WO2016033794A1 - 一种封装方法及电子系统产品 - Google Patents

一种封装方法及电子系统产品 Download PDF

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WO2016033794A1
WO2016033794A1 PCT/CN2014/085999 CN2014085999W WO2016033794A1 WO 2016033794 A1 WO2016033794 A1 WO 2016033794A1 CN 2014085999 W CN2014085999 W CN 2014085999W WO 2016033794 A1 WO2016033794 A1 WO 2016033794A1
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electronic system
shielding material
dielectric layer
value
electromagnetic shielding
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PCT/CN2014/085999
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English (en)
French (fr)
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汪柳平
上官东凯
曹立强
于中尧
陆原
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中国科学院微电子研究所
华进半导体封装先导技术研发中心
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Priority to PCT/CN2014/085999 priority Critical patent/WO2016033794A1/zh
Publication of WO2016033794A1 publication Critical patent/WO2016033794A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • the present invention relates to the field of semiconductors, and in particular, to a packaging method and an electronic system product.
  • the system includes an electronic system of analog integrated circuits or radio frequency integrated circuits.
  • the embodiment of the invention solves the problem that the electronic system in the prior art may be unstable or embarrassed by providing a packaging method and an electronic system product.
  • an embodiment of the present invention provides a packaging method, including:
  • the packaged electronic system forms a packaged semi-finished product
  • a shielding electromagnetic layer is formed on the surface of the packaged semi-finished product to form a shielding dielectric layer, wherein the synthetic electromagnetic shielding material has a first dielectric value and a first magnetic value.
  • the thickness of the shielding dielectric layer and the internal penetration depth value of the synthetic electromagnetic shielding material Meet the first ratio.
  • the thickness of the shielding dielectric layer is 1.16 times the internal penetration depth value.
  • an embodiment of the present invention further provides an electronic system product, including:
  • Packaging a semi-finished product, forming an electronic system
  • the shielding dielectric layer is formed by coating a surface of the packaged semi-finished product with a synthetic electromagnetic shielding material, wherein the synthetic electromagnetic shielding material has a first dielectric value and a first magnetic value.
  • the thickness of the shielding dielectric layer and the internal penetration depth value of the synthetic shielding material satisfy a first ratio.
  • the thickness of the shielding dielectric layer is 1.16 times the internal penetration depth value.
  • the synthetic electromagnetic shielding material Since the synthetic electromagnetic shielding material is coated on the packaged semi-finished product after packaging the electronic system, in recent years, the synthetic electromagnetic shielding material can continuously change in dielectric constant and magnetic medium constant, so that it can be synthesized according to the needs of the present invention.
  • the electromagnetic shielding material with specific dielectric value and specific magnetic value, the synthetic electromagnetic shielding material after synthesis has high electrical conductivity and high magnetic permeability, so as to shield external electromagnetic waves and suppress the resonance of electromagnetic waves in the cavity of the electronic system. Therefore, the problem of the resonant frequency of the electronic system working in the cavity is avoided, and the electronic system can be protected.
  • FIG. 1 is a flowchart of a packaging method in an embodiment of the present invention
  • FIG. 2 is a schematic structural view of an electronic system product according to an embodiment of the present invention.
  • the embodiment of the invention provides a packaging method and an electronic system product.
  • the encapsulation method in the embodiment of the present invention includes the following processes:
  • Step 110 The packaged electronic system forms a packaged semi-finished product.
  • the formed packaged semi-finished product has a specific package structure, and the package structure is a cavity, so that the cavity of the packaged semi-finished product has a first resonant frequency and a second resonant frequency.
  • Step 120 Applying a synthetic electromagnetic shielding material on the surface of the packaged semi-finished product to form a shielding dielectric layer, wherein the synthetic electromagnetic shielding material has a first dielectric value and a first magnetic value.
  • synthetic electromagnetic shielding materials can continuously change in dielectric constant and magnetic medium constant, and natural materials cannot satisfy the above conditions (for example, the conductive adhesives used in the prior art have no high conductivity and high required by the embodiments of the present invention. Magnetic permeability).
  • the synthetic process of artificially synthesizing electromagnetic shielding materials is known to those skilled in the art, and for the sake of brevity of the description, no further details are provided herein.
  • the synthetic electromagnetic shielding material coated with the packaged semi-finished product needs to synthesize the corresponding synthetic electromagnetic shielding material according to the required first dielectric value and the first magnetic value, thereby obtaining the high required for the corresponding electronic system product.
  • Synthetic electromagnetic shielding material with electrical conductivity and high magnetic permeability is used.
  • the thickness of the shielding dielectric layer and the internal penetration depth value of the synthetic electromagnetic shielding material satisfy the first ratio.
  • the intracavity resonant frequency includes a first resonant frequency and a second resonant frequency.
  • the resonant frequency energy in the cavity is mainly concentrated at the first resonant frequency, and therefore, the internal penetration depth value ⁇ of the first resonant frequency in the synthetic electromagnetic shielding material is calculated for the first resonant frequency.
  • the internal penetration depth value ⁇ is calculated according to the formula: Calculated.
  • ⁇ represents the depth of penetration of the first resonant frequency in the shielding dielectric layer
  • D represents the thickness of the shielding dielectric layer
  • f represents the first resonant frequency in the cavity
  • ⁇ 0 represents the magnetic medium constant in vacuum
  • ⁇ represents electromagnetic
  • the electrolyte constant of the shielding material, ⁇ is the pi constant.
  • the shielding medium layer can be ensured under the premise that the suppression effect on the first resonance frequency is the same.
  • the thickness is the smallest.
  • an embodiment of the present invention further provides an electronic system product.
  • the electronic system product shown includes:
  • the shielding dielectric layer 202 is formed by coating a surface of the packaged semi-finished product 201 with a synthetic electromagnetic shielding material having a first dielectric value and a first magnetic value.
  • the method comprises: the thickness of the shielding dielectric layer 202 and the internal penetration depth value of the synthetic shielding material satisfy the first ratio.
  • the thickness of the shielding dielectric layer 202 is 1.16 times the value of the in-depth depth.
  • the electronic system product described in this embodiment is an electronic system product formed by the method of the present invention. Therefore, those skilled in the art can understand the present embodiment based on the packaging method described in the embodiment of the present invention.
  • the specific implementation of the electronic system product and its various variations are not described in detail herein for how the electronic system product implements the method in the embodiment of the present application.
  • the electronic system products used by those skilled in the art to implement the method of information processing in the embodiments of the present application are all within the scope of the present invention.
  • the synthetic electromagnetic shielding material Since the synthetic electromagnetic shielding material is coated on the packaged semi-finished product after packaging the electronic system, in recent years, the synthetic electromagnetic shielding material can continuously change in dielectric constant and magnetic medium constant, and therefore, can be synthesized according to the needs of the present invention.
  • the specific dielectric value and the magnetic value of the electromagnetic shielding material, the synthesized synthetic electromagnetic shielding material has high electrical conductivity and high magnetic permeability, so as to shield the external electromagnetic wave and suppress the resonance of the electromagnetic wave in the cavity of the electronic system. Therefore, the problem of the resonant frequency of the electronic system working in the cavity is avoided, and the electronic system can be protected.

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  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

一种封装工艺及电子系统产品，封装工艺包括：封装电子系统形成一封装半成品；在封装半成品表面涂覆合成电磁屏蔽材料形成一屏蔽介质层，其中，合成电磁屏蔽材料具有第一电介值和第一磁介值。从而避免了电子系统工作在腔体内的谐振频率的问题，能保护好电子系统。

Description

一种封装方法及电子系统产品 技术领域
本发明涉及半导体领域，尤其涉及一种封装方法及电子系统产品。
背景技术
随着微电子系统工作频率越来越高，电子系统封装辐射能力也越强，这就严重干扰了封装系统内部电子系统，会经常导致电子封装系统工作不稳定，甚至电子系统瘫痪，特别是封装系统包含有模拟集成电路或射频集成电路的电子系统。
现有技术中通过在封装体表面涂上导电胶，这样就可以对外界的电场进行屏蔽起到一定的作用。但是封装体表面涂覆一层导电胶后，因为导电胶的介电常数很高，就形成了一个腔体(表面具有金属高导电特性)，而任何腔体的内部都有谐振频率。根据高导电材料表面的腔体会在腔体内部激发起谐振频率，所激发的谐振频率在封装体内会非常强。如果封装的电子系统工作在谐振频率上，就会导致系统很不稳定或瘫痪。由此可以看出现有技术中在封装体表面涂上导电胶的方式仍然存到导致电子系统会不稳定或瘫痪的问题。
发明内容
本发明实施例通过提供一种封装方法及电子系统产品，解决了现有技术中电子系统会不稳定或瘫痪的问题。
第一方面，本发明实施例提供了一种封装方法，包括：
封装电子系统形成一封装半成品；
在所述封装半成品表面涂覆合成电磁屏蔽材料形成一屏蔽介质层，其中，所述合成电磁屏蔽材料具有第一电介值和第一磁介值。
优选的，所述屏蔽介质层的厚度与所述合成电磁屏蔽材料的内穿透深度值 满足第一比例。
优选的，所述屏蔽介质层的厚度为所述内穿深度值的1.16倍。
第二方面，本发明实施例还提供了一种电子系统产品，包括：
封装半成品，封装一电子系统形成；
屏蔽介质层，通过在所述封装半成品表面涂覆合成电磁屏蔽材料形成，其中，所述合成电磁屏蔽材料具有第一电介值和第一磁介值。
优选的，所述屏蔽介质层的厚度与所述合成屏蔽材料的内穿透深度值满足第一比例。
优选的，所述屏蔽介质层的厚度为所述内穿深度值的1.16倍。
本发明实施例中的技术方案，至少具有如下技术效果：
由于采用了合成电磁屏蔽材料涂覆在对电子系统进行封装之后的封装半成品上，而近年来合成电磁屏蔽材料能够在电介质常数和磁介质常数连续变化，因此可以根据本发明需要，合成所需要的特定电介值和特定磁介值的电磁屏蔽材料，合成后的合成电磁屏蔽材料具有高电导率和高磁导率，这样既可以屏蔽外界的电磁波，同时能抑制电子系统的腔体内电磁波的谐振，从而避免了电子系统工作在腔体内的谐振频率的问题，能保护好电子系统。
附图说明
图1为本发明实施例中的封装方法的流程图；
图2为本发明实施例中的电子系统产品的结构示意图。
具体实施方式
为了解决现有技术中电子系统会不稳定或瘫痪的技术问题，本发明实施例提供了一种封装方法及电子系统产品。
为了更好的理解上述技术方案，下面将结合说明书附图以及具体的实施方式对上述技术方案进行详细的说明。
参考图1所示，本发明实施例中的封装方法，包括如下流程：
步骤110、封装电子系统形成一封装半成品。
具体的，形成的封装半成品具有一特定封装结构，封装结构内为一腔体，从而封装半成品的腔体内具有第一谐振频率和第二谐振频率。
步骤120、在封装半成品表面涂覆合成电磁屏蔽材料形成一屏蔽介质层，其中，合成电磁屏蔽材料具有第一电介值和第一磁介值。
具体的，近年来人工合成电磁屏蔽材料能够在电介质常数和磁介质常数连续变化，而自然界材料不能满足上述条件(比如现有使用的导电胶就没有本发明实施例所需要的高电导率和高磁导率)。人工合成电磁屏蔽材料的合成工艺已经为本领域技术人员所知晓，为了说明书的简洁，在此不再赘述。
在具体实施过程中，涂覆封装半成品的合成电磁屏蔽材料需要根据所需要的第一电介值和第一磁介值来合成对应的合成电磁屏蔽材料，从而获得对应电子系统产品所需要的高电导率和高磁导率的合成电磁屏蔽材料。
优选的，屏蔽介质层的厚度与合成电磁屏蔽材料的内穿透深度值满足第一比例。具体的，腔体内谐振频率包括第一谐振频率和第二谐振频率。但是腔体内谐振频率能量主要集中在第一谐振频率，因此，针对第一谐振频率计算第一谐振频率在合成电磁屏蔽材料的内穿透深度值δ。内穿透深度值δ根据计算公式：
Figure PCTCN2014085999-appb-000001
计算得到。公式中，δ表示第一谐振频率在屏蔽介质层内的内穿透深，D表示屏蔽介质层的厚度，f表示腔体内的第一谐振频率，μ0表示真空中磁介质常数，σ表示电磁屏蔽材料的电解质常数，π为圆周率常数。
发明人运用遗传优化计算算法确定屏蔽介质层的厚度与内穿深度值的第一比例为1.1～1.2倍之间时，能够保证对第一谐振频率的抑制效果相同的前提下，屏蔽介质层的厚度最小。
基于同一发明构思，本发明实施例还提供了一种电子系统产品，如图2所示，所示电子系统产品包括：
封装半成品201，封装一电子系统形成；
屏蔽介质层202，通过在封装半成品201表面涂覆合成电磁屏蔽材料形成，其中，合成电磁屏蔽材料具有第一电介值和第一磁介值。
优选的，包括：屏蔽介质层202的厚度与合成屏蔽材料的内穿透深度值满足第一比例。
优选的，屏蔽介质层202的厚度为内穿深度值的1.16倍。
由于本实施例所介绍的电子系统产品为实施本发明实施例中的封装方法形成的电子系统产品，故而基于本发明实施例中所介绍的封装方法，本领域所属技术人员能够了解本实施例的电子系统产品的具体实施方式以及其各种变化形式，所以在此对于该电子系统产品如何实现本申请实施例中的方法不再详细介绍。只要本领域所属技术人员实施本申请实施例中信息处理的方法所采用的电子系统产品，都属于本发明所欲保护的范围。
本发明实施例提供的一个或多个技术方案至少具有图如下技术效果：
由于采用了合成电磁屏蔽材料涂覆在对电子系统进行封装之后的封装半成品上，而近年来合成电磁屏蔽材料能够在电介质常数和磁介质常数连续变化，因此，可以根据本发明需要，合成所需要的特定电介值和磁介值的电磁屏蔽材料，合成后的合成电磁屏蔽材料具有高电导率和高磁导率，这样既可以屏蔽外界的电磁波，同时能抑制电子系统的腔体内电磁波的谐振，从而避免了电子系统工作在腔体内的谐振频率的问题，能保护好电子系统。
尽管已描述了本发明的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例作出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本发明范围的所有变更和修改。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (6)

  1. 一种封装方法，其特征在于，包括：
    封装电子系统形成一封装半成品；
    在所述封装半成品表面涂覆合成电磁屏蔽材料形成一屏蔽介质层，其中，所述合成电磁屏蔽材料具有第一电介值和第一磁介值。
  2. 如权利要求1所述的方法，其特征在于，所述屏蔽介质层的厚度与所述合成电磁屏蔽材料的内穿透深度值满足第一比例。
  3. 如权利要求2所述的方法，其特征在于，所述屏蔽介质层的厚度为所述内穿深度值的1.16倍。
  4. 一种电子系统产品，其特征在于，包括：
    封装半成品，封装一电子系统形成；
    屏蔽介质层，通过在所述封装半成品表面涂覆合成电磁屏蔽材料形成，其中，所述合成电磁屏蔽材料具有第一电介值和第一磁介值。
  5. 如权利要求4所述的电子系统产品，其特征在于，包括：所述屏蔽介质层的厚度与所述合成屏蔽材料的内穿透深度值满足第一比例。
  6. 如权利要求5所述的电子系统产品，其特征在于，所述屏蔽介质层的厚度为所述内穿深度值的1.16倍。
PCT/CN2014/085999 2014-09-05 2014-09-05 一种封装方法及电子系统产品 WO2016033794A1 (zh)

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US20100243313A1 (en) * 2009-03-30 2010-09-30 Empire Technology Development Llc Magnetic composite, method for producing the same, and shielding structure
CN102339763A (zh) * 2010-07-21 2012-02-01 飞思卡尔半导体公司 装配集成电路器件的方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1336793A (zh) * 2000-04-10 2002-02-20 株式会社日立制作所 电磁波吸收体、其制造方法和使用该电磁波吸收体的器具
CN1622327A (zh) * 2003-11-27 2005-06-01 夏普株式会社 光半导体元件以及使用该光半导体元件的电子装置
US20080061406A1 (en) * 2006-09-12 2008-03-13 Joh Cheol Ho Semiconductor package having electromagnetic shielding part
CN101145526A (zh) * 2006-09-13 2008-03-19 日月光半导体制造股份有限公司 具有电磁屏蔽的半导体封装结构及其制作方法
US20100243313A1 (en) * 2009-03-30 2010-09-30 Empire Technology Development Llc Magnetic composite, method for producing the same, and shielding structure
CN102339763A (zh) * 2010-07-21 2012-02-01 飞思卡尔半导体公司 装配集成电路器件的方法

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