WO2015190046A1 - 太陽電池モジュール - Google Patents

太陽電池モジュール Download PDF

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Publication number
WO2015190046A1
WO2015190046A1 PCT/JP2015/002621 JP2015002621W WO2015190046A1 WO 2015190046 A1 WO2015190046 A1 WO 2015190046A1 JP 2015002621 W JP2015002621 W JP 2015002621W WO 2015190046 A1 WO2015190046 A1 WO 2015190046A1
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WO
WIPO (PCT)
Prior art keywords
solar cell
sealing layer
resin
layer
wavelength
Prior art date
Application number
PCT/JP2015/002621
Other languages
English (en)
French (fr)
Inventor
祐 石黒
直人 今田
淳平 入川
朗通 前川
Original Assignee
パナソニックＩｐマネジメント株式会社
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Filing date
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Application filed by パナソニックＩｐマネジメント株式会社 filed Critical パナソニックＩｐマネジメント株式会社
Priority to EP15806594.6A priority Critical patent/EP3157066A4/en
Priority to JP2016527622A priority patent/JP6628047B2/ja
Publication of WO2015190046A1 publication Critical patent/WO2015190046A1/ja
Priority to US15/374,291 priority patent/US10224448B2/en
Priority to US16/249,000 priority patent/US20190148578A1/en

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    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
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Definitions

  • This disclosure relates to a solar cell module.
  • a solar cell module including a wavelength conversion material that absorbs light of a specific wavelength and converts the wavelength is known. According to such a solar cell module, it is possible to convert light in a wavelength region that has a small contribution to power generation out of incident light into light in a wavelength region that has a large contribution to power generation.
  • patent document 1 is disclosing the solar cell module which has arrange
  • the solar cell module since a lot of light enters from the light receiving surface side, it is preferable to arrange a wavelength conversion substance on the light receiving surface side of the solar cell from the viewpoint of improving the wavelength conversion efficiency.
  • the wavelength conversion material may diffuse to the back side of the solar cell, and the concentration of the wavelength conversion material on the light receiving surface side may decrease.
  • One aspect of the solar cell module according to the present disclosure includes a solar cell, a first protective member provided on the light receiving surface side of the solar cell, a second protective member provided on the back surface side of the solar cell, and a solar cell.
  • a first sealing layer disposed between the first protective members, and a second sealing layer disposed between the solar cell and the second protective member, and a sealing layer for sealing the solar cell, and at least A wavelength converting substance that absorbs light of a specific wavelength and converts the wavelength, which is contained in the first sealing layer, and the concentration of the wavelength converting substance is higher than that of the second sealing layer.
  • the resin constituting the second sealing layer has a smaller diffusion coefficient of the wavelength converting substance than the resin constituting the first sealing layer.
  • One aspect of the solar cell module according to the present disclosure is composed of a material having a smaller diffusion coefficient of the wavelength conversion substance than the resin constituting the first sealing layer between the first sealing layer and the second sealing layer.
  • a diffusion suppression layer is provided.
  • the solar cell module it is possible to prevent the wavelength conversion substance disposed on the light receiving surface side of the solar cell from diffusing to the back surface side of the solar cell.
  • the “light receiving surface” of a solar cell module, a solar cell, or a photoelectric conversion unit means a surface on which light is mainly incident (over 50% to 100% of light is incident from the light receiving surface).
  • the “back surface” means the surface opposite to the light receiving surface.
  • descriptions such as “providing the second member on the first member” do not intend only when the first and second members are provided in direct contact unless specifically limited. That is, this description includes a case where another member exists between the first and second members.
  • the description of “substantially **” is intended to include not only exactly the same, but also those that are recognized as being substantially the same, with “substantially identical” as an example.
  • Drawing 1 is a sectional view of solar cell module 10 which is an example of an embodiment.
  • the solar cell module 10 includes a solar cell 11, a first protection member 12 provided on the light receiving surface side of the solar cell 11, and a second protection member provided on the back surface side of the solar cell 11. 13 and a sealing layer 14 that seals the solar cell 11.
  • the sealing layer 14 includes a sealing layer 14 a (first sealing layer) disposed between the solar cell 11 and the first protective member 12, and a seal disposed between the solar cell 11 and the second protective member 13.
  • a stop layer 14b second sealing layer).
  • the solar cell module 10 includes at least a wavelength conversion substance 30 contained in the sealing layer 14a (see FIG. 2 and the like described later).
  • the wavelength converting material 30 is a material that absorbs light of a specific wavelength and converts the wavelength, and plays a role of converting light in a wavelength region that has a small contribution to power generation into light in a wavelength region that has a large contribution to power generation.
  • the plurality of solar cells 11 are arranged on substantially the same plane. Adjacent solar cells 11 are connected in series by a wiring member 15, whereby a string of solar cells 11 is formed.
  • the wiring member 15 is bent in the thickness direction of the module between adjacent solar cells 11, and an adhesive or the like is used for the light receiving surface side electrode of one solar cell 11 and the back surface side electrode of the other solar cell 11. Can be attached respectively.
  • the solar cell 11, the first protective member 12, the second protective member 13, and the sealing layer 14 constitute a solar cell panel 16.
  • the solar cell panel 16 is a plate-like body in which the string of the solar cells 11 is sandwiched between the protective members, and has, for example, a substantially rectangular shape in a plan view (when viewed from a direction perpendicular to the light receiving surface).
  • a frame 17 is preferably attached to the edge of the solar cell panel 16. The frame 17 protects the edge of the solar cell panel 16 and is used when the solar cell module 10 is installed on a roof or the like.
  • the solar cell 11 includes a photoelectric conversion unit that generates carriers by receiving light.
  • the solar cell 11 has a light receiving surface electrode formed on the light receiving surface of the photoelectric conversion unit and a back electrode formed on the back surface as electrodes for collecting the carriers generated by the photoelectric conversion unit.
  • the structure of the solar cell 11 is not limited thereto, and may be a structure in which electrodes are formed only on the back surface of the photoelectric conversion unit, for example.
  • the back electrode is preferably formed in a larger area than the light receiving surface electrode, and the surface having the larger electrode area (or the surface on which the electrode is formed) can be said to be the “back surface” of the solar cell 11.
  • the photoelectric conversion unit includes, for example, a semiconductor substrate, an amorphous semiconductor layer formed on the substrate, and a transparent conductive layer formed on the amorphous semiconductor layer.
  • the semiconductor constituting the semiconductor substrate include crystalline silicon (c-Si), gallium arsenide (GaAs), indium phosphide (InP), and the like.
  • the amorphous semiconductor constituting the amorphous semiconductor layer include i-type amorphous silicon, n-type amorphous silicon, and p-type amorphous silicon.
  • the transparent conductive layer may be composed of a transparent conductive oxide obtained by doping metal oxide such as indium oxide (In 2 O 3 ) or zinc oxide (ZnO) with tin (Sn), antimony (Sb), or the like. preferable.
  • an n-type single crystal silicon substrate is applied to the semiconductor substrate.
  • an i-type amorphous silicon layer, a p-type amorphous silicon layer, and a transparent conductive layer are sequentially formed on the light-receiving surface of the n-type single crystal silicon substrate, and the i-type amorphous is formed on the back surface of the substrate. It has a structure in which a silicon layer, an n-type amorphous silicon layer, and a transparent conductive layer are formed in this order.
  • the p-type amorphous silicon layer may be formed on the back surface side of the n-type single crystal silicon substrate, and the n-type amorphous silicon layer may be formed on the light receiving surface side of the substrate. That is, the photoelectric conversion unit has a junction (heterojunction) between semiconductors having different optical gaps.
  • An amorphous silicon layer (thickness: several to several tens of nm) forming a heterojunction generally absorbs light having a wavelength of 600 nm or less.
  • a light-transmitting member such as a glass substrate, a resin substrate, or a resin film can be used.
  • a glass substrate from the viewpoints of fire resistance, durability, and the like.
  • the thickness of the glass substrate is not particularly limited, but is preferably about 2 to 6 mm.
  • the same transparent member as the first protective member 12 may be used, or an opaque member may be used.
  • a resin film is used as the second protective member 13.
  • the resin film is not particularly limited, but is preferably a polyethylene terephthalate (PET) film. From the standpoint of reducing moisture permeability, the resin film may be formed with an inorganic compound layer such as silica or a metal layer such as aluminum when light incidence from the back side is not assumed.
  • the thickness of the resin film is not particularly limited, but is preferably about 50 ⁇ m to 300 ⁇ m.
  • the sealing layer 14 serves to prevent moisture or the like from coming into contact with the solar cell 11.
  • the sealing layer 14 is also called a filler layer (filler).
  • the sealing layer 14 is formed by a laminating process described later using, for example, two resin sheets that respectively form the sealing layers 14a and 14b.
  • the sealing layers 14a and 14b are in close contact with each other between the solar cells 11 and between the end portion of the solar cell panel 16 and the solar cell 11 adjacent to the end portion.
  • the thickness of the sealing layer 14 is not particularly limited, but preferably the thickness of each of the sealing layers 14a and 14b is about 100 ⁇ m to 600 ⁇ m.
  • FIG. 2 is a cross-sectional view of the solar cell panel 16.
  • the wavelength converting substance 30 is indicated by white circles.
  • the wavelength converting substance 30 is contained in at least the sealing layer 14 a provided on the light receiving surface side of the solar cell 11. That is, the wavelength converting substance 30 may be contained only in the sealing layer 14a (in this case, the concentration of the wavelength converting substance 30 is naturally sealing layer 14a> sealing layer 14b).
  • the wavelength conversion substance 30 may be contained in the sealing layer 14b provided on the back side of the solar cell 11, but the concentration of the wavelength conversion substance 30 is higher in the sealing layer 14a than in the sealing layer 14b.
  • the concentration of the wavelength converting substance 30 in the sealing layer 14a is, for example, 0.1 to 15% by weight, and more preferably 1.5 to 10% by weight in the case of an inorganic wavelength converting substance. In the case of an organic wavelength converting substance, it is, for example, 0.02 to 2.0% by weight, more preferably 0.05 to 0.8% by weight.
  • the resin constituting the sealing layer 14 preferably has good adhesion to each protective member and the solar cell 11 and hardly permeates moisture.
  • an olefin resin obtained by polymerizing at least one selected from ⁇ -olefins having 2 to 20 carbon atoms (eg, polyethylene, polypropylene, random or block copolymers of ethylene and other ⁇ -olefins, etc.
  • Ester resins for example, polycondensates of polyols and polycarboxylic acids or acid anhydrides / lower alkyl esters thereof
  • urethane resins for example, polyisocyanates and active hydrogen group-containing compounds (diols, polyolreols, Dicarboxylic acids, polycarboxylic acids, polyamines, polythiols, etc.)
  • epoxy resins eg, polyepoxide ring-opening polymers, polyepoxides and active hydrogen group-containing compounds
  • ⁇ Olefin and vinyl carboxylate, acrylic ester, or other vinyl And a copolymer of Rumonoma can be exemplified.
  • olefin resins particularly polymers containing ethylene
  • copolymers of ⁇ -olefin and vinyl carboxylate are particularly preferable.
  • ethylene-vinyl acetate copolymer EVA
  • resin 14a a resin constituting the sealing layer 14a
  • resin 14b a resin constituting the sealing layer 14b
  • the resin 14b a resin having a smaller diffusion coefficient of the wavelength conversion material 30 than that of the resin 14a is used.
  • the diffusion coefficient is a proportional coefficient that defines the speed of diffusion that appears in Fick's law.
  • the diffusion coefficient of the wavelength converting substance 30 is such that the layer made of the resin to be measured containing the wavelength converting substance 30 and the olefin resin layer not containing the wavelength converting substance 30 are overlapped to obtain the wavelength converting substance from the resin layer to be measured. It can be calculated by calculating 30 outflow velocities.
  • the outflow rate can be determined by quantitative determination by gas chromatography or transmission spectrum measurement.
  • the diffusion coefficient of the wavelength converting substance 30 in the resin 14a is, for example, 1 ⁇ 10 ⁇ 12 to 1 ⁇ 10 ⁇ 10 (m 2 / s) at 120 ° C.
  • the diffusion coefficient of the wavelength converting substance 30 in the resin 14b is, for example, 1 ⁇ 10 ⁇ 13 to 1 ⁇ 10 ⁇ 11 (m 2 / s) at 120 ° C.
  • the resin 14b preferably has a higher storage elastic modulus (hereinafter simply referred to as “storage elastic modulus”) at 25 ° C. to 90 ° C. than the resin 14a.
  • the storage elastic modulus is a ratio of elastic stress having the same phase as strain and is represented by a real part of a complex elastic modulus. The greater the storage modulus value, the more elastic the resin.
  • the storage elastic modulus of the resins 14a and 14b can be measured using a dynamic viscoelasticity measuring device. By setting the storage elastic modulus to be resin 14b> resin 14a, it becomes easy to set the diffusion coefficient of the wavelength converting material 30 to resin 14b ⁇ resin 14a.
  • the storage elastic modulus of the resin 14a (tensile mode at 25 ° C., value at a frequency of 10 Hz) is 1 ⁇ 10 7 to 1 ⁇ 10 8 (Pa), and the storage elastic modulus of the resin 14b under the same conditions is 1 ⁇ 10 8 to 1 ⁇ 10 9 (Pa).
  • the resin 14b preferably has a smaller intermolecular void size at 25 ° C. to 90 ° C. than the resin 14a. In other words, the resin 14b preferably has a smaller free volume at 25 ° C. to 90 ° C. than the resin 14a.
  • the intermolecular void size means the size of a void portion not occupied by molecules (atoms).
  • the intermolecular void size of the resins 14a and 14b can be measured using a positron annihilation method.
  • the intermolecular void size of the resin 14a is 0.08 to 0.12 nm 3
  • the intermolecular void size of the resin 14b is 0.05 to 0.09 nm 3 .
  • the combination of the resins 14a and 14b is not particularly limited as long as the above relationship is satisfied, but examples thereof include the following combinations.
  • Example 1 Resin 14a; Low density polyolefin, Resin 14b: High density polyolefin
  • Example 2 Resin 14a; Low molecular weight polyolefin, Resin 14b: High molecular weight polyolefin
  • Example 3 Resin 14a; Low molecular weight EVA, Resin 14b: High molecular weight EVA
  • the wavelength converting substance 30 absorbs ultraviolet light, for example, light having a wavelength shorter than 380 nm, and converts it into light having a longer wavelength (for example, 400 nm to 800 nm). In this case, the wavelength conversion substance 30 also contributes to suppression of deterioration of the constituent material due to ultraviolet rays.
  • the wavelength converting substance 30 preferably absorbs ultraviolet rays and emits visible light, but may absorb visible light or infrared light. Generally, the wavelength converting substance 30 converts short-wavelength light into longer-wavelength light. However, the wavelength-converting substance 30 may cause so-called up-conversion light emission that converts long-wavelength light into shorter-wavelength light. .
  • a preferable conversion wavelength varies depending on the type of the solar cell 11.
  • the wavelength conversion material 30 absorbs light having a wavelength having energy equal to or greater than the band gap of the heterojunction layer and converts the wavelength.
  • the wavelength conversion substance 30 converts light having a wavelength that is absorbed by the heterojunction layer.
  • a wavelength conversion material 30 that absorbs light having a wavelength ⁇ that is absorbed by an amorphous semiconductor layer and can convert it into light having a wavelength ⁇ that is not absorbed by the semiconductor layer is used.
  • the wavelength ⁇ is 600 nm or less.
  • the wavelength converting substance 30 include inorganic compounds such as semiconductor nanoparticles (quantum dots) and luminescent metal complexes, and organic compounds such as organic fluorescent dyes.
  • semiconductor nanoparticles include zinc oxide (ZnO), cadmium selenide (CdSe), cadmium telluride (CdTe), gallium nitride (GaN), yttrium oxide (Y 2 O 3 ), indium phosphide (InP), and the like. Particles can be exemplified.
  • Examples of the luminescent metal complex include Ir complexes such as [Ir (bqn) 3 ] (PF 6 ) 3 and [Ir (dpbpy) 3 ] (PF 6 ) 3 , [Ru (bqn) 3 ] (PF 6 ) 3 , Ru complexes such as [Ru (bpy) 3 ] (ClO 4 ) 2 , Eu complexes such as [Eu (FOD) 3 ] phen, [Eu (TFA) 3 ] phen, [Tb (FOD) 3 ] phen, [Tb Examples include Tb complexes such as (HFA) 3 ] phen.
  • Examples of organic fluorescent dyes include rhodamine dyes, coumarin dyes, fluorescein dyes, and perylene dyes.
  • the wavelength converting substance 30 is dispersed substantially uniformly in the sealing layer 14a, for example.
  • the sealing layer 14a may contain an ultraviolet absorbing material that absorbs ultraviolet rays and does not emit light. In this case, for example, even if the concentration of the wavelength conversion material 30 is higher in the vicinity of the first protective member 12 than in the vicinity of the solar cell 11, a non-uniform concentration distribution of the wavelength conversion material 30 may be provided in the sealing layer 14a. Good. Two or more kinds of wavelength converting substances 30 may be added to the sealing layer 14a, and a non-uniform concentration distribution of each wavelength converting substance 30 may be provided in the sealing layer 14a.
  • the solar cell module 10 having the above configuration uses a resin sheet constituting the first protective member 12, the second protective member 13, and the sealing layer 14 for the strings of the solar cells 11 connected by the wiring member 15. It can be manufactured by laminating.
  • the first protective member 12, the resin sheet constituting the sealing layer 14a, the string of the solar cell 11, the resin sheet constituting the sealing layer 14b, and the second protective member 13 are sequentially laminated on the heater.
  • the resin sheet constituting the sealing layer 14a contains the wavelength conversion substance 30.
  • This laminated body is heated to about 150 ° C. in a vacuum state, for example. Thereafter, heating is continued while pressing each component member on the heater side under atmospheric pressure, and the resin component of the resin sheet is crosslinked to obtain the solar cell panel 16.
  • the solar cell module 10 is obtained by attaching the frame 17 and the like to the solar cell panel 16.
  • the wavelength conversion material 30 in the sealing layer 14 a disposed on the light receiving surface side of the solar cell 11 is disposed on the back surface side of the solar cell 11. It is possible to suppress diffusion into the sealing layer 14b. That is, in the solar cell module 10, the high concentration of the wavelength conversion substance 30 is maintained over a long period of time in the sealing layer 14a where a lot of light is incident. Thereby, the utilization efficiency of incident light is improved and the photoelectric conversion efficiency can be improved.
  • FIG. 3 is a cross-sectional view of a solar cell panel 51 constituting the solar cell module 50.
  • FIG. 4 is a plan view showing an extracted diffusion suppression layer 52 that constitutes the solar cell module 50.
  • differences from the first embodiment will be mainly described, and the same components as those in the first embodiment are denoted by the same reference numerals, and redundant description will be omitted (about the third embodiment). The same).
  • a solar cell is provided in that a diffusion suppression layer 52 that suppresses diffusion of the wavelength conversion substance 30 is provided between the sealing layer 14a and the sealing layer 14b.
  • the diffusion suppression layer 52 is interposed in substantially the entire area between both layers so that the sealing layer 14a and the sealing layer 14b do not contact each other.
  • the diffusion suppression layer 52 is provided, for example, between the gaps between the adjacent solar cells 11 and between the end portion of the solar cell panel 51 and the solar cell 11 adjacent to the end portion.
  • the diffusion suppression layer 52 is made of a material having a smaller diffusion coefficient of the wavelength conversion substance 30 than the resin 14a.
  • the diffusion suppression layer 52 is configured using a resin sheet that does not have a metal layer or an inorganic compound layer, and a resin that constitutes the diffusion suppression layer 52 (hereinafter may be referred to as “resin 52”).
  • resin 52 has a smaller diffusion coefficient of the wavelength converting material 30 than the resin 14a.
  • the resin 52 preferably has a higher storage elastic modulus than the resin 14a, and preferably has a smaller intermolecular void size than the resin 14a.
  • the relationship between the resin 14a and the resin 52 is, for example, the same as the relationship between the resin 14a and the resin 14b in the first embodiment. Furthermore, it is preferable that the resin 52 has a smaller diffusion coefficient of the wavelength converting material 30 than the resin 14b.
  • the diffusion suppression layer 52 is made of a resin sheet in which a through hole 53 is formed in a portion where the solar cell 11 is disposed, and the resin sheet is sealed with a resin sheet constituting the sealing layer 14 a. It is preferable to be provided between the resin sheet constituting the stopper layer 14b.
  • the solar cell 11 has a shape obtained by obliquely cutting four corners of a substantially square shape in plan view, and the through hole 53 has substantially the same shape as the solar cell 11.
  • the through holes 53 are formed corresponding to the number of solar cells 11 (eight in the example shown in FIG. 4).
  • the diffusion suppression layer 52 may be provided so that the through hole 53 is formed larger than the solar cell 11 and does not overlap the solar cell 11, but preferably the through hole 53 is formed slightly smaller than the solar cell 11.
  • the solar cell 11 is provided so as to overlap the edge portion.
  • the wavelength conversion material 30 in the sealing layer 14 a can be prevented from diffusing to the back surface side of the solar cell 11. Furthermore, in the case of the solar cell module 50, since the diffusion suppression layer 52 suppresses the diffusion of the wavelength conversion material 30, the degree of freedom in designing the sealing layer 14b is higher than in the case of the solar cell module 10.
  • FIG. 5 is a cross-sectional view of the solar cell panel 61 constituting the solar cell module 60, and shows an enlarged gap between adjacent solar cells 11.
  • the solar cell module 60 is provided with a diffusion suppression layer 62 that suppresses the diffusion of the wavelength conversion substance 30 between the sealing layer 14 a and the sealing layer 14 b. 50.
  • the diffusion suppression layer 62 is different from the solar cell module 50 in that the diffusion suppression layer 62 includes a resin layer 63 and a metal layer 64.
  • the resin constituting the resin layer 63 is not particularly limited, and may be the same resin as the resins 14a and 14b, for example.
  • the metal constituting the metal layer 64 of the diffusion suppressing layer 62 has a diffusion coefficient of the wavelength conversion substance 30 that is substantially zero (the diffusion coefficient of the wavelength conversion substance 30 is smaller than that of the resin 14a). Therefore, the diffusion of the wavelength converting substance 30 to the sealing layer 14b can be highly suppressed by interposing the diffusion suppressing layer 62 in substantially the entire area between the sealing layer 14a and the sealing layer 14b. Note that the metal constituting the metal layer 64 has a higher storage elastic modulus than the resin 14a.
  • the diffusion suppression layer 62 is disposed on the light receiving surface side of the solar cell 11 so as to overlap the edge of the solar cell 11. In addition, you may arrange
  • the metal layer 64 also functions as a reflective layer that diffuses and reflects incident light that passes through the gap between the solar cells 11 to the back surface side and re-enters the solar cells 11, for example. Irregularities may be formed on the surface of the metal layer 64 in order to promote diffuse reflection of light.
  • the diffusion suppression layer 52 is provided using a resin sheet having the through holes 53, but a resin sheet having no through holes is used, or a plurality of strip-shaped sheets are formed between the solar cells 11. It is good also as arrange
  • the diffusion suppressing layer may have an inorganic compound layer such as silica instead of the metal layer 64.

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Abstract

　太陽電池モジュール１０は、太陽電池１１と、太陽電池１１の受光面側に設けられた第１保護部材１２と、太陽電池１１の裏面側に設けられた第２保護部材１３と、太陽電池１１と第１保護部材１２の間に配置された封止層１４ａ、及び太陽電池１１と第２保護部材１３の間に配置された封止層１４ｂを含み、太陽電池１１を封止する封止層１４と、少なくとも封止層１４ａに含有される、特定波長の光を吸収して当該波長を変換する波長変換物質３０とを備える。波長変換物質３０の濃度は、封止層１４ｂよりも封止層１４ａで高く、封止層１４ｂを構成する樹脂は、封止層１４ａを構成する樹脂よりも波長変換物質３０の拡散係数が小さい。

Description

太陽電池モジュール
　本開示は、太陽電池モジュールに関する。
　特定波長の光を吸収して当該波長を変換する波長変換物質を備えた太陽電池モジュールが知られている。かかる太陽電池モジュールによれば、入射光のうち発電に対する寄与が少ない波長域の光を発電に対する寄与が大きな波長域の光に変換することが可能である。例えば、特許文献１は、波長変換物質を含有する封止層を太陽電池の受光面側に配置した太陽電池モジュールを開示している。
国際公開第２０１１／１４８９５１号パンフレット
　ところで、太陽電池モジュールでは、多くの光が受光面側から入射するため、波長変換効率向上の観点から、太陽電池の受光面側に波長変換物質を配置することが好適である。しかし、太陽電池モジュールの長期使用により、波長変換物質が太陽電池の裏面側に拡散して、受光面側における波長変換物質の濃度が減少する場合がある。
　本開示に係る太陽電池モジュールの一態様は、太陽電池と、太陽電池の受光面側に設けられた第１保護部材と、太陽電池の裏面側に設けられた第２保護部材と、太陽電池と第１保護部材の間に配置された第１封止層、及び太陽電池と第２保護部材の間に配置された第２封止層を含み、太陽電池を封止する封止層と、少なくとも第１封止層に含有される、特定波長の光を吸収して当該波長を変換する波長変換物質と、を備え、波長変換物質の濃度は、第２封止層よりも第１封止層で高く、第２封止層を構成する樹脂は、第１封止層を構成する樹脂よりも波長変換物質の拡散係数が小さい。
　本開示に係る太陽電池モジュールの一態様は、第１封止層と第２封止層の間に、第１封止層を構成する樹脂よりも波長変換物質の拡散係数が小さい材料から構成される拡散抑制層が設けられている。
　本開示に係る太陽電池モジュールによれば、太陽電池の受光面側に配置される波長変換物質が太陽電池の裏面側に拡散することを抑制できる。
第１の実施形態である太陽電池モジュールの断面図である。 第１の実施形態である太陽電池モジュールを構成する太陽電池パネルの断面図である（配線材は省略）。 第２の実施形態である太陽電池モジュールを構成する太陽電池パネルの断面図である（配線材は省略）。 図３の拡散抑制層を抜き出して示す平面図である。 第３の実施形態である太陽電池モジュールを構成する太陽電池パネルの断面図である（配線材は省略）。
　以下、図面を参照しながら、実施形態の一例について詳細に説明する。
　実施形態において参照する図面は、模式的に記載されたものであり、図面に描画された構成要素の寸法比率などは、現物と異なる場合がある。具体的な寸法比率等は、以下の説明を参酌して判断されるべきである。
　本明細書において、太陽電池モジュール、太陽電池、光電変換部の「受光面」とは光が主に入射する面を意味し（５０％超過～１００％の光が受光面から入射する）、「裏面」とは受光面と反対側の面を意味する。また、「第１の部材上に第２の部材を設ける」等の記載は、特に限定を付さない限り、第１及び第２の部材が直接接触して設けられる場合のみを意図しない。即ち、この記載は、第１及び第２の部材の間に他の部材が存在する場合を含む。また、「略＊＊」との記載は、「略同一」を例に挙げて説明すると、全く同一はもとより、実質的に同一と認められるものを含む意図である。
　＜第１の実施形態＞
　以下、図１及び図２を参照しながら、第１の実施形態である太陽電池モジュール１０について詳細に説明する。
　図１は、実施形態の一例である太陽電池モジュール１０の断面図である。
　図１に示すように、太陽電池モジュール１０は、太陽電池１１と、太陽電池１１の受光面側に設けられた第１保護部材１２と、太陽電池１１の裏面側に設けられた第２保護部材１３と、太陽電池１１を封止する封止層１４とを備える。封止層１４は、太陽電池１１と第１保護部材１２の間に配置された封止層１４ａ（第１封止層）と、太陽電池１１と第２保護部材１３の間に配置された封止層１４ｂ（第２封止層）とを含む。
　太陽電池モジュール１０は、少なくとも封止層１４ａに含有される波長変換物質３０を備える（後述の図２等参照）。波長変換物質３０は、特定波長の光を吸収して当該波長を変換する物質であって、発電に対する寄与の少ない波長域の光を発電に対する寄与が大きな波長域の光に変換する役割を果たす。
　本実施形態では、複数の太陽電池１１が略同一平面上に配置されている。隣り合う太陽電池１１同士は、配線材１５によって直列に接続され、これにより太陽電池１１のストリングが形成される。配線材１５は、例えば隣り合う太陽電池１１の間でモジュールの厚み方向に曲がり、一方の太陽電池１１の受光面側の電極と他方の太陽電池１１の裏面側の電極とに接着剤等を用いてそれぞれ取り付けられる。
　太陽電池１１、第１保護部材１２、第２保護部材１３、及び封止層１４は、太陽電池パネル１６を構成する。太陽電池パネル１６は、太陽電池１１のストリングが各保護部材により挟まれた板状体であって、例えば平面視（受光面に対して垂直な方向から見た場合）において略矩形形状を有する。太陽電池パネル１６の端縁部には、フレーム１７が取り付けられることが好適である。フレーム１７は、太陽電池パネル１６の端縁部を保護し、また太陽電池モジュール１０を屋根等に設置する際に利用される。
　太陽電池１１は、受光によりキャリアを生成する光電変換部を備える。太陽電池１１は、光電変換部で生成したキャリアを収集する電極として、光電変換部の受光面上に形成される受光面電極と、裏面上に形成される裏面電極とを有する。但し、太陽電池１１の構造はこれに限定されず、例えば光電変換部の裏面上のみに電極が形成された構造であってもよい。なお、裏面電極は受光面電極よりも大面積に形成されることが好ましく、電極面積が大きい方の面（又は電極が形成される面）が太陽電池１１の「裏面」であるといえる。
　光電変換部は、例えば半導体基板と、当該基板上に形成された非晶質半導体層と、当該非晶質半導体層上に形成された透明導電層とを有する。半導体基板を構成する半導体としては、結晶系シリコン（ｃ‐Ｓｉ）、ガリウム砒素（ＧａＡｓ）、インジウム燐（ＩｎＰ）等が例示できる。非晶質半導体層を構成する非晶質半導体としては、ｉ型非晶質シリコン、ｎ型非晶質シリコン、ｐ型非晶質シリコン等が例示できる。透明導電層は、酸化インジウム（Ｉｎ2Ｏ3）や酸化亜鉛（ＺｎＯ）等の金属酸化物に、錫（Ｓｎ）やアンチモン（Ｓｂ）等をドープした透明導電性酸化物から構成されることが好ましい。
　本実施形態では、半導体基板にｎ型単結晶シリコン基板を適用する。光電変換部は、ｎ型単結晶シリコン基板の受光面上にｉ型非晶質シリコン層、ｐ型非晶質シリコン層、透明導電層が順に形成され、基板の裏面上にｉ型非晶質シリコン層、ｎ型非晶質シリコン層、透明導電層が順に形成された構造を有する。或いは、ｐ型非晶質シリコン層がｎ型単結晶シリコン基板の裏面側に、ｎ型非晶質シリコン層が基板の受光面側にそれぞれ形成されていてもよい。即ち、光電変換部は、光学ギャップが互いに異なる半導体同士の接合（ヘテロ接合）を有する。ヘテロ接合を形成する非晶質シリコン層（厚み：数ｎｍ～数十ｎｍ）は、一般的に波長６００ｎｍ以下の光を吸収する。
　第１保護部材１２には、例えばガラス基板や樹脂基板、樹脂フィルム等の透光性を有する部材を用いることができる。これらのうち、耐火性、耐久性等の観点から、ガラス基板を用いることが好ましい。ガラス基板の厚みは特に限定されないが、好ましくは２～６ｍｍ程度である。
　第２保護部材１３には、第１保護部材１２と同じ透明な部材を用いてもよいし、不透明な部材を用いてもよい。本実施形態では、第２保護部材１３として樹脂フィルムを用いる。樹脂フィルムは特に限定されないが、好ましくはポリエチレンテレフタレート（ＰＥＴ）フィルムである。水分透過性を低くする等の観点から、樹脂フィルムには、シリカ等の無機化合物層や、裏面側からの光の入射を想定しない場合にはアルミニウム等の金属層が形成されていてもよい。樹脂フィルムの厚みは特に限定されないが、好ましくは５０μｍ～３００μｍ程度である。
　封止層１４は、太陽電池１１に水分等が接触することを防止する役割を果たす。封止層１４は、充填剤層（充填剤）とも呼ばれる。封止層１４は、例えば封止層１４ａ，１４ｂをそれぞれ構成する２枚の樹脂シートを用いて、後述のラミネート工程により形成される。本実施形態では、太陽電池１１同士の間、及び太陽電池パネル１６の端部と当該端部に近接する太陽電池１１との間において、封止層１４ａ，１４ｂが互いに密着している。封止層１４の厚みは、特に限定されないが、好ましくは封止層１４ａ，１４ｂのそれぞれの厚みが１００μｍ～６００μｍ程度である。
　以下、図２をさらに参照しながら、波長変換物質３０を含有する封止層１４について、さらに詳説する。図２は、太陽電池パネル１６の断面図である。図２では波長変換物質３０を白丸で示している。
　図２に示すように、波長変換物質３０は、少なくとも太陽電池１１の受光面側に設けられる封止層１４ａに含有されている。即ち、波長変換物質３０は、封止層１４ａのみに含有されていてもよい（この場合、波長変換物質３０の濃度は、当然に封止層１４ａ＞封止層１４ｂである）。波長変換物質３０は、太陽電池１１の裏面側に設けられる封止層１４ｂに含有されていてもよいが、波長変換物質３０の濃度は、封止層１４ｂよりも封止層１４ａで高くされる。封止層１４ａにおける波長変換物質３０の濃度は、無機系波長変換物質であれば、例えば０．１～１５重量％であり、より好ましくは１．５～１０重量％である。有機系波長変換物質の場合は、例えば０．０２～２．０重量％であり、より好ましくは０．０５～０．８重量％である。
　封止層１４（封止層１４ａ，１４ｂ）を構成する樹脂は、各保護部材及び太陽電池１１に対する密着性が良く、水分を透過し難いものが好ましい。具体的には、炭素数２～２０のαオレフィンから選ばれる少なくとも１種を重合して得られるオレフィン系樹脂（例えば、ポリエチレン、ポリプロピレン、エチレンとその他のαオレフィンとのランダム又はブロック共重合体など）、エステル系樹脂（例えば、ポリオールとポリカルボン酸又はその酸無水物・低級アルキルエステルとの重縮合物など）、ウレタン系樹脂（例えば、ポリイソシアネートと活性水素基含有化合物（ジオール、ポリオールリオール、ジカルボン酸、ポリカルボン酸、ポリアミン、ポリチオール等）との重付加物など）、エポキシ系樹脂（例えば、ポリエポキシドの開環重合物、ポリエポキシドと上記活性水素基含有化合物との重付加物など）、αオレフィンとカルボン酸ビニル、アクリル酸エステル、又はその他ビニルモノマーとの共重合体などが例示できる。
　これらのうち、特に好ましくはオレフィン系樹脂（特に、エチレンを含む重合体）、及びαオレフィンとカルボン酸ビニルとの共重合体である。αオレフィンとカルボン酸ビニルとの共重合体としては、エチレン－酢酸ビニル共重合体（ＥＶＡ）が特に好ましい。但し、封止層１４ａを構成する樹脂（以下、「樹脂１４ａ」という場合がある）と、封止層１４ｂを構成する樹脂（以下、「樹脂１４ｂ」という場合がある）との組み合わせについては、後述の関係を満たす必要がある。
　樹脂１４ｂには、樹脂１４ａよりも波長変換物質３０の拡散係数が小さな樹脂が用いられる。拡散係数とは、フィックの法則に現れる拡散の速さを規定する比例係数である。波長変換物質３０の拡散係数は、波長変換物質３０を含む測定対象の樹脂からなる層と、波長変換物質３０を含まないオレフィン系樹脂層とを重ねあわせ、測定対象の樹脂層からの波長変換物質３０の流出速度を求めることにより算出できる。当該流出速度は、ガスクロマトグラフィーによる定量、又は透過スペクトル測定により求めることができる。波長変換物質３０の拡散係数を樹脂１４ｂ＜樹脂１４ａとすることで、封止層１４ａ中に含まれる波長変換物質３０が封止層１４ｂ中に拡散することを抑制できる。
　樹脂１４ａにおける波長変換物質３０の拡散係数は、例えば１２０℃において１×１０-12～１×１０-10（ｍ2／ｓ）である。樹脂１４ｂにおける波長変換物質３０の拡散係数は、例えば１２０℃において１×１０-13～１×１０-11（ｍ2／ｓ）である。
　樹脂１４ｂは、樹脂１４ａよりも２５℃～９０℃における貯蔵弾性率（以下、単に「貯蔵弾性率」とする）が高いことが好ましい。貯蔵弾性率とは、歪みと同位相の弾性応力の比であって、複素弾性率の実数部で表される。貯蔵弾性率の数値が大きいほど、樹脂は高弾性である。樹脂１４ａ，１４ｂの貯蔵弾性率は、動的粘弾性測定装置を用いて測定できる。貯蔵弾性率を樹脂１４ｂ＞樹脂１４ａとすることで、波長変換物質３０の拡散係数を樹脂１４ｂ＜樹脂１４ａとすることが容易になる。好ましくは、樹脂１４ａの貯蔵弾性率（２５℃での引張モード・周波数１０Ｈｚにおける値）が１×１０7～１×１０8（Ｐａ）であり、同条件における樹脂１４ｂの貯蔵弾性率が１×１０8～１×１０9（Ｐａ）である。
　樹脂１４ｂは、樹脂１４ａよりも２５℃～９０℃における分子間空隙サイズが小さいことが好ましい。換言すると、樹脂１４ｂは、樹脂１４ａよりも２５℃～９０℃における自由体積が小さいことが好ましい。分子間空隙サイズとは、分子（原子）に占有されていない空隙部分のサイズを意味する。樹脂１４ａ，１４ｂの分子間空隙サイズは、陽電子消滅法を用いて測定できる。分子間空隙サイズを樹脂１４ｂ＜樹脂１４ａとすることで、波長変換物質３０の拡散係数を樹脂１４ｂ＜樹脂１４ａとすることが容易になる。好ましくは、樹脂１４ａの分子間空隙サイズが０．０８～０．１２ｎｍ3であり、樹脂１４ｂの分子間空隙サイズが０．０５～０．０９ｎｍ3である。
　樹脂１４ａ，１４ｂの組み合わせは、上記の関係を満たすものであれば特に限定されないが、一例としては下記のような組み合わせが挙げられる。
　例１　樹脂１４ａ；低密度ポリオレフィン、樹脂１４ｂ：高密度ポリオレフィン
　例２　樹脂１４ａ；低分子量ポリオレフィン、樹脂１４ｂ：高分子量ポリオレフィン
　例３　樹脂１４ａ；低分子量ＥＶＡ、樹脂１４ｂ：高分子量ＥＶＡ
　波長変換物質３０は、例えば３８０ｎｍより短波長の光である紫外線を吸収して、より長波長（例えば、４００ｎｍ～８００ｎｍ）の光に変換する。この場合、波長変換物質３０は、紫外線による構成材料の劣化抑制にも寄与する。波長変換物質３０は、紫外線を吸収して可視光を発光するものが好ましいが、可視光又は赤外光を吸収するものであってもよい。一般的に、波長変換物質３０は、短波長の光をより長波長の光に変換するが、長波長の光をより短波長の光に変換する所謂アップコンバージョン発光を起こすものであってもよい。好ましい変換波長は、太陽電池１１の種類によって変化する。
　本実施形態では、太陽電池１１がヘテロ接合層（非晶質半導体層）を有するため、波長変換物質３０は、ヘテロ接合層のバンドギャップ以上のエネルギーを持つ波長の光を吸収して波長変換することが好適である。即ち、波長変換物質３０は、ヘテロ接合層に吸収される波長の光を変換することが好適である。例えば、非晶質半導体層が吸収する波長λαの光を吸収して、当該半導体層に吸収されない波長λβの光に変換可能な波長変換物質３０を用いる。波長λαは、６００ｎｍ以下である。
　波長変換物質３０の具体例としては、半導体ナノ粒子（量子ドット）、発光性金属錯体等の無機系化合物、有機蛍光色素等の有機系化合物が挙げられる。半導体ナノ粒子としては、酸化亜鉛（ＺｎＯ）、セレン化カドミウム（ＣｄＳｅ）、テルル化カドミウム（ＣｄＴｅ）、窒化ガリウム（ＧａＮ）、酸化イットリウム（Ｙ2Ｏ3）、リン化インジウム（ＩｎＰ）等のナノ粒子が例示できる。発光性金属錯体としては、〔Ｉｒ（ｂｑｎ）3〕（ＰＦ6）3、〔Ｉｒ（ｄｐｂｐｙ）3〕（ＰＦ6）3等のＩｒ錯体、〔Ｒｕ（ｂｑｎ）3〕（ＰＦ6）3、〔Ｒｕ（ｂｐｙ）3〕（ＣｌＯ4）2等のＲｕ錯体、〔Ｅｕ（ＦＯＤ）3〕ｐｈｅｎ、〔Ｅｕ（ＴＦＡ）3〕ｐｈｅｎ等のＥｕ錯体、〔Ｔｂ（ＦＯＤ）3〕ｐｈｅｎ、〔Ｔｂ（ＨＦＡ）3〕ｐｈｅｎ等のＴｂ錯体が例示できる。有機蛍光色素としては、ローダミン系色素、クマリン系色素、フルオレセイン系色素、ペリレン系色素が例示できる。
　波長変換物質３０は、例えば封止層１４ａ中に略均一に分散している。なお、封止層１４ａには、紫外線を吸収して発光しない紫外線吸収物質が含有されていてもよい。この場合、例えば太陽電池１１の近傍よりも第１保護部材１２の近傍において波長変換物質３０の濃度を高くする等、封止層１４ａ中で波長変換物質３０の不均一な濃度分布を設けてもよい。また、２種類以上の波長変換物質３０を封止層１４ａに添加してもよく、封止層１４ａ中で当該各波長変換物質３０の不均一な濃度分布を設けてもよい。
　上記構成を備えた太陽電池モジュール１０は、配線材１５により接続された太陽電池１１のストリングを、第１保護部材１２、第２保護部材１３、及び封止層１４を構成する樹脂シートを用いてラミネートすることにより製造できる。ラミネート装置では、例えばヒーター上に、第１保護部材１２、封止層１４ａを構成する樹脂シート、太陽電池１１のストリング、封止層１４ｂを構成する樹脂シート、第２保護部材１３が順に積層される。封止層１４ａを構成する樹脂シートには、波長変換物質３０が含有されている。この積層体は、例えば真空状態で１５０℃程度に加熱される。その後、大気圧下でヒーター側に各構成部材を押し付けながら加熱を継続し、樹脂シートの樹脂成分を架橋させることにより、太陽電池パネル１６が得られる。最後に、フレーム１７等を太陽電池パネル１６に取り付けて太陽電池モジュール１０が得られる。
　以上のように、上記構成を備えた太陽電池モジュール１０によれば、太陽電池１１の受光面側に配置される封止層１４ａ中の波長変換物質３０が、太陽電池１１の裏面側に配置される封止層１４ｂ中に拡散することを抑制できる。つまり、太陽電池モジュール１０では、多くの光が入射する封止層１４ａにおいて、波長変換物質３０の高い濃度が長期に亘って維持される。これにより、入射光の利用効率が改善され、光電変換効率を向上させることができる。
　＜第２の実施形態＞
　以下、図３及び図４を参照しながら、第２の実施形態である太陽電池モジュール５０について詳細に説明する。図３は、太陽電池モジュール５０を構成する太陽電池パネル５１の断面図である。図４は、太陽電池モジュール５０を構成する拡散抑制層５２を抜き出して示す平面図である。以下では、第１の実施形態との相違点を主に説明するものとし、第１の実施形態と同様の構成要素には同じ符号を用いて重複する説明を省略する（第３の実施形態についても同様）。
　図３に示すように、太陽電池モジュール５０では、封止層１４ａと封止層１４ｂとの間に、波長変換物質３０の拡散を抑制する拡散抑制層５２が設けられている点で、太陽電池モジュール１０と異なる。拡散抑制層５２は、封止層１４ａと封止層１４ｂとが接触しないように、両層の間の略全域に介在することが好適である。拡散抑制層５２は、例えば隣り合う太陽電池１１の間隙、及び太陽電池パネル５１の端部と当該端部に近接する太陽電池１１との間に設けられる。
　拡散抑制層５２は、樹脂１４ａよりも波長変換物質３０の拡散係数が小さい材料から構成されている。本実施形態では、金属層や無機化合物層を有さない樹脂シートを用いて拡散抑制層５２が構成されており、拡散抑制層５２を構成する樹脂（以下、「樹脂５２」という場合がある）は、樹脂１４ａよりも波長変換物質３０の拡散係数が小さい。樹脂５２は、樹脂１４ａよりも貯蔵弾性率が高いことが好ましく、樹脂１４ａよりも分子間空隙サイズが小さいことが好ましい。樹脂１４ａと樹脂５２との関係は、例えば第１の実施形態における樹脂１４ａと樹脂１４ｂとの関係と同じである。さらに、樹脂５２は樹脂１４ｂよりも波長変換物質３０の拡散係数が小さいことが好ましい。
　図４に示すように、拡散抑制層５２は、太陽電池１１が配置される部分に貫通孔５３が形成された樹脂シートからなり、当該樹脂シートを、封止層１４ａを構成する樹脂シートと封止層１４ｂを構成する樹脂シートとの間に挟んで設けられることが好適である。本実施形態では、太陽電池１１が平面視略正方形状の四隅を斜めにカットした形状を有し、貫通孔５３は太陽電池１１と略同一の形状を有する。貫通孔５３は、太陽電池１１の個数に対応して形成される（図４に示す例では８つ）。拡散抑制層５２は、貫通孔５３を太陽電池１１よりも大きく形成して太陽電池１１と重ならないように設けられてもよいが、好ましくは貫通孔５３を太陽電池１１よりもやや小さく形成して太陽電池１１の端縁部と重なるように設けられる。
　上記構成を備えた太陽電池モジュール５０によれば、太陽電池モジュール１０と同様に、封止層１４ａ中の波長変換物質３０が太陽電池１１の裏面側に拡散することを抑制できる。さらに、太陽電池モジュール５０の場合、拡散抑制層５２が波長変換物質３０の拡散を抑制するため、太陽電池モジュール１０の場合と比べて封止層１４ｂの設計自由度が高くなる。
　＜第３の実施形態＞
　以下、図５を参照しながら、第３の実施形態である太陽電池モジュール６０について詳細に説明する。図５は、太陽電池モジュール６０を構成する太陽電池パネル６１の断面図であって、隣り合う太陽電池１１の間隙部分を拡大して示す。
　図５に示すように、太陽電池モジュール６０では、封止層１４ａと封止層１４ｂの間に、波長変換物質３０の拡散を抑制する拡散抑制層６２が設けられている点で、太陽電池モジュール５０と共通する。一方、拡散抑制層６２が、樹脂層６３と、金属層６４とで構成されている点で、太陽電池モジュール５０と異なっている。樹脂層６３を構成する樹脂は、特に限定されず、例えば樹脂１４ａ，１４ｂと同様の樹脂であってもよい。
　拡散抑制層６２の金属層６４を構成する金属は、波長変換物質３０の拡散係数が略ゼロである（樹脂１４ａよりも波長変換物質３０の拡散係数が小さい）。ゆえに、拡散抑制層６２を封止層１４ａと封止層１４ｂとの間の略全域に介在させることで波長変換物質３０の封止層１４ｂへの拡散を高度に抑制できる。なお、金属層６４を構成する金属は、樹脂１４ａよりも貯蔵弾性率が高い。
　図５に示す例では、太陽電池１１の受光面側において、太陽電池１１の端縁部に重なって拡散抑制層６２が配置されている。なお、太陽電池１１の裏面側に拡散抑制層６２を配置してもよい。いずれの場合も、絶縁性確保の観点から、樹脂層６３が太陽電池１１側となるように拡散抑制層６２を配置する。金属層６４は、例えば太陽電池１１の間隙から裏面側に抜ける入射光を拡散反射して、太陽電池１１に再入射させる反射層としても機能する。金属層６４の表面には、光の拡散反射を促進するために、凹凸を形成してもよい。
　上記実施形態は、本開示の目的を損なわない範囲で適宜設計変更可能である。
　例えば、上記実施形態では、貫通孔５３を有する樹脂シートを用いて拡散抑制層５２を設けたが、貫通孔を有さない樹脂シートを用いて、或いは複数の短冊状シートを太陽電池１１の間隙に配置して、拡散抑制層としてもよい。また、拡散抑制層は、金属層６４の代わりに、シリカ等の無機化合物層を有していてもよい。
　１０，５０，６０　太陽電池モジュール、１１　太陽電池、１２　第１保護部材、１３　第２保護部材、１４，１４ａ，１４ｂ　封止層、１５　配線材、１６，５１，６１　太陽電池パネル、１７　フレーム、３０　波長変換物質、５２，６２　拡散抑制層、５３　貫通孔、６３　樹脂層、６４　金属層

Claims (6)

  1. 　太陽電池と、
    　前記太陽電池の受光面側に設けられた第１保護部材と、
    　前記太陽電池の裏面側に設けられた第２保護部材と、
    　前記太陽電池と前記第１保護部材の間に配置された第１封止層、及び前記太陽電池と前記第２保護部材の間に配置された第２封止層を含み、前記太陽電池を封止する封止層と、
    　少なくとも前記第１封止層に含有される、特定波長の光を吸収して当該波長を変換する波長変換物質と、
    　を備え、
    　前記波長変換物質の濃度は、前記第２封止層よりも前記第１封止層で高く、
    　前記第２封止層を構成する樹脂は、前記第１封止層を構成する樹脂よりも前記波長変換物質の拡散係数が小さい、太陽電池モジュール。
  2. 　前記第２封止層を構成する樹脂は、前記第１封止層を構成する樹脂よりも２５℃～９０℃における貯蔵弾性率が高い、請求項１に記載の太陽電池モジュール。
  3. 　前記第２封止層を構成する樹脂は、前記第１封止層を構成する樹脂よりも２５℃～９０℃における分子間空隙サイズが小さい、請求項１に記載の太陽電池モジュール。
  4. 　太陽電池と、
    　前記太陽電池の受光面側に設けられた第１保護部材と、
    　前記太陽電池の裏面側に設けられた第２保護部材と、
    　前記太陽電池と前記第１保護部材の間に配置された第１封止層、及び前記太陽電池と前記第２保護部材の間に配置された第２封止層を含み、前記太陽電池を封止する封止層と、
    　少なくとも前記第１封止層に含有される、特定波長の光を吸収して当該波長を変換する波長変換物質と、
    　を備え、
    　前記波長変換物質の濃度は、前記第２封止層よりも前記第１封止層で高く、
    　前記第１封止層と前記第２封止層の間に、前記第１封止層を構成する樹脂よりも前記波長変換物質の拡散係数が小さい材料から構成される拡散抑制層が設けられている、太陽電池モジュール。
  5. 　前記拡散抑制層を構成する材料は、前記第１封止層を構成する樹脂よりも２５℃～９０℃における貯蔵弾性率が高い、請求項４に記載の太陽電池モジュール。
  6. 　前記拡散抑制層を構成する材料は、前記第１封止層を構成する樹脂よりも２５℃～９０℃における分子間空隙サイズが小さい、請求項４に記載の太陽電池モジュール。
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