WO2016028012A1 - Dispositif d'apport de précurseur pour la formation d'un film mince et dispositif de formation de film mince le comprenant - Google Patents

Dispositif d'apport de précurseur pour la formation d'un film mince et dispositif de formation de film mince le comprenant Download PDF

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WO2016028012A1
WO2016028012A1 PCT/KR2015/008115 KR2015008115W WO2016028012A1 WO 2016028012 A1 WO2016028012 A1 WO 2016028012A1 KR 2015008115 W KR2015008115 W KR 2015008115W WO 2016028012 A1 WO2016028012 A1 WO 2016028012A1
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Prior art keywords
droplet
precursor
droplets
vaporization space
raw material
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PCT/KR2015/008115
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English (en)
Korean (ko)
Inventor
류도형
박성환
김병종
김보민
진은주
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(주)솔라세라믹
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Publication of WO2016028012A1 publication Critical patent/WO2016028012A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles

Definitions

  • the present invention relates to a vapor deposition technique, and more particularly, to a precursor supply apparatus for forming a thin film, and a thin film forming apparatus including the same.
  • a substrate having a transparent conductive film formed on a transparent substrate such as a glass substrate as an insulator is widely used.
  • a transparent conductive film a conductive metal oxide such as indium tin oxide (ITO), tin oxide, or fluorine-doped tin oxide (FTO) is typical.
  • ITO indium tin oxide
  • FTO fluorine-doped tin oxide
  • transparent conductive films containing ITO as a main component have been widely applied to display devices for personal computers, televisions, and digital signage.
  • a transparent conductive film for resistance heating by direct electric energy instead of the conventional fossil fuel.
  • a transparent conductive film in place of the fossil fuel used in conventional heating / dehumidification / heat treatment (processing).
  • a transparent conductive film is used as a heating source for a plastic house, a livestock raising facility, or a food processing facility, or is used as a heat generating resistor for preventing condensation or freezing on window glass of a building, a car, or an aircraft.
  • the FTO conductive film is attracting attention as a potent candidate material because it has not only high transparency but little resistance change up to 500 ° C., and also has excellent chemical resistance and abrasion resistance and is suitable for harsh external environments. have.
  • the formation of the FTO conductive film is generally made by a vapor deposition method such as chemical vapor deposition (CVD), atomic layer deposition (ALD) or organic vapor deposition (OVPD or condensation coating).
  • the substrate such as window glass has various sizes or large areas, and has various shapes such as a plate or a curved surface according to its application, it is difficult to implement the designed characteristics by the above-described vapor deposition method. .
  • a large amount of raw materials are required to deposit a conductive film on a large-area or various shapes of substrates, and as a result, manufacturing costs increase due to unreacted and wasted raw materials.
  • the technical problem to be solved by the present invention is to minimize the waste of raw materials for forming a thin film, and to form a thin film having uniform characteristics economically and easily on a target object having various areas and shapes, such as a glass window. It is to provide a precursor supply device for providing a precursor.
  • Another technical problem to be solved by the present invention is to provide a thin film forming apparatus having a precursor supply device having the above-described advantages.
  • Precursor supply apparatus for solving the above technical problem, is coupled to the reaction chamber for forming a thin film on one surface of the workpiece, vapor phase precursor for forming the thin film with the reaction chamber
  • a precursor supply device for supplying a comprising: a raw material storage unit for storing a liquid raw material; A droplet supply unit coupled to the raw material storage unit and configured to discharge the liquid raw material in the form of droplets; And a chamber wall defining a vaporization space; A droplet inlet formed on the first side of the chamber wall, through which droplets pass from the droplet supply to the vaporization space; A heating unit coupled to the vaporization space to vaporize the droplets in the vaporization space to form a gaseous precursor in the vaporization space; A carrier gas inlet formed on the second side of the chamber wall for introducing carrier gas into the vaporization space; And a precursor vaporization portion formed on the third side of the chamber wall and including a precursor outlet for outputting the gaseous precursor mixed with the carrier
  • the droplet supply unit may include a droplet flow rate control unit for controlling at least one of the moving speed and the size of the droplet.
  • the flow control unit may include any one or a combination of two or more of the flow control valve, the directional control valve, the piston, and the clamp.
  • Temperature control means for preventing condensation from being generated by condensation of droplets on the outer wall or inside of the droplet supply unit may be provided.
  • a plurality of droplet supply units may be provided, and different types of raw materials may be supplied to each droplet supply unit.
  • the droplet inlet is a hole, through which the droplet supply portion may extend and protrude into the vaporization space.
  • the droplet inlet may be a droplet path or a nozzle coupled to the chamber wall to protrude into the vaporization space, and the droplet supply unit may be coupled to the droplet inlet.
  • the first side of the chamber wall to which the droplet supply unit is coupled may be an upper side of the chamber wall, and the droplet supply unit may extend vertically.
  • the droplet supply portion or the droplet inlet has a tube shape and may have a constant, increased or decreased inner diameter in the extending direction.
  • the droplet supply unit or the droplet inlet may reduce or interrupt the flow rate of the liquid raw material supplied from the raw material storage unit by using the surface tension of the liquid raw materials to the end of the droplet supply unit or the droplet inlet.
  • the droplets may be generated by a method in which the particles form a droplet.
  • the droplet supply unit or the droplet inlet is a method for forcibly discharging the liquid raw material in the form of droplets through the piezoelectric element coupled to the droplet supply unit or the droplet inlet or an electrode capable of forming an electric field when the liquid raw material is ionic
  • the droplets can be generated as The droplet supply unit or the droplet inlet may adjust the size of the droplets by adjusting the size of the inner diameter.
  • the heating portion is in the form of a plate, a vessel, a tube having a through hole through which droplets can pass, a coil, a rod, a fullerine and a net, or a combination thereof.
  • the heating unit may be in contact with the vaporization space or coupled to the outside of the chamber wall.
  • the droplet inlet and the heating unit may be disposed to face each other.
  • the heating unit may include any one or a combination of two or more of a far infrared heating device, an infrared heating device, a microwave heating device, an induction heating device, a dielectric heating device and a resistance heating device.
  • the opening of the precursor outlet may have a shape having a cross section gradually extended toward the reaction chamber.
  • a thin film forming apparatus comprising: a reaction chamber defining a space for forming a thin film on one surface of a workpiece; Support means for placing the object to be processed in the reaction chamber; And a precursor supply device coupled to the reaction chamber for spraying a gaseous precursor on one surface of the object, the precursor supply device comprising: a raw material storage unit for storing a liquid raw material; A droplet supply unit coupled to the raw material storage unit and configured to discharge the liquid raw material in the form of droplets; And a chamber wall defining a vaporization space; A droplet inlet formed on the first side of the chamber wall, through which droplets pass from the droplet supply to the vaporization space; A heating unit coupled to the vaporization space to vaporize the droplets in the vaporization space to form a gaseous precursor in the vaporization space; A carrier gas inlet formed on the second side of the chamber wall for introducing carrier gas into the vaporization space; And a precursor supply chamber formed on
  • the support means may comprise any one or a combination of a non-contact structure by an electromagnet or a permanent magnet, and a mechanical electric motor using a contact structure to rotate the workpiece.
  • the thin film forming apparatus may form the thin film by spray pyrolysis.
  • a vapor phase precursor supply device capable of easily forming a thin film of uniform properties on a workpiece having a shape can be provided.
  • a thin film forming apparatus that can easily form a thin film of uniform characteristics using the precursor supply apparatus described above.
  • FIG. 1A shows a precursor vaporization portion in accordance with one embodiment of the present invention.
  • FIG. 1B shows a precursor supply apparatus according to an embodiment of the present invention.
  • 2A is another embodiment of a precursor outlet in accordance with one embodiment of the present invention.
  • 2B is another embodiment of a precursor outlet in accordance with one embodiment of the present invention.
  • FIG 3 illustrates a thin film forming apparatus according to an embodiment of the present invention.
  • FIG. 4A is a perspective view of a thin film forming apparatus according to an embodiment of the present invention.
  • FIG. 4B is a side view of a thin film forming apparatus according to an embodiment of the present invention.
  • first, second, etc. are used herein to describe various members, parts, regions, layers, and / or parts, these members, parts, regions, layers, and / or parts are defined by these terms. It is obvious that not. These terms are only used to distinguish one member, part, region, layer or portion from another region, layer or portion. Thus, the first member, part, region, layer or portion, which will be discussed below, may refer to the second member, component, region, layer or portion without departing from the teachings of the present invention.
  • the thin film forming apparatus may be based on spray pyrolysis deposition (SPD).
  • SPD spray pyrolysis deposition
  • the spray pyrolysis method involves spraying droplets containing a raw compound produced using a spraying means such as an atomizer, such that evaporation, high temperature reaction, pyrolysis of the solvent contained in the droplets while the droplets are transferred through the droplet delivery flow path.
  • Gas phase collectively referred to herein, involving at least one or two or more steps of the reaction between the carrier gas and the precursor (eg, oxidation or reduction), the formation of clusters, and the formation of gas molecules And a thin film is formed on a workpiece to be heated to a film formation temperature in advance by a vapor phase precursor discharged through the droplet transfer flow path.
  • crystalline (eg, polycrystalline) thin films, nanorods, nanowires, or amorphous film growth may be achieved.
  • the following embodiments are based on the SPD method (or SPD deposition) to economically and easily form a thin film having uniform properties on a workpiece having various areas and shapes, such as a glass window. It may be a precursor supply device, and a thin film forming apparatus using the same.
  • 1A shows a precursor vaporization unit 100 in accordance with an embodiment of the present invention.
  • 1B illustrates a precursor supply apparatus 1000 according to an embodiment of the present invention.
  • the precursor vaporization unit (or precursor chamber wall 100) includes a chamber wall 120 defining a vaporization space; A droplet inlet (DI) for passing the droplets DR from the droplet supply unit 110 to the vaporization space; A heating unit HP for vaporizing the droplets DR in the vaporization space to form a vapor phase precursor VD; And a carrier gas inlet (GI) for introducing a carrier gas into the vaporization space. And a precursor outlet 400 for outputting the gaseous precursor mixed with the carrier gas to a reaction chamber in which a thin film is formed.
  • DI droplet inlet
  • GI carrier gas inlet
  • the chamber wall 120 of the vaporization unit 100 has a suitable structure for thermal insulation, sealing, isolation and / or movement of gas to the outside.
  • chamber wall 120 may be a hood.
  • the hood maintains an atmospheric pressure condition in the vaporization space while preventing heat from leaking from the inside of the vaporization space to the outside during generation of the vapor phase precursor and from leaking and wasting the vapor phase precursor to the outside.
  • the chamber wall 120 may be made of a metallic material made of or coated with a metallic material made of or coated with aluminum, stainless steel, copper, or a refractory metal.
  • the structure of the chamber wall 120 may have a structure suitable for producing a vapor phase precursor, for example, a circular structure or a square structure, and any other structure.
  • the heating portion HP may be provided with suitable heating means such as an induction heating coil, a resistance wire, or a halogen lamp around the chamber wall 120 for the droplet DR to dry and pyrolyze to form a vapor phase precursor. Can be.
  • One end of the droplet supply unit 110 is connected to the raw material storage unit (see 200 in FIG. 2), and the other end is connected to the droplet inlet DI of the chamber wall 120 to form droplets DR into the chamber wall 120. ).
  • the generation of the droplets DR uses the surface tension of the liquid raw materials to reduce or interrupt the flow rate of the liquid raw material supplied from the raw material storage unit by the flow rate control means described later, so that the end or the droplets of the tube-shaped droplet supply unit.
  • the end of the inlet may be made in a way to naturally form a liquid raw material in the form of droplets.
  • the generation of the droplets DR is a liquid raw material in the form of droplets forcibly through the electrode capable of forming an electric field in the droplet supply unit 110 or droplet inlet DI if the piezo element or liquid raw material is ionic. It can be made by a method for discharging the.
  • the droplets DR in the droplet supply unit 110 may be delivered to the droplet inlet DI under the influence of gravity.
  • the droplet supply unit 110 may be disposed on the upper side of the droplet inlet DI of the precursor vaporization unit 100 so that the droplets DR may fall vertically into the vaporization space.
  • the droplet supply unit 110 may have a tube shape in order to control the moving speed and the size of the droplet DR, and may include any one or a combination of two or more of a flow control valve, a direction control valve, a piston, and a clamp. Droplet flow control means may be combined.
  • the droplet supply unit 110 may have a plurality of tubes, and different types of raw materials may be supplied to each droplet supply unit 110 to transfer the plurality of raw materials to the precursor vaporization unit 100.
  • the outside of the droplet supply unit 110 may include a temperature control means on the wall or inside to heat the inside or maintain a constant temperature to prevent the droplets from condensing to become a contaminant such as particles.
  • the temperature control means may include, for example, an induction heating coil, a resistance wire, or a halogen lamp.
  • Droplet supply 110 may be formed of a metal conduit or quartz conduit, such as stainless steel, having suitable heat resistance to enable external heating.
  • the droplet supply unit 110 may be formed of a polymer resin material having heat resistance and chemical resistance.
  • the Teflon material is used to improve chemical resistance and corrosion resistance to the inner surface of the droplet supply unit 110 to secure the mobility in the droplet supply unit 110 and to prevent by-products from being deposited. Coating or water repellent coating for adsorption may be made.
  • the droplet inlet DI may be a hole formed in the first side of the chamber wall 120, for example, the upper side, or the hole. In this case, the droplet supply unit 110 may extend into the vaporization space through the hole to protrude.
  • the droplet inlet DI may be in the form of a pipe or nozzle coupled to the chamber wall 120 and projecting into the vaporization space.
  • the droplet supply unit 110 in the form of a tube may be coupled to the droplet inlet DI to ensure a smooth flow of the droplets or the liquid raw material.
  • the droplet inlet DI has the same inner diameter size of one end of the droplet supply part 110 side and the opening of the other end of the vaporization space side, or has an inner diameter narrower from the end of the droplet supply part 110 side toward the end of the vaporization space side. Can be lost or large.
  • the inner diameter of the droplet inlet can be in the range of 0.1 mm to 2 cm, for example.
  • the droplet inlet DI may have suitable sizing means for adjusting the size of the inner diameter of the droplet path to control the size of the droplet DR.
  • the droplet inlet DI may have a bellows structure in which a plurality of partition walls defining the droplet path are positioned to overlap each other and change in size of the inner diameter.
  • the shape of the inner diameter may be controlled by applying an external force to deform the shape.
  • this is merely illustrative and the present invention is not limited thereto.
  • the droplet inlet DI may have a tube or nozzle shape, in which case a piezo element is coupled to the droplet inlet to adjust the size of the droplets discharged from the droplet inlet by controlling the size of the electrical signal.
  • the droplet inlet DI may further include an electrode for applying an electric or magnetic field for controlling the movement of the droplets DR.
  • the electrode may include a coil electrode attached to the droplet inlet DI, a thin film electrode, or a plate electrode spaced apart from the droplet inlet DI, but this is merely an example and the present invention is not limited thereto.
  • the droplet supply unit 110 and the droplet inlet DI may have a single integrated structure.
  • the droplet inlet (DI) is a hole formed in one side, for example, the upper side of the chamber wall 120
  • the tube-shaped droplet supply unit 110 extends through the hole into the interior of the vaporization space
  • the droplet supply unit 110 may have a droplet shape, in which case a plurality of conduits may be fastened to overlap each other in order to control the characteristics of the droplet inlet DI, for example, the size or flow rate of the droplets.
  • the droplet inlet DI and the droplet supply unit 110 may be formed of a metal, quartz, or a polymer resin material having chemical and heat resistance, and these materials are exemplary, but the present invention is not limited thereto.
  • the heating unit HP may heat the droplets DR discharged from the droplet inlet DI or the droplet supply unit 110 and supplied into the vaporization space to form the vapor phase precursor VD in the vaporization space.
  • the heating unit HP may be any heat energy source capable of vaporizing the droplets DR by heating the inside of the vaporization space through radiation or convection.
  • the heating unit HP may be any one or a combination of two or more of a far infrared heater, an infrared heater, a microwave heater, an induction heater, a dielectric heater, and a resistance heater.
  • the heating unit HP may be coupled to the outside of the chamber wall 120 or may be provided inside the chamber wall 120 to contact the vaporization space.
  • the heating unit HP is formed of any one or a combination of a plate form, a container form, a tube form having a through hole through which droplets can pass, a coil form, a rod form, a fullerine and a net form. It can have In one embodiment, when the heating portion HP is in the form of a tube or a fullerene, the droplet DR may be formed into the gaseous precursor VD while passing through the heating portion HP.
  • the heating unit HP illustrated in FIG. 1A illustrates an induction heating or resistance heating apparatus using a coil in the form of a plate disposed on the bottom of the vaporization space.
  • heat generated from the heating part HP may be supplied to the droplets DR in a radiation manner, or may be supplied to the droplets DR in a convection manner by a carrier gas in the vaporization space.
  • the droplets DR may be discharged from the droplet inlet DI or the droplet supply unit 110 or may be vaporized in a non-contact state with the heating unit HP during the drop.
  • the droplets DR may be dropped and vaporized on the heating portion HP by contacting the heating portion HP, but this is merely illustrative and the present invention is not limited thereto.
  • the heating part HP may be attached on the first surface of the chamber wall 120 or may be mounted outside the chamber wall 120 as shown in FIG. 1B.
  • the vapor phase precursor VD formed in the vaporization space is mixed with the carrier gas drawn from the carrier gas inlet GI as shown by arrow CG1 and through the precursor outlet 400 in the direction indicated by arrow CG2. It may be delivered to the reaction chamber 500.
  • the carrier gas inlet GI, the droplet inlet DI, the heating unit HP, and the precursor outlet 400 may be disposed to face each other or to overlap at least some of them.
  • the gas inlet GI and the precursor outlet 400 may be disposed to face each other, and the droplet inlet DI and the heating part HP may be disposed to face each other.
  • the gaseous precursor is supplied into the vaporization space in the form of droplets DR, not in the form of mist, and by controlling the temperature, the size and / or the moving speed of the droplets DR, in the generation of the gaseous precursor Unnecessary consumption of raw materials can be prevented.
  • a thin film having uniform characteristics may be provided.
  • the precursor supply apparatus 1000 may include the precursor vaporization unit 100 described above; A raw material storage unit 200 for storing the liquid raw material in order to supply the liquid raw material to the droplet supply unit 110; A carrier gas storage unit 300 for supplying the carrier gas; A carrier gas supply unit 310 through which the carrier gas passes; And a precursor outlet 400 for delivering the gaseous precursor contained in the carrier gas to the reaction chamber 500.
  • the opening of the precursor outlet 400 may have a shape having a cross section that gradually extends toward the reaction chamber.
  • this is exemplary and the present invention is not limited thereto. This will be described in detail with reference to FIGS. 2A to 2B.
  • the carrier gas reservoir 300 may have a mass flow controller (MFC) and a suitable valve system for controlling the supply flow rate of the carrier gas.
  • MFC mass flow controller
  • the carrier gas supplied from the carrier gas storage part 300 via the carrier gas supply part 310 is mixed with the gaseous precursor in the precursor vaporization part 100 and delivered to the reaction chamber 500.
  • the carrier gas is also heated in the vaporization space, thereby preventing the gaseous precursor VD from being adsorbed to the inner wall of the gaseous precursor VD, for example, the precursor outlet 400, to prevent dust or contamination.
  • the carrier gas may be a reactive gas such as oxygen, ozone, hydrogen or ammonia or an inert gas such as helium or argon or a mixture thereof, but the present invention is not limited thereto.
  • the carrier gas may be air.
  • FIGS. 2A and 2B are perspective views of precursor outlets 400a and 400b in accordance with various embodiments of the present invention.
  • an opening area of one end connected to the vaporization space and an opening area of the other end coupled to the reaction chamber may be the same.
  • the precursor outlet 400b may have an array of a plurality of vapor phase precursor flow paths and may be placed in a separate housing for isolation from the outside.
  • Korean Patent Application No. 10-2014-0056815 the disclosure of which is incorporated herein by reference in its entirety.
  • the precursor outlets 400, 400a and 400b described above may each be formed of a metal conduit or quartz conduit such as stainless steel having suitable heat resistance to enable external heating.
  • the inner surface of the precursor outlet may be a coating of Teflon material or a water repellent coating for preventing adsorption to improve chemical resistance and corrosion resistance.
  • a heating means may be coupled to the precursor outlet, which may be performed through resistance heating or radiation heating, such as a halogen lamp, which surrounds the resistance wire outside the precursor outlet.
  • the precursor outlet 400b is an array of a plurality of gaseous precursor flow passages
  • the gaseous precursor flow passages are suitable temperatures for individually controlling the temperature of the droplets therein.
  • a resistance heating method may be advantageous in which resistance lines are wrapped around the outside of each of the flow paths and the amount of power supplied may be individually adjusted for each of the flow paths. However, this individual adjustment does not preclude keeping the temperatures of the respective flow paths the same.
  • FIGS. 4A and 4B are perspective and side views of the thin film forming apparatus 2000 ′ according to another embodiment of the present invention, respectively.
  • the thin film forming apparatus 2000 forms a thin film on one surface of the target object SP by the SPD method.
  • the object to be processed SP is a substrate such as glass, ceramic, semiconductor, or metal, which is exemplary and the present invention is not limited thereto.
  • the surface of the object SP may be smooth or include an uneven pattern such as embossing.
  • the object to be processed SP may be one surface of a low-e glass or a heating glass for forming a planar heating element, and may be a substrate that typically requires a large area thin film.
  • the thin film forming apparatus 2000 includes a reaction chamber 500 for SPD deposition; A precursor supply device 1000 for generating a vapor phase precursor VD for thin film deposition; And a gas outlet 530.
  • One side of the reaction chamber 500 is combined with the precursor outlet 400 of the precursor supply device 1000 to receive the vapor phase precursor VD.
  • the gaseous precursor VD mixed with the carrier gas may be drawn in the direction of arrow CG2 to form a thin film on the object SP and be discharged in the direction of arrow CG3.
  • the carrier gas outlet 530 may be disposed to face the precursor outlet 400. In one embodiment, the carrier gas discharge unit 530 may be coupled to the collector.
  • the collector suppresses undesired flow, such as vortices and backflow, which are thermal and hydrodynamic non-equilibrium factors in the reaction space within the reaction chamber 500, and thus controls laminar flow, thereby dead spots. ) To achieve a uniform and thin film formation on the large-area workpiece SP without risk of particle formation.
  • the reaction space of the reaction chamber 500 is defined by the chamber wall, which has a suitable structure for insulation, sealing and / or isolation from the outside.
  • the chamber wall may be a hood. The hood maintains an atmospheric pressure condition in the reaction space while preventing heat from leaking from the inside of the reaction space to the outside during film formation and preventing the vapor phase precursor from leaking to the outside.
  • the chamber wall or the hood may be made of aluminum, stainless steel, copper or refractory metal and a material of or coated with a metal material.
  • a material of or coated with a metal material For example, an anodized or ceramic coated material may be used on the surface of the metal material.
  • the chamber wall or the hood may be fabricated in whole or in part from an electrically insulating material such as quartz, ceramic.
  • the reaction chamber 500 may be provided with a suitable heater such as an induction heating coil, a resistance wire, or a halogen lamp, to provide a reaction space in which the vapor phase precursor VD is dried and pyrolyzed.
  • the support chamber PL may be provided in the reaction chamber 500 to mount the object SP, and the support means PL is preferably a resistance heater for temperature control of the object SP. Or heating means by hot fluid and / or cooling means of air cooling, water cooling or semiconductor cooling.
  • the support means PL can be made of aluminum, graphite, alumina or aluminum nitride as a non-limiting example to have a good thermal conductivity and to prevent deformation such as bending of the object SP.
  • the support means PL may comprise any one or a combination of lift pins, electrostatic chucks and vacuum chucks.
  • the support means PL may include a device for adjusting the height of the object SP.
  • the height adjustment device may comprise a screw form.
  • the support means PL may include a rotating body 510 which rotates the object SP for uniform film formation while the thin film forming process for the object SP is performed.
  • the rotating body 510 may be any one or a combination of a non-contact structure capable of rotating by a magnetic field transmitted from an electromagnet or a permanent magnet installed outside the reaction chamber, or a mechanical electric motor using a contact structure.
  • the rotating body 510 may be attached with a separate housing inside or outside the supporting means PL.
  • the reaction chamber 500 may have a structure suitable for coating the object SP, for example, a circular cylinder structure, a square cylinder structure, and any other structure.
  • the reaction chamber 500 'shown in FIGS. 4A and 4B is a reaction chamber having a hexagonal cylinder structure.
  • the reaction chamber 500 ′ may include a window 520 for determining a deposition state of an object to be processed.
  • the FTO transparent conductive film for manufacturing a heat generating window may be formed on the object to be processed using the thin film forming apparatus 2000.
  • the solution of the FTO precursor is a tin precursor, which is SnCl 4 5H 2 O, (C 4 H 9 ) 2 Sn (CH 3 COO) 2 , (CH 3 ) 2 SnCl 2 , or (C 4 H 9 )
  • tin precursor which is SnCl 4 5H 2 O, (C 4 H 9 ) 2 Sn (CH 3 COO) 2 , (CH 3 ) 2 SnCl 2 , or (C 4 H 9 )
  • Compounds such as 3 SnH may be used and other precursors may be used.
  • the fluorine precursor compounds such as NH 4 F, CF 3 Br, CF 2 Cl 2 , CH 3 CClF 2 , CF 3 COOH, or CH 3 CHF 2 can be used.
  • These precursors may be mixed with distilled water or alcohol to have a predetermined weight ratio F / Sn to prepare a mixed solution, and then mounted in the raw material storage unit 200 to generate droplets DR.
  • the FTO thin film may be formed on the glass substrate by spraying the vapor phase precursor through the precursor supply apparatus 1000 after maintaining the temperature of the glass substrate as the object SP.
  • a gaseous precursor supply device capable of easily forming a thin film of uniform characteristics on a workpiece having various areas and shapes while minimizing waste of the liquid raw material for forming a thin film may be provided.
  • a thin film forming apparatus capable of easily forming a thin film of uniform characteristics may be provided.

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  • Dispersion Chemistry (AREA)

Abstract

La présente invention porte sur un dispositif d'apport de précurseur pour la formation d'un film mince, sur un dispositif de formation de film mince le comprenant et sur un procédé de formation de film mince l'utilisant. Le dispositif d'apport de précurseur, selon un mode de réalisation de la présente invention, comprend : une partie de stockage de matière première pour stocker une matière première liquide ; une partie d'apport de gouttelettes accouplée à la partie de stockage de matière première pour faire sortir de la matière première liquide sous la forme de gouttelettes ; et une partie de vaporisation de précurseur comprenant une paroi de chambre, une entrée de gouttelettes, une partie de chauffage, une entrée de gaz vecteur et une sortie de précurseur, la paroi de chambre délimitant un espace de vaporisation, l'entrée de gouttelettes étant formée sur une première partie latérale de la paroi de chambre pour amener des gouttelettes à passer de la partie d'apport de gouttelettes à l'espace de vaporisation, la partie de chauffage étant accouplée à l'espace de vaporisation pour vaporiser les gouttelettes dans l'espace de vaporisation, ce qui permet de former une vapeur de précurseur dans l'espace de vaporisation, l'entrée de gaz vecteur étant formée sur une deuxième partie latérale de la paroi de chambre pour introduire un gaz vecteur à l'intérieur de l'espace de vaporisation et la sortie de précurseur étant formée sur une troisième partie latérale de la paroi de chambre pour fournir en sortie, à une chambre de réaction, le précurseur en phase vapeur mélangé avec le gaz vecteur.
PCT/KR2015/008115 2014-08-21 2015-08-04 Dispositif d'apport de précurseur pour la formation d'un film mince et dispositif de formation de film mince le comprenant WO2016028012A1 (fr)

Applications Claiming Priority (2)

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KR10-2014-0109293 2014-08-21
KR1020140109293A KR101694751B1 (ko) 2014-08-21 2014-08-21 박막 형성을 위한 전구체 공급 장치 및 이를 포함하는 박막 형성 장치

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WO2016028012A1 true WO2016028012A1 (fr) 2016-02-25

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KR102111835B1 (ko) * 2017-11-20 2020-05-15 한국과학기술원 서브 챔버를 구비한 iCVD 시스템 및 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2820957B2 (ja) * 1989-05-30 1998-11-05 富士通株式会社 半導体製造装置及び半導体装置の製造方法
JP2005028280A (ja) * 2003-07-11 2005-02-03 Seiko Epson Corp 液滴吐出装置、電気光学装置、電気光学装置の製造方法、並びに電子機器
JP2011152486A (ja) * 2010-01-25 2011-08-11 Seiko Epson Corp 液滴吐出装置の洗浄方法および液滴吐出装置
KR20120039665A (ko) * 2009-07-27 2012-04-25 유니버시티 오브 더럼 금속 알콕사이드를 사용한 그래핀 제조방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005211767A (ja) * 2004-01-28 2005-08-11 Seiko Epson Corp スリットコート式塗布装置及びスリットコート式塗布方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2820957B2 (ja) * 1989-05-30 1998-11-05 富士通株式会社 半導体製造装置及び半導体装置の製造方法
JP2005028280A (ja) * 2003-07-11 2005-02-03 Seiko Epson Corp 液滴吐出装置、電気光学装置、電気光学装置の製造方法、並びに電子機器
KR20120039665A (ko) * 2009-07-27 2012-04-25 유니버시티 오브 더럼 금속 알콕사이드를 사용한 그래핀 제조방법
JP2011152486A (ja) * 2010-01-25 2011-08-11 Seiko Epson Corp 液滴吐出装置の洗浄方法および液滴吐出装置

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KR101694751B1 (ko) 2017-01-10

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