WO2016049980A1 - 一种异构高效光伏焊带及导电基带的制备方法和生产线 - Google Patents

一种异构高效光伏焊带及导电基带的制备方法和生产线 Download PDF

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WO2016049980A1
WO2016049980A1 PCT/CN2014/093136 CN2014093136W WO2016049980A1 WO 2016049980 A1 WO2016049980 A1 WO 2016049980A1 CN 2014093136 W CN2014093136 W CN 2014093136W WO 2016049980 A1 WO2016049980 A1 WO 2016049980A1
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coupling platform
conductive base
shaped groove
base tape
groove
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PCT/CN2014/093136
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English (en)
French (fr)
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钱海鹏
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凡登（江苏）新型材料有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention belongs to the technical field of photovoltaic welding strip processing, and particularly relates to a preparation method and a production line of a heterogeneous high-efficiency photovoltaic welding strip and a conductive base belt.
  • Solder ribbons are important raw materials in the soldering process of photovoltaic modules. Solder ribbons are usually connected to each other by means of soldering or conductive adhesive bonding, and the quality of the soldering strips will be good. Directly affecting the collection efficiency of photovoltaic module currents has a great impact on the power of photovoltaic modules. How to increase the conversion rate of the battery sheet and reduce the fragmentation rate by isomerization of the solder ribbon has always been one of the research topics in the solder ribbon industry.
  • Chinese patent CN101789452A provides a tin-coated solder ribbon comprising a copper strip and a tin-coated layer on its surface, the tin-coated layer having a uniformly distributed pit-like body.
  • This kind of solder band causes the sunlight to diffusely reflect in the pit, which improves the energy of receiving sunlight.
  • the pit-like body only diffusely reflects, the proportion of sunlight reflected back to the cell sheet is small, and the conversion rate is limited; in addition, the pit is prepared during the tin-coating process, which generates an uneven solder layer, and There will be a phenomenon that the welding of the battery piece is not strong, and a virtual welding occurs.
  • Chinese patent CN102569470A provides a V-groove that is prepared perpendicular to the length of the strip on the surface of the strip to reduce the crack and chip rate of the cell.
  • the V-shaped groove of the patented welding tape is perpendicular to the longitudinal direction and there is no significant spacing between the V-shaped grooves, so the welding tape is unstable when welded to the battery sheet, and the welding is not strong.
  • Chinese patent CN202004027U provides a solder ribbon with a zigzag-shaped reflective structure formed on the front side of the strip with a plurality of grooves extending along the length of the strip, and the structure is used for incident welding. Bring sunlight to the cell to effectively reflect the power of the component.
  • the solder ribbon is unstable when soldered to the battery sheet, and the soldering is not strong, and the groove structure along the length of the solder strip has a large cross-sectional area loss in the case of the same thickness of the solder ribbon, thereby increasing the resistance. Not conducive to the improvement of power.
  • the inventors have found that the ability of retroreflective multiplexing is achieved even when the groove angle is set during the production of the ribbon to reflect the reflected light passing through the glass/air surface of the assembly to the extent that the surface of the cell is totally reflected. not ideal.
  • China Patent 201410236303.3 therefore proposes that the V-groove depth should be between 0.055 mm and 0.15 mm, which is considered to cause the envelope thickness of the solder ribbon to be too large when the V-groove depth exceeds 0.15 mm, and is interrupted during the baseband preparation process.
  • the line risk is high.
  • the technical problem to be solved by the present invention is to solve the problem that the V-groove strip is over-welded due to the high fluidity of the solder during manual soldering and soldering of the solder strip after the solder strip is soaked.
  • the problem of damage while avoiding the influence of excessive thick envelope on the production efficiency and weathering safety of the components, reduces the risk of solder joints and solder joints during the welding of the isolating ribbon.
  • the invention provides a preparation method and a production line of a heterogeneous high-efficiency photovoltaic welding strip and a conductive base tape.
  • a heterogeneous high-efficiency photovoltaic welding strip comprising a conductive base tape, the conductive base tape being a metal elemental or alloy material having two upper and lower wide surfaces,
  • the conductive base tape has at least one wide surface distributed with a V-shaped groove and a coupling platform, and the V-shaped groove has a depth h of 0.15 mm ⁇ h ⁇ 0.25 mm;
  • the coupling platform has a diameter of the largest inscribed circle of more than 0.05 mm, A platform having a maximum length along the length of the conductive tape of less than 50 mm.
  • the above technical solution makes a V-shaped groove on the surface of the conductive base tape, and on the other hand, a part of the surface reflected light can be re-reflected to the surface of the battery through the glass/air surface of the component, thereby realizing the multiplexing of the reflected light on the surface of the partial solder ribbon.
  • the actual thickness of the solder ribbon is partially reduced by the distribution of the V-shaped grooves, thereby reducing the stress between the solder ribbon and the battery sheet after the soldering because the solder ribbon is much higher than the thermal expansion and contraction amplitude of the battery sheet.
  • the solution also has a coupling platform reserved between the V-shaped grooves, thereby simultaneously solving the problem of the bonding fastness between the welding strip and the battery sheet.
  • the inventors have found that when using the mainstream automatic string welding machine currently on the market, it is necessary to ensure that the solder has sufficient welding fastness to the back silver surface of the battery during the welding process, and the diameter of the largest inscribed circle of the coupling platform must be not less than 0.05 mm. .
  • the maximum length of the coupling platform along the length of the conductive baseband is less than 50mm.
  • V-groove density/band reflective multiplexing capability is not only lost, but the effect of reducing the welding debris rate through the V-shaped groove is greatly reduced: because V The distance between the grooves is already greater than 30% of the width of the general polycrystalline cell, and the stress of the strip/cell accumulated during the soldering process between adjacent V-grooves is difficult to be released.
  • the inventors have found that under the existing solder ribbon soldering process conditions, the solder layer on the surface of the solder ribbon will naturally flow after soldering, so that some of the solder on the V-groove sidewall and the coupling platform will flow into the V-groove, especially After the soldering strip is soaked by the flux, when the V-groove depth is not enough, the V-shaped groove structure is more seriously damaged, resulting in a large reduction in the reflective multiplexing capability, but if the V-shaped groove is too deep, the envelope of the soldering strip will be caused. Excessive thickness can easily lead to an increase in the rate of debris during lamination and increase the risk of component weathering safety under existing component process conditions.
  • the depth h of the V-groove of the base strip of the isomerized ribbon is selected to be 0.15 mm ⁇ h ⁇ 0.25 mm, the isomeric ribbon after the flux immersion can be effectively solved. Due to the high fluidity of the solder during the soldering process, the V-groove structure is over-filled and damaged, and the seamless solderability of the solder ribbon can be avoided, and the production efficiency and weathering safety of the photovoltaic module are affected. Thereby achieving an optimized balance between the reflective multiplexing capability of the isomeric ribbon, the interconnected weathering safety, and the seamless high weldability.
  • the thickness of the solder layer is 10 ⁇ m
  • the coupling platform is a parallelogram
  • the diameter of the inscribed circle of the coupling platform is 250 ⁇ m
  • the angle of the V-groove is 120 degrees.
  • the V-groove depth is not less than 0.15 mm
  • the ratio of the depth of the V-groove filling due to the flow of the solder to the total depth of the V-groove is less than 25%. Therefore, the problem that the V-groove structure is excessively damaged, resulting in excessive loss of the reflective multiplexing capability, can be solved more effectively.
  • By adding the coupling platform shaping process in the baseband preparation process of the isomeric ribbon it is possible to solve the problem that the V-groove observed in the past is too deep, which tends to cause an increase in the risk of the virtual welding and the leakage welding during the welding process.
  • the above groove depth range does not increase the risk of soldering and soldering during the soldering process;
  • the envelope thickness of the isotropic ribbon can be controlled to be less than 0.38 mm.
  • the EVA thickness is between 0.45mm and 0.8mm, and the V-groove strip can allow the liquid EVA before the cross-linking process to occur freely in the solder ribbon. Flowing on both sides, when the envelope thickness of the isomerized ribbon is below 0.38 mm, the effect of the battery fragmentation rate during lamination and the weathering safety of the packaged components is negligible.
  • the conductive base tape has at least one wide surface formed by the V-shaped groove and the coupling platform, that is, the same wide surface is composed only of the V-shaped groove and the coupling platform.
  • the V-shaped groove is a linear V-shaped groove in which the intersection of the two oblique sides of the groove is a straight line.
  • a coupling platform is left between adjacent V-shaped grooves.
  • the depth h of the V-shaped groove is 0.16 mm ⁇ h ⁇ 0.2 m.
  • the diameter of the largest inscribed circle of the coupling platform is greater than 0.1 mm, and the maximum length of the coupling platform along the length direction of the conductive base tape is less than 20 mm.
  • the diameter of the largest inscribed circle of the coupling platform is not less than 0.15 mm, and the maximum length of the coupling platform along the length direction of the conductive base tape is less than 5 mm.
  • the ratio of the preferred coupling platform to the reflective V-groove can be obtained by soldering or bonding and satisfying the strip peeling force of the strip.
  • the inclined angle of the linear V-shaped groove and the conductive base tape in the longitudinal direction is 15° to 75°.
  • the angle is between 75°-90°, the reflection of the V-shaped groove will re-reflect through the glass/air surface and will fall back to the surface of the ribbon most or all, so as not to be reused by the cell, and The effective conductive cross-sectional area of the solder ribbon is greatly reduced, resulting in an increase in the practical resistance of the solder ribbon, resulting in a higher package electrical loss.
  • the V-groove direction at this time is beneficial to the release of the internal stress after the welding of the welding strip, so that the risk of welding debris caused by the thermal expansion and contraction of the welding strip can be better reduced; when the angle is between 0°-15°
  • the reflection of the V-shaped groove is re-reflected by the glass/air surface, it will fall back to the surface of the cell sheet most or all, which is beneficial to the multiplexing of the light, and the effective cross-sectional area of the solder ribbon is reduced small/the package electric loss is small.
  • the surface area ratio of the surface area of the coupling platform to the surface of the conductive base is 5% ⁇ m ⁇ 95%.
  • the area ratio m of the surface area of the coupling platform to the surface of the conductive layer is 10% ⁇ m ⁇ 35%.
  • the linear V-shaped grooves are distributed in parallel on the same wide face.
  • the linear V-shaped grooves are distributed across the same wide face.
  • the shape of the coupling platform is a parallelogram or a trapezoid.
  • the solder layer on the surface will naturally flow, so that the angle of the actual light-emitting groove after the soldering is completed becomes larger.
  • the V-shaped angle of the V-shaped groove is generally selected between 75° and 138° to ensure that the reflective surface of the preferred welding strip is re-reflected through the glass/air surface to the battery surface. The efficiency of the face.
  • the coupling platform is not lower than the highest point of the V-shaped groove.
  • the outer surface of the solder ribbon has a tin-based solder layer so that it can be soldered directly; and a protective layer can be prepared between the conductive base tape and the tin-based solder layer to prevent the solder ribbon from aging and reliable in performance.
  • the above-mentioned baseband fabrication scheme is also of great significance for the method of preparing a solder ribbon by using conventional hot-coated solder: when the solder ribbon is produced by conventional hot-coated solder, although the heterogeneity of the surface of the baseband is substantially filled, it is difficult to realize the solder ribbon. Reflective multiplexing of the surface, but with the V-groove base tape of the present scheme, the welding stress can still be reduced, and at the same time, the effective conductive cross-sectional area is not excessively lost due to the existence of the V-shaped groove.
  • the outer surface of the solder ribbon may also have a conductive reflective layer, which is suitable for the case where the solder ribbon and the battery sheet are combined by non-welding (such as conductive adhesive bonding).
  • a transition layer is also prepared between the solder layer or the conductive light reflecting layer and the conductive base tape.
  • a method for preparing a conductive base tape of a photovoltaic welding strip mainly comprises the following steps:
  • the copper wire is rolled to form a flat belt having two wide surfaces;
  • step b at least one wide surface roll on the flat belt obtained in step a forms a V-shaped groove, the depth of the V-shaped groove is greater than 0.15 mm;
  • Coupling platform shaping further rolling the semi-finished product of step b using a pair of optical rollers to obtain a base strip having V-shaped grooves and a coupling platform distributed on at least one wide surface, wherein the depth h of the V-shaped groove is 0.15mm ⁇ h ⁇ 0.25mm; the coupling platform is a platform whose diameter of the largest inscribed circle is not less than 0.05mm, and the maximum length along the length of the baseband is less than 50mm.
  • step b because the groove depth is greater than 0.15 mm, easily causes excessive extrusion between two adjacent V-shaped grooves, causing the reserved welding platform to bulge; the invention increases the coupling platform shaping In the process, the bulging generated in the step b is shaped into a coupling platform with high consistency, thereby solving the problem that the prior isomerized welding tape is prone to the occurrence of the virtual welding and the leakage welding during the welding application.
  • the process control is based on the heat treatment process of the conventional flat base tape having the same thickness as the thinnest portion of the base tape.
  • the heat transfer tape tension is less than or equal to the heat treatment tape tension of the reference flat base tape, and the groove can be solved. Deep disconnection risk issues.
  • the preparation line for preparing a conductive base tape for a photovoltaic welding strip comprises at least the following equipment: a copper wire roller press, a V-shaped groove roller press and a coupling platform shaping roller press.
  • the copper wire roller press comprises a pair of light rollers; the V-shaped groove roller press comprises a pattern roll and a light roll, or a pair of pattern rolls; the coupling platform setting roll press comprises a pair of light rolls.
  • a heterogeneous high-efficiency photovoltaic welding strip disclosed by the present invention by preparing a V-groove of a preferred depth on the surface of a conductive base tape, and a coupling platform preferably designed to simultaneously achieve partial reflective multiplexing of the surface of the solder ribbon, reducing welding stress, Guaranteed welding strength and converging electric leakage caused by balanced slotting provide a cost-effective custom design, and through the V-groove depth design and the improvement of the conductive base tape preparation process, without affecting the direct solderability of the ribbon and the cell
  • the V-groove structure after soldering is less affected by the solder flowing into the slot, thus greatly improving the reflective multiplexing in practical applications. effectiveness.
  • FIG. 1 is a schematic view showing the structure of a first embodiment of a heterogeneous high-efficiency photovoltaic ribbon of the present invention.
  • Figure 2 is a cross-sectional view taken along line A-A of Figure 1.
  • Fig. 3 is a view showing the metallographic structure of the welding tape of the first embodiment after welding.
  • FIG. 4 is a schematic view showing the structure of a conductive base tape in Embodiment 2 of the heterogeneous high-efficiency photovoltaic ribbon of the present invention.
  • Figure 5 is a schematic view showing the structure of a conductive base tape in Embodiment 3 of the heterogeneous high-efficiency photovoltaic ribbon of the present invention.
  • Figure 6 is a schematic view showing the structure of a conductive base tape in Embodiment 4 of the heterogeneous high-efficiency photovoltaic ribbon of the present invention.
  • Figure 7 is a schematic view showing the structure of a conductive base tape in Embodiment 5 of the heterogeneous high-efficiency photovoltaic ribbon of the present invention.
  • Figure 8 is a schematic view showing the structure of a conductive base tape in Embodiment 6 of the heterogeneous high-efficiency photovoltaic ribbon of the present invention.
  • Figure 9 is a schematic view showing the structure of a conductive base tape in Embodiment 7 of the heterogeneous high-efficiency photovoltaic ribbon of the present invention.
  • Figure 10 is a schematic view showing the structure of a conductive base tape in Embodiment 8 of the heterogeneous high-efficiency photovoltaic ribbon of the present invention.
  • Figure 11 is a schematic view showing the structure of a conductive base tape in Embodiment 9 of the heterogeneous high-efficiency photovoltaic ribbon of the present invention.
  • Figure 12 is a schematic view showing the structure of a conductive base tape in Embodiment 10 of the heterogeneous high-efficiency photovoltaic ribbon of the present invention.
  • Figure 13 is a schematic view showing a production line of a conductive base tape of the present invention.
  • the depth h of the V-groove of the invention is not less than 0.15 mm, firstly because under the existing welding strip welding process, the solder layer on the surface of the soldering strip will naturally flow after welding, so the V-shaped groove side wall and the coupling platform A part of the solder will flow into the V-shaped groove. If the V-shaped groove is too shallow, the V-shaped groove will be mostly blocked by the solder, which loses the original intention of the reflective design.
  • the thickness of the solder layer is 10 ⁇ m
  • the coupling platform is a parallelogram
  • the diameter of the inscribed circle of the coupling platform is 250 ⁇ m
  • the angle of the V-shaped groove is 120 degrees.
  • the V-groove depth is not less than 0.15 mm
  • the ratio of the depth of the V-groove filling due to the flow of the solder to the total depth of the V-groove is less than 25%. Therefore, the problem that the V-groove structure is excessively damaged, resulting in excessive loss of the reflective multiplexing capability, can be solved more effectively.
  • the V-shaped groove is too deep, which will lead to excessive thickness of the substrate after processing, and there are soldering problems of the solder ribbon and weathering safety of the component.
  • the depth h of the linear V-groove is generally selected to be no more than 0.25 mm.
  • TU1 oxygen-free copper is selected as the conductive base belt 1, as shown in FIG. 1 and FIG. 2, having a V-shaped groove 3 on one wide surface thereof, and a parallelogram-shaped coupling platform 4 is left between adjacent V-shaped grooves 3,
  • the height of the coupling platform 4 is equal to the highest point of the V-shaped groove 3, the diameter of the largest inscribed circle of the coupling platform 4 is 0.25 mm, the V-shaped groove 3 exists on the upper and lower sides of the coupling platform 4, and there are no V on the left and right sides.
  • the parallelogram has two sides parallel to the direction of the V-shaped groove 3; the depth h of the V-shaped groove 3 is 0.17 mm; and the surface area ratio of the surface area of the coupling platform 4 to the wide surface of the conductive base tape 1 is 25%.
  • the envelope thickness H of the heterogeneous high-efficiency photovoltaic ribbon is 0.35 mm.
  • the tin-lead solder was uniformly prepared by electroplating onto the above-mentioned conductive base tape to prepare a heterogeneous high-efficiency photovoltaic ribbon with a solder layer thickness d of 10 ⁇ m.
  • the V-groove depth of the strip is 0.135 mm.
  • FIG. 3 it is a metallographic structure diagram of the solder ribbon of this embodiment after soldering, and only a small portion of the V-shaped groove in the figure is filled with solder flowing to the bottom of the groove.
  • the power of a set of battery components using this photovoltaic ribbon is 4W higher than that of components prepared using conventional solder ribbons, an increase of 1.6%.
  • the welding force of the welding strip is pulled by the force gauge along the direction of the battery sheet 45 degrees until the ribbon is removed from the battery.
  • the tensile force required for the peeling of the sheet is generally greater than 3N.
  • the welding force of the strip in this embodiment is greater than 4N, which satisfies the requirements.
  • the fragmentation rate caused by the thermal expansion and contraction of the ribbon is less than one thousandth.
  • the production line of the conductive base tape 1 of the present embodiment includes the following devices in sequence: a pay-off machine 10, a copper wire roller press 20, a V-shaped groove roller press 30, and a coupling platform shaping roller press 40. , heat treatment equipment 50 and wire take-up machine 60.
  • the copper wire roller press 20 includes a pair of optical rollers
  • the coupling platform shaping roller press 40 includes a pair of optical rollers
  • the V-shaped groove roller press 30 includes a pattern roller and a light roller
  • a V-shaped groove roller press 30 is formed by rolling a V-shaped groove only on one wide surface of the conductive base tape 1.
  • the V-groove roller press 30 contains a pair of pattern rolls.
  • the preparation method of the conductive base tape 1 of the present embodiment mainly comprises the following steps:
  • the copper wire is rolled by a copper wire roller press 20 to form a flat belt having two wide surfaces;
  • a wide surface roll on the flat belt obtained in step a forms a V-shaped groove, the V-shaped groove has a depth of 0.18 mm; the V-shaped groove has a V-shaped angle of 120 °, The V-shaped groove is at an angle of 30 degrees with respect to the rolling direction of the roller in the V-groove roller press 30; the ratio of the surface area of the V-shaped groove to the area of the wide surface thereof is 77%;
  • the coupling platform is shaped, that is, using a pair of optical rollers in the coupling platform shaping roller press 40 to further roll the semi-finished product of step b, and the platform between adjacent V-grooves in step b occurs.
  • the bulging is leveled to obtain a base belt having a V-shaped groove and a coupling platform distributed on a wide surface, and a parallelogram-shaped coupling platform 4 is left between the adjacent V-shaped grooves, and the height of the coupling platform 4 is
  • the highest point of the V-shaped groove 3 is equal, the diameter of the largest inscribed circle of the coupling platform 4 is 0.25 mm, the V-shaped groove 3 is present on the upper and lower sides of the coupling platform 4, and the V-shaped groove 3 is not present on the left and right sides, that is, the coupling platform 4 left and right sides extend to both sides of the wide surface;
  • V The V-shaped angle of the groove 3 is 120°
  • the V-shaped groove 3 is at an angle of 30 degrees with the longitudinal direction of the
  • step c The base tape obtained in step c is heat-treated by the heat treatment apparatus 50 to obtain a conductive base tape 1.
  • the tin-lead solder was uniformly prepared by electroplating onto the above-mentioned conductive base tape to prepare a heterogeneous high-efficiency photovoltaic ribbon, the thickness d of the solder layer was 10 ⁇ m, and the envelope thickness H of the heterogeneous high-efficiency photovoltaic ribbon was 0.35 mm.
  • the process control is based on the heat treatment process of the conventional flat base tape having the same thickness as the thinnest portion of the base tape.
  • the heat transfer tape tension is less than or equal to the heat treatment tape tension of the reference flat base tape, and the groove can be solved. Deep disconnection risk issues.
  • TU1 oxygen-free copper is selected as the conductive base tape 1, as shown in FIG. 4, having a groove set 2 on one wide surface thereof, and each groove set 2 is composed of a plurality of continuous V-shaped grooves 3, and different groove sets 2
  • the maximum length of the direction is 3.0 mm; the V-shaped groove 3 is present around the coupling platform 4; the V-shaped groove 3 has a V-shaped angle of 75°, and the V-shaped groove 3 is at an angle of 30 degrees with the longitudinal direction of the conductive base tape 1,
  • the parallelogram has two sides parallel to the direction of the V-shaped groove 3; the depth h of the V-shaped groove 3 is 0.18 mm; and the surface area ratio of the surface area of the coupling platform 4 to the wide surface of the conductive base tape 1 is 35%.
  • the tin-lead solder was uniformly prepared by electroplating onto the above-mentioned conductive base tape to prepare a heterogeneous high-efficiency photovoltaic ribbon with a solder layer thickness of 10 ⁇ m.
  • the V-groove depth of the welded strip after welding is 0.144 mm.
  • the power of a set of battery components using this photovoltaic ribbon is 3.6W higher than that of components prepared using conventional solder ribbons, an increase of 1.44%.
  • the welding force of the welding strip is the tensile force required to pull the welding strip along the 45-degree direction of the battery sheet until the strip is peeled off from the battery sheet by a tensile force meter.
  • the welding force requirement is greater than 3N, and the welding strip welding force of the embodiment is greater than 3N. fulfil requirements.
  • the fragmentation rate caused by the thermal expansion and contraction of the ribbon is less than one thousandth.
  • TU1 oxygen-free copper is selected as the conductive base tape 1, as shown in FIG. 5, having a groove set 2 spaced apart along the length direction of the wide surface on one of its wide surfaces, each groove set 2 being composed of a plurality of continuous V-shaped grooves 3, a parallel quadrilateral coupling platform 4 is left between different groove sets 2, the maximum inscribed circle has a diameter of 0.5 mm, and the maximum length along the length of the conductive base tape 1 is 0.5 mm; the height of the coupling platform 4 is The highest point of the V-shaped groove 3 is equal; the V-shaped groove 3 has a V-shaped angle of 120°, the V-shaped groove 3 is at an angle of 15 degrees with the longitudinal direction of the conductive base tape 1; the depth h of the V-shaped groove 3 is 0.17 mm; The surface area ratio of the surface area of the coupling platform 4 to the wide surface of the conductive base tape 1 is 95%.
  • the tin-lead solder was uniformly prepared by electroplating onto the above-mentioned conductive base tape, and the solder layer and the conductive base tape also had a transition layer of 2 ⁇ m to prepare a heterogeneous high-efficiency photovoltaic ribbon having a thickness of 8 ⁇ m.
  • the V-groove depth of the strip is 0.135 mm.
  • the power of a set of battery components using this photovoltaic ribbon was 0.5 W higher than that of a component prepared using a conventional solder ribbon, an increase of 0.2%.
  • the welding force of the welding strip is the tensile force required to pull the welding strip along the 45-degree direction of the battery sheet until the strip is peeled off from the battery sheet by a tensile force meter.
  • the welding force requirement is greater than 3N, and the welding strip welding force of the embodiment is greater than 5N. fulfil requirements.
  • the fragmentation rate caused by the thermal expansion and contraction of the ribbon is less than one thousandth.
  • TU1 oxygen-free copper is selected as the conductive base tape 1, as shown in FIG. 6, having a groove set 2 on one wide surface thereof, and each groove set 2 is composed of a plurality of continuous V-shaped grooves 3, and different groove sets 2
  • a parallelogram-shaped coupling platform 4 the height of the coupling platform 4 is equal to the highest point of the V-shaped groove 3, and the diameter of the largest inscribed circle of the coupling platform 4 is 0.09 mm, coupled to the platform 4
  • the V-shaped groove 3 has a V-shaped angle of 110°, and the V-shaped groove 3
  • the length of the conductive base strip 1 is 75 degrees, and the parallelogram has two sides parallel to the direction of the V-shaped groove 3; the depth h of the V-shaped groove 3 is 0.15 mm; the surface area of
  • the tin-lead solder was uniformly prepared by electroplating onto the above-mentioned conductive base tape to prepare a heterogeneous high-efficiency photovoltaic ribbon with a solder layer thickness of 10 ⁇ m.
  • the V-groove depth of the strip is 0.114 mm.
  • the power of a set of battery components using this photovoltaic ribbon is 4.6W higher than that of components prepared using conventional solder ribbons, an increase of 1.84%.
  • the welding force of the welding strip is the tensile force required to pull the welding strip along the 45-degree direction of the battery sheet until the strip is peeled off from the battery sheet by a tensile force meter.
  • the welding force requirement is greater than 3N, and the welding strip welding force of the embodiment is greater than 4N. fulfil requirements.
  • the fragmentation rate caused by the thermal expansion and contraction of the ribbon is less than one thousandth.
  • TU1 oxygen-free copper is selected as the conductive base tape 1, as shown in FIG. 7, having a groove set 2 along the length direction of the conductive base tape 1 on one wide surface thereof, and two groove sets 2 are respectively disposed on both sides of the wide surface
  • Each groove set 2 consists of a plurality of consecutive V-shaped grooves 3 with a rectangular coupling platform 4 extending along the length of the conductive base strip 1 between the two groove sets 2, said coupling platform 4 is higher than the V shape
  • the diameter of the largest inscribed circle of the coupling platform 4 is 0.6 mm
  • the V-shaped groove 3 has a V-shaped angle of 110°, and the V-shaped grooves 3 are all parallel to the longitudinal direction of the conductive base tape 1
  • the depth h of the groove 3 is 0.16 mm
  • the surface area ratio of the surface area of the coupling platform 4 to the wide surface of the conductive base tape 1 is 10%.
  • the solder layer was uniformly prepared by electroplating onto the above-mentioned conductive base tape to prepare a heterogeneous high-efficiency photovoltaic ribbon, and the thickness of the solder layer 5 was 10 ⁇ m.
  • the V-groove depth of the strip is 0.125 mm.
  • the power of a set of battery components using this photovoltaic ribbon was 4.8W higher than that of a component prepared using a conventional solder ribbon, an increase of 1.92%.
  • the welding force of the welding strip is the tensile force required to pull the welding strip along the 45-degree direction of the battery sheet until the strip is peeled off from the battery sheet by a tensile force meter.
  • the welding force requirement is greater than 3N, and the welding strip welding force of the embodiment is greater than 4N. fulfil requirements.
  • the fragmentation rate caused by the thermal expansion and contraction of the ribbon is less than two thousandths.
  • TU1 oxygen-free copper is selected as the conductive base tape 1, as shown in FIG. 8, having a groove set 2 along the length direction of the conductive base tape 1 on one wide surface thereof, and two groove sets 2 are respectively disposed on both sides of the wide surface
  • Each groove set 2 consists of a plurality of consecutive V-shaped grooves 3 with a rectangular coupling platform 4 extending along the length of the conductive base strip 1 between the two groove sets 2, said coupling platform
  • the height of 4 is equal to the highest point of the V-shaped groove 3, the diameter of the largest inscribed circle of the coupling platform 4 is 0.12 mm, and the maximum length along the length of the conductive base tape 1 is 18 mm; the V-shaped angle of the V-shaped groove 3 110°, the V-shaped grooves 3 are all parallel to the longitudinal direction of the conductive base tape 1; the depth h of the V-shaped grooves 3 is 0.19 mm; the surface area of the coupling platform 4 occupies 50% of the area of the wide surface of the conductive base tape 1 .
  • the solder layer is uniformly prepared by electroplating onto the above-mentioned conductive base tape to prepare a heterogeneous high Photovoltaic ribbon, solder layer thickness of 10 ⁇ m.
  • the V-groove depth of the strip is 0.153 mm.
  • the power of a set of battery components using this photovoltaic ribbon is 2.5 W higher than that of components prepared using conventional solder ribbons, an increase of 1%.
  • the welding force of the welding strip is the tensile force required to pull the welding strip along the 45-degree direction of the battery sheet until the strip is peeled off from the battery sheet by a tensile force meter.
  • the welding force requirement is greater than 3N, and the welding strip welding force of the embodiment is greater than 4N. fulfil requirements.
  • the fragmentation rate caused by the thermal expansion and contraction of the ribbon is less than two thousandths.
  • TU1 oxygen-free copper is selected as the conductive base tape 1, as shown in Fig. 9, having two groove sets 2 on one wide surface thereof, one groove set 2 consisting of a plurality of continuous V-shaped grooves 3, and another concave
  • the groove set 2 is composed of a V-shaped groove 3, and a parallelogram-shaped coupling platform 4 is left between the different groove sets 2, the height of the coupling platform 4 is equal to the highest point of the V-shaped groove 3, and the coupling platform is coupled.
  • the diameter of the largest inscribed circle of 4 is 0.26 mm, and there are V-shaped grooves 3 on the upper and lower sides of the coupling platform 4, and there are no V-shaped grooves 3 on the left and right sides, that is, the left and right sides of the coupling platform 4 extend to both side edges of the wide surface;
  • the V-shaped groove 3 has a V-shaped angle of 110°, the V-shaped groove 3 is at an angle of 30 degrees with respect to the longitudinal direction of the conductive base tape 1, and the parallelogram has two sides parallel to the direction of the V-shaped groove 3; the depth of the V-shaped groove 3 h is 0.25 mm; the surface area ratio of the surface area of the coupling platform 4 to the wide surface of the conductive base tape 1 is 55%.
  • the tin-lead solder was uniformly prepared by electroplating onto the above-mentioned conductive base tape to prepare a heterogeneous high-efficiency photovoltaic ribbon with a solder layer thickness of 10 ⁇ m.
  • the V-groove depth of the welded strip after welding is 0.21 mm.
  • the power of a set of battery components using this photovoltaic ribbon is 3.2W higher than that of components prepared using conventional solder ribbons, an increase of 1.28%.
  • the welding force of the welding strip is the tensile force required to pull the welding strip along the 45-degree direction of the battery sheet until the strip is peeled off from the battery sheet by a tensile force meter.
  • the welding force requirement is greater than 3N, and the welding strip welding force of the embodiment is greater than 4N. fulfil requirements.
  • the fragmentation rate caused by the thermal expansion and contraction of the ribbon is less than one thousandth.
  • TU1 oxygen-free copper is selected as the conductive base tape 1, as shown in FIG. 10, having a V-shaped groove 3 on one wide surface thereof, and a parallelogram-shaped coupling platform 4 is left between the adjacent V-shaped grooves 3, the coupling
  • the height of the platform 4 is equal to the highest point of the V-shaped groove 3, the diameter of the largest inscribed circle of the coupling platform 4 is 0.05 mm, and the maximum length along the length direction of the conductive base tape 1 is 45 mm, and the upper and lower sides of the coupling platform 4 are present.
  • V-shaped groove 3 the left and right sides are also V-shaped grooves 3;
  • the V-shaped groove 3 has a V-shaped angle of 138°, the V-shaped groove 3 is at an angle of 30 degrees with the longitudinal direction of the conductive base belt 1, and the parallelogram has two sides and V The direction of the groove 3 is parallel; the depth h of the V-shaped groove 3 is 0.15 mm.
  • the surface area ratio of the surface area of the coupling platform 4 to the wide surface of the conductive base tape 1 is 5%.
  • the conductive retroreflective layer was uniformly prepared by electroplating onto the above-mentioned conductive base tape, and the thickness of the reflective layer was 1 ⁇ m to prepare a heterogeneous high-efficiency photovoltaic ribbon.
  • solder is adhered to the cell by a conductive adhesive, and the V-groove depth of the solder ribbon is 0.149 mm.
  • the power of a set of battery components using this photovoltaic ribbon is 6W higher than that of components prepared using conventional solder ribbons, an increase of 2.4%.
  • the welding force of the welding strip is the tensile force required to pull the welding strip along the 45-degree direction of the battery sheet until the strip is peeled off from the battery sheet by a tensile force meter.
  • the welding force requirement is greater than 3N, and the welding strip welding force of the embodiment is greater than 3N. fulfil requirements.
  • the fragmentation rate caused by the thermal expansion and contraction of the ribbon is less than two thousandths.
  • TU1 oxygen-free copper is selected as the conductive base tape 1, as shown in FIG. 11, having a groove set 2 on one wide surface thereof, and each groove set 2 is composed of a plurality of continuous V-shaped grooves 3, and different groove sets 2
  • the maximum length is 2.0 mm;
  • the V-shaped groove 3 is present around the coupling platform 4;
  • the V-shaped groove 3 has a V-shaped angle of 75°, and the V-shaped groove 3 and the length of the conductive base tape 1 are inclined at two angles. Both are 75 degree angles; the depth h of the V-shaped groove 3 is 0.15 mm; the surface area ratio of the surface area of the coupling platform 4 to the wide surface of the conductive base tape 1 is 55%.
  • the tin-lead solder was uniformly prepared by electroplating onto the above-mentioned conductive base tape to prepare a heterogeneous high-efficiency photovoltaic ribbon with a solder layer thickness of 10 ⁇ m.
  • the V-groove depth of the strip is 0.112 mm.
  • the power of a set of battery components using this photovoltaic ribbon is 3W higher than that of components prepared using conventional solder ribbons, an increase of 1.2%.
  • the welding force of the welding strip is the tensile force required to pull the welding strip along the 45-degree direction of the battery sheet until the strip is peeled off from the battery sheet by a tensile force meter.
  • the welding force requirement is greater than 3N, and the welding strip welding force of the embodiment is greater than 4N. fulfil requirements.
  • the fragmentation rate caused by the thermal expansion and contraction of the ribbon is less than one thousandth.
  • TU1 oxygen-free copper is selected as the conductive base tape 1, as shown in FIG. 12, having a V-shaped groove 3 on one wide surface thereof, and a coupling platform 4 is left between the adjacent V-shaped grooves 3, and the coupling platform 4 is The height is equal to the highest point of the V-shaped groove 3, the maximum inscribed circle of the coupling platform 4 has a diameter of 0.5 mm, and the maximum length along the length of the conductive base tape 1 is 2.0 mm; the V-shaped portion is present around the coupling platform 4.
  • the groove 3; the V-shaped groove 3 has a V-shaped angle of 100°, and the V-shaped groove 3 has two inclination angles with the longitudinal direction of the conductive base belt 1, one is a 45-degree angle, and the other is a 90-degree angle;
  • the depth h of the groove 3 is 0.16 mm; the surface of the coupling platform 4
  • the area ratio m of the wide surface of the conductive base tape 1 is 82%.
  • the tin-lead solder was uniformly prepared by electroplating onto the above-mentioned conductive base tape to prepare a heterogeneous high-efficiency photovoltaic ribbon with a solder layer thickness of 10 ⁇ m.
  • the V-groove depth of the strip is 0.126 mm.
  • the power of a set of battery components using this photovoltaic ribbon was 1 W higher than that of a component prepared using a conventional solder ribbon, an increase of 0.4%.
  • the welding force of the welding strip is the tensile force required to pull the welding strip along the 45-degree direction of the battery sheet until the strip is peeled off from the battery sheet by a tensile force meter.
  • the welding force requirement is greater than 3N, and the welding strip welding force of the embodiment is greater than 5N. fulfil requirements.
  • the fragmentation rate caused by the thermal expansion and contraction of the ribbon is less than one thousandth.

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Abstract

本发明涉及一种异构高效光伏焊带及导电基带的制备方法和生产线，异构高效光伏焊带包括导电基带，导电基带为金属单质或合金材料，其具有上、下两个宽表面，导电基带至少有一个宽表面分布有V形槽和耦联平台，V形槽的深度h为0.15mm≤h≤0.25mm；耦联平台为最大内接圆的直径不小于0.05mm，沿导电基带长度方向的最大长度小于50mm的平台。本发明通过对V形槽深度的优化设计，在有效解决经过助焊剂浸泡后的异构焊带，因焊接过程中焊料的高流动性导致V形槽结构被过度填充破坏的技术难题的同时，避免了影响焊带的无缝可直焊性，和影响光伏组件的生产效率以及耐候安全。从而在异构焊带的反光复用能力，互联耐候安全，以及无缝高可焊能力之间，达致了优化均衡。

Description

一种异构高效光伏焊带及导电基带的制备方法和生产线 技术领域
本发明属于光伏焊带加工技术领域，特别涉及一种异构高效光伏焊带及导电基带的制备方法和生产线。
背景技术
焊带(包括互连带和汇流带)是光伏组件焊接过程中的重要原材料，焊带通常是通过焊接或导电胶粘结的方式将电池片互相连接和汇流电流，焊带质量的好坏将直接影响到光伏组件电流的收集效率，对光伏组件的功率影响很大。如何通过焊带的异构化，来增加电池片的转化率，降低碎片率，一直是焊带行业研究的课题之一。
中国专利CN101789452A给出了一种涂锡焊带，其包括铜带及其表面的涂锡层，涂锡层表面具有均匀分布的坑状体。这种焊带在一定程度上使太阳光在坑状体中发生漫反射，提高了接受太阳光的能量。但是，其坑状体仅发生漫反射，反射回电池片的太阳光比例很小，提高的转化率有限；此外，其凹坑是在涂锡过程中制备，会产生不均匀的焊料层，并会产生与电池片焊接不牢的现象，出现虚焊。
中国专利CN102569470A给出了一种在焊带表面制备垂直于焊带长度方向的V型槽,以此来降低电池片的隐裂和碎片率。但此专利焊带V型槽是垂直于长度方向且V型槽间无明显的间距，因此这种焊带在与电池片焊接时不稳定，焊接不牢。
中国专利CN202004027U给出了一种焊带，在焊带正面具有多个沿焊带长度方向延伸的凹槽排列构成的截面呈锯齿型的反光结构，以此结构来让入射到焊 带上太阳光有效反射到电池片上，来提高组件功率。但这种焊带在与电池片焊接时不稳定，焊接不牢，且这种沿焊带长度方向的凹槽结构，在同等厚度焊带的情况下，截面积损耗大，从而增加了电阻，不利于功率的提升。
中国专利ZL201320071240.1，ZL201320071182.2，ZL201320110484.6，ZL201320463993.7，ZL201320466223.8等，提出了通过对焊带的导电基带进行不同形式的异构，实现焊带表面反射光的部分复用，调整焊带与电池片之间的焊接牢度，降低焊带带来的汇流电损，以及降低焊带的屈服应力以提高组件的耐候安全和生产过程中的碎片率。实践证实，上述专利群尚存一类共同的不足：即当采用市场上现行的自动串焊机焊接时，除非大幅提高异构宽表面上基带平面的总面积占异构宽表面总面积比例，否则接触背银的异构宽表面与背银之间出现虚焊的风险较高。然而大幅提高异构宽表面上基带平面的总面积占异构宽表面总面积比例的后果，正是导致处于正银面的焊带表面反射光复用能力大幅下降的原因，违背产品设计的主要初衷。
同时，发明人发现，即使在焊带的生产过程中将凹槽角度设置在能够使反射光通过组件的玻璃/空气表面重新反射到电池表面发生全反射的角度范围内，反光复用的能力仍不理想。
在针对手工焊接，以及焊带经过助焊剂浸泡后的串焊机焊接时，由于助焊剂的作用，使焊料的流动性非常好，导致在焊接中由于焊料流动对V形槽结构破坏严重，影响利用V形槽反光复用来增加组件功率的效果。但V形槽过深，又会带来很多现有光伏组件生产环境下难以克服的其他问题，其中最重要的，是在现有的组件制备工艺中，EVA的厚度已经很薄，焊带包络厚度过大会增高组件的耐候安全风险，以及组件层压过程中的电池碎片风险。此外实用中还发现，如果焊带的包络厚度过大，还会导致焊带在焊接时易于出现虚焊和漏焊。中国 专利201410236303.3因此提出V形槽深度应在0.055mm到0.15mm之间，其认为当V形槽深度超过0.15mm时，就会带来焊带的包络厚度过大，并且在基带制备过程中断线风险高等弊端。
发明内容
本发明要解决的技术问题是：解决带V形槽焊带在手工焊接，和焊带经过助焊剂浸泡后的串焊机焊接时，因为焊料的高流动性，导致对V形槽结构被过度破坏的问题，同时避免过厚包络对组件的生产效率以及耐候安全带来影响，一并降低异构焊带在焊接时出现虚焊和漏焊的风险。本发明提供一种异构高效光伏焊带及导电基带的制备方法和生产线。
本发明解决其技术问题所采用的技术方案是：一种异构高效光伏焊带，包括导电基带，所述导电基带为金属单质或合金材料，其具有上、下两个宽表面，所述的导电基带至少有一个宽表面分布有V形槽和耦联平台，V形槽的深度h为h为0.15mm≤h≤0.25mm；所述耦联平台为最大内接圆的直径大于0.05mm，沿导电基带长度方向的最大长度小于50mm的平台。
上述技术方案通过在导电基带的表面制作V形槽，一方面使得部分表面反射光能够通过组件的玻璃/空气表面重新反射到电池表面，从而实现了部分焊带表面反射光的复用的能力，同时通过V形槽的分布局部降低了焊带的实际厚度，从而降低了焊接后因为焊带的远高于电池片的热胀冷缩幅度而带来的焊带与电池片之间的应力。尤其重要的是，本方案同时在V形槽之间预留有耦联平台，从而同步解决了焊带与电池片的结合牢度问题。发明人发现，使用当前市场上的主流自动串焊机时，欲保证焊接过程中焊料对电池的背银表面有足够的焊接牢度，耦联平台的最大内接圆的直径须不小于0.05mm。与此同时，一般应选择 耦联平台沿导电基带长度方向的最大长度小于50mm，否则不仅无谓损失V型槽密度/焊带反光复用的能力，通过V型槽降低焊接碎片率的效果也会大打折扣：因为此时V型槽之间距离已经大于一般多晶电池片宽度的30％，相邻V型槽之间在焊接过程中积累的焊带/电池片应力难以得到较好释放。
发明人发现，在现有焊带焊接工艺条件下，焊接后焊带表面的焊锡层会发生自然流淌，因此V形槽侧壁和耦联平台上的部分焊料会流入V形槽内，特别是焊带经过助焊剂的浸泡后，当V形槽深度不够时，V形槽结构破坏更加严重，导致其反光复用能力大打折扣，但如果V形槽过深，则会造成焊带的包络厚度过厚，在现有组件工艺条件下易导致层压过程中碎片率升高，以及增加组件在耐候安全方面的风险。
在现有主流光伏组件生产环境下，当选取异构焊带的基带的V形槽的深度h在0.15mm≤h≤0.25mm时，既可有效解决经过助焊剂浸泡后的异构焊带，因焊接过程中焊料的高流动性导致V形槽结构被过度填充破坏的技术难题，又可避免影响焊带的无缝可直焊性，和影响光伏组件的生产效率以及耐候安全。从而在异构焊带的反光复用能力，互联耐候安全，以及无缝高可焊能力之间，达致优化均衡。例如以焊料层厚度10μm，耦联平台为平行四边形，耦联平台内接圆的直径为250μm，V形槽夹角120度为参数模拟计算焊接后，不同深度V形槽被高流动性焊料填埋后的剩余深度比例，结果如下：
导电基带V形槽深度(mm) 焊接后焊带V形槽深度(mm) V形槽反光比例
0.050 0.021 42％
0.070 0.039 55.7％
0.090 0.056 62.2％
0.100 0.065 65％
0.120 0.084 70％
0.150 0.112 74.7％
0.180 0.142 78.89％
0.20 0.162 81％
由上表可以看出，当V形槽深度不小于0.15mm时，V形槽由于焊料流淌填充的深度占V形槽总深度的比小于25％。由此可较有效地解决V形槽结构被过分破坏，导致过分失去反光复用能力的问题。通过在异构焊带的基带制备工艺中增加耦联平台定形工序，可以解决过往观察到的V形槽过深时，易于导致在焊接过程中虚焊和漏焊风险增高的问题。上述槽深范围不会带来焊接过程中虚焊和漏焊风险增高；
同时，在此槽深范围内，必要时结合调整耦联平台定形工序中的轧制间距，可以控制异构焊带的包络厚度小于0.38mm。考虑到现有主流光伏组件层压工艺中，EVA的厚度在0.45mm-0.8mm之间，且具备V形槽的焊带可以允许在层压过程中交联发生前的液态EVA自由在焊带两侧流动，异构焊带的包络厚度在0.38mm以下时，对于层压过程中的电池碎片率，以及封装后的组件耐候安全的影响可以忽略。
所述的导电基带至少有一个宽表面由所述V形槽和所述耦联平台构成，即同一个宽表面仅由所述的V形槽和所述的耦联平台构成。
所述V形槽为槽的两个斜边的交线为直线的直线型V形槽。
相邻V形槽之间均留有耦联平台。
在当前晶硅电池组件焊接和封装环境下，优选V形槽的深度h在0.16mm≤h≤0.2m。
进一步地，宜优选所述耦联平台的最大内接圆的直径大于0.1mm，且所述耦联平台沿导电基带长度方向的最大长度小于20mm。
进一步地，宜优选所述耦联平台的最大内接圆的直径不小于0.15mm，且所述耦联平台沿导电基带长度方向的最大长度小于5mm。在当前市场上的主流自动串焊机环境下，并从工业化稳定生产高可焊焊带的成本效益出发，在保证焊带 可焊接或粘结并满足焊带剥离拉力的情况下，可以得到较佳的耦联平台与反光V形槽的比例。
优选直线型V形槽与导电基带的长度方向的倾斜角度为15°-75°。当夹角在75°-90°之间时，V形槽的反光通过玻璃/空气表面重新反射后会大部或者全部落回到焊带表面，起不到被电池片复用的作用，且焊带的有效导电横截面积降低较大，导致焊带的实用电阻增大，带来较高的封装电损。但此时的V形槽走向有利于焊带焊接后的内应力释放，从而能够更好地降低因为焊带的热胀冷缩导致的焊接碎片风险；当夹角在0°-15°之间时，V形槽的反光通过玻璃/空气表面重新反射后会大部或者全部落回到电池片表面，有利于光的复用，且焊带的有效横截面积降低小/封装电损增加小，但此时不利于释放焊带焊接后的内应力，在辅助降低焊接过程中因为焊带远高于电池片的热胀冷缩系数而导致焊接碎片风险方面有一定劣势。
所述耦联平台的表面积占其所在导电基带宽表面的面积比例m为5％≤m≤95％。
所述耦联平台的表面积占其所在导电基带宽表面的面积比例m为10％≤m≤35％。
所述直线型V形槽在同一宽面平行分布。
所述直线型V形槽在同一宽面交叉分布。
所述耦联平台的形状为平行四边形或梯形。
焊带焊接后，表面的焊锡层会发生自然流淌，使得焊接完成后的实际发光凹槽角度变大。对于采用非焊接方式(典型地如通过导电胶粘结电池与互联带)，上述问题则不会发生。根据具体应用方法，一般选择V形槽的V形夹角在75°-138°之间，以保障较佳的焊带表面反光通过玻璃/空气表面重新反射到电池表 面的效率。
所述耦联平台不低于所述V形槽的最高点。
焊带的外表面具有锡基焊料层，从而可以直接焊接；且在导电基带与锡基焊料层之间可制备保护层，以防止焊带老化，性能可靠。上述基带制作方案，对于采用常规热涂敷焊料制备焊带的方式，同样具备重要意义：采用常规热涂焊料生产焊带时，虽然基带表面的异构会被基本填平，从而难以实现焊带表面的反光复用，但采用本方案的V形槽基带，仍可降低焊接应力，同时又不会因为V形槽的存在而过多损失有效导电截面积。
焊带的外表面也可具有导电反光层，适用于焊带与电池片之间通过非焊接(如导电胶粘结)方式结合的情况。
所述焊料层或导电反光层与导电基带之间还制备有过渡层。
一种光伏焊带的导电基带的制备方法，主要包括以下步骤：
a.将铜线经过辊压形成具有两个宽表面的平带；
b.在步骤a得到的平带上的至少一个宽表面辊压形成V形槽，V形槽的深度大于0.15mm；
c.耦联平台定形：使用一对光辊对步骤b的半成品作进一步的轧制，得到在至少一个宽表面分布有V形槽和耦联平台的基带，此时V形槽的深度h为0.15mm≤h≤0.25mm；所述耦联平台为最大内接圆的直径不小于0.05mm，沿基带长度方向的最大长度小于50mm的平台。
步骤b的辊压V形槽，由于槽深大于0.15mm，易导致两相邻的V形槽之间发生过度挤压，引发预留的焊接平台产生鼓起；本发明增加了耦联平台定形工序，将步骤b中产生的鼓起定形为具备高一致性的耦联平台，从而解决了此前的异构焊带在焊接应用过程中易出现虚焊、漏焊的问题。
对导电基带进行热处理时，工艺控制以对厚度与基带最薄处相同的常规平基带的热处理工艺为参照，热处理时的走带张力小于或等于对于参考平基带的热处理走带张力，可以解决槽深断线风险问题。
一种光伏焊带的导电基带的制备方法采用的制备生产线，至少依次包括以下设备：铜线辊压机，V形槽辊压机和耦联平台定形辊压机。
所述铜线辊压机含有一对光辊；V形槽辊压机含有一个花纹辊和一个光辊，或者一对花纹辊；耦联平台定形辊压机含有一对光辊。
本发明公布的一种异构高效光伏焊带，通过在导电基带表面制备优选深度的V形槽，和优选设计的耦联平台，为同时实现焊带表面的部分反光复用、降低焊接应力、保障焊接强度、均衡开槽导致的汇流电损提供了高性价比的定制设计方案，并通过V形槽深度的设计和导电基带制备工艺的改进，在不影响焊带的可直接焊接性和电池片的互联耐候安全，以及同步解决实际应用中的虚焊漏焊风险的前提下，焊接后V形槽结构受流入槽内的焊料的影响较小，从而长足提高了在实际应用中的反光复用效率。对于忽略反光复用能力的常规热涂焊带的制备，以及忽略可直接焊接性的粘贴型反光焊带的设计，同样具备优化指导意义。
附图说明
图1是本发明的异构高效光伏焊带的实施例1的结构示意图。
图2是图1的A-A剖面示意图。
图3是实施例1的焊带焊接后的金相结构图。
图4是本发明的异构高效光伏焊带的实施例2中导电基带的结构示意图。
图5是本发明的异构高效光伏焊带的实施例3中导电基带的结构示意图。
图6是本发明的异构高效光伏焊带的实施例4中导电基带的结构示意图。
图7是本发明的异构高效光伏焊带的实施例5中导电基带的结构示意图。
图8是本发明的异构高效光伏焊带的实施例6中导电基带的结构示意图。
图9是本发明的异构高效光伏焊带的实施例7中导电基带的结构示意图。
图10是本发明的异构高效光伏焊带的实施例8中导电基带的结构示意图。
图11是本发明的异构高效光伏焊带的实施例9中导电基带的结构示意图。
图12是本发明的异构高效光伏焊带的实施例10中导电基带的结构示意图。
图13是本发明的导电基带的制备生产线的示意图。
图中1、导电基带，2、凹槽集合，3、V形槽，4、耦联平台，5、焊料层，10、放线机，20、铜线辊压机，30、V形槽辊压机，40、耦联平台定形辊压机，50、热处理设备，60、收线机。
具体实施方式
本发明选择V形槽的深度h不小于0.15mm，首先是因为在现有焊带焊接工艺条件下，焊接后焊带表面的焊锡层会发生自然流淌，因此V形槽侧壁和耦联平台上的部分焊料会流入V形槽内，如果V形槽深度太浅，会造成V形槽大部分被焊料堵死，损失反光设计的初衷。例如以焊料层厚度是10μm，耦联平台为平行四边形，耦联平台内接圆的直径为250μm，V形槽夹角120度，此时模拟计算焊接后，不同深度V形槽焊料填埋后计算剩余深度比例如下表：
Figure PCTCN2014093136-appb-000001
Figure PCTCN2014093136-appb-000002
由上表可以看出，当V形槽深度不小于0.15mm时，V形槽由于焊料流淌填充的深度占V形槽总深度的比小于25％。由此可较有效地解决V形槽结构被过分破坏，导致过分失去反光复用能力的问题。但从其他方面看，V形槽过深，会带来加工后的基材包络厚度过大，存在焊带的焊接问题和组件的耐候安全问题。实用中一般会选择直线型V形槽的深度h不大于0.25mm。
实施例1
选用TU1无氧铜作为导电基带1，如图1、图2所示，在其一个宽表面具有V形槽3，相邻V形槽3之间均留有平行四边形的耦联平台4，所述耦联平台4的高度与V形槽3的最高点等高，耦联平台4的最大内接圆的直径为0.25mm，耦联平台4的上下都存在V形槽3，左右两边没有V形槽3，即耦联平台4左右两边均延伸到宽表面的两侧边缘；V形槽3的V形夹角为120°，V形槽3与导电基带1的长度方向成30度角，平行四边形有两条边与V形槽3的方向平行；V形槽3的深度h是0.17mm；耦联平台4的表面积占其所在导电基带1宽表面的面积比例m为25％。所述异构高效光伏焊带的包络厚度H为0.35mm。
通过电镀的方式将锡铅焊料均匀的制备到上述的导电基带上，制备成异构高效光伏焊带，焊料层厚度d为10μm。
焊接后焊带V形槽深度为0.135mm。如图3所示，是本实施例的焊带焊接后的金相结构图，图中的V形槽仅一小部分被流淌到槽底的焊料填充。
采用60片156*156多晶硅片，使用此光伏焊带制备一组电池组件的功率比使用普通焊带制备的组件功率高出4W，提高了1.6％。
焊带的焊接力是通过拉力计，沿着电池片45度方向拉焊带直至焊带从电池 片剥离所需的拉力，一般焊接力要求大于3N，本实施例的焊带焊接力大于4N，满足要求。
由焊带热胀冷缩而导致的碎片率低于千分之一。
本实施例的导电基带1的制备生产线，如图13所示，依次包括以下设备：放线机10，铜线辊压机20，V形槽辊压机30，耦联平台定形辊压机40，热处理设备50和收线机60。
所述铜线辊压机20含有一对光辊，耦联平台定形辊压机40含有一对光辊，V形槽辊压机30含有一个花纹辊和一个光辊，V形槽辊压机30仅在导电基带1的一个宽表面都辊压形成V形槽。当需要在导电基带1的两个宽表面都辊压形成V形槽时，V形槽辊压机30含有一对花纹辊。
采用上述的制备生产线，本实施例的导电基带1的制备方法，主要包括以下步骤：
a.将铜线经过铜线辊压机20辊压形成具有两个宽表面的平带；
b.经过V形槽辊压机30，在步骤a得到的平带上的一个宽表面辊压形成V形槽，V形槽的深度0.18mm；V形槽的V形夹角为120°，V形槽与V形槽辊压机30中辊的滚动方向成30度角；V形槽的表面积占其所在宽表面的面积比例为77％；
c.耦联平台定形，也即使用耦联平台定形辊压机40中的一对光辊对步骤b的半成品作进一步的轧制，将步骤b中相邻的V形槽之间的平台发生的鼓起整平，得到在一个宽表面分布有V形槽和耦联平台的基带，相邻V形槽之间均留有平行四边形的耦联平台4，所述耦联平台4的高度与V形槽3的最高点等高，耦联平台4的最大内接圆的直径为0.25mm，耦联平台4的上下都存在V形槽3，左右两边没有V形槽3，即耦联平台4左右两边均延伸到宽表面的两侧边缘；V 形槽3的V形夹角为120°，V形槽3与导电基带1的长度方向成30度角，平行四边形有两条边与V形槽3的方向平行，V形槽槽深h为0.17mm，耦联平台4的表面积占其所在导电基带1宽表面的面积比例m为25％；并且，在步骤c中控制耦联平台定形工艺的轧制间距，可以得到基带的包络厚度为0.33mm；
d.由步骤c得到的基带经过热处理设备50热处理后得到导电基带1。
通过电镀的方式将锡铅焊料均匀的制备到上述的导电基带上，制备成异构高效光伏焊带，焊料层厚度d为10μm，得到异构高效光伏焊带的包络厚度H为0.35mm。
对导电基带进行热处理时，工艺控制以对厚度与基带最薄处相同的常规平基带的热处理工艺为参照，热处理时的走带张力小于或等于对于参考平基带的热处理走带张力，可以解决槽深断线风险问题。
实施例2
选用TU1无氧铜作为导电基带1，如图4所示，在其一个宽表面具有凹槽集合2，每个凹槽集合2由多个连续的V形槽3组成，不同凹槽集合2之间留有平行四边形的耦联平台4，所述耦联平台4的高度与V形槽3的最高点等高，耦联平台4的最大内接圆的直径为0.15mm，沿导电基带1长度方向的最大长度为3.0mm；耦联平台4的周围都存在V形槽3；V形槽3的V形夹角为75°，V形槽3与导电基带1的长度方向成30度角，平行四边形有两条边与V形槽3的方向平行；V形槽3的深度h是0.18mm；耦联平台4的表面积占其所在导电基带1宽表面的面积比例m为35％。
通过电镀的方式将锡铅焊料均匀的制备到上述的导电基带上，制备成异构高效光伏焊带，焊料层厚度为10μm。
焊接后焊带V形槽深度为0.144mm。
采用60片156*156多晶硅片，使用此光伏焊带制备一组电池组件的功率比使用普通焊带制备的组件功率高出3.6W，提高了1.44％。
焊带的焊接力是通过拉力计，沿着电池片45度方向拉焊带直至焊带从电池片剥离所需的拉力，一般焊接力要求大于3N，本实施例的焊带焊接力大于3N，满足要求。
由焊带热胀冷缩而导致的碎片率低于千分之一。
实施例3
选用TU1无氧铜作为导电基带1，如图5所示，在其一个宽表面具有沿宽表面的长度方向间隔设置的凹槽集合2，每个凹槽集合2由多个连续的V形槽3组成，不同凹槽集合2之间留有平行四边形的耦联平台4，最大内接圆的直径为0.5mm，沿导电基带1长度方向的最大长度为0.5mm；耦联平台4的高度与V形槽3的最高点等高；V形槽3的V形夹角为120°，V形槽3与导电基带1的长度方向成15度角；V形槽3的深度h是0.17mm；耦联平台4的表面积占其所在导电基带1宽表面的面积比例m为95％。
通过电镀的方式将锡铅焊料均匀的制备到上述的导电基带上，焊料层与导电基带还有2μm的过渡层，制备成异构高效光伏焊带，焊料层的厚度为8μm。
焊接后焊带V形槽深度为0.135mm。
采用60片156*156多晶硅片，使用此光伏焊带制备一组电池组件的功率比使用普通焊带制备的组件功率高出0.5W，提高了0.2％。
焊带的焊接力是通过拉力计，沿着电池片45度方向拉焊带直至焊带从电池片剥离所需的拉力，一般焊接力要求大于3N，本实施例的焊带焊接力大于5N，满足要求。
由焊带热胀冷缩而导致的碎片率低于千分之一。
实施例4
选用TU1无氧铜作为导电基带1，如图6所示，在其一个宽表面具有凹槽集合2，每个凹槽集合2由多个连续的V形槽3组成，不同凹槽集合2之间留有平行四边形的耦联平台4，所述耦联平台4的高度与V形槽3的最高点等高，耦联平台4的最大内接圆的直径为0.09mm，耦联平台4的上下都存在V形槽3，左右两边没有V形槽3，即耦联平台4左右两边均延伸到宽表面的两侧边缘；V形槽3的V形夹角为110°，V形槽3与导电基带1的长度方向成75度角，平行四边形有两条边与V形槽3的方向平行；V形槽3的深度h是0.15mm；耦联平台4的表面积占其所在导电基带1宽表面的面积比例m为20％。
通过电镀的方式将锡铅焊料均匀的制备到上述的导电基带上，制备成异构高效光伏焊带，焊料层厚度为10μm。
焊接后焊带V形槽深度为0.114mm。
采用60片156*156多晶硅片，使用此光伏焊带制备一组电池组件的功率比使用普通焊带制备的组件功率高出4.6W，提高了1.84％。
焊带的焊接力是通过拉力计，沿着电池片45度方向拉焊带直至焊带从电池片剥离所需的拉力，一般焊接力要求大于3N，本实施例的焊带焊接力大于4N，满足要求。
由焊带热胀冷缩而导致的碎片率低于千分之一。
实施例5
选用TU1无氧铜作为导电基带1，如图7所示，在其一个宽表面具有两个沿导电基带1长度方向的凹槽集合2，两个凹槽集合2分别设置在宽表面的两侧，每个凹槽集合2由多个连续的V形槽3组成，所述两个凹槽集合2之间留有沿导电基带1长度方向延伸的矩形的耦联平台4，所述耦联平台4的高度高于V形 槽3的最高点，耦联平台4的最大内接圆的直径为0.6mm；V形槽3的V形夹角为110°，V形槽3均与导电基带1的长度方向平行；V形槽3的深度h是0.16mm；耦联平台4的表面积占其所在导电基带1宽表面的面积比例m为10％。
通过电镀的方式将焊料层均匀的制备到上述的导电基带上，制备成异构高效光伏焊带，焊料层5的厚度为10μm。
焊接后焊带V形槽深度为0.125mm。
采用60片156*156多晶硅片，使用此光伏焊带制备一组电池组件的功率比使用普通焊带制备的组件功率高出4.8W，提高了1.92％。
焊带的焊接力是通过拉力计，沿着电池片45度方向拉焊带直至焊带从电池片剥离所需的拉力，一般焊接力要求大于3N，本实施例的焊带焊接力大于4N，满足要求。
由焊带热胀冷缩而导致的碎片率低于千分之二。
实施例6
选用TU1无氧铜作为导电基带1，如图8所示，在其一个宽表面具有两个沿导电基带1长度方向的凹槽集合2，两个凹槽集合2分别设置在宽表面的两侧，每个凹槽集合2由多个连续的V形槽3组成，所述两个凹槽集合2之间留有沿导电基带1长度方向延伸的矩形的耦联平台4，所述耦联平台4的高度与V形槽3的最高点等高，耦联平台4的最大内接圆的直径为0.12mm，沿导电基带1长度方向的最大长度为18mm；V形槽3的V形夹角为110°，V形槽3均与导电基带1的长度方向平行；V形槽3的深度h是0.19mm；耦联平台4的表面积占其所在导电基带1宽表面的面积比例m为50％。
在同一宽表面上，还具有开口为圆形凹槽8，所述凹槽8底面为圆弧形。
通过电镀的方式将焊料层均匀的制备到上述的导电基带上，制备成异构高 效光伏焊带，焊料层厚度为10μm。
焊接后焊带V形槽深度为0.153mm。
采用60片156*156多晶硅片，使用此光伏焊带制备一组电池组件的功率比使用普通焊带制备的组件功率高出2.5W，提高了1％。
焊带的焊接力是通过拉力计，沿着电池片45度方向拉焊带直至焊带从电池片剥离所需的拉力，一般焊接力要求大于3N，本实施例的焊带焊接力大于4N，满足要求。
由焊带热胀冷缩而导致的碎片率低于千分之二。
实施例7
选用TU1无氧铜作为导电基带1，如图9所示，在其一个宽表面具有两种凹槽集合2，一种凹槽集合2由多个连续的V形槽3组成，另一种凹槽集合2由一个V形槽3组成，不同凹槽集合2之间留有平行四边形的耦联平台4，所述耦联平台4的高度与V形槽3的最高点等高，耦联平台4的最大内接圆的直径为0.26mm，耦联平台4的上下都存在V形槽3，左右两边没有V形槽3，即耦联平台4左右两边均延伸到宽表面的两侧边缘；V形槽3的V形夹角为110°，V形槽3与导电基带1的长度方向成30度角，平行四边形有两条边与V形槽3的方向平行；V形槽3的深度h是0.25mm；耦联平台4的表面积占其所在导电基带1宽表面的面积比例m为55％。
通过电镀的方式将锡铅焊料均匀的制备到上述的导电基带上，制备成异构高效光伏焊带，焊料层厚度为10μm。
焊接后焊带V形槽深度为0.21mm。
采用60片156*156多晶硅片，使用此光伏焊带制备一组电池组件的功率比使用普通焊带制备的组件功率高出3.2W，提高了1.28％。
焊带的焊接力是通过拉力计，沿着电池片45度方向拉焊带直至焊带从电池片剥离所需的拉力，一般焊接力要求大于3N，本实施例的焊带焊接力大于4N，满足要求。
由焊带热胀冷缩而导致的碎片率低于千分之一。
实施例8
选用TU1无氧铜作为导电基带1，如图10所示，在其一个宽表面具有V形槽3，相邻V形槽3之间均留有平行四边形的耦联平台4，所述耦联平台4的高度与V形槽3的最高点等高，耦联平台4的最大内接圆的直径为0.05mm，沿导电基带1长度方向的最大长度为45mm，耦联平台4的上下都存在V形槽3，左右两边也V形槽3；V形槽3的V形夹角为138°，V形槽3与导电基带1的长度方向成30度角，平行四边形有两条边与V形槽3的方向平行；V形槽3的深度h是0.15mm。耦联平台4的表面积占其所在导电基带1宽表面的面积比例m为5％。
通过电镀方式将导电反光层均匀的制备到上述的导电基带上，反光层厚度为1μm，制备成异构高效光伏焊带。
焊接通过导电胶粘帖电池片上，焊带V形槽深度0.149mm。
采用60片156*156多晶硅片，使用此光伏焊带制备一组电池组件的功率比使用普通焊带制备的组件功率高出6W，提高了2.4％。
焊带的焊接力是通过拉力计，沿着电池片45度方向拉焊带直至焊带从电池片剥离所需的拉力，一般焊接力要求大于3N，本实施例的焊带焊接力大于3N，满足要求。
由焊带热胀冷缩而导致的碎片率低于千分之二。
实施例9
选用TU1无氧铜作为导电基带1，如图11所示，在其一个宽表面具有凹槽集合2，每个凹槽集合2由多个连续的V形槽3组成，不同凹槽集合2之间留有梯形的耦联平台4，所述耦联平台4的高度与V形槽3的最高点等高，耦联平台4的最大内接圆的直径为0.5mm，沿导电基带1长度方向的最大长度为2.0mm；耦联平台4的周围都存在V形槽3；V形槽3的V形夹角为75°，V形槽3与导电基带1的长度方向成两种倾斜角度，均为75度角；V形槽3的深度h是0.15mm；耦联平台4的表面积占其所在导电基带1宽表面的面积比例m为55％。
通过电镀的方式将锡铅焊料均匀的制备到上述的导电基带上，制备成异构高效光伏焊带，焊料层厚度为10μm。
焊接后焊带V形槽深度为0.112mm。
采用60片156*156多晶硅片，使用此光伏焊带制备一组电池组件的功率比使用普通焊带制备的组件功率高出3W，提高了1.2％。
焊带的焊接力是通过拉力计，沿着电池片45度方向拉焊带直至焊带从电池片剥离所需的拉力，一般焊接力要求大于3N，本实施例的焊带焊接力大于4N，满足要求。
由焊带热胀冷缩而导致的碎片率低于千分之一。
实施例10
选用TU1无氧铜作为导电基带1，如图12所示，在其一个宽表面具有V形槽3，相邻的V形槽3之间留有耦联平台4，所述耦联平台4的高度与V形槽3的最高点等高，耦联平台4的最大内接圆的直径为0.5mm，沿导电基带1长度方向的最大长度为2.0mm；耦联平台4的周围都存在V形槽3；V形槽3的V形夹角为100°，V形槽3与导电基带1的长度方向成两种倾斜角度，一种为45度角，另一种为90度角；V形槽3的深度h是0.16mm；耦联平台4的表面 积占其所在导电基带1宽表面的面积比例m为82％。
通过电镀的方式将锡铅焊料均匀的制备到上述的导电基带上，制备成异构高效光伏焊带，焊料层厚度为10μm。
焊接后焊带V形槽深度为0.126mm。
采用60片156*156多晶硅片，使用此光伏焊带制备一组电池组件的功率比使用普通焊带制备的组件功率高出1W，提高了0.4％。
焊带的焊接力是通过拉力计，沿着电池片45度方向拉焊带直至焊带从电池片剥离所需的拉力，一般焊接力要求大于3N，本实施例的焊带焊接力大于5N，满足要求。
由焊带热胀冷缩而导致的碎片率低于千分之一。

Claims (22)

  1. 一种异构高效光伏焊带，其特征在于：包括导电基带(1)，所述导电基带(1)为金属单质或合金材料，其具有上、下两个宽表面，所述的导电基带(1)至少有一个宽表面分布有V形槽(3)和耦联平台(4)，V形槽(3)的深度h为0.15mm≤h≤0.25mm；所述耦联平台(4)为最大内接圆的直径不小于0.05mm，沿导电基带(1)长度方向的最大长度小于50mm的平台。
  2. 如权利要求1所述的异构高效光伏焊带，其特征在于：所述异构高效光伏焊带的包络厚度H小于0.38mm。
  3. 如权利要求1所述的异构高效光伏焊带，其特征在于：所述的导电基带(1)至少有一个宽表面由所述V形槽(3)和所述耦联平台(4)构成。
  4. 如权利要求1所述的异构高效光伏焊带，其特征在于：所述V形槽(3)为槽的两个斜边的交线为直线的直线型V形槽。
  5. 如权利要求1所述的异构高效光伏焊带，其特征在于：相邻V形槽之间均留有耦联平台(4)。
  6. 如权利要求1-5中任一项所述的异构高效光伏焊带，其特征在于：所述V形槽(3)的深度h为0.16mm≤h≤0.20mm。
  7. 如权利要求1-6中任一项所述的异构高效光伏焊带，其特征在于：所述耦联平台(4)的最大内接圆的直径大于0.1mm，且所述耦联平台(4)沿导电基带(1)长度方向的最大长度小于20mm。
  8. 如权利要求6或7所述的异构高效光伏焊带，其特征在于：所述耦联平台(4)的最大内接圆的直径不小于0.15mm，且所述耦联平台(4)沿导电基带(1)长度方向的最大长度小于5mm。
  9. 如权利要求4所述的异构高效光伏焊带，其特征在于：所述直线型V形槽(3)与导电基带(1)的长度方向的倾斜角度为15°-75°。
  10. 如权利要求1-9中任一项所述的异构高效光伏焊带，其特征在于：所述耦联平台(4)的表面积占其所在导电基带(1)宽表面的面积比例m为5％≤m≤95％。
  11. 如权利要求10所述的异构高效光伏焊带，其特征在于：所述耦联平台(4)的表面积占其所在导电基带(1)宽表面的面积比例m为10％≤m≤35％。
  12. 如权利要求4所述的异构高效光伏焊带，其特征在于：所述直线型V形槽(3)在同一宽面平行分布。
  13. 如权利要求4所述的异构高效光伏焊带，其特征在于：所述直线型V形槽(3)在同一宽面交叉分布。
  14. 如权利要求1所述的异构高效光伏焊带，其特征在于：所述耦联平台(4)的形状为平行四边形或梯形。
  15. 如权利要求1-4中任一项所述的异构高效光伏焊带，其特征在于：所述V形槽(3)的V形夹角在75°-138°之间。
  16. 如权利要求1-5中任一项所述的异构高效光伏焊带，其特征在于：所述耦联平台(4)不低于所述V形槽(4)的最高点。
  17. 如权利要求1所述的异构高效光伏焊带，其特征在于：所述导电基带(1)的表面具有焊料层(5)。
  18. 如权利要求1所述的异构高效光伏焊带，其特征在于：所述导电基带(1)的表面具有导电反光层。
  19. 如权利要求17或18所述的异构高效光伏焊带，其特征在于：所述焊料层(5)或导电反光层与导电基带(1)之间还制备有过渡层。
  20. 一种光伏焊带的导电基带的制备方法，其特征在于，主要包括以下步骤：
    a.将铜线经过辊压形成具有两个宽表面的平带；
    b.在步骤a得到的平带上的至少一个宽表面辊压形成V形槽，V形槽的深度大于0.15mm；
    c.耦联平台定形：使用一对光辊对步骤b的半成品作进一步的轧制，得到在至少一个宽表面分布有V形槽和耦联平台的基带，此时V形槽的深度h为0.15mm≤h≤0.25mm；所述耦联平台为最大内接圆的直径不小于0.05mm，沿基带长度方向的最大长度小于50mm的平台。
  21. 如权利要求20所述的一种光伏焊带的导电基带的制备方法采用的制备生产线，其特征在于，至少依次包括以下设备：铜线辊压机(20)，V形槽辊压机(30)和耦联平台定形辊压机(40)。
  22. 如权利要求21所述的制备生产线，其特征在于，所述铜线辊压机(20)含有一对光辊；V形槽辊压机(30)含有一个花纹辊和一个光辊，或者一对花纹辊；耦联平台定形辊压机(40)含有一对光辊。
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