WO2016055243A1 - Multiplexeur d'antenne, circuit d'attaque pourvu d'un élément de commutation et dispositif d'émission actif pourvu d'un élément de commutation - Google Patents

Multiplexeur d'antenne, circuit d'attaque pourvu d'un élément de commutation et dispositif d'émission actif pourvu d'un élément de commutation Download PDF

Info

Publication number
WO2016055243A1
WO2016055243A1 PCT/EP2015/071068 EP2015071068W WO2016055243A1 WO 2016055243 A1 WO2016055243 A1 WO 2016055243A1 EP 2015071068 W EP2015071068 W EP 2015071068W WO 2016055243 A1 WO2016055243 A1 WO 2016055243A1
Authority
WO
WIPO (PCT)
Prior art keywords
transistor
voltage
control
terminal
switching element
Prior art date
Application number
PCT/EP2015/071068
Other languages
German (de)
English (en)
Inventor
Dieter Sass
Original Assignee
Continental Automotive Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Continental Automotive Gmbh filed Critical Continental Automotive Gmbh
Publication of WO2016055243A1 publication Critical patent/WO2016055243A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • H01Q7/06—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop with core of ferromagnetic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/28—Combinations of substantially independent non-interacting antenna units or systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/27—Adaptation for use in or on movable bodies
    • H01Q1/32—Adaptation for use in or on road or rail vehicles
    • H01Q1/3208—Adaptation for use in or on road or rail vehicles characterised by the application wherein the antenna is used

Definitions

  • the invention relates to a multiplexer with a switching element, in particular with a switching element with Feldef ⁇ maschinetransistoren, a driver circuit with a switching element and an active transmitting device with a switching element, in particular in a keyless vehicle access and start system.
  • a base station in the vehicle transmits, via at least one antenna located on the vehicle, a request signal coded by means of a first coding table on an LF frequency (LF stands for “low frequency” with frequencies between, for example, 20 kHz and 200 kHz).
  • LF low frequency
  • the base station then switches to a receive mode in the UHF range (UHF stands for “Ultra High Frequency” with frequencies in the three-digit MHz range, for example) and waits for confirmation.
  • a transponder-equipped key If a transponder-equipped key is in range, it receives the LF signal, decodes it, and retransmits it using a second encoding table with a new encoding as the UHF signal.
  • the UHF signal is decoded by the Ba ⁇ sisstation. Since the base station knows both coding tables, it can compare its own original transmission with the signal just received and grant access if it matches. Is there no within a defined time correct answer, nothing happens and the base station switches back to standby.
  • the engine start process essentially corresponds to that of the access control, except that here the engine start button is actuated.
  • an antenna for transmitting the LF signal is predominantly an inductive antenna use, which is designed for example as a winding provided with a ferrite core (also known as magnetic or ferrite antenna).
  • the inductance of the inductive antenna is often operated together with a Kon ⁇ capacitor in a resonant circuit.
  • a base station can also have more than one antenna (and thus also several oscillating circuits), for example to cover several areas around the vehicle.
  • the various antennas can, as described in the publication DE 198 35 155 AI, are individually controlled by means of separate drivers. However, since such a solution requires a considerable amount of circuitry, base stations are known with only one driver for multiple antennas, the individual antennas can be controlled via a multiplexer.
  • a transmitting device in which a multiplexer is arranged on the side of the antenna facing away from the driver.
  • a multiplexer between the driver and the antennas, as described for example in EP 0 741 221 B1.
  • the multiplexer used may be implemented in a MOSFET technology, that is, that the multiplexer MOSFETs having which can be turned on via a control signal at its gate terminal and activate or deactivate a respective associated antenna in accordance with STEU ⁇ ersignal.
  • One problem is that the resistance of the transistors used changes with a change in temperature. This has a negative effect on the quality of the respective antenna resonant circuit and on the strength of the radiated from the respective antenna electromagnetic field.
  • the object of the invention is to provide an improved switching element of an antenna multiplexer in this respect. Furthermore, an improved driver circuit with a switching element and an improved active transmitting device with a switching element are to be provided.
  • the object is achieved by an antenna multiplexer according to claim 1, a driver circuit according to claim 10, or an active transmission device according to claim 11.
  • the antenna multiplexer according to the invention has a switching element with a first transistor and a second transistor, each having a first load terminal, a second load terminal and a control terminal, wherein the first load terminal of the first transistor with the first Load terminal of the second transistor is connected and the first transistor receives at its second load terminal, a first voltage.
  • the switching element further has a potential generating unit, which is designed to provide a potential at an output connection in an activated state, and a control unit, which is designed to receive the potential generated by the potential generation unit, a control voltage at the first transistor and on the second
  • Transistor to provide and change the control voltage in response to a temperature in the switching element, wherein the control voltage is always greater than a voltage which is the sum of the first voltage and a threshold voltage of the first transistor, minus a voltage at the control terminal of the first transistor corresponds.
  • the control unit may be configured to increase the tax ⁇ voltage when the temperature increases in the switching element and to decrease when the temperature in
  • the control unit can have at least one diode which has a greater diffusion voltage at lower temperatures than at higher temperatures. This means that the control unit can be implemented easily without great circuit complexity.
  • the first transistor and the second transistor may be formed as a MOSFET, in particular as n-channel MOSFETs, wherein in each case the first load terminal is a source terminal, the second
  • Load terminal is a drain terminal and the control terminal is a gate terminal and the control voltage is a gate voltage.
  • the temperature in the switching element may be a temperature in the first or second transistor or in both transistors.
  • the potential generation unit may have a charge pump or a bootstrap circuit to a sufficiently high
  • the potential generation unit may be configured to receive a control signal and provide a potential when the control signal is present or has a predetermined level. A control voltage which enables the transistors to be turned on and thereby the activation of a subsequent antenna is thus provided only if this is actually desired.
  • the first voltage may be a trapezoidal, a rectangular or a sinusoidal voltage.
  • a driver circuit for an inductor comprises a dri ⁇ berform which is adapted to provide a first voltage.
  • the driver circuit furthermore has a multiplexer (in particular an antenna multiplexer as described above) with at least two switching elements, the switching elements each having a first transistor and a second transistor, each having a first load terminal, a second load terminal and a control terminal wherein the first load terminal of the first transistor is connected to the first load terminal of the second transistor and the first transistor receives the first voltage on its second load terminal.
  • the switching elements further each have a potential generating unit, which is designed to provide a potential at an output terminal in an activated state, and a control unit, which is configured to receive the potential generated by the potential generating unit, a control voltage at the first transistor and at second
  • Transistor and to vary the control voltage in response to a temperature in the switching element, wherein the control voltage is always greater than a voltage which is the sum of the first voltage and a threshold voltage of the first transistor, minus a voltage at the control terminal of the first transistor corresponds.
  • An active transmitting device has at least two inductive antennas, a driver stage, which is designed to provide a first voltage, and a multiplexer with at least two switching elements, wherein the switching elements each have a first transistor and a second transistor, each having a first load terminal, a second load terminal and a control terminal, wherein the first Lastan ⁇ circuit of the first transistor is connected to the first load terminal of the second transistor and the first transistor receives the first voltage at its second load terminal.
  • the switching elements further respectively have a potential generating unit that is adapted in an activated state at an output terminal, a potential setnitrozu ⁇ , and a control unit which is adapted to receive the potential generated by the potential generation unit, a control voltage at the the first transistor and the second transistor and to change the control voltage in dependence on a temperature in the switching element, wherein the control voltage is always greater than a voltage which is the sum of the first voltage and a threshold voltage of the first transistor, minus a voltage at the control terminal of first transistor corresponds.
  • Figure 1 is a circuit diagram of a driver circuit for a
  • FIG. 2 shows a circuit diagram of a switching element with a first circuit for temperature compensation
  • Figure 3 is a circuit diagram of a switching element with a
  • FIG. 1 shows a driver circuit for a plurality of inductors, which in the present case are provided by inductive antennas 11, 12, 13, which may be, for example, ferrite antennas (wound ferrite cores) in an application as an active transmitting device.
  • the driver circuit and the inductive antennas may be part of a keyless vehicle access and start system.
  • the inductive antennas 11, 12, 13 may alternatively be described as shown in FIG. 1 by an electrical series connection of a purely inductive component 21, 22, 23 and an ohmic component 31, 32, 33.
  • a capacitor 41, 42, 43 is in each case between the inductive antenna 11, 12, 13 and a connection for a reference potential M ge ⁇ switches.
  • An ohmic resistor 51, 52, 53 is connected in each case between the inductive antennas 11, 12, 13 and a multiplexer 60.
  • the multiplexer 60 has a number of switching elements 71, 72, 73, wherein the number of switching elements 71, 72, 73 corresponds to the number of inductive antennas 11, 12, 13.
  • Each of the switching elements 71, 72, 73 is assigned to an inductive antenna 11, 12, 13 and is designed to activate the respective antenna 11, 12, 13 (switching element 71, 72, 73 closed) or to deactivate it (switching element 71, FIG.
  • each of the switching elements 71, 72, 73 receives a control signal S21, S22, S23.
  • a switching element 71, 72, 73 for example be closed when the corresponding control signal S21, S22, S23 is applied or has a certain level.
  • An operating voltage Ur of the multiplexer 60 may be replaced by a
  • Vehicle battery (e.g., directly, or indirectly via a voltage regulator).
  • the operating voltage Ur can furthermore be provided (directly or indirectly via a voltage regulator) to a driver stage 80.
  • the driver stage 80 may comprise an amplifier to which a control signal S10 is provided at an input.
  • the effective amplification factor of the driver stage 80 depends on the magnitude of the operating voltage Ur.
  • the input side of the control signal S10 driven driver stage 80 generates the operation of the driver circuit on the output side, a voltage Ul, which is used to control the antennas 11, 12, 13, when the corresponding switching element 71, 72, 73 is closed.
  • the voltage Ul can be, for example, trapezoidal, sinusoidal or rectangular.
  • a switching element 71, 72, 73 (of the multiplexer 60) may comprise two transistors, which may be formed as MOSFETs. This is illustrated in FIG.
  • the switching element 71 has a first MOSFET 711 and a second MOSFET 712.
  • the MOSFETs shown in FIG. 2 are n-channel MOSFETs.
  • MOSFET stands for metal-oxide
  • a MOSFET Semiconductor Field-Effect Transistor (German: metal-oxide-semiconductor field effect transistor).
  • a MOSFET is a three-terminal active device. These are a control terminal (gate terminal) G, a first load terminal (source terminal) S and a second load terminal (drain terminal) D.
  • a MOSFET acts like a voltage-controlled resistor, that is, via a control voltage (gate voltage ) Ugs a resistor between drain terminal D and source terminal S, and thus a current through the transistor can be changed. This wi- "
  • Resistance is temperature-dependent. In the case of small resistors, only a slight increase in resistance results in an increase in the temperature. For large resistors, however, a temperature increase has a noticeable effect on the resistance. In a temperature range of -40 ° to + 105 ° C, the resistance can vary by a factor of 3. This has a negative effect on the quality of the subsequent resonant circuit.
  • the two MOSFETs 711, 712 are connected to one another with their source terminals S. With its drain terminal D, the first MOSFET 711 is connected to the driver stage 80 (not shown in FIG. 2).
  • the second MOSFET 712 is connected with its drain terminal D to the resonant circuit (not shown in Figure 2).
  • the MOSFETs 711, 712 each have a parasitic diode between their drain and source terminals D, S. These diodes are switched antiseries in the present arrangement and thus prevent a conductive connection in the deactivated state.
  • a gate voltage Ugs is required which is greater by a threshold voltage Uth of the first MOSFET 711 than the voltage Ul generated by the driver stage 80 minus a voltage Ug of the first MOSFET 711 (Ugs> (U1 + Uth-Ug), where the voltage Ug is a voltage at the gate terminal G of the first MOSFET 711 relative to a ground potential
  • the threshold voltage Uth of a MOSFET (often also referred to as the threshold voltage) lies within
  • the gate voltage Ugs is smaller than a voltage that is the sum of the voltage Ul generated by the driver stage 80 and the threshold voltage Uth of the first MOSFET 711 minus the voltage Ug of the first MOSFETs 711, 712 can not conduct, for generating a sufficiently high gate voltage Ugs, a potential generation unit 713 and a control unit 714 are provided, and the potential generation unit 713 is provided with MOSFETs (that
  • the potential generation unit 713 may include a charge pump or a bootstrap circuit.
  • the control unit 714 receives at an input the potential provided by the potential generation unit 713.
  • the control unit 714 is further connected to the terminal for the reference potential M. With a first output, the control unit 714 is connected to the gate terminals G of the MOSFETs 711, 712. With a second output, the control unit 714 is connected to a common circuit node of the source terminals S.
  • Control unit 714 can thus provide a Ga ⁇ te voltage Ugs for the MOSFETs 711, 712 at their outputs.
  • the control unit 714 is designed to adapt the gate voltage Ugs to a temperature in the switching element 71.
  • the gate voltage Ugs can be smaller at lower temperatures than at higher temperatures. At lower temperatures, the resistance between drain D and source S can thus be increased, while the MOSFETs have their optimally achievable resistance at higher temperatures.
  • the temperature in the switching element 71 may be the temperature in the transistors 711, 712.
  • the control unit 714 may have at least one diode 715 for changing the gate voltage Ugs, as shown in FIG.
  • the at least one diode 715 has at nied ⁇ complicated temperatures greater diffusion voltage than at high temperatures, so that the supplied Ga ⁇ te-voltage Vgs varies with the temperature.
  • the diffus ⁇ onsbond is a potential difference across a space charge zone, which counteracts the diffusion of charge carriers.
  • a semiconductor diode has a pn junction. At the boundary between the n-doped and the p-doped semiconductor, the diffusion gradient leads to the diffusion of charge carriers. That is, free electrons from the n-region migrate to the p-region. Analogously, holes (defect ⁇ electrons) from the p region into the n-region. Among other things, it comes to the recombination of electrons and holes. As a result of this charge carrier movement (diffusion current), an electric counter field forms between these space charges in the interior of the semiconductor crystal, which counteracts the further diffusion of mobile charge carriers, since it generates an opposite drift current. The by the electric
  • Electric field generated opposite field is referred to as diffusion ⁇ voltage.
  • the use of at least one diode 715 is just one example. It is also possible to adapt the gate voltage Ugs in another way to a temperature in the switching element 71.

Landscapes

  • Electronic Switches (AREA)

Abstract

L'invention concerne un élément de commutation (71) qui comprend un premier et un second transistor (711, 712) ; une première borne de charge (S) du premier transistor (711) est reliée à une première borne de charge (S) du second transistor (712) et le premier transistor (711) reçoit une première tension (U1) au niveau d'une seconde borne de charge (D). L'élément de commutation comporte une unité de génération de potentiel (713), qui est adaptée pour produire dans un état activé un potentiel au niveau d'une borne de sortie, et une unité de commande (714) qui est adaptée pour recevoir le potentiel généré par l'unité de génération de potentiel (713), produire une tension de commande (Ugs) au niveau du premier transistor (711) et au niveau du second transistor (714) et faire varier la tension de commande (Ugs) en fonction de la température dans l'élément de commutation (71). La tension de commande (Ugs) est toujours supérieure à une tension qui correspond à la somme de la première tension (U1) et d'une tension de seuil (Uth) du premier transistor (711), moins une tension (Ug) au niveau de la borne de commande (G) du premier transistor (711).
PCT/EP2015/071068 2014-10-07 2015-09-15 Multiplexeur d'antenne, circuit d'attaque pourvu d'un élément de commutation et dispositif d'émission actif pourvu d'un élément de commutation WO2016055243A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014220260.4A DE102014220260A1 (de) 2014-10-07 2014-10-07 Antennen-Multiplexer, Treiberschaltung mit einem Schaltelement und aktive Sendeeinrichtung mit einem Schaltelement
DE102014220260.4 2014-10-07

Publications (1)

Publication Number Publication Date
WO2016055243A1 true WO2016055243A1 (fr) 2016-04-14

Family

ID=54147179

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2015/071068 WO2016055243A1 (fr) 2014-10-07 2015-09-15 Multiplexeur d'antenne, circuit d'attaque pourvu d'un élément de commutation et dispositif d'émission actif pourvu d'un élément de commutation

Country Status (2)

Country Link
DE (1) DE102014220260A1 (fr)
WO (1) WO2016055243A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016112007A1 (de) * 2016-06-30 2018-01-04 Rittal Gmbh & Co. Kg Schließanordnung, insbesondere Türschlossanordnung für einen Schaltschrank und ein entsprechendes Verfahren
EP3382357B1 (fr) * 2017-03-31 2021-03-24 Mitsubishi Electric R & D Centre Europe B.V. Dispositif et procédé pour commander la température d'un module de puissance à puces multiples

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004266970A (ja) * 2003-03-04 2004-09-24 Eta Electric Industry Co Ltd 整流切換回路
US20070127182A1 (en) * 2005-12-07 2007-06-07 Alpha & Omega Semiconductor, Ltd. Current limited bilateral MOSFET switch with reduced switch resistance and lower manufacturing cost
US20130027283A1 (en) * 2011-07-29 2013-01-31 Stmicroelectronics S.R.L Charge-sharing path control device for a scan driver of an lcd panel

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5710548A (en) 1995-05-03 1998-01-20 Ford Motor Company Transmitter direction identifier
DE19835155A1 (de) 1998-08-04 2000-02-24 Bosch Gmbh Robert Vorrichtung und Verfahren für eine Berechtigungsabfrage in einem Kraftfahrzeug
DE19915795C2 (de) * 1999-04-08 2003-04-17 Hella Kg Hueck & Co Vorschaltgerät für eine Hochdruckgasentladungslampe in einem Kraftfahrzeug
DE102004011927A1 (de) 2003-04-25 2004-12-09 Conti Temic Microelectronic Gmbh Sendevorrichtung eines Zugangssystems mit einer Anzahl von Langwellenantennen
DE202009005420U1 (de) * 2009-03-11 2009-06-18 Ellenberger & Poensgen Gmbh Elektronischer Schutzschalter

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004266970A (ja) * 2003-03-04 2004-09-24 Eta Electric Industry Co Ltd 整流切換回路
US20070127182A1 (en) * 2005-12-07 2007-06-07 Alpha & Omega Semiconductor, Ltd. Current limited bilateral MOSFET switch with reduced switch resistance and lower manufacturing cost
US20130027283A1 (en) * 2011-07-29 2013-01-31 Stmicroelectronics S.R.L Charge-sharing path control device for a scan driver of an lcd panel

Also Published As

Publication number Publication date
DE102014220260A1 (de) 2016-04-07

Similar Documents

Publication Publication Date Title
DE102014220406B4 (de) Treiberschaltung für eine Induktivität und aktive Sendeeinrichtung mit einer Treiberschaltung
DE112018003130T5 (de) Zeitsteuerung für Totzeitsteuerung
DE102014222603B3 (de) Treiberschaltung für eine Induktivität und aktive Sendeeinrichtung mit einer Treiberschaltung
EP1817838B1 (fr) Dispositif et procede pour charger un dispositif de stockage d'energie electrique
EP2765694B1 (fr) Convertisseur continu/continu et procédé de fonctionnement
DE102016103130B4 (de) Schaltungsanordnung mit einer Gleichrichterschaltung und Verfahren
DE69306185T2 (de) Stand-By-Speiseschaltung
DE112013007719T5 (de) Automatikabgleichschaltung für Hochfrequenzstromversorgung
DE102015101975A1 (de) Als elektronischer Schalter betreibbare elektronische Schaltung
DE102014208880B4 (de) Treiberschaltung für eine Induktivität und aktive Sendeeinrichtung mit einer Treiberschaltung
WO2016055243A1 (fr) Multiplexeur d'antenne, circuit d'attaque pourvu d'un élément de commutation et dispositif d'émission actif pourvu d'un élément de commutation
DE102006046288B3 (de) Verstärkereinrichtung mit einstellbarer Versorgungsspannung
EP1821405B1 (fr) Procédé destiné à limiter la tension dans un transpondeur
EP0652639A2 (fr) Circuit d'attaque
DE102011075175A1 (de) Signalübertragungsanordnung mit einem Transformator
WO1997030481A1 (fr) Circuit integre pour la commande d'un transistor de puissance a effet de champ mos avec charge cote source
DE3338627C2 (fr)
DE102010063112A1 (de) Vorrichtung zum induktiven Heizen eines Kraftstoffeinspritzventils
DE102016108231A1 (de) Schalter
EP3175533A1 (fr) Dispositif à valeur de capacité ajustable permettant d'accorder un système oscillant, système oscillant et système de transmission d'énergie
DE19655181C2 (de) Spannungsseitiger Schalterkreis
DE102016222408A1 (de) Energieversorgungsvorrichtung und Verfahren zum Bereitstellen einer Ausgangsspannung
DE102013102052B4 (de) Chip-Anordnung
EP3662579B1 (fr) Dispositif et procédé de distribution homogène de courant et/ou de réduction de pertes de commutation d'éléments de commutation commandables électriquement
EP0008765A1 (fr) Dispositif pour supprimer les courants à haute fréquence dans les paliers d'arbres

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15766119

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15766119

Country of ref document: EP

Kind code of ref document: A1