WO2015168449A1 - Composition d'attaque sélective vis-à-vis du ni qui est compatible avec nige et ge - Google Patents

Composition d'attaque sélective vis-à-vis du ni qui est compatible avec nige et ge Download PDF

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Publication number
WO2015168449A1
WO2015168449A1 PCT/US2015/028593 US2015028593W WO2015168449A1 WO 2015168449 A1 WO2015168449 A1 WO 2015168449A1 US 2015028593 W US2015028593 W US 2015028593W WO 2015168449 A1 WO2015168449 A1 WO 2015168449A1
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WIPO (PCT)
Prior art keywords
ether
glycol
acid
composition
germanide
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PCT/US2015/028593
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English (en)
Inventor
Jeffrey A. Barnes
Emanuel I. Cooper
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Advanced Technology Materials, Inc.
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Publication of WO2015168449A1 publication Critical patent/WO2015168449A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide

Definitions

  • the present invention generally relates to a composition and process for the selective removal of metal relative to metal germanide and germanium layers. More specifically, the present invention relates to a composition and process for the selective removal of nickel relative to nickel germanide and Ge.
  • the compositions are formulated to be substantially compatible with other materials present on the microelectronic device (e.g., low-k dielectics, silicon nitride, etc.) and result in less etching of the metal germanide layer.
  • An approach for modifying the electronic properties of a semiconductor element is to deposit a metal over at least the particular semiconductor element.
  • the stack that includes the metal and the semiconductor material is then heated to produce a semiconductor-metal compound layer.
  • This layer has a lower resistivity than the resistivity of the starting semiconductor material and, thus, has a different work-function.
  • Unreacted metal is then removed from the substrate, such as selectively from the semiconductor-metal compound. Such a process leaves the semiconductor-metal compound layer intact and removes excess unreacted metal from the deposition and heating operations.
  • the semiconductor layers formed by such processes may be referred to as semiconductor metalide layers.
  • a semiconductor metalide layer that is obtained by selectively removing unreacted metal without performing any subsequent masking step to pattern the metalide layer is typically referred to as a self- aligned structure.
  • an additional heating step is performed to further reduce the resistivity of the semiconductor metalide layer, e.g., by changing the crystal phase of this layer.
  • Examples of such semiconductor-metal compounds are silicides.
  • Metal silicide thin films are commonly used in microelectronic circuits in a variety of applications, such as interconnects, contacts and for the formation of transistor gates.
  • titanium disilicide (TiSi 2 ), cobalt disilicide (CoSi 2 ), and/or nickel silicide (NiSi) are used in Ultra Large Scale Integration Semiconductor devices having submicron feature sizes.
  • silicide layers have a lower sheet resistance than the corresponding sheet resistance of the silicon from which they are formed.
  • germanium and SiGe are, for various MOS technologies, considered to be suitable replacements for silicon as the semiconductor material of choice to form substrates and/or gate electrodes.
  • Germanides e.g., compounds resulting from the reaction between germanium and a metal, such as Ni, are used to reduce the resistivity of source and drain regions, or to reduce the resistivity of gate electrodes and, thus, modify the work-function of the gate electrodes.
  • a metal layer e.g., a nickel layer
  • This nickel germanide layer may be located between germanium substances of the structure and source and drain metal contacts for purposes of reducing contact resistances between the germanium substances and these contacts.
  • the metal layer to form the germanide layer is deposited, the resulting metal germanide and silicide regions are annealed. Subsequently the structure is selectively wet etched with an etching fluid to remove the excess or unreacted metal regions (unreacted or excess nickel regions, for example) relative to the germanide layer and the unreacted germanium.
  • Germanium-based substances such as germanide films, germanium-doped regions and SiGe and elemental germanium substrates, may be highly susceptible to the etchant, or etching fluid, that is conventionally used to etch nickel.
  • a typical etching fluid for nickel contains an acid, such as sulfuric acid, and an oxidant, such as hydrogen peroxide or nitric acid, which are highly oxidizing in nature.
  • these etching fluids may be used in a standard silicon-based process, these etching fluids undesirably pit the metal germanide films and cause galvanic corrosion of germanium (Ge) when Ge or SiGe is exposed and coupled with nickel germanide (NiGe) or NiPtGe.
  • unreacted metal e.g., Ni
  • other layers e.g., metal germanide such as NiGe, germanium and/or SiGe
  • the present invention generally relates to a composition and process for the selective removal of metal relative to metal germanide, germanium, and/or SiGe layers. More specifically, the present invention relates to a composition and process for the selective removal of nickel relative to nickel germanide, Ge, and/or SiGe.
  • the compositions are formulated to be substantially compatible with other materials present on the microelectronic device and result in less pitting of the metal germanide layer as well as less galvanic corrosion of the germanium.
  • composition comprising at least two non-oxidizing acids and at least one solvent
  • the at least two non-oxidizing acids are selected from the group consisting of sulfonic acid, methanesulfonic acid, p-toluenesulfonic acid, hypophosphorous acid, sulfuric acid, phosphoric acid, hydrochloric acid, hydrobromic acid, hydroiodic acid, and combinations thereof.
  • a method of selectively removing unreacted metal material relative to metal germanide from a microelectronic device having same thereon comprising contacting the microelectronic device with a composition useful for the selective removal of unreacted metal material relative to metal germanide, said composition comprising at least two non-oxidizing acids and at least one solvent.
  • the present invention generally relates to a composition and process for the selective removal of metal relative to metal germanide, germanium, and/or SiGe layers. More specifically, the present invention relates to a composition and process for the selective removal of nickel relative to nickel germanide, Ge, and/or SiGe.
  • the compositions are formulated to be substantially compatible with other materials present on the microelectronic device (e.g., low-k dielectics, silicon nitride, etc.) and result in less pitting of the metal germanide layer as well as less galvanic corrosion of germanium.
  • compositions that substantially and selectively remove unreacted metal or metals from germanium layers, germanide and SiGe layers and/or dielectric layers without substantially adversely affecting those layers are disclosed.
  • selective removal of unreacted metal or “selective etching of unreacted metal,” and the like, refer to the substantial removal of such unreacted metal from a germanide layer without substantially affecting (etching) the germanide layer, the germanium layer, and/or the SiGe layer.
  • the term “substantial” or “substantially,” in reference to the removal (etching) of unreacted metal(s), means that more than 95% of the unreacted metal layer is removed, more than 98%> of the unreacted metal layer is removed, or 99% or more of the unreacted metal is removed.
  • the metal is nickel and the germanide is a nickel germanide.
  • microelectronic device corresponds to semiconductor substrates, flat panel displays, phase change memory devices, solar panels and other products including solar cell devices, photovoltaics, and microelectromechanical systems (MEMS), manufactured for use in microelectronic, integrated circuit, energy collection, or computer chip applications.
  • MEMS microelectromechanical systems
  • the "germanium” or “germanium regions” may be a bulk germanium wafer, a germanium-on-insulator (GO I) wafer in which case the layer is a germanium layer formed on a dielectric layer on top of the substrate, or may also be formed by selectively depositing germanium on a substrate.
  • the germanium can be a continuous layer that at least partially extends over the substrate or can be divided into separate regions. These regions can be insulated from other regions by field regions, wherein the field regions can be formed by etching grooves into the substrate and filling the grooves with a dielectric material, such as an oxide. This insulation method is also known as shallow-trench-insulation (STI).
  • STI shallow-trench-insulation
  • the "SiGe” corresponds to a silicon germanium alloy comprising about 30 wt % to about 80 wt% Ge.
  • the SiGe can be a continuous layer that at least partially extends over the substrate or can be divided into separate regions. These regions can be insulated from other regions by field regions, wherein the field regions can be formed by etching grooves into the substrate and filling the grooves with a dielectric material, such as an oxide.
  • a "non-oxidizing acid” corresponds to an acid that has a standard oxidation/reduction potential of less than about +0.25 V versus the standard hydrogen electrode.
  • non-oxidizing acids include sulfuric acid, hydrochloric acid, phosphoric and phosphonic acids, and most organic (e.g., carboxylic) acids, but not nitric or any "halate” acids (i.e., halogen + oxygen such as iodate, perchlorate, hypochlorite etc.).
  • low-k dielectric material corresponds to any material used as a dielectric material in a layered microelectronic device, wherein the material has a dielectric constant less than about 3.5.
  • the low-k dielectric materials include low-polarity materials such as silicon-containing organic polymers, silicon-containing hybrid organic/inorganic materials, organosilicate glass (OSG), TEOS, fluorinated silicate glass (FSG), silicon dioxide, and carbon-doped oxide (CDO) glass. It is to be appreciated that the low-k dielectric materials may have varying densities and varying porosities.
  • phosphoric acid is understood to have the formula H 3 PO 4 and is also known as orthophosphoric acid.
  • substantially devoid is defined herein as less than 2 wt. %, preferably less than 1 wt. %, more preferably less than 0.5 wt. %, even more preferably less than 0.1 wt. %, and most preferably 0 wt%.
  • compositions described herein may be embodied in a wide variety of specific formulations, as hereinafter more fully described.
  • compositions wherein specific components of the composition are discussed in reference to weight percentage ranges including a zero lower limit, it will be understood that such components may be present or absent in various specific embodiments of the composition, and that in instances where such components are present, they may be present at concentrations as low as 0.001 weight percent, based on the total weight of the composition in which such components are employed.
  • concentrations as low as 0.001 weight percent, based on the total weight of the composition in which such components are employed.
  • a composition for selectively etching unreacted metal relative to metal germanide is described, wherein the composition does not substantially etch the metal germanide layer, low-k dielectric layer, silicon nitride layer, and/or STI material.
  • the composition selectively etches unreacted nickel relative to nickel germanide, wherein the composition does not substantially etch the nickel germanide layer, germanium, SiGe, low-k dielectric layers, and/or silicon nitride layers.
  • said composition comprises, consists of, or consists essentially of at least two non-oxidizing acids and at least one solvent.
  • said composition comprises, consists of, or consists essentially of at least three non-oxidizing acids and at least one solvent.
  • said composition comprises, consists of, or consists essentially of phosphoric acid, one of sulfuric acid or hydrochloric acid, and at least one solvent.
  • said composition comprises, consists of, or consists essentially of phosphoric acid, one of sulfuric acid or hydrochloric acid, and water.
  • said composition comprises, consists of, or consists essentially of sulfuric acid, hydrochloric acid, phosphoric acid, and at least one solvent.
  • said composition comprises, consists of, or consists essentially of sulfuric acid, hydrochloric acid, phosphoric acid, and water.
  • said composition comprises, consists of, or consists essentially of sulfuric acid, hydrochloric acid, and phosphoric acid, wherein the composition is substantially devoid of added water.
  • the non-oxidizing acids are present to principally dissolve the unreacted metal, i.e., nickel.
  • Non- oxidizing acids contemplated herein include, but are not limited to, sulfonic acid, methanesulfonic acid, p- toluenesulfonic acid, hypophosphorous acid, sulfuric acid, phosphoric acid, hydrochloric acid, hydrobromic acid, hydroiodic acid, and combinations thereof.
  • the non-oxidizing acids comprise two or more of sulfuric acid, phosphoric acid, and hydrochloric acid.
  • HBr and/or HI is preferred when the removal selectivity of metal (i.e., Ni) relative to metal germanide (i.e., NiGe) is less important (e.g., when it is desired to remove the metal and metal germanide at substantially the same rate or to remove the metal germanide at a rate higher than the rate of removal of the metal).
  • the at least one solvent comprises water.
  • the amount of solvent in the composition is preferably in a range from about 10 wt% to about 99.9 wt.%, more preferably in a range from about 50 wt.% to about 99.9 wt.%, and most preferably in a range from about 90 wt.% to about 99.9 wt.%.
  • An optional component of the compositions described herein is at least one passivation agent for the germanium and metal germanide, i.e., nickel germanide, species.
  • Passivation agents can include, but are not limited to, ascorbic acid, L(+)-ascorbic acid, isoascorbic acid, ascorbic acid derivatives, boric acid, ammonium biborate, borate salts (e.g., ammonium pentaborate, sodium tetraborate, and ammonium biborate), sodium bromide, potassium bromide, rubidium bromide, magnesium bromide, calcium bromide, ammonium bromides having the formula NR ⁇ R ⁇ Br, wherein R 1 , R 2 , R 3 and R 4 can be the same as or different from one another and are selected from the group consisting of hydrogen and branched or straight-chained Ci-C6 alkyls (e.g., methyl, ethyl, propyl, butyl, penty
  • compositions of the first aspect have pH in a range from less than 0 to about 3, preferably less than 0 to about 2. Further, the compositions of the first aspect are preferably substantially devoid of chemical mechanical polishing abrasive; oxidizing agents including, but not limited to, hydrogen peroxide, other peroxides, nitric acid and salts thereof, salts of copper, salts of iron, bromates, and metal oxides; halate acids (i.e., halogen + oxygen such as iodate, perchlorate, hypochlorite etc.); carboxylic acid or carboxylate complexing agents; sulfur compounds with an oxidation state between -2 and +5 (e.g., thiosulfate, sulfide, sulfite, bisulfite, metabisulfite, phosphorus pentasulfide); fluoride-containing sources; and combinations thereof.
  • oxidizing agents including, but not limited to, hydrogen peroxide, other peroxides, nitric acid
  • the composition comprises, consists of, or consists essentially of phosphoric acid, one of sulfuric acid or hydrochloric acid, and at least one solvent, present in the following ranges, based on the total weight of the composition:
  • Component % by weight more preferred % most preferred % by weight by weight phosphoric acid (86%) about 1 wt% to about 2 wt% to about 4 wt% to about 20 wt% about 15 wt% about 12 wt% sulfuric acid (cone) or about 0.1 wt% to about 0.5 wt% to about 1 wt% to hydrochloric acid (37%) about 15 wt% about 12 wt% about 10 wt% solvent(s) about 65 to about about 73 to about about 78 to about
  • Component % by weight more preferred % most preferred % by weight by weight phosphoric acid (86%) about 1 wt% to about 2 wt% to about 4 wt% to about 20 wt% about 15 wt% about 12 wt% sulfuric acid (cone) about 0.1 wt% to about 0.5 wt% to about 1 wt% to about 10 wt% about 8 wt% about 5 wt% hydrochloric acid (37%) about 0.1 wt% to about 0.5 wt% to about 1 wt% to about 10 wt% about 8 wt% about 6 wt% solvent(s) about 60 to about about 69 to about about 77 to about
  • the composition comprises, consists of, or consists essentially of phosphoric acid, sulfuric acid, and hydrochloric acid, wherein the composition is substantially devoid of added water, present in the following ranges, based on the total weight of the composition:
  • sulfuric acid (cone) about 2 wt% to about 5 wt% to
  • hydrochloric acid (37%) about 10 wt% to about 15 wt% to
  • the compositions of the first aspect further include dissolved nickel ions, wherein the unreacted nickel is solubilized by the composition to yield said nickel ions.
  • the composition of the first aspect may include at least two non-oxidizing acids, at least one solvent, and nickel ions.
  • the composition of the first aspect may include phosphoric acid, at least one of hydrochloric acid and sulfuric acid, at least one solvent, and nickel ions.
  • the composition described herein is low cost, easily diluted, readily available in electronic grade, and selectively removes nickel relative to nickel germanide at low temperatures (e.g., 20-25°C) and hence can be reused without changing out the chemistry each time.
  • compositions of the first aspect described herein is easily formulated by simple addition of the respective ingredients and mixing to homogeneous condition.
  • the compositions may be readily formulated as single -package formulations or multi-part formulations that are mixed at or before the point of use, e.g., the individual parts of the multi-part formulation may be mixed at the tool or in a storage tank upstream of the tool.
  • concentrations of the respective ingredients may be widely varied in specific multiples of the composition, i.e., more dilute or more concentrated, and it will be appreciated that the compositions described herein can variously and alternatively comprise, consist or consist essentially of any combination of ingredients consistent with the disclosure herein. Dilution ratios may be in a range from about 0.1 part diluent: 1 part composition concentrate to about 100 parts diluent: 1 part composition concentrate.
  • the compositions for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), germanium, and/or SiGe from microelectronic devices having same thereon, the compositions typically are contacted with the device for a time of from about 10 sec to about 180 minutes, preferably about 1 minute to about 5 minutes, at temperature in a range of from about 15°C to about 100°C, preferably about 20°C to about 70°C.
  • Such contacting times and temperatures are illustrative, and any other suitable time and temperature conditions may be employed that are efficacious to at least partially remove the unreacted metal (e.g., unreacted nickel) from the device.
  • Such contacting times and temperatures are illustrative, and any other suitable time and temperature conditions may be employed that are efficacious to at least partially remove unreacted metal (e.g., unreacted nickel) from the device, within the broad practice of the method.
  • "At least partially remove” corresponds to the removal of at least 85 % of the unreacted metal (e.g., unreacted nickel), more preferably at least 90 %, even more preferably at least 95 %, and most preferred at least 99 %.
  • compositions of the first aspect selectively remove unreacted metal (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), germanium, and/or SiGe without substantially removing other materials present on the microelectronic device such as low-k dielectric materials, shallow trench isolation materials, and silicon nitride.
  • unreacted metal e.g., unreacted nickel
  • metal germanide e.g., NiGe
  • germanium e.g., germanium
  • SiGe silicon nitride
  • the composition may be readily removed from the device to which it has previously been applied, as may be desired and efficacious in a given end use application of the compositions described herein.
  • the rinse solution for the composition includes deionized water.
  • the device may be dried using nitrogen or a spin-dry cycle.
  • the microelectronic device comprises the germanide NiGe.
  • a still further aspect relates to methods of manufacturing an article comprising a microelectronic device, said method comprising contacting the microelectronic device with a composition for sufficient time to selectively remove unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), germanium, and SiGe from the microelectronic device, and incorporating said microelectronic device into said article, using a composition described herein.
  • the microelectronic device comprises comprises the germanide NiGe.
  • Another aspect relates to an article of manufacture comprising a composition, a microelectronic device wafer, and material selected from the group consisting of NiGe, Ni, Ge, SiGe, and combinations thereof, wherein the composition comprises at least two or three non-oxidizing acids and at least one solvent.
  • the composition comprises sulfuric acid, phosphoric acid, hydrochloric acid, and water.
  • resist and resist residue removal e.g., post-etch residue and/or post-ash residue
  • the low pH compositions described herein are effective at removing polymeric layers such as resist and polymeric-containing material such as resist residue. Accordingly, a method of removing polymeric material is described herein, said method comprising contacting a microelectronic device having the polymeric material thereon with a composition described herein at conditions useful to remove the polymer material from the surface of the microelectronic device.
  • Example 1 The features and advantages are more fully shown by the illustrative examples discussed below.
  • Formulations A-L were prepared and were tested using electrochemical methods to determine Ni corrosion in A/min using Tafel potentiodynamic plots, Ni:Ge corrosion in A/min using Tafel potentiodynamic plots, and Ni:NiGe selectivity at ambient temperature. The formulations and resulted are reported in Table 1.
  • Example 2 [0046] Formulations M-T were prepared and were tested using electrochemical methods to determine Ni corrosion in A/min, Ni:Ge corrosion in A/min, and Ni:NiGe selectivity at ambient temperature. The formulations and resulted are reported in Table 2.
  • Formulations U-V were prepared and were tested using electrochemical methods to determine Ni corrosion in A/min, Ni:Ge corrosion in A/min, and Ni:NiGe selectivity at ambient temperature. The formulations and resulted are reported in Table 3.
  • Formulations AA-00 were prepared and were tested using electrochemical methods to determine Ni corrosion in A/min at 20°C, Ni:Ge corrosion in A/min at 20°C, Ge corrosion in A/min at 25°C, and Ni:NiGe selectivity. The formulations and resulted are reported in Table 4.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

Cette invention concerne des compositions et des procédés d'élimination sélective de métal n'ayant pas réagi (p. ex., le nickel n'ayant pas réagi) par rapport au germaniure métallique (p. ex., NiGe), de dispositifs micro-électroniques sur lesquels ils se trouvent. Les compositions selon l'invention sont sensiblement compatibles avec d'autres matériaux présents sur le dispositif micro-électronique tels que le nitrure de silicium et les diélectriques peu potassiques.
PCT/US2015/028593 2014-05-01 2015-04-30 Composition d'attaque sélective vis-à-vis du ni qui est compatible avec nige et ge WO2015168449A1 (fr)

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US61/987,204 2014-05-01

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010004553A1 (en) * 1999-04-05 2001-06-21 Garry A. Mercaldi Method for etching doped polysilicon with high selectivity to undoped polysilicon
US20050196962A1 (en) * 2004-03-08 2005-09-08 Interuniversitair Microelektronica Centrum (Imec) Method for forming a self-aligned germanide and devices obtained thereof
US20120231632A1 (en) * 2011-03-11 2012-09-13 Fujifilm Corporation Novel Etching Composition
US20130130500A1 (en) * 2010-08-05 2013-05-23 Showa Denko K.K. Composition for removal of nickel-platinum alloy-based metals
US20130137210A1 (en) * 2010-02-05 2013-05-30 E I Du Pont De Nemours And Company Masking pastes and processes for manufacturing a partially transparent thin-film photovoltaic panel

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010004553A1 (en) * 1999-04-05 2001-06-21 Garry A. Mercaldi Method for etching doped polysilicon with high selectivity to undoped polysilicon
US20050196962A1 (en) * 2004-03-08 2005-09-08 Interuniversitair Microelektronica Centrum (Imec) Method for forming a self-aligned germanide and devices obtained thereof
US20130137210A1 (en) * 2010-02-05 2013-05-30 E I Du Pont De Nemours And Company Masking pastes and processes for manufacturing a partially transparent thin-film photovoltaic panel
US20130130500A1 (en) * 2010-08-05 2013-05-23 Showa Denko K.K. Composition for removal of nickel-platinum alloy-based metals
US20120231632A1 (en) * 2011-03-11 2012-09-13 Fujifilm Corporation Novel Etching Composition

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TW201546330A (zh) 2015-12-16

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