WO2016041884A1 - Circuit de protection contre les inversions de polarité pour un réseau de bord de véhicule à moteur et réseau de bord de véhicule à moteur - Google Patents

Circuit de protection contre les inversions de polarité pour un réseau de bord de véhicule à moteur et réseau de bord de véhicule à moteur Download PDF

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Publication number
WO2016041884A1
WO2016041884A1 PCT/EP2015/070914 EP2015070914W WO2016041884A1 WO 2016041884 A1 WO2016041884 A1 WO 2016041884A1 EP 2015070914 W EP2015070914 W EP 2015070914W WO 2016041884 A1 WO2016041884 A1 WO 2016041884A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor switch
protection circuit
load
polarity reversal
diode
Prior art date
Application number
PCT/EP2015/070914
Other languages
German (de)
English (en)
Inventor
Jordan Popov
Original Assignee
Continental Automotive Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Continental Automotive Gmbh filed Critical Continental Automotive Gmbh
Publication of WO2016041884A1 publication Critical patent/WO2016041884A1/fr

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
    • H02H11/002—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection
    • H02H11/003—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection using a field effect transistor as protecting element in one of the supply lines
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H1/00—Details of emergency protective circuit arrangements
    • H02H1/06—Arrangements for supplying operative power

Definitions

  • Polarity reversal protection circuit for a motor vehicle electrical system and vehicle electrical system
  • the invention relates to the field of vehicle electronics and in particular the field of protection circuits for electrical systems.
  • a motor vehicle electrical system If a motor vehicle electrical system is inadvertently connected to an external voltage source with reverse polarity, very high currents flow, which can destroy the battery and, in particular, semiconductors in the line path of the motor vehicle electrical system (hereafter: vehicle electrical system). This is the case in particular when there are synchronous rectifiers in the electrical system whose switches are constructed with MOSFETs. It is therefore important in the design of on-board networks to ensure that, above all, expensive power semiconductors are not damaged in the event of accidental connection with reverse polarity ("reverse polarity"). It is an object of the invention to provide an approach by means of which power semiconductors in a vehicle electrical system can be protected when an external voltage source with reverse polarity is connected.
  • inverse diode diodes are referred to, resulting within the structure of a transistor.
  • the inverse diode will also referred to as a substrate diode, body diode or parasitic substrate diode.
  • an ex ternal ⁇ inverse diode of a transistor is referred to as inverse diode, which are provided for hen outside the substrate, in which the transistor is constructed.
  • semiconductor disconnect switch As a semiconductor switch whschlei ⁇ terschalter be particularly referred, for example, semiconductor disconnect switch.
  • semiconductor switches in particular transistors such as MOSFETs, n-channel MOSFETs or IGBTs in Be ⁇ costume.
  • the semiconductor switch is designed in particular as a circuit breaker, ie as a switch that is not part of an electrical / electronic load, but to connect to this in series, and to disconnect the electrical system or the loads within the electrical system from the battery or to disconnect the battery.
  • the open semiconductor switch is brought into a closed switching state, so that the switching and (ie, the transistor element itself without inverse diode) relieve current carrying regions of the transistor, the Inversdi ⁇ ode.
  • the polarity reversal protection circuit includes a ground terminal, a positive pole and a half ⁇ conductor switch.
  • the semiconductor switch is provided with a Versode configured. Furthermore, the semiconductor switch is connected se ⁇ riell with the positive terminal or with the ground terminal.
  • the polarity reversal protection circuit may also have a positive electrical system connection, wherein the semiconductor switch between the positive vehicle electrical system connection (to connect the electrical system or the positive potential of the electrical system) and the positive terminal (such as a terminal for the positive battery teriepolpol) is connected in series. In this case, the semiconductor switch is connected upstream of the positive terminal.
  • the semiconductor switch of the polarity reversal protection circuit could also be connected upstream of the ground connection.
  • the semiconductor switch would (for connection of the electrical system and the earth potential of the onboard network ⁇ ) and the ground terminal (such as a terminal for the ne ⁇ gativen battery) connected in series in this case between the wiring ground connection.
  • the ground terminal such as a terminal for the ne ⁇ gativen battery
  • the wiring ground terminal and the ground terminal can be di rectly ⁇ interconnected and have the same potential, especially if the semiconductor single Rasch age is serially connected to the positive pole.
  • the positive pole terminal and the positive power supply board can be connected directly to each other and the same potential alswei ⁇ sen, particularly when the semiconductor single Rasch age is serially connected to the ground terminal.
  • the polarity reversal protection circuit further comprises a voltage source to switch the semiconductor switch in the reverse polarity case (in a conducting state), whereby the inverse diode of the semiconductor switch is relieved.
  • the voltage source is connected to a control input of the semiconductor switch.
  • the voltage source is set up to put the semiconductor switch in a conductive state via the control input, if the voltage potential of the ground terminal is above that of the positive terminal or if such Voltage is applied.
  • the power source is ⁇ staltet to generate a switching signal to apply it to the CON ⁇ ereingang of the semiconductor switch.
  • the voltage source may be a self-contained power source, such as a battery, a capacitor or the like which gege ⁇ is appropriate, arranged to be charged to the ground terminal and the positive pole.
  • the voltage source preferably has a voltage converter. This is equipped with an input which is connected directly or indi rectly ⁇ with the ground terminal and the positive pole.
  • the input is connected to receive, in whole or in part, a voltage applied between the ground terminal and the positive terminal.
  • the output of the voltage converter is connected to the control input of the semiconductor switch.
  • the Massean ⁇ circuit of the voltage converter or the input may be connected directly or indirectly to the vehicle power supply ground terminal.
  • the voltage converter or the input can instead be ver ⁇ connected with positive pole to the positive-board power supply.
  • the voltage converter which may also be referred to as a DCDC converter, may be an inductive or capacitive converter, such as a charge pump, a boost converter, an inverting converter, a synchronous converter, or may generally be provided with one or more energy storage devices (capacitors
  • the voltage at the output of the voltage converter in terms of the potential level ge ⁇ genüber ground (ground terminal or wiring ground terminal) or with respect to the positive pole or the positive power supply board is displaceable.
  • the voltage converter is preferably a transformer with galvanic isolation.
  • the voltage converter may comprise a transformer or a transformer for this purpose.
  • the voltage converter can be used as a flyback converter,
  • the voltage converter can be configured only in the case of reverse polarity, that is, when a voltage potential is applied to the mass and to the plus pole terminal, in which the potential of the ground terminal is higher than the Pluspolan ⁇ circuit to receive power via the input and at the output while there is no current at the input (and at the output) if there is no reverse polarity.
  • the voltage ⁇ converter can further include a smoothing energy storage such as a smoothing capacitor, or another delay element, by means of which for a predetermined time duration of the output of the voltage transformer, a switching signal (that is, a closing signal) applies to the semiconductor switch after the polarity reversal is no longer is present. This is used in particular to avoid oscillating states.
  • the voltage converter may further comprise an input-side check-in control circuit that conducts current when the voltage potential of the ground terminal is higher than the Pluspolan ⁇ circuit or when a voltage is applied to these terminals, which is negative.
  • the drive circuit may be set up to otherwise block a current flow to the voltage converter or to deliver no switching signal for closing the semiconductor switch. It may alternatively be provided that the drive circuit conducts current when the voltage at ground and positive pole terminal is negative, and that this state continues after this negative voltage is no longer present (ie, the polarity reversal is no longer present ⁇ ). This state can in particular be canceled by a clear signal or by the fact that the voltage converter (at least temporarily) receives no current at the input.
  • the drive circuit serves to activate the voltage converter.
  • the drive circuit may comprise a diode.
  • the drive circuit may have a coupled MOSFET, in particular a p-channel MOSFET.
  • the coupled MOSFET is a realization form of a feedback switching element, which can also be referred to as a monostable flip-flop due to its function. Is due to the thus configured control stage a negati ⁇ ve voltage (or other signal that indicates the state of a reverse polarity), then the control circuit goes into the conducting state or in a state in which the
  • Solid state switch (by means of the remaining voltage source) is driven to assume or maintain a conductive state.
  • the driver circuit Located on the drive stage negative voltage more (as a result of the conductive state of the semi-conductor switch), the driver circuit remains in a stand to ⁇ in which these drives the semiconductor switch (by means of the remaining voltage source) to maintain a conductive state.
  • the monostable multivibrator is reset again to a state in which the semiconductor switch is in the "non-conductive" state according to the activation
  • the conductive state is a power line between the semiconductor sections outside of the inverse diode, for the realization of a corresponding delay element may be an energy storage, such as a capacitor , be provided in the positive feedback circuit of the An horrschal ⁇ device, in particular in combination with a resistor to form an RC or LC element In stable or oscillating states of the semiconductor switch ef ⁇ êtiv be avoided.
  • the voltage source may have a supply input connected to the potential of the ground terminal and the potential the positive terminal is connected.
  • the voltage source is supplied via the supply input (which is preferably configured bipolar) with electrical energy. This is the case, in particular, if the voltage source is designed as a voltage converter (as described above) and is thus dependent on supply.
  • the voltage source further has an output which is connected to the control input and a further terminal of the semiconductor switch. A switching signal is transmitted to the semiconductor switch via the output of the voltage source.
  • the control input may be the base or the gate of a transistor forming the semiconductor switch.
  • the other terminal of the emitter or the source of the transistor may be that forms the semi ⁇ conductor switch.
  • the further connection serves to form another potential for the potential at the control input, in order to be able to apply a voltage between the two potentials which reproduces the control signal of the voltage source.
  • the voltage source may have a galvanic isolation between the supply input and the output and may be configured with a transformer or transformer as mentioned above.
  • the output via a galvanic isolator (such as a transformer or a transformer) may be connected to the semiconductor switch. This is the adaptation of the potential level between the power supply and semi ⁇ pus switch, if necessary.
  • the voltage source is preferably configured for supply voltages at the supply input and is in particular designed to operate at a supply voltage of not more than 500, 600, 800 mV or else 1 V or 1.2 V. These voltage values are in particular the minimum operating voltages of the voltage source.
  • a voltage can be used as the supply voltage, which voltage drops at a pn junction, in particular at a load connected to the semiconductor switch, which can be designed as a transistor with an inverse diode or can comprise this or is a diode.
  • the closed transistor or on the diode which is to be regarded as a load
  • only the forward voltage of the associated inverse diode which is approximately in the said range of 500 - 800 mV or 1000 mV or 1200 mV (or possibly also outside) can lie.
  • the load is in a use case of a rectifier circuit (as an active rectifier circuit including transistors which have an inverse diode or with a passive diode or rectifier diode) gebil ⁇ det, in particular of the DC side and output side of the rectifier circuit that conducts current approximately in the event of polarity reversal (because then the inverse diode or the diode is connected in the passage ⁇ direction) and is therefore considered as a load.
  • a rectifier circuit as an active rectifier circuit including transistors which have an inverse diode or with a passive diode or rectifier diode
  • gebil ⁇ det gebil ⁇ det
  • the voltage source is designed to work already with a supply voltage, that is the forward voltage of the connected transistor.
  • the minimum operating voltage can be below the specified voltage values .
  • the connected transistor is also referred to more generally as an electronic load switch.
  • the inverse diode of the semiconductor switch preferably has a forward direction to the positive pole terminal court ⁇ tet.
  • the semiconductor switch (which is designed in particular as a MOSFET) can be connected in the usual way (for example with the drain connection to the positive pole connection) to the positive pole connection.
  • a motor vehicle electrical system which is equipped with a Verpolschutzsciens, as set forth herein.
  • a load is connected in series with the semiconductor switch.
  • the series circuit of load and semiconductor switch resulting from this connection is connected between the ground connection and the positive pole connection.
  • a synchronous rectifier having to ⁇ least an active rectifier transistor versiode a home
  • a (passive) rectification for example, regarded as a load, in particular the output side and the electronic ⁇ rule switch (transistor with inverse diode or rectifier diode) of the rectifier and generally a load.
  • Loads are in particular electronic load switches.
  • the load or the at least one rectifier ⁇ tertransistor of the at least one rectifier diode may be connected in series with another component, which also conducts in Verpolungsfall, such as an inductance or De ⁇ ren DC resistance.
  • the load is not Shareerwei ⁇ se a functional load, whose operating current flows.
  • the load is also a load or a consumer, the or also generated in the non-working case, a current flow, in particular in the case of rectifier diode, rectifier ⁇ transistors or circuit breakers, due to their properties (such as an inverse diode between current-carrying terminals) in Reverse polarity case conduct electricity. Therefore, the load has, in particular an electronic circuit breaker with an inverse diode or at least one rectifier ⁇ terdiode.
  • the load and in particular the portions or components (such as an inverse diode) which carry current in the reverse polarity case have a higher high-current resistance than the inverse diode of the semiconductor switch.
  • the here for the inverse diode of the semiconductor switch Be ⁇ written .
  • the load can in particular take a transistor to ⁇ , such as a MOSFET or an IGBT, said transistor may have an inverse diode whose forward direction facing the positive pole.
  • the load may include a diode, such as a rectifier diode, as described above.
  • the load can be a solid state switch like that
  • the semiconductor switch of the load (which in particular corresponds to the electronic load switch) is designed with an inverse diode, as is the semiconductor switch of FIG
  • Polarity reversal protection circuit can be configured with an inverse diode.
  • the type of semiconductor switch the Polarity reversal protection circuit can correspond to the type of semiconductor switch of the load.
  • the load may be configured as a passive or a controlled rectifier (or as an inverter).
  • the substrate of the semi-conductor switch ⁇ the load is connected via a thermal resistance to a heat sink, which is smaller than a thermal resistance which connects the substrate of the semiconductor switch with a heat sink.
  • the semiconductor switch of the load can have better cooling or cooling connection than the semiconductor switch of the polarity reversal protection circuit.
  • the diode or Gleichrichterdi ⁇ ode or its substrate or semiconductor body of the load is connected via a thermal resistance to a heat sink, which is smaller than a thermal resistance which connects the substrate of the semiconductor switch with a heat sink. With ande ren ⁇ words, the diode of the load can better cooling or cooling connection as the semiconductor switch
  • the inverse diode of the semiconductor switch or the (rectifier ⁇ ter-) diode of the load may have a forward direction, the forward direction of the inverse diode of the
  • Polarity reversal protection corresponds.
  • the forward direction of the semiconductor switch of the load is preferably directed to the positive pole connection.
  • the diode of the load may belong to a rectifier ⁇ ter circuit or other circuit, such as an inverter.
  • FIG. 1 shows, by way of example, an automotive vehicle electrical system which is equipped with a polarity reversal protection circuit.
  • FIG. 1 shows an example of one described here
  • the motor vehicle electrical system 60 is shown only insofar as it is necessary to explain the invention.
  • the illustrated polarity reversal protection circuit 10 for a motor vehicle electrical system has a ground terminal 20, a positive terminal 22 and a semiconductor switch 30.
  • the semiconductor switch 30 is in particular a transistor, for example a
  • the semiconductor switch 30 is equipped with an inverse diode 32, whose forward direction to the positive terminal 20 has.
  • the semiconductor switch 30 is connected in series with the positive ⁇ pole terminal 22, but may also be connected in series with the ground terminal 20.
  • one of the current-carrying terminals (drain or source) is connected to the ground or positive terminal.
  • the polarity reversal protection circuit 10 also has a voltage source 40.
  • This may be self-sufficient, but is connected in the illustrated example via a supply connection 45 with the potentials of the ground and the plus-pole connections to connected by these electrical energy for operating the voltage ⁇ source.
  • the voltage source 40 can therefore also be regarded as a converter (DC voltage converter ⁇ ).
  • the voltage source is connected to a control input 34 of the semiconductor switch 30.
  • the DC-DC converter is connected to the control input 34 (gate) of the semiconductor switch.
  • the semiconductor switch 30 operates as a circuit breaker within the electrical system 60.
  • the semiconductor switch 30 is a circuit breaker, which is designed in particular for a nominal operating current (drain-source) of more than 50 A, 200 A or 500 A.
  • the voltage source 40 is arranged on the gear 34 Steuerein ⁇ the semiconductor switch 30 in a conductive state (Drain-source path conductive) to put when the
  • Voltage potential of the ground terminal 20 is above that of the plus ⁇ pole terminal 22.
  • the voltage source is equipped with a voltage as mentioned wall ⁇ ler 42nd This has an input 44, which is connected downstream of the supply connection.
  • the input 44 and the supply terminal 45 is connected to the ground terminal 20 and the positive pole terminal 22 is connected (directly or indi rectly ⁇ ).
  • the output 46 of the voltage converter 42 is connected to the control input 34 of the semiconductor switch 30.
  • the voltage converter has an input-side drive circuit 48, which conducts current when the voltage potential of the ground terminal 20 is above that of the positive terminal 22, ie when the Verpolungsfall occurs or occurs ⁇ occurs. Otherwise, the drive circuit 48 blocks a current flow to the voltage converter 42. In this way, the drive circuit controls the operation of the polarity reversal protection circuit, so that in the case of reverse polarity, the voltage source 40 is supplied and the semiconductor switch 30 is transferred or holds in a conductive state.
  • the voltage source may comprise a control input via which the polarity reversal is detected, to the power source 40 to control ⁇ .
  • the drive circuit may have a diode whose forward direction points to the voltage source 40.
  • the drive circuit 40 may comprise a coupled MOSFET, in particular a p-channel MOSFE.
  • the drive circuit 40 may have a flip-flop that changes the switching state (permanent, but resettable) when the reverse polarity event occurs.
  • the drive circuit 48 is shown in more detail in the upper left corner and includes a feedforward path including a delay element (RC element or the like).
  • the supply input 45 of the voltage source 40 is connected to the potential of the ground terminal 20 and the potential of the positive pole terminal 22.
  • the output 47 of the voltage source 40 is connected to the control input 34 and a further terminal 36 of the semiconductor switch 30.
  • the voltage source 40 has between the supply input 45 and the output 47 to a galvanic isolation.
  • the separating member comprises two magnetically coupled Wick ⁇ lungs, the source with the different sides of the voltage (40 that is connected to the input 45 and the output 47th
  • the inverse diode 32 of the semiconductor switch 30 has (herstel ⁇ lung-related) to a forward direction which is directed to Pluspolan- circuit 22nd
  • the motor vehicle electrical system 60 of FIG. 1 is connected to the polarity reversal protection circuit 10 described above.
  • a load 70 is connected in series with the semiconductor switch 30.
  • the resulting series circuit of load 70 and semiconductor switch 30 is connected between the ground terminal 20 and the positive terminal 22.
  • the load 70 is a component which conducts in the case of reverse polarity, in particular a (further) circuit breaker of a synchronous rectifier (not shown completely).
  • the power switch, which is the load 70 has an inverse diode 74 that is in parallel with the switching portion 72 (ie, source, drain, and the intermediate channel region) of the power switch 70.
  • the inverse diode results in the production of the substrate of the circuit breaker (ie the load 70) and is in some modes no load that plays a role in the operation of the circuit breaker.
  • the switching portion 72 ie, source, drain, and the intermediate channel region
  • the load 70 is a Transis ⁇ tor, in particular a MOSFET.
  • an electronic load switch 72 of the region of the transistor is referred to, controlled by the egg ⁇ NEN control input power leads, such as the above-mentioned section 72, that is, source, drain, and Between the seats ⁇ rule lying channel region.
  • the inverse diode 74 has a higher ⁇ high high-current strength than the inverse diode 32, in particular due to a better heat dissipation.
  • the illustrated load 70 may be provided a diode, such as a rectifier, wherein the diode as shown
  • Diode 74 is aligned and connected, with no electronic ⁇ nischer load switch 72 is connected in parallel.
  • the load 70 is designed as a (passive or as shown) controlled rectifier or as an inverter, or as part of a rectifier or inverter.
  • the illustrated load 70 has a semiconductor switch 72 (drain, source and the intermediate channel region) with an inverse diode 74, which is located in particular in the same substrate as the semiconductor switch.
  • the substrate of the semiconductor switch 72 of the load is connected via a thermal resistor with a heat sink ⁇ sink (not shown), which is smaller than a thermal resistance, which connects the substrate of the semiconductor switch 30 of the polarity reversal protection circuit 10 with a heat sink.
  • heating of the inverse diode 74 is less critical (in terms of damage to the respective semiconductor) as a heating of the inverse diode 32, wherein the results He ⁇ overheating by current flow through these diodes.
  • the rectifying diode in a passive rectifier as a load with a higher heat load to be allowed from ⁇ as the inverse diode 32.
  • the higher HEAT- ⁇ carrying capacity is obtained by a smaller heat resistance to a heat sink and / or from a higher operating temperature.
  • the inverse diode 74 of the semiconductor switch the load 70 has a forward direction to the positive pole terminal court ⁇ tet.
  • the transmission directions mentioned here are in reversed direction, if the circuit 10 is constructed to be complementary.
  • the voltage source 10 can be constructed as a flyback converter which, in addition to a chopper circuit (which is supplied via the input 45 or 44), has a (magnetic) transformer which galvanically isolates the input 45 from the output 47.

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  • Semiconductor Integrated Circuits (AREA)
  • Electric Propulsion And Braking For Vehicles (AREA)
  • Dc-Dc Converters (AREA)

Abstract

L'invention concerne un circuit de protection contre les inversions de polarité (10) pour un réseau de bord de véhicule à moteur. Ledit circuit de protection contre les inversions de polarité (10) comporte une borne de connexion à la masse (20), une borne de connexion au pôle positif (22) et un commutateur à semi-conducteur (30). Le commutateur à semi-conducteur (30) est pourvu d'une diode d'inversion (32) et est connecté en série à la borne de connexion au pôle positif (22) ou à la borne de connexion à la masse (20). Ledit circuit de protection contre les inversions de polarité (10) comporte en outre une source de tension (40) qui est connectée à une entrée de commande (34) du commutateur à semi-conducteur (30). La source de tension (40) est conçue pour faire passer le commutateur à semi-conducteur (30) dans un état conducteur, par l'intermédiaire de l'entrée de commande (34), lorsque le potentiel de tension de la borne de connexion à la masse (20) est supérieur à celui de la borne de connexion au pôle positif (22). La présente invention concerne en outre un réseau de bord (60) de véhicule à moteur pourvu d'un tel circuit de protection contre les inversions de polarité (10).
PCT/EP2015/070914 2014-09-16 2015-09-14 Circuit de protection contre les inversions de polarité pour un réseau de bord de véhicule à moteur et réseau de bord de véhicule à moteur WO2016041884A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014218551.3A DE102014218551B4 (de) 2014-09-16 2014-09-16 Verpolschutzschaltung für ein Kraftfahrzeug-Bordnetz und Kraftfahrzeug-Bordnetz
DE102014218551.3 2014-09-16

Publications (1)

Publication Number Publication Date
WO2016041884A1 true WO2016041884A1 (fr) 2016-03-24

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PCT/EP2015/070914 WO2016041884A1 (fr) 2014-09-16 2015-09-14 Circuit de protection contre les inversions de polarité pour un réseau de bord de véhicule à moteur et réseau de bord de véhicule à moteur

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DE (1) DE102014218551B4 (fr)
WO (1) WO2016041884A1 (fr)

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CN105811391A (zh) * 2016-05-12 2016-07-27 石河子开发区巨盛丰科技有限公司 相序调整装置、电机、电动阀和自动过滤器

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DE102017219551A1 (de) * 2017-11-03 2019-05-09 Continental Teves Ag & Co. Ohg Verpolschutzanordnung, Verfahren zum Betrieb der Verpolschutzanordnung und korrespondierende Verwendung
EP3626543B1 (fr) * 2018-09-18 2024-03-20 KNORR-BREMSE Systeme für Nutzfahrzeuge GmbH Circuit de protection et procédé pour protéger une alimentation électrique d'un véhicule
DE102022212310A1 (de) 2022-11-18 2024-03-21 Vitesco Technologies Germany Gmbh Kombinierte Transformatoranordnung und Gleichspannungswandler mit einer Transformatoranordnung

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DE3835662A1 (de) * 1988-10-20 1990-04-26 Daimler Benz Ag Vorrichtung zur ansteuerung induktiver verbraucher in einem kraftfahrzeug
DE4137452A1 (de) * 1991-11-14 1993-05-19 Bosch Gmbh Robert Verpolschutzanordnung fuer leistungsendstufen-feldeffekt-transistoren
US6426857B1 (en) * 1998-10-05 2002-07-30 Robert Bosch Gmbh Protective circuit for a power field-effect transistor
US20140091384A1 (en) * 2012-09-29 2014-04-03 Infineon Technologies Ag Reverse Polarity Protection for n-Substrate High-Side Switches

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