WO2016037427A1 - 阵列基板和具有该阵列基板的电容式内嵌触摸屏 - Google Patents

阵列基板和具有该阵列基板的电容式内嵌触摸屏 Download PDF

Info

Publication number
WO2016037427A1
WO2016037427A1 PCT/CN2014/093350 CN2014093350W WO2016037427A1 WO 2016037427 A1 WO2016037427 A1 WO 2016037427A1 CN 2014093350 W CN2014093350 W CN 2014093350W WO 2016037427 A1 WO2016037427 A1 WO 2016037427A1
Authority
WO
WIPO (PCT)
Prior art keywords
touch
electrode
array substrate
touch driving
metal wiring
Prior art date
Application number
PCT/CN2014/093350
Other languages
English (en)
French (fr)
Inventor
谢振宇
Original Assignee
京东方科技集团股份有限公司
北京京东方光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司, 北京京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US14/771,522 priority Critical patent/US9886122B2/en
Publication of WO2016037427A1 publication Critical patent/WO2016037427A1/zh

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134336—Matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04166—Details of scanning methods, e.g. sampling time, grouping of sub areas or time sharing with display driving
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to an array substrate and a capacitive in-cell touch panel having the array substrate.
  • Capacitive in-cell touch In Cell Touch
  • ITO indium tin oxide
  • the sensing electrode Rx is controlled to form an induced capacitance at the intersection of the opposite faces of the two ITO electrodes.
  • the working process of the capacitive in-cell touch screen is: when the touch scan signal is loaded on the touch driving electrode Tx, the voltage signal that the touch sensing electrode Rx is coupled through the sensing capacitor is detected; in the process, if the human body touches the touch screen, the human body The electric field acts on the sensing capacitor to change the capacitance value of the sensing capacitor, thereby changing the voltage signal coupled by the touch sensing electrode Rx; the position of the contact can be determined according to the change of the voltage signal.
  • FIG. 1 is a schematic structural diagram of an ADS type capacitive in-cell touch panel including an array substrate color film (CF) substrate 100, an array (TFT) substrate 200, and a prior art.
  • the liquid crystal layer 300 between the color filter substrate 100 and the array substrate 200 includes a base substrate 101, a CF functional layer 102, and a touch sensing electrode 103.
  • the array substrate 200 includes a base substrate 201 and a TFT functional layer 202.
  • the common electrode layer 203 is divided into a plurality of touch driving electrodes 2031 and a plurality of common electrodes 2032, and the touch driving electrodes 2031 are driven by time sharing to realize display and touch functions.
  • Time-division driving can reduce mutual interference between display and touch, thereby improving picture quality and touch accuracy.
  • the common electrode is multiplexed into a touch driving electrode
  • the common electrode is usually a transparent metal oxide electrode, such as ITO or IZO (indium zinc oxide), and a transparent metal.
  • the resistance value of the oxide electrode is usually large, which causes a delay in the signal in the touch driving electrode.
  • the present disclosure provides an array substrate and a capacitive in-cell touch panel having the array substrate for reducing signal delay of the touch driving electrodes.
  • the present disclosure provides an array substrate, including: a common electrode layer, the common electrode layer is divided into a plurality of touch driving electrodes and a plurality of common electrodes, and the touch driving electrodes are used.
  • the common electrode signal and the touch scan signal are loaded in a time-sharing manner, wherein each of the touch driving electrodes includes: a plurality of sub-touch driving electrodes spaced along the extending direction of the touch driving electrodes, and is used for connecting phases The metal wiring of the adjacent sub-touch drive electrodes.
  • the metal wiring and the sub touch driving electrode are located in different layers and are connected in parallel with the sub touch driving electrode.
  • the metal wiring is located in the common electrode layer and is connected in series with the sub touch driving electrode.
  • the metal wiring overlaps with the touch sensing electrode, and when the touch driving electrode extends in the row direction, the width of the metal wiring in the column direction is smaller than the sub touch.
  • the width of the driving electrode in the column direction, when the touch driving electrode extends in the column direction, the width of the metal wiring in the row direction is smaller than the width of the sub touch driving driving electrode in the row direction.
  • the overlapping area of the metal wiring and the touch sensing electrode is in a range of 2 to 3 square micrometers.
  • the metal wiring is located in a corresponding area of the gate line or the data line.
  • the metal wiring is made of aluminum or copper.
  • the structure of the common electrode is the same as the structure of the touch driving electrode.
  • the common electrode is a strip-shaped electrode.
  • the present disclosure also provides an in-cell touch panel including the above array substrate.
  • the in-cell touch panel is of the ADS type.
  • the in-cell touch panel further includes a color film substrate, wherein the color film substrate comprises a touch sensing electrode and a plurality of pixel units.
  • the touch sensing electrode is located in a non-opening area of the pixel unit.
  • the touch sensing electrode is made of a metal material.
  • the resistance of the touch driving electrodes can be effectively reduced, thereby reducing signal delay in the touch driving electrodes, and improving Touch performance of the in-cell touch screen of the array substrate.
  • FIG. 1 is a schematic structural view of an ADS type capacitive in-cell touch panel in the prior art
  • FIG. 2 is a schematic structural view of a common electrode layer in an array substrate according to Embodiment 1 of the present disclosure
  • FIG. 3 is a schematic structural diagram of a common electrode layer in an array substrate according to Embodiment 2 of the present disclosure
  • FIG. 4 is a schematic diagram of a connection manner of a metal wiring and a sub-touch driving electrode according to an embodiment of the present disclosure
  • FIG. 5 is a schematic plan view showing a metal wiring of an embodiment of the present disclosure.
  • FIG. 6 is a schematic diagram of still another connection manner of a metal wiring and a sub touch driving electrode according to an embodiment of the present disclosure
  • FIG. 7 is a schematic structural diagram of a touch driving electrode and a touch sensing electrode according to an embodiment of the present disclosure
  • FIG. 8 is a cross-sectional structural view of an in-cell touch panel according to an embodiment of the present disclosure.
  • FIG. 9 is another schematic cross-sectional structural view of an in-cell touch panel according to an embodiment of the present disclosure.
  • the array substrate of the embodiment of the present disclosure includes a common electrode layer.
  • FIG. 2 is a schematic structural diagram of a common electrode layer in the array substrate according to the first embodiment of the present disclosure.
  • the common electrode layer is divided into a plurality of spaced apart regions.
  • the touch driving electrode 5031 and the plurality of common electrodes 5032 are used for time-sharing loading of the common electrode signal and the touch scanning signal. Specifically, in the display stage, the touch driving electrode 5031 functions as a common electrode and loads the common electrode signal; during the touch phase, the touch driving electrode 5031 loads the touch scanning signal. Time-division driving can reduce mutual interference between display and touch, and improve picture quality and touch accuracy.
  • each of the touch driving electrodes 5031 includes: a plurality of sub-touch drivers spaced along the extending direction of the touch driving electrodes 5031 in the embodiment of the present disclosure.
  • the touch driving electrode 5031 and the common electrode 5032 both extend in the column direction. Of course, in other embodiments, they may also extend in the row direction.
  • the sub-touch drive electrode 50311 is usually made of a transparent metal oxide such as ITO or IZO, and the metal wiring 50312 is usually made of a low-resistance metal material such as aluminum or copper. Since the plurality of sub-touch driving electrodes 50311 constituting one touch driving electrode 5031 are connected in series through the low-resistance metal wiring 50312, the resistance of the touch driving electrode 5031 can be effectively reduced, so that the touch driving electrode 5031 can be reduced. Signal delay improves the touch performance of the in-cell touch panel including the array substrate.
  • the array substrate of the embodiment of the present disclosure includes a common electrode layer.
  • FIG. 3 is a schematic structural diagram of a common electrode layer in the array substrate according to Embodiment 2 of the present disclosure.
  • the common electrode layer in this embodiment is the same as that in the first embodiment.
  • the common electrode layer is different in that the structure of the common electrode 5032 is the same as that of the touch driving electrode 5031.
  • the common electrode 5032 is a strip-shaped electrode.
  • each of the common electrodes 5032 includes: a plurality of sub-common electrodes 50321 spaced apart along the extending direction of the common electrode 5032, and a metal wiring 50322 for connecting the adjacent sub-common electrodes 50321, wherein The size of the sub-common electrode 50321 is the same as the size of the sub-touch drive electrode 50311.
  • the common electrode 5032 Since the common electrode 5032 has the same structure as the touch driving electrode 5031, the resistance of both is the same. In the display phase, the time at which the common electrode 5032 and the touch driving electrode 5031 transmit signals is also the same, thereby preventing the in-cell touch panel including the array substrate from generating screen flicker and improving display quality.
  • FIG. 4 is a schematic diagram of a connection manner of a metal wiring and a sub-touch driving electrode according to an embodiment of the present disclosure.
  • 501 is a base substrate of an array substrate
  • 502 is a TFT functional layer of the array substrate.
  • the TFT functional layer generally includes a gate electrode, a gate insulating layer, an active layer, and a source/drain electrode.
  • the metal wiring 50312 and the sub-touch driving electrode 50311 are located in different layers, and the metal wiring 50312 is located above the sub-touch driving electrode 50311 and is connected in parallel with the sub-touch driving electrode 50311.
  • the metal wiring 50312 is connected in parallel with the sub touch driving electrode 50311, Therefore, the resistance of the touch driving electrode can be greatly reduced. It should be understood by those skilled in the art that in another embodiment, the metal wiring 50312 may also be located under the sub-touch driving electrode 50311.
  • FIG. 5 is a schematic plan view showing a metal wiring of an embodiment of the present disclosure.
  • the square region 600 is a pixel region defined by the intersection of the gate line and the data line of the array substrate, and the metal wiring 50312 is located at a corresponding region of the gate line and the data line.
  • the metal wiring may also be located only in the corresponding area of the gate line or the corresponding area of the data line.
  • FIG. 6 is a schematic diagram of still another connection manner of a metal wiring and a sub touch driving electrode according to an embodiment of the present disclosure.
  • 501 is a base substrate of the array substrate
  • 502 is a TFT functional layer of the array substrate
  • the TFT functional layer generally includes a gate electrode, a gate insulating layer, an active layer, a source/drain electrode, and the like.
  • the metal wiring 50312 and the sub touch driving driving electrodes 50311 are both located in the common electrode layer, and the metal wiring 50312 is located between the adjacent two sub touch driving electrodes 50311, and the sub The touch driving electrodes 50111 are connected in series.
  • the sensing capacitor C is proportional to the overlapping area S between the touch driving electrode and the touch sensing electrode, and can pass The overlapping area S between the touch driving electrode and the touch sensing electrode is reduced to reduce the sensing capacitance C between the touch driving electrode and the touch sensing electrode.
  • FIG. 7 is a schematic structural diagram of a touch driving electrode and a touch sensing electrode according to an embodiment of the present disclosure.
  • the metal wiring 50312 and the touch sensing electrode 403 are overlapped in position.
  • the touch driving electrode 5031 extends in the column direction. At this time, the width of the metal wiring 50312 in the row direction is smaller than the width of the sub touch driving driving electrode 50311 in the row direction.
  • the touch driving electrode 5031 may also extend in the row direction. At this time, the width of the metal wiring 50312 in the column direction is smaller than the width of the sub touch driving driving electrode 50311 in the column direction.
  • the overlapping area between the touch driving electrode and the touch sensing electrode can be reduced, thereby forming a small sensing capacitance C at the intersection of the touch driving electrode and the touch sensing electrode, and the electric field of the human body acts here.
  • a more pronounced change in the sensing capacitance can increase the sensitivity of the in-cell touch panel including the array substrate.
  • the overlapping area of the metal wiring and the touch sensing electrode is in a range of 2 to 3 square micrometers.
  • the embodiment of the present disclosure further provides an in-cell touch panel, including an array substrate, which may be the array substrate in any of the above embodiments.
  • the in-cell touch panel further includes a color film substrate, and the color film substrate includes a touch sensing electrode and a plurality of pixel units.
  • the in-cell touch panel can be an ADS-type in-cell touch panel, that is, the touch sensing electrodes are located on the color film substrate, and the color film substrate includes a plurality of pixel units.
  • the touch sensing electrode is located in a non-opening area of the pixel unit.
  • the non-opening area is generally provided with a black matrix, and generally the black matrix is disposed corresponding to the gate line or the data line.
  • the metal wiring is also disposed corresponding to the non-opening region.
  • the touch sensing electrode can be made of a metal material to reduce the resistance of the touch sensing electrode and improve the transmission speed of the signal in the touch sensing electrode.
  • FIG. 8 is a cross-sectional structural diagram of an in-cell touch panel according to an embodiment of the present disclosure.
  • the in-cell touch panel includes a color filter substrate 400 , an array substrate 500 , and a liquid crystal layer 300 between the color filter substrate 400 and the array substrate 500 .
  • the color filter substrate 400 includes a base substrate 401, a CF functional layer 402, and a touch sensing electrode 403.
  • the array substrate 500 includes a base substrate 501, a TFT functional layer 502, and a common electrode layer 503.
  • the common electrode layer 503 is divided into a plurality of touch driving electrodes 5031 and a plurality of common electrodes (not shown) which are disposed at intervals.
  • the touch driving electrode 5031 includes a plurality of sub touch driving electrodes 50311 spaced along the extending direction of the touch driving electrodes 5031, and metal wirings for connecting the adjacent sub touch driving electrodes 50311. 50312.
  • the metal wiring 50312 and the sub touch driving electrodes 50311 are both located in the common electrode layer 503, and the metal wiring 50312 is connected in series with the sub touch driving electrode 50111.
  • FIG. 9 is another schematic cross-sectional structural view of an in-cell touch panel according to an embodiment of the present disclosure.
  • the in-cell touch panel includes a color filter substrate 400, an array substrate 500, and a liquid crystal layer 300 between the color filter substrate 400 and the array substrate 500.
  • the color filter substrate 400 includes a base substrate 401, a CF functional layer 402, and a touch sensing electrode 403.
  • the array substrate 500 includes a base substrate 501, a TFT functional layer 502, and a common electrode layer 503.
  • the common electrode layer 503 is divided into a plurality of touch driving electrodes 5031 and a plurality of common electrodes (not shown) which are disposed at intervals.
  • the touch driving electrode 5031 includes a plurality of sub touch driving electrodes 50311 spaced along the extending direction of the touch driving electrode 5031. And a metal wiring 50312 for connecting the adjacent sub touch driving electrodes 50311.
  • the metal wiring 50312 is located above the sub touch driving electrode 50311 and is connected in parallel with the sub touch driving electrode 50111.

Abstract

本公开提供一种阵列基板和具有该阵列基板的电容式内嵌触摸屏，该阵列基板包括公共电极层，所述公共电极层被分割成间隔设置的多个触控驱动电极和多个公共电极，所述触控驱动电极用于分时加载公共电极信号和触控扫描信号，每一所述触控驱动电极包括：沿所述触控驱动电极的延伸方向间隔设置的多个子触控驱动电极，以及用于连接相邻的所述子触控驱动电极的金属配线。

Description

阵列基板和具有该阵列基板的电容式内嵌触摸屏
相关申请的交叉引用
本申请主张在2014年9月10日在中国提交的中国专利申请号No.201410458393.0的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及显示技术领域，尤其涉及一种阵列基板和具有该阵列基板的电容式内嵌触摸屏。
背景技术
电容式内嵌触摸(In Cell Touch)技术，即在液晶面板中制作两层相互异面相交的条状ITO(氧化铟锡)电极，这两层电极分别作为触摸屏的触控驱动电极Tx和触控感应电极Rx，在两条ITO电极的异面相交处形成感应电容。电容式内嵌触摸屏工作过程为：在对触控驱动电极Tx加载触控扫描信号时，检测触控感应电极Rx通过感应电容耦合出的电压信号；在此过程中，如果有人体接触触摸屏，人体电场就会作用在感应电容上，使感应电容的电容值发生变化，进而改变触控感应电极Rx耦合出的电压信号；根据电压信号的变化，就可以确定触点位置。
目前已有厂家将电容式内嵌触摸技术应用于ADS(Advanced Super Dimension Switch，高级超维场开关)型的液晶面板上。请参考图1，图1为现有技术中的ADS型的电容式内嵌触摸屏的结构示意图，该电容式内嵌触摸屏包括阵列基板彩膜(CF)基板100、阵列(TFT)基板200以及位于彩膜基板100和阵列基板200之间的液晶层300，彩膜基板100包括：衬底基板101、CF功能层102及触控感应电极103，阵列基板200包括衬底基板201、TFT功能层202及公共电极层203，公共电极层203被分割成间隔设置的多个触控驱动电极2031和多个公共电极2032，对触控驱动电极2031采取分时驱动，以实现显示和触控功能。分时驱动能够降低显示和触控的相互干扰，进而提高画面品质和触控准确性。
在上述内嵌式触摸屏中，由于将公共电极复用为触控驱动电极，而公共电极通常为透明金属氧化物电极，如ITO或IZO(氧化铟锌)等，透明金属 氧化物电极的电阻值通常比较大，从而会造成触控驱动电极中的信号产生延迟。
发明内容
有鉴于此，本公开提供一种阵列基板和具有该阵列基板的电容式内嵌触摸屏，用以减小触控驱动电极的信号延迟。
为解决上述技术问题，本公开提供一种阵列基板，包括：公共电极层，所述公共电极层被分割成间隔设置的多个触控驱动电极和多个公共电极，所述触控驱动电极用于分时加载公共电极信号和触控扫描信号，其中，每一所述触控驱动电极包括：沿所述触控驱动电极的延伸方向间隔设置的多个子触控驱动电极，以及用于连接相邻的所述子触控驱动电极的金属配线。
可选地，所述金属配线与所述子触控驱动电极位于不同层，且与所述子触控驱动电极并联。
可选地，所述金属配线位于所述公共电极层，与所述子触控驱动电极串联。
可选地，所述金属配线与触控感应电极位置交叠，且，当所述触控驱动电极沿行方向延伸时，所述金属配线在列方向上的宽度小于所述子触控驱动电极在列方向上的宽度，当所述触控驱动电极沿列方向延伸时，所述金属配线在行方向上的宽度小于所述子触控驱动电极在行方向上的宽度。
可选地，所述金属配线与触控感应电极的交叠面积位于2～3平方微米范围内。
可选地，所述金属配线位于栅线或数据线对应区域。
可选地，所述金属配线采用铝或铜制成。
可选地，所述公共电极的结构与触控驱动电极的结构相同。
可选地，所述公共电极为整条状的电极。
本公开还提供一种内嵌式触控屏，包括上述阵列基板。
可选地，所述内嵌式触摸屏为ADS型。
可选地，所述内嵌式触控屏还包括彩膜基板，所述彩膜基板包括触控感应电极及多个像素单元。
可选地，所述触控感应电极位于所述像素单元的非开口区域。
可选地，所述触控感应电极采用金属材料制成。
本公开的上述技术方案的有益效果如下：
由于组成触控驱动电极的多个子触控驱动电极通过低电阻的金属配线串联起来，因而可有效降低触控驱动电极的电阻，从而可以减小触控驱动电极中的信号延迟，提高包括该阵列基板的内嵌式触摸屏的触摸性能。
附图说明
图1为现有技术中的ADS型的电容式内嵌触摸屏的结构示意图；
图2为本公开实施例一的阵列基板中的公共电极层的结构示意图；
图3为本公开实施例二的阵列基板中的公共电极层的结构示意图；
图4为本公开实施例的金属配线和子触控驱动电极的一连接方式示意图；
图5为本公开实施例的金属配线的平面结构示意图；
图6为本公开实施例的金属配线与子触控驱动电极的又一连接方式示意图；
图7为本公开实施例的触控驱动电极和触控感应电极结构示意图；
图8为本公开实施例的内嵌式触控屏的一剖面结构示意图；
图9为本公开实施例的内嵌式触控屏的另一剖面结构示意图。
具体实施方式
为使本公开要解决的技术问题、技术方案和优点更加清楚，下面将结合附图及具体实施例进行详细描述。
实施例一
本公开实施例的阵列基板包括公共电极层，请参考图2，图2为本公开实施例一的阵列基板中的公共电极层的结构示意图，所述公共电极层被分割成间隔设置的多个触控驱动电极5031和多个公共电极5032，所述触控驱动电极5031用于分时加载公共电极信号和触控扫描信号。具体地，在显示阶段，触控驱动电极5031作为公共电极，加载公共电极信号；在触控阶段，触控驱动电极5031加载触控扫描信号。分时驱动能够降低显示和触控的相互干扰，提高画面品质和触控准确性。
为减小触控驱动电极的电阻，本公开实施例中，每一所述触控驱动电极5031包括：沿所述触控驱动电极5031的延伸方向间隔设置的多个子触控驱 动电极50311，以及用于连接相邻的所述子触控驱动电极50311的金属配线50312。
本实施例中，触控驱动电极5031和公共电极5032均沿列方向延伸，当然，在其他实施例中，也可沿行方向延伸。
所述子触控驱动电极50311通常采用ITO或IZO等透明金属氧化物制成，所述金属配线50312通常采用铝或铜等低电阻金属材料制成。由于组成一个触控驱动电极5031的多个子触控驱动电极50311通过低电阻的金属配线50312串联起来，因而可有效降低触控驱动电极5031的电阻，从而可以减小触控驱动电极5031中的信号延迟，提高包括该阵列基板的内嵌式触摸屏的触摸性能。
实施例二
本公开实施例的阵列基板包括公共电极层，请参考图3，图3为本公开实施例二的阵列基板中的公共电极层的结构示意图，该实施例中的公共电极层与实施例一中的公共电极层的区别在于：公共电极5032的结构与触控驱动电极5031的结构相同，而实施例一中，公共电极5032为整条状的电极。
本实施例中，每一公共电极5032包括：沿所述公共电极5032的延伸方向间隔设置的多个子公共电极50321，以及用于连接相邻的所述子公共电极50321的金属配线50322，其中，子公共电极50321的尺寸与子触控驱动电极50311的尺寸相同。
由于公共电极5032与触控驱动电极5031的结构相同，因而两者的电阻也相同。在显示阶段，公共电极5032与触控驱动电极5031的传输信号的时间也相同，从而可避免包含该阵列基板的内嵌式触摸屏产生画面闪烁，提高显示品质。
图4为本公开实施例的金属配线和子触控驱动电极的一连接方式示意图。在图4中，501为阵列基板的衬底基板，502为阵列基板的TFT功能层，其中，TFT功能层通常包括：栅电极、栅绝缘层、有源层和源漏电极等。本实施例中，金属配线50312与子触控驱动电极50311位于不同层，且所述金属配线50312位于所述子触控驱动电极50311之上，与所述子触控驱动电极50311并联。本实施例中，由于金属配线50312与子触控驱动电极50311并联， 因此可大幅减低触控驱动电极的电阻。本领域人员应当理解的是，在另一个实施例中，所述金属配线50312也可以位于所述子触控驱动电极50311之下。
图5为本公开实施例的金属配线的平面结构示意图。在图5中，方块区域600为阵列基板的栅线和数据线交叉限定的像素区域，金属配线50312位于栅线和数据线对应区域。
当然，在本公开的其他实施例中，所述金属配线也可以仅位于栅线对应区域或数据线对应区域。
图6为本公开实施例的金属配线与子触控驱动电极的又一连接方式示意图。在图6中，501为阵列基板的衬底基板，502为阵列基板的TFT功能层，TFT功能层通常包括：栅电极、栅绝缘层、有源层和源漏电极等。本实施例中，所述金属配线50312与所述子触控驱动电极50311均位于公共电极层，所述金属配线50312位于相邻的两子触控驱动电极50311之间，与所述子触控驱动电极50311串联。
根据触控驱动电极与触控感应电极之间的感应电容C＝εS/d的计算公式可知，感应电容C与触控驱动电极和触控感应电极之间的交叠面积S成正比，可以通过减小触控驱动电极和触控感应电极之间的交叠面积S，来减小触控驱动电极与触控感应电极之间的感应电容C。
图7为本公开实施例的触控驱动电极和触控感应电极结构示意图。在本公开实施例中，如图7所示，所述金属配线50312与触控感应电极403位置交叠。在本公开实施例中，所述触控驱动电极5031沿列方向延伸，此时，所述金属配线50312在行方向上的宽度小于所述子触控驱动电极50311在行方向上的宽度。
当然，所述触控驱动电极5031也可以沿行方向延伸，此时，所述金属配线50312在列方向上的宽度小于所述子触控驱动电极50311在列方向上的宽度。
通过上述方案，可以减小触控驱动电极和触控感应电极之间的交叠面积，从而在触控驱动电极和触控感应电极交叠处形成较小的感应电容C，人体电场作用在此感应电容上就会产生更明显的变化，从而可以提高包含该阵列基板的内嵌式触摸屏的灵敏度。
可选地，所述金属配线与触控感应电极的交叠面积位于2～3平方微米范围内。
本公开实施例还提供一种内嵌式触控屏，包括阵列基板，所述阵列基板可以为上述任一实施例中的阵列基板。所述内嵌式触控屏还包括彩膜基板，所述彩膜基板包括触控感应电极及多个像素单元。所述内嵌式触摸屏可以为ADS型的内嵌式触摸屏，即触控感应电极位于彩膜基板上，彩膜基板包括多个像素单元。
可选地，所述触控感应电极位于所述像素单元的非开口区域。所述非开口区域一般设置有黑矩阵，通常黑矩阵与栅线或数据线对应设置。同时，可选地，所述金属配线也对应于所述非开口区域设置。
可选地，所述触控感应电极可以采用金属材料制成，以降低触控感应电极的电阻，提高触控感应电极中信号的传输速度。
图8为本公开实施例的内嵌式触控屏的一剖面结构示意图。在图8中，该内嵌式触摸屏包括：彩膜基板400、阵列基板500及位于彩膜基板400和阵列基板500之间的液晶层300。彩膜基板400包括：衬底基板401、CF功能层402及触摸感应电极403。阵列基板500包括：衬底基板501、TFT功能层502及公共电极层503。公共电极层503被分割成间隔设置的多个触控驱动电极5031和多个公共电极(未示出)。其中，触控驱动电极5031包括：沿所述触控驱动电极5031的延伸方向间隔设置的多个子触控驱动电极50311，以及用于连接相邻的所述子触控驱动电极50311的金属配线50312。金属配线50312与子触控驱动电极50311均位于公共电极层503，金属配线50312与子触控驱动电极50311串联。
图9为本公开实施例的内嵌式触控屏的另一剖面结构示意图。在图9中该内嵌式触摸屏包括：彩膜基板400、阵列基板500及位于彩膜基板400和阵列基板500之间的液晶层300。彩膜基板400包括：衬底基板401、CF功能层402及触摸感应电极403。阵列基板500包括：衬底基板501、TFT功能层502及公共电极层503。公共电极层503被分割成间隔设置的多个触控驱动电极5031和多个公共电极(图未示出)。其中，触控驱动电极5031包括：沿所述触控驱动电极5031的延伸方向间隔设置的多个子触控驱动电极50311， 以及用于连接相邻的所述子触控驱动电极50311的金属配线50312。金属配线50312位于子触控驱动电极50311之上，与子触控驱动电极50311并联。
另外，本领域人员应当理解的是，在各个附图中，子触控驱动电极和金属配线之间的尺寸和薄厚的比例关系仅为示意，本公开并不限于图中所示的具体的比例关系。
以上所述是本公开的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本公开所述原理的前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本公开的保护范围。

Claims (14)

  1. 一种阵列基板，包括公共电极层，所述公共电极层被分割成间隔设置的多个触控驱动电极和多个公共电极，所述触控驱动电极用于分时加载公共电极信号和触控扫描信号，其中，每一所述触控驱动电极包括：沿所述触控驱动电极的延伸方向间隔设置的多个子触控驱动电极，以及用于连接相邻的所述子触控驱动电极的金属配线。
  2. 根据权利要求1所述的阵列基板，其中，所述金属配线与所述子触控驱动电极位于不同层，且与所述子触控驱动电极并联。
  3. 根据权利要求1所述的阵列基板，其中，所述金属配线位于所述公共电极层，与所述子触控驱动电极串联。
  4. 根据权利要求1所述的阵列基板，其中，所述金属配线与触控感应电极位置交叠，且，当所述触控驱动电极沿行方向延伸时，所述金属配线在列方向上的宽度小于所述子触控驱动电极在列方向上的宽度，当所述触控驱动电极沿列方向延伸时，所述金属配线在行方向上的宽度小于所述子触控驱动电极在行方向上的宽度。
  5. 根据权利要求4所述的阵列基板，其中，所述金属配线与触控感应电极的交叠面积位于2～3平方微米范围内。
  6. 根据权利要求1所述的阵列基板，其中，所述金属配线位于栅线或数据线对应区域。
  7. 根据权利要求1-6任一项所述的阵列基板，其中，所述金属配线采用铝或铜制成。
  8. 根据权利要求1-7任一项所述的阵列基板，其中，所述公共电极的结构与触控驱动电极的结构相同。
  9. 根据权利要求1-8任一项所述的阵列基板，其中，所述公共电极为整条状的电极。
  10. 一种内嵌式触控屏，包括权利要求1-9任一项所述的阵列基板。
  11. 根据权利要求10所述的内嵌式触控屏，其中，所述内嵌式触摸屏为ADS型。
  12. 根据权利要求10所述的内嵌式触控屏，还包括彩膜基板，述彩膜基板包括触控感应电极及多个像素单元。
  13. 根据权利要求12所述的内嵌式触控屏，其中，所述触控感应电极位于所述像素单元的非开口区域。
  14. 根据权利要求12所述的内嵌式触控屏，其中，所述触控感应电极采用金属材料制成。
PCT/CN2014/093350 2014-09-10 2014-12-09 阵列基板和具有该阵列基板的电容式内嵌触摸屏 WO2016037427A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/771,522 US9886122B2 (en) 2014-09-10 2014-12-09 Array substrate, and capacitive in-cell touch panel with the array substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410458393.0 2014-09-10
CN201410458393.0A CN104238854B (zh) 2014-09-10 2014-09-10 一种阵列基板和具有该阵列基板的电容式内嵌触摸屏

Publications (1)

Publication Number Publication Date
WO2016037427A1 true WO2016037427A1 (zh) 2016-03-17

Family

ID=52227055

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2014/093350 WO2016037427A1 (zh) 2014-09-10 2014-12-09 阵列基板和具有该阵列基板的电容式内嵌触摸屏

Country Status (3)

Country Link
US (1) US9886122B2 (zh)
CN (1) CN104238854B (zh)
WO (1) WO2016037427A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104503647B (zh) 2014-12-31 2017-12-08 京东方科技集团股份有限公司 一种触摸显示屏的基板及其制造方法、触摸屏及显示装置
CN104808375B (zh) * 2015-05-08 2018-12-07 厦门天马微电子有限公司 一种显示面板、显示装置和制作方法
CN107797321B (zh) * 2015-05-08 2020-09-08 厦门天马微电子有限公司 阵列基板、液晶显示面板和液晶显示装置
CN104881170B (zh) * 2015-05-08 2017-12-26 厦门天马微电子有限公司 一种阵列基板、显示面板、显示装置及制作方法
CN105045453B (zh) * 2015-08-20 2018-04-10 京东方科技集团股份有限公司 一种内嵌式触摸屏及显示装置
CN105487720B (zh) * 2016-01-29 2018-10-26 上海中航光电子有限公司 阵列基板及其制作方法、包含其的触摸显示装置
JP2019067156A (ja) * 2017-09-29 2019-04-25 株式会社ジャパンディスプレイ 検出装置及び表示装置
JP2019067157A (ja) * 2017-09-29 2019-04-25 株式会社ジャパンディスプレイ 検出装置及び表示装置
CN111124177B (zh) * 2019-12-13 2023-10-31 武汉华星光电技术有限公司 内嵌式触控显示面板

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102841718A (zh) * 2012-08-31 2012-12-26 北京京东方光电科技有限公司 一种电容式内嵌触摸屏及显示装置
CN103838430A (zh) * 2014-02-24 2014-06-04 北京京东方光电科技有限公司 一种内嵌式触摸屏及显示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8804056B2 (en) * 2010-12-22 2014-08-12 Apple Inc. Integrated touch screens
CN202711227U (zh) * 2012-08-21 2013-01-30 北京京东方光电科技有限公司 一种电容式内嵌触摸屏及显示装置
CN102914920B (zh) 2012-09-11 2015-05-20 北京京东方光电科技有限公司 一种电容式内嵌触摸屏、其驱动方法及显示装置
CN102955636B (zh) * 2012-10-26 2015-09-09 北京京东方光电科技有限公司 一种电容式内嵌触摸屏及显示装置
CN102945106B (zh) * 2012-10-31 2016-02-03 北京京东方光电科技有限公司 一种电容式内嵌触摸屏及显示装置
KR102024782B1 (ko) * 2012-12-27 2019-09-24 엘지디스플레이 주식회사 터치센서 일체형 표시장치
TWI492115B (zh) * 2013-03-04 2015-07-11 Novatek Microelectronics Corp 內嵌式觸控面板

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102841718A (zh) * 2012-08-31 2012-12-26 北京京东方光电科技有限公司 一种电容式内嵌触摸屏及显示装置
CN103838430A (zh) * 2014-02-24 2014-06-04 北京京东方光电科技有限公司 一种内嵌式触摸屏及显示装置

Also Published As

Publication number Publication date
CN104238854B (zh) 2018-01-02
US20160370914A1 (en) 2016-12-22
CN104238854A (zh) 2014-12-24
US9886122B2 (en) 2018-02-06

Similar Documents

Publication Publication Date Title
WO2016037427A1 (zh) 阵列基板和具有该阵列基板的电容式内嵌触摸屏
US10613664B2 (en) Display device with built-in touch screen and method of fabricating the same
US10345978B2 (en) In-cell touch display panel
US9715320B2 (en) In-cell touch display panel
US9851832B2 (en) Display panel, driving method thereof and display device
US9665203B2 (en) Capacitive in-cell touch panel and display device
EP2985677B1 (en) In-cell touch screen and display device
TWI569182B (zh) 內嵌式觸控面板及其佈局
TWI492115B (zh) 內嵌式觸控面板
TWI534667B (zh) 觸控顯示面板、觸控顯示裝置及其驅動方法
JP5841630B2 (ja) タッチディスプレイパネルおよびその駆動方法
TWI594156B (zh) 內嵌式觸控面板及其佈局
WO2017041431A1 (zh) 一种内嵌式触摸屏及显示装置
WO2014169538A1 (zh) 内嵌式触摸屏及显示装置
EP3118727B1 (en) In-cell touchscreen and display device
CN103823601A (zh) 一种内嵌式触摸屏及显示装置
KR20150011583A (ko) 표시장치
US9563095B2 (en) Pixel structure and manufacturing method therefor, array structure, display panel and display device
WO2017045222A1 (zh) 一种触摸面板、阵列基板及其制造方法
US20170160836A1 (en) Touch screen panel-integrated display device and method for fabricating the same
US20160062502A1 (en) Touch display device, driving method thereof and manufacturing method thereof
WO2016004720A1 (zh) 触控基板及显示装置
US10775659B2 (en) Array substrate, display device and driving method thereof
JP2017026816A5 (zh)
US20170147122A1 (en) Capacitive Touch Substrate and Touch Display Screen

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 14771522

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14901786

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 07.09.2017)

122 Ep: pct application non-entry in european phase

Ref document number: 14901786

Country of ref document: EP

Kind code of ref document: A1