WO2016036156A1

WO2016036156A1 - Diode

Info

Publication number: WO2016036156A1
Application number: PCT/KR2015/009284
Authority: WO
Inventors: 김연상; 이응규; 임건희
Original assignee: 서울대학교산학협력단
Priority date: 2014-09-05
Filing date: 2015-09-03
Publication date: 2016-03-10

Abstract

The present invention relates to a diode of a novel structure, capable of reducing manufacturing costs when compared with other diodes such as a PN-junction diode and a transistor-back-to-back diode, having excellent process stability, durability and electrical characteristics, and having simple manufacturing by using a thin-film process widely used in the industry.

Description

diode

The present invention relates to a diode, and more particularly, to reduce the manufacturing cost compared to other diodes, such as a PN junction diode, a transistor back-to-back diode (transistor-back-to-back diode), process stability, durability, electrical The present invention relates to a diode having a novel structure, which has excellent characteristics and is easily manufactured by a thin film process widely used in the industry.

The representative fields of the future flat panel display market are flexible displays and transparent displays. The flexible display is a light, thin and small, unbreakable shape-based display based on a plastic substrate in a heavy, hard and fragile display centered on a conventional glass substrate. The transparent display is a display that shows the background of the screen, and was conventionally implemented by projecting on a transparent screen. However, the development is now being conducted in order to construct a transparent screen directly, and it is mainly implemented as an AMOLED showing rapid technological development in recent years. It is becoming.

Transparent displays share the characteristics that the screen is visible because the screen has transparency, and the technology to implement is also very diverse.

In order to implement such a transparent display, a diode used as an antistatic circuit in the transparent display also needs to be transparent.

The prior art of such a diode is as follows.

Korean Patent No. 1183111 discloses a monopolar vertical diode in which a substrate, a lower electrode, a ZnO thin film, a ZnMgO thin film, and an upper electrode are sequentially stacked. The lower electrode is formed of Al, Ga, ITO (Indium Tin Oxide) or ZnO. It is a conductive oxide containing In or Ir as an impurity, and the ZnMgO thin film is a g-ZnMgO thin film made of a gradient of concentration of Mg, and relates to a monopolar vertical diode, which is applied to a flat panel display device or a mobile electronic device. It is disclosed that it can be applied in the transparent electronic engineering technology.

The present inventors have a structure different from that of the prior art described above, and the manufacturing process is easier and the manufacturing cost can be reduced compared to a PN junction diode and a transistor back-to-back diode. In order to manufacture diodes of the novel structure as possible, intensive research has been conducted, and as a result, the present invention has been completed.

Accordingly, an object of the present invention is to reduce the manufacturing cost, and to improve the process stability, durability, electrical properties, and the new structure is easy to manufacture a thin film process widely used in the industry compared to the conventional diode To provide a diode.

In order to achieve the above object, the present invention provides a diode in which the following layers are sequentially formed between both substrates, and a Zn-doped conductor layer, an insulator layer formed in contact with the Zn-doped conductor layer, and a Zn formed in contact with the insulator layer. Provided is a diode comprising this doped or undoped conductor layer.

In one embodiment of the present invention, between the Zn-doped conductor layer and the insulator layer, a Zn-doped or undoped conductor layer or a semiconductor layer may be further formed in one layer or repeatedly.

In one embodiment of the present invention, between the insulator layer and the Zn doped or undoped conductor layer, a Zn doped or undoped conductor layer or a semiconductor layer may be further formed in a single layer or repeatedly. have.

In addition, the present invention is a diode in which the following layers are sequentially formed between the two substrates, Zn-doped or undoped conductor layer, Zn-doped conductor layer or semiconductor formed in contact with the Zn-doped or undoped conductor layer It provides a diode comprising a layer, an insulator layer formed in contact with the Zn-doped conductor layer or a semiconductor layer, and a Zn-doped or undoped conductor layer formed in contact with the insulator layer.

In one embodiment of the present invention, the Zn-doped or undoped conductor layer or semiconductor layer is one layer or repeatedly between the Zn-doped or undoped conductor layer and the Zn-doped conductor layer or semiconductor layer. It may be further formed in multiple layers.

In one embodiment of the present invention, a Zn-doped or undoped conductor layer or a semiconductor layer may be further formed in one layer or repeatedly, between the insulator layer and the Zn-doped or undoped conductor layer. .

The diode according to the present invention can be manufactured in an easy process compared to the manufacturing process of the PN junction diode and the transistor back-to-back diode to reduce the manufacturing cost, excellent in process stability, durability, electrical properties, and manufactured in a thin film process widely used in the industry This is possible.

1 to 6 schematically show the structure of a diode according to different aspects of the present invention.

The terms or words used in the specification and claims are not to be construed as being limited to conventional or dictionary meanings, but should be construed as meanings and concepts corresponding to the technical matters of the present invention.

Embodiments described herein are preferred embodiments of the present invention, and do not represent all of the technical idea of the present invention, and thus, there may be various equivalents and modifications that may replace them at the time of the present application.

Hereinafter, the present invention will be described in detail with reference to the drawings.

1 is a schematic diagram showing the simplest structure of a diode according to the invention.

Referring to FIG. 1, a diode according to the present invention is a diode in which the following layers are sequentially formed between two substrates (not shown), and the insulator formed by contacting the Zn-doped conductor layer 10 and the Zn-doped conductor layer. Layer 30 and a conductor layer 40 doped or undoped with Zn formed in contact with the insulator layer.

The Zn-doped conductor layer 10 and Zn-doped or undoped conductor layer 40 formed in contact with the substrate serve as electrodes.

In the Zn-doped conductor layer 10, Zn is an interface dipole formed by chemical action between the insulator layer 30 formed in contact with the conductor layer 10 so that the Zn-doped conductor layer 10 is formed. ) And a band shift to enable diode action, thus realizing a diode having a simple structure as described above.

Accordingly, the diode according to the present invention is characterized by generating diode action using various insulator layers and various kinds of conductor layers doped with Zn.

In one embodiment of the present invention, between the Zn-doped conductor layer 10 and the insulator layer 30, a Zn-doped or undoped conductor layer or a semiconductor layer is formed in one layer or repeatedly to further form a multilayer. Can be.

For example, as illustrated in FIG. 2, Zn-doped or undoped conductor layer or semiconductor layer 11 and Zn-doped semiconductor are formed between Zn-doped or undoped conductor layer 1 and insulator layer 30. Layer 20 may be further formed.

In one embodiment of the present invention, one layer of Zn-doped or undoped conductor layer or semiconductor layer (not shown) is formed between the insulator layer 30 and the conductor layer 40 doped or undoped Zn. Or may be repeatedly formed in multiple layers.

For example, as illustrated in FIG. 3, a Zn-doped or undoped semiconductor layer 31 may be further formed as a single layer between the insulator layer 30 and the Zn-doped or undoped conductor layer 40. Can be.

Also illustratively, a Zn-doped conductor layer or semiconductor layer and a Zn-doped conductor layer or semiconductor layer are repeatedly between the insulator layer 30 and the Zn-doped or undoped conductor layer 40. It can be formed in multiple layers.

4 shows a schematic structure of a diode according to a second aspect according to the invention.

Referring to FIG. 4, a diode according to the present invention is a diode in which the following layers are sequentially formed between two substrates (not shown), and a conductive layer (1) doped or undoped with Zn and Zn doped or undoped Zn-doped conductor layer or semiconductor layer 20 formed in contact with conductor layer 1, insulator layer 30 formed in contact with Zn-doped conductor layer or semiconductor layer 20, and the insulator layer 30 Zn formed in contact with each other includes a doped or undoped conductor layer 40.

In the diode according to the second aspect of the present invention, the Zn-doped or undoped conductor layer 1 and Zn-doped or undoped conductor layer 40 formed in contact with the substrate serve as electrodes.

In one embodiment of the present invention, a Zn doped or undoped conductor layer or semiconductor layer is formed between the Zn doped or undoped conductor layer 1 and the Zn doped conductor layer or semiconductor layer 20. It may be further formed in one layer or multiple layers repeatedly.

For example, as illustrated in FIG. 5, the Zn-doped or undoped conductor layer or semiconductor layer 11 is formed between the Zn-doped or undoped conductor layer 1 and the Zn-doped conductor layer or semiconductor layer 20. ) May be further formed.

Also, as illustrated in FIG. 6, Zn-doped conductor layers or semiconductor layers, Zn-doped conductor layers or semiconductors are formed between a Zn-doped or undoped conductor layer and a Zn-doped conductor layer or semiconductor layer. The layer and the Zn-doped conductor layer or semiconductor layer may be formed sequentially and repeatedly, and such a structure change will be apparent to those skilled in the art.

In one embodiment of the present invention, the Zn-doped or undoped conductor layer or semiconductor layer is one or a plurality of layers between the insulator layer 30 and the Zn-doped or undoped conductor layer 40. It may be further formed as.

For example, as illustrated in FIG. 5, the Zn-doped conductor layer or semiconductor layer 21 and Zn doped or undoped between the insulator layer 30 and the Zn-doped or undoped conductor layer 40. Conductor layer or semiconductor layer 11 may be further formed.

In the present invention, the conductive layer doped with Zn is Li, Be, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Se, Rb, Sr , Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Cs, Ba, Hf, Ta, W, RE, Os, Ir, Pt, Au, Hg, Tl, Pb Zn-doped opaque conductor, Zn _x O _x , In _x Zn _x O _x , in which one or two or more compounds selected from the group consisting of Bi, and a conductive polymer (eg, PEDOT: PSS, PANI) In _x Ga _x Zn _x O _x , Ga _x Zn _x O _x , Sn _x Zn _x O _x , In _x Sn _x Zn _x O _x or Sn _x Ga _x Zn _x O _x , or other elements in these compounds Compound containing, for example, compound containing 10% Ca in In _x Sn _x Zn _x O _x , AlZn (Al 95% + Zn 5%), TiZn (Ti 90% + Zn 10%), CuZn (Cu 99% + Zn 1%), AgZn (Ag 50% + Zn 50%), AlCuZn (Al 50% + Cu 40% + Zn 10%), such as Zn-doped conductor material that is obvious to those skilled in the art.

In the present invention, the Zn-doped conductor layer is Li, Be, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Se, Rb, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Cs, Ba, Hf, Ta, W, RE, Os, Ir, Pt, Au, Hg, Tl, Pb, Bi and a compound containing one or more selected from the group consisting of conductive polymers (for example, PEDOT: PSS, PANI), for example, Al, Cu, Ag, Au, Ti, etc. are used as a single layer Or a mixture of two layers (eg Cu / Ti, Al / Ti, etc.) and Zn, which will be apparent to those skilled in the art, may be formed of an undoped conductor material.

In the present invention, the semiconductor layer doped with Zn is ZnO, In _x Zn _x O _x , In _x Ga _x Zn _x O _x , Ga _x Zn _x O _x , Sn _x Zn _x O _x , In _x Sn _x Zn _x O _It may be formed of a compound selected from the group consisting of _x , Sn _x Ga _x Zn _x O _x , ZnN, ZnS, ZnF, ZnI, ZnCl, ZnSe and ZnTe, but is not necessarily limited thereto.

In the present invention, the Zn-doped semiconductor layer is Si, B-doped Si, P-doped Si, GaAs, Ge, SiC, AlP, AlAs, AlSb, GaP, GaAs, GaN, GaSb, InP, InAs, InSb, CdS, CdSe, CdTe, PbTe, PbS, PbSe, α-Sexythiophene, CuPc, aw-DH6T, Bis (benzodithiophene), Bis (dithienothiophene), Dihexyl anthrathiothiophene, FTTF pentacene, FTTF, BP2T, polythiophene, polyacetylene, P3AT, PTV, P3HT, TCNQ, C ₆₀ , TCNNQ, NTCDA, PTCDA, F ₁₆ -CuPc, aw-DFH-6T, NTCDI-C8F, NTCDI-C _It may be formed of a compound selected from the group consisting of ₈ F, NTCDI-C ₈ F, NTCDI-C ₈ H and PTCDI-C ₈ H, but is not necessarily limited thereto.

In the present invention, the insulator layer is Al _x O _x , Si _x O _x , Si _x N _x , Hf _x O _x , Y _x O _x , Mg _x O _x , Ca _x O _x , Sr _x O _x , Ta _x O _{It may} be formed of one or two or more compounds selected from the group consisting of _x , Ba _x O _x , La _x O _x and Ti _x O _x , PVP, PMMA, PI, P4VP, PVA or SAIT.

Hereinafter, preferred examples are provided to aid the understanding of the present invention, but the following examples are merely for exemplifying the present invention, and it will be apparent to those skilled in the art that various changes and modifications can be made within the scope and spirit of the present invention. It is natural that such variations and modifications fall within the scope of the appended claims.

Example 1 Fabrication of Diodes

Indium Tin Oxide (ITO) was formed on a glass substrate by using a sputter to form a conductor layer doped with Zn having a thickness of 100 nm and heat-treated on a hot plate at 300 ° C. for 1 hour. Thereafter, an insulator layer having a thickness of 30 nm was formed of Al ₂ O ₃ using ALD (atomic layer deposition). Finally, a 100 nm thick Zn-doped conductor layer (a circular shape of a radius of 750 micrometers) was formed of ZnInSnO using a sputter, and a hot plate was heat treated at 300 ° C. for 1 hour to manufacture a diode having the structure shown in FIG. 1. .

For the diode according to this embodiment, it was checked whether the current passed through the IV measuring equipment (Agilent 4155B). As a result, it was confirmed that the current passes when the positive voltage is applied to the ITO electrode and the negative voltage is applied to the ZnInSnO electrode, and the current does not pass in the opposite case. From this, the current rectification is performed at about -30V to 30V. That is, the diode characteristics were confirmed.

Example 2: Fabrication of Diode

ZnInSnO was sputtered to form a conductor layer doped with Zn on a glass substrate with a thickness of 50 nm and heat-treated at 300 ° C. for 1 hour. Thereafter, an insulator layer having a thickness of 100 nm was formed of polyvinyl pirrolidone (PVP) using a solution process, and heat-treated at 200 ° C. for 1 hour. Subsequently, a ZnO-doped ZnO-doped semiconductor layer was formed of ZnO using a sputter, followed by heat treatment at 200 ° C. Then, using ALD to form a conductor layer doped with Zn-doped 30 nm thick ZnO and heat-treated at 100 ℃. Thereafter, a 50 nm-thick Zn-doped conductor layer (a circular shape of a radius of 750 micrometers) was formed by ZnInO using a sputter, and a heat treatment was performed at 200 ° C. to manufacture a diode having the structure shown in FIG. 2.

For the diode according to this embodiment, it was checked whether the current passed through the IV measuring equipment (Agilent 4155B). As a result, it was confirmed that the current passes when the positive voltage is applied to the ZnInSnO electrode and the negative voltage is applied to the ZnInO electrode, and the current does not pass in the opposite case, from which the current rectification is performed at about -20 V to 20 V. That is, the diode characteristics were confirmed.

Example 3: Fabrication of Diodes

InZnO was sputtered to form a conductor layer doped with Zn on a glass substrate with a thickness of 50 nm and heat-treated at 300 ° C. Thereafter, a ZnO-doped Zn-doped semiconductor layer was formed of ZnO using a sputter, and then heat-treated at 200 ° C. Subsequently, an insulator layer having a thickness of 100 nm was formed of SiN _x using CVD (chemical vapor deposition) and heat-treated at 300 ° C. Subsequently, a 50 nm-thick Zn-doped conductor layer was formed of InZnO using a sputter, and then heat-treated at 100 ° C. Then, using a thermal evaporator to form a conductor layer (circular shape of a radius of 750 micrometers) undoped Zn of 50 nm thick in Al to prepare a diode of the structure shown in FIG.

For the diode according to this embodiment, it was checked whether the current passed through the IV measuring equipment (Agilent 4155B). As a result, it was confirmed that when a positive voltage was applied to InZnO and a negative voltage was applied to the Al electrode, a current was passed, and in the opposite case, a current was not passed. From this, a current rectification action was performed at about -80V to 80V. That is, the diode characteristics were confirmed.

Example 4: Fabrication of Diodes

Using a thermal evaporator, a conductor layer undoped with Zn on Cu was formed to a thickness of 50 nm on a glass substrate. Thereafter, an insulator layer having a thickness of 100 nm was formed of SiO _x using CVD. Thereafter, a ZnO-doped semiconductor layer having a thickness of 20 nm was formed of ZnO using a sputter, followed by heat treatment at 150 ° C. Then, using a thermal evaporator to form a conductive layer (circular shape of a radius of 750 micrometers) undoped Zn with Au to a thickness of 30 nm to prepare a diode of the structure shown in FIG.

For the diode according to this embodiment, it was checked whether the current passed through the IV measuring equipment (Agilent 4155B). As a result, it was confirmed that when a positive voltage was applied to Cu and a negative voltage was applied to the Au electrode, a current was passed, and in the opposite case, a current was not passed. From this, a current rectifying action was performed at about -80 V to 80 V, That is, the diode characteristics were confirmed.

Example 5 Fabrication of Diodes

Using a thermal evaporator, a conductor layer undoped with Zn on Al was formed to a thickness of 20 nm on the glass substrate. Then, using a thermal evaporator to form a conductor layer undoped Zn with Ti to a thickness of 30 nm. SnZnO was sputtered to form a Zn-doped semiconductor layer with a thickness of 30 nm and heat-treated at 150 ° C. Thereafter, an insulator layer having a thickness of 100 nm was formed of HfO using ALD, and then heat-treated at 150 ° C. Subsequently, a 50 nm thick Zn-doped semiconductor layer was formed of ZnO using a sputter, and then heat-treated at 100 ° C. Subsequently, a conductor layer doped with InnZZO-doped Zn with a thickness of 30 nm was formed using a sputter, followed by heat treatment at 100 ° C. Then, using a thermal evaporator to form a conductor layer (circular shape of 750 micrometers radius) Zn-doped Zn of 50 nm thickness in Cu to prepare a diode of the structure shown in FIG.

For the diode according to this embodiment, it was checked whether the current passed through the IV measuring equipment (Agilent 4155B). As a result, it was confirmed that when a positive voltage was applied to Al and a negative voltage was applied to the Cu electrode, a current was passed, and in the opposite case, a current was not passed. From this, a current rectifying action was performed at about -50 V to 50 V, That is, the diode characteristics were confirmed.

Example 6 Fabrication of Diode

Using a thermal evaporator, a conductor layer undoped with Zn on Al was formed to a thickness of 50 nm on the glass substrate. Thereafter, an insulator layer was formed to a thickness of 30 nm by using AlO as a sputter. Subsequently, a ZnO-doped semiconductor layer having a thickness of 5 nm was formed of ZnO using a sputter, and then heat-treated at 200 ° C. for 5 minutes. Then, using a sputter to form a conductor layer doped with Zn-doped 10 nm thick ZnSnO and heat-treated at 200 ℃ for 5 minutes. Thereafter, a 5 nm thick Zn-doped semiconductor layer formed of ZnO and a 10 nm thick Zn-doped conductor layer formed of InZnSnO were repeatedly formed as described above. Thereafter, a 10 nm thick Zn-doped conductor layer (a circular shape having a radius of 750 micrometers) was formed of InZnSnO using a sputter, and then heat-treated at 200 ° C. for 5 minutes to manufacture a diode having the structure shown in FIG. 6.

For the diode according to this embodiment, it was checked whether the current passed through the IV measuring equipment (Agilent 4155B). As a result, it was confirmed that when a positive voltage was applied to Al and a negative voltage was applied to the InZnSnO electrode, a current was passed, and in the opposite case, a current was not passed. From this, a current rectifying action was performed at about -20 V to 20 V, That is, the diode characteristics were confirmed.

Claims

A diode in which the following layers are sequentially formed between both substrates,

A conductor layer doped with Zn,

An insulator layer formed in contact with the Zn-doped conductor layer, and

A conductor layer doped or undoped with Zn formed in contact with the insulator layer,

Diode comprising a.
The method of claim 1,

The substrate is selected from the group consisting of a glass substrate, a plastic substrate, a Si substrate and a substrate consisting of carbon.
The method of claim 1,

And a Zn doped or undoped conductor layer or a semiconductor layer is formed in one layer or repeatedly, between the Zn-doped conductor layer and the insulator layer.
The method of claim 1,

And a Zn-doped or undoped conductor layer or a semiconductor layer between the insulator layer and the Zn-doped or undoped conductor layer is formed in one layer or repeatedly in multiple layers.
The method of claim 1,

The Zn-doped conductor layer is Li, Be, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Se, Rb, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Cs, Ba, Hf, Ta, W, RE, Os, Ir, Pt, Au, Hg, Tl, Pb, Bi and Zn-doped opaque conductors containing at least one compound selected from the group consisting of conductive polymers, Zn x O x , In x Zn x O x , In x Ga x Zn x O x , Ga x Zn x Diode formed by O x , Sn x Zn x O x , In x Sn x Zn x O x or Sn x Ga x Zn x O x .
The method of claim 1,

The insulator layer is Al x O x , Si x O x , Si x N x , Hf x O x , Y x O x , Mg x O x , Ca x O x , Sr x O x , Ta x O x , Ba Diode formed by one or two or more compounds selected from the group consisting of x O x , La x O x and Ti x O x , PVP, PMMA, PI, P4VP, PVA or SAIT.
The method of claim 4, wherein

The Zn-doped conductor layer is Li, Be, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Se, Rb, Sr, Y , Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Cs, Ba, Hf, Ta, W, RE, Os, Ir, Pt, Au, Hg, Tl, Pb, Bi And a compound containing one or two or more selected from the group consisting of conductive polymers.
The method of claim 4, wherein

The Zn-doped semiconductor layer is ZnO, In x Zn x O x , In x Ga x Zn x O x , Ga x Zn x O x , Sn x Zn x O x , In x Sn x Zn x O x , Sn A diode, which is formed of a compound selected from the group consisting of: x Ga x Zn x O x , ZnN, ZnS, ZnF, ZnI, ZnCl, ZnSe and ZnTe.
The method of claim 4, wherein

The Zn-doped semiconductor layer is Si, B-doped Si, P-doped Si, GaAs, Ge, SiC, AlP, AlAs, AlSb, GaP, GaAs, GaN, GaSb, InP, InAs, InSb, CdS , CdSe, CdTe, PbTe, PbS, PbSe, α-Sexythiophene, CuPc, aw-DH6T, Bis (benzodithiophene), Bis (dithienothiophene), Dihexylantradiothiophene, FTTF pentacene , FTTF, BP2T, Polythiophene, Polyacetylene, P3AT, PTV, P3HT, TCNQ, C 60 , TCNNQ, NTCDA, PTCDA, F 16 -CuPc, aw-DFH-6T, NTCDI-C8F, NTCDI-C 8 F, A diode, characterized in that formed of a compound selected from the group consisting of NTCDI-C 8 F, NTCDI-C 8 H and PTCDI-C 8 H.
A diode in which the following layers are sequentially formed between both substrates,

A conductor layer doped or undoped with Zn,

A Zn-doped conductor layer or semiconductor layer formed in contact with the Zn-doped or undoped conductor layer,

An insulator layer formed in contact with the conductor layer or semiconductor layer doped with Zn, and

A conductor layer doped or undoped with Zn formed in contact with the insulator layer,

Diode comprising a.
The method of claim 10,

The substrate is selected from the group consisting of a glass substrate, a plastic substrate, a Si substrate and a substrate consisting of carbon.
The method of claim 10,

Between the Zn-doped or undoped conductor layer and the Zn-doped conductor layer or semiconductor layer, a Zn-doped or undoped conductor layer or semiconductor layer is formed in one layer or repeatedly to further form a multilayer. Diode.
The method of claim 1,

And a Zn-doped or undoped conductor layer or a semiconductor layer is formed in one layer or repeatedly, between the insulator layer and the Zn-doped or undoped conductor layer.
The method of claim 10,

The Zn-doped conductor layer is Li, Be, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Se, Rb, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Cs, Ba, Hf, Ta, W, RE, Os, Ir, Pt, Au, Hg, Tl, Pb, Bi and Zn-doped opaque conductors containing at least one compound selected from the group consisting of conductive polymers, Zn x O x , In x Zn x O x , In x Ga x Zn x O x , Ga x Zn x Diode formed by O x , Sn x Zn x O x , In x Sn x Zn x O x or Sn x Ga x Zn x O x .
The method of claim 10,

The insulator layer is Al x O x , Si x O x , Si x N x , Hf x O x , Y x O x , Mg x O x , Ca x O x , Sr x O x , Ta x O x , Ba Diode formed by one or two or more compounds selected from the group consisting of x O x , La x O x and Ti x O x , PVP, PMMA, PI, P4VP, PVA or SAIT.
The method of claim 10,

The Zn-doped conductor layer is Li, Be, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Se, Rb, Sr, Y , Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Cs, Ba, Hf, Ta, W, RE, Os, Ir, Pt, Au, Hg, Tl, Pb, Bi And a compound containing at least one compound selected from the group consisting of conductive polymers.
The method of claim 10,

The Zn-doped semiconductor layer is ZnO, In x Zn x O x , In x Ga x Zn x O x , Ga x Zn x O x , Sn x Zn x O x , In x Sn x Zn x O x , Sn A diode, which is formed of a compound selected from the group consisting of: x Ga x Zn x O x , ZnN, ZnS, ZnF, ZnI, ZnCl, ZnSe and ZnTe.
The method of claim 10,

The Zn-doped semiconductor layer is Si, B-doped Si, P-doped Si, GaAs, Ge, SiC, AlP, AlAs, AlSb, GaP, GaAs, GaN, GaSb, InP, InAs, InSb, CdS , CdSe, CdTe, PbTe, PbS, PbSe, α-Sexythiophene, CuPc, aw-DH6T, Bis (benzodithiophene), Bis (dithienothiophene), dihexylanthradiotethiophene, FTTF pentacene , FTTF, BP2T, Polythiophene, Polyacetylene, P3AT, PTV, P3HT, TCNQ, C 60 , TCNNQ, NTCDA, PTCDA, F 16 -CuPc, aw-DFH-6T, NTCDI-C8F, NTCDI-C 8 F, A diode, characterized in that formed of a compound selected from the group consisting of NTCDI-C 8 F, NTCDI-C 8 H and PTCDI-C 8 H.