WO2015129302A1 - 半導体用複合基板のハンドル基板 - Google Patents
半導体用複合基板のハンドル基板 Download PDFInfo
- Publication number
- WO2015129302A1 WO2015129302A1 PCT/JP2015/050577 JP2015050577W WO2015129302A1 WO 2015129302 A1 WO2015129302 A1 WO 2015129302A1 JP 2015050577 W JP2015050577 W JP 2015050577W WO 2015129302 A1 WO2015129302 A1 WO 2015129302A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- handle substrate
- pores
- handle
- polycrystalline alumina
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 125
- 239000002131 composite material Substances 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 239000011148 porous material Substances 0.000 claims abstract description 49
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 48
- 239000002245 particle Substances 0.000 claims description 26
- 238000005245 sintering Methods 0.000 claims description 14
- 230000003746 surface roughness Effects 0.000 claims description 11
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 238000005304 joining Methods 0.000 abstract description 6
- 238000005498 polishing Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 15
- 239000000843 powder Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 238000010304 firing Methods 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000000137 annealing Methods 0.000 description 11
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 239000002002 slurry Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000010432 diamond Substances 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000001994 activation Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002612 dispersion medium Substances 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011164 primary particle Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- ADQQGJLCEXHTRW-UHFFFAOYSA-N 1-(dimethylamino)hexan-1-ol Chemical compound CCCCCC(O)N(C)C ADQQGJLCEXHTRW-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910008065 Si-SiO Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910006405 Si—SiO Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- -1 ammonia peroxide Chemical class 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- XTDYIOOONNVFMA-UHFFFAOYSA-N dimethyl pentanedioate Chemical compound COC(=O)CCCC(=O)OC XTDYIOOONNVFMA-UHFFFAOYSA-N 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000003349 gelling agent Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
- C04B35/111—Fine ceramics
- C04B35/115—Translucent or transparent products
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
- C04B35/62675—Thermal treatment of powders or mixtures thereof other than sintering characterised by the treatment temperature
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
- C04B35/6268—Thermal treatment of powders or mixtures thereof other than sintering characterised by the applied pressure or type of atmosphere, e.g. in vacuum, hydrogen or a specific oxygen pressure
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
- C04B37/005—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts consisting of glass or ceramic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3244—Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/549—Particle size related information the particle size being expressed by crystallite size or primary particle size
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/963—Surface properties, e.g. surface roughness
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/04—Ceramic interlayers
- C04B2237/06—Oxidic interlayers
- C04B2237/062—Oxidic interlayers based on silica or silicates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
Definitions
- the present invention relates to a handle substrate of a composite substrate for semiconductor.
- SOQ Silicon Quartz
- SOG Silicon Glass
- SOS Silicon Sapphire
- a transparent wide gap such as SOI, GaN, ZnO, diamond, AlN, etc.
- a bonded wafer obtained by bonding a semiconductor to a donor substrate such as silicon is known.
- SOQ, SOG, SOS, and the like are expected to be applied to projectors, high-frequency devices, and the like because of the insulation and transparency of the handle substrate.
- bonded wafers in which a wide gap semiconductor thin film is combined with a handle substrate are expected to be applied to high performance lasers and power devices.
- a method of forming a silicon region on a base substrate by epitaxial growth has been the mainstream, but in recent years, a method of forming a silicon region by direct bonding has been developed, which contributes to improving the performance of semiconductor devices (Patent Documents 1, 2, and 3). ).
- polycrystalline translucent alumina which has been used as arc tubes for high-intensity discharge lamps and dummy wafers in semiconductor manufacturing equipment, is equivalent to sapphire by using high-purity raw materials and firing it closely in a high-temperature reducing atmosphere.
- an expensive crystal growth process is not required while having excellent characteristics such as high insulation, low dielectric loss, and high thermal conductivity (Patent Documents 4, 5, and 6).
- the bonding surface When the handle substrate and the silicon layer are directly bonded, the bonding surface needs to be closely attached at the atomic level, and thus the surface roughness Ra needs to be small.
- the surface roughness Ra of the bonding surface is required to be 3 nm or less. This can be achieved by precision polishing such as CMP processing, but when translucent polycrystalline alumina is used as the material of the handle substrate, since pores are included between the crystal particles, the pores are exposed on the polished surface, It becomes a pit. It is inevitable that these pores are contained in a certain amount (practically 0.01% or more) in a base substrate using a polycrystalline material, and it is found that this causes a lack of bonding strength due to deterioration of surface roughness. It was.
- the object of the present invention is to suppress a reduction in bonding strength due to pits exposed on the surface after precision polishing of the bonding surface when the handle substrate of the composite substrate for semiconductor is made of polycrystalline alumina, and to increase the bonding strength with the donor substrate. It is to improve.
- the present invention is a handle substrate of a composite substrate for semiconductor,
- the handle substrate is made of polycrystalline alumina, and the porosity of the polycrystalline alumina is 0.01% or more and 0.1% or less, and the size is 0.5 ⁇ m or more included in the surface region on the bonding surface side of the handle substrate.
- the number of pores is not less than 0.5 times the number of pores of 0.1 ⁇ m or more and 0.3 ⁇ m or less included in the surface region.
- the present invention also relates to a composite substrate for semiconductor, comprising the handle substrate and a donor substrate bonded to the bonding surface of the handle substrate directly or via a bonding region. .
- the present inventor studied and formed a handle substrate made of polycrystalline alumina.
- Polycrystalline alumina has a microstructure in which a large number of fine particles are bound.
- pores were exposed on the surface of the handle substrate after precision polishing, resulting in pits and peeling from the donor substrate.
- the porosity of polycrystalline alumina is practically 0.01% or more.
- the present inventor further investigated the relationship between the pore size and the fine pits remaining on the joint surface after precision polishing.
- the porosity of the polycrystalline alumina is reduced to 0.1% or less, even if the porosity remains 0.01% or more, the pores having a size of 0.5 ⁇ m or more.
- FIG. 6C is a schematic diagram showing a composite substrate 6A obtained by directly bonding the donor substrate 5 on the handle substrate 1.
- FIG. It is a schematic diagram which shows the example of a calculation system of an average particle diameter.
- the handle substrate of the present invention is made of polycrystalline alumina. Since polycrystalline alumina provides a very dense sintered body, cracks and cracks in the handle substrate are unlikely to occur.
- the alumina purity of the polycrystalline alumina is 99.9% or higher.
- the alumina purity of polycrystalline alumina is determined by dissolving alumina powder with sulfuric acid by pressure acid decomposition, and analyzing the solution by ICP emission spectroscopic analysis.
- the porosity of the polycrystalline alumina constituting the handle substrate is set to 0.01% or more and 0.1% or less. It is difficult for the porosity to be less than 0.01% by the usual method, and it is practical to set the porosity to 0.01% or more. Further, when the porosity of the polycrystalline alumina exceeds 0.1%, even if the ratio of the number of pores having a size of 0.5 ⁇ m or more is kept low, peeling easily occurs due to pits on the joint surface of the handle substrate. From this viewpoint, the porosity of the polycrystalline alumina is 0.1% or less, more preferably 0.05% or less, and particularly preferably 0.01%.
- the porosity of the polycrystalline alumina constituting the handle substrate is determined by measuring the number and area of pores on the polished surface by observing with a 1200 ⁇ laser microscope after polishing the substrate surface by CMP processing. Then, it is calculated by [total pore area / observed area].
- the observation field of view is 0.2 mm ⁇ 0.2 mm, and nine fields of the same substrate are observed.
- the number of pores having a size of 0.5 ⁇ m or more included in the surface region on the bonding surface side of the handle substrate is set to 0 of the number of pores having a size of 0.1 ⁇ m or more and 0.3 ⁇ m or less included in this surface region.
- the number of pores having a size of 0.5 ⁇ m or more included in the surface region on the bonding surface side of the handle substrate is set to 0 of the number of pores having a size of 0.1 ⁇ m or more and 0.3 ⁇ m or less included in this surface region. It is preferably 3 times or less, and more preferably 0.1 times or less.
- the ratio of the number of pores having a size of 0.5 ⁇ m or more contained in the surface region on the bonding surface side of the handle substrate / the number of pores having a size of 0.1 ⁇ m or more and 0.3 ⁇ m or less contained in the surface region may be used, but it is often 0.05 times or more.
- the size of pores and the number of pores included in the surface region on the bonding surface side of the handle substrate are measured by observing with a 1200 times laser microscope after polishing the substrate surface by CMP processing.
- the observation field is 0.2 mm ⁇ 0.2 mm, and nine fields of the same substrate are observed. Then, the number of pores having a size of 0.5 ⁇ m or more in the observation visual field and the number of pores having a size of 0.1 to 0.3 ⁇ m are counted. Then, the ratio of the number of pores is calculated.
- the counting of pores with a size of less than 0.1 ⁇ m is excluded because it is too fine compared to the field of view and counting is difficult, and the influence on the surface state can be ignored.
- the pore size is determined as follows. That is, in the observation image of the handle substrate by the laser microscope, a straight line is drawn to cross the pores. At this time, a plurality of straight lines can be drawn, but the straight line is drawn so that the length of the straight line passing over the pores is maximized, and the maximum length is defined as the pore size.
- the average density of pores having a size of 0.5 ⁇ m or more included in the surface region on the bonding surface side of the handle substrate is preferably 500 / mm 2 or less, and 240 / mm 2 or less. Further preferred.
- the surface of the substrate is polished by CMP, and then observed with a 1200 ⁇ laser microscope, the number and size of pores on the polished surface are measured, and converted to units / mm 2 units.
- the microscopic surface roughness Ra of the bonding surface is 3.0 nm or less, which can further increase the bonding force to the donor substrate. From this viewpoint, it is more preferable that the microscopic centerline average surface roughness Ra of the joint surface is 1.0 nm or less.
- Ra is a numerical value calculated by imaging an exposed surface of each crystal particle appearing on the surface with an AFM (Atomic Force Microscope) and in accordance with JIS B0601.
- the average particle diameter of the polycrystalline alumina constituting the handle substrate is 1 to 35 ⁇ m. If this average particle size is small, the processing speed during the thickness processing by a grinder or the like is slowed, and it is easy to place the grains during subsequent polishing, resulting in poor surface roughness. On the other hand, when the average particle size is large, microcracks are generated during sintering, and the surface roughness is deteriorated. By setting the average particle size in the above range, the surface roughness Ra can be reduced, and the bonding strength of the donor substrate by intermolecular force can be easily improved.
- the size and thickness of the handle substrate are not particularly limited, but those near the normal SEMI / JEITA standard are easy to handle due to handling. Further, the thickness of the handle substrate is preferably 0.3 mm or more, and more preferably 1.5 mm or less.
- a predetermined sintering aid is added to a high-purity alumina powder having a purity of 99.9% or more (preferably 99.95% or more) and sintered.
- the sintering aid is discharged at the time and during the annealing process.
- high-purity alumina powder include high-purity alumina powder manufactured by Daimei Chemical Co., Ltd.
- the polycrystalline alumina constituting the handle substrate is translucent polycrystalline alumina.
- translucent polycrystalline alumina refers to those having a total light transmittance of 15% or more in the visible light range.
- the average particle diameter (primary particle diameter) of the raw material powder is not particularly limited, but is preferably 0.6 ⁇ m or less, and more preferably 0.4 ⁇ m or less from the viewpoint of densification during low-temperature sintering.
- the average particle diameter of the raw material powder is 0.3 ⁇ m or less.
- the lower limit of the average particle size is not particularly limited.
- the average particle diameter of the raw material powder can be determined by direct observation of the raw material powder by SEM (scanning electron microscope).
- the average particle diameter of the raw material powder is the (longest axis length + shortest axis length) / 2 of the primary particles excluding the secondary agglomerated particles on the SEM photograph (magnification: X30000, arbitrary two fields of view) / 2.
- N 500 average value.
- the polycrystalline alumina sintering aid comprises 200-800 ppm of ZrO 2 , 150-300 ppm of MgO and 10-30 ppm of Y 2 O 3 .
- MgO molecular sieve
- ZrO 2 and Y 2 O 3 are added in the above range, after sintering, the so-called triple point pores of the grain boundary are filled with ZrO 2 , which is effective in reducing the number of pores exceeding 0.5 ⁇ m. is there. This effect becomes significant when hot press firing.
- the method for forming the handle substrate is not particularly limited, and may be any method such as a doctor blade method, an extrusion method, or a gel casting method.
- the substrate is manufactured using the following doctor blade method.
- a polyvinyl butyral resin (PVB resin) or acrylic resin as a binder is dispersed in a dispersion medium together with a plasticizer and a dispersant to prepare a slurry.
- the dispersion medium is dried to solidify the slurry.
- a plurality of obtained tapes are stacked, press-laminated or CIP-laminated to obtain a substrate-shaped molded body having a desired thickness. Further, a calcined body is obtained by calcining in the air at a temperature of 1000 to 1300 ° C.
- the sintering temperature is preferably 1700 to 1900 ° C., more preferably 1750 to 1850 ° C. from the viewpoint of densification of the sintered body.
- the annealing temperature is preferably set to the highest temperature during firing + 50 ° C. to the highest temperature ⁇ 50 ° C., and the highest temperature during firing to the highest temperature + 50 ° C. More preferably, it is set to ° C.
- the annealing time is preferably 1 to 6 hours.
- the substrate is placed on a flat plate made of a refractory metal such as molybdenum. At that time, it is possible to leave a gap of 5 to 10 mm above the substrate to discharge the sintering aid. This is preferable from the viewpoint of facilitating the formation and facilitating the grain growth. This is because pores can be discharged due to grain boundary movement accompanying grain growth, and as a result, the number of pores having a size of 0.5 ⁇ m or more in the surface region can be reduced.
- a refractory metal such as molybdenum
- the sintering temperature during such hot pressing is preferably 1300 to 1800 ° C, more preferably 1450 to 1650 ° C.
- the pressure is preferably 10 to 30 MPa.
- the atmosphere during firing is preferably Ar gas, N 2 gas, or vacuum ( ⁇ 20 Pa).
- the holding time at the sintering temperature during hot pressing is preferably 2 to 8 hours.
- the surface roughness Ra is reduced by precision polishing the blank substrate.
- a CMP (Chemical Mechanical Polishing) process is generally used.
- the polishing slurry used for this a slurry in which abrasive grains having a particle size of 30 nm to 200 nm are dispersed in an alkali or neutral solution is used.
- the abrasive material include silica, alumina, diamond, zirconia, and ceria, which are used alone or in combination.
- a hard urethane pad, a nonwoven fabric pad, and a suede pad can be illustrated as a polishing pad.
- the annealing temperature is preferably 1200 to 1600 ° C.
- the annealing time is preferably 2 to 12 hours.
- the composite substrate of the present invention can be used for a light emitting element for a projector, a high frequency device, a high performance laser, a power device, a logic IC, and the like.
- the composite substrate includes the handle substrate of the present invention and a donor substrate.
- the material of the donor substrate is not particularly limited, but is preferably selected from the group consisting of silicon, aluminum nitride, gallium nitride, zinc oxide, and diamond.
- the thickness of the donor substrate is not particularly limited, but a substrate in the vicinity of the normal SEMI / JEITA standard is easy to handle because of handling.
- the donor substrate may have the above-described material and may have an oxide film on the surface. This is because if ion implantation is performed through the oxide film, an effect of suppressing channeling of implanted ions can be obtained.
- the oxide film preferably has a thickness of 50 to 500 nm.
- a donor substrate having an oxide film is also included in the donor substrate, and is referred to as a donor substrate unless otherwise distinguished.
- the donor substrate 5 is bonded onto the bonding surface 1a of the handle substrate 1 via the bonding region 4.
- the donor substrate 5 is directly bonded on the bonding surface 1 a of the handle substrate 1.
- the technique used for bonding is not particularly limited, but for example, direct bonding by surface activation or a substrate bonding technique using an adhesive region is used.
- a low-temperature bonding technique using interface activation is preferably used. After surface activation with Ar gas in a vacuum state of about 10 ⁇ 6 Pa, a single crystal material such as Si can be bonded to a polycrystalline material through an adhesion region such as SiO 2 at room temperature.
- SiO 2 , Al 2 O 3 , and SiN are used in addition to resin adhesion.
- Example 1 In order to confirm the effect of the present invention, a handle substrate 1 using a translucent alumina sintered body was prototyped. First, a blank substrate made of a translucent alumina sintered body was prepared. Specifically, a slurry in which the following components were mixed was prepared.
- the slurry was cast in an aluminum alloy mold at room temperature and then left at room temperature for 1 hour. Subsequently, it was left to stand at 40 ° C. for 30 minutes, and after solidification proceeded, it was released. Furthermore, it was left to stand at room temperature and then at 90 ° C. for 2 hours to obtain a plate-like powder compact.
- the obtained powder compact was calcined at 1100 ° C. in the atmosphere (preliminary firing), and then subjected to hot press firing in a nitrogen atmosphere at a temperature of 1650 ° C. and a pressure of 20 MPa for 5 hours.
- High-precision polishing was performed on the created blank substrate.
- the shape was adjusted by double-sided lapping with green carbon, and then single-sided lapping was performed on the surface with diamond slurry.
- CMP polishing using colloidal silica was performed.
- the total processing amount was adjusted to 100 ⁇ m in the depth direction, and the processing amount after annealing was adjusted to 1 ⁇ m.
- the processed substrate was cleaned by immersing the substrate after processing alternately in ammonia peroxide, peroxyhydrochloric acid, sulfuric acid, hydrofluoric acid, aqua regia, and pure water.
- the number of pores and the porosity can be changed by changing the temperature and pressure during hot pressing and the annealing temperature after rough polishing. Adjusted by. Note that the alumina purity of the translucent polycrystalline alumina constituting the handle substrates of Examples 1 to 8 and Comparative Examples 1 to 4 was 99.9% or more.
- the ratio of the peeled area was calculated as follows. 1. 1. Take an image of the entire joint surface with an IR microscope. 2. Set 10 rows of grids vertically and horizontally in the captured image. Observe the peeling state for each grid and calculate using the following formula (number of grids completely peeled) ⁇ (total number of grids)
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Products (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
Abstract
Description
前記ハンドル基板が多結晶アルミナからなり、多結晶アルミナの気孔率が0.01%以上、0.1%以下であり、ハンドル基板の接合面側の表面領域に含まれる大きさ0.5μm以上の気孔数が表面領域に含まれる大きさ0.1μm以上、0.3μm以下の気孔数の0.5倍以下であることを特徴とする。
(ハンドル基板)
本発明のハンドル基板は、多結晶アルミナからなる。多結晶アルミナは、非常に緻密な焼結体が得られる為に、ハンドル基板の割れやクラックが発生しにくい。
多結晶アルミナのアルミナ純度は、アルミナ粉末を硫酸で加圧酸分解により溶解し、その溶解液をICP発光分光分析法にて分析することで決定する。
そして、観察視野における大きさ0.5μm以上の気孔の数と、大きさ0.1~0.3μmの気孔の数を数える。そして、これらの気孔数の比率を算出する。
(1) ハンドル基板の断面を鏡面研磨、サーマルエッチングして粒界を際立たせた後、顕微鏡写真(100~400倍)を撮影し、単位長さの直線が横切る粒子の数を数える。これを異なる3箇所について実施する。なお、単位長さは500μm~1000μmの範囲とする。
(2) 実施した3箇所の粒子の個数の平均をとる。
(3) 下記の式により、平均粒径を算出する。
[算出式]
D=(4/π)×(L/n)
[D:平均粒径、L:直線の単位長さ、n:3箇所の粒子の個数の平均]
平均粒径の算出例を図2に示す。異なる3箇所の位置において、それぞれ単位長さ(例えば500μm)の直線が横切る粒子の個数が22、23、19としたとき、平均粒径Dは、上記算出式により、
D=(4/π)×[500/{(22+23+19)/3}]=29.9μm
となる。
多結晶アルミナからなるブランク基板を製造する際には、純度99.9%以上(好ましくは99.95%以上)の高純度アルミナ粉末に対して、所定の焼結助剤を添加し、焼結時およびアニール処理時に焼結助剤を排出させる。このような高純度アルミナ粉末としては、大明化学工業株式会社製の高純度アルミナ粉体を例示できる。
(1) セラミック粉体とともに、結合剤となるポリビニルブチラール樹脂(PVB樹脂)、または、アクリル樹脂を、可塑剤、分散剤と共に分散媒中に分散してスラリーを調製し、ドクターブレード法にて、テープ状に成形した後、分散媒を乾燥させてスラリーを固化させる。
(2) 得られたテープを複数枚積み重ね、プレス積層またはCIP積層することで所望の厚みの基板形状の成形体を得る。更に1000~1300℃の温度で大気中で仮焼することで仮焼体を得る。
こうしたホットプレス時の焼結温度は、1300~1800℃が好ましく、1450~1650℃が更に好ましい。圧力は10~30MPaが好ましい。焼成時の雰囲気はArガス、N2ガス、真空(≦20Pa)のいずれかが好ましい。また、ホットプレス時の焼結温度での保持時間は、2~8時間とすることが好ましい。
本発明の複合基板は、プロジェクター用発光素子、高周波デバイス、高性能レーザー、パワーデバイス、ロジックICなどに利用できる。
ドナー基板の材質は、特に限定されないが、好ましくは、シリコン、窒化アルミニウム、窒化ガリウム、酸化亜鉛及びダイアモンドからなる群から選択される。ドナー基板の厚さは、特に限定されないが、通常のSEMI/JEITA規格近傍のものがハンドリングの関係から扱いやすい。
接合に用いられる技術としては、特に限定される訳ではないが、例えば表面活性化による直接接合や、接着領域を用いた基板接合技術が用いられる。
本発明の効果を確認するために、透光性アルミナ焼結体を用いたハンドル基板1を試作した。
まず、透光性アルミナ焼結体製のブランク基板を作成した。具体的には、以下の成分を混合したスラリーを調製した。
・MgO(マグネシア) 200重量部
・ZrO2(ジルコニア) 400重量部
・Y2O3(イットリア) 15重量部
(分散媒)
・グルタル酸ジメチル 27重量部
・エチレングリコール 0.3重量部
(ゲル化剤)
・MDI樹脂 4重量部
(分散剤)
・高分子界面活性剤 3重量部
(触媒)
・N,N-ジメチルアミノヘキサノール 0.1重量部
なお、実施例1~8、比較例1~4の各例のハンドル基板を構成する透光性多結晶アルミナにおけるアルミナ純度はいずれも99.9%以上であった。
実施例1~8で得られた各ハンドル基板の表面に、シリコン薄板(ドナー基板)との接着領域として、SiO2領域を形成した。成膜方法はプラズマCVDを用い、成膜後にCMP研磨(化学機械研磨)を実施することで、最終的なSiO2領域の膜厚を100nmとした。その後、プラズマ活性化法によりシリコン薄板とSiO2領域を直接接合し、Si―SiO2―ハンドル基板からなる複合基板を試作した。この結果、良好な接合状態が得られ、クラック、剥離、割れはみられなかった。また、得られた複合基板を300℃で30分間の間熱処理し、剥離面積について評価を行ったところ、表1のような結果となった。
1.接合面全体をIR顕微鏡で撮影する
2.撮影画像に縦横各10列の格子を設定する
3.各格子毎に剥がれ状態を観察し、以下の式により算出する
(完全に剥がれている格子数)÷(全体の格子数)
Claims (8)
- 半導体用複合基板のハンドル基板であって、
前記ハンドル基板が多結晶アルミナからなり、前記多結晶アルミナの気孔率が0.01%以上、0.1%以下であり、前記ハンドル基板の接合面側の表面領域に含まれる大きさ0.5μm以上の気孔数が前記表面領域に含まれる大きさ0.1μm以上、0.3μm以下の気孔数の0.5倍以下であることを特徴とする、ハンドル基板。 - 前記ハンドル基板の前記接合面の表面粗度Raが3.0nm以下であることを特徴とする、請求項1記載のハンドル基板。
- 前記多結晶アルミナの平均粒径が1~35μmであることを特徴とする、請求項1または2記載のハンドル基板。
- 前記多結晶アルミナの焼結助剤が、ZrO2を200~800ppm、MgOを150~300ppmおよびY2O3を10~30ppm含むことを特徴とする、請求項1~3のいずれか一つの請求項に記載のハンドル基板。
- 前記多結晶アルミナのアルミナ純度が99.9%以上であることを特徴とする、請求項1~4のいずれか一つの請求項に記載のハンドル基板。
- 前記多結晶アルミナが透光性多結晶アルミナであることを特徴とする、請求項1~5のいずれか一つの請求項に記載のハンドル基板。
- 請求項1~6のいずれか一つの請求項に記載のハンドル基板、および前記ハンドル基板の前記接合面に対して直接または接合領域を介して接合されているドナー基板を有することを特徴とする、半導体用複合基板。
- 前記ドナー基板が単結晶シリコンからなることを特徴とする、請求項7記載の複合基板。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201580000704.1A CN105190839B (zh) | 2014-02-26 | 2015-01-13 | 半导体用复合基板的处理基板 |
KR1020157023186A KR102263959B1 (ko) | 2014-02-26 | 2015-01-13 | 반도체용 복합 기판의 핸들 기판 |
JP2015536335A JP6076486B2 (ja) | 2014-02-26 | 2015-01-13 | 半導体用複合基板のハンドル基板 |
EP15754804.1A EP3113211B1 (en) | 2014-02-26 | 2015-01-13 | Handle substrate for composite substrate for semiconductor and composite substrate for semiconductor |
US14/923,661 US20160046528A1 (en) | 2014-02-26 | 2015-10-27 | Handle Substrates for Composite Substrates for Semiconductors |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014035594 | 2014-02-26 | ||
JP2014-035594 | 2014-02-26 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/923,661 Continuation US20160046528A1 (en) | 2014-02-26 | 2015-10-27 | Handle Substrates for Composite Substrates for Semiconductors |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015129302A1 true WO2015129302A1 (ja) | 2015-09-03 |
Family
ID=54008632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/050577 WO2015129302A1 (ja) | 2014-02-26 | 2015-01-13 | 半導体用複合基板のハンドル基板 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20160046528A1 (ja) |
EP (1) | EP3113211B1 (ja) |
JP (1) | JP6076486B2 (ja) |
KR (1) | KR102263959B1 (ja) |
CN (1) | CN105190839B (ja) |
WO (1) | WO2015129302A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020148909A1 (ja) * | 2019-01-18 | 2020-07-23 | 住友電気工業株式会社 | 接合体及び表面弾性波デバイス |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5697813B1 (ja) | 2013-07-18 | 2015-04-08 | 日本碍子株式会社 | 半導体用複合基板のハンドル基板 |
JP5781254B1 (ja) * | 2013-12-25 | 2015-09-16 | 日本碍子株式会社 | ハンドル基板、半導体用複合基板、半導体回路基板およびその製造方法 |
DE102016203058B3 (de) * | 2016-02-26 | 2017-05-18 | Heraeus Deutschland GmbH & Co. KG | Kupfer-Keramik-Verbund und Modul |
US11584696B2 (en) | 2016-02-26 | 2023-02-21 | Heraeus Deutschland GmbH & Co. KG | Copper-ceramic composite |
EP3210951B9 (de) * | 2016-02-26 | 2021-05-19 | Heraeus Deutschland GmbH & Co. KG | Kupfer-keramik-verbund |
US10580666B2 (en) | 2016-07-01 | 2020-03-03 | Corning Incorporated | Carrier substrates for semiconductor processing |
CN107633997B (zh) * | 2017-08-10 | 2019-01-29 | 长江存储科技有限责任公司 | 一种晶圆键合方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008533270A (ja) * | 2005-03-14 | 2008-08-21 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 多結晶セラミック構造の蛍光体、及び前記蛍光体を有する発光素子 |
JP2008195581A (ja) * | 2007-02-14 | 2008-08-28 | Tosoh Corp | 透光性アルミナ焼結体及びその製造方法 |
WO2014013980A1 (ja) * | 2012-07-18 | 2014-01-23 | 日本碍子株式会社 | 複合ウェハー及びその製法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3323945B2 (ja) | 1991-12-03 | 2002-09-09 | 東芝セラミックス株式会社 | ダミーウェーハ |
US5572040A (en) | 1993-07-12 | 1996-11-05 | Peregrine Semiconductor Corporation | High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
JP3943197B2 (ja) | 1997-07-08 | 2007-07-11 | 太平洋セメント株式会社 | ダミーウェハ |
JP3934388B2 (ja) * | 2001-10-18 | 2007-06-20 | 株式会社ルネサステクノロジ | 半導体装置の製造方法及び製造装置 |
FR2834123B1 (fr) | 2001-12-21 | 2005-02-04 | Soitec Silicon On Insulator | Procede de report de couches minces semi-conductrices et procede d'obtention d'une plaquette donneuse pour un tel procede de report |
CN100566490C (zh) * | 2005-03-14 | 2009-12-02 | 皇家飞利浦电子股份有限公司 | 多晶陶瓷结构中的磷光体和包括该磷光体的发光元件 |
CN101415864B (zh) * | 2005-11-28 | 2014-01-08 | 晶体公司 | 具有减少缺陷的大的氮化铝晶体及其制造方法 |
US20080018774A1 (en) * | 2006-07-21 | 2008-01-24 | Matsushita Electric Industrial Co., Ltd. | Image capture device |
JP5420968B2 (ja) | 2009-05-07 | 2014-02-19 | 信越化学工業株式会社 | 貼り合わせウェーハの製造方法 |
JP2010278341A (ja) | 2009-05-29 | 2010-12-09 | Shin-Etsu Chemical Co Ltd | 貼り合わせsos基板 |
JP2012104666A (ja) * | 2010-11-10 | 2012-05-31 | Sumco Corp | 貼り合わせウェーハ及びその製造方法 |
JP5761636B2 (ja) * | 2011-02-18 | 2015-08-12 | 国立研究開発法人産業技術総合研究所 | アルミナ接合体及びアルミナ焼結体の接合方法 |
JP2014021136A (ja) * | 2012-07-12 | 2014-02-03 | Yahoo Japan Corp | 音声合成システム |
JP5697813B1 (ja) * | 2013-07-18 | 2015-04-08 | 日本碍子株式会社 | 半導体用複合基板のハンドル基板 |
JP5781254B1 (ja) * | 2013-12-25 | 2015-09-16 | 日本碍子株式会社 | ハンドル基板、半導体用複合基板、半導体回路基板およびその製造方法 |
-
2015
- 2015-01-13 JP JP2015536335A patent/JP6076486B2/ja not_active Expired - Fee Related
- 2015-01-13 KR KR1020157023186A patent/KR102263959B1/ko active IP Right Grant
- 2015-01-13 CN CN201580000704.1A patent/CN105190839B/zh not_active Expired - Fee Related
- 2015-01-13 EP EP15754804.1A patent/EP3113211B1/en active Active
- 2015-01-13 WO PCT/JP2015/050577 patent/WO2015129302A1/ja active Application Filing
- 2015-10-27 US US14/923,661 patent/US20160046528A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008533270A (ja) * | 2005-03-14 | 2008-08-21 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 多結晶セラミック構造の蛍光体、及び前記蛍光体を有する発光素子 |
JP2008195581A (ja) * | 2007-02-14 | 2008-08-28 | Tosoh Corp | 透光性アルミナ焼結体及びその製造方法 |
WO2014013980A1 (ja) * | 2012-07-18 | 2014-01-23 | 日本碍子株式会社 | 複合ウェハー及びその製法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP3113211A4 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020148909A1 (ja) * | 2019-01-18 | 2020-07-23 | 住友電気工業株式会社 | 接合体及び表面弾性波デバイス |
JPWO2020148909A1 (ja) * | 2019-01-18 | 2021-12-23 | 住友電気工業株式会社 | 接合体及び表面弾性波デバイス |
JP7414012B2 (ja) | 2019-01-18 | 2024-01-16 | 住友電気工業株式会社 | 接合体及び表面弾性波デバイス |
Also Published As
Publication number | Publication date |
---|---|
US20160046528A1 (en) | 2016-02-18 |
EP3113211B1 (en) | 2020-12-02 |
KR20160125282A (ko) | 2016-10-31 |
CN105190839A (zh) | 2015-12-23 |
EP3113211A1 (en) | 2017-01-04 |
JPWO2015129302A1 (ja) | 2017-03-30 |
EP3113211A4 (en) | 2017-10-11 |
CN105190839B (zh) | 2019-12-06 |
KR102263959B1 (ko) | 2021-06-11 |
JP6076486B2 (ja) | 2017-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6076486B2 (ja) | 半導体用複合基板のハンドル基板 | |
JP6182661B2 (ja) | 半導体用複合基板のハンドル基板および半導体用複合基板 | |
WO2014174946A1 (ja) | 半導体用複合基板のハンドル基板 | |
JP5697813B1 (ja) | 半導体用複合基板のハンドル基板 | |
JP5755390B1 (ja) | ハンドル基板および半導体用複合ウエハー | |
WO2014157734A1 (ja) | 半導体用複合基板のハンドル基板 | |
JP5651278B1 (ja) | 半導体用複合基板のハンドル基板 | |
JP5849176B1 (ja) | 半導体用複合基板のハンドル基板および半導体用複合基板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201580000704.1 Country of ref document: CN |
|
ENP | Entry into the national phase |
Ref document number: 2015536335 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20157023186 Country of ref document: KR Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15754804 Country of ref document: EP Kind code of ref document: A1 |
|
REEP | Request for entry into the european phase |
Ref document number: 2015754804 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2015754804 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |