WO2015188415A1 - 基板前处理方法及装置 - Google Patents

基板前处理方法及装置 Download PDF

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Publication number
WO2015188415A1
WO2015188415A1 PCT/CN2014/081439 CN2014081439W WO2015188415A1 WO 2015188415 A1 WO2015188415 A1 WO 2015188415A1 CN 2014081439 W CN2014081439 W CN 2014081439W WO 2015188415 A1 WO2015188415 A1 WO 2015188415A1
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Prior art keywords
chamber
substrate
transfer chamber
transfer
loading
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PCT/CN2014/081439
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English (en)
French (fr)
Inventor
邹清华
吴聪原
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/426,971 priority Critical patent/US20160247700A1/en
Publication of WO2015188415A1 publication Critical patent/WO2015188415A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3304—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber characterised by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/811—Controlling the atmosphere during processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0466—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates

Definitions

  • the present invention relates to the field of fabrication of organic electroluminescent devices, and more particularly to a substrate pre-processing method and apparatus. Background technique
  • the organic electroluminescent device is a self-luminous device, which has the advantages of low voltage, wide viewing angle, fast response, and good temperature adaptability, and is a new generation display technology. From the molecular weight of the organic electroluminescent material used, Organic electroluminescent devices are classified into small molecule organic electroluminescent devices
  • OLED organic electroluminescent
  • PLED polymer electroluminescent devices
  • the OLED generally includes a substrate, an ITO transparent anode disposed on the substrate, a hole injection layer (HIL) disposed on the ITO transparent anode, a hole transport layer (HTL) disposed on the hole injection layer, and a hole.
  • EML emissive layer
  • ETL electron transport layer
  • EIL electron injection layer
  • the luminescent layer usually employs a host/guest doping system.
  • OLED devices are very sensitive to moisture and oxygen, so the degree of drying of the substrate is very critical.
  • the substrate (glass or plastic substrate) needs to be cleaned, baked, and UV treated before entering the coating machine.
  • UV treatment can improve the surface work function of ITO (indium tin oxide) to increase the hole injection ability; it can also remove the organic residue on the ITO surface.
  • ITO indium tin oxide
  • the substrate is processed by UV and then transferred to the loading chamber of the organic coating machine via the robot.
  • the robot can not be made hermetically sealed chamber, but a very high cleanliness atmosphere of air, humidity and the humidity inside the clean room outside the same, it is generally 55% 0
  • This process causes the substrate surface to re-adhesion of moisture
  • Another object of the present invention is to provide a substrate pretreatment device which is simple in structure, easy to operate, and advantageous in substrate pretreatment process optimization.
  • the present invention provides a substrate pretreatment method comprising the following steps: Step 1. Providing a substrate to be pretreated, a UV chamber, and a loading chamber;
  • Step 2 a transfer chamber is disposed between the UV chamber and the loading chamber to connect the UV chamber and the loading chamber, and a first closed door is disposed at a connection between the UV chamber and the transfer chamber, and a connection is made between the transfer chamber and the loading chamber. Second closed door;
  • Step 3 feeding the substrate to be processed into the UV chamber
  • Step 4 Close the UV chamber, and perform UV treatment after passing dry oxygen in the UV chamber; Step 5, after the UV treatment is finished, open the first closed door and send the substrate into the transfer chamber; Step 6. Completely enter the transfer chamber in the substrate Thereafter, closing the first closed door, opening the second closed door, and feeding the substrate into the loading chamber;
  • Step 7 After the substrate completely enters the loading chamber, close the second closed door and evacuate the loading chamber.
  • the step 7 evacuates the loading chamber until the vacuum reaches below E-4pa.
  • the transfer chamber forms a closed chamber after closing the first and second closed doors.
  • a transmission is provided in the transfer chamber for transferring the substrate.
  • the transmission is a drive roller.
  • An inlet door is provided on a side of the UV chamber away from the transfer chamber, and an outlet door is provided on a side of the loading chamber away from the transfer chamber for connection to the coater.
  • the substrate is an OLED substrate, and the pre-treatment is pre-coating treatment.
  • the present invention also provides a substrate pretreatment device comprising a UV chamber, a transfer chamber and a loading chamber, the transfer chamber being disposed between the UV chamber and the loading chamber, and providing a first closure at a junction between the UV chamber and the transfer chamber
  • the door is provided with a second closing door at a junction between the transfer chamber and the loading chamber, the transfer chamber forming a closed chamber after closing the first and second closing doors.
  • a transmission is provided in the transfer chamber for transporting the substrate, and the transmission is a drive roller.
  • An inlet door is disposed on a side of the UV chamber away from the transfer chamber, and an exit door is disposed on a side of the load chamber away from the transfer chamber for connecting to a coating machine, the substrate is an OLED substrate, and the pre-treatment is before coating deal with.
  • the present invention also provides a substrate pretreatment device comprising a UV chamber, a transfer chamber and a loading chamber, the transfer chamber being disposed between the UV chamber and the loading chamber, and providing a first closure at a junction between the UV chamber and the transfer chamber a door, a second closed door is provided at a junction between the transfer chamber and the load chamber, the transfer chamber Forming a closed chamber after closing the first and second closed doors;
  • the transmission chamber is provided with a transmission device for conveying the substrate, and the transmission device is a transmission roller;
  • An inlet door is disposed on a side of the UV chamber away from the transfer chamber, and an exit door is disposed on a side of the load chamber away from the transfer chamber for connecting to a coating machine, the substrate is an OLED substrate, and the pre-treatment is before coating deal with.
  • a substrate pretreatment method and a substrate pretreatment device use a sealed transfer chamber to connect a UV chamber and a loading chamber, so that the substrate is subjected to UV treatment without passing through an air atmosphere.
  • the transfer chamber directly enters the loading chamber so that the substrate no longer adsorbs moisture after UV treatment, thereby saving the baking time of the loading chamber, shortening the tact time, and improving the performance and life of the OLED device.
  • the substrate pretreatment device has a simple structure and is easy to operate, and is advantageous for optimizing the substrate pretreatment process.
  • FIG. 1 is a flow chart of a method for pre-processing a substrate according to the present invention
  • FIG. 2 is a perspective view of a substrate pretreatment device of the present invention
  • FIG. 3 is a top plan view of a substrate pretreatment apparatus of the present invention. detailed description
  • the present invention provides a substrate pre-processing method, including the following steps: Step 1. Providing a substrate 10 to be pre-processed, a UV chamber 20, and a loading chamber 60;
  • the substrate 10 is an OLED substrate, and the pre-treatment is pre-coating treatment.
  • Step 2 a transfer chamber 40 is disposed between the UV chamber 20 and the load chamber 60 to connect the UV chamber 20 and the load chamber 60, and a first closed door 24 is disposed at a junction between the UV chamber 20 and the transfer chamber 40.
  • a second closing door 62 is disposed at a junction between the chamber 40 and the loading chamber 60; the transfer chamber 40 forms a closed chamber after closing the first closing door 24 and the second closing door 62;
  • a transmission 42 is provided in the transfer chamber 40 for transporting the substrate 10; the transmission 42 is a drive roller.
  • Step 3 the substrate 10 to be pretreated is sent to the UV chamber 20;
  • Step 4 closing the UV chamber 20, passing dry oxygen in the UV chamber 20, and then performing UV treatment.
  • Step 5 After the UV treatment is finished, the first closed door 24 is opened, and the substrate 10 is sent to the transfer chamber.
  • Step 6 after the substrate 10 completely enters the transfer chamber 40, the first closed door 24 is closed, the second closed door 62 is opened, and the substrate 10 is fed into the loading chamber 60;
  • Step 7 After the substrate 10 completely enters the loading chamber 60, the second closing door 62 is closed, and the loading chamber 60 is evacuated; when the vacuum degree of the loading chamber 60 reaches E-4pa or less, the substrate 10 is sent to the coating machine (not Icon
  • An inlet door 22 is disposed on a side of the UV chamber 20 away from the transfer chamber 40, and an exit door 64 is disposed on a side of the loading chamber 60 away from the transfer chamber 40 for connection to a coating machine (not shown in the drawing)
  • the present invention also provides a substrate pre-processing apparatus for performing pre-coating processing on the substrate 10, including a UV chamber 20, a transfer chamber 40, and a loading chamber 60.
  • the transfer chamber 40 is disposed in the UV chamber 20 and the loading chamber 60.
  • a first closing door 24 is provided between the UV chamber 20 and the transfer chamber 40, and a second closing door 62 is provided at the junction between the transfer chamber 40 and the loading chamber 60, and the transfer chamber 40 is closed.
  • a closed door 24 and a second closed door 62 form a closed chamber.
  • the substrate 10 is an OLED substrate.
  • a transmission 42 is disposed in the transfer chamber 40 for transferring the substrate 10, the transmission 42 is a drive roller.
  • An inlet door 22 is provided on a side of the UV chamber 20 remote from the transfer chamber 40, and an outlet door 64 is provided on a side of the loading chamber 60 remote from the transfer chamber 40 for connection to a coating machine (not shown).
  • the substrate 10 to be pretreated is sent to the UV chamber 20; the UV chamber 20 is closed, and the dry oxygen is introduced into the UV chamber 20 to perform UV treatment; after the UV treatment is finished, the first closed door 24 is opened.
  • the transmission device 42 feeds the substrate 10 into the transfer chamber 40; after the substrate 10 has completely entered the transfer chamber 40, the first closed door 24 is closed, the second closed door 62 is opened, the substrate 10 is fed into the loading chamber 60, and the substrate 10 is completely entered.
  • the second closing door 62 is closed, and the loading chamber 60 is evacuated; when the vacuum degree of the loading chamber 60 reaches E-4pa or less, the substrate 10 is fed into the coating film.
  • the present invention provides a substrate pre-processing method and a substrate pre-processing apparatus that connect a UV chamber and a loading chamber by a closed transfer chamber, so that the substrate does not pass through an air atmosphere after being subjected to UV treatment, and is sealed.
  • the transfer chamber directly enters the load chamber, so that the substrate no longer adsorbs moisture after UV treatment, thereby saving the baking time of the load chamber, shortening the tact time, and improving the performance and life of the OLED device.
  • the substrate pretreatment device has a simple structure and is easy to operate, and is advantageous for optimizing the substrate pretreatment process.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种基板前处理方法及装置，处理方法包括如下步骤：步骤1、提供待前处理的基板（10）、UV室（20）及装载室（60）；步骤2、在UV室与装载室之间设置传递室（40）连接UV室与装载室，在UV室与传递室之间连接处设置第一封闭门（24），在传递室与装载室之间连接处设置第二封闭门（62）；传递室在关闭第一与第二封闭门后形成密闭室；步骤3、将待前处理的基板送入UV室；步骤4、关闭UV室，在UV室内通入干燥的氧气后进行UV处理；步骤5、UV处理结束后，打开第一封闭门，将基板送入传递室；步骤6、在基板完全进入传递室后，关闭第一封闭门，打开第二封闭门，将基板送入装载室；步骤7、在基板完全进入装载室后，关闭第二封闭门，对装载室抽真空。还提供一种基板前处理装置。在UV室与装载室之间设置传递室，这样基板在经UV处理后无需经过空气气氛，通过密闭的传递室直接进入装载室，避免粘附水分，提高OLED器件的性能和寿命。

Description

基板前处理方法及装置 技术领域
本发明涉及有机电致发光器件制作领域，尤其涉及一种基板前处理方 法及装置。 背景技术
有机电致发光器件是一种自发光器件，具有电压低，视角宽、 响应速 度快、 温度适应性好等优势，是新一代的显示技术，从使用的有机电致发 光材料的分子量来看，有机电致发光器件分为小分子有机电致发光器件
( OLED )和高分子电致发光器件 (PLED) ,由于分子量的不同，有机电致发 光器件的制程也有很大的区别， OLED主要通过热蒸镀方式制备， PLED通 过旋涂或者喷墨打印方式制备。
OLED通常包括：基板、 置于基板上的 ITO透明阳极、 置于 ITO透明 阳极上的空穴注入层 (HIL)、 置于空穴注入层上的空穴传输层 (HTL)、 置于 空穴传输层上的发光层 (EML)、 置于发光层上的电子传输层 (ETL)、 置于电 子传输层上的电子注入层 (EIL)以及置于电子注入层上的阴极。为了提高效 率，发光层通常采用主 /客体掺杂系统。 OLED器件对水分和氧气非常敏感，故基板的干燥程度非常关键，即 使基板上残留极微量的水分，在 OLED器件制备完成后， 7 分会破坏器件， 特别是在通电流的情况下，水分会与有机材料进行电化学反应，破坏材料 的结构，影响有机材料的光电性能，从而使 OLED器件劣化，寿命降低。
现行的 OLED基板前处理制程中，基板 (玻璃或者塑料基板）在进入 镀膜机前需要进行清洗、烘烤、 UV处理。其中 UV处理可以提高 ITO (氧 化铟锡）的表面功函数，以增加空穴的注入能力；亦可以去除 ITO表面的 有机残留物。 但由于现有的前处理阶段的各个设备均使用同一个 robot (自 动执行工作的机器装置 ) ,基板通过 UV处理后，经 robot传递到有机镀膜 机的装载室。 由于这个 robot腔室无法做成密闭状态，只是一个洁净度非常 高的空气气氛，内部的湿度与外界无尘室的湿度一样，一般是 55%0 故这 一过程会使基板表面重新粘附水分，即使现行的装载室具有加热功能，但 是却无法完全烘干水分，且烘干水分需要较长的时间，延长了 tact time (流 片时间，即生产线上从第一张基板放入（或流出）流水线至第二张基板放 入（或流出）流水线中间间隔的时间)。 发明内容
本发明的目的在于提供一种基板前处理方法，使基板在 UV处理后无 需经过空气气氛，避免了粘附水分，节省装载室烘烤时间，缩短 tact time , 并且提高 OLED器件的性能和寿命。
本发明的另一目的在于提供一种基板前处理装置，其结构简单，易于 操作，有利于基板前处理制程优化。
为实现上述目的，本发明供一种基板前处理方法，包括如下步骤： 步骤 1、 提供待前处理的基板、 UV室及装载室；
步骤 2、 在 UV室与装载室之间设置一传递室连接该 UV室与装载室， 在 UV室与传递室之间连接处设置第一封闭门，在传递室与装载室之间连 接处设置第二封闭门；
步骤 3、 将待前处理的基板送入 UV室；
步骤 4、 关闭 UV室，在 UV室内通入干燥的氧气后进行 UV处理； 步骤 5、 UV处理结束后，打开第一封闭门，将基板送入传递室； 步骤 6、在基板完全进入传递室后，关闭第一封闭门，打开第二封闭门， 将基板送入装载室；
步骤 7、在基板完全进入装载室后，关闭第二封闭门，对装载室抽真空。 所述步骤 7对装载室抽真空直至真空度达到 E-4pa以下。
所述传递室在关闭第一与第二封闭门后形成密闭室。 所述传递室内设有传动装置以用于传送基板。
所述传动装置为传动滚筒。
所述 UV室远离传递室的一侧设有入口门，所述装载室远离传递室的 一侧设有出口门以用于连接镀膜机。
所述基板为 OLED基板，所述前处理为镀膜前处理。
本发明还提供一种基板前处理装置，包括 UV室、 传递室及装载室， 所述传递室设于 UV室与装载室之间 ,且在 UV室与传递室之间连接处设置 第一封闭门，在传递室与装载室之间连接处设置第二封闭门，所述传递室 在关闭第一与第二封闭门后形成密闭室。
所述传递室内设有传动装置以用于传送基板，所述传动装置为传动滚 筒。
所述 UV室远离传递室的一侧设有入口门，所述装载室远离传递室的 一侧设有出口门以用于连接镀膜机，所述基板为 OLED基板，所述前处理 为镀膜前处理。
本发明还提供一种基板前处理装置，包括 UV室、 传递室及装载室， 所述传递室设于 UV室与装载室之间 ,且在 UV室与传递室之间连接处设置 第一封闭门，在传递室与装载室之间连接处设置第二封闭门，所述传递室 在关闭第一与第二封闭门后形成密闭室；
所述传递室内设有传动装置以用于传送基板，所述传动装置为传动滚 筒；
所述 UV室远离传递室的一侧设有入口门，所述装载室远离传递室的 一侧设有出口门以用于连接镀膜机，所述基板为 OLED基板，所述前处理 为镀膜前处理。
本发明的有益效果：本发明提供的一种基板前处理方法及基板前处理 装置，利用一个密闭的传递室连接 UV室和装载室，使基板在经 UV处理后 无需经过空气气氛，通过该密闭的传递室直接进入装载室，从而基板在经 UV处理后，不再吸附水分，从而节省装载室的烘烤时间，缩短 tact time , 并且提高 OLED器件的性能和寿命。 所述基板前处理装置结构简单，易于 操作，有利于基板前处理制程优化。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本 发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发 明加以限制。 附图说明
下面结合附图和实施例对发明的技术方案做进一步的详细描述 图 1为本发明基板前处理方法的流程图；
图 2为本发明基板前处理装置的立体图；
图 3为本发明基板前处理装置的俯视图。 具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明 的优选实施例及其附图进行详细描述。
请参阅图 1-3 ,本发明提供一种基板前处理方法，包括如下步骤： 步骤 1、 提供待前处理的基板 10、 UV室 20及装载室 60；
所述基板 10为 OLED基板，所述前处理为镀膜前处理。
步骤 2、 在 UV室 20与装载室 60之间设置一传递室 40以连接该 UV 室 20与装载室 60 ,在 UV室 20与传递室 40之间连接处设置第一封闭门 24 ,在传递室 40与装载室 60之间连接处设置第二封闭门 62；所述传递室 40在关闭第一封闭门 24与第二封闭门 62后形成密闭室；
所述传递室 40内设有传动装置 42以用于传送基板 10；所述传动装置 42为传动滚筒。
步骤 3、 将待前处理的基板 10送入 UV室 20；
步骤 4、 关闭 UV室 20 ,在 UV室 20内通入干燥的氧气后进行 UV处 理；
步骤 5、 UV处理结束后，打开第一封闭门 24 ,将基板 10送入传递室
40；
步骤 6、 在基板 10完全进入传递室 40后，关闭第一封闭门 24 ,打开 第二封闭门 62 ,将基板 10送入装载室 60；
步骤 7、 在基板 10完全进入装载室 60后，关闭第二封闭门 62 ,对装 载室 60抽真空；当装载室 60的真空度达到 E-4pa以下时 '基板 10被送入 镀膜机 (未图示
所述 UV室 20远离传递室 40的一侧设有入口门 22 ,所述装载室 60远 离传递室 40的一侧设有出口门 64以用于连接镀膜机 (未图示 请参阅图 2-3 ,本发明还提供一种基板前处理装置，用于对基板 10进行镀膜前处理， 包括 UV室 20、传递室 40及装载室 60 ,所述传递室 40设于 UV室 20与装 载室 60之间，且在 UV室 20与传递室 40之间连接处设置第一封闭门 24 , 在传递室 40与装载室 60之间连接处设置第二封闭门 62 ,所述传递室 40在 关闭第一封闭门 24与第二封闭门 62后形成密闭室。
所述基板 10为 OLED基板。
所述传递室 40内设有传动装置 42以用于传送基板 10 ,所述传动装置 42为传动滚筒。
所述 UV室 20远离传递室 40的一侧设有入口门 22 ,所述装载室 60远 离传递室 40的一侧设有出口门 64以用于连接镀膜机 (未图示
工作时，将待前处理的基板 10送入 UV室 20；关闭 UV室 20 ,在 UV 室 20内通入干燥的氧气后进行 UV处理； UV处理结束后，打开第一封闭 门 24 ,所述传动装置 42将基板 10送入传递室 40；在基板 10完全进入传 递室 40后，关闭第一封闭门 24 ,打开第二封闭门 62 ,将基板 10送入装载 室 60；在基板 10完全进入装载室 60后，关闭第二封闭门 62 ,对装载室 60 抽真空；当装载室 60的真空度达到 E-4pa以下时基板 10被送入镀膜抓未 图示
综上所述，本发明提供的一种基板前处理方法及基板前处理装置，利 用一个密闭的传递室连接 UV室和装载室 ,使基板在经 UV处理后无需经过 空气气氛，通过该密闭的传递室直接进入装载室，从而基板在经 UV处理 后，不再吸附水分，从而节省装载室的烘烤时间，缩短 tact time ,并且提高 OLED器件的性能和寿命。 所述基板前处理装置结构简单，易于操作，有 利于基板前处理制程优化。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形 都应属于本发明权利要求的保护范围。

Claims

杈 利 要 求
1、 一种基板前处理方法，包括如下步骤：
步骤 1、 提供待前处理的基板、 uv室及装载室；
步骤 2、 在 UV室与装载室之间设置一传递室连接该 UV室与装载室， 在 UV室与传递室之间连接处设置第一封闭门，在传递室与装载室之间连 接处设置第二封闭门；
步骤 3、 将待前处理的基板送入 UV室；
步骤 4、 关闭 UV室，在 UV室内通入干燥的氧气后进行 UV处理； 步骤 5、 UV处理结束后，打开第一封闭门，将基板送入传递室； 步骤 6、在基板完全进入传递室后，关闭第一封闭门，打开第二封闭门， 将基板送入装载室；
步骤 7、在基板完全进入装载室后，关闭第二封闭门，对装载室抽真空。
2、 如权利要求 1所述的基板前处理方法，其中，所述步骤 7对装载室 抽真空直至真空度达到 E-4pa以下。
3、 如权利要求 1所述的基板前处理方法，其中，所述传递室在关闭第 —与第二封闭门后形成密闭室。
4、 如权利要求 1所述的基板前处理方法，其中，所述传递室内设有传 动装置以用于传送基板。
5、 如权利要求 4所述的基板前处理方法，其中，所述传动装置为传动 滚筒。
6、 如权利要求 1所述的基板前处理方法，其中，所述 UV室远离传递 室的一侧设有入口门，所述装载室远离传递室的一侧设有出口门以用于连 接镀膜机。
7、 如权利要求 1所述的基板前处理方法，其中，所述基板为 OLED基 板，所述前处理为镀膜前处理。
8、 一种基板前处理装置，包括 UV室、 传递室及装载室，所述传递室 设于 UV室与装载室之间且在 UV室与传递室之间连接处设置第一封闭门， 在传递室与装载室之间连接处设置第二封闭门，所述传递室在关闭第一与 第二封闭门后形成密闭室。
9、 如权利要求 8所述的基板前处理装置，其中，所述传递室内设有传 动装置以用于传送基板，所述传动装置为传动滚筒。
10、 如权利要求 8所述的基板前处理装置，其中，所述 UV室远离传 递室的一侧设有入口门，所述装载室远离传递室的一侧设有出口门以用于 连接镀膜机，所述基板为 OLED基板，所述前处理为镀膜前处理。
11、 一种基板前处理装置，包括 uv室、 传递室及装载室，所述传递 室设于 UV室与装载室之间且在 UV室与传递室之间连接处设置第一封闭 门，在传递室与装载室之间连接处设置第二封闭门，所述传递室在关闭第 一与第二封闭门后形成密闭室；
其中，所述传递室内设有传动装置以用于传送基板，所述传动装置为 传动滚筒；
其中，所述 uv室远离传递室的一侧设有入口门，所述装载室远离传 递室的一侧设有出口门以用于连接镀膜机，所述基板为 OLED基板，所述 前处理为镀膜前处理。
PCT/CN2014/081439 2014-06-12 2014-07-02 基板前处理方法及装置 Ceased WO2015188415A1 (zh)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0859539A2 (en) * 1997-02-17 1998-08-19 TDK Corporation Organic electroluminescent display device, and method and system for making the same
CN1283952A (zh) * 1999-07-23 2001-02-14 株式会社半导体能源研究所 制造电致发光显示装置的方法和形成薄膜的装置
US20020187265A1 (en) * 2001-06-12 2002-12-12 Takao Mori Apparatus and method for manufacturing an organic electroluminescence display
CN1582070A (zh) * 2003-07-31 2005-02-16 株式会社半导体能源研究所 蒸发淀积容器和蒸发淀积装置
CN1928149A (zh) * 2005-09-06 2007-03-14 株式会社半导体能源研究所 沉积装置
KR20080074552A (ko) * 2007-02-09 2008-08-13 (주)올레돈 벨트형 증발장치를 이용한 플렉시블 유기소자와 조명용유기소자 생산용 제작 장치
CN101315971A (zh) * 2007-05-28 2008-12-03 株式会社丰田自动织机 有机el元件衬底预处理方法及有机el元件制造方法
US20120103254A1 (en) * 2010-11-02 2012-05-03 Canon Kabushiki Kaisha Thin-film formation system and organic el device manufacturing system

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07114232B2 (ja) * 1993-01-05 1995-12-06 日本電気株式会社 半導体ウェーハ処理装置及びその処理方法
US6019906A (en) * 1998-05-29 2000-02-01 Taiwan Semiconductor Manufacturing Company Hard masking method for forming patterned oxygen containing plasma etchable layer
MY141175A (en) * 2000-09-08 2010-03-31 Semiconductor Energy Lab Light emitting device, method of manufacturing the same, and thin film forming apparatus
US6770562B2 (en) * 2000-10-26 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus and film formation method
US8668422B2 (en) * 2004-08-17 2014-03-11 Mattson Technology, Inc. Low cost high throughput processing platform
JP5081516B2 (ja) * 2007-07-12 2012-11-28 株式会社ジャパンディスプレイイースト 蒸着方法および蒸着装置
JP4948587B2 (ja) * 2009-11-13 2012-06-06 東京エレクトロン株式会社 フォトレジスト塗布現像装置、基板搬送方法、インターフェイス装置
JP2014082407A (ja) * 2012-10-18 2014-05-08 Sharp Corp ウェットエッチング装置およびウェットエッチング方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0859539A2 (en) * 1997-02-17 1998-08-19 TDK Corporation Organic electroluminescent display device, and method and system for making the same
CN1283952A (zh) * 1999-07-23 2001-02-14 株式会社半导体能源研究所 制造电致发光显示装置的方法和形成薄膜的装置
US20020187265A1 (en) * 2001-06-12 2002-12-12 Takao Mori Apparatus and method for manufacturing an organic electroluminescence display
CN1582070A (zh) * 2003-07-31 2005-02-16 株式会社半导体能源研究所 蒸发淀积容器和蒸发淀积装置
CN1928149A (zh) * 2005-09-06 2007-03-14 株式会社半导体能源研究所 沉积装置
KR20080074552A (ko) * 2007-02-09 2008-08-13 (주)올레돈 벨트형 증발장치를 이용한 플렉시블 유기소자와 조명용유기소자 생산용 제작 장치
CN101315971A (zh) * 2007-05-28 2008-12-03 株式会社丰田自动织机 有机el元件衬底预处理方法及有机el元件制造方法
US20120103254A1 (en) * 2010-11-02 2012-05-03 Canon Kabushiki Kaisha Thin-film formation system and organic el device manufacturing system

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