WO2016052390A1 - Photosensitive resin composition, method for producing cured film, cured film, liquid crystal display device, organic electroluminescent display device, and touch panel - Google Patents

Photosensitive resin composition, method for producing cured film, cured film, liquid crystal display device, organic electroluminescent display device, and touch panel Download PDF

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Publication number
WO2016052390A1
WO2016052390A1 PCT/JP2015/077288 JP2015077288W WO2016052390A1 WO 2016052390 A1 WO2016052390 A1 WO 2016052390A1 JP 2015077288 W JP2015077288 W JP 2015077288W WO 2016052390 A1 WO2016052390 A1 WO 2016052390A1
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group
resin composition
photosensitive resin
compound
structural unit
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PCT/JP2015/077288
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French (fr)
Japanese (ja)
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豪 安藤
大助 柏木
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富士フイルム株式会社
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/14Polysiloxanes containing silicon bound to oxygen-containing groups
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking

Definitions

  • the present invention relates to a photosensitive resin composition. More specifically, a photosensitive resin composition suitable for forming a flattening film, a protective film, an interlayer insulating film, and the like of electronic components such as a liquid crystal display device, an organic electroluminescence display device, a touch panel, an integrated circuit element, and a solid-state imaging element About.
  • the present invention also relates to a method for producing a cured film, a cured film obtained by curing a photosensitive resin composition, a liquid crystal display device using the cured film, an image display device such as an organic electroluminescence display device, and an input device such as a touch panel.
  • An image display device such as an organic electroluminescence display device and a liquid crystal display device, and an input device such as a touch panel are provided with a patterned interlayer insulating film.
  • a photosensitive resin composition is widely used because the number of steps for obtaining a required pattern shape is small and sufficient flatness is obtained. As a characteristic of the photosensitive resin composition, good sensitivity is required.
  • Patent Document 1 discloses a photosensitive resin composition containing an alkali-soluble siloxane polymer and a photosensitive compound having a 1,2-naphthoquinone diad group.
  • Patent Document 2 polysiloxane containing a structural unit having a carboxylic acid protected with an acid-decomposable group as component (A), a photoacid generator as component (B), an organic solvent as component (C), A photosensitive resin composition containing an epoxy group-containing siloxane compound as component (D) is disclosed.
  • Patent Document 3 discloses a photosensitive resin composition containing polysiloxane containing a structural unit having a protected silanol group and a structural unit having an epoxy group.
  • Patent Documents 4 to 6 disclose photosensitive resin compositions containing an acrylic resin, a photoacid generator, and a blocked isocyanate compound.
  • Patent Documents 4 to 6 describe that a photosensitive resin composition using an acrylic resin improves heat resistance, chemical resistance, substrate adhesion, and the like by containing a blocked isocyanate compound.
  • a photosensitive resin composition using an acrylic resin improves heat resistance, chemical resistance, substrate adhesion, and the like by containing a blocked isocyanate compound.
  • acrylic resin does not generate water during polycondensation during resin synthesis, forming a film using a photosensitive resin composition using an acrylic resin makes it difficult for water to be taken into the film, resulting in discoloration of the metal. It was not a problem in the first place.
  • an object of the present invention is to provide a photosensitive resin composition which has good sensitivity and hardly discolors a metal even when polysiloxane is used. Moreover, it is providing the manufacturing method of a cured film using the photosensitive resin composition, a cured film, a liquid crystal display device, an organic electroluminescent display device, and a touch panel.
  • a photosensitive resin composition comprising a polysiloxane component, a photoacid generator that generates an acid having a pKa of 3 or less, a solvent, and a blocked isocyanate compound. It has been found that a photosensitive resin composition having good sensitivity and heat resistance and hardly discoloring a metal can be obtained, and the present invention has been completed.
  • the present invention provides the following.
  • the structural unit a1 is selected from a group in which a carboxy group is protected by an acid-decomposable group, a group in which a phenolic hydroxyl group is protected by an acid-decomposable group, and a group in which a silanol group is protected by an acid-decomposable group
  • a polysiloxane component comprising a polysiloxane having a structural unit having at least one kind of group and a structural unit having a crosslinkable group as the structural unit a2.
  • the structural unit a1 is selected from a group in which a carboxy group is protected with an acid-decomposable group, a group in which a phenolic hydroxyl group is protected with an acid-decomposable group, and a group in which a silanol group is protected with an acid-decomposable group
  • a polysiloxane component comprising a polysiloxane having a structural unit having at least one kind of group and a polysiloxane having a structural unit having a crosslinkable group as the structural unit a2.
  • a component B a photoacid generator that generates an acid having a pKa of 3 or less
  • As component C a solvent
  • the blocked isocyanate compound is a compound obtained by protecting the isocyanate group of at least one compound selected from an isocyanate compound selected from tolylene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate and isophorone diisocyanate, and a multimer of isocyanate compounds.
  • a blocked isocyanate compound is a compound in which an isocyanate group is protected and a block structure is formed by a compound selected from an oxime compound, a lactam compound, a phenol compound, an alcohol compound, an amine compound, an active methylene compound, and a pyrazole compound.
  • the structural unit a1 is at least one selected from the structural unit represented by the following general formula a1-1 and the structural unit represented by the following general formula a1-2, ⁇ 1> to ⁇ 6 >
  • the photosensitive resin composition in any one of> In general formula a1-1 and general formula a1-2, a represents 0 or 1, R 1 and R 2 each independently represents a hydrogen atom, an alkyl group or an aryl group, at least one of R 1 and R 2 represents an alkyl group or an aryl group, and R 3 represents an alkyl group or an aryl group.
  • R 1 or R 2 and R 3 may be linked to form a cyclic ether
  • R 4 represents an alkyl group, an aryl group, or an aralkyl group
  • L 1 represents a single bond or a divalent linking group
  • L 2 represents a single bond or a divalent linking group
  • R x represents an alkyl group or a halogen atom
  • m1 represents an integer of 0 to 4.
  • ⁇ 9> The photosensitive resin composition according to any one of ⁇ 1> to ⁇ 8>, wherein the polysiloxane further includes a structural unit having at least one group selected from a carboxy group and a phenolic hydroxyl group.
  • the photoacid generator is at least one selected from an onium salt compound, an oxime sulfonate compound, and an imide sulfonate compound.
  • a method for producing a cured film comprising: exposing the exposed photosensitive resin composition; developing the exposed photosensitive resin composition; and thermally curing the developed photosensitive resin composition.
  • ⁇ 12> A cured film obtained by curing the photosensitive resin composition according to any one of ⁇ 1> to ⁇ 10>.
  • ⁇ 13> The cured film according to ⁇ 12>, which is an interlayer insulating film.
  • ⁇ 14> A liquid crystal display device having the cured film according to ⁇ 12> or ⁇ 13>.
  • An organic electroluminescence display device having the cured film according to ⁇ 12> or ⁇ 13>.
  • ⁇ 16> A touch panel having the cured film according to ⁇ 12> or ⁇ 13>.
  • composition conceptual diagram of an example of a liquid crystal display It is a composition conceptual diagram of other examples of a liquid crystal display.
  • 1 shows a conceptual diagram of a configuration of an example of an organic EL display device. It is sectional drawing which shows the structural example of a capacitive touch panel. It is explanatory drawing which shows an example of a front plate. It is explanatory drawing which shows an example of a 1st transparent electrode pattern and a 2nd transparent electrode pattern.
  • the solid content concentration in this specification refers to the solid content concentration at 25 ° C.
  • the viscosity in this specification refers to a viscosity at 25 ° C.
  • a weight average molecular weight and a number average molecular weight are defined as a polystyrene conversion value by a gel permeation chromatography (GPC) measurement.
  • the weight average molecular weight (Mw) and the number average molecular weight (Mn) are, for example, using HLC-8120 (manufactured by Tosoh Corporation) and using TSK gel Multipore HXL-M (manufactured by Tosoh Corporation) as a column. 7.8 mm ID ⁇ 30.0 cm can be determined by using THF (tetrahydrofuran) as the eluent.
  • the photosensitive resin composition of the present invention contains a polysiloxane component described later, a photoacid generator that generates an acid having a pKa of 3 or less, a solvent, and a blocked isocyanate compound. Since the photosensitive resin composition of this invention contains the polysiloxane component mentioned later and a photo-acid generator, a sensitivity is favorable. Moreover, the cured film excellent in heat resistance can also be formed by including a polysiloxane component. And discoloration of a metal can be suppressed by including a block isocyanate compound. The mechanism by which the discoloration of the metal can be suppressed by containing the blocked isocyanate compound is presumed to be as follows.
  • the photosensitive resin composition of the present invention can be preferably used as a chemically amplified positive photosensitive resin composition.
  • each component of the photosensitive resin composition of the present invention will be described in more detail.
  • the polysiloxane component satisfies at least one of the following (1) and (2).
  • a polysiloxane component comprising polysiloxane (A1) having a structural unit having at least one group and (a2) a structural unit having a crosslinkable group.
  • polysiloxane component comprising polysiloxane (A2) having a structural unit having at least one group and (a2) polysiloxane (A3) having a structural unit having a crosslinkable group.
  • a polysiloxane component means what included other polysiloxane added as needed in addition to the said polysiloxane.
  • At least one polysiloxane (A1) is contained, and the polysiloxane (A1) has the structural unit (a1) and the structural unit (a2).
  • Each of the structural unit (a1) and the structural unit (a2) may contain two or more types.
  • the structural unit (a3) which has an acid group mentioned later, and the structural unit (a4) may be included.
  • the proportion of the structural unit (a1) of the polysiloxane (A1) is preferably 10 to 90 mol% with respect to the total structural units of the polysiloxane (A1) from the viewpoint of sensitivity.
  • the lower limit is preferably 15 mol% or more, and more preferably 20 mol% or more.
  • the upper limit is preferably 80 mol% or less, and more preferably 60 mol% or less.
  • the proportion of the structural unit (a2) is preferably 10 to 90 mol% with respect to all the structural units of the polysiloxane (A1) from the viewpoint of cured film characteristics.
  • the lower limit is preferably 20 mol% or more, and more preferably 30 mol% or more.
  • the upper limit is preferably 80 mol% or less, and more preferably 70 mol% or less.
  • the proportion of the structural unit (a3) is preferably 0 to 50 mol% with respect to all the structural units of the polysiloxane (A1) from the viewpoint of sensitivity.
  • the lower limit is preferably 1 mol% or more, more preferably 5 mol% or more.
  • the upper limit is preferably 30 mol% or less, and more preferably 20 mol% or less.
  • the proportion of the structural unit (a4) is preferably 0 to 40 mol% with respect to all the structural units of the polysiloxane (A1) from the viewpoints of developability and cured film characteristics.
  • the lower limit is preferably 1 mol% or more, more preferably 5 mol% or more.
  • the upper limit is preferably 30 mol% or less, and more preferably 20 mol% or less.
  • the polysiloxane (A2) having the structural unit (a1) and the polysiloxane (A3) having the structural unit (a2) are included.
  • the polysiloxane (A2) containing the structural unit (a1) may further contain the structural unit (a2).
  • the polysiloxane (A3) containing the structural unit (a2) may contain the structural unit (a1).
  • the aspect satisfies both (1) and (2).
  • polysiloxane (A2) and polysiloxane (A3) may contain the structural unit (a3) which has the acid group mentioned later, and another structural unit (a4).
  • the proportion of the structural unit (a1) of the polysiloxane (A2) is preferably 10 to 90 mol% with respect to all the structural units of the polysiloxane (A2).
  • the lower limit is preferably 30 mol% or more, and more preferably 40 mol% or more.
  • the upper limit is preferably 90 mol% or less, and more preferably 80 mol% or less.
  • the proportion of the structural unit (a3) is preferably 0 to 50 mol% with respect to all the structural units of the polysiloxane (A2).
  • the lower limit is preferably 1 mol% or more, more preferably 5 mol% or more.
  • the upper limit is preferably 30 mol% or less, and more preferably 20 mol% or less.
  • the proportion of the structural unit (a4) is preferably 0 to 40 mol% with respect to all the structural units of the polysiloxane (A2).
  • the lower limit is preferably 1 mol% or more, more preferably 5 mol% or more.
  • the upper limit is preferably 30 mol% or less, and more preferably 20 mol% or less.
  • the proportion of the structural unit (a2) of the polysiloxane (A3) is preferably 10 to 90 mol% with respect to all the structural units of the polysiloxane (A3).
  • the lower limit is preferably 30 mol% or more, and more preferably 50 mol% or more.
  • the upper limit is preferably 90 mol% or less, and more preferably 80 mol% or less.
  • the proportion of the structural unit (a4) is preferably 0 to 40 mol% with respect to all the structural units of the polysiloxane (A3).
  • the lower limit is preferably 1 mol% or more, more preferably 5 mol% or more.
  • the upper limit is preferably 30 mol% or less, and more preferably 20 mol% or less.
  • the mass ratio of the polysiloxane (A2) having the structural unit (a1) and the polysiloxane (A3) having the structural unit (a2) is 95: 5 to 5:95. Is preferable, 80:20 to 20:80 is more preferable, and 70:30 to 30:70 is more preferable.
  • the structure of the polysiloxane used in the present invention is not particularly limited. Any of a straight chain shape, a ring shape, a ladder shape, and a mesh shape may be used, and a structure in which these are connected to each other may be used. It is preferable in terms of hardness of the cured film that a ladder-like or network-like structure is included.
  • the weight average molecular weight of the polysiloxane contained in the polysiloxane component is preferably 1,000 to 200,000, and more preferably 2,000 to 50,000. Various characteristics are favorable in the said range.
  • the ratio (dispersity) between the number average molecular weight and the weight average molecular weight is preferably 1.0 to 5.0, more preferably 1.5 to 3.5.
  • the polysiloxane used in the present invention includes a group in which a carboxy group is protected with an acid-decomposable group, a group in which a phenolic hydroxyl group is protected with an acid-decomposable group, and a group in which a silanol group is protected with an acid-decomposable group. It has a structural unit (a1) having at least one selected group.
  • the carboxy group, the phenolic hydroxyl group, and the silanol group are collectively referred to as an acid group.
  • a group in which a carboxy group is protected with an acid-decomposable group means a group that causes a deprotection reaction using an acid as a catalyst (or an initiator), and generates the above-described acid group, a regenerated acid, and a decomposed structure.
  • the acid group is preferably a carboxy group or a phenolic hydroxyl group, and more preferably a carboxy group.
  • An acid-decomposable group is a group that is relatively easily decomposed by an acid (for example, an acetal functional group such as an ester structure, a tetrahydropyranyl ester group, or a tetrahydrofuranyl ester group described later) or a group that is relatively difficult to decompose by an acid ( For example, a tertiary alkyl group such as a tert-butyl ester group or a tertiary alkyl carbonate group such as a tert-butyl carbonate group) can be used.
  • the structural unit (a1) preferably has a protected carboxy group in which a carboxy group is protected with an acetal group, or a protected phenol group in which a phenolic hydroxyl group is protected with an acetal group, and the carboxy group is protected with an acetal group. It is more preferable to have a protected carboxy group. According to this aspect, it is preferable from the viewpoints of basic physical properties of the photosensitive resin composition, particularly sensitivity, pattern shape, contact hole formability, and storage stability of the photosensitive resin composition.
  • the content of the group in which the silanol group is protected with an acid-decomposable group is preferably 30 mol% or less, more preferably 10 mol% or less, based on all the structural units of the polysiloxane including the structural unit (a1). More preferably, it is more preferably not more than mol%, and substantially not contained. “Substantially not contained” means, for example, preferably 1 mol% or less, more preferably 0.5 mol% or less, and even more preferably not to all polysiloxane structural units including the structural unit (a1). .
  • the structural unit (a1) is preferably a structural unit represented by the following general formula (a1-1) and / or a structural unit represented by the following general formula (a1-2).
  • a represents 0 or 1;
  • R 1 and R 2 each independently represents a hydrogen atom, an alkyl group or an aryl group, at least one of R 1 and R 2 represents an alkyl group or an aryl group, and
  • R 3 represents an alkyl group or an aryl group.
  • R 1 or R 2 and R 3 may be linked to form a cyclic ether,
  • R 4 represents an alkyl group, an aryl group, or an aralkyl group,
  • L 1 represents a single bond or a divalent linking group,
  • L 2 represents a single bond or a divalent linking group,
  • R x represents an alkyl group or a halogen atom,
  • m1 represents an integer of 0 to 4.
  • R 1 and R 2 each independently represents a hydrogen atom, an alkyl group or an aryl group, and at least one of R 1 and R 2 is an alkyl group or an aryl group.
  • the alkyl group an alkyl group having 1 to 10 carbon atoms is preferable, an alkyl group having 1 to 8 carbon atoms is more preferable, and an alkyl group having 1 to 6 carbon atoms is more preferable.
  • the alkyl group may be unsubstituted or may have a substituent.
  • the alkyl group may be linear, branched or cyclic, but is preferably a linear alkyl group.
  • alkyl group examples include a methyl group, an ethyl group, a propyl group, a butyl group, a t-butyl group, a pentyl group, a hexyl group, and a cyclohexyl group.
  • substituents that the alkyl group may have include an alkoxy group having 1 to 10 carbon atoms, a thioalkoxy group having 1 to 10 carbon atoms, a hydroxyl group, a cyano group, and a halogen atom (fluorine atom, chlorine atom, bromine atom). , Iodine atom) and the like. These substituents may further have a substituent.
  • an aryl group having 6 to 20 carbon atoms is preferable, an aryl group having 6 to 14 carbon atoms is more preferable, and an aryl group having 6 to 10 carbon atoms is further preferable.
  • the aryl group may be unsubstituted or may have a substituent.
  • Specific examples of the aryl group include a phenyl group, a naphthyl group, and an anthracenyl group. Examples of the substituent include those described above.
  • an alkyl group having 1 to 10 carbon atoms can be used as a substituent.
  • R 1 and R 2 are each independently preferably a hydrogen atom or an alkyl group, more preferably a hydrogen atom or a methyl group, and one of R 1 and R 2 is a methyl group.
  • the other is particularly preferably a hydrogen atom.
  • R 3 represents an alkyl group or an aryl group.
  • the alkyl group and aryl group represented by R 3 have the same meanings as the alkyl group and aryl group in R 1 and R 2 .
  • R 3 is preferably a methyl group, an ethyl group, or a propyl group, and more preferably an ethyl group or a propyl group.
  • R 3 may be linked to R 1 or R 2 to form a cyclic ether.
  • the cyclic ether formed by linking with R 1 or R 2 is preferably a 3- to 6-membered cyclic ether, more preferably a 5- to 6-membered cyclic ether.
  • R 4 represents an alkyl group, an aryl group, or an aralkyl group.
  • an alkyl group having 1 to 10 carbon atoms is preferable, an alkyl group having 1 to 8 carbon atoms is more preferable, and an alkyl group having 1 to 6 carbon atoms is more preferable.
  • the alkyl group may have a substituent.
  • the alkyl group may be linear, branched or cyclic.
  • an aryl group having 6 to 20 carbon atoms is preferable, an aryl group having 6 to 14 carbon atoms is more preferable, and an aryl group having 6 to 10 carbon atoms is further preferable.
  • the aryl group may have a substituent.
  • the aryl group examples include a phenyl group, a naphthyl group, and an anthracenyl group.
  • the aralkyl group a group in which a part of hydrogen atoms of an alkyl group having 1 to 10 carbon atoms is substituted with an aryl group having 6 to 20 carbon atoms is preferable.
  • the aralkyl group may have a substituent.
  • the alkyl group constituting the aralkyl group may be linear, branched or cyclic.
  • the substituents that the alkyl group, aryl group, and aralkyl group may have are the same as the substituents described for R 1 and R 2 .
  • R 4 is preferably a methyl group, a phenyl group, a propyl group, a butyl group, or a hexyl group from the viewpoint of solvent resistance or heat resistance, and more preferably a methyl group or a phenyl group.
  • R x represents an alkyl group or a halogen atom.
  • the alkyl group an alkyl group having 1 to 4 carbon atoms is preferable.
  • a halogen atom a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom are preferable.
  • L 1 and L 2 represent a single bond or a divalent linking group.
  • the divalent linking group include an alkylene group having 1 to 12 carbon atoms, an alkylene oxide group having 1 to 12 carbon atoms, and an arylene group having 6 to 12 carbon atoms.
  • the alkylene oxide group and the alkylene oxide group may be linear, branched or cyclic.
  • the alkylene group, alkylene oxide group, and arylene group may have a substituent. Examples of the substituent are the same as those described for R 1 and R 2 .
  • m1 represents an integer of 0 to 4, preferably 0 to 2, more preferably 0 to 1, and most preferably 0.
  • the structural unit represented by the general formula (a1-2) is preferably a structural unit represented by the following general formula (a1-2-1).
  • a 0 or 1
  • R 1 and R 2 each independently represents a hydrogen atom, an alkyl group, or an aryl group, and at least one of R 1 and R 2 is Represents an alkyl group or an aryl group
  • R 3 represents an alkyl group or an aryl group
  • R 1 or R 2 and R 3 may be linked to form a cyclic ether
  • R 4 represents an alkyl group
  • An aryl group or an aralkyl group is represented
  • L 2 represents a single bond or a divalent linking group
  • R x represents an alkyl group or a halogen atom
  • m1 represents an integer of 0 to 4.
  • silane compound that can be used for obtaining the structural unit (a1) include the following silane compounds.
  • the structural unit (a2) has a crosslinkable group.
  • the crosslinkable group means a group capable of causing a crosslinking reaction by heat.
  • the crosslinkable group is not particularly limited as long as it is a group having a crosslinking reaction starting temperature of 100 ° C. or higher during heat treatment at 1 atm.
  • the initiation temperature of the cross-linking reaction can be analyzed using a known method, for example, by a method using DSC measurement (Differential scanning calorimetry).
  • Examples of the crosslinkable group include a cyclic ether, a group having an ethylenically unsaturated bond, an alkoxymethyl group, a methylol group, and an amino group.
  • the crosslinkable group may be bonded via a linking group or the like.
  • Examples of the cyclic ether include an epoxy group and an oxetanyl group.
  • Examples of the group having an ethylenically unsaturated bond include vinyl group, allyl group, methallyl group, methacryloyl group, acryloyl group, allyloxycarbonyl group, and methallyloxycarbonyl group.
  • Examples of the alkoxymethyl group include a group represented by “—CH 2 OR”.
  • R represents an alkyl group having 1 to 8 carbon atoms, preferably an alkyl group having 1 to 4 carbon atoms, and more preferably a methyl group.
  • the alkyl group may be linear, branched or cyclic, but is preferably linear.
  • the amino group may be an amino group having a substituent or an unsubstituted amino group.
  • the crosslinkable group is preferably a cyclic ether or a group having an ethylenically unsaturated bond, more preferably a cyclic ether, still more preferably an epoxy group or an oxetanyl group, and particularly preferably an epoxy group. Cyclic ethers can consume unreacted acid groups to form a strong cured film.
  • crosslinkable group examples include the following, but are not limited thereto.
  • * represents a connecting portion with another group.
  • the structural unit (a2) may have at least one crosslinkable group in one structural unit, preferably 1 to 3 and more preferably 1.
  • the structural unit (a2) may all be of the same type or different types.
  • a plurality of crosslinkable groups are included, the same kind is preferable.
  • Examples of the structural unit (a2) include structural units represented by the following general formula (a2 ′).
  • a represents 0 or 1
  • R 5 represents an alkyl group, an aryl group or an aralkyl group
  • L 3 represents a single bond or a divalent linking group
  • X represents Represents a crosslinkable group.
  • the structural unit (a2) is a structural unit represented by the following general formula (a2-1) and / or a structural unit represented by the following general formula (a2-2) from the viewpoint of cured film properties. Is preferred.
  • a represents 0 or 1
  • R 5 represents an alkyl group, an aryl group or an aralkyl group
  • R y represents an alkyl group or a halogen atom
  • L 3 represents a single bond or a divalent linking group
  • n represents 0 or 1
  • m 2 represents an integer of 0 to 2 when n is 0, and 0 when n is 1.
  • m3 represents an integer from 0 to 6.
  • R 5 represents an alkyl group, an aryl group, or an aralkyl group.
  • the alkyl group, aryl group and aralkyl group are the same as the ranges described for R 4 in the above (a1-1) and (a1-2), and the preferred ranges are also the same.
  • L 3 represents a single bond or a divalent linking group.
  • the divalent linking group is the same as the range described for L 1 of (a1-1) and L 2 of (a1-2), and the preferred range is also the same.
  • R y represents an alkyl group or a halogen atom.
  • the alkyl group and the halogen atom are the same as the range described for R x in (a1-2) described above, and the preferred range is also the same.
  • n 0 or 1, and 0 is preferable.
  • m2 represents an integer of 0 to 2 when n is 0, and represents an integer of 0 to 3 when n is 1.
  • m2 is preferably 0.
  • m3 represents an integer of 0 to 6, and 0 is preferable.
  • silanes that can be used to obtain the structural unit (a2) include 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, and 3-methacryloxy. Mention may be made of propyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, etc. . Moreover, the silane compound shown below can also be used.
  • the polysiloxane component may contain the structural unit (a3) having an acid group.
  • the structural unit (a3) may contain a polysiloxane having at least one structural unit selected from the structural unit (a1) and the structural unit (a2).
  • the polysiloxane which does not contain a structural unit (a1) and a structural unit (a2) substantially may be contained.
  • Specific examples of the acid group include a carboxy group, a sulfonamide group, a phosphonyl group, a sulfonyl group, a phenolic hydroxyl group, a sulfonamide group, and a sulfonylimide group.
  • Preferred acid groups include a carboxy group and a phenolic hydroxyl group.
  • the structural unit (a3) having an acid group for example, a structure represented by the following general formula (a3-1) and / or a structure represented by the general formula (a3-2) are preferable specific examples. Can be mentioned.
  • a 0 or 1
  • R 6 represents an alkyl group, an aryl group, or an aralkyl group
  • L 4 represents a single bond or a divalent group
  • L 5 represents a single bond or a divalent linking group
  • R z represents an alkyl group or a halogen atom
  • m4 represents an integer of 0 to 4.
  • R 6 represents an alkyl group, an aryl group, or an aralkyl group.
  • the alkyl group, aryl group and aralkyl group are the same as the ranges described for R 4 in the above (a1-1) and (a1-2), and the preferred ranges are also the same.
  • L 4 represents a single bond or a divalent linking group.
  • the divalent linking group is the same as the range described for L 1 in (a1-1), and the preferred range is also the same.
  • L 5 represents a single bond or a divalent linking group.
  • the divalent linking group is the same as the range described for L 2 in (a1-2), and the preferred range is also the same.
  • R z represents an alkyl group or a halogen atom.
  • alkyl group and the halogen atom are the same as the range described for R x in (a1-2) described above, and the preferred range is also the same.
  • m4 represents an integer of 0 to 4, preferably 0 to 2, more preferably 0 to 1, and most preferably 0.
  • the structural unit represented by the general formula (a3-2) is preferably a structural unit represented by the following general formula (a3-2-1).
  • a 0 or 1
  • R 6 represents an alkyl group, an aryl group, or an aralkyl group
  • L 5 represents a single bond or a divalent linking group.
  • R z represents an alkyl group or a halogen atom
  • m4 represents an integer of 0-4.
  • silane compound that can be used to obtain the structural unit (a3) the same silane compound that can be used to obtain the structural unit (a1) can be used.
  • the polysiloxane component can contain a structural unit (a4) other than the structural units (a1) to (a3) described above.
  • a structural unit (a4) for example, a structure represented by general formula (a4-1) shown below is preferred.
  • a represents an integer of 0 to 3
  • b represents an integer of 0 to 3.
  • R 7 and R 8 each independently represents an alkyl group, an aryl group, or an aralkyl group.
  • the alkyl group, aryl group and aralkyl group represented by R 7 and R 8 are the same as the ranges described for R 4 in (a1-1) and (a1-2) described above, and the preferred ranges are also the same.
  • the polysiloxane component is the total number of moles of the structural unit (a1) and the moles of the structural unit (a3) and the number of moles of the structural unit (a2) in the total amount of polysiloxane contained in the photosensitive resin composition.
  • the ratio is preferably 10:90 to 90:10, more preferably 30:70 to 70:30, and still more preferably 40:60 to 60:40. If the ratio between the total number of moles of the structural unit (a1) and the moles of the structural unit (a3) and the mole number of the structural unit (a2) is in the above range, a cured film having excellent solvent resistance can be formed.
  • the polysiloxane contained in the polysiloxane component may contain silanol groups remaining during polymerization of the polysiloxane.
  • the number of silanol groups in the total amount of polysiloxane is preferably 0 to 0.5 times, more preferably 0 to 0.2 times, and most preferably 0 to 0.05 times the number of Si atoms in the polysiloxane. When the number of silanol groups is in the above range, the storage stability of the photosensitive resin composition is good.
  • the number of silanol groups in the total amount of polysiloxane here means the total number of silanol groups of the polysiloxane contained in the polysiloxane component. The same applies to the number of Si atoms.
  • the polysiloxane can be obtained by mixing and reacting a silane compound corresponding to each structural unit or oligosiloxane.
  • a silane compound corresponding to each structural unit or oligosiloxane For example, it can be obtained by hydrolysis and condensation of the corresponding trimethoxysilane or dimethoxysilane. Hydrolysis and condensation can be appropriately performed by known methods and conditions.
  • Japanese Patent Application Laid-Open No. 10-324748 especially 0085 paragraph to 0087 paragraph
  • Japanese Patent Application Laid-Open No. 2005-283939 particularly 0052 paragraph to 054 paragraph
  • Japanese Patent Application Laid-Open No. 2006-276598 particularly 0009 paragraph to 0030 paragraph
  • the procedures and conditions described in can be referred to.
  • the acid-decomposable group of the structural unit (a1) described above may be introduced using a protected silane compound or may be introduced by a polymer reaction.
  • a structural unit containing a carboxy group is introduced into (A) polysiloxane
  • the corresponding alkyl ester of carboxylic acid is used. It is preferable to synthesize a polysiloxane using a silane having an alkyl group and hydrolyze the alkyl ester by a general method to obtain a structural unit having a carboxy group.
  • an acid-decomposable group is formed by a so-called polymer reaction. It is preferable to introduce carboxy to protect the carboxy group.
  • a so-called polymer reaction is performed to produce an acid-decomposable group. It is preferable to protect the phenolic hydroxyl group by introducing.
  • the polysiloxane (A1) having the structural unit (a1) and the structural unit (a2) further has the structural unit (a3) and / or the structural unit (a4).
  • the polysiloxane (A2) having the structural unit (a1) further has the structural unit (a3) and / or the structural unit (a4).
  • the polysiloxane (A3) having the structural unit (a2) further has the structural unit (a3) and / or the structural unit (a4).
  • the structural unit (a1) and / or the structural unit (a4) substantially free of the structural unit (a1) and the structural unit (a2) the structural unit (a1) and / or The total amount of the polysiloxane having the structural unit (a2) and the polysiloxane having the structural unit (a3) and / or the structural unit (a4) substantially not including the structural unit (a1) and the structural unit (a2)
  • the mass ratio with respect to the total amount is preferably 99: 1 to 5:95, more preferably 97: 3 to 30:70, and still more preferably 95: 5 to 50:50.
  • the total content of the polysiloxane having the structural unit (a1) and / or the structural unit (a2) is preferably 60% by mass or more, preferably 70% by mass or more, and 90% by mass with respect to the total content of the polysiloxane. % Or more is most preferable.
  • the content of the (A) polysiloxane component in the photosensitive resin composition of the present invention is preferably 60 to 99% by mass with respect to the total solid content of the photosensitive resin composition.
  • the upper limit is more preferably 98% by mass or less, for example.
  • the lower limit is more preferably 65% by mass or more, and still more preferably 70% by mass or more.
  • the photosensitive resin composition of the present invention contains a photoacid generator that generates an acid having a pKa of 3 or less.
  • the photoacid generator is preferably one that generates an acid having a pKa of 2 or less.
  • pKa basically refers to pKa in water at 25 ° C. Those that cannot be measured in water refer to those measured after changing to a solvent suitable for measurement. Specifically, the pKa described in the chemical handbook can be referred to.
  • the acid having a pKa of 3 or less is preferably sulfonic acid or phosphonic acid, and more preferably sulfonic acid.
  • the photoacid generator is preferably a compound that reacts with actinic rays having a wavelength of 300 nm or more, preferably 300 to 450 nm, and generates an acid, but is not limited to its chemical structure. Further, a photoacid generator that is not directly sensitive to an actinic ray having a wavelength of 300 nm or more can also be used as a sensitizer if it is a compound that reacts with an actinic ray having a wavelength of 300 nm or more and generates an acid when used in combination with a sensitizer. It can be preferably used in combination.
  • Examples of the photoacid generator include onium salt compounds, trichloromethyl-s-triazines, diazomethane compounds, imide sulfonate compounds, oxime sulfonate compounds, and imide sulfonate compounds.
  • onium salt compounds trichloromethyl-s-triazines
  • diazomethane compounds imide sulfonate compounds
  • oxime sulfonate compounds oxime sulfonate compounds
  • imide sulfonate compounds imide sulfonate compounds.
  • a photo-acid generator can be used individually by 1 type or in combination of 2 or more types.
  • trichloromethyl-s-triazines diaryliodonium salts, triarylsulfonium salts, quaternary ammonium salts, and diazomethane derivatives include the compounds described in paragraph numbers 0083 to 0088 of JP2011-212494A. It can be illustrated.
  • onium salt compounds examples include diphenyliodonium salts, triarylsulfonium salts, sulfonium salts, benzothiazonium salts, tetrahydrothiophenium salts, and the like.
  • Compounds represented by the following general formula (1) and / or general formula (2) are preferred.
  • R 5 , R 6 and R 7 each independently represents an alkyl group or an aryl group, and in the case of representing an alkyl group, they may be linked together to form a ring, R 8 and R 9 each independently represents an aryl group, and X ⁇ represents a conjugate base.
  • R 5 , R 6 and R 7 each independently represents an alkyl group or an aryl group, and the alkyl group or aryl group may have a substituent.
  • substituents include an aryl group having 1 to 10 carbon atoms, a thioaryl group having 1 to 10 carbon atoms, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and a thioalkoxy group having 1 to 10 carbon atoms. , Hydroxyl group, cyano group, halogen atom (fluorine atom, chlorine atom, bromine atom, iodine atom) and the like. These substituents may further have a substituent.
  • the alkyl groups represented by R 5 , R 6 and R 7 are each preferably an alkyl group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and 1 to More preferred is an alkyl group of 4.
  • Examples of the alkyl group include a methyl group, an ethyl group, and a t-butyl group.
  • the two or more alkyl groups may be linked to each other to form a ring, and a hetero atom A ring may be formed via (for example, an oxygen atom, a sulfur atom, etc.).
  • Such a ring form is preferably a 5-membered ring (thiacyclopentane) or a 6-membered ring (thiacyclohexane) containing a sulfur atom.
  • the alkyl group may have a substituent.
  • the aryl group represented by R 5 , R 6 and R 7 is preferably an aryl group having 6 to 15 carbon atoms, and more preferably an aryl group having 6 to 10 carbon atoms.
  • the aryl group may have a substituent.
  • Aryl groups include phenyl, naphthyl, 4-methoxyphenyl, 4-chlorophenyl, 4-methylphenyl, 4-tertiarybutylphenyl, 4-phenylthiophenyl, 2,4,6-trimethyl. Examples thereof include a phenyl group and a 4-methoxy-1-naphthyl group. Of these, a phenyl group, a 4-methoxyphenyl group, and a 4-chlorophenyl group are preferable.
  • R 5 , R 6 and R 7 are preferably aryl groups, and preferably represent the same group.
  • X ⁇ represents a conjugate base.
  • the conjugate base represents a conjugate base of an alkyl sulfonic acid, a conjugate base of an aryl sulfonic acid, or a conjugate base of a bisperfluorosulfonylamide, and a conjugate base of an alkyl sulfonic acid or an aryl sulfonic acid is particularly preferable.
  • a conjugate base a conjugate base of an alkyl sulfonic acid having 1 to 7 carbon atoms is preferable, and a conjugate base having 1 to 4 carbon atoms is more preferable.
  • sulfonic acid When expressed in the form of an acid, for example, methanesulfonic acid, trifluoromethane Particularly preferred are sulfonic acid, n-propanesulfonic acid and heptanesulfonic acid.
  • conjugate base of the aryl sulfonic acid for example, benzene sulfonic acid, chlorobenzene sulfonic acid, and paratoluene sulfonic acid are particularly preferable when expressed in an acid form.
  • the aryl groups independently represented by R 8 and R 9 are the same as the aryl groups represented by R 5 , R 6 and R 7 in general formula (1), and the preferred ranges are also the same. is there. Specifically, R 8 and R 9 are particularly preferably a phenyl group, a 4-methoxyphenyl group, and a 4-chlorophenyl group. R 8 and R 9 preferably represent the same group.
  • the conjugate base represented by X ⁇ has the same meaning as X ⁇ in general formula (1), and the preferred range is also the same.
  • onium salt compound examples include 4,7-di-n-butoxy-1-naphthyltetrahydrothiophenium trifluoromethanesulfonate.
  • the following compounds and the compounds described in JP-A-2011-232648, paragraphs 0083 to 0085 can be exemplified.
  • Preferred examples of the oxime sulfonate compound that is, a compound having an oxime sulfonate structure include compounds having an oxime sulfonate structure represented by the following general formula (B1).
  • R 21 represents an alkyl group or an aryl group.
  • a wavy line represents a bond with another group.
  • the alkyl group in R 21 may be linear, branched or cyclic.
  • the alkyl group for R 21 is preferably a linear or branched alkyl group having 1 to 10 carbon atoms.
  • the alkyl group of R 21 may be substituted with a halogen atom, an aryl group having 6 to 11 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms.
  • the aryl group for R 21 is preferably an aryl group having 6 to 11 carbon atoms, and more preferably a phenyl group or a naphthyl group.
  • the aryl group of R 21 may be substituted with an alkyl group, an alkoxy group, or a halogen atom.
  • a preferred embodiment of the compound containing the oxime sulfonate structure represented by the general formula (B1) is an oxime sulfonate compound represented by the following general formula (B1-1).
  • R 42 represents an optionally substituted alkyl group or aryl group
  • X represents an alkyl group, an alkoxy group, or a halogen atom
  • m4 represents 0-3. Represents an integer, and when m4 is 2 or 3, a plurality of Xs may be the same or different.
  • the alkyl group as X is preferably a linear or branched alkyl group having 1 to 4 carbon atoms.
  • the alkoxy group as X is preferably a linear or branched alkoxy group having 1 to 4 carbon atoms.
  • the halogen atom as X is preferably a chlorine atom or a fluorine atom.
  • m4 is preferably 0 or 1.
  • m4 is 1, X is a methyl group, the substitution position of X is the ortho position, R 42 is a linear alkyl group having 1 to 10 carbon atoms, 7, A compound which is a 7-dimethyl-2-oxonorbornylmethyl group or a p-toluyl group is particularly preferred.
  • oxime sulfonate compound represented by the general formula (B1-1) include the following compounds.
  • Another preferred embodiment of the compound containing an oxime sulfonate structure represented by the above general formula (B1) is an oxime sulfonate compound represented by the following general formula (B1-2).
  • R 43 has the same meaning as R 42 in the formula (B1-1), and X 1 represents a halogen atom, a hydroxyl group, an alkyl group having 1 to 4 carbon atoms, or an alkyl group having 1 to 4 carbon atoms. Represents an alkoxy group, a cyano group or a nitro group, and n4 represents an integer of 0 to 5.
  • R 43 in the above general formula (B1-2) is methyl group, ethyl group, n-propyl group, n-butyl group, n-octyl group, trifluoromethyl group, pentafluoroethyl group, perfluoro-n- A propyl group, a perfluoro-n-butyl group, a p-tolyl group, a 4-chlorophenyl group or a pentafluorophenyl group is preferable, and an n-octyl group is particularly preferable.
  • X 1 is preferably an alkoxy group having 1 to 5 carbon atoms, and more preferably a methoxy group.
  • n4 is preferably from 0 to 2, particularly preferably from 0 to 1.
  • Another preferred embodiment of the compound containing an oxime sulfonate structure represented by the above general formula (B1) is a compound represented by the following general formula (OS-1).
  • R 101 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkoxy group, an alkoxycarbonyl group, an acyl group, a carbamoyl group, a sulfamoyl group, a sulfo group, a cyano group, an aryl group, or Represents a heteroaryl group.
  • R 102 represents an alkyl group or an aryl group.
  • X 101 represents —O—, —S—, —NH—, —NR 105 —, —CH 2 —, —CR 106 H—, or —CR 105 R 107 —, wherein R 105 to R 107 are alkyl groups.
  • R 121 to R 124 each independently represents a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkoxy group, an amino group, an alkoxycarbonyl group, an alkylcarbonyl group, an arylcarbonyl group, an amide group, a sulfo group, a cyano group, Or an aryl group is represented. Two of R 121 to R 124 may be bonded to each other to form a ring.
  • R 121 to R 124 are preferably a hydrogen atom, a halogen atom, and an alkyl group, and an embodiment in which at least two of R 121 to R 124 are bonded to each other to form an aryl group is also preferred. Among these, an embodiment in which all of R 121 to R 124 are hydrogen atoms is preferable from the viewpoint of sensitivity. Any of the functional groups described above may further have a substituent.
  • the compound containing the oxime sulfonate structure represented by the general formula (B1) As another preferred embodiment of the compound containing the oxime sulfonate structure represented by the general formula (B1), the following general formula (OS-3), the following general formula (OS-4) or the following general formula (OS-5) It is an oxime sulfonate compound represented by these.
  • R 22 , R 25 and R 28 each independently represents an alkyl group, an aryl group or a heteroaryl group
  • R 23 , R 26 and R 29 are Each independently represents a hydrogen atom, an alkyl group, an aryl group or a halogen atom
  • R 24 , R 27 and R 30 each independently represent a halogen atom, an alkyl group, an alkyloxy group, a sulfonic acid group, an aminosulfonyl group or an alkoxysulfonyl group.
  • X 1 to X 3 each independently represents an oxygen atom or a sulfur atom
  • n 1 to n 3 each independently represents 1 or 2
  • m 1 to m 3 each independently represents an integer of 0 to 6 To express.
  • the compound having an oxime sulfonate structure represented by the general formula (B1) is, for example, the general formulas (OS-6) to (OS-) described in paragraph No. 0117 of JP2012-163937A. It is particularly preferable that the compound is represented by any one of 11), the contents of which are incorporated herein.
  • Preferred ranges in the general formulas (OS-6) to (OS-11) are the preferred ranges of (OS-6) to (OS-11) described in paragraph numbers 0110 to 0112 of JP2011-221494A. It is the same.
  • oxime sulfonate compounds represented by the general formula (OS-3) to the general formula (OS-5) include compounds described in paragraph numbers 0114 to 0120 of JP2011-221494A. The present invention is not limited to these.
  • Another preferred embodiment of the compound containing an oxime sulfonate structure represented by the general formula (B1) is an oxime sulfonate compound represented by the following general formula (B1-3).
  • R 1 represents an alkyl group or an aryl group
  • R 2 represents an alkyl group, an aryl group, or a heteroaryl group
  • R 3 to R 6 each represent a hydrogen atom, an alkyl group, an aryl group, or a halogen atom.
  • R 3 and R 4 , R 4 and R 5 , or R 5 and R 6 may be bonded to form an alicyclic ring or an aromatic ring.
  • X represents —O— or —S—.
  • R 1 represents an alkyl group or an aryl group.
  • the alkyl group include linear, branched, and cyclic groups, and branched or cyclic groups are preferable.
  • the alkyl group preferably has 3 to 10 carbon atoms. In the case of a branched alkyl group, the number of carbon atoms is preferably 3-6. In the case of a cyclic alkyl group, the number of carbon atoms is preferably 5 to 7.
  • alkyl group examples include, for example, propyl group, isopropyl group, n-butyl group, s-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group, 1,1-dimethylpropyl group.
  • Hexyl group, 2-ethylhexyl group, cyclohexyl group, octyl group and the like preferably isopropyl group, tert-butyl group, neopentyl group, and cyclohexyl group.
  • the aryl group preferably has 6 to 12 carbon atoms, more preferably 6 to 8 carbon atoms, and still more preferably 6 to 7 carbon atoms.
  • Specific examples of the aryl group include a phenyl group and a naphthyl group, and a phenyl group is preferable.
  • the alkyl group and aryl group represented by R 1 may have a substituent. Examples of the substituent include a halogen atom (fluorine atom, chloro atom, bromine atom, iodine atom), linear, branched or cyclic alkyl group (eg, methyl group, ethyl group, propyl group), alkenyl group, alkynyl group.
  • R 1 is preferably an alkyl group from the viewpoint of transparency, and R 1 is a branched alkyl group having 3 to 6 carbon atoms from the viewpoint of achieving both storage stability and sensitivity.
  • R 1 is a branched alkyl group having 3 to 6 carbon atoms from the viewpoint of achieving both storage stability and sensitivity.
  • a cyclic alkyl group having 5 to 7 carbon atoms, or a phenyl group is preferable, and a branched alkyl group having 3 to 6 carbon atoms or a cyclic alkyl group having 5 to 7 carbon atoms is more preferable.
  • an isopropyl group, a tert-butyl group, a neopentyl group, and a cyclohexyl group are preferable, and a tert-butyl group and a cyclohexyl group are more preferable.
  • R 2 represents an alkyl group, an aryl group, or a heteroaryl group.
  • the alkyl group represented by R 2 is preferably a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms.
  • Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a tert-butyl group, a pentyl group, a neopentyl group, a hexyl group, and a cyclohexyl group, and preferably a methyl group It is.
  • the aryl group an aryl group having 6 to 10 carbon atoms is preferable.
  • Examples of the aryl group include a phenyl group, a naphthyl group, and a p-toluyl group (p-methylphenyl group), and a phenyl group and a p-toluyl group are preferable.
  • Examples of the heteroaryl group include a pyrrole group, an indole group, a carbazole group, a furan group, and a thiophene group.
  • the alkyl group, aryl group, and heteroaryl group represented by R 2 may have a substituent. Examples of the substituent include an alkyl group and an aryl group R 1 represents is same as the substituents which may be possessed.
  • R 2 is preferably an alkyl group or an aryl group, more preferably an aryl group, and more preferably a phenyl group.
  • As the substituent for the phenyl group a methyl group is preferred.
  • R 3 to R 6 each represent a hydrogen atom, an alkyl group, an aryl group, or a halogen atom (a fluorine atom, a chloro atom, a bromine atom, or an iodine atom).
  • the alkyl group represented by R 3 to R 6 has the same meaning as the alkyl group represented by R 2 , and the preferred range is also the same.
  • the aryl group represented by R 3 to R 6 has the same meaning as the aryl group represented by R 1 , and the preferred range is also the same.
  • R 3 to R 6 , R 3 and R 4 , R 4 and R 5 , or R 5 and R 6 may combine to form a ring, and the ring forms an alicyclic ring or an aromatic ring. It is preferable that a benzene ring is more preferable.
  • R 3 to R 6 are a hydrogen atom, an alkyl group, a halogen atom (fluorine atom, chloro atom, bromine atom), or R 3 and R 4 , R 4 and R 5 , or R 5 and R 6 It preferably constitutes a benzene ring, and a hydrogen atom, a methyl group, a fluorine atom, a chloro atom, a bromine atom, or R 3 and R 4 , R 4 and R 5 , or R 5 and R 6 are bonded to form a benzene ring Is more preferable.
  • Preferred embodiments of R 3 to R 6 are as follows. (Aspect 1) At least two are hydrogen atoms.
  • Ts represents a tosyl group (p-toluenesulfonyl group)
  • Me represents a methyl group
  • Bu represents an n-butyl group
  • Ph represents a phenyl group.
  • an imide sulfonate compound having a structure represented by the following general formula (B2) can be preferably used.
  • R 200 represents a monovalent organic group having 16 or less carbon atoms.
  • the wavy line represents a bond with another group.
  • R 200 represents a monovalent organic group having 16 or less carbon atoms.
  • R 200 preferably does not contain other than C, H, O, and F.
  • examples of R 200 include a methyl group, a trifluoromethyl group, a propyl group, a phenyl group, and a tosyl group.
  • a preferred embodiment of the compound containing the structure represented by the general formula (B2) is an imide sulfonate compound represented by the following general formula (I).
  • R 1 and R 2 each represent a group represented by the following general formula (A) or a hydrogen atom.
  • R 3 represents an aliphatic hydrocarbon group having 1 to 18 carbon atoms which may be substituted with any one or more of a halogen atom, an alkylthio group and an alicyclic hydrocarbon group, a halogen atom, an alkylthio group, an alkyl group and an acyl
  • B represents the group represented by the following general formula (B).
  • X 1 represents an oxygen atom or a sulfur atom
  • Y 1 represents a single bond or an alkylene group having 1 to 4 carbon atoms
  • R 4 represents a hydrocarbon group having 1 to 12 carbon atoms.
  • R 5 represents an alkylene group having 1 to 4 carbon atoms
  • R 6 represents a hydrogen atom, an optionally branched alkyl group having 1 to 4 carbon atoms, or an alicyclic carbon atom having 3 to 10 carbon atoms. Represents a hydrogen group, a heterocyclic group, or a hydroxyl group.
  • n represents an integer of 0 to 5. When n is 2 to 5, a plurality of R 5 may be the same or different.
  • X 1 represents an oxygen atom or a sulfur atom
  • Y 1 represents a single bond or an alkanediyl group having 1 to 4 carbon atoms
  • R 11 represents a hydrocarbon group having 1 to 12 carbon atoms
  • R 12 represents an alkanediyl group having 1 to 4 carbon atoms
  • R 13 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms which may have a branch or an alicyclic hydrocarbon having 3 to 10 carbon atoms.
  • m represents 0 to 5, and when m is 2 to 5, a plurality of R 12 may be the same or different.
  • Y 2 represents a single bond or an alkylene group having 1 to 4 carbon atoms
  • R 7 represents an alkylene group having 2 to 6 carbon atoms, a halogenated alkylene group having 2 to 6 carbon atoms
  • carbon Represents an arylene group having 6 to 20 carbon atoms, or a halogenated arylene group having 6 to 20 carbon atoms
  • R 8 represents a single bond, an alkylene group having 2 to 6 carbon atoms, a halogenated alkylene group having 2 to 6 carbon atoms, carbon Represents an arylene group having 6 to 20 carbon atoms or a halogenated arylene group having 6 to 20 carbon atoms
  • R 9 represents an alkyl group having 1 to 18 carbon atoms which may be branched, or 1 to 1 carbon atoms which may be branched.
  • a and b each independently represents 0 or 1, and at least one of a and b is 1.
  • the content of the (B) photoacid generator in the photosensitive resin composition of the present invention is preferably 0.1 to 10% by mass, and preferably 0.5 to 10% by mass, based on the total solid content of the photosensitive resin composition. Is more preferable, and 1 to 5% by mass is even more preferable.
  • the (B) photoacid generator is preferably contained in an amount of 0.1 to 10 parts by weight, more preferably 0.5 to 10 parts by weight, based on 100 parts by weight of the (A) polysiloxane component. Part by mass is more preferable.
  • Only 1 type may be sufficient as a photo-acid generator, and it can also use 2 or more types together. When using 2 or more types together, it is preferable that the total amount becomes the said range.
  • the photosensitive resin composition of the present invention contains a solvent.
  • the photosensitive resin composition of the present invention is preferably prepared as a solution in which the essential components of the present invention and further optional components described below are dissolved in a solvent.
  • a solvent a solvent that uniformly dissolves essential components and optional components and does not react with each component is used.
  • a known solvent can be used as the solvent.
  • ethylene glycol monoalkyl ethers ethylene glycol dialkyl ethers, ethylene glycol monoalkyl ether acetates, propylene glycol monoalkyl ethers, propylene glycol dialkyl ethers, propylene glycol monoalkyl ether acetates, diethylene glycol dialkyl ethers, diethylene glycol Examples thereof include monoalkyl ether acetates, dipropylene glycol monoalkyl ethers, dipropylene glycol dialkyl ethers, dipropylene glycol monoalkyl ether acetates, esters, ketones, amides, and lactones. Further, the solvent described in paragraph Nos.
  • the solvent that can be used in the present invention is a single type or a combination of two types, more preferably a combination of two types, propylene glycol monoalkyl ether acetates or dialkyl ethers, diacetates. And diethylene glycol dialkyl ethers or esters and butylene glycol alkyl ether acetates are more preferably used in combination.
  • the solvent is preferably a solvent having a boiling point of 130 ° C. or higher and lower than 160 ° C., a solvent having a boiling point of 160 ° C. or higher, or a mixture thereof.
  • Solvents having a boiling point of 130 ° C. or higher and lower than 160 ° C. include propylene glycol monomethyl ether acetate (boiling point 146 ° C.), propylene glycol monoethyl ether acetate (boiling point 158 ° C.), propylene glycol methyl-n-butyl ether (boiling point 155 ° C.), propylene glycol An example is methyl-n-propyl ether (boiling point 131 ° C.).
  • Solvents having a boiling point of 160 ° C or higher include ethyl 3-ethoxypropionate (boiling point 170 ° C), diethylene glycol methyl ethyl ether (boiling point 176 ° C), propylene glycol monomethyl ether propionate (boiling point 160 ° C), dipropylene glycol methyl ether acetate.
  • the content of the solvent in the photosensitive resin composition of the present invention is preferably 50 to 95 parts by mass with respect to 100 parts by mass of all components in the photosensitive resin composition. 55 mass% or more is more preferable, and 60 mass parts or more is further more preferable.
  • the upper limit is more preferably 90 parts by mass or less. Only one type of solvent may be used, or two or more types may be used. When using 2 or more types, it is preferable that the total amount becomes the said range.
  • the photosensitive resin composition of the present invention contains a blocked isocyanate.
  • the blocked isocyanate compound is not particularly limited as long as it is a compound having a blocked isocyanate group, but is preferably a compound having two or more blocked isocyanate groups in one molecule.
  • the upper limit of the number of blocked isocyanate groups is preferably 6 or less.
  • a blocked isocyanate compound points out the compound different from the polysiloxane demonstrated by the (A) polysiloxane component mentioned above.
  • the “block isocyanate group” in the present invention means a group capable of generating an isocyanate group by heat, and a group obtained by reacting a blocking agent with an isocyanate group to protect the isocyanate group can be preferably exemplified.
  • the blocked isocyanate group is preferably a group capable of generating an isocyanate group by heat at 90 to 250 ° C., for example.
  • the molecular weight of the blocked isocyanate compound is preferably 100 to 2000.
  • the lower limit is more preferably 150 or more, and even more preferably 200 or more.
  • the upper limit is more preferably 1000 or less, and still more preferably below.
  • the molecular weight of the blocked isocyanate compound is a theoretical value calculated from the structural formula, and when the molecular weight cannot be calculated from the structural formula, it is a weight average molecular weight based on polystyrene conversion by GPC measurement.
  • the isocyanate compound serving as the skeleton of the blocked isocyanate compound is not particularly limited, and any compound may be used as long as it has two isocyanate groups in one molecule. Any of aliphatic, alicyclic or aromatic polyisocyanate compounds may be used.
  • 2,4-tolylene diisocyanate 2,6-tolylene diisocyanate, isophorone diisocyanate, 1,6-hexamethylene diisocyanate, 1,3-trimethylene diisocyanate, 1,4-tetramethylene diisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, 2,4,4-trimethylhexamethylene diisocyanate, 1,9-nonamethylene diisocyanate, 1,10-decamethylene diisocyanate, 1,4-cyclohexane diisocyanate, 2,2'- Diethyl ether diisocyanate, diphenylmethane-4,4′-diisocyanate, o-xylene diisocyanate, m-xylene diisocyanate, p-xylene diisocyanate, methylene bis (cyclohexane Isocyanate), cyclohexane-1,3-dimethylene diisocyanate
  • blocked isocyanate compounds in which the isocyanate group of at least one compound selected from tolylene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate and isophorone diisocyanate, and a multimer of these isocyanate compounds is protected.
  • the isocyanate compound multimer is not particularly limited as long as it is a dimer or higher multimer (preferably a dimer or trimer), and examples thereof include a biuret structure, an adduct structure, and an isocyanurate structure. A biuret structure is preferred.
  • the biuret structure is a structure represented by the following formula (bi), preferably a structure represented by the following formula (bi-1), and a structure represented by the following formula (bi-2). It is more preferable.
  • the wavy line portion is a portion connected to another structure.
  • R 1 , R 2 and R 3 each independently represent a group other than an isocyanate group of the isocyanate compound, and R 4 and R 5 each independently Represents a hydrogen atom, an alkyl group or an aryl group.
  • the method for forming the biuret structure is not particularly limited and may be formed by a known method.
  • the biuret structure can be easily formed by trimerization of an isocyanate compound.
  • the adduct structure refers to an adduct of a polyhydric alcohol and an isocyanate compound.
  • an isocyanate compound used for formation of an adduct structure the isocyanate compound mentioned above is mentioned, A diisocyanate compound is preferable.
  • the molecular weight of the diisocyanate compound is preferably 100 to 1000.
  • the polyhydric alcohol used for forming the adduct structure the lower limit of the valence is preferably 3 or more, and the upper limit of the valence is preferably 6 or less.
  • the molecular weight those having a molecular weight of 50 to 700 are preferred, and those having a molecular weight of 50 to 500 are more preferred.
  • the polyhydric alcohol used in the present invention is preferably a group in which three or more OH groups are bonded to a branched aliphatic hydrocarbon group.
  • the aliphatic hydrocarbon group preferably has 3 to 30 carbon atoms, more preferably 4 to 20 carbon atoms.
  • the number of OH groups is preferably 3-6.
  • glycerol trimethylolethane, trimethylolpropane (TMP), trimethyloloctane, 1,2,6-hexanetriol, 2,4-dihydroxy-3-hydroxymethylpentane, 1,1,1-tris
  • Trivalent alcohols such as (bishydroxymethyl) propane and 2,2-bis (hydroxymethyl) butanol; tetrahydric alcohols such as pentaerythritol and diglycerol; pentavalent alcohols such as arabit, ribitol and xylitol (pentit); Examples thereof include hexavalent alcohols (hexit) such as mannit, galactitol, and allozulcit.
  • trimethylolpropane and pentaerythritol are particularly preferable.
  • examples of commercially available isocyanate compounds having an adduct structure include Takenate D-140N and D-212L (manufactured by Mitsui Chemicals, Inc.).
  • the blocked isocyanate compound having an adduct structure is preferably a compound represented by the following general formula (ad).
  • Ra- ⁇ O (C O) -NH-Rb-NCO-B ⁇ n (ad)
  • Ra is an n-valent hydrocarbon group
  • Rb is a divalent hydrocarbon group
  • B represents a group that blocks isocyanate.
  • n is an integer of 3-6.
  • n Rb and B may be the same or different.
  • Ra is a hydrocarbon group, preferably an aliphatic hydrocarbon group, and preferably a branched aliphatic hydrocarbon group.
  • the carbon number of Ra is preferably 3 to 30, more preferably 4 to 20, and still more preferably 4 to 15.
  • Rb is a hydrocarbon group, and may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group. Further, it may be a linear, branched or cyclic hydrocarbon group. Rb preferably has 2 to 30 carbon atoms, more preferably 2 to 20 carbon atoms, and still more preferably 2 to 15 carbon atoms. B is more preferably a group derived from a blocking agent described later, and more preferably a group derived from an oxime compound. n is an integer of 3 to 6, and 3 or 4 is more preferable.
  • the isocyanurate structure is a structure represented by the following formula (cy).
  • the wavy line portion is a portion connected to another structure.
  • R 1 , R 2 and R 3 each independently represent a group other than the isocyanate group of the isocyanate compound.
  • Examples of the blocking agent that forms the block structure of the blocked isocyanate compound include an oxime compound, a lactam compound, a phenol compound, an alcohol compound, an amine compound, an active methylene compound, a pyrazole compound, a mercaptan compound, an imidazole compound, and an imide compound.
  • oxime compounds, lactam compounds, phenol compounds, alcohol compounds, amine compounds, active methylene compounds, or pyrazole compounds are preferable, oxime compounds and lactam compounds are more preferable, oxime compounds are more preferable, and methyl ethyl ketone oxime is more preferable.
  • Examples of the oxime compound include oxime and ketoxime.
  • acetoxime examples include acetoxime, formaldoxime, cyclohexane oxime, methyl ethyl ketone oxime, cyclohexanone oxime, and benzophenone oxime.
  • lactam compound examples include ⁇ -caprolactam and ⁇ -butyrolactam.
  • phenol compound examples include phenol, naphthol, cresol, xylenol, and halogen-substituted phenol.
  • the alcohol compound examples include methanol, ethanol, propanol, butanol, cyclohexanol, ethylene glycol monoalkyl ether, propylene glycol monoalkyl ether, and alkyl lactate.
  • Examples of the amine compound include primary amines and secondary amines, which may be aromatic amines, aliphatic amines, and alicyclic amines, and examples thereof include aniline, diphenylamine, ethyleneimine, and polyethyleneimine.
  • Examples of the active methylene compound include diethyl malonate, dimethyl malonate, ethyl acetoacetate, methyl acetoacetate and the like.
  • Examples of the pyrazole compound include pyrazole, methylpyrazole, dimethylpyrazole and the like.
  • Examples of the mercaptan compound include alkyl mercaptans and aryl mercaptans.
  • the blocked isocyanate compound is available as a commercial product.
  • Coronate AP Stable M Coronate 2503, 2515, 2507, 2513, 2555, Millionate MS-50 (above, manufactured by Nippon Polyurethane Industry Co., Ltd.), Takenate B -830, B-815N, B-820NSU, B-842N, B-84N, B-870N, B-874N, B-882N (manufactured by Mitsui Chemicals, Inc.), Duranate 17B-60P, 17B-60PX, 17B-60P, TPA-B80X, TPA-B80E, MF-B60X, MF-B60B, MF-K60X, MF-K60B, E402-B80B, SBN-70D, SBB-70P, K6000 (above, manufactured by Asahi Kasei Chemicals Corporation) ), Death Module BL1100, BL12 5 MPA / X, BL3575 / 1,
  • the content of the (S) blocked isocyanate compound in the photosensitive resin composition of the present invention is preferably 0.1 to 15% by mass with respect to the total solid content of the photosensitive resin composition.
  • the lower limit is more preferably 0.5% by mass or more, and further preferably 1% by mass or more.
  • the upper limit is more preferably 10% by mass or less, and still more preferably 5% by mass or less.
  • the (S) blocked isocyanate compound is preferably contained in an amount of 0.1 to 15 parts by weight, more preferably 0.5 to 10 parts by weight, based on 100 parts by weight of the (A) polysiloxane component. Part is more preferred.
  • (S) A block isocyanate compound may be only 1 type and can also use 2 or more types together. When using 2 or more types together, it is preferable that a total amount is the said range.
  • the photosensitive resin composition of the present invention can contain a sensitizer in order to promote the decomposition of the photoacid generator in combination with the photoacid generator.
  • the sensitizer absorbs actinic rays or radiation and enters an electronically excited state.
  • the sensitizer in an electronically excited state comes into contact with the photoacid generator, and effects such as electron transfer, energy transfer, and heat generation occur.
  • a photo-acid generator raise
  • preferable sensitizers include compounds belonging to the following compounds and having an absorption wavelength in any of the wavelength ranges of 350 to 450 nm.
  • Polynuclear aromatics eg, pyrene, perylene, triphenylene, anthracene, 9,10-dibutoxyanthracene, 9,10-diethoxyanthracene, 3,7-dimethoxyanthracene, 9,10-dipropyloxyanthracene
  • xanthenes Eg, fluorescein, eosin, erythrosine, rhodamine B, rose bengal
  • xanthones eg, xanthone, thioxanthone, dimethylthioxanthone, diethylthioxanthone
  • cyanines eg, thiacarbocyanine, oxacarbocyanine
  • merocyanines For example, merocyanine, carbomerocyanine), rhodocyanines, oxonols, thiazines (eg, thionine, methylene blue, to
  • polynuclear aromatics polynuclear aromatics, acridones, styryls, base styryls, and coumarins are preferable, and polynuclear aromatics are more preferable.
  • polynuclear aromatics anthracene derivatives are most preferred.
  • the content of the sensitizer is preferably 0 to 1000 parts by weight, more preferably 10 to 500 parts by weight, and more preferably 50 to 200 parts by weight with respect to 100 parts by weight of the photoacid generator. Further preferred. Only one type of sensitizer may be used, or two or more types may be used in combination. When using 2 or more types together, it is preferable that a total amount is the said range.
  • the photosensitive resin composition of this invention can contain crosslinking agents other than the block isocyanate compound mentioned above as needed. By adding a crosslinking agent, the cured film obtained by the photosensitive resin composition of the present invention can be made a stronger film.
  • the crosslinking agent is a compound containing at least two crosslinking groups in the molecule.
  • the cross-linking group means a group that reacts with one or more kinds selected from a cross-linkable group, a benzene ring, a hydroxy group, and a carboxy group of polysiloxane by heat.
  • a methylol group, an epoxy group, an oxetanyl group, an alkoxymethyl group, a methacryloyl group and an acryloyl group are preferable, and a methylol group, an epoxy group, an alkoxymethyl group, a methacryloyl group and an acryloyl group are more preferable.
  • the number of crosslinking groups in one molecule of the crosslinking agent is preferably 3 or more, and more preferably 4 or more.
  • the cross-linking group may have two or more of the same type of cross-linking group in the molecule, or may have two or more different types of cross-linking groups in the molecule.
  • the molecular weight of the crosslinking agent is preferably from 150 to 30,000, more preferably from 200 to 10,000. By setting it as such a range, the effect of this invention is exhibited more effectively.
  • the content of the crosslinking agent is 0.01 to 50 parts by mass with respect to 100 parts by mass of the total solid content of the photosensitive resin composition.
  • the amount is 0.1 to 30 parts by mass, and more preferably 0.5 to 20 parts by mass. If it is the said range, the cured film excellent in mechanical strength and solvent tolerance will be obtained. Only one type of crosslinking agent may be used, or two or more types may be used in combination. When using 2 or more types together, it is preferable that a total amount is the said range.
  • the photosensitive resin composition of this invention can also be set as the structure which does not contain a crosslinking agent substantially. The configuration that is not practically used means that the crosslinking agent is, for example, 1% by mass or less of the solid content of the photosensitive resin composition.
  • a compound having two or more epoxy groups in the molecule can be used as the crosslinking agent.
  • Specific examples of compounds having two or more epoxy groups in the molecule include bisphenol A type epoxy resins, bisphenol F type epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, aliphatic epoxy resins, and epoxy group containing An acrylic resin having a structural unit can be given. These are available as commercial products. For example, JER152, JER157S70, JER157S65, JER806, JER828, JER1007 (manufactured by Mitsubishi Chemical Holdings Co., Ltd.) and the like are commercially available products described in paragraph No.
  • Crosslinking agent containing two or more alkoxymethyl groups or methylol groups in the molecule a crosslinking agent containing an alkoxymethyl group or a methylol group can be used as the crosslinking agent.
  • the crosslinking agent containing two or more alkoxymethyl groups or methylol groups in the molecule is a crosslinking agent having two or more structures represented by the following general formula (1) or general formula (2) in the molecule. , One or both of an alkoxymethyl group and a methylol group are contained in the molecule in a total of two or more.
  • —CH 2 OR 1 (1) (Wherein R 1 represents an alkyl group having 1 to 8 carbon atoms, preferably an alkyl group having 1 to 4 carbon atoms, and more preferably a methyl group.) —CH 2 OH (2)
  • the alkoxymethyl group or methylol group is preferably bonded to a nitrogen atom or a carbon atom forming an aromatic ring.
  • Alkoxymethylated melamine, alkoxymethylated benzoguanamine, alkoxymethylated glycoluril, and alkoxymethylated urea convert methylolated melamine, methylolated benzoguanamine, methylolated glycoluril, or methylol group of methylolated urea to alkoxymethyl group, respectively.
  • Examples of the alkoxymethyl group include a methoxymethyl group, an ethoxymethyl group, a propoxymethyl group, and a butoxymethyl group, and the methoxymethyl group is particularly preferable from the viewpoint of outgas generation amount.
  • alkoxymethylated melamine, methylolated melamine, alkoxymethylated benzoguanamine, methylolated benzoguanamine, alkoxymethylated glycoluril, methylolated glycoluril are preferred, and from the viewpoint of transparency, alkoxymethylated glycoluril and methylol Glycoluril is particularly preferred.
  • an alkoxymethyl group-containing crosslinking agent described in paragraph No. 0107 of JP2012-8223A can be used, and the contents thereof are incorporated herein.
  • Preferred structures of the crosslinking agent containing two or more alkoxymethyl groups or methylol groups in the molecule include compounds represented by the following formulas (8-1) to (8-4).
  • R 7 each independently represents a hydrogen atom or an alkyl group having 1 to 8 carbon atoms
  • R 8 to R 11 each independently represents a hydrogen atom
  • a hydroxyl group, an alkyl group or an alkoxyl group is represented
  • X 2 represents a single bond, a methylene group or an oxygen atom.
  • the alkyl group represented by R 7 has 1 to 8 carbon atoms, more preferably 1 to 4 carbon atoms, and examples thereof include a methyl group, an ethyl group, and a propyl group.
  • the alkyl group represented by R 8 to R 11 preferably has 1 to 8 carbon atoms, more preferably 1 to 4 carbon atoms, and examples thereof include a methyl group, an ethyl group, and a propyl group.
  • the alkoxyl group represented by R 8 to R 11 preferably has 1 to 8 carbon atoms, more preferably 1 to 4 carbon atoms, and examples thereof include a methoxy group, an ethoxy group, and a propoxy group.
  • X 2 is preferably a single bond or a methylene group.
  • R 7 to R 11 and X 2 may be substituted with an alkyl group such as a methyl group or an ethyl group, or a halogen atom.
  • the plurality of R 7 and R 8 to R 11 may be the same or different.
  • Crosslinkers containing two or more alkoxymethyl groups or methylol groups in the molecule are also available as commercial products, for example, Cymel 300, 301, 303, 370, 325, 327, 701, 266, 267, 238, 1141, 272, 202, 1156, 1158, 1123, 1170, 1174, UFR65, 300 (above, manufactured by Mitsui Cyanamid Co., Ltd.), Nicalac MX-750, -032, -706, -708, -40,- 31, -270, -280, -290, -750LM, Nicarak MS-11, Nicarak MW-30HM, -100LM, -390, (manufactured by Sanwa Chemical Co., Ltd.) and the like can be preferably used. These can be used alone or in combination of two or more.
  • a compound containing two or more methacryloyl groups or acryloyl groups in the molecule may be used as a crosslinking agent.
  • the compound containing a methacryloyl group or an acryloyl group is a compound selected from the group consisting of acrylic acid esters and methacrylic acid esters. It is preferable that the acryloyl group and the methacryloyl group are compounds having two or more, more preferably trifunctional or more in one molecule.
  • bifunctional (meth) acrylate examples include ethylene glycol (meth) acrylate, 1,6-hexanediol di (meth) acrylate, 1,9-nonanediol di (meth) acrylate, polypropylene glycol di (meth) acrylate, Examples include tetraethylene glycol di (meth) acrylate, bisphenoxyethanol full orange acrylate, and bisphenoxyethanol full orange acrylate.
  • Examples of the tri- or more functional (meth) acrylate include trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, tri ((meth) acryloyloxyethyl) phosphate, pentaerythritol tetra (meth) acrylate. , Dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and the like.
  • Preferable commercially available products are KAYARAD DPHA manufactured by Nippon Kayaku Co., Ltd., NK ester series manufactured by Shin-Nakamura Chemical Co., Ltd., bifunctional A-200, A-400, A-600, A-1000, ABE-300, A- BPE-4, A-BPE-10, A-BPE-20, A-BPE-30, A-BPP-3, A-DOD, A-DCP, A-IBD-2E, A-NPG, 701A, A- B1206PE, A-HD-N, A-NOD-N, APG-100, APG-200, APG-400, APG-700, 1G, 2G, 3G, 4G, 9G, 14G, 23G, BG, BD, HD- N, NOD, IND, BPE-100, BPE-200, BPE-300, BPE-500, BPE-900, BPE-1300N, NPG, DCP, 1206PE, 701, 3 G, 9PG, tri
  • a compound containing an oxetanyl group may be used as a crosslinking agent. It is preferable that there are two or more oxetanyl groups in the molecule.
  • the compound having two or more oxetanyl groups in the molecule include the compounds described in paragraphs 0134 to 0145 of JP-A-2008-224970, the contents of which are incorporated herein.
  • Aron Oxetane OXT-121, OXT-221, OX-SQ, and PNOX (above, manufactured by Toagosei Co., Ltd.) can be used.
  • the photosensitive resin composition of the present invention can contain a basic compound.
  • the basic compound can be arbitrarily selected from those used in chemically amplified resists. Examples include aliphatic amines, aromatic amines, heterocyclic amines, quaternary ammonium hydroxides, quaternary ammonium salts of carboxylic acids, and the like. Specific examples thereof include compounds described in JP-A 2011-212494, paragraphs 0204 to 0207, the contents of which are incorporated herein.
  • aliphatic amine for example, trimethylamine, diethylamine, triethylamine, di-n-propylamine, tri-n-propylamine, tributylamine, di-n-pentylamine, tri-n-pentylamine, Examples include diethanolamine, triethanolamine, dicyclohexylamine, and dicyclohexylmethylamine.
  • aromatic amine examples include aniline, benzylamine, N, N-dimethylaniline, diphenylamine and the like.
  • heterocyclic amine examples include pyridine, 2-methylpyridine, 4-methylpyridine, 2-ethylpyridine, 4-ethylpyridine, 2-phenylpyridine, 4-phenylpyridine, N-methyl-4-phenylpyridine, 4-dimethylaminopyridine, imidazole, benzimidazole, 4-methylimidazole, 2-phenylbenzimidazole, 2,4,5-triphenylimidazole, nicotine, nicotinic acid, nicotinamide, quinoline, 8-oxyquinoline, pyrazine, Pyrazole, pyridazine, purine, pyrrolidine, piperidine, piperazine, morpholine, 4-methylmorpholine, N-cyclohexyl-N ′-[2- (4-morpholinyl) ethyl] thiourea, 1,5-diazabicyclo [4.3.0 ] -5-Nonene, 1,8-di And azabicyclo
  • Examples of the quaternary ammonium hydroxide include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetra-n-butylammonium hydroxide, tetra-n-hexylammonium hydroxide, and the like.
  • Examples of the quaternary ammonium salt of carboxylic acid include tetramethylammonium acetate, tetramethylammonium benzoate, tetra-n-butylammonium acetate, tetra-n-butylammonium benzoate and the like.
  • the content of the basic compound is preferably 0.001 to 3 parts by mass and more preferably 0.005 to 1 part by mass with respect to 100 parts by mass of the total solid content in the photosensitive resin composition.
  • a basic compound may be used individually by 1 type, or may use 2 or more types together. When using 2 or more types together, it is preferable that a total amount is the said range.
  • the photosensitive resin composition of the present invention can contain a surfactant.
  • a surfactant any of anionic, cationic, nonionic, or amphoteric can be used, but a preferred surfactant is a nonionic surfactant.
  • examples of the surfactant used in the composition of the present invention include those described in paragraph Nos. 0201 to 0205 in JP2012-88459A, and paragraphs 0185 to 0188 in JP2011-215580A. Can be used and these descriptions are incorporated herein.
  • nonionic surfactants include polyoxyethylene higher alkyl ethers, polyoxyethylene higher alkyl phenyl ethers, higher fatty acid diesters of polyoxyethylene glycol, silicone-based and fluorine-based surfactants. .
  • trade names are FA-630, KP-341, X-22-822 (manufactured by Shin-Etsu Chemical Co., Ltd.), Polyflow No.
  • the surfactant is measured by gel permeation chromatography using the structural unit A and the structural unit B represented by the following general formula (I-1-1) and using tetrahydrofuran (THF) as a solvent.
  • a preferred example is a copolymer having a polystyrene-reduced weight average molecular weight (Mw) of 1,000 or more and 10,000 or less.
  • R 401 and R 403 each independently represent a hydrogen atom or a methyl group
  • R 402 represents a linear alkylene group having 1 to 4 carbon atoms
  • R 404 represents hydrogen.
  • L represents an alkylene group having 3 to 6 carbon atoms
  • p and q are mass percentages representing a polymerization ratio
  • p is 10 mass% to 80 mass%.
  • the following numerical values are represented, q represents a numerical value of 20% to 90% by mass, r represents an integer of 1 to 18, and s represents an integer of 1 to 10.
  • L is preferably a branched alkylene group represented by the following general formula (I-1-2).
  • R 405 in formula (I-1-2) represents an alkyl group having 1 to 4 carbon atoms, and preferably an alkyl group having 1 to 3 carbon atoms in terms of compatibility and wettability with respect to the coated surface. And an alkyl group having 2 or 3 carbon atoms is more preferred.
  • the weight average molecular weight (Mw) of the copolymer is more preferably from 1,500 to 5,000.
  • the content of the surfactant is preferably 10 parts by mass or less, more preferably 0.001 to 10 parts by mass with respect to 100 parts by mass of the total solid content in the photosensitive resin composition. More preferably, the content is 0.01 to 3 parts by mass.
  • Surfactant may be used individually by 1 type, or may use 2 or more types together. When using 2 or more types together, it is preferable that a total amount is the said range.
  • the photosensitive resin composition of the present invention may contain an antioxidant.
  • an antioxidant a well-known antioxidant can be contained. By adding an antioxidant, there is an advantage that coloring of the cured film can be prevented, or a decrease in film thickness due to decomposition can be reduced, and heat-resistant transparency is excellent.
  • antioxidants include phosphorus antioxidants, amides, hydrazides, hindered amine antioxidants, sulfur antioxidants, phenol antioxidants, ascorbic acids, zinc sulfate, sugars, nitrites, sulfites. Examples thereof include salts, thiosulfates, and hydroxylamine derivatives.
  • phenolic antioxidants hindered amine antioxidants, phosphorus antioxidants, amide antioxidants, hydrazide antioxidants, sulfur antioxidants from the viewpoint of coloring the cured film and reducing film thickness Agents are preferred, and phenolic antioxidants are most preferred. These may be used individually by 1 type and may mix 2 or more types. Specific examples include compounds described in paragraph numbers 0026 to 0031 of JP-A-2005-29515, and compounds described in paragraph numbers 0106 to 0116 of JP-A-2011-227106. It is incorporated herein.
  • Preferred commercially available products are ADK STAB AO-20, ADK STAB AO-60, ADK STAB AO-80, ADK STAB LA-52, ADK STAB LA-81, ADK STAB AO-412S, ADK STAB PEP-36, IRGANOX 1035, IRGANOX 1098, and Tinuvin 144.
  • the content of the antioxidant is preferably 0.1 to 10% by mass, more preferably 0.2 to 5% by mass, based on the total solid content of the photosensitive resin composition. It is particularly preferably 5 to 4% by mass. By setting it within this range, it is easy to form a film having excellent transparency. Furthermore, the sensitivity at the time of pattern formation is also good.
  • an acid proliferating agent can be used for the purpose of improving sensitivity.
  • the acid proliferating agent is a compound that can further generate an acid by an acid-catalyzed reaction to increase the acid concentration in the reaction system, and is a compound that exists stably in the absence of an acid.
  • Specific examples of the acid proliferating agent include acid proliferating agents described in paragraph numbers 0226 to 0228 of JP2011-212494A, the contents of which are incorporated herein.
  • the photosensitive resin composition of the present invention can contain a development accelerator.
  • a development accelerator those described in paragraphs 0171 to 0172 of JP2012-042837A can be referred to, and the contents thereof are incorporated herein.
  • the content of the development accelerator in the photosensitive resin composition of the present invention is preferably 0 to 30 parts by mass with respect to 100 parts by mass of the total solid content of the photosensitive resin composition from the viewpoint of sensitivity and residual film ratio. More preferably, it is 1 to 20 parts by mass, and most preferably 0.5 to 10 parts by mass.
  • a development accelerator may be used individually by 1 type, or may use 2 or more types together. When using 2 or more types together, it is preferable that a total amount is the said range.
  • the photosensitive resin composition of the present invention can contain an alkoxysilane compound.
  • an alkoxysilane compound a dialkoxysilane compound or a trialkoxysilane compound is preferable, and a trialkoxysilane compound is more preferable.
  • the alkoxy group contained in the alkoxysilane compound preferably has 1 to 5 carbon atoms.
  • the alkoxysilane compound is a compound that improves the adhesion between an insulating material and an inorganic material serving as a base material, for example, a silicon compound such as silicon, silicon oxide, or silicon nitride, or a metal such as gold, copper, molybdenum, titanium, or aluminum. It is preferable. Specifically, a known silane coupling agent or the like is also effective.
  • the photosensitive resin composition of the present invention is a known additive such as a plasticizer, a thermal radical generator, a thermal acid generator, a thermal radical generator, an ultraviolet absorber, a thickener, and an organic or inorganic precipitation inhibitor.
  • An agent can be added.
  • these compounds for example, the description of paragraph numbers 0201 to 0224 of JP2012-88459A can be referred to, and the contents thereof are incorporated in the present specification.
  • the photosensitive resin composition of the present invention can be prepared by mixing each component at a predetermined ratio and by any method, stirring and dissolving.
  • the photosensitive resin composition of the present invention can also be prepared by mixing each component with a predetermined ratio after preparing each solution in advance in a solvent.
  • the composition solution prepared as described above can be used after being filtered using, for example, a filter having a pore diameter of 0.2 ⁇ m.
  • the solid content concentration of the photosensitive resin composition of the present invention at 25 ° C. is preferably 1 to 60% by mass, more preferably 3 to 40% by mass, further preferably 5 to 30% by mass, and particularly preferably 5 to 17% by mass. preferable.
  • the viscosity is preferably 1 to 100 mPa ⁇ s, more preferably 2 to 60 mPa ⁇ s, and most preferably 3 to 40 mPa ⁇ s.
  • Viscosity can be measured, for example, using a viscometer RE85L (rotor: 1 ° 34 ′ ⁇ R24 measurement range 0.6 to 1200 mPa ⁇ s) manufactured by Toki Sangyo Co., Ltd., with the temperature adjusted to 25 ° C. .
  • the photosensitive resin composition of this invention can also be preserve
  • the method for producing a cured film of the present invention preferably includes the following steps (1) to (5).
  • substrate application
  • the substrate may be subjected to cleaning such as alkali cleaning or plasma cleaning. Further, the substrate surface may be treated with hexamethyldisilazane or the like with respect to the cleaned substrate.
  • the method of treating the substrate surface with hexamethyldisilazane is not particularly limited, and examples thereof include a method of exposing the substrate to hexamethyldisilazane vapor. Examples of the substrate include inorganic substrates, resins, and resin composite materials.
  • the inorganic substrate examples include glass, quartz, silicone, silicon nitride, and a composite substrate in which molybdenum, titanium, aluminum, copper, or the like is vapor-deposited on such a substrate.
  • the resins include polybutylene terephthalate, polyethylene terephthalate, polyethylene naphthalate, polybutylene naphthalate, polystyrene, polycarbonate, polysulfone, polyethersulfone, polyarylate, allyl diglycol carbonate, polyamide, polyimide, polyamideimide, polyetherimide, poly Fluorine resins such as benzazole, polyphenylene sulfide, polycycloolefin, norbornene resin, polychlorotrifluoroethylene, liquid crystal polymer, acrylic resin, epoxy resin, silicone resin, ionomer resin, cyanate resin, crosslinked fumaric acid diester, cyclic polyolefin, aromatic Made of synthetic resin such as aromatic ether, maleimide
  • the method for applying the photosensitive resin composition to the substrate is not particularly limited.
  • an inkjet method, a slit coating method, a spray method, a roll coating method, a spin coating method, a casting coating method, a slit and spin method, etc. Can be used.
  • the relative movement speed between the substrate and the slit die is preferably 50 to 120 mm / sec.
  • the wet film thickness when the photosensitive resin composition is applied is not particularly limited, and can be applied with a film thickness according to the application. For example, 0.5 to 10 ⁇ m is preferable.
  • pre-wet method as described in JP-A-2009-145395.
  • the solvent is removed from the wet film formed by applying the photosensitive resin composition by vacuum (vacuum) and / or heating to form a dry film on the substrate.
  • the heating conditions for the solvent removal step are preferably 70 to 130 ° C. and about 30 to 300 seconds. When the temperature and time are in the above ranges, the pattern adhesiveness is better and the residue tends to be further reduced.
  • the substrate provided with the dry film is irradiated with actinic rays having a predetermined pattern.
  • the photoacid generator is decomposed to generate an acid.
  • the acid-decomposable group contained in the coating film component is hydrolyzed to generate a carboxy group, a phenolic hydroxyl group, a silanol group, and the like.
  • a low-pressure mercury lamp, a high-pressure mercury lamp, an ultrahigh-pressure mercury lamp, a chemical lamp, an LED light source, an excimer laser generator, and the like can be used, i-line (365 nm), h-line (405 nm), g-line ( Actinic rays having a wavelength of 300 nm to 450 nm, such as 436 nm), can be preferably used.
  • irradiation light can also be adjusted through spectral filters, such as a long wavelength cut filter, a short wavelength cut filter, and a band pass filter, as needed.
  • the exposure amount is preferably 1 to 500 mJ / cm 2 .
  • various types of exposure machines such as a mirror projection aligner, a stepper, a scanner, a proximity, a contact, a microlens array, a lens scanner, and a laser exposure can be used.
  • exposure using so-called super-resolution technology can also be performed.
  • the super-resolution technique include multiple exposure in which exposure is performed a plurality of times, a method using a phase shift mask, a deformation proof method represented by an annular illumination method, and the like.
  • PEB Post Exposure Bake
  • the temperature for performing PEB is preferably 30 ° C. or higher and 130 ° C. or lower, more preferably 40 ° C. or higher and 110 ° C. or lower, and particularly preferably 50 ° C. or higher and 100 ° C. or lower.
  • a copolymer having a free carboxy group, a phenolic hydroxyl group, and a silanol group is developed using a developer to form a positive image.
  • the developer used in the development step preferably contains an aqueous solution of a basic compound.
  • Examples of basic compounds include alkali metal hydroxides such as lithium hydroxide, sodium hydroxide, and potassium hydroxide; alkali metal carbonates such as sodium carbonate, potassium carbonate, and cesium carbonate; sodium bicarbonate, potassium bicarbonate Alkali metal bicarbonates such as: tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, diethyldimethylammonium hydroxide, and other tetraalkylammonium hydroxides: Alkyl) trialkylammonium hydroxides; silicates such as sodium silicate and sodium metasilicate; ethylamine, propylamine, diethylamine, triethylammonium Alkylamines such as diamine; Alcoholamines such as dimethylethanolamine and triethanolamine; 1,8-diazabicyclo- [5.4.0] -7-unde
  • sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, and choline (2-hydroxyethyltrimethylammonium hydroxide) are preferable.
  • An aqueous solution obtained by adding an appropriate amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant to the alkaline aqueous solution can also be used as a developer.
  • the pH of the developer is preferably 10.0 to 14.0.
  • the development time is preferably 30 to 500 seconds, and the development method may be any of a liquid piling method (paddle method), a shower method, a dipping method, and the like.
  • a rinsing step can also be performed after development. In the rinsing step, the developed substrate and the development residue are removed by washing the developed substrate with pure water or the like.
  • a known method can be used as the rinsing method. For example, shower rinse and dip rinse can be mentioned.
  • the acid-decomposable group is thermally decomposed to generate a carboxy group, a phenolic hydroxyl group, and a silanol group, and crosslinked with a crosslinkable group, a crosslinking agent, and the like.
  • a cured film can be formed.
  • This heating is performed using a heating device such as a hot plate or an oven at a predetermined temperature, for example, 180 to 400 ° C. for a predetermined time, for example, 5 to 90 minutes on the hot plate, 30 to 120 minutes for the oven.
  • a protective film and an interlayer insulating film that are superior in heat resistance, hardness, and the like can be formed.
  • the transparency can be further improved.
  • post-baking can be performed after baking at a relatively low temperature (addition of a middle baking process).
  • middle baking it is preferable to post-bake at a high temperature of 200 ° C. or higher after heating at 90 to 180 ° C. for 1 to 60 minutes.
  • middle baking and post-baking can be heated in three or more stages. The taper angle of the pattern can be adjusted by devising such middle baking and post baking.
  • heating methods can use well-known heating methods, such as a hotplate, oven, and an infrared heater.
  • post-exposure the entire surface of the patterned substrate was re-exposed with actinic rays (post-exposure), and then post-baked to generate an acid from the photoacid generator present in the unexposed portion, thereby performing a crosslinking step. It can function as a catalyst to promote, and can accelerate the curing reaction of the film.
  • the preferred exposure amount in the case of including a post-exposure step preferably 100 ⁇ 3,000mJ / cm 2, particularly preferably 100 ⁇ 500mJ / cm 2.
  • the cured film obtained from the photosensitive resin composition of the present invention can also be used as a dry etching resist.
  • dry etching processes such as ashing, plasma etching, and ozone etching can be performed as the etching process.
  • the cured film of the present invention is a cured film obtained by curing the above-described photosensitive resin composition of the present invention. Moreover, it is preferable that the cured film of this invention is a cured film obtained by the formation method of the cured film of this invention mentioned above.
  • the cured film of the present invention can be suitably used as an interlayer insulating film. It is preferable to use at least a part of the cured film in contact with the metal part, and it can be particularly preferably used as an insulating substrate for metal wiring.
  • the photosensitive resin composition of the present invention can provide an interlayer insulating film having high transparency even when baked at a high temperature.
  • the interlayer insulation film formed using the photosensitive resin composition of the present invention has high transparency and is useful for applications such as a liquid crystal display device, an organic electroluminescence display device, and a touch panel.
  • the liquid crystal display device of the present invention has the cured film of the present invention.
  • the liquid crystal display device of the present invention is not particularly limited except that it has a planarizing film and an interlayer insulating film formed using the photosensitive resin composition of the present invention, and known liquid crystal display devices having various structures. Can be mentioned.
  • specific examples of the TFT included in the liquid crystal display device of the present invention include an amorphous silicon-TFT, a low-temperature polysilicon-TFT, an oxide semiconductor (for example, indium gallium zinc oxide) TFT, and the like. Since the cured film of the present invention is excellent in electrical characteristics, it can be preferably used in combination with these TFTs.
  • the liquid crystal driving methods that can be adopted by the liquid crystal display device of the present invention include TN (Twisted Nematic) method, VA (Virtual Alignment) method, IPS (In-Place-Switching) method, FFS (Frings Field Switching) method, OCB (Optical). Compensated Bend) method and the like.
  • the cured film of the present invention can also be used in a COA (Color Filter on Array) type liquid crystal display device.
  • the alignment method of the liquid crystal alignment film that the liquid crystal display device of the present invention can take include a rubbing alignment method and a photo alignment method.
  • the polymer orientation may be supported by a PSA (Polymer Sustained Alignment) technique described in JP-A Nos. 2003-149647 and 2011-257734.
  • the photosensitive resin composition of this invention and the cured film of this invention are not limited to the said use, It can be used for various uses.
  • a protective film for the color filter in addition to the planarization film and interlayer insulating film, a protective film for the color filter, a spacer for keeping the thickness of the liquid crystal layer in the liquid crystal display device constant, a microlens provided on the color filter in the solid-state imaging device, etc.
  • FIG. 1 is a conceptual cross-sectional view showing an example of an active matrix liquid crystal display device 10.
  • the liquid crystal display device 10 is a liquid crystal panel having a backlight unit 12 on the back surface, and the liquid crystal panel is disposed on all pixels disposed between two glass substrates 14 and 15 having a polarizing film attached thereto.
  • Corresponding TFT 16 elements are arranged.
  • Each element formed on the glass substrate is wired with an ITO transparent electrode 19 that forms a pixel electrode through a contact hole 18 formed in the cured film 17.
  • an RGB color filter 22 in which a liquid crystal 20 layer and a black matrix are arranged is provided.
  • the light source of the backlight is not particularly limited, and a known light source can be used.
  • the liquid crystal display device can be a 3D (stereoscopic) type or a touch panel type. Further, a flexible type can also be used.
  • the second interlayer insulating film (48) described in JP2011-145686A, the interlayer insulating film (520) described in JP2009-258758A, JP It can be used as an organic insulating film (PAS) described in FIG. 1 of 2007-328210.
  • PAS organic insulating film
  • the present invention can be applied as an insulating film of a polymer network type liquid crystal as described in JP-A-2001-125086.
  • reference numeral SUB1 denotes a glass substrate, which has a plurality of scanning signal lines and a plurality of video signal lines intersecting with the plurality of scanning signal lines.
  • a TFT is provided in the vicinity of each intersection.
  • a base film UC On the glass substrate SUB1, a base film UC, a semiconductor film PS such as silicon, a gate insulating film GI, a TFT gate electrode GT, and a first interlayer insulating film IN1 are formed in this order from the bottom.
  • a drain electrode SD1 of the TFT and a source electrode SD2 of the TFT are formed on the first interlayer insulating film IN1.
  • the drain electrode SD1 is connected to the drain region of the TFT through a contact hole formed in the gate insulating film GI and the first interlayer insulating film IN1.
  • the source electrode SD2 is connected to the source region of the TFT through a contact hole formed in the gate insulating film GI and the first interlayer insulating film IN1.
  • a second interlayer insulating film IN2 is formed on the drain electrode SD1 and the source electrode SD2.
  • An organic insulating film PAS is formed on the second interlayer insulating film IN2.
  • the organic insulating film PAS can be formed using the photosensitive resin composition of the present invention.
  • a counter electrode CT and a reflective film RAL are formed on the organic insulating film PAS.
  • a third interlayer insulating film IN3 is formed on the counter electrode CT and the reflective film RAL.
  • a pixel electrode PX is formed on the third interlayer insulating film IN3.
  • the pixel electrode PX is connected to the source electrode SD2 of the TFT through a contact hole formed in the second interlayer insulating film IN2 and the third interlayer insulating film IN3.
  • the organic insulating film PAS is formed using the photosensitive resin composition of the present invention, since the heat resistance of the organic insulating film PAS is excellent, the film forming temperature of the third interlayer insulating film IN3 is increased. And a denser film can be formed.
  • first interlayer insulating film IN1, the second interlayer insulating film IN2, and the third interlayer insulating film IN3 can also be formed using the photosensitive resin composition of the present invention.
  • the details of the liquid crystal display device shown in FIG. 2 can be referred to the description in Japanese Patent Application Laid-Open No. 2007-328210, and the contents thereof are incorporated in this specification.
  • the organic electroluminescence (organic EL) display device of the present invention has the cured film of the present invention.
  • the organic EL display device of the present invention is not particularly limited except that it has a flattening film and an interlayer insulating film formed using the photosensitive resin composition of the present invention, and various known organic materials having various structures.
  • An EL display device and a liquid crystal display device can be given.
  • specific examples of TFTs included in the organic EL display device of the present invention include amorphous silicon-TFT, low-temperature polysilicon-TFT, oxide semiconductor TFT, and the like. Since the cured film of the present invention is excellent in electrical characteristics, it can be preferably used in combination with these TFTs.
  • FIG. 3 is a conceptual diagram of a configuration of an example of an organic EL display device.
  • a schematic cross-sectional view of a substrate in a bottom emission type organic EL display device is shown, and a planarizing film 4 is provided.
  • a bottom gate type TFT 1 is formed on a glass substrate 6, and an insulating film 3 made of Si 3 N 4 is formed so as to cover the TFT 1.
  • a contact hole (not shown) is formed in the insulating film 3, and then a wiring 2 (height: 1.0 ⁇ m) connected to the TFT 1 through the contact hole is formed on the insulating film 3.
  • the wiring 2 is for connecting the TFT 1 with an organic EL element formed between the TFTs 1 or in a later process.
  • the flattening film 4 is formed on the insulating film 3 with the unevenness due to the wiring 2 being embedded.
  • a bottom emission type organic EL element is formed on the planarizing film 4. That is, the first electrode 5 made of ITO is formed on the planarizing film 4 so as to be connected to the wiring 2 through the contact hole 7.
  • the first electrode 5 corresponds to the anode of the organic EL element.
  • An insulating film 8 having a shape covering the periphery of the first electrode 5 is formed. By providing the insulating film 8, a short circuit between the first electrode 5 and the second electrode formed in the subsequent process is prevented. be able to. Further, although not shown in FIG.
  • a hole transport layer, an organic light emitting layer, and an electron transport layer are sequentially deposited through a desired pattern mask, and then a second layer made of Al is formed on the entire surface above the substrate.
  • An active matrix organic material in which two electrodes are formed and sealed by bonding using a sealing glass plate and an ultraviolet curable epoxy resin, and each organic EL element is connected to a TFT 1 for driving it.
  • An EL display device is obtained.
  • the photosensitive resin composition of the present invention Since the photosensitive resin composition of the present invention has good sensitivity and excellent pattern adhesion during development, it is formed using the photosensitive resin composition of the present invention as a structural member of a MEMS (Micro Electro Mechanical Systems) device.
  • the resist pattern thus formed is used as a partition wall or incorporated as a part of a mechanical drive component.
  • MEMS devices include parts such as SAW (Surface Acoustic Wave) filters, BAW (Bulk Acoustic Wave) filters, gyro sensors, micro shutters for displays, image sensors, electronic paper, inkjet heads, biochips, and sealants. It is done. More specific examples are exemplified in JP-T-2007-522531, JP-A-2008-250200, JP-A-2009-263544, and the like.
  • the photosensitive resin composition of the present invention is excellent in flatness and transparency, for example, the bank layer (16) and the planarization film (57) described in FIG. 2 of JP-A-2011-107476, JP-A-2010-
  • spacers for maintaining the thickness of the liquid crystal layer in liquid crystal display devices imaging optical systems for on-chip color filters such as facsimiles, electronic copying machines, solid-state image sensors, and micro lenses for optical fiber connectors are also used. It can be used suitably.
  • the touch panel of the present invention is a touch panel in which all or part of the insulating layer and / or protective layer is made of a cured product of the photosensitive resin composition of the present invention. Moreover, it is preferable that the touch panel of this invention has a transparent substrate, an electrode, an insulating layer, and / or a protective layer at least.
  • the touch panel display device of the present invention is preferably a touch panel display device having the touch panel of the present invention.
  • any of known methods such as a resistive film method, a capacitance method, an ultrasonic method, and an electromagnetic induction method may be used. Among these, the electrostatic capacity method is preferable.
  • Examples of the capacitive touch panel include those disclosed in JP 2010-28115 A and those disclosed in International Publication No. 2012/057165.
  • a touch panel display device As a touch panel display device, a so-called in-cell type (for example, FIG. 5, FIG. 6, FIG. 7 and FIG. 8 of JP-A-2012-517051), a so-called on-cell type (for example, FIG. 19 of JP2013-168125A). , OGS type, TOL type, and other configurations (for example, FIG. 6 of Japanese Patent Application Laid-Open No. 2013-164877).
  • the capacitive touch panel has at least a front plate and a non-contact side of the front plate.
  • the insulating layer (4) is preferably a cured film using the photosensitive resin composition of the present invention.
  • Frame layer (2) A plurality of first transparent electrode patterns formed by extending a plurality of pad portions in a first direction via connection portions (3) First transparent electrode pattern and electrical And a plurality of second transparent electrode patterns comprising a plurality of pad portions formed extending in a direction crossing the first direction.
  • First transparent electrode pattern and second transparent electrode pattern (5) The first transparent electrode pattern and the second transparent electrode pattern are electrically connected to at least one of the first transparent electrode pattern and the second transparent electrode pattern.
  • a transparent protective layer is further provided so as to cover all or a part of the elements (1) to (5).
  • the cured film of the present invention is more preferable. There.
  • FIG. 4 is a cross-sectional view illustrating a configuration example of a capacitive touch panel.
  • the capacitive touch panel 30 includes a front plate 31, a frame layer 32, a first transparent electrode pattern 33, a second transparent electrode pattern 34, an insulating layer 35, and a conductive element 36. And a transparent protective layer 37.
  • the front plate 31 is made of a transparent substrate such as a glass substrate, and tempered glass represented by gorilla glass manufactured by Corning Inc. can be used.
  • a transparent substrate such as a glass substrate, and tempered glass represented by gorilla glass manufactured by Corning Inc.
  • a transparent substrate a glass substrate, a quartz substrate, a transparent resin substrate, etc. are mentioned preferably.
  • the side in which each element of the front plate 31 is provided is called a non-contact surface.
  • input is performed by bringing a finger or the like into contact with the contact surface of the front plate 31 (the surface opposite to the non-contact surface).
  • the front plate may be referred to as a “base material”.
  • a frame layer 32 is provided on the non-contact surface of the front plate 31.
  • the frame layer 32 is a frame-like pattern around the display area formed on the non-contact side of the front panel of the touch panel, and is formed so as not to show the lead wiring and the like.
  • the capacitive touch panel may be provided with a frame layer 32 so as to cover a part of the front plate 31 (a region other than the input surface in FIG. 5).
  • the front plate 31 can be provided with an opening 38 in part as shown in FIG. A mechanical switch by pressing can be installed in the opening 38.
  • a plurality of first transparent electrode patterns 33 formed with a plurality of pad portions extending in the first direction via the connection portions, A plurality of second transparent electrode patterns consisting of a plurality of pad portions that are electrically insulated from the first transparent electrode pattern 33 and extend in a direction crossing the first direction; An insulating layer 35 that electrically insulates the transparent electrode pattern 33 and the second transparent electrode pattern 34 is formed.
  • the 1st transparent electrode pattern 33, the 2nd transparent electrode pattern 34, and the electroconductive element 36 mentioned later can be produced with a metal film, for example.
  • the film thickness of each element can be 10 to 200 nm.
  • the amorphous ITO film can be crystallized into a polycrystalline ITO film by firing, and the electrical resistance can be reduced.
  • the 1st transparent electrode pattern 33, the 2nd transparent electrode pattern 34, and the electroconductive element 36 mentioned later are manufactured using the photosensitive transfer material which has the photosensitive resin composition using a conductive fiber. You can also In addition, when the first conductive pattern or the like is formed of ITO or the like, paragraphs 0014 to 0016 of Japanese Patent No. 4506785 can be referred to, and the contents thereof are incorporated in this specification.
  • At least one of the first transparent electrode pattern 33 and the second transparent electrode pattern 34 extends over both the non-contact surface of the front plate 31 and the region of the frame layer 32 opposite to the front plate 31. Can be installed.
  • FIG. 4 a diagram is shown in which the second transparent electrode pattern is installed across both areas of the non-contact surface of the front plate 31 and the surface opposite to the front plate 31 of the frame layer 32. Yes.
  • FIG. 6 is an explanatory diagram showing an example of the first transparent electrode pattern and the second transparent electrode pattern.
  • the first transparent electrode pattern 33 is formed such that the pad portion 33a extends in the first direction via the connection portion 33b.
  • the second transparent electrode pattern 34 is electrically insulated by the first transparent electrode pattern 33 and the insulating layer 35, and extends in a direction intersecting the first direction (second direction in FIG. 6). It is constituted by a plurality of pad portions that are formed.
  • the pad portion 33a and the connection portion 33b may be manufactured integrally, or only the connection portion 33b is manufactured, and the pad portion 33a and the second transparent electrode pattern 33 are formed.
  • the electrode pattern 34 may be integrally formed (patterned).
  • the pad portion 33a and the second transparent electrode pattern 34 are integrally formed (patterned), as shown in FIG. 6, a part of the connection part 33b and a part of the pad part 33a are connected and an insulating layer is formed. Each layer is formed so that the first transparent electrode pattern 33 and the second transparent electrode pattern 34 are electrically insulated by 35.
  • a conductive element 36 is installed on the surface side of the frame layer 32 opposite to the front plate 31.
  • the conductive element 36 is electrically connected to at least one of the first transparent electrode pattern 33 and the second transparent electrode pattern 34, and is different from the first transparent electrode pattern 33 and the second transparent electrode pattern 34. Is another element.
  • FIG. 4 a view in which the conductive element 36 is connected to the second transparent electrode pattern 34 is shown.
  • the transparent protective layer 37 is installed so that all of each component may be covered.
  • the transparent protective layer 37 may be configured to cover only a part of each component.
  • the insulating layer 35 and the transparent protective layer 37 may be made of the same material or different materials.
  • the touch panel display device including the capacitive touch panel and the capacitive touch panel as a constituent element is “Latest Touch Panel Technology” (Techno Times, issued July 6, 2009), supervised by Yuji Mitani, “Touch Panel The configurations disclosed in “Technology and Development” CMC Publishing (2004, 12), “FPD International 2009 Forum T-11 Lecture Textbook”, “Cypress Semiconductor Corporation Application Note AN2292” and the like can be applied.
  • the touch panel of the present invention can be manufactured, for example, as follows. That is, the photosensitive resin composition of the present invention is applied by various methods such as an inkjet coating method so as to be in contact with the ITO electrode, and an opening pattern having a predetermined shape is formed on the photosensitive resin composition applied to the ITO electrode. It can be manufactured through Step 2 in which a mask is placed and exposed by irradiation with active energy rays, Step 3 in which the exposed photosensitive resin composition is developed, and Step 4 in which the photosensitive resin composition after development is heated. .
  • Step 1 when the photosensitive resin composition is applied so as to be in contact with the ITO electrode, it is sufficient that at least a part of the applied photosensitive resin composition of the present invention is in contact with the ITO electrode.
  • Step 2 can be performed in the same manner as the exposure step described above, and the preferred embodiment is also the same.
  • Step 3 can be performed in the same manner as the development step described above, and the preferred embodiment is also the same.
  • Step 4 can be performed in the same manner as the post-baking step described above, and the preferred embodiment is also the same.
  • the ITO electrode pattern in the touch panel of this invention the pattern shown in FIG. 6 mentioned above is mentioned preferably.
  • NMR is an abbreviation for nuclear magnetic resonance.
  • A1-1 precursor polymer in which the carboxyl group of A1-1 was not protected with tetrahydrofuranyl.
  • 100 g of the resulting A1-1 precursor was dissolved in 400 mL of tetrahydrofuran, and after adding a catalytic amount of p-toluenesulfonic acid, a solution in which 30 g of dihydrofuran was dissolved in 30 g of tetrahydrofuran was added dropwise with stirring at 20 ° C. .
  • A1-1 was a polysiloxane having a carboxy group, a carboxy group, an epoxy group, a methyl group, and a phenyl group protected by a tetrahydrofuranyl group in the side chain. Analysis by 1H-NMR revealed that 78 mol% of the carboxy group was tetrahydrofuranylated in A1-1.
  • the types and molar ratios of the silane compounds used for the synthesis of A1-1 are shown below.
  • the three-necked flask was immersed in an oil bath at 40 ° C. and stirred for 30 minutes, and then reacted at 60 ° C. for 5 hours. During the reaction, methanol as a by-product was distilled off. The obtained polysiloxane DAA solution was poured into a large amount of water to precipitate a polymer, filtered and dried to obtain an A1-2 precursor.
  • A1-2 precursor 100 g of the obtained A1-2 precursor was dissolved in 400 mL of tetrahydrofuran, and after adding a catalytic amount of p-toluenesulfonic acid, a solution of 30 g of ethyl vinyl ether dissolved in 30 g of tetrahydrofuran was added dropwise with stirring at 20 ° C. . After reacting for 30 minutes, the reaction solution was neutralized with concentrated aqueous ammonia and neutralized with 5 L of water, and a white solid was obtained. This was filtered, dissolved in 300 ml of acetone, dropped into 5 L of water, filtered and dried to obtain A1-2. The weight average molecular weight in terms of polystyrene by GPC was 5000.
  • the resulting polysiloxane solution 80.4 g was solvent-substituted from an ethyl acetate solution to a tetrahydrofuran solution (solid content concentration 20% by mass), and then charged into a three-necked flask. Added. Next, 19.4 g (0.23 mol) of ethyl-1-propenyl ether was added dropwise while keeping the internal temperature at 10 ° C. or less with a dropping funnel while cooling with ice at 10 ° C. or lower and stirring. After dropping, the mixture was reacted at room temperature for 2 hours, and then 1.0 g (0.01 mol) of triethylamine was added to complete the reaction.
  • the reaction solution was transferred to a 1 L eggplant flask, tetrahydrofuran was distilled off with a rotary evaporator under reduced pressure at room temperature, 300 g of methyl isobutyl ketone and 250 ml of 0.01N acetic acid aqueous solution were added, and the reaction solution was washed with water. After repeating this washing operation three times in total, the organic layer was separated and concentrated by a rotary evaporator to obtain 49.0 g of polysiloxane A1-3 in which a colorless and transparent silanol group was acetal protected. The acetal substitution rate of polysiloxane A1-3 was calculated to be 32.5 mol% from the NMR results.
  • the weight average molecular weight of this polysiloxane in terms of polystyrene by GPC was 3800.
  • the resulting polysiloxane (82.6 g) was solvent-substituted from an ethyl acetate solution to a tetrahydrofuran solution (siloxane concentration: 20% by mass), then charged into a three-necked flask, and 1.0 g (0.01 mol) of methanesulfonic acid was added. .
  • 23.6 g (0.28 mol) of 3,4-dihydro-2H-pyran was added dropwise while keeping the internal temperature at 10 ° C. or less with a dropping funnel while cooling with ice at 10 ° C. or lower and stirring.
  • A2-4 synthesis Synthesis of polysiloxane having carboxy group protected with acid-decomposable group Using silane compound in the following compounds and molar ratio, changing the protecting group to ethoxyethyl group to adjust the amount Except that, A2-4 was synthesized in the same manner as A1-1 by mixing and reacting the following silane compounds and introducing a protecting group by polymer reaction. In analysis by 1 H-NMR, it was confirmed that A2-4 was ethoxyethylated in 85 mol% of the carboxy group.
  • B-1 PAG-103 (trade name, structure shown below, manufactured by BASF)
  • B-1 is a photoacid generator that generates an acid having a pKa of 3 or less.
  • B-2 PAI101 (trade name, structure shown below, manufactured by Midori Chemical Co., Ltd.)
  • B-2 is a photoacid generator that generates an acid having a pKa of 3 or less.
  • B-3 DTS-105 (trade name, triarylsulfonium salt, manufactured by Midori Chemical Co., Ltd.)
  • B-3 is a photoacid generator that generates an acid having a pKa of 3 or less.
  • B-4 Structure shown below (synthesized according to the method described in paragraph 249 of WO2011 / 087011 pamphlet)
  • B-4 is a photoacid generator that generates an acid having a pKa of 3 or less.
  • B-5 GSID-26-1 (trade name, triarylsulfonium salt, structure shown below, manufactured by BASF)
  • B-5 is a photoacid generator that generates an acid having a pKa of 3 or less.
  • B-6 4,7-di-n-butoxy-1-naphthyltetrahydrothiophenium trifluoromethanesulfonate
  • B-6 is a photoacid generator that generates an acid having a pKa of 3 or less.
  • B-7 Structure shown below
  • B-7 is a photoacid generator that generates an acid having a pKa of 3 or less.
  • B′-1 (Structure shown below. Quinonediazide compound)
  • B′-1 is a compound that generates an acid having a pKa of more than 3.
  • a glass substrate having a size of 680 mm ⁇ 880 mm (EAGLE XG, 0.7 mm thickness (manufactured by Corning)) was exposed to hexamethyldisilazane vapor for 30 seconds, and each photosensitive resin composition was slit-coated, followed by 90 ° C./120 Pre-baked on a second hot plate to volatilize the solvent to form a photosensitive resin composition layer having a thickness of 3.0 ⁇ m.
  • the obtained photosensitive resin composition layer was exposed with a mask pattern having a hole shape of 8 ⁇ m in diameter using MPA 5500CF manufactured by Canon Inc.
  • the exposed photosensitive resin composition layer was developed with an alkali developer (0.6% tetramethylammonium hydroxide aqueous solution) at 23 ° C./60 seconds, and then rinsed with ultrapure water for 20 seconds.
  • an alkali developer (0.6% tetramethylammonium hydroxide aqueous solution) at 23 ° C./60 seconds, and then rinsed with ultrapure water for 20 seconds.
  • the optimum i-line exposure amount (Eopt) when resolving a hole having a diameter of 8 ⁇ m was determined and used as the sensitivity. Evaluation is based on the following criteria, and 1, 2 and 3 are practical levels.
  • HAST CAHMBER EHS-221MD (trade name)” manufactured by ESPEC CORP.
  • HAST CAHMBER EHS-221MD (trade name)” manufactured by ESPEC CORP.
  • the degree of copper discoloration was evaluated. 1, 2 and 3 are practical levels. 1: Discoloration is not seen in the copper under the cured film before and after the test. 2: Less than 1% of the substrate area was discolored before and after the test. 3: 1% or more and less than 5% of the substrate area was discolored before and after the test. 4: Before and after the test, 5% or more and less than 10% of the substrate area was discolored. 5: 10% or more of the substrate area is discolored before and after the test.
  • the photosensitive resin composition of an Example was excellent in the sensitivity. Moreover, it was excellent in heat-and-moisture resistance, and the metal discoloration could be suppressed. Moreover, the cured film formed with the photosensitive resin composition of an Example had favorable heat resistance with respect to 300 degreeC. On the other hand, the photosensitive resin composition of the comparative example was inferior in either sensitivity or wet heat resistance.
  • Example 100 ⁇ Production of liquid crystal display device> (Example 100)
  • a cured film 17 was formed as an interlayer insulating film as follows, and a liquid crystal display device of Example 100 was obtained. That is, using the photosensitive resin composition of Example 1, a cured film 17 was formed as an interlayer insulating film.
  • the substrate is exposed to hexamethyldisilazane (HMDS) vapor for 30 seconds, and then the photosensitive resin of Example 1 is used.
  • HMDS hexamethyldisilazane
  • the obtained photosensitive resin composition layer is 40 mJ / cm 2 (energy intensity: 20 mW / cm 2 ) through a hole pattern mask of 10 ⁇ m ⁇ using MPA 5500CF (high pressure mercury lamp) manufactured by Canon Inc. , I-line).
  • MPA 5500CF high pressure mercury lamp
  • Example 101 In the liquid crystal display device described in FIG. 1 of JP-A-2007-328210, the organic insulating film PAS was formed by the following method to obtain a liquid crystal display device. First, according to Japanese Patent Application Laid-Open No. 2007-328210, an array substrate formed up to just before the organic insulating film PAS was produced. Next, this substrate was exposed to hexamethyldisilazane vapor for 30 seconds, and then the photosensitive resin composition of Example 1 was slit-coated and then pre-baked on a hot plate at 90 ° C. for 2 minutes to volatilize the solvent. A photosensitive resin composition layer was formed.
  • the obtained photosensitive resin composition layer was subjected to an optimum exposure dose mJ / cm 2 (energy intensity: 20 mW / cm 2) through a hole pattern mask of 8 ⁇ m ⁇ using MPA 7800CF manufactured by Canon Inc. i-line) exposure.
  • the exposed photosensitive resin composition layer was developed with an alkali developer (0.6% tetramethylammonium hydroxide aqueous solution) at 23 ° C./60 seconds, and then rinsed with ultrapure water for 20 seconds.
  • the whole surface was exposed using an ultra-high pressure mercury lamp so that the integrated irradiation amount was 300 mJ / cm 2 (energy intensity: 20 mW / cm 2 , measured by i-line), and then the substrate was heated at 280 ° C. in an oven at 30 ° C.
  • the organic insulating film PAS was obtained by heating for a few minutes.
  • a liquid crystal display device was obtained according to Japanese Patent Application Laid-Open No. 2007-328210.
  • the interlayer insulating film IN3 is formed at the same temperature as the interlayer insulating film IN2. Thereby, IN3 could be made into a dense film.
  • a driving voltage was applied to the obtained liquid crystal display device, it was found that the liquid crystal display device showed very good display characteristics and had high reliability.
  • Example 201 An organic EL display device using a thin film transistor (TFT) was produced by the following method (see FIG. 2).
  • a bottom gate type TFT 1 was formed on a glass substrate 6, and an insulating film 3 made of Si 3 N 4 was formed so as to cover the TFT 1.
  • a contact hole (not shown) is formed in the insulating film 3, and then a wiring 2 (height 1.0 ⁇ m) connected to the TFT 1 through the contact hole is formed on the insulating film 3. .
  • the wiring 2 is used to connect the TFT 1 with an organic EL element formed between TFTs 1 or in a later process.
  • the planarizing film 4 was formed on the insulating film 3 in a state where the unevenness due to the wiring 2 was embedded.
  • the planarizing film 4 is formed on the insulating film 3 by spin-coating the photosensitive resin composition of Example 1 on a substrate, pre-baking (90 ° C./120 seconds) on a hot plate, and then applying high pressure from above the mask. After irradiation with i-line (365 nm) at 45 mJ / cm 2 (energy intensity 20 mW / cm 2 ) using a mercury lamp, development is performed with an alkaline aqueous solution (0.4% TMAH aqueous solution) to form a pattern.
  • the integrated dose was 300 mJ / cm 2 (energy intensity: 20 mW / cm 2 , i-line), and a heat treatment was performed at 230 ° C./30 minutes.
  • the applicability when applying the photosensitive resin composition was good, and no wrinkles or cracks were observed in the cured film obtained after exposure, development and baking.
  • the average step of the wiring 2 was 500 nm, and the thickness of the prepared planarizing film 4 was 2,000 nm.
  • a bottom emission type organic EL element was formed on the obtained flattening film 4.
  • a first electrode 5 made of ITO was formed on the planarizing film 4 so as to be connected to the wiring 2 through the contact hole 7.
  • a resist was applied, prebaked, exposed through a mask having a desired pattern, and developed.
  • pattern processing was performed by wet etching using an ITO etchant.
  • the resist pattern was stripped at 50 ° C. using a resist stripper (remover 100, manufactured by AZ Electronic Materials).
  • the first electrode 5 thus obtained corresponds to the anode of the organic EL element.
  • an insulating film 8 having a shape covering the periphery of the first electrode 5 was formed.
  • the photosensitive resin composition of Example 16 was used, and the insulating film 8 was formed by the same method as described above. By providing this insulating film 8, it is possible to prevent a short circuit between the first electrode 5 and the second electrode formed in the subsequent process.
  • a hole transport layer, an organic light emitting layer, and an electron transport layer were sequentially deposited through a desired pattern mask in a vacuum deposition apparatus.
  • a second electrode made of Al was formed on the entire surface above the substrate.
  • substrate was taken out from the vapor deposition machine, and it sealed by bonding together using the glass plate for sealing, and an ultraviolet curable epoxy resin.
  • a touch panel was produced by the method described below.
  • etching resist was applied onto ITO and dried to form an etching resist layer.
  • the distance between the exposure mask (quartz exposure mask having a transparent electrode pattern) surface and the etching resist layer is set to 100 ⁇ m, pattern exposure is performed at an exposure amount of 50 mJ / cm 2 (i-line), and development is performed with a developer.
  • a post-baking treatment at 130 ° C. for 30 minutes was performed to obtain a front plate on which a transparent electrode layer and a photosensitive resin layer pattern for etching were formed.
  • the front plate on which the transparent electrode layer and the photo-sensitive resin layer pattern for etching are formed is immersed in an etching tank containing ITO etchant (hydrochloric acid, potassium chloride aqueous solution, liquid temperature 30 ° C.), treated for 100 seconds, and etched resist.
  • ITO etchant hydroochloric acid, potassium chloride aqueous solution, liquid temperature 30 ° C.
  • the exposed transparent electrode layer not covered with the layer was dissolved and removed to obtain a front plate with a transparent electrode layer pattern with an etching resist layer pattern.
  • the transparent electrode layer-patterned front plate with the etching resist layer pattern is immersed in a dedicated resist stripping solution, the etching photosensitive resin layer is removed, and the frame layer and the first transparent electrode pattern A front plate formed was obtained.
  • the photosensitive resin composition of Example 1 was applied and dried (film thickness: 1 ⁇ m, 90 ° C., 120 seconds) to form a photosensitive resin composition layer.
  • the distance between the surface of the exposure mask (quartz exposure mask having a pattern for insulating layer) and the photosensitive resin composition layer was set to 30 ⁇ m, and pattern exposure was performed with the optimum exposure amount obtained by sensitivity evaluation.
  • the film was developed with a 2.38 mass% tetramethylammonium hydroxide aqueous solution at 23 ° C. for 15 seconds and rinsed with ultrapure water for 10 seconds.
  • a post-baking process at 220 ° C. for 45 minutes was performed to obtain a front plate on which a frame layer, a first transparent electrode pattern, and an insulating layer pattern were formed.
  • the front plate formed up to the insulating layer pattern was subjected to DC magnetron sputtering treatment (conditions: substrate temperature 50 ° C., argon pressure 0.13 Pa, oxygen pressure 0.01 Pa).
  • An ITO thin film having a thickness of 80 nm was formed to obtain a front plate on which a transparent electrode layer was formed.
  • the surface resistance of the ITO thin film was 110 ⁇ / ⁇ .
  • etching was performed and the etching resist layer was removed to form the frame layer, the first transparent electrode pattern, and the photosensitive resin composition of Example 1.
  • a front plate on which an insulating layer pattern and a second transparent electrode pattern were formed was obtained.
  • the photosensitive resin composition of Example 1 was applied and dried (film thickness: 1 ⁇ m) on the front plate formed up to the conductive element different from the first and second transparent electrode patterns. , 90 ° C. for 120 seconds) to obtain a photosensitive resin composition film. Further, exposure, heat treatment, development, post-exposure (1,000 mJ / cm 2 ), and post-bake treatment are performed to form the frame layer, the first transparent electrode pattern, and the photosensitive resin composition of Example 1. Insulating layer pattern, second transparent electrode pattern, insulating layer formed using the photosensitive resin composition of Example 1 so as to cover all the conductive elements different from the first and second transparent electrode patterns A front plate laminated with a (transparent protective layer) was obtained.
  • a liquid crystal display device manufactured by the method described in Japanese Patent Application Laid-Open No. 2009-47936 was bonded to the previously manufactured front plate, and a touch panel including a capacitive touch panel as a constituent element was manufactured by a known method.

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Abstract

Provided is a photosensitive resin composition exhibiting favorable sensitivity and unlikely to cause metal discoloration. Further provided are a method for producing a cured film using the photosensitive resin composition, a cured film, a liquid crystal display device, an organic electroluminescent display device, and a touch panel. This photosensitive resin composition contains a polysiloxane component, a photoacid generator for generating an acid having a pKa of 3 or less, a solvent, and a block isocyanate compound. It is preferable for the content of the block isocyanate compound to be 0.1-15 mass% of the total solid content of the photosensitive resin composition.

Description

感光性樹脂組成物、硬化膜の製造方法、硬化膜、液晶表示装置、有機エレクトロルミネッセンス表示装置およびタッチパネルPhotosensitive resin composition, method for producing cured film, cured film, liquid crystal display device, organic electroluminescence display device, and touch panel
 本発明は、感光性樹脂組成物に関する。さらに詳しくは、液晶表示装置、有機エレクトロルミネッセンス表示装置、タッチパネル、集積回路素子、固体撮像素子などの電子部品の平坦化膜、保護膜および層間絶縁膜等の形成に好適な、感光性樹脂組成物に関する。また、硬化膜の製造方法、感光性樹脂組成物を硬化してなる硬化膜、硬化膜を用いた液晶表示装置、有機エレクトロルミネッセンス表示装置などの画像表示装置、およびタッチパネルなどの入力装置に関する。 The present invention relates to a photosensitive resin composition. More specifically, a photosensitive resin composition suitable for forming a flattening film, a protective film, an interlayer insulating film, and the like of electronic components such as a liquid crystal display device, an organic electroluminescence display device, a touch panel, an integrated circuit element, and a solid-state imaging element About. The present invention also relates to a method for producing a cured film, a cured film obtained by curing a photosensitive resin composition, a liquid crystal display device using the cured film, an image display device such as an organic electroluminescence display device, and an input device such as a touch panel.
 有機エレクトロルミネッセンス表示装置、液晶表示装置などの画像表示装置、タッチパネルなどの入力装置などには、パターン形成された層間絶縁膜が設けられている。層間絶縁膜の形成には、必要とするパターン形状を得るための工程数が少なく、しかも十分な平坦性が得られるといったことから、感光性樹脂組成物が広く使用されている。感光性樹脂組成物の特性としては、感度が良いことが求められている。 An image display device such as an organic electroluminescence display device and a liquid crystal display device, and an input device such as a touch panel are provided with a patterned interlayer insulating film. In forming an interlayer insulating film, a photosensitive resin composition is widely used because the number of steps for obtaining a required pattern shape is small and sufficient flatness is obtained. As a characteristic of the photosensitive resin composition, good sensitivity is required.
 最近、製造の効率化や表示装置の高性能化のために、層間絶縁膜製造後の装置作製工程において、従来よりも高い温度(例えば300℃程度)での熱処理や製膜がなされており、層間絶縁膜にも従来よりも高い温度に対する耐性が求められている。このような高耐熱性の層間絶縁膜として、ポリシロキサンを用いることが検討されている。 Recently, heat treatment and film formation at higher temperatures (for example, about 300 ° C.) have been performed in the device manufacturing process after manufacturing the interlayer insulating film in order to improve manufacturing efficiency and display device performance. The interlayer insulating film is also required to have higher temperature resistance than before. The use of polysiloxane as such a high heat resistant interlayer insulating film has been studied.
 特許文献1には、アルカリ可溶性シロキサン重合体と、1,2-ナフトキノンジアド基を有する感光性化合物とを含有する感光性樹脂組成物が開示されている。
 特許文献2には、(A)成分として、酸分解性基で保護されたカルボン酸を有する構成単位を含むポリシロキサン、(B)成分として、光酸発生剤、(C)成分として有機溶剤、(D)成分としてエポキシ基含有シロキサン化合物を含有する感光性樹脂組成物が開示されている。
 特許文献3には、保護されたシラノール基を有する構成単位と、エポキシ基を有する構成単位とを含むポリシロキサンを含有する感光性樹脂組成物が開示されている。
Patent Document 1 discloses a photosensitive resin composition containing an alkali-soluble siloxane polymer and a photosensitive compound having a 1,2-naphthoquinone diad group.
In Patent Document 2, polysiloxane containing a structural unit having a carboxylic acid protected with an acid-decomposable group as component (A), a photoacid generator as component (B), an organic solvent as component (C), A photosensitive resin composition containing an epoxy group-containing siloxane compound as component (D) is disclosed.
Patent Document 3 discloses a photosensitive resin composition containing polysiloxane containing a structural unit having a protected silanol group and a structural unit having an epoxy group.
 一方、特許文献4~6には、アクリル樹脂と、光酸発生剤と、ブロックイソシアネート化合物とを含む感光性樹脂組成物が開示されている。 On the other hand, Patent Documents 4 to 6 disclose photosensitive resin compositions containing an acrylic resin, a photoacid generator, and a blocked isocyanate compound.
特開2003-255546号公報JP 2003-255546 A 特開2013-92633号公報JP 2013-92633 A 特開2009-263522号公報JP 2009-263522 A 特開2013-242511号公報JP 2013-2425111 A 国際公開2013/161861号パンフレットInternational publication 2013/161861 pamphlet 国際公開2013/161862号パンフレットInternational Publication 2013/161862 Pamphlet
 しかしながら、本発明者らが、特許文献1に開示された感光性樹脂組成物について検討したところ、感度が充分ではないことが分かった。
 また、特許文献2、3に開示された感光性樹脂組成物は、感度は優れるものの、金属を変色しやすいことが分かった。
 また、ポリシロキサンは、ポリシロキサン合成の際に重縮合時に水を生成するため、ポリシロキサンを用いた感光性樹脂組成物を用いて膜を形成すると、得られる膜の含水率が高く、金属を変色しやすい傾向にあることが分かった。
However, when the present inventors examined the photosensitive resin composition disclosed in Patent Document 1, it was found that the sensitivity was not sufficient.
Moreover, although the photosensitive resin composition disclosed by patent document 2, 3 was excellent in the sensitivity, it turned out that it is easy to discolor a metal.
In addition, since polysiloxane generates water during polycondensation during polysiloxane synthesis, when a film is formed using a photosensitive resin composition using polysiloxane, the resulting film has a high moisture content, and metal is formed. It turned out that it tends to discolor easily.
 一方、特許文献4~6には、アクリル樹脂を用いた感光性樹脂組成物において、ブロックイソシアネート化合物を含有させることで、耐熱性、耐薬品性、基材密着性などが向上することが記載されているが、金属の変色抑制に関する記載はない。また、アクリル樹脂は、樹脂合成の際の重縮合時に水が生成されないので、アクリル樹脂を用いた感光性樹脂組成物を用いて膜を形成すると、膜中に水が取り込まれにくく、金属の変色はそもそも問題とされていなかった。 On the other hand, Patent Documents 4 to 6 describe that a photosensitive resin composition using an acrylic resin improves heat resistance, chemical resistance, substrate adhesion, and the like by containing a blocked isocyanate compound. However, there is no description regarding suppression of discoloration of metals. In addition, since acrylic resin does not generate water during polycondensation during resin synthesis, forming a film using a photosensitive resin composition using an acrylic resin makes it difficult for water to be taken into the film, resulting in discoloration of the metal. It was not a problem in the first place.
 よって、本発明の目的は、感度が良好で、ポリシロキサンを用いても、金属を変色し難い感光性樹脂組成物を提供することにある。また、感光性樹脂組成物を用いた硬化膜の製造方法、硬化膜、液晶表示装置、有機エレクトロルミネッセンス表示装置およびタッチパネルを提供することにある。 Therefore, an object of the present invention is to provide a photosensitive resin composition which has good sensitivity and hardly discolors a metal even when polysiloxane is used. Moreover, it is providing the manufacturing method of a cured film using the photosensitive resin composition, a cured film, a liquid crystal display device, an organic electroluminescent display device, and a touch panel.
 かかる状況のもと、本発明者らが検討を行った結果、ポリシロキサン成分と、pKaが3以下の酸を発生する光酸発生剤と、溶剤と、ブロックイソシアネート化合物とを含む感光性樹脂組成物により、感度および耐熱性が良好で、金属を変色しにくい感光性樹脂組成物が得られることを見出し、本発明を完成するに至った。本発明は以下を提供する。 Under such circumstances, as a result of investigations by the present inventors, a photosensitive resin composition comprising a polysiloxane component, a photoacid generator that generates an acid having a pKa of 3 or less, a solvent, and a blocked isocyanate compound. It has been found that a photosensitive resin composition having good sensitivity and heat resistance and hardly discoloring a metal can be obtained, and the present invention has been completed. The present invention provides the following.
 <1> 成分Aとして、下記1および2の少なくとも一方を満たすポリシロキサン成分、
 1:構成単位a1として、カルボキシ基が酸分解性基で保護された基、フェノール性水酸基が酸分解性基で保護された基、および、シラノール基が酸分解性基で保護された基から選ばれる少なくとも1種の基を有する構成単位と、構成単位a2として、架橋性基を有する構成単位とを有するポリシロキサンを含むポリシロキサン成分、
 2:構成単位a1として、カルボキシ基が酸分解性基で保護された基、フェノール性水酸基が酸分解性基で保護された基、および、シラノール基が酸分解性基で保護された基から選ばれる少なくとも1種の基を有する構成単位を有するポリシロキサンと、構成単位a2として、架橋性基を有する構成単位を有するポリシロキサンとを含むポリシロキサン成分、
 成分Bとして、pKaが3以下の酸を発生する光酸発生剤、
 成分Cとして、溶剤、ならびに、
 成分Sとして、ブロックイソシアネート化合物を含有する感光性樹脂組成物。
<2> 感光性樹脂組成物の全固形分に対して、ブロックイソシアネート化合物を、0.1~15質量%含有する、<1>に記載の感光性樹脂組成物。
<3> ブロックイソシアネート化合物は、トリレンジイソシアネート、ジフェニルメタンジイソシアネート、ヘキサメチレンジイソシアネートおよびイソホロンジイソシアネートから選ばれるイソシアネート化合物、ならびに、イソシアネート化合物の多量体から選ばれる少なくとも1種の化合物のイソシアネート基を保護したものである、<1>または<2>に記載の感光性樹脂組成物。
<4> ブロックイソシアネート化合物は、オキシム化合物、ラクタム化合物、フェノール化合物、アルコール化合物、アミン化合物、活性メチレン化合物、および、ピラゾール化合物から選ばれる化合物により、イソシアネート基が保護されてブロック構造が形成された化合物である、<1>~<3>のいずれかに記載の感光性樹脂組成物。
<5> ブロックイソシアネート化合物の分子量が100~2000である、<1>~<4>のいずれかに記載の感光性樹脂組成物。
<6> ポリシロキサン成分が有する酸分解性基は、アセタール基である<1>~<5>のいずれかに記載の感光性樹脂組成物。
<7> 構成単位a1が、下記一般式a1-1で表される構成単位、および、下記一般式a1-2で表される構成単位から選ばれる少なくとも1種である、<1>~<6>のいずれかに記載の感光性樹脂組成物;
Figure JPOXMLDOC01-appb-C000002
 一般式a1-1、および、一般式a1-2中、aは0または1を表し、
 RおよびRは、それぞれ独立に、水素原子、アルキル基またはアリール基を表し、RおよびRの少なくとも一方は、アルキル基またはアリール基を表し、Rは、アルキル基またはアリール基を表し、RまたはRと、Rとが連結して環状エーテルを形成してもよく、
 Rは、アルキル基、アリール基、または、アラルキル基を表し、
 Lは、単結合または2価の連結基を表し、
 Lは、単結合または2価の連結基を表し、
 Rは、アルキル基またはハロゲン原子を表し、
 m1は、0~4の整数を表す。
<8> ポリシロキサン成分が有する架橋性基が、環状エーテル、および、エチレン性不飽和結合を有する基から選ばれる少なくとも1種である、<1>~<7>のいずれかに記載の感光性樹脂組成物。
<9> ポリシロキサンは、カルボキシ基およびフェノール性水酸基から選ばれる少なくとも1種の基を有する構成単位をさらに含む、<1>~<8>のいずれかに記載の感光性樹脂組成物。
<10> 光酸発生剤が、オニウム塩化合物、オキシムスルホネート化合物、および、イミドスルホネート化合物から選ばれる少なくとも1種である、<1>~<9>のいずれかに記載の感光性樹脂組成物。
<11> <1>~<10>のいずれかに記載の感光性樹脂組成物を基板上に塗布する工程、基板に塗布された感光性樹脂組成物から溶剤を除去する工程、溶剤が除去された感光性樹脂組成物を露光する工程、露光された感光性樹脂組成物を現像する工程、および、現像された感光性樹脂組成物を熱硬化する工程、を含む硬化膜の製造方法。
<12> <1>~<10>のいずれかに記載の感光性樹脂組成物を硬化した硬化膜。
<13> 層間絶縁膜である、<12>に記載の硬化膜。
<14> <12>または<13>に記載の硬化膜を有する、液晶表示装置。
<15> <12>または<13>に記載の硬化膜を有する、有機エレクトロルミネッセンス表示装置。
<16> <12>または<13>に記載の硬化膜を有する、タッチパネル。
<1> Polysiloxane component satisfying at least one of the following 1 and 2 as component A,
1: The structural unit a1 is selected from a group in which a carboxy group is protected by an acid-decomposable group, a group in which a phenolic hydroxyl group is protected by an acid-decomposable group, and a group in which a silanol group is protected by an acid-decomposable group A polysiloxane component comprising a polysiloxane having a structural unit having at least one kind of group and a structural unit having a crosslinkable group as the structural unit a2.
2: The structural unit a1 is selected from a group in which a carboxy group is protected with an acid-decomposable group, a group in which a phenolic hydroxyl group is protected with an acid-decomposable group, and a group in which a silanol group is protected with an acid-decomposable group A polysiloxane component comprising a polysiloxane having a structural unit having at least one kind of group and a polysiloxane having a structural unit having a crosslinkable group as the structural unit a2.
As a component B, a photoacid generator that generates an acid having a pKa of 3 or less,
As component C, a solvent, and
A photosensitive resin composition containing a blocked isocyanate compound as component S.
<2> The photosensitive resin composition according to <1>, containing 0.1 to 15% by mass of a blocked isocyanate compound based on the total solid content of the photosensitive resin composition.
<3> The blocked isocyanate compound is a compound obtained by protecting the isocyanate group of at least one compound selected from an isocyanate compound selected from tolylene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate and isophorone diisocyanate, and a multimer of isocyanate compounds. The photosensitive resin composition according to <1> or <2>.
<4> A blocked isocyanate compound is a compound in which an isocyanate group is protected and a block structure is formed by a compound selected from an oxime compound, a lactam compound, a phenol compound, an alcohol compound, an amine compound, an active methylene compound, and a pyrazole compound. The photosensitive resin composition according to any one of <1> to <3>.
<5> The photosensitive resin composition according to any one of <1> to <4>, wherein the block isocyanate compound has a molecular weight of 100 to 2,000.
<6> The photosensitive resin composition according to any one of <1> to <5>, wherein the acid-decomposable group included in the polysiloxane component is an acetal group.
<7> The structural unit a1 is at least one selected from the structural unit represented by the following general formula a1-1 and the structural unit represented by the following general formula a1-2, <1> to <6 > The photosensitive resin composition in any one of>
Figure JPOXMLDOC01-appb-C000002
In general formula a1-1 and general formula a1-2, a represents 0 or 1,
R 1 and R 2 each independently represents a hydrogen atom, an alkyl group or an aryl group, at least one of R 1 and R 2 represents an alkyl group or an aryl group, and R 3 represents an alkyl group or an aryl group. R 1 or R 2 and R 3 may be linked to form a cyclic ether,
R 4 represents an alkyl group, an aryl group, or an aralkyl group,
L 1 represents a single bond or a divalent linking group,
L 2 represents a single bond or a divalent linking group,
R x represents an alkyl group or a halogen atom,
m1 represents an integer of 0 to 4.
<8> The photosensitive property according to any one of <1> to <7>, wherein the crosslinkable group of the polysiloxane component is at least one selected from a cyclic ether and a group having an ethylenically unsaturated bond. Resin composition.
<9> The photosensitive resin composition according to any one of <1> to <8>, wherein the polysiloxane further includes a structural unit having at least one group selected from a carboxy group and a phenolic hydroxyl group.
<10> The photosensitive resin composition according to any one of <1> to <9>, wherein the photoacid generator is at least one selected from an onium salt compound, an oxime sulfonate compound, and an imide sulfonate compound.
<11> A step of applying the photosensitive resin composition according to any one of <1> to <10> on a substrate, a step of removing a solvent from the photosensitive resin composition applied to the substrate, and the solvent is removed. A method for producing a cured film, comprising: exposing the exposed photosensitive resin composition; developing the exposed photosensitive resin composition; and thermally curing the developed photosensitive resin composition.
<12> A cured film obtained by curing the photosensitive resin composition according to any one of <1> to <10>.
<13> The cured film according to <12>, which is an interlayer insulating film.
<14> A liquid crystal display device having the cured film according to <12> or <13>.
<15> An organic electroluminescence display device having the cured film according to <12> or <13>.
<16> A touch panel having the cured film according to <12> or <13>.
 感度が良好で、ポリシロキサンを用いても、金属を変色し難い感光性樹脂組成物を提供可能になった。また、感光性樹脂組成物を用いた硬化膜の製造方法、硬化膜、液晶表示装置、有機エレクトロルミネッセンス表示装置およびタッチパネルを提供可能になった。 It is now possible to provide a photosensitive resin composition that has good sensitivity and hardly discolors metal even when polysiloxane is used. Moreover, the manufacturing method of the cured film using the photosensitive resin composition, a cured film, a liquid crystal display device, an organic electroluminescent display device, and a touch panel can be provided now.
液晶表示装置の一例の構成概念図である。It is a composition conceptual diagram of an example of a liquid crystal display. 液晶表示装置の他の例の構成概念図である。It is a composition conceptual diagram of other examples of a liquid crystal display. 有機EL表示装置の一例の構成概念図を示す。1 shows a conceptual diagram of a configuration of an example of an organic EL display device. 静電容量方式のタッチパネルの構成例を示す断面図である。It is sectional drawing which shows the structural example of a capacitive touch panel. 前面板の一例を示す説明図である。It is explanatory drawing which shows an example of a front plate. 第一の透明電極パターンおよび第二の透明電極パターンの一例を示す説明図である。It is explanatory drawing which shows an example of a 1st transparent electrode pattern and a 2nd transparent electrode pattern.
 以下において、本発明の内容について詳細に説明する。以下に記載する構成要件の説明は、本発明の代表的な実施態様に基づいてなされることがあるが、本発明はそのような実施態様に限定されるものではない。
 なお、本明細書において「~」とはその前後に記載される数値を下限値および上限値として含む意味で使用される。
 本明細書における基(原子団)の表記において、置換および無置換を記していない表記は、置換基を有さないものと共に置換基を有するものをも包含するものである。例えば「アルキル基」とは、置換基を有さないアルキル基(無置換アルキル基)のみならず、置換基を有するアルキル基(置換アルキル基)をも包含するものである。
 本明細書における固形分濃度とは、25℃における固形分の濃度をいう。
 本明細書における粘度とは、25℃における粘度をいう。
 本明細書において、重量平均分子量および数平均分子量は、ゲルパーミエーションクロマトグラフィ(GPC)測定によるポリスチレン換算値として定義される。本明細書において、重量平均分子量(Mw)及び数平均分子量(Mn)は、例えば、HLC-8120(東ソー(株)製)を用い、カラムとしてTSK gel Multipore HXL-M(東ソー(株)製、7.8mmID×30.0cmを、溶離液としてTHF(テトラヒドロフラン)を用いることによって求めることができる。
Hereinafter, the contents of the present invention will be described in detail. The description of the constituent elements described below may be made based on typical embodiments of the present invention, but the present invention is not limited to such embodiments.
In the present specification, “˜” is used to mean that the numerical values described before and after it are included as a lower limit value and an upper limit value.
In the description of the group (atomic group) in this specification, the description which does not describe substitution and non-substitution includes what does not have a substituent and what has a substituent. For example, the “alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
The solid content concentration in this specification refers to the solid content concentration at 25 ° C.
The viscosity in this specification refers to a viscosity at 25 ° C.
In this specification, a weight average molecular weight and a number average molecular weight are defined as a polystyrene conversion value by a gel permeation chromatography (GPC) measurement. In this specification, the weight average molecular weight (Mw) and the number average molecular weight (Mn) are, for example, using HLC-8120 (manufactured by Tosoh Corporation) and using TSK gel Multipore HXL-M (manufactured by Tosoh Corporation) as a column. 7.8 mm ID × 30.0 cm can be determined by using THF (tetrahydrofuran) as the eluent.
<感光性樹脂組成物>
 本発明の感光性樹脂組成物は、後述するポリシロキサン成分と、pKaが3以下の酸を発生する光酸発生剤と、溶剤と、ブロックイソシアネート化合物を含有する。
 本発明の感光性樹脂組成物は、後述するポリシロキサン成分と、光酸発生剤を含むので、感度が良好である。また、ポリシロキサン成分を含ことにより、耐熱性に優れた硬化膜を形成することもできる。そして、ブロックイソシアネート化合物を含むことにより金属の変色を抑制することができる。ブロックイソシアネート化合物を含有することにより、金属の変色を抑制できるメカニズムは、以下によるものと推測される。すなわち、ポリシロキサンの重縮合時に生成した水が、ブロックイソシアネート化合物によって捕捉されて、膜中の含水量を低減させるため、金属の変色を抑制できたと考えられる。
 本発明の感光性樹脂組成物は、化学増幅型ポジ型感光性樹脂組成物として好ましく用いることができる。
 以下、本発明の感光性樹脂組成物の各成分についてさらに詳しく説明する。
<Photosensitive resin composition>
The photosensitive resin composition of the present invention contains a polysiloxane component described later, a photoacid generator that generates an acid having a pKa of 3 or less, a solvent, and a blocked isocyanate compound.
Since the photosensitive resin composition of this invention contains the polysiloxane component mentioned later and a photo-acid generator, a sensitivity is favorable. Moreover, the cured film excellent in heat resistance can also be formed by including a polysiloxane component. And discoloration of a metal can be suppressed by including a block isocyanate compound. The mechanism by which the discoloration of the metal can be suppressed by containing the blocked isocyanate compound is presumed to be as follows. That is, it is considered that the water generated during the polycondensation of polysiloxane was captured by the blocked isocyanate compound and the water content in the film was reduced, so that the discoloration of the metal could be suppressed.
The photosensitive resin composition of the present invention can be preferably used as a chemically amplified positive photosensitive resin composition.
Hereinafter, each component of the photosensitive resin composition of the present invention will be described in more detail.
<<(A)ポリシロキサン成分(成分A)>>
 本発明の感光性樹脂組成物において、ポリシロキサン成分は、下記(1)および(2)の少なくとも一方を満たす。
 (1)(a1)カルボキシ基が酸分解性基で保護された基、フェノール性水酸基が酸分解性基で保護された基、および、シラノール基が酸分解性基で保護された基から選ばれる少なくとも1種の基を有する構成単位と、(a2)架橋性基を有する構成単位とを有するポリシロキサン(A1)を含むポリシロキサン成分。
 (2)(a1)カルボキシ基が酸分解性基で保護された基、フェノール性水酸基が酸分解性基で保護された基、および、シラノール基が酸分解性基で保護された基から選ばれる少なくとも1種の基を有する構成単位を有するポリシロキサン(A2)と、(a2)架橋性基を有する構成単位を有するポリシロキサン(A3)とを含むポリシロキサン成分。
 (A)ポリシロキサン成分は、特に述べない限り、上記ポリシロキサンに加え、必要に応じて添加される他のポリシロキサンを含めたものを意味する。
 (A)ポリシロキサン成分に含まれる構成単位(a1)と構成単位(a2)とのモル比は、構成単位(a1):構成単位(a2)=10:90~90:10が好ましく、80:20~20:80がより好ましく、60:40~30:70が更に好ましい。
<< (A) Polysiloxane Component (Component A) >>
In the photosensitive resin composition of the present invention, the polysiloxane component satisfies at least one of the following (1) and (2).
(1) (a1) selected from a group in which a carboxy group is protected with an acid-decomposable group, a group in which a phenolic hydroxyl group is protected with an acid-decomposable group, and a group in which a silanol group is protected with an acid-decomposable group A polysiloxane component comprising polysiloxane (A1) having a structural unit having at least one group and (a2) a structural unit having a crosslinkable group.
(2) (a1) selected from a group in which a carboxy group is protected by an acid-decomposable group, a group in which a phenolic hydroxyl group is protected by an acid-decomposable group, and a group in which a silanol group is protected by an acid-decomposable group A polysiloxane component comprising polysiloxane (A2) having a structural unit having at least one group and (a2) polysiloxane (A3) having a structural unit having a crosslinkable group.
(A) Unless otherwise stated, a polysiloxane component means what included other polysiloxane added as needed in addition to the said polysiloxane.
(A) The molar ratio between the structural unit (a1) and the structural unit (a2) contained in the polysiloxane component is preferably structural unit (a1): structural unit (a2) = 10: 90 to 90:10, 80: 20 to 20:80 is more preferable, and 60:40 to 30:70 is still more preferable.
 上記(1)の態様では、少なくとも1種類のポリシロキサン(A1)を含み、ポリシロキサン(A1)が構成単位(a1)、および構成単位(a2)を有する態様である。構成単位(a1)や、構成単位(a2)は、それぞれ、2種類以上含んでいてもよい。また、後述する酸基を有する構成単位(a3)や、構成単位(a4)を含んでいてもよい。
 
 ポリシロキサン(A1)の構成単位(a1)の割合は、感度の観点から、ポリシロキサン(A1)の全構成単位に対して、10~90モル%が好ましい。下限は、15モル%以上が好ましく、20モル%以上が更に好ましい。上限は、80モル%以下が好ましく、60モル%以下が更に好ましい。
 また、構成単位(a2)の割合は、硬化膜特性の観点から、ポリシロキサン(A1)の全構成単位に対して、10~90モル%が好ましい。下限は、20モル%以上が好ましく、30モル%以上が更に好ましい。上限は、80モル%以下が好ましく、70モル%以下が更に好ましい。
 また、構成単位(a3)の割合は、感度の観点から、ポリシロキサン(A1)の全構成単位に対して、0~50モル%が好ましい。下限は、1モル%以上が好ましく、5モル%以上が更に好ましい。上限は、30モル%以下が好ましく、20モル%以下が更に好ましい。
 また、構成単位(a4)の割合は、現像性、および、硬化膜特性の観点から、ポリシロキサン(A1)の全構成単位に対して、0~40モル%が好ましい。下限は、1モル%以上が好ましく、5モル%以上が更に好ましい。上限は、30モル%以下が好ましく、20モル%以下が更に好ましい。
In the aspect (1), at least one polysiloxane (A1) is contained, and the polysiloxane (A1) has the structural unit (a1) and the structural unit (a2). Each of the structural unit (a1) and the structural unit (a2) may contain two or more types. Moreover, the structural unit (a3) which has an acid group mentioned later, and the structural unit (a4) may be included.

The proportion of the structural unit (a1) of the polysiloxane (A1) is preferably 10 to 90 mol% with respect to the total structural units of the polysiloxane (A1) from the viewpoint of sensitivity. The lower limit is preferably 15 mol% or more, and more preferably 20 mol% or more. The upper limit is preferably 80 mol% or less, and more preferably 60 mol% or less.
The proportion of the structural unit (a2) is preferably 10 to 90 mol% with respect to all the structural units of the polysiloxane (A1) from the viewpoint of cured film characteristics. The lower limit is preferably 20 mol% or more, and more preferably 30 mol% or more. The upper limit is preferably 80 mol% or less, and more preferably 70 mol% or less.
In addition, the proportion of the structural unit (a3) is preferably 0 to 50 mol% with respect to all the structural units of the polysiloxane (A1) from the viewpoint of sensitivity. The lower limit is preferably 1 mol% or more, more preferably 5 mol% or more. The upper limit is preferably 30 mol% or less, and more preferably 20 mol% or less.
The proportion of the structural unit (a4) is preferably 0 to 40 mol% with respect to all the structural units of the polysiloxane (A1) from the viewpoints of developability and cured film characteristics. The lower limit is preferably 1 mol% or more, more preferably 5 mol% or more. The upper limit is preferably 30 mol% or less, and more preferably 20 mol% or less.
 上記(2)の態様では、構成単位(a1)を有するポリシロキサン(A2)と、構成単位(a2)を有するポリシロキサン(A3)とを含む態様である。構成単位(a1)を含むポリシロキサン(A2)は、さらに、構成単位(a2)を含んでいても良い。同様に、構成単位(a2)を含むポリシロキサン(A3)は、構成単位(a1)を含んでいても良い。このような場合、(1)と(2)の両方を満たす態様となる。また、ポリシロキサン(A2)、ポリシロキサン(A3)は、後述する酸基を有する構成単位(a3)や他の構成単位(a4)を含んでいてもよい。
 ポリシロキサン(A2)の構成単位(a1)の割合は、ポリシロキサン(A2)の全構成単位に対して、10~90モル%が好ましい。下限は、30モル%以上が好ましく、40モル%以上が更に好ましい。上限は、90モル%以下が好ましく、80モル%以下が更に好ましい。また、構成単位(a3)の割合は、ポリシロキサン(A2)の全構成単位に対して、0~50モル%が好ましい。下限は、1モル%以上が好ましく、5モル%以上が更に好ましい。上限は、30モル%以下が好ましく、20モル%以下が更に好ましい。また、構成単位(a4)の割合は、ポリシロキサン(A2)の全構成単位に対して、0~40モル%が好ましい。下限は、1モル%以上が好ましく、5モル%以上が更に好ましい。上限は、30モル%以下が好ましく、20モル%以下が更に好ましい。
 ポリシロキサン(A3)の構成単位(a2)の割合は、ポリシロキサン(A3)の全構成単位に対して、10~90モル%が好ましい。下限は、30モル%以上が好ましく、50モル%以上が更に好ましい。上限は、90モル%以下が好ましく、80モル%以下が更に好ましい。また、構成単位(a4)の割合は、ポリシロキサン(A3)の全構成単位に対して、0~40モル%が好ましい。下限は、1モル%以上が好ましく、5モル%以上が更に好ましい。上限は、30モル%以下が好ましく、20モル%以下が更に好ましい。
 上記(2)の態様の場合には、構成単位(a1)を有するポリシロキサン(A2)と、構成単位(a2)を有するポリシロキサン(A3)との質量割合は、95:5~5:95が好ましく、80:20~20:80がより好ましく、70:30~30:70がさらに好ましい。
In the aspect (2), the polysiloxane (A2) having the structural unit (a1) and the polysiloxane (A3) having the structural unit (a2) are included. The polysiloxane (A2) containing the structural unit (a1) may further contain the structural unit (a2). Similarly, the polysiloxane (A3) containing the structural unit (a2) may contain the structural unit (a1). In such a case, the aspect satisfies both (1) and (2). Moreover, polysiloxane (A2) and polysiloxane (A3) may contain the structural unit (a3) which has the acid group mentioned later, and another structural unit (a4).
The proportion of the structural unit (a1) of the polysiloxane (A2) is preferably 10 to 90 mol% with respect to all the structural units of the polysiloxane (A2). The lower limit is preferably 30 mol% or more, and more preferably 40 mol% or more. The upper limit is preferably 90 mol% or less, and more preferably 80 mol% or less. The proportion of the structural unit (a3) is preferably 0 to 50 mol% with respect to all the structural units of the polysiloxane (A2). The lower limit is preferably 1 mol% or more, more preferably 5 mol% or more. The upper limit is preferably 30 mol% or less, and more preferably 20 mol% or less. The proportion of the structural unit (a4) is preferably 0 to 40 mol% with respect to all the structural units of the polysiloxane (A2). The lower limit is preferably 1 mol% or more, more preferably 5 mol% or more. The upper limit is preferably 30 mol% or less, and more preferably 20 mol% or less.
The proportion of the structural unit (a2) of the polysiloxane (A3) is preferably 10 to 90 mol% with respect to all the structural units of the polysiloxane (A3). The lower limit is preferably 30 mol% or more, and more preferably 50 mol% or more. The upper limit is preferably 90 mol% or less, and more preferably 80 mol% or less. The proportion of the structural unit (a4) is preferably 0 to 40 mol% with respect to all the structural units of the polysiloxane (A3). The lower limit is preferably 1 mol% or more, more preferably 5 mol% or more. The upper limit is preferably 30 mol% or less, and more preferably 20 mol% or less.
In the case of the above aspect (2), the mass ratio of the polysiloxane (A2) having the structural unit (a1) and the polysiloxane (A3) having the structural unit (a2) is 95: 5 to 5:95. Is preferable, 80:20 to 20:80 is more preferable, and 70:30 to 30:70 is more preferable.
 本発明に用いるポリシロキサンの構造は、特に限定はない。直鎖状、環状、梯子状、網目状いずれでもよく、これらが相互に連結された構造でも良い。梯子状または、網目状の構造を含むことが硬化膜硬度の点で好ましい。
 ポリシロキサン成分に含まれるポリシロキサンの重量平均分子量は、1,000~200,000が好ましく、2,000~50,000がより好ましい。上記範囲内であると、諸特性が良好である。数平均分子量と重量平均分子量の比(分散度)は、1.0~5.0が好ましく1.5~3.5がより好ましい。
The structure of the polysiloxane used in the present invention is not particularly limited. Any of a straight chain shape, a ring shape, a ladder shape, and a mesh shape may be used, and a structure in which these are connected to each other may be used. It is preferable in terms of hardness of the cured film that a ladder-like or network-like structure is included.
The weight average molecular weight of the polysiloxane contained in the polysiloxane component is preferably 1,000 to 200,000, and more preferably 2,000 to 50,000. Various characteristics are favorable in the said range. The ratio (dispersity) between the number average molecular weight and the weight average molecular weight is preferably 1.0 to 5.0, more preferably 1.5 to 3.5.
<<<(a1)カルボキシ基が酸分解性基で保護された基、フェノール性水酸基が酸分解性基で保護された基、および、シラノール基が酸分解性基で保護された基から選ばれる少なくとも1種の基を有する構成単位>>>
 本発明で用いるポリシロキサンは、カルボキシ基が酸分解性基で保護された基、フェノール性水酸基が酸分解性基で保護された基、および、シラノール基が酸分解性基で保護された基から選ばれる少なくとも1種の基を有する構成単位(a1)を有する。以下、カルボキシ基、フェノール性水酸基およびシラノール基をあわせて酸基ともいう。
 本発明において、「カルボキシ基が酸分解性基で保護された基」、「フェノール性水酸基が酸分解性基で保護された基」、「シラノール基が酸分解性基で保護された基」とは、酸を触媒(または開始剤)として脱保護反応を起こし、上述した酸基と、再生された酸と、分解された構造とを生じる基を意味する。
 酸基は、カルボキシ基またはフェノール性水酸基が好ましく、カルボキシ基がより好ましい。
 酸分解性基は、酸により比較的分解し易い基(例えば、後述するエステル構造、テトラヒドロピラニルエステル基、または、テトラヒドロフラニルエステル基等のアセタール系官能基)や酸により比較的分解し難い基(例えば、tert-ブチルエステル基等の第三級アルキル基、tert-ブチルカーボネート基等の第三級アルキルカーボネート基)を用いることができる。これらの基の中でも、アセタール基が好ましい。
 すなわち、構成単位(a1)は、カルボキシ基がアセタール基で保護された保護カルボキシ基、または、フェノール性水酸基がアセタール基で保護された保護フェノール基を有することが好ましく、カルボキシ基がアセタール基で保護された保護カルボキシ基を有することがより好ましい。この態様によれば、感光性樹脂組成物の基本物性、特に感度やパターン形状、コンタクトホールの形成性、感光性樹脂組成物の保存安定性の観点から好ましい。シラノール基が酸分解性基で保護された基の含有量は、構成単位(a1)を含むポリシロキサンの全構成単位に対して、30モル%以下が好ましく、10モル%以下がより好ましく、5モル%以下が更に好ましく、実質的に含有しないことが一層好ましい。実質的に含有しないとは、構成単位(a1)を含むポリシロキサンの全構成単位に対して、例えば、1モル%以下が好ましく、0.5モル%以下がより好ましく、含有しないことが一層好ましい。
<< (a1) selected from a group in which a carboxy group is protected by an acid-decomposable group, a group in which a phenolic hydroxyl group is protected by an acid-decomposable group, and a group in which a silanol group is protected by an acid-decomposable group Constituent unit having at least one group >>
The polysiloxane used in the present invention includes a group in which a carboxy group is protected with an acid-decomposable group, a group in which a phenolic hydroxyl group is protected with an acid-decomposable group, and a group in which a silanol group is protected with an acid-decomposable group. It has a structural unit (a1) having at least one selected group. Hereinafter, the carboxy group, the phenolic hydroxyl group, and the silanol group are collectively referred to as an acid group.
In the present invention, “a group in which a carboxy group is protected with an acid-decomposable group”, “a group in which a phenolic hydroxyl group is protected with an acid-decomposable group”, and “a group in which a silanol group is protected with an acid-decomposable group” Means a group that causes a deprotection reaction using an acid as a catalyst (or an initiator), and generates the above-described acid group, a regenerated acid, and a decomposed structure.
The acid group is preferably a carboxy group or a phenolic hydroxyl group, and more preferably a carboxy group.
An acid-decomposable group is a group that is relatively easily decomposed by an acid (for example, an acetal functional group such as an ester structure, a tetrahydropyranyl ester group, or a tetrahydrofuranyl ester group described later) or a group that is relatively difficult to decompose by an acid ( For example, a tertiary alkyl group such as a tert-butyl ester group or a tertiary alkyl carbonate group such as a tert-butyl carbonate group) can be used. Among these groups, an acetal group is preferable.
That is, the structural unit (a1) preferably has a protected carboxy group in which a carboxy group is protected with an acetal group, or a protected phenol group in which a phenolic hydroxyl group is protected with an acetal group, and the carboxy group is protected with an acetal group. It is more preferable to have a protected carboxy group. According to this aspect, it is preferable from the viewpoints of basic physical properties of the photosensitive resin composition, particularly sensitivity, pattern shape, contact hole formability, and storage stability of the photosensitive resin composition. The content of the group in which the silanol group is protected with an acid-decomposable group is preferably 30 mol% or less, more preferably 10 mol% or less, based on all the structural units of the polysiloxane including the structural unit (a1). More preferably, it is more preferably not more than mol%, and substantially not contained. “Substantially not contained” means, for example, preferably 1 mol% or less, more preferably 0.5 mol% or less, and even more preferably not to all polysiloxane structural units including the structural unit (a1). .
 構成単位(a1)は、下記一般式(a1-1)で表される構成単位、および/または、下記一般式(a1-2)で表される構成単位であることが好ましい。 The structural unit (a1) is preferably a structural unit represented by the following general formula (a1-1) and / or a structural unit represented by the following general formula (a1-2).
Figure JPOXMLDOC01-appb-C000003
 一般式(a1-1)、(a1-2)中、aは0または1を表し、
 RおよびRは、それぞれ独立に、水素原子、アルキル基またはアリール基を表し、RおよびRの少なくとも一方は、アルキル基またはアリール基を表し、Rは、アルキル基またはアリール基を表し、RまたはRと、Rとが連結して環状エーテルを形成してもよく、
 Rは、アルキル基、アリール基、または、アラルキル基を表し、
 Lは、単結合または2価の連結基を表し、
 Lは、単結合または2価の連結基を表し、
 Rは、アルキル基またはハロゲン原子を表し、
 m1は、0~4の整数を表す。
Figure JPOXMLDOC01-appb-C000003
In general formulas (a1-1) and (a1-2), a represents 0 or 1;
R 1 and R 2 each independently represents a hydrogen atom, an alkyl group or an aryl group, at least one of R 1 and R 2 represents an alkyl group or an aryl group, and R 3 represents an alkyl group or an aryl group. R 1 or R 2 and R 3 may be linked to form a cyclic ether,
R 4 represents an alkyl group, an aryl group, or an aralkyl group,
L 1 represents a single bond or a divalent linking group,
L 2 represents a single bond or a divalent linking group,
R x represents an alkyl group or a halogen atom,
m1 represents an integer of 0 to 4.
 RおよびRは、それぞれ独立に、水素原子、アルキル基またはアリール基を表し、RおよびRの少なくとも一方がアルキル基またはアリール基である。
 アルキル基としては、炭素数1~10のアルキル基が好ましく、炭素数1~8のアルキル基がより好ましく、炭素数1~6のアルキル基がさらに好ましい。アルキル基は、無置換であってもよく、置換基を有していてもよい。また、アルキル基は、直鎖、分岐、環状のいずれであってもよいが、直鎖のアルキル基が好ましい。アルキル基の具体例としては、例えば、メチル基、エチル基、プロピル基、ブチル基、t-ブチル基、ペンチル基、ヘキシル基、シクロヘキシル基等が例示される。アルキル基が有していてもよい置換基としては、炭素数1~10のアルコキシ基、炭素数1~10のチオアルコキシ基、ヒドロキシル基、シアノ基、ハロゲン原子(フッ素原子、塩素原子、臭素原子、ヨウ素原子)などが挙げられる。これらの置換基は、さらに置換基を有していてもよい。
 アリール基としては、炭素数6~20のアリール基が好ましく、炭素数6~14のアリール基がより好ましく、炭素数6~10のアリール基がさらに好ましい。アリール基は、無置換であってもよく、置換基を有していてもよい。アリール基の具体例としては、例えば、フェニル基、ナフチル基、アントラセニル基等が例示される。置換基としては、上述したものが挙げられる。また、炭素数1~10のアルキル基を置換基とすることもできる。
 RおよびRは、それぞれ独立に、水素原子、または、アルキル基であることが好ましく、水素原子、または、メチル基であることがより好ましく、RおよびRの一方がメチル基であり、他方が水素原子であることが特に好ましい。
R 1 and R 2 each independently represents a hydrogen atom, an alkyl group or an aryl group, and at least one of R 1 and R 2 is an alkyl group or an aryl group.
As the alkyl group, an alkyl group having 1 to 10 carbon atoms is preferable, an alkyl group having 1 to 8 carbon atoms is more preferable, and an alkyl group having 1 to 6 carbon atoms is more preferable. The alkyl group may be unsubstituted or may have a substituent. The alkyl group may be linear, branched or cyclic, but is preferably a linear alkyl group. Specific examples of the alkyl group include a methyl group, an ethyl group, a propyl group, a butyl group, a t-butyl group, a pentyl group, a hexyl group, and a cyclohexyl group. Examples of the substituent that the alkyl group may have include an alkoxy group having 1 to 10 carbon atoms, a thioalkoxy group having 1 to 10 carbon atoms, a hydroxyl group, a cyano group, and a halogen atom (fluorine atom, chlorine atom, bromine atom). , Iodine atom) and the like. These substituents may further have a substituent.
As the aryl group, an aryl group having 6 to 20 carbon atoms is preferable, an aryl group having 6 to 14 carbon atoms is more preferable, and an aryl group having 6 to 10 carbon atoms is further preferable. The aryl group may be unsubstituted or may have a substituent. Specific examples of the aryl group include a phenyl group, a naphthyl group, and an anthracenyl group. Examples of the substituent include those described above. In addition, an alkyl group having 1 to 10 carbon atoms can be used as a substituent.
R 1 and R 2 are each independently preferably a hydrogen atom or an alkyl group, more preferably a hydrogen atom or a methyl group, and one of R 1 and R 2 is a methyl group. The other is particularly preferably a hydrogen atom.
 Rはアルキル基またはアリール基を表す。Rが表すアルキル基、およびアリール基は、RおよびRにおけるアルキル基、アリール基と同義である。Rは、メチル基、エチル基、プロピル基であることが好ましく、エチル基、プロピル基がより好ましい。
 Rは、RまたはRと連結して環状エーテルを形成してもよい。RまたはRと連結して形成される環状エーテルとしては、3~6員環の環状エーテルが好ましく、5~6員環の環状エーテルがより好ましい。
R 3 represents an alkyl group or an aryl group. The alkyl group and aryl group represented by R 3 have the same meanings as the alkyl group and aryl group in R 1 and R 2 . R 3 is preferably a methyl group, an ethyl group, or a propyl group, and more preferably an ethyl group or a propyl group.
R 3 may be linked to R 1 or R 2 to form a cyclic ether. The cyclic ether formed by linking with R 1 or R 2 is preferably a 3- to 6-membered cyclic ether, more preferably a 5- to 6-membered cyclic ether.
 Rは、アルキル基、アリール基、または、アラルキル基を表す。
 アルキル基としては、炭素数1~10のアルキル基が好ましく、炭素数1~8のアルキル基がより好ましく、炭素数1~6のアルキル基がさらに好ましい。アルキル基は、置換基を有していてもよい。また、アルキル基は、直鎖、分岐、環状のいずれであってもよい。
 アリール基としては、炭素数6~20のアリール基が好ましく、炭素数6~14のアリール基がより好ましく、炭素数6~10のアリール基がさらに好ましい。アリール基は、置換基を有していてもよい。アリール基としては、例えば、フェニル基、ナフチル基、アントラセニル基等が例示される。
 アラルキル基としては、炭素数1~10のアルキル基の水素原子の一部が、炭素数6~20のアリール基に置換されている基が好ましい。アラルキル基は、置換基を有していてもよい。アラルキル基を構成するアルキル基は、直鎖、分岐、環状のいずれであってもよい。
 アルキル基、アリール基、アラルキル基が有してもよい置換基としては、R、Rで説明した置換基と同様である。
 Rは、溶剤耐性や耐熱性の観点からメチル基、フェニル基、プロピル基、ブチル基、ヘキシル基が好ましく、メチル基、フェニル基がより好ましい。
R 4 represents an alkyl group, an aryl group, or an aralkyl group.
As the alkyl group, an alkyl group having 1 to 10 carbon atoms is preferable, an alkyl group having 1 to 8 carbon atoms is more preferable, and an alkyl group having 1 to 6 carbon atoms is more preferable. The alkyl group may have a substituent. The alkyl group may be linear, branched or cyclic.
As the aryl group, an aryl group having 6 to 20 carbon atoms is preferable, an aryl group having 6 to 14 carbon atoms is more preferable, and an aryl group having 6 to 10 carbon atoms is further preferable. The aryl group may have a substituent. Examples of the aryl group include a phenyl group, a naphthyl group, and an anthracenyl group.
As the aralkyl group, a group in which a part of hydrogen atoms of an alkyl group having 1 to 10 carbon atoms is substituted with an aryl group having 6 to 20 carbon atoms is preferable. The aralkyl group may have a substituent. The alkyl group constituting the aralkyl group may be linear, branched or cyclic.
The substituents that the alkyl group, aryl group, and aralkyl group may have are the same as the substituents described for R 1 and R 2 .
R 4 is preferably a methyl group, a phenyl group, a propyl group, a butyl group, or a hexyl group from the viewpoint of solvent resistance or heat resistance, and more preferably a methyl group or a phenyl group.
 Rは、アルキル基またはハロゲン原子を表す。アルキル基としては、炭素数1~4のアルキル基が好ましい。ハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子が好ましい。 R x represents an alkyl group or a halogen atom. As the alkyl group, an alkyl group having 1 to 4 carbon atoms is preferable. As a halogen atom, a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom are preferable.
 LおよびLは、単結合または2価の連結基を表す。2価の連結基としては、炭素数1~12のアルキレン基、炭素数1~12のアルキレンオキサイド基、炭素数6~12のアリーレン基が挙げられる。アルキレンオキサイド基、および、アルキレンオキサイド基は、直鎖、分岐、環状のいずれであってもよい。また、アルキレン基、アルキレンオキサイド基、アリーレン基は、置換基を有していてもよい。置換基としては、R、Rで説明した置換基と同様である。また、カルボキシ基、フェノール基、スルホンアミド基、ホスホニル基、スルホニル基、スルホンアミド基、スルホニルイミド基等の酸基を置換基として有していてもよい。
 m1は、0~4の整数を表し、0~2が好ましく、0~1がより好ましく、0が最も好ましい。
L 1 and L 2 represent a single bond or a divalent linking group. Examples of the divalent linking group include an alkylene group having 1 to 12 carbon atoms, an alkylene oxide group having 1 to 12 carbon atoms, and an arylene group having 6 to 12 carbon atoms. The alkylene oxide group and the alkylene oxide group may be linear, branched or cyclic. In addition, the alkylene group, alkylene oxide group, and arylene group may have a substituent. Examples of the substituent are the same as those described for R 1 and R 2 . Moreover, you may have acid groups, such as a carboxy group, a phenol group, a sulfonamide group, a phosphonyl group, a sulfonyl group, a sulfonamide group, a sulfonylimide group, as a substituent.
m1 represents an integer of 0 to 4, preferably 0 to 2, more preferably 0 to 1, and most preferably 0.
 上記一般式(a1-2)で表される構成単位は、下記一般式(a1-2-1)で表される構成単位であることが好ましい。 The structural unit represented by the general formula (a1-2) is preferably a structural unit represented by the following general formula (a1-2-1).
Figure JPOXMLDOC01-appb-C000004
Figure JPOXMLDOC01-appb-C000004
 一般式(a1-2-1)中、aは0または1を表し、RおよびRは、それぞれ独立に、水素原子、アルキル基またはアリール基を表し、RおよびRの少なくとも一方がアルキル基またはアリール基を表し、Rは、アルキル基またはアリール基を表し、RまたはRと、Rとが連結して環状エーテルを形成してもよく、Rは、アルキル基、アリール基、または、アラルキル基を表し、Lは、単結合または2価の連結基を表し、Rは、アルキル基またはハロゲン原子を表し、m1は、0~4の整数を表す。 In general formula (a1-2-1), a represents 0 or 1, R 1 and R 2 each independently represents a hydrogen atom, an alkyl group, or an aryl group, and at least one of R 1 and R 2 is Represents an alkyl group or an aryl group, R 3 represents an alkyl group or an aryl group, and R 1 or R 2 and R 3 may be linked to form a cyclic ether, and R 4 represents an alkyl group, An aryl group or an aralkyl group is represented, L 2 represents a single bond or a divalent linking group, R x represents an alkyl group or a halogen atom, and m1 represents an integer of 0 to 4.
 構成単位(a1)を得るために使用できるシラン化合物の具体例としては、例えば、以下に示すシラン化合物が挙げられる。 Specific examples of the silane compound that can be used for obtaining the structural unit (a1) include the following silane compounds.
Figure JPOXMLDOC01-appb-C000005
Figure JPOXMLDOC01-appb-C000005
<<<架橋性基を有する構成単位(a2)>>>
 構成単位(a2)は、架橋性基を有する。本発明において、架橋性基とは、熱によって架橋反応を生じうる基を意味する。
架橋性基は、1気圧における加熱処理の際の架橋反応の開始温度が100℃以上の基であれば特に限定はされない。架橋反応の開始温度は公知の手法を使って分析することができ、例えばDSC測定(Differential scanning calorimetry)を用いた手法によって分析することができる。
 架橋性基としては、環状エーテル、エチレン性不飽和結合を有する基、アルコキシメチル基、メチロール基、アミノ基などが挙げられる。また、架橋性基は、連結基等を介して結合していてもよい。
 環状エーテルとしては、エポキシ基、オキセタニル基が挙げられる。
 エチレン性不飽和結合を有する基としては、ビニル基、アリル基、メタリル基、メタクリロイル基、アクリロイル基、アリルオキシカルボニル基、メタリルオキシカルボニル基などが挙げられる。
 アルコキシメチル基としては、「-CHOR」で表される基が挙げられる。Rは炭素原子数1~8のアルキル基を表し、炭素数1~4のアルキル基が好ましく、メチル基がより好ましい。アルキル基は、直鎖、分岐、および、環状のいずれでもよいが、直鎖が好ましい。
 アミノ基としては、置換基を有するアミノ基であってもよく、無置換のアミノ基であってもよい。
 架橋性基は、環状エーテル、エチレン性不飽和結合を有する基が好ましく、環状エーテルがより好ましく、エポキシ基またはオキセタニル基がさらに好ましく、エポキシ基が特に好ましい。環状エーテルは、未反応の酸基を消費して強固な硬化膜を形成できる。このため、硬化膜に未反応の酸基が残存し難くできるので、耐熱性、耐溶剤性、基材密着性などに優れた硬化膜を形成できる。
 架橋性基の具体例としては、以下のものが挙げられるが、これらに限定されるものではない。式中*は、他の基との連結部分を表す。
<<< Structural Unit (a2) Having Crosslinkable Group >>>
The structural unit (a2) has a crosslinkable group. In the present invention, the crosslinkable group means a group capable of causing a crosslinking reaction by heat.
The crosslinkable group is not particularly limited as long as it is a group having a crosslinking reaction starting temperature of 100 ° C. or higher during heat treatment at 1 atm. The initiation temperature of the cross-linking reaction can be analyzed using a known method, for example, by a method using DSC measurement (Differential scanning calorimetry).
Examples of the crosslinkable group include a cyclic ether, a group having an ethylenically unsaturated bond, an alkoxymethyl group, a methylol group, and an amino group. The crosslinkable group may be bonded via a linking group or the like.
Examples of the cyclic ether include an epoxy group and an oxetanyl group.
Examples of the group having an ethylenically unsaturated bond include vinyl group, allyl group, methallyl group, methacryloyl group, acryloyl group, allyloxycarbonyl group, and methallyloxycarbonyl group.
Examples of the alkoxymethyl group include a group represented by “—CH 2 OR”. R represents an alkyl group having 1 to 8 carbon atoms, preferably an alkyl group having 1 to 4 carbon atoms, and more preferably a methyl group. The alkyl group may be linear, branched or cyclic, but is preferably linear.
The amino group may be an amino group having a substituent or an unsubstituted amino group.
The crosslinkable group is preferably a cyclic ether or a group having an ethylenically unsaturated bond, more preferably a cyclic ether, still more preferably an epoxy group or an oxetanyl group, and particularly preferably an epoxy group. Cyclic ethers can consume unreacted acid groups to form a strong cured film. For this reason, since unreacted acid groups can hardly remain in the cured film, a cured film excellent in heat resistance, solvent resistance, substrate adhesion, and the like can be formed.
Specific examples of the crosslinkable group include the following, but are not limited thereto. In the formula, * represents a connecting portion with another group.
Figure JPOXMLDOC01-appb-C000006
Figure JPOXMLDOC01-appb-C000006
 構成単位(a2)は、1つの構成単位中に架橋性基を少なくとも1個有していればよく、1~3個有していることが好ましく、1個がより好ましい。構成単位(a2)が架橋性基を複数有する場合は、すべて同一種類であってもよく、異なる種類であってもよい。架橋性基を複数含む場合は、同一の種類であることが好ましい。 The structural unit (a2) may have at least one crosslinkable group in one structural unit, preferably 1 to 3 and more preferably 1. When the structural unit (a2) has a plurality of crosslinkable groups, they may all be of the same type or different types. When a plurality of crosslinkable groups are included, the same kind is preferable.
 構成単位(a2)としては、下記一般式(a2’)で表される構成単位が挙げられる。 Examples of the structural unit (a2) include structural units represented by the following general formula (a2 ′).
Figure JPOXMLDOC01-appb-C000007
Figure JPOXMLDOC01-appb-C000007
 一般式(a2’)中、aは0または1を表し、Rは、アルキル基、アリール基またはアラルキル基を表し、Lは、単結合、または、2価の連結基を表し、Xは架橋性基を表す。 In general formula (a2 ′), a represents 0 or 1, R 5 represents an alkyl group, an aryl group or an aralkyl group, L 3 represents a single bond or a divalent linking group, and X represents Represents a crosslinkable group.
 構成単位(a2)は、硬化膜特性の観点から、下記一般式(a2-1)で表される構成単位、および/または、下記一般式(a2-2)で表される構成単位であることが好ましい。 The structural unit (a2) is a structural unit represented by the following general formula (a2-1) and / or a structural unit represented by the following general formula (a2-2) from the viewpoint of cured film properties. Is preferred.
Figure JPOXMLDOC01-appb-C000008
Figure JPOXMLDOC01-appb-C000008
 一般式(a2-1)、(a2-2)中、aは0または1を表し、Rは、アルキル基、アリール基またはアラルキル基を表し、Rは、アルキル基またはハロゲン原子を表し、Lは、単結合、または、2価の連結基を表し、nは、0または1を表し、m2は、nが0の場合は0~2の整数を表し、nが1の場合は0~3の整数を表し、m3は、0~6の整数を表す。 In general formulas (a2-1) and (a2-2), a represents 0 or 1, R 5 represents an alkyl group, an aryl group or an aralkyl group, R y represents an alkyl group or a halogen atom, L 3 represents a single bond or a divalent linking group, n represents 0 or 1, m 2 represents an integer of 0 to 2 when n is 0, and 0 when n is 1. Represents an integer from 3 to 3, and m3 represents an integer from 0 to 6.
 Rは、アルキル基、アリール基またはアラルキル基を表す。アルキル基、アリール基、アラルキル基としては、上述した(a1-1)及び(a1-2)のRで説明した範囲と同様であり、好ましい範囲も同様である。
 Lは、単結合、または、2価の連結基を表す。2価の連結基としては、(a1-1)のL及び(a1-2)のLで説明した範囲と同様であり、好ましい範囲も同様である。
 Rは、アルキル基またはハロゲン原子を表す。アルキル基、および、ハロゲン原子としては、上述した(a1-2)のRで説明した範囲と同様であり、好ましい範囲も同様である。
 nは、0または1を表し、0が好ましい。
 m2は、nが0の場合は0~2の整数を表し、nが1の場合は0~3の整数を表す。m2は0が好ましい。
 m3は、0~6の整数を表し、0が好ましい。
R 5 represents an alkyl group, an aryl group, or an aralkyl group. The alkyl group, aryl group and aralkyl group are the same as the ranges described for R 4 in the above (a1-1) and (a1-2), and the preferred ranges are also the same.
L 3 represents a single bond or a divalent linking group. The divalent linking group is the same as the range described for L 1 of (a1-1) and L 2 of (a1-2), and the preferred range is also the same.
R y represents an alkyl group or a halogen atom. The alkyl group and the halogen atom are the same as the range described for R x in (a1-2) described above, and the preferred range is also the same.
n represents 0 or 1, and 0 is preferable.
m2 represents an integer of 0 to 2 when n is 0, and represents an integer of 0 to 3 when n is 1. m2 is preferably 0.
m3 represents an integer of 0 to 6, and 0 is preferable.
 構成単位(a2)を得るために使用できるシランの具体例としては、3-メタクリロキシプロピルメチルジメトキシシラン、3-メタクリロキシプロピルトリメトキシシラン、3-メタクリロキシプロピルメチルジエトキシシラン、3-メタクリロキシプロピルトリエトキシシラン、3-アクリロキシプロピルトリメトキシシラン、ビニルトリメトキシシラン、ビニルトリエトキシシラン、3-グリシドキシプロピルメチルジエトキシシラン、3-グリシドキシプロピルトリエトキシシランなどを挙げることができる。また、以下に示すシラン化合物を用いることもできる。 Specific examples of silanes that can be used to obtain the structural unit (a2) include 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, and 3-methacryloxy. Mention may be made of propyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, etc. . Moreover, the silane compound shown below can also be used.
Figure JPOXMLDOC01-appb-C000009
Figure JPOXMLDOC01-appb-C000009
<<<酸基を有する構成単位(a3)>>>
 (A)ポリシロキサン成分は、酸基を有する構成単位(a3)を含んでいてもよい。構成単位(a3)は、構成単位(a1)および構成単位(a2)から選ばれる少なくとも一つの構成単位を有するポリシロキサンが含んでいてもよい。また、構成単位(a1)および構成単位(a2)を実質的に含まないポリシロキサンが含んでいてもよい。
 具体的な酸基としては、カルボキシ基、スルホンアミド基、ホスホニル基、スルホニル基、フェノール性水酸基、スルホンアミド基、スルホニルイミド基が例示され、好ましい酸基としては、カルボキシ基、およびフェノール性水酸基が挙げられる。
 酸基を有する構成単位(a3)としては、例えば、以下の一般式(a3-1)で表される構造、および/または、一般式(a3-2)で表される構造が好ましい具体例として挙げられる。
<<< Structural Unit (a3) Having Acid Group >>>
(A) The polysiloxane component may contain the structural unit (a3) having an acid group. The structural unit (a3) may contain a polysiloxane having at least one structural unit selected from the structural unit (a1) and the structural unit (a2). Moreover, the polysiloxane which does not contain a structural unit (a1) and a structural unit (a2) substantially may be contained.
Specific examples of the acid group include a carboxy group, a sulfonamide group, a phosphonyl group, a sulfonyl group, a phenolic hydroxyl group, a sulfonamide group, and a sulfonylimide group. Preferred acid groups include a carboxy group and a phenolic hydroxyl group. Can be mentioned.
As the structural unit (a3) having an acid group, for example, a structure represented by the following general formula (a3-1) and / or a structure represented by the general formula (a3-2) are preferable specific examples. Can be mentioned.
Figure JPOXMLDOC01-appb-C000010
Figure JPOXMLDOC01-appb-C000010
 (一般式(a3-1)、(a3-2)中、aは0または1を表し、Rは、アルキル基、アリール基、または、アラルキル基を表し、Lは、単結合または2価の連結基を表し、Lは、単結合または2価の連結基を表し、Rは、アルキル基またはハロゲン原子を表し、m4は、0~4の整数を表す。) (In the general formulas (a3-1) and (a3-2), a represents 0 or 1, R 6 represents an alkyl group, an aryl group, or an aralkyl group, and L 4 represents a single bond or a divalent group. L 5 represents a single bond or a divalent linking group, R z represents an alkyl group or a halogen atom, and m4 represents an integer of 0 to 4.)
 Rは、アルキル基、アリール基、または、アラルキル基を表す。アルキル基、アリール基、アラルキル基としては、上述した(a1-1)及び(a1-2)のRで説明した範囲と同様であり、好ましい範囲も同様である。
 Lは、単結合、または、2価の連結基を表す。2価の連結基としては、(a1-1)のLで説明した範囲と同様であり、好ましい範囲も同様である。
 Lは、単結合、または、2価の連結基を表す。2価の連結基としては、(a1-2)のLで説明した範囲と同様であり、好ましい範囲も同様である。
 Rは、アルキル基またはハロゲン原子を表す。アルキル基、および、ハロゲン原子としては、上述した(a1-2)のRで説明した範囲と同様であり、好ましい範囲も同様である。
 m4は、0~4の整数を表し、0~2が好ましく、0~1がより好ましく、0が最も好ましい。
R 6 represents an alkyl group, an aryl group, or an aralkyl group. The alkyl group, aryl group and aralkyl group are the same as the ranges described for R 4 in the above (a1-1) and (a1-2), and the preferred ranges are also the same.
L 4 represents a single bond or a divalent linking group. The divalent linking group is the same as the range described for L 1 in (a1-1), and the preferred range is also the same.
L 5 represents a single bond or a divalent linking group. The divalent linking group is the same as the range described for L 2 in (a1-2), and the preferred range is also the same.
R z represents an alkyl group or a halogen atom. The alkyl group and the halogen atom are the same as the range described for R x in (a1-2) described above, and the preferred range is also the same.
m4 represents an integer of 0 to 4, preferably 0 to 2, more preferably 0 to 1, and most preferably 0.
 上記一般式(a3-2)で表される構成単位は、下記一般式(a3-2-1)で表される構成単位であることが好ましい。 The structural unit represented by the general formula (a3-2) is preferably a structural unit represented by the following general formula (a3-2-1).
Figure JPOXMLDOC01-appb-C000011
Figure JPOXMLDOC01-appb-C000011
 一般式(a3-2-1)中、aは0または1を表し、Rは、アルキル基、アリール基、または、アラルキル基を表し、Lは、単結合または2価の連結基を表し、Rは、アルキル基またはハロゲン原子を表し、m4は、0~4の整数を表す。 In general formula (a3-2-1), a represents 0 or 1, R 6 represents an alkyl group, an aryl group, or an aralkyl group, and L 5 represents a single bond or a divalent linking group. , R z represents an alkyl group or a halogen atom, and m4 represents an integer of 0-4.
 構成単位(a3)を得るために使用できるシラン化合物としては、構成単位(a1)を得るために使用できるシラン化合物と同様のものを使用できる。 As the silane compound that can be used to obtain the structural unit (a3), the same silane compound that can be used to obtain the structural unit (a1) can be used.
<<<(a1)~(a3)以外の構成単位(a4)>>>
 ポリシロキサン成分は、上述した構成単位(a1)~(a3)以外の構成単位(a4)を含むことができる。
 構成単位(a4)としては、例えば、以下の一般式(a4-1)で表される構造が好ましい具体例として挙げられる。
<<< Structural Unit (a4) Other than (a1) to (a3) >>>
The polysiloxane component can contain a structural unit (a4) other than the structural units (a1) to (a3) described above.
As the structural unit (a4), for example, a structure represented by general formula (a4-1) shown below is preferred.
Figure JPOXMLDOC01-appb-C000012
Figure JPOXMLDOC01-appb-C000012
 一般式(a4-1)中、aは0~3の整数を表し、bは0~3の整数を表す。ただし0≦a+b≦3である。RおよびRは、それぞれ独立に、アルキル基、アリール基、または、アラルキル基を表す。
 R、Rが示すアルキル基、アリール基、アラルキル基としては、上述した(a1-1)及び(a1-2)のRで説明した範囲と同様であり、好ましい範囲も同様である。
In general formula (a4-1), a represents an integer of 0 to 3, and b represents an integer of 0 to 3. However, 0 ≦ a + b ≦ 3. R 7 and R 8 each independently represents an alkyl group, an aryl group, or an aralkyl group.
The alkyl group, aryl group and aralkyl group represented by R 7 and R 8 are the same as the ranges described for R 4 in (a1-1) and (a1-2) described above, and the preferred ranges are also the same.
 構成単位(a4)を得るために使用できるシラン化合物としては、アルコキシシラン化合物、クロロシラン化合物などが挙られる。具体的には、メチルトリエトキシシラン、ジメチルジエトキシシラン、フェニルトリエトキシシラン、フェニルトリメトキシシラン、ヘキシルトリエトキシシラン、デシルトリメトキシシラン、トリフルオロプロピルトリメトキシシランなどを挙げることができる。また、以下に示すシラン化合物を用いることもできる。 Examples of silane compounds that can be used to obtain the structural unit (a4) include alkoxysilane compounds and chlorosilane compounds. Specific examples include methyltriethoxysilane, dimethyldiethoxysilane, phenyltriethoxysilane, phenyltrimethoxysilane, hexyltriethoxysilane, decyltrimethoxysilane, and trifluoropropyltrimethoxysilane. Moreover, the silane compound shown below can also be used.
Figure JPOXMLDOC01-appb-C000013
Figure JPOXMLDOC01-appb-C000013
 (A)ポリシロキサン成分は、感光性樹脂組成物に含まれるポリシロキサン全量中、構成単位(a1)のモル数および構成単位(a3)のモル数の合計と、構成単位(a2)のモル数の比が、10:90~90:10であることが好ましく30:70~70:30であることがより好ましく、40:60~60:40であることが更に好ましい。構成単位(a1)のモル数および構成単位(a3)のモル数の合計と、構成単位(a2)のモル数との比が上記範囲であれば、溶剤耐性に優れた硬化膜を形成できる。 (A) The polysiloxane component is the total number of moles of the structural unit (a1) and the moles of the structural unit (a3) and the number of moles of the structural unit (a2) in the total amount of polysiloxane contained in the photosensitive resin composition. The ratio is preferably 10:90 to 90:10, more preferably 30:70 to 70:30, and still more preferably 40:60 to 60:40. If the ratio between the total number of moles of the structural unit (a1) and the moles of the structural unit (a3) and the mole number of the structural unit (a2) is in the above range, a cured film having excellent solvent resistance can be formed.
 (A)ポリシロキサン成分に含まれるポリシロキサンは、ポリシロキサンの重合時に残ったシラノール基を含んでいてもよい。ポリシロキサン全量中のシラノール基の数は、ポリシロキサン中のSi原子数に対して0~0.5倍が好ましく、0~0.2倍が好ましく、0~0.05倍が最も好ましい。シラノール基の数が上記範囲であれば、感光性樹脂組成物の保存安定性が良好である。なお、ここでいうポリシロキサン全量中のシラノール基の数とは、ポリシロキサン成分に含まるポリシロキサンが有するシラノール基の数の合計値を意味する。Si原子数についても同様である。 (A) The polysiloxane contained in the polysiloxane component may contain silanol groups remaining during polymerization of the polysiloxane. The number of silanol groups in the total amount of polysiloxane is preferably 0 to 0.5 times, more preferably 0 to 0.2 times, and most preferably 0 to 0.05 times the number of Si atoms in the polysiloxane. When the number of silanol groups is in the above range, the storage stability of the photosensitive resin composition is good. The number of silanol groups in the total amount of polysiloxane here means the total number of silanol groups of the polysiloxane contained in the polysiloxane component. The same applies to the number of Si atoms.
 ポリシロキサンは、各構成単位に対応するシラン化合物や、オリゴシロキサンを混合および反応させることによって得られる。例えば対応するトリメトキシシランやジメトキシシランを加水分解、縮合させることによって得られる。加水分解、縮合は公知の方法、条件で適宜行うことができる。例えば、特開平10-324748号公報(特に0085段落~0087段落)、特開2005-283991号公報(特に0052段落~054段落)、特開2006ー276598号公報(特に0009段落~0030段落)等に記載された手順や条件を参考にすることができる。
 上述した構成単位(a1)の酸分解性基は、保護されたシラン化合物を用いて導入してもよいし、高分子反応で導入してもよい。
 なお、特開平10-324748号公報(特に0085段落~0087段落)に記載のように、(A)ポリシロキサンに、カルボキシ基を含む構成単位を導入する場合には、対応するカルボン酸のアルキルエステルを有するシランを用いてポリシロキサンを合成し、アルキルエステルを一般的な方法で加水分解してカルボキシ基を有する構成単位を得ることが好ましい。
 また、ポリシロキサンに、カルボキシ基が酸分解性基で保護された基を有する構成単位を導入するには、カルボキシ基を有する構成を有するポリシロキサンを合成後、所謂高分子反応で酸分解性基を導入してカルボキシ基を保護することが好ましい。
 また、ポリシロキサンに、フェノール性水酸基が酸分解性基で保護された基を有する構成単位を導入するには、フェノール性水酸基を有するポリシロキサンを合成後、所謂高分子反応で、酸分解性基を導入してフェノール性水酸基を保護することが好ましい。
The polysiloxane can be obtained by mixing and reacting a silane compound corresponding to each structural unit or oligosiloxane. For example, it can be obtained by hydrolysis and condensation of the corresponding trimethoxysilane or dimethoxysilane. Hydrolysis and condensation can be appropriately performed by known methods and conditions. For example, Japanese Patent Application Laid-Open No. 10-324748 (especially 0085 paragraph to 0087 paragraph), Japanese Patent Application Laid-Open No. 2005-283939 (particularly 0052 paragraph to 054 paragraph), Japanese Patent Application Laid-Open No. 2006-276598 (particularly 0009 paragraph to 0030 paragraph), etc. The procedures and conditions described in can be referred to.
The acid-decomposable group of the structural unit (a1) described above may be introduced using a protected silane compound or may be introduced by a polymer reaction.
As described in JP-A-10-324748 (particularly paragraphs 0085 to 0087), when a structural unit containing a carboxy group is introduced into (A) polysiloxane, the corresponding alkyl ester of carboxylic acid is used. It is preferable to synthesize a polysiloxane using a silane having an alkyl group and hydrolyze the alkyl ester by a general method to obtain a structural unit having a carboxy group.
In order to introduce a structural unit having a carboxy group protected with an acid-decomposable group into polysiloxane, after synthesizing a polysiloxane having a structure having a carboxy group, an acid-decomposable group is formed by a so-called polymer reaction. It is preferable to introduce carboxy to protect the carboxy group.
In order to introduce a structural unit having a group in which a phenolic hydroxyl group is protected with an acid-decomposable group into polysiloxane, after synthesizing a polysiloxane having a phenolic hydroxyl group, a so-called polymer reaction is performed to produce an acid-decomposable group. It is preferable to protect the phenolic hydroxyl group by introducing.
 以下に、(A)ポリシロキサン成分の好ましい実施形態を挙げるが、本発明はこれらに限定されるものではない。
(第1の実施形態)
 上述した(1)の態様において、構成単位(a1)および構成単位(a2)を有するポリシロキサン(A1)が、さらに、構成単位(a3)および/または構成単位(a4)を有する態様。
(第2の実施形態)
 上述した(2)の態様において、構成単位(a1)を有するポリシロキサン(A2)が、さらに、構成単位(a3)および/または構成単位(a4)を有する態様。
(第3の実施形態)
 上述した(2)の態様において、構成単位(a2)を有するポリシロキサン(A3)が、さらに、構成単位(a3)および/または構成単位(a4)を有する態様。
(第4の実施形態)
 上記第1~第3の実施形態のいずれかにおいて、少なくとも構成単位(a3)を含む態様。
(第5の実施形態)
 上述した(1)および/または(2)の態様において、実質的に構成単位(a1)および構成単位(a2)を含まずに、構成単位(a3)および/または構成単位(a4)を有するポリシロキサンを有する態様。
(第6の実施形態)
 上記第1~第5の実施形態の2以上の組み合わせからなる形態。
Hereinafter, preferred embodiments of the (A) polysiloxane component will be described, but the present invention is not limited thereto.
(First embodiment)
In the aspect (1) described above, the polysiloxane (A1) having the structural unit (a1) and the structural unit (a2) further has the structural unit (a3) and / or the structural unit (a4).
(Second Embodiment)
In the aspect (2) described above, the polysiloxane (A2) having the structural unit (a1) further has the structural unit (a3) and / or the structural unit (a4).
(Third embodiment)
In the aspect (2) described above, the polysiloxane (A3) having the structural unit (a2) further has the structural unit (a3) and / or the structural unit (a4).
(Fourth embodiment)
The aspect including at least the structural unit (a3) in any one of the first to third embodiments.
(Fifth embodiment)
In the aspect of (1) and / or (2) described above, a poly having a structural unit (a3) and / or a structural unit (a4) substantially not including the structural unit (a1) and the structural unit (a2). Embodiment with siloxane.
(Sixth embodiment)
A form comprising a combination of two or more of the first to fifth embodiments.
 実質的に構成単位(a1)および構成単位(a2)を含まずに、構成単位(a3)および/または構成単位(a4)を有するポリシロキサンを有する態様においては、構成単位(a1)および/または構成単位(a2)を有するポリシロキサンの合計量と、実質的に構成単位(a1)および構成単位(a2)を含まずに、構成単位(a3)および/または構成単位(a4)を有するポリシロキサンの合計量との質量割合は、99:1~5:95が好ましく、97:3~30:70がより好ましく、95:5~50:50がさらに好ましい。
 また、構成単位(a1)および/または構成単位(a2)を有するポリシロキサンの合計含有量は、ポリシロキサンの全含有量に対して60質量%以上が好ましく、70質量%以上が好ましく、90質量%以上がもっとも好ましい。
 本発明の感光性樹脂組成物における(A)ポリシロキサン成分の含有量は、感光性樹脂組成物の全固形分に対し、60~99質量%が好ましい。上限は、例えば、98質量%以下がより好ましい。下限は、65質量%以上がより好ましく、70質量%以上が更に好ましい。
In the embodiment having the polysiloxane having the structural unit (a3) and / or the structural unit (a4) substantially free of the structural unit (a1) and the structural unit (a2), the structural unit (a1) and / or The total amount of the polysiloxane having the structural unit (a2) and the polysiloxane having the structural unit (a3) and / or the structural unit (a4) substantially not including the structural unit (a1) and the structural unit (a2) The mass ratio with respect to the total amount is preferably 99: 1 to 5:95, more preferably 97: 3 to 30:70, and still more preferably 95: 5 to 50:50.
The total content of the polysiloxane having the structural unit (a1) and / or the structural unit (a2) is preferably 60% by mass or more, preferably 70% by mass or more, and 90% by mass with respect to the total content of the polysiloxane. % Or more is most preferable.
The content of the (A) polysiloxane component in the photosensitive resin composition of the present invention is preferably 60 to 99% by mass with respect to the total solid content of the photosensitive resin composition. The upper limit is more preferably 98% by mass or less, for example. The lower limit is more preferably 65% by mass or more, and still more preferably 70% by mass or more.
<<(B)光酸発生剤(B成分)>>
 本発明の感光性樹脂組成物は、pKaが3以下の酸を発生する光酸発生剤を含有する。光酸発生剤は、pKaが2以下の酸を発生するものが好ましい。なお本発明において、pKaは、基本的に25℃の水中におけるpKaを指す。水中で測定できないものは、測定に適する溶剤に変更し測定したものを指す。具体的には、化学便覧等に記載のpKaが参考にできる。pKaが3以下の酸としては、スルホン酸またはホスホン酸であることが好ましく、スルホン酸であることがより好ましい。
<< (B) Photoacid Generator (B Component) >>
The photosensitive resin composition of the present invention contains a photoacid generator that generates an acid having a pKa of 3 or less. The photoacid generator is preferably one that generates an acid having a pKa of 2 or less. In the present invention, pKa basically refers to pKa in water at 25 ° C. Those that cannot be measured in water refer to those measured after changing to a solvent suitable for measurement. Specifically, the pKa described in the chemical handbook can be referred to. The acid having a pKa of 3 or less is preferably sulfonic acid or phosphonic acid, and more preferably sulfonic acid.
 光酸発生剤は、波長300nm以上、好ましくは波長300~450nmの活性光線に感応し、酸を発生する化合物が好ましいが、その化学構造に制限されるものではない。また、波長300nm以上の活性光線に直接感応しない光酸発生剤についても、増感剤と併用することによって波長300nm以上の活性光線に感応し、酸を発生する化合物であれば、増感剤と組み合わせて好ましく用いることができる。 The photoacid generator is preferably a compound that reacts with actinic rays having a wavelength of 300 nm or more, preferably 300 to 450 nm, and generates an acid, but is not limited to its chemical structure. Further, a photoacid generator that is not directly sensitive to an actinic ray having a wavelength of 300 nm or more can also be used as a sensitizer if it is a compound that reacts with an actinic ray having a wavelength of 300 nm or more and generates an acid when used in combination with a sensitizer. It can be preferably used in combination.
 光酸発生剤の例として、オニウム塩化合物、トリクロロメチル-s-トリアジン類、ジアゾメタン化合物、イミドスルホネート化合物、オキシムスルホネート化合物、および、イミドスルホネート化合物などを挙げることができる。これらの中でも、感度、現像性の観点から、オニウム塩化合物、オキシムスルホネート化合物、およびイミドスルホネート化合物から選ばれる1種以上が好ましく、オキシムスルホネート化合物、および、イミドスルホネート化合物から選ばれる1種以上がより好ましい。光酸発生剤は、1種単独または2種類以上を組み合わせて使用することができる。 Examples of the photoacid generator include onium salt compounds, trichloromethyl-s-triazines, diazomethane compounds, imide sulfonate compounds, oxime sulfonate compounds, and imide sulfonate compounds. Among these, from a sensitivity and developability viewpoint, 1 or more types chosen from an onium salt compound, an oxime sulfonate compound, and an imide sulfonate compound are preferable, and 1 or more types chosen from an oxime sulfonate compound and an imide sulfonate compound are more. preferable. A photo-acid generator can be used individually by 1 type or in combination of 2 or more types.
 トリクロロメチル-s-トリアジン類、ジアリールヨードニウム塩類、トリアリールスルホニウム塩類、第四級アンモニウム塩類、およびジアゾメタン誘導体の具体例としては、特開2011-221494号公報の段落番号0083~0088に記載の化合物が例示できる。 Specific examples of trichloromethyl-s-triazines, diaryliodonium salts, triarylsulfonium salts, quaternary ammonium salts, and diazomethane derivatives include the compounds described in paragraph numbers 0083 to 0088 of JP2011-212494A. It can be illustrated.
 オニウム塩化合物としては、ジフェニルヨードニウム塩、トリアリールスルホニウム塩、スルホニウム塩、ベンゾチアゾニウム塩、テトラヒドロチオフェニウム塩等が挙げられる。下記一般式(1)および/または一般式(2)で表される化合物が好ましい。 Examples of the onium salt compounds include diphenyliodonium salts, triarylsulfonium salts, sulfonium salts, benzothiazonium salts, tetrahydrothiophenium salts, and the like. Compounds represented by the following general formula (1) and / or general formula (2) are preferred.
Figure JPOXMLDOC01-appb-C000014
(式中、R、RおよびRはそれぞれ独立にアルキル基またはアリール基を表し、アルキル基を表す場合、互いに連結し環を形成してもよく、ヘテロ原子を介して環を形成していてもよい。RおよびRはそれぞれ独立にアリール基を表し、Xは共役塩基を表す。)
Figure JPOXMLDOC01-appb-C000014
(In the formula, R 5 , R 6 and R 7 each independently represents an alkyl group or an aryl group, and in the case of representing an alkyl group, they may be linked together to form a ring, R 8 and R 9 each independently represents an aryl group, and X represents a conjugate base.)
 R、RおよびRはそれぞれ独立にアルキル基またはアリール基を表し、アルキル基またはアリール基は置換基を有していてもよい。置換基としては、炭素数1~10のアリール基、炭素数1~10のチオアリール基、炭素数1~10のアルキル基、炭素数1~10のアルコキシ基、炭素数1~10のチオアルコキシ基、ヒドロキシル基、シアノ基、ハロゲン原子(フッ素原子、塩素原子、臭素原子、ヨウ素原子)などが挙げられる。これら置換基は、さらに置換基を有していてもよい。
 一般式(1)中、R、RおよびRがそれぞれ表すアルキル基としては、炭素数1~10のアルキル基が好ましく、炭素数1~6のアルキル基がより好ましく、炭素数1~4のアルキル基がさらに好ましい。アルキル基としては、例えば、メチル基、エチル基、t-ブチル基などが挙げられる。また、一般式(1)中、R、RおよびRのうち、2つ以上がアルキル基の場合、その2つ以上のアルキル基が互いに連結し環を形成してもよく、ヘテロ原子(例えば酸素原子、硫黄原子など)を介して環を形成していてもよい。そのような環形態としては硫黄原子を含んだ形で5員環(チアシクロペンタン)、または6員環(チアシクロヘキサン)が好ましい。アルキル基は、置換基を有していてもよい。
 一般式(1)中、R、RおよびRがそれぞれ表すアリール基としては、炭素数6~15のアリール基が好ましく、炭素数6~10のアリール基がより好ましい。アリール基は、置換基を有していてもよい。アリール基としては、フェニル基、ナフチル基、4-メトキシフェニル基、4-クロロフェニル基、4-メチルフェニル基、4-ターシャリーブチルフェニル基、4-フェニルチオフェニル基、2,4,6-トリメチルフェニル基、4-メトキシ-1-ナフチル基が挙げられる。中でも、フェニル基、4-メトキシフェニル基、4-クロロフェニル基が好ましい。
 R、RおよびRはアリール基であることが好ましく、同一の基を表すことが好ましい。
R 5 , R 6 and R 7 each independently represents an alkyl group or an aryl group, and the alkyl group or aryl group may have a substituent. Examples of the substituent include an aryl group having 1 to 10 carbon atoms, a thioaryl group having 1 to 10 carbon atoms, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and a thioalkoxy group having 1 to 10 carbon atoms. , Hydroxyl group, cyano group, halogen atom (fluorine atom, chlorine atom, bromine atom, iodine atom) and the like. These substituents may further have a substituent.
In general formula (1), the alkyl groups represented by R 5 , R 6 and R 7 are each preferably an alkyl group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and 1 to More preferred is an alkyl group of 4. Examples of the alkyl group include a methyl group, an ethyl group, and a t-butyl group. In the general formula (1), when two or more of R 5 , R 6 and R 7 are alkyl groups, the two or more alkyl groups may be linked to each other to form a ring, and a hetero atom A ring may be formed via (for example, an oxygen atom, a sulfur atom, etc.). Such a ring form is preferably a 5-membered ring (thiacyclopentane) or a 6-membered ring (thiacyclohexane) containing a sulfur atom. The alkyl group may have a substituent.
In the general formula (1), the aryl group represented by R 5 , R 6 and R 7 is preferably an aryl group having 6 to 15 carbon atoms, and more preferably an aryl group having 6 to 10 carbon atoms. The aryl group may have a substituent. Aryl groups include phenyl, naphthyl, 4-methoxyphenyl, 4-chlorophenyl, 4-methylphenyl, 4-tertiarybutylphenyl, 4-phenylthiophenyl, 2,4,6-trimethyl. Examples thereof include a phenyl group and a 4-methoxy-1-naphthyl group. Of these, a phenyl group, a 4-methoxyphenyl group, and a 4-chlorophenyl group are preferable.
R 5 , R 6 and R 7 are preferably aryl groups, and preferably represent the same group.
 一般式(1)中、Xは共役塩基を表す。共役塩基は、アルキルスルホン酸の共役塩基、アリールスルホン酸の共役塩基、ビスパーフルオロスルホニルアミドの共役塩基を表し、特にアルキルスルホン酸およびアリールスルホン酸の共役塩基が好ましい。そのような共役塩基としては、炭素数1~7のアルキルスルホン酸の共役塩基が好ましく、更に炭素数1~4の共役塩基がより好ましく、酸の形で表記すると例えば、メタンスルホン酸、トリフルオロメタンスルホン酸、n-プロパンスルホン酸、ヘプタンスルホン酸が特に好ましい。アリールスルホン酸の共役塩基としては、酸の形で表記すると例えば、ベンゼンスルホン酸、クロロベンゼンスルホン酸、パラトルエンスルホン酸が特に好ましい。 In the general formula (1), X represents a conjugate base. The conjugate base represents a conjugate base of an alkyl sulfonic acid, a conjugate base of an aryl sulfonic acid, or a conjugate base of a bisperfluorosulfonylamide, and a conjugate base of an alkyl sulfonic acid or an aryl sulfonic acid is particularly preferable. As such a conjugate base, a conjugate base of an alkyl sulfonic acid having 1 to 7 carbon atoms is preferable, and a conjugate base having 1 to 4 carbon atoms is more preferable. When expressed in the form of an acid, for example, methanesulfonic acid, trifluoromethane Particularly preferred are sulfonic acid, n-propanesulfonic acid and heptanesulfonic acid. As the conjugate base of the aryl sulfonic acid, for example, benzene sulfonic acid, chlorobenzene sulfonic acid, and paratoluene sulfonic acid are particularly preferable when expressed in an acid form.
 一般式(2)中、RおよびRがそれぞれ独立に表わすアリール基は、一般式(1)中のR、RおよびRが表わすアリール基と同義であり、好ましい範囲も同様である。
 RおよびRは、具体的にはフェニル基、4-メトキシフェニル基、4-クロロフェニル基が特に好ましい。また、RおよびRは、同一の基を表すことが好ましい。
 一般式(1)中、Xが表わす共役塩基は、一般式(1)中のXと同義であり、好ましい範囲も同様である。
In general formula (2), the aryl groups independently represented by R 8 and R 9 are the same as the aryl groups represented by R 5 , R 6 and R 7 in general formula (1), and the preferred ranges are also the same. is there.
Specifically, R 8 and R 9 are particularly preferably a phenyl group, a 4-methoxyphenyl group, and a 4-chlorophenyl group. R 8 and R 9 preferably represent the same group.
In general formula (1), the conjugate base represented by X has the same meaning as X in general formula (1), and the preferred range is also the same.
 オニウム塩化合物の具体例としては、4,7-ジ-n-ブトキシ-1-ナフチルテトラヒドロチオフェニウムトリフルオロメタンスルホネートなどが挙げられる。また、下記の化合物や、特開2011-232648号公報の段落0083~0085記載の化合物を挙げることができる。 Specific examples of the onium salt compound include 4,7-di-n-butoxy-1-naphthyltetrahydrothiophenium trifluoromethanesulfonate. Moreover, the following compounds and the compounds described in JP-A-2011-232648, paragraphs 0083 to 0085 can be exemplified.
Figure JPOXMLDOC01-appb-C000015
Figure JPOXMLDOC01-appb-C000015
 オキシムスルホネート化合物、すなわち、オキシムスルホネート構造を有する化合物としては、下記一般式(B1)で表されるオキシムスルホネート構造を含有する化合物が好ましく例示できる。 Preferred examples of the oxime sulfonate compound, that is, a compound having an oxime sulfonate structure include compounds having an oxime sulfonate structure represented by the following general formula (B1).
Figure JPOXMLDOC01-appb-C000016
(一般式(B1)中、R21は、アルキル基、または、アリール基を表す。波線は他の基との結合を表す。)
Figure JPOXMLDOC01-appb-C000016
(In the general formula (B1), R 21 represents an alkyl group or an aryl group. A wavy line represents a bond with another group.)
 R21におけるアルキル基、アリール基は、いずれの基も置換されてもよい。R21におけるアルキル基は直鎖状でも分岐状でも環状でもよい。
 R21のアルキル基としては、炭素数1~10の、直鎖状または分岐状アルキル基が好ましい。R21のアルキル基は、ハロゲン原子、炭素数6~11のアリール基、炭素数1~10のアルコキシ基で置換されてもよい。
 R21のアリール基としては、炭素数6~11のアリール基が好ましく、フェニル基またはナフチル基がより好ましい。R21のアリール基は、アルキル基、アルコキシ基あるいはハロゲン原子で置換されてもよい。
Any group of the alkyl group and aryl group in R 21 may be substituted. The alkyl group in R 21 may be linear, branched or cyclic.
The alkyl group for R 21 is preferably a linear or branched alkyl group having 1 to 10 carbon atoms. The alkyl group of R 21 may be substituted with a halogen atom, an aryl group having 6 to 11 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms.
The aryl group for R 21 is preferably an aryl group having 6 to 11 carbon atoms, and more preferably a phenyl group or a naphthyl group. The aryl group of R 21 may be substituted with an alkyl group, an alkoxy group, or a halogen atom.
 オキシムスルホネート化合物の好ましい形態の一例としては、特開2013-190507号公報の段落番号0108~0141の記載が例示され、これらの内容は本明細書に組み込まれる。 As an example of a preferred form of the oxime sulfonate compound, description of paragraph numbers 0108 to 0141 of JP2013-190507A is exemplified, and the contents thereof are incorporated in the present specification.
 上記一般式(B1)で表されるオキシムスルホネート構造を含有する化合物の好ましい態様としては、下記一般式(B1-1)で表されるオキシムスルホネート化合物である。 A preferred embodiment of the compound containing the oxime sulfonate structure represented by the general formula (B1) is an oxime sulfonate compound represented by the following general formula (B1-1).
一般式(B1-1)
Figure JPOXMLDOC01-appb-C000017
(式(B1-1)中、R42は、置換されていても良いアルキル基またはアリール基を表し、Xは、アルキル基、アルコキシ基、または、ハロゲン原子を表し、m4は、0~3の整数を表し、m4が2または3であるとき、複数のXは同一でも異なっていてもよい。)
General formula (B1-1)
Figure JPOXMLDOC01-appb-C000017
(In Formula (B1-1), R 42 represents an optionally substituted alkyl group or aryl group, X represents an alkyl group, an alkoxy group, or a halogen atom, and m4 represents 0-3. Represents an integer, and when m4 is 2 or 3, a plurality of Xs may be the same or different.
 R42の好ましい範囲としては、上記R21の好ましい範囲と同一である。
 Xとしてのアルキル基は、炭素数1~4の直鎖状または分岐状アルキル基が好ましい。
 Xとしてのアルコキシ基は、炭素数1~4の直鎖状または分岐状アルコキシ基が好ましい。
 Xとしてのハロゲン原子は、塩素原子またはフッ素原子が好ましい。
 m4は、0または1が好ましい。上記一般式(B1-1)中、m4が1であり、Xがメチル基であり、Xの置換位置がオルト位であり、R42が炭素数1~10の直鎖状アルキル基、7,7-ジメチル-2-オキソノルボルニルメチル基、またはp-トルイル基である化合物が特に好ましい。
Preferred ranges of R 42, the same as the preferable range of the R 21.
The alkyl group as X is preferably a linear or branched alkyl group having 1 to 4 carbon atoms.
The alkoxy group as X is preferably a linear or branched alkoxy group having 1 to 4 carbon atoms.
The halogen atom as X is preferably a chlorine atom or a fluorine atom.
m4 is preferably 0 or 1. In the above general formula (B1-1), m4 is 1, X is a methyl group, the substitution position of X is the ortho position, R 42 is a linear alkyl group having 1 to 10 carbon atoms, 7, A compound which is a 7-dimethyl-2-oxonorbornylmethyl group or a p-toluyl group is particularly preferred.
 一般式(B1-1)で表されるオキシムスルホネート化合物の具体例としては、例えば、以下の化合物が例示できる。 Specific examples of the oxime sulfonate compound represented by the general formula (B1-1) include the following compounds.
Figure JPOXMLDOC01-appb-C000018
Figure JPOXMLDOC01-appb-C000018
 上記一般式(B1)で表されるオキシムスルホネート構造を含有する化合物の他の好ましい態様としては、下記一般式(B1-2)で表されるオキシムスルホネート化合物である。 Another preferred embodiment of the compound containing an oxime sulfonate structure represented by the above general formula (B1) is an oxime sulfonate compound represented by the following general formula (B1-2).
一般式(B1-2)
Figure JPOXMLDOC01-appb-C000019
(式(B1-2)中、R43は式(B1-1)におけるR42と同義であり、Xは、ハロゲン原子、水酸基、炭素数1~4のアルキル基、炭素数1~4のアルコキシ基、シアノ基またはニトロ基を表し、n4は0~5の整数を表す。)
General formula (B1-2)
Figure JPOXMLDOC01-appb-C000019
(In the formula (B1-2), R 43 has the same meaning as R 42 in the formula (B1-1), and X 1 represents a halogen atom, a hydroxyl group, an alkyl group having 1 to 4 carbon atoms, or an alkyl group having 1 to 4 carbon atoms. Represents an alkoxy group, a cyano group or a nitro group, and n4 represents an integer of 0 to 5.)
 上記一般式(B1-2)におけるR43としては、メチル基、エチル基、n-プロピル基、n-ブチル基、n-オクチル基、トリフルオロメチル基、ペンタフルオロエチル基、パーフルオロ-n-プロピル基、パーフルオロ-n-ブチル基、p-トリル基、4-クロロフェニル基またはペンタフルオロフェニル基が好ましく、n-オクチル基が特に好ましい。
 Xとしては、炭素数1~5のアルコキシ基が好ましく、メトキシ基がより好ましい。
 n4としては、0~2が好ましく、0~1が特に好ましい。
R 43 in the above general formula (B1-2) is methyl group, ethyl group, n-propyl group, n-butyl group, n-octyl group, trifluoromethyl group, pentafluoroethyl group, perfluoro-n- A propyl group, a perfluoro-n-butyl group, a p-tolyl group, a 4-chlorophenyl group or a pentafluorophenyl group is preferable, and an n-octyl group is particularly preferable.
X 1 is preferably an alkoxy group having 1 to 5 carbon atoms, and more preferably a methoxy group.
n4 is preferably from 0 to 2, particularly preferably from 0 to 1.
 上記一般式(B1-2)で表される化合物の具体例および好ましいオキシムスルホネート化合物の具体例としては、例えば、以下の化合物が例示できる。また、以下に例示する化合物の他にも、特開2012-163937号公報の段落番号0080~0082の記載を参酌でき、この内容は本明細書に組み込まれる。 Specific examples of the compound represented by the general formula (B1-2) and specific examples of preferred oxime sulfonate compounds include the following compounds. In addition to the compounds exemplified below, paragraphs 0080 to 0082 of JP2012-163937A can be referred to, and the contents thereof are incorporated in the present specification.
Figure JPOXMLDOC01-appb-C000020
Figure JPOXMLDOC01-appb-C000020
 上記一般式(B1)で表されるオキシムスルホネート構造を含有する化合物の他の好ましい態様としては、下記一般式(OS-1)で表される化合物である。 Another preferred embodiment of the compound containing an oxime sulfonate structure represented by the above general formula (B1) is a compound represented by the following general formula (OS-1).
Figure JPOXMLDOC01-appb-C000021
Figure JPOXMLDOC01-appb-C000021
 上記一般式(OS-1)中、R101は、水素原子、アルキル基、アルケニル基、アルコキシ基、アルコキシカルボニル基、アシル基、カルバモイル基、スルファモイル基、スルホ基、シアノ基、アリール基、または、ヘテロアリール基を表す。R102は、アルキル基、または、アリール基を表す。
 X101は-O-、-S-、-NH-、-NR105-、-CH-、-CR106H-、または、-CR105107-を表し、R105~R107はアルキル基、または、アリール基を表す。
 R121~R124は、それぞれ独立に、水素原子、ハロゲン原子、アルキル基、アルケニル基、アルコキシ基、アミノ基、アルコキシカルボニル基、アルキルカルボニル基、アリールカルボニル基、アミド基、スルホ基、シアノ基、または、アリール基を表す。R121~R124のうち2つは、それぞれ互いに結合して環を形成してもよい。
 R121~R124としては、水素原子、ハロゲン原子、および、アルキル基が好ましく、また、R121~R124のうち少なくとも2つが互いに結合してアリール基を形成する態様もまた、好ましく挙げられる。中でも、R121~R124がいずれも水素原子である態様が感度の観点から好ましい。
 上述した官能基は、いずれも、さらに置換基を有していてもよい。
In the general formula (OS-1), R 101 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkoxy group, an alkoxycarbonyl group, an acyl group, a carbamoyl group, a sulfamoyl group, a sulfo group, a cyano group, an aryl group, or Represents a heteroaryl group. R 102 represents an alkyl group or an aryl group.
X 101 represents —O—, —S—, —NH—, —NR 105 —, —CH 2 —, —CR 106 H—, or —CR 105 R 107 —, wherein R 105 to R 107 are alkyl groups. Or an aryl group.
R 121 to R 124 each independently represents a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkoxy group, an amino group, an alkoxycarbonyl group, an alkylcarbonyl group, an arylcarbonyl group, an amide group, a sulfo group, a cyano group, Or an aryl group is represented. Two of R 121 to R 124 may be bonded to each other to form a ring.
R 121 to R 124 are preferably a hydrogen atom, a halogen atom, and an alkyl group, and an embodiment in which at least two of R 121 to R 124 are bonded to each other to form an aryl group is also preferred. Among these, an embodiment in which all of R 121 to R 124 are hydrogen atoms is preferable from the viewpoint of sensitivity.
Any of the functional groups described above may further have a substituent.
 上記一般式(OS-1)で表される化合物の具体例としては、特開2011-221494号公報の段落番号0128~0132に記載の化合物(例示化合物b-1~b-34)が挙げられるが、本発明はこれに限定されない。 Specific examples of the compound represented by the general formula (OS-1) include compounds described in paragraph numbers 0128 to 0132 of JP2011-212494A (exemplary compounds b-1 to b-34). However, the present invention is not limited to this.
 一般式(B1)で表されるオキシムスルホネート構造を含有する化合物の他の好ましい態様としては、下記一般式(OS-3)、下記一般式(OS-4)または下記一般式(OS-5)で表されるオキシムスルホネート化合物である。 As another preferred embodiment of the compound containing the oxime sulfonate structure represented by the general formula (B1), the following general formula (OS-3), the following general formula (OS-4) or the following general formula (OS-5) It is an oxime sulfonate compound represented by these.
Figure JPOXMLDOC01-appb-C000022
Figure JPOXMLDOC01-appb-C000022
 一般式(OS-3)~一般式(OS-5)中、R22、R25およびR28はそれぞれ独立にアルキル基、アリール基またはヘテロアリール基を表し、R23、R26およびR29はそれぞれ独立に水素原子、アルキル基、アリール基またはハロゲン原子を表し、R24、R27およびR30はそれぞれ独立にハロゲン原子、アルキル基、アルキルオキシ基、スルホン酸基、アミノスルホニル基またはアルコキシスルホニル基を表し、X~Xはそれぞれ独立に酸素原子または硫黄原子を表し、n~nはそれぞれ独立に1または2を表し、m~mはそれぞれ独立に0~6の整数を表す。) In the general formulas (OS-3) to (OS-5), R 22 , R 25 and R 28 each independently represents an alkyl group, an aryl group or a heteroaryl group, and R 23 , R 26 and R 29 are Each independently represents a hydrogen atom, an alkyl group, an aryl group or a halogen atom, and R 24 , R 27 and R 30 each independently represent a halogen atom, an alkyl group, an alkyloxy group, a sulfonic acid group, an aminosulfonyl group or an alkoxysulfonyl group. X 1 to X 3 each independently represents an oxygen atom or a sulfur atom, n 1 to n 3 each independently represents 1 or 2, and m 1 to m 3 each independently represents an integer of 0 to 6 To express. )
 一般式(OS-3)~(OS-5)については、例えば、特開2012-163937号公報の段落番号0098~0115の記載を参酌でき、この内容は本明細書に組み込まれる。一般式(OS-3)で表される化合物としては、例えば、以下が例示できる。 Regarding the general formulas (OS-3) to (OS-5), for example, the description of paragraph numbers 0098 to 0115 of JP2012-163937A can be referred to, and the contents thereof are incorporated in the present specification. Examples of the compound represented by the general formula (OS-3) include the following.
 また、一般式(B1)で表されるオキシムスルホネート構造を含有する化合物は、例えば、特開2012-163937号公報の段落番号0117に記載されている、一般式(OS-6)~(OS-11)のいずれかで表される化合物であることが特に好ましく、この内容は本明細書に組み込まれる。
 一般式(OS-6)~(OS-11)における好ましい範囲は、特開2011-221494号公報の段落番号0110~0112に記載される(OS-6)~(OS-11)の好ましい範囲と同様である。
In addition, the compound having an oxime sulfonate structure represented by the general formula (B1) is, for example, the general formulas (OS-6) to (OS-) described in paragraph No. 0117 of JP2012-163937A. It is particularly preferable that the compound is represented by any one of 11), the contents of which are incorporated herein.
Preferred ranges in the general formulas (OS-6) to (OS-11) are the preferred ranges of (OS-6) to (OS-11) described in paragraph numbers 0110 to 0112 of JP2011-221494A. It is the same.
 一般式(OS-3)~一般式(OS-5)で表されるオキシムスルホネート化合物の具体例としては、特開2011-221494号公報の段落番号0114~0120に記載の化合物が挙げられるが、本発明は、これらに限定されるものではない。 Specific examples of the oxime sulfonate compounds represented by the general formula (OS-3) to the general formula (OS-5) include compounds described in paragraph numbers 0114 to 0120 of JP2011-221494A. The present invention is not limited to these.
 一般式(B1)で表されるオキシムスルホネート構造を含有する化合物の他の好ましい態様としては、下記一般式(B1-3)で表されるオキシムスルホネート化合物である。 Another preferred embodiment of the compound containing an oxime sulfonate structure represented by the general formula (B1) is an oxime sulfonate compound represented by the following general formula (B1-3).
一般式(B1-3)
Figure JPOXMLDOC01-appb-C000023
General formula (B1-3)
Figure JPOXMLDOC01-appb-C000023
 一般式(B1-3)中、Rは、アルキル基またはアリール基を表し、Rは、アルキル基、アリール基、またはヘテロアリール基を表す。R~Rは、それぞれ、水素原子、アルキル基、アリール基、ハロゲン原子を表す。但し、RとR、RとR、またはRとRが結合して脂環または芳香環を形成してもよい。Xは、-O-または-S-を表す。 In General Formula (B1-3), R 1 represents an alkyl group or an aryl group, and R 2 represents an alkyl group, an aryl group, or a heteroaryl group. R 3 to R 6 each represent a hydrogen atom, an alkyl group, an aryl group, or a halogen atom. However, R 3 and R 4 , R 4 and R 5 , or R 5 and R 6 may be bonded to form an alicyclic ring or an aromatic ring. X represents —O— or —S—.
 Rは、アルキル基またはアリール基を表す。アルキル基は、直鎖状、分岐状、環状が挙げられ、分岐状または環状が好ましい。
 アルキル基の炭素数は、好ましくは3~10である。分岐状のアルキル基の場合、炭素数は3~6が好ましい。環状のアルキル基の場合、炭素数は5~7が好ましい。
 アルキル基の具体例としては、例えば、プロピル基、イソプロピル基、n-ブチル基、s-ブチル基、イソブチル基、tert-ブチル基、ペンチル基、イソペンチル基、ネオペンチル基、1,1-ジメチルプロピル基、ヘキシル基、2-エチルヘキシル基、シクロヘキシル基、オクチル基などが挙げられ、好ましくは、イソプロピル基、tert-ブチル基、ネオペンチル基、シクロヘキシル基である。
 アリール基の炭素数は、好ましくは6~12であり、より好ましくは6~8であり、さらに好ましくは6~7である。アリール基の具体例としては、フェニル基、ナフチル基などが挙げられ、好ましくは、フェニル基である。
 Rが表すアルキル基およびアリール基は、置換基を有していてもよい。置換基としては、例えばハロゲン原子(フッ素原子、クロロ原子、臭素原子、ヨウ素原子)、直鎖、分岐状または環状のアルキル基(例えばメチル基、エチル基、プロピル基など)、アルケニル基、アルキニル基、アリール基、アシル基、アルコキシカルボニル基、アリールオキシカルボニル基、カルバモイル基、シアノ基、カルボキシ基、水酸基、アルコキシ基、アリールオキシ基、アルキルチオ基、アリールチオ基、ヘテロ環オキシ基、アシルオキシ基、アミノ基、ニトロ基、ヒドラジノ基、ヘテロ環基などが挙げられる。また、これらの基によってさらに置換されていてもよい。好ましくは、ハロゲン原子、メチル基である。
R 1 represents an alkyl group or an aryl group. Examples of the alkyl group include linear, branched, and cyclic groups, and branched or cyclic groups are preferable.
The alkyl group preferably has 3 to 10 carbon atoms. In the case of a branched alkyl group, the number of carbon atoms is preferably 3-6. In the case of a cyclic alkyl group, the number of carbon atoms is preferably 5 to 7.
Specific examples of the alkyl group include, for example, propyl group, isopropyl group, n-butyl group, s-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group, 1,1-dimethylpropyl group. Hexyl group, 2-ethylhexyl group, cyclohexyl group, octyl group and the like, preferably isopropyl group, tert-butyl group, neopentyl group, and cyclohexyl group.
The aryl group preferably has 6 to 12 carbon atoms, more preferably 6 to 8 carbon atoms, and still more preferably 6 to 7 carbon atoms. Specific examples of the aryl group include a phenyl group and a naphthyl group, and a phenyl group is preferable.
The alkyl group and aryl group represented by R 1 may have a substituent. Examples of the substituent include a halogen atom (fluorine atom, chloro atom, bromine atom, iodine atom), linear, branched or cyclic alkyl group (eg, methyl group, ethyl group, propyl group), alkenyl group, alkynyl group. , Aryl group, acyl group, alkoxycarbonyl group, aryloxycarbonyl group, carbamoyl group, cyano group, carboxy group, hydroxyl group, alkoxy group, aryloxy group, alkylthio group, arylthio group, heterocyclic oxy group, acyloxy group, amino group , A nitro group, a hydrazino group, a heterocyclic group, and the like. Further, these groups may be further substituted. Preferably, they are a halogen atom and a methyl group.
 本発明の感光性樹脂組成物は、透明性の観点から、Rはアルキル基が好ましく、保存安定性と感度とを両立させる観点から、Rは、炭素数3~6の分岐状のアルキル基、炭素数5~7の環状のアルキル基、または、フェニル基が好ましく、炭素数3~6の分岐状のアルキル基、または炭素数5~7の環状のアルキル基がより好ましい。このようなかさ高い基(特に、かさ高いアルキル基)をRとして採用することにより、透明性をより向上させることが可能になる。
 かさ高い置換基の中でも、イソプロピル基、tert-ブチル基、ネオペンチル基、シクロヘキシル基が好ましく、tert-ブチル基、シクロヘキシル基がより好ましい。
In the photosensitive resin composition of the present invention, R 1 is preferably an alkyl group from the viewpoint of transparency, and R 1 is a branched alkyl group having 3 to 6 carbon atoms from the viewpoint of achieving both storage stability and sensitivity. Group, a cyclic alkyl group having 5 to 7 carbon atoms, or a phenyl group is preferable, and a branched alkyl group having 3 to 6 carbon atoms or a cyclic alkyl group having 5 to 7 carbon atoms is more preferable. By adopting such a bulky group (particularly a bulky alkyl group) as R 1 , the transparency can be further improved.
Among the bulky substituents, an isopropyl group, a tert-butyl group, a neopentyl group, and a cyclohexyl group are preferable, and a tert-butyl group and a cyclohexyl group are more preferable.
 Rは、アルキル基、アリール基、またはヘテロアリール基を表す。Rが表すアルキル基としては、炭素数1~10の、直鎖状、分岐状または環状のアルキル基が好ましい。アルキル基としては、例えば、メチル基、エチル基、プロピル基、イソプロピル基、n-ブチル基、tert-ブチル基、ペンチル基、ネオペンチル基、ヘキシル基、シクロヘキシル基などが挙げられ、好ましくは、メチル基である。
 アリール基としては、炭素数6~10のアリール基が好ましい。アリール基としては、フェニル基、ナフチル基、p-トルイル基(p-メチルフェニル基)などが挙げられ、好ましくは、フェニル基、p-トルイル基である。
 ヘテロアリール基としては、例えば、ピロール基、インドール基、カルバゾール基、フラン基、チオフェン基などが挙げられる。
 Rが表すアルキル基、アリール基、およびヘテロアリール基は、置換基を有していてもよい。置換基としては、Rが表すアルキル基およびアリール基が有していてもよい置換基と同義である。
 Rは、アルキル基またはアリール基が好ましく、アリール基がより好ましく、フェニル基がより好ましい。フェニル基の置換基としてはメチル基が好ましい。
R 2 represents an alkyl group, an aryl group, or a heteroaryl group. The alkyl group represented by R 2 is preferably a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a tert-butyl group, a pentyl group, a neopentyl group, a hexyl group, and a cyclohexyl group, and preferably a methyl group It is.
As the aryl group, an aryl group having 6 to 10 carbon atoms is preferable. Examples of the aryl group include a phenyl group, a naphthyl group, and a p-toluyl group (p-methylphenyl group), and a phenyl group and a p-toluyl group are preferable.
Examples of the heteroaryl group include a pyrrole group, an indole group, a carbazole group, a furan group, and a thiophene group.
The alkyl group, aryl group, and heteroaryl group represented by R 2 may have a substituent. Examples of the substituent include an alkyl group and an aryl group R 1 represents is same as the substituents which may be possessed.
R 2 is preferably an alkyl group or an aryl group, more preferably an aryl group, and more preferably a phenyl group. As the substituent for the phenyl group, a methyl group is preferred.
 R~Rは、それぞれ、水素原子、アルキル基、アリール基、またはハロゲン原子(フッ素原子、クロロ原子、臭素原子、ヨウ素原子)を表す。R~Rが表すアルキル基としては、Rが表すアルキル基と同義であり、好ましい範囲も同様である。また、R~Rが表すアリール基としては、Rが表すアリール基と同義であり、好ましい範囲も同様である。
 R~Rのうち、RとR、RとR、またはRとRが結合して環を形成してもよく、環としては、脂環または芳香環を形成していることが好ましく、ベンゼン環がより好ましい。
 R~Rは、水素原子、アルキル基、ハロゲン原子(フッ素原子、クロロ原子、臭素原子)、または、RとR、RとR、またはRとRが結合してベンゼン環を構成していることが好ましく、水素原子、メチル基、フッ素原子、クロロ原子、臭素原子またはRとR、RとR、またはRとRが結合してベンゼン環を構成していることがより好ましい。
 R~Rの好ましい態様は以下の通りである。
(態様1)少なくとも2つは水素原子である。
(態様2)アルキル基、アリール基、またはハロゲン原子の数は、1つ以下である。
(態様3)RとR、RとR、またはRとRが結合してベンゼン環を構成している。
(態様4)上記態様1と2を満たす態様、および/または、上記態様1と3を満たす態様。
R 3 to R 6 each represent a hydrogen atom, an alkyl group, an aryl group, or a halogen atom (a fluorine atom, a chloro atom, a bromine atom, or an iodine atom). The alkyl group represented by R 3 to R 6 has the same meaning as the alkyl group represented by R 2 , and the preferred range is also the same. The aryl group represented by R 3 to R 6 has the same meaning as the aryl group represented by R 1 , and the preferred range is also the same.
Among R 3 to R 6 , R 3 and R 4 , R 4 and R 5 , or R 5 and R 6 may combine to form a ring, and the ring forms an alicyclic ring or an aromatic ring. It is preferable that a benzene ring is more preferable.
R 3 to R 6 are a hydrogen atom, an alkyl group, a halogen atom (fluorine atom, chloro atom, bromine atom), or R 3 and R 4 , R 4 and R 5 , or R 5 and R 6 It preferably constitutes a benzene ring, and a hydrogen atom, a methyl group, a fluorine atom, a chloro atom, a bromine atom, or R 3 and R 4 , R 4 and R 5 , or R 5 and R 6 are bonded to form a benzene ring Is more preferable.
Preferred embodiments of R 3 to R 6 are as follows.
(Aspect 1) At least two are hydrogen atoms.
(Aspect 2) The number of alkyl groups, aryl groups, or halogen atoms is one or less.
(Aspect 3) R 3 and R 4 , R 4 and R 5 , or R 5 and R 6 are combined to form a benzene ring.
(Aspect 4) An aspect satisfying the above aspects 1 and 2 and / or an aspect satisfying the above aspects 1 and 3.
 上記一般式(B1-3)の具体例としては、以下のような化合物が挙げられるが、本発明では特にこれに限定されない。なお、例示化合物中、Tsはトシル基(p-トルエンスルホニル基)を表し、Meはメチル基を表し、Buはn-ブチル基を表し、Phはフェニル基を表す。 Specific examples of the general formula (B1-3) include the following compounds, but the present invention is not particularly limited thereto. In the exemplified compounds, Ts represents a tosyl group (p-toluenesulfonyl group), Me represents a methyl group, Bu represents an n-butyl group, and Ph represents a phenyl group.
Figure JPOXMLDOC01-appb-C000024
Figure JPOXMLDOC01-appb-C000024
 イミドスルホネート化合物としては、下記一般式(B2)で表される構造を有するイミドスルホネート化合物を好ましく用いることができる。 As the imide sulfonate compound, an imide sulfonate compound having a structure represented by the following general formula (B2) can be preferably used.
Figure JPOXMLDOC01-appb-C000025
 (一般式(B2)中、R200は、炭素原子数16以下の1価有機基を表す。波線は他の基との結合を表す。)
Figure JPOXMLDOC01-appb-C000025
(In the general formula (B2), R 200 represents a monovalent organic group having 16 or less carbon atoms. The wavy line represents a bond with another group.)
 R200は、炭素原子数16以下の1価有機基を表す。R200は、C、H、O、F以外を含まないことが好ましい。R200としては、例えば、メチル基、トリフルオロメチル基、プロピル基、フェニル基、トシル基などが挙げられる。
 一般式(B2)で表される構造を含有する化合物の好ましい態様としては、下記一般式(I)で表されるイミドスルホネート化合物である。
R 200 represents a monovalent organic group having 16 or less carbon atoms. R 200 preferably does not contain other than C, H, O, and F. Examples of R 200 include a methyl group, a trifluoromethyl group, a propyl group, a phenyl group, and a tosyl group.
A preferred embodiment of the compound containing the structure represented by the general formula (B2) is an imide sulfonate compound represented by the following general formula (I).
Figure JPOXMLDOC01-appb-C000026
 式中、RおよびRは、それぞれ、下記一般式(A)で表される基または水素原子を表す。Rは、ハロゲン原子、アルキルチオ基および脂環式炭化水素基のいずれか1つ以上で置換されてもよい炭素数1~18の脂肪族炭化水素基、ハロゲン原子、アルキルチオ基、アルキル基およびアシル基のいずれか1つ以上で置換されてもよい炭素数6~20のアリール基、ハロゲン原子および/またはアルキルチオ基で置換されてもよい炭素数7~20のアリールアルキル基、10-カンファーイル基または、下記一般式(B)で表される基を表す。
Figure JPOXMLDOC01-appb-C000026
In the formula, R 1 and R 2 each represent a group represented by the following general formula (A) or a hydrogen atom. R 3 represents an aliphatic hydrocarbon group having 1 to 18 carbon atoms which may be substituted with any one or more of a halogen atom, an alkylthio group and an alicyclic hydrocarbon group, a halogen atom, an alkylthio group, an alkyl group and an acyl An aryl group having 6 to 20 carbon atoms which may be substituted with any one or more of the groups, an arylalkyl group having 7 to 20 carbon atoms which may be substituted with a halogen atom and / or an alkylthio group, 10-camphoryl group Or represents the group represented by the following general formula (B).
Figure JPOXMLDOC01-appb-C000027
 一般式(A)中、Xは、酸素原子または硫黄原子を表し、Yは、単結合または炭素数1~4のアルキレン基を表し、Rは、炭素数1~12の炭化水素基を表し、Rは、炭素数1~4のアルキレン基を表し、Rは、水素原子、分岐していてもよい炭素数1~4のアルキル基、炭素数3~10の脂環式炭化水素基、複素環基、または水酸基を表す。nは、0~5の整数を表し、nが2~5の場合、複数存在するRは同一でも異なってもよい。
Figure JPOXMLDOC01-appb-C000027
In general formula (A), X 1 represents an oxygen atom or a sulfur atom, Y 1 represents a single bond or an alkylene group having 1 to 4 carbon atoms, and R 4 represents a hydrocarbon group having 1 to 12 carbon atoms. R 5 represents an alkylene group having 1 to 4 carbon atoms, R 6 represents a hydrogen atom, an optionally branched alkyl group having 1 to 4 carbon atoms, or an alicyclic carbon atom having 3 to 10 carbon atoms. Represents a hydrogen group, a heterocyclic group, or a hydroxyl group. n represents an integer of 0 to 5. When n is 2 to 5, a plurality of R 5 may be the same or different.
 式中、Xは、酸素原子又は硫黄原子を表し、Yは、単結合又は炭素数1~4のアルカンジイル基を表し、R11は、炭素数1~12の炭化水素基を表し、R12は、炭素数1~4のアルカンジイル基を表し、R13は、水素原子又は分岐を有してもよい炭素数1~4のアルキル基又は炭素数3~10の脂環式炭化水素基若しくは複素環基を表し、mは、0~5を表し、mが2~5の場合、複数存在するR12は同一でも異なってもよい。 In the formula, X 1 represents an oxygen atom or a sulfur atom, Y 1 represents a single bond or an alkanediyl group having 1 to 4 carbon atoms, R 11 represents a hydrocarbon group having 1 to 12 carbon atoms, R 12 represents an alkanediyl group having 1 to 4 carbon atoms, R 13 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms which may have a branch or an alicyclic hydrocarbon having 3 to 10 carbon atoms. Represents a group or a heterocyclic group, m represents 0 to 5, and when m is 2 to 5, a plurality of R 12 may be the same or different.
Figure JPOXMLDOC01-appb-C000028
Figure JPOXMLDOC01-appb-C000028
 一般式(B)中、Yは、単結合または炭素数1~4のアルキレン基を表し、Rは、炭素数2~6のアルキレン基、炭素数2~6のハロゲン化アルキレン基、炭素数6~20のアリーレン基、または炭素数6~20のハロゲン化アリーレン基を表し、Rは、単結合、炭素数2~6のアルキレン基、炭素数2~6のハロゲン化アルキレン基、炭素数6~20のアリーレン基または炭素数6~20のハロゲン化アリーレン基を表し、Rは、分岐していてもよい炭素数1~18のアルキル基、分岐していてもよい炭素数1~18のハロゲン化アルキル基、炭素数6~20のアリール基、炭素数6~20のハロゲン化アリール基、炭素数7~20のアリールアルキル基、または炭素数7~20のハロゲン化アリールアルキル基を表す。aおよびbはそれぞれ独立に0または1を表し、aおよびbの少なくとも一方は1である。 In general formula (B), Y 2 represents a single bond or an alkylene group having 1 to 4 carbon atoms, R 7 represents an alkylene group having 2 to 6 carbon atoms, a halogenated alkylene group having 2 to 6 carbon atoms, carbon Represents an arylene group having 6 to 20 carbon atoms, or a halogenated arylene group having 6 to 20 carbon atoms, and R 8 represents a single bond, an alkylene group having 2 to 6 carbon atoms, a halogenated alkylene group having 2 to 6 carbon atoms, carbon Represents an arylene group having 6 to 20 carbon atoms or a halogenated arylene group having 6 to 20 carbon atoms, and R 9 represents an alkyl group having 1 to 18 carbon atoms which may be branched, or 1 to 1 carbon atoms which may be branched. 18 halogenated alkyl groups, aryl groups having 6 to 20 carbon atoms, halogenated aryl groups having 6 to 20 carbon atoms, arylalkyl groups having 7 to 20 carbon atoms, or halogenated arylalkyl groups having 7 to 20 carbon atoms. To express. a and b each independently represents 0 or 1, and at least one of a and b is 1.
 一般式(I)については、例えば、国際公開WO11/087011号公報の段落番号0019~0063の記載を参酌でき、この内容は本明細書に組み込まれる。一般式(I)で表される化合物としては、例えば、以下が例示できる。また、以下に例示する化合物の他にも、国際公開WO11/087011号公報の段落番号0065~0075の記載や特許5510347号公報の段落0084の記載を参酌でき、この内容は本明細書に組み込まれる。 Regarding the general formula (I), for example, the description of paragraph numbers 0019 to 0063 of International Publication No. WO11 / 087011 can be referred to, and the contents thereof are incorporated in the present specification. Examples of the compound represented by the general formula (I) include the following. In addition to the compounds exemplified below, the description of paragraphs 0065 to 0075 of International Publication No. WO11 / 087011 and the description of paragraph 0084 of Japanese Patent No. 5510347 can be taken into account, the contents of which are incorporated herein. .
Figure JPOXMLDOC01-appb-C000029
Figure JPOXMLDOC01-appb-C000029
 本発明の感光性樹脂組成物における(B)光酸発生剤の含有量は、感光性樹脂組成物の全固形分に対し、0.1~10質量%が好ましく、0.5~10質量%がより好ましく、1~5質量%がさらに好ましい。
 また、(B)光酸発生剤は、(A)ポリシロキサン成分100質量部に対し、0.1~10質量部含有することが好ましく、0.5~10質量部がより好ましく、1~5質量部がさらに好ましい。
 (B)光酸発生剤は、1種のみであってもよいし、2種以上を併用することもできる。2種以上併用する場合は、その合計量が上記範囲となることが好ましい。
The content of the (B) photoacid generator in the photosensitive resin composition of the present invention is preferably 0.1 to 10% by mass, and preferably 0.5 to 10% by mass, based on the total solid content of the photosensitive resin composition. Is more preferable, and 1 to 5% by mass is even more preferable.
The (B) photoacid generator is preferably contained in an amount of 0.1 to 10 parts by weight, more preferably 0.5 to 10 parts by weight, based on 100 parts by weight of the (A) polysiloxane component. Part by mass is more preferable.
(B) Only 1 type may be sufficient as a photo-acid generator, and it can also use 2 or more types together. When using 2 or more types together, it is preferable that the total amount becomes the said range.
<<(C)溶剤(C成分)>>
 本発明の感光性樹脂組成物は、溶剤を含有する。本発明の感光性樹脂組成物は、本発明の必須成分と、さらに後述の任意の成分を溶剤に溶解した溶液として調製されることが好ましい。溶剤としては、必須成分及び任意成分を均一に溶解し、各成分と反応しないものが用いられる。
 本発明において溶剤としては、公知の溶剤を用いることができる。例えば、エチレングリコールモノアルキルエーテル類、エチレングリコールジアルキルエーテル類、エチレングリコールモノアルキルエーテルアセテート類、プロピレングリコールモノアルキルエーテル類、プロピレングリコールジアルキルエーテル類、プロピレングリコールモノアルキルエーテルアセテート類、ジエチレングリコールジアルキルエーテル類、ジエチレングリコールモノアルキルエーテルアセテート類、ジプロピレングリコールモノアルキルエーテル類、ジプロピレングリコールジアルキルエーテル類、ジプロピレングリコールモノアルキルエーテルアセテート類、エステル類、ケトン類、アミド類、ラクトン類等が例示できる。また、特開2011-221494号公報の段落番号0174~0178に記載の溶剤、特開2012-194290公報の段落番号0167~0168に記載の溶剤も挙げられ、これらの内容は本明細書に組み込まれる。例えば、溶剤の具体例の一例としては、プロピレングリコール1-モノメチルエーテル2-アセタート、メチルエチルジグリコールなどが挙げられる。
<< (C) Solvent (Component C) >>
The photosensitive resin composition of the present invention contains a solvent. The photosensitive resin composition of the present invention is preferably prepared as a solution in which the essential components of the present invention and further optional components described below are dissolved in a solvent. As the solvent, a solvent that uniformly dissolves essential components and optional components and does not react with each component is used.
In the present invention, a known solvent can be used as the solvent. For example, ethylene glycol monoalkyl ethers, ethylene glycol dialkyl ethers, ethylene glycol monoalkyl ether acetates, propylene glycol monoalkyl ethers, propylene glycol dialkyl ethers, propylene glycol monoalkyl ether acetates, diethylene glycol dialkyl ethers, diethylene glycol Examples thereof include monoalkyl ether acetates, dipropylene glycol monoalkyl ethers, dipropylene glycol dialkyl ethers, dipropylene glycol monoalkyl ether acetates, esters, ketones, amides, and lactones. Further, the solvent described in paragraph Nos. 0174 to 0178 of JP2011-221494A and the solvent described in paragraph numbers 0167 to 0168 of JP2012-194290A are also included, and the contents thereof are incorporated in the present specification. . For example, specific examples of the solvent include propylene glycol 1-monomethyl ether 2-acetate, methyl ethyl diglycol and the like.
 また、これらの溶剤にさらに必要に応じて、ベンジルエチルエーテル、ジヘキシルエーテル、エチレングリコールモノフェニルエーテルアセテート、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、イソホロン、カプロン酸、カプリル酸、1-オクタノール、1-ノナール、ベンジルアルコール、アニソール、酢酸ベンジル、安息香酸エチル、シュウ酸ジエチル、マレイン酸ジエチル、炭酸エチレン、炭酸プロピレン等の溶剤を添加することもできる。これら溶剤は、1種単独でまたは2種以上を混合して使用することができる。本発明に用いることができる溶剤は、1種単独、または、2種を併用することが好ましく、2種を併用することがより好ましく、プロピレングリコールモノアルキルエーテルアセテート類またはジアルキルエーテル類、ジアセテート類とジエチレングリコールジアルキルエーテル類、あるいは、エステル類とブチレングリコールアルキルエーテルアセテート類とを併用することがさらに好ましい。 In addition, benzyl ethyl ether, dihexyl ether, ethylene glycol monophenyl ether acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, isophorone, caproic acid, caprylic acid, 1-octanol, 1-nonal as necessary for these solvents , Benzyl alcohol, anisole, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate, ethylene carbonate, propylene carbonate and the like can also be added. These solvents can be used alone or in combination of two or more. The solvent that can be used in the present invention is a single type or a combination of two types, more preferably a combination of two types, propylene glycol monoalkyl ether acetates or dialkyl ethers, diacetates. And diethylene glycol dialkyl ethers or esters and butylene glycol alkyl ether acetates are more preferably used in combination.
 また、溶剤は、沸点130℃以上160℃未満の溶剤、沸点160℃以上の溶剤、または、これらの混合物であることが好ましい。
 沸点130℃以上160℃未満の溶剤としては、プロピレングリコールモノメチルエーテルアセテート(沸点146℃)、プロピレングリコールモノエチルエーテルアセテート(沸点158℃)、プロピレングリコールメチル-n-ブチルエーテル(沸点155℃)、プロピレングリコールメチル-n-プロピルエーテル(沸点131℃)が例示できる。
 沸点160℃以上の溶剤としては、3-エトキシプロピオン酸エチル(沸点170℃)、ジエチレングリコールメチルエチルエーテル(沸点176℃)、プロピレングリコールモノメチルエーテルプロピオネート(沸点160℃)、ジプロピレングリコールメチルエーテルアセテート(沸点213℃)、3-メトキシブチルエーテルアセテート(沸点171℃)、ジエチレングリコールジエチエルエーテル(沸点189℃)、ジエチレングリコールジメチルエーテル(沸点162℃)、プロピレングリコールジアセテート(沸点190℃)、ジエチレングリコールモノエチルエーテルアセテート(沸点220℃)、ジプロピレングリコールジメチルエーテル(沸点175℃)、1,3-ブチレングリコールジアセテート(沸点232℃)が例示できる。
The solvent is preferably a solvent having a boiling point of 130 ° C. or higher and lower than 160 ° C., a solvent having a boiling point of 160 ° C. or higher, or a mixture thereof.
Solvents having a boiling point of 130 ° C. or higher and lower than 160 ° C. include propylene glycol monomethyl ether acetate (boiling point 146 ° C.), propylene glycol monoethyl ether acetate (boiling point 158 ° C.), propylene glycol methyl-n-butyl ether (boiling point 155 ° C.), propylene glycol An example is methyl-n-propyl ether (boiling point 131 ° C.).
Solvents having a boiling point of 160 ° C or higher include ethyl 3-ethoxypropionate (boiling point 170 ° C), diethylene glycol methyl ethyl ether (boiling point 176 ° C), propylene glycol monomethyl ether propionate (boiling point 160 ° C), dipropylene glycol methyl ether acetate. (Boiling point 213 ° C), 3-methoxybutyl ether acetate (boiling point 171 ° C), diethylene glycol diethyl ether (boiling point 189 ° C), diethylene glycol dimethyl ether (boiling point 162 ° C), propylene glycol diacetate (boiling point 190 ° C), diethylene glycol monoethyl ether acetate (Boiling point 220 ° C), dipropylene glycol dimethyl ether (boiling point 175 ° C), 1,3-butylene glycol diacetate (boiling point 232 ° C) It can be.
 本発明の感光性樹脂組成物における溶剤の含有量は、感光性樹脂組成物中の全成分100質量部に対し、50~95質量部であることが好ましい。55質量%以上がより好ましく、60質量部以上がさらに好ましい。上限は、90質量部以下がより好ましい。溶剤は、1種類のみ用いてもよいし、2種類以上用いてもよい。2種類以上用いる場合は、その合計量が上記範囲となることが好ましい。 The content of the solvent in the photosensitive resin composition of the present invention is preferably 50 to 95 parts by mass with respect to 100 parts by mass of all components in the photosensitive resin composition. 55 mass% or more is more preferable, and 60 mass parts or more is further more preferable. The upper limit is more preferably 90 parts by mass or less. Only one type of solvent may be used, or two or more types may be used. When using 2 or more types, it is preferable that the total amount becomes the said range.
<<(S)ブロックイソシアネート化合物(S成分)>>
 本発明の感光性樹脂組成物は、ブロックイソシアネートを含有する。ブロックイソシアネート化合物を含有することにより、ポリシロキサンの重縮合時に発生した水などを捕捉でき、膜中の含水量を低減できると考えられ、金属の変色を抑制できる。
 ブロックイソシアネート化合物としては、ブロックイソシアネート基を有する化合物であれば特に制限はないが、1分子内に2以上のブロックイソシアネート基を有する化合物であることが好ましい。ブロックイソシアネート基の数の上限は6以下が好ましい。
 なお、本発明において、ブロックイソシアネート化合物とは、上述した(A)ポリシロキサン成分で説明したポリシロキサンとは異なる化合物を指す。
 本発明における「ブロックイソシアネート基」とは、熱によりイソシアネート基を生成することが可能な基を意味し、ブロック剤とイソシアネート基とを反応させイソシアネート基を保護した基が好ましく例示できる。ブロックイソシアネート基は、例えば、90~250℃の熱によりイソシアネート基を生成することが可能な基であることが好ましい。
<< (S) Blocked isocyanate compound (S component) >>
The photosensitive resin composition of the present invention contains a blocked isocyanate. By containing the blocked isocyanate compound, it is considered that water generated during polycondensation of polysiloxane can be captured, and the water content in the film can be reduced, thereby suppressing discoloration of the metal.
The blocked isocyanate compound is not particularly limited as long as it is a compound having a blocked isocyanate group, but is preferably a compound having two or more blocked isocyanate groups in one molecule. The upper limit of the number of blocked isocyanate groups is preferably 6 or less.
In addition, in this invention, a blocked isocyanate compound points out the compound different from the polysiloxane demonstrated by the (A) polysiloxane component mentioned above.
The “block isocyanate group” in the present invention means a group capable of generating an isocyanate group by heat, and a group obtained by reacting a blocking agent with an isocyanate group to protect the isocyanate group can be preferably exemplified. The blocked isocyanate group is preferably a group capable of generating an isocyanate group by heat at 90 to 250 ° C., for example.
 本発明において、ブロックイソシアネート化合物の分子量は、100~2000が好ましい。下限は、150以上がより好ましく、200以上が更に好ましい。上限は、1000以下がより好ましく、以下が更に好ましい。ブロックイソシアネート化合物の分子量が上記範囲であれば、金属の変色を効果的に抑制できる。
 なお、本発明において、ブロックイソシアネート化合物の分子量は、構造式から算出した理論値であり、構造式から算出できない場合は、GPC測定によるポリスチレン換算値による重量平均分子量である。
In the present invention, the molecular weight of the blocked isocyanate compound is preferably 100 to 2000. The lower limit is more preferably 150 or more, and even more preferably 200 or more. The upper limit is more preferably 1000 or less, and still more preferably below. When the molecular weight of the blocked isocyanate compound is in the above range, the discoloration of the metal can be effectively suppressed.
In the present invention, the molecular weight of the blocked isocyanate compound is a theoretical value calculated from the structural formula, and when the molecular weight cannot be calculated from the structural formula, it is a weight average molecular weight based on polystyrene conversion by GPC measurement.
 ブロックイソシアネート化合物の骨格となるイソシアネート化合物は、特に限定されるものではなく、1分子中にイソシアネート基を2個有するものであればどのようなものでもよい。脂肪族、脂環族又は芳香族のポリイソシアネート化合物のいずれであってもよい。具体例としては、例えば、2,4-トリレンジイソシアネート、2,6-トリレンジイソシアネート、イソホロンジイソシアネート、1,6-ヘキサメチレンジイソシアネート、1,3-トリメチレンジイソシアネート、1,4-テトラメチレンジイソシアネート、2,2,4-トリメチルヘキサメチレンジイソシアネート、2,4,4-トリメチルヘキサメチレンジイソシアネート、1,9-ノナメチレンジイソシアネート、1,10-デカメチレンジイソシアネート、1,4-シクロヘキサンジイソシアネート、2,2’-ジエチルエーテルジイソシアネート、ジフェニルメタン-4,4’-ジイソシアネート、o-キシレンジイソシアネート、m-キシレンジイソシアネート、p-キシレンジイソシアネート、メチレンビス(シクロヘキシルイソシアネート)、シクロヘキサン-1,3-ジメチレンジイソシアネート、シクロヘキサン-1,4-ジメチレレンジイソシアネート、1,5-ナフタレンジイソシアネート、p-フェニレンジイソシアネート、3,3’-メチレンジトリレン-4,4’-ジイソシアネート、4,4’-ジフェニルエーテルジイソシアネート、テトラクロロフェニレンジイソシアネート、ノルボルナンジイソシアネート、水素化1,3-キシリレンジイソシアネート、水素化1,4-キシリレンジイソシアネート等のイソシアネート化合物、並びに、これらの多量体、及び、これらの化合物から派生するプレポリマー型の骨格の化合物を好適に用いることができる。
 これらの中でも、トリレンジイソシアネート、ジフェニルメタンジイソシアネート、ヘキサメチレンジイソシアネートおよびイソホロンジイソシアネートから選ばれるイソシアネート化合物、ならびに、これらのイソシアネート化合物の多量体から選ばれる少なくとも1種の化合物のイソシアネート基を、保護したブロックイソシアネート化合物がより好ましい。
 イソシアネート化合物の多量体としては、2量体以上の多量体(好ましくは、2~3量体)であれば特に制限はなく、ビウレット構造、アダクト構造、イソシアヌレート構造等を例示することができ、ビウレット構造が好ましい。
The isocyanate compound serving as the skeleton of the blocked isocyanate compound is not particularly limited, and any compound may be used as long as it has two isocyanate groups in one molecule. Any of aliphatic, alicyclic or aromatic polyisocyanate compounds may be used. Specific examples include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, isophorone diisocyanate, 1,6-hexamethylene diisocyanate, 1,3-trimethylene diisocyanate, 1,4-tetramethylene diisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, 2,4,4-trimethylhexamethylene diisocyanate, 1,9-nonamethylene diisocyanate, 1,10-decamethylene diisocyanate, 1,4-cyclohexane diisocyanate, 2,2'- Diethyl ether diisocyanate, diphenylmethane-4,4′-diisocyanate, o-xylene diisocyanate, m-xylene diisocyanate, p-xylene diisocyanate, methylene bis (cyclohexane Isocyanate), cyclohexane-1,3-dimethylene diisocyanate, cyclohexane-1,4-dimethylene diisocyanate, 1,5-naphthalene diisocyanate, p-phenylene diisocyanate, 3,3'-methylene ditolylene-4,4'- Isocyanate compounds such as diisocyanate, 4,4′-diphenyl ether diisocyanate, tetrachlorophenylene diisocyanate, norbornane diisocyanate, hydrogenated 1,3-xylylene diisocyanate, hydrogenated 1,4-xylylene diisocyanate, and multimers thereof, and Prepolymer type skeleton compounds derived from these compounds can be preferably used.
Among these, blocked isocyanate compounds in which the isocyanate group of at least one compound selected from tolylene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate and isophorone diisocyanate, and a multimer of these isocyanate compounds is protected. Is more preferable.
The isocyanate compound multimer is not particularly limited as long as it is a dimer or higher multimer (preferably a dimer or trimer), and examples thereof include a biuret structure, an adduct structure, and an isocyanurate structure. A biuret structure is preferred.
 ビウレット構造とは、下記式(bi)で表される構造であり、下記式(bi-1)で表される構造であることが好ましく、下記式(bi-2)で表される構造であることがより好ましい。なお、下記式中、波線部分は他の構造との結合部分である。 The biuret structure is a structure represented by the following formula (bi), preferably a structure represented by the following formula (bi-1), and a structure represented by the following formula (bi-2). It is more preferable. In the following formula, the wavy line portion is a portion connected to another structure.
Figure JPOXMLDOC01-appb-C000030
 式(bi-1)及び式(bi-2)中、R、R及びRはそれぞれ独立に、イソシアネート化合物の、イソシアネート基以外の基を表し、R及びRはそれぞれ独立に、水素原子、アルキル基又はアリール基を表す。
Figure JPOXMLDOC01-appb-C000030
In formula (bi-1) and formula (bi-2), R 1 , R 2 and R 3 each independently represent a group other than an isocyanate group of the isocyanate compound, and R 4 and R 5 each independently Represents a hydrogen atom, an alkyl group or an aryl group.
 ビウレット構造の形成方法としては、特に制限はなく、公知の方法により形成すればよいが、例えば、イソシアネート化合物の3量化により容易に形成することができる。 The method for forming the biuret structure is not particularly limited and may be formed by a known method. For example, the biuret structure can be easily formed by trimerization of an isocyanate compound.
 アダクト構造とは、多価アルコールとイソシアネート化合物との付加体のことをいう。
 アダクト構造の形成に用いる、イソシアネート化合物としては、上述したイソシアネート化合物が挙げられ、ジイソシアネート化合物が好ましい。ジイソシアネート化合物の分子量は、100~1000であることが好ましい。
 アダクト構造の形成に用いる多価アルコールとしては、価数の下限としては3価以上であることが好ましく、価数の上限としては6価以下であることが好ましい。分子量としては、50~700の分子量を有するものが好ましく、50~500の分子量を有するものがより好ましい。また脂肪族多価アルコールであることが好ましいく、環状構造を持たない脂肪族多価アルコールであることが好ましい。本発明で用いる多価アルコールとしては、分岐の脂肪族炭化水素基にOH基が3個以上結合した基であることが好ましい。かかる脂肪族炭化水素基の炭素数は、3~30が好ましく、4~20がより好ましい。OH基の数は、3~6個が好ましい。
 具体的には、グリセロール、トリメチロールエタン、トリメチロールプロパン(TMP)、トリメチロールオクタン、1,2,6-ヘキサントリオール、2,4-ジヒドロキシ-3- ヒドロキシメチルペンタン、1,1,1-トリス(ビスヒドロキシメチル)プロパン、2,2-ビス(ヒドロキシメチル)ブタノール等の3価アルコール;ペンタエリスリトール、ジグリセロール等の4価アルコール;アラビット、リビトール、キシリトール等の5価アルコール(ペンチット);ソルビット、マンニット、ガラクチトール、アロズルシット等の6価アルコール(ヘキシット)などが挙げられる。中でも、トリメチロールプロパンおよびペンタエリスリトールが特に好ましい。
 アダクト構造のイソシアネート化合物の市販品としては、例えば、タケネートD-140N、D-212L(以上、三井化学(株)製)などが挙げられる。
The adduct structure refers to an adduct of a polyhydric alcohol and an isocyanate compound.
As an isocyanate compound used for formation of an adduct structure, the isocyanate compound mentioned above is mentioned, A diisocyanate compound is preferable. The molecular weight of the diisocyanate compound is preferably 100 to 1000.
As the polyhydric alcohol used for forming the adduct structure, the lower limit of the valence is preferably 3 or more, and the upper limit of the valence is preferably 6 or less. As the molecular weight, those having a molecular weight of 50 to 700 are preferred, and those having a molecular weight of 50 to 500 are more preferred. Moreover, it is preferable that it is an aliphatic polyhydric alcohol, and it is preferable that it is an aliphatic polyhydric alcohol which does not have a cyclic structure. The polyhydric alcohol used in the present invention is preferably a group in which three or more OH groups are bonded to a branched aliphatic hydrocarbon group. The aliphatic hydrocarbon group preferably has 3 to 30 carbon atoms, more preferably 4 to 20 carbon atoms. The number of OH groups is preferably 3-6.
Specifically, glycerol, trimethylolethane, trimethylolpropane (TMP), trimethyloloctane, 1,2,6-hexanetriol, 2,4-dihydroxy-3-hydroxymethylpentane, 1,1,1-tris Trivalent alcohols such as (bishydroxymethyl) propane and 2,2-bis (hydroxymethyl) butanol; tetrahydric alcohols such as pentaerythritol and diglycerol; pentavalent alcohols such as arabit, ribitol and xylitol (pentit); Examples thereof include hexavalent alcohols (hexit) such as mannit, galactitol, and allozulcit. Of these, trimethylolpropane and pentaerythritol are particularly preferable.
Examples of commercially available isocyanate compounds having an adduct structure include Takenate D-140N and D-212L (manufactured by Mitsui Chemicals, Inc.).
 アダクト構造のブロックイソシアネート化合物は、下記一般式(ad)で表される化合物であることが好ましい。
 Ra-{O(C=O)-NH-Rb-NCO-B}   ・・・(ad)
 一般式(ad)中、Raは、n価の炭化水素基であり、Rbは2価の炭化水素基であり、Bはイソシアネートをブロックする基を表す。nは3~6の整数である。n個のRbおよびBはそれぞれ同一でも異なっていてもよい。
 Raは、炭化水素基であり、脂肪族炭化水素基であることが好ましく、分岐の脂肪族炭化水素基であることが好ましい。Raの炭素数は、3~30が好ましく、4~20がより好ましく、4~15がさらに好ましい。
 Rbは、炭化水素基であり、脂肪族炭化水素基であっても、芳香族炭化水素基であってもよい。また、直鎖または分岐、環状のいずれの炭化水素基であってもよい。Rbの炭素数は、2~30が好ましく、2~20がより好ましく、2~15がさらに好ましい。
 Bは、後述するブロック剤由来の基がより好ましく、オキシム化合物由来の基が更に好ましい。
 nは3~6の整数であり、3または4がより好ましい。
The blocked isocyanate compound having an adduct structure is preferably a compound represented by the following general formula (ad).
Ra- {O (C = O) -NH-Rb-NCO-B} n (ad)
In general formula (ad), Ra is an n-valent hydrocarbon group, Rb is a divalent hydrocarbon group, and B represents a group that blocks isocyanate. n is an integer of 3-6. n Rb and B may be the same or different.
Ra is a hydrocarbon group, preferably an aliphatic hydrocarbon group, and preferably a branched aliphatic hydrocarbon group. The carbon number of Ra is preferably 3 to 30, more preferably 4 to 20, and still more preferably 4 to 15.
Rb is a hydrocarbon group, and may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group. Further, it may be a linear, branched or cyclic hydrocarbon group. Rb preferably has 2 to 30 carbon atoms, more preferably 2 to 20 carbon atoms, and still more preferably 2 to 15 carbon atoms.
B is more preferably a group derived from a blocking agent described later, and more preferably a group derived from an oxime compound.
n is an integer of 3 to 6, and 3 or 4 is more preferable.
 イソシアヌレート構造とは、下記式(cy)で表される構造である。なお、下記式中、波線部分は他の構造との結合部分である。
Figure JPOXMLDOC01-appb-C000031
 式(cy)中、R、R及びRはそれぞれ独立に、イソシアネート化合物の、イソシアネート基以外の基を表す。
The isocyanurate structure is a structure represented by the following formula (cy). In the following formula, the wavy line portion is a portion connected to another structure.
Figure JPOXMLDOC01-appb-C000031
In formula (cy), R 1 , R 2 and R 3 each independently represent a group other than the isocyanate group of the isocyanate compound.
 ブロックイソシアネート化合物のブロック構造を形成するブロック剤としては、オキシム化合物、ラクタム化合物、フェノール化合物、アルコール化合物、アミン化合物、活性メチレン化合物、ピラゾール化合物、メルカプタン化合物、イミダゾール系化合物、イミド系化合物等を挙げることができる。これらの中でも、オキシム化合物、ラクタム化合物、フェノール化合物、アルコール化合物、アミン化合物、活性メチレン化合物、又は、ピラゾール化合物が好ましく、オキシム化合物、及び、ラクタム化合物がより好ましく、オキシム化合物が更に好ましく、メチルエチルケトンオキシムが特に好ましい。
 上記オキシム化合物としては、オキシム、及び、ケトオキシムが挙げられる。具体的には、アセトキシム、ホルムアルドキシム、シクロヘキサンオキシム、メチルエチルケトンオキシム、シクロヘキサノンオキシム、ベンゾフェノンオキシム等が例示できる。
 上記ラクタム化合物としては、ε-カプロラクタム、γ-ブチロラクタム等が例示できる。
 上記フェノール化合物としては、フェノール、ナフトール、クレゾール、キシレノール、ハロゲン置換フェノール等が例示できる。
 上記アルコール化合物としては、メタノール、エタノール、プロパノール、ブタノール、シクロヘキサノール、エチレングリコールモノアルキルエーテル、プロピレングリコールモノアルキルエーテル、乳酸アルキル等が例示できる。
 上記アミン化合物としては、第1級アミン及び第2級アミンが挙げられ、芳香族アミン、脂肪族アミン、脂環族アミンいずれでもよく、アニリン、ジフェニルアミン、エチレンイミン、ポリエチレンイミン等が例示できる。
 上記活性メチレン化合物としては、マロン酸ジエチル、マロン酸ジメチル、アセト酢酸エチル、アセト酢酸メチル等が例示できる。
 上記ピラゾール化合物としては、ピラゾール、メチルピラゾール、ジメチルピラゾール等が例示できる、
 上記メルカプタン化合物としては、アルキルメルカプタン、アリールメルカプタン等が例示できる。
Examples of the blocking agent that forms the block structure of the blocked isocyanate compound include an oxime compound, a lactam compound, a phenol compound, an alcohol compound, an amine compound, an active methylene compound, a pyrazole compound, a mercaptan compound, an imidazole compound, and an imide compound. Can do. Among these, oxime compounds, lactam compounds, phenol compounds, alcohol compounds, amine compounds, active methylene compounds, or pyrazole compounds are preferable, oxime compounds and lactam compounds are more preferable, oxime compounds are more preferable, and methyl ethyl ketone oxime is more preferable. Particularly preferred.
Examples of the oxime compound include oxime and ketoxime. Specific examples include acetoxime, formaldoxime, cyclohexane oxime, methyl ethyl ketone oxime, cyclohexanone oxime, and benzophenone oxime.
Examples of the lactam compound include ε-caprolactam and γ-butyrolactam.
Examples of the phenol compound include phenol, naphthol, cresol, xylenol, and halogen-substituted phenol.
Examples of the alcohol compound include methanol, ethanol, propanol, butanol, cyclohexanol, ethylene glycol monoalkyl ether, propylene glycol monoalkyl ether, and alkyl lactate.
Examples of the amine compound include primary amines and secondary amines, which may be aromatic amines, aliphatic amines, and alicyclic amines, and examples thereof include aniline, diphenylamine, ethyleneimine, and polyethyleneimine.
Examples of the active methylene compound include diethyl malonate, dimethyl malonate, ethyl acetoacetate, methyl acetoacetate and the like.
Examples of the pyrazole compound include pyrazole, methylpyrazole, dimethylpyrazole and the like.
Examples of the mercaptan compound include alkyl mercaptans and aryl mercaptans.
 ブロックイソシアネート化合物は、市販品として入手可能であり、例えば、コロネートAPステーブルM、コロネート2503、2515、2507、2513、2555、ミリオネートMS-50(以上、日本ポリウレタン工業(株)製)、タケネートB-830、B-815N、B-820NSU、B-842N、B-846N、B-870N、B-874N、B-882N(以上、三井化学(株)製)、デュラネート17B-60P、17B-60PX、17B-60P、TPA-B80X、TPA-B80E、MF-B60X、MF-B60B、MF-K60X、MF-K60B、E402-B80B、SBN-70D、SBB-70P、K6000(以上、旭化成ケミカルズ(株)製)、デスモジュールBL1100、BL1265 MPA/X、BL3575/1、BL3272MPA、BL3370MPA、BL3475BA/SN、BL5375MPA、VPLS2078/2、BL4265SN、PL340、PL350、スミジュールBL3175(以上、住化バイエルウレタン(株)製)等を好ましく使用することができる。 The blocked isocyanate compound is available as a commercial product. For example, Coronate AP Stable M, Coronate 2503, 2515, 2507, 2513, 2555, Millionate MS-50 (above, manufactured by Nippon Polyurethane Industry Co., Ltd.), Takenate B -830, B-815N, B-820NSU, B-842N, B-84N, B-870N, B-874N, B-882N (manufactured by Mitsui Chemicals, Inc.), Duranate 17B-60P, 17B-60PX, 17B-60P, TPA-B80X, TPA-B80E, MF-B60X, MF-B60B, MF-K60X, MF-K60B, E402-B80B, SBN-70D, SBB-70P, K6000 (above, manufactured by Asahi Kasei Chemicals Corporation) ), Death Module BL1100, BL12 5 MPA / X, BL3575 / 1, BL3272MPA, BL3370MPA, BL3475BA / SN, BL5375MPA, VPLS2078 / 2, BL4265SN, PL340, PL350, Sumijour BL3175 (above, manufactured by Sumika Bayer Urethane Co., Ltd.) and the like are preferably used. Can do.
 本発明の感光性樹脂組成物における(S)ブロックイソシアネート化合物の含有量は、感光性樹脂組成物の全固形分に対して、0.1~15質量%が好ましい。下限は、0.5質量%以上がより好ましく、1質量%以上が更に好ましい。上限は、10質量%以下がより好ましく、5質量%以下が更に好ましい。
 また、(S)ブロックイソシアネート化合物は、(A)ポリシロキサン成分100質量部に対し、0.1~15質量部含有することが好ましく、0.5~10質量部がより好ましく、1~5質量部がさらに好ましい。
 (S)ブロックイソシアネート化合物は、1種のみであってもよいし、2種以上を併用することもできる。2種以上を併用する場合は、合計量が上記範囲であることが好ましい。
The content of the (S) blocked isocyanate compound in the photosensitive resin composition of the present invention is preferably 0.1 to 15% by mass with respect to the total solid content of the photosensitive resin composition. The lower limit is more preferably 0.5% by mass or more, and further preferably 1% by mass or more. The upper limit is more preferably 10% by mass or less, and still more preferably 5% by mass or less.
The (S) blocked isocyanate compound is preferably contained in an amount of 0.1 to 15 parts by weight, more preferably 0.5 to 10 parts by weight, based on 100 parts by weight of the (A) polysiloxane component. Part is more preferred.
(S) A block isocyanate compound may be only 1 type and can also use 2 or more types together. When using 2 or more types together, it is preferable that a total amount is the said range.
<<増感剤>>
 本発明の感光性樹脂組成物は、光酸発生剤との組み合わせにおいて、光酸発生剤の分解を促進させるために、増感剤を含有することができる。増感剤は、活性光線または放射線を吸収して電子励起状態となる。電子励起状態となった増感剤は、光酸発生剤と接触して、電子移動、エネルギー移動、発熱などの作用が生じる。これにより光酸発生剤は化学変化を起こして分解し、酸を生成する。好ましい増感剤の例としては、以下の化合物類に属しており、かつ350~450nmの波長域のいずれかに吸収波長を有する化合物が挙げられる。
<< Sensitizer >>
The photosensitive resin composition of the present invention can contain a sensitizer in order to promote the decomposition of the photoacid generator in combination with the photoacid generator. The sensitizer absorbs actinic rays or radiation and enters an electronically excited state. The sensitizer in an electronically excited state comes into contact with the photoacid generator, and effects such as electron transfer, energy transfer, and heat generation occur. Thereby, a photo-acid generator raise | generates a chemical change and decomposes | disassembles and produces | generates an acid. Examples of preferable sensitizers include compounds belonging to the following compounds and having an absorption wavelength in any of the wavelength ranges of 350 to 450 nm.
 多核芳香族類(例えば、ピレン、ペリレン、トリフェニレン、アントラセン、9,10-ジブトキシアントラセン、9,10-ジエトキシアントラセン,3,7-ジメトキシアントラセン、9,10-ジプロピルオキシアントラセン)、キサンテン類(例えば、フルオレッセイン、エオシン、エリスロシン、ローダミンB、ローズベンガル)、キサントン類(例えば、キサントン、チオキサントン、ジメチルチオキサントン、ジエチルチオキサントン)、シアニン類(例えばチアカルボシアニン、オキサカルボシアニン)、メロシアニン類(例えば、メロシアニン、カルボメロシアニン)、ローダシアニン類、オキソノール類、チアジン類(例えば、チオニン、メチレンブルー、トルイジンブルー)、アクリジン類(例えば、アクリジンオレンジ、クロロフラビン、アクリフラビン)、アクリドン類(例えば、アクリドン、10-ブチル-2-クロロアクリドン)、アントラキノン類(例えば、アントラキノン)、スクアリウム類(例えば、スクアリウム)、スチリル類、ベーススチリル類(例えば、2-[2-[4-(ジメチルアミノ)フェニル]エテニル]ベンゾオキサゾール)、クマリン類(例えば、7-ジエチルアミノ4-メチルクマリン、7-ヒドロキシ4-メチルクマリン、2,3,6,7-テトラヒドロ-9-メチル-1H,5H,11H[1]ベンゾピラノ[6,7,8-ij]キノリジン-11-ノン)。
 これら増感剤の中でも、多核芳香族類、アクリドン類、スチリル類、ベーススチリル類、クマリン類が好ましく、多核芳香族類がより好ましい。多核芳香族類の中でもアントラセン誘導体が最も好ましい。
Polynuclear aromatics (eg, pyrene, perylene, triphenylene, anthracene, 9,10-dibutoxyanthracene, 9,10-diethoxyanthracene, 3,7-dimethoxyanthracene, 9,10-dipropyloxyanthracene), xanthenes (Eg, fluorescein, eosin, erythrosine, rhodamine B, rose bengal), xanthones (eg, xanthone, thioxanthone, dimethylthioxanthone, diethylthioxanthone), cyanines (eg, thiacarbocyanine, oxacarbocyanine), merocyanines ( For example, merocyanine, carbomerocyanine), rhodocyanines, oxonols, thiazines (eg, thionine, methylene blue, toluidine blue), acridines (eg, acridine oleoresin) Di, chloroflavin, acriflavine), acridones (eg, acridone, 10-butyl-2-chloroacridone), anthraquinones (eg, anthraquinone), squaliums (eg, squalium), styryls, base styryls ( For example, 2- [2- [4- (dimethylamino) phenyl] ethenyl] benzoxazole), coumarins (for example, 7-diethylamino 4-methylcoumarin, 7-hydroxy 4-methylcoumarin, 2,3,6,7 -Tetrahydro-9-methyl-1H, 5H, 11H [1] benzopyrano [6,7,8-ij] quinolizine-11-non).
Among these sensitizers, polynuclear aromatics, acridones, styryls, base styryls, and coumarins are preferable, and polynuclear aromatics are more preferable. Of the polynuclear aromatics, anthracene derivatives are most preferred.
 増感剤の含有量は、光酸発生剤100質量部に対し、0~1000質量部であることが好ましく、10~500質量部であることがより好ましく、50~200質量部であることがさらに好ましい。増感剤は、1種のみであってもよいし、2種以上を併用することもできる。2種以上を併用する場合は、合計量が上記範囲であることが好ましい。 The content of the sensitizer is preferably 0 to 1000 parts by weight, more preferably 10 to 500 parts by weight, and more preferably 50 to 200 parts by weight with respect to 100 parts by weight of the photoacid generator. Further preferred. Only one type of sensitizer may be used, or two or more types may be used in combination. When using 2 or more types together, it is preferable that a total amount is the said range.
<<架橋剤>>
 本発明の感光性樹脂組成物は、必要に応じて、上述したブロックイソシアネート化合物以外の架橋剤を含有することができる。架橋剤を添加することにより、本発明の感光性樹脂組成物により得られる硬化膜をより強固な膜とすることができる。
 架橋剤は、架橋基を分子内に少なくとも2つ以上含有する化合物である。架橋基とは、熱により、ポリシロキサンの、架橋性基、ベンゼン環、ヒドロキシ基、および、カルボキシ基から選ばれる1種以上と反応する基を意味する。架橋基としては、メチロール基、エポキシ基、オキセタニル基、アルコキシメチル基、メタクリロイル基およびアクリロイル基が好ましく、メチロール基、エポキシ基、アルコキシメチル基、メタクリロイル基およびアクリロイル基がより好ましい。
 架橋剤一分子中の架橋基の数は、3以上であることが好ましく、4以上であることがより好ましい。
 架橋基は、同じ種類の架橋基を分子内に2つ以上有していてもよいし、異なる種類の架橋基を分子内に2つ以上有していてもよい。
 架橋剤の分子量は、150~30000が好ましく、200~10000がより好ましい。このような範囲とすることにより、本発明の効果がより効果的に発揮される。
<< Crosslinking agent >>
The photosensitive resin composition of this invention can contain crosslinking agents other than the block isocyanate compound mentioned above as needed. By adding a crosslinking agent, the cured film obtained by the photosensitive resin composition of the present invention can be made a stronger film.
The crosslinking agent is a compound containing at least two crosslinking groups in the molecule. The cross-linking group means a group that reacts with one or more kinds selected from a cross-linkable group, a benzene ring, a hydroxy group, and a carboxy group of polysiloxane by heat. As the crosslinking group, a methylol group, an epoxy group, an oxetanyl group, an alkoxymethyl group, a methacryloyl group and an acryloyl group are preferable, and a methylol group, an epoxy group, an alkoxymethyl group, a methacryloyl group and an acryloyl group are more preferable.
The number of crosslinking groups in one molecule of the crosslinking agent is preferably 3 or more, and more preferably 4 or more.
The cross-linking group may have two or more of the same type of cross-linking group in the molecule, or may have two or more different types of cross-linking groups in the molecule.
The molecular weight of the crosslinking agent is preferably from 150 to 30,000, more preferably from 200 to 10,000. By setting it as such a range, the effect of this invention is exhibited more effectively.
 本発明の感光性樹脂組成物が、架橋剤を含有する場合、架橋剤の含有量は、感光性樹脂組成物の全固形分100質量部に対し、0.01~50質量部であることが好ましく、0.1~30質量部であることがより好ましく、0.5~20質量部であることがさらに好ましい。上記範囲であれば、機械的強度および溶剤耐性に優れた硬化膜が得られる。架橋剤は1種のみであってもよいし、2種以上を併用することもできる。2種以上を併用する場合は、合計量が上記範囲であることが好ましい。
 また、本発明の感光性樹脂組成物は、架橋剤を実質的に含まない構成とすることもできる。実施的に含まない構成とは、架橋剤が感光性樹脂組成物の固形分の、例えば、1質量%以下であることをいう。
When the photosensitive resin composition of the present invention contains a crosslinking agent, the content of the crosslinking agent is 0.01 to 50 parts by mass with respect to 100 parts by mass of the total solid content of the photosensitive resin composition. Preferably, the amount is 0.1 to 30 parts by mass, and more preferably 0.5 to 20 parts by mass. If it is the said range, the cured film excellent in mechanical strength and solvent tolerance will be obtained. Only one type of crosslinking agent may be used, or two or more types may be used in combination. When using 2 or more types together, it is preferable that a total amount is the said range.
Moreover, the photosensitive resin composition of this invention can also be set as the structure which does not contain a crosslinking agent substantially. The configuration that is not practically used means that the crosslinking agent is, for example, 1% by mass or less of the solid content of the photosensitive resin composition.
<<<分子内に2個以上のエポキシ基を有する化合物>>>
 本発明では、架橋剤として、分子内に2個以上のエポキシ基を有する化合物を用いることができる。分子内に2個以上のエポキシ基を有する化合物の具体例としては、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、脂肪族エポキシ樹脂、エポキシ基含有構成単位有するアクリル樹脂等を挙げることができる。
 これらは市販品として入手できる。例えば、JER152、JER157S70、JER157S65、JER806、JER828、JER1007((株)三菱ケミカルホールディングス製)など、特開2011-221494号公報の段落番号0189に記載の市販品などが挙げられ、その他にも、デナコールEX-611、EX-612、EX-614、EX-614B、EX-622、EX-512、EX-521、EX-411、EX-421、EX-313、EX-314、EX-321、EX-321L、EX-211、EX-212、EX-810、EX-811、EX-850、EX-851、EX-821、EX-830、EX-832、EX-841、EX-911、EX-941、EX-920、EX-931、EX-212L、EX-214L、EX-216L、EX-321L、EX-850L、DLC-201、DLC-203、DLC-204、DLC-205、DLC-206、DLC-301、DLC-402(以上ナガセケムテック製)、YH-300、YH-301、YH-302、YH-315、YH-324、YH-325(以上新日鐵化学製)、セロキサイド 2021P、セロキサイド 2081、EHPE3150、EHPE3150CE(以上(株)ダイセル)などが挙げられる。これらは1種単独または2種以上を組み合わせて使用することができる。
 これらの中でも、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、フェノールノボラック型エポキシ樹脂および脂肪族エポキシ樹脂がより好ましく挙げられ、ビスフェノールA型エポキシ樹脂が特に好ましく挙げられる。
<<< Compound having two or more epoxy groups in the molecule >>>
In the present invention, a compound having two or more epoxy groups in the molecule can be used as the crosslinking agent. Specific examples of compounds having two or more epoxy groups in the molecule include bisphenol A type epoxy resins, bisphenol F type epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, aliphatic epoxy resins, and epoxy group containing An acrylic resin having a structural unit can be given.
These are available as commercial products. For example, JER152, JER157S70, JER157S65, JER806, JER828, JER1007 (manufactured by Mitsubishi Chemical Holdings Co., Ltd.) and the like are commercially available products described in paragraph No. 0189 of JP2011-212494, etc. EX-611, EX-612, EX-614, EX-614B, EX-622, EX-512, EX-521, EX-411, EX-421, EX-313, EX-314, EX-321, EX- 321L, EX-211, EX-212, EX-810, EX-811, EX-850, EX-851, EX-821, EX-830, EX-832, EX-841, EX-911, EX-941, EX-920, EX-931, EX-212L, EX-214L, X-216L, EX-321L, EX-850L, DLC-201, DLC-203, DLC-204, DLC-205, DLC-206, DLC-301, DLC-402 (manufactured by Nagase Chemtech), YH-300 YH-301, YH-302, YH-315, YH-324, YH-325 (manufactured by Nippon Steel Chemical Co., Ltd.), Celoxide 2021P, Celoxide 2081, EHPE3150, EHPE3150CE (above, Daicel Corporation), and the like. These can be used alone or in combination of two or more.
Among these, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenol novolac type epoxy resin and aliphatic epoxy resin are more preferable, and bisphenol A type epoxy resin is particularly preferable.
<<<分子内に2個以上のアルコキシメチル基またはメチロール基を含有する架橋剤>>>
 本発明では、架橋剤として、アルコキシメチル基またはメチロール基を含有する架橋剤を用いることができる。分子内に2個以上のアルコキシメチル基またはメチロール基を含有する架橋剤としては、下記一般式(1)または一般式(2)で表される構造を分子内に2個以上有する架橋剤であり、アルコキシメチル基とメチロール基のいずれか一方または両方を合計で2個以上分子内に含有する。
 -CHOR (1)
(式中、Rは炭素原子数1~8のアルキル基を表し、炭素数1~4のアルキル基が好ましく、メチル基がより好ましい。)
 -CHOH (2)
<<< Crosslinking agent containing two or more alkoxymethyl groups or methylol groups in the molecule >>>
In the present invention, a crosslinking agent containing an alkoxymethyl group or a methylol group can be used as the crosslinking agent. The crosslinking agent containing two or more alkoxymethyl groups or methylol groups in the molecule is a crosslinking agent having two or more structures represented by the following general formula (1) or general formula (2) in the molecule. , One or both of an alkoxymethyl group and a methylol group are contained in the molecule in a total of two or more.
—CH 2 OR 1 (1)
(Wherein R 1 represents an alkyl group having 1 to 8 carbon atoms, preferably an alkyl group having 1 to 4 carbon atoms, and more preferably a methyl group.)
—CH 2 OH (2)
 アルコキシメチル基またはメチロール基は、窒素原子または芳香族環を形成する炭素原子に結合していることが好ましい。 The alkoxymethyl group or methylol group is preferably bonded to a nitrogen atom or a carbon atom forming an aromatic ring.
 アルコキシメチル基またはメチロール基が、窒素原子に結合している架橋剤としては、アルコキシメチル化メラミン、メチロール化メラミン、アルコキシメチル化ベンゾグアナミン、メチロール化ベンゾグアナミン、アルコキシメチル化グリコールウリル、メチロール化グリコールウリル、アルコキシメチル化尿素およびメチロール化尿素等が好ましい。アルコキシメチル化メラミン、アルコキシメチル化ベンゾグアナミン、アルコキシメチル化グリコールウリル、アルコキシメチル化尿素は、それぞれメチロール化メラミン、メチロール化ベンゾグアナミン、メチロール化グリコールウリル、または、メチロール化尿素のメチロール基をアルコキシメチル基に変換することにより得られる。このアルコキシメチル基の種類については、メトキシメチル基、エトキシメチル基、プロポキシメチル基、ブトキシメチル基等を挙げることができるが、アウトガスの発生量の観点から、メトキシメチル基が特に好ましい。
 これらの化合物のうち、アルコキシメチル化メラミン、メチロール化メラミン、アルコキシメチル化ベンゾグアナミン、メチロール化ベンゾグアナミン、アルコキシメチル化グリコールウリル、メチロール化グリコールウリルが好ましく、透明性の観点から、アルコキシメチル化グリコールウリルおよびメチロール化グリコールウリルが特に好ましい。
 また、特開2012-8223号公報の段落番号0107に記載のアルコキシメチル基含有架橋剤を用いることができ、これらの内容は本明細書に組み込まれる。
Examples of the crosslinking agent in which an alkoxymethyl group or a methylol group is bonded to a nitrogen atom include alkoxymethylated melamine, methylolated melamine, alkoxymethylated benzoguanamine, methylolated benzoguanamine, alkoxymethylated glycoluril, methylolated glycoluril, alkoxy Methylated urea and methylolated urea are preferred. Alkoxymethylated melamine, alkoxymethylated benzoguanamine, alkoxymethylated glycoluril, and alkoxymethylated urea convert methylolated melamine, methylolated benzoguanamine, methylolated glycoluril, or methylol group of methylolated urea to alkoxymethyl group, respectively. Can be obtained. Examples of the alkoxymethyl group include a methoxymethyl group, an ethoxymethyl group, a propoxymethyl group, and a butoxymethyl group, and the methoxymethyl group is particularly preferable from the viewpoint of outgas generation amount.
Of these compounds, alkoxymethylated melamine, methylolated melamine, alkoxymethylated benzoguanamine, methylolated benzoguanamine, alkoxymethylated glycoluril, methylolated glycoluril are preferred, and from the viewpoint of transparency, alkoxymethylated glycoluril and methylol Glycoluril is particularly preferred.
In addition, an alkoxymethyl group-containing crosslinking agent described in paragraph No. 0107 of JP2012-8223A can be used, and the contents thereof are incorporated herein.
 分子内に2個以上のアルコキシメチル基またはメチロール基を含有する架橋剤の好ましい構造として、下記式(8-1)~(8-4)で示される化合物及を挙げることができる。
Figure JPOXMLDOC01-appb-C000032
 上記式(8-1)~(8-4)中、Rはそれぞれ独立して水素原子または炭素数1~8のアルキル基を表し、R~R11はそれぞれ独立して、水素原子、水酸基、アルキル基またはアルコキシル基を表し、Xは、単結合、メチレン基または酸素原子を表す。
Preferred structures of the crosslinking agent containing two or more alkoxymethyl groups or methylol groups in the molecule include compounds represented by the following formulas (8-1) to (8-4).
Figure JPOXMLDOC01-appb-C000032
In the above formulas (8-1) to (8-4), R 7 each independently represents a hydrogen atom or an alkyl group having 1 to 8 carbon atoms, and R 8 to R 11 each independently represents a hydrogen atom, A hydroxyl group, an alkyl group or an alkoxyl group is represented, and X 2 represents a single bond, a methylene group or an oxygen atom.
 Rが表すアルキル基は、炭素数1~8であり、炭素数1~4がより好ましく、例えばメチル基、エチル基、プロピル基が挙げられる。
 R~R11が表すアルキル基は、炭素数1~8が好ましく、炭素数1~4がより好ましく、例えば、メチル基、エチル基、プロピル基が挙げられる。
 R~R11が表すアルコキシル基は、炭素数1~8が好ましく、炭素数1~4がより好ましく、例えばメトキシ基、エトキシ基、プロポキシ基が挙げられる。Xは単結合またはメチレン基であるのが好ましい。
 R~R11、Xは、メチル基、エチル基等のアルキル基、ハロゲン原子などで置換されていてもよい。複数個のR、R~R11は、各々同一でも異なっていてもよい。
The alkyl group represented by R 7 has 1 to 8 carbon atoms, more preferably 1 to 4 carbon atoms, and examples thereof include a methyl group, an ethyl group, and a propyl group.
The alkyl group represented by R 8 to R 11 preferably has 1 to 8 carbon atoms, more preferably 1 to 4 carbon atoms, and examples thereof include a methyl group, an ethyl group, and a propyl group.
The alkoxyl group represented by R 8 to R 11 preferably has 1 to 8 carbon atoms, more preferably 1 to 4 carbon atoms, and examples thereof include a methoxy group, an ethoxy group, and a propoxy group. X 2 is preferably a single bond or a methylene group.
R 7 to R 11 and X 2 may be substituted with an alkyl group such as a methyl group or an ethyl group, or a halogen atom. The plurality of R 7 and R 8 to R 11 may be the same or different.
 分子内に2個以上のアルコキシメチル基またはメチロール基を含有する架橋剤は、市販品としても入手可能であり、例えば、サイメル300、301、303、370、325、327、701、266、267、238、1141、272、202、1156、1158、1123、1170、1174、UFR65、300(以上、三井サイアナミッド(株)製)、ニカラックMX-750、-032、-706、-708、-40、-31、-270、-280、-290、-750LM、ニカラックMS-11、ニカラックMW-30HM、-100LM、-390、(以上、(株)三和ケミカル製)などを好ましく使用することができる。これらは1種単独または2種以上を組み合わせて使用することができる。 Crosslinkers containing two or more alkoxymethyl groups or methylol groups in the molecule are also available as commercial products, for example, Cymel 300, 301, 303, 370, 325, 327, 701, 266, 267, 238, 1141, 272, 202, 1156, 1158, 1123, 1170, 1174, UFR65, 300 (above, manufactured by Mitsui Cyanamid Co., Ltd.), Nicalac MX-750, -032, -706, -708, -40,- 31, -270, -280, -290, -750LM, Nicarak MS-11, Nicarak MW-30HM, -100LM, -390, (manufactured by Sanwa Chemical Co., Ltd.) and the like can be preferably used. These can be used alone or in combination of two or more.
<<<分子内に2個以上のメタクリロイル基またはアクリロイル基を含む化合物>>>
 本発明では、架橋剤として、メタクリロイル基またはアクリロイル基を含む化合物を使用してもよい。メタクリロイル基またはアクリロイル基を含む化合物とは、アクリル酸エステル、メタクリル酸エステルからなる群から選択される化合物である。アクリロイル基、メタクリロイル基は1分子中に2個以上、さらに好ましくは3官能以上ある化合物であることが好ましい。
<<< Compound containing two or more methacryloyl groups or acryloyl groups in the molecule >>>
In the present invention, a compound containing a methacryloyl group or an acryloyl group may be used as a crosslinking agent. The compound containing a methacryloyl group or an acryloyl group is a compound selected from the group consisting of acrylic acid esters and methacrylic acid esters. It is preferable that the acryloyl group and the methacryloyl group are compounds having two or more, more preferably trifunctional or more in one molecule.
 2官能(メタ)アクリレートとしては、例えば、エチレングリコール(メタ)アクリレート、1,6-ヘキサンジオールジ(メタ)アクリレート、1,9-ノナンジオールジ(メタ)アクリレート、ポリプロピレングリコールジ(メタ)アクリレート、テトラエチレングリコールジ(メタ)アクリレート、ビスフェノキシエタノールフルオレンジアクリレート、ビスフェノキシエタノールフルオレンジアクリレートなどが挙げられる。
 3官能以上の(メタ)アクリレートとしては、例えば、トリメチロールプロパントリ(メタ)アクリレート、ペンタエリスリトールトリ(メタ)アクリレート、トリ((メタ)アクリロイロキシエチル)フォスフェート、ペンタエリスリトールテトラ(メタ)アクリレート、ジペンタエリスリトールペンタ(メタ)アクリレート、ジペンタエリスリトールヘキサ(メタ)アクリレートなどが挙げられる。 
 好ましい市販品としては、日本化薬社製 KAYARAD DPHA、新中村化学工業社製 NKエステルシリーズで、二官能のA-200、A-400、A-600、A-1000、ABE-300、A-BPE-4、A-BPE-10、A-BPE-20、A-BPE-30、A-BPP-3、A-DOD、A-DCP、A-IBD-2E、A-NPG、701A、A-B1206PE、A-HD-N、A-NOD-N、APG-100、APG-200、APG-400、APG-700、1G、2G、3G、4G、9G、14G、23G、BG、BD、HD-N、NOD、IND、BPE-100、BPE-200、BPE-300、BPE-500、BPE-900、BPE-1300N、NPG、DCP、1206PE、701、3PG、9PG、3官能のA-9300、AT-30E、A-TMPT-3EO、A-TMPT-9EO、A-TMPT-3PO、A-TMM-3、A-TMM-3L、A-TMM-3LM-N、TMPT、TMPT-9EO、4官能以上のATM-35E、ATM-4E、AD-TMP、AD-TMP-L、ATM-4P、A-TMMT、A-DPH等を挙げることができる。
Examples of the bifunctional (meth) acrylate include ethylene glycol (meth) acrylate, 1,6-hexanediol di (meth) acrylate, 1,9-nonanediol di (meth) acrylate, polypropylene glycol di (meth) acrylate, Examples include tetraethylene glycol di (meth) acrylate, bisphenoxyethanol full orange acrylate, and bisphenoxyethanol full orange acrylate.
Examples of the tri- or more functional (meth) acrylate include trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, tri ((meth) acryloyloxyethyl) phosphate, pentaerythritol tetra (meth) acrylate. , Dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and the like.
Preferable commercially available products are KAYARAD DPHA manufactured by Nippon Kayaku Co., Ltd., NK ester series manufactured by Shin-Nakamura Chemical Co., Ltd., bifunctional A-200, A-400, A-600, A-1000, ABE-300, A- BPE-4, A-BPE-10, A-BPE-20, A-BPE-30, A-BPP-3, A-DOD, A-DCP, A-IBD-2E, A-NPG, 701A, A- B1206PE, A-HD-N, A-NOD-N, APG-100, APG-200, APG-400, APG-700, 1G, 2G, 3G, 4G, 9G, 14G, 23G, BG, BD, HD- N, NOD, IND, BPE-100, BPE-200, BPE-300, BPE-500, BPE-900, BPE-1300N, NPG, DCP, 1206PE, 701, 3 G, 9PG, trifunctional A-9300, AT-30E, A-TMPT-3EO, A-TMPT-9EO, A-TMPT-3PO, A-TMM-3, A-TMM-3L, A-TMM-3LM -N, TMPT, TMPT-9EO, tetra- or higher functional ATM-35E, ATM-4E, AD-TMP, AD-TMP-L, ATM-4P, A-TMMT, A-DPH and the like can be mentioned.
<<<分子内に2個以上のオキセタニル基を含む化合物>>>
 本発明では、架橋剤として、オキセタニル基を含む化合物を使用してもよい。オキセタニル基は分子内に2個以上あることが好ましい。分子内に2個以上のオキセタニル基を有する化合物としては、特開2008-224970号公報の段落0134~0145記載の化合物が挙げられ、その内容は本明細書に組み込まれる。具体例としては、アロンオキセタンOXT-121、OXT-221、OX-SQ、PNOX(以上、東亞合成(株)製)を用いることができる。
<<< Compound containing two or more oxetanyl groups in the molecule >>>
In the present invention, a compound containing an oxetanyl group may be used as a crosslinking agent. It is preferable that there are two or more oxetanyl groups in the molecule. Examples of the compound having two or more oxetanyl groups in the molecule include the compounds described in paragraphs 0134 to 0145 of JP-A-2008-224970, the contents of which are incorporated herein. As specific examples, Aron Oxetane OXT-121, OXT-221, OX-SQ, and PNOX (above, manufactured by Toagosei Co., Ltd.) can be used.
<<塩基性化合物>>
 本発明の感光性樹脂組成物は、塩基性化合物を含有することができる。塩基性化合物としては、化学増幅レジストで用いられるものの中から任意に選択して使用することができる。例えば、脂肪族アミン、芳香族アミン、複素環式アミン、第四級アンモニウムヒドロキシド、カルボン酸の第四級アンモニウム塩等が挙げられる。これらの具体例としては、特開2011-221494号公報の段落番号0204~0207に記載の化合物が挙げられ、これらの内容は本明細書に組み込まれる。
 具体的には、脂肪族アミンとしては、例えば、トリメチルアミン、ジエチルアミン、トリエチルアミン、ジ-n-プロピルアミン、トリ-n-プロピルアミン、トリブチルアミン、ジ-n-ペンチルアミン、トリ-n-ペンチルアミン、ジエタノールアミン、トリエタノールアミン、ジシクロヘキシルアミン、ジシクロヘキシルメチルアミンなどが挙げられる。
 芳香族アミンとしては、例えば、アニリン、ベンジルアミン、N,N-ジメチルアニリン、ジフェニルアミンなどが挙げられる。
 複素環式アミンとしては、例えば、ピリジン、2-メチルピリジン、4-メチルピリジン、2-エチルピリジン、4-エチルピリジン、2-フェニルピリジン、4-フェニルピリジン、N-メチル-4-フェニルピリジン、4-ジメチルアミノピリジン、イミダゾール、ベンズイミダゾール、4-メチルイミダゾール、2-フェニルベンズイミダゾール、2,4,5-トリフェニルイミダゾール、ニコチン、ニコチン酸、ニコチン酸アミド、キノリン、8-オキシキノリン、ピラジン、ピラゾール、ピリダジン、プリン、ピロリジン、ピペリジン、ピペラジン、モルホリン、4-メチルモルホリン、N-シクロヘキシル-N’-[2-(4-モルホリニル)エチル]チオ尿素、1,5-ジアザビシクロ[4.3.0]-5-ノネン、1,8-ジアザビシクロ[5.3.0]-7-ウンデセンなどが挙げられる。
 第四級アンモニウムヒドロキシドとしては、例えば、テトラメチルアンモニウムヒドロキシド、テトラエチルアンモニウムヒドロキシド、テトラ-n-ブチルアンモニウムヒドロキシド、テトラ-n-ヘキシルアンモニウムヒドロキシドなどが挙げられる。
 カルボン酸の第四級アンモニウム塩としては、例えば、テトラメチルアンモニウムアセテート、テトラメチルアンモニウムベンゾエート、テトラ-n-ブチルアンモニウムアセテート、テトラ-n-ブチルアンモニウムベンゾエートなどが挙げられる。
<< basic compound >>
The photosensitive resin composition of the present invention can contain a basic compound. The basic compound can be arbitrarily selected from those used in chemically amplified resists. Examples include aliphatic amines, aromatic amines, heterocyclic amines, quaternary ammonium hydroxides, quaternary ammonium salts of carboxylic acids, and the like. Specific examples thereof include compounds described in JP-A 2011-212494, paragraphs 0204 to 0207, the contents of which are incorporated herein.
Specifically, as the aliphatic amine, for example, trimethylamine, diethylamine, triethylamine, di-n-propylamine, tri-n-propylamine, tributylamine, di-n-pentylamine, tri-n-pentylamine, Examples include diethanolamine, triethanolamine, dicyclohexylamine, and dicyclohexylmethylamine.
Examples of the aromatic amine include aniline, benzylamine, N, N-dimethylaniline, diphenylamine and the like.
Examples of the heterocyclic amine include pyridine, 2-methylpyridine, 4-methylpyridine, 2-ethylpyridine, 4-ethylpyridine, 2-phenylpyridine, 4-phenylpyridine, N-methyl-4-phenylpyridine, 4-dimethylaminopyridine, imidazole, benzimidazole, 4-methylimidazole, 2-phenylbenzimidazole, 2,4,5-triphenylimidazole, nicotine, nicotinic acid, nicotinamide, quinoline, 8-oxyquinoline, pyrazine, Pyrazole, pyridazine, purine, pyrrolidine, piperidine, piperazine, morpholine, 4-methylmorpholine, N-cyclohexyl-N ′-[2- (4-morpholinyl) ethyl] thiourea, 1,5-diazabicyclo [4.3.0 ] -5-Nonene, 1,8-di And azabicyclo [5.3.0] -7-undecene.
Examples of the quaternary ammonium hydroxide include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetra-n-butylammonium hydroxide, tetra-n-hexylammonium hydroxide, and the like.
Examples of the quaternary ammonium salt of carboxylic acid include tetramethylammonium acetate, tetramethylammonium benzoate, tetra-n-butylammonium acetate, tetra-n-butylammonium benzoate and the like.
 塩基性化合物の含有量は、感光性樹脂組成物中の全固形分100質量部に対して、0.001~3質量部であることが好ましく、0.005~1質量部であることがより好ましい。塩基性化合物は、1種単独で使用しても、2種以上を併用してもよい。2種以上を併用する場合は、合計量が上記範囲であることが好ましい。 The content of the basic compound is preferably 0.001 to 3 parts by mass and more preferably 0.005 to 1 part by mass with respect to 100 parts by mass of the total solid content in the photosensitive resin composition. preferable. A basic compound may be used individually by 1 type, or may use 2 or more types together. When using 2 or more types together, it is preferable that a total amount is the said range.
<<界面活性剤>>
 本発明の感光性樹脂組成物は、界面活性剤を含有することができる。界面活性剤としては、アニオン系、カチオン系、ノニオン系、または、両性のいずれでも使用することができるが、好ましい界面活性剤はノニオン界面活性剤である。本発明の組成物に用いられる界面活性剤としては、例えば、特開2012-88459号公報の段落番号0201~0205に記載のものや、特開2011-215580号公報の段落番号0185~0188に記載のものを用いることができ、これらの記載は本明細書に組み込まれる。
 ノニオン系界面活性剤の例としては、ポリオキシエチレン高級アルキルエーテル類、ポリオキシエチレン高級アルキルフェニルエーテル類、ポリオキシエチレングリコールの高級脂肪酸ジエステル類、シリコーン系、フッ素系界面活性剤を挙げることができる。また、以下商品名で、FA-630、KP-341、X-22-822(信越化学工業(株)製)、ポリフローNo.99C(共栄社化学(株)製)、エフトップ(三菱マテリアル化成社製)、メガファックF-430、F-444、F-477、F-553、F-554、F-556、F-557、F-559、F-562、F-565、F-567、F-569、R-40(DIC(株)製)、フロラードノベックFC-4430(住友スリーエム(株)製)、サーフロンS-242(AGCセイミケミカル社製)、PolyFoxPF-6320(OMNOVA社製)、SH-8400(東レ・ダウコーニングシリコーン)、フタージェントFTX-218G(ネオス社製)等を挙げることができる。
 また、界面活性剤として、下記一般式(I-1-1)で表される構成単位Aおよび構成単位Bを含み、テトラヒドロフラン(THF)を溶媒とした場合のゲルパーミエーションクロマトグラフィーで測定されるポリスチレン換算の重量平均分子量(Mw)が1,000以上10,000以下である共重合体を好ましい例として挙げることができる。
<< Surfactant >>
The photosensitive resin composition of the present invention can contain a surfactant. As the surfactant, any of anionic, cationic, nonionic, or amphoteric can be used, but a preferred surfactant is a nonionic surfactant. Examples of the surfactant used in the composition of the present invention include those described in paragraph Nos. 0201 to 0205 in JP2012-88459A, and paragraphs 0185 to 0188 in JP2011-215580A. Can be used and these descriptions are incorporated herein.
Examples of nonionic surfactants include polyoxyethylene higher alkyl ethers, polyoxyethylene higher alkyl phenyl ethers, higher fatty acid diesters of polyoxyethylene glycol, silicone-based and fluorine-based surfactants. . The following trade names are FA-630, KP-341, X-22-822 (manufactured by Shin-Etsu Chemical Co., Ltd.), Polyflow No. 99C (manufactured by Kyoeisha Chemical Co., Ltd.), Ftop (manufactured by Mitsubishi Materials Kasei), MegaFuck F-430, F-444, F-477, F-553, F-554, F-556, F-557, F-559, F-562, F-565, F-567, F-569, R-40 (manufactured by DIC Corporation), Florard Novec FC-4430 (manufactured by Sumitomo 3M Corporation), Surflon S- 242 (manufactured by AGC Seimi Chemical Co., Ltd.), PolyFox PF-6320 (manufactured by OMNOVA), SH-8400 (Toray Dow Corning Silicone), and Fategent FTX-218G (manufactured by Neos).
Further, the surfactant is measured by gel permeation chromatography using the structural unit A and the structural unit B represented by the following general formula (I-1-1) and using tetrahydrofuran (THF) as a solvent. A preferred example is a copolymer having a polystyrene-reduced weight average molecular weight (Mw) of 1,000 or more and 10,000 or less.
一般式(I-1-1)
Figure JPOXMLDOC01-appb-C000033
(式(I-1-1)中、R401およびR403はそれぞれ独立に、水素原子またはメチル基を表し、R402は炭素数1以上4以下の直鎖アルキレン基を表し、R404は水素原子または炭素数1以上4以下のアルキル基を表し、Lは炭素数3以上6以下のアルキレン基を表し、pおよびqは重合比を表す質量百分率であり、pは10質量%以上80質量%以下の数値を表し、qは20質量%以上90質量%以下の数値を表し、rは1以上18以下の整数を表し、sは1以上10以下の整数を表す。)
Formula (I-1-1)
Figure JPOXMLDOC01-appb-C000033
(In formula (I-1-1), R 401 and R 403 each independently represent a hydrogen atom or a methyl group, R 402 represents a linear alkylene group having 1 to 4 carbon atoms, and R 404 represents hydrogen. Represents an atom or an alkyl group having 1 to 4 carbon atoms, L represents an alkylene group having 3 to 6 carbon atoms, p and q are mass percentages representing a polymerization ratio, and p is 10 mass% to 80 mass%. The following numerical values are represented, q represents a numerical value of 20% to 90% by mass, r represents an integer of 1 to 18, and s represents an integer of 1 to 10.
 上記Lは、下記一般式(I-1-2)で表される分岐アルキレン基であることが好ましい。一般式(I-1-2)におけるR405は、炭素数1以上4以下のアルキル基を表し、相溶性と被塗布面に対する濡れ性の点で、炭素数1以上3以下のアルキル基が好ましく、炭素数2または3のアルキル基がより好ましい。pとqとの和(p+q)は、p+q=100、すなわち、100質量%であることが好ましい。 L is preferably a branched alkylene group represented by the following general formula (I-1-2). R 405 in formula (I-1-2) represents an alkyl group having 1 to 4 carbon atoms, and preferably an alkyl group having 1 to 3 carbon atoms in terms of compatibility and wettability with respect to the coated surface. And an alkyl group having 2 or 3 carbon atoms is more preferred. The sum (p + q) of p and q is preferably p + q = 100, that is, 100% by mass.
一般式(I-1-2)
Figure JPOXMLDOC01-appb-C000034
Formula (I-1-2)
Figure JPOXMLDOC01-appb-C000034
 上記共重合体の重量平均分子量(Mw)は、1,500以上5,000以下がより好ましい。 The weight average molecular weight (Mw) of the copolymer is more preferably from 1,500 to 5,000.
 界面活性剤の含有量は、感光性樹脂組成物中の全固形分100質量部に対して、10質量部以下であることが好ましく、0.001~10質量部であることがより好ましく、0.01~3質量部であることがさらに好ましい。界面活性剤は、1種単独で使用しても、2種以上を併用してもよい。2種以上を併用する場合は、合計量が上記範囲であることが好ましい。 The content of the surfactant is preferably 10 parts by mass or less, more preferably 0.001 to 10 parts by mass with respect to 100 parts by mass of the total solid content in the photosensitive resin composition. More preferably, the content is 0.01 to 3 parts by mass. Surfactant may be used individually by 1 type, or may use 2 or more types together. When using 2 or more types together, it is preferable that a total amount is the said range.
<<酸化防止剤>>
 本発明の感光性樹脂組成物は、酸化防止剤を含有してもよい。酸化防止剤としては、公知の酸化防止剤を含有することができる。酸化防止剤を添加することにより、硬化膜の着色を防止できる、または、分解による膜厚減少を低減でき、また、耐熱透明性に優れるという利点がある。
 酸化防止剤としては、例えば、リン系酸化防止剤、アミド類、ヒドラジド類、ヒンダードアミン系酸化防止剤、イオウ系酸化防止剤、フェノール系酸化防止剤、アスコルビン酸類、硫酸亜鉛、糖類、亜硝酸塩、亜硫酸塩、チオ硫酸塩、ヒドロキシルアミン誘導体などを挙げることができる。これらの中では、硬化膜の着色、膜厚減少の観点からフェノール系酸化防止剤、ヒンダードアミン系酸化防止剤、リン系酸化防止剤、アミド系酸化防止剤、ヒドラジド系酸化防止剤、イオウ系酸化防止剤が好ましく、フェノール系酸化防止剤が最も好ましい。これらは1種単独で用いてもよいし、2種以上を混合してもよい。
 具体例としては、特開2005-29515号公報の段落番号0026~0031に記載の化合物、特開2011-227106号公報の段落番号0106~0116に記載の化合物を挙げる事ができ、これらの内容は本願明細書に組み込まれる。
 好ましい市販品として、アデカスタブAO-20、アデカスタブAO-60、アデカスタブAO-80、アデカスタブLA-52、アデカスタブLA-81、アデカスタブAO-412S、アデカスタブPEP-36、イルガノックス1035、イルガノックス1098、チヌビン144を挙げる事ができる。
 酸化防止剤の含有量は、感光性樹脂組成物の全固形分に対して、0.1~10質量%であることが好ましく、0.2~5質量%であることがより好ましく、0.5~4質量%であることが特に好ましい。この範囲にすることで、透明性に優れた膜を形成しやすい。更には、パターン形成時の感度も良好となる。
<< Antioxidant >>
The photosensitive resin composition of the present invention may contain an antioxidant. As an antioxidant, a well-known antioxidant can be contained. By adding an antioxidant, there is an advantage that coloring of the cured film can be prevented, or a decrease in film thickness due to decomposition can be reduced, and heat-resistant transparency is excellent.
Examples of antioxidants include phosphorus antioxidants, amides, hydrazides, hindered amine antioxidants, sulfur antioxidants, phenol antioxidants, ascorbic acids, zinc sulfate, sugars, nitrites, sulfites. Examples thereof include salts, thiosulfates, and hydroxylamine derivatives. Among these, phenolic antioxidants, hindered amine antioxidants, phosphorus antioxidants, amide antioxidants, hydrazide antioxidants, sulfur antioxidants from the viewpoint of coloring the cured film and reducing film thickness Agents are preferred, and phenolic antioxidants are most preferred. These may be used individually by 1 type and may mix 2 or more types.
Specific examples include compounds described in paragraph numbers 0026 to 0031 of JP-A-2005-29515, and compounds described in paragraph numbers 0106 to 0116 of JP-A-2011-227106. It is incorporated herein.
Preferred commercially available products are ADK STAB AO-20, ADK STAB AO-60, ADK STAB AO-80, ADK STAB LA-52, ADK STAB LA-81, ADK STAB AO-412S, ADK STAB PEP-36, IRGANOX 1035, IRGANOX 1098, and Tinuvin 144. Can be mentioned.
The content of the antioxidant is preferably 0.1 to 10% by mass, more preferably 0.2 to 5% by mass, based on the total solid content of the photosensitive resin composition. It is particularly preferably 5 to 4% by mass. By setting it within this range, it is easy to form a film having excellent transparency. Furthermore, the sensitivity at the time of pattern formation is also good.
<<酸増殖剤>>
 本発明の感光性樹脂組成物は、感度向上を目的に、酸増殖剤を用いることができる。
 酸増殖剤は、酸触媒反応によってさらに酸を発生して反応系内の酸濃度を上昇させることができる化合物であり、酸が存在しない状態では安定に存在する化合物である。
 酸増殖剤の具体例としては、特開2011-221494の段落番号0226~0228に記載の酸増殖剤が挙げられ、この内容は本明細書に組み込まれる。
<< Acid Proliferator >>
In the photosensitive resin composition of the present invention, an acid proliferating agent can be used for the purpose of improving sensitivity.
The acid proliferating agent is a compound that can further generate an acid by an acid-catalyzed reaction to increase the acid concentration in the reaction system, and is a compound that exists stably in the absence of an acid.
Specific examples of the acid proliferating agent include acid proliferating agents described in paragraph numbers 0226 to 0228 of JP2011-212494A, the contents of which are incorporated herein.
<<現像促進剤>>
 本発明の感光性樹脂組成物は、現像促進剤を含有することができる。
 現像促進剤としては、特開2012-042837号公報の段落番号0171~0172に記載されているものを参酌でき、この内容は本明細書に組み込まれる。
 本発明の感光性樹脂組成物における現像促進剤の含有量は、感度と残膜率の観点から、感光性樹脂組成物の全固形分100質量部に対し、0~30質量部が好ましく、0.1~20質量部がより好ましく、0.5~10質量部であることが最も好ましい。現像促進剤は、1種単独で使用しても、2種以上を併用してもよい。2種以上を併用する場合は、合計量が上記範囲であることが好ましい。
<< Development accelerator >>
The photosensitive resin composition of the present invention can contain a development accelerator.
As the development accelerator, those described in paragraphs 0171 to 0172 of JP2012-042837A can be referred to, and the contents thereof are incorporated herein.
The content of the development accelerator in the photosensitive resin composition of the present invention is preferably 0 to 30 parts by mass with respect to 100 parts by mass of the total solid content of the photosensitive resin composition from the viewpoint of sensitivity and residual film ratio. More preferably, it is 1 to 20 parts by mass, and most preferably 0.5 to 10 parts by mass. A development accelerator may be used individually by 1 type, or may use 2 or more types together. When using 2 or more types together, it is preferable that a total amount is the said range.
<<アルコキシシラン化合物>>
 本発明の感光性樹脂組成物は、アルコキシシラン化合物を含有することができる。
 アルコキシシラン化合物としては、ジアルコキシシラン化合物またはトリアルコキシシラン化合物が好ましく、トリアルコキシシラン化合物がより好ましい。アルコキシシラン化合物が有するアルコキシ基の炭素数は1~5が好ましい。
 アルコキシシラン化合物は、基材となる無機物、例えば、シリコン、酸化シリコン、窒化シリコン等のシリコン化合物、金、銅、モリブデン、チタン、アルミニウム等の金属と絶縁膜との密着性を向上させる化合物であることが好ましい。具体的には、公知のシランカップリング剤等も有効である。
<< alkoxysilane compound >>
The photosensitive resin composition of the present invention can contain an alkoxysilane compound.
As the alkoxysilane compound, a dialkoxysilane compound or a trialkoxysilane compound is preferable, and a trialkoxysilane compound is more preferable. The alkoxy group contained in the alkoxysilane compound preferably has 1 to 5 carbon atoms.
The alkoxysilane compound is a compound that improves the adhesion between an insulating material and an inorganic material serving as a base material, for example, a silicon compound such as silicon, silicon oxide, or silicon nitride, or a metal such as gold, copper, molybdenum, titanium, or aluminum. It is preferable. Specifically, a known silane coupling agent or the like is also effective.
<<その他の成分>>
 本発明の感光性樹脂組成物は、可塑剤、熱ラジカル発生剤、熱酸発生剤、熱ラジカル発生剤、紫外線吸収剤、増粘剤、および、有機または無機の沈殿防止剤などの公知の添加剤を加えることができる。また、これらの化合物としては、例えば特開2012-88459号公報の段落番号0201~0224の記載も参酌でき、これらの内容は本明細書に組み込まれる。
<< Other ingredients >>
The photosensitive resin composition of the present invention is a known additive such as a plasticizer, a thermal radical generator, a thermal acid generator, a thermal radical generator, an ultraviolet absorber, a thickener, and an organic or inorganic precipitation inhibitor. An agent can be added. As these compounds, for example, the description of paragraph numbers 0201 to 0224 of JP2012-88459A can be referred to, and the contents thereof are incorporated in the present specification.
<感光性樹脂組成物の調製方法>
 本発明の感光性樹脂組成物は、各成分を所定の割合でかつ任意の方法で混合し、撹拌溶解して調製することができる。例えば、各成分を、それぞれ予め溶剤に溶解させた溶液とした後、これらを所定の割合で混合して本発明の感光性樹脂組成物を調製することもできる。以上のように調製した組成物溶液は、例えば孔径0.2μmのフィルター等を用いてろ過した後に、使用することもできる。
<Method for preparing photosensitive resin composition>
The photosensitive resin composition of the present invention can be prepared by mixing each component at a predetermined ratio and by any method, stirring and dissolving. For example, the photosensitive resin composition of the present invention can also be prepared by mixing each component with a predetermined ratio after preparing each solution in advance in a solvent. The composition solution prepared as described above can be used after being filtered using, for example, a filter having a pore diameter of 0.2 μm.
 本発明の感光性樹脂組成物の25℃における固形分濃度は、1~60質量%が好ましく、3~40質量%がより好ましく、5~30質量%がさらに好ましく、5~17質量%が特に好ましい。粘度は、1~100mPa・sが好ましく、2~60mPa・sがより好ましく、3~40mPa・sが最も好ましい。感光性樹脂組成物の固形分濃度や粘度を上記範囲とすることで、高品位な塗布が可能となる。粘度は、例えば、東機産業製 粘度計 RE85L(ローター:1°34’×R24測定範囲0.6~1200mPa・s)を使用し、25℃に温度調製を施した状態で測定することができる。 The solid content concentration of the photosensitive resin composition of the present invention at 25 ° C. is preferably 1 to 60% by mass, more preferably 3 to 40% by mass, further preferably 5 to 30% by mass, and particularly preferably 5 to 17% by mass. preferable. The viscosity is preferably 1 to 100 mPa · s, more preferably 2 to 60 mPa · s, and most preferably 3 to 40 mPa · s. By setting the solid content concentration and viscosity of the photosensitive resin composition within the above ranges, high-quality coating can be achieved. Viscosity can be measured, for example, using a viscometer RE85L (rotor: 1 ° 34 ′ × R24 measurement range 0.6 to 1200 mPa · s) manufactured by Toki Sangyo Co., Ltd., with the temperature adjusted to 25 ° C. .
 本発明の感光性樹脂組成物は、例えば10℃以上30℃以下の温度で保存することもできる。また、0℃以上10℃℃未満、好ましくは0℃以上5℃未満の温度で保存することもできる。また、0℃未満、好ましくは-5℃以下、さらに好ましくは-20℃以下、より好ましくは-20~-40℃の温度で保存することもできる。
 長期の保存安定性を確保したい場合には、所謂冷凍保管(好ましくは-5℃以下、さらに好ましくは-20℃以下、より好ましくは-20~-40℃)が好ましい。
The photosensitive resin composition of this invention can also be preserve | saved at the temperature of 10 to 30 degreeC, for example. Further, it can be stored at a temperature of 0 ° C. or higher and lower than 10 ° C., preferably 0 ° C. or higher and lower than 5 ° C. Further, it can be stored at a temperature of less than 0 ° C., preferably −5 ° C. or less, more preferably −20 ° C. or less, more preferably −20 to −40 ° C.
In order to ensure long-term storage stability, so-called frozen storage (preferably −5 ° C. or lower, more preferably −20 ° C. or lower, more preferably −20 to −40 ° C.) is preferable.
<硬化膜の製造方法>
 本発明の硬化膜の製造方法は、以下の(1)~(5)の工程を含むことが好ましい。
 (1)本発明の感光性樹脂組成物を基板上に塗布する工程(塗布工程)
 (2)塗布された感光性樹脂組成物から溶剤を除去する工程(溶剤除去工程)
 (3)溶剤が除去された感光性樹脂組成物を活性光線により露光する工程(露光工程)
 (4)露光された感光性樹脂組成物を現像液により現像する工程(露光工程)
 (5)現像された感光性樹脂組成物を熱硬化する工程(ポストベーク工程)
 以下に各工程を順に説明する。
<Method for producing cured film>
The method for producing a cured film of the present invention preferably includes the following steps (1) to (5).
(1) The process of apply | coating the photosensitive resin composition of this invention on a board | substrate (application | coating process)
(2) Step of removing the solvent from the applied photosensitive resin composition (solvent removal step)
(3) Step of exposing the photosensitive resin composition from which the solvent has been removed with actinic rays (exposure step)
(4) Step of developing the exposed photosensitive resin composition with a developer (exposure step)
(5) Step of thermosetting the developed photosensitive resin composition (post-baking step)
Each step will be described below in order.
 (1)の工程では、本発明の感光性樹脂組成物を基板上に塗布して溶剤を含む湿潤膜とすることが好ましい。
 (1)の工程では、基板に感光性樹脂組成物を塗布する前に、基板に対してアルカリ洗浄やプラズマ洗浄などの洗浄を行ってもよい。また、洗浄後の基板に対してヘキサメチルジシラザンなどで基板表面を処理してもよい。ヘキサメチルジシラザンで基板表面を処理する方法としては、特に限定されないが、例えば、ヘキサメチルジシラザン蒸気中に基板を晒しておく方法等が挙げられる。
 基板としては、無機基板、樹脂、樹脂複合材料などが挙げられる。
 無機基板としては、例えばガラス、石英、シリコーン、シリコンナイトライド、および、それらのような基板上にモリブデン、チタン、アルミ、銅などを蒸着した複合基板が挙げられる。
 樹脂としては、ポリブチレンテレフタレート、ポリエチレンテレフタレート、ポリエチレンナフタレート、ポリブチレンナフタレート、ポリスチレン、ポリカーボネート、ポリスルホン、ポリエーテルスルホン、ポリアリレート、アリルジグリコールカーボネート、ポリアミド、ポリイミド、ポリアミドイミド、ポリエーテルイミド、ポリベンズアゾール、ポリフェニレンサルファイド、ポリシクロオレフィン、ノルボルネン樹脂、ポリクロロトリフルオロエチレン等のフッ素樹脂、液晶ポリマー、アクリル樹脂、エポキシ樹脂、シリコーン樹脂、アイオノマー樹脂、シアネート樹脂、架橋フマル酸ジエステル、環状ポリオレフィン、芳香族エーテル、マレイミドーオレフィン、セルロース、エピスルフィド化合物等の合成樹脂からなる基板が挙げられる。
 これらの基板は、上記の形態のまま用いられる場合は少なく、最終製品の形態によって、例えば薄膜トランジスタ(TFT)のような多層積層構造が形成されていてもよい。
 基板への感光性樹脂組成物の塗布方法は特に限定されず、例えば、インクジェット法、スリットコート法、スプレー法、ロールコート法、回転塗布法、流延塗布法、スリットアンドスピン法等の方法を用いることができる。
 スリットコート法の場合には基板とスリットダイとの相対移動速度を50~120mm/secとすることが好ましい。
 感光性樹脂組成物を塗布したときの湿潤膜厚は特に限定されるものではなく、用途に応じた膜厚で塗布することができる。例えば、0.5~10μmが好ましい。
 基板に本発明の感光性樹脂組成物を塗布する前に、特開2009-145395号公報に記載されているような、所謂プリウェット法を適用することも可能である。
In the step (1), it is preferable to apply the photosensitive resin composition of the present invention on a substrate to form a wet film containing a solvent.
In the step (1), before the photosensitive resin composition is applied to the substrate, the substrate may be subjected to cleaning such as alkali cleaning or plasma cleaning. Further, the substrate surface may be treated with hexamethyldisilazane or the like with respect to the cleaned substrate. The method of treating the substrate surface with hexamethyldisilazane is not particularly limited, and examples thereof include a method of exposing the substrate to hexamethyldisilazane vapor.
Examples of the substrate include inorganic substrates, resins, and resin composite materials.
Examples of the inorganic substrate include glass, quartz, silicone, silicon nitride, and a composite substrate in which molybdenum, titanium, aluminum, copper, or the like is vapor-deposited on such a substrate.
The resins include polybutylene terephthalate, polyethylene terephthalate, polyethylene naphthalate, polybutylene naphthalate, polystyrene, polycarbonate, polysulfone, polyethersulfone, polyarylate, allyl diglycol carbonate, polyamide, polyimide, polyamideimide, polyetherimide, poly Fluorine resins such as benzazole, polyphenylene sulfide, polycycloolefin, norbornene resin, polychlorotrifluoroethylene, liquid crystal polymer, acrylic resin, epoxy resin, silicone resin, ionomer resin, cyanate resin, crosslinked fumaric acid diester, cyclic polyolefin, aromatic Made of synthetic resin such as aromatic ether, maleimide-olefin, cellulose, episulfide compound And the like.
These substrates are rarely used in the above-described form, and a multilayer laminated structure such as a thin film transistor (TFT) may be formed depending on the form of the final product.
The method for applying the photosensitive resin composition to the substrate is not particularly limited. For example, an inkjet method, a slit coating method, a spray method, a roll coating method, a spin coating method, a casting coating method, a slit and spin method, etc. Can be used.
In the case of the slit coating method, the relative movement speed between the substrate and the slit die is preferably 50 to 120 mm / sec.
The wet film thickness when the photosensitive resin composition is applied is not particularly limited, and can be applied with a film thickness according to the application. For example, 0.5 to 10 μm is preferable.
Before applying the photosensitive resin composition of the present invention to the substrate, it is also possible to apply a so-called pre-wet method as described in JP-A-2009-145395.
 (2)の工程では、感光性樹脂組成物を塗布して形成した上記の湿潤膜から、減圧(バキューム)および/または加熱等により、溶剤を除去して基板上に乾燥膜を形成させる。溶剤除去工程の加熱条件は、好ましくは70~130℃で30~300秒間程度である。温度と時間が上記範囲である場合、パターンの密着性がより良好で、且つ残渣もより低減できる傾向にある。 In the step (2), the solvent is removed from the wet film formed by applying the photosensitive resin composition by vacuum (vacuum) and / or heating to form a dry film on the substrate. The heating conditions for the solvent removal step are preferably 70 to 130 ° C. and about 30 to 300 seconds. When the temperature and time are in the above ranges, the pattern adhesiveness is better and the residue tends to be further reduced.
 (3)の工程では、乾燥膜を設けた基板に所定のパターンの活性光線を照射する。この工程では、光酸発生剤が分解し酸が発生する。発生した酸の触媒作用により、塗膜成分中に含まれる酸分解性基が加水分解されて、カルボキシ基、フェノール性水酸基、シラノール基などが生成する。
 活性光線による露光光源としては、低圧水銀灯、高圧水銀灯、超高圧水銀灯、ケミカルランプ、LED光源、エキシマレーザー発生装置などを用いることができ、i線(365nm)、h線(405nm)、g線(436nm)などの波長300nm以上450nm以下の波長を有する活性光線が好ましく使用できる。また、必要に応じて長波長カットフィルター、短波長カットフィルター、バンドパスフィルターのような分光フィルターを通して照射光を調整することもできる。露光量は好ましくは1~500mJ/cmである。
 露光装置としては、ミラープロジェクションアライナー、ステッパー、スキャナー、プロキシミティ、コンタクト、マイクロレンズアレイ、レンズスキャナ、レーザー露光、など各種方式の露光機を用いることができる。また、所謂超解像技術を用いた露光をすることもできる。超解像技術としては、複数回露光する多重露光や、位相シフトマスクを用いる方法、輪帯照明法に代表される変形証明法などが挙げられる。これら超解像技術を用いることでより高精細なパターン形成が可能となり、好ましい。
 酸触媒の生成した領域において、上記の加水分解反応を加速させるために、露光後加熱処理:Post Exposure Bake(以下、「PEB」ともいう。)を行うことができる。PEBにより、酸分解性基からのカルボキシ基、フェノール性水酸基、シラノール基の生成を促進させることができる。PEBを行う場合の温度は、30℃以上130℃以下であることが好ましく、40℃以上110℃以下がより好ましく、50℃以上100℃以下が特に好ましい。
In the step (3), the substrate provided with the dry film is irradiated with actinic rays having a predetermined pattern. In this step, the photoacid generator is decomposed to generate an acid. By the catalytic action of the generated acid, the acid-decomposable group contained in the coating film component is hydrolyzed to generate a carboxy group, a phenolic hydroxyl group, a silanol group, and the like.
As an exposure light source using actinic light, a low-pressure mercury lamp, a high-pressure mercury lamp, an ultrahigh-pressure mercury lamp, a chemical lamp, an LED light source, an excimer laser generator, and the like can be used, i-line (365 nm), h-line (405 nm), g-line ( Actinic rays having a wavelength of 300 nm to 450 nm, such as 436 nm), can be preferably used. Moreover, irradiation light can also be adjusted through spectral filters, such as a long wavelength cut filter, a short wavelength cut filter, and a band pass filter, as needed. The exposure amount is preferably 1 to 500 mJ / cm 2 .
As the exposure apparatus, various types of exposure machines such as a mirror projection aligner, a stepper, a scanner, a proximity, a contact, a microlens array, a lens scanner, and a laser exposure can be used. Further, exposure using so-called super-resolution technology can also be performed. Examples of the super-resolution technique include multiple exposure in which exposure is performed a plurality of times, a method using a phase shift mask, a deformation proof method represented by an annular illumination method, and the like. By using these super-resolution techniques, it is possible to form a higher definition pattern, which is preferable.
In order to accelerate the hydrolysis reaction in the region where the acid catalyst is generated, post-exposure heat treatment: Post Exposure Bake (hereinafter also referred to as “PEB”) can be performed. By PEB, the production | generation of the carboxy group, phenolic hydroxyl group, and silanol group from an acid-decomposable group can be accelerated | stimulated. The temperature for performing PEB is preferably 30 ° C. or higher and 130 ° C. or lower, more preferably 40 ° C. or higher and 110 ° C. or lower, and particularly preferably 50 ° C. or higher and 100 ° C. or lower.
 (4)の工程では、遊離したカルボキシ基、フェノール性水酸基、シラノール基を有する共重合体を、現像液を用いて現像して、ポジ画像が形成する。
 現像工程で使用する現像液には、塩基性化合物の水溶液が含まれることが好ましい。塩基性化合物としては、例えば、水酸化リチウム、水酸化ナトリウム、水酸化カリウムなどのアルカリ金属水酸化物類;炭酸ナトリウム、炭酸カリウム、炭酸セシウムなどのアルカリ金属炭酸塩類;重炭酸ナトリウム、重炭酸カリウムなどのアルカリ金属重炭酸塩類;テトラメチルアンモニウムヒドロキシド、テトラエチルアンモニウムヒドロキシド、テトラプロピルアンモニウムヒドロキシド、テトラブチルアンモニウムヒドロキシド、ジエチルジメチルアンモニウムヒドロキシド等のテトラアルキルアンモニウムヒドロキシド類:コリン等の(ヒドロキシアルキル)トリアルキルアンモニウムヒドロキシド類;ケイ酸ナトリウム、メタケイ酸ナトリウムなどのケイ酸塩類;エチルアミン、プロピルアミン、ジエチルアミン、トリエチルアミン等のアルキルアミン類;ジメチルエタノールアミン、トリエタノールアミン等のアルコールアミン類;1,8-ジアザビシクロ-[5.4.0]-7-ウンデセン、1,5-ジアザビシクロ-[4.3.0]-5-ノネン等の脂環式アミン類を使用することができる。
 これらのうち、水酸化ナトリウム、水酸化カリウム、テトラメチルアンモニウムヒドロキシド、テトラエチルアンモニウムヒドロキシド、テトラプロピルアンモニウムヒドロキシド、テトラブチルアンモニウムヒドロキシド、コリン(2-ヒドロキシエチルトリメチルアンモニウムヒドロキシド)が好ましい。
 また、上記アルカリ類の水溶液にメタノールやエタノールなどの水溶性有機溶剤や界面活性剤を適当量添加した水溶液を現像液として使用することもできる。
 現像液のpHは、好ましくは10.0~14.0である。
 現像時間は、好ましくは30~500秒間であり、また、現像の手法は液盛り法(パドル法)、シャワー法、ディップ法等の何れでもよい。
 現像の後に、リンス工程を行うこともできる。リンス工程では、現像後の基板を純水などで洗うことで、付着している現像液除去、現像残渣除去を行う。リンス方法は公知の方法を用いることができる。例えばシャワーリンスやディップリンスなどを挙げる事ができる。
In the step (4), a copolymer having a free carboxy group, a phenolic hydroxyl group, and a silanol group is developed using a developer to form a positive image.
The developer used in the development step preferably contains an aqueous solution of a basic compound. Examples of basic compounds include alkali metal hydroxides such as lithium hydroxide, sodium hydroxide, and potassium hydroxide; alkali metal carbonates such as sodium carbonate, potassium carbonate, and cesium carbonate; sodium bicarbonate, potassium bicarbonate Alkali metal bicarbonates such as: tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, diethyldimethylammonium hydroxide, and other tetraalkylammonium hydroxides: Alkyl) trialkylammonium hydroxides; silicates such as sodium silicate and sodium metasilicate; ethylamine, propylamine, diethylamine, triethylammonium Alkylamines such as diamine; Alcoholamines such as dimethylethanolamine and triethanolamine; 1,8-diazabicyclo- [5.4.0] -7-undecene, 1,5-diazabicyclo- [4.3.0 ] Cycloaliphatic amines such as 5-nonene can be used.
Of these, sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, and choline (2-hydroxyethyltrimethylammonium hydroxide) are preferable.
An aqueous solution obtained by adding an appropriate amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant to the alkaline aqueous solution can also be used as a developer.
The pH of the developer is preferably 10.0 to 14.0.
The development time is preferably 30 to 500 seconds, and the development method may be any of a liquid piling method (paddle method), a shower method, a dipping method, and the like.
A rinsing step can also be performed after development. In the rinsing step, the developed substrate and the development residue are removed by washing the developed substrate with pure water or the like. A known method can be used as the rinsing method. For example, shower rinse and dip rinse can be mentioned.
 (5)の工程では、得られたポジ画像を加熱することにより、酸分解性基を熱分解してカルボキシ基、フェノール性水酸基、シラノール基を生成させ、架橋性基、架橋剤等と架橋させることにより、硬化膜を形成することができる。
 この加熱は、ホットプレートやオーブン等の加熱装置を用いて、所定の温度、例えば180~400℃で所定の時間、例えばホットプレート上なら5~90分間、オーブンならば30~120分間、加熱処理をすることが好ましい。このように架橋反応を進行させることにより、耐熱性、硬度等により優れた保護膜や層間絶縁膜を形成することができる。また、加熱処理を行う際は窒素雰囲気下で行うことにより、透明性をより向上させることもできる。
 ポストベークの前に、比較的低温でベークを行った後にポストベークすることもできる(ミドルベーク工程の追加)。ミドルベークを行う場合は、90~180℃で1~60分加熱した後に、200℃以上の高温でポストベークすることが好ましい。また、ミドルベーク、ポストベークを3段階以上の多段階に分けて加熱する事もできる。このようなミドルベーク、ポストベークの工夫により、パターンのテーパー角を調整することができる。これらの加熱は、ホットプレート、オーブン、赤外線ヒーターなど、公知の加熱方法を使用することができる。
 なお、ポストベークに先立ち、パターンを形成した基板に活性光線により全面再露光(ポスト露光)した後、ポストベークすることにより未露光部分に存在する光酸発生剤から酸を発生させ、架橋工程を促進する触媒として機能させることができ、膜の硬化反応を促進することができる。ポスト露光工程を含む場合の好ましい露光量としては、100~3,000mJ/cmが好ましく、100~500mJ/cmが特に好ましい。
In the step (5), by heating the obtained positive image, the acid-decomposable group is thermally decomposed to generate a carboxy group, a phenolic hydroxyl group, and a silanol group, and crosslinked with a crosslinkable group, a crosslinking agent, and the like. Thus, a cured film can be formed.
This heating is performed using a heating device such as a hot plate or an oven at a predetermined temperature, for example, 180 to 400 ° C. for a predetermined time, for example, 5 to 90 minutes on the hot plate, 30 to 120 minutes for the oven. It is preferable to By proceeding the crosslinking reaction in this way, a protective film and an interlayer insulating film that are superior in heat resistance, hardness, and the like can be formed. In addition, when the heat treatment is performed in a nitrogen atmosphere, the transparency can be further improved.
Prior to post-baking, post-baking can be performed after baking at a relatively low temperature (addition of a middle baking process). When performing middle baking, it is preferable to post-bake at a high temperature of 200 ° C. or higher after heating at 90 to 180 ° C. for 1 to 60 minutes. Moreover, middle baking and post-baking can be heated in three or more stages. The taper angle of the pattern can be adjusted by devising such middle baking and post baking. These heating methods can use well-known heating methods, such as a hotplate, oven, and an infrared heater.
Prior to post-baking, the entire surface of the patterned substrate was re-exposed with actinic rays (post-exposure), and then post-baked to generate an acid from the photoacid generator present in the unexposed portion, thereby performing a crosslinking step. It can function as a catalyst to promote, and can accelerate the curing reaction of the film. The preferred exposure amount in the case of including a post-exposure step, preferably 100 ~ 3,000mJ / cm 2, particularly preferably 100 ~ 500mJ / cm 2.
 本発明の感光性樹脂組成物より得られた硬化膜は、ドライエッチングレジストとして使用することもできる。ポストベーク工程により熱硬化して得られた硬化膜をドライエッチングレジストとして使用する場合、エッチング処理としてはアッシング、プラズマエッチング、オゾンエッチングなどのドライエッチング処理を行うことができる。 The cured film obtained from the photosensitive resin composition of the present invention can also be used as a dry etching resist. In the case where a cured film obtained by thermal curing in a post-baking process is used as a dry etching resist, dry etching processes such as ashing, plasma etching, and ozone etching can be performed as the etching process.
<硬化膜>
 本発明の硬化膜は、上述した本発明の感光性樹脂組成物を硬化して得られた硬化膜である。また、本発明の硬化膜は、上述した本発明の硬化膜の形成方法により得られた硬化膜であることが好ましい。
 本発明の硬化膜は、層間絶縁膜として好適に用いることができる。硬化膜の少なくとも一部を金属部に接触させて用いることが好ましく、特に、金属配線の絶縁基板として好ましく用いることができる。
 本発明の感光性樹脂組成物は、高温でベークされた場合においても高い透明性を有する層間絶縁膜が得られる。本発明の感光性樹脂組成物を用いてなる層間絶縁膜は、高い透明性を有し、液晶表示装置、有機エレクトロルミネッセンス表示装置、タッチパネル等の用途に有用である。
<Curing film>
The cured film of the present invention is a cured film obtained by curing the above-described photosensitive resin composition of the present invention. Moreover, it is preferable that the cured film of this invention is a cured film obtained by the formation method of the cured film of this invention mentioned above.
The cured film of the present invention can be suitably used as an interlayer insulating film. It is preferable to use at least a part of the cured film in contact with the metal part, and it can be particularly preferably used as an insulating substrate for metal wiring.
The photosensitive resin composition of the present invention can provide an interlayer insulating film having high transparency even when baked at a high temperature. The interlayer insulation film formed using the photosensitive resin composition of the present invention has high transparency and is useful for applications such as a liquid crystal display device, an organic electroluminescence display device, and a touch panel.
<液晶表示装置>
 本発明の液晶表示装置は、本発明の硬化膜を有する。
 本発明の液晶表示装置としては、本発明の感光性樹脂組成物を用いて形成される平坦化膜や層間絶縁膜を有すること以外は特に制限されず、様々な構造をとる公知の液晶表示装置を挙げることができる。
 例えば、本発明の液晶表示装置が具備するTFTの具体例としては、アモルファスシリコン-TFT、低温ポリシリコンーTFT、酸化物半導体(例えばインジウムガリウム亜鉛酸化物)TFT等が挙げられる。本発明の硬化膜は電気特性に優れるため、これらのTFTに組み合わせて好ましく用いることができる。
 また、本発明の液晶表示装置が取りうる液晶駆動方式としてはTN(TwistedNematic)方式、VA(Virtical Alignment)方式、IPS(In-Place-Switching)方式、FFS(Frings Field Switching)方式、OCB(Optical Compensated Bend)方式などが挙げられる。
 パネル構成においては、COA(Color Filter on Allay)方式の液晶表示装置でも本発明の硬化膜を用いることができ、例えば、特開2005-284291の有機絶縁膜(115)や、特開2005-346054の有機絶縁膜(212)として用いることができる。また、本発明の液晶表示装置が取りうる液晶配向膜の具体的な配向方式としてはラビング配向法、光配向方などが挙げられる。また、特開2003-149647号公報や特開2011-257734号公報に記載のPSA(Polymer Sustained Alignment)技術によってポリマー配向支持されていてもよい。
 また、本発明の感光性樹脂組成物および本発明の硬化膜は、上記用途に限定されず種々の用途に使用することができる。例えば、平坦化膜や層間絶縁膜以外にも、カラーフィルターの保護膜や、液晶表示装置における液晶層の厚みを一定に保持するためのスペーサーや固体撮像素子においてカラーフィルター上に設けられるマイクロレンズ等に好適に用いることができる。
 図1は、アクティブマトリックス方式の液晶表示装置10の一例を示す概念的断面図である。この液晶表示装置10は、背面にバックライトユニット12を有する液晶パネルであって、液晶パネルは、偏光フィルムが貼り付けられた2枚のガラス基板14,15の間に配置されたすべての画素に対応するTFT16の素子が配置されている。ガラス基板上に形成された各素子には、硬化膜17中に形成されたコンタクトホール18を通して、画素電極を形成するITO透明電極19が配線されている。ITO透明電極19の上には、液晶20の層とブラックマトリックスを配置したRGBカラーフィルター22が設けられている。
 バックライトの光源としては、特に限定されず公知の光源を用いることができる。例えば白色発光ダイオード(LED)、青色・赤色・緑色などの多色LED、蛍光灯(冷陰極管)、有機エレクトロルミネッセンス(有機EL)などを挙げる事ができる。
 また、液晶表示装置は、3D(立体視)型のものとしたり、タッチパネル型のものとしたりすることも可能である。さらにフレキシブル型にすることも可能であり、特開2011-145686号公報に記載の第2層間絶縁膜(48)や、特開2009-258758号公報に記載の層間絶縁膜(520)、特開2007-328210号公報の図1に記載の有機絶縁膜(PAS)として用いることができる。
 さらに、スタティック駆動方式の液晶表示装置でも、本発明を適用することで意匠性の高いパターンを表示させることも可能である。例として、特開2001-125086号公報に記載されているようなポリマーネットワーク型液晶の絶縁膜として本発明を適用することができる。
<Liquid crystal display device>
The liquid crystal display device of the present invention has the cured film of the present invention.
The liquid crystal display device of the present invention is not particularly limited except that it has a planarizing film and an interlayer insulating film formed using the photosensitive resin composition of the present invention, and known liquid crystal display devices having various structures. Can be mentioned.
For example, specific examples of the TFT included in the liquid crystal display device of the present invention include an amorphous silicon-TFT, a low-temperature polysilicon-TFT, an oxide semiconductor (for example, indium gallium zinc oxide) TFT, and the like. Since the cured film of the present invention is excellent in electrical characteristics, it can be preferably used in combination with these TFTs.
Further, the liquid crystal driving methods that can be adopted by the liquid crystal display device of the present invention include TN (Twisted Nematic) method, VA (Virtual Alignment) method, IPS (In-Place-Switching) method, FFS (Frings Field Switching) method, OCB (Optical). Compensated Bend) method and the like.
In the panel configuration, the cured film of the present invention can also be used in a COA (Color Filter on Array) type liquid crystal display device. For example, the organic insulating film (115) of Japanese Patent Application Laid-Open No. 2005-284291, or Japanese Patent Application Laid-Open No. 2005-346054. It can be used as an organic insulating film (212). Specific examples of the alignment method of the liquid crystal alignment film that the liquid crystal display device of the present invention can take include a rubbing alignment method and a photo alignment method. Further, the polymer orientation may be supported by a PSA (Polymer Sustained Alignment) technique described in JP-A Nos. 2003-149647 and 2011-257734.
Moreover, the photosensitive resin composition of this invention and the cured film of this invention are not limited to the said use, It can be used for various uses. For example, in addition to the planarization film and interlayer insulating film, a protective film for the color filter, a spacer for keeping the thickness of the liquid crystal layer in the liquid crystal display device constant, a microlens provided on the color filter in the solid-state imaging device, etc. Can be suitably used.
FIG. 1 is a conceptual cross-sectional view showing an example of an active matrix liquid crystal display device 10. The liquid crystal display device 10 is a liquid crystal panel having a backlight unit 12 on the back surface, and the liquid crystal panel is disposed on all pixels disposed between two glass substrates 14 and 15 having a polarizing film attached thereto. Corresponding TFT 16 elements are arranged. Each element formed on the glass substrate is wired with an ITO transparent electrode 19 that forms a pixel electrode through a contact hole 18 formed in the cured film 17. On the ITO transparent electrode 19, an RGB color filter 22 in which a liquid crystal 20 layer and a black matrix are arranged is provided.
The light source of the backlight is not particularly limited, and a known light source can be used. For example, white light emitting diodes (LEDs), multicolor LEDs such as blue, red, and green, fluorescent lamps (cold cathode tubes), organic electroluminescence (organic EL), and the like can be given.
Further, the liquid crystal display device can be a 3D (stereoscopic) type or a touch panel type. Further, a flexible type can also be used. The second interlayer insulating film (48) described in JP2011-145686A, the interlayer insulating film (520) described in JP2009-258758A, JP It can be used as an organic insulating film (PAS) described in FIG. 1 of 2007-328210.
Further, even in a static drive type liquid crystal display device, a pattern with high designability can be displayed by applying the present invention. As an example, the present invention can be applied as an insulating film of a polymer network type liquid crystal as described in JP-A-2001-125086.
 特開2007-328210号公報の図1に記載の液晶表示装置について、図2を用いて説明する。
 図2において、符号SUB1は、ガラス基板であり、複数の走査信号線と、複数の走査信号線に交差する複数の映像信号線とを有している。各交点近傍には、TFTを有している。
 ガラス基板SUB1の上には、下から順に下地膜UC、シリコン等の半導体膜PS、ゲート絶縁膜GI、TFTのゲート電極GT、第1の層間絶縁膜IN1が形成されている。第1の層間絶縁膜IN1の上には、TFTのドレイン電極SD1と、TFTのソース電極SD2とが形成されている。
 ドレイン電極SD1は、ゲート絶縁膜GI及び第1の層間絶縁膜IN1に形成されたコンタクトホールを介してTFTのドレイン領域に接続されている。ソース電極SD2は、ゲート絶縁膜GI及び第1の層間絶縁膜IN1に形成されたコンタクトホールを介してTFTのソース領域に接続されている。
 ドレイン電極SD1及びソース電極SD2の上には、第2の層間絶縁膜IN2が形成されている。第2の層間絶縁膜IN2の上には、有機絶縁膜PASが形成されている。有機絶縁膜PASは、本発明の感光性樹脂組成物を用いて形成できる。
 有機絶縁膜PASの上には、対向電極CT及び反射膜RALが形成されている。
 対向電極CT及び反射膜RALの上には、第3の層間絶縁膜IN3が形成されている。第3の層間絶縁膜IN3の上には、画素電極PXが形成されている。画素電極PXは、第2の層間絶縁膜IN2及び第3の層間絶縁膜IN3に形成されたコンタクトホールを介してTFTのソース電極SD2と接続されている。
 有機絶縁膜PASを、本発明の感光性樹脂組成物を用いて形成した場合においては、有機絶縁膜PASの耐熱性が優れているため、第3の層間絶縁膜IN3の製膜温度を高めることができ、より緻密な膜を製膜できる。
 なお、第1の層間絶縁膜IN1、第2の層間絶縁膜IN2、第3の層間絶縁膜IN3も本発明の感光性樹脂組成物を用いて形成することができる。
 図2に示す液晶表示装置の詳細については、特開2007-328210号公報の記載を参酌でき、この内容は本明細書に組み込まれることとする。
The liquid crystal display device shown in FIG. 1 of Japanese Patent Application Laid-Open No. 2007-328210 will be described with reference to FIG.
In FIG. 2, reference numeral SUB1 denotes a glass substrate, which has a plurality of scanning signal lines and a plurality of video signal lines intersecting with the plurality of scanning signal lines. A TFT is provided in the vicinity of each intersection.
On the glass substrate SUB1, a base film UC, a semiconductor film PS such as silicon, a gate insulating film GI, a TFT gate electrode GT, and a first interlayer insulating film IN1 are formed in this order from the bottom. A drain electrode SD1 of the TFT and a source electrode SD2 of the TFT are formed on the first interlayer insulating film IN1.
The drain electrode SD1 is connected to the drain region of the TFT through a contact hole formed in the gate insulating film GI and the first interlayer insulating film IN1. The source electrode SD2 is connected to the source region of the TFT through a contact hole formed in the gate insulating film GI and the first interlayer insulating film IN1.
A second interlayer insulating film IN2 is formed on the drain electrode SD1 and the source electrode SD2. An organic insulating film PAS is formed on the second interlayer insulating film IN2. The organic insulating film PAS can be formed using the photosensitive resin composition of the present invention.
On the organic insulating film PAS, a counter electrode CT and a reflective film RAL are formed.
A third interlayer insulating film IN3 is formed on the counter electrode CT and the reflective film RAL. A pixel electrode PX is formed on the third interlayer insulating film IN3. The pixel electrode PX is connected to the source electrode SD2 of the TFT through a contact hole formed in the second interlayer insulating film IN2 and the third interlayer insulating film IN3.
In the case where the organic insulating film PAS is formed using the photosensitive resin composition of the present invention, since the heat resistance of the organic insulating film PAS is excellent, the film forming temperature of the third interlayer insulating film IN3 is increased. And a denser film can be formed.
Note that the first interlayer insulating film IN1, the second interlayer insulating film IN2, and the third interlayer insulating film IN3 can also be formed using the photosensitive resin composition of the present invention.
The details of the liquid crystal display device shown in FIG. 2 can be referred to the description in Japanese Patent Application Laid-Open No. 2007-328210, and the contents thereof are incorporated in this specification.
<有機エレクトロルミネッセンス表示装置>
 本発明の有機エレクトロルミネッセンス(有機EL)表示装置は、本発明の硬化膜を有する。
 本発明の有機EL表示装置としては、本発明の感光性樹脂組成物を用いて形成される平坦化膜や層間絶縁膜を有すること以外は特に制限されず、様々な構造をとる公知の各種有機EL表示装置や液晶表示装置を挙げることができる。
 例えば、本発明の有機EL表示装置が具備するTFTの具体例としては、アモルファスシリコン-TFT、低温ポリシリコンーTFT、酸化物半導体TFT等が挙げられる。本発明の硬化膜は電気特性に優れるため、これらのTFTに組み合わせて好ましく用いることができる。
 図3は、有機EL表示装置の一例の構成概念図である。ボトムエミッション型の有機EL表示装置における基板の模式的断面図を示し、平坦化膜4を有している。
 ガラス基板6上にボトムゲート型のTFT1を形成し、TFT1を覆う状態でSiから成る絶縁膜3が形成されている。絶縁膜3に、ここでは図示を省略したコンタクトホールを形成した後、このコンタクトホールを介してTFT1に接続される配線2(高さ1.0μm)が絶縁膜3上に形成されている。配線2は、TFT1間または、後の工程で形成される有機EL素子とTFT1とを接続するためのものである。
 さらに、配線2の形成による凹凸を平坦化するために、配線2による凹凸を埋め込む状態で絶縁膜3上に平坦化膜4が形成されている。
 平坦化膜4上には、ボトムエミッション型の有機EL素子が形成されている。すなわち、平坦化膜4上に、ITOからなる第一電極5が、コンタクトホール7を介して配線2に接続させて形成されている。また、第一電極5は、有機EL素子の陽極に相当する。
 第一電極5の周縁を覆う形状の絶縁膜8が形成されており、絶縁膜8を設けることによって、第一電極5とこの後の工程で形成する第二電極との間のショートを防止することができる。
 さらに、図3には図示していないが、所望のパターンマスクを介して、正孔輸送層、有機発光層、電子輸送層を順次蒸着して設け、次いで、基板上方の全面にAlから成る第二電極を形成し、封止用ガラス板と紫外線硬化型エポキシ樹脂を用いて貼り合わせることで封止し、各有機EL素子にこれを駆動するためのTFT1が接続されてなるアクティブマトリックス型の有機EL表示装置が得られる。
<Organic electroluminescence display device>
The organic electroluminescence (organic EL) display device of the present invention has the cured film of the present invention.
The organic EL display device of the present invention is not particularly limited except that it has a flattening film and an interlayer insulating film formed using the photosensitive resin composition of the present invention, and various known organic materials having various structures. An EL display device and a liquid crystal display device can be given.
For example, specific examples of TFTs included in the organic EL display device of the present invention include amorphous silicon-TFT, low-temperature polysilicon-TFT, oxide semiconductor TFT, and the like. Since the cured film of the present invention is excellent in electrical characteristics, it can be preferably used in combination with these TFTs.
FIG. 3 is a conceptual diagram of a configuration of an example of an organic EL display device. A schematic cross-sectional view of a substrate in a bottom emission type organic EL display device is shown, and a planarizing film 4 is provided.
A bottom gate type TFT 1 is formed on a glass substrate 6, and an insulating film 3 made of Si 3 N 4 is formed so as to cover the TFT 1. A contact hole (not shown) is formed in the insulating film 3, and then a wiring 2 (height: 1.0 μm) connected to the TFT 1 through the contact hole is formed on the insulating film 3. The wiring 2 is for connecting the TFT 1 with an organic EL element formed between the TFTs 1 or in a later process.
Further, in order to flatten the unevenness due to the formation of the wiring 2, the flattening film 4 is formed on the insulating film 3 with the unevenness due to the wiring 2 being embedded.
On the planarizing film 4, a bottom emission type organic EL element is formed. That is, the first electrode 5 made of ITO is formed on the planarizing film 4 so as to be connected to the wiring 2 through the contact hole 7. The first electrode 5 corresponds to the anode of the organic EL element.
An insulating film 8 having a shape covering the periphery of the first electrode 5 is formed. By providing the insulating film 8, a short circuit between the first electrode 5 and the second electrode formed in the subsequent process is prevented. be able to.
Further, although not shown in FIG. 3, a hole transport layer, an organic light emitting layer, and an electron transport layer are sequentially deposited through a desired pattern mask, and then a second layer made of Al is formed on the entire surface above the substrate. An active matrix organic material in which two electrodes are formed and sealed by bonding using a sealing glass plate and an ultraviolet curable epoxy resin, and each organic EL element is connected to a TFT 1 for driving it. An EL display device is obtained.
 本発明の感光性樹脂組成物は、感度が良好で、現像時のパターン密着性に優れるため、MEMS(Micro Electro Mechanical Systems)デバイスの構造部材として、本発明の感光性樹脂組成物を用いて形成されたレジストパターンを隔壁としたり、機械駆動部品の一部として組み込んで使用される。MEMSデバイスとしては、例えばSAW(Surface Acoustic Wave)フィルター、BAW(Bulk Acoustic Wave)フィルター、ジャイロセンサー、ディスプレイ用マイクロシャッター、イメージセンサー、電子ペーパー、インクジェットヘッド、バイオチップ、封止剤等の部品が挙げられる。より具体的な例は、特表2007-522531、特開2008-250200、特開2009-263544等に例示されている。 Since the photosensitive resin composition of the present invention has good sensitivity and excellent pattern adhesion during development, it is formed using the photosensitive resin composition of the present invention as a structural member of a MEMS (Micro Electro Mechanical Systems) device. The resist pattern thus formed is used as a partition wall or incorporated as a part of a mechanical drive component. Examples of MEMS devices include parts such as SAW (Surface Acoustic Wave) filters, BAW (Bulk Acoustic Wave) filters, gyro sensors, micro shutters for displays, image sensors, electronic paper, inkjet heads, biochips, and sealants. It is done. More specific examples are exemplified in JP-T-2007-522531, JP-A-2008-250200, JP-A-2009-263544, and the like.
 本発明の感光性樹脂組成物は、平坦性や透明性に優れるため、例えば特開2011-107476号公報の図2に記載のバンク層(16)および平坦化膜(57)、特開2010-9793号公報の図4(a)に記載の隔壁(12)および平坦化膜(102)、特開2010-27591号公報の図10に記載のバンク層(221)および第3層間絶縁膜(216b)、特開2009-128577号公報の図4(a)に記載の第2層間絶縁膜(125)および第3層間絶縁膜(126)、特開2010-182638号公報の図3に記載の平坦化膜(12)および画素分離絶縁膜(14)などの形成に用いることもできる。この他、液晶表示装置における液晶層の厚みを一定に保持するためのスペーサーや、ファクシミリ、電子複写機、固体撮像素子等のオンチップカラーフィルターの結像光学系あるいは光ファイバコネクタのマイクロレンズにも好適に用いることができる。 Since the photosensitive resin composition of the present invention is excellent in flatness and transparency, for example, the bank layer (16) and the planarization film (57) described in FIG. 2 of JP-A-2011-107476, JP-A-2010- The partition wall (12) and the planarization film (102) described in FIG. 4 (a) of Japanese Patent No. 9793, the bank layer (221) and the third interlayer insulating film (216b) described in FIG. 10 of Japanese Patent Application Laid-Open No. 2010-27591. ), The second interlayer insulating film (125) and the third interlayer insulating film (126) described in FIG. 4A of JP-A-2009-128577, and the flatness described in FIG. 3 of JP-A-2010-182638. It can also be used to form a chemical film (12) and a pixel isolation insulating film (14). In addition, spacers for maintaining the thickness of the liquid crystal layer in liquid crystal display devices, imaging optical systems for on-chip color filters such as facsimiles, electronic copying machines, solid-state image sensors, and micro lenses for optical fiber connectors are also used. It can be used suitably.
<タッチパネル及びタッチパネル表示装置>
 本発明のタッチパネルは、絶縁層及び/又は保護層の、全部又は一部が本発明の感光性樹脂組成物の硬化物からなるタッチパネルである。また、本発明のタッチパネルは、透明基板、電極及び絶縁層及び/又は保護層を少なくとも有することが好ましい。
 本発明のタッチパネル表示装置は、本発明のタッチパネルを有するタッチパネル表示装置であることが好ましい。本発明のタッチパネルとしては、抵抗膜方式、静電容量方式、超音波方式、電磁誘導方式など公知の方式いずれでもよい。中でも、静電容量方式が好ましい。
 静電容量方式のタッチパネルとしては、特開2010-28115号公報に開示されるものや、国際公開第2012/057165号に開示されるものが挙げられる。
 タッチパネル表示装置としては、いわゆる、インセル型(例えば、特表2012-517051号公報の図5、図6、図7、図8)、いわゆる、オンセル型(例えば、特開2013-168125の図19)、OGS型、TOL型、その他の構成(例えば、特開2013-164871号公報の図6)を挙げることができる
 静電容量方式のタッチパネルは、前面板と、前面板の非接触側に、少なくとも下記(1)~(5)の要素を有し、(4)の絶縁層が本発明の感光性樹脂組成物を用いた硬化膜であることが好ましい。
 (1)額縁層
 (2)複数のパッド部分が接続部分を介して第一の方向に延在して形成された複数の第一の透明電極パターン
 (3)第一の透明電極パターンと電気的に絶縁され、第一の方向に交差する方向に延在して形成された複数のパッド部分からなる複数の第二の透明電極パターン
 (4)第一の透明電極パターンと第二の透明電極パターンとを電気的に絶縁する絶縁層
 (5)第一の透明電極パターンおよび第二の透明電極パターンの少なくとも一方に電気的に接続され、第一の透明電極パターンおよび第二の透明電極パターンとは別の導電性要素
 本発明の静電容量型入力装置は、さらに上記(1)~(5)の要素の全てまたは一部を覆うように透明保護層を設置することが好ましく、透明保護層が本発明の硬化膜であることがより好ましい。
<Touch panel and touch panel display device>
The touch panel of the present invention is a touch panel in which all or part of the insulating layer and / or protective layer is made of a cured product of the photosensitive resin composition of the present invention. Moreover, it is preferable that the touch panel of this invention has a transparent substrate, an electrode, an insulating layer, and / or a protective layer at least.
The touch panel display device of the present invention is preferably a touch panel display device having the touch panel of the present invention. As the touch panel of the present invention, any of known methods such as a resistive film method, a capacitance method, an ultrasonic method, and an electromagnetic induction method may be used. Among these, the electrostatic capacity method is preferable.
Examples of the capacitive touch panel include those disclosed in JP 2010-28115 A and those disclosed in International Publication No. 2012/057165.
As a touch panel display device, a so-called in-cell type (for example, FIG. 5, FIG. 6, FIG. 7 and FIG. 8 of JP-A-2012-517051), a so-called on-cell type (for example, FIG. 19 of JP2013-168125A). , OGS type, TOL type, and other configurations (for example, FIG. 6 of Japanese Patent Application Laid-Open No. 2013-164877). The capacitive touch panel has at least a front plate and a non-contact side of the front plate. The following (1) to (5) elements are preferable, and the insulating layer (4) is preferably a cured film using the photosensitive resin composition of the present invention.
(1) Frame layer (2) A plurality of first transparent electrode patterns formed by extending a plurality of pad portions in a first direction via connection portions (3) First transparent electrode pattern and electrical And a plurality of second transparent electrode patterns comprising a plurality of pad portions formed extending in a direction crossing the first direction. (4) First transparent electrode pattern and second transparent electrode pattern (5) The first transparent electrode pattern and the second transparent electrode pattern are electrically connected to at least one of the first transparent electrode pattern and the second transparent electrode pattern. Another conductive element In the capacitive input device of the present invention, it is preferable that a transparent protective layer is further provided so as to cover all or a part of the elements (1) to (5). The cured film of the present invention is more preferable. There.
 まず、静電容量方式のタッチパネルの構成について説明する。図4は、静電容量方式のタッチパネルの構成例を示す断面図である。図4において静電容量方式のタッチパネル30は、前面板31と、額縁層32と、第一の透明電極パターン33と、第二の透明電極パターン34と、絶縁層35と、導電性要素36と、透明保護層37とから構成されている。 First, the configuration of the capacitive touch panel will be described. FIG. 4 is a cross-sectional view illustrating a configuration example of a capacitive touch panel. In FIG. 4, the capacitive touch panel 30 includes a front plate 31, a frame layer 32, a first transparent electrode pattern 33, a second transparent electrode pattern 34, an insulating layer 35, and a conductive element 36. And a transparent protective layer 37.
 前面板31は、ガラス基板等の透明基板で構成されており、コーニング社のゴリラガラスに代表される強化ガラスなどを用いることができる。なお、透明基板としては、ガラス基板、石英基板、透明樹脂基板等が好ましく挙げられる。また、図4において、前面板31の各要素が設けられている側を非接触面と称する。静電容量方式のタッチパネル30においては、前面板31の接触面(非接触面の反対の面)に指などを接触などさせて入力が行われる。以下、前面板を、「基材」と称する場合がある。 The front plate 31 is made of a transparent substrate such as a glass substrate, and tempered glass represented by gorilla glass manufactured by Corning Inc. can be used. In addition, as a transparent substrate, a glass substrate, a quartz substrate, a transparent resin substrate, etc. are mentioned preferably. Moreover, in FIG. 4, the side in which each element of the front plate 31 is provided is called a non-contact surface. In the capacitive touch panel 30, input is performed by bringing a finger or the like into contact with the contact surface of the front plate 31 (the surface opposite to the non-contact surface). Hereinafter, the front plate may be referred to as a “base material”.
 また、前面板31の非接触面上には額縁層32が設けられている。額縁層32は、タッチパネル前面板の非接触側に形成された表示領域周囲の額縁状のパターンであり、引回し配線等が見えないようにするために形成される。
 静電容量方式のタッチパネルには、図5に示すように、前面板31の一部の領域(図5においては入力面以外の領域)を覆うように額縁層32が設けることができる。さらに、前面板31には、図5に示すように一部に開口部38を設けることができる。開口部38には、押圧によるメカニカルなスイッチを設置することができる。
A frame layer 32 is provided on the non-contact surface of the front plate 31. The frame layer 32 is a frame-like pattern around the display area formed on the non-contact side of the front panel of the touch panel, and is formed so as not to show the lead wiring and the like.
As shown in FIG. 5, the capacitive touch panel may be provided with a frame layer 32 so as to cover a part of the front plate 31 (a region other than the input surface in FIG. 5). Further, the front plate 31 can be provided with an opening 38 in part as shown in FIG. A mechanical switch by pressing can be installed in the opening 38.
 図6に示すように、前面板31の非接触面には、複数のパッド部分が接続部分を介して第一の方向に延在して形成された複数の第一の透明電極パターン33と、第一の透明電極パターン33と電気的に絶縁され、第一の方向に交差する方向に延在して形成された複数のパッド部分からなる複数の第二の透明電極パターン34と、第一の透明電極パターン33と第二の透明電極パターン34を電気的に絶縁する絶縁層35とが形成されている。第一の透明電極パターン33と、第二の透明電極パターン34と、後述する導電性要素36とは、例えば金属膜で作製することができる。このような金属膜としては、ITO(Indium Tin Oxide)膜;IZO(Indium Zinc Oxide)膜;Al、Cu、Ag、Ti、Mo、これらの合金等の金属膜;SiO等の金属酸化膜などが挙げられる。この際、各要素の膜厚は10~200nmとすることができる。また、焼成によりアモルファスのITO膜を多結晶のITO膜へと結晶化させ、電気的抵抗を低減することもできる。また、第一の透明電極パターン33と、第二の透明電極パターン34と、後述する導電性要素36とは、導電性繊維を用いた感光性樹脂組成物を有する感光性転写材料を用いて製造することもできる。その他、ITO等によって第一の導電性パターン等を形成する場合には、特許第4506785号公報の段落0014~0016等を参酌することができ、この内容は本明細書に組み込まれる。 As shown in FIG. 6, on the non-contact surface of the front plate 31, a plurality of first transparent electrode patterns 33 formed with a plurality of pad portions extending in the first direction via the connection portions, A plurality of second transparent electrode patterns consisting of a plurality of pad portions that are electrically insulated from the first transparent electrode pattern 33 and extend in a direction crossing the first direction; An insulating layer 35 that electrically insulates the transparent electrode pattern 33 and the second transparent electrode pattern 34 is formed. The 1st transparent electrode pattern 33, the 2nd transparent electrode pattern 34, and the electroconductive element 36 mentioned later can be produced with a metal film, for example. As such a metal film, an ITO (Indium Tin Oxide) film; an IZO (Indium Zinc Oxide) film; a metal film such as Al, Cu, Ag, Ti, Mo, and alloys thereof; a metal oxide film such as SiO 2 ; Is mentioned. At this time, the film thickness of each element can be 10 to 200 nm. Further, the amorphous ITO film can be crystallized into a polycrystalline ITO film by firing, and the electrical resistance can be reduced. Moreover, the 1st transparent electrode pattern 33, the 2nd transparent electrode pattern 34, and the electroconductive element 36 mentioned later are manufactured using the photosensitive transfer material which has the photosensitive resin composition using a conductive fiber. You can also In addition, when the first conductive pattern or the like is formed of ITO or the like, paragraphs 0014 to 0016 of Japanese Patent No. 4506785 can be referred to, and the contents thereof are incorporated in this specification.
 また、第一の透明電極パターン33および第二の透明電極パターン34の少なくとも一方は、前面板31の非接触面および額縁層32の前面板31とは逆側の面の両方の領域にまたがって設置することができる。図4においては、第二の透明電極パターンが、前面板31の非接触面および額縁層32の前面板31とは逆側の面の両方の領域にまたがって設置されている図が示されている。 Further, at least one of the first transparent electrode pattern 33 and the second transparent electrode pattern 34 extends over both the non-contact surface of the front plate 31 and the region of the frame layer 32 opposite to the front plate 31. Can be installed. In FIG. 4, a diagram is shown in which the second transparent electrode pattern is installed across both areas of the non-contact surface of the front plate 31 and the surface opposite to the front plate 31 of the frame layer 32. Yes.
 図6を用いて第一の透明電極パターン33および第二の透明電極パターン34について説明する。図6は、第一の透明電極パターンおよび第二の透明電極パターンの一例を示す説明図である。図6に示すように、第一の透明電極パターン33は、パッド部分33aが接続部分33bを介して第一の方向に延在して形成されている。また、第二の透明電極パターン34は、第一の透明電極パターン33と絶縁層35によって電気的に絶縁されており、第一の方向に交差する方向(図6における第二の方向)に延在して形成された複数のパッド部分によって構成されている。ここで、第一の透明電極パターン33を形成する場合、パッド部分33aと接続部分33bとを一体として作製してもよいし、接続部分33bのみを作製して、パッド部分33aと第二の透明電極パターン34とを一体として作製(パターニング)してもよい。パッド部分33aと第二の透明電極パターン34とを一体として作製(パターニング)する場合、図6に示すように接続部分33bの一部とパッド部分33aの一部とが連結され、かつ、絶縁層35によって第一の透明電極パターン33と第二の透明電極パターン34とが電気的に絶縁されるように各層が形成される。 The first transparent electrode pattern 33 and the second transparent electrode pattern 34 will be described with reference to FIG. FIG. 6 is an explanatory diagram showing an example of the first transparent electrode pattern and the second transparent electrode pattern. As shown in FIG. 6, the first transparent electrode pattern 33 is formed such that the pad portion 33a extends in the first direction via the connection portion 33b. The second transparent electrode pattern 34 is electrically insulated by the first transparent electrode pattern 33 and the insulating layer 35, and extends in a direction intersecting the first direction (second direction in FIG. 6). It is constituted by a plurality of pad portions that are formed. Here, when the first transparent electrode pattern 33 is formed, the pad portion 33a and the connection portion 33b may be manufactured integrally, or only the connection portion 33b is manufactured, and the pad portion 33a and the second transparent electrode pattern 33 are formed. The electrode pattern 34 may be integrally formed (patterned). When the pad portion 33a and the second transparent electrode pattern 34 are integrally formed (patterned), as shown in FIG. 6, a part of the connection part 33b and a part of the pad part 33a are connected and an insulating layer is formed. Each layer is formed so that the first transparent electrode pattern 33 and the second transparent electrode pattern 34 are electrically insulated by 35.
 図4において、額縁層32の前面板31とは逆側の面側には導電性要素36が設置されている。導電性要素36は、第一の透明電極パターン33および第二の透明電極パターン34の少なくとも一方に電気的に接続され、かつ、第一の透明電極パターン33および第二の透明電極パターン34とは別の要素である。図4においては、導電性要素36が第二の透明電極パターン34に接続されている図が示されている。 In FIG. 4, a conductive element 36 is installed on the surface side of the frame layer 32 opposite to the front plate 31. The conductive element 36 is electrically connected to at least one of the first transparent electrode pattern 33 and the second transparent electrode pattern 34, and is different from the first transparent electrode pattern 33 and the second transparent electrode pattern 34. Is another element. In FIG. 4, a view in which the conductive element 36 is connected to the second transparent electrode pattern 34 is shown.
 また、図4においては、各構成要素の全てを覆うように透明保護層37が設置されている。透明保護層37は、各構成要素の一部のみを覆うように構成されていてもよい。絶縁層35と透明保護層37とは、同一材料であってもよいし、異なる材料であってもよい。 Moreover, in FIG. 4, the transparent protective layer 37 is installed so that all of each component may be covered. The transparent protective layer 37 may be configured to cover only a part of each component. The insulating layer 35 and the transparent protective layer 37 may be made of the same material or different materials.
 静電容量方式のタッチパネルおよび静電容量方式のタッチパネルを構成要素として備えるタッチパネル表示装置は、「最新タッチパネル技術」(2009年7月6日発行(株)テクノタイムズ)、三谷雄二監修、「タッチパネルの技術と開発」シーエムシー出版(2004,12)、「FPD International 2009 Forum T-11講演テキストブック」、「Cypress Semiconductor Corporation アプリケーションノートAN2292」等に開示されている構成を適用することができる。 The touch panel display device including the capacitive touch panel and the capacitive touch panel as a constituent element is “Latest Touch Panel Technology” (Techno Times, issued July 6, 2009), supervised by Yuji Mitani, “Touch Panel The configurations disclosed in “Technology and Development” CMC Publishing (2004, 12), “FPD International 2009 Forum T-11 Lecture Textbook”, “Cypress Semiconductor Corporation Application Note AN2292” and the like can be applied.
 本発明のタッチパネルは、例えば、次のようにして製造できる。
 すなわち、ITO電極に接するように、本発明の感光性樹脂組成物をインクジェット塗布方式など各種方法により塗布する工程1、上記ITO電極に塗布した感光性樹脂組成物上に所定形状の開口パターンを有するマスクを載置し、活性エネルギー線照射を行い露光する工程2、露光後の感光性樹脂組成物を現像する工程3、および、現像後の感光性樹脂組成物を加熱する工程4を経て製造できる。
The touch panel of the present invention can be manufactured, for example, as follows.
That is, the photosensitive resin composition of the present invention is applied by various methods such as an inkjet coating method so as to be in contact with the ITO electrode, and an opening pattern having a predetermined shape is formed on the photosensitive resin composition applied to the ITO electrode. It can be manufactured through Step 2 in which a mask is placed and exposed by irradiation with active energy rays, Step 3 in which the exposed photosensitive resin composition is developed, and Step 4 in which the photosensitive resin composition after development is heated. .
 工程1において、ITO電極に接するように、感光性樹脂組成物を塗布する際、塗布された本発明の感光性樹脂組成物の少なくとも一部が、ITO電極に接していればよい。
 工程2は、上述した露光工程と同様に行うことができ、好ましい態様も同様である。
 工程3は、上述した現像工程と同様に行うことができ、好ましい態様も同様である。
 工程4は、上述したポストベーク工程と同様に行うことができ、好ましい態様も同様である。
 また、本発明のタッチパネルにおけるITO電極パターンの一例としては、上述した図6に示すパターンが好ましく挙げられる。
In Step 1, when the photosensitive resin composition is applied so as to be in contact with the ITO electrode, it is sufficient that at least a part of the applied photosensitive resin composition of the present invention is in contact with the ITO electrode.
Step 2 can be performed in the same manner as the exposure step described above, and the preferred embodiment is also the same.
Step 3 can be performed in the same manner as the development step described above, and the preferred embodiment is also the same.
Step 4 can be performed in the same manner as the post-baking step described above, and the preferred embodiment is also the same.
Moreover, as an example of the ITO electrode pattern in the touch panel of this invention, the pattern shown in FIG. 6 mentioned above is mentioned preferably.
 以下に実施例を挙げて本発明をさらに具体的に説明する。以下の実施例に示す材料、使用量、割合、処理内容、処理手順等は、本発明の趣旨を逸脱しない限り、適宜変更することができる。従って、本発明の範囲は以下に限定されるものではない。
 なお、NMRは、核磁気共鳴の略称である。
The present invention will be described more specifically with reference to the following examples. The materials, amounts used, ratios, processing details, processing procedures, and the like shown in the following examples can be changed as appropriate without departing from the spirit of the present invention. Accordingly, the scope of the present invention is not limited to the following.
NMR is an abbreviation for nuclear magnetic resonance.
<ポリシロキサンの合成例>
(A1-1の合成) 酸分解性基で保護されたカルボキシ基と、エポキシ基とを有するポリシロキサンの合成
 3-トリクロロシリル-1-シクロヘキシルカルボン酸メチルエステル12.4g(0.045mol)、グリシドキシプロピルトリクロロシラン11.2g(0.045mol)、メチルトリクロロシラン0.745g(0.005mol)、フェニルトリクロロシラン1.06g(0.005mol)をトルエン150gに溶解し、水300g中へ室温で撹拌しながら滴下添加した。滴下終了後、反応混合物より酸性水層を分離し、次いで水1Lで有機層を水洗し、水層が中性になってからさらに2回水洗を行った。有機層をエバポレーターにより溶媒留去した。その濃縮液を60℃で5時間加熱し、重合した。
 重合物にテトラヒドロフラン800gを加えて溶解したものを、10%水酸化ナトリウム溶液1,000gへ滴下し、40℃で3時間加熱し、メチルエステル基を加水分解した。塩酸で酸性にしてポリマーを晶出し、濾過、乾燥を行いA1-1前駆体(A1-1のカルボキシ基がテトラヒドロフラニル保護されていないポリマー)を得た。
 得られたA1-1前駆体の100gを、テトラヒドロフラン400mLに溶解させ、触媒量のp-トルエンスルホン酸を添加後、20℃で撹拌しながらジヒドロフラン30gをテトラヒドロフラン30gに溶解させた溶液を滴下した。
 30分反応させた後、濃アンモニア水により中和し、水5Lに中和した反応液を滴下したところ、白色固体が得られた。これを濾過後、アセトン300mlに溶解させ、水5Lに滴下し、濾過後、乾燥してA1-1を得た。A1-1は、テトラヒドロフラニル基で保護されたカルボキシ基、カルボキシ基、エポキシ基、メチル基、および、フェニル基を側鎖に有するポリシロキサンであった。
 1H-NMRによる分析により、A1-1においては、カルボキシ基の78モル%がテトラヒドロフラニル化されたことが分かった。
 A1-1の合成に使用したシラン化合物の種類及びモル比を以下に示す。
Figure JPOXMLDOC01-appb-T000035
<Synthesis example of polysiloxane>
(Synthesis of A1-1) Synthesis of polysiloxane having a carboxyl group protected with an acid-decomposable group and an epoxy group 12.4 g (0.045 mol) of 3-trichlorosilyl-1-cyclohexylcarboxylic acid methyl ester, 11.2 g (0.045 mol) of Sidoxypropyltrichlorosilane, 0.745 g (0.005 mol) of methyltrichlorosilane and 1.06 g (0.005 mol) of phenyltrichlorosilane were dissolved in 150 g of toluene and dissolved in 300 g of water at room temperature. Added dropwise with stirring. After completion of the dropwise addition, the acidic aqueous layer was separated from the reaction mixture, then the organic layer was washed with 1 L of water, and further washed twice with water after the aqueous layer became neutral. The organic layer was evaporated using an evaporator. The concentrate was heated at 60 ° C. for 5 hours to polymerize.
A polymer dissolved in 800 g of tetrahydrofuran was dropped into 1,000 g of a 10% sodium hydroxide solution and heated at 40 ° C. for 3 hours to hydrolyze the methyl ester group. The polymer was crystallized with hydrochloric acid, crystallized, filtered and dried to obtain A1-1 precursor (polymer in which the carboxyl group of A1-1 was not protected with tetrahydrofuranyl).
100 g of the resulting A1-1 precursor was dissolved in 400 mL of tetrahydrofuran, and after adding a catalytic amount of p-toluenesulfonic acid, a solution in which 30 g of dihydrofuran was dissolved in 30 g of tetrahydrofuran was added dropwise with stirring at 20 ° C. .
After reacting for 30 minutes, the reaction solution was neutralized with concentrated aqueous ammonia and neutralized with 5 L of water, and a white solid was obtained. This was filtered, dissolved in 300 ml of acetone, dropped into 5 L of water, filtered and dried to obtain A1-1. A1-1 was a polysiloxane having a carboxy group, a carboxy group, an epoxy group, a methyl group, and a phenyl group protected by a tetrahydrofuranyl group in the side chain.
Analysis by 1H-NMR revealed that 78 mol% of the carboxy group was tetrahydrofuranylated in A1-1.
The types and molar ratios of the silane compounds used for the synthesis of A1-1 are shown below.
Figure JPOXMLDOC01-appb-T000035
 (A1-2の合成) 酸分解性基で保護されたフェノール性水酸基と、エポキシ基とを有するポリシロキサンの合成
 4-ヒドロキシベンジルトリメトキシシラン114.2g(0.5モル)、3-グリシドキシプロピルトリメトキシシラン94.5g(0.4モル)、メチルトリメトキシシラン6.8g(0.05モル)、フェニルトリメトキシシラン9.9g(0.05モル)、DAA(ジアセトンアルコール)250gを、三口フラスコに仕込み、室温で攪拌しながら、水54gにリン酸0.176g(仕込みシラン化合物に対して0.1重量%)を溶かしたリン酸水溶液を、30分かけて添加した。その後、三口フラスコを40℃のオイルバスに浸けて30分攪拌した後、60℃で5時間反応させた。
 反応中に副生成物であるメタノールが留出した。得られたポリシロキサンのDAA溶液を多量の水に注いでポリマーを析出させ、ろ過、乾燥してA1-2前駆体を得た。
 得られたA1―2前駆体の100gを、テトラヒドロフラン400mLに溶解させ、触媒量のp-トルエンスルホン酸を添加後、20℃で撹拌しながらエチルビニルエーテル30gをテトラヒドロフラン30gに溶解させた溶液を滴下した。
 30分反応させた後、濃アンモニア水により中和し、水5Lに中和した反応液を滴下したところ、白色固体が得られた。これを濾過後、アセトン300mlに溶解させ、水5Lに滴下し、濾過後、乾燥してA1-2を得た。
 GPCによるポリスチレン換算の重量平均分子量は5000であった。
 1H-NMRによる分析において、A1-2においては、フェノール性水酸基の水素原子の70モル%がエトキシエチル化されたことが確認された。
 A1-2の合成に使用したシラン化合物の種類及びモル比を以下に示す。
Figure JPOXMLDOC01-appb-T000036
(Synthesis of A1-2) Synthesis of polysiloxane having phenolic hydroxyl group protected with acid-decomposable group and epoxy group 114.2 g (0.5 mol) of 4-hydroxybenzyltrimethoxysilane, 3-glycid 94.5 g (0.4 mol) of xylpropyltrimethoxysilane, 6.8 g (0.05 mol) of methyltrimethoxysilane, 9.9 g (0.05 mol) of phenyltrimethoxysilane, 250 g of DAA (diacetone alcohol) Was added to a three-necked flask, and an aqueous phosphoric acid solution in which 0.176 g of phosphoric acid (0.1 wt% with respect to the charged silane compound) was dissolved in 54 g of water was added over 30 minutes while stirring at room temperature. Thereafter, the three-necked flask was immersed in an oil bath at 40 ° C. and stirred for 30 minutes, and then reacted at 60 ° C. for 5 hours.
During the reaction, methanol as a by-product was distilled off. The obtained polysiloxane DAA solution was poured into a large amount of water to precipitate a polymer, filtered and dried to obtain an A1-2 precursor.
100 g of the obtained A1-2 precursor was dissolved in 400 mL of tetrahydrofuran, and after adding a catalytic amount of p-toluenesulfonic acid, a solution of 30 g of ethyl vinyl ether dissolved in 30 g of tetrahydrofuran was added dropwise with stirring at 20 ° C. .
After reacting for 30 minutes, the reaction solution was neutralized with concentrated aqueous ammonia and neutralized with 5 L of water, and a white solid was obtained. This was filtered, dissolved in 300 ml of acetone, dropped into 5 L of water, filtered and dried to obtain A1-2.
The weight average molecular weight in terms of polystyrene by GPC was 5000.
Analysis by 1 H-NMR confirmed that 70 mol% of the hydrogen atoms of the phenolic hydroxyl group were ethoxyethylated in A1-2.
The types and molar ratios of the silane compounds used for the synthesis of A1-2 are shown below.
Figure JPOXMLDOC01-appb-T000036
 (A1―3の合成) 酸分解性基で保護されたシラノール基と、エポキシ基とを有するポリシロキサンの合成
 フェニルトリメトキシシラン89.2g(0.45モル)、2-(3,4-エポキシシクロヘキシル)エチルトリメトキシシラン110.9g(0.45モル)、メタノール360gを三つ口フラスコに仕込み、撹拌しながら10℃以下に氷冷した。滴下ロートに0.1Mの酢酸水溶液90gを仕込み、氷冷しながら滴下したところ、発熱を伴い加水分解縮合反応が進行した。内温を室温まで上昇させ、2時間撹拌熟成した後、エステルアダプターを設置し、加熱常圧にてメタノール留去を行った。内温がメタノールの沸点を超えるまで留去を続けることによって、白濁粘ちょうなポリシロキサン溶液を得た。この時、捕捉したメタノール量は382gであった。このポリシロキサン溶液に酢酸エチル300gを添加し、溶解した溶液を純水にて2回水洗を行った。このポリシロキサン溶液をロータリーエバポレーターにて濃縮することにより、無色透明のポリシロキサン溶液を233g(固形分濃度62.2質量%)得た。
 得られたポリシロキサン溶液80.4gを酢酸エチル溶液からテトラヒドロフラン溶液(固形分濃度20質量%)に溶媒置換した後、三つ口フラスコに仕込み、メタンスルホン酸1.0g(0.01モル)を添加した。
 次に、10℃以下に氷冷し撹拌しながら、エチル-1-プロペニルエーテル19.4g(0.23モル)を滴下ロートにて内温を10℃以下に保ちながら滴下した。滴下後室温にて2時間反応させた後、トリエチルアミン1.0g(0.01モル)を添加し反応を終了した。反応液を1Lナスフラスコに移し、常温減圧下ロータリーエバポレーターにてテトラヒドロフランを留去し、メチルイソブチルケトン300g及び0.01N酢酸水溶液250mlを添加し反応液を水洗浄した。この洗浄操作を合計3回繰り返した後、有機層を分離、ロータリーエバポレーターにて濃縮して、無色透明のシラノール基がアセタール保護されたポリシロキサンA1-3を49.0g得た。
 ポリシロキサンA1-3のアセタール置換率はNMRの結果より32.5モル%と算出された。
(Synthesis of A1-3) Synthesis of polysiloxane having silanol group protected with acid-decomposable group and epoxy group Phenyltrimethoxysilane 89.2 g (0.45 mol), 2- (3,4-epoxy Cyclohexyl) ethyltrimethoxysilane (110.9 g, 0.45 mol) and methanol (360 g) were charged into a three-necked flask and cooled with ice to 10 ° C. or lower with stirring. When 90 g of 0.1 M acetic acid aqueous solution was charged into the dropping funnel and dropped while cooling with ice, hydrolysis condensation reaction proceeded with heat generation. After raising the internal temperature to room temperature and aging for 2 hours, an ester adapter was installed, and methanol was distilled off under heating and normal pressure. Distillation was continued until the internal temperature exceeded the boiling point of methanol to obtain a cloudy viscous polysiloxane solution. At this time, the amount of captured methanol was 382 g. To this polysiloxane solution, 300 g of ethyl acetate was added, and the dissolved solution was washed twice with pure water. The polysiloxane solution was concentrated with a rotary evaporator to obtain 233 g of a colorless and transparent polysiloxane solution (solid content concentration: 62.2% by mass).
The resulting polysiloxane solution 80.4 g was solvent-substituted from an ethyl acetate solution to a tetrahydrofuran solution (solid content concentration 20% by mass), and then charged into a three-necked flask. Added.
Next, 19.4 g (0.23 mol) of ethyl-1-propenyl ether was added dropwise while keeping the internal temperature at 10 ° C. or less with a dropping funnel while cooling with ice at 10 ° C. or lower and stirring. After dropping, the mixture was reacted at room temperature for 2 hours, and then 1.0 g (0.01 mol) of triethylamine was added to complete the reaction. The reaction solution was transferred to a 1 L eggplant flask, tetrahydrofuran was distilled off with a rotary evaporator under reduced pressure at room temperature, 300 g of methyl isobutyl ketone and 250 ml of 0.01N acetic acid aqueous solution were added, and the reaction solution was washed with water. After repeating this washing operation three times in total, the organic layer was separated and concentrated by a rotary evaporator to obtain 49.0 g of polysiloxane A1-3 in which a colorless and transparent silanol group was acetal protected.
The acetal substitution rate of polysiloxane A1-3 was calculated to be 32.5 mol% from the NMR results.
(A1-4の合成) 酸分解性基で保護されたカルボキシ基と、エポキシ基とを有するポリシロキサンの合成
 シラン化合物を、以下に示す化合物及びモル比で使用し、保護基の種類と量を調整した以外はA1-1と同様にして、下記シラン化合物を混合、反応させ、高分子反応で保護基を導入し、A1ー4を合成した。
 H-NMRによる分析において、A1ー4においては、カルボキシ基の78モル%がテトラヒドロフラニル化されたことが確認された。
Figure JPOXMLDOC01-appb-T000037
(Synthesis of A1-4) Synthesis of polysiloxane having a carboxyl group protected with an acid-decomposable group and an epoxy group A silane compound was used in the following compounds and molar ratios, and the types and amounts of the protecting groups were changed. A1-4 was synthesized in the same manner as A1-1 except that the following silane compounds were mixed and reacted and a protecting group was introduced by a polymer reaction.
Analysis by 1 H-NMR confirmed that 78 mol% of the carboxy group was tetrahydrofuranylated in A1-4.
Figure JPOXMLDOC01-appb-T000037
(A1-5合成) 酸分解性基で保護されたカルボキシ基と、エポキシ基とを有するポリシロキサンの合成
 シラン化合物を、以下に示す化合物及びモル比で使用し、保護基をエトキシエチル基に変更して量を調整した以外はA1-1と同様にして、下記シラン化合物を混合、反応させ、高分子反応で保護基を導入し、A1-5を合成した。
 H-NMRによる分析において、A1-5においては、カルボキシ基の70モル%がエトキシエチル化されたことが確認された。
(Synthesis of A1-5) Synthesis of polysiloxane having a carboxyl group protected with an acid-decomposable group and an epoxy group The silane compound is used in the following compounds and molar ratio, and the protective group is changed to an ethoxyethyl group The following silane compounds were mixed and reacted in the same manner as A1-1 except that the amount was adjusted, and a protective group was introduced by a polymer reaction to synthesize A1-5.
Analysis by 1 H-NMR confirmed that 70 mol% of the carboxy group was ethoxyethylated in A1-5.
Figure JPOXMLDOC01-appb-T000038
Figure JPOXMLDOC01-appb-T000038
(A1-6合成) 酸分解性基で保護されたカルボキシ基と、エポキシ基とを有するポリシロキサンの合成
 シラン化合物を、以下に示す化合物及びモル比で使用し、保護基の種類と量を調整した以外は、A1-1と同様にして、下記シラン化合物を混合、反応させ、高分子反応で保護基を導入し、A1-5を合成した。
 H-NMRによる分析において、A1-5においては、カルボキシ基の82モル%がテトラヒドロフラニル化されたことが確認された。
Figure JPOXMLDOC01-appb-T000039
(Synthesis of A1-6) Synthesis of polysiloxane having a carboxyl group protected with an acid-decomposable group and an epoxy group The silane compound is used in the following compounds and molar ratios, and the kind and amount of the protecting group are adjusted. Except for the above, A1-5 was synthesized in the same manner as A1-1 by mixing and reacting the following silane compounds and introducing a protecting group by a polymer reaction.
The analysis by 1 H-NMR confirmed that 82 mol% of the carboxy group was tetrahydrofuranylated in A1-5.
Figure JPOXMLDOC01-appb-T000039
 (A2-1の合成) 酸分解性基で保護されたカルボキシ基を有するポリシロキサンの合成
 シラン化合物を、以下に示す化合物及びモル比で使用し、保護基の種類と量を調整した以外はA1-1と同様にして下記シラン化合物を混合、反応させてA2-1前駆体を得た(カルボキシ基がテトラヒドロフランで保護される前のポリシロキサン)。
 A2-1前駆体に対し、高分子反応で保護基を導入して、A2-1を合成した。
 A2-1においては、カルボキシ基の90モル%がテトラヒドロフラニル化されたことがNMRで確認された。GPCによるポリスチレン換算の重量平均分子量は5000であった。
Figure JPOXMLDOC01-appb-T000040
(Synthesis of A2-1) Synthesis of polysiloxane having a carboxy group protected with an acid-decomposable group A1 except that the silane compound was used in the following compounds and molar ratios and the type and amount of the protecting group were adjusted. In the same manner as -1, the following silane compounds were mixed and reacted to obtain an A2-1 precursor (polysiloxane before the carboxy group was protected with tetrahydrofuran).
A2-1 was synthesized by introducing a protecting group into the A2-1 precursor by a polymer reaction.
In A2-1, it was confirmed by NMR that 90 mol% of the carboxy group was tetrahydrofuranylated. The weight average molecular weight in terms of polystyrene by GPC was 5000.
Figure JPOXMLDOC01-appb-T000040
 (A2-2の合成) 酸分解性基で保護されたフェノール性水酸基を有するポリシロキサンの合成
 シラン化合物を、以下に示す化合物及びモル比で使用し、保護基の種類と量を調整した以外はA1-2と同様にして、下記シラン化合物を混合、反応させ、高分子反応で保護基を導入し、A2-2を合成した。
 H-NMRによる分析において、A2-2においては、フェノール性水酸基の水素原子の85モル%がエトキシエチル化されたことが確認された。
 GPCによるポリスチレン換算の重量平均分子量は6000であった。
Figure JPOXMLDOC01-appb-T000041
(Synthesis of A2-2) Synthesis of polysiloxane having a phenolic hydroxyl group protected with an acid-decomposable group The silane compound was used in the following compounds and molar ratios, and the type and amount of the protecting group were adjusted. In the same manner as A1-2, the following silane compounds were mixed and reacted, and a protective group was introduced by a polymer reaction to synthesize A2-2.
Analysis by 1 H-NMR confirmed that 85 mol% of the hydrogen atoms of the phenolic hydroxyl group were ethoxyethylated in A2-2.
The weight average molecular weight in terms of polystyrene by GPC was 6000.
Figure JPOXMLDOC01-appb-T000041
 (A2―3の合成) 酸分解性基で保護されたシラノール基を有するポリシロキサンの合成
フェニルトリメトキシシラン99.1g(0.5モル)、ジメチルジメトキシシラン60.1g(0.5モル)、メタノール277gを三口フラスコに仕込み、撹拌しながら10℃以下に氷冷した。滴下ロートに0.1Mのメタンスルホン酸水溶液84gを仕込み、氷冷しながら滴下したところ、発熱を伴い加水分解縮合反応が進行した。内温を室温まで上昇させ、2時間撹拌熟成した後、エステルアダプターを設置し、加熱常圧にてメタノール留去を行った。内温がメタノールの沸点を超えるまで留去を続けることによって、白濁粘ちょうなポリシロキサン溶液を得た。この時、捕捉したメタノール量は280gであった。このポリシロキサン溶液に酢酸エチル200gを添加し、溶解した溶液を純水にて2回水洗を行った。このポリシロキサン溶液をロータリーエバポレーターにて濃縮することにより、無色透明のポリシロキサン溶液を185g(固形分濃度60.5質量%)得た。このポリシロキサンのGPCによるポリスチレン換算の重量平均分子量は3800であった。
 得られたポリシロキサン82.6gを酢酸エチル溶液からテトラヒドロフラン溶液(シロキサン濃度20質量%)に溶媒置換した後、三つ口フラスコに仕込み、メタンスルホン酸1.0g(0.01モル)を添加した。
 次に、10℃以下に氷冷し撹拌しながら、3,4-ジヒドロー2H-ピラン23.6g(0.28モル)を滴下ロートにて内温を10℃以下に保ちながら滴下した。滴下後室温にて2時間反応させた後、トリエチルアミン1.0g(0.01モル)を添加し反応を終了した。反応液をナスフラスコに移し、常温減圧下ロータリーエバポレーターにてテトラヒドロフランを留去し、メチルイソブチルケトン300g及び0.01N酢酸水溶液250mlを添加し反応液を水洗浄した。この洗浄操作を合計3回繰り返した後、有機層を分離、ロータリーエバポレーターにて濃縮して、無色透明のアセタール化ポリシロキサンA2―3を48.4g得た。
 ポリシロキサンA2-3のアセタール置換率はNMRの結果より61.5モル%と算出された。
(Synthesis of A2-3) Synthesis of polysiloxane having silanol group protected with acid-decomposable group 99.1 g (0.5 mol) of phenyltrimethoxysilane, 60.1 g (0.5 mol) of dimethyldimethoxysilane, 277 g of methanol was charged into a three-necked flask and ice-cooled to 10 ° C. or lower with stirring. When 84 g of a 0.1 M aqueous methanesulfonic acid solution was added to the dropping funnel and dropped while cooling with ice, the hydrolysis condensation reaction proceeded with heat generation. After raising the internal temperature to room temperature and aging for 2 hours, an ester adapter was installed, and methanol was distilled off under heating and normal pressure. Distillation was continued until the internal temperature exceeded the boiling point of methanol to obtain a cloudy viscous polysiloxane solution. At this time, the amount of captured methanol was 280 g. 200 g of ethyl acetate was added to the polysiloxane solution, and the dissolved solution was washed twice with pure water. The polysiloxane solution was concentrated with a rotary evaporator to obtain 185 g of a colorless and transparent polysiloxane solution (solid content concentration: 60.5% by mass). The weight average molecular weight of this polysiloxane in terms of polystyrene by GPC was 3800.
The resulting polysiloxane (82.6 g) was solvent-substituted from an ethyl acetate solution to a tetrahydrofuran solution (siloxane concentration: 20% by mass), then charged into a three-necked flask, and 1.0 g (0.01 mol) of methanesulfonic acid was added. .
Next, 23.6 g (0.28 mol) of 3,4-dihydro-2H-pyran was added dropwise while keeping the internal temperature at 10 ° C. or less with a dropping funnel while cooling with ice at 10 ° C. or lower and stirring. After dropping, the mixture was reacted at room temperature for 2 hours, and then 1.0 g (0.01 mol) of triethylamine was added to complete the reaction. The reaction solution was transferred to an eggplant flask, tetrahydrofuran was distilled off with a rotary evaporator under reduced pressure at room temperature, 300 g of methyl isobutyl ketone and 250 ml of 0.01N acetic acid aqueous solution were added, and the reaction solution was washed with water. After repeating this washing operation three times in total, the organic layer was separated and concentrated by a rotary evaporator to obtain 48.4 g of colorless and transparent acetalized polysiloxane A2-3.
The acetal substitution rate of polysiloxane A2-3 was calculated to be 61.5 mol% from the NMR results.
(A2-4合成)酸分解性基で保護されたカルボキシ基を有するポリシロキサンの合成
 シラン化合物を、以下に示す化合物及びモル比で使用し、保護基をエトキシエチル基に変更して量を調整した以外はA1-1と同様にして、下記シラン化合物を混合、反応させ、高分子反応で保護基を導入し、A2-4を合成した。
 H-NMRによる分析において、A2-4は、カルボキシ基の85モル%がエトキシエチル化されたことが確認された。
Figure JPOXMLDOC01-appb-T000042
(A2-4 synthesis) Synthesis of polysiloxane having carboxy group protected with acid-decomposable group Using silane compound in the following compounds and molar ratio, changing the protecting group to ethoxyethyl group to adjust the amount Except that, A2-4 was synthesized in the same manner as A1-1 by mixing and reacting the following silane compounds and introducing a protecting group by polymer reaction.
In analysis by 1 H-NMR, it was confirmed that A2-4 was ethoxyethylated in 85 mol% of the carboxy group.
Figure JPOXMLDOC01-appb-T000042
 (A3-1の合成) カルボキシ基とエポキシ基とを有するポリシロキサンの合成
 シラン化合物を、以下に示す化合物及びモル比で使用し、ジヒドロフランによる保護反応を行わない以外はA1-1と同様にして下記シラン化合物を混合、反応させ、カルボキシ基とエポキシ基とを有するポリシロキサンA3-1を合成した。
 GPCによるポリスチレン換算の重量平均分子量は5000であった。
Figure JPOXMLDOC01-appb-T000043
(Synthesis of A3-1) Synthesis of polysiloxane having a carboxy group and an epoxy group A silane compound was used in the following compounds and molar ratios, and the same reaction as in A1-1 was conducted except that a protective reaction with dihydrofuran was not performed. The following silane compounds were mixed and reacted to synthesize polysiloxane A3-1 having a carboxy group and an epoxy group.
The weight average molecular weight in terms of polystyrene by GPC was 5000.
Figure JPOXMLDOC01-appb-T000043
 (A3-2の合成) フェノール性水酸基とエポキシ基とを有するポリシロキサンの合成
 シラン化合物を、以下に示す化合物及びモル比で使用し、保護基導入を行わないこと以外はA1-2と同様にして、下記シラン化合物を混合、反応させ、A3-2を合成した。
 GPCによるポリスチレン換算の重量平均分子量は6000であった。
Figure JPOXMLDOC01-appb-T000044
(Synthesis of A3-2) Synthesis of polysiloxane having phenolic hydroxyl group and epoxy group The same as A1-2 except that a silane compound is used in the following compounds and molar ratio and no protective group is introduced. Then, the following silane compounds were mixed and reacted to synthesize A3-2.
The weight average molecular weight in terms of polystyrene by GPC was 6000.
Figure JPOXMLDOC01-appb-T000044
 (A3-3の合成) カルボキシ基とオキセタニル基とを有するポリシロキサンの合成
 シラン化合物を、以下に示す化合物及びモル比で使用し、保護基導入を行わないこと以外はA1-1と同様にして、下記シラン化合物を混合、反応させ、A3-3を合成した。
 GPCによるポリスチレン換算の重量平均分子量は6000であった。
(Synthesis of A3-3) Synthesis of polysiloxane having a carboxy group and an oxetanyl group As in A1-1, except that a silane compound is used in the following compounds and molar ratio and no protective group is introduced. Then, the following silane compounds were mixed and reacted to synthesize A3-3.
The weight average molecular weight in terms of polystyrene by GPC was 6000.
Figure JPOXMLDOC01-appb-T000045
Figure JPOXMLDOC01-appb-T000045
<感光性樹脂組成物の調製>
 下記表に記載のように各成分を配合・撹拌して溶剤溶液とし、口径0.2μmのポリテトラフルオロエチレン製フィルターで濾過して、各実施例および比較例の感光性樹脂組成物を得た。
<Preparation of photosensitive resin composition>
As shown in the following table, each component was blended and stirred to obtain a solvent solution, which was filtered through a polytetrafluoroethylene filter having a diameter of 0.2 μm to obtain photosensitive resin compositions of Examples and Comparative Examples. .
 実施例および比較例に用いた各化合物を示す略号の詳細は、以下の通りである。
<(A)ポリシロキサン成分>
 A1-1~A1-6、A2-1~A2-4、A3-1~A3-3、A1-1前駆体:上記合成例に従って合成したポリシロキサン
<(B)光酸発生剤>
 B-1:PAG-103(商品名、下記に示す構造、BASF社製)
 B-1は、pKaが3以下の酸を発生する光酸発生剤である。
Figure JPOXMLDOC01-appb-C000046
 B-2:PAI101(商品名、下記に示す構造、みどり化学(株)製)
 B-2は、pKaが3以下の酸を発生する光酸発生剤である。
Figure JPOXMLDOC01-appb-C000047
 B-3:DTS-105(商品名、トリアリールスルホニウム塩、みどり化学社製)
 B-3は、pKaが3以下の酸を発生する光酸発生剤である。
 B-4:下記に示す構造(WO2011/087011号パンフレットの249段落記載の方法に従って合成した。)
 B-4は、pKaが3以下の酸を発生する光酸発生剤である。
Figure JPOXMLDOC01-appb-C000048
 B-5:GSID-26-1(商品名、トリアリールスルホニウム塩、下記に示す構造、BASF社製)
 B-5は、pKaが3以下の酸を発生する光酸発生剤である。
Figure JPOXMLDOC01-appb-C000049
 B-6:4,7-ジ-n-ブトキシ-1-ナフチルテトラヒドロチオフェニウムトリフルオロメタンスルホネート
 B-6は、pKaが3以下の酸を発生する光酸発生剤である。
 B-7:下記に示す構造
 B-7は、pKaが3以下の酸を発生する光酸発生剤である。
Figure JPOXMLDOC01-appb-C000050
 B’-1:(下記に示す構造。キノンジアジド化合物)
 B’-1は、pKaが3を超える酸を発生する化合物である。
Figure JPOXMLDOC01-appb-C000051
<(C)溶剤>
 C-1:プロピレングリコール1-モノメチルエーテル2-アセタート
 C-2:メチルエチルジグリコール
 C-3:ジエチルジグリコール
 C-4:ブチレングリコールジアセテート
 C-5:シクロヘキサノールアセテート
 C-6:エチレングリコールモノメチルエーテルアセテート
<(S)ブロックイソシアネート化合物>
 S-1:下記化合物S-1(イソホロンジイソシアネートのメチルエチルケトンオキシム保護化合物、分子量396)
 S-2:下記化合物S-2(ヘキサメチレンジイソシアネート3量体のメチルエチルケトンオキシム保護化合物、分子量739)
 S-3:下記化合物S-3(ジフェニルメタンジイソシアネートのメチルエチルケトンオキシム保護化合物、分子量424)
 S-4:下記化合物S-4(ヘキサメチレンジイソシアネート3量体のεカプロラクタム保護化合物、分子量817)
 S-5:イソホロンジイソシアネートをε-カプロラクタムでブロックしたブロックイソシアネート
 S-6:イソホロンジイソシアネートをフェノールでブロックしたブロックイソシアネート
 S-7:イソホロンジイソシアネートをブタノールでブロックしたブロックイソシアネート
 S-8:イソホロンジイソシアネートをジフェニルアミンでブロックしたブロックイソシアネート
 S-9:イソホロンジイソシアネートをアセト酢酸エチルでブロックしたブロックイソシアネート
 S-10:イソホロンジイソシアネートをジメチルピラゾールでブロックしたブロックイソシアネート
 S-11:イソホロンジイソシアネートをブチルメルカプタンでブロックしたブロックイソシアネート
 S-12:下記化合物S-12(トリレンジイソシアネートのメチルエチルケトンオキシム保護化合物、分子量348)
 S-13:下記モノマー(M-1、M-2、M-3)を共重合した重合体(メチルエチルケトンオキシム保護化合物)
M-1:メタクリル酸 2-(0-[1’-メチルプロピリデンアミノ]カルボキシアミノ)エチル
M-2:メタクリル酸
M-3:3-メタクリロキシプロピルトリメトキシシラン
(M-1:M-2:M-3=50:25:25(モル比)、重量平均分子量1800)
Figure JPOXMLDOC01-appb-C000052
<塩基性化合物、その他添加剤>
 TBA:トリブチルアミン
 TPI: トリフェニルイミダゾール
 DBA:9,10-ジブトキシアントラセン
 FA-630:シリコーン系界面活性剤(FA-630、商品名、信越化学製)
 F-554:パーフルオロアルキル基含有ノニオン界面活性剤(メガファック F-554、商品名、DIC製)
The details of the abbreviations indicating the compounds used in Examples and Comparative Examples are as follows.
<(A) Polysiloxane component>
A1-1 to A1-6, A2-1 to A2-4, A3-1 to A3-3, A1-1 precursor: polysiloxane synthesized according to the above synthesis example <(B) Photoacid generator>
B-1: PAG-103 (trade name, structure shown below, manufactured by BASF)
B-1 is a photoacid generator that generates an acid having a pKa of 3 or less.
Figure JPOXMLDOC01-appb-C000046
B-2: PAI101 (trade name, structure shown below, manufactured by Midori Chemical Co., Ltd.)
B-2 is a photoacid generator that generates an acid having a pKa of 3 or less.
Figure JPOXMLDOC01-appb-C000047
B-3: DTS-105 (trade name, triarylsulfonium salt, manufactured by Midori Chemical Co., Ltd.)
B-3 is a photoacid generator that generates an acid having a pKa of 3 or less.
B-4: Structure shown below (synthesized according to the method described in paragraph 249 of WO2011 / 087011 pamphlet)
B-4 is a photoacid generator that generates an acid having a pKa of 3 or less.
Figure JPOXMLDOC01-appb-C000048
B-5: GSID-26-1 (trade name, triarylsulfonium salt, structure shown below, manufactured by BASF)
B-5 is a photoacid generator that generates an acid having a pKa of 3 or less.
Figure JPOXMLDOC01-appb-C000049
B-6: 4,7-di-n-butoxy-1-naphthyltetrahydrothiophenium trifluoromethanesulfonate B-6 is a photoacid generator that generates an acid having a pKa of 3 or less.
B-7: Structure shown below B-7 is a photoacid generator that generates an acid having a pKa of 3 or less.
Figure JPOXMLDOC01-appb-C000050
B′-1: (Structure shown below. Quinonediazide compound)
B′-1 is a compound that generates an acid having a pKa of more than 3.
Figure JPOXMLDOC01-appb-C000051
<(C) Solvent>
C-1: Propylene glycol 1-monomethyl ether 2-acetate C-2: Methyl ethyl diglycol C-3: Diethyl diglycol C-4: Butylene glycol diacetate C-5: Cyclohexanol acetate C-6: Ethylene glycol monomethyl Ether acetate <(S) blocked isocyanate compound>
S-1: Compound S-1 below (methyl ethyl ketone oxime protecting compound of isophorone diisocyanate, molecular weight 396)
S-2: Compound S-2 below (methyl ethyl ketone oxime protecting compound of hexamethylene diisocyanate trimer, molecular weight 739)
S-3: Compound S-3 below (methyl ethyl ketone oxime protecting compound of diphenylmethane diisocyanate, molecular weight 424)
S-4: Compound S-4 below (ε caprolactam protecting compound of hexamethylene diisocyanate trimer, molecular weight 817)
S-5: Blocked isocyanate with isophorone diisocyanate blocked with ε-caprolactam S-6: Blocked isocyanate with isophorone diisocyanate blocked with phenol S-7: Blocked isocyanate with isophorone diisocyanate blocked with butanol S-8: Isophorone diisocyanate with diphenylamine Blocked blocked isocyanate S-9: Blocked isocyanate obtained by blocking isophorone diisocyanate with ethyl acetoacetate S-10: Blocked isocyanate obtained by blocking isophorone diisocyanate with dimethylpyrazole S-11: Blocked isocyanate obtained by blocking isophorone diisocyanate with butyl mercaptan S-12 : The following compound S-12 (tolylene diisocyanate Methyl ethyl ketone oxime-protected compound of the over preparative molecular weight 348)
S-13: Polymer obtained by copolymerizing the following monomers (M-1, M-2, M-3) (methyl ethyl ketone oxime protecting compound)
M-1: Methacrylic acid 2- (0- [1′-methylpropylideneamino] carboxyamino) ethyl M-2: Methacrylic acid M-3: 3-Methacryloxypropyltrimethoxysilane (M-1: M-2) : M-3 = 50: 25: 25 (molar ratio), weight average molecular weight 1800)
Figure JPOXMLDOC01-appb-C000052
<Basic compounds and other additives>
TBA: Tributylamine TPI: Triphenylimidazole DBA: 9,10-dibutoxyanthracene FA-630: Silicone surfactant (FA-630, trade name, manufactured by Shin-Etsu Chemical)
F-554: Perfluoroalkyl group-containing nonionic surfactant (Megafac F-554, trade name, manufactured by DIC)
<感度の評価>
 680mm×880mm角のガラス基板(EAGLE XG、0.7mm厚(コーニング社製))を、ヘキサメチルジシラザン蒸気下に30秒曝し、各感光性樹脂組成物をスリット塗布した後、90℃/120秒ホットプレート上でプリベークして溶剤を揮発させ、膜厚3.0μmの感光性樹脂組成物層を形成した。
 次に、得られた感光性樹脂組成物層を、キヤノン(株)製 MPA 5500CFを用いて、直径8μmホール形状のマスクパターンで露光した。そして、露光後の感光性樹脂組成物層を、アルカリ現像液(0.6%のテトラメチルアンモニウムヒドロキシド水溶液)で23℃/60秒間現像した後、超純水で20秒リンスした。これらの操作により、直径8μmのホールを解像する時の最適i線露光量(Eopt)を求め感度とした。以下の基準で評価し、1、2および3が実用レベルである。
1:80mJ/cm未満
2:80mJ/cm以上、100mJ/cm未満
3:100mJ/cm以上、150mJ/cm未満
4:150mJ/cm以上、190mJ/cm未満
5:190mJ/cm以上
<Evaluation of sensitivity>
A glass substrate having a size of 680 mm × 880 mm (EAGLE XG, 0.7 mm thickness (manufactured by Corning)) was exposed to hexamethyldisilazane vapor for 30 seconds, and each photosensitive resin composition was slit-coated, followed by 90 ° C./120 Pre-baked on a second hot plate to volatilize the solvent to form a photosensitive resin composition layer having a thickness of 3.0 μm.
Next, the obtained photosensitive resin composition layer was exposed with a mask pattern having a hole shape of 8 μm in diameter using MPA 5500CF manufactured by Canon Inc. The exposed photosensitive resin composition layer was developed with an alkali developer (0.6% tetramethylammonium hydroxide aqueous solution) at 23 ° C./60 seconds, and then rinsed with ultrapure water for 20 seconds. Through these operations, the optimum i-line exposure amount (Eopt) when resolving a hole having a diameter of 8 μm was determined and used as the sensitivity. Evaluation is based on the following criteria, and 1, 2 and 3 are practical levels.
1: 80mJ / cm 2 less than 2: 80mJ / cm 2 or more, 100 mJ / cm 2 less than 3: 100mJ / cm 2 or more and less than 150mJ / cm 2 4: 150mJ / cm 2 or more, 190 mJ / cm 2 less than 5: 190 mJ / cm 2 or more
<金属変色の評価(銅)>
 銅膜付ガラス基板に、各感光性樹脂組成物をスリット塗布した後、90℃/120秒ホットプレート上でプリベークして溶剤を揮発させ、膜厚3.0μmの感光性樹脂組成物層を形成した。
 次に、キヤノン(株)製 MPA 7800CF(高圧水銀灯)を用いて、100mJ/cmの露光量で全面露光し、オーブン中で280℃、30分間加熱し、硬化膜を形成した。
 この基板を50℃、湿度100%、気圧212.8kPa(2.1atm)のチャンバー(エスペック株式会社製、「HAST CAHMBER EHS-221MD(商品名)」)内に24時間放置する試験を行った後、銅の変色度合いを評価した。1、2および3が実用レベルである。
1:試験前後で、硬化膜下の銅に変色が見られない。
2:試験前後で、基板面積の1%未満が変色。
3:試験前後で、基板面積の1%以上5%未満が変色。
4:試験前後で、基板面積の5%以上10%未満が変色。
5:試験前後で、基板面積の10%以上が変色。
<Evaluation of metal discoloration (copper)>
After each photosensitive resin composition is slit-coated on a glass substrate with a copper film, the solvent is volatilized by pre-baking on a hot plate at 90 ° C./120 seconds to form a photosensitive resin composition layer having a thickness of 3.0 μm. did.
Next, the entire surface was exposed with an exposure amount of 100 mJ / cm 2 using MPA 7800CF (high pressure mercury lamp) manufactured by Canon Inc., and heated in an oven at 280 ° C. for 30 minutes to form a cured film.
After performing a test in which this substrate is left in a chamber (“HAST CAHMBER EHS-221MD (trade name)” manufactured by ESPEC CORP.) For 24 hours at a temperature of 50 ° C., a humidity of 100%, and an atmospheric pressure of 212.8 kPa (2.1 atm). The degree of copper discoloration was evaluated. 1, 2 and 3 are practical levels.
1: Discoloration is not seen in the copper under the cured film before and after the test.
2: Less than 1% of the substrate area was discolored before and after the test.
3: 1% or more and less than 5% of the substrate area was discolored before and after the test.
4: Before and after the test, 5% or more and less than 10% of the substrate area was discolored.
5: 10% or more of the substrate area is discolored before and after the test.
<金属変色の評価(アルミニウム)>
 アルミニウム膜付ガラス基板に、各感光性樹脂組成物をスリット塗布した後、90℃/120秒ホットプレート上でプリベークして溶剤を揮発させ、膜厚3.0μmの感光性樹脂組成物層を形成した。
 次に、キヤノン(株)製 MPA 7800CF(高圧水銀灯)を用いて、100mJ/cmの露光量で全面露光し、オーブン中で280℃、30分間加熱し、硬化膜を形成した。
 この基板を60℃、湿度90%、気圧162.1kPa(1.6atm)のチャンバー(エスペック株式会社製、「HAST CAHMBER EHS-221MD(商品名)」)内に20時間放置する試験を行った後、
銅の変色度合いを評価した。1、2および3が実用レベルである。
1:試験前後で、硬化膜下のアルミニウムに変色が見られない。
2:試験前後で、基板面積の1%未満が変色。
3:試験前後で、基板面積の1%以上5%未満が変色。
4:試験前後で、基板面積の5%以上10%未満が変色。
5:試験前後で、基板面積の10%以上が変色。
<Evaluation of metal discoloration (aluminum)>
After each photosensitive resin composition is slit-coated on a glass substrate with an aluminum film, it is pre-baked on a hot plate at 90 ° C. for 120 seconds to evaporate the solvent, thereby forming a photosensitive resin composition layer having a thickness of 3.0 μm. did.
Next, the entire surface was exposed with an exposure amount of 100 mJ / cm 2 using MPA 7800CF (high pressure mercury lamp) manufactured by Canon Inc., and heated in an oven at 280 ° C. for 30 minutes to form a cured film.
After performing a test in which this substrate was left in a chamber (Espec Corp., “HAST CAHMBER EHS-221MD (trade name)”) at 60 ° C., 90% humidity, and atmospheric pressure 162.1 kPa (1.6 atm) for 20 hours. ,
The degree of discoloration of copper was evaluated. 1, 2 and 3 are practical levels.
1: Discoloration is not seen in the aluminum under the cured film before and after the test.
2: Less than 1% of the substrate area was discolored before and after the test.
3: 1% or more and less than 5% of the substrate area was discolored before and after the test.
4: Before and after the test, 5% or more and less than 10% of the substrate area was discolored.
5: 10% or more of the substrate area is discolored before and after the test.
Figure JPOXMLDOC01-appb-T000053
Figure JPOXMLDOC01-appb-T000053
Figure JPOXMLDOC01-appb-T000054
Figure JPOXMLDOC01-appb-T000054
Figure JPOXMLDOC01-appb-T000055
Figure JPOXMLDOC01-appb-T000055
Figure JPOXMLDOC01-appb-T000056
Figure JPOXMLDOC01-appb-T000056
Figure JPOXMLDOC01-appb-T000057
Figure JPOXMLDOC01-appb-T000057
 上記結果より、実施例の感光性樹脂組成物は、感度に優れていた。また、耐湿熱性に優れており、金属の変色を抑制できた。また、実施例の感光性樹脂組成物により形成された硬化膜は300℃に対する耐熱性が良好であった。
 これに対し、比較例の感光性樹脂組成物は、感度、耐湿熱性のいずれか一方が劣るものであった。
From the said result, the photosensitive resin composition of an Example was excellent in the sensitivity. Moreover, it was excellent in heat-and-moisture resistance, and the metal discoloration could be suppressed. Moreover, the cured film formed with the photosensitive resin composition of an Example had favorable heat resistance with respect to 300 degreeC.
On the other hand, the photosensitive resin composition of the comparative example was inferior in either sensitivity or wet heat resistance.
<液晶表示装置の作製>
(実施例100)
 特許第3321003号公報の図1に記載のアクティブマトリクス型液晶表示装置において、層間絶縁膜として硬化膜17を以下のようにして形成し、実施例100の液晶表示装置を得た。すなわち、実施例1の感光性樹脂組成物を用い、層間絶縁膜として硬化膜17を形成した。
 特許第3321003号公報の0058段落の基板と層間絶縁膜17の濡れ性を向上させる前処理として、基板をヘキサメチルジシラザン(HMDS)蒸気下に30秒曝し、その後、実施例1の感光性樹脂組成物をスピンコート塗布した後、90℃で2分ホットプレート上でプリベークして溶剤を揮発させ、膜厚3μmの感光性樹脂組成物層を形成した。次に、得られた感光性樹脂組成物層を、キヤノン(株)製 MPA 5500CF(高圧水銀灯)を用いて、10μmφのホールパターンのマスクを介して40mJ/cm(エネルギー強度:20mW/cm、i線)となるよう露光した。そして、露光後の感光性樹脂組成物層を、90℃、2分ホットプレート上で加熱処理した後、アルカリ現像液(0.4%のテトラメチルアンモニウムヒドロキシド水溶液)で23℃/60秒間パドル現像した後、超純水で20秒リンスした。続いて超高圧水銀灯を用いて積算照射量が300mJ/cm(エネルギー強度:20mW/cm、i線)となるように全面露光し、その後、この基板をオーブンにて280℃で30分加熱して硬化膜を得た。
 上記感光性樹脂組成物を塗布する際の塗布性は良好で、露光、現像、焼成の後に得られた硬化膜には、しわやクラックの発生は認められなかった。
 得られた液晶表示装置に対して、駆動電圧を印加したところ、良好な表示特性を示し、信頼性の高い液晶表示装置であることが分かった。
<Production of liquid crystal display device>
(Example 100)
In the active matrix liquid crystal display device described in FIG. 1 of Japanese Patent No. 3321003, a cured film 17 was formed as an interlayer insulating film as follows, and a liquid crystal display device of Example 100 was obtained. That is, using the photosensitive resin composition of Example 1, a cured film 17 was formed as an interlayer insulating film.
As a pretreatment for improving the wettability of the substrate and the interlayer insulating film 17 in paragraph 0058 of Japanese Patent No. 3321003, the substrate is exposed to hexamethyldisilazane (HMDS) vapor for 30 seconds, and then the photosensitive resin of Example 1 is used. After spin-coating the composition, it was prebaked on a hot plate at 90 ° C. for 2 minutes to volatilize the solvent, thereby forming a photosensitive resin composition layer having a thickness of 3 μm. Next, the obtained photosensitive resin composition layer is 40 mJ / cm 2 (energy intensity: 20 mW / cm 2 ) through a hole pattern mask of 10 μmφ using MPA 5500CF (high pressure mercury lamp) manufactured by Canon Inc. , I-line). The exposed photosensitive resin composition layer was heat-treated on a hot plate at 90 ° C. for 2 minutes, and then paddled at 23 ° C./60 seconds with an alkali developer (0.4% tetramethylammonium hydroxide aqueous solution). After developing, it was rinsed with ultrapure water for 20 seconds. Subsequently, the entire surface was exposed using an ultra-high pressure mercury lamp so that the integrated irradiation amount was 300 mJ / cm 2 (energy intensity: 20 mW / cm 2 , i-line), and then this substrate was heated in an oven at 280 ° C. for 30 minutes. Thus, a cured film was obtained.
The applicability when applying the photosensitive resin composition was good, and no wrinkles or cracks were observed in the cured film obtained after exposure, development and baking.
When a driving voltage was applied to the obtained liquid crystal display device, it was found that the liquid crystal display device showed good display characteristics and high reliability.
(実施例101)
 特開2007-328210号公報の図1に記載の液晶表示装置において、有機絶縁膜PASを以下の方法で形成し、液晶表示装置を得た。
 先ず、特開2007-328210号公報に従って、有機絶縁膜PASの直前まで形成したアレイ基板を作製した。
 次に、この基板をヘキサメチルジシラザン蒸気下に30秒曝し、その後、実施例1の感光性樹脂組成物をスリット塗布した後、90℃で2分ホットプレート上でプリベークして溶剤を揮発させ、感光性樹脂組成物層を形成した。次に、得られた感光性樹脂組成物層を、キヤノン(株)製 MPA 7800CFを用いて、8μmφのホールパターンのマスクを介して最適露光量mJ/cm(エネルギー強度:20mW/cm、i線)露光した。そして、露光後の感光性樹脂組成物層を、アルカリ現像液(0.6%のテトラメチルアンモニウムヒドロキシド水溶液)で23℃/60秒間現像した後、超純水で20秒リンスした。続いて超高圧水銀灯を用いて積算照射量が300mJ/cm(エネルギー強度:20mW/cm、i線で計測)となるように全面露光し、その後、この基板をオーブンにて280℃で30分加熱して有機絶縁膜PASを得た。
 以降の工程は、特開2007-328210号公報に従って液晶表示装置を得た。
 本実施例ではPASに耐熱性の高い材料を用いているため、層間絶縁膜IN3を層間絶縁膜IN2と同等の温度で製膜した。これによりIN3を緻密な膜とすることができた。
 得られた液晶表示装置に対して、駆動電圧を印加したところ、非常に良好な表示特性を示し、信頼性の高い液晶表示装置であることが分かった。
(Example 101)
In the liquid crystal display device described in FIG. 1 of JP-A-2007-328210, the organic insulating film PAS was formed by the following method to obtain a liquid crystal display device.
First, according to Japanese Patent Application Laid-Open No. 2007-328210, an array substrate formed up to just before the organic insulating film PAS was produced.
Next, this substrate was exposed to hexamethyldisilazane vapor for 30 seconds, and then the photosensitive resin composition of Example 1 was slit-coated and then pre-baked on a hot plate at 90 ° C. for 2 minutes to volatilize the solvent. A photosensitive resin composition layer was formed. Next, the obtained photosensitive resin composition layer was subjected to an optimum exposure dose mJ / cm 2 (energy intensity: 20 mW / cm 2) through a hole pattern mask of 8 μmφ using MPA 7800CF manufactured by Canon Inc. i-line) exposure. The exposed photosensitive resin composition layer was developed with an alkali developer (0.6% tetramethylammonium hydroxide aqueous solution) at 23 ° C./60 seconds, and then rinsed with ultrapure water for 20 seconds. Subsequently, the whole surface was exposed using an ultra-high pressure mercury lamp so that the integrated irradiation amount was 300 mJ / cm 2 (energy intensity: 20 mW / cm 2 , measured by i-line), and then the substrate was heated at 280 ° C. in an oven at 30 ° C. The organic insulating film PAS was obtained by heating for a few minutes.
In the subsequent steps, a liquid crystal display device was obtained according to Japanese Patent Application Laid-Open No. 2007-328210.
In this embodiment, since a material having high heat resistance is used for PAS, the interlayer insulating film IN3 is formed at the same temperature as the interlayer insulating film IN2. Thereby, IN3 could be made into a dense film.
When a driving voltage was applied to the obtained liquid crystal display device, it was found that the liquid crystal display device showed very good display characteristics and had high reliability.
<有機EL表示装置の作製>
(実施例201)
 薄膜トランジスター(TFT)を用いた有機EL表示装置を以下の方法で作製した(図2参照)。
 ガラス基板6上にボトムゲート型のTFT1を形成し、このTFT1を覆う状態でSi34から成る絶縁膜3を形成した。次に、この絶縁膜3に、ここでは図示を省略したコンタクトホールを形成した後、このコンタクトホールを介してTFT1に接続される配線2(高さ1.0μm)を絶縁膜3上に形成した。この配線2は、TFT1間または、後の工程で形成される有機EL素子とTFT1とを接続するためのものである。
<Production of organic EL display device>
(Example 201)
An organic EL display device using a thin film transistor (TFT) was produced by the following method (see FIG. 2).
A bottom gate type TFT 1 was formed on a glass substrate 6, and an insulating film 3 made of Si 3 N 4 was formed so as to cover the TFT 1. Next, a contact hole (not shown) is formed in the insulating film 3, and then a wiring 2 (height 1.0 μm) connected to the TFT 1 through the contact hole is formed on the insulating film 3. . The wiring 2 is used to connect the TFT 1 with an organic EL element formed between TFTs 1 or in a later process.
 さらに、配線2の形成による凹凸を平坦化するために、配線2による凹凸を埋め込む状態で絶縁膜3上へ平坦化膜4を形成した。絶縁膜3上への平坦化膜4の形成は、実施例1の感光性樹脂組成物を基板上にスピン塗布し、ホットプレート上でプリベーク(90℃/120秒)した後、マスク上から高圧水銀灯を用いてi線(365nm)を45mJ/cm2(エネルギー強度20mW/cm2)照射した後、アルカリ水溶液(0.4%のTMAH水溶液)にて現像してパターンを形成し、超高圧水銀灯を用いて積算照射量が300mJ/cm2(エネルギー強度:20mW/cm2、i線)となるように全面露光し、230℃/30分間の加熱処理を行った。
 感光性樹脂組成物を塗布する際の塗布性は良好で、露光、現像、焼成の後に得られた硬化膜には、しわやクラックの発生は認められなかった。さらに、配線2の平均段差は500nm、作製した平坦化膜4の膜厚は2,000nmであった。
Further, in order to flatten the unevenness due to the formation of the wiring 2, the planarizing film 4 was formed on the insulating film 3 in a state where the unevenness due to the wiring 2 was embedded. The planarizing film 4 is formed on the insulating film 3 by spin-coating the photosensitive resin composition of Example 1 on a substrate, pre-baking (90 ° C./120 seconds) on a hot plate, and then applying high pressure from above the mask. After irradiation with i-line (365 nm) at 45 mJ / cm 2 (energy intensity 20 mW / cm 2 ) using a mercury lamp, development is performed with an alkaline aqueous solution (0.4% TMAH aqueous solution) to form a pattern. Was used to expose the entire surface so that the integrated dose was 300 mJ / cm 2 (energy intensity: 20 mW / cm 2 , i-line), and a heat treatment was performed at 230 ° C./30 minutes.
The applicability when applying the photosensitive resin composition was good, and no wrinkles or cracks were observed in the cured film obtained after exposure, development and baking. Furthermore, the average step of the wiring 2 was 500 nm, and the thickness of the prepared planarizing film 4 was 2,000 nm.
 次に、得られた平坦化膜4上に、ボトムエミッション型の有機EL素子を形成した。まず、平坦化膜4上に、ITOからなる第一電極5を、コンタクトホール7を介して配線2に接続させて形成した。その後、レジストを塗布、プリベークし、所望のパターンのマスクを介して露光し、現像した。このレジストパターンをマスクとして、ITOエッチャント用いたウエットエッチングによりパターン加工を行った。その後、レジスト剥離液(リムーバ100、AZエレクトロニックマテリアルズ社製)を用いて上記レジストパターンを50℃で剥離した。こうして得られた第一電極5は、有機EL素子の陽極に相当する。 Next, a bottom emission type organic EL element was formed on the obtained flattening film 4. First, a first electrode 5 made of ITO was formed on the planarizing film 4 so as to be connected to the wiring 2 through the contact hole 7. Thereafter, a resist was applied, prebaked, exposed through a mask having a desired pattern, and developed. Using this resist pattern as a mask, pattern processing was performed by wet etching using an ITO etchant. Thereafter, the resist pattern was stripped at 50 ° C. using a resist stripper (remover 100, manufactured by AZ Electronic Materials). The first electrode 5 thus obtained corresponds to the anode of the organic EL element.
 次に、第一電極5の周縁を覆う形状の絶縁膜8を形成した。絶縁膜8には、実施例16の感光性樹脂組成物を用い、上記と同様の方法で絶縁膜8を形成した。この絶縁膜8を設けることによって、第一電極5とこの後の工程で形成する第二電極との間のショートを防止することができる。 Next, an insulating film 8 having a shape covering the periphery of the first electrode 5 was formed. As the insulating film 8, the photosensitive resin composition of Example 16 was used, and the insulating film 8 was formed by the same method as described above. By providing this insulating film 8, it is possible to prevent a short circuit between the first electrode 5 and the second electrode formed in the subsequent process.
 さらに、真空蒸着装置内で所望のパターンマスクを介して、正孔輸送層、有機発光層、電子輸送層を順次蒸着して設けた。次いで、基板上方の全面にAlから成る第二電極を形成した。得られた上記基板を蒸着機から取り出し、封止用ガラス板と紫外線硬化型エポキシ樹脂を用いて貼り合わせることで封止した。 Further, a hole transport layer, an organic light emitting layer, and an electron transport layer were sequentially deposited through a desired pattern mask in a vacuum deposition apparatus. Next, a second electrode made of Al was formed on the entire surface above the substrate. The obtained board | substrate was taken out from the vapor deposition machine, and it sealed by bonding together using the glass plate for sealing, and an ultraviolet curable epoxy resin.
 以上のようにして、各有機EL素子にこれを駆動するためのTFT1が接続してなるアクティブマトリックス型の有機EL表示装置が得られた。駆動回路を介して電圧を印加したところ、良好な表示特性を示し、信頼性の高い有機EL表示装置であることが分かった。 As described above, an active matrix type organic EL display device in which each organic EL element is connected to the TFT 1 for driving it was obtained. When a voltage was applied via the drive circuit, it was found that the organic EL display device showed good display characteristics and high reliability.
<タッチパネルの作製>
(実施例301)
 以下に述べる方法によりタッチパネルを作製した。
<第一の透明電極パターンの形成>
<<透明電極層の形成>>
 あらかじめ額縁層が形成された強化処理ガラス(300mm×400mm×0.7mm)の前面板を、真空チャンバー内に導入し、SnO2含有率が10質量%のITOターゲット(インジウム:錫=95:5(モル比))を用いて、DCマグネトロンスパッタリング(条件:基材の温度250℃、アルゴン圧0.13Pa、酸素圧0.01Pa)により、厚さ40nmのITO薄膜を形成し、透明電極層を形成した前面板を得た。ITO薄膜の表面抵抗は80Ω/□であった。
<Production of touch panel>
(Example 301)
A touch panel was produced by the method described below.
<Formation of first transparent electrode pattern>
<< Formation of transparent electrode layer >>
A front plate of tempered glass (300 mm × 400 mm × 0.7 mm) with a frame layer formed in advance is introduced into a vacuum chamber, and an ITO target (indium: tin = 95: 5) with a SnO 2 content of 10% by mass. (Molar ratio)) was used to form an ITO thin film having a thickness of 40 nm by DC magnetron sputtering (conditions: substrate temperature 250 ° C., argon pressure 0.13 Pa, oxygen pressure 0.01 Pa), and a transparent electrode layer was formed. A formed front plate was obtained. The surface resistance of the ITO thin film was 80Ω / □.
 次いで、市販のエッチングレジストをITO上に塗布・乾燥し、エッチングレジスト層を形成した。露光マスク(透明電極パターンを有す石英露光マスク)面とエッチングレジスト層との間の距離を100μmに設定し、露光量50mJ/cm2(i線)でパターン露光したのち、現像液で現像を行い、更に130℃30分間のポストベーク処理を行って、透明電極層とエッチング用光感光性樹脂層パターンとを形成した前面板を得た。 Next, a commercially available etching resist was applied onto ITO and dried to form an etching resist layer. The distance between the exposure mask (quartz exposure mask having a transparent electrode pattern) surface and the etching resist layer is set to 100 μm, pattern exposure is performed at an exposure amount of 50 mJ / cm 2 (i-line), and development is performed with a developer. Then, a post-baking treatment at 130 ° C. for 30 minutes was performed to obtain a front plate on which a transparent electrode layer and a photosensitive resin layer pattern for etching were formed.
 透明電極層とエッチング用光感光性樹脂層パターンとを形成した前面板を、ITOエッチャント(塩酸、塩化カリウム水溶液。液温30℃)を入れたエッチング槽に浸漬し、100秒処理し、エッチングレジスト層で覆われていない露出した領域の透明電極層を溶解除去し、エッチングレジスト層パターンのついた透明電極層パターン付の前面板を得た。
 次に、エッチングレジスト層パターンのついた透明電極層パターン付の前面板を、専用のレジスト剥離液に浸漬し、エッチング用光感光性樹脂層を除去し、額縁層と第一の透明電極パターンとを形成した前面板を得た。
The front plate on which the transparent electrode layer and the photo-sensitive resin layer pattern for etching are formed is immersed in an etching tank containing ITO etchant (hydrochloric acid, potassium chloride aqueous solution, liquid temperature 30 ° C.), treated for 100 seconds, and etched resist. The exposed transparent electrode layer not covered with the layer was dissolved and removed to obtain a front plate with a transparent electrode layer pattern with an etching resist layer pattern.
Next, the transparent electrode layer-patterned front plate with the etching resist layer pattern is immersed in a dedicated resist stripping solution, the etching photosensitive resin layer is removed, and the frame layer and the first transparent electrode pattern A front plate formed was obtained.
<<絶縁層の形成>>
 額縁層と第一の透明電極パターンとを形成した前面板の上に、実施例1の感光性樹脂組成物を塗布・乾燥(膜厚1μm、90℃120秒)し、感光性樹脂組成物層を得た。露光マスク(絶縁層用パターンを有す石英露光マスク)面と感光性樹脂組成物層との間の距離を30μmに設定し、感度評価で求めた最適露光量でパターン露光した。
 次に、2.38質量%のテトラメチルアンモニウムヒドロキシド水溶液により23℃で15秒間液盛り法にて現像し、更に超純水で10秒間リンスした。続いて220℃45分のポストベーク処理を行って、額縁層、第一の透明電極パターン、絶縁層パターンを形成した前面板を得た。
<< Formation of insulating layer >>
On the front plate on which the frame layer and the first transparent electrode pattern were formed, the photosensitive resin composition of Example 1 was applied and dried (film thickness: 1 μm, 90 ° C., 120 seconds) to form a photosensitive resin composition layer. Got. The distance between the surface of the exposure mask (quartz exposure mask having a pattern for insulating layer) and the photosensitive resin composition layer was set to 30 μm, and pattern exposure was performed with the optimum exposure amount obtained by sensitivity evaluation.
Next, the film was developed with a 2.38 mass% tetramethylammonium hydroxide aqueous solution at 23 ° C. for 15 seconds and rinsed with ultrapure water for 10 seconds. Subsequently, a post-baking process at 220 ° C. for 45 minutes was performed to obtain a front plate on which a frame layer, a first transparent electrode pattern, and an insulating layer pattern were formed.
<第二の透明電極パターンの形成>
<<透明電極層の形成>>
 上記第一の透明電極パターンの形成と同様にして、絶縁層パターンまで形成した前面板をDCマグネトロンスパッタリング処理し(条件:基材の温度50℃、アルゴン圧0.13Pa、酸素圧0.01Pa)、厚さ80nmのITO薄膜を形成し、透明電極層を形成した前面板を得た。ITO薄膜の表面抵抗は110Ω/□であった。
 更に、第一の透明電極パターンの形成と同様にして、エッチングし、エッチングレジスト層を除去することにより、額縁層、第一の透明電極パターン、実施例1の感光性樹脂組成物用いて形成した絶縁層パターン、第二の透明電極パターンを形成した前面板を得た。
<Formation of second transparent electrode pattern>
<< Formation of transparent electrode layer >>
In the same manner as the formation of the first transparent electrode pattern, the front plate formed up to the insulating layer pattern was subjected to DC magnetron sputtering treatment (conditions: substrate temperature 50 ° C., argon pressure 0.13 Pa, oxygen pressure 0.01 Pa). An ITO thin film having a thickness of 80 nm was formed to obtain a front plate on which a transparent electrode layer was formed. The surface resistance of the ITO thin film was 110Ω / □.
Furthermore, in the same manner as the formation of the first transparent electrode pattern, etching was performed and the etching resist layer was removed to form the frame layer, the first transparent electrode pattern, and the photosensitive resin composition of Example 1. A front plate on which an insulating layer pattern and a second transparent electrode pattern were formed was obtained.
<第一及び第二の透明電極パターンとは別の導電性要素の形成>
 上記第一、及び、第二の透明電極パターンの形成と同様にして、第一の透明電極パターン、実施例1の感光性樹脂組成物を用いて形成した絶縁層パターン、第二の透明電極パターンを形成した前面板をDCマグネトロンスパッタリング処理し、厚さ200nmのアルミニウム(Al)薄膜を形成した前面板を得た。
 更に、第一の透明電極パターンの形成と同様にして、エッチングし、エッチングレジスト層を除去することにより、額縁層、第一の透明電極パターン、実施例1の感光性樹脂組成物を用いて形成した絶縁層パターン、第二の透明電極パターン、第一及び第二の透明電極パターンとは別の導電性要素を形成した前面板を得た。
<Formation of Conductive Element Different from First and Second Transparent Electrode Pattern>
Similar to the formation of the first and second transparent electrode patterns, the first transparent electrode pattern, the insulating layer pattern formed using the photosensitive resin composition of Example 1, and the second transparent electrode pattern The front plate on which was formed was subjected to DC magnetron sputtering to obtain a front plate on which an aluminum (Al) thin film having a thickness of 200 nm was formed.
Further, etching is performed in the same manner as the formation of the first transparent electrode pattern, and the etching resist layer is removed to form the frame layer, the first transparent electrode pattern, and the photosensitive resin composition of Example 1. A front plate on which conductive elements different from the insulating layer pattern, the second transparent electrode pattern, and the first and second transparent electrode patterns were formed was obtained.
<透明保護層の形成>
 絶縁層の形成と同様にして、上記第一及び第二の透明電極パターンとは別の導電性要素まで形成した前面板に、実施例1の感光性樹脂組成物を塗布・乾燥(膜厚1μm、90℃120秒)し、感光性樹脂組成物膜を得た。更に、露光、加熱処理、現像、ポスト露光(1,000mJ/cm2)、ポストベーク処理を行って、額縁層、第一の透明電極パターン、実施例1の感光性樹脂組成物を用いて形成した絶縁層パターン、第二の透明電極パターン、第一及び第二の透明電極パターンとは別の導電性要素の全てを覆うように実施例1の感光性樹脂組成物を用いて形成した絶縁層(透明保護層)を積層した前面板を得た。
<Formation of transparent protective layer>
In the same manner as the formation of the insulating layer, the photosensitive resin composition of Example 1 was applied and dried (film thickness: 1 μm) on the front plate formed up to the conductive element different from the first and second transparent electrode patterns. , 90 ° C. for 120 seconds) to obtain a photosensitive resin composition film. Further, exposure, heat treatment, development, post-exposure (1,000 mJ / cm 2 ), and post-bake treatment are performed to form the frame layer, the first transparent electrode pattern, and the photosensitive resin composition of Example 1. Insulating layer pattern, second transparent electrode pattern, insulating layer formed using the photosensitive resin composition of Example 1 so as to cover all the conductive elements different from the first and second transparent electrode patterns A front plate laminated with a (transparent protective layer) was obtained.
<タッチパネルの作製>
 特開2009-47936号公報に記載の方法で製造した液晶表示素子に、先に製造した前面板を貼り合わせ、公知の方法で静電容量方式のタッチパネルを構成要素として備えたタッチパネルを作製した。
<Production of touch panel>
A liquid crystal display device manufactured by the method described in Japanese Patent Application Laid-Open No. 2009-47936 was bonded to the previously manufactured front plate, and a touch panel including a capacitive touch panel as a constituent element was manufactured by a known method.
<前面板、及び、タッチパネルの評価>
 第一の透明電極パターン、第二の透明電極パターン、及び、これらとは別の導電性要素の、各々の導電性には問題がなく、一方で、第一の透明電極パターンと第二の透明電極パターンの間では絶縁性を有しており、タッチパネルとして良好な表示特性が得られた。
<Evaluation of front plate and touch panel>
There is no problem in the conductivity of each of the first transparent electrode pattern, the second transparent electrode pattern, and other conductive elements, while the first transparent electrode pattern and the second transparent electrode pattern Between the electrode patterns, there was insulation, and good display characteristics as a touch panel were obtained.
 1:TFT、2:配線、3:絶縁膜、4:平坦化膜、5:第一電極、6:ガラス基板、7:コンタクトホール、8:絶縁膜、10:液晶表示装置、12:バックライトユニット、14,15:ガラス基板、16:TFT、17:硬化膜、18:コンタクトホール、19:ITO透明電極、20:液晶、22:カラーフィルター、30:静電容量方式のタッチパネル、31:前面板、32:額縁層、33:第一の透明電極パターン、33a:パッド部分、33b:接続部分、34:第二の透明電極パターン、35:絶縁層、36:導電性要素、37:透明保護層、38:開口部、CT:対向電極、GI:ゲート絶縁膜、GT:ゲート電極、IN1:第1の層間絶縁膜、IN2:第2の層間絶縁膜、IN3:第3の層間絶縁膜、PAS:有機絶縁膜、PS:半導体膜、PX:画素電極、RAL:反射膜、SD1:ドレイン電極、SD2:ソース電極、SUB1:ガラス基板、UC:下地膜 1: TFT, 2: wiring, 3: insulating film, 4: planarization film, 5: first electrode, 6: glass substrate, 7: contact hole, 8: insulating film, 10: liquid crystal display device, 12: backlight Units 14, 15: glass substrate, 16: TFT, 17: cured film, 18: contact hole, 19: ITO transparent electrode, 20: liquid crystal, 22: color filter, 30: capacitive touch panel, 31: front Face plate, 32: Frame layer, 33: First transparent electrode pattern, 33a: Pad portion, 33b: Connection portion, 34: Second transparent electrode pattern, 35: Insulating layer, 36: Conductive element, 37: Transparent protection Layer, 38: opening, CT: counter electrode, GI: gate insulating film, GT: gate electrode, IN1: first interlayer insulating film, IN2: second interlayer insulating film, IN3: third interlayer insulating film, PAS: Organic Film, PS: semiconductor film, PX: pixel electrode, RAL: reflective film, SD1: drain electrode, SD2: source electrode, SUB1: glass substrate, UC: base film

Claims (16)

  1.  成分Aとして、下記1および2の少なくとも一方を満たすポリシロキサン成分、
     1:構成単位a1として、カルボキシ基が酸分解性基で保護された基、フェノール性水酸基が酸分解性基で保護された基、および、シラノール基が酸分解性基で保護された基から選ばれる少なくとも1種の基を有する構成単位と、構成単位a2として、架橋性基を有する構成単位とを有するポリシロキサンを含むポリシロキサン成分、
     2:構成単位a1として、カルボキシ基が酸分解性基で保護された基、フェノール性水酸基が酸分解性基で保護された基、および、シラノール基が酸分解性基で保護された基から選ばれる少なくとも1種の基を有する構成単位を有するポリシロキサンと、構成単位a2として、架橋性基を有する構成単位を有するポリシロキサンとを含むポリシロキサン成分、
     成分Bとして、pKaが3以下の酸を発生する光酸発生剤、
     成分Cとして、溶剤、ならびに、
     成分Sとして、ブロックイソシアネート化合物を含有する感光性樹脂組成物。
    As component A, a polysiloxane component that satisfies at least one of the following 1 and 2,
    1: The structural unit a1 is selected from a group in which a carboxy group is protected by an acid-decomposable group, a group in which a phenolic hydroxyl group is protected by an acid-decomposable group, and a group in which a silanol group is protected by an acid-decomposable group A polysiloxane component comprising a polysiloxane having a structural unit having at least one kind of group and a structural unit having a crosslinkable group as the structural unit a2.
    2: The structural unit a1 is selected from a group in which a carboxy group is protected with an acid-decomposable group, a group in which a phenolic hydroxyl group is protected with an acid-decomposable group, and a group in which a silanol group is protected with an acid-decomposable group A polysiloxane component comprising a polysiloxane having a structural unit having at least one kind of group and a polysiloxane having a structural unit having a crosslinkable group as the structural unit a2.
    As a component B, a photoacid generator that generates an acid having a pKa of 3 or less,
    As component C, a solvent, and
    A photosensitive resin composition containing a blocked isocyanate compound as component S.
  2.  感光性樹脂組成物の全固形分に対して、前記ブロックイソシアネート化合物を、0.1~15質量%含有する、請求項1に記載の感光性樹脂組成物。 The photosensitive resin composition according to claim 1, comprising 0.1 to 15% by mass of the blocked isocyanate compound based on the total solid content of the photosensitive resin composition.
  3.  前記ブロックイソシアネート化合物は、トリレンジイソシアネート、ジフェニルメタンジイソシアネート、ヘキサメチレンジイソシアネートおよびイソホロンジイソシアネートから選ばれるイソシアネート化合物、ならびに、前記イソシアネート化合物の多量体から選ばれる少なくとも1種の化合物のイソシアネート基を保護したものである、請求項1又は2に記載の感光性樹脂組成物。 The blocked isocyanate compound is obtained by protecting an isocyanate group of at least one compound selected from an isocyanate compound selected from tolylene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate and isophorone diisocyanate, and a multimer of the isocyanate compound. The photosensitive resin composition of Claim 1 or 2.
  4.  前記ブロックイソシアネート化合物は、オキシム化合物、ラクタム化合物、フェノール化合物、アルコール化合物、アミン化合物、活性メチレン化合物、および、ピラゾール化合物から選ばれる化合物により、イソシアネート基が保護されてブロック構造が形成された化合物である、請求項1~3のいずれか1項に記載の感光性樹脂組成物。 The blocked isocyanate compound is a compound in which a block structure is formed by protecting an isocyanate group with a compound selected from an oxime compound, a lactam compound, a phenol compound, an alcohol compound, an amine compound, an active methylene compound, and a pyrazole compound. The photosensitive resin composition according to any one of claims 1 to 3.
  5.  前記ブロックイソシアネート化合物の分子量が100~2000である、請求項1~4のいずれか1項に記載の感光性樹脂組成物。 The photosensitive resin composition according to claim 1, wherein the molecular weight of the blocked isocyanate compound is 100 to 2,000.
  6.  前記ポリシロキサン成分が有する前記酸分解性基は、アセタール基である請求項1~5のいずれか1項に記載の感光性樹脂組成物。 The photosensitive resin composition according to any one of claims 1 to 5, wherein the acid-decomposable group of the polysiloxane component is an acetal group.
  7.  前記構成単位a1が、下記一般式a1-1で表される構成単位、および、下記一般式a1-2で表される構成単位から選ばれる少なくとも1種である、請求項1~6のいずれか1項に記載の感光性樹脂組成物;
    Figure JPOXMLDOC01-appb-C000001
     一般式a1-1、および、一般式a1-2中、aは0または1を表し、
     RおよびRは、それぞれ独立に、水素原子、アルキル基またはアリール基を表し、RおよびRの少なくとも一方は、アルキル基またはアリール基を表し、Rは、アルキル基またはアリール基を表し、RまたはRと、Rとが連結して環状エーテルを形成してもよく、
     Rは、アルキル基、アリール基、または、アラルキル基を表し、
     Lは、単結合または2価の連結基を表し、
     Lは、単結合または2価の連結基を表し、
     Rは、アルキル基またはハロゲン原子を表し、
     m1は、0~4の整数を表す。
    The structural unit a1 is at least one selected from a structural unit represented by the following general formula a1-1 and a structural unit represented by the following general formula a1-2. The photosensitive resin composition according to item 1;
    Figure JPOXMLDOC01-appb-C000001
    In general formula a1-1 and general formula a1-2, a represents 0 or 1,
    R 1 and R 2 each independently represents a hydrogen atom, an alkyl group or an aryl group, at least one of R 1 and R 2 represents an alkyl group or an aryl group, and R 3 represents an alkyl group or an aryl group. R 1 or R 2 and R 3 may be linked to form a cyclic ether,
    R 4 represents an alkyl group, an aryl group, or an aralkyl group,
    L 1 represents a single bond or a divalent linking group,
    L 2 represents a single bond or a divalent linking group,
    R x represents an alkyl group or a halogen atom,
    m1 represents an integer of 0 to 4.
  8.  前記ポリシロキサン成分が有する架橋性基が、環状エーテル、および、エチレン性不飽和結合を有する基から選ばれる少なくとも1種である、請求項1~7のいずれか1項に記載の感光性樹脂組成物。 The photosensitive resin composition according to any one of claims 1 to 7, wherein the crosslinkable group of the polysiloxane component is at least one selected from cyclic ether and a group having an ethylenically unsaturated bond. object.
  9.  前記ポリシロキサンは、カルボキシ基およびフェノール性水酸基から選ばれる少なくとも1種の基を有する構成単位をさらに含む、請求項1~8のいずれか1項に記載の感光性樹脂組成物。 The photosensitive resin composition according to any one of claims 1 to 8, wherein the polysiloxane further comprises a structural unit having at least one group selected from a carboxy group and a phenolic hydroxyl group.
  10.  前記光酸発生剤が、オニウム塩化合物、オキシムスルホネート化合物、および、イミドスルホネート化合物から選ばれる少なくとも1種である、請求項1~9のいずれか1項に記載の感光性樹脂組成物。 The photosensitive resin composition according to any one of claims 1 to 9, wherein the photoacid generator is at least one selected from an onium salt compound, an oxime sulfonate compound, and an imide sulfonate compound.
  11.  請求項1~10のいずれか1項に記載の感光性樹脂組成物を基板上に塗布する工程、
     前記基板に塗布された感光性樹脂組成物から溶剤を除去する工程、
     溶剤が除去された感光性樹脂組成物を露光する工程、
     露光された感光性樹脂組成物を現像する工程、および、
     現像された感光性樹脂組成物を熱硬化する工程、
    を含む硬化膜の製造方法。
    Applying the photosensitive resin composition according to any one of claims 1 to 10 on a substrate;
    Removing the solvent from the photosensitive resin composition applied to the substrate;
    Exposing the photosensitive resin composition from which the solvent has been removed,
    Developing the exposed photosensitive resin composition; and
    A step of thermosetting the developed photosensitive resin composition;
    The manufacturing method of the cured film containing this.
  12.  請求項1~10のいずれか1項に記載の感光性樹脂組成物を硬化した硬化膜。 A cured film obtained by curing the photosensitive resin composition according to any one of claims 1 to 10.
  13.  層間絶縁膜である、請求項12に記載の硬化膜。 The cured film according to claim 12, which is an interlayer insulating film.
  14.  請求項12または13に記載の硬化膜を有する、液晶表示装置。 A liquid crystal display device having the cured film according to claim 12.
  15.  請求項12または13に記載の硬化膜を有する、有機エレクトロルミネッセンス表示装置。 An organic electroluminescence display device having the cured film according to claim 12 or 13.
  16.  請求項12または13に記載の硬化膜を有する、タッチパネル。 A touch panel having the cured film according to claim 12 or 13.
PCT/JP2015/077288 2014-09-29 2015-09-28 Photosensitive resin composition, method for producing cured film, cured film, liquid crystal display device, organic electroluminescent display device, and touch panel WO2016052390A1 (en)

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