WO2016008116A1 - 交叉波导 - Google Patents

交叉波导 Download PDF

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Publication number
WO2016008116A1
WO2016008116A1 PCT/CN2014/082325 CN2014082325W WO2016008116A1 WO 2016008116 A1 WO2016008116 A1 WO 2016008116A1 CN 2014082325 W CN2014082325 W CN 2014082325W WO 2016008116 A1 WO2016008116 A1 WO 2016008116A1
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WO
WIPO (PCT)
Prior art keywords
waveguide
core layer
width
cross
distance
Prior art date
Application number
PCT/CN2014/082325
Other languages
English (en)
French (fr)
Inventor
刘万元
涂鑫
付红岩
Original Assignee
华为技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to CN201480080599.2A priority Critical patent/CN106537199B/zh
Priority to PCT/CN2014/082325 priority patent/WO2016008116A1/zh
Priority to KR1020177003887A priority patent/KR101900630B1/ko
Publication of WO2016008116A1 publication Critical patent/WO2016008116A1/zh
Priority to US15/406,182 priority patent/US9766399B2/en

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/125—Bends, branchings or intersections
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/02—Optical fibres with cladding with or without a coating
    • G02B6/028—Optical fibres with cladding with or without a coating with core or cladding having graded refractive index
    • G02B6/0288—Multimode fibre, e.g. graded index core for compensating modal dispersion
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12061—Silicon

Definitions

  • the present invention relates to optical communication technologies, and more particularly to a cross waveguide. Background technique
  • the high refractive index contrast of silicon light makes it suitable for large-scale and high-density integration. At the same time, it can also utilize the mature complementary metal oxide semiconductor (CMOS) process of electric chips, which makes silicon Light has its own advantages. However, the optical path does not have the flexibility of the circuit. In large-scale switching matrices, the intersection of the waveguides is unavoidable. In a silicon light platform, the cross-waveguide is an extremely core device. If the loss value of a cross-waveguide is 0.3 dB, if the number of cross-waveguides is 100 in one switch matrix, the loss caused by only the cross-waveguide is 30 dB, which is a very serious loss. Therefore, it is necessary to reduce the loss of the cross-waveguide.
  • CMOS complementary metal oxide semiconductor
  • a cross-waveguide based on mode broadening is used to reduce the cross-wave loss, and the light wave mode is realized by using a change in the waveguide structure, that is, the width of the core layer is widened toward the intersection region and the shallow etched portion is added. Widening, thereby achieving a change in the distribution of the light wave field to reduce the divergence of light in the intersection region.
  • a cross-waveguide based on multimode interference is also used, that is, a multimode waveguide in the intersection region, and at the input and output ends.
  • Single-mode waveguide so as to reduce the loss of cross-waveguide, that is, the input and output ends of the cross-waveguide are single-mode waveguides, and the multi-mode waveguides in the intersection area, using the image points formed by multimode interference to reduce the light waves in the intersection area Loss.
  • additional losses are introduced due to variations in field distribution and variations in waveguide mode.
  • Embodiments of the present invention provide a cross-waveguide to overcome the additional loss caused by the variation of the field distribution and the change of the waveguide mode in the prior art in the transmission of light waves in the cross-waveguide.
  • a first aspect of the present invention provides a cross waveguide, including: a first waveguide and a second waveguide; wherein the first waveguide and the second waveguide are perpendicular to each other and intersect with each other, the first waveguide and the second waveguide
  • the area formed by the intersection of the waveguides is an intersection area
  • Each of the first waveguide and the second waveguide includes a shallow etched portion and a core layer, and the shallow etched portion is symmetrically distributed on both sides of the core layer in a longitudinal direction with respect to an axis of the core layer;
  • One end of the first waveguide is a first input waveguide, and the other end is a first output waveguide, and one end of the second waveguide is a second input waveguide, and the other end is a second output waveguide;
  • the width of the core layer in the first input waveguide is set to be equal, and the distance between the outer sides of the shallow etched portions in the first input waveguide is equal;
  • the width of the core layer in the second input waveguide is equal, and the distance between the outer sides of the shallow etched portions in the second input waveguide is equal;
  • a width of one end of the core layer in the first output waveguide near the intersection region is smaller than a width of a core layer in the first input waveguide, and a width of the other end core layer of the first output waveguide is different from the first
  • the width of the core layer in the input waveguide is the same, the distance between the outer sides of the shallow etched portions in the first output waveguide is equal, and the width of the core layer in the second output waveguide near the end of the intersection region is smaller than the first a width of the core layer in the two input waveguide, a width of the other end core layer of the second output waveguide being the same as a width of the core layer in the second input waveguide, and an outer side of the shallow etched portion in the second output waveguide Equal distance;
  • a distance between an outer side of the shallow etched portion of the first output waveguide adjacent to one end of the intersection region is smaller than a distance between outer sides of the shallow etched portion of the first input waveguide, the first output waveguide
  • the distance between the outer side of the shallow etched portion of the other end is the same as the distance between the outer side of the shallow etched portion of the first input waveguide, and the shallow etched portion of the second output waveguide near one end of the intersecting region a distance between the outer sides is smaller than a distance between outer sides of the shallow etched portions in the second input waveguide, and a distance between outer sides of the shallow etched portions of the other end of the second output waveguide is in the second input waveguide
  • the distance between the outer sides of the shallow etched portions is the same.
  • the thickness of the core layer is greater than the thickness of the shallow etched portion.
  • the first waveguide and the second waveguide are respectively parallel to the axis.
  • the width of the first output waveguide is gradually widened, and the width of the second output waveguide is gradually widened.
  • a width of the shallow etched portion of the first output waveguide is gradually widened, and a width of the shallow etched portion of the second output waveguide is gradually widened.
  • the first waveguide and the second waveguide are both multimode waveguide.
  • the first waveguide and the second waveguide are Ridge waveguide.
  • the material of the shallow etch portion and the core layer are the same.
  • the center of the intersection area and the first waveguide The distance between the ends is equal;
  • the distance between the center of the intersection region and both ends of the second waveguide is equal.
  • a second aspect of the present invention provides a switch matrix comprising at least one cross-waveguide as described in the first aspect, any one of the first to eighth implementations of the first aspect.
  • the cross-waveguide provided by the embodiment of the present invention includes: a first waveguide and a second waveguide, wherein the first waveguide and the second waveguide are perpendicular to each other and intersect with each other, and a region formed by a portion where the first waveguide and the second waveguide intersect is a cross a region, and the first waveguide and the second waveguide each comprise a shallow etched portion and a core layer, and the shallow etched portion is symmetrically distributed on both sides of the length direction of the core layer with respect to the axis of the core layer, wherein the core layer is appropriately adjusted or The width of the shallow etched portion can effectively reduce the loss of energy when the light wave is transmitted in the cross-waveguide.
  • FIG. 1 is a schematic structural view of a cross waveguide according to Embodiment 1 of the present invention.
  • FIG. 2 is a simulation result of electric field distribution in a cross-waveguide according to Embodiment 1 of the present invention
  • FIG. 3 is a result of numerical stability research using BPM
  • Figure 4 shows the results of numerical stability studies using FDTD
  • FIG. 5 is a schematic structural diagram of a cross-waveguide according to Embodiment 2 of the present invention. detailed description
  • An embodiment of the present invention provides a cross waveguide, including: a first waveguide and a second waveguide; wherein, the first waveguide and the second waveguide are perpendicular to each other and intersect with each other, and a region formed by a portion where the first waveguide and the second waveguide intersect is Intersection area
  • the first waveguide and the second waveguide each include a shallow etched portion and a core layer, and the shallow etched portion is symmetrically distributed on both sides of the core layer in the longitudinal direction with respect to the axis of the core layer;
  • One end of the first waveguide is a first input waveguide, and the other end is a first output waveguide, one end of the second waveguide is a second input waveguide, and the other end is a second output waveguide;
  • the width of the core layer in the first input waveguide is set to be equal, and the distance between the outer sides of the shallow etched portions in the first input waveguide is equal;
  • the width of the core layer in the second input waveguide is set to be equal, and the distance between the outer sides of the shallow etched portions in the second input waveguide is equal;
  • a width of one end of the core layer in the first output waveguide near the intersection region is smaller than a width of the core layer in the first input waveguide, and a width of the other end core layer of the first output waveguide is the same as a width of the core layer in the first input waveguide a distance between the outer sides of the shallow etched portions of the first output waveguide is equal, and a width of one end of the core layer in the second output waveguide near the intersection region is smaller than a width of the core layer in the second input waveguide Degree, the width of the other end core layer of the second output waveguide is the same as the width of the core layer in the second input waveguide, and the distance between the outer sides of the shallow etching portions in the second output waveguide is equal;
  • the distance between the outer side of the shallow etched portion of the first output waveguide near the end of the intersection region is smaller than the distance between the outer side of the shallow etched portion of the first input waveguide, and the other end of the first output waveguide is shallowly etched outside the portion
  • the distance between the distances is the same as the distance between the outer sides of the shallow etched portions in the first input waveguide, and the distance between the outer sides of the shallow etched portions of the second output waveguide near one end of the intersecting region is smaller than that in the second input waveguide
  • the distance between the outer sides of the shallow etched portions is the same as the distance between the outer sides of the shallow etched portions of the other end of the second output waveguide.
  • the cross-waveguide provided by the embodiment of the present invention includes: a first waveguide and a second waveguide, wherein the first waveguide and the second waveguide are perpendicular to each other and intersect with each other, and a region formed by a portion where the first waveguide and the second waveguide intersect is a cross a region, and the first waveguide and the second waveguide each comprise a shallow etched portion and a core layer, and the shallow etched portion is symmetrically distributed on both sides of the length direction of the core layer with respect to the axis of the core layer, wherein the core layer is appropriately adjusted or The width of the shallow etched portion can effectively reduce the loss of energy when the light wave is transmitted in the cross-waveguide.
  • FIG. 1 is a schematic structural diagram of a cross-waveguide according to Embodiment 1 of the present invention.
  • the cross-waveguide provided by the embodiment of the present invention is applied to change the width of a core layer in an output waveguide.
  • the cross-waveguide provided in this embodiment is shown in FIG.
  • the method includes: a first waveguide and a second waveguide,
  • first waveguide and the second waveguide are perpendicular to each other and intersect with each other, and a region formed by a portion where the first waveguide and the second waveguide intersect is an intersection region 101, and each of the first waveguide and the second waveguide includes a shallow etching portion 103 and a core
  • the layer 102, and the shallow etched portions are symmetrically distributed on both sides in the longitudinal direction of the core layer with respect to the axis of the core layer.
  • the shallow etched portion is the same as the material of the core layer, and both are silicon.
  • the original waveguide is a silicon plate.
  • the region of the first waveguide and the region of the second waveguide are determined in the waveguide.
  • the waveguide of the portion is uniformly etched, and the thickness after etching is smaller than the thickness of the first waveguide and the second waveguide, etching
  • the region of the first waveguide, the region of the second waveguide, and other portions of the silicon plate other than the shallow etched portion are removed, and finally, the treated silicon plate is treated with silicon dioxide. Covering, forming a cover layer, that is, forming a cross-waveguide as described in this embodiment. Further, the first waveguide and the second waveguide are respectively parallel to the axis.
  • One end of the first waveguide is the first input waveguide 104, and the other end of the first waveguide is the first output waveguide 105, that is, the first waveguide is composed of the first input waveguide 104, the intersection region 101, and the first output waveguide 105.
  • the core layers in the first input waveguide 104 are disposed at equal widths, and the width of the core layer in the first output waveguide 105 near the end of the intersection region 101 is smaller than the width of the core layer in the first input waveguide 104.
  • the width of the other end of the core layer in the first output waveguide 105 that is, the width of the core layer facing away from the intersection region 101-end is the same as the width of the core layer in the first input waveguide 104, and is symmetrically distributed in the core layer of the first input waveguide 104.
  • the distance between the outer sides of the shallow etched portions is equal, and the distance between the outer sides of the shallow etched portions symmetrically distributed around the core layer of the first output waveguide 105 is also equal, that is, as shown in FIG.
  • the shallow etched portions are evenly distributed on both sides of the direction, and the distance between the outermost sides of the shallow etched portions on both sides is equal.
  • the second waveguide vertically distributed with the first waveguide has the same structure as the first waveguide, that is, one end of the second waveguide is a second input waveguide, and the other end of the second waveguide is a second output waveguide, and the second waveguide is
  • the structure of the core layer and the shallow etched portion is exactly the same as that of the core layer and the shallow etched portion in the first input waveguide, and the width is also the same, and will not be described again.
  • the first waveguide is a waveguide placed laterally in FIG. 1
  • the second waveguide is a vertically placed waveguide in FIG. 1
  • the first waveguide and the second waveguide are vertically intersected by
  • the first waveguide and the second waveguide are vertically disposed to form an intersection region 101, and the center of the intersection region 101 is equal to the distance between the two ends of the first waveguide, and the center of the intersection region 101 is equal to the distance between the two ends of the second waveguide, and
  • the first waveguide is equal in length to the second waveguide, wherein the cross-waveguide shown in FIG.
  • the cover layer for wrapping the core layer and the shallow etched portion corresponding to the first waveguide, and the core layer corresponding to the second waveguide And the shallow etched portion, the cover layer is specifically used for confining the light wave in the core layer during the transmission of the light wave.
  • the first waveguide and the second waveguide are both multimode waveguides, that is, waveguides capable of simultaneously transmitting a plurality of modes (generally larger than three modes). Since the light wave is transmitted in the first input waveguide 104 in the first waveguide, equivalent to being transmitted in a strip waveguide, when the light wave is transmitted in the strip waveguide, the strip waveguide is equivalent to a three-dimensional waveguide, that is, With x, y and z directions, the light wave propagates along the z direction, while in the xy plane perpendicular to the z direction, the light wave is limited in both the X direction and the y direction, so that the light wave can be considered to be a two-dimensionally constrained three-dimensional waveguide. Middle pass Lose.
  • the width of the waveguide is sharply widened due to the change of the waveguide structure, that is, the direction perpendicular to the direction in which the light wave is transmitted, which is equivalent to the light wave at this time.
  • the slab waveguide is equivalent to a two-dimensional waveguide, that is, has X and y directions, and the light wave propagates along the X direction, and the light wave is only vertical.
  • the y-direction in the X direction is limited, so that the light wave can be considered to be transmitted in a one-dimensionally constrained two-dimensional waveguide, which is equivalent to the transition of the light wave from a two-dimensionally constrained three-dimensional waveguide to a one-dimensionally constrained two-dimensional waveguide.
  • it will inevitably cause the divergence of light waves, that is, a part of the light waves will diverge into the widened waveguide, causing the loss of light waves.
  • a cross-waveguide based on Multimode Interference is generally used to reduce the divergence of light waves in the intersection region.
  • the input and output ends of the MMI cross-waveguide are single-mode waveguides, in the intersection region. It is a multimode waveguide that uses image points formed by multimode interference to reduce the loss of light waves in the intersection area.
  • the light wave When the light wave is input from the input terminal to the cross-waveguide, it first passes through the single-mode waveguide, then enters the multi-mode waveguide, and excites multiple modes in the multi-mode waveguide, and interference occurs between the modes to form a periodic distribution of the incident waveguide image points.
  • the intersection area is exactly the image point of the input waveguide, at which point the beam is focused and the divergence is reduced.
  • the light waves in the multimode waveguide are output through a single mode waveguide.
  • the MMI-based cross-waveguide uses a multimode interference imaging approach to design the structure.
  • the size of the image points formed in the intersection area is not exactly the same as the size of the input waveguide light wave, and the mutation of the waveguide type in the intersection area still causes a part of the light wave to diverge.
  • the ratio of the width of the mode field to the physical width of the waveguide body when the optical wave is transmitted in the multimode waveguide is reduced, thereby causing the light wave to be more
  • the loss in the transmission in the intersection region of the mode waveguide is smaller than the loss in the transmission of the optical wave in the intersection region of the single mode waveguide. Therefore, the first waveguide and the second waveguide in the embodiment of the present invention are both multimode waveguides; In the waveguide without the shallow etched part, only the core layer and the cover layer, the material of the core layer is silicon, the material of the cover layer is silicon dioxide, and the refractive index of the material of silicon dioxide is 3.42.
  • the waveguide in the embodiment of the present invention Core week
  • the shallow etched portion is distributed, and the material of the shallow etched portion is the same as that of the core layer, so that the refractive index of other portions in the waveguide other than the core layer is increased, so that when the light wave is transmitted into the waveguide in the waveguide In the region, the gradient of the refractive index change of the material is relatively small, so that the purpose of reducing the divergence and loss of the light wave can be achieved.
  • the first waveguide is a multimode waveguide
  • the energy loss of the optical wave caused by the transition of the optical wave from the single mode waveguide to the multimode waveguide is not caused, when the optical wave is transmitted in the two-dimensionally constrained three-dimensional waveguide, That is, when transmitting in the first input waveguide 104, since the first etched portion of the core layer of the first input waveguide 104 is distributed with the same shallow etched portion as the core material, the refractive index of the portion other than the core layer is relatively increased.
  • the light wave can be more limited to be transmitted in the core layer, and when the light wave is transmitted to the intersection region 101 along the first input waveguide 104, the width of the mode field when the light wave is transmitted is changed as compared with the single mode waveguide.
  • the ratio between the physical width of the waveguide body and the divergence of the light wave in the intersection region 101 is reduced.
  • the core layer in the first input waveguide 104 is arranged in an equal width, and the shallow etching portion is also disposed in an equal width, which can avoid the energy of the mode field change of the light wave during transmission caused by the change of the width of the core layer. loss.
  • the light wave When the light wave is output from the intersection region 101 to the first output waveguide 105, it corresponds to the transition of the light wave from the one-dimensionally constrained two-dimensional waveguide to the two-dimensionally constrained three-dimensional waveguide, and the optical wave mode field changes again, so
  • the width of the core of the first output waveguide 105 near the end of the intersection region 101 is set to be smaller than the width of the core layer of the first input waveguide 104, and the width of the core of the other end of the first output waveguide 105 is different from that of the first input waveguide 104.
  • the widths of the core layers are equal, and the width of the core layer in the first output waveguide 105 is gradual.
  • This structure can reduce the divergence of light waves as they transition from the intersection region 101 to the first output waveguide 105, thereby allowing the light waves to cross.
  • the loss in transmission in the waveguide is further reduced, and a shallow etched portion is also disposed around the core layer of the first output waveguide 105, so that the optical wave is more limited to be transmitted in the core layer of the first output waveguide 105, reducing The loss of energy when transmitting light waves.
  • the structure of the second waveguide and the principle of reducing the optical wave loss are the same as those of the first waveguide, and will not be described herein.
  • first waveguide may be a ridge waveguide; and the second waveguide may also be a ridge waveguide.
  • the material of the core layer and the shallow etched portion in the cross-waveguide provided by the embodiment of the present invention is silicon
  • the material of the cap layer is silicon dioxide.
  • the waveguide is thin silicon with a core layer thickness of 220 nm
  • the width of the incident end waveguide core layer is 10 ⁇ m
  • the width of the shallow etching portion is 14 ⁇ m
  • the fundamental mode is used to cross the waveguide
  • the horizontal axis is the propagation of light waves.
  • the vertical axis is the direction of propagation of the vertical light wave
  • the intersection of the cross-waveguide is between 15 um and 25 um.
  • the degree of divergence in the waveguide is significantly lower than that in the intersection region of the single-mode waveguide, especially in the intersection region, there is almost no divergence, that is, the electric field in Fig. 2 remains unchanged from left to right, indicating the loss of the device itself. Very small.
  • Figure 3 shows the results of numerical stability studies using the Beam Propagation Method (BPM)
  • Figure 4 shows the results of numerical stability studies using the Finite-Difference Time-Domain (FDTD) method. .
  • the vertical axis is the loss of light waves transmitted from the input end to the output end of the cross-waveguide
  • the horizontal axis is the size of the selected mesh, wherein the accuracy of the mesh response simulation map, when the grid is set to be relatively small simulation The accuracy is relatively high.
  • the cross-waveguide provided by the embodiment of the present invention includes: a first waveguide and a second waveguide, wherein the first waveguide and the second waveguide are perpendicular to each other and intersect with each other, and a region formed by a portion where the first waveguide and the second waveguide intersect is a cross a region, and the first waveguide and the second waveguide each comprise a shallow etched portion and a core layer, and the shallow etched portion is symmetrically distributed on both sides of the length direction of the core layer with respect to the axis of the core layer, wherein the input end is equally Widthd, and Appropriate adjustment of the width of the output core layer can effectively reduce the loss of energy when the light wave is transmitted in the cross-waveguide.
  • FIG. 5 is a schematic structural diagram of a cross-waveguide according to Embodiment 2 of the present invention.
  • the cross-waveguide provided by the embodiment of the present invention is applied to change a width of a shallow etched portion of an output waveguide, as shown in FIG. 5.
  • the cross-waveguide provided by the embodiment of the present invention includes a first waveguide and a second waveguide.
  • the first waveguide and the second waveguide are vertically disposed to form an intersection region 201, and the first waveguide and the second waveguide each include a shallow etch portion and a core layer, wherein the first waveguide and the second waveguide have the same composition as the cross-waveguide shown in FIG. 1, and the cross-waveguide provided by the embodiment of the present invention has the same principle as the cross-waveguide shown in FIG. I won't go into details here.
  • One end of the first waveguide is the first input waveguide 202, and the other end of the first waveguide is the first output waveguide 203, and one end of the second waveguide is the second input waveguide, and the other end of the second waveguide is the second output waveguide.
  • the width of the core layer of the first waveguide and the second waveguide in the cross-waveguide provided by the embodiment of the present invention is the same, and the width of the core layer remains unchanged throughout the structure, but the first change is made.
  • the width of the shallow etched portion of the output waveguide 203 and the shallow etched portion of the second output waveguide that is, the distance between the outer side of the shallow etched portion of the first output waveguide 203 near the end of the intersection region 201 is smaller than the first input
  • the distance between the outside of the shallow etched portion of the waveguide 202, the distance between the outside of the shallow etched portion of the other end of the first output waveguide 203 is the same as the distance between the outside of the shallow etched portion of the first input waveguide 202, And the distance between the shallow etched portions is gradually widened;
  • the second waveguide has the same structure as the first waveguide, that is, the distance between the outer sides of the shallow etched portions of the second output waveguide near one end of the intersecting region Less than the distance between
  • the width of the shallow etched portion directly affects the relative refractive index of the cover layer, the width of the shallow etched portion in the first output waveguide 203 and the second output waveguide is performed by using such a structure.
  • the optimization makes it possible to reduce the divergence loss of the light wave entering the output waveguide after passing through the intersection region.
  • the performance of the energy loss of the cross-waveguide provided by the present invention is simulated and tested in the simulation.
  • the horizontal axis is the propagation direction of the light wave, and the vertical axis is the propagation direction of the vertical light wave.
  • the divergence of the electric field generated by the light wave in the entire cross-waveguide is significantly lower than that in the prior art. , especially in the intersection area, there is almost no divergence, that is, the electric field remains unchanged, thus indicating The loss of the device itself is small.
  • the cross-waveguide provided by the embodiment of the present invention includes: a first waveguide and a second waveguide, wherein the first waveguide and the second waveguide are perpendicular to each other and intersect with each other, and a region formed by a portion where the first waveguide and the second waveguide intersect is a cross a region, and the first waveguide and the second waveguide each comprise a shallow etched portion and a core layer, and the shallow etched portion is symmetrically distributed on both sides of the length direction of the core layer with respect to the axis of the core layer, wherein the input end is equally Widthd, and Appropriate adjustment of the width of the shallow etched portion of the output can effectively reduce the loss of energy when the light wave is transmitted in the cross-waveguide.
  • FIG. 1 and FIG. 5 Another embodiment of the present invention provides a switch matrix including at least one cross-waveguide as shown in FIG. 1 and FIG. 5, and the implementation principle and technical effects are similar, and details are not described herein again.

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Abstract

一种交叉波导，包括：第一波导和第二波导，其中，第一波导和第二波导相互垂直且交叉设置，第一波导和第二波导交叉的部分所形成的区域为交叉区域（101），并且第一波导和第二波导均包括浅刻蚀部分（103）和芯层（102），浅刻蚀部分（103）相对于芯层（102）的轴线对称分布在芯层（102）的长度方向的两边，其中，通过适当的调整芯层（102）或者浅刻蚀部分（103）的宽度，可以有效的降低光波在交叉波导中传输时的能量的损耗。

Description

交叉波导
技术领域
本发明涉及光通信技术， 尤其涉及一种交叉波导。 背景技术
自第一台激光器问世以后， 人类的通信发生了深刻的变革。 光作为信息 的载体， 以其高速、 稳定的特性， 使人们的沟通变得及时而便捷。 随着科技 的发展， 传统的模块光学逐渐显示出其在功耗、 占空比方面的缺点。 光路设 计曾在多种材料中尝试过集成， 但多受制于工艺而发展有限。 而硅光由于其 与电路工艺的兼容而备受关注， 人们期望集成光学能在硅基上走过和电学同 样的道路。
硅光高的折射率对比度， 使得其可以应用于大规模高密度的集成； 同时， 它还可以利用电芯片成熟的互补金属氧化物半导体 （ Complementary Metal Oxide Semiconductor ， 简称： CMOS )工艺， 这些使得硅光独具优势。 然而， 光路却不具有电路的灵活性。在大规模的开关矩阵中， 波导的交叉不可避免。 在硅光平台中， 交叉波导是一个极为核心的器件。 若一个交叉波导的损耗值 为 0.3dB， 若在一个开关矩阵中， 交叉波导的数量为 100个， 则仅仅由交叉波 导造成的损耗就达到 30dB， 这是很严重的损耗。 所以， 减小交叉波导的损耗 就显得十分必要。
现有技术中采用基于模式展宽的交叉波导达到减小交叉波导损耗的目 的， 利用波导结构的改变， 即芯层的宽度在向着交叉区域发生了展宽以及增 加了浅刻蚀部分， 来实现光波模式的展宽， 从而达到光波场分布的改变， 以 减小光在交叉区域的发散， 现有技术中还采用基于多模干涉的交叉波导， 即 在交叉区域为多模波导， 而在输入输出端为单模波导， 从而达到减小交叉波 导损耗的目的， 即交叉波导的输入输出端是单模波导， 在交叉区域是多模波 导， 利用多模干涉所成的像点来减小光波在交叉区域的损耗。但现有技术中， 会因为场分布的变化和波导模式的变化而引入额外的损耗。 发明内容 本发明实施例提供一种交叉波导， 以克服现有技术中光波在交叉波导 中传输因为场分布的变化和波导模式的变化而带来的额外的损耗。
本发明第一方面提供一种交叉波导， 包括： 第一波导和第二波导； 其中， 所述第一波导和所述第二波导相互垂直且交叉设置， 所述第一波 导和所述第二波导交叉的部分所形成的区域为交叉区域；
所述第一波导和所述第二波导均包括浅刻蚀部分和芯层， 所述浅刻蚀部 分相对于所述芯层的轴线对称分布在所述芯层的长度方向的两边；
所述第一波导一端为第一输入波导， 另一端为第一输出波导， 所述第二 波导的一端为第二输入波导， 另一端为第二输出波导；
所述第一输入波导中的芯层等宽度设置， 所述第一输入波导中的所述浅 刻蚀部分外侧之间的距离相等；
所述第二输入波导中的芯层等宽度设置， 所述第二输入波导中的所述浅 刻蚀部分外侧之间的距离相等；
所述第一输出波导中的芯层靠近所述交叉区域的一端的宽度小于所述第 一输入波导中芯层的宽度， 所述第一输出波导的另一端芯层的宽度与所述第 一输入波导中芯层的宽度相同， 所述第一输出波导中浅刻蚀部分外侧之间的 距离相等， 所述第二输出波导中的芯层靠近所述交叉区域的一端的宽度小于 所述第二输入波导中芯层的宽度， 所述第二输出波导的另一端芯层的宽度与 所述第二输入波导中芯层的宽度相同， 所述第二输出波导中浅刻蚀部分外侧 之间的距离相等；
或者，
所述第一输出波导中靠近所述交叉区域的一端的浅刻蚀部分外侧之间的 距离小于所述第一输入波导中的浅刻蚀部分外侧之间的距离， 所述第一输出 波导的另一端浅刻蚀部分外侧之间的距离与所述第一输入波导中的浅刻蚀部 分外侧之间的距离相同， 所述第二输出波导中靠近所述交叉区域的一端的浅 刻蚀部分外侧之间的距离小于所述第二输入波导中的浅刻蚀部分外侧之间的 距离， 所述第二输出波导的另一端浅刻蚀部分外侧之间的距离与所述第二输 入波导中的浅刻蚀部分外侧之间的距离相同。
在第一方面的第一种可能的实现方式中，所述芯层的厚度大于所述浅刻 蚀部分的厚度。 在第一方面的第二种可能的实现方式中， 所述第一波导和所述第二波导 分别与所述轴线平行。
在第一方面的第三种可能的实现方式中， 所述第一输出波导的宽度逐渐 变宽， 所述第二输出波导的宽度逐渐变宽。
在第一方面的第四种可能的实现方式中， 所述第一输出波导浅刻蚀部分 的宽度逐渐变宽， 所述第二输出波导浅刻蚀部分的宽度逐渐变宽。
结合第一方面， 第一方面的第一至第四种任一种可能的实现方式， 在第 一方面的第五种可能的实现方式中，所述第一波导和第二波导均为多模波导。
结合第一方面， 第一方面的第一至第四种任一种可能的实现方式， 在第 一方面的第六种可能的实现方式中， 所述第一波导和所述第二波导均为脊形 波导。
结合第一方面， 第一方面的第一至第四种任一种可能的实现方式， 在第 一方面的第七种可能的实现方式中， 所述浅刻蚀部分的材料与所述芯层的材 料相同。
结合第一方面， 第一方面的第一至第七种任一种可能的实现方式， 在第 一方面的第八种可能的实现方式中， 所述交叉区域的中心与所述第一波导的 两端之间的距离相等；
所述交叉区域的中心与所述第二波导的两端之间的距离相等。
本发明第二方面提供一种开关矩阵， 包括至少一个如第一方面、 第一方 面第一至第八种实现方式中任一种实现方式所述的交叉波导。
本发明实施例提供的交叉波导， 包括： 第一波导和第二波导， 其中， 第 一波导和第二波导相互垂直且交叉设置， 第一波导和第二波导交叉的部分所 形成的区域为交叉区域，并且第一波导和第二波导均包括浅刻蚀部分和芯层， 浅刻蚀部分相对于芯层的轴线对称分布在芯层的长度方向的两边， 其中， 通 过适当的调整芯层或者浅刻蚀部分的宽度， 可以有效的降低光波在交叉波导 中传输时的能量的损耗。 附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案， 下面将对 实施例或现有技术描述中所需要使用的附图作一简单地介绍， 显而易见 地， 下面描述中的附图是本发明的一些实施例， 对于本领域普通技术人员 来讲， 在不付出创造性劳动性的前提下， 还可以根据这些附图获得其他的 附图。
图 1为本发明实施例一提供的交叉波导的结构示意图；
图 2为本发明实施例一提供的交叉波导中的电场分布仿真结果图； 图 3为采用 BPM的数值稳定性研究结果；
图 4为采用 FDTD的数值稳定性研究结果；
图 5为本发明实施例二提供的交叉波导的结构示意图。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚， 下面将结合本 发明实施例中的附图， 对本发明实施例中的技术方案进行清楚、 完整地描 述， 显然，所描述的实施例是本发明一部分实施例， 而不是全部的实施例。 基于本发明中的实施例， 本领域普通技术人员在没有做出创造性劳动前提 下所获得的所有其他实施例， 都属于本发明保护的范围。
本发明实施例提供一种交叉波导， 包括： 第一波导和第二波导； 其中， 第一波导和第二波导相互垂直且交叉设置， 第一波导和第二波导 交叉的部分所形成的区域为交叉区域；
第一波导和第二波导均包括浅刻蚀部分和芯层， 浅刻蚀部分相对于芯层 的轴线对称分布在芯层的长度方向的两边；
第一波导一端为第一输入波导， 另一端为第一输出波导， 第二波导的一 端为第二输入波导， 另一端为第二输出波导；
第一输入波导中的芯层等宽度设置， 第一输入波导中的所述浅刻蚀部分 外侧之间的距离相等；
第二输入波导中的芯层等宽度设置， 第二输入波导中的所述浅刻蚀部分 外侧之间的距离相等；
第一输出波导中的芯层靠近交叉区域的一端的宽度小于所述第一输入波 导中芯层的宽度， 第一输出波导的另一端芯层的宽度与第一输入波导中芯层 的宽度相同， 第一输出波导中浅刻蚀部分外侧之间的距离相等， 第二输出波 导中的芯层靠近交叉区域的一端的宽度小于所述第二输入波导中芯层的宽 度， 第二输出波导的另一端芯层的宽度与第二输入波导中芯层的宽度相同， 第二输出波导中浅刻蚀部分外侧之间的距离相等；
或者，
第一输出波导中靠近交叉区域的一端的浅刻蚀部分外侧之间的距离小于 第一输入波导中的浅刻蚀部分外侧之间的距离， 第一输出波导的另一端浅刻 蚀部分外侧之间的距离与第一输入波导中的浅刻蚀部分外侧之间的距离相 同， 第二输出波导中靠近所述交叉区域的一端的浅刻蚀部分外侧之间的距离 小于第二输入波导中的浅刻蚀部分外侧之间的距离， 第二输出波导的另一端 浅刻蚀部分外侧之间的距离与第二输入波导中的浅刻蚀部分外侧之间的距离 相同。
本发明实施例提供的交叉波导， 包括： 第一波导和第二波导， 其中， 第 一波导和第二波导相互垂直且交叉设置， 第一波导和第二波导交叉的部分所 形成的区域为交叉区域，并且第一波导和第二波导均包括浅刻蚀部分和芯层， 浅刻蚀部分相对于芯层的轴线对称分布在芯层的长度方向的两边， 其中， 通 过适当的调整芯层或者浅刻蚀部分的宽度， 可以有效的降低光波在交叉波导 中传输时的能量的损耗。
图 1为本发明实施例一提供的交叉波导的结构示意图， 本发明实施例 提供的交叉波导应用于改变输出波导中芯层的宽度的场景， 如图 1所示， 本实施例提供的交叉波导包括： 第一波导和第二波导，
其中， 第一波导和第二波导相互垂直且交叉设置， 第一波导和第二波 导交叉的部分所形成的区域为交叉区域 101， 第一波导和第二波导均包括 浅刻蚀部分 103和芯层 102， 并且浅刻蚀部分相对于芯层的轴线对称分布在 芯层的长度方向的两边。
其中， 浅刻蚀部分与芯层的材料相同， 均为硅， 在波导制造初期， 原始 波导为一块硅板， 首先在波导中确定第一波导的区域和第二波导的区域， 这 一部分波导不做处理， 然后在第一波导和第二波导周围确定浅刻蚀部分的区 域， 这一部分的波导被均匀的刻蚀， 并且刻蚀后的厚度小于第一波导和第二 波导的厚度， 刻蚀后形成浅刻蚀部分， 进一歩的， 将第一波导的区域、 第二 波导的区域以及浅刻蚀部分以外的硅板中的其他部分去除， 最后， 用二氧化 硅将处理后的硅板覆盖， 形成覆盖层， 即形成本实施例中所述的交叉波导。 进一歩的， 第一波导和第二波导分别与轴线平行。
第一波导的一端为第一输入波导 104、 第一波导的另一端为第一输出 波导 105， 也即， 第一波导由第一输入波导 104、 交叉区域 101和第一输 出波导 105组成。
如图 1所示， 第一输入波导 104中的芯层成等宽度设置， 第一输出波 导 105中的芯层靠近交叉区域 101的一端的宽度小于第一输入波导 104中 的芯层的宽度， 第一输出波导 105中芯层的另一端的宽度， 也即背离交叉 区域 101—端的芯层的宽度与第一输入波导 104中的芯层的宽度相同， 对 称分布在第一输入波导 104芯层周围的浅刻蚀部分外侧之间的距离相等， 对称分布在第一输出波导 105芯层周围的浅刻蚀部分外侧之间的距离也相 等， 也即， 如图 1所示， 在芯层长度方向的两边均匀分布着浅刻蚀部分， 这两侧浅刻蚀部分最外侧之间的距离是相等的。
与第一波导垂直分布的第二波导与第一波导有相同的结构， 也即， 第 二波导的一端为第二输入波导， 第二波导的另一端为第二输出波导， 并且 第二波导中的芯层和浅刻蚀部分的结构与第一输入波导中芯层和浅刻蚀 部分的结构完全相同， 宽度也完全相同， 不再赘述。
具体的， 如图 1所示， 所述第一波导即为图 1中横向放置的波导， 第 二波导即为图 1中竖向放置的波导， 第一波导与第二波导垂直交叉放置， 由于第一波导与第二波导垂直交叉设置， 就会形成一个交叉区域 101， 并 且交叉区域 101的中心距离第一波导两端的距离相等， 交叉区域 101的中 心距离第二波导两端的距离也相等，并且第一波导与第二波导等长，其中， 图 1所示的交叉波导还包括覆盖层， 覆盖层用于包裹第一波导对应的芯层 和浅刻蚀部分， 以及第二波导对应的芯层和浅刻蚀部分， 覆盖层具体用于 在光波传输的过程中， 将光波约束在芯层中传输。
进一歩的， 第一波导与第二波导均为多模波导， 即可以同时传输多个 模式 （一般大于 3个模式） 的波导。 由于当光波在第一波导中的第一输入 波导 104中传输时， 相当于在一个条形波导中传输， 当光波在条形波导中 传输时， 条形波导相当于一个三维的波导， 也即具有 x、 y和 z方向， 光 波沿着 z方向传播， 而在垂直于 z方向的 x-y平面上， 光波在 X方向和 y 方向均受到限制， 从而可以认为光波是在一个二维限制的三维波导中传 输。
当光波沿着第一输入波导 104传输至交叉区域 101时， 由于发生了波 导结构的变化， 也即， 在与光波传输的方向垂直的方向上的波导的宽度急 剧变宽， 此时相当于光波从条形波导过渡到平板波导中传输， 当光波在平 板波导中传输时， 平板波导相当于一个二维的波导， 也即具有 X方向和 y 方向，光波沿着 X方向传播，光波仅仅在垂直于 X方向的 y方向受到限制， 从而可以认为光波是在一个一维限制的二维波导中传输， 此时， 相当于光 波从一个二维限制的三维波导过渡到一个一维限制的二维波导中， 必然会 造成光波的发散， 也即， 会有一部分光波发散到展宽的波导中去， 造成光 波的损耗。
在现有技术中一般采用基于多模干涉（Multimode Interference, 简称： MMI ) 的交叉波导以减小光波在交叉区域的发散， 具体为， MMI交叉波导 的输入输出端是单模波导， 在交叉区域是多模波导， 利用多模干涉所成的 像点来减小光波在交叉区域的损耗。 当光波从输入端输入至交叉波导时， 首先经过单模波导， 然后进入多模波导， 并在多模波导里激发多个模式， 模式间发生干涉， 形成入射波导像点的周期分布。 在交叉区域正好是输入 波导的像点， 此时光束聚焦， 发散减小。 在通过交叉区域后， 多模波导中 的光波经单模波导输出。基于 MMI的交叉波导利用多模干涉成像的方法来 设计结构。但其在交叉区域所成的像点大小并非完全等同于输入波导光波 的大小， 在交叉区域波导类型的突变仍然会使一部分的光波发散。 另外光 波从单模波导传输过渡到多模波导传输也存在着损耗。
在图 1所示的本发明实施例提供的交叉波导中， 首先， 由于光波在多 模波导中传输时的模场的宽度与波导实体的物理宽度之间的比例减小， 从 而使得光波在多模波导构成的交叉区域中传输时的损耗小于光波在单模 波导构成的交叉区域中传输时的损耗， 因此， 本发明实施例中的第一波导 和第二波导均为多模波导； 其次， 在没有浅刻蚀部分， 只有芯层和覆盖层 的波导中， 芯层的材料为硅， 覆盖层的材料为二氧化硅， 由于硅的折射率 为 3.42， 二氧化硅的材料为的折射率为 1.4， 当光波在波导中传输进入交 叉波导区域时， 由于波导结构发生了很大的突变， 使得材料的折射率变化 梯度比较大， 从而导致光波发散， 因此， 在本发明实施例中的波导芯层周 围分布有浅刻蚀部分， 并且浅刻蚀部分的材料与芯层相同， 这样会使得除 去芯层以外的波导中的其他部分的折射率变高， 从而使得当光波在波导中 传输进入交叉波导区域时， 材料的折射率变化梯度比较小， 从而可以达到 减小了光波的发散和损耗的目的。
具体的， 由于第一波导为多模波导， 从而不会带来光波从单模波导向 多模波导过渡时带来的光波的能量的损耗， 当光波在二维限制的三维波导 中传输时， 也即在第一输入波导 104中传输时， 由于第一输入波导 104的 芯层周围分布有较宽的与芯层材料相同的浅刻蚀部分， 使得除芯层以外部 分的折射率相对的提高， 从而可以使得光波更多的局限在芯层中传输， 并 且当光波沿着第一输入波导 104传输至交叉区域 101时，与单模波导相比， 由于改变了光波传输时的模场的宽度与波导实体的物理宽度之间的比例 使得光波在交叉区域 101的发散减小。 并且第一输入波导 104中的芯层呈 等宽度设置， 以及浅刻蚀部分同样呈等宽度设置， 可以避免芯层宽度的改 变而带来的光波在传输时模场变化所带来的能量的损耗。
当光波从交叉区域 101中输出至第一输出波导 105中时， 相当于光波 从一维限制的二维波导过渡到二维限制的三维波导中， 此时光波模场会再 次发生变化， 因此在将第一输出波导 105芯层靠近交叉区域 101的一端的 宽度设置为小于第一输入波导 104的芯层的宽度， 而第一输出波导 105的 另一端的芯层宽度与第一输入波导 104的芯层的宽度相等， 并且第一输出 波导 105 中的芯层的宽度是渐变的， 这种结构可以减小光波从交叉区域 101过渡到第一输出波导 105时的发散， 从而可以使得光波在交叉波导中 传输时的损耗进一歩的减小， 并且第一输出波导 105的芯层周围也设置有 浅刻蚀部分， 使得光波更多的局限在第一输出波导 105的芯层中传输， 减 小了光波传输时的能量的损耗。
当光波在第二波导中传输时， 第二波导的结构以及减小光波损耗的原 理与第一波导相同， 此处不再赘述。
进一歩的， 所述第一波导可以为脊形波导； 并且第二波导也可以为脊 形波导。
进一歩的， 本发明实施例提供的交叉波导中的芯层和浅刻蚀部分的材 料为硅， 覆盖层的材料为二氧化硅。 另外， 为了进一歩清楚对比本发明中的交叉波导与现有技术中交叉波 导的减小损耗的效果， 下面对本发明提供的交叉波导的能量损耗的性能进 行了仿真测试， 本发明实施例提供的交叉波导中的电场分布仿真结果如图
2所示。
其中， 仿真数据中， 波导为芯层厚度为 220nm的薄硅， 入射端波导芯 层的宽度为 lOum, 浅刻蚀部分的宽度为 14um， 并且采用基模通过交叉波 导， 横轴为光波的传播方向， 纵轴为垂直光波的传播方向， 交叉波导的交 叉区域为 15 um-25 um之间， 从图 2中可以看出， 当光波在交叉波导中传 输时， 光波所产生的电场在整个交叉波导中的发散程度与单模波导交叉区 域中的电场相比明显降低， 特别是在交叉区域几乎没有发散， 也即图 2中 的电场从左到右都保持不变， 从而说明器件本身的损耗很小。
由于器件本身的损耗比较小， 需要对数值仿真的结果做稳定性研究， 以确保所得的结果是稳定可靠的。 图 3 为采用光束传播法 (Beam Propagation Method, 简称： BPM)的数值稳定性研究结果， 图 4为采用时 域有限差分法 （ Finite-Difference Time-Domain, 简称： FDTD ) 的数值稳 定性研究结果。
其中， 纵轴为光波从交叉波导中的输入端传输至输出端的损耗， 横轴 为选取的网格的大小， 其中， 网格反应仿真图的精度的大小， 当网格设置 的比较小时的仿真精度比较高， 从图 3和图 4可以看出， 光波在交叉波导 中传输的过程中， 采用 BPM对数值稳定性分析的结果与采用 FDTD对数 值稳定性分析的结果吻合的很好， 这说明所得的结果是可信的。 并且， 从 图 3和图 4的仿真结果可以看出该交叉波导的损耗为 0.023分贝。
本发明实施例提供的交叉波导， 包括： 第一波导和第二波导， 其中， 第 一波导和第二波导相互垂直且交叉设置， 第一波导和第二波导交叉的部分所 形成的区域为交叉区域，并且第一波导和第二波导均包括浅刻蚀部分和芯层， 浅刻蚀部分相对于芯层的轴线对称分布在芯层的长度方向的两边， 其中， 输 入端等宽度设置， 并适当的调整输出端芯层的宽度， 可以有效的降低光波在 交叉波导中传输时的能量的损耗。
图 5为本发明实施例二提供的交叉波导的结构示意图， 本发明实施例 提供的交叉波导应用于改变输出波导中浅刻蚀部分的宽度的场景， 如图 5 所示， 本发明实施例提供的交叉波导包括第一波导和第二波导， 第一波导 与第二波导垂直交叉设置形成交叉区域 201， 并且第一波导和第二波导均 包括浅刻蚀部分和芯层， 其中， 第一波导与第二波导的组成与图 1所示的 交叉波导相同， 并且本发明实施例提供的交叉波导与图 1所示的交叉波导 减小光波的损耗的原理相同， 此处不再赘述
第一波导的一端为第一输入波导 202、 第一波导的另一端为第一输出 波导 203， 且第二波导的一端为第二输入波导、 第二波导的另一端为第二 输出波导。
如图 5所示， 本发明实施例提供的交叉波导中的第一波导与第二波导 的芯层的宽度相同， 并且在整个结构中， 芯层的宽度均保持不变， 只是改 变了第一输出波导 203 中浅刻蚀部分与第二输出波导中浅刻蚀部分的宽 度， 也即， 第一输出波导 203中靠近交叉区域 201的一端的浅刻蚀部分外侧 之间的距离小于第一输入波导 202中的浅刻蚀部分外侧之间的距离， 第一输 出波导 203的另一端浅刻蚀部分外侧之间的距离与第一输入波导 202中的浅 刻蚀部分外侧之间的距离相同， 并且浅刻蚀部分之间的距离是逐渐变宽的； 第二波导具有与第一波导相同的结构， 也即， 第二输出波导中靠近交叉区域 的一端的浅刻蚀部分外侧之间的距离小于第二输入波导中的浅刻蚀部分外侧 之间的距离， 第二输出波导的另一端浅刻蚀部分外侧之间的距离与第二输入 波导中的浅刻蚀部分外侧之间的距离相同，由于浅刻蚀部分的宽度会直接影 响覆盖层的相对折射率， 采用此种结构， 对第一输出波导 203和第二输出 波导中的浅刻蚀部分的宽度进行了优化， 可以使得光波在通过交叉区域后 进入输出波导中的发散损耗会减小。
另外， 为了进一歩清楚对比本发明中的交叉波导与现有技术中交叉波 导的减小损耗的效果， 下面对本发明提供的交叉波导的能量损耗的性能进 行了仿真测试， 在仿真中， 采用芯层厚度为 220nm的波导， 波导的材料为 硅， 入射端芯层宽度为 lOum, 输出端芯层宽度为 lOum, 输入端的浅刻蚀 部分外侧之间的距离为 14um， 并且采用基模通过交叉波导， 横轴为光波 的传播方向， 纵轴为垂直光波的传播方向， 当光波在交叉波导中传输时， 光波所产生的电场在整个交叉波导中的发散程度相比现有技术中会明显 的降低， 特别是在交叉区域几乎没有发散， 也即电场保持不变， 从而说明 器件本身的损耗很小。
本发明实施例提供的交叉波导， 包括： 第一波导和第二波导， 其中， 第 一波导和第二波导相互垂直且交叉设置， 第一波导和第二波导交叉的部分所 形成的区域为交叉区域，并且第一波导和第二波导均包括浅刻蚀部分和芯层， 浅刻蚀部分相对于芯层的轴线对称分布在芯层的长度方向的两边， 其中， 输 入端等宽度设置， 并适当的调整输出端浅刻蚀部分的宽度， 可以有效的降低 光波在交叉波导中传输时的能量的损耗。
本发明另一个实施例提供了一种开关矩阵， 包括至少一个如图 1和图 5所示的交叉波导， 其实现原理和技术效果类似， 此处不再赘述。
最后应说明的是： 以上各实施例仅用以说明本发明的技术方案， 而非对 其限制； 尽管参照前述各实施例对本发明进行了详细的说明， 本领域的普通 技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改， 或者对其中部分或者全部技术特征进行等同替换； 而这些修改或者替换， 并 不使相应技术方案的本质脱离本发明各实施例技术方案的范围。

Claims

权 利 要 求 书
1、 一种交叉波导， 其特征在于， 包括： 第一波导和第二波导； 其中， 所述第一波导和所述第二波导相互垂直且交叉设置， 所述第一波 导和所述第二波导交叉的部分所形成的区域为交叉区域；
所述第一波导和所述第二波导均包括浅刻蚀部分和芯层， 所述浅刻蚀部 分相对于所述芯层的轴线对称分布在所述芯层的长度方向的两边；
所述第一波导一端为第一输入波导， 另一端为第一输出波导， 所述第二 波导的一端为第二输入波导， 另一端为第二输出波导；
所述第一输入波导中的芯层等宽度设置， 所述第一输入波导中的所述浅 刻蚀部分外侧之间的距离相等；
所述第二输入波导中的芯层等宽度设置， 所述第二输入波导中的所述浅 刻蚀部分外侧之间的距离相等；
所述第一输出波导中的芯层靠近所述交叉区域的一端的宽度小于所述第 一输入波导中芯层的宽度， 所述第一输出波导的另一端芯层的宽度与所述第 一输入波导中芯层的宽度相同， 所述第一输出波导中浅刻蚀部分外侧之间的 距离相等， 所述第二输出波导中的芯层靠近所述交叉区域的一端的宽度小于 所述第二输入波导中芯层的宽度， 所述第二输出波导的另一端芯层的宽度与 所述第二输入波导中芯层的宽度相同， 所述第二输出波导中浅刻蚀部分外侧 之间的距离相等；
或者，
所述第一输出波导中靠近所述交叉区域的一端的浅刻蚀部分外侧之间的 距离小于所述第一输入波导中的所述浅刻蚀部分外侧之间的距离， 所述第一 输出波导的另一端浅刻蚀部分外侧之间的距离与所述第一输入波导中的浅刻 蚀部分外侧之间的距离相同， 所述第二输出波导中靠近所述交叉区域的一端 的浅刻蚀部分外侧之间的距离小于所述第二输入波导中的所述浅刻蚀部分外 侧之间的距离， 所述第二输出波导的另一端浅刻蚀部分外侧之间的距离与所 述第二输入波导中的浅刻蚀部分外侧之间的距离相同。
2、 根据权利要求 1所述的方法， 其特征在于， 所述芯层的厚度大于所 述浅刻蚀部分的厚度。
3、 根据权利要求 1所述的交叉波导， 其特征在于， 所述第一波导和所述 第二波导分别与所述轴线平行。
4、 根据权利要求 1所述的交叉波导， 其特征在于， 所述第一输出波导的 宽度逐渐变宽， 所述第二输出波导的宽度逐渐变宽。
5、 根据权利要求 1所述的交叉波导， 其特征在于， 所述第一输出波导浅 刻蚀部分的宽度逐渐变宽， 所述第二输出波导浅刻蚀部分的宽度逐渐变宽。
6、 根据权利要求 1-5任一项所述的交叉波导， 其特征在于， 所述第一波 导和所述第二波导均为多模波导。
7、 根据权利要求 1-5任一项所述的交叉波导， 其特征在于， 所述第一波 导和所述第二波导均为脊形波导。
8、 根据权利要求 1-5任一项所述的交叉波导， 其特征在于， 所述浅刻蚀 部分的材料与所述芯层的材料相同。
9、 根据权利要求 1-8任一项所述的交叉波导， 其特征在于， 所述交叉区 域的中心与所述第一波导的两端之间的距离相等；
所述交叉区域的中心与所述第二波导的两端之间的距离相等。
10、 一种开关矩阵， 其特征在于， 包括至少一个如权利要求 1-9任一项 所述的交叉波导。
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