CN109244169B - 一种复合光伏焊带 - Google Patents

一种复合光伏焊带 Download PDF

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CN109244169B
CN109244169B CN201810898440.1A CN201810898440A CN109244169B CN 109244169 B CN109244169 B CN 109244169B CN 201810898440 A CN201810898440 A CN 201810898440A CN 109244169 B CN109244169 B CN 109244169B
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陈存宏
郑瑞宏
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Silk Road Sunshine Xiamen New Energy Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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    • H01L31/05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/052Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract

本发明公开了一种复合光伏焊带,包括铜制基带和折叠部分,所述铜制基带在中间位置设置有折叠部分,所述铜制基带上顶面焊接有第一导热带,且第一导热带上顶面焊接有焊接块,所述焊接块底面设有第二导热带,且第二导热带顶面焊接有反射块,所述反射块表面开设有反射槽。本发明中,设置有折叠部分,折叠部分使铜制基带呈现M型,由于光伏电板容易受到热障冷缩影响,传统的光伏焊带不能进行收缩,光伏电板容易产生拉伸破裂,而本装置设置的折叠部分会在光伏电板变形时跟着光伏电板进行伸长,增加本装置的形变量,使光伏电板变形时不受光伏焊带影响而碎裂,保护了光伏电板的完整性。

Description

一种复合光伏焊带
技术领域
本发明涉及光伏焊带技术领域,尤其涉及一种复合光伏焊带。
背景技术
光伏焊带又称镀锡铜带或涂锡铜带,分汇流带和互连条,应用于光伏组件电池片之间的连接,发挥导电聚电的重要作用。
传统的光伏焊带大部分是由镀锡铜带组成,结构多为长条状,传统的光伏焊带融化过后温度过高,在焊接时光伏电板快速受热容易破碎,焊接好以后光伏电板容易热障冷缩,传统的光伏焊带不具备缓冲作用,光伏电板容易在热障冷缩时受到限制而损坏,同时光伏焊带自身不具备反发射作用,照射在光伏焊带表面的光能被浪费,针对以上问题,特提出一种复合光伏焊带来解决上述问题。
发明内容
本发明的目的是为了解决现有技术中存在的缺点,而提出的一种复合光伏焊带。
为了实现上述目的,本发明采用了如下技术方案:一种复合光伏焊带,包括铜制基带和折叠部分,所述铜制基带在中间位置设置有折叠部分,所述铜制基带上顶面焊接有第一导热带,且第一导热带上顶面焊接有焊接块,所述焊接块底面设有第二导热带,且第二导热带顶面焊接有反射块,所述反射块表面开设有反射槽,所述焊接块外表面镀有保护层,所述铜制基带底面镀有合金层,且合金层底面涂抹有导电涂层,所述合金层表面开设有摩擦齿,所述折叠部分之间设有顺水槽。
作为上述技术方案的进一步描述:
所述折叠部分设置有两个,且折叠部分为三角形结构。
作为上述技术方案的进一步描述:
所述摩擦齿设置有多个,且多个摩擦齿均匀开设于合金层底面两侧。
作为上述技术方案的进一步描述:
所述铜制基带与折叠部分为一体式结构,所述第一导热带与第二导热带焊接。
作为上述技术方案的进一步描述:
所述铜制基带为长条状结构,且铜制基带刚度较低。
作为上述技术方案的进一步描述:
所述焊接块设置有多个,且焊接块为三角形结构,所述反射槽开设有多个。
本发明中,首先设置有折叠部分,折叠部分使铜制基带呈现M型,由于光伏电板容易受到热障冷缩影响,传统的光伏焊带不能进行收缩,光伏电板容易产生拉伸破裂,而本装置设置的折叠部分会在光伏电板变形时跟着光伏电板进行伸长,增加本装置的形变量,使光伏电板变形时不受光伏焊带影响而碎裂,保护了光伏电板的完整性,其次设置了导电涂层和合金层,导电涂层设置在合金层外表面,在进行焊接时,导电涂层进行导电并进行融化,使合金层加热并开始融化,随后铜制基带开始融化,融化后的合金层率先接触光伏电板,由于合金层熔点较低,光伏电板首先接触融化后的合金层,并由于热效应变热,再次接触温度过高的融化后的铜制基带时避免温差过大而产生碎裂,保护了光伏电板的完整性,提高了光伏电板的使用时长,最后设置了焊接块,焊接块顶面设有反射块,反射块表面开设有反射槽,反射槽设置有多个,光照射进来后经过反射槽多次反射,提高了光利用率,提高了使用效率。
附图说明
图1为本发明提出的一种复合光伏焊带的剖视图;
图2为本发明提出的一种复合光伏焊带的主视图;
图3为本发明焊接块的剖视图。
图例说明:
1-铜制基带、2-第一导热带、3-保护层、4-焊接块、5-反射块、6-顺水槽、7-折叠部分、8-摩擦齿、9-导电涂层、10-合金层、11-第二导热带、12-反射槽。
实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。
参照图1-3,一种复合光伏焊带,包括铜制基带1和折叠部分7,铜制基带1在中间位置设置有折叠部分7,铜制基带7上顶面焊接有第一导热带2,且第一导热带2上顶面焊接有焊接块4,焊接块4底面设有第二导热带11,且第二导热带11顶面焊接有反射块5,反射块5表面开设有反射槽12,焊接块4外表面镀有保护层3,铜制基带1底面镀有合金层10,且合金层10底面涂抹有导电涂层9,合金层10表面开设有摩擦齿8,折叠部分7之间设有顺水槽6。
折叠部分7设置有两个,且折叠部分7为三角形结构,摩擦齿8设置有多个,且多个摩擦齿8均匀开设于合金层10底面两侧,铜制基带1与折叠部分7为一体式结构,第一导热带2与第二导热带11焊接,铜制基带1为长条状结构,且铜制基带1刚度较低,焊接块4设置有多个,且焊接块4为三角形结构,反射槽12开设有多个。
顺水槽6在下雨时,雨水能在顺水槽6中凝结流淌,防止雨水长期堆积腐蚀铜制基带1,摩擦齿8防止在焊接时本装置发生滑动而影响焊接质量。
工作原理:使用时,折叠部分7使铜制基带1呈现M型,由于光伏电板容易受到热障冷缩影响,传统的光伏焊带不能进行收缩,光伏电板容易产生拉伸破裂,而本装置设置的折叠部分7会在光伏电板变形时跟着光伏电板进行伸长,增加本装置的形变量,使光伏电板变形时不受光伏焊带影响而碎裂,保护了光伏电板的完整性,导电涂层9设置在合金层10外表面,在进行焊接时,导电涂层9进行导电并进行融化,使合金层10加热并开始融化,随后铜制基带1开始融化,融化后的合金层10率先接触光伏电板,由于合金层10熔点较低,光伏电板首先接触融化后的合金层10,并由于热效应变热,再次接触温度过高的融化后的铜制基带1时避免温差过大而产生碎裂,保护了光伏电板的完整性,提高了光伏电板的使用时长,焊接块4顶面设有反射块5,反射块5表面开设有反射槽12,反射槽12设置有多个,光照射进来后经过反射槽12多次反射,提高了光利用率,提高了使用效率。
以上所述,仅为本发明较佳的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,根据本发明的技术方案及其发明构思加以等同替换或改变,都应涵盖在本发明的保护范围之内。

Claims (3)

1.一种复合光伏焊带,包括铜制基带(1)和折叠部分(7),其特征在于,所述铜制基带(1)在中间位置设置有折叠部分(7),所述铜制基带(1)上顶面焊接有第一导热带(2),且第一导热带(2)上顶面焊接有焊接块(4),所述焊接块(4)底面设有第二导热带(11),且第二导热带(11)顶面焊接有反射块(5),所述反射块(5)表面开设有反射槽(12),所述焊接块(4)外表面镀有保护层(3),所述铜制基带(1)底面镀有合金层(10),且合金层(10)底面涂抹有导电涂层(9),所述合金层(10)表面开设有摩擦齿(8),所述折叠部分(7)之间设有顺水槽(6);
所述折叠部分(7)设置有两个,且折叠部分(7)为三角形结构;
所述铜制基带(1)与折叠部分(7)为一体式结构,所述第一导热带(2)与第二导热带(11)焊接;
所述焊接块(4)设置有多个,且焊接块(4)为三角形结构,所述反射槽(12)开设有多个。
2.根据权利要求1所述的一种复合光伏焊带,其特征在于,所述摩擦齿(8)设置有多个,且多个摩擦齿(8)均匀开设于合金层(10)底面两侧。
3.根据权利要求1所述的一种复合光伏焊带,其特征在于,所述铜制基带(1)为长条状结构,且铜制基带(1)刚度较低。
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