WO2015197555A1 - Anordnung zur bestimmung von eigenschaften und/oder parametern einer probe und/oder mindestens einer auf oder an einer oberfläche einer probe ausgebildeten schicht - Google Patents

Anordnung zur bestimmung von eigenschaften und/oder parametern einer probe und/oder mindestens einer auf oder an einer oberfläche einer probe ausgebildeten schicht Download PDF

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Publication number
WO2015197555A1
WO2015197555A1 PCT/EP2015/063984 EP2015063984W WO2015197555A1 WO 2015197555 A1 WO2015197555 A1 WO 2015197555A1 EP 2015063984 W EP2015063984 W EP 2015063984W WO 2015197555 A1 WO2015197555 A1 WO 2015197555A1
Authority
WO
WIPO (PCT)
Prior art keywords
sample
electromagnetic radiation
detectors
wavelength
layer
Prior art date
Application number
PCT/EP2015/063984
Other languages
German (de)
English (en)
French (fr)
Inventor
Wulf Grählert
Philipp Wollmann
Florian Gruber
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. filed Critical Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority to JP2016575491A priority Critical patent/JP2017525945A/ja
Priority to EP15730192.0A priority patent/EP3158323B1/de
Priority to ES15730192T priority patent/ES2919872T3/es
Priority to US15/321,465 priority patent/US10228329B2/en
Publication of WO2015197555A1 publication Critical patent/WO2015197555A1/de

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/8422Investigating thin films, e.g. matrix isolation method
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21Polarisation-affecting properties
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/8422Investigating thin films, e.g. matrix isolation method
    • G01N2021/8438Mutilayers

Definitions

  • the invention relates to an arrangement for determining properties and / or parameters of a sample and / or at least one layer formed on or on a surface of a sample.
  • a sample is to be understood to mean solids, solids coated with at least one layer, or elements formed from a plurality of layers arranged one above the other.
  • Thin layers are essential in a large number of applications, for example semiconductor layers, wear-resistant layers, optical layers, etc., as such.
  • layers For their functionality, it is necessary to adhere to predetermined layer parameters / properties within given tolerance ranges.
  • the important parameters here are the layer thickness (s), the optical refractive index (s), the Absorption constant (s) at certain wavelengths or the parameters for describing their behavior over a certain wavelength range) be.
  • Further properties of layers as well as homogeneous samples may be the number of contained charge carriers per area or volume (charge carrier concentration) or contained inhomogeneities or defects (particles, inclusions, etc.).
  • the layer thickness distribution may usually be e.g. be determined interferometrically.
  • Parameters or properties can be used ellipsometry.
  • this is possible at the same time only for one wavelength, whereby the accuracy and / or the time required are disadvantageous.
  • the arrangement according to the invention for determining properties and / or parameters of a sample and / or at least one layer formed on a surface of a sample or present on the sample has a plurality of detectors which are designed for spatially resolved spectral analysis of electromagnetic radiation within a wavelength interval , These detectors are arranged in a row or in a row and column arrangement. The detectors are connected to an electronic evaluation unit and arranged so that of a broadband
  • Radiation source emitted electromagnetic radiation either after a reflection at the surface of the sample or a layer formed on the sample and / or after the irradiation of a transparent to the electromagnetic radiation sample on the detectors.
  • the irradiation takes place in such a way that a homogeneous intensity of the electromagnetic radiation is maintained on a surface from which the electromagnetic radiation is reflected or transmitted through the surface.
  • the area to be detected simultaneously should therefore be irradiated with homogeneous intensity.
  • the electronic evaluation unit is designed such that the measurement signals of the detectors detected at the position and wavelength resolution within a wavelength interval with a theoretical wavelength-dependent profile of the respective measured radiation intensities obtained by simulation or at least one known by a calibration
  • the wavelength interval in which the evaluation takes place should be at least a subset of the wavelength interval of the electromagnetic radiation used for the irradiation.
  • At least 30, preferably at least 100 detectors should be arranged.
  • the irradiation of the surface should have at least one angle in the range 0 ⁇ 90 ° with respect to the normal of the surface of the sample.
  • the angle of at least approximately 0 ° to the sample standard should be maintained, ie the radiation should be directed as perpendicularly as possible to the surface of the sample in order to keep the reflected portion as small as possible.
  • the irradiation and detection can also be carried out with variable angle of incidence of the electromagnetic radiation.
  • angles of incidence ranging from 45 ° to a maximum of 89 ° can be selected.
  • Incident angles in the range of 60 ° to 80 ° are preferred when reflected radiation is to be detected, regardless of whether a constant angle of incidence or different angles of incidence are to be used.
  • Irradiation or detection can also be carried out with polarized electromagnetic radiation.
  • the orientation of the polarization plane can be changed and the electromagnetic radiation with different polarization emitted and / or detected accordingly.
  • the layer thickness (s), the optical refractive index (n), their wavelength-dependent profiles, the absorption constant (s), their wavelength-dependent profiles, the surface quality of the sample or at least one layer formed on the sample, the charge carrier concentration and / or the number and / or size of defects / particles or inhomogeneities in the sample or at least one layer are determined.
  • a thickness and a surface quality determination can be performed simultaneously.
  • the surface roughness can be determined. It can also be the size of individual defects or
  • the detectors and the sample can be moved relative to one another along at least one axis, and preferably at a constant distance from one another.
  • a sample can be moved in one axis.
  • This can be moved with a correspondingly movable table, on which a sample is arranged, in an x and possibly also in ay direction.
  • the sample is made of a flexible deformable material, for example in the form of a film.
  • the electromagnetic radiation forming elements may be present.
  • the radiation source may be a microscope.
  • a radiation source it is also possible for a radiation source to be arranged in a hollow body, from which the electromagnetic radiation can emerge diffusely and can be directed onto the surface to be irradiated.
  • the hollow body may be a ball or cylinder. It should be possible to homogeneously irradiate a surface to be detected simultaneously.
  • the wavelength range used should be taken into account in the selection of the respectively used optical elements which serve for beam shaping.
  • a diaphragm avoiding the incidence of scattered electromagnetic radiation can be arranged in front of the detectors.
  • the radiation source can emit electromagnetic radiation whose wavelengths begin with the UV radiation and end with the IR radiation. Radiation from the NIR and IR range is therefore particularly preferred from 700 nm to 10000 nm. It should be possible to use as many wavelengths within the respective interval as possible for a given wavelength range for the irradiation. The limits should be determined solely by the sensitivity range of the detectors used and the optical properties of the beam guiding components. For very thin layers, it is preferable to work with wavelengths in the UV / VIS range (from 250 nm).
  • At least one element with which a targeted choice of the polarization of the electromagnetic radiation can be achieved may also be present or integrated therein.
  • a sample may also be a multi-layer structure, multiple layers formed of different materials or materials.
  • a substrate are formed on the at least partially transparent to the electromagnetic radiation used layers.
  • the substrate can be correspondingly transparent.
  • the transparency may relate to a portion of the wavelength spectrum of the emitted electromagnetic radiation and / or an unabsorbed portion of the entire wavelength spectrum of the radiation.
  • the detectors used and the electronic evaluation unit and possibly also the radiation source can also represent a so-called hyper-spectral image system, which can be used in the arrangement according to the invention.
  • the simultaneously spatially resolved detected spectra (at each detected position) can be evaluated as follows with respect to the material or material parameter of interest or its property.
  • the entire structure can be described physically by means of a parameterized optical model.
  • the sample parameters to be determined can be determined by regression (fit) of a spectrum simulated on the basis of the optical model to the measured spectrum, which is e.g. can be achieved by linear or nonlinear curve fitting or minimizing the sum of the least squares fit. If adequate adjustment is not possible, the measurement results should be discarded or they may be considered a disturbance in the layer or sample surface.
  • the relationship "spectrum - the target parameter (s)" can be calibrated with the aid of samples with known target parameter value (s). With the aid of this calibration model, the target parameter (s) can be determined from each measured spectrum (at each location).
  • PCA Principal Component Analysis
  • PLS Partial Least Square Analysis
  • Microscope illumination can be used.
  • a "diffuser setup” in particular at least one radiation source which is arranged inside a hollow body (for example an integrating sphere or a hollow cylinder) can be used for the irradiation.
  • one or more angles of incidence in the range 0 ° -85 ° can be used for a reflection setup.
  • transmission / reflection measurement, combination of different angles of incidence, the use and combination of different polarization planes of the electromagnetic radiation can be combined with one another in a wide variety of forms.
  • detectors It is also possible to use a plurality of rows or rows and column arrangements of detectors, which can then be arranged one after the other in the direction of movement, for example. These arrangements of detectors can each detect at different measuring conditions.
  • a rapid characterization of an entire sample with respect to a target parameter can be achieved in a short time.
  • the user may promptly receive, for example, a "layer thickness image" of the sample. It is also a pictorial representation of defects or local carrier concentration or chemical composition possible.
  • the obtained information can be used for the monitoring of coating processes (inline control), the development of coating systems as well as the quality control (lateral distribution of relevant layer parameters).

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Absorbent Articles And Supports Therefor (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
PCT/EP2015/063984 2014-06-23 2015-06-22 Anordnung zur bestimmung von eigenschaften und/oder parametern einer probe und/oder mindestens einer auf oder an einer oberfläche einer probe ausgebildeten schicht WO2015197555A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016575491A JP2017525945A (ja) 2014-06-23 2015-06-22 サンプル及び/又はサンプル表面に形成された少なくとも1つのフィルムの特性及び/又はパラメータを測定するためのアレンジメント
EP15730192.0A EP3158323B1 (de) 2014-06-23 2015-06-22 Anordnung zur bestimmung von eigenschaften und/oder parametern einer probe und/oder mindestens einer auf oder an einer oberfläche einer probe ausgebildeten schicht
ES15730192T ES2919872T3 (es) 2014-06-23 2015-06-22 Disposición para la determinación de propiedades y/o parámetros de una muestra y/o al menos una capa configurada sobre o en una superficie de una muestra
US15/321,465 US10228329B2 (en) 2014-06-23 2015-06-22 Arrangement for determining properties and/or parameters of a sample and/or of at least one film formed on the surface of a sample

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014009372.7A DE102014009372B4 (de) 2014-06-23 2014-06-23 Verfahren zur Bestimmung von Eigenschaften und/oder Parametern einer Probe und/oder mindestens einer auf einer Oberfläche einer Probe ausgebildeten Schicht
DE102014009372.7 2014-06-23

Publications (1)

Publication Number Publication Date
WO2015197555A1 true WO2015197555A1 (de) 2015-12-30

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PCT/EP2015/063984 WO2015197555A1 (de) 2014-06-23 2015-06-22 Anordnung zur bestimmung von eigenschaften und/oder parametern einer probe und/oder mindestens einer auf oder an einer oberfläche einer probe ausgebildeten schicht

Country Status (6)

Country Link
US (1) US10228329B2 (enrdf_load_stackoverflow)
EP (1) EP3158323B1 (enrdf_load_stackoverflow)
JP (1) JP2017525945A (enrdf_load_stackoverflow)
DE (1) DE102014009372B4 (enrdf_load_stackoverflow)
ES (1) ES2919872T3 (enrdf_load_stackoverflow)
WO (1) WO2015197555A1 (enrdf_load_stackoverflow)

Cited By (1)

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CN111273311A (zh) * 2020-01-03 2020-06-12 电子科技大学 一种激光三维焦平面阵列成像系统

Families Citing this family (4)

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DE102015217091B4 (de) 2015-09-07 2017-05-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V Anordnung zur Bestimmung der erreichbaren Haftfestigkeit vor Ausbildung einer stoffschlüssigen Verbindung an einer Oberfläche eines Fügepartners
DE102015223853B4 (de) * 2015-12-01 2025-07-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Anordnung zur Bestimmung der Tiefe von in Oberflächen eines Substrates, auf dem mindestens eine Schicht aus einem vom Substratmaterial abweichenden Material ausgebildet ist, ausgebildeten Vertiefungen
DE102017217231A1 (de) * 2017-09-27 2019-03-28 Robert Bosch Gmbh Verfahren zur Bestimmung von oxydischen und/oder organischen Belegungen einer Probe mit einer Metalloberfläche
JP7171578B2 (ja) * 2018-03-30 2022-11-15 Jfeスチール株式会社 粉率測定装置、粉率測定システム、高炉操業方法および粉率測定方法

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US7301649B2 (en) * 2000-09-27 2007-11-27 Kla-Tencor Technologies Corporation System for scatterometric measurements and applications
DE102006034776B3 (de) * 2006-07-27 2008-03-06 Infineon Technologies Ag Verfahren und Messvorrichtung zur ellipsometrischen Vermessung von Strukturelementen sowie Verwendung des Verfahrens
US20080245979A1 (en) * 2007-04-06 2008-10-09 Xerox Corporation Gloss and differential gloss measuring system
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Also Published As

Publication number Publication date
DE102014009372A1 (de) 2015-12-24
US10228329B2 (en) 2019-03-12
US20170212056A1 (en) 2017-07-27
EP3158323B1 (de) 2022-05-11
DE102014009372B4 (de) 2025-04-30
JP2017525945A (ja) 2017-09-07
ES2919872T3 (es) 2022-07-28
EP3158323A1 (de) 2017-04-26

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