WO2015156071A1 - 発光デバイスの製造方法 - Google Patents
発光デバイスの製造方法 Download PDFInfo
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- WO2015156071A1 WO2015156071A1 PCT/JP2015/056923 JP2015056923W WO2015156071A1 WO 2015156071 A1 WO2015156071 A1 WO 2015156071A1 JP 2015056923 W JP2015056923 W JP 2015056923W WO 2015156071 A1 WO2015156071 A1 WO 2015156071A1
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- WIPO (PCT)
- Prior art keywords
- cell
- emitting device
- light
- manufacturing
- quantum dots
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000011521 glass Substances 0.000 claims abstract description 52
- 239000002096 quantum dot Substances 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000012298 atmosphere Substances 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 abstract description 2
- 230000005284 excitation Effects 0.000 description 13
- 238000011946 reduction process Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 4
- 239000013081 microcrystal Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/18—Coatings for keeping optical surfaces clean, e.g. hydrophobic or photo-catalytic films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0006—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means to keep optical surfaces clean, e.g. by preventing or removing dirt, stains, contamination, condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
Definitions
- quantum dots that emit red visible light (fluorescence having a wavelength of 600 nm to 700 nm) when irradiated with ultraviolet to near ultraviolet excitation light having a wavelength of 300 to 440 nm or blue excitation light having a wavelength of 440 to 480 nm include particle diameters.
- CdSe microcrystals having a thickness of about 4.5 nm to 10 nm.
- the operation of introducing a dry gas such as nitrogen or argon and reducing the pressure again may be repeated several times after the atmosphere is reduced. By doing so, the moisture concentration and oxygen concentration in the cell 10 can be further reduced.
- This sealing step is preferably performed in a state where it is not exposed to the atmosphere after the reduction step. By doing so, the oxygen concentration and the water concentration in the internal space 14 can be lowered.
- an organic electroluminescent device having a desired luminous efficiency can be realized.
- the quantum dot light emitting device it is considered that the moisture in the cell is not consumed and continues to exist in the cell. Therefore, it is considered that high light emission efficiency is difficult to obtain in the quantum dot light emitting device.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Led Device Packages (AREA)
- Optical Filters (AREA)
Abstract
Description
発光デバイス1は、励起光が入射したときに励起光とは異なる波長の光を出射するデバイスである。発光デバイス1は、励起光と、励起光の照射により生じた光との混合光を出射するものであってもよい。
次に、発光デバイス1の製造方法の一例について説明する。
まず、セル10を用意する。セル10は、例えば、第1のガラス板11と第2のガラス板12との間に額縁状のガラス板からなる側壁部材13を配し、側壁部材13とガラス板11,12とを融着することにより作製することができる。側壁部材13とガラス板11,12との融着は、例えば、レーザー光線を照射することにより行うことができる。
次に、後述する量子ドット17の封入に先立って、セル10の内壁に吸着している水分を低減する低減工程を行う。具体的には、本実施形態では、セル10を300℃以上に加熱する。これにより、セル10に吸着している水分を低減する。
次に、セル10内に連通口15から量子ドット17を注入し、閉口材16を用いて連通口15を閉口することによってセル10を封止する。これにより、発光デバイス1を完成させることができる。
10 セル
11 第1のガラス板
12 第2のガラス板
13 側壁部材
14 内部空間
15 連通口
16 閉口材
17 量子ドット
Claims (7)
- 相互に間隔をおいて対向している第1及び第2のガラス板を備えるセルと、前記セル内に封入された量子ドットとを備える発光デバイスの製造方法であって、
前記量子ドットの封入に先立って、前記セルの内壁に吸着している水分を低減する低減工程を備える、発光デバイスの製造方法。 - 前記低減工程において、前記セルを300℃以上に加熱する、請求項1に記載の発光デバイスの製造方法。
- 前記低減工程において、前記セル内を減圧しながら前記セルを300℃以上に加熱する、請求項2に記載の発光デバイスの製造方法。
- 不活性ガス雰囲気下で前記低減工程を行う、請求項1~3のいずれか一項に記載の発光デバイスの製造方法。
- 前記低減工程を行った後、大気に暴露しないまま前記量子ドットの注入工程を行う、請求項1~4のいずれか一項に記載の発光デバイスの製造方法。
- 前記セルは、前記第1のガラス板と前記第2のガラス板との間に配されたガラス製の側壁部材をさらに備える、請求項1~5のいずれか一項に記載の発光デバイスの製造方法。
- 前記各ガラス板と前記側壁部材とを融着することにより前記セルを作製する、請求項6に記載の発光デバイスの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020167015885A KR20160146642A (ko) | 2014-04-11 | 2015-03-10 | 발광 디바이스의 제조 방법 |
CN201580007691.0A CN105980890A (zh) | 2014-04-11 | 2015-03-10 | 发光器件的制造方法 |
US15/035,494 US9691937B2 (en) | 2014-04-11 | 2015-03-10 | Light-emitting device manufacturing method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-081862 | 2014-04-11 | ||
JP2014081862A JP6221914B2 (ja) | 2014-04-11 | 2014-04-11 | 発光デバイスの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015156071A1 true WO2015156071A1 (ja) | 2015-10-15 |
Family
ID=54287651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/056923 WO2015156071A1 (ja) | 2014-04-11 | 2015-03-10 | 発光デバイスの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9691937B2 (ja) |
JP (1) | JP6221914B2 (ja) |
KR (1) | KR20160146642A (ja) |
CN (1) | CN105980890A (ja) |
TW (1) | TW201539796A (ja) |
WO (1) | WO2015156071A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63237026A (ja) * | 1987-03-26 | 1988-10-03 | Semiconductor Energy Lab Co Ltd | 液晶セルの乾燥方法 |
JPH11209149A (ja) * | 1998-01-23 | 1999-08-03 | Asahi Glass Co Ltd | 真空複層ガラス |
JP2001284172A (ja) * | 2000-03-28 | 2001-10-12 | Kyocera Corp | 電気二重層コンデンサ |
JP2012163936A (ja) * | 2011-01-18 | 2012-08-30 | Nippon Electric Glass Co Ltd | 発光デバイス、発光デバイス用セル及び発光デバイスの製造方法 |
JP2013218954A (ja) * | 2012-04-11 | 2013-10-24 | Sony Corp | 発光装置、表示装置および照明装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100376040C (zh) * | 2002-03-08 | 2008-03-19 | 松下电工株式会社 | 量子装置 |
WO2007143197A2 (en) * | 2006-06-02 | 2007-12-13 | Qd Vision, Inc. | Light-emitting devices and displays with improved performance |
JP2012514071A (ja) * | 2008-12-30 | 2012-06-21 | ナノシス・インク. | ナノ結晶および生成された組成物をカプセル化するための方法 |
US8568184B2 (en) * | 2009-07-15 | 2013-10-29 | Apple Inc. | Display modules |
US20110303940A1 (en) * | 2010-06-14 | 2011-12-15 | Hyo Jin Lee | Light emitting device package using quantum dot, illumination apparatus and display apparatus |
JP5724684B2 (ja) * | 2011-07-01 | 2015-05-27 | 日本電気硝子株式会社 | 発光デバイス用セル及び発光デバイス |
JP5724685B2 (ja) * | 2011-07-01 | 2015-05-27 | 日本電気硝子株式会社 | 発光デバイス用セルの製造方法及び発光デバイスの製造方法 |
CN103226259B (zh) * | 2013-04-09 | 2015-07-01 | 北京京东方光电科技有限公司 | 液晶显示面板、显示装置及液晶显示面板的制造方法 |
US9335023B2 (en) * | 2013-12-11 | 2016-05-10 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Quantum dot lens and manufacturing method thereof |
KR102132220B1 (ko) * | 2013-12-27 | 2020-07-10 | 삼성디스플레이 주식회사 | 양자점 광학 소자의 제조 방법 및 양자점 광학 소자를 포함한 백라이트 유닛 |
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2014
- 2014-04-11 JP JP2014081862A patent/JP6221914B2/ja not_active Expired - Fee Related
-
2015
- 2015-03-10 US US15/035,494 patent/US9691937B2/en not_active Expired - Fee Related
- 2015-03-10 KR KR1020167015885A patent/KR20160146642A/ko unknown
- 2015-03-10 CN CN201580007691.0A patent/CN105980890A/zh active Pending
- 2015-03-10 WO PCT/JP2015/056923 patent/WO2015156071A1/ja active Application Filing
- 2015-03-17 TW TW104108526A patent/TW201539796A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63237026A (ja) * | 1987-03-26 | 1988-10-03 | Semiconductor Energy Lab Co Ltd | 液晶セルの乾燥方法 |
JPH11209149A (ja) * | 1998-01-23 | 1999-08-03 | Asahi Glass Co Ltd | 真空複層ガラス |
JP2001284172A (ja) * | 2000-03-28 | 2001-10-12 | Kyocera Corp | 電気二重層コンデンサ |
JP2012163936A (ja) * | 2011-01-18 | 2012-08-30 | Nippon Electric Glass Co Ltd | 発光デバイス、発光デバイス用セル及び発光デバイスの製造方法 |
JP2013218954A (ja) * | 2012-04-11 | 2013-10-24 | Sony Corp | 発光装置、表示装置および照明装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20160146642A (ko) | 2016-12-21 |
TW201539796A (zh) | 2015-10-16 |
US9691937B2 (en) | 2017-06-27 |
US20160293795A1 (en) | 2016-10-06 |
JP6221914B2 (ja) | 2017-11-01 |
JP2015204153A (ja) | 2015-11-16 |
CN105980890A (zh) | 2016-09-28 |
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