CN104238854B - 一种阵列基板和具有该阵列基板的电容式内嵌触摸屏 - Google Patents

一种阵列基板和具有该阵列基板的电容式内嵌触摸屏 Download PDF

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CN104238854B
CN104238854B CN201410458393.0A CN201410458393A CN104238854B CN 104238854 B CN104238854 B CN 104238854B CN 201410458393 A CN201410458393 A CN 201410458393A CN 104238854 B CN104238854 B CN 104238854B
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driving electrodes
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CN104238854A (zh
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谢振宇
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BOE Technology Group Co Ltd
Beijing BOE Optoelectronics Technology Co Ltd
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Beijing BOE Optoelectronics Technology Co Ltd
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Abstract

本发明提供一种阵列基板和具有该阵列基板的电容式内嵌触摸屏，该阵列基板包括公共电极层，所述公共电极层被分割成间隔设置的多个触控驱动电极和多个公共电极，所述触控驱动电极用于分时加载公共电极信号和触控扫描信号，每一所述触控驱动电极包括：沿所述触控驱动电极的延伸方向间隔设置的多个子触控驱动电极，以及用于连接相邻的所述子触控驱动电极的金属配线。采用本发明的方案，可有效降低触控驱动电极的电阻，从而可以减小触控驱动电极中的信号延迟，提高包括该阵列基板的内嵌式触摸屏的触摸性能。

Description

一种阵列基板和具有该阵列基板的电容式内嵌触摸屏
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板和具有该阵列基板的电容式内嵌触摸屏。
背景技术
电容式内嵌触摸(In Cell Touch)技术，即在液晶面板中制作两层相互异面相交的条状ITO(氧化铟锡)电极，这两层电极分别作为触摸屏的触控驱动电极Tx和触控感应电极Rx，在两条ITO电极的异面相交处形成感应电容。电容式内嵌触摸屏工作过程为：在对触控驱动电极Tx加载触控扫描信号时，检测触控感应电极Rx通过感应电容耦合出的电压信号，在此过程中，如果有人体接触触摸屏，人体电场就会作用在感应电容上，使感应电容的电容值发生变化，进而改变触控感应电极Rx耦合出的电压信号，根据电压信号的变化，就可以确定触点位置。
目前已有厂家将电容式内嵌触摸技术应用于ADS(Advanced Super DimensionSwitch，高级超维场开关)型的液晶面板上。请参考图1，图1为现有技术中的ADS型的电容式内嵌触摸屏的结构示意图，该电容式内嵌触摸屏包括阵列基板彩膜(CF)基板100、阵列(TFT)基板200以及位于彩膜基板100和阵列基板200之间的液晶层300，彩膜基板100包括：衬底基板101、CF功能层102及触控感应电极103，阵列基板200包括衬底基板201、TFT功能层202及公共电极层203，公共电极层203被分割成间隔设置的多个触控驱动电极2031和多个公共电极2032，对触控驱动电极2031采取分时驱动，实现显示和触控功能，分时驱动能够降低显示和触控的相互干扰，提高画面品质和触控准确性。
上述内嵌式触摸屏中，由于将公共电极复用为触控驱动电极，而公共电极通常为透明金属氧化物电极，如ITO或IZO(氧化铟锌)等，透明金属氧化物电极的电阻值通常比较大，从而会造成触控驱动电极中的信号产生延迟。
发明内容
有鉴于此，本发明提供一种阵列基板和具有该阵列基板的电容式内嵌触摸屏，用以减小触控驱动电极的信号延迟。
为解决上述技术问题，本发明提供一种阵列基板，包括：公共电极层，所述公共电极层被分割成间隔设置的多个触控驱动电极和多个公共电极，所述触控驱动电极用于分时加载公共电极信号和触控扫描信号，其中，每一所述触控驱动电极包括：沿所述触控驱动电极的延伸方向间隔设置的多个子触控驱动电极，以及用于连接相邻的所述子触控驱动电极的金属配线。
优选地，所述金属配线与所述子触控驱动电极位于不同层，且与所述子触控驱动电极并联。
优选地，所述金属配线位于所述公共电极层，与所述子触控驱动电极串联。
优选地，所述金属配线与触控感应电极位置交叠，且，当所述触控驱动电极沿行方向延伸时，所述金属配线在列方向上的宽度小于所述子触控驱动电极在列方向上的宽度，当所述触控驱动电极沿列方向延伸时，所述金属配线在行方向上的宽度小于所述子触控驱动电极在行方向上的宽度。
优选地，所述金属配线与触控感应电极的交叠面积位于2～3平方微米范围内。
优选地，所述金属配线位于栅线或数据线对应区域。
本发明还提供一种内嵌式触控屏，包括上述阵列基板。
优选地，所述内嵌式触控屏还包括彩膜基板，所述彩膜基板包括触控感应电极及多个像素单元。
优选地，所述触控感应电极位于所述像素单元的非开口区域。
优选地，所述触控感应电极采用金属材料制成。
本发明的上述技术方案的有益效果如下：
由于组成触控驱动电极的多个子触控驱动电极通过低电阻的金属配线串联起来，因而可有效降低触控驱动电极的电阻，从而可以减小触控驱动电极中的信号延迟，提高包括该阵列基板的内嵌式触摸屏的触摸性能。
附图说明
图1为现有技术中的ADS型的电容式内嵌触摸屏的结构示意图；
图2为本发明实施例一的阵列基板中的公共电极层的结构示意图；
图3为本发明实施例二的阵列基板中的公共电极层的结构示意图；
图4为本发明实施例的金属配线和子触控驱动电极的一连接方式示意图；
图5为本发明实施例的金属配线的平面结构示意图；
图6为本发明实施例的金属配线与子触控驱动电极的又一连接方式示意图；
图7为本发明实施例的触控驱动电极和触控感应电极结构示意图；
图8为本发明实施例的内嵌式触控屏的一剖面结构示意图；
图9为本发明实施例的内嵌式触控屏的另一剖面结构示意图。
具体实施方式
为使本发明要解决的技术问题、技术方案和优点更加清楚，下面将结合附图及具体实施例进行详细描述。
实施例一
本发明实施例的阵列基板包括公共电极层，请参考图2，图2为本发明实施例一的阵列基板中的公共电极层的结构示意图，所述公共电极层被分割成间隔设置的多个触控驱动电极5031和多个公共电极5032，所述触控驱动电极5031用于分时加载公共电极信号和触控扫描信号，具体的，在显示阶段，触控驱动电极5031作为公共电极，加载公共电极信号，在触控阶段，触控驱动电极5031加载触控扫描信号，分时驱动能够降低显示和触控的相互干扰，提高画面品质和触控准确性。
为减小触控驱动电极的电阻，本发明实施例中，每一所述触控驱动电极5031包括：沿所述触控驱动电极5031的延伸方向间隔设置的多个子触控驱动电极50311，以及用于连接相邻的所述子触控驱动电极50311的金属配线50312。
本实施例中，触控驱动电极5031和公共电极5032均沿列方向延伸，当然，在其他实施例中，也可沿行方向延伸。
所述子触控驱动电极50311通常采用ITO或IZO等透明金属氧化物制成，所述金属配线50312通常采用铝或铜等低电阻金属材料制成，由于组成一个触控驱动电极5031的多个子触控驱动电极50311通过低电阻的金属配线50312串联起来，因而可有效降低触控驱动电极5031的电阻，从而可以减小触控驱动电极5031中的信号延迟，提高包括该阵列基板的内嵌式触摸屏的触摸性能。
实施例二
本发明实施例的阵列基板包括公共电极层，请参考图3，图3为本发明实施例二的阵列基板中的公共电极层的结构示意图，该实施例中的公共电极层与实施例一中的公共电极层的区别在于：公共电极5032的结构与触控驱动电极5031的结构相同，而实施例一中，公共电极5032为整条状的电极。
本实施例中，每一公共电极5032包括：沿所述公共电极5032的延伸方向间隔设置的多个子公共电极50321，以及用于连接相邻的所述子公共电极50321的金属配线50322，其中，子公共电极50321的尺寸与子触控驱动电极50311的尺寸相同。
由于公共电极5032与触控驱动电极5031的结构相同，因而两者的电阻也相同，在显示阶段，公共电极5032与触控驱动电极5031的传输信号的时间也相同，从而可避免包含该阵列基板的内嵌式触摸屏产生画面闪烁，提高显示品质。
请参考图4，图4为本发明实施例的金属配线和子触控驱动电极的一连接方式示意图，图中，501为阵列基板的衬底基板，502为阵列基板的TFT功能层，TFT功能层通常包括：栅电极、栅绝缘层、有源层和源漏电极等。本实施例中，金属配线50312与子触控驱动电极50311位于不同层，且所述金属配线50312位于所述子触控驱动电极50311之上，与所述子触控驱动电极50311并联。本实施例中，由于金属配线50312与子触控驱动电极50311并联，因此可大幅减低触控驱动电极的电阻。
请参考图5，图5为本发明实施例的金属配线的平面结构示意图，图中方块区域600为阵列基板的栅线和数据线交叉限定的像素区域，金属配线50312位于栅线和数据线对应区域。
当然，在本发明的其他实施例中，所述金属配线也可以仅位于栅线对应区域或数据线对应区域。
请参考图6，图6为本发明实施例的金属配线与子触控驱动电极的又一连接方式示意图，图中，501为阵列基板的衬底基板，502为阵列基板的TFT功能层，TFT功能层通常包括：栅电极、栅绝缘层、有源层和源漏电极等。本实施例中，所述金属配线50312与所述子触控驱动电极50311均位于公共电极层，所述金属配线50312位于相邻的两子触控驱动电极50311之间，与所述子触控驱动电极50311串联。
根据触控驱动电极与触控感应电极之间的感应电容C＝εS/d的计算公式可知，感应电容C与触控驱动电极和触控感应电极之间的交叠面积S成正比，可以通过减小触控驱动电极和触控感应电极之间的交叠面积S，来减小触控驱动电极与触控感应电极之间的感应电容C。
请参考图7，图7为本发明实施例的触控驱动电极和触控感应电极结构示意图，本发明实施例中，所述金属配线50312与触控感应电极403位置交叠，本发明实施例中，所述触控驱动电极5031沿列方向延伸，此时，所述金属配线50312在行方向上的宽度小于所述子触控驱动电极50311在行方向上的宽度。
当然，所述触控驱动电极5031也可以沿行方向延伸，此时，所述金属配线50312在列方向上的宽度小于所述子触控驱动电极50311在列方向上的宽度。
通过上述方案，可以减小触控驱动电极和触控感应电极之间的交叠面积，从而在触控驱动电极和触控感应电极交叠处形成较小的感应电容C，人体电场作用在此感应电容上就会产生明显的变化，从而可以提高包含该阵列基板的内嵌式触摸屏的灵敏度。
优选地，所述金属配线与触控感应电极的交叠面积位于2～3平方微米范围内。
本发明实施例还提供一种内嵌式触控屏，包括阵列基板，所述阵列基板可以为上述任一实施例中的阵列基板。所述内嵌式触控屏还包括彩膜基板,所述彩膜基板包括触控感应电极及多个像素单元。所述内嵌式触摸屏可以为ADS型的内嵌式触摸屏，即触控感应电极位于彩膜基板上，彩膜基板包括及多个像素单元。
优选地，所述触控感应电极位于所述像素单元的非开口区域。所述非开口区域一般设置有黑矩阵，通常黑矩阵与栅线或数据线对应设置，同时，优选地，所述金属配线也对应于所述非开口区域设置。
优选地，所述触控感应电极可以采用金属材料制成，以降低触控感应电极的电阻，提高触控感应电极中信号的传输速度。
请参考图8，图8为本发明实施例的内嵌式触控屏的一剖面结构示意图，该内嵌式触摸屏包括：彩膜基板400、阵列基板500及位于彩膜基板400和阵列基板500之间的液晶层300，彩膜基板400包括：衬底基板401、CF功能层402及触控感应电极403，阵列基板500包括：衬底基板501、TFT功能层502及公共电极层503，公共电极层503被分割成间隔设置的多个触控驱动电极5031和多个公共电极(图未示出)，其中，触控驱动电极5031包括：沿所述触控驱动电极5031的延伸方向间隔设置的多个子触控驱动电极50311，以及用于连接相邻的所述子触控驱动电极50311的金属配线50312。金属配线50312与子触控驱动电极50311均位于公共电极层503，金属配线50312与子触控驱动电极50311串联。
请参考图9，图9为本发明实施例的内嵌式触控屏的另一剖面结构示意图，该内嵌式触摸屏包括：彩膜基板400、阵列基板500及位于彩膜基板400和阵列基板500之间的液晶层300，彩膜基板400包括：衬底基板401、CF功能层402及触控感应电极403，阵列基板500包括：衬底基板501、TFT功能层502及公共电极层503，公共电极层503被分割成间隔设置的多个触控驱动电极5031和多个公共电极(图未示出)，其中，触控驱动电极5031包括：沿所述触控驱动电极5031的延伸方向间隔设置的多个子触控驱动电极50311，以及用于连接相邻的所述子触控驱动电极50311的金属配线50312。金属配线50312位于子触控驱动电极50311之上，与子触控驱动电极50311并联。
以上所述是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明所述原理的前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (8)

1.一种阵列基板，包括公共电极层，所述公共电极层被分割成间隔设置的多个触控驱动电极和多个公共电极，所述触控驱动电极用于分时加载公共电极信号和触控扫描信号，其特征在于，每一所述触控驱动电极包括：沿所述触控驱动电极的延伸方向间隔设置的多个子触控驱动电极，以及用于连接相邻的所述子触控驱动电极的金属配线；
所述金属配线与触控感应电极位置交叠，且，当所述触控驱动电极沿行方向延伸时，所述金属配线在列方向上的宽度小于所述子触控驱动电极在列方向上的宽度，当所述触控驱动电极沿列方向延伸时，所述金属配线在行方向上的宽度小于所述子触控驱动电极在行方向上的宽度；
所述金属配线位于栅线或数据线对应区域。
2.根据权利要求1所述的阵列基板，其特征在于，所述金属配线与所述子触控驱动电极位于不同层，且与所述子触控驱动电极并联。
3.根据权利要求1所述的阵列基板，其特征在于，所述金属配线位于所述公共电极层，与所述子触控驱动电极串联。
4.根据权利要求1所述的阵列基板，其特征在于，所述金属配线与触控感应电极的交叠面积位于2～3平方微米范围内。
5.一种内嵌式触控屏，其特征在于，包括权利要求1-4任一项所述的阵列基板。
6.根据权利要求5所述的内嵌式触控屏，其特征在于，还包括彩膜基板，所述彩膜基板包括触控感应电极及多个像素单元。
7.根据权利要求6所述的内嵌式触控屏，其特征在于，所述触控感应电极位于所述像素单元的非开口区域。
8.根据权利要求7所述的内嵌式触控屏，其特征在于，所述触控感应电极采用金属材料制成。
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