WO2015149987A1 - Treiberbaugruppe - Google Patents
Treiberbaugruppe Download PDFInfo
- Publication number
- WO2015149987A1 WO2015149987A1 PCT/EP2015/053467 EP2015053467W WO2015149987A1 WO 2015149987 A1 WO2015149987 A1 WO 2015149987A1 EP 2015053467 W EP2015053467 W EP 2015053467W WO 2015149987 A1 WO2015149987 A1 WO 2015149987A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor switches
- driver assembly
- semiconductor
- plane
- switches
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
- H05K7/209—Heat transfer by conduction from internal heat source to heat radiating structure
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02K—DYNAMO-ELECTRIC MACHINES
- H02K11/00—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection
- H02K11/30—Structural association with control circuits or drive circuits
- H02K11/33—Drive circuits, e.g. power electronics
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02K—DYNAMO-ELECTRIC MACHINES
- H02K9/00—Arrangements for cooling or ventilating
- H02K9/02—Arrangements for cooling or ventilating by ambient air flowing through the machine
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
- H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
- H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
Definitions
- the invention relates to a driver assembly.
- the invention relates to the dissipation of heat from elements of the driver assembly.
- a control device for example, onboard a motor vehicle, is configured to provide a current or voltage to control a connected load.
- a three-phase AC voltage may be provided to control the direction of rotation and rotational speed of a connected electric motor.
- a driver assembly includes a plurality of semiconductor switches to provide the required current or voltage.
- the semiconductor switches are usually not lossless, so heat must be dissipated by them.
- the semiconductor switches are usually arranged in a row or in a matrix form. In this case, semiconductor switches, which are located in outer regions of the arrangement, cooled better than further inside semiconductor switch. Due to the different temperatures, the semiconductor switches can be electrically loaded differently, so that the total electrical load of the driver assembly can be reduced.
- the semiconductor switches can also age different degrees or fast, so that their failure probabilities are different. The probability of failure of the entire driver module can thereby be increased.
- supply lines to the semiconductor switches can be of different lengths, which may adversely affect electromagnetic compatibility (EMC), impedance or voltage drop in the supply line.
- EMC electromagnetic compatibility
- a driver assembly according to the invention comprises a plurality of semiconductor switches, which are arranged in a plane such that distances between adjacent semiconductor switches in the plane are equal in size and each semiconductor switch has the same number of adjacent semiconductor switches.
- the semiconductor switches may comprise, for example, bipolar transistors, field-effect transistors, MOSFETs, thyristors, switching diodes or IGBTs.
- the semiconductor switches are preferably discrete components that can be individually positioned in the plane. If each semiconductor switch emits the same thermal power, the same temperatures can be set on the semiconductor switches. A thermal energy input at the location of a semiconductor switch, due to adjacent semiconductor switches is due to their arrangement for all semiconductor switches the same size. The same temperatures can mean equal aging, equal loadings or equal failure probabilities for the semiconductor switches. The driver assembly can thereby be more reliable or resilient.
- the semiconductor switches are evenly distributed on a circular line.
- the arrangement of the semiconductor switches in the plane may be rotationally symmetric about a predetermined point. It is further preferred that this is an n-fold rotational symmetry, where n is the number of semiconductor switches used.
- spacings between the semiconductor switches are defined as the smallest distances from points of their outlines in the plane.
- a dot may be distinguished on each semiconductor switch, the distance between two semiconductor switches being defined as the distance between the associated dots.
- the excellent point may be, for example, a geometric center or a point that is most heated during operation of the semiconductor switch.
- the position of a semiconductor switch may be indicated by the position of the designated point.
- the distinguished points have the described relative distances, with rotational orientations of the Semiconductor switch in the plane can be freely selected. As a result, electrical supply lines to the semiconductor switches can advantageously be made short or with little crossing.
- the rotational orientations of the semiconductor switches to each other or with respect to a reference point of importance can in particular be aligned uniformly with respect to each other.
- a direction can be predetermined at each semiconductor switch, which preferably runs through the above-mentioned excellent point.
- the directions of the semiconductor switches may be parallel to each other or angles including the directions with a common point may be the same for all semiconductor switches.
- the driver assembly is at least comprised of a multi-phase inverter.
- a multi-phase inverter usually comprises a plurality of half bridges, each with two semiconductor switches.
- the polyphase inverter may be arranged in particular for controlling a polyphase electric motor.
- the inverter may in particular be provided on board a motor vehicle, for example for a steering or brake assistance, an electric rear axle steering, an electrical height adjustment (leveling-by-wire) and for electric drives.
- the inverter can be provided for two-wheelers, which usually have little space.
- each of the half bridges is electrically coupled to a further semiconductor switch as a phase separator, through which the corresponding formed by the half-bridge phase can be separated.
- a safe state can be generated in the event of a fault.
- each of the half-bridges is electrically coupled to a further semiconductor switch as a phase separator.
- the phase separator of the associated half-bridge in an electrical Provided downstream line. Such a phase separation can be provided in particular for an emergency running strategy, for example of an electrical steering or other type of support.
- the at least one phase separator is arranged in a plane parallel to the semiconductor switches.
- the at least one phase separator may be arranged on a different side of a semiconductor switch carrier element than the semiconductor switches.
- the carrier element is preferably a circuit board.
- the phase separators are arranged on the other side in a manner as described for the semiconductor switches.
- the phase separators may be arranged together with the semiconductor switches in a plane in a prescribed manner.
- phase separators and the semiconductor switches are arranged in different planes each on a circular line, wherein the circular line associated with the phase separator is surrounded in a plane passing through the plan view of the semiconductor switches associated circular line.
- a thermal load of a carrier material of the semiconductor switch and the phase separator exhibiting carrier element can be equalized.
- a possible temperature input to the semiconductor switches can be reduced.
- a compact arrangement of the semiconductor switches and the phase separator is possible.
- the circular lines have a common center axis passing through the planes. This allows a more uniform thermal load of the carrier material can be achieved.
- a heat sink for thermal coupling to the semiconductor switches and further preferably provided with the at least one phase separator, wherein the heat sink comprises a plurality of lying in a plane contact portions for contact with the semiconductor switches and more preferably on the at least one phase separator.
- the semiconductor switches and more preferably the at least one phase separator be cooled evenly and there may be cost advantages for material and assembly.
- the contact portions are encompassed by a contact surface, which has the shape of a circular disk.
- a surface of the heat sink facing the semiconductor switches, and more preferably the at least one phase separator, can thereby be formed in a simple and cost-saving manner.
- the contact portions are encompassed by a contact surface which has the shape of a regular polygon with as many corners as semiconductor switches and more preferably arranged in the same plane phase separator abut the heat sink.
- a cooling capacity of the heat sink can be improved.
- the attachment of the heat sink may be facilitated by its polygonal (polygonal) shape.
- the heat sink may further preferably be formed by a housing of a synchronous motor or alternatively flanged to the housing. The latter is particularly advantageous for a frontal mounting of the inverter along with high tightness requirements.
- the rotary arrangement of the semiconductor switch or the phase separator is also particularly advantageous for a direct connection of the inverter to a front side or contact side of a synchronous motor.
- contacting can take place by the shortest path by connecting the motor contacts to the carrier element or to carrier element contacts.
- the central free space of the semiconductor device can be advantageously utilized.
- a motor shaft end with integrated magnet can be passed through the free space by means of a hole cutout to a rotor position sensor, which is for example a Hall sensor and further preferably is arranged on a parallel to the support member further support member or board, a rotation angle to detect.
- the semiconductor switches, and more preferably the at least one phase separator comprise surface mounted devices, wherein the semiconductor switches, and more preferably the at least one phase separator, are electrically contacted by conductive traces and the heat sink is external to the plane lying projection for thermal coupling with at least one conductor track summarizes.
- the printed conductor can additionally be cooled, so that a "not spot" in the area of the driver assembly can be avoided in an improved manner
- the semiconductor switches and more preferably the at least one phase separator can be arranged in any surface-mountable housings, wherein in a particularly preferred embodiment Embodiment DirectFETs are used.
- each half-bridge is associated with a short-circuiting switch, which is electrically coupled to a line path which electrically interconnects the two semiconductor switches of the half-bridge, the short-circuiting switches being electrically connected to one another.
- a short circuit switch for example, an electric motor for use as a generator can be braked.
- deceleration up to a standstill of an electric motor can be the result of a safety requirement which, in the event of a fault, requires a severe or blocking motor system, which preferably corresponds to a safe state.
- a safety requirement or such a phase short circuit can be advantageously used for active rear wheel steering systems.
- the shorting switch is a MOSFET or a DirectFET. More preferably, the short-circuiting switches are arranged in a manner described above relating to the semiconductor switches or phase separators, and more preferably coupled to a heat sink. This arrangement and coupling is particularly recommended if the short-circuiting switches are to be cooled. Otherwise, as described above arrangement of the short circuit switch, which are preferably arranged in a different plane than the semiconductor switches, not mandatory.
- conductor tracks for the electrical connection of terminals of the semiconductor switches have substantially equal surfaces. Due to the specified arrangement of the semiconductor switches in the plane, it is possible to design the electrical connections geometrically similar. In particular, it is preferred that the interconnects to the different semiconductor switches are substantially the same length, the same width and the same thickness. Electrical characteristics ka such as an electrical resistance, an impedance or an effect on electromagnetic interference fields can correspond to each other. Furthermore, the currents of the individual phases can be adapted to each other. Furthermore, the lowest possible EMC emission can be achieved. If the semiconductor switches are electrically charged uniformly, thermal powers in the region of the printed conductors can also correspond to one another. These preferred embodiments of printed conductors are preferably applicable to printed conductors for electrically connecting terminals of the phase separator (s) and / or the short-circuiting switches.
- the driver assembly comprises a predetermined number of semiconductor switches, each semiconductor switch being associated with one of at least two of the driver assemblies described above.
- the semiconductor switches of the driver assembly can also be arranged in two or more groups, wherein the described AnOrdnungsvorschriften apply to each group.
- the two groups can be arranged in one plane or in different planes. In one embodiment, the levels of the groups are parallel to each other.
- a redundant inverter circuit with phase separator or short-circuit switch can be provided according to one of the above-described embodiments.
- FIG. 1 shows an arrangement of semiconductor switches of a driver assembly
- FIG. 2 shows an alternative arrangement of the semiconductor switches of FIG. 1;
- Figure 3 is a circuit diagram of a three-phase inverter in the arrangement of Figure 1;
- Figure 4 is a circuit diagram of a three-phase inverter shown in the arrangement of Figure 1 with phase separator in the arrangement of Figure 1
- Figure 5 is a circuit diagram of a three-phase inverter shown in the arrangement of Figure 1 with shorting switch
- FIG. 6 is a side view of an embodiment of the driver assembly of FIG.
- FIG. 7 shows a representation of temperatures at the three-phase inverter of FIG. 3
- FIG. 1 shows a schematic representation of a driver module 100.
- the driver module 100 comprises a number of semiconductor switches 105, wherein in FIG. 1, purely by way of example, six semiconductor switches 105 are provided.
- the semiconductor switches 105 are of the same type and arranged in a plane 1 10 two-dimensional. In this case, the arrangement is such that each semiconductor switch 105 has the same number of adjacent semiconductor switches 105 and distances between adjacent semiconductor switches 105 are the same in each case.
- the semiconductor switches 105 are equally distributed on a circular line 1 15 about a center 120.
- the semiconductor switch 105 are thus offset on the circular line 1 15 by 60 ° to each other. This arrangement has a 6-fold rotational symmetry with respect to the center point 120.
- the arrangement of the semiconductor switch 105 is selected so that a common heat sink 125 for thermal coupling to the semiconductor switches 105 may have a contact surface 130 which is rotationally symmetric to the center 120 and parallel to the plane 1 10.
- the contact surface 130 of the heat sink 125 has the shape of a circular disk;
- the contact surface 130 may also have the shape of a regular polygon, wherein it is preferred that the number of corners corresponds to the number of applied semiconductor switches 105.
- the arrangement of the semiconductor switch 105 is selected mainly for thermal reasons. Small errors or tolerances in the arrangement of the semiconductor switches 105 can therefore be generally accepted. Is an increased precision of Orientation is required, so at each semiconductor switch 105, a point 135 be distinguished, with respect to which the positions or distances between the semiconductor switches 105 are sized.
- each of the designated locations corresponds to a geometric center of the surface of the semiconductor switches, and the designated locations 135 are respectively on the circle 15, where distances between the locations 135 of adjacent semiconductor switches 105 adjacent to each other are equal .
- the spacings of the semiconductor switches 105 are defined with respect to each other with respect to smallest distances of their outlines in the plane. In the illustrated embodiment, rotational orientations of the semiconductor switches 105 to each other in the plane 1 10 are selected differently.
- each semiconductor switch 105 with respect to the center 120 is also taken into account. This may be useful, for example, if outlines of the semiconductor switch 105 in the plane 1 10 are different from those shown in Figure 1 elongated.
- a direction 140 may be predetermined on the semiconductor switch 105, which direction preferably extends from the designated position 135.
- the directions 140 may be aligned with each other in other ways, such as by the directions 140 being parallel or in pairs perpendicular to each other.
- each semiconductor switch 105 has exactly two adjacent semiconductor switch 105, namely a right and a left on the circle 1 15. Further away semiconductor switch 105, between which on the circle line 15 1 another semiconductor switch 105, are considered not adjacent.
- distances between non-contiguous semiconductor switches are at least 1.5 times the spacing between adjacent semiconductor switches 105. This condition can be used to ensure that the influence of heat of a semiconductor switch 105 on a non-adjacent semiconductor switch 105. conductor switch 105 is negligibly small. In the illustrated embodiment of six semiconductor switches 105 on the circle line 15, non-adjacent semiconductor switches 105 are, for example, at least 1.7 times as far apart from each other as adjacent semiconductor switches 105.
- FIG. 2 shows an alternative arrangement of the semiconductor switches 105 of the driver assembly 100 of FIG.
- a first group 205 and a second group 210 are formed, each comprising a plurality of semiconductor switches 105 of the driver assembly 100.
- three semiconductor switches 105 are present in each group 205, 210.
- the semiconductor switches 105 are arranged according to the specifications which were explained above with reference to the arrangement of FIG.
- each group 205, 210 is associated with a separate heat sink 125;
- a single heat sink 125 may be used if all the semiconductor switches 105 are in the same plane 110.
- the semiconductor switches 105 may also be in parallel planes 110, with the heat sinks 125 each extending in the direction away from the other plane 110.
- the semiconductor switches 105 of the first group 205 may be disposed on the top and the semiconductor switches 105 of the second group 210 may be disposed on the underside of a circuit board to which the semiconductor switches 105 are mechanically and electrically attached, with the heat sinks 125 in opposite directions from the board extend away.
- Figure 3 shows a circuit diagram of a three-phase inverter 300.
- the representation is hybrid, by the semiconductor switch 105 and its compounds are shown as a circuit diagram, while the arrangement of the semiconductor switch 105 is to be interpreted geometrically.
- the illustrated embodiment is based on the example of FIG. 1. Elements of the three-phase inverter 300 that go beyond the driver board 100 are not shown.
- a first supply line 305 with a high potential and a second supply line 310 with a low potential are connected.
- Two semiconductor switches 105 each form a half-bridge between the leads 305 and 310. taps of the half bridges are led out as output lines 315 to 325.
- a three-phase electric motor can be connected, whose torque, speed or direction of rotation can be controlled by appropriately driving the semiconductor switch 105.
- Such an electric motor can be used, for example, for control tasks on board a motor vehicle, for example in a steering or brake assistance.
- the connections between the semiconductor switches 105 are not shown without crossing, it can be seen that the leads 305, 310 and output leads 315 through 325 can be made geometrically similar.
- the lengths of corresponding lines 305 to 325 may correspond to each other. In this case, only the parts of the lines 305 to 325 are taken into account, which lie in a radius around the center, not shown, 120, wherein the perimeter touches each of the radially outermost points of the semiconductor switch 105.
- FIG. 4 and FIG. 5 each show a circuit diagram of a three-phase inverter 300 extended by a phase separation circuit or a short circuit.
- the illustration is equivalent to FIG. 3, and therefore the semiconductor switch 105 is referenced to FIG referenced section.
- FIG. 4 shows in particular the three-phase inverter 300 with a phase separation circuit comprising three further semiconductor switches 106 designed as phase separators, which are each assigned to a half bridge consisting of two semiconductor switches 105 and electrically coupled thereto.
- the phase separators 106 are arranged in a plane parallel to the plane comprising the arrangement of the semiconductor switches 105.
- the phase separators 106 are disposed on a different side of a board than the semiconductor switches 105.
- the respective phase separator 106 is electrically coupled to the corresponding half-bridge via the first 315 or second 320 or third output line 325 assigned to the respective half-bridge.
- the phase separator 106 is thus provided downstream of the respective half-bridge.
- the arrangement of the phase separator 106 takes place in a manner corresponding to the arrangement of the semiconductor switch 105 described above Way, wherein the phase separators 106 are arranged in a plan view of the planes on an identical circular line as the semiconductor switch 105, wherein a phase separator 106 between two adjacent semiconductor switches 105 is arranged.
- the phase separators 106 are arranged on a circular line which lies in a plan view of the arrangement levels within the circular line having the semiconductor switches 105.
- a circuit board including the semiconductor switches 105 and the phase separators 106 may be further equalized in terms of thermal stress.
- FIG. 5 shows in particular the three-phase inverter 300 with a short-circuit comprising three further semiconductor switches 107 designed as short-circuiting switches, which are each assigned to a half-bridge consisting of two semiconductor switches 105 and are electrically coupled to this and to each other.
- the short-circuiting switches 107 are arranged in a plane parallel to the plane comprising the arrangement of the semiconductor switches 105.
- the phase separators 107 are disposed on a different side of a board than the semiconductor switches 105.
- the respective short-circuit switch 107 is electrically coupled to the line connecting the two semiconductor switches 105 forming a half-bridge and to the other short-circuit switches 107 via a common connecting line 330.
- the short-circuit switch 107 is thus provided downstream of the semi-bridge forming semiconductor switches 105.
- the respective short-circuit switch 107 is arranged near its connection point for connection to the respective line in order to use the shortest possible connecting lines.
- the arrangement of the short-circuiting switch 107 may according to another preferred, not shown embodiment in one of the arrangement of the phase separator 106 corresponding manner described above, if, for example, a cooling of the short-circuit switch 107 should be required.
- FIG. 6 shows a side view of an embodiment of the driver assembly 100 of FIG. 1.
- a circuit board 400 has a top 405 and a bottom 410. On top 405, one or more tracks 415 extend electrically are connected to the semiconductor switch 105.
- the semiconductor switch 105 is surface-mounted and is also located on the top 405 of the board 400th
- a contact portion 420 of the contact surface 130 of the heat sink 125 abuts against a contact surface 425 of the semiconductor switch 105 facing away from the circuit board 400 in order to produce a thermal coupling.
- electrical insulation or height compensation can be provided between the contact surface 425 and the contact portion 420, a planteleitpad, a thermal paste, a mica screen or other element which preferably has a good heat transfer at preferably the lowest possible electrical conductivity.
- the heat sink 125 may include a projection 430 that lies outside the plane 110 that includes the contact portion 420.
- the protrusion 430 extends toward the board 400 and is thermally coupled to the track 415.
- a conductor track 415 is thermally connected, which comprises a feed line or output line 305 to 325; however, a control line may also be included.
- between the projection 430 and the track 415 may be provided an element for height compensation, to improve the heat conduction or electrical insulation.
- FIG. 7 shows in the upper area a representation of temperatures on a circular arrangement of six semiconductor switches 105, which in the present example are used as driver subassembly 100 for the three-phase inverter 300 of FIG.
- a known rectangular arrangement of semiconductor switches 105 is shown.
- the semiconductor switches 105 are turned on and off at substantially the same frequencies and duty ratios, so that each semiconductor switch 105 converts practically the same electric power into heat output. Shown is a plan view of the plane 1 10. The semiconductor switches 105 are on their tops in contact with a heat sink 125. Geometric areas whose temperatures fall within a common area are together shown men fatigued, with exemplary mean values of the temperature ranges are numerically entered in ° C.
- each semiconductor switch 105 includes only a few temperature ranges and that the surfaces of the semiconductor switches 105 have substantially the same temperature ranges.
- the temperature load of each semiconductor switch 105 and the temperature loads of all semiconductor switches 105 are therefore highly homogeneous. Thereby, aging and failure probabilities of the semiconductor switches 105 of the driver assembly 100 may be substantially equal over their operating times.
- the semiconductor switches 105 can thereby be dimensioned improved to a predetermined electrical load. This can be advantageous in particular in a safety-critical application, such as in the control of a servomotor, for example for steering or brake assistance on board a motor vehicle.
- the temperatures at the surfaces of the semiconductor switches 105 are higher overall.
- the surfaces of the semiconductor switches 105 each include more temperature ranges that are further apart.
- the semiconductor switches 105 have highly different highest and lowest temperatures. It is expected that the highest temperature load semiconductor switch 105 ages fastest and has the highest probability of failure. However, the aging and probability of failure of each semiconductor switch 105 is difficult to determine due to the large temperature gradients on the surfaces of the semiconductor switches 105, so that the durability of the arrangement shown may be subject to great uncertainty. Furthermore, less power can be permanently switched through this inverter arrangement, since reaching the limit temperature of a single semiconductor switch 105 defines the shutdown or degradation limit of the entire assembly. REFERENCE CHARACTERS
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Inverter Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/129,447 US9917533B2 (en) | 2014-03-31 | 2015-02-19 | Driver assembly |
JP2016553660A JP6506771B2 (ja) | 2014-03-31 | 2015-02-19 | ドライバアセンブリ |
CN201580005028.7A CN106416446B (zh) | 2014-03-31 | 2015-02-19 | 驱动器组件 |
KR1020167029778A KR20160138212A (ko) | 2014-03-31 | 2015-02-19 | 드라이버 어셈블리 |
EP15707572.2A EP3127408A1 (de) | 2014-03-31 | 2015-02-19 | Treiberbaugruppe |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102014205956.9 | 2014-03-31 | ||
DE102014205956.9A DE102014205956A1 (de) | 2014-03-31 | 2014-03-31 | Treiberbaugruppe |
Publications (1)
Publication Number | Publication Date |
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WO2015149987A1 true WO2015149987A1 (de) | 2015-10-08 |
Family
ID=52598726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/EP2015/053467 WO2015149987A1 (de) | 2014-03-31 | 2015-02-19 | Treiberbaugruppe |
Country Status (7)
Country | Link |
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US (1) | US9917533B2 (de) |
EP (1) | EP3127408A1 (de) |
JP (1) | JP6506771B2 (de) |
KR (1) | KR20160138212A (de) |
CN (1) | CN106416446B (de) |
DE (1) | DE102014205956A1 (de) |
WO (1) | WO2015149987A1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102014205957A1 (de) * | 2014-03-31 | 2015-10-01 | Lemförder Electronic GmbH | Treiberbaugruppe |
CN105552037B (zh) * | 2015-12-18 | 2020-04-24 | 国网智能电网研究院 | 一种压接式igbt模块 |
FR3061627B1 (fr) * | 2016-12-29 | 2019-09-06 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Architecture d'un commutateur triphase |
DE102018201422A1 (de) * | 2018-01-30 | 2019-08-01 | Brose Fahrzeugteile Gmbh & Co. Kommanditgesellschaft, Bamberg | Elektronisches Steuergerät |
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JP2892957B2 (ja) * | 1994-12-09 | 1999-05-17 | 本田技研工業株式会社 | 減速機付モータ |
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GB2462940B8 (en) * | 2009-09-03 | 2012-03-28 | Protean Holdings Corp | Electric motor and electric generator. |
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CN103404005B (zh) * | 2011-03-04 | 2015-12-09 | 三菱电机株式会社 | 电动机驱动装置 |
GB2515318B (en) * | 2013-06-19 | 2016-05-18 | Protean Electric Ltd | Inverter for an electric motor or generator |
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2014
- 2014-03-31 DE DE102014205956.9A patent/DE102014205956A1/de not_active Withdrawn
-
2015
- 2015-02-19 EP EP15707572.2A patent/EP3127408A1/de not_active Withdrawn
- 2015-02-19 CN CN201580005028.7A patent/CN106416446B/zh not_active Expired - Fee Related
- 2015-02-19 KR KR1020167029778A patent/KR20160138212A/ko not_active Application Discontinuation
- 2015-02-19 WO PCT/EP2015/053467 patent/WO2015149987A1/de active Application Filing
- 2015-02-19 JP JP2016553660A patent/JP6506771B2/ja not_active Expired - Fee Related
- 2015-02-19 US US15/129,447 patent/US9917533B2/en not_active Expired - Fee Related
Patent Citations (6)
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EP0697759A1 (de) * | 1994-08-04 | 1996-02-21 | Honda Giken Kogyo Kabushiki Kaisha | Motor mit Reduktionsgetriebe |
EP1993192A1 (de) * | 2006-02-21 | 2008-11-19 | Mitsubishi Electric Corporation | Elektrische drehmaschine mit eingebauter steuerung |
US20110067945A1 (en) * | 2009-09-24 | 2011-03-24 | Mitsubishi Electric Corporation | Electric power-steering apparatus motor apparatus |
US20130141871A1 (en) * | 2010-11-02 | 2013-06-06 | Mitsubishi Electric Corporation | Power module for electric power steering and electric power steering drive control apparatus using the same |
WO2013118670A1 (ja) * | 2012-02-06 | 2013-08-15 | 三菱電機株式会社 | 機電一体モジュール |
DE112013000856T5 (de) * | 2012-02-06 | 2014-11-06 | Mitsubishi Electric Corporation | Mechanisch und elektrisch integriertes Modul |
Also Published As
Publication number | Publication date |
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JP2017518628A (ja) | 2017-07-06 |
CN106416446B (zh) | 2019-07-30 |
KR20160138212A (ko) | 2016-12-02 |
CN106416446A (zh) | 2017-02-15 |
JP6506771B2 (ja) | 2019-04-24 |
DE102014205956A1 (de) | 2015-10-15 |
US20170110984A1 (en) | 2017-04-20 |
EP3127408A1 (de) | 2017-02-08 |
US9917533B2 (en) | 2018-03-13 |
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