WO2016072671A1 (en) | 2016-05-12 |
| KR101573247B1 (en) | 2015-12-02 |
| CN105118669A (en) | 2015-12-02 |
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