WO2015194471A1 - 水素排出膜 - Google Patents
水素排出膜 Download PDFInfo
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- WO2015194471A1 WO2015194471A1 PCT/JP2015/067001 JP2015067001W WO2015194471A1 WO 2015194471 A1 WO2015194471 A1 WO 2015194471A1 JP 2015067001 W JP2015067001 W JP 2015067001W WO 2015194471 A1 WO2015194471 A1 WO 2015194471A1
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- film
- hydrogen discharge
- hydrogen
- mol
- alloy
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- 239000001257 hydrogen Substances 0.000 title claims abstract description 186
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 186
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 239000013078 crystal Substances 0.000 claims abstract description 42
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 28
- 239000000956 alloy Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 150000002431 hydrogen Chemical class 0.000 claims description 139
- 239000012528 membrane Substances 0.000 claims description 30
- 239000010931 gold Substances 0.000 claims description 23
- 239000003990 capacitor Substances 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 9
- -1 polytetrafluoroethylene Polymers 0.000 claims description 8
- 239000011148 porous material Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910001416 lithium ion Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229920002492 poly(sulfone) Polymers 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000004962 Polyamide-imide Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- 239000004760 aramid Substances 0.000 claims description 4
- 229920003235 aromatic polyamide Polymers 0.000 claims description 4
- 229920002312 polyamide-imide Polymers 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 6
- 239000005001 laminate film Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 162
- 238000004544 sputter deposition Methods 0.000 description 25
- 239000011521 glass Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 20
- 238000005096 rolling process Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 17
- 229910001316 Ag alloy Inorganic materials 0.000 description 14
- 239000002994 raw material Substances 0.000 description 8
- 229910001020 Au alloy Inorganic materials 0.000 description 7
- 229910052763 palladium Inorganic materials 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000035699 permeability Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910002668 Pd-Cu Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 230000009172 bursting Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
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- 238000001816 cooling Methods 0.000 description 2
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- 229910001325 element alloy Inorganic materials 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 108700031620 S-acetylthiorphan Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- HJUFTIJOISQSKQ-UHFFFAOYSA-N fenoxycarb Chemical compound C1=CC(OCCNC(=O)OCC)=CC=C1OC1=CC=CC=C1 HJUFTIJOISQSKQ-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000110 poly(aryl ether sulfone) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
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- 238000003825 pressing Methods 0.000 description 1
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- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 238000000108 ultra-filtration Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
- H01M50/30—Arrangements for facilitating escape of gases
- H01M50/394—Gas-pervious parts or elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
- B01D69/02—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor characterised by their properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
- B01D69/12—Composite membranes; Ultra-thin membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
- B01D69/12—Composite membranes; Ultra-thin membranes
- B01D69/1213—Laminated layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
- B01D71/02—Inorganic material
- B01D71/022—Metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
- B01D71/02—Inorganic material
- B01D71/022—Metals
- B01D71/0223—Group 8, 9 or 10 metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B3/00—Rolling materials of special alloys so far as the composition of the alloy requires or permits special rolling methods or sequences ; Rolling of aluminium, copper, zinc or other non-ferrous metals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
- C01B3/50—Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification
- C01B3/501—Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by diffusion
- C01B3/503—Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by diffusion characterised by the membrane
- C01B3/505—Membranes containing palladium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/04—Alloys based on a platinum group metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/14—Arrangements or processes for adjusting or protecting hybrid or EDL capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/08—Housing; Encapsulation
- H01G9/12—Vents or other means allowing expansion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
- H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
- H01M50/30—Arrangements for facilitating escape of gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
- H01M50/30—Arrangements for facilitating escape of gases
- H01M50/342—Non-re-sealable arrangements
- H01M50/3425—Non-re-sealable arrangements in the form of rupturable membranes or weakened parts, e.g. pierced with the aid of a sharp member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M2200/00—Safety devices for primary or secondary batteries
- H01M2200/20—Pressure-sensitive devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Definitions
- the present invention relates to a hydrogen discharge membrane provided in electrochemical elements such as batteries, capacitors, capacitors, and sensors. More specifically, the present invention relates to a hydrogen discharge membrane having a function of discharging generated hydrogen to the outside under an environment of use of about 150 ° C. or lower in an electrochemical element in which hydrogen gas is generated and the internal pressure is increased during use.
- Aluminum electrolytic capacitors have been used for applications such as inverters for wind power generation and solar power generation, large power sources such as storage batteries.
- Aluminum electrolytic capacitors may generate hydrogen gas inside due to reverse voltage, overvoltage, and overcurrent, and if a large amount of hydrogen gas is generated, the outer case may burst due to an increase in internal pressure.
- a general aluminum electrolytic capacitor is provided with a safety valve equipped with a special film.
- the safety valve has a function to prevent the capacitor itself from bursting by self-destructing and reducing the internal pressure when the internal pressure of the capacitor suddenly increases. is there.
- the following has been proposed as a special membrane that is a component of such a safety valve.
- Patent Document 1 proposes a pressure adjusting film including a foil strip made of an alloy of paradium silver (Pd—Ag) containing 20 wt% (19.8 mol%) Ag in paradium.
- lithium-ion batteries are widely used as batteries for mobile phones, notebook computers, and automobiles.
- lithium-ion batteries have become increasingly interested in safety in addition to increasing capacity and improving cycle characteristics.
- a lithium ion battery generates gas in the cell, and there is a concern about expansion and rupture of the battery pack accompanying an increase in internal pressure.
- Patent Document 2 discloses an amorphous alloy (for example, 36Zr-64Ni alloy) made of an alloy of zirconium (Zr) and nickel (Ni) as a hydrogen selective permeable alloy film that selectively permeates hydrogen gas generated in a battery.
- amorphous alloy for example, 36Zr-64Ni alloy
- Zr zirconium
- Ni nickel
- Such an alloy film is required not to be self-destructed until the internal pressure of the electrochemical element exceeds a predetermined level.
- the conventional alloy film has a problem that the reliability as a safety valve is low because cracks may be generated or shattered before the internal pressure of the electrochemical element reaches a predetermined pressure.
- the present invention has been made in view of the above-described problems, and does not cause defects such as cracks before the internal pressure of the electrochemical element reaches a predetermined pressure, and has a high reliability as a safety valve. And it aims at providing a hydrogen exhausting laminated film. Moreover, it aims at providing the electrochemical element provided with the safety valve for electrochemical elements provided with the said hydrogen discharge
- the present invention relates to a hydrogen discharge film containing an alloy containing Pd as an essential metal, wherein the crystal grain size of the alloy is 0.028 ⁇ m or more.
- the hydrogen discharge film containing an alloy containing Pd as an essential metal is composed of a polycrystal. Further, when hydrogen is permeated through the hydrogen discharge film, the hydrogen moves so as to sew a gap between atoms constituting the hydrogen discharge film. That is, hydrogen is temporarily stored in the hydrogen discharge film. Further, the moving hydrogen is replaced with atoms in the hydrogen discharge film and stays in the hydrogen discharge film. That is, since hydrogen accumulates in the hydrogen discharge film, the volume of the hydrogen discharge film changes, and stress is generated due to the volume change. Since this stress is concentrated at the interface (crystal grain boundary) between crystal grains, which can be said to be a structural defect in the film, distortion occurs at the interface between crystal grains. As a result, it is considered that defects such as cracks occur in the hydrogen discharge film.
- the present inventor has examined based on the above knowledge, and in the case of a hydrogen discharge film containing an alloy containing Pd as an essential metal, if the crystal grain size of the alloy is 0.028 ⁇ m or more, the crystal grains It has been found that stress concentration at the interface is suppressed, so that defects such as cracks are less likely to occur in the hydrogen discharge film.
- the alloy preferably contains 20 to 65 mol% of a Group 11 element.
- the Group 11 element is preferably at least one selected from the group consisting of gold, silver, and copper.
- the hydrogen discharge film containing Pd-Group 11 element alloy dissociates hydrogen molecules into hydrogen atoms on the film surface, so that the hydrogen atoms are dissolved in the film, and the dissolved hydrogen atoms are diffused from the high pressure side to the low pressure side. In addition, it has a function of converting hydrogen atoms into hydrogen molecules again and discharging them on the low pressure side film surface.
- the content of the Group 11 element is less than 20 mol%, the strength of the alloy tends to be insufficient or the function tends to be difficult to develop, and when it exceeds 65 mol%, the hydrogen permeation rate decreases. There is a tendency.
- the hydrogen discharge membrane has a hydrogen permeability coefficient at 50 ° C. of 1.0 ⁇ 10 ⁇ 13 to 2.0 ⁇ 10 ⁇ 9 (mol ⁇ m ⁇ 1 ⁇ sec ⁇ 1 ⁇ Pa ⁇ 1/2 ), and the membrane It is preferable that the thickness t and the film area s satisfy the following formula 1. ⁇ Formula 1> t / s ⁇ 32.9 m ⁇ 1
- the hydrogen discharge membrane provided in the electrochemical device has a hydrogen permeation amount of 10 ml / day or more (4.03 ⁇ 10 ⁇ 4 mol / day or more) at a square root of pressure of 76.81 Pa 1/2 (0.059 bar): according to SATP. (The volume of 1 mol ideal gas at a temperature of 25 ° C.
- the hydrogen discharge membrane in which the content of the Group 11 element in the Pd—Group 11 element alloy of the present invention is 20 to 65 mol% has a hydrogen permeability coefficient at 50 ° C. of 1.0 ⁇ 10 ⁇ 13 to 2.0 ⁇ . 10 ⁇ 9 (mol ⁇ m ⁇ 1 ⁇ sec ⁇ 1 ⁇ Pa ⁇ 1/2 ).
- the hydrogen permeation coefficient is obtained by the following equation 2.
- Hydrogen permeability coefficient (number of moles of hydrogen ⁇ film thickness t) / (membrane area s ⁇ time ⁇ square root of pressure)
- the hydrogen permeation rate is 10 ml / day (4.03 ⁇ 10 ⁇ 4 mol / day) and the hydrogen permeation coefficient is 2.0 ⁇ 10 ⁇ 9 (mol ⁇ m ⁇ 1 ⁇ sec ⁇ 1 ⁇ Pa ⁇ 1/2 )
- the condition for the hydrogen permeation amount to be 10 ml / day or more (4.03 ⁇ 10 ⁇ 4 mol / day or more) is film thickness t / film area s ⁇ 32.9 m ⁇ 1 .
- the hydrogen discharge laminated film of the present invention has a support on one side or both sides of the hydrogen discharge film.
- the support is provided to prevent the hydrogen discharge membrane from falling into the electrochemical element when it falls off the safety valve.
- the hydrogen discharge membrane needs to have a function as a safety valve that self-destructs when the internal pressure of the electrochemical element becomes a predetermined value or more.
- the mechanical strength of the hydrogen discharge film is low, so that the internal pressure of the electrochemical element may be destroyed before reaching a predetermined value, and the function as a safety valve cannot be performed. Therefore, when the hydrogen discharge film is a thin film, it is preferable to stack a support on one side or both sides of the hydrogen discharge film in order to improve mechanical strength.
- the support is preferably a porous body having an average pore diameter of 100 ⁇ m or less.
- the average pore diameter exceeds 100 ⁇ m, the surface smoothness of the porous body is lowered, so that it is difficult to form a hydrogen discharge film having a uniform thickness on the porous body when a hydrogen discharge film is produced by sputtering or the like. Or pinholes or cracks are likely to occur in the hydrogen discharge film.
- the support is preferably formed of at least one polymer selected from the group consisting of polytetrafluoroethylene, polysulfone, polyimide, polyamideimide, and aramid from the viewpoint of being chemically and thermally stable.
- the present invention also relates to a safety valve for an electrochemical device provided with the hydrogen discharge film or the hydrogen discharge laminated film, and an electrochemical device having the safety valve.
- the electrochemical element include an aluminum electrolytic capacitor and a lithium ion battery.
- the hydrogen discharge film and the hydrogen discharge laminated film of the present invention are characterized by high reliability as a safety valve without causing defects such as cracks before the internal pressure of the electrochemical element reaches a predetermined pressure.
- the hydrogen discharge film and the hydrogen discharge laminated film of the present invention can not only quickly discharge only hydrogen gas generated inside the electrochemical element, but also prevent impurities from entering the electrochemical element from the outside. Can be prevented.
- the safety valve equipped with the hydrogen discharge membrane and the hydrogen discharge laminated film of the present invention self-destructs and reduces the internal pressure when the internal pressure of the electrochemical device suddenly increases, thereby preventing the electrochemical device itself from bursting. can do. By these effects, the performance of the electrochemical element can be maintained for a long time, and the lifetime of the electrochemical element can be extended.
- An alloy containing Pd as an essential metal is used as a raw material for the hydrogen discharge film of the present invention.
- the other metal forming the alloy is not particularly limited, but it is preferable to use a Group 11 element from the viewpoint of easily adjusting the crystal grain size of the alloy to 0.028 ⁇ m or more, more preferably gold, silver, And at least one selected from the group consisting of copper, and more preferably silver or copper.
- the alloy preferably contains 20 to 65 mol% of a Group 11 element, more preferably 30 to 65 mol%, and still more preferably 30 to 60 mol%.
- a hydrogen discharge film using a Pd—Ag alloy having an Ag content of 20 mol% or more, a Pd—Cu alloy having a Cu content of 30 mol% or more, or a Pd—Au alloy having an Au content of 20 mol% or more By forming the film, the hydrogen discharge film becomes difficult to become brittle even in a low temperature range of about 50 to 60 ° C. or less.
- the said alloy may contain the metal of IB group and / or IIIA in the range which does not impair the effect of this invention.
- the crystal grain size of the alloy is 0.028 ⁇ m or more, preferably 0.04 ⁇ m or more, more preferably 0.1 ⁇ m or more, and further preferably 0.4 ⁇ m or more.
- the upper limit value of the crystal grain size is not particularly limited, but when the internal pressure of the electrochemical device suddenly increases, From the viewpoint of breaking down and lowering the internal pressure, the size of the crystal grains is preferably 1000 ⁇ m or less, and more preferably 600 ⁇ m or less.
- the hydrogen discharge film of the present invention can be produced by, for example, a rolling method, a sputtering method, a vacuum evaporation method, an ion plating method, a plating method, etc. It is preferable to use a rolling method, and when manufacturing a thin hydrogen discharge film, it is preferable to use a sputtering method.
- the size of the crystal grains can be adjusted to a desired size by adjusting the temperature at the time of producing a hydrogen discharge film, for example.
- the temperature at which the hydrogen discharging film having a crystal grain size of 0.028 ⁇ m or more is usually 50 ° C. to a temperature at which the alloy melts, preferably 50 ° C. to 500 ° C., more preferably 100 ° C. to 400 ° C.
- the rolling method by rolling at the above temperature, in the case of the sputtering method, the substrate for forming the sputtered film is heated to the above temperature, so that the hydrogen discharge film having crystal grains of a desired size is obtained. Can be produced.
- the size of the crystal grains can be adjusted by heating and cooling the hydrogen discharge film again. Further, when the hydrogen exhaust film is heated and then cooled to the ambient temperature (usually about room temperature), the crystal grains can be enlarged by slowly cooling instead of quenching. Further, by slow cooling, the crystal growth rate of the entire film is made uniform, so that the surface of the hydrogen discharge film becomes smooth. As a result, stress concentration at the interface between crystal grains is suppressed, so that cracks and the like are less likely to occur in the hydrogen discharge film.
- the size of the crystal grains can be adjusted by increasing the pressure of the press or rolling roll when producing the hydrogen discharge film, or by pressing the produced hydrogen discharge film at a high pressure or passing it through a high-pressure rolling roll. Is possible.
- the surface of the hydrogen discharge film becomes smooth by applying a high pressure. As a result, stress concentration at the interface between crystal grains is suppressed, so that cracks and the like are less likely to occur in the hydrogen discharge film.
- the rolling method may be hot rolling or any method of cold rolling.
- the rolling method is a method in which a pair or a plurality of pairs of rolls (rollers) are rotated, and a Pd alloy that is a raw material is passed between the rolls while being applied with pressure to form a film.
- the film thickness of the hydrogen discharge film obtained by the rolling method is preferably 5 to 50 ⁇ m, more preferably 10 to 30 ⁇ m.
- the film thickness is less than 5 ⁇ m, pinholes or cracks are likely to occur during production, or deformation occurs when hydrogen is occluded.
- the film thickness exceeds 50 ⁇ m, it takes time to allow hydrogen to permeate, so that the hydrogen discharge performance is lowered or the cost is inferior.
- the sputtering method is not particularly limited, and can be performed using a sputtering apparatus such as a parallel plate type, a single wafer type, a passing type, DC sputtering, and RF sputtering.
- a sputtering apparatus such as a parallel plate type, a single wafer type, a passing type, DC sputtering, and RF sputtering.
- the inside of the sputtering apparatus is evacuated, the Ar gas pressure is adjusted to a predetermined value, and a predetermined sputtering current is supplied to the Pd—Ag alloy target.
- a Pd—Ag alloy film is formed on the substrate.
- the Pd—Ag alloy film is peeled from the substrate to obtain a hydrogen discharge film.
- a target a single target or a plurality of targets can be used depending on a hydrogen discharge film to be manufactured.
- Examples of the substrate include glass plates, ceramic plates, silicon wafers, metal plates such as aluminum and stainless steel.
- the film thickness of the hydrogen discharge film obtained by sputtering is preferably 0.01 to 5 ⁇ m, more preferably 0.05 to 2 ⁇ m.
- the film thickness is less than 0.01 ⁇ m, not only pinholes may be formed, but it is difficult to obtain the required mechanical strength. Moreover, it is easy to break when peeling from the substrate, and handling after peeling becomes difficult.
- the film thickness exceeds 5 ⁇ m, it takes time to produce a hydrogen discharge film, which is not preferable because of inferior cost.
- the membrane area of the hydrogen discharge membrane can be appropriately adjusted in consideration of the amount of hydrogen permeation and the thickness, but is about 0.01 to 100 mm 2 when used as a constituent member of a safety valve.
- the film area is an area of a hydrogen discharge film where hydrogen is actually discharged, and does not include a portion where a ring-shaped adhesive described later is applied.
- FIG. 1 and 2 are schematic cross-sectional views showing the structure of the hydrogen discharge laminated film 1 of the present invention.
- a support 4 may be laminated on one or both sides of the hydrogen discharge membrane 2 using a ring-shaped adhesive 3, and FIG. 2 (a) or (b ), The support 4 may be laminated on one side or both sides of the hydrogen discharge film 2 using the jig 5.
- the support 4 is not particularly limited as long as it is hydrogen permeable and can support the hydrogen discharge membrane 2, and may be a non-porous material or a porous material.
- the support 4 may be a woven fabric or a non-woven fabric.
- the material for forming the support 4 include polyolefins such as polyethylene and polypropylene, polyesters such as polyethylene terephthalate and polyethylene naphthalate, polyaryl ether sulfones such as polysulfone and polyethersulfone, polytetrafluoroethylene, and polyvinylidene fluoride.
- Fluorine resin, epoxy resin, polyamide, polyimide, polyamideimide, aramid and the like can be mentioned. Among these, at least one selected from the group consisting of chemically and thermally stable polytetrafluoroethylene, polysulfone, polyimide, polyamideimide, and aramid is preferably used.
- the thickness of the support 4 is not particularly limited, but is usually about 5 to 1000 ⁇ m, preferably 10 to 300 ⁇ m.
- the hydrogen discharge film 2 When the hydrogen discharge film 2 is manufactured by the sputtering method, if the support 4 is used as a substrate, the hydrogen discharge film 2 can be directly formed on the support 4, and the hydrogen discharge film 2 can be formed without using the adhesive 3 or the jig 5. Since the discharge
- the support 4 is preferably a porous body having an average pore diameter of 100 ⁇ m or less, more preferably a porous body having an average pore diameter of 5 ⁇ m or less, and particularly an ultrafiltration membrane (UF membrane). preferable.
- UF membrane ultrafiltration membrane
- the shape of the hydrogen discharge film and the hydrogen discharge laminated film of the present invention may be a substantially circular shape or a polygon such as a triangle, a quadrangle, or a pentagon. It can be made into arbitrary shapes according to the use mentioned later.
- the hydrogen discharge film and the hydrogen discharge laminated film of the present invention are particularly useful as a constituent member of a safety valve of an aluminum electrolytic capacitor or a lithium ion battery. Further, the hydrogen discharge film and the hydrogen discharge laminated film of the present invention can be provided in the electrochemical element as a hydrogen discharge valve separately from the safety valve.
- Example 1 [Production of hydrogen discharge film by rolling method (Ag content: 20 mol%)] Pd and Ag raw materials were respectively weighed so that the Ag content in the ingot was 20 mol%, put into an arc melting furnace equipped with a water-cooled copper crucible, and arc-melted in an atmospheric pressure Ar gas atmosphere.
- the obtained button ingot was cold-rolled to a thickness of 5 mm using a two-high rolling mill having a roll diameter of 100 mm to obtain a plate material. Then, the rolled plate material was put in the glass tube, and both ends of the glass tube were sealed. The inside of the glass tube was depressurized to 5 ⁇ 10 ⁇ 4 Pa at room temperature, then heated to 700 ° C.
- the plate material is cold-rolled to a thickness of 100 ⁇ m using a two-high rolling mill with a roll diameter of 100 mm, and further, the plate material is cold-rolled to a thickness of 25 ⁇ m using a two-high rolling mill with a roll diameter of 20 mm. did. Then, the rolled plate material was put in the glass tube, and both ends of the glass tube were sealed. The inside of the glass tube was depressurized to 5 ⁇ 10 ⁇ 4 Pa at room temperature, then heated to 700 ° C. and allowed to stand for 1 hour, and then cooled to room temperature. By this heat treatment, strain inside the Pd—Ag alloy generated by rolling was removed, and a Pd—Ag hydrogen discharge film having a thickness t: 25 ⁇ m and an Ag content of 20 mol% was produced.
- Example 2 [Production of hydrogen discharge film by rolling method (Ag content 22 mol%)] A Pd—Ag hydrogen discharge membrane having a thickness t of 25 ⁇ m and an Ag content of 22 mol% was obtained in the same manner as in Example 1 except that Pd and Ag raw materials were used so that the Ag content in the ingot was 22 mol%. Produced.
- Example 3 [Production of hydrogen discharge film by rolling method (Ag content 60 mol%)] A Pd—Ag hydrogen discharge membrane having a thickness t of 25 ⁇ m and an Ag content of 60 mol% was obtained in the same manner as in Example 1 except that Pd and Ag raw materials were used so that the Ag content in the ingot was 60 mol%. Produced.
- Example 4 [Production of hydrogen discharge film by rolling method (Ag content: 19.8 mol%)] Pd—Ag having a thickness t of 25 ⁇ m and an Ag content of 19.8 mol% was used in the same manner as in Example 1 except that Pd and Ag raw materials were used so that the Ag content in the ingot was 19.8 mol%. A hydrogen discharge membrane was prepared.
- Example 5 [Fabrication of hydrogen discharge laminated film by sputtering method (Ag content 20 mol%)]
- a polysulfone porous sheet (manufactured by Nitto Denko Corporation, pore size: 0.001 to 0.02 ⁇ m) is mounted on an RF magnetron sputtering apparatus (manufactured by Sanyu Electronics Co., Ltd.) equipped with a Pd—Ag alloy target having an Ag content of 20 mol%. ) was attached. Thereafter, the inside of the sputtering apparatus was evacuated to 1 ⁇ 10 ⁇ 5 Pa or less, and a sputter current of 4.8 A was applied to the Pd—Ag alloy target at 300 ° C. and an Ar gas pressure of 1.0 Pa. A Pd—Ag alloy film (Ag content 20 mol%) having a thickness t: 400 nm was formed thereon to produce a hydrogen discharge laminated film.
- Example 6 [Fabrication of hydrogen discharge laminated film by sputtering method (Ag content: 19.8 mol%)] A Pd—Ag alloy film (Ag content 19.8 mol%) having a thickness t of 400 nm was formed in the same manner as in Example 5 except that a Pd—Ag alloy target having an Ag content of 19.8 mol% was used. Thus, a hydrogen discharge laminated film was produced.
- Example 7 Provide of hydrogen-discharge laminated film by sputtering method (Cu content 53 mol%)] Except for using a Pd—Cu alloy target having a Cu content of 53 mol%, a Pd—Cu alloy film (Cu content: 53 mol%) having a thickness of t: 400 nm was formed in the same manner as in Example 5 to discharge hydrogen. A laminated film was produced.
- Example 8 [Fabrication of hydrogen discharge laminated film by sputtering method (Au content 20 mol%)] Except for using a Pd—Au alloy target having an Au content of 20 mol%, a Pd—Au alloy film (Au content 20 mol%) having a thickness t: 400 nm was formed in the same manner as in Example 5 to discharge hydrogen. A laminated film was produced.
- Example 9 [Production of hydrogen discharge film by rolling method (Au content: 30 mol%)] A Pd—Au hydrogen discharge film having a thickness t of 25 ⁇ m and an Au content of 30 mol% was obtained in the same manner as in Example 1 except that Pd and Au raw materials were used so that the Au content in the ingot was 30 mol%. Produced.
- Example 10 [Production of hydrogen discharge film by rolling method (Au content 40 mol%)] A Pd—Au hydrogen discharge film having a thickness t of 25 ⁇ m and an Au content of 40 mol% was obtained in the same manner as in Example 1 except that Pd and Au raw materials were used so that the Au content in the ingot was 40 mol%. Produced.
- Example 11 Production of hydrogen-discharge laminated film by sputtering method (Au content: 30 mol%)] Except for using a Pd—Au alloy target with an Au content of 30 mol%, a Pd—Au alloy film (Au content 30 mol%) with a thickness t: 400 nm was formed in the same manner as in Example 5 to discharge hydrogen. A laminated film was produced.
- Example 12 [Fabrication of hydrogen discharge laminated film by sputtering method (Au content 40 mol%)] Except for using a Pd—Au alloy target having an Au content of 40 mol%, a Pd—Au alloy film (Au content: 40 mol%) having a thickness of t: 400 nm was formed in the same manner as in Example 5 to discharge hydrogen. A laminated film was produced.
- Comparative Example 1 [Fabrication of hydrogen discharge laminated film by sputtering method (Ag content: 19.8 mol%)]
- a Pd—Ag alloy film having a thickness of t: 400 nm (Ag) was used in the same manner as in Example 5 except that a Pd—Ag alloy target having an Ag content of 19.8 mol% was used and the sputtering temperature was 25 ° C. The content was 19.8 mol%) to form a hydrogen discharge laminated film.
- Comparative Example 2 [Fabrication of hydrogen discharge laminated film by sputtering method (Ag content 20 mol%)] A Pd—Ag alloy film (Ag content 20 mol%) having a thickness t: 400 nm was formed in the same manner as in Example 5 except that the temperature during sputtering was 25 ° C., to produce a hydrogen discharge laminated film.
- the bright part in a binarized image was made into the crystal grain, and the crystal grain which overlaps with the outer edge of a rectangular analysis range (3 mm x 2 mm) was excluded from the analysis object. Further, in the binarized image, when there was a gap inside the crystal grains that were gathered, the process of filling the gap was not performed. Moreover, the process which isolate
- the equivalent circle diameter determined by the above operation was defined as the crystal grain size (crystal grain size).
- the bright part in a binarized image was made into the crystal grain, and the crystal grain which overlaps with the outer edge of a rectangular analysis range (1.5 micrometers x 1 micrometer) was excluded from the analysis object. Further, in the binarized image, when there was a gap inside the crystal grains that were gathered, the process of filling the gap was not performed. Moreover, the process which isolate
- the equivalent circle diameter determined by the above operation was defined as the crystal grain size (crystal grain size).
- the effective film area s of the hydrogen discharge film used for the measurement is 3.85 ⁇ 10 ⁇ 5 m 2
- the effective film area s of the hydrogen discharge stacked film is 7.07 ⁇ 10 ⁇ 6 m 2 .
- Hydrogen permeability coefficient (number of moles of hydrogen ⁇ film thickness t) / (membrane area s ⁇ time ⁇ square root of pressure)
- the hydrogen discharge film and the hydrogen discharge laminated film of the present invention are suitably used as components of safety valves provided in electrochemical elements such as batteries, capacitors, capacitors, and sensors.
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Abstract
Description
〈式1〉
t/s<32.9m-1
電気化学素子に設けられる水素排出膜は、圧力の平方根が76.81Pa1/2(0.059bar)における水素透過量が10ml/day以上(4.03×10-4mol/day以上:SATPに従い計算(温度25℃、気圧1barにおける1molの理想気体の体積は24.8L))であることが求められる。本発明のPd-第11族元素合金中の第11族元素の含有量が20~65mol%である水素排出膜は、50℃における水素透過係数が1.0×10-13~2.0×10-9(mol・m-1・sec-1・Pa-1/2)である。ここで、水素透過係数は下記式2により求められる。
〈式2〉水素透過係数=(水素モル数×膜厚t)/(膜面積s×時間×圧力の平方根)
水素透過量が10ml/day(4.03×10-4mol/day)かつ水素透過係数が2.0×10-9(mol・m-1・sec-1・Pa-1/2)の場合、式2に各数値を代入すると以下のとおりである。
2.0×10-9=(4.03×10-4×膜厚t)/(膜面積s×86400×76.81)
2.0×10-9=6.08×10-11×膜厚t/膜面積s
膜厚t/膜面積s=32.9m-1
したがって、50℃における水素透過係数が1.0×10-13~2.0×10-9(mol・m-1・sec-1・Pa-1/2)の水素透過膜を用いる場合において、水素透過量が10ml/day以上(4.03×10-4mol/day以上)となる条件は、膜厚t/膜面積s<32.9m-1である。
〔圧延法による水素排出膜(Ag含有量20mol%)の作製〕
インゴット中のAg含有量が20mol%となるようにPd及びAg原料をそれぞれ秤量し、水冷銅坩堝を備えたアーク溶解炉に投入し、大気圧のArガス雰囲気中でアーク溶解した。得られたボタンインゴットをロール径100mmの2段圧延機を用いて厚さ5mmになるまで冷間圧延して板材を得た。その後、ガラス管の中に圧延した板材を入れ、ガラス管の両端を封止した。ガラス管内部を室温で5×10-4Paまで減圧し、その後700℃まで昇温して24時間放置し、その後室温まで冷却した。この熱処理により、合金中のPd及びAgの偏析を解消した。次に、ロール径100mmの2段圧延機を用いて板材を厚さ100μmになるまで冷間圧延し、さらにロール径20mmの2段圧延機を用いて板材を厚さ25μmになるまで冷間圧延した。その後、ガラス管の中に圧延した板材を入れ、ガラス管の両端を封止した。ガラス管内部を室温で5×10-4Paまで減圧し、その後700℃まで昇温して1時間放置し、その後室温まで冷却した。この熱処理により、圧延によって生じたPd-Ag合金内部のひずみを除去し、厚さt:25μm、Ag含有量20mol%のPd-Ag水素排出膜を作製した。
〔圧延法による水素排出膜(Ag含有量22mol%)の作製〕
インゴット中のAg含有量が22mol%となるようにPd及びAg原料をそれぞれ使用した以外は実施例1と同様の方法で厚さt:25μm、Ag含有量22mol%のPd-Ag水素排出膜を作製した。
〔圧延法による水素排出膜(Ag含有量60mol%)の作製〕
インゴット中のAg含有量が60mol%となるようにPd及びAg原料をそれぞれ使用した以外は実施例1と同様の方法で厚さt:25μm、Ag含有量60mol%のPd-Ag水素排出膜を作製した。
〔圧延法による水素排出膜(Ag含有量19.8mol%)の作製〕
インゴット中のAg含有量が19.8mol%となるようにPd及びAg原料をそれぞれ使用した以外は実施例1と同様の方法で厚さt:25μm、Ag含有量19.8mol%のPd-Ag水素排出膜を作製した。
〔スパッタリング法による水素排出積層膜(Ag含有量20mol%)の作製〕
Ag含有量が20mol%であるPd-Ag合金ターゲットを装着したRFマグネトロンスパッタリング装置(サンユー電子社製)に、支持体であるポリスルホン多孔質シート(日東電工社製、孔径0.001~0.02μm)を取り付けた。その後、スパッタリング装置内を1×10-5Pa以下に真空排気し、300℃、Arガス圧1.0Paにおいて、Pd-Ag合金ターゲットに4.8Aのスパッタ電流を投入して、ポリスルホン多孔質シート上に厚さt:400nmのPd-Ag合金膜(Ag含有量20mol%)を形成して水素排出積層膜を作製した。
〔スパッタリング法による水素排出積層膜(Ag含有量19.8mol%)の作製〕
Ag含有量が19.8mol%であるPd-Ag合金ターゲットを用いた以外は実施例5と同様の方法で厚さt:400nmのPd-Ag合金膜(Ag含有量19.8mol%)を形成して水素排出積層膜を作製した。
〔スパッタリング法による水素排出積層膜(Cu含有量53mol%)の作製〕
Cu含有量が53mol%であるPd-Cu合金ターゲットを用いた以外は実施例5と同様の方法で厚さt:400nmのPd-Cu合金膜(Cu含有量53mol%)を形成して水素排出積層膜を作製した。
〔スパッタリング法による水素排出積層膜(Au含有量20mol%)の作製〕
Au含有量が20mol%であるPd-Au合金ターゲットを用いた以外は実施例5と同様の方法で厚さt:400nmのPd-Au合金膜(Au含有量20mol%)を形成して水素排出積層膜を作製した。
〔圧延法による水素排出膜(Au含有量30mol%)の作製〕
インゴット中のAu含有量が30mol%となるようにPd及びAu原料をそれぞれ使用した以外は実施例1と同様の方法で厚さt:25μm、Au含有量30mol%のPd-Au水素排出膜を作製した。
〔圧延法による水素排出膜(Au含有量40mol%)の作製〕
インゴット中のAu含有量が40mol%となるようにPd及びAu原料をそれぞれ使用した以外は実施例1と同様の方法で厚さt:25μm、Au含有量40mol%のPd-Au水素排出膜を作製した。
〔スパッタリング法による水素排出積層膜(Au含有量30mol%)の作製〕
Au含有量が30mol%であるPd-Au合金ターゲットを用いた以外は実施例5と同様の方法で厚さt:400nmのPd-Au合金膜(Au含有量30mol%)を形成して水素排出積層膜を作製した。
〔スパッタリング法による水素排出積層膜(Au含有量40mol%)の作製〕
Au含有量が40mol%であるPd-Au合金ターゲットを用いた以外は実施例5と同様の方法で厚さt:400nmのPd-Au合金膜(Au含有量40mol%)を形成して水素排出積層膜を作製した。
〔スパッタリング法による水素排出積層膜(Ag含有量19.8mol%)の作製〕
Ag含有量が19.8mol%であるPd-Ag合金ターゲットを用い、スパッタ時の温度を25℃にした以外は実施例5と同様の方法で厚さt:400nmのPd-Ag合金膜(Ag含有量19.8mol%)を形成して水素排出積層膜を作製した。
〔スパッタリング法による水素排出積層膜(Ag含有量20mol%)の作製〕
スパッタ時の温度を25℃にした以外は実施例5と同様の方法で厚さt:400nmのPd-Ag合金膜(Ag含有量20mol%)を形成して水素排出積層膜を作製した。
(水素排出膜の結晶粒の大きさの測定)
作製した水素排出膜の表面を光学顕微鏡(株式会社ニコン製、ECLIPSE ME600)を用いて倍率50倍で撮影した。そして、画像解析ソフトウェア(アメリカ国立衛生研究所[NIH]オープンソース、「Image J」)を用いて撮影画像の2値化を行った。2値化においては、結晶粒が明部で表示されるようにした。その後、明るさ及びコントラストを補正することにより結晶粒を際立たせ、閾値設定によって結晶粒のみを選択して2値化画像を得た。次に、得られた2値化画像を画像解析ソフトウェア(旭化成エンジニア社製、「A像くん」)を用いて解析した。なお、2値化画像における明部を結晶粒とし、矩形状の解析範囲(3mm×2mm)の外縁辺と重なる結晶粒は解析対象から除外した。また、2値化画像において、寄り集まっている結晶粒の内側に空隙がある場合に、空隙を埋める処理は行わなかった。また、2値化画像において、互いに接触している結晶粒を分離させる処理は行わなかった。上記操作で求めた円相当径を結晶粒径(結晶粒の大きさ)とした。
作製した水素排出積層膜の表面を走査電子顕微鏡(日立ハイテク株式会社製、S-3000N)を用いて倍率10万倍で撮影した。そして、画像解析ソフトウェア(アメリカ国立衛生研究所[NIH]オープンソース、「Image J」)を用いて撮影画像の2値化を行った。2値化においては、結晶粒が明部で表示されるようにした。その後、明るさ及びコントラストを補正することにより結晶粒を際立たせ、閾値設定によって結晶粒のみを選択して2値化画像を得た。次に、得られた2値化画像を画像解析ソフトウェア(旭化成エンジニア社製、「A像くん」)を用いて解析した。なお、2値化画像における明部を結晶粒とし、矩形状の解析範囲(1.5μm×1μm)の外縁辺と重なる結晶粒は解析対象から除外した。また、2値化画像において、寄り集まっている結晶粒の内側に空隙がある場合に、空隙を埋める処理は行わなかった。また、2値化画像において、互いに接触している結晶粒を分離させる処理は行わなかった。上記操作で求めた円相当径を結晶粒径(結晶粒の大きさ)とした。
作製した水素排出膜又は水素排出積層膜をスウェージロック社製のVCRコネクターに取り付け、片側にSUSチューブを取り付け、密封された空間(63.5ml)を作製した。チューブ内を真空ポンプで減圧後、水素ガスの圧力が0.15MPaになるように調整し、50℃の環境下での圧力変化をモニターした。圧力変化により水素排出膜を透過した水素モル数がわかるため、これを下記式2に代入して水素透過係数を算出した。なお、測定に用いた水素排出膜の有効膜面積sは3.85×10-5m2であり、水素排出積層膜の有効膜面積sは7.07×10-6m2である。
〈式2〉水素透過係数=(水素モル数×膜厚t)/(膜面積s×時間×圧力の平方根)
作製した水素排出膜又は水素排出積層膜を両面粘着テープ(日東電工株式会社製、No.5615)で水素タンクに貼り付けて固定した。その後、水素タンクの水素分圧が0.05MPaになるように調整し、50℃の環境下で12時間放置した。その後、水素排出膜の状態を確認し、下記基準で評価した。
◎:顕微鏡(100倍)で観察したが、全く変化なし。
〇:顕微鏡(100倍)で観察したところ、亀裂が少しあった。
×:粉々に壊れていた。
ガラス管の中に作製した水素排出膜を入れ、ガラス管の両端を封止した。ガラス管内部を50℃で5×10-3Paまで減圧し、その後、400℃まで昇温した。その後、ガラス管内に水素ガスを導入し、105kPaの雰囲気下で1時間放置した。その後、ガラス管内を室温まで冷却し、ガラス管内を5×10-3Paまで真空排気(30分)した。その後、再びガラス管内に水素ガスを導入し、105kPaの雰囲気下で1時間放置した。上記操作を3回繰り返した後、水素排出膜をガラス管内から取り出し、水素排出膜の外観を目視にて観察し、下記基準で評価した。
〇:歪などの外観変化なし
×:歪などの外観変化あり
ガラス管の中に作製した水素排出積層膜を入れ、ガラス管の両端を封止した。ガラス管内部を50℃で5×10-3Paまで減圧した後、ガラス管内に水素ガスを導入し、105kPaの雰囲気下で1時間放置した。その後、水素排出積層膜をガラス管内から取り出し、表面をSEMで観察し、下記基準で評価した。
〇:クラックなし
×:クラックあり
2:水素排出膜
3:接着剤
4:支持体
5:治具
Claims (10)
- Pdを必須金属とする合金を含む水素排出膜において、前記合金の結晶粒の大きさが0.028μm以上であることを特徴とする水素排出膜。
- 前記合金は、第11族元素を20~65mol%含む請求項1記載の水素排出膜。
- 前記第11族元素は、金、銀、及び銅からなる群より選択される少なくとも1種である請求項2記載の水素排出膜。
- 50℃における水素透過係数が1.0×10-13~2.0×10-9(mol・m-1・sec-1・Pa-1/2)であり、かつ膜厚tと膜面積sが下記式1を満たす請求項2又は3記載の水素排出膜。
〈式1〉
t/s<32.9m-1 - 請求項1~4のいずれかに記載の水素排出膜の片面又は両面に支持体を有する水素排出積層膜。
- 前記支持体は、平均孔径100μm以下の多孔質体である請求項5記載の水素排出積層膜。
- 前記支持体の原料が、ポリテトラフルオロエチレン、ポリスルホン、ポリイミド、ポリアミドイミド、及びアラミドからなる群より選択される少なくとも1種である請求項5又は6記載の水素排出積層膜。
- 請求項1~4のいずれかに記載の水素排出膜、又は請求項5~7のいずれかに記載の水素排出積層膜を備えた電気化学素子用安全弁。
- 請求項8記載の安全弁を備えた電気化学素子。
- 前記電気化学素子が、アルミ電解コンデンサ又はリチウムイオン電池である請求項9記載の電気化学素子。
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US15/318,845 US20170133646A1 (en) | 2014-06-16 | 2015-06-12 | Hydrogen-releasing film |
CN201580032747.8A CN107077974A (zh) | 2014-06-16 | 2015-06-12 | 氢气排出膜 |
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