WO2015159727A1 - 焦点検出装置、電子機器 - Google Patents
焦点検出装置、電子機器 Download PDFInfo
- Publication number
- WO2015159727A1 WO2015159727A1 PCT/JP2015/060550 JP2015060550W WO2015159727A1 WO 2015159727 A1 WO2015159727 A1 WO 2015159727A1 JP 2015060550 W JP2015060550 W JP 2015060550W WO 2015159727 A1 WO2015159727 A1 WO 2015159727A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light shielding
- light
- shielding film
- shielding wall
- light receiving
- Prior art date
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 292
- 230000035945 sensitivity Effects 0.000 claims abstract description 109
- 238000012545 processing Methods 0.000 claims description 47
- 230000003247 decreasing effect Effects 0.000 claims description 6
- 238000003384 imaging method Methods 0.000 abstract description 81
- 238000000034 method Methods 0.000 abstract description 31
- 238000005516 engineering process Methods 0.000 description 23
- 230000000694 effects Effects 0.000 description 16
- 230000000875 corresponding effect Effects 0.000 description 14
- 230000008859 change Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 230000006870 function Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 239000011368 organic material Substances 0.000 description 6
- 239000002775 capsule Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 238000013500 data storage Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 210000001525 retina Anatomy 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000006059 cover glass Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000010408 sweeping Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 210000001508 eye Anatomy 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 210000005036 nerve Anatomy 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000000638 stimulation Effects 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 208000003098 Ganglion Cysts Diseases 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 208000005400 Synovial Cyst Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 210000005252 bulbus oculi Anatomy 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 210000002287 horizontal cell Anatomy 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 210000000608 photoreceptor cell Anatomy 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/28—Systems for automatic generation of focusing signals
- G02B7/34—Systems for automatic generation of focusing signals using different areas in a pupil plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B23/00—Telescopes, e.g. binoculars; Periscopes; Instruments for viewing the inside of hollow bodies; Viewfinders; Optical aiming or sighting devices
- G02B23/24—Instruments or systems for viewing the inside of hollow bodies, e.g. fibrescopes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
Definitions
- This technology relates to a focus detection device and an electronic device. Specifically, the present invention relates to a focus detection apparatus and an electronic device that detect a focus with higher accuracy.
- the autofocus method for digital cameras mainly includes a contrast method and a phase difference method.
- the contrast method is a method in which the lens is moved so that the point with the highest contrast is in focus.
- auto-focusing can be performed by reading a part of the image of the image sensor, and no other auto-focus optical system is required.
- the phase difference method is a method to which so-called triangulation technology is applied, and is a method for obtaining a distance by an angle difference when the same subject is viewed from two different points.
- images of light passing through different parts of the lens for example, light beams on the right and left sides of the lens are used.
- the phase difference method by measuring the distance, it is required how much the lens needs to be moved to the in-focus position.
- Image plane phase difference autofocus performs autofocus by phase difference method using an image sensor.
- the imaging element is provided with a condensing microlens, and an imaging element for phase difference autofocus can be obtained by adding a diaphragm member that restricts light incident on the microlens (for example, Patent Document 1).
- the phase difference method does not require time for moving the lens back and forth in order to find the focal position, so that high-speed autofocus can be realized.
- a diaphragm member that restricts light incident on the microlens for example, a light shielding film is provided, and the amount of light incident on the image sensor is limited, so that sensitivity is deteriorated. That is, in the image plane phase difference method, for example, the right and left light beams of the lens are used, and a part of the light incident on the lens is used, so that the amount of light incident on the imaging device is reduced and the sensitivity is deteriorated. Resulting in.
- the right and left lens beams are used, so that the light that has passed through the right side of the lens is incident on the right side imaging device and has passed through the left side of the lens.
- the light needs to be incident on the left image sensor.
- control is performed so that light that has passed through the left side of the lens does not enter the image sensor for the right side
- control is performed so that light that has passed through the right side of the lens does not enter the image sensor for the left side.
- Patent Document 1 the light passing through the left side of the lens is not incident on the right side image sensor, and the light passing through the right side of the lens is not incident on the left side image sensor.
- a reflecting plate is used and unnecessary light is reflected.
- the amount of light incident on the image sensor decreases, and the sensitivity deteriorates.
- the present technology has been made in view of such a situation, and enables a desired sensitivity to be obtained.
- a first focus detection device is provided with a microlens, a light receiving unit that receives light incident through the microlens, and the microlens and the light receiving unit, A light-shielding film that restricts the amount of light to the light-receiving unit and a light-shielding wall provided in a direction perpendicular to the light-shielding film are provided.
- the light shielding wall may be provided in an opening portion of the light shielding film.
- the light shielding wall may be provided on the microlens side of the light shielding film.
- the light shielding wall may be provided on the light receiving portion side of the light shielding film.
- the light shielding wall may be provided on the microlens side and the light receiving part side of the light shielding film, respectively.
- the microlens can be provided with a predetermined height.
- the light shielding wall has a predetermined height on the microlens side. It can be provided.
- the microlens can be provided with a predetermined height.
- the light receiving unit can be provided with a predetermined height.
- the light shielding wall has a predetermined height on the light receiving unit side. It can be provided.
- the light receiving unit can be provided with a predetermined height.
- the light shielding wall is separated from the microlens side of the light shielding film and the light receiving unit side. Further, each can be provided with a predetermined height.
- a second focus detection device is provided with a microlens, a light receiving unit that receives light incident through the microlens, and the microlens and the light receiving unit, And a plurality of light shielding films that limit the amount of light to the light receiving unit.
- the light reception of the light shielding film provided on the microlens side among the plurality of light shielding curtains can be made smaller than the amount of covering with respect to the light receiving portion of the light shielding film provided on the light receiving portion side.
- An electronic apparatus is provided between a microlens, a light receiving unit that receives light incident through the microlens, and the microlens and the light receiving unit.
- a light-shielding film that limits the amount of light; a light-shielding wall provided in a direction perpendicular to the light-shielding film; a detection unit that detects a focal point using a signal from the light-receiving unit; and the light-receiving without the light-shielding film
- a signal processing unit that performs signal processing on a signal output from the unit.
- a third focus detection device is provided between a lens array having a plurality of lenses, a light receiving unit having a plurality of light receiving pixels, and the lens array and the light receiving unit in a first direction.
- the lens array includes a first lens and a second lens
- the light receiving unit includes a first light receiving pixel facing the first lens, and the second lens.
- a second projecting region projecting in the first direction is provided between a lens array having a plurality of lenses, a light receiving unit having a plurality of light receiving pixels, and the lens array and the light receiving unit in a first direction.
- the lens array includes a first lens and a second lens
- the light receiving unit includes a first light receiving pixel facing the first lens, and the second lens.
- the light shielding portion includes a light shielding film that overlaps the first lens and the second lens, a first light shielding wall that extends in the first direction in the first projecting region, and the second projecting region. And a second light shielding wall extending in the first direction.
- the first light shielding wall and the second light shielding wall may be thicker than the light shielding film.
- the microlens, the light receiving unit that receives light incident through the microlens, and the microlens and the light receiving unit are provided.
- the microlens, the light receiving unit that receives light incident through the microlens, and the microlens and the light receiving unit are provided to the light receiving unit. And a plurality of light shielding films for limiting the amount of light.
- the lens array having a plurality of lenses, the light receiving unit having a plurality of light receiving pixels, and the lens array and the light receiving unit in the first direction are provided.
- the lens array includes a first lens and a second lens, and the light receiving unit includes a first light receiving pixel facing the first lens and a second light receiving pixel facing the second lens.
- the light-shielding portion overlaps the first lens and protrudes in the first direction, and the second lens overlaps the second lens and protrudes in the first direction. And a protruding region.
- An electronic apparatus includes the focus detection device.
- desired sensitivity can be obtained.
- Image plane phase difference autofocus is an image capture unit (such as an imaging device such as a digital still camera or a video camera, a portable terminal device having an imaging function such as a mobile phone, or a copier using the imaging device for an image reading unit).
- the present invention can be applied to all electronic devices using a semiconductor package for the photoelectric conversion unit.
- FIG. 1 is a block diagram illustrating an example of a configuration of an electronic apparatus according to the present technology, for example, an imaging apparatus.
- an imaging apparatus 10 includes an optical system including a lens group 21 and the like, a solid-state imaging device (imaging device) 22, a DSP (Digital Signal Processor) circuit 23, a frame memory 24, and a display unit 25.
- the DSP circuit 23, the frame memory 24, the display unit 25, the recording unit 26, the operation unit 27, and the power supply unit 28 are connected to each other via a bus line 29.
- the lens group 21 takes in incident light (image light) from a subject and forms an image on the imaging surface of the solid-state imaging device 22.
- the solid-state imaging device 22 converts the amount of incident light imaged on the imaging surface by the lens group 21 into an electrical signal for each pixel and outputs the electrical signal as a pixel signal.
- the DSP circuit 23 processes a signal from the solid-state image sensor 22.
- the solid-state imaging device 22 has pixels for detecting a focus, and processes a signal from such a pixel to detect a focus.
- the solid-state imaging device 22 includes pixels for constructing an image of a photographed subject, and performs processing such as processing a signal from such a pixel and developing it in the frame memory 24.
- the display unit 25 includes a panel type display device such as a liquid crystal display device or an organic EL (electroluminescence) display device, and displays a moving image or a still image captured by the solid-state image sensor 22.
- the recording unit 26 records a moving image or a still image captured by the solid-state imaging device 22 on a recording medium such as a video tape or a DVD (Digital Versatile Disk).
- the operation unit 27 issues operation commands for various functions of the imaging apparatus under operation by the user.
- the power supply unit 28 appropriately supplies various power sources serving as operation power sources for the DSP circuit 23, the frame memory 24, the display unit 25, the recording unit 26, and the operation unit 27 to these supply targets.
- the imaging apparatus having the above-described configuration can be used as an imaging apparatus such as a video camera, a digital still camera, and a camera module for mobile devices such as a mobile phone.
- a semiconductor package including phase difference detection pixels described below can be used as the solid-state imaging element 22.
- FIG. 2 is a diagram showing a configuration of the solid-state imaging device 22, and is a system configuration diagram showing an outline of a configuration of a CMOS image sensor which is a kind of XY address type imaging device, for example.
- the CMOS image sensor is an image sensor created by applying or partially using a CMOS process.
- the CMOS image sensor 100 in FIG. 2 includes a pixel array unit 111 formed on a semiconductor substrate (not shown) and a peripheral circuit unit integrated on the same semiconductor substrate as the pixel array unit 111.
- the peripheral circuit unit includes, for example, a vertical drive unit 112, a column processing unit 113, a horizontal drive unit 114, and a system control unit 115.
- the CMOS image sensor 100 further includes a signal processing unit 118 and a data storage unit 119.
- the signal processing unit 118 and the data storage unit 119 may be mounted on the same substrate as the CMOS image sensor 100, or may be disposed on a different substrate from the CMOS image sensor 100.
- Each processing of the signal processing unit 118 and the data storage unit 119 may be processing by an external signal processing unit provided on a substrate different from the CMOS image sensor 100, for example, a DSP (Digital Signal Processor) circuit or software. Absent.
- DSP Digital Signal Processor
- the pixel array unit 111 includes unit pixels (hereinafter also simply referred to as “pixels”) having a photoelectric conversion unit that generates and accumulates photoelectric charges according to the received light amount in the row direction and the column direction, that is, The configuration is two-dimensionally arranged in a matrix.
- the row direction refers to the pixel arrangement direction (that is, the horizontal direction) of the pixel row
- the column direction refers to the pixel arrangement direction (that is, the vertical direction) of the pixel column.
- pixel drive lines 116 are wired along the row direction for each pixel row, and vertical signal lines 117 are wired along the column direction for each pixel column, in a matrix-like pixel arrangement. .
- the pixel drive line 116 transmits a drive signal for driving when reading a signal from the pixel.
- the pixel drive line 116 is shown as one wiring, but the number is not limited to one.
- One end of the pixel drive line 116 is connected to an output end corresponding to each row of the vertical drive unit 112.
- the vertical drive unit 112 is configured by a shift register, an address decoder, and the like, and drives each pixel of the pixel array unit 111 at the same time or in units of rows. That is, the vertical driving unit 112 constitutes a driving unit that drives each pixel of the pixel array unit 111 together with the system control unit 115 that controls the vertical driving unit 112.
- the vertical drive unit 112 is not shown in the figure for its specific configuration, but generally has a configuration having two scanning systems, a reading scanning system and a sweeping scanning system.
- the readout scanning system sequentially selects and scans the unit pixels of the pixel array unit 111 in units of rows in order to read out signals from the unit pixels.
- the signal read from the unit pixel is an analog signal.
- the sweep-out scanning system performs sweep-out scanning with respect to the readout row on which the readout scanning is performed by the readout scanning system, preceding the readout scanning by the time corresponding to the shutter speed.
- This sweep-out scanning by the sweep-out scanning system resets the photoelectric conversion unit by sweeping unnecessary charges from the photoelectric conversion unit of the unit pixel in the readout row.
- the sweeping scanning system sweeps out (resets) unnecessary charges, so that a so-called electronic shutter operation is performed.
- the electronic shutter operation refers to an operation in which the photoelectric charge of the photoelectric conversion unit is discarded and exposure is newly started (photocharge accumulation is started).
- the signal read out by the readout operation by the readout scanning system corresponds to the amount of light received after the immediately preceding readout operation or electronic shutter operation.
- the period from the read timing by the immediately preceding read operation or the sweep timing by the electronic shutter operation to the read timing by the current read operation is the photo charge exposure period in the unit pixel.
- a signal output from each unit pixel of the pixel row selectively scanned by the vertical driving unit 112 is input to the column processing unit 13 through each of the vertical signal lines 117 for each pixel column.
- the column processing unit 113 performs predetermined signal processing on signals output from the pixels in the selected row through the vertical signal line 117 for each pixel column of the pixel array unit 111, and temporarily outputs the pixel signals after the signal processing. Hold on.
- the column processing unit 113 performs at least noise removal processing, for example, CDS (Correlated Double Sampling) processing as signal processing.
- CDS Correlated Double Sampling
- the CDS processing by the column processing unit 113 removes pixel-specific fixed pattern noise such as reset noise and threshold variation of amplification transistors in the pixel.
- the column processing unit 113 may have, for example, an AD (analog-digital) conversion function to convert an analog pixel signal into a digital signal and output the digital signal.
- AD analog-digital
- the horizontal driving unit 114 includes a shift register, an address decoder, and the like, and sequentially selects unit circuits corresponding to the pixel columns of the column processing unit 113. By the selective scanning by the horizontal driving unit 114, pixel signals that are signal-processed for each unit circuit in the column processing unit 113 are sequentially output.
- the system control unit 115 includes a timing generator that generates various timing signals, and the vertical driving unit 112, the column processing unit 113, and the horizontal driving unit 114 based on various timings generated by the timing generator. Drive control is performed.
- the signal processing unit 118 has at least an arithmetic processing function, and performs various signal processing such as arithmetic processing on the pixel signal output from the column processing unit 113.
- the data storage unit 119 temporarily stores data necessary for the signal processing in the signal processing unit 118.
- FIG. 3 is a cross-sectional view schematically showing a basic configuration of a semiconductor package constituting the CMOS image sensor 100 of FIG. 2 which is an imaging device to which the present technology is applied.
- the semiconductor package 200 in FIG. 3 constitutes a backside illuminated CMOS image sensor.
- the wiring layer 212 made of SiO 2 is formed on the support substrate 211, and the silicon substrate 213 is formed on the wiring layer 212.
- the support substrate 211 silicon, glass epoxy, glass, plastic, or the like is used.
- a plurality of photodiodes 214 (optical elements) as photoelectric conversion portions of the respective pixels are formed at predetermined intervals.
- a protective film 215 made of SiO 2 is formed on the silicon substrate 213 and the photodiode 214.
- a light shielding film 216 for preventing light from leaking into adjacent pixels is formed between adjacent photodiodes 214.
- a flattening film 217 for flattening a region for forming the color filter is formed on the protective film 215 and the light shielding film 216.
- a color filter layer 218 is formed on the planarizing film 217.
- the color filter layer 218 is provided with a plurality of color filters for each pixel, and the colors of the color filters are arranged according to, for example, a Bayer array.
- a first organic material layer 219 is formed on the color filter layer 218, a first organic material layer 219 is formed.
- an acrylic resin material, a styrene resin material, an epoxy resin material, or the like is used for the first organic material layer 219.
- a micro lens 220 is formed on the first organic material layer 219.
- the microlens 220 is provided over a substrate having a plurality of layers including the photodiode 214.
- a microlens for collecting light on the photodiode 214 of each pixel is formed for each pixel.
- the microlens 220 is an inorganic material layer, and SiN, SiO, SiOxNy (where 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1) is used.
- a cover glass 221 is bonded to the upper part of the microlens 220 via a second organic material layer 222.
- the cover glass 221 is not limited to glass, and a transparent plate such as a resin may be used.
- a protective film may be formed between the microlens 220 and the cover glass 221 to prevent moisture and impurities from entering.
- the second organic material layer 222 is made of an acrylic resin material, a styrene resin material, an epoxy resin material, or the like.
- the configuration illustrated in FIG. 3 is an example, and other configurations, for example, not only the above-described layers but also other layers may be added or any of the above-described layers may be deleted. Even with such a configuration, the present technology described below can be applied.
- FIG. 4 is a diagram for explaining image plane phase difference autofocus.
- a predetermined number of pixels in the pixel array unit 111 in which the pixels are two-dimensionally arranged in a matrix are assigned to the phase difference detection pixels.
- a plurality of phase difference detection pixels are provided at predetermined positions in the pixel array unit 111.
- phase difference detection pixel shown in FIG. 4 is a part of the solid-state imaging device 22 shown in FIGS. 2 and 3 and shows a portion including the phase difference detection pixel, and is necessary for the following description. It is the figure which extracted and illustrated.
- a device including a phase difference detection pixel and a portion that performs focus detection will be appropriately described as a focus detection device.
- phase difference detection pixel is a pixel used when detecting a focal point by the phase difference method
- imaging pixel is a pixel different from the phase difference detection pixel, and is a pixel used for imaging.
- lens 4 includes a lens group 21, microlenses 220-1 to 220-4, light shielding films 216-1 to 216-3, and photodiodes 214-1 to 214-4.
- the photodiode 214-2 and the photodiode 214-3 function as phase difference detection pixels, and pixels for acquiring an image signal for autofocus (focus detection).
- a photodiode 214-1 and a photodiode 214-4 arranged at positions sandwiching the photodiode 214-2 and the photodiode 214-3 are used as imaging pixels, and acquire an image signal by light from a subject. It is a pixel for this purpose.
- the photodiode 214-1 receives light from the subject collected by the microlens 220-1, and the photodiode 214-2 receives light from the subject collected by the microlens 220-2.
- the photodiode 214-3 receives light from the subject collected by the microlens 220-3, and the photodiode 214-4 receives light from the subject collected by the microlens 220-4. It is configured.
- the light shielding film 216-1 is provided so that the light from the microlens 220-1 does not enter the photodiode 214-2, and the light from the microlens 220-2 does not enter the photodiode 214-1. It has been. Similarly, the light shielding film 216-3 prevents the light from the microlens 220-4 from entering the photodiode 214-3, and prevents the light from the microlens 220-3 from entering the photodiode 214-4. It is provided as follows.
- the light shielding film 216-1 and the light shielding film 216-3 are provided to prevent light leaking to the adjacent pixels (photodiodes) as described above, they are provided between the adjacent photodiodes 214. .
- the light shielding film 216-3 has a function of selecting a light incident angle and receiving light in addition to a function of preventing light leaking to an adjacent pixel (photodiode) (hereinafter referred to as a light receiving film). It also has a function to realize (described as separation ability).
- the light shielding film 216-2 is provided from approximately the center of the photodiode 214-2 to approximately the center of the photodiode 214-3 so that the light is incident on the photodiode 214-2.
- the light shielding film 216-2 By providing the light shielding film 216-2, it is possible to separate and receive the light coming from the left part of the lens group 21 and the light coming from the right part. By detecting the light coming from the left part and the light coming from the right part of the lens group 21 by the photodiode 214-2 and the photodiode 214-3, respectively, the focus position can be detected as shown in FIG. Can do.
- the output from the photodiode 214-2 and the output from the photodiode 214-3 do not match (the outputs of the paired phase difference detection pixels do not match) at the rear pin or the front pin, but at the time of focusing
- the output from the photodiode 214-2 matches the output from the photodiode 214-3 (the outputs of the paired phase difference detection pixels match).
- focus detection is realized by moving the lens group 21 to a focus position.
- the focus position When the focus position is detected by such a phase difference method, the focus position can be detected at a relatively high speed, and high-speed autofocus can be realized. However, there is a possibility that the sensitivity may be lowered, for example, in a dark place. In some cases, it may be difficult to detect the focal position.
- the light shielding film 216-2 is provided up to the center of the photodiode 214-2.
- the photodiode 214-1 is not covered with a light shielding film, but the photodiode 214-2 is covered with a light shielding film up to the center.
- the amount of light incident on the photodiode 214-1 is compared with the amount of light incident on the photodiode 214-2, the amount of light of the photodiode 214-1 is greater than the amount of light of the photodiode 214-2. .
- the sensitivity of the photodiode 214-1 is higher than that of the photodiode 214-2.
- the sensitivity of the photodiode 214-2 is lowered due to the influence of the light shielding film 216-2 provided for providing the separation capability.
- the size of one pixel tends to be reduced, and there is a decrease in sensitivity due to the reduction in size. For this reason, the sensitivity of the photodiode 214-2 is likely to decrease.
- the photodiode 214-3 as the phase difference detection pixel.
- the phase difference detection pixel has a lower sensitivity due to light shielding than a normal pixel. Therefore, the influence of the reduction in the pixel size is large, and the focus position detection accuracy may be lowered. Smaller pixels may also degrade the separation capability, so if there is no separation capability, focus detection by image plane phase difference detection may not be realized.
- FIG. 6 is a plan view when the phase difference detection pixel is viewed from above, for example, when the phase difference detection pixel shown in FIG. 4 is viewed from the upper surface.
- one pixel is represented by a square, and the description will be continued assuming that the photodiode 214 is represented here.
- the photodiode 214-2 and the photodiode 214-3 of the phase difference detection pixel are illustrated.
- phase difference detection pixels are provided adjacent to each other.
- the phase difference detection pixels may be provided at different positions, or at different positions. Even in such a case, the present technology described below can be applied.
- a light shielding film 216 is provided above the photodiode 214-2 and the photodiode 214-3 in a portion other than the opening.
- the light-shielding film 216 has an opening provided continuously between the light-shielding film 216-1 and the light-shielding film 216-2 when viewed from the cross section (side surface) of the pixel. However, when viewed in a plane, as shown in FIG. 6, it is continuously provided, and a part thereof is opened as an opening.
- the light shielding film 216-1 provided on the photodiode 214-2 and the opening of the light shielding film 216-2 are defined as the opening 230-1
- -2 and the opening of the light shielding film 216-3 are referred to as an opening 230-2.
- the sensitivity is lower than that of a normal pixel.
- the curvature of the microlens 220 is changed, the imaging point of the light collected by the microlens 220 is adjusted, or the phase difference is detected. It is conceivable to perform this by adjusting the light shielding cover amount of the light shielding film 216 of the pixel.
- FIG. 7 is a diagram in which the phase difference detection pixel portion is extracted from the pixels shown in FIG.
- the microlens 220-2 and the microlens 220-3 are represented by a solid line and a broken line, but the solid line represents a shape when the curvature of the microlens 220 is large, and the broken line is a curve when the curvature of the microlens 220 is small. Represents the shape.
- an arrow indicated by a solid line indicates a path of light incident on the microlens 220 when the microlens 220 indicated by a solid line is applied
- an arrow indicated by a broken line indicates a micro path indicated by a broken line. The path of light incident on the microlens 220 when the lens 220 is applied is shown.
- the solid line arrow passes through the opening 230, but the broken line arrow is shielded by the light shielding film 216-2. It can be read that there is a part. From this, it can be seen that changing the curvature of the microlens 220 changes the amount of light passing through the opening 230 and changes the amount of light received by the photodiode 214.
- a graph indicated by a solid line is a microlens 220 having a large curvature, and is a graph of a photodiode 214 that receives light from the microlens 220 indicated by a solid line in FIG. 7.
- a graph indicated by a broken line is a micro lens 220 having a small curvature, and is a graph of a photodiode 214 that receives light from the micro lens 220 indicated by a broken line in FIG.
- the left side shows the amount of light received by the photodiode 214-2 shown in FIG. 7, and the right side shows the amount of light received by the photodiode 214-3 shown in FIG.
- FIG. 8 shows that the phase difference detection pixel takes the maximum value when the incident angle is other than 0 degree. That is, the phase difference detection pixel depends on the incident angle of light and takes a maximum value when the light is incident at a predetermined angle. Further, the phase difference detection pixel, for example, the photodiode 214-2 efficiently receives the light incident from the right side to obtain the maximum value, but does not receive the light incident from the left side, and the output value is small. It becomes. Similarly, the photodiode 214-2 efficiently receives the light incident from the left side and obtains the maximum value, but does not receive the light incident from the right side, and the output value becomes a small value.
- the phase difference detection pixel is configured to receive light from a predetermined direction and hardly receive light from directions other than the predetermined direction.
- the maximum value and the minimum value of the microlens 220 having a large curvature are larger than those of the microlens 220 having a small curvature. From this, it can be read that the curvature of the microlens 220 should be increased when the maximum sensitivity value is desired to be increased, and the curvature of the microlens 220 should be decreased when the minimum sensitivity value is desired to be increased.
- the sensitivity of the phase difference detection pixel can be changed by changing the curvature of the microlens 220.
- the curvature of the microlens 220 will be described as an example, but the sensitivity of the phase difference detection pixel can be changed by changing conditions other than the curvature, for example, conditions such as the material of the microlens 220. .
- the conditions of the microlens 220 such as increasing the curvature of the microlens 220.
- the conditions such as the curvature are changed only for the microlens 220 of the phase difference detection pixel, the continuity of the microlens 220 between the phase difference detection pixel and the imaging pixel is deteriorated.
- color mixing and the like may deteriorate in imaging pixels around the phase difference detection pixel.
- the characteristics of the imaging pixel may fluctuate and image quality may deteriorate.
- FIG. 9 is a diagram in which the phase difference detection pixel portion is extracted from the pixels shown in FIG.
- the light shielding film 216-2 is indicated by a solid line and a broken line, but the solid line indicates a case where the light shielding film 216-2 is formed short and the opening 230 is large, and the broken line indicates the light shielding film 216. -2 is formed long and the opening 230 is configured to be small.
- the case of the light shielding film 216-2 indicated by the solid line in FIG. 9 is compared with the case of the light shielding film 216-2 indicated by the broken line.
- the opening 230 is large, the light that has passed through the microlens 220 is received by the photodiode 214 without being shielded by the light shielding film 216-2.
- the opening 230 is small, so that the light that has passed through the microlens 220 is shielded by the light shielding film 216-2. 214 does not receive light.
- the length of the light shielding film 216 in other words, the size of the opening 230, and in other words, the amount of the light shielding film 216 covered by the microlens 220 is changed to change the light passing through the opening 230. It can be seen that the amount of light changes and the amount of light received by the photodiode 214 changes.
- a graph indicated by a solid line is a graph representing the sensitivity of the photodiode 214 when the light shielding film 216-2 indicated by the solid line in FIG. 9 is short (when the amount of light shielding film is small).
- a graph indicated by a broken line is a graph showing the sensitivity of the photodiode 214 when the light shielding film 216-2 indicated by the broken line in FIG. 9 is long (when the amount of light shielding film is large).
- the left side represents the amount of light received by the photodiode 214-2 shown in FIG. 9
- the right side represents the amount of light received by the photodiode 214-3 shown in FIG.
- the sensitivity of the phase difference detection pixel can be changed by changing the size of the light shielding film 216-2.
- the case where the size of the light shielding film 216-2 is changed has been described as an example.
- the case where the size of the light shielding film 216-1 and the light shielding film 216-3 is changed is similarly described.
- the sensitivity of the phase difference detection pixel can be changed. That is, the sensitivity of the phase difference detection pixel can be changed by the amount of the light shielding film 216 covered with the photodiode 214.
- the cover amount of the light shielding film 216 is reduced, in other words, when the opening 230 is enlarged, the resolution capability of the phase difference detection pixel may be reduced, and the function such as autofocus may be reduced.
- the sensitivity of the phase difference detection pixel can be adjusted by adjusting the conditions such as the curvature of the microlens 220 and the covering amount of the light shielding film 216. As described above, it is difficult to obtain the resolution and sensitivity desired for the phase difference detection pixel.
- the characteristics and output on the higher output side of the light reception angle distribution are adjusted. Therefore, it is difficult to adjust each characteristic independently.
- the output of the phase difference detection pixel is increased without increasing the characteristics of the imaging pixel and only the output on the lower side is increased while maintaining the output on the higher side of the light receiving angle distribution, it can be used as an imaging pixel. It is possible to provide a characteristic that maintains the phase difference detection characteristic.
- the phase difference detection characteristics are further improved. Can be improved.
- phase pixel capable of independently adjusting the characteristics on the higher output side and the characteristics on the lower output side of the light receiving angle distribution.
- FIG. 11 is a plan view when the phase difference detection pixel of the focus detection apparatus according to the first embodiment is viewed from above
- FIG. 12 is a cross-sectional view when viewed from the side.
- the phase difference detection pixel shown in FIG. 11 has a configuration in which a light shielding wall 301 is added to the phase difference detection pixel shown in FIG.
- the light shielding wall 301 is a light shielding film provided in the vertical direction as shown in FIG.
- the light shielding member arranged in the horizontal direction of the phase difference detection pixel is described as a light shielding film
- the light shielding member arranged in the vertical direction is described as a light shielding wall.
- the direction in which the light shielding film 216-2 is provided left and right direction in the figure
- the direction in which the light shielding wall 301 is provided is defined as the vertical direction.
- the light shielding wall 301-1 is provided on the microlens 220 side on the light shielding film 216-2, and the light shielding wall 301-2 is provided on the microlens 220 side on the light shielding film 216-2.
- the light shielding wall 301-1 and the light shielding wall 301-2 are located at both ends of the light shielding film 216-2, and are provided with a predetermined height in the vertical direction with respect to the light shielding film 216-2.
- the light shielding wall 301 is provided on the opening 230 side.
- the description will be continued assuming that the light shielding wall 301 is provided on the light shielding film 216-2, but the light shielding wall 301 may be provided also on the light shielding film 216-1 and the light shielding film 216-3.
- the light shielding film 216-2 is shown by a solid line and a broken line.
- a solid line represents the light shielding film 216-2 when the light shielding wall 301 is provided.
- a broken line represents the light shielding film 216-2 'when the light shielding wall 301 is not provided, and is a light shielding film having the same length as the light shielding film 216-2 shown in FIG.
- the light shielding film 216-2 ' is illustrated for comparison, and does not indicate that it is a configuration required in the phase difference detection pixel illustrated in FIG.
- the light shielding film 216-2 is configured to be shorter than the conventional light shielding film 216-2 ′, and a predetermined height is set on the microlens 220 side at both ends of the light shielding film 216-2.
- a light shielding wall 301 is provided.
- the opening 230 is configured to be large by configuring the covering amount of the light shielding film 216-2 to be small, and the opening 230 is configured to be large. An effect can be obtained.
- the light shielding wall 301 on the upper side of the light shielding film 216-2, it is possible to obtain the same effect as the case where the covering amount is configured to be large like the light shielding film 216-2 '.
- FIG. 13 a graph as shown in FIG. 13 is obtained.
- the horizontal axis of the graph shown in FIG. 13 is the incident angle of light, and the vertical axis represents the output value (sensitivity) of the pixel corresponding to the incident light.
- the graph indicated by the solid line is the light shielding film 216-2 indicated by the solid line in FIG. 12, and is a graph representing the sensitivity of the photodiode 214 of the phase difference detection pixel provided with the light shielding wall 301.
- the graph indicated by the broken line is the light shielding film 216-2 ′ indicated by the broken line in FIG. 12, and is a graph representing the sensitivity of the photodiode 214 of the phase difference detection pixel in which the light shielding wall 301 is not provided. .
- FIG. 13 shows that the minimum value of sensitivity can be increased without changing the maximum value of sensitivity by providing the light shielding wall 301.
- the light shielding wall 301 in the phase difference detection pixel it is possible to increase only the output on the low side while maintaining the output on the high side of the light reception angle distribution.
- the present applicant performed a simulation of the light reception angle distribution in the phase difference detection pixel provided with the light shielding wall 301 as shown in FIG. The result is shown in FIG.
- the horizontal axis represents the incident angle of light
- the vertical axis represents the output value (sensitivity) of the pixel corresponding to the incident light, as in the graph shown in FIG. 13.
- a graph indicated by a triangular point is a graph indicating the sensitivity of the photodiode 214 of the phase difference detection pixel provided with the light shielding wall 301
- a graph indicated by a square point is the light shielding film 216.
- -2 'and is a graph showing the sensitivity of the photodiode 214 of the phase difference detection pixel in which the light shielding wall 301 is not provided.
- the phase difference detection pixels are used as the imaging pixels. It can also be used.
- the light reception angle distribution of the photographing pixels has a maximum value at an angle of 0 degrees, and the difference between the maximum value and the minimum value of sensitivity is small.
- the pixels Since the output on the high side of the light reception angle distribution is maintained and the output on the low side is increased, the difference between the maximum and minimum values of the sensitivity is reduced, and the characteristics approximate the characteristics of the imaging element. It is also possible to use the pixels as imaging pixels. In addition, even if a light shielding wall is formed on the light shielding film of the phase difference detection pixel, the structure of the imaging pixel does not change, so the characteristics of the phase difference detection pixel are as described above without affecting the characteristics of the imaging pixel. Can be adjusted.
- the output on the higher side of the light receiving angle distribution can be adjusted by the light shielding wall 301, and the output on the lower side can be adjusted by the light shielding film 216. Then, it becomes possible to individually adjust the output on the high side and the output on the low sensitivity side.
- the light shielding wall 301 is rectangular as shown in FIG. 12 and has been described as being provided at the end of the light shielding film 216-2. However, the shape and position of the light shielding wall 301 are shown in FIG. It is not limited to different shapes and positions.
- FIG. 15 shows another example of the light shielding wall 301.
- the example shown in FIG. 15A represents a light shielding wall 301A in which the light shielding wall 301 has a triangular cross section. Any part of the light shielding wall 301A having a predetermined height can be used as the light shielding wall.
- the light shielding wall 301 is not located at the end of the light shielding film 216-2, but is located at a position slightly away from the end on the light shielding film 216.
- the light shielding wall 301B may be provided at any position of the light shielding film 216, as in the light shielding wall 301B, and the sensitivity can be adjusted by the position and height of the light shielding wall 216B.
- the shape and position of the light shielding wall 301 may be any shape and position that can be used to obtain a desired sensitivity in connection with sensitivity adjustment.
- the description is omitted, but the shape of the light shielding wall and the position where the light shielding wall is provided are the shapes that can obtain the desired sensitivity as in the first embodiment. Or any position.
- FIG. 16 is a cross-sectional view of the phase difference detection pixel of the focus detection apparatus according to the second embodiment when viewed from the side.
- the same parts as those of the phase difference detection pixel of the focus detection apparatus shown in FIG. 16
- the phase difference detection pixel shown in FIG. 16 includes a light shielding wall 302 on the light shielding film 216-2 '.
- the light shielding wall 302-1 is provided on the microlens 220-2 side on the light shielding film 216-2 ′, and the light shielding wall 302-2 is provided on the microlens 220-3 side on the light shielding film 216-2. ing.
- the light shielding wall 302-1 and the light shielding wall 302-2 are located at both ends of the light shielding film 216-2 ′, and are provided with a predetermined height in the vertical direction with respect to the light shielding film 216-2 ′. Yes.
- the light shielding wall 302 is provided on the opening 230 side.
- the light shielding wall 302 is provided on the light shielding film 216-2 ', the light shielding wall 302 may be provided also on the light shielding film 216-1 and the light shielding film 216-3.
- the configuration of the phase difference detection pixel shown in FIG. 16 is the same as that of the phase difference detection pixel shown in FIG. 12, but the length of the light shielding film 216-2 is different.
- the light shielding film 216-2 'of the phase difference detection pixel shown in FIG. 16 is longer than the light shielding film 216-2 shown in FIG. In other words, the light shielding film 216-2 'of the phase difference detection pixel shown in FIG. 16 has the same length as the light shielding film 216-2 of FIG.
- the opening 230 is configured to be small and the opening 230 is configured to be small because the light shielding film 216-2 is configured to have a large covering amount.
- An effect for example, an effect of improving the decomposition ability can be obtained.
- FIG. 17 shows a light reception angle distribution obtained from the phase difference detection pixel having such a configuration.
- the horizontal axis of the graph shown in FIG. 17 represents the incident angle of light, and the vertical axis represents the output value (sensitivity) of the pixel corresponding to the incident light.
- a graph indicated by a solid line is a graph representing the sensitivity of the photodiode 214 of the phase difference detection pixel provided with the light shielding wall 302.
- a graph indicated by a broken line is a graph representing the sensitivity of the photodiode 214 of the phase difference detection pixel in which the light shielding wall 302 is not provided.
- FIG. 17 shows that the maximum value of sensitivity can be lowered without changing the minimum value of sensitivity by providing the light shielding wall 302.
- the phase difference detection pixel by providing the light shielding wall 302 without changing the length of the light shielding film 216, only the output on the higher side is lowered while maintaining the output on the lower side of the light receiving angle distribution. Is possible.
- the output on the side having the higher light receiving angle distribution can be adjusted by adjusting the incident light by the light shielding wall 302, and the output on the lower side can be adjusted by the light shielding film 216. Then, it becomes possible to individually adjust the output on the high side and the output on the low sensitivity side.
- the structure of the imaging pixel does not change, so the characteristics of the phase difference detection pixel are as described above without affecting the characteristics of the imaging pixel. Can be adjusted.
- FIG. 18 is a cross-sectional view of the phase difference detection pixel of the focus detection device according to the third embodiment when viewed from the side.
- the same parts as those of the phase difference detection pixel of the focus detection device shown in FIG. 18
- the phase difference detection pixel shown in FIG. 18 has the same configuration as the phase difference detection pixel shown in FIG. 12, but the height of the light shielding wall 303 provided is different. That is, the phase difference detection pixel shown in FIG. 18 includes the light shielding wall 303 on the light shielding film 216-2, like the phase difference detection pixel shown in FIG.
- the light shielding wall 303-1 is provided on the microlens 220-2 side on the light shielding film 216-2
- the light shielding wall 303-2 is provided on the microlens 220-3 side on the light shielding film 216-2. Yes.
- the light shielding wall 303-1 and the light shielding wall 303-2 are located at both ends of the light shielding film 216-2, and are provided with a predetermined height in the vertical direction with respect to the light shielding film 216-2. The height is higher than that of the light shielding wall 301 shown in FIG.
- the light shielding wall 303 is provided on the opening 230 side.
- the description is continued assuming that the light shielding wall 303 is provided on the light shielding film 216-2, but the light shielding wall 303 may be provided also on the light shielding film 216-1 and the light shielding film 216-3.
- the light shielding film 216-2 is configured to be shorter than the conventional light shielding film 216-2 ′.
- a light shielding wall 303 having a height is provided.
- the opening 230 is configured to be large and the opening 230 is configured to be large due to the small amount of covering of the light shielding film 216-2.
- the covering amount is configured to be large like the light shielding film 216-2 ′. The same effect can be obtained.
- FIG. 19 a graph as shown in FIG. 19 is obtained.
- the horizontal axis of the graph shown in FIG. 19 represents the incident angle of light, and the vertical axis represents the output value (sensitivity) of the pixel corresponding to the incident light.
- the graph indicated by the solid line is the light shielding film 216-2 indicated by the solid line in FIG. 18, and is a graph representing the sensitivity of the photodiode 214 of the phase difference detection pixel provided with the light shielding wall 303.
- the graph indicated by a broken line is the light shielding film 216-2 ′ indicated by the broken line in FIG. 18, and is a graph representing the sensitivity of the photodiode 214 of the phase difference detection pixel in which the light shielding wall 303 is not provided. .
- FIG. 19 shows that by providing the light shielding wall 303, the maximum value of sensitivity can be lowered and the minimum value of sensitivity can be raised.
- the light shielding wall 303 in the phase difference detection pixel it is possible to lower the output on the higher light reception angle distribution side and increase the output on the lower side.
- the length of the light shielding film 216 (the amount that the light shielding film 216 covers the photodiode 214) is adjusted, the light shielding walls 301 to 303 are provided on the microlens 220 side of the light shielding film 216, and the height thereof is adjusted.
- the output on the higher side of the light receiving angle distribution and the output on the lower side so that a desired output can be obtained.
- the structure of the imaging pixel does not change, so the characteristics of the phase difference detection pixel are as described above without affecting the characteristics of the imaging pixel. Can be adjusted.
- FIG. 20 is a cross-sectional view of the phase difference detection pixel of the focus detection apparatus according to the fourth embodiment when viewed from the side.
- the same parts as those of the phase difference detection pixel of the focus detection apparatus shown in FIG. 20 the same parts as those of the phase difference detection pixel of the focus detection apparatus shown in FIG.
- the phase difference detection pixel shown in FIG. 20 has the same configuration as the phase difference detection pixel shown in FIG. 12 except that the light shielding wall 301 provided on the upper side of the light shielding film 216-2 is provided on the lower side.
- the light shielding wall 304-1 is provided on the photodiode 214-2 side below the light shielding film 216-2
- the light shielding wall 304-2 is provided on the photodiode 214-3 side below the light shielding film 216-2. It has been.
- the light shielding wall 304-1 and the light shielding wall 304-2 are located at both ends of the light shielding film 216-2, and are provided with a predetermined height in the vertical direction with respect to the light shielding film 216-2.
- the light shielding wall 304 is provided on the opening 230 side.
- the description will be continued assuming that the light shielding wall 304 is provided under the light shielding film 216-2, but the light shielding wall 304 may be provided also in the light shielding film 216-1 and the light shielding film 216-3.
- the light shielding film 216-2 is shown by a solid line and a broken line.
- a solid line represents the light shielding film 216-2 when the light shielding wall 304 is provided.
- a broken line represents the light shielding film 216-2 'when the light shielding wall 304 is not provided, and is a light shielding film having the same length as the light shielding film 216-2 shown in FIG.
- the light shielding film 216-2 ' is illustrated for comparison, and does not indicate that it is a configuration required in the phase difference detection pixel illustrated in FIG.
- the light shielding film 216-2 is configured to be shorter than the conventional light shielding film 216-2 ′, and a predetermined height is set on the photodiode 214 side at both ends of the light shielding film 216-2.
- a light shielding wall 304 is provided.
- the opening 230 is configured to be large and the opening 230 is configured to be large because the light-shielding film 216-2 is configured to have a small covering amount. An effect can be obtained.
- FIG. 21 When this is expressed as a graph, a graph as shown in FIG. 21 is obtained.
- the horizontal axis of the graph shown in FIG. 21 represents the incident angle of light, and the vertical axis represents the output value (sensitivity) of the pixel corresponding to the incident light.
- the graph indicated by the solid line is the light shielding film 216-2 indicated by the solid line in FIG. 20 and is a graph representing the sensitivity of the photodiode 214 of the phase difference detection pixel provided with the light shielding wall 304.
- the graph indicated by the broken line is the light shielding film 216-2 ′ indicated by the broken line in FIG. 20, and represents the sensitivity of the photodiode 214 of the phase difference detection pixel in which the light shielding wall 304 is not provided. .
- the maximum value of the sensitivity can be increased without significantly changing the minimum value of the sensitivity by providing the light shielding wall 304.
- the light shielding wall 304 in the phase difference detection pixel, it is possible to increase only the output on the high side while maintaining the output on the low side of the light reception angle distribution.
- phase difference detection pixel in which the output on the lower side of the light receiving angle distribution is maintained and the output on the higher side is increased can be a phase difference detection pixel having a high resolution capability.
- the structure of the imaging pixel does not change, so the characteristics of the phase difference detection pixel are as described above without affecting the characteristics of the imaging pixel. Can be adjusted.
- the shape and position of the light-shielding wall 304 may be any shape and position that can be used for sensitivity adjustment and that can achieve desired sensitivity.
- FIG. 22 is a cross-sectional view of the phase difference detection pixel of the focus detection apparatus in the fifth embodiment when viewed from the side.
- the same reference numerals are given to the same portions as those of the phase difference detection pixel of the focus detection apparatus shown in FIG. 20, and description thereof will be omitted as appropriate.
- the phase difference detection pixel shown in FIG. 22 includes a light shielding wall 305 below the light shielding film 216-2 '.
- the light shielding wall 305-1 is provided on the photodiode 214-2 side below the light shielding film 216-2 ', and the light shielding wall 305-2 is located on the photodiode 214-3 side below the light shielding film 216-2. Is provided.
- the light shielding wall 305-1 and the light shielding wall 305-2 are located at both ends of the light shielding film 216-2 ′, and are provided with a predetermined height in the vertical direction with respect to the light shielding film 216-2 ′. Yes.
- the light shielding wall 305 is provided on the opening 230 side.
- the description is continued assuming that the light shielding wall 305 is provided under the light shielding film 216-2 ', but the light shielding wall 305 may be provided also in the light shielding film 216-1 and the light shielding film 216-3.
- the configuration of the phase difference detection pixel shown in FIG. 22 is the same as that of the phase difference detection pixel shown in FIG. 20, but the length of the light shielding film 216-2 is different.
- the light shielding film 216-2 'of the phase difference detection pixel shown in FIG. 22 is longer than the light shielding film 216-2 shown in FIG. In other words, the light shielding film 216-2 'of the phase difference detection pixel shown in FIG. 22 has the same length as the light shielding film 216-2 in FIG.
- the opening 230 is configured to be small and the opening 230 is configured to be small because the light shielding film 216-2 is configured to have a large covering amount.
- An effect for example, an effect of improving the decomposition ability can be obtained.
- FIG. 23 shows the light reception angle distribution obtained from the phase difference detection pixel having such a configuration.
- the horizontal axis of the graph shown in FIG. 23 represents the incident angle of light, and the vertical axis represents the output value (sensitivity) of the pixel corresponding to the incident light.
- a graph indicated by a solid line is a graph representing the sensitivity of the photodiode 214 of the phase difference detection pixel provided with the light shielding wall 305.
- a graph indicated by a broken line is a graph representing the sensitivity of the photodiode 214 of the phase difference detection pixel in which the light shielding wall 305 is not provided.
- the minimum value of sensitivity can be lowered without changing the maximum value of sensitivity so much.
- the phase difference detection pixel by providing the light shielding wall 305 without changing the length of the light shielding film 216, only the output on the lower side is lowered while maintaining the output on the higher side of the light receiving angle distribution. Therefore, it is possible to improve the resolution capability as a phase difference detection pixel.
- the output on the side with the higher light receiving angle distribution can be adjusted by the light shielding wall 305, and the output on the lower side can be adjusted by the light shielding film 216. Then, it becomes possible to individually adjust the output on the high side and the output on the low sensitivity side.
- the structure of the imaging pixel does not change, so the characteristics of the phase difference detection pixel are as described above without affecting the characteristics of the imaging pixel. Can be adjusted.
- FIG. 24 is a cross-sectional view of the phase difference detection pixel of the focus detection apparatus in the sixth embodiment when viewed from the side.
- the same parts as those of the phase difference detection pixel of the focus detection device shown in FIG. 24.
- the phase difference detection pixel shown in FIG. 24 has the same configuration as the phase difference detection pixel shown in FIG. 20, but the height of the light shielding wall 306 provided is different. That is, the phase difference detection pixel shown in FIG. 24 includes the light shielding wall 306 below the light shielding film 216-2, like the phase difference detection pixel shown in FIG.
- the light shielding wall 306-1 is provided on the photodiode 214-2 side below the light shielding film 216-2
- the light shielding wall 306-2 is provided on the photodiode 214-3 side below the light shielding film 216-2. It has been.
- the light shielding wall 306-1 and the light shielding wall 306-2 are located at both ends of the light shielding film 216-2, and are provided with a predetermined height in the vertical direction with respect to the light shielding film 216-2. The height is higher than that of the light shielding wall 304 shown in FIG.
- the light shielding wall 306 is provided on the opening 230 side.
- the description is continued assuming that the light shielding wall 306 is provided under the light shielding film 216-2, but the light shielding wall 306 may be provided also in the light shielding film 216-1 and the light shielding film 216-3.
- the light shielding film 216-2 is configured to be shorter than the conventional light shielding film 216-2 ′, and a predetermined amount is provided on the photodiode 214 side at both ends of the light shielding film 216-2.
- a light shielding wall 306 having a height is provided.
- the opening 230 is configured to be large by configuring the covering amount of the light shielding film 216-2 to be small, and the opening 230 is configured to be large.
- the light shielding wall 306 is provided on the lower side of the light shielding film 216-2 and the height thereof is increased, so that the covering amount is large as in the case of the light shielding film 216-2 '. The same effect as the case can be obtained.
- FIG. 25 When this is expressed as a graph, a graph as shown in FIG. 25 is obtained.
- the horizontal axis of the graph shown in FIG. 25 represents the incident angle of light, and the vertical axis represents the output value (sensitivity) of the pixel corresponding to the incident light.
- the graph indicated by the solid line is the light shielding film 216-2 indicated by the solid line in FIG. 24, and represents the sensitivity of the photodiode 214 of the phase difference detection pixel provided with the light shielding wall 306.
- the graph indicated by a broken line is the light shielding film 216-2 ′ indicated by the broken line in FIG. 24, and represents the sensitivity of the photodiode 214 of the phase difference detection pixel in which the light shielding wall 306 is not provided. .
- the maximum value of sensitivity can be increased and the minimum value of sensitivity can be decreased.
- the light shielding wall 306 in the phase difference detection pixel it is possible to increase the output on the higher light reception angle distribution side and decrease the output on the lower side. By having such characteristics, a phase difference detection pixel with improved resolution can be obtained.
- the structure of the imaging pixel does not change, so the characteristics of the phase difference detection pixel are as described above without affecting the characteristics of the imaging pixel. Can be adjusted.
- the length of the light shielding film 216 (the amount that the light shielding film 216 covers the photodiode 214) is adjusted, the light shielding walls 304 to 306 are provided on the photodiode 214 side of the light shielding film 216, and the height thereof is adjusted.
- FIG. 26 is a cross-sectional view of the phase difference detection pixel of the focus detection apparatus according to the seventh embodiment when viewed from the side.
- the phase difference detection pixel shown in FIG. 26 has the same configuration as the phase difference detection pixel shown in FIG. 16 or FIG. 22, except that light shielding walls are provided above and below the light shielding film 216-2. That is, the phase difference detection pixel shown in FIG. 26 is provided with the light shielding wall 307 on the microlens 220 side on the light shielding film 216-2 as well as the phase difference detection pixel shown in FIG. A light shielding wall 308 is provided on the photodiode 214 side.
- the light shielding wall 307-1 is provided on the microlens 220-2 side on the light shielding film 216-2, and the light shielding wall 307-2 is provided on the microlens 220-3 side on the light shielding film 216-2. Yes.
- the light shielding wall 308-1 is provided on the photodiode 214-2 side below the light shielding film 216-2, and the light shielding wall 308-2 is provided on the photodiode 214-3 side below the light shielding film 216-2. Yes.
- the light shielding wall 307-1 and the light shielding wall 307-2 are located at both ends of the light shielding film 216-2, and are provided with a predetermined height in the vertical direction with respect to the light shielding film 216-2.
- the light shielding wall 308-1 and the light shielding wall 308-2 are also located at both ends of the light shielding film 216-2, and are provided with a predetermined height in the vertical direction with respect to the light shielding film 216-2.
- the description is continued assuming that the light shielding wall 307 and the light shielding wall 308 are provided on the light shielding film 216-2, but the light shielding wall 307 and the light shielding wall 308 are also provided on the light shielding film 216-1 and the light shielding film 216-3. You may do it.
- the light shielding wall 307 and the light shielding wall 308 are provided above and below the light shielding film 216-2.
- FIG. 27 shows the light receiving angle distribution of the phase difference detection pixel having such a configuration.
- the horizontal axis represents the incident angle of light
- the vertical axis represents the output value (sensitivity) of the pixel corresponding to the incident light.
- a graph indicated by a solid line is a graph showing the sensitivity of the photodiode 214 of the phase difference detection pixel provided with the light shielding wall 307 and the light shielding wall 308 shown in FIG.
- a graph indicated by a broken line is a graph representing the sensitivity of the photodiode 214 of the phase difference detection pixel in which the light shielding wall 307 and the light shielding wall 308 are not provided.
- FIG. 27 shows that the maximum value of sensitivity can be lowered and the minimum value of sensitivity can be lowered by providing the light shielding wall 307 and the light shielding wall 308.
- the light shielding wall 307 and the light shielding wall 308 in the phase difference detection pixel it is possible to lower both the output on the higher side and the output on the lower side of the light reception angle distribution.
- the light shielding wall can be configured to be provided on the upper side and the lower side of the light shielding film, respectively, so that the characteristic shown in FIG. 27 is obtained. It is possible to adjust the output on the higher light reception angle distribution side and the output on the lower side so that a desired output can be obtained. In addition, even if a light shielding wall is formed on the light shielding film of the phase difference detection pixel, the structure of the imaging pixel does not change, so the characteristics of the phase difference detection pixel are as described above without affecting the characteristics of the imaging pixel. Can be adjusted.
- 26 shows an example in which the light shielding wall 307 and the light shielding wall 308 are provided in the same manner as the light shielding film 216, the light shielding wall 307 and the light shielding wall 308 are provided at different positions of the light shielding film 216, respectively. Such a configuration is also possible.
- FIG. 28 is a diagram illustrating a configuration of a phase difference detection pixel according to the eighth embodiment.
- the same parts as those of the phase difference detection pixel shown in FIG. 28 the same parts as those of the phase difference detection pixel shown in FIG.
- a light shielding film 309-1 is provided on the microlens 220-2 side of the light shielding film 216-1 in a direction parallel to the light shielding film 216-1.
- a light shielding film 309-2 is provided on the microlens 220-2, 220-3 side of the light shielding film 216-2 in a direction parallel to the light shielding film 216-2.
- a light shielding film 309-3 is provided on the microlens 220-3 side of the light shielding film 216-3 in a direction parallel to the light shielding film 216-3.
- the light shielding film 216-1 and the light shielding film 309-1 are films having the same length.
- the light shielding film 216-3 and the light shielding film 309-3 are films having the same length. In contrast to these films, the light shielding film 216-2 and the light shielding film 309-2 have different lengths.
- the output with the higher light receiving angle distribution can be adjusted by the light shielding film 309 located on the microlens 220 side, and the output with the lower light receiving angle distribution is Adjustment can be performed by the light shielding film 216 located on the photodiode 214 side.
- the length (covering amount) of the light shielding film 309-2 is configured to be smaller than the length (covering amount) of the light shielding film 216-2.
- the light receiving angle distribution of the phase difference detection having the two films configured as described above is as shown in FIG. In the graph shown in FIG. 29, the horizontal axis represents the incident angle of light, and the vertical axis represents the output value (sensitivity) of the pixel corresponding to the incident light.
- a graph indicated by a solid line is a graph showing the sensitivity of the photodiode 214 of the phase difference detection pixel provided with the two-layer light shielding film shown in FIG.
- a graph indicated by a broken line is a graph showing the sensitivity of the photodiode 214 of the phase difference detection pixel provided with one layer of the light shielding film.
- FIG. 29 shows that by providing two light shielding films, the maximum sensitivity value can be maintained and the minimum sensitivity value can be lowered.
- the maximum sensitivity value can be maintained and the minimum sensitivity value can be lowered.
- the output on the higher side of the light receiving angle distribution and the output on the lower side are adjusted so that a desired output can be obtained. Can do. Even if a plurality of light shielding films for the phase difference detection pixel are formed, the structure of the imaging pixel does not change, so the characteristics of the phase difference detection pixel are adjusted as described above without affecting the characteristics of the imaging pixel. can do.
- FIG. 28 shows an example of a phase difference detection pixel provided with a two-layer light-shielding film, but it is not limited to two layers, and may be a multilayer such as three layers.
- the characteristics of the imaging pixel do not change, and while the output of the phase difference detection pixel having the higher light receiving angle distribution is maintained, only the output on the lower side can be increased, and it can be used as an imaging pixel. Therefore, it is possible to provide a characteristic that maintains a certain degree of phase difference detection characteristic.
- the phase difference detection characteristic can be further improved. it can.
- FIG. 30 is a functional block diagram illustrating an overall configuration of an endoscope camera (capsule endoscope camera 400A) according to an application example.
- the capsule endoscope camera 400A includes an optical system 410, a shutter device 420, a solid-state imaging device 22, a drive circuit 440, a signal processing circuit 430, a data transmission unit 450, a drive battery 460, and a posture ( (Direction, angle) gyro circuit 470 for sensing.
- the optical system 410 includes one or a plurality of imaging lenses that form image light (incident light) from a subject on the imaging surface of the solid-state imaging device 22.
- the shutter device 420 controls a light irradiation period (exposure period) and a light shielding period to the solid-state imaging device 22.
- the drive circuit 440 drives the opening and closing of the shutter device 420 and drives the exposure operation and the signal readout operation in the solid-state imaging device 22.
- the signal processing circuit 430 performs predetermined signal processing, such as demosaic processing and white balance adjustment processing, on the output signal from the solid-state imaging device 22.
- the optical system 410 is preferably capable of photographing in a plurality of directions (for example, all directions) in a four-dimensional space, and is configured by one or a plurality of lenses.
- the video signal D1 after the signal processing in the signal processing circuit 430 and the attitude detection signal D2 output from the gyro circuit 470 are transmitted to an external device by wireless communication through the data transmission unit 450. ing.
- the endoscopic camera to which the image sensor in the above embodiment can be applied is not limited to the capsule type as described above, but an insertion type endoscope camera (insertion type) as shown in FIG. 31, for example. It may be an endoscopic camera 400B).
- the insertion-type endoscope camera 400B has an optical system 410, a shutter device 420, a solid-state imaging device 22, a drive circuit 440, a signal processing circuit 430, and a data transmission unit, as in part of the configuration of the capsule endoscope camera 400A. 450.
- the insertion-type endoscope camera 400B is further provided with an arm 480a that can be stored inside the apparatus and a drive unit 480 that drives the arm 480a.
- Such an insertion type endoscope camera 400B is connected to a cable 490 having a wiring 490A for transmitting the arm control signal CTL to the drive unit 480 and a wiring 490B for transmitting the video signal Dout based on the photographed image.
- a cable 490 having a wiring 490A for transmitting the arm control signal CTL to the drive unit 480 and a wiring 490B for transmitting the video signal Dout based on the photographed image.
- FIG. 32 is a functional block diagram showing the overall configuration of a vision chip (vision chip 500) according to another application example.
- the vision chip 500 is an artificial retina used by being embedded in a part of a wall on the back side of the eyeball E1 of the eye (the retina E2 having a visual nerve).
- the vision chip 500 is embedded in, for example, a part of any one of the ganglion cells C1, horizontal cells C2, and photoreceptor cells C3 in the retina E2, for example, the solid-state imaging device 22, the signal processing circuit 510, and the stimulus. And an electrode portion 520.
- the stimulation electrode unit 520 has a function of applying a stimulus (electric signal) to the visual nerve according to the input control signal.
- system represents the entire apparatus composed of a plurality of apparatuses.
- a micro lens A light receiving unit that receives light incident through the microlens; A light-shielding film that is provided between the microlens and the light-receiving unit and limits the amount of light to the light-receiving unit; And a light shielding wall provided in a direction perpendicular to the light shielding film.
- the light shielding wall has a predetermined height on the microlens side.
- the focus detection apparatus according to (1) or (2) When the maximum value of the sensitivity of the light receiving portion obtained when there is no light shielding wall and only the light shielding film is lowered and the minimum value is increased, the amount of the light shielding portion covered by the light receiving portion is reduced, and the light shielding wall is The focus detection apparatus according to (1) or (2), wherein the focus detection apparatus is provided with a predetermined height on the microlens side.
- a micro lens A light receiving unit that receives light incident through the microlens;
- a focus detection apparatus comprising: a plurality of light shielding films provided between the microlens and the light receiving unit and configured to limit a light amount to the light receiving unit.
- the maximum value of the sensitivity of the light receiving unit obtained when the light shielding film is one layer is maintained and the minimum value is increased, the light reception of the light shielding film provided on the microlens side among the plurality of light shielding curtains.
- the focus detection device wherein the amount of covering with respect to the light receiving portion is made smaller than the amount of covering with respect to the light receiving portion of the light shielding film provided on the light receiving portion side.
- a micro lens A light receiving unit that receives light incident through the microlens; A light-shielding film that is provided between the microlens and the light-receiving unit and limits the amount of light to the light-receiving unit; A light shielding wall provided in a direction perpendicular to the light shielding film; A detection unit for detecting a focus using a signal from the light receiving unit; An electronic device comprising: a signal processing unit that performs signal processing on a signal output from the light receiving unit that is not provided with the light shielding film.
- a lens array having a plurality of lenses; A light receiving portion having a plurality of light receiving pixels; A light shielding portion provided between the lens array and the light receiving portion in a first direction,
- the lens array includes a first lens and a second lens,
- the light receiving unit includes a first light receiving pixel facing the first lens, and a second light receiving pixel facing the second lens,
- the light shielding portion overlaps the first lens and protrudes in the first direction, and the second protrusion protrudes in the first direction and overlaps the second lens.
- a focus detection device is used to detect a focus detection device.
- the shading part is A light-shielding film that overlaps the first lens and the second lens; The first light shielding wall extending in the first direction in the first projecting region, and the second light shielding wall extending in the first direction in the second projecting region.
- Focus detection device (18) The focus detection apparatus according to (16) or (17), wherein in the first direction, the first light shielding wall and the second light shielding wall are thicker than the light shielding film.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Automatic Focus Adjustment (AREA)
- Focusing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
1.撮像装置の構成について
2.撮像素子の構成について
3.像面位相差方式によるオートフォーカスについて
4.第1の実施の形態における焦点検出装置の構成
5.第2の実施の形態における焦点検出装置の構成
6.第3の実施の形態における焦点検出装置の構成
7.第4の実施の形態における焦点検出装置の構成
8.第5の実施の形態における焦点検出装置の構成
9.第6の実施の形態における焦点検出装置の構成
10.第7の実施の形態における焦点検出装置の構成
11.第8の実施の形態における焦点検出装置の構成
12.適用例
以下に説明する本技術は、デジタルカメラなどのオートフォーカス機構に適用できる。またオートフォーカスの方式として、主にコントラスト方式と位相差方式があるが、本技術は、位相差方式に適用でき、以下の説明においては、像面位相差オートフォーカスを例にあげて説明を行う。
図2は、固体撮像素子22の構成を示す図であり、例えばX-Yアドレス方式撮像装置の一種であるCMOSイメージセンサの構成の概略を示すシステム構成図である。ここで、CMOSイメージセンサとは、CMOSプロセスを応用して、または、部分的に使用して作成されたイメージセンサである。
図4は、像面位相差オートフォーカスについて説明するための図である。画素が行列状に2次元配置された画素アレイ部111内の所定数の画素が位相差検出画素に割り当てられる。位相差検出画素は、画素アレイ部111内の所定の位置に複数設けられている。
図11は、第1の実施の形態における焦点検出装置の位相差検出画素を上面から見たときの平面図であり、図12は、側面から見たときの断面図である。図11、図12に示した焦点検出装置の位相差検出画素において、図6、図7、図9に示した焦点検出装置の位相差検出画素と同一の部分には、同一の符号を付し、その説明は適宜省略する。
図16は、第2の実施の形態における焦点検出装置の位相差検出画素を側面から見たときの断面図である。図16に示した焦点検出装置の位相差検出画素において、図12に示した焦点検出装置の位相差検出画素と同一の部分には、同一の符号を付し、その説明は適宜省略する。
図18は、第3の実施の形態における焦点検出装置の位相差検出画素を側面から見たときの断面図である。図18に示した焦点検出装置の位相差検出画素において、図12に示した焦点検出装置の位相差検出画素と同一の部分には、同一の符号を付し、その説明は適宜省略する。
図20は、第4の実施の形態における焦点検出装置の位相差検出画素を側面から見たときの断面図である。図20に示した焦点検出装置の位相差検出画素において、図12に示した焦点検出装置の位相差検出画素と同一の部分には、同一の符号を付し、その説明は適宜省略する。
図22は、第5の実施の形態における焦点検出装置の位相差検出画素を側面から見たときの断面図である。図22に示した焦点検出装置の位相差検出画素において、図20に示した焦点検出装置の位相差検出画素と同一の部分には、同一の符号を付し、その説明は適宜省略する。
図24は、第6の実施の形態における焦点検出装置の位相差検出画素を側面から見たときの断面図である。図24に示した焦点検出装置の位相差検出画素において、図20に示した焦点検出装置の位相差検出画素と同一の部分には、同一の符号を付し、その説明は適宜省略する。
図26は、第7の実施の形態における焦点検出装置の位相差検出画素を側面から見たときの断面図である。図26に示した焦点検出装置の位相差検出画素において、図16,図22に示した焦点検出装置の位相差検出画素と同一の部分には、同一の符号を付し、その説明は適宜省略する。
第1乃至第7の実施の形態においては、遮光膜216と垂直に交わる方向に遮光壁を設ける例を示した。第8の実施の形態として、遮光膜216と平行に設けられた遮光膜で、第1乃至第7の実施の形態と同じく、受光角度分布の高い側の出力や、低い側の出力を、所望の出力が得られるように調整することができることについて説明する。
以下、上記した位相差検出画素を含む焦点検出装置の適用例について説明する。上記実施の形態における固体撮像素子22はいずれも、様々な分野における電子機器に適用可能であり、図1に示した撮像装置(カメラ)の他に、ここでは、その一例として、内視鏡カメラ、ビジョンチップ(人工網膜)について説明する。
マイクロレンズと、
前記マイクロレンズを介して入射された光を受光する受光部と、
前記マイクロレンズと前記受光部との間に設けられ、前記受光部への光量を制限する遮光膜と、
前記遮光膜に対して垂直方向に設けられる遮光壁と
を備える焦点検出装置。
(2)
前記遮光壁は、前記遮光膜の開口部分に設けられている
前記(1)に記載の焦点検出装置。
(3)
前記遮光壁は、前記遮光膜のマイクロレンズ側に設けられている
前記(1)または(2)に記載の焦点検出装置。
(4)
前記遮光壁は、前記遮光膜の受光部側に設けられている
前記(1)または(2)に記載の焦点検出装置。
(5)
前記遮光壁は、前記遮光膜のマイクロレンズ側と、前記受光部側に、それぞれ設けられている
前記(1)または(2)に記載の焦点検出装置。
(6)
前記遮光壁がなく、前記遮光膜だけのときに得られる前記受光部の感度の最大値を保ち、最小値を上げる場合、前記遮光膜の前記受光部に被る量を小さくし、前記遮光壁を、前記マイクロレンズ側に所定の高さを有して設ける
前記(1)または(2)に記載の焦点検出装置。
(7)
前記遮光壁がなく、前記遮光膜だけのときに得られる前記受光部の感度の最小値を保ち、最大値を下げる場合、前記遮光壁を、前記マイクロレンズ側に所定の高さを有して設ける
前記(1)または(2)に記載の焦点検出装置。
(8)
前記遮光壁がなく、前記遮光膜だけのときに得られる前記受光部の感度の最大値を下げ、最小値を上げる場合、前記遮光膜の前記受光部に被る量を小さくし、前記遮光壁を、前記マイクロレンズ側に所定の高さを有して設ける
前記(1)または(2)に記載の焦点検出装置。
(9)
前記遮光壁がなく、前記遮光膜だけのときに得られる前記受光部の感度の最小値を保ち、最大値を上げる場合、前記遮光膜の前記受光部に被る量を小さくし、前記遮光壁を、前記受光部側に所定の高さを有して設ける
前記(1)または(2)に記載の焦点検出装置。
(10)
前記遮光壁がなく、前記遮光膜だけのときに得られる前記受光部の感度の最大値を保ち、最小値を上げる場合、前記遮光壁を、前記受光部側に所定の高さを有して設ける
前記(1)または(2)に記載の焦点検出装置。
(11)
前記遮光壁がなく、前記遮光膜だけのときに得られる前記受光部の感度の最大値を上げ、最小値を下げる場合、前記遮光膜の前記受光部に被る量を小さくし、前記遮光壁を、前記受光部側に所定の高さを有して設ける
前記(1)または(2)に記載の焦点検出装置。
(12)
前記遮光壁がなく、前記遮光膜だけのときに得られる前記受光部の感度の最大値を下げ、最小値を下げる場合、前記遮光壁を、前記遮光膜のマイクロレンズ側と、前記受光部側に、それぞれ所定の高さを有して設ける
前記(1)または(2)に記載の焦点検出装置。
(13)
マイクロレンズと、
前記マイクロレンズを介して入射された光を受光する受光部と、
前記マイクロレンズと前記受光部との間に設けられ、前記受光部への光量を制限する複数の遮光膜と
を備える焦点検出装置。
(14)
前記遮光膜が1層のときに得られる前記受光部の感度の最大値を保ち、最小値を上げる場合、前記複数の遮光幕のうち、前記マイクロレンズ側に設けられている遮光膜の前記受光部に対する被り量を、前記受光部側に設けられている遮光膜の前記受光部に対する被り量よりも小さくする
前記(13)に記載の焦点検出装置。
(15)
マイクロレンズと、
前記マイクロレンズを介して入射された光を受光する受光部と、
前記マイクロレンズと前記受光部との間に設けられ、前記受光部への光量を制限する遮光膜と、
前記遮光膜に対して垂直方向に設けられる遮光壁と、
前記受光部からの信号を用いて焦点を検出する検出部と、
前記遮光膜が設けられていない前記受光部から出力される信号に対して信号処理を行う信号処理部と
を備える電子機器。
(16)
複数のレンズを有するレンズアレイと、
複数の受光画素を有する受光部と、
第1の方向において前記レンズアレイと前記受光部との間に設けられる遮光部と
を備え、
前記レンズアレイは、第1のレンズと、第2のレンズとを備え、
前記受光部は、前記第1のレンズに対向する第1の受光画素と、前記第2のレンズに対向する第2の受光画素とを備え、
前記遮光部は、前記第1のレンズとオーバーラップし前記第1の方向に突出する第1の突出領域と、前記第2のレンズとオーバーラップし前記第1の方向に突出する第2の突出領域とを備える
焦点検出装置。
(17)
前記遮光部は、
前記第1のレンズおよび前記第2のレンズにオーバーラップする遮光膜、
前記第1の突出領域において前記第1の方向に延びる第1の遮光壁、および
前記第2の突出領域において前記第1の方向に延びる第2の遮光壁、を備える
前記(16)に記載の焦点検出装置。
(18)
前記第1の方向において、前記第1の遮光壁および前記第2の遮光壁は、前記遮光膜よりも厚い
前記(16)または(17)に記載の焦点検出装置。
Claims (18)
- マイクロレンズと、
前記マイクロレンズを介して入射された光を受光する受光部と、
前記マイクロレンズと前記受光部との間に設けられ、前記受光部への光量を制限する遮光膜と、
前記遮光膜に対して垂直方向に設けられる遮光壁と
を備える焦点検出装置。 - 前記遮光壁は、前記遮光膜の開口部分に設けられている
請求項1に記載の焦点検出装置。 - 前記遮光壁は、前記遮光膜のマイクロレンズ側に設けられている
請求項1に記載の焦点検出装置。 - 前記遮光壁は、前記遮光膜の受光部側に設けられている
請求項1に記載の焦点検出装置。 - 前記遮光壁は、前記遮光膜のマイクロレンズ側と、前記受光部側に、それぞれ設けられている
請求項1に記載の焦点検出装置。 - 前記遮光壁がなく、前記遮光膜だけのときに得られる前記受光部の感度の最大値を保ち、最小値を上げる場合、前記遮光膜の前記受光部に被る量を小さくし、前記遮光壁を、前記マイクロレンズ側に所定の高さを有して設ける
請求項1に記載の焦点検出装置。 - 前記遮光壁がなく、前記遮光膜だけのときに得られる前記受光部の感度の最小値を保ち、最大値を下げる場合、前記遮光壁を、前記マイクロレンズ側に所定の高さを有して設ける
請求項1に記載の焦点検出装置。 - 前記遮光壁がなく、前記遮光膜だけのときに得られる前記受光部の感度の最大値を下げ、最小値を上げる場合、前記遮光膜の前記受光部に被る量を小さくし、前記遮光壁を、前記マイクロレンズ側に所定の高さを有して設ける
請求項1に記載の焦点検出装置。 - 前記遮光壁がなく、前記遮光膜だけのときに得られる前記受光部の感度の最小値を保ち、最大値を上げる場合、前記遮光膜の前記受光部に被る量を小さくし、前記遮光壁を、前記受光部側に所定の高さを有して設ける
請求項1に記載の焦点検出装置。 - 前記遮光壁がなく、前記遮光膜だけのときに得られる前記受光部の感度の最大値を保ち、最小値を上げる場合、前記遮光壁を、前記受光部側に所定の高さを有して設ける
請求項1に記載の焦点検出装置。 - 前記遮光壁がなく、前記遮光膜だけのときに得られる前記受光部の感度の最大値を上げ、最小値を下げる場合、前記遮光膜の前記受光部に被る量を小さくし、前記遮光壁を、前記受光部側に所定の高さを有して設ける
請求項1に記載の焦点検出装置。 - 前記遮光壁がなく、前記遮光膜だけのときに得られる前記受光部の感度の最大値を下げ、最小値を下げる場合、前記遮光壁を、前記遮光膜のマイクロレンズ側と、前記受光部側に、それぞれ所定の高さを有して設ける
請求項1に記載の焦点検出装置。 - マイクロレンズと、
前記マイクロレンズを介して入射された光を受光する受光部と、
前記マイクロレンズと前記受光部との間に設けられ、前記受光部への光量を制限する複数の遮光膜と
を備える焦点検出装置。 - 前記遮光膜が1層のときに得られる前記受光部の感度の最大値を保ち、最小値を上げる場合、前記複数の遮光幕のうち、前記マイクロレンズ側に設けられている遮光膜の前記受光部に対する被り量を、前記受光部側に設けられている遮光膜の前記受光部に対する被り量よりも小さくする
請求項13に記載の焦点検出装置。 - マイクロレンズと、
前記マイクロレンズを介して入射された光を受光する受光部と、
前記マイクロレンズと前記受光部との間に設けられ、前記受光部への光量を制限する遮光膜と、
前記遮光膜に対して垂直方向に設けられる遮光壁と、
前記受光部からの信号を用いて焦点を検出する検出部と、
前記遮光膜が設けられていない前記受光部から出力される信号に対して信号処理を行う信号処理部と
を備える電子機器。 - 複数のレンズを有するレンズアレイと、
複数の受光画素を有する受光部と、
第1の方向において前記レンズアレイと前記受光部との間に設けられる遮光部と
を備え、
前記レンズアレイは、第1のレンズと、第2のレンズとを備え、
前記受光部は、前記第1のレンズに対向する第1の受光画素と、前記第2のレンズに対向する第2の受光画素とを備え、
前記遮光部は、前記第1のレンズとオーバーラップし前記第1の方向に突出する第1の突出領域と、前記第2のレンズとオーバーラップし前記第1の方向に突出する第2の突出領域とを備える
焦点検出装置。 - 前記遮光部は、
前記第1のレンズおよび前記第2のレンズにオーバーラップする遮光膜、
前記第1の突出領域において前記第1の方向に延びる第1の遮光壁、および
前記第2の突出領域において前記第1の方向に延びる第2の遮光壁、を備える
請求項16に記載の焦点検出装置。 - 前記第1の方向において、前記第1の遮光壁および前記第2の遮光壁は、前記遮光膜よりも厚い
請求項17に記載の焦点検出装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201580000816.7A CN105229787B (zh) | 2014-04-15 | 2015-04-03 | 焦点检测装置和电子设备 |
US14/895,804 US10453883B2 (en) | 2014-04-15 | 2015-04-03 | Focus detecting device and electronic device |
US16/575,098 US10903256B2 (en) | 2014-04-15 | 2019-09-18 | Focus detecting device and electronic device |
US17/122,759 US11282882B2 (en) | 2014-04-15 | 2020-12-15 | Focus detecting device and electronic device |
US17/674,641 US11756974B2 (en) | 2014-04-15 | 2022-02-17 | Focus detecting device and electronic device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-083363 | 2014-04-15 | ||
JP2014083363A JP6237431B2 (ja) | 2014-04-15 | 2014-04-15 | 焦点検出装置、電子機器 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/895,804 A-371-Of-International US10453883B2 (en) | 2014-04-15 | 2015-04-03 | Focus detecting device and electronic device |
US16/575,098 Continuation US10903256B2 (en) | 2014-04-15 | 2019-09-18 | Focus detecting device and electronic device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015159727A1 true WO2015159727A1 (ja) | 2015-10-22 |
Family
ID=54323939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/060550 WO2015159727A1 (ja) | 2014-04-15 | 2015-04-03 | 焦点検出装置、電子機器 |
Country Status (4)
Country | Link |
---|---|
US (4) | US10453883B2 (ja) |
JP (1) | JP6237431B2 (ja) |
CN (1) | CN105229787B (ja) |
WO (1) | WO2015159727A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6237431B2 (ja) | 2014-04-15 | 2017-11-29 | ソニー株式会社 | 焦点検出装置、電子機器 |
WO2017111171A1 (ja) | 2015-12-25 | 2017-06-29 | 株式会社ニコン | 撮像素子および撮像装置 |
WO2018123174A1 (ja) * | 2016-12-28 | 2018-07-05 | オリンパス株式会社 | 撮像装置、内視鏡および内視鏡システム |
KR102398667B1 (ko) * | 2017-06-05 | 2022-05-16 | 삼성전자주식회사 | 위상 검출 픽셀을 포함하는 이미지 센서 |
US10529763B2 (en) * | 2018-04-19 | 2020-01-07 | Semiconductor Components Industries, Llc | Imaging pixels with microlenses |
WO2020061823A1 (zh) * | 2018-09-26 | 2020-04-02 | 深圳市汇顶科技股份有限公司 | 光学图像采集单元、光学图像采集装置和电子设备 |
CN113169200A (zh) * | 2018-12-27 | 2021-07-23 | 索尼半导体解决方案公司 | 成像元件以及成像元件的制造方法 |
CN111093018B (zh) * | 2019-12-27 | 2021-04-30 | Oppo广东移动通信有限公司 | 成像模组及终端 |
US11276793B2 (en) * | 2020-06-04 | 2022-03-15 | Visera Technologies Company Limited | Semiconductor device |
WO2022239831A1 (ja) * | 2021-05-14 | 2022-11-17 | 株式会社ニコン | 撮像素子、焦点検出装置および撮像装置 |
CN116209316A (zh) * | 2021-11-29 | 2023-06-02 | 群创光电股份有限公司 | 允许光线穿过的电子装置及其构成的电子模块 |
CN115278085B (zh) * | 2022-07-29 | 2024-05-07 | 维沃移动通信有限公司 | 图像传感器、拍摄方法及装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011176715A (ja) * | 2010-02-25 | 2011-09-08 | Nikon Corp | 裏面照射型撮像素子および撮像装置 |
JP2012173492A (ja) * | 2011-02-21 | 2012-09-10 | Sony Corp | 撮像素子および撮像装置 |
JP2014082310A (ja) * | 2012-10-16 | 2014-05-08 | Canon Inc | 固体撮像装置、固体撮像装置の製造方法、および撮像システム |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7667286B2 (en) * | 2004-09-01 | 2010-02-23 | Panasonic Corporation | Light-collecting device, solid-state imaging apparatus and method of manufacturing thereof |
KR100710210B1 (ko) * | 2005-09-28 | 2007-04-20 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
JP2007220832A (ja) * | 2006-02-15 | 2007-08-30 | Matsushita Electric Ind Co Ltd | 固体撮像装置及びカメラ |
US7466002B2 (en) * | 2006-06-19 | 2008-12-16 | Mitutoyo Corporation | Incident light angle detector for light sensitive integrated circuit |
JP5180795B2 (ja) * | 2007-12-10 | 2013-04-10 | キヤノン株式会社 | 撮像装置及びその制御方法 |
US8264678B2 (en) * | 2008-01-02 | 2012-09-11 | Nxp B.V. | Light sensor with intensity and direction detection |
JP5169499B2 (ja) * | 2008-06-02 | 2013-03-27 | 株式会社ニコン | 撮像素子および撮像装置 |
JP5278165B2 (ja) * | 2009-05-26 | 2013-09-04 | ソニー株式会社 | 焦点検出装置、撮像素子および電子カメラ |
KR101638183B1 (ko) * | 2009-08-11 | 2016-07-11 | 삼성전자주식회사 | 이미지 센서 |
JP2011153965A (ja) * | 2010-01-28 | 2011-08-11 | Ricoh Co Ltd | 測距装置、測距用モジュール及びこれを用いた撮像装置及び測距用モジュールの製作方法 |
JP2011165736A (ja) | 2010-02-05 | 2011-08-25 | Panasonic Corp | 固体撮像装置およびカメラ |
JP5651986B2 (ja) * | 2010-04-02 | 2015-01-14 | ソニー株式会社 | 固体撮像装置とその製造方法、並びに電子機器及びカメラモジュール |
JP2012074521A (ja) * | 2010-09-28 | 2012-04-12 | Sony Corp | 固体撮像装置の製造方法、固体撮像装置、および電子機器 |
JP2012084608A (ja) * | 2010-10-07 | 2012-04-26 | Sony Corp | 固体撮像装置とその製造方法、並びに電子機器 |
JP5659707B2 (ja) * | 2010-11-08 | 2015-01-28 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
JP2013021168A (ja) * | 2011-07-12 | 2013-01-31 | Sony Corp | 固体撮像装置、固体撮像装置の製造方法、電子機器 |
US8810713B2 (en) * | 2011-07-13 | 2014-08-19 | Olympus Imaging Corp. | Image pickup apparatus and image pickup device for performing auto-focusing |
JP5794068B2 (ja) * | 2011-09-16 | 2015-10-14 | ソニー株式会社 | 固体撮像素子および製造方法、並びに電子機器 |
JP2014086538A (ja) * | 2012-10-23 | 2014-05-12 | Toshiba Corp | 固体撮像装置の製造方法および固体撮像装置 |
US9502453B2 (en) * | 2013-03-14 | 2016-11-22 | Visera Technologies Company Limited | Solid-state imaging devices |
US9331118B2 (en) * | 2013-09-16 | 2016-05-03 | Omnivision Technologies, Inc. | Sensor and method for color photosensor array with shielded, deep-penetration, photodiodes for color detection |
JP6237431B2 (ja) * | 2014-04-15 | 2017-11-29 | ソニー株式会社 | 焦点検出装置、電子機器 |
DE112019006460T5 (de) * | 2018-12-26 | 2021-09-16 | Sony Semiconductor Solutions Corporation | Bildaufnahmeelement und bildaufnahmegerät |
-
2014
- 2014-04-15 JP JP2014083363A patent/JP6237431B2/ja active Active
-
2015
- 2015-04-03 CN CN201580000816.7A patent/CN105229787B/zh active Active
- 2015-04-03 WO PCT/JP2015/060550 patent/WO2015159727A1/ja active Application Filing
- 2015-04-03 US US14/895,804 patent/US10453883B2/en active Active
-
2019
- 2019-09-18 US US16/575,098 patent/US10903256B2/en active Active
-
2020
- 2020-12-15 US US17/122,759 patent/US11282882B2/en active Active
-
2022
- 2022-02-17 US US17/674,641 patent/US11756974B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011176715A (ja) * | 2010-02-25 | 2011-09-08 | Nikon Corp | 裏面照射型撮像素子および撮像装置 |
JP2012173492A (ja) * | 2011-02-21 | 2012-09-10 | Sony Corp | 撮像素子および撮像装置 |
JP2014082310A (ja) * | 2012-10-16 | 2014-05-08 | Canon Inc | 固体撮像装置、固体撮像装置の製造方法、および撮像システム |
Also Published As
Publication number | Publication date |
---|---|
US20200013817A1 (en) | 2020-01-09 |
US11282882B2 (en) | 2022-03-22 |
CN105229787A (zh) | 2016-01-06 |
US20160118429A1 (en) | 2016-04-28 |
CN105229787B (zh) | 2019-08-09 |
JP2015204397A (ja) | 2015-11-16 |
US20210104567A1 (en) | 2021-04-08 |
US10453883B2 (en) | 2019-10-22 |
US10903256B2 (en) | 2021-01-26 |
JP6237431B2 (ja) | 2017-11-29 |
US20220173148A1 (en) | 2022-06-02 |
US11756974B2 (en) | 2023-09-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6237431B2 (ja) | 焦点検出装置、電子機器 | |
JP7264187B2 (ja) | 固体撮像装置およびその駆動方法、並びに電子機器 | |
US10658405B2 (en) | Solid-state image sensor, electronic apparatus, and imaging method | |
US10015426B2 (en) | Solid-state imaging element and driving method therefor, and electronic apparatus | |
KR102523203B1 (ko) | 고체 화상 센서 및 그 제조 방법, 및 전자 장치 | |
JP2021028981A (ja) | 固体撮像素子およびその製造方法、並びに電子機器 | |
JP5537905B2 (ja) | 撮像素子及び撮像装置 | |
KR20160100569A (ko) | 이미지 센서 및 이미지 센서를 포함하는 촬상 장치 | |
KR101621158B1 (ko) | 고체 촬상 장치 | |
JP2009158800A (ja) | 固体撮像素子及びこれを用いた撮像装置 | |
TWI567963B (zh) | 在彩色濾波器陣列上之光學隔離柵格 | |
KR20160008364A (ko) | 이미지 센서 및 이미지 센서를 포함하는 영상 촬영 장치 | |
JP2016127043A (ja) | 固体撮像素子及び電子機器 | |
US9261400B2 (en) | Focus detection apparatus, electronic apparatus, manufacturing apparatus, and manufacturing method | |
US9386203B2 (en) | Compact spacer in multi-lens array module | |
JP2010245198A (ja) | 撮像素子及びその製造方法 | |
JP2014029984A (ja) | 固体撮像素子及び撮像装置 | |
WO2017130725A1 (ja) | 焦点検出装置、撮像装置 | |
JP5750918B2 (ja) | 固体撮像素子及びこれを用いた撮像装置 | |
JP2016103513A (ja) | 撮像素子および撮像装置 | |
KR20170078627A (ko) | 고체 촬상 장치, 카메라 모듈, 및, 전자 기기 | |
JP7247975B2 (ja) | 撮像素子及び撮像装置 | |
JP2015159231A (ja) | 固体撮像装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201580000816.7 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15780261 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14895804 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 15780261 Country of ref document: EP Kind code of ref document: A1 |