TWI598980B - Substrate processing apparatus and method - Google Patents
Substrate processing apparatus and method Download PDFInfo
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- TWI598980B TWI598980B TW104127840A TW104127840A TWI598980B TW I598980 B TWI598980 B TW I598980B TW 104127840 A TW104127840 A TW 104127840A TW 104127840 A TW104127840 A TW 104127840A TW I598980 B TWI598980 B TW I598980B
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- liquid chemical
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- 239000000758 substrate Substances 0.000 title claims description 341
- 238000000034 method Methods 0.000 title claims description 58
- 239000007788 liquid Substances 0.000 claims description 254
- 239000000126 substance Substances 0.000 claims description 249
- 238000010438 heat treatment Methods 0.000 claims description 152
- 230000008569 process Effects 0.000 claims description 40
- 238000003860 storage Methods 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 15
- 238000003672 processing method Methods 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 11
- 230000001276 controlling effect Effects 0.000 claims description 9
- 239000007921 spray Substances 0.000 claims description 8
- 230000001105 regulatory effect Effects 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 238000001179 sorption measurement Methods 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000011112 process operation Methods 0.000 description 4
- 239000003518 caustics Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000010923 batch production Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
本申請案主張2014年8月27日申請之韓國專利申請案第2014-0112152號及2014年8月27日申請之韓國專利申請案第2014-0112153號的權利，其內容藉參考方式完全併入於本案中。 The present application claims the rights of the Korean Patent Application No. 2014-0112152, filed on Aug. 27, 2014, and the Korean Patent Application No. 2014-0112153, filed on Aug. In this case.
本發明係關於一種基板處理裝置及方法，且特別地關於可於單一晶圓濕式製程中均勻地維持一基板之溫度以及可藉由調整液態化學品的供應而確保一基板處理製程中的均勻度及基板品質之一種基板處理裝置及方法。 The present invention relates to a substrate processing apparatus and method, and in particular to uniformly maintaining the temperature of a substrate in a single wafer wet process and ensuring uniformity in a substrate processing process by adjusting the supply of liquid chemicals A substrate processing apparatus and method for degree and substrate quality.
於一基板處理裝置中，加熱基板的方法依據製程而有所變化。於一乾式製程中可採用使用一紅外燈之一直接加熱結構或防止熱損失之一密封結構，而於一濕式製程中可採用混合兩或更多種類液體及採用化學反應熱之一方法或直接加熱並供應液體之一方法。 In a substrate processing apparatus, the method of heating the substrate varies depending on the process. In a dry process, one of the infrared lamps can be used to directly heat the structure or prevent heat loss. In a wet process, two or more kinds of liquids can be mixed and one of the chemical reaction heats can be used or One method of directly heating and supplying a liquid.
此外，乾式製程的批次製程主要使用對流熱與輻射熱而供應熱能，而單一晶圓製程則採用輻射熱而供應熱能。自濕式製程同時處理數片基板之批次製程的情形下，可採用直 接加熱及供應液體之方法，而於處理單片基板的單一晶圓製程的情形下，可主要採用使用化學反應熱之方法。 In addition, dry process batch processes primarily use convection heat and radiant heat to supply thermal energy, while single wafer processes use radiant heat to supply thermal energy. In the case of a batch process in which a plurality of substrates are simultaneously processed by a wet process, straight In the case of a single wafer process for processing a single substrate, a method of using chemical reaction heat can be mainly employed.
於通常之乾式單一晶圓製程中，可採用紅外線燈具於短時間內供應大量的熱能，並進而完成了製程。此製程可通稱為一RTP(快速熱製程)。於RTP製程中，當採用均勻的熱能而加熱基板時，基板的中央部的溫度很可能會較其一週邊區的溫度為高。 In a typical dry single wafer process, an infrared illuminator can be used to supply a large amount of heat in a short period of time, and the process is completed. This process can be generically referred to as an RTP (Rapid Thermal Process). In the RTP process, when the substrate is heated by uniform thermal energy, the temperature in the central portion of the substrate is likely to be higher than the temperature in one of the peripheral regions.
另一方面，於濕式單一晶圓製程中，供應液體化學品至基板處，從而降低了供應有此液體化學品的區域之溫度，且因此基板的溫度依照基板的位置而變得不均勻。此外，基於由蒸發造成的液體化學品的成分改變、或一特定成分的分離、或調整殘留於基板上的液態化學品的困難，並無法確保基板的處理製程的均勻度，便導致了基板品質的劣化情形。 On the other hand, in the wet single wafer process, liquid chemicals are supplied to the substrate, thereby lowering the temperature of the region where the liquid chemicals are supplied, and thus the temperature of the substrate becomes uneven according to the position of the substrate. In addition, the quality of the substrate is caused by the change in composition of the liquid chemical caused by evaporation, or the separation of a specific component, or the difficulty of adjusting the liquid chemical remaining on the substrate, and the uniformity of the processing of the substrate cannot be ensured. Deterioration situation.
本發明之背景技術已揭露於韓國專利申請公開案第2007-0094674號(於2007年9月21日公開，標題為單一晶圓型基板處理裝置)內以及於韓國專利申請公開案第2014-0053823號(於2014年5月8日公開，標題為液體處理裝置及液體處理方法)內。 The background of the present invention has been disclosed in Korean Patent Application Publication No. 2007-0094674 (published on Sep. 21, 2007, entitled: Single-Panel Type Substrate Processing Apparatus) and in Korean Patent Application Publication No. 2014-0053823 No. (published on May 8, 2014, titled Liquid Handling Device and Liquid Handling Method).
本發明係關於一種基板處理裝置與方法，其可藉由補償供應有一液體化學品之基板的一區域的溫度而均勻地維持整個基板的溫度，藉由調整液體化學品的供應而消除由缺乏一腐蝕性藥劑等所造成的基板處理製成的非均勻性，並適當地供應基板處理製程所需之液體化學品。 The present invention relates to a substrate processing apparatus and method which can uniformly maintain the temperature of an entire substrate by compensating the temperature of a region of a substrate supplied with a liquid chemical, and eliminate the lack of one by adjusting the supply of the liquid chemical The non-uniformity of the substrate treatment caused by the corrosive agent or the like, and the liquid chemicals required for the substrate processing process are appropriately supplied.
依據本發明之一方面，提供了一種基板處理裝置，包括：一基板支撐件，支撐一基板；一液體化學品供應件，間歇地供應一液體化學品至該基板；以及一基板加熱件，加熱該基板。 According to an aspect of the invention, there is provided a substrate processing apparatus comprising: a substrate support member supporting a substrate; a liquid chemical supply member intermittently supplying a liquid chemical to the substrate; and a substrate heating member heating The substrate.
在此，該液體化學品供應件可包括：一液體化學品儲存單元，儲存該液體化學品；一液體化學品供應單元，噴灑該液體化學品至該基板；以及一供應調整單元，連結該液體化學品儲存單元與該液體化學品供應單元，導引該液體化學品的流動及於一基板處理製程時讓使液體化學品儲存單元之該液體化學品間歇地供應至該液體化學品供應單元。 Here, the liquid chemical supply member may include: a liquid chemical storage unit that stores the liquid chemical; a liquid chemical supply unit that sprays the liquid chemical to the substrate; and a supply adjustment unit that connects the liquid The chemical storage unit and the liquid chemical supply unit direct the flow of the liquid chemical and intermittently supply the liquid chemical of the liquid chemical storage unit to the liquid chemical supply unit during a substrate processing process.
此外，該供應調整單元可包括：一液體化學品導管，連結該液體化學品儲存單元與該液體化學品供應單元，並導引該液體化學品的流動；以及一流速調節閥，連結該液體化學品導管，並調整傳輸至該液體化學品供應件之該液體化學品之一流速。 In addition, the supply adjustment unit may include: a liquid chemical conduit connecting the liquid chemical storage unit and the liquid chemical supply unit, and guiding the flow of the liquid chemical; and a flow rate adjusting valve connecting the liquid chemical The conduit is adjusted and the flow rate of one of the liquid chemicals delivered to the liquid chemical supply is adjusted.
此外，該流速調節閥可控制了移動通過該液體化學品導管之該液體化學品的該流速，從而週期性地供應該液態化學品一預定時間。 Additionally, the flow rate regulating valve controls the flow rate of the liquid chemical moving through the liquid chemical conduit to periodically supply the liquid chemical for a predetermined period of time.
此外，該基板處理裝置可更包括一液體化學品量測件，設置於該基板支撐件之一側上，量測分離至該基板之外部之該液體化學品之一流速或一成分比，以及傳輸量測得到之該流速或該成分比至一控制件，其中當為該液體化學品量測單元所量測之該液體化學品之該流速或該成分比為一設定值或更少時，該控制件藉由控制該流速調節閥而供應該液體化學品 至該基板。 In addition, the substrate processing apparatus may further include a liquid chemical measuring component disposed on one side of the substrate support to measure a flow rate or a composition ratio of the liquid chemical separated to the outside of the substrate, and Transmitting the measured flow rate or the composition ratio to a control member, wherein when the flow rate or the composition ratio of the liquid chemical measured by the liquid chemical measuring unit is a set value or less, The control unit supplies the liquid chemical by controlling the flow rate regulating valve To the substrate.
此外，該基板加熱件可依照該液體化學品供應件所供應之該液體化學品供應至該基板的一位置以改變一加熱程度而加熱該基板。 Further, the substrate heating member may heat the substrate according to a position at which the liquid chemical supplied from the liquid chemical supply member is supplied to the substrate to change a degree of heating.
此外，該基板加熱件可更包括：一燈具安裝單元，設置於該基板之一側上；以及一加熱燈具單元，設置於該燈具安裝單元內，包括複數個加熱燈具，並藉由調整對應於噴灑有該液態化學品之該基板之一區域之該基板加熱件之一區域之每單位區域之一輸出而加熱該基板。 In addition, the substrate heating component may further include: a lamp mounting unit disposed on one side of the substrate; and a heating lamp unit disposed in the lamp mounting unit, including a plurality of heating lamps, and corresponding to One of each unit area of the region of the substrate heating member in a region of the substrate in which the liquid chemical is sprayed is heated to heat the substrate.
此外，該加熱燈具可依照一控制件調整用於加熱對應於噴灑有該液態化學品之該基板之一區域之該基板加熱件之一區域的該加熱燈具的一輸出之一方式調整該加熱燈具之各位置之一輸出。 In addition, the heating lamp can adjust the heating lamp according to a control member for adjusting one of the outputs of the heating lamp for heating an area of the substrate heating member corresponding to a region of the substrate on which the liquid chemical is sprayed. One of each position is output.
此外，該加熱燈具單元依照一控制件調整用於加熱對應於供應有該液態化學品之該基板之一區域之該基板加熱件之一區域的該些加熱燈具的每單位區域的數量之一方式調整該加熱燈具之各位置之一輸出。 Further, the heating lamp unit adjusts one of the number of each unit area of the heating lamps for heating an area of the substrate heating member corresponding to a region of the substrate to which the liquid chemical is supplied, according to a control member. Adjust the output of one of the positions of the heating fixture.
此外，該基板處理裝置可更包括：一溫度量測件，量測該基板之一溫度，其中該控制件依據為該溫度量測件所量測到之該基板的溫度分佈而調整該加熱燈具的輸出。 In addition, the substrate processing apparatus may further include: a temperature measuring component that measures a temperature of the substrate, wherein the control component adjusts the heating fixture according to the temperature distribution of the substrate measured by the temperature measuring component Output.
依據本發明之一方面，提供了一種基板處理方法，包括：放置一基板至一基板支撐件上及施加一液體化學品至該基板；以及藉由一控制件控制一基板加熱件與一液體化學品供應件於加熱該基板時間歇地供應該液體化學品至該基板。 According to an aspect of the invention, a substrate processing method includes: placing a substrate onto a substrate support and applying a liquid chemical to the substrate; and controlling a substrate heating member and a liquid chemistry by a control member The supply member intermittently supplies the liquid chemical to the substrate while heating the substrate.
在此，該放置與該供應可包括：放置該基板至該基板支撐件上；旋轉放置於該基板支撐件上之該基板；以及藉由供應該液體化學品至該基板而供給該液體化學品至該基板。 Here, the placing and the supplying may include: placing the substrate onto the substrate support; rotating the substrate placed on the substrate support; and supplying the liquid chemical by supplying the liquid chemical to the substrate To the substrate.
此外，該間歇性供應可包括：藉由設置於該基板上之一側上之一液體化學品量測單元量測自該基板分離之該液體化學品的一數量或一成分比；以及當該控制件分析該液體化學品量測件所量測到之該液體化學品的該數量或該成分比，而分析的數量或成份比為一設定值或更少時，藉由控制該液體化學品供應件而供應該液體化學品至該基板。 Additionally, the intermittent supply may include measuring a quantity or a composition ratio of the liquid chemical separated from the substrate by a liquid chemical measuring unit disposed on one side of the substrate; and when The control member analyzes the quantity or the ratio of the liquid chemical measured by the liquid chemical measuring component, and when the analyzed quantity or composition ratio is a set value or less, by controlling the liquid chemical The liquid chemical is supplied to the substrate by a supply member.
此外，該間歇地供應可包括：於加熱該基板時週期地供應該液體化學品至該基板；以及藉由該控制件判定是否達到預先設定之一製程時間，以及當抵達該製程時間時停止該基板的加熱以及該液體化學品的供應。 Additionally, the intermittently supplying may include: periodically supplying the liquid chemical to the substrate when the substrate is heated; and determining, by the control, whether a predetermined one of the process times is reached, and stopping when the process time is reached Heating of the substrate and supply of the liquid chemical.
此外，該間歇地供應可包括：依照自該液體化學品供應件所供應之該液體化學品供應至該基板之一位置而藉由該控制件而控制該基板加熱件以改變加熱程度之一方式加熱該基板。 Further, the intermittent supply may include: controlling the substrate heating member to change the degree of heating by the control member according to the supply of the liquid chemical supplied from the liquid chemical supply member to a position of the substrate The substrate is heated.
100‧‧‧基板支撐件 100‧‧‧Substrate support
110‧‧‧吸附台單元 110‧‧‧Adsorption station unit
111‧‧‧吸附台 111‧‧‧Adsorption station
113‧‧‧固定銷 113‧‧‧fixed pin
115‧‧‧吸附銷 115‧‧‧Sucking pin
130‧‧‧轉軸單元 130‧‧‧ shaft unit
150‧‧‧驅動單元 150‧‧‧ drive unit
200‧‧‧液體化學品供應件 200‧‧‧Liquid chemical supply parts
210‧‧‧液體化學品儲存單元 210‧‧‧Liquid Chemical Storage Unit
230‧‧‧液體化學品供應單元 230‧‧‧Liquid Chemical Supply Unit
230a‧‧‧液體化學品供應單元 230a‧‧‧Liquid Chemical Supply Unit
230b‧‧‧液體化學品供應單元 230b‧‧‧Liquid Chemical Supply Unit
230c‧‧‧液體化學品供應單元 230c‧‧‧Liquid Chemical Supply Unit
250‧‧‧供應調整單元 250‧‧‧Supply adjustment unit
251‧‧‧液體化學品導管 251‧‧‧Liquid chemical conduit
253‧‧‧流速調節閥 253‧‧‧Flow rate regulating valve
270‧‧‧液體化學品量測件 270‧‧‧Liquid chemical measuring parts
300‧‧‧基板加熱件 300‧‧‧Substrate heating parts
310‧‧‧燈具安裝單元 310‧‧‧Lighting installation unit
330‧‧‧加熱燈具單元 330‧‧‧Heating lamp unit
331‧‧‧加熱燈具 331‧‧‧heating lamps
331a‧‧‧加熱燈具 331a‧‧‧heating lamps
331b‧‧‧加熱燈具 331b‧‧‧heating lamps
331c‧‧‧加熱燈具 331c‧‧‧heating lamps
331d‧‧‧加熱燈具 331d‧‧‧heating lamps
331e‧‧‧加熱燈具 331e‧‧‧heating lamps
331f‧‧‧加熱燈具 331f‧‧‧heating lamps
400‧‧‧溫度量測件 400‧‧‧temperature measuring parts
410‧‧‧溫度量測單元 410‧‧‧temperature measuring unit
500‧‧‧控制件 500‧‧‧Controls
S‧‧‧基板 S‧‧‧Substrate
A‧‧‧區域 A‧‧‧ area
A’‧‧‧區域 A’‧‧‧Area
B‧‧‧區域 B‧‧‧Area
B’‧‧‧區域 B’‧‧‧Area
C‧‧‧區域 C‧‧‧ area
C’‧‧‧區域 C’‧‧‧Area
S100‧‧‧製程準備操作 S100‧‧‧Process preparation operation
S110‧‧‧操作 S110‧‧‧ operation
S130‧‧‧操作 S130‧‧‧ operation
S150‧‧‧操作 S150‧‧‧ operation
S200‧‧‧製程操作 S200‧‧‧Process operation
S210‧‧‧操作 S210‧‧‧ operation
S230‧‧‧操作 S230‧‧‧ operation
S300‧‧‧基板潔淨操作 S300‧‧‧ substrate cleaning operation
S400‧‧‧基板傳輸操作 S400‧‧‧Substrate transfer operation
為讓本發明之上述和其他目的、特徵和優點能為本領域之技術人員更明顯易懂，下文特舉示例實施例，並配合所附圖式，作詳細說明如下。 The above and other objects, features and advantages of the present invention will become more apparent to those skilled in the <
第1圖為依據本發明之一實施例之一種基板處理裝置之一前視圖； 第2圖繪示了依據本發明之一實施例之於一基板處理裝置內供應一液體化學品之一種狀態；第3圖繪示了依據本發明之第一實施例之於一基板處理裝置內噴灑一液體化學品之一種狀態；第4圖繪示了依據本發明之第一實施例之於一基板處理裝置內噴灑一液體化學品之一區域；第5圖繪示了依據本發明之第一實施例之於一基板處理裝置內之一加熱燈具的輸出變化之一種狀態；第6圖繪示了依據本發明之第一實施例之於一基板處理裝置內之一加熱燈具的密度變化之一種狀態；第7圖繪示了依據本發明之第一實施例之應用至一基板處理裝置之不同輸出的數個加熱燈具之一種狀態；第8圖繪示了依據本發明之第二實施例之於一基板處理裝置內噴灑一液體化學品之一種狀態；第9圖繪示了依據本發明之第二實施例之於一基板處理裝置內噴灑一液體化學品之一區域；第10圖繪示了依據本發明之第二實施例之於一基板處理裝置內一加熱燈具的輸出變化之一種狀態；第11圖繪示了依據本發明之第二實施例之於一基板處理裝置內一加熱燈具的密度變化之一種狀態；第12圖繪示了依據本發明之第二實施例之應用至一基板處理裝置之不同輸出的數個加熱燈具之一種狀態；第13圖繪示了依據本發明之第三實施例之於一基板處理裝置內噴灑一液體化學品之一種狀態； 第14圖繪示了依據本發明之第三實施例之於一基板處理裝置內噴灑一液體化學品之一區域；第15圖繪示了依據本發明之第三實施例之於一基板處理裝置內一加熱燈具的輸出變化之一種狀態；第16圖繪示了依據本發明之第三實施例之於一基板處理裝置內一加熱燈具的密度變化之一種狀態；第17圖繪示了依據本發明之第三實施例之應用於一基板處理裝置內之不同輸出的數個加熱燈具之一種狀態；第18圖繪示了依據本發明之一實施例之一種基板處理方法；以及第19圖繪示了依據本發明之一實施例之於一種基板處理裝置與一種基板處理方法內之一液態化學品的供應與加熱。 1 is a front elevational view of a substrate processing apparatus in accordance with an embodiment of the present invention; 2 is a view showing a state in which a liquid chemical is supplied in a substrate processing apparatus according to an embodiment of the present invention; and FIG. 3 is a view showing a first embodiment of the present invention in a substrate processing apparatus; Spraying a state of a liquid chemical; FIG. 4 is a view showing a region in which a liquid chemical is sprayed in a substrate processing apparatus according to the first embodiment of the present invention; and FIG. 5 is a view showing the first aspect of the present invention. An embodiment of a state in which a change in output of a heating lamp in a substrate processing apparatus is changed; and FIG. 6 is a diagram showing a density change of a heating lamp in a substrate processing apparatus according to the first embodiment of the present invention. a state; FIG. 7 illustrates a state of a plurality of heating lamps applied to different outputs of a substrate processing apparatus according to the first embodiment of the present invention; and FIG. 8 illustrates a second embodiment according to the present invention a state in which a liquid chemical is sprayed in a substrate processing apparatus; FIG. 9 is a view showing a region in which a liquid chemical is sprayed in a substrate processing apparatus according to a second embodiment of the present invention; A state in which a change in output of a heating lamp in a substrate processing apparatus according to a second embodiment of the present invention is illustrated; and FIG. 11 is a view showing a second embodiment of the present invention in a substrate processing apparatus a state in which the density of the heating lamp is changed; FIG. 12 is a view showing a state of a plurality of heating lamps applied to different outputs of a substrate processing apparatus according to the second embodiment of the present invention; FIG. 13 is a view showing A third embodiment of the invention is a state in which a liquid chemical is sprayed in a substrate processing apparatus; Figure 14 is a view showing a region of a liquid processing chemical sprayed in a substrate processing apparatus according to a third embodiment of the present invention; and Figure 15 is a view showing a substrate processing apparatus according to a third embodiment of the present invention. a state in which the output of the heating lamp is changed; FIG. 16 is a view showing a state of density change of a heating lamp in a substrate processing apparatus according to the third embodiment of the present invention; FIG. 17 is a view showing A third embodiment of the invention is applied to a state of a plurality of heating lamps of different outputs in a substrate processing apparatus; FIG. 18 is a diagram showing a substrate processing method according to an embodiment of the present invention; and FIG. A supply and heating of a liquid chemical in a substrate processing apparatus and a substrate processing method according to an embodiment of the present invention is shown.
於下文中，將配合所附圖式詳細說明依據本發明之數個實施例之一種基板處理裝置與方法。 Hereinafter, a substrate processing apparatus and method according to several embodiments of the present invention will be described in detail with reference to the accompanying drawings.
為了方面與清楚的描述，於製程中之圖式內所示的線路的厚度與構件尺寸係經過誇大。以下描述的術語係考量到本發明之功用而定義，且可依照使用者或操作者的意向與通常作法而變化。因此，術語的意義可基於本發明的總體內容而解釋。 For the sake of clarity and description, the thickness and component dimensions of the lines shown in the drawings in the process are exaggerated. The terms described below are defined in consideration of the utility of the present invention and may vary depending on the intention and usual practice of the user or operator. Thus, the meaning of the term can be interpreted based on the general content of the invention.
第1圖為依據本發明之一實施例之一種基板處理裝置之一前視圖，而第2圖繪示了依據本發明之一實施例之於一基板處理裝置內供應一液體化學品之一種狀態。 1 is a front view of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a view showing a state in which a liquid chemical is supplied to a substrate processing apparatus according to an embodiment of the present invention. .
請參照第1圖與第2圖，依據本發明之一實施例之 一種基板處理裝置1包括了一基板支撐件100、一液體化學品供應件200，以及一基板加熱件300。 Please refer to FIG. 1 and FIG. 2, according to an embodiment of the present invention. A substrate processing apparatus 1 includes a substrate support member 100, a liquid chemical supply member 200, and a substrate heating member 300.
基板支撐件100支撐與旋轉一基板S。依據本實施例，此基板支撐件100包括一吸附台單元(chuck table unit)110、一轉軸單元(rotary shaft unit)130、與一驅動單元(driving unit)150。 The substrate support 100 supports and rotates a substrate S. According to the embodiment, the substrate support member 100 includes a chuck table unit 110, a rotary shaft unit 130, and a driving unit 150.
吸附台單元110支撐了基板S。依據本實施例，吸附台單元110包括一吸附台(chuck table)111、一固定銷(fixing pin)113與一吸附銷(chuck pin)115。 The adsorption stage unit 110 supports the substrate S. According to the embodiment, the adsorption stage unit 110 includes a chuck table 111, a fixing pin 113 and a chuck pin 115.
吸附台111的一中央部係耦接於轉軸單元130，而與轉軸單元130一起旋轉。依據本實施例，吸附台111係形成為一平板狀，而固定銷113與吸附銷115係設置於吸附台111之上方側。 A central portion of the adsorption stage 111 is coupled to the rotating shaft unit 130 to rotate together with the rotating shaft unit 130. According to the present embodiment, the adsorption stage 111 is formed in a flat shape, and the fixing pin 113 and the adsorption pin 115 are disposed on the upper side of the adsorption stage 111.
固定銷113的一下端部係依照螺栓或相似方式而耦接於吸附台111，而基板S係座落於固定銷113的上端部。 The lower end portion of the fixing pin 113 is coupled to the suction stage 111 in accordance with a bolt or the like, and the substrate S is seated on the upper end portion of the fixing pin 113.
吸附銷115支撐了基板S的一週邊部，而因此避免了基板S的分離。吸附銷115藉由一移動部(未顯示)而於一支撐位置(supporting position)與一待機位置(standby position)之間移動。在此，支撐位置係指吸附銷115而被帶至接觸基板S的週邊部之一位置，而待機位置係指吸附銷115與基板S的週邊部相分隔之一位置，使得基板S可設置於待機位置上或自待機位置處脫離。 The adsorption pin 115 supports a peripheral portion of the substrate S, and thus the separation of the substrate S is avoided. The adsorption pin 115 is moved between a supporting position and a standby position by a moving portion (not shown). Here, the support position refers to a position where the adsorption pin 115 is brought to one of the peripheral portions of the contact substrate S, and the standby position refers to a position at which the adsorption pin 115 is separated from the peripheral portion of the substrate S, so that the substrate S can be disposed at Disengaged from the standby position or from the standby position.
轉軸單元130係連結於吸附台111的一旋轉中心，並藉由驅動單元150與吸附台110一起旋轉。 The rotating shaft unit 130 is coupled to a rotation center of the adsorption stage 111, and is rotated together with the adsorption stage 110 by the driving unit 150.
驅動單元150包括了轉換外部施加的電能成為旋轉能量之一電動馬達或相似物，並採用此旋轉能量旋轉了轉軸單元130。 The driving unit 150 includes an electric motor or the like that converts externally applied electric energy into one of rotational energy, and rotates the rotating shaft unit 130 with this rotational energy.
液體化學品供應件200供應了液體化學品至基板S。依據本實施例，液體化學品供應件200包括一液體化學品儲存單元210、一液體化學品供應單元230與一供應調整單元250。 The liquid chemical supply 200 supplies liquid chemicals to the substrate S. According to the present embodiment, the liquid chemical supply member 200 includes a liquid chemical storage unit 210, a liquid chemical supply unit 230, and a supply adjustment unit 250.
於液體化學品儲存單元210中，儲存了液體化學品。依據本實施例，液體化學品儲存單元210的形狀與材料可依照液體化學品的種類與成分而變化。此外，可依照欲儲存之液態化學品的種類而提供用於其各種類之液態化學品之複數個液體化學品儲存單元210，並包括用於分別地加熱液體化學品之一加熱裝置。 In the liquid chemical storage unit 210, a liquid chemical is stored. According to the present embodiment, the shape and material of the liquid chemical storage unit 210 may vary depending on the kind and composition of the liquid chemical. Further, a plurality of liquid chemical storage units 210 for liquid chemicals of various types thereof may be provided in accordance with the kind of liquid chemical to be stored, and include one heating means for separately heating the liquid chemicals.
液體化學品供應單元230係設置於基板S的上方側，使得液體化學品可供應至基板S的處理表面上，並噴灑(sprays)液體化學品至基板S處。依據本實施例，液體化學品供應單元230可為噴灑液體化學品至基板S的處理表面之一噴嘴，並依照基板S的尺寸、液體化學品的種類等而採用具有不同型態與形狀的噴嘴。 The liquid chemical supply unit 230 is disposed on the upper side of the substrate S such that liquid chemicals can be supplied onto the processing surface of the substrate S and spray liquid chemicals to the substrate S. According to the embodiment, the liquid chemical supply unit 230 may be a nozzle that sprays the liquid chemical to the processing surface of the substrate S, and adopts nozzles having different types and shapes according to the size of the substrate S, the kind of the liquid chemical, and the like. .
供應調整單元250係連結了液體化學品儲存單元210以及液體化學供應單元230，並導引液體化學品儲存單元210之液體化學品被供應至液體化學品供應單元230。依據本實施例，供應調整單元250包括一液體化學品導管251及一流速調節閥253。 The supply adjustment unit 250 is coupled to the liquid chemical storage unit 210 and the liquid chemical supply unit 230, and directs the liquid chemical of the liquid chemical storage unit 210 to the liquid chemical supply unit 230. According to the embodiment, the supply adjustment unit 250 includes a liquid chemical conduit 251 and a flow rate adjustment valve 253.
液體化學品導管251被製成兩個尾端分別連結於 液體化學品儲存單元210及液體化學品供應單元230之一管線形狀，並導引液體化學品移動穿過形成於液體化學品導管251內側之一通孔。 The liquid chemical conduit 251 is made into two tail ends that are respectively connected to The liquid chemical storage unit 210 and the liquid chemical supply unit 230 are in the shape of a line and guide the liquid chemical to move through a through hole formed inside the liquid chemical conduit 251.
流速調節閥253係連結於液體化學導管251，並調節通過液體化學品供應單元230之一液體化學品的流速。 The flow rate adjustment valve 253 is coupled to the liquid chemical conduit 251 and regulates the flow rate of the liquid chemical through one of the liquid chemical supply units 230.
依據本實施例，流速調節閥253控制了流通液體化學品導管251之液體化學品的流速，使得液體化學品可週期性地供應一預定時間。在此，預定時間係指施行於基板S之的蝕刻處理等之一處理製程內之處理基板S之一製程時間，而依據基板S的類型、液體化學品、加熱時間等而計算出之時間資訊可預先設定於一控制件500或相似物中。 According to the present embodiment, the flow rate adjusting valve 253 controls the flow rate of the liquid chemical flowing through the liquid chemical conduit 251 so that the liquid chemical can be periodically supplied for a predetermined time. Here, the predetermined time refers to a process time of one of the processing substrates S in one of the etching processes performed by the substrate S, and the time information calculated according to the type of the substrate S, the liquid chemicals, the heating time, and the like. It can be preset in a control member 500 or the like.
此外，液體化學品的週期性供應意謂著當依照相同方式重複之預定量之液體化學品供應至基板S及於其液體化學品供應至基板S之一供應時間之一時間點。當假設於液體化學品與於基板S內之欲處理等之一物體之間的具有一特定溫度之反應為固定不變的，噴灑液態化學品之時間點可同樣地設定做為一製程時間，而液體化學品可週期性地供應。 Further, the periodic supply of the liquid chemical means a time point when a predetermined amount of liquid chemicals are supplied to the substrate S and a supply time of one of the liquid chemicals supplied to the substrate S is repeated in the same manner. When it is assumed that the reaction with a specific temperature between the liquid chemical and an object to be treated in the substrate S is fixed, the time point at which the liquid chemical is sprayed can be similarly set as a process time. Liquid chemicals can be supplied periodically.
此外，當液體化學品與欲處理物體之間的反應速率為變化的，舉例來說，當欲處理之物體的剩餘量於處理製程中減少時，使得用於反應所需的液體化學品的量也減少，可以調整噴灑液體化學品的時間點以及這期間所噴灑的液體化學品的時間，例如延遲何時噴灑液體化學品之時間點或降低這期間噴灑液體化學品的時間，而調整的時間點以及時間可依照如時間、流速、或相似物之資訊而預先儲存於控制件500內。 Further, when the rate of reaction between the liquid chemical and the object to be treated is varied, for example, when the remaining amount of the object to be treated is reduced in the treatment process, the amount of liquid chemical required for the reaction is made It also reduces the time at which the liquid chemical is sprayed and the time of the liquid chemical sprayed during this period, such as the time when the liquid chemical is sprayed or the time during which the liquid chemical is sprayed, and the time of adjustment And the time may be pre-stored in the control unit 500 according to information such as time, flow rate, or the like.
依據本實施例，基板處理裝置1可更包括一液體化學品量測件270。 According to the embodiment, the substrate processing apparatus 1 may further include a liquid chemical measuring member 270.
化學品量測件270係設置於基板支撐件100之一側，量測了供應至基板S之液體化學品的數量與成分，液體化學品係藉由基板S的旋轉、重力等而分離至基板S的外側，並傳遞量測數值至控制件500。 The chemical measuring device 270 is disposed on one side of the substrate support 100, and measures the quantity and composition of the liquid chemicals supplied to the substrate S, and the liquid chemicals are separated to the substrate by the rotation, gravity, or the like of the substrate S. The outside of S is transmitted and the measured value is transmitted to the control member 500.
依據本實施例，當為液態化學品量測件270所量測之液態化學品的流速為一設定值或更少時，或當如水或腐蝕性試劑之液態化學品的一特定成分的含量係少於預先設定之一參考值，控制件500係藉由控制流速調節閥253而供應液體化學品至基板S。 According to the present embodiment, when the flow rate of the liquid chemical measured by the liquid chemical measuring member 270 is a set value or less, or when the content of a specific component of the liquid chemical such as water or a corrosive agent is The control member 500 supplies the liquid chemical to the substrate S by controlling the flow rate adjusting valve 253, less than a preset reference value.
基板加熱件300藉由依照自液態化學品供應單元230所噴灑而供應至基板S之液態化學品之一位置而改變一加熱程度而加熱基板S。此即為，基板加熱件300依照位於基板S上之位置而藉由改變加熱程度而加熱基板S上因液態化學品的供應所造成的基板S的溫度局部降低而加熱基板S，進而依照基板S的位置而平衡基板S的溫度。依照本實施例，基板加熱件300包括一燈具安裝單元310以及一加熱燈具單元330。 The substrate heating member 300 heats the substrate S by changing the degree of heating in accordance with a position of one of the liquid chemicals supplied from the liquid chemical supply unit 230 to the substrate S. That is, the substrate heating member 300 heats the substrate S by heating the substrate S on the substrate S by changing the degree of heating to locally lower the temperature of the substrate S caused by the supply of the liquid chemical, and further according to the substrate S. The position of the substrate S is balanced. According to the embodiment, the substrate heating element 300 includes a lamp mounting unit 310 and a heating lamp unit 330.
燈具安裝單元310係設置於基板S的上方側並支撐了加熱燈具單元330。依照本實施例，燈具安裝單元310係由形成平板狀之金屬材料所製成，並耦接於一處理製程腔室(未顯示)等。 The lamp mounting unit 310 is disposed on the upper side of the substrate S and supports the heating lamp unit 330. According to the embodiment, the lamp mounting unit 310 is made of a metal material forming a flat plate and coupled to a processing process chamber (not shown) or the like.
加熱燈具單元330係耦接於燈具安裝單元310，包括複數個加熱燈具331，並調整對應於噴灑有液態化學品之基 板S之一區域之基板加熱件300之一區域內的每單位區域的輸出而加熱基板S。 The heating lamp unit 330 is coupled to the lamp mounting unit 310, and includes a plurality of heating lamps 331 and is adjusted to correspond to a base for spraying liquid chemicals. The substrate S is heated by the output per unit area in one of the regions of the substrate heating member 300 in one of the regions S.
依據本實施例，加熱燈具單元330藉由調整設置於基板加熱件300之區域內對應於供應有液體化學品之基板S的區域內之加熱燈具331的輸出而調整了單位區域的輸出，其為當液體化學品供應至基板S處時設置於對應於與液體化學品接觸之基板S之一區域之基板加熱件300的區域，特別地為設置於與液體化學品接觸之基板S之區域之一垂直線的上方側或下方側之上之區域。 According to the present embodiment, the heating lamp unit 330 adjusts the output of the unit area by adjusting the output of the heating lamp 331 disposed in the region of the substrate heating member 300 corresponding to the substrate S to which the liquid chemical is supplied, which is a region of the substrate heating member 300 corresponding to a region of the substrate S in contact with the liquid chemical when the liquid chemical is supplied to the substrate S, particularly one of the regions disposed in the substrate S in contact with the liquid chemical The area above the upper or lower side of the vertical line.
設置於基板加熱件300內對應於供應有液體化學品之基板S區域之一區域之基板加熱燈具330的輸出的調整方法可多樣化地施行。舉例來說，可能為介於複數個加熱燈具331間之部分加熱燈具331之輸出的調整方法、每單位區域之加熱燈具331的數量之調整方法、輸出、尺寸、及相似條件為不一樣的加熱燈具331之應用方法。 The adjustment method of the output of the substrate heating lamp 330 disposed in the substrate heating member 300 corresponding to a region of the substrate S region to which the liquid chemical is supplied can be variously performed. For example, the method of adjusting the output of the portion of the heating lamp 331 between the plurality of heating lamps 331, the method of adjusting the number of the heating lamps 331 per unit area, the output, the size, and the like are different heating. The application method of the lamp 331.
第一，於具有相同尺寸之數個加熱燈具331均勻地設置的狀態下，藉由調整設置於對應於基板S的供應有液體化學品區域之基板加熱件300的區域而調整加熱燈具331的輸出，供應液體化學品至基板S的區域可被集中加熱，進而依照液體化學品的供應而降低基板的溫度的不均勻性。 First, in a state where a plurality of heating lamps 331 having the same size are uniformly disposed, the output of the heating lamp 331 is adjusted by adjusting an area of the substrate heating member 300 provided to the liquid chemical region corresponding to the substrate S. The area where the liquid chemical is supplied to the substrate S can be heated centrally, thereby reducing the temperature non-uniformity of the substrate in accordance with the supply of the liquid chemical.
作為如此之加熱燈具331的輸出的調整情形，亦可能為於下文中所描述之預先決定自液體化學供應單元230噴灑液體化學品之位置以及基於所決定位置而調整用於加熱對應位置之加熱燈具331的輸出之一種方法，或為藉由控制件500基 於藉由一溫度量測件400量測得到之基板S之即時溫度而調整部分之加熱燈具331的輸出之一種方法。 As an adjustment of the output of such a heating lamp 331, it is also possible to predetermine the position at which the liquid chemical supply unit 230 sprays the liquid chemical in advance and adjust the heating lamp for heating the corresponding position based on the determined position. a method of outputting 331, or A method of adjusting the output of a portion of the heating lamp 331 by measuring the instantaneous temperature of the substrate S as measured by a temperature measuring member 400.
或者，亦可能為藉由改變此複數個加熱燈具331之設置而補償基板S溫度之一種方法。因此，便可能可以藉由調整加熱燈具331的密度而補償基板S溫度，其即為加熱燈具331的設置情形或配置加熱燈具331其輸出或形狀為不同的。 Alternatively, it is also possible to compensate for the temperature of the substrate S by changing the arrangement of the plurality of heating lamps 331. Therefore, it is possible to compensate the substrate S temperature by adjusting the density of the heating lamp 331, which is the setting of the heating lamp 331 or the configuration of the heating lamp 331 whose output or shape is different.
第3圖繪示了依據本發明之第一實施例之於一基板處理裝置內噴灑一液體化學品之一種狀態，而第4圖繪示了依據本發明之第一實施例之於一基板處理裝置內噴灑一液體化學品之一區域。 3 is a view showing a state in which a liquid chemical is sprayed in a substrate processing apparatus according to the first embodiment of the present invention, and FIG. 4 is a view showing a substrate processing according to the first embodiment of the present invention. An area of a liquid chemical is sprayed into the device.
請參照第3圖與第4圖，當自一液體化學品供應單元230a噴灑之液體化學品被噴灑至基板S之一區域”A”時，降低了基板S的區域”A”的溫度。為了藉由補償所降低溫度或避免溫度免於降低而補償基板S的溫度，便需要較基板S的其他區域而更強烈地加熱基板S的區域”A”。 Referring to FIGS. 3 and 4, when the liquid chemical sprayed from a liquid chemical supply unit 230a is sprayed to a region "A" of the substrate S, the temperature of the region "A" of the substrate S is lowered. In order to compensate for the temperature of the substrate S by compensating for the lowered temperature or avoiding the temperature from being lowered, it is necessary to heat the region "A" of the substrate S more strongly than the other regions of the substrate S.
第5圖繪示了依據本發明之第一實施例之於一基板處理裝置內一加熱燈具的輸出變化之一種狀態，第6圖繪示了依據本發明之第一實施例之於一基板處理裝置內一加熱燈具的密度改變之一種狀態，第7圖繪示了依據本發明之第一實施例之應用於一基板處理裝置之不同輸出的數個加熱燈具之一種狀態。 5 is a view showing a state of change of output of a heating lamp in a substrate processing apparatus according to the first embodiment of the present invention, and FIG. 6 is a view showing processing of a substrate according to the first embodiment of the present invention. A state in which the density of a heating lamp in the apparatus is changed, and FIG. 7 is a view showing a state of a plurality of heating lamps applied to different outputs of a substrate processing apparatus according to the first embodiment of the present invention.
請參照第5-7圖，繪示了一種調整加熱燈具單元330之輸出的方法。當施加至設置於對應基板S之區域”A”之基板加熱件300之一區域”A”之複數個加熱燈具331中之一加熱燈具 331a的輸出增加時，增加了由基板加熱件300之區域”A”所加熱而傳輸至基板S之區域”A”之熱傳輸量，並進而升高了供應有液體化學品之基板S的區域”A”的溫度，使得基板S的區域”A”的溫度得到補償(請參照第5圖)。 Referring to Figures 5-7, a method of adjusting the output of the heating lamp unit 330 is illustrated. One of the plurality of heating lamps 331 applied to one of the regions "A" of the substrate heating member 300 disposed in the region "A" of the corresponding substrate S heats the lamp When the output of 331a is increased, the heat transfer amount of the region "A" heated by the region "A" of the substrate heating member 300 and transferred to the substrate S is increased, and the region of the substrate S supplied with the liquid chemical is further raised. The temperature of "A" is such that the temperature of the region "A" of the substrate S is compensated (please refer to Fig. 5).
由基板加熱件300之區域”A”所發出的熱量可如前所述(請參照第6圖)般增加每單位面積的加熱燈具331b的數量，或可採用具有大輸出或不同形狀的加熱燈具331c與331d以補償基板S的區域”A”的溫度(請參照第7圖)。 The amount of heat emitted by the area "A" of the substrate heating member 300 can be increased as described above (please refer to FIG. 6) as the number of the heating lamps 331b per unit area, or a heating lamp having a large output or a different shape can be used. 331c and 331d compensate the temperature of the region "A" of the substrate S (please refer to Fig. 7).
第8圖繪示了依據本發明之第二實施例之於一基板處理裝置內噴灑一液體化學品之一種狀態，以及第9圖繪示了依據本發明之第二實施例之於一基板處理裝置內噴灑一液體化學品之一區域。 8 is a view showing a state in which a liquid chemical is sprayed in a substrate processing apparatus according to a second embodiment of the present invention, and FIG. 9 is a view showing a substrate processing according to a second embodiment of the present invention. An area of a liquid chemical is sprayed into the device.
請參照第8圖與第9圖，繪示了採用棒狀液體化學品供應單元230b之一範例。於第8圖中，此棒狀液體化學品供應單元230b係形成並自基板S之旋轉中心C而輻射狀地延伸，而於此範例中，如第9圖所示之基板S之區域”B”可噴灑有液體化學品，使得基板S之區域”B”的溫度可能降低。 Referring to Figures 8 and 9, an example of the use of a rod-shaped liquid chemical supply unit 230b is illustrated. In FIG. 8, the rod-like liquid chemical supply unit 230b is formed and radially extended from the rotation center C of the substrate S, and in this example, the area of the substrate S as shown in FIG. "The liquid chemical can be sprayed so that the temperature of the region "B" of the substrate S may be lowered.
第10圖繪示了依據本發明之第二實施例之於一基板處理裝置內一加熱燈具的輸出變化之一種狀態，第11圖繪示了依據本發明之第二實施例之於一基板處理裝置內一加熱燈具的密度變化之一種狀態，第12圖繪示了依據本發明之第二實施例之應用於一基板處理裝置之不同輸出的數個加熱燈具之一種狀態。 10 is a view showing a state in which a change in output of a heating lamp in a substrate processing apparatus according to a second embodiment of the present invention, and FIG. 11 is a view showing processing in a substrate according to a second embodiment of the present invention. A state in which the density of a heating lamp in the apparatus changes, and FIG. 12 illustrates a state of a plurality of heating lamps applied to different outputs of a substrate processing apparatus according to the second embodiment of the present invention.
請參照第10-12圖，繪示了調整了對應於基板S之區 域”B”之基板加熱件300之一區域”B’”內設置之加熱燈具331的輸出之一範例。此即為，依據本發明之第二實施例，基板S之區域”B”的溫度的減低可藉由增加對應於基板加熱件300之區域”B”之加熱燈具331a的輸出(參照第10圖)、增加對應位置的加熱燈具331b的密度(參照第11圖)、或應用於對應位置之不同尺寸、形狀、輸出等之一加熱燈具331e(參照第12圖)而補償，以藉由加熱燈具331a增加基板加熱件300之區域”B’”的輸出。 Please refer to the figure 10-12, and the area corresponding to the substrate S is adjusted. An example of the output of the heating fixture 331 disposed within one of the regions "B'" of the substrate heater 300 of the domain "B". That is, according to the second embodiment of the present invention, the temperature of the region "B" of the substrate S can be reduced by increasing the output of the heating lamp 331a corresponding to the region "B" of the substrate heating member 300 (refer to FIG. 10). ), increasing the density of the corresponding position of the heating lamp 331b (refer to FIG. 11), or applying to a heating lamp 331e (refer to FIG. 12) of a different size, shape, output, etc. of the corresponding position, to compensate by heating the lamp 331a increases the output of the region "B'" of the substrate heating member 300.
第13圖繪示了依據本發明之第三實施例之於一基板處理裝置內噴灑一液體化學品之一種狀態，以及第14圖繪示了依據本發明之第三實施例之於一基板處理裝置內噴灑有一液體化學品之一區域。 Figure 13 is a view showing a state in which a liquid chemical is sprayed in a substrate processing apparatus according to a third embodiment of the present invention, and Figure 14 is a view showing a substrate processing according to a third embodiment of the present invention. An area of liquid chemicals is sprayed into the apparatus.
請參照第13圖與第14圖，繪示了當沿著一特定路徑移動時噴灑一液體化學品之一液體化學品供應單元230c。於第13圖中，當應用此可移動液體化學品供應單元230c時，繪示了噴灑有液體化學品的基板S之區域”C”。 Referring to Figures 13 and 14, there is illustrated a liquid chemical supply unit 230c that sprays one of the liquid chemicals as it moves along a particular path. In Fig. 13, when the movable liquid chemical supply unit 230c is applied, the area "C" of the substrate S sprayed with the liquid chemical is shown.
第15圖繪示了依據本發明之第三實施例之於一基板處理裝置內一加熱燈具的輸出變化之一種狀態，第16圖繪示了依據本發明之第三實施例之於一基板處理裝置內一加熱燈具的密度變化之一種狀態，以及第17圖繪示了依據本發明之第三實施例之應用於一基板處理裝置之不同輸出的數個加熱燈具之一種狀態。 15 is a view showing a state of change in output of a heating lamp in a substrate processing apparatus according to a third embodiment of the present invention, and FIG. 16 is a view showing processing of a substrate in accordance with a third embodiment of the present invention. A state in which the density of a heating lamp in the apparatus changes, and FIG. 17 illustrates a state in which a plurality of heating lamps applied to different outputs of a substrate processing apparatus according to the third embodiment of the present invention.
請參照第15-17圖，繪示了調整對應於基板S之區域”C”之基板加熱件300之一區域”C’”內設置的加熱燈具331的輸出之一狀態。其為，依據本發明之第三實施例，基板S的區 域”C”的溫度的降低可藉由增加對應於基板加熱件300之區域”C’”的加熱燈具331a的輸出(參照第15圖)、增加對應位置的加熱燈具331b的密度(參照第16圖)、或應用於對應位置之尺寸、形狀、輸出或相似物不同之一加熱燈具331f(參照第17圖)而補償，以藉由加熱燈具331增加基板加熱件300之區域”C’”的輸出。 Referring to Figures 15-17, one state of the output of the heating lamp 331 disposed in a region "C'" of the substrate heating member 300 corresponding to the region "C" of the substrate S is illustrated. It is a region of the substrate S according to the third embodiment of the present invention. The temperature of the domain "C" can be lowered by increasing the output of the heating lamp 331a corresponding to the region "C'" of the substrate heating member 300 (refer to Fig. 15), and increasing the density of the heating lamp 331b at the corresponding position (refer to the 16th). Figure </ RTI> or a heating luminaire 331f (refer to Figure 17) that is applied to a corresponding position, size, shape, output or similarity to compensate for increasing the area "C" of the substrate heating member 300 by heating the illuminator 331 Output.
依據本實施例，基板處理裝置1可更包括一溫度量測件400以及一控制件500。溫度量測件400量測了基板S的溫度，並傳輸經量測之溫度值至控制件500處。依據本實施例，溫度量測件400係繪示為一高溫溫度計(pyrometer)，且包括了安裝於吸附台單元110內並量測基板S的溫度之複數個溫度量測單元410。 According to the embodiment, the substrate processing apparatus 1 further includes a temperature measuring component 400 and a control component 500. The temperature measuring member 400 measures the temperature of the substrate S and transmits the measured temperature value to the control member 500. According to the embodiment, the temperature measuring component 400 is illustrated as a pyrometer, and includes a plurality of temperature measuring units 410 installed in the adsorption stage unit 110 and measuring the temperature of the substrate S.
控制件500依據藉由溫度量測件400所量測到之基板S的溫度分佈而調整了加熱燈具331的輸出。依據本實施例，控制件500藉由基於自溫度量測件400傳輸至基板S的每部分之溫度而預先指派加熱燈具331的輸出或調整施加於燈具331的功率而調整了加熱燈具331的輸出。 The control member 500 adjusts the output of the heating lamp 331 in accordance with the temperature distribution of the substrate S measured by the temperature measuring member 400. According to the present embodiment, the control member 500 adjusts the output of the heating lamp 331 by pre-assigning the output of the heating lamp 331 or adjusting the power applied to the lamp 331 based on the temperature of each portion transmitted from the temperature measuring member 400 to the substrate S. .
第18圖繪示了依據本發明之一實施例之一種基板處理方法。 Figure 18 illustrates a substrate processing method in accordance with an embodiment of the present invention.
請參照第1圖與第18圖，依據本發明之一實施例之一種基板處理方法包括一製程準備操作S100、一製程操作S200、一基板潔淨操作S300，以及一基板傳輸操作S400。 Referring to FIGS. 1 and 18, a substrate processing method according to an embodiment of the present invention includes a process preparation operation S100, a process operation S200, a substrate cleaning operation S300, and a substrate transfer operation S400.
製程準備操作S100為關於基板S之蝕刻等操作之一準備操作。基板S係座落於設置於一製程腔室之內側之一基 板支撐件100上。於操作S110中，為了可使基板S座落於基板支撐件100上，吸附銷115係移動至待機位置，基板S則座落於固定銷113的上側，而接著吸附銷115係移至支撐位置，從而可避免基板S於對應製程免於分離。 The process preparation operation S100 is a preparation operation for one of operations such as etching of the substrate S. The substrate S is located on a base disposed on the inner side of a process chamber On the plate support 100. In operation S110, in order to allow the substrate S to be seated on the substrate support 100, the adsorption pin 115 is moved to the standby position, the substrate S is seated on the upper side of the fixing pin 113, and then the adsorption pin 115 is moved to the support position. Therefore, the substrate S can be prevented from being separated from the corresponding process.
於操作S130中，當基板S係固定於卡鉗工作台單元110時，控制件500轉動卡鉗工作台110以及轉動單元130藉由驅動單元150。 In operation S130, when the substrate S is fixed to the caliper table unit 110, the control member 500 rotates the caliper table 110 and the rotation unit 130 by the driving unit 150.
當旋轉時吸附台100時，控制件500藉由流速調節閥253的控制而透過液體化學品供應單元230噴灑液體化學品至基板S。於操作S150中，當基板S旋轉時，液體化學品依照噴灑到基板S之一方式而應用至基板S。 When the stage 100 is rotated while rotating, the control member 500 sprays the liquid chemical to the substrate S through the liquid chemical supply unit 230 by the control of the flow rate adjusting valve 253. In operation S150, when the substrate S is rotated, the liquid chemical is applied to the substrate S in accordance with one of the methods of spraying onto the substrate S.
製程操作S200對應於於基板S上如蝕刻之施行製程之一種操作。當供應液體化學品時，控制件500採用基板加熱件300加熱基板S。於操作S210中，當應用包括腐蝕性藥劑或相似物之液體化學品之一狀態下加熱基板S時，可施行如蝕刻之處理操作。 The process operation S200 corresponds to an operation on the substrate S such as an etching process. When the liquid chemical is supplied, the control member 500 heats the substrate S using the substrate heating member 300. In operation S210, when the substrate S is heated in a state in which one of the liquid chemicals including the corrosive agent or the like is applied, a processing operation such as etching may be performed.
第19圖繪示了依據本發明之一實施例之於一種基板處理裝置與一種基板處理方法內之一液體化學品的供應與加熱。 Figure 19 is a diagram showing the supply and heating of a liquid chemical in a substrate processing apparatus and a substrate processing method according to an embodiment of the present invention.
請參照第19圖，於為蝕刻操作之一處理操作終，於基板S處間歇地供應一液體化學品。當於製程操作時液體化學品與欲處理物體之間的發生反應時，或當液體化學品流至基板S之外側時，液體化學品的數量會減少至低於一所需數量且因此基板S的處理操作會變得不均勻。 Referring to FIG. 19, a liquid chemical is intermittently supplied to the substrate S at the end of one of the etching operations. When a reaction occurs between the liquid chemical and the object to be treated during the process operation, or when the liquid chemical flows to the outside of the substrate S, the amount of the liquid chemical is reduced to less than a desired amount and thus the substrate S The processing operations will become uneven.
於處理操作中，控制件500可藉由液體化學品供應單元200的控制而週期性的提供液體化學品至基板S處一設定時間，或基於由用於量測液體化學品的成分或殘留量之液體化學品量測件270或相似物所量測到之一量測值而分析殘留於基板S上液體化學品的成分或殘留量，且當量測值為一設定值或更少時，噴灑液體化學品至基板S上。如此之基板S的加熱以及液體化學品的間歇性供應可施行一特定製程時間。 In the processing operation, the control member 500 may periodically provide the liquid chemical to the substrate S for a set time by the control of the liquid chemical supply unit 200, or based on the component or residual amount used for measuring the liquid chemical. When the liquid chemical measuring component 270 or the like measures one of the measured values and analyzes the component or the residual amount of the liquid chemical remaining on the substrate S, and the equivalent measured value is a set value or less, Spray liquid chemicals onto the substrate S. Such heating of the substrate S and intermittent supply of liquid chemicals can be performed for a specific process time.
當液體化學品係供應至基板S時，供應有液體化學品之基板S之一區域的溫度會低於其他區域的溫度。 When the liquid chemical is supplied to the substrate S, the temperature of one of the regions of the substrate S to which the liquid chemical is supplied may be lower than the temperature of the other regions.
當透過液體化學品供應單元230而噴灑有液體化學品之基板S之一區域供應為固定的，基板S的區域的溫度降低可藉由增加對應於基板S之區域之基板加熱件300之區域內所設置之加熱燈具331的輸出而補償之。 When a region of the substrate S sprayed with the liquid chemical through the liquid chemical supply unit 230 is supplied as a fixed region, the temperature of the region of the substrate S is lowered by increasing the region of the substrate heating member 300 corresponding to the region of the substrate S. The output of the heating lamp 331 is set to compensate.
如前所述，為了補償供應液體化學品之基板的區域的溫度，可採用改變對應於基板的區域之基板加熱件300的區域內設置的加熱燈具331的輸出的方法。 As described above, in order to compensate the temperature of the region of the substrate on which the liquid chemical is supplied, a method of changing the output of the heating lamp 331 provided in the region of the substrate heating member 300 corresponding to the region of the substrate may be employed.
於操作S230中，當抵達一設定製程時間時，於操作S300中控制件500藉由供應一潔淨用試劑或相似物至基板S而潔淨了基板S，而當潔淨完成之後，於操作S400中控制件500採用一基板傳輸裝置(未顯示)傳輸了基板S至製程腔室的外側。 In operation S230, when a set process time is reached, the control unit 500 cleans the substrate S by supplying a cleaning reagent or the like to the substrate S in operation S300, and after the cleaning is completed, controlling in operation S400. The member 500 transports the substrate S to the outside of the process chamber using a substrate transfer device (not shown).
依據本實施例，基板處理裝置1可調整對應於供應有液體化學品之基板區域之基板加熱件的區域內設置之加熱燈具331的輸出，進而補償了溫度，且進而均勻地維持了基板S 的溫度。 According to the present embodiment, the substrate processing apparatus 1 can adjust the output of the heating lamp 331 disposed in the area corresponding to the substrate heating member of the substrate region to which the liquid chemical is supplied, thereby compensating for the temperature, and thereby uniformly maintaining the substrate S. temperature.
因此，依據本實施例，基板處理裝置1可採用溫度量測件400與控制件500調整加熱燈具單元330的輸出，進而即時地調整基板S的溫度的均勻度。 Therefore, according to the present embodiment, the substrate processing apparatus 1 can adjust the output of the heating lamp unit 330 by using the temperature measuring component 400 and the control member 500, thereby instantly adjusting the uniformity of the temperature of the substrate S.
此外，依據本實施例，基板處理裝置1及基板處理方法可間歇地供應液體化學品至基板並進而可確保基板的處理製程的均勻性以及避免因缺乏液體化學品或相似物所造成的基板品質的劣化，使得穩定之一基板處理製程成為可能。 In addition, according to the present embodiment, the substrate processing apparatus 1 and the substrate processing method can intermittently supply liquid chemicals to the substrate and thereby ensure uniformity of the processing process of the substrate and avoid substrate quality caused by lack of liquid chemicals or the like. The deterioration makes it possible to stabilize one of the substrate processing processes.
如前所述，依據本發明之基板處理裝置與基板處理方法，可調整對應於供應有液體化學品之基板的區域之設置於基板加熱件的區域內之加熱燈具單元的輸出以補償溫度，並進而可均勻地維持基板的溫度。 As described above, according to the substrate processing apparatus and the substrate processing method of the present invention, the output of the heating lamp unit disposed in the region of the substrate heating member corresponding to the region of the substrate to which the liquid chemical is supplied can be adjusted to compensate the temperature, and Further, the temperature of the substrate can be uniformly maintained.
此外，依據本發明，加熱燈具單元的輸出可採用溫度量測件以及控制件而調整，且因此可即時地調整基板溫度的非均勻性。 Further, according to the present invention, the output of the heating lamp unit can be adjusted by using the temperature measuring member and the control member, and thus the non-uniformity of the substrate temperature can be adjusted instantaneously.
此外，依據本發明，可間歇地供應液體化學品至基板，因此可確保基板的處理製程的均勻性，以及避免因缺乏液體化學品或相似物所造成之基板的品質劣化，使得一穩定基板處理製程成為可能。 In addition, according to the present invention, liquid chemicals can be intermittently supplied to the substrate, thereby ensuring uniformity of the processing process of the substrate, and avoiding deterioration of quality of the substrate due to lack of liquid chemicals or the like, so that a stable substrate treatment is performed. The process is possible.
此外，依據本發明，連結液體化學品儲存單元與液體化學品供應單元之供應調整單元可控制液體化學品的供應，使得液體化學品的間歇供應到基板成為可能。 Further, according to the present invention, the supply adjustment unit that connects the liquid chemical storage unit and the liquid chemical supply unit can control the supply of the liquid chemical, making it possible to intermittently supply the liquid chemical to the substrate.
此外，依據本發明，液體化學品可被週期性地供應一預定時間，且進而預先地避免液體化學品的缺乏，進而可 確保製程的均勻性。 Furthermore, according to the present invention, the liquid chemical can be periodically supplied for a predetermined period of time, and thus the lack of liquid chemicals can be prevented in advance, thereby Ensure process uniformity.
此外，依據本發明，液體化學品量測單元可基於量測得到資訊而量測液體化學品的總量與成分及控制液體化學品的供應，進而可避免液體化學品內的量或一特定組成物的缺乏。 In addition, according to the present invention, the liquid chemical measuring unit can measure the total amount and composition of the liquid chemicals and control the supply of the liquid chemicals based on the measured information, thereby avoiding the amount or a specific composition in the liquid chemicals. Lack of things.
顯然地，本領域技術人員於不脫離本發明的精神或範疇的前提下，可以對本發明的上述示例性實施例各種修改。因此，本發明覆蓋所有這樣的修改，只要其落在所附申請專利範圍及其等同物的範圍之內。 Obviously, various modifications of the above-described exemplary embodiments of the invention may be made without departing from the spirit and scope of the invention. Accordingly, the present invention is intended to cover all such modifications as the scope of the appended claims
100‧‧‧基板支撐件 100‧‧‧Substrate support
110‧‧‧吸附台單元 110‧‧‧Adsorption station unit
111‧‧‧吸附台 111‧‧‧Adsorption station
113‧‧‧固定銷 113‧‧‧fixed pin
115‧‧‧吸附銷 115‧‧‧Sucking pin
130‧‧‧轉軸單元 130‧‧‧ shaft unit
150‧‧‧驅動單元 150‧‧‧ drive unit
200‧‧‧液體化學品供應件 200‧‧‧Liquid chemical supply parts
210‧‧‧液體化學品儲存單元 210‧‧‧Liquid Chemical Storage Unit
230‧‧‧液體化學品供應單元 230‧‧‧Liquid Chemical Supply Unit
250‧‧‧供應調整單元 250‧‧‧Supply adjustment unit
251‧‧‧液體化學品導管 251‧‧‧Liquid chemical conduit
253‧‧‧流速調節閥 253‧‧‧Flow rate regulating valve
270‧‧‧液體化學品量測件 270‧‧‧Liquid chemical measuring parts
300‧‧‧基板加熱件 300‧‧‧Substrate heating parts
310‧‧‧燈具安裝單元 310‧‧‧Lighting installation unit
330‧‧‧加熱燈具單元 330‧‧‧Heating lamp unit
331‧‧‧加熱燈具 331‧‧‧heating lamps
400‧‧‧溫度量測件 400‧‧‧temperature measuring parts
410‧‧‧溫度量測單元 410‧‧‧temperature measuring unit
500‧‧‧控制件 500‧‧‧Controls
S‧‧‧基板 S‧‧‧Substrate
Claims (13)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140112153A KR102064804B1 (en) | 2014-08-27 | 2014-08-27 | Apparatus and method for treating substrate |
| KR1020140112152A KR102069078B1 (en) | 2014-08-27 | 2014-08-27 | Substrate precessing apparatus |
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| TW201624585A TW201624585A (en) | 2016-07-01 |
| TWI598980B true TWI598980B (en) | 2017-09-11 |
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| TW104127838A TWI593009B (en) | 2014-08-27 | 2015-08-26 | Substrate processing apparatus and method |
| TW104127840A TWI598980B (en) | 2014-08-27 | 2015-08-26 | Substrate processing apparatus and method |
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| TW104127838A TWI593009B (en) | 2014-08-27 | 2015-08-26 | Substrate processing apparatus and method |
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| WO (2) | WO2016032241A1 (en) |
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| KR102624577B1 (en) | 2020-10-28 | 2024-01-15 | 세메스 주식회사 | substrate treating apparatus and substrate treating method |
| KR102584513B1 (en) | 2020-12-31 | 2023-10-06 | 세메스 주식회사 | Substrate type senseor for measuring of horizontal of a substrate support member provided on the atmosphere in which temperature changes are accompanied by and method for measuring horizontal of substrate support member using thereof |
| KR102584512B1 (en) | 2020-12-31 | 2023-10-05 | 세메스 주식회사 | Buffer unit and method for storaging substrate type senseor for measuring of horizontal of a substrate support member provided on the atmosphere in which temperature changes are accompanied by |
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| US6025012A (en) * | 1995-09-20 | 2000-02-15 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus for determining film thickness control conditions and discharging liquid to a rotating substrate |
| KR100265286B1 (en) * | 1998-04-20 | 2000-10-02 | 윤종용 | Apparatus of supplying chemical for manufacturing semiconductor device and its operation method |
| KR100436297B1 (en) * | 2000-03-14 | 2004-06-18 | 주성엔지니어링(주) | Plasma spray apparatus for use in semiconductor device fabrication and method of fabricating semiconductor devices using the same |
| US6902622B2 (en) * | 2001-04-12 | 2005-06-07 | Mattson Technology, Inc. | Systems and methods for epitaxially depositing films on a semiconductor substrate |
| JP3982402B2 (en) * | 2002-02-28 | 2007-09-26 | 東京エレクトロン株式会社 | Processing apparatus and processing method |
| KR100877102B1 (en) * | 2007-05-28 | 2009-01-09 | 주식회사 하이닉스반도체 | Apparatus for thermal process and thermal processing method using the same |
| CN102598217B (en) * | 2009-10-28 | 2015-03-25 | 丽佳达普株式会社 | Metal organic chemical vapor deposition device and temperature control method therefor |
| KR20130142033A (en) * | 2012-06-18 | 2013-12-27 | 주식회사 제우스 | Substrate processing apparatus |
| JP6242057B2 (en) * | 2013-02-15 | 2017-12-06 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing equipment |
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- 2015-08-26 TW TW104127838A patent/TWI593009B/en not_active IP Right Cessation
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| WO2016032242A1 (en) | 2016-03-03 |
| WO2016032241A1 (en) | 2016-03-03 |
| TW201624585A (en) | 2016-07-01 |
| TW201633395A (en) | 2016-09-16 |
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