WO2016047451A1 - Tampon abrasif - Google Patents

Tampon abrasif Download PDF

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Publication number
WO2016047451A1
WO2016047451A1 PCT/JP2015/075714 JP2015075714W WO2016047451A1 WO 2016047451 A1 WO2016047451 A1 WO 2016047451A1 JP 2015075714 W JP2015075714 W JP 2015075714W WO 2016047451 A1 WO2016047451 A1 WO 2016047451A1
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WO
WIPO (PCT)
Prior art keywords
polishing
region
polishing pad
double
layer
Prior art date
Application number
PCT/JP2015/075714
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English (en)
Japanese (ja)
Inventor
中村　賢治
Original Assignee
東洋ゴム工業株式会社
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Priority claimed from JP2015133264A external-priority patent/JP2016066781A/ja
Application filed by 東洋ゴム工業株式会社 filed Critical 東洋ゴム工業株式会社
Publication of WO2016047451A1 publication Critical patent/WO2016047451A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a polishing pad for use in planarizing unevenness on a surface of an object to be polished such as a semiconductor wafer by chemical mechanical polishing (CMP), and more specifically, a window for detecting a polishing state or the like by optical means.
  • CMP chemical mechanical polishing
  • the present invention relates to a polishing pad having (light transmission region) and a method for manufacturing a semiconductor device using the polishing pad.
  • a conductive film is formed on the surface of a semiconductor wafer (hereinafter also referred to as a wafer), and a wiring layer is formed by photolithography, etching, or the like. Processes for forming an insulating film and the like are performed, and unevenness made of a conductor such as metal or an insulator is generated on the wafer surface by these processes. In recent years, miniaturization of wiring and multilayer wiring have been advanced for the purpose of increasing the density of semiconductor integrated circuits, and along with this, technology for flattening the irregularities on the wafer surface has become important.
  • CMP is a technique of polishing using a slurry-like abrasive (hereinafter referred to as slurry) in which abrasive grains are dispersed in a state where the surface to be polished of a wafer is pressed against the polishing surface of a polishing pad.
  • slurry a slurry-like abrasive
  • the optical detection means is a method of detecting an end point of polishing by irradiating a wafer with a light beam through a window (light transmission region) through a polishing pad and monitoring an interference signal generated by the reflection. It is.
  • polishing pads have been proposed for use in the polishing end point detection method using such optical means.
  • the wiring width of integrated circuits is expected to become even smaller. Therefore, a polishing pad capable of highly accurate optical end point detection is required. .
  • Patent Document 1 discloses a polishing pad for performing chemical mechanical planarization of a semiconductor substrate, A polishing pad body having an opening formed therein; A window fixed in the opening for performing in-situ optical measurement of the substrate, the window having a lower surface capable of receiving light incident thereon, and the lower surface is A polishing pad that has been processed by laser ablation to remove a rough surface portion present on the lower surface has been proposed.
  • Patent Document 2 a polishing surface and a non-polishing surface opposite to the polishing surface are provided, and there is a light-transmitting region that optically communicates from the polishing surface to the non-polishing surface.
  • a chemical mechanical polishing pad is proposed in which the surface roughness (Ra) of the polishing surface is 10 ⁇ m or less, and the transmittance of the light-transmitting region to light having a wavelength of 633 nm is 12 to 70%.
  • Patent Document 3 a chemical mechanical polishing pad having a polishing surface and a non-polishing surface opposite to the polishing surface, A light-transmitting region that optically communicates from the polished surface to the non-polished surface;
  • a chemical mechanical polishing pad is proposed in which the surface roughness (Ra) of the non-polishing surface in the light-transmitting region is smaller than the surface roughness (Ra) of the polishing surface.
  • An object of the present invention is to provide a polishing pad capable of detecting an optical end point with high accuracy even though the back surface of the window has a structure bonded to an adhesive member.
  • the present invention provides a polishing pad in which a polishing layer having a polishing region and a light transmission region and a support layer having an opening are laminated via an adhesive member so that the light transmission region and the opening overlap each other.
  • the adhesive member is preferably an adhesive layer or a double-sided tape having an adhesive layer on both sides of the substrate.
  • the polishing region, the adhesive member, the support layer, and the double-sided adhesive sheet are laminated in this order, and light is transmitted through the polishing region, the adhesive member, and the support layer, and on the double-sided adhesive sheet.
  • region it is related with the polishing pad characterized by arithmetic mean roughness Ra of the back surface of the said double-sided adhesive sheet in the said opening part being 1 micrometer or less.
  • a polishing pad having a structure in which the back surface of the light transmission region is bonded to an adhesive member or a double-sided adhesive sheet has a problem that the optical end point detection accuracy is very low compared to a polishing pad in which the back surface of the light transmission region is exposed.
  • the inventor has the reason that the light beam is absorbed or scattered by the adhesive member or the double-sided adhesive sheet provided on the back surface of the light transmission region before the light beam enters the light transmission region. Thought. Then, as a result of intensive studies, the present inventor reduced the light scattering of the light beam by setting the arithmetic average roughness Ra of the back surface of the adhesive member or the double-sided adhesive sheet in the opening to 1 ⁇ m or less as described above. It was found that the optical end point detection can be performed with high accuracy.
  • the present invention also relates to a method for manufacturing a semiconductor device including a step of polishing a surface of a semiconductor wafer using the polishing pad.
  • the polishing pad of the present invention does not expose the back surface of the light transmission region, and can detect an optical end point with high accuracy despite having a structure bonded to an adhesive member or a double-sided adhesive sheet.
  • the polishing pad of the present invention has a structure in which a polishing layer having a polishing region and a light transmission region and a support layer having an opening are laminated via an adhesive member so that the light transmission region and the opening overlap each other.
  • a polishing region, an adhesive member, a support layer, and a double-sided adhesive sheet are laminated in this order, and within the opening passing through the polishing region, the adhesive member, and the support layer and on the double-sided adhesive sheet Has a structure in which a light transmission region is provided.
  • the polishing region is not particularly limited as long as it is a foam having fine bubbles.
  • polyurethane resin polyurethane resin, polyester resin, polyamide resin, acrylic resin, polycarbonate resin, halogen resin (polyvinyl chloride, polytetrafluoroethylene, polyvinylidene fluoride, etc.), polystyrene, olefin resin (polyethylene, polypropylene, etc.), epoxy resin 1 type, or 2 or more types of mixtures, such as a photosensitive resin, is mentioned.
  • Polyurethane resin is particularly preferable as a material for forming a polishing region because it has excellent wear resistance and a polymer having desired physical properties can be easily obtained by variously changing the raw material composition.
  • the polyurethane resin will be described on behalf of the foam.
  • the polyurethane resin is composed of an isocyanate component, a polyol component (high molecular weight polyol, low molecular weight polyol), and a chain extender.
  • the isocyanate component a known compound in the field of polyurethane can be used without particular limitation.
  • the isocyanate component 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 2,2′-diphenylmethane diisocyanate, 2,4′-diphenylmethane diisocyanate, 4,4′-diphenylmethane diisocyanate, 1,5-naphthalene diisocyanate, aromatic diisocyanates such as p-phenylene diisocyanate, m-phenylene diisocyanate, p-xylylene diisocyanate, m-xylylene diisocyanate; ethylene diisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, 1,6-hexamethylene diisocyanate, etc.
  • Aliphatic diisocyanate 1,4-cyclohexane diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, isophorone diisocyanate Isocyanate, alicyclic diisocyanates such as norbornane diisocyanate. These may be used alone or in combination of two or more.
  • Examples of the high molecular weight polyol include those usually used in the technical field of polyurethane. Examples include polyether polyols typified by polytetramethylene ether glycol, polyethylene glycol, etc., polyester polyols typified by polybutylene adipate, polycaprolactone polyols, reactants of polyester glycols such as polycaprolactone and alkylene carbonate, etc. Polyester polycarbonate polyol obtained by reacting ethylene carbonate with polyhydric alcohol and then reacting the obtained reaction mixture with organic dicarboxylic acid, polycarbonate polyol obtained by transesterification of polyhydroxyl compound and aryl carbonate Etc. These may be used alone or in combination of two or more.
  • low molecular weight polyamines such as ethylenediamine, tolylenediamine, diphenylmethanediamine, and diethylenetriamine
  • alcohol amines such as monoethanolamine, 2- (2-aminoethylamino) ethanol, and monopropanolamine can be used in combination.
  • These low molecular weight polyols and low molecular weight polyamines may be used alone or in combination of two or more.
  • the blending amount of the low molecular weight polyol, the low molecular weight polyamine or the like is not particularly limited, and is appropriately determined depending on the characteristics required for the polishing pad to be produced.
  • a chain extender is used for curing the prepolymer.
  • the chain extender is an organic compound having at least two active hydrogen groups, and examples of the active hydrogen group include a hydroxyl group, a primary or secondary amino group, and a thiol group (SH).
  • the ratio of the isocyanate component, the polyol component, and the chain extender can be variously changed depending on the molecular weight of each, the desired physical properties of the polishing pad, and the like.
  • the number of isocyanate groups of the isocyanate component relative to the total number of active hydrogen groups (hydroxyl group + amino group) of the polyol component and the chain extender is 0.80 to 1.20. Is more preferable, and 0.99 to 1.15 is more preferable. When the number of isocyanate groups is outside the above range, curing failure occurs and the required specific gravity and hardness cannot be obtained, and the polishing characteristics tend to be deteriorated.
  • the polyurethane resin foam can be produced by applying a known urethanization technique such as a melting method or a solution method, but is preferably produced by a melting method in consideration of cost, working environment, and the like.
  • the polyurethane resin foam can be produced by either the prepolymer method or the one-shot method.
  • an isocyanate-terminated prepolymer is synthesized beforehand from an isocyanate component and a polyol component, and this is reacted with a chain extender.
  • the polymer method is preferred because the resulting polyurethane resin has excellent physical properties.
  • Examples of the method for producing a polyurethane resin foam include a method of adding hollow beads, a mechanical foaming method, and a chemical foaming method.
  • a mechanical foaming method using a silicone surfactant which is a copolymer of polyalkylsiloxane and polyether and does not have an active hydrogen group is preferred.
  • stabilizers such as antioxidants, lubricants, pigments, fillers, antistatic agents, and other additives may be added.
  • the polyurethane resin foam may be a closed cell type or an open cell type.
  • Polyurethane resin foam can be manufactured by batch feeding each component into a container and stirring, or by continuously supplying each component and non-reactive gas to the stirring device and stirring, It may be a continuous production method in which a dispersion is sent out to produce a molded product.
  • a thin sheet may be used.
  • a raw material resin may be dissolved and extruded from a T-die to directly obtain a sheet-like polyurethane resin foam.
  • the average cell diameter of the polyurethane resin foam is preferably 30 to 80 ⁇ m, more preferably 30 to 60 ⁇ m. When deviating from this range, the polishing rate tends to decrease, or the planarity of the polished material (wafer) after polishing tends to decrease.
  • the specific gravity of the polyurethane resin foam is preferably 0.5 to 1.3.
  • the specific gravity is less than 0.5, the surface strength of the polishing region decreases, and the planarity of the material to be polished tends to decrease.
  • the ratio is larger than 1.3, the number of bubbles on the surface of the polishing region decreases, and planarity is good, but the polishing rate tends to decrease.
  • the hardness of the polyurethane resin foam is preferably 40 to 75 degrees as measured by an Asker D hardness meter.
  • Asker D hardness is less than 40 degrees, the planarity of the material to be polished is lowered, and when it is larger than 75 degrees, the planarity is good, but the uniformity (uniformity) of the material to be polished is lowered. There is a tendency.
  • the polishing surface that comes into contact with the material to be polished in the polishing region preferably has a concavo-convex structure for holding and renewing the slurry.
  • the polishing area made of foam has many openings on the polishing surface and has the function of holding and updating the slurry.
  • the slurry can be held and updated more efficiently. It can be performed well, and destruction of the material to be polished due to adsorption with the material to be polished can be prevented.
  • the concavo-convex structure is not particularly limited as long as it is a shape that holds and renews the slurry.
  • an XY lattice groove for example, an XY lattice groove, a concentric circular groove, an opening, a hole that does not penetrate, a polygonal column, a cylinder, a spiral groove, Examples include eccentric circular grooves, radial grooves, and combinations of these grooves.
  • these uneven structures are generally regular, but in order to make the slurry retention and renewability desirable, the groove pitch, groove width, groove depth, etc. should be changed for each range. Is also possible.
  • the shape of the polishing region is not particularly limited, and may be circular or long.
  • the size of the polishing region can be appropriately adjusted according to the polishing apparatus to be used. In the case of a circular shape, the diameter is about 30 to 150 cm, and in the case of a long shape, the length is about 5 to 15 m.
  • the width is about 60 to 250 cm.
  • the thickness of the polishing region is not particularly limited, but is usually about 0.8 to 4 mm, preferably 1.2 to 2.5 mm.
  • the material for forming the light transmission region is not particularly limited, but it is possible to detect the optical end point with high accuracy while polishing, and use a material having a light transmittance of 10% or more over the entire wavelength range of 400 to 700 nm. More preferred is a material having a light transmittance of 20% or more, and still more preferred is a material having a light transmittance of 50% or more.
  • Such materials include polyurethane resins, polyester resins, phenol resins, urea resins, melamine resins, epoxy resins, and acrylic resins, and other thermosetting resins, polyurethane resins, polyester resins, polyamide resins, cellulose resins, Acrylic resins, polycarbonate resins, halogen resins (polyvinyl chloride, polytetrafluoroethylene, polyvinylidene fluoride, etc.), polystyrene, olefin resins (polyethylene, polypropylene, etc.), thermoplastic resins, butadiene rubber, isoprene rubber, etc. Examples thereof include rubber, photo-curing resin that is cured by light such as ultraviolet rays and electron beams, and photosensitive resin. These resins may be used alone or in combination of two or more.
  • the material used for the light transmission region is preferably the same or larger in grindability than the material used for the polishing region.
  • Grindability refers to the degree to which a material to be polished is ground during polishing. In such a case, the light transmission region does not protrude from the polishing region, and scratches on the material to be polished and dechucking errors during polishing can be prevented.
  • a forming material used for the polishing region or a material similar to the physical properties of the polishing region it is preferable to use a forming material used for the polishing region or a material similar to the physical properties of the polishing region.
  • a highly abrasion-resistant polyurethane resin that can suppress light scattering in the light transmission region due to dressing marks during polishing is desirable.
  • the shape and size of the light transmission region are not particularly limited, but it is preferable to have the same shape and size as the opening of the polishing region.
  • the Asker D hardness in the light transmission region is preferably 30 to 75 degrees.
  • the Asker D hardness in the light transmission region is more preferably 40 to 75 degrees.
  • the support layer supplements the characteristics of the polishing region.
  • a layer having a lower elastic modulus than the polishing region (cushion layer) may be used, or a layer having a higher elastic modulus than the polishing region (high elastic layer) may be used.
  • the cushion layer is necessary in order to achieve both planarity and uniformity in a trade-off relationship in CMP.
  • Planarity refers to the flatness of a pattern portion when a material having fine irregularities generated during pattern formation is polished
  • uniformity refers to the uniformity of the entire material to be polished. The planarity is improved by the characteristics of the polishing region, and the uniformity is improved by the characteristics of the cushion layer.
  • the high elastic layer is used for improving the planarization characteristics of the polishing pad when a soft polishing region is used in CMP to suppress the occurrence of scratches.
  • a highly elastic layer it is possible to suppress excessive cutting of the edge portion of the material to be polished.
  • the cushion layer examples include fiber nonwoven fabrics such as polyester nonwoven fabric, nylon nonwoven fabric, and acrylic nonwoven fabric; resin-impregnated nonwoven fabrics such as polyester nonwoven fabric impregnated with polyurethane; polymer resin foams such as polyurethane foam and polyethylene foam; butadiene rubber and Examples thereof include rubber resins such as isoprene rubber; and photosensitive resins.
  • the thickness of the cushion layer is not particularly limited, but is preferably 300 to 1800 ⁇ m, more preferably 700 to 1400 ⁇ m.
  • Examples of the highly elastic layer include a metal sheet and a resin film.
  • Examples of the resin film include polyester films such as polyethylene terephthalate film and polyethylene naphthalate film; polyolefin films such as polyethylene film and polypropylene film; nylon film; polyimide film and the like.
  • the highly elastic layer it is preferable to use a resin film having a dimensional change rate of 1.2% or less after heating at 150 ° C. for 30 minutes and before heating.
  • a resin film having a dimensional change rate of 0.8% or less is more preferable, and a resin film having a dimensional change rate of 0.4% or less is particularly preferable.
  • the resin film having such characteristics include a polyethylene terephthalate film, a polyethylene naphthalate film, a polyimide film, and the like that have been subjected to heat shrink treatment.
  • the thickness of the highly elastic layer is not particularly limited, but is preferably 10 to 200 ⁇ m, more preferably 15 to 55 ⁇ m from the viewpoints of rigidity and dimensional stability during heating.
  • FIG. 2 is a schematic sectional view showing an example of the polishing pad of the present invention.
  • the polishing region 8 is provided with a light transmission region 9 for detecting an optical end point while polishing.
  • the light transmission region 9 is fixed by being fitted into an opening 10 provided in the polishing region 8 and adhered to the adhesive member 11 below the polishing region 8.
  • the support layer 12 has an opening 13 for transmitting light.
  • the opening 13 may be the same size as the opening 10, may be smaller than the opening 10, or may be larger than the opening 10.
  • the adhesive member 11 it is preferable to use an adhesive layer containing a pressure-sensitive adhesive or a hot melt adhesive, or a double-sided tape in which the adhesive layer is provided on both surfaces of a base material.
  • the double-sided tape is suitable because it prevents the slurry from penetrating to the support layer side by the base material and can effectively prevent peeling between the support layer and the adhesive layer.
  • the base material examples include a resin film
  • examples of the resin film include a polyester film such as a polyethylene terephthalate film and a polyethylene naphthalate film; a polyolefin film such as a polyethylene film and a polypropylene film; a nylon film; and a polyimide film.
  • a polyester film having excellent properties for preventing water permeation.
  • the surface of the substrate may be subjected to easy adhesion treatment such as corona treatment or plasma treatment.
  • the thickness of the substrate is not particularly limited, but is preferably 10 to 200 ⁇ m, more preferably 15 to 55 ⁇ m from the viewpoint of transparency, flexibility, rigidity, dimensional stability during heating, and the like.
  • the thickness of the adhesive layer is preferably 10 to 300 ⁇ m, more preferably 25 to 200 ⁇ m.
  • the arithmetic average roughness Ra of the back surface 14 of the adhesive member 11 in the opening 13 is 1 ⁇ m or less, preferably 0.5 ⁇ m or less, more preferably 0.3 ⁇ m or less, and further preferably 0.2 ⁇ m or less. .
  • the method for setting the arithmetic average roughness Ra to 1 ⁇ m or less is not particularly limited, and examples thereof include the following methods.
  • a release film for protecting the adhesive surface is usually provided on the surface of the adhesive layer or the double-sided tape, and it is peeled off during use.
  • the arithmetic average roughness Ra of the surface of a general release film is about 2 to 3 ⁇ m, and the arithmetic average roughness Ra of the surface of the adhesive layer in close contact with the release film is also about 2 to 3 ⁇ m.
  • the release film having a surface arithmetic average roughness Ra of 1 ⁇ m or less the surface roughness is transferred to the surface of the adhesive layer, and the surface of the adhesive layer or double-sided tape is arithmetically averaged.
  • Ra can be 1 ⁇ m or less.
  • Examples of the release film having an arithmetic mean surface roughness Ra of 1 ⁇ m or less include polyester films such as polyethylene terephthalate film and polyethylene naphthalate film; polyolefin films such as polyethylene film and polypropylene film; nylon film; polyimide film and the like. It is done.
  • FIG. 3 is a schematic sectional view showing another example of the polishing pad of the present invention.
  • the polishing layer 8, the adhesive member 11, the support layer 12, and the double-sided adhesive sheet 15 are laminated in this order, and the inside of the opening 16 that penetrates the polishing layer 8, the adhesive member 11, and the support layer 12.
  • the light transmission region 9 is provided on the double-sided adhesive sheet 15.
  • the double-sided adhesive sheet 15 has an adhesive layer on both sides of the substrate, and the double-sided tape can be used.
  • the double-sided adhesive sheet 15 is used for bonding the polishing pad 1 to the polishing surface plate 2.
  • the polishing pad 1 can be manufactured, for example, by the following method. First, the polishing layer 8 and the support layer 12 are laminated via the adhesive member 11 to produce a laminated sheet. Openings 16 are formed in the produced laminated sheet. A double-sided adhesive sheet 15 is affixed to the support layer 12 of the laminated sheet in which the opening 16 is formed. Thereafter, the light transmission region 9 is provided in the opening 16 and on the double-sided adhesive sheet 15. Alternatively, the double-sided adhesive sheet 15 may be attached to the support layer 12 and the light transmission region 9 after the light transmission region 9 is inserted into the opening 16.
  • the arithmetic average roughness Ra of the back surface 14 of the double-sided adhesive sheet 15 in the opening 16 is 1 ⁇ m or less, preferably 0.5 ⁇ m or less, more preferably 0.3 ⁇ m or less, and even more preferably 0.2 ⁇ m or less. is there.
  • the method for setting the arithmetic average roughness Ra to 1 ⁇ m or less is not particularly limited, and examples thereof include the same method as described above.
  • the surface height of the light transmission region 9 is preferably the same as the surface height of the polishing region 8 or lower than the surface height of the polishing region 8.
  • the surface height of the light transmission region 9 is higher than the surface height of the polishing region 8, there is a risk of damaging the material to be polished by the protruding portion during polishing. Further, the light transmission region 9 is deformed by a stress applied during polishing, and is greatly distorted optically, so that there is a possibility that the optical end point detection accuracy of polishing is lowered.
  • the semiconductor device is manufactured through a process of polishing the surface of the semiconductor wafer using the polishing pad.
  • a semiconductor wafer is generally a laminate of a wiring metal and an oxide film on a silicon wafer.
  • the method and apparatus for polishing the semiconductor wafer are not particularly limited.
  • a polishing surface plate 2 that supports the polishing pad 1
  • a support table (polishing head) 5 that supports the semiconductor wafer 4
  • This is performed using a backing material for performing uniform pressurization and a polishing apparatus equipped with a polishing agent 3 supply mechanism.
  • the polishing pad 1 is attached to the polishing surface plate 2 by attaching it with a double-sided tape, for example.
  • the polishing surface plate 2 and the support base 5 are disposed so that the polishing pad 1 and the semiconductor wafer 4 supported on each of the polishing surface plate 2 and the support table 5 face each other, and are provided with rotating shafts 6 and 7 respectively. Further, a pressurizing mechanism for pressing the semiconductor wafer 4 against the polishing pad 1 is provided on the support base 5 side. In polishing, the semiconductor wafer 4 is pressed against the polishing pad 1 while rotating the polishing surface plate 2 and the support base 5, and polishing is performed while supplying slurry.
  • the flow rate of the slurry, the polishing load, the polishing platen rotation speed, and the wafer rotation speed are not particularly limited and are appropriately adjusted.
  • the protruding portion of the surface of the semiconductor wafer 4 is removed and polished flat. Thereafter, a semiconductor device is manufactured by dicing, bonding, packaging, or the like. The semiconductor device is used for an arithmetic processing device, a memory, and the like.
  • Example 1 [Production of light transmission region] 100 parts by weight of a polyether-based prepolymer (manufactured by Uniroyal Corporation, adiprene L-325, NCO concentration: 2.22 meq / g) was preliminarily adjusted to 70 ° C., and 4,4′- 26 parts by weight of methylenebis (o-chloroaniline) (Ihara Chemical Amine, Iharacamine MT) was added and stirred for about 1 minute. Then, the mixed solution was poured into a mold kept at 100 ° C. and post-cured at 100 ° C. for 8 hours to produce a polyurethane resin. The produced polyurethane resin was cut with a Thomson blade of a predetermined size to produce a light transmission region (55.8 mm ⁇ 19.8 mm, thickness 1.95 mm).
  • a polyether-based prepolymer manufactured by Uniroyal Corporation, adiprene L-325, NCO concentration: 2.22 meq / g
  • this sheet was subjected to surface buffing to a predetermined thickness using a buffing machine (manufactured by Amitech Co., Ltd.) to obtain a sheet with adjusted thickness accuracy (sheet thickness: 2.00 mm).
  • This buffed sheet is punched into a predetermined diameter (76 cm), and a groove processing machine (manufactured by Toho Steel Co., Ltd.) is used to make the surface have a groove width of 0.40 mm, a groove pitch of 3.10 mm, and a groove depth of 0.76 mm. Concentric grooves were processed. Thereafter, an opening (56 mm ⁇ 20 mm) for fitting the light transmission region into a predetermined position of the grooved sheet was formed to prepare a polishing region.
  • a laminator is used to have an adhesive layer on both surfaces of the substrate, and the surface of the adhesive layer is a release film (adhesive layer)
  • a double-sided tape (Sekisui Chemical Co., Ltd., thickness: 0.15 mm) protected with an arithmetic average roughness Ra of the surface in contact with the substrate is attached while peeling the release film, and further in the polishing region.
  • a light-transmitting region was fitted in the opening and bonded to the double-sided tape to prepare a polishing layer with double-sided tape.
  • a cushioning layer made of polyethylene foam (Toray Industries Inc., TORAYPEF, thickness: 0.8 mm) buffed and corona-treated is bonded to the adhesive layer of the prepared double-sided taped abrasive layer using a laminator.
  • a polishing sheet was prepared.
  • a double-sided adhesive sheet was bonded to the cushion layer of the polishing sheet to obtain a laminate.
  • an opening having a size of 60 mm ⁇ 20 mm was formed only in the cushion layer and the double-sided adhesive sheet of the laminate, and a polishing pad having the structure of FIG. 2 was produced.
  • Example 2 [Production of polishing area with double-sided tape] A polished region was produced in the same manner as in Example 1. Thereafter, a double-sided tape was attached to the surface of the polishing region opposite to the grooved surface using a laminating machine to prepare a polishing region with a double-sided tape.
  • a cushion layer made of polyethylene foam (Toray Industries, Toraypef, thickness: 0.8 mm) buffed and corona-treated is bonded to the adhesive layer in the polishing area with double-sided tape using a laminator.
  • a polishing sheet was prepared.
  • an opening having a size of 60 mm ⁇ 20 mm was formed in the polishing sheet.
  • both sides of the substrate have adhesive layers, and the surfaces of the adhesive layers are protected by a release film (the arithmetic average roughness Ra of the surface in contact with the adhesive layer Ra: 0.17 ⁇ m).
  • a sheet (base material: polyethylene terephthalate, thickness 25 ⁇ m) was bonded to the cushion layer of the polishing sheet with a laminator while peeling the release film to obtain a laminate. Thereafter, the light transmissive region produced in Example 1 was fitted into the opening of the laminate and bonded to the double-sided adhesive sheet to produce a polishing pad having the structure of FIG.
  • Comparative Example 1 In preparation of the polishing layer with a double-sided tape of Example 1, it has an adhesive layer on both surfaces of the base material, and the surface of the adhesive layer is a release film (the arithmetic average roughness Ra of the surface in contact with the adhesive layer)
  • a polishing pad having the structure of FIG. 2 was prepared in the same manner as in Example 1 except that a double-sided tape protected with 1.5 ⁇ m) (base material: polyethylene terephthalate, thickness 25 ⁇ m) was used.
  • the polishing pad of the present invention is used to flatten optical materials such as lenses and reflection mirrors, silicon wafers, glass substrates for hard disks, aluminum substrates, and materials that require high surface flatness such as general metal polishing. Used for processing.
  • the polishing pad of the present invention is particularly suitable for a step of planarizing a silicon wafer and a device having an oxide layer, a metal layer, etc. formed thereon, before further laminating and forming these oxide layers and metal layers. Used for.
  • Polishing pad 2 Polishing surface plate 3: Abrasive (slurry) 4: Material to be polished (semiconductor wafer) 5: Support base (polishing head) 6, 7: Rotating shaft 8: Polishing area 9: Light transmission area 10, 13, 16: Opening 11: Adhesive member 12: Support layer 14: Back surface of adhesive member or double-sided adhesive sheet in opening 15: Double-sided adhesive sheet

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'objet de la présente invention est de proposer un tampon abrasif qui, bien qu'étant structuré de telle sorte que la surface arrière d'une fenêtre est collée à un élément adhésif, est capable d'effectuer une détection de point final optique de grande précision. Le tampon abrasif comprend une couche abrasive comprenant une région abrasive et une région de transmission de lumière, et une couche de support comprenant une partie d'ouverture, les couches étant stratifiées par l'intermédiaire d'un élément adhésif, la région de transmission de lumière et la partie d'ouverture se chevauchant l'une l'autre, et est caractérisé en ce que la surface arrière de l'élément adhésif dans la partie d'ouverture a une rugosité moyenne arithmétique Ra ne dépassant pas 1 μm.
PCT/JP2015/075714 2014-09-24 2015-09-10 Tampon abrasif WO2016047451A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014-193635 2014-09-24
JP2014193635 2014-09-24
JP2015-133264 2015-07-02
JP2015133264A JP2016066781A (ja) 2014-09-24 2015-07-02 研磨パッド

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WO2016047451A1 true WO2016047451A1 (fr) 2016-03-31

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI817982B (zh) * 2018-02-14 2023-10-11 日商信越半導體股份有限公司 雙面研磨方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004260156A (ja) * 2003-02-06 2004-09-16 Toyobo Co Ltd 研磨パッド及び半導体デバイスの製造方法
JP2014094424A (ja) * 2012-11-08 2014-05-22 Toyo Tire & Rubber Co Ltd 積層研磨パッド

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004260156A (ja) * 2003-02-06 2004-09-16 Toyobo Co Ltd 研磨パッド及び半導体デバイスの製造方法
JP2014094424A (ja) * 2012-11-08 2014-05-22 Toyo Tire & Rubber Co Ltd 積層研磨パッド

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI817982B (zh) * 2018-02-14 2023-10-11 日商信越半導體股份有限公司 雙面研磨方法

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