WO2016032242A1 - Substrate treatment apparatus and substrate treatment method - Google Patents

Substrate treatment apparatus and substrate treatment method Download PDF

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Publication number
WO2016032242A1
WO2016032242A1 PCT/KR2015/008951 KR2015008951W WO2016032242A1 WO 2016032242 A1 WO2016032242 A1 WO 2016032242A1 KR 2015008951 W KR2015008951 W KR 2015008951W WO 2016032242 A1 WO2016032242 A1 WO 2016032242A1
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WO
WIPO (PCT)
Prior art keywords
substrate
chemical liquid
heating
supply
chemical
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PCT/KR2015/008951
Other languages
French (fr)
Korean (ko)
Inventor
정광일
이병수
유주형
Original Assignee
주식회사 제우스
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Priority claimed from KR1020140112153A external-priority patent/KR102064804B1/en
Priority claimed from KR1020140112152A external-priority patent/KR102069078B1/en
Application filed by 주식회사 제우스 filed Critical 주식회사 제우스
Publication of WO2016032242A1 publication Critical patent/WO2016032242A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, in a wet sheet process, the temperature of the substrate can be maintained uniformly, and the supply of the chemical liquid is controlled to uniformize the substrate processing process and the quality of the substrate. It relates to a substrate processing apparatus and a substrate processing method that can ensure the.
  • the substrate processing apparatus varies in the manner of heating the substrate depending on the process.
  • direct heating using an infrared lamp or a sealed structure to prevent heat loss is applied.
  • wet process two or more liquids are mixed to use heat of chemical reaction, or a liquid is directly heated and supplied. This applies.
  • convective heat and radiant heat are mainly used in the batch process in the dry process, and thermal energy is supplied in the sheetfed process using radiant heat.
  • a method of directly heating and supplying a liquid is applied.
  • a method using a chemical reaction heat is mainly applied.
  • the general dry sheeting process uses an infrared lamp to supply a lot of heat energy in a short time to complete the process.
  • This process is commonly called Rapid Thermal Process (RTP).
  • RTP Rapid Thermal Process
  • the central temperature of the substrate tends to be higher than the peripheral temperature.
  • Republic of Korea Patent Publication No. 2007-0094674 published on September 21, 2007, name of the invention: sheet type substrate processing apparatus
  • Republic of Korea Patent Publication No. 2014-0053823 2014.05.08 publication, the invention of Name: liquid treatment apparatus and liquid treatment method
  • the present invention has been made in order to improve the above problems, it is possible to compensate the temperature of the part where the chemical solution is supplied to maintain the temperature of the substrate as a whole, and to adjust the supply of the chemical liquid substrate due to the lack of corrosive materials, etc. It is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of eliminating the nonuniformity of the processing step and appropriately supplying the chemical liquid required for the substrate processing step.
  • Substrate processing apparatus for supporting the substrate; A chemical liquid supply member supplying chemical liquids intermittently to the substrate; And a substrate heating member for heating the substrate.
  • the chemical liquid supply member the chemical liquid storage unit for storing the chemical liquid; A chemical solution supplying part for injecting a chemical solution onto the substrate; And a supply control unit connecting the chemical liquid storage unit and the chemical liquid supply unit to guide the movement of the chemical liquid and intermittently supplying the chemical liquid of the chemical liquid storage unit to the chemical liquid supply unit during a substrate processing process.
  • the flow control valve is characterized in that for controlling the flow rate of the chemical liquid moving through the chemical liquid guide tube, so that the chemical liquid is periodically supplied for a predetermined time.
  • the substrate processing apparatus further includes: a chemical liquid measurement member positioned on one side of the substrate support member to measure a flow rate or a component ratio of the chemical liquid separated from the outside of the substrate, and to transmit a measured value to a control member.
  • the control member may control the flow rate control valve to supply the chemical liquid to the substrate when the flow rate or the component ratio of the chemical liquid measured by the chemical liquid measuring member corresponds to a set value or less.
  • the substrate heating member is characterized in that for heating the substrate by varying the degree of heating according to the position where the chemical liquid supplied from the chemical liquid supply member is supplied to the substrate.
  • the substrate heating member in the present invention the lamp mounting portion located on one side of the substrate; And a heating lamp unit positioned in the lamp mounting unit and including a plurality of heating lamps, the heating lamp unit heating the substrate by adjusting an output per unit area of a region corresponding to the region in which the chemical liquid is injected onto the substrate. .
  • the heating lamp unit the control member to control the output of the heating lamp for heating the area corresponding to the area supplied with the chemical liquid to the substrate, characterized in that for controlling the output for each position of the heating lamp.
  • the heating lamp unit the control member material for controlling the number of unit of the heating lamp for heating the area corresponding to the area supplied with the chemical liquid to the substrate, characterized in that for controlling the output for each position of the heating lamp. do.
  • the substrate processing apparatus further includes a temperature measuring member for measuring the temperature of the substrate, wherein the control member adjusts the output of the heating lamp according to the temperature distribution of the substrate measured by the temperature measuring member. Characterized in that.
  • the substrate is mounted on the substrate support member, the preparation step of applying a chemical to the substrate; And a processing step of controlling the substrate heating member and the chemical liquid supply member to supply the chemical liquid intermittently while heating the substrate.
  • the process preparation step the substrate seating step for mounting the substrate on the substrate support member; A substrate rotating step of rotating the substrate seated on the substrate supporting member; And a substrate coating step of supplying the chemical liquid to the substrate to apply the chemical liquid to the substrate.
  • the processing step the chemical liquid measuring member located on one side of the substrate measuring the amount or component ratio of the chemical liquid is separated from the substrate; And analyzing, by the controller member, the amount or component ratio of the chemical liquid measured by the chemical liquid measurement member, and controlling the chemical liquid supply member to supply the chemical liquid to the substrate when the amount falls below a set value. It is done.
  • the processing step the step of periodically supplying a chemical liquid to the substrate while heating the substrate; And determining, by the control member, whether or not the predetermined processing time has elapsed, and stopping the heating of the substrate and the supply of the chemical liquid when the processing time has elapsed.
  • the processing step the control member to control the substrate heating member, by heating the substrate by varying the degree of heating depending on the position where the chemical liquid supplied from the chemical liquid supply member is supplied to the substrate; Characterized in that it comprises a.
  • the substrate processing apparatus and the substrate processing method according to the present invention have the effect of maintaining the temperature of the substrate uniformly by adjusting the output of the heating lamp unit at the position corresponding to the portion to which the chemical liquid is supplied to compensate for the temperature.
  • the present invention can adjust the temperature unevenness of the substrate in real time by adjusting the output of the heating lamp unit using the temperature measuring member and the control member.
  • the present invention by intermittently supplying the chemical liquid to ensure uniformity of the substrate processing step, to prevent the deterioration of the quality of the substrate due to the lack of the chemical liquid, and to enable a stable substrate processing step.
  • the present invention controls the supply of the chemical liquid in the supply control unit connecting the chemical storage unit and the chemical liquid supply, thereby enabling the intermittent supply of the chemical liquid to the substrate.
  • the present invention is to periodically supply the chemical liquid for a predetermined time, to prevent the lack of the chemical in advance to ensure uniformity of the process.
  • the present invention measures the amount, the component of the chemical liquid in the chemical liquid measurement member, and controls the supply of the chemical liquid on the basis of this to prevent the lack of the amount of the chemical liquid, specific components.
  • FIG. 1 is a front view of a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a view showing a state in which the chemical liquid is supplied in the substrate processing apparatus according to an embodiment of the present invention.
  • FIG 3 is a view showing a state in which the chemical liquid is injected in the substrate processing apparatus according to the first embodiment of the present invention.
  • FIG 4 is a view showing a region in which chemical liquid is injected in the substrate processing apparatus according to the first embodiment of the present invention.
  • FIG 5 is a view showing a state in which the output of the heating lamp is different in the substrate processing apparatus according to the first embodiment of the present invention.
  • FIG. 6 is a view showing a state in which the density of the heating lamp is different in the substrate processing apparatus according to the first embodiment of the present invention.
  • FIG. 7 is a view showing a state in which a heating lamp having a different output is applied in the substrate processing apparatus according to the first embodiment of the present invention.
  • FIG 8 is a view showing a state in which the chemical liquid is injected in the substrate processing apparatus according to the second embodiment of the present invention.
  • FIG. 9 is a view showing a region in which chemical liquid is injected in the substrate processing apparatus according to the second embodiment of the present invention.
  • FIG. 10 is a view showing a state in which the output of the heating lamp is different in the substrate processing apparatus according to the second embodiment of the present invention.
  • FIG 11 is a view showing a state in which the density of the heating lamp is different in the substrate processing apparatus according to the second embodiment of the present invention.
  • FIG. 12 is a view showing a state in which a heating lamp having a different output is applied in the substrate processing apparatus according to the second embodiment of the present invention.
  • FIG. 13 is a view showing a state in which a chemical liquid is injected in the substrate processing apparatus according to the third embodiment of the present invention.
  • FIG 14 is a view showing a region in which chemical liquid is injected in the substrate processing apparatus according to the third embodiment of the present invention.
  • 15 is a view showing a state in which the output of the heating lamp is different in the substrate processing apparatus according to the third embodiment of the present invention.
  • 16 is a view showing a state in which the density of the heating lamp is different in the substrate processing apparatus according to the third embodiment of the present invention.
  • FIG. 17 is a diagram illustrating a state in which a heating lamp having a different output is applied in a substrate processing apparatus according to a third embodiment of the present invention.
  • FIG. 18 is a view showing a substrate processing method according to an embodiment of the present invention.
  • 19 is a view showing supply and heating of a chemical liquid in a substrate processing apparatus and a substrate processing method according to an embodiment of the present invention.
  • FIG. 1 is a front view of a substrate processing apparatus according to an embodiment of the present invention
  • FIG. 2 is a view illustrating a state in which a chemical solution is supplied in a substrate processing apparatus according to an embodiment of the present invention.
  • the substrate processing apparatus 1 includes a substrate support member 100, a chemical liquid supply member 200, and a substrate heating member 300.
  • the substrate supporting member 100 supports the substrate S and rotates the substrate S.
  • the substrate support member 100 includes a chuck table 110, a rotation shaft 130, and a driver 150.
  • the chuck table unit 110 supports the substrate (S).
  • the chuck table 110 includes a chuck table 111, a fixing pin 113, and a chuck pin 115.
  • the central portion of the chuck table 111 is coupled to the rotation shaft 130, and rotates together with the rotation shaft 130.
  • the chuck table 111 has a plate shape, and the fixing pin 113 and the chuck pin 115 are positioned on the upper side.
  • the fixing pin 113 has a lower end coupled to the chuck table 111 by bolting or the like, and the substrate S is seated on the upper end.
  • the chuck pin 115 supports the circumference of the substrate S to prevent the substrate S from being separated.
  • the chuck pin 115 moves between the support position and the standby position by a moving part (not shown).
  • the support position means a position where the chuck pin 115 is in contact with the periphery of the substrate S
  • the standby position is the chuck pin 115 at the periphery of the substrate S to allow the substrate S to be seated or removed. This means the location is spaced.
  • the rotary shaft 130 is connected to the center of rotation of the chuck table 111 and is rotated together with the chuck table 110 by the driving unit 150.
  • the driving unit 150 includes an electric motor and the like, converts electrical energy applied from the outside into rotational energy, and rotates the rotation shaft unit 130 using the rotational energy.
  • the chemical liquid supply member 200 supplies the chemical liquid to the substrate S.
  • the chemical liquid supply member 200 includes a chemical liquid storage unit 210, a chemical liquid supply unit 230, and a supply control unit 250.
  • the chemical liquid storage unit 210 stores the chemical liquid.
  • the shape and material of the chemical storage unit 210 may vary depending on the type and composition of the chemical.
  • the chemical storage unit 210 is provided with a plurality depending on the type of the chemical liquid to store the chemical liquid by type, and has a heating means for heating the chemical liquid separately.
  • the chemical liquid supply unit 230 is positioned above the substrate S to supply the chemical liquid to the substrate S processing surface, and sprays the chemical liquid onto the substrate S.
  • the chemical liquid supply unit 230 is illustrated as a nozzle for injecting the chemical liquid to the substrate (S) processing surface, it is possible to apply a nozzle of various configurations and shapes according to the size of the substrate (S), the type of chemical liquid.
  • the supply control unit 250 connects the chemical liquid storage unit 210 and the chemical liquid supply unit 230 to guide the chemical liquid of the chemical liquid storage unit 210 to the chemical liquid supply unit 230.
  • the supply control unit 250 includes a chemical guide tube 251 and a flow control valve 253.
  • the chemical liquid guide tube 251 is formed in a tubular shape connecting both ends of the chemical liquid storage unit 210 and the chemical liquid supply unit 230, respectively, and guides the movement of the chemical liquid through a through hole formed in the inner side.
  • the flow control valve 253 is connected to the chemical liquid guide tube 251, and controls the flow rate of the chemical liquid through the chemical liquid supply unit 230.
  • the flow control valve 253 controls the flow rate of the chemical liquid moving through the chemical liquid guide tube 251 so that the chemical liquid is periodically supplied for a predetermined time.
  • the preset time refers to a time for processing the substrate S in a process step of performing an etching process of the substrate S, and time information calculated according to the type of the substrate S, a chemical liquid, or a heating temperature. Can be set in advance in the control member 500 or the like.
  • the content of the chemical liquid periodically means that the time point and the supply time of supplying the predetermined chemical liquid to the substrate S are equally repeated. Assuming that the reaction rate between the chemical liquid and the object to be treated is constant in the substrate S at a specific temperature, the injection time of the chemical liquid may be set to the same during the processing time, and the chemical liquid may be periodically supplied.
  • the reaction rate between the chemical liquid and the object to be treated is different, for example, when the residual amount of the chemical object is reduced during the treatment process, and the amount of the chemical liquid required for the reaction is reduced, the time for spraying the chemical liquid is delayed or the chemical liquid is injected. It is also possible to adjust the chemical liquid injection time and the injection time, such as to reduce the time to be, such adjustments may be stored in advance in the control member 500 with information such as time, flow rate.
  • the substrate processing apparatus 1 further includes a chemical liquid measurement member 270.
  • the chemical liquid measuring member 270 is positioned at one side of the substrate support member 100, and the amount of the chemical liquid supplied to the substrate S is separated out of the substrate S by rotation, gravity, etc. of the substrate S. Alternatively, the component is measured and the measured value is transmitted to the control member 500.
  • control member 500 has a predetermined flow rate of the chemical liquid measured by the chemical liquid measuring member 270 or less than a predetermined value, or a predetermined component content of the chemical liquid, for example, moisture or a caustic, is set in advance. If the reference value is not reached, the flow rate control valve 253 is controlled to supply the chemical liquid to the substrate S.
  • the substrate heating member 300 heats the substrate S by varying the degree of heating depending on the position at which the chemical liquid injected from the chemical liquid supply unit 230 is supplied to the substrate S. That is, the substrate heating member 300 heats the substrate S whose temperature is locally reduced by supplying the chemical liquid by varying the degree of heating according to the position of the substrate S, thereby making the temperature according to the position uniform.
  • the substrate heating member 300 includes a lamp mounting part 310 and a heating lamp part 330.
  • the lamp mounting unit 310 is positioned above the substrate S to support the heating lamp unit 330.
  • the lamp mounting portion 310 is made of a metal material, is formed in a plate shape, and is coupled to a processing chamber (not shown).
  • the heating lamp unit 330 is coupled to the lamp mounting unit 310 and includes a plurality of heating lamps 331 to adjust the output per unit area of the region corresponding to the region in which the chemical liquid is injected onto the substrate S. S) is heated.
  • the heating lamp unit 330 corresponds to a region corresponding to a region where the chemical liquid is supplied to the substrate S, that is, a portion corresponding to a portion that touches when the chemical liquid is injected onto the substrate S, and specifically, on a vertical line of the touching portion.
  • the output per unit area is controlled by adjusting the output of the heating lamp 331 located above or below.
  • the method of adjusting the output of the heating lamp unit 330 at a position corresponding to the portion supplied with the chemical liquid may be implemented in various ways. For example, among the plurality of heating lamps 331, a method of adjusting the output of some of the heating lamps 331, a method of adjusting the number of units of the heating lamp 331 per unit area, or a heating lamp 331 having a different output, size, etc. may be used. The method of application is possible.
  • Area can be concentrated to reduce the temperature unevenness of the substrate (S) due to the supply of the chemical liquid.
  • the output adjustment of the heating lamp 331, in advance determine the position in which the chemical liquid is injected from the chemical liquid supply unit 230, and adjusts the output of the heating lamp 331 for heating the corresponding position based on the determined position Or, it is also possible to adjust the output of the heating lamp 331 of the control member 500 based on the real-time temperature of the substrate (S) measured by the temperature measuring member 400 to be described later.
  • the temperature of the substrate S may be compensated by changing the arrangement of the plurality of heating lamps 331.
  • the temperature of the substrate S may be compensated by adjusting the density of the heating lamp 331, that is, the arrangement of the heating lamp 331, or by arranging heating lamps 331 having different outputs or shapes.
  • FIG 3 is a view showing a state in which the chemical liquid is injected in the substrate processing apparatus according to the first embodiment of the present invention
  • Figure 4 is a view showing a region in which the chemical liquid is injected in the substrate processing apparatus according to the first embodiment of the present invention to be.
  • FIG. 5 is a view showing a state in which the output of the heating lamp in the substrate processing apparatus according to the first embodiment of the present invention
  • Figure 6 is a density of the heating lamp in the substrate processing apparatus according to the first embodiment of the present invention
  • FIG. 7 is a view showing a different state
  • FIG. 7 is a view showing a state in which a heating lamp having a different output is applied in the substrate processing apparatus according to the first embodiment of the present invention.
  • the amount of heat dissipated in the area "A '" increases the number per unit area of the heating lamp 331b (see FIG. 6), or the heating lamps 331c and 331d having different outputs or different shapes. Can be applied to compensate for the temperature in the “A” region (see FIG. 7).
  • FIG 8 is a view showing a state in which the chemical liquid is injected in the substrate processing apparatus according to the second embodiment of the present invention
  • Figure 9 is a view showing a region in which the chemical liquid is injected in the substrate processing apparatus according to the second embodiment of the present invention to be.
  • FIG. 8 shows that the rod-shaped chemical liquid supply unit 230b extends radially from the rotational center C of the substrate S.
  • the chemical liquid is injected into the area "B" as shown in FIG. "The temperature in the zone may drop.
  • FIG. 10 is a view showing a state in which the output of the heating lamp in the substrate processing apparatus according to a second embodiment of the present invention
  • Figure 11 is a density of the heating lamp in the substrate processing apparatus according to a second embodiment of the present invention
  • 12 is a view illustrating a different state
  • FIG. 12 is a view illustrating a state in which a heating lamp having a different output is applied in the substrate processing apparatus according to the second embodiment of the present invention.
  • the output of the region “B ′” of the heating lamp 331 corresponding to the region “B” is adjusted. That is, in the second embodiment, the heating lamp 331a increases the output of the heating lamp 331a corresponding to the "B '" region to increase the output of the "B'” region (see FIG. 10), or the corresponding. Increase the density of the heating lamp 331b at the position (see FIG. 11) or apply the heating lamp 331e having a different size, shape, output, etc. to the position (see FIG. 12) to " B " Compensate for temperature drop in the area.
  • Figure 14 is a view showing a region in which the chemical liquid is injected in the substrate processing apparatus according to the third embodiment of the present invention to be.
  • FIGS. 13 and 14 a chemical liquid supply unit 230c for injecting a chemical liquid while moving along a predetermined path is shown.
  • FIG. 13 shows “C” which is a region in which the chemical liquid is injected onto the substrate S when the movable chemical liquid supply unit 230c is applied.
  • FIG. 15 is a view showing a state in which the output of the heating lamp in the substrate processing apparatus according to a third embodiment of the present invention
  • Figure 16 is a density of the heating lamp in the substrate processing apparatus according to a third embodiment of the present invention
  • FIG. 17 is a view showing a different state
  • FIG. 17 is a view showing a state in which a heating lamp having a different output is applied in the substrate processing apparatus according to the third embodiment of the present invention.
  • the output of the "C '" region of the heating lamp 331 corresponding to the "C” region is adjusted. That is, in the third embodiment, the heating lamp 331 increases the output of the heating lamp 331a corresponding to the "C '" region to increase the output of the "C'” region (see FIG. 15), or Increase the density of the heating lamp 331b at the position (see FIG. 16) or apply the heating lamp 331f having different sizes, shapes, outputs, etc. to the position (see FIG. 17) to " C " Compensate for temperature drop in the area.
  • the substrate processing apparatus 1 further includes a temperature measuring member 400 and a control member 500.
  • the temperature measuring member 400 measures the temperature of the substrate S and transmits the measured temperature value to the control member 500.
  • the temperature measuring member 400 is illustrated as a pyrometer and includes a plurality of temperature measuring parts 410 mounted on the chuck table 110 to measure the temperature of the substrate S.
  • the control member 500 adjusts the output of the heating lamp 331 according to the temperature distribution of the substrate S measured by the temperature measuring member 400.
  • the control member 500 is previously designated or heated in such a manner as to adjust the power applied to the heating lamp 331 based on the temperature of each part of the substrate S received from the temperature measuring member 400.
  • the output of the lamp 331 is adjusted.
  • FIG. 18 is a view showing a substrate processing method according to an embodiment of the present invention.
  • a substrate processing method includes a processing preparation step (S100), a processing process step (S200), a substrate cleaning step (S300), and a substrate transfer step (S400). do.
  • the process preparation step S100 corresponds to a preparation step for etching the substrate S, or the like.
  • the substrate S is mounted on the substrate support member 100 positioned inside the processing chamber.
  • the chuck pin 115 is moved to the standby position, and the substrate S is seated on the upper side of the fixing pin 113, and then the chuck pin 115 is moved to the support position.
  • the substrate S is seated on the upper side of the fixing pin 113, and then the chuck pin 115 is moved to the support position.
  • the substrate S110 In order to prevent the substrate S from being separated during the process (S110).
  • control member 500 drives the driving unit 150 to rotate the chuck table 110 together with the rotation shaft 130 (S130).
  • the control member 500 controls the flow control valve 253 to inject the chemical liquid to the substrate (S) through the chemical liquid supply unit 230.
  • the chemical liquid is applied to the substrate S in such a manner that the chemical liquid is sprayed onto the substrate S while the substrate S is rotated (S150).
  • the processing step S200 corresponds to a step of performing an etching process on the substrate S.
  • FIG. When the chemical liquid is applied, the control member 500 heats the substrate S by using the substrate heating member 300. When the substrate S is heated in a state in which a chemical solution including a corrosive material is applied, an etching process is performed (S210).
  • 19 is a view showing supply and heating of a chemical liquid in a substrate processing apparatus and a substrate processing method according to an embodiment of the present invention.
  • the chemical liquid is intermittently supplied to the substrate S in a processing step which is an etching process. If the chemical liquid reacts with the processing object during the treatment process, or if the chemical liquid flows out of the substrate S and the amount of the chemical liquid is lower than the required value, the treatment process of the substrate S may become uneven.
  • the control member 500 controls the chemical liquid supply member 200 in the processing step to periodically supply the chemical liquid to the substrate S at a predetermined time, or the chemical liquid measurement member 270 for measuring the remaining amount of the chemical component or the chemical liquid. Based on the measured values measured in the above), the components of the chemical liquid remaining on the substrate S or the remaining amount of the chemical liquid are analyzed, and when the chemical liquid is below the set value, the chemical liquid is sprayed onto the substrate S. The heating of the substrate S and the intermittent supply of the chemical liquid proceed for a set process time.
  • the temperature of the region where the chemical liquid is supplied to the substrate S may be lower than that of other portions.
  • the output of the heating lamp 331 at the corresponding position is changed to compensate for the temperature of the portion to which the chemical liquid is supplied.
  • the control member 500 supplies a cleaning agent or the like to the substrate S to clean the substrate S (S300), and when the cleaning is completed, the substrate conveying apparatus (not shown)
  • the substrate S is transferred to the outside of the processing chamber by using the step S400.
  • the substrate processing apparatus 1 compensates the temperature by adjusting the output of the heating lamp 331 at a position corresponding to the site where the chemical liquid is supplied, thereby maintaining the temperature of the substrate S uniformly. There is.
  • the substrate processing apparatus 1 adjusts the output of the heating lamp unit 330 by using the temperature measuring member 400 and the control member 500, thereby realizing the temperature unevenness of the substrate S in real time. I can adjust it.
  • the substrate processing apparatus 1 and the substrate processing method supply the chemical liquid to the substrate S intermittently, thereby ensuring uniformity of the processing of the substrate S, and the substrate S due to the lack of the chemical liquid. By preventing the deterioration of the quality), it is possible to enable a stable substrate (S) processing step.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

Disclosed is a substrate treatment apparatus. A substrate treatment apparatus comprises: a substrate support member for supporting a substrate; a liquid chemical supply member for intermittently supplying liquid chemical to the substrate; and a substrate heating member for heating the substrate.

Description

기판 처리장치와 기판 처리방법Substrate Processing Equipment and Substrate Processing Method
본 발명은 기판 처리장치와 기판 처리방법에 관한 것으로, 보다 상세하게는 습식 매엽 공정에 있어서, 기판의 온도를 균일하게 유지할 수 있으며, 약액의 공급을 조절하여 기판 처리공정의 균일성 및 기판의 품질을 확보할 수 있는 기판 처리장치와 기판 처리방법에 관한 것이다. The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, in a wet sheet process, the temperature of the substrate can be maintained uniformly, and the supply of the chemical liquid is controlled to uniformize the substrate processing process and the quality of the substrate. It relates to a substrate processing apparatus and a substrate processing method that can ensure the.
기판 처리장치는 공정에 따라 기판을 가열하는 방식이 달라진다. 건식 공정에는 적외선 램프를 이용한 직접 가열이나 열 손실을 방지하기 위한 밀폐식 구조 등을 적용하고 있으며, 습식 공정에는 두 종류 이상의 액체를 혼합하여 화학 반응열을 이용하거나, 액체를 직접 가열하여 공급하는 방식 등이 적용된다.The substrate processing apparatus varies in the manner of heating the substrate depending on the process. In the dry process, direct heating using an infrared lamp or a sealed structure to prevent heat loss is applied.In the wet process, two or more liquids are mixed to use heat of chemical reaction, or a liquid is directly heated and supplied. This applies.
또한, 건식 공정 중 배치 공정의 경우 대류열과 복사열을 주로 이용하며, 매엽 공정에서는 복사열을 이용하여 열 에너지를 공급한다. 습식 공정 중 여러 장의 기판을 동시에 처리하는 배치 공정의 경우 액체를 직접 가열하여 공급하는 방식이 적용되고 있으며, 개별 기판을 처리하는 매엽 공정의 경우에는 화학 반응열을 이용한 방식이 주로 적용된다.In addition, convective heat and radiant heat are mainly used in the batch process in the dry process, and thermal energy is supplied in the sheetfed process using radiant heat. In the case of a batch process of simultaneously processing a plurality of substrates in a wet process, a method of directly heating and supplying a liquid is applied. In the case of a sheetfed process of treating individual substrates, a method using a chemical reaction heat is mainly applied.
일반적인 건식 매엽 공정은 적외선 램프를 이용하여 단시간 내에 많은 열 에너지를 공급하여 공정을 완료한다. 일반적으로 이러한 공정을 Rapid Thermal Process(RTP)라고 한다. RTP 공정의 경우, 기판을 균일한 열 에너지를 이용하여 가열하는 경우 기판의 중심부 온도가 주변부 온도보다 높은 경향을 보인다. The general dry sheeting process uses an infrared lamp to supply a lot of heat energy in a short time to complete the process. This process is commonly called Rapid Thermal Process (RTP). In the case of the RTP process, when the substrate is heated using uniform thermal energy, the central temperature of the substrate tends to be higher than the peripheral temperature.
반면, 습식 매엽 공정의 경우, 기판에 약액이 공급되므로 약액이 공급되는 영역의 온도가 하강하여 기판의 온도가 위치에 따라 불균일해지는 문제점이 있으며, 특정 성분의 증발, 이탈 등에 의한 약액의 성분 변화 또는 기판에 잔류하는 약액의 조절의 어려움 등에 의하여 기판의 처리 공정의 균일성을 확보하지 못하여 기판의 품질이 떨어지는 문제점이 있다. On the other hand, in the case of the wet sheet process, since the chemical liquid is supplied to the substrate, there is a problem that the temperature of the region where the chemical liquid is supplied decreases and thus the temperature of the substrate is uneven according to the position. There is a problem in that the quality of the substrate is deteriorated due to difficulty in controlling the chemical liquid remaining on the substrate, thereby preventing uniformity of the substrate processing process.
본 발명의 배경 기술은, 대한민국 공개특허공보 제2007-0094674호(2007.09.21 공개, 발명의 명칭: 매엽식 기판 처리장치) 및 대한민국 공개특허공보 제2014-0053823호(2014.05.08 공개, 발명의 명칭: 액처리 장치 및 액처리 방법)에 개시되어 있다. Background art of the present invention, Republic of Korea Patent Publication No. 2007-0094674 (published on September 21, 2007, name of the invention: sheet type substrate processing apparatus) and Republic of Korea Patent Publication No. 2014-0053823 (2014.05.08 publication, the invention of Name: liquid treatment apparatus and liquid treatment method).
본 발명은 상기와 같은 문제점을 개선하기 위해 안출된 것으로서, 약액이 공급되는 부위의 온도를 보상하여 기판의 온도를 전체적으로 균일하게 유지할 수 있으며, 약액의 공급을 조절하여 부식재 등의 부족에 의한 기판 처리공정의 불균일성을 해소하고, 기판 처리공정에 필요한 약액을 적절하게 공급할 수 있는 기판 처리장치와 기판 처리방법을 제공하는 데 그 목적이 있다. The present invention has been made in order to improve the above problems, it is possible to compensate the temperature of the part where the chemical solution is supplied to maintain the temperature of the substrate as a whole, and to adjust the supply of the chemical liquid substrate due to the lack of corrosive materials, etc. It is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of eliminating the nonuniformity of the processing step and appropriately supplying the chemical liquid required for the substrate processing step.
본 발명에 따른 기판 처리장치는, 기판을 지지하는 기판지지부재; 상기 기판에 약액을 간헐적으로 공급하는 약액공급부재; 및 상기 기판을 가열하는 기판가열부재;를 포함하는 것을 특징으로 한다. Substrate processing apparatus according to the present invention, the substrate support member for supporting the substrate; A chemical liquid supply member supplying chemical liquids intermittently to the substrate; And a substrate heating member for heating the substrate.
본 발명에서 상기 약액공급부재는, 약액이 저장되는 약액저장부; 약액을 상기 기판에 분사하는 약액공급부; 및 상기 약액저장부와 상기 약액공급부를 연결하며, 약액의 이동을 안내하고, 기판처리공정 시 상기 약액저장부의 약액이 상기 약액공급부에 간헐적으로 공급되도록 하는 공급조절부;를 포함하는 것을 특징으로 한다. In the present invention, the chemical liquid supply member, the chemical liquid storage unit for storing the chemical liquid; A chemical solution supplying part for injecting a chemical solution onto the substrate; And a supply control unit connecting the chemical liquid storage unit and the chemical liquid supply unit to guide the movement of the chemical liquid and intermittently supplying the chemical liquid of the chemical liquid storage unit to the chemical liquid supply unit during a substrate processing process. .
본 발명에서 상기 공급조절부는, 상기 약액저장부와 상기 약액공급부를 연결하여, 약액의 이동을 안내하는 약액안내관; 및 상기 약액안내관에 연결되며, 상기 약액공급부재에 전달되는 약액의 유량을 조절하는 유량조절밸브;를 포함하는 것을 특징으로 한다. In the present invention, the supply control unit, the chemical liquid storage unit and the chemical liquid supply unit, the chemical liquid guide tube for guiding the movement of the chemical liquid; And a flow rate control valve connected to the chemical liquid guide tube and controlling a flow rate of the chemical liquid delivered to the chemical liquid supply member.
본 발명에서 상기 유량조절밸브는, 기 설정된 시간 동안 주기적으로 약액이 공급되도록, 상기 약액안내관을 통하여 이동하는 약액의 유량을 제어하는 것을 특징으로 한다. In the present invention, the flow control valve is characterized in that for controlling the flow rate of the chemical liquid moving through the chemical liquid guide tube, so that the chemical liquid is periodically supplied for a predetermined time.
본 발명에 따른 기판 처리장치는, 상기 기판지지부재의 일측에 위치하여 상기 기판의 외측으로 이탈되는 약액의 유량 또는 성분비를 측정하고, 측정값을 제어부재에 전달하는 약액측정부재;를 더 포함하고, 상기 제어부재는 상기 약액측정부재에서 측정한 약액의 유량 또는 성분비가 설정값 이하에 해당하는 경우 상기 유량조절밸브를 제어하여 상기 기판에 약액을 공급하는 것을 특징으로 한다. The substrate processing apparatus according to the present invention further includes: a chemical liquid measurement member positioned on one side of the substrate support member to measure a flow rate or a component ratio of the chemical liquid separated from the outside of the substrate, and to transmit a measured value to a control member. The control member may control the flow rate control valve to supply the chemical liquid to the substrate when the flow rate or the component ratio of the chemical liquid measured by the chemical liquid measuring member corresponds to a set value or less.
본 발명에서 상기 기판가열부재는, 상기 약액공급부재에서 공급된 약액이 상기 기판에 공급되는 위치에 따라 가열 정도를 달리하여 상기 기판을 가열하는 것을 특징으로 한다. In the present invention, the substrate heating member is characterized in that for heating the substrate by varying the degree of heating according to the position where the chemical liquid supplied from the chemical liquid supply member is supplied to the substrate.
본 발명에서 상기 기판가열부재는, 상기 기판의 일측에 위치하는 램프장착부; 및 상기 램프장착부에 위치하고, 복수 개의 가열램프를 포함하며, 상기 기판에 약액이 분사되는 영역에 대응하는 영역의 단위면적당 출력을 조절하여 상기 기판을 가열하는 가열램프부;를 포함하는 것을 특징으로 한다. The substrate heating member in the present invention, the lamp mounting portion located on one side of the substrate; And a heating lamp unit positioned in the lamp mounting unit and including a plurality of heating lamps, the heating lamp unit heating the substrate by adjusting an output per unit area of a region corresponding to the region in which the chemical liquid is injected onto the substrate. .
본 발명에서 상기 가열램프부는, 제어부재가 약액이 상기 기판에 공급되는 영역에 대응되는 영역을 가열하는 상기 가열램프의 출력을 조절하여, 상기 가열램프의 위치 별 출력을 조절하는 것을 특징으로 한다. In the present invention, the heating lamp unit, the control member to control the output of the heating lamp for heating the area corresponding to the area supplied with the chemical liquid to the substrate, characterized in that for controlling the output for each position of the heating lamp.
본 발명에서 상기 가열램프부는, 제어부재가 약액이 상기 기판에 공급되는 영역에 대응되는 영역을 가열하는 상기 가열램프의 단위면적당 개수를 조절하여, 상기 가열램프의 위치 별 출력을 조절하는 것을 특징으로 한다. In the present invention, the heating lamp unit, the control member material for controlling the number of unit of the heating lamp for heating the area corresponding to the area supplied with the chemical liquid to the substrate, characterized in that for controlling the output for each position of the heating lamp. do.
본 발명에 따른 기판 처리장치는, 상기 기판의 온도를 측정하는 온도측정부재;를 더 포함하고, 상기 제어부재가 상기 온도측정부재에서 측정한 상기 기판의 온도 분포에 따라 상기 가열램프의 출력을 조절하는 것을 특징으로 한다. The substrate processing apparatus according to the present invention further includes a temperature measuring member for measuring the temperature of the substrate, wherein the control member adjusts the output of the heating lamp according to the temperature distribution of the substrate measured by the temperature measuring member. Characterized in that.
본 발명에 따른 기판 처리방법은, 기판을 기판지지부재에 안착하고, 상기 기판에 약액을 도포하는 처리준비단계; 및 제어부재가 기판가열부재 및 약액공급부재를 제어하여, 상기 기판을 가열하면서 약액을 간헐적으로 공급하는 처리공정단계;를 포함하는 것을 특징으로 한다. Substrate processing method according to the present invention, the substrate is mounted on the substrate support member, the preparation step of applying a chemical to the substrate; And a processing step of controlling the substrate heating member and the chemical liquid supply member to supply the chemical liquid intermittently while heating the substrate.
본 발명에서 상기 처리준비단계는, 상기 기판을 상기 기판지지부재에 안착하는 기판안착단계; 상기 기판지지부재에 안착된 상기 기판을 회전시키는 기판회전단계; 및 상기 기판에 약액을 공급하여 상기 기판에 약액을 도포하는 기판도포단계;를 포함하는 것을 특징으로 한다. In the present invention, the process preparation step, the substrate seating step for mounting the substrate on the substrate support member; A substrate rotating step of rotating the substrate seated on the substrate supporting member; And a substrate coating step of supplying the chemical liquid to the substrate to apply the chemical liquid to the substrate.
본 발명에서 상기 처리공정단계는, 상기 기판의 일측에 위치한 약액측정부재가 상기 기판에서 이탈되는 약액의 양 또는 성분비를 측정하는 단계; 및 상기 제어부재가 상기 약액측정부재에서 측정한 약액의 양 또는 성분비를 분석하고, 설정된 값 이하에 해당하는 경우, 상기 약액공급부재를 제어하여 약액을 상기 기판에 공급하는 단계;를 포함하는 것을 특징으로 한다.In the present invention, the processing step, the chemical liquid measuring member located on one side of the substrate measuring the amount or component ratio of the chemical liquid is separated from the substrate; And analyzing, by the controller member, the amount or component ratio of the chemical liquid measured by the chemical liquid measurement member, and controlling the chemical liquid supply member to supply the chemical liquid to the substrate when the amount falls below a set value. It is done.
본 발명에서 상기 처리공정단계는, 상기 기판을 가열하면서, 약액을 상기 기판에 주기적으로 공급하는 단계; 및 상기 제어부재가 기 설정된 처리공정시간의 도과 여부를 판단하고, 처리공정시간 도과 시 상기 기판의 가열 및 약액의 공급을 중단하는 단계;를 포함하는 것을 특징으로 한다. In the present invention, the processing step, the step of periodically supplying a chemical liquid to the substrate while heating the substrate; And determining, by the control member, whether or not the predetermined processing time has elapsed, and stopping the heating of the substrate and the supply of the chemical liquid when the processing time has elapsed.
본 발명에서 상기 처리공정단계는, 상기 제어부재가 상기 기판가열부재를 제어하여, 상기 약액공급부재에서 공급된 약액이 상기 기판에 공급되는 위치에 따라 가열 정도를 달리하여 상기 기판을 가열하는 단계;를 포함하는 것을 특징으로 한다. In the present invention, the processing step, the control member to control the substrate heating member, by heating the substrate by varying the degree of heating depending on the position where the chemical liquid supplied from the chemical liquid supply member is supplied to the substrate; Characterized in that it comprises a.
본 발명에 따른 기판 처리장치와 기판 처리방법은, 약액이 공급되는 부위에 대응되는 위치의 가열램프부의 출력을 조절하여 온도를 보상함으로써, 기판의 온도를 균일하게 유지할 수 있는 효과가 있다.The substrate processing apparatus and the substrate processing method according to the present invention have the effect of maintaining the temperature of the substrate uniformly by adjusting the output of the heating lamp unit at the position corresponding to the portion to which the chemical liquid is supplied to compensate for the temperature.
또한 본 발명은, 온도측정부재 및 제어부재를 이용하여 가열램프부의 출력을 조절함으로써, 기판의 온도 불균일을 실시간으로 조정할 수 있다. In addition, the present invention can adjust the temperature unevenness of the substrate in real time by adjusting the output of the heating lamp unit using the temperature measuring member and the control member.
또한, 본 발명은 약액을 간헐적으로 공급함으로써, 기판 처리공정의 균일성을 확보하고, 약액의 부족 등에 의한 기판의 품질 저하를 방지하여, 안정적인 기판 처리공정을 가능하게 한다. In addition, the present invention by intermittently supplying the chemical liquid to ensure uniformity of the substrate processing step, to prevent the deterioration of the quality of the substrate due to the lack of the chemical liquid, and to enable a stable substrate processing step.
또한, 본 발명은 약액저장부와 약액공급부를 연결하는 공급조절부에서 약액의 공급을 제어하여, 기판으로의 약액의 간헐적 공급을 가능하게 한다. In addition, the present invention controls the supply of the chemical liquid in the supply control unit connecting the chemical storage unit and the chemical liquid supply, thereby enabling the intermittent supply of the chemical liquid to the substrate.
또한, 본 발명은 기 설정된 시간 동안 주기적으로 약액이 공급되도록 하여, 약액의 부족을 미연에 방지하여 공정의 균일성을 확보한다. In addition, the present invention is to periodically supply the chemical liquid for a predetermined time, to prevent the lack of the chemical in advance to ensure uniformity of the process.
또한, 본 발명은 약액측정부재에서 약액의 양, 성분을 측정하고, 이를 기초로 약액의 공급을 제어하므로 약액의 양, 특정 성분의 부족을 방지한다. In addition, the present invention measures the amount, the component of the chemical liquid in the chemical liquid measurement member, and controls the supply of the chemical liquid on the basis of this to prevent the lack of the amount of the chemical liquid, specific components.
도 1은 본 발명의 일 실시예에 따른 기판 처리장치의 정면도이다. 1 is a front view of a substrate processing apparatus according to an embodiment of the present invention.
도 2는 본 발명의 일 실시예에 따른 기판 처리장치에서 약액이 공급되는 상태를 나타내는 도면이다. 2 is a view showing a state in which the chemical liquid is supplied in the substrate processing apparatus according to an embodiment of the present invention.
도 3은 본 발명의 제1 실시예에 따른 기판 처리장치에서 약액이 분사되는 상태를 나타내는 도면이다. 3 is a view showing a state in which the chemical liquid is injected in the substrate processing apparatus according to the first embodiment of the present invention.
도 4는 본 발명의 제1 실시예에 따른 기판 처리장치에서 약액이 분사되는 영역을 나타내는 도면이다. 4 is a view showing a region in which chemical liquid is injected in the substrate processing apparatus according to the first embodiment of the present invention.
도 5는 본 발명의 제1 실시예에 따른 기판 처리장치에서 가열램프의 출력을 달리하는 상태를 나타내는 도면이다. 5 is a view showing a state in which the output of the heating lamp is different in the substrate processing apparatus according to the first embodiment of the present invention.
도 6은 본 발명의 제1 실시예에 따른 기판 처리장치에서 가열램프의 밀도를 달리하는 상태를 나타내는 도면이다. 6 is a view showing a state in which the density of the heating lamp is different in the substrate processing apparatus according to the first embodiment of the present invention.
도 7은 본 발명의 제1 실시예에 따른 기판 처리장치에서 출력이 상이한 가열램프가 적용된 상태를 나타내는 도면이다. FIG. 7 is a view showing a state in which a heating lamp having a different output is applied in the substrate processing apparatus according to the first embodiment of the present invention.
도 8은 본 발명의 제2 실시예에 따른 기판 처리장치에서 약액이 분사되는 상태를 나타내는 도면이다. 8 is a view showing a state in which the chemical liquid is injected in the substrate processing apparatus according to the second embodiment of the present invention.
도 9는 본 발명의 제2 실시예에 따른 기판 처리장치에서 약액이 분사되는 영역을 나타내는 도면이다. 9 is a view showing a region in which chemical liquid is injected in the substrate processing apparatus according to the second embodiment of the present invention.
도 10은 본 발명의 제2 실시예에 따른 기판 처리장치에서 가열램프의 출력을 달리하는 상태를 나타내는 도면이다. 10 is a view showing a state in which the output of the heating lamp is different in the substrate processing apparatus according to the second embodiment of the present invention.
도 11은 본 발명의 제2 실시예에 따른 기판 처리장치에서 가열램프의 밀도를 달리하는 상태를 나타내는 도면이다. 11 is a view showing a state in which the density of the heating lamp is different in the substrate processing apparatus according to the second embodiment of the present invention.
도 12는 본 발명의 제2 실시예에 따른 기판 처리장치에서 출력이 상이한 가열램프가 적용된 상태를 나타내는 도면이다. 12 is a view showing a state in which a heating lamp having a different output is applied in the substrate processing apparatus according to the second embodiment of the present invention.
도 13은 본 발명의 제3 실시예에 따른 기판 처리장치에서 약액이 분사되는 상태를 나타내는 도면이다. 13 is a view showing a state in which a chemical liquid is injected in the substrate processing apparatus according to the third embodiment of the present invention.
도 14는 본 발명의 제3 실시예에 따른 기판 처리장치에서 약액이 분사되는 영역을 나타내는 도면이다. 14 is a view showing a region in which chemical liquid is injected in the substrate processing apparatus according to the third embodiment of the present invention.
도 15는 본 발명의 제3 실시예에 따른 기판 처리장치에서 가열램프의 출력을 달리하는 상태를 나타내는 도면이다. 15 is a view showing a state in which the output of the heating lamp is different in the substrate processing apparatus according to the third embodiment of the present invention.
도 16은 본 발명의 제3 실시예에 따른 기판 처리장치에서 가열램프의 밀도를 달리하는 상태를 나타내는 도면이다. 16 is a view showing a state in which the density of the heating lamp is different in the substrate processing apparatus according to the third embodiment of the present invention.
도 17은 본 발명의 제3 실시예에 따른 기판 처리장치에서 출력이 상이한 가열램프가 적용된 상태를 나타내는 도면이다. 17 is a diagram illustrating a state in which a heating lamp having a different output is applied in a substrate processing apparatus according to a third embodiment of the present invention.
도 18은 본 발명의 일 실시예에 따른 기판 처리방법을 나타내는 도면이다. 18 is a view showing a substrate processing method according to an embodiment of the present invention.
도 19는 본 발명의 일 실시예에 따른 기판 처리장치 및 기판 처리방법에서 약액의 공급 및 가열을 나타내는 도면이다. 19 is a view showing supply and heating of a chemical liquid in a substrate processing apparatus and a substrate processing method according to an embodiment of the present invention.
이하, 첨부된 도면들을 참조하여 본 발명에 따른 기판 처리장치의 일 실시예를 설명한다. 이 과정에서 도면에 도시된 선들의 두께나 구성요소의 크기 등은 설명의 명료성과 편의상 과장되게 도시되어 있을 수 있다.Hereinafter, an embodiment of a substrate processing apparatus according to the present invention will be described with reference to the accompanying drawings. In this process, the thickness of the lines or the size of the components shown in the drawings may be exaggerated for clarity and convenience of description.
또한, 후술되는 용어들은 본 발명에서의 기능을 고려하여 정의된 용어들로서 이는 사용자, 운용자의 의도 또는 관례에 따라 달라질 수 있다. 그러므로, 이러한 용어들에 대한 정의는 본 명세서 전반에 걸친 내용을 토대로 내려져야 할 것이다.In addition, terms to be described below are terms defined in consideration of functions in the present invention, which may vary according to the intention or convention of a user or an operator. Therefore, definitions of these terms should be made based on the contents throughout the specification.
도 1은 본 발명의 일 실시예에 따른 기판 처리장치의 정면도이고, 도 2는 본 발명의 일 실시예에 따른 기판 처리장치에서 약액이 공급되는 상태를 나타내는 도면이다. 1 is a front view of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a view illustrating a state in which a chemical solution is supplied in a substrate processing apparatus according to an embodiment of the present invention.
도 1 및 2를 참조하면, 본 발명의 일 실시예에 따른 기판 처리장치(1)는 기판지지부재(100), 약액공급부재(200) 및 기판가열부재(300)를 포함한다. 1 and 2, the substrate processing apparatus 1 according to an embodiment of the present invention includes a substrate support member 100, a chemical liquid supply member 200, and a substrate heating member 300.
기판지지부재(100)는 기판(S)을 지지하며, 기판(S)을 회전시킨다. 본 실시예에서 기판지지부재(100)는 척테이블부(110), 회전축부(130) 및 구동부(150)를 포함한다. The substrate supporting member 100 supports the substrate S and rotates the substrate S. In this embodiment, the substrate support member 100 includes a chuck table 110, a rotation shaft 130, and a driver 150.
척테이블부(110)는 기판(S)을 지지한다. 본 실시예에서 척테이블부(110)는 척테이블(111), 고정핀(113) 및 척핀(115)을 포함한다. The chuck table unit 110 supports the substrate (S). In this embodiment, the chuck table 110 includes a chuck table 111, a fixing pin 113, and a chuck pin 115.
척테이블(111)은 중심부가 회전축부(130)에 결합되어, 회전축부(130)와 함께 회전한다. 본 실시예에서 척테이블(111)은 판 형상이며, 상측에 고정핀(113) 및 척핀(115)이 위치한다. The central portion of the chuck table 111 is coupled to the rotation shaft 130, and rotates together with the rotation shaft 130. In the present embodiment, the chuck table 111 has a plate shape, and the fixing pin 113 and the chuck pin 115 are positioned on the upper side.
고정핀(113)은 하단부가 척테이블(111)에 볼팅 등의 방식으로 결합되고, 상단부에 기판(S)이 안착된다. The fixing pin 113 has a lower end coupled to the chuck table 111 by bolting or the like, and the substrate S is seated on the upper end.
척핀(115)은 기판(S)의 둘레부를 지지하여 기판(S)의 이탈을 방지한다. 척핀(115)은 이동부(미도시) 등에 의하여 지지위치와 대기위치 사이를 이동한다. 여기서 지지위치는 척핀(115)이 기판(S)의 둘레부에 접촉되는 위치를 의미하고, 대기위치는 기판(S)을 안착 또는 탈거할 수 있도록 기판(S)의 둘레부에서 척핀(115)이 이격되는 위치를 의미한다. The chuck pin 115 supports the circumference of the substrate S to prevent the substrate S from being separated. The chuck pin 115 moves between the support position and the standby position by a moving part (not shown). Here, the support position means a position where the chuck pin 115 is in contact with the periphery of the substrate S, and the standby position is the chuck pin 115 at the periphery of the substrate S to allow the substrate S to be seated or removed. This means the location is spaced.
회전축부(130)는 척테이블(111)의 회전중심에 연결되며 구동부(150)에 의하여 척테이블부(110)와 함께 회전된다. The rotary shaft 130 is connected to the center of rotation of the chuck table 111 and is rotated together with the chuck table 110 by the driving unit 150.
구동부(150)는 전기모터 등을 포함하여, 외부에서 인가되는 전기에너지를 회전에너지로 전환하고, 이를 이용하여 회전축부(130)를 회전시킨다. The driving unit 150 includes an electric motor and the like, converts electrical energy applied from the outside into rotational energy, and rotates the rotation shaft unit 130 using the rotational energy.
약액공급부재(200)는 기판(S)에 약액을 공급한다. 본 실시예에서 약액공급부재(200)는 약액저장부(210), 약액공급부(230) 및 공급조절부(250)를 포함한다. The chemical liquid supply member 200 supplies the chemical liquid to the substrate S. In the present embodiment, the chemical liquid supply member 200 includes a chemical liquid storage unit 210, a chemical liquid supply unit 230, and a supply control unit 250.
약액저장부(210)는 약액이 저장된다. 본 실시예에서 약액저장부(210)의 형상 및 재질 등은 약액의 종류 및 성분 등에 따라 달라질 수 있다. 또한, 약액저장부(210)는 약액의 종류에 따라 복수 개 구비되어 약액을 종류별로 저장할 수 있으며, 약액을 별도로 가열할 수 있는 가열수단을 구비한다. The chemical liquid storage unit 210 stores the chemical liquid. In the present embodiment, the shape and material of the chemical storage unit 210 may vary depending on the type and composition of the chemical. In addition, the chemical storage unit 210 is provided with a plurality depending on the type of the chemical liquid to store the chemical liquid by type, and has a heating means for heating the chemical liquid separately.
약액공급부(230)는 기판(S) 처리면에 약액을 공급할 수 있도록 기판(S)의 상측에 위치하며, 약액을 기판(S)에 분사한다. 본 실시예에서 약액공급부(230)는 약액을 기판(S) 처리면으로 분사하는 노즐로 예시되며, 기판(S)의 크기, 약액의 종류 등에 따라 다양한 구성 및 형상의 노즐을 적용할 수 있다. The chemical liquid supply unit 230 is positioned above the substrate S to supply the chemical liquid to the substrate S processing surface, and sprays the chemical liquid onto the substrate S. In this embodiment, the chemical liquid supply unit 230 is illustrated as a nozzle for injecting the chemical liquid to the substrate (S) processing surface, it is possible to apply a nozzle of various configurations and shapes according to the size of the substrate (S), the type of chemical liquid.
공급조절부(250)는 약액저장부(210)와 약액공급부(230)를 연결하여, 약액저장부(210)의 약액이 약액공급부(230)로 공급되도록 안내한다. 본 실시예에서 공급조절부(250)는 약액안내관(251) 및 유량조절밸브(253)를 포함한다. The supply control unit 250 connects the chemical liquid storage unit 210 and the chemical liquid supply unit 230 to guide the chemical liquid of the chemical liquid storage unit 210 to the chemical liquid supply unit 230. In the present embodiment, the supply control unit 250 includes a chemical guide tube 251 and a flow control valve 253.
약액안내관(251)은 양단부가 각각 약액저장부(210)와 약액공급부(230)를 연결하는 관 형상으로 형성되며, 내측에 형성된 통공을 통하여 약액의 이동을 안내한다. The chemical liquid guide tube 251 is formed in a tubular shape connecting both ends of the chemical liquid storage unit 210 and the chemical liquid supply unit 230, respectively, and guides the movement of the chemical liquid through a through hole formed in the inner side.
유량조절밸브(253)는 약액안내관(251)에 연결되며, 약액공급부(230)를 통한 약액의 유량을 조절한다. The flow control valve 253 is connected to the chemical liquid guide tube 251, and controls the flow rate of the chemical liquid through the chemical liquid supply unit 230.
본 실시예에서 유량조절밸브(253)는, 기 설정된 시간 동안 주기적으로 약액이 공급되도록, 약액안내관(251)을 통하여 이동하는 약액의 유량을 제어한다. 여기서 기 설정된 시간은 기판(S)의 식각 처리 등을 수행하는 처리공정단계에서 기판(S)의 처리를 위한 시간을 의미하며, 기판(S)의 종류, 약액 또는 가열 온도 등에 따라 계산된 시간정보를 제어부재(500) 등에 미리 설정할 수 있다. In the present embodiment, the flow control valve 253 controls the flow rate of the chemical liquid moving through the chemical liquid guide tube 251 so that the chemical liquid is periodically supplied for a predetermined time. Herein, the preset time refers to a time for processing the substrate S in a process step of performing an etching process of the substrate S, and time information calculated according to the type of the substrate S, a chemical liquid, or a heating temperature. Can be set in advance in the control member 500 or the like.
또한, 주기적으로 약액이 공급되는 내용은 기판(S)에 소정의 약액이 공급되는 시점 및 공급시간을 동일하게 반복하는 것을 의미한다. 특정온도의 기판(S)에서 약액과 피처리물 사이의 반응속도 등이 일정하다고 가정하면, 약액의 분사시점을 처리공정 시간 동안에 동일하게 설정하고, 약액을 주기적으로 공급할 수 있다. In addition, the content of the chemical liquid periodically means that the time point and the supply time of supplying the predetermined chemical liquid to the substrate S are equally repeated. Assuming that the reaction rate between the chemical liquid and the object to be treated is constant in the substrate S at a specific temperature, the injection time of the chemical liquid may be set to the same during the processing time, and the chemical liquid may be periodically supplied.
또한, 약액과 피처리물 사이의 반응속도가 달라지는 경우, 예를 들어 처리 공정 동안 피처리물의 잔량이 줄어들어, 반응에 필요한 약액의 양이 줄어드는 경우에는 약액을 분사하는 시점을 늦추거나, 약액을 분사하는 시간을 줄이는 등 약액 분사 시점 및 분사시간을 조정하는 것도 가능하며, 이러한 조정 내용은 시간, 유량 등의 정보로 제어부재(500)에 미리 저장될 수 있다. In addition, when the reaction rate between the chemical liquid and the object to be treated is different, for example, when the residual amount of the chemical object is reduced during the treatment process, and the amount of the chemical liquid required for the reaction is reduced, the time for spraying the chemical liquid is delayed or the chemical liquid is injected. It is also possible to adjust the chemical liquid injection time and the injection time, such as to reduce the time to be, such adjustments may be stored in advance in the control member 500 with information such as time, flow rate.
본 실시예에서 기판 처리장치(1)는 약액측정부재(270)를 더 포함한다. In the present embodiment, the substrate processing apparatus 1 further includes a chemical liquid measurement member 270.
약액측정부재(270)는 기판지지부재(100)의 일측에 위치하여, 기판(S)에 공급된 약액이 기판(S)의 회전, 중력 등에 의하여 기판(S)의 외측으로 이탈되는 약액의 양 또는 성분을 측정하고, 측정값을 제어부재(500)에 전달한다. The chemical liquid measuring member 270 is positioned at one side of the substrate support member 100, and the amount of the chemical liquid supplied to the substrate S is separated out of the substrate S by rotation, gravity, etc. of the substrate S. Alternatively, the component is measured and the measured value is transmitted to the control member 500.
본 실시예에서 제어부재(500)는 약액측정부재(270)에서 측정한 약액의 유량이 설정값 이하에 해당하는 경우, 또는 약액 중 특정 성분, 예를 들어 수분 또는 부식제 등의 성분 함량이 미리 설정된 기준치에 미달하는 경우, 유량조절밸브(253)를 제어하여 기판(S)에 약액을 공급한다. In the present embodiment, the control member 500 has a predetermined flow rate of the chemical liquid measured by the chemical liquid measuring member 270 or less than a predetermined value, or a predetermined component content of the chemical liquid, for example, moisture or a caustic, is set in advance. If the reference value is not reached, the flow rate control valve 253 is controlled to supply the chemical liquid to the substrate S.
기판가열부재(300)는 약액공급부(230)에서 분사된 약액이 기판(S)에 공급되는 위치에 따라 가열 정도를 달리하여 기판(S)을 가열한다. 즉, 기판가열부재(300)는 약액의 공급에 의하여 국소적으로 온도가 감소한 기판(S)을, 기판(S)의 위치에 따라 가열 정도를 달리하여 가열함으로써, 위치에 따른 온도를 균일하게 한다. 본 실시예에서 기판가열부재(300)는 램프장착부(310) 및 가열램프부(330)를 포함한다. The substrate heating member 300 heats the substrate S by varying the degree of heating depending on the position at which the chemical liquid injected from the chemical liquid supply unit 230 is supplied to the substrate S. That is, the substrate heating member 300 heats the substrate S whose temperature is locally reduced by supplying the chemical liquid by varying the degree of heating according to the position of the substrate S, thereby making the temperature according to the position uniform. . In the present embodiment, the substrate heating member 300 includes a lamp mounting part 310 and a heating lamp part 330.
램프장착부(310)는 기판(S)의 상측에 위치하여 가열램프부(330)를 지지한다. 본 실시예에서 램프장착부(310)는 금속 재질을 포함하여 이루어지며, 판 형상으로 형성되어, 처리공정실(미도시) 등에 결합된다.The lamp mounting unit 310 is positioned above the substrate S to support the heating lamp unit 330. In the present embodiment, the lamp mounting portion 310 is made of a metal material, is formed in a plate shape, and is coupled to a processing chamber (not shown).
가열램프부(330)는 램프장착부(310)에 결합되며, 복수개의 가열램프(331)를 포함하여, 기판(S)에 약액이 분사되는 영역에 대응하는 영역의 단위면적당 출력을 조절하여 기판(S)을 가열한다. The heating lamp unit 330 is coupled to the lamp mounting unit 310 and includes a plurality of heating lamps 331 to adjust the output per unit area of the region corresponding to the region in which the chemical liquid is injected onto the substrate S. S) is heated.
본 실시예에서 가열램프부(330)는 약액이 기판(S)에 공급되는 영역에 대응되는 영역, 즉 약액이 기판(S)에 분사될 때 닿는 부위에 대응되는, 구체적으로 닿는 부위의 연직선 상의 상측 또는 하측에 위치하는 가열램프(331)의 출력을 조절하여 단위면적당 출력을 조절한다. In the present embodiment, the heating lamp unit 330 corresponds to a region corresponding to a region where the chemical liquid is supplied to the substrate S, that is, a portion corresponding to a portion that touches when the chemical liquid is injected onto the substrate S, and specifically, on a vertical line of the touching portion. The output per unit area is controlled by adjusting the output of the heating lamp 331 located above or below.
약액이 공급되는 부분에 대응되는 위치의 가열램프부(330)의 출력을 조절하는 방식은 다양하게 구현될 수 있다. 예를 들어 복수 개의 가열램프(331) 중에서 일부 가열램프(331)의 출력을 조절하는 방식, 가열램프(331)의 단위면적당 개수를 조절하는 방식 또는 출력, 크기 등이 상이한 가열램프(331)를 적용하는 방식 등이 가능하다. The method of adjusting the output of the heating lamp unit 330 at a position corresponding to the portion supplied with the chemical liquid may be implemented in various ways. For example, among the plurality of heating lamps 331, a method of adjusting the output of some of the heating lamps 331, a method of adjusting the number of units of the heating lamp 331 per unit area, or a heating lamp 331 having a different output, size, etc. may be used. The method of application is possible.
우선 동일한 크기의 복수 개의 가열램프(331)가 균일하게 배열된 상태에서, 약액이 분사되는 부위에 대응되는 위치에 해당하는 가열램프(331)의 출력을 조절함으로써 약액이 공급되는 부위의 기판(S) 부위를 집중 가열하여 약액의 공급에 따른 기판(S)의 온도 불균일을 저감할 수 있다. First, in a state in which the plurality of heating lamps 331 of the same size are uniformly arranged, the substrate S of the portion where the chemical liquid is supplied by adjusting the output of the heating lamp 331 corresponding to the position corresponding to the portion where the chemical liquid is injected. ) Area can be concentrated to reduce the temperature unevenness of the substrate (S) due to the supply of the chemical liquid.
이러한, 가열램프(331)의 출력 조정은, 약액공급부(230)에서 약액이 분사되는 위치를 사전에 판단하고, 판단된 위치를 기초로 해당되는 위치를 가열하는 가열램프(331)의 출력을 조절하거나, 후술할 온도측정부재(400)에서 측정한 기판(S)의 실시간 온도를 바탕으로 제어부재(500)에서 일부 가열램프(331)의 출력을 조절하는 방식도 가능하다. The output adjustment of the heating lamp 331, in advance determine the position in which the chemical liquid is injected from the chemical liquid supply unit 230, and adjusts the output of the heating lamp 331 for heating the corresponding position based on the determined position Or, it is also possible to adjust the output of the heating lamp 331 of the control member 500 based on the real-time temperature of the substrate (S) measured by the temperature measuring member 400 to be described later.
이와 다르게, 복수 개의 가열램프(331)의 배열을 달리하여 기판(S)의 온도를 보상하는 것도 가능하다. 결국 가열램프(331)의 밀도, 즉 가열램프(331)의 배열을 조절하거나, 출력 또는 형상이 상이한 가열램프(331)를 배열하여 기판(S)의 온도를 보상할 수 있다. Alternatively, the temperature of the substrate S may be compensated by changing the arrangement of the plurality of heating lamps 331. As a result, the temperature of the substrate S may be compensated by adjusting the density of the heating lamp 331, that is, the arrangement of the heating lamp 331, or by arranging heating lamps 331 having different outputs or shapes.
도 3은 본 발명의 제1 실시예에 따른 기판 처리장치에서 약액이 분사되는 상태를 나타내는 도면이고, 도 4는 본 발명의 제1 실시예에 따른 기판 처리장치에서 약액이 분사되는 영역을 나타내는 도면이다. 3 is a view showing a state in which the chemical liquid is injected in the substrate processing apparatus according to the first embodiment of the present invention, Figure 4 is a view showing a region in which the chemical liquid is injected in the substrate processing apparatus according to the first embodiment of the present invention to be.
도 3 및 도 4를 참조하면, 약액공급부(230a)에서 분사된 약액이 기판(S)의 영역 "A" 부위의 분사되는 경우에는, 영역 "A" 부위의 온도가 낮아지게 된다. 낮아지는 온도를 보상하거나, 낮아지는 것을 방지하여, 기판(S)의 온도를 보상하기 위해서는 "A" 영역 부위를 다른 부위에 비하여 더 강하게 가열할 필요가 있다. 3 and 4, when the chemical liquid injected from the chemical liquid supply unit 230a is injected into the region "A" portion of the substrate S, the temperature of the region "A" portion is lowered. In order to compensate for the lowering temperature or to prevent the lowering, and to compensate for the temperature of the substrate S, it is necessary to heat the region "A" more strongly than other regions.
도 5는 본 발명의 제1 실시예에 따른 기판 처리장치에서 가열램프의 출력을 달리하는 상태를 나타내는 도면이고, 도 6은 본 발명의 제1 실시예에 따른 기판 처리장치에서 가열램프의 밀도를 달리하는 상태를 나타내는 도면이며, 도 7은 본 발명의 제1 실시예에 따른 기판 처리장치에서 출력이 상이한 가열램프가 적용된 상태를 나타내는 도면이다. 5 is a view showing a state in which the output of the heating lamp in the substrate processing apparatus according to the first embodiment of the present invention, Figure 6 is a density of the heating lamp in the substrate processing apparatus according to the first embodiment of the present invention FIG. 7 is a view showing a different state, and FIG. 7 is a view showing a state in which a heating lamp having a different output is applied in the substrate processing apparatus according to the first embodiment of the present invention.
도 5 내지 도 7을 참조하면, 가열램프부(330)의 출력을 조절하는 방법이 예시된다. 복수 개의 가열램프(331)중 "A'" 영역에 해당하는 부위에 위치하는 가열램프(331a)에 인가되는 출력을 상승시키면, "A'"가 가열하는 "A" 영역에 전달되는 열전달량이 상승하고, 이에 따라 약액이 공급되는 "A" 영역의 온도가 상승하여 온도가 보상된다.(도 5 참조) 5 to 7, a method of adjusting the output of the heating lamp unit 330 is illustrated. When the output applied to the heating lamp 331a located at the portion corresponding to the area "A '" of the plurality of heating lamps 331 is increased, the amount of heat transfer delivered to the area "A" where "A'" is heated is increased. As a result, the temperature in the area "A" to which the chemical liquid is supplied is increased to compensate for the temperature (see FIG. 5).
"A'" 영역에서 발산되는 열량은 상술한 바와 같이 가열램프(331b)의 단위면적 당 개수를 증가시키거나(도 6 참조), 출력이 크거나, 형상이 상이한 가열램프(331c, 331d)를 적용하여 "A" 영역의 온도를 보상할 수 있다(도 7 참조). As described above, the amount of heat dissipated in the area "A '" increases the number per unit area of the heating lamp 331b (see FIG. 6), or the heating lamps 331c and 331d having different outputs or different shapes. Can be applied to compensate for the temperature in the “A” region (see FIG. 7).
도 8은 본 발명의 제2 실시예에 따른 기판 처리장치에서 약액이 분사되는 상태를 나타내는 도면이고, 도 9는 본 발명의 제2 실시예에 따른 기판 처리장치에서 약액이 분사되는 영역을 나타내는 도면이다. 8 is a view showing a state in which the chemical liquid is injected in the substrate processing apparatus according to the second embodiment of the present invention, Figure 9 is a view showing a region in which the chemical liquid is injected in the substrate processing apparatus according to the second embodiment of the present invention to be.
도 8 및 도 9를 참조하면, 막대형 약액공급부(230b)가 적용된 경우를 나타낸다. 도 8은 막대형 약액공급부(230b)가 기판(S)의 회전중심(C)에서 반경방향으로 연장 형성된 것을 나타내는데, 이러한 경우에 약액은 도 9에서와 같이 "B" 영역에 분사되며, "B" 영역의 온도가 하강할 수 있다. 8 and 9, the rod-shaped chemical supply unit 230b is applied. FIG. 8 shows that the rod-shaped chemical liquid supply unit 230b extends radially from the rotational center C of the substrate S. In this case, the chemical liquid is injected into the area "B" as shown in FIG. "The temperature in the zone may drop.
도 10은 본 발명의 제2 실시예에 따른 기판 처리장치에서 가열램프의 출력을 달리하는 상태를 나타내는 도면이고, 도 11은 본 발명의 제2 실시예에 따른 기판 처리장치에서 가열램프의 밀도를 달리하는 상태를 나타내는 도면이며, 도 12는 본 발명의 제2 실시예에 따른 기판 처리장치에서 출력이 상이한 가열램프가 적용된 상태를 나타내는 도면이다. 10 is a view showing a state in which the output of the heating lamp in the substrate processing apparatus according to a second embodiment of the present invention, Figure 11 is a density of the heating lamp in the substrate processing apparatus according to a second embodiment of the present invention 12 is a view illustrating a different state, and FIG. 12 is a view illustrating a state in which a heating lamp having a different output is applied in the substrate processing apparatus according to the second embodiment of the present invention.
도 10 내지 도 12를 참조하면, "B" 영역에 대응하는 가열램프(331)의 "B'" 영역의 출력을 조절하는 것을 나타낸다. 즉 제2 실시예에서 가열램프(331a)는 "B'" 영역의 출력을 상승시키기 위하여, "B'"영역에 해당하는 가열램프(331a)의 출력을 증대시키거나(도 10 참조), 해당 위치의 가열램프(331b)의 밀도를 늘리거나(도 11 참조), 해당 위치에 크기, 형상, 출력 등이 상이한 가열램프(331e)를 적용하여(도 12 참조) 기판(S)의 "B" 영역의 온도저하를 보상한다.  Referring to FIGS. 10 to 12, the output of the region “B ′” of the heating lamp 331 corresponding to the region “B” is adjusted. That is, in the second embodiment, the heating lamp 331a increases the output of the heating lamp 331a corresponding to the "B '" region to increase the output of the "B'" region (see FIG. 10), or the corresponding. Increase the density of the heating lamp 331b at the position (see FIG. 11) or apply the heating lamp 331e having a different size, shape, output, etc. to the position (see FIG. 12) to " B " Compensate for temperature drop in the area.
도 13은 본 발명의 제3 실시예에 따른 기판 처리장치에서 약액이 분사되는 상태를 나타내는 도면이고, 도 14는 본 발명의 제3 실시예에 따른 기판 처리장치에서 약액이 분사되는 영역을 나타내는 도면이다. 13 is a view showing a state in which the chemical liquid is injected in the substrate processing apparatus according to the third embodiment of the present invention, Figure 14 is a view showing a region in which the chemical liquid is injected in the substrate processing apparatus according to the third embodiment of the present invention to be.
도 13 및 도 14를 참조하면, 소정의 경로를 따라 이동하면서 약액을 분사하는 약액공급부(230c)를 나타낸다. 도 13은 이동형 약액공급부(230c)가 적용된 경우 기판(S)에 약액이 분사되는 영역인 "C"를 나타낸다. Referring to FIGS. 13 and 14, a chemical liquid supply unit 230c for injecting a chemical liquid while moving along a predetermined path is shown. FIG. 13 shows “C” which is a region in which the chemical liquid is injected onto the substrate S when the movable chemical liquid supply unit 230c is applied.
도 15는 본 발명의 제3 실시예에 따른 기판 처리장치에서 가열램프의 출력을 달리하는 상태를 나타내는 도면이고, 도 16은 본 발명의 제3 실시예에 따른 기판 처리장치에서 가열램프의 밀도를 달리하는 상태를 나타내는 도면이며, 도 17은 본 발명의 제3 실시예에 따른 기판 처리장치에서 출력이 상이한 가열램프가 적용된 상태를 나타내는 도면이다. 15 is a view showing a state in which the output of the heating lamp in the substrate processing apparatus according to a third embodiment of the present invention, Figure 16 is a density of the heating lamp in the substrate processing apparatus according to a third embodiment of the present invention FIG. 17 is a view showing a different state, and FIG. 17 is a view showing a state in which a heating lamp having a different output is applied in the substrate processing apparatus according to the third embodiment of the present invention.
도 15 내지 도 17을 참조하면, "C" 영역에 대응하는 가열램프(331)의 "C'" 영역의 출력을 조절하는 것을 나타낸다. 즉 제3 실시예에서 가열램프(331)는 "C'" 영역의 출력을 상승시키기 위하여, "C'"영역에 해당하는 가열램프(331a)의 출력을 증대시키거나(도 15 참조), 해당 위치의 가열램프(331b)의 밀도를 늘리거나(도 16 참조), 해당 위치에 크기, 형상, 출력 등이 상이한 가열램프(331f)를 적용하여(도 17 참조) 기판(S)의 "C" 영역의 온도저하를 보상한다. 15 to 17, the output of the "C '" region of the heating lamp 331 corresponding to the "C" region is adjusted. That is, in the third embodiment, the heating lamp 331 increases the output of the heating lamp 331a corresponding to the "C '" region to increase the output of the "C'" region (see FIG. 15), or Increase the density of the heating lamp 331b at the position (see FIG. 16) or apply the heating lamp 331f having different sizes, shapes, outputs, etc. to the position (see FIG. 17) to " C " Compensate for temperature drop in the area.
본 실시예에서 기판 처리장치(1)는 온도측정부재(400) 및 제어부재(500)를 더 포함한다. 온도측정부재(400)는 기판(S)의 온도를 측정하고, 측정된 온도값을 제어부재(500)에 전달한다. 본 실시예에서 온도측정부재(400)는 파이로미터로 예시되며, 척테이블부(110)에 장착되어 기판(S)의 온도를 측정하는 복수 개의 온도측정부(410)를 포함한다. In the present embodiment, the substrate processing apparatus 1 further includes a temperature measuring member 400 and a control member 500. The temperature measuring member 400 measures the temperature of the substrate S and transmits the measured temperature value to the control member 500. In the present embodiment, the temperature measuring member 400 is illustrated as a pyrometer and includes a plurality of temperature measuring parts 410 mounted on the chuck table 110 to measure the temperature of the substrate S.
제어부재(500)는 온도측정부재(400)에서 측정한 기판(S)의 온도 분포에 따라 가열램프(331)의 출력을 조절한다. 본 실시예에서 제어부재(500)는 미리 지정하거나, 온도측정부재(400)에서 전달받은 기판(S)의 부위별 온도를 기초로, 가열램프(331)에 인가되는 전력을 조절하는 방식으로 가열램프(331)의 출력을 조절한다. The control member 500 adjusts the output of the heating lamp 331 according to the temperature distribution of the substrate S measured by the temperature measuring member 400. In the present embodiment, the control member 500 is previously designated or heated in such a manner as to adjust the power applied to the heating lamp 331 based on the temperature of each part of the substrate S received from the temperature measuring member 400. The output of the lamp 331 is adjusted.
도 18은 본 발명의 일 실시예에 따른 기판 처리방법을 나타내는 도면이다. 18 is a view showing a substrate processing method according to an embodiment of the present invention.
도 1 및 도 18을 참조하면, 본 발명의 일 실시예에 따른 기판 처리방법은 처리준비단계(S100), 처리공정단계(S200), 기판세정단계(S300) 및 기판이송단계(S400)를 포함한다. 1 and 18, a substrate processing method according to an embodiment of the present invention includes a processing preparation step (S100), a processing process step (S200), a substrate cleaning step (S300), and a substrate transfer step (S400). do.
처리준비단계(S100)는 기판(S)의 식각 등을 위한 준비단계에 해당한다. 기판(S)을 처리실의 내측에 위치하는 기판지지부재(100)에 안착한다. 기판(S)을 기판지지부재(100)에 안착하기 위하여 척핀(115)을 대기위치로 이동시키고, 기판(S)을 고정핀(113)의 상측에 안착한 후 척핀(115)을 지지위치로 이동시켜 기판(S)이 공정 중에 이탈되는 것을 방지한다(S110). The process preparation step S100 corresponds to a preparation step for etching the substrate S, or the like. The substrate S is mounted on the substrate support member 100 positioned inside the processing chamber. In order to seat the substrate S on the substrate support member 100, the chuck pin 115 is moved to the standby position, and the substrate S is seated on the upper side of the fixing pin 113, and then the chuck pin 115 is moved to the support position. In order to prevent the substrate S from being separated during the process (S110).
기판(S)이 척테이블부(110)에 고정되면, 제어부재(500)는 구동부(150)를 구동시켜 회전축부(130)와 함께 척테이블부(110)를 회전시킨다(S130).When the substrate S is fixed to the chuck table 110, the control member 500 drives the driving unit 150 to rotate the chuck table 110 together with the rotation shaft 130 (S130).
척테이블부(110)가 회전되면, 제어부재(500)는 유량조절밸브(253)를 제어하여 약액공급부(230)를 통하여 약액을 기판(S)에 분사한다. 약액은 기판(S)이 회전되는 상황에서 기판(S)에 분사되는 방식으로 기판(S)에 도포된다(S150). When the chuck table unit 110 is rotated, the control member 500 controls the flow control valve 253 to inject the chemical liquid to the substrate (S) through the chemical liquid supply unit 230. The chemical liquid is applied to the substrate S in such a manner that the chemical liquid is sprayed onto the substrate S while the substrate S is rotated (S150).
처리공정단계(S200)는 기판(S)에 식각 등의 처리를 진행하는 단계에 해당한다. 약액이 도포되면 제어부재(500)는 기판가열부재(300)를 이용하여 기판(S)을 가열한다. 부식재 등을 포함하는 약액이 도포된 상태에서 기판(S)이 가열되면 식각 등의 처리공정이 진행된다(S210). The processing step S200 corresponds to a step of performing an etching process on the substrate S. FIG. When the chemical liquid is applied, the control member 500 heats the substrate S by using the substrate heating member 300. When the substrate S is heated in a state in which a chemical solution including a corrosive material is applied, an etching process is performed (S210).
도 19는 본 발명의 일 실시예에 따른 기판 처리장치 및 기판 처리방법에서 약액의 공급 및 가열을 나타내는 도면이다. 19 is a view showing supply and heating of a chemical liquid in a substrate processing apparatus and a substrate processing method according to an embodiment of the present invention.
도 19를 참조하면, 약액은 식각 공정인 처리공정단계에서 간헐적으로 기판(S)에 공급된다. 처리 공정 중에 약액과 피처리물의 반응이 일어나거나, 약액이 기판(S)의 외측으로 흐르게 되면서 약액의 양이 필요치 이하로 줄어들게 되면 기판(S)의 처리공정이 불균일해 질 수 있다. Referring to FIG. 19, the chemical liquid is intermittently supplied to the substrate S in a processing step which is an etching process. If the chemical liquid reacts with the processing object during the treatment process, or if the chemical liquid flows out of the substrate S and the amount of the chemical liquid is lower than the required value, the treatment process of the substrate S may become uneven.
제어부재(500)는 처리공정단계에서 약액공급부재(200)를 제어하여 설정된 시간에 주기적으로 약액을 기판(S)에 공급하거나, 약액의 성분 또는 약액이 잔량 등을 측정하는 약액측정부재(270) 등에서 측정한 측정값을 기초로, 기판(S)에 잔류하는 약액의 성분 또는 약액의 잔량을 분석하여, 설정값 이하에 해당하는 경우 약액을 기판(S)에 분사한다. 이러한 기판(S)의 가열 및 약액의 간헐적 공급은 설정된 공정 시간 동안 진행된다. The control member 500 controls the chemical liquid supply member 200 in the processing step to periodically supply the chemical liquid to the substrate S at a predetermined time, or the chemical liquid measurement member 270 for measuring the remaining amount of the chemical component or the chemical liquid. Based on the measured values measured in the above), the components of the chemical liquid remaining on the substrate S or the remaining amount of the chemical liquid are analyzed, and when the chemical liquid is below the set value, the chemical liquid is sprayed onto the substrate S. The heating of the substrate S and the intermittent supply of the chemical liquid proceed for a set process time.
약액이 기판(S)에 공급되면, 약액이 기판(S)에 공급되는 영역의 온도가 다른 부위에 비하여 낮아질 수 있다. When the chemical liquid is supplied to the substrate S, the temperature of the region where the chemical liquid is supplied to the substrate S may be lower than that of other portions.
약액공급부(230)를 통하여 분사되는 약액이 기판(S)에 공급되는 부위가 일정한 경우에는 해당 부위에 대응되는 위치의 가열램프(331)의 출력을 상승시켜 온도가 낮아진 것을 보상한다. When a portion of the chemical liquid injected through the chemical liquid supply unit 230 is supplied to the substrate S is constant, the output of the heating lamp 331 at a position corresponding to the corresponding portion is increased to compensate for the decrease in temperature.
약액이 공급된 부위의 온도를 보상하기 위하여 대응되는 위치의 가열램프(331)의 출력을 달리하는 내용은 상술한 바와 같다. As described above, the output of the heating lamp 331 at the corresponding position is changed to compensate for the temperature of the portion to which the chemical liquid is supplied.
설정된 공정 시간에 도달하면(S230), 제어부재(500)는 세정제 등을 기판(S)에 공급하여 기판(S)을 세정하고(S300), 세정이 완료되면 기판반송장치(미도시) 등을 이용하여 기판(S)을 처리실 밖으로 이송한다(S400). When the set process time is reached (S230), the control member 500 supplies a cleaning agent or the like to the substrate S to clean the substrate S (S300), and when the cleaning is completed, the substrate conveying apparatus (not shown) The substrate S is transferred to the outside of the processing chamber by using the step S400.
본 실시예에서 기판 처리장치(1)는, 약액이 공급되는 부위에 대응되는 위치의 가열램프(331)의 출력을 조절하여 온도를 보상함으로써, 기판(S)의 온도를 균일하게 유지할 수 있는 효과가 있다.In the present embodiment, the substrate processing apparatus 1 compensates the temperature by adjusting the output of the heating lamp 331 at a position corresponding to the site where the chemical liquid is supplied, thereby maintaining the temperature of the substrate S uniformly. There is.
이로써, 본 실시예에서 기판 처리장치(1)는 온도측정부재(400) 및 제어부재(500)를 이용하여 가열램프부(330)의 출력을 조절함으로써, 기판(S)의 온도 불균일을 실시간으로 조정할 수 있다. Thus, in the present embodiment, the substrate processing apparatus 1 adjusts the output of the heating lamp unit 330 by using the temperature measuring member 400 and the control member 500, thereby realizing the temperature unevenness of the substrate S in real time. I can adjust it.
또한, 본 실시예에서 기판 처리장치(1) 및 기판 처리방법은 약액을 기판(S)에 간헐적으로 공급함으로써, 기판(S) 처리공정의 균일성을 확보하고, 약액의 부족 등에 의한 기판(S)의 품질 저하를 방지함으로써, 안정적인 기판(S) 처리공정을 가능하게 한다. In addition, in the present embodiment, the substrate processing apparatus 1 and the substrate processing method supply the chemical liquid to the substrate S intermittently, thereby ensuring uniformity of the processing of the substrate S, and the substrate S due to the lack of the chemical liquid. By preventing the deterioration of the quality), it is possible to enable a stable substrate (S) processing step.
본 발명은 도면에 도시된 실시예를 참고로 하여 설명되었으나, 이는 예시적인 것에 불과하며, 당해 기술이 속하는 분야에서 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 것이다. 따라서, 본 발명의 진정한 기술적 보호범위는 아래의 특허청구범위에 의해서 정하여져야 할 것이다.Although the present invention has been described with reference to the embodiments shown in the drawings, this is merely exemplary, and those skilled in the art to which the art belongs can make various modifications and other equivalent embodiments therefrom. I will understand. Therefore, the true technical protection scope of the present invention will be defined by the claims below.

Claims (15)

  1. 기판을 지지하는 기판지지부재;A substrate support member for supporting a substrate;
    상기 기판에 약액을 간헐적으로 공급하는 약액공급부재; 및 A chemical liquid supply member supplying chemical liquids intermittently to the substrate; And
    상기 기판을 가열하는 기판가열부재;A substrate heating member for heating the substrate;
    를 포함하는 것을 특징으로 하는 기판 처리장치. Substrate processing apparatus comprising a.
  2. 제 1항에 있어서, 상기 약액공급부재는, The method of claim 1, wherein the chemical liquid supply member,
    약액이 저장되는 약액저장부;Chemical liquid storage unit for storing the chemical liquid;
    약액을 상기 기판에 분사하는 약액공급부; 및A chemical solution supplying part for injecting a chemical solution onto the substrate; And
    상기 약액저장부와 상기 약액공급부를 연결하며, 약액의 이동을 안내하고, 기판처리공정 시 상기 약액저장부의 약액이 상기 약액공급부에 간헐적으로 공급되도록 하는 공급조절부;A supply control unit connecting the chemical liquid storage unit and the chemical liquid supply unit to guide the movement of the chemical liquid and intermittently supplying the chemical liquid of the chemical liquid storage unit to the chemical liquid supply unit during a substrate processing process;
    를 포함하는 것을 특징으로 하는 기판 처리장치. Substrate processing apparatus comprising a.
  3. 제 2항에 있어서, 상기 공급조절부는, The method of claim 2, wherein the supply control unit,
    상기 약액저장부와 상기 약액공급부를 연결하여, 약액의 이동을 안내하는 약액안내관; 및A chemical liquid guide tube connecting the chemical liquid storage part and the chemical liquid supply part to guide the movement of the chemical liquid; And
    상기 약액안내관에 연결되며, 상기 약액공급부재에 전달되는 약액의 유량을 조절하는 유량조절밸브; A flow rate control valve connected to the chemical liquid guide tube and controlling a flow rate of the chemical liquid delivered to the chemical liquid supply member;
    를 포함하는 것을 특징으로 하는 기판 처리장치. Substrate processing apparatus comprising a.
  4. 제 3항에 있어서, 상기 유량조절밸브는, According to claim 3, wherein the flow control valve,
    기 설정된 시간 동안 주기적으로 약액이 공급되도록, 상기 약액안내관을 통하여 이동하는 약액의 유량을 제어하는 것을 특징으로 하는 기판 처리장치. And controlling the flow rate of the chemical liquid moving through the chemical liquid guide tube so that the chemical liquid is periodically supplied for a predetermined time.
  5. 제 4항에 있어서, The method of claim 4, wherein
    상기 기판지지부재의 일측에 위치하여 상기 기판의 외측으로 이탈되는 약액의 유량 또는 성분비를 측정하고, 측정값을 제어부재에 전달하는 약액측정부재;를 더 포함하고, A chemical liquid measuring member positioned on one side of the substrate supporting member to measure a flow rate or a component ratio of the chemical liquid separated from the outside of the substrate and transferring the measured value to a control member;
    상기 제어부재는 상기 약액측정부재에서 측정한 약액의 유량 또는 성분비가 설정값 이하에 해당하는 경우 상기 유량조절밸브를 제어하여 상기 기판에 약액을 공급하는 것을 특징으로 하는 기판 처리장치. And the control member supplies the chemical liquid to the substrate by controlling the flow regulating valve when the flow rate or the component ratio of the chemical liquid measured by the chemical liquid measuring member is equal to or less than a set value.
  6. 제 1항에 있어서, 상기 기판가열부재는, The method of claim 1, wherein the substrate heating member,
    상기 약액공급부재에서 공급된 약액이 상기 기판에 공급되는 위치에 따라 가열 정도를 달리하여 상기 기판을 가열하는 것을 특징으로 하는 기판 처리장치. The substrate processing apparatus, characterized in that for heating the substrate by varying the degree of heating in accordance with the position where the chemical liquid supplied from the chemical liquid supply member is supplied to the substrate.
  7. 제 6항에 있어서, 상기 기판가열부재는, The method of claim 6, wherein the substrate heating member,
    상기 기판의 일측에 위치하는 램프장착부; 및Lamp mounting portion located on one side of the substrate; And
    상기 램프장착부에 위치하고, 복수 개의 가열램프를 포함하며, 상기 기판에 약액이 분사되는 영역에 대응하는 영역의 단위면적당 출력을 조절하여 상기 기판을 가열하는 가열램프부;A heating lamp unit positioned in the lamp mounting unit and including a plurality of heating lamps to heat the substrate by adjusting an output per unit area of a region corresponding to a region where the chemical liquid is injected onto the substrate;
    를 포함하는 것을 특징으로 하는 기판 처리장치. Substrate processing apparatus comprising a.
  8. 제 7항에 있어서, 상기 가열램프부는, The method of claim 7, wherein the heating lamp unit,
    제어부재가 약액이 상기 기판에 공급되는 영역에 대응되는 영역을 가열하는 상기 가열램프의 출력을 조절하여, 상기 가열램프의 위치 별 출력을 조절하는 것을 특징으로 하는 기판 처리장치. And a control member controls the output of the heating lamp for heating the region corresponding to the region where the chemical liquid is supplied to the substrate, thereby controlling the output for each position of the heating lamp.
  9. 제 7항에 있어서, 상기 가열램프부는, The method of claim 7, wherein the heating lamp unit,
    제어부재가 약액이 상기 기판에 공급되는 영역에 대응되는 영역을 가열하는 상기 가열램프의 단위면적당 개수를 조절하여, 상기 가열램프의 위치 별 출력을 조절하는 것을 특징으로 하는 기판 처리장치. And a control member adjusts the number of outputs of the heating lamps by adjusting the number per unit area of the heating lamps for heating a region corresponding to the area where the chemical liquid is supplied to the substrate.
  10. 제 8항에 있어서, The method of claim 8,
    상기 기판의 온도를 측정하는 온도측정부재;를 더 포함하고, Further comprising: a temperature measuring member for measuring the temperature of the substrate,
    상기 제어부재가 상기 온도측정부재에서 측정한 상기 기판의 온도 분포에 따라 상기 가열램프의 출력을 조절하는 것을 특징으로 하는 기판 처리장치. And the control member adjusts the output of the heating lamp according to the temperature distribution of the substrate measured by the temperature measuring member.
  11. 기판을 기판지지부재에 안착하고, 상기 기판에 약액을 도포하는 처리준비단계; 및A process preparation step of seating a substrate on a substrate support member and applying a chemical to the substrate; And
    제어부재가 기판가열부재 및 약액공급부재를 제어하여, 상기 기판을 가열하면서 약액을 간헐적으로 공급하는 처리공정단계;A processing step of controlling the substrate heating member and the chemical liquid supply member to supply the chemical liquid intermittently while heating the substrate;
    를 포함하는 것을 특징으로 하는 기판 처리방법.Substrate processing method comprising a.
  12. 제 11항에 있어서, 상기 처리준비단계는, The method of claim 11, wherein the preparation step of processing,
    상기 기판을 상기 기판지지부재에 안착하는 기판안착단계;A substrate mounting step of mounting the substrate on the substrate support member;
    상기 기판지지부재에 안착된 상기 기판을 회전시키는 기판회전단계; 및A substrate rotating step of rotating the substrate seated on the substrate supporting member; And
    상기 기판에 약액을 공급하여 상기 기판에 약액을 도포하는 기판도포단계;A substrate coating step of applying a chemical liquid to the substrate to supply the chemical liquid to the substrate;
    를 포함하는 것을 특징으로 하는 기판 처리방법.Substrate processing method comprising a.
  13. 제 11항에 있어서, 상기 처리공정단계는, The method of claim 11, wherein the treating step,
    상기 기판의 일측에 위치한 약액측정부재가 상기 기판에서 이탈되는 약액의 양 또는 성분비를 측정하는 단계; 및 Measuring an amount or a component ratio of the chemical liquid separated from the substrate by the chemical liquid measurement member located at one side of the substrate; And
    상기 제어부재가 상기 약액측정부재에서 측정한 약액의 양 또는 성분비를 분석하고, 설정된 값 이하에 해당하는 경우, 상기 약액공급부재를 제어하여 약액을 상기 기판에 공급하는 단계;Analyzing, by the control member, the amount or component ratio of the chemical liquid measured by the chemical liquid measuring member and controlling the chemical liquid supply member to supply the chemical liquid to the substrate when it falls below a set value;
    를 포함하는 것을 특징으로 하는 기판 처리방법. Substrate processing method comprising a.
  14. 제 11항에 있어서, 상기 처리공정단계는, The method of claim 11, wherein the treating step,
    상기 기판을 가열하면서, 약액을 상기 기판에 주기적으로 공급하는 단계; 및 Periodically supplying a chemical liquid to the substrate while heating the substrate; And
    상기 제어부재가 기 설정된 처리공정시간의 도과 여부를 판단하고, 처리공정시간 도과 시 상기 기판의 가열 및 약액의 공급을 중단하는 단계;Determining, by the controller member, whether the predetermined processing time has elapsed, and stopping the heating of the substrate and the supply of the chemical liquid when the processing time has elapsed;
    를 포함하는 것을 특징으로 하는 기판 처리방법. Substrate processing method comprising a.
  15. 제 11항에 있어서, 상기 처리공정단계는, The method of claim 11, wherein the treating step,
    상기 제어부재가 상기 기판가열부재를 제어하여, 상기 약액공급부재에서 공급된 약액이 상기 기판에 공급되는 위치에 따라 가열 정도를 달리하여 상기 기판을 가열하는 단계;를 포함하는 것을 특징으로 하는 기판 처리방법.And controlling the substrate heating member to control the substrate heating member to heat the substrate by varying the degree of heating depending on the position at which the chemical liquid supplied from the chemical liquid supply member is supplied to the substrate. Way.
PCT/KR2015/008951 2014-08-27 2015-08-26 Substrate treatment apparatus and substrate treatment method WO2016032242A1 (en)

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KR1020140112152A KR102069078B1 (en) 2014-08-27 2014-08-27 Substrate precessing apparatus
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