WO2015128064A1 - Verfahren zur herstellung eines bauteils - Google Patents
Verfahren zur herstellung eines bauteils Download PDFInfo
- Publication number
- WO2015128064A1 WO2015128064A1 PCT/EP2015/000305 EP2015000305W WO2015128064A1 WO 2015128064 A1 WO2015128064 A1 WO 2015128064A1 EP 2015000305 W EP2015000305 W EP 2015000305W WO 2015128064 A1 WO2015128064 A1 WO 2015128064A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- layer composite
- composite
- component
- producing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000002131 composite material Substances 0.000 claims abstract description 236
- 238000000034 method Methods 0.000 claims abstract description 64
- 239000011810 insulating material Substances 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims description 29
- 238000005304 joining Methods 0.000 claims description 21
- 238000000926 separation method Methods 0.000 claims description 14
- 238000000059 patterning Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000012777 electrically insulating material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 229940125810 compound 20 Drugs 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- JAXFJECJQZDFJS-XHEPKHHKSA-N gtpl8555 Chemical compound OC(=O)C[C@H](N)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](C(C)C)C(=O)N1CCC[C@@H]1C(=O)N[C@H](B1O[C@@]2(C)[C@H]3C[C@H](C3(C)C)C[C@H]2O1)CCC1=CC=C(F)C=C1 JAXFJECJQZDFJS-XHEPKHHKSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0006—Interconnects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00333—Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
Definitions
- the invention relates to a method for producing a component, in particular a micromechanical, micro-electro-mechanical (MEMS) or micro-opto-electro-mechanical (MOEMS) component.
- MEMS micro-electro-mechanical
- MOEMS micro-opto-electro-mechanical
- Micro-electromechanical components or micro-opto-electro-mechanical components (MOEMS) often comprise active structures.
- active structure is to be understood as meaning, in particular, moving structures or structures which likewise have movable and optical components (eg movable mirrors) .
- active area denotes the area or volume of the component in which the active structure lies or is located . moves. It may be necessary or advantageous if the active structure does not consist of a uniform composite, but at least two separate parts or areas, which are indeed mechanically rigidly connected to each other, but completely electrically isolated from each other.
- a method of manufacturing a device comprises creating a first layer composite comprising a structural layer that is electrically conductive in at least a first region and a trench filled with an insulating material that extends from a first surface of the structural layer and in the first region of the structural layer is arranged comprises.
- the first surface of the structure layer faces a first surface of the first layer composite.
- the method for producing a component comprises producing a second layer composite having a first recess in a first surface of the second layer composite, and bonding the first laminate to the second laminate, wherein the first surface of the first laminate at least in areas is adjacent to the first surface of the second layer composite and wherein the filled trench is disposed within the lateral position of the first recess.
- the method comprises generating an active structure of the component in the structural layer, wherein the active structure is arranged within the lateral position of the first recess and comprises two second regions of the structural layer.
- the second regions of the structure layer are arranged in the first region of the structure layer, physically rigidly connected to one another and electrically insulated from one another by the filled trench
- the filled trench in the first layer composite may extend to a depth which is smaller than the thickness of the first layer composite before the first composite layer is bonded to the second composite layer. That is, the filled trench does not extend to a second surface of the first layer composite, which is opposite to the first surface of the first composite layer.
- the first layer composite further comprises an auxiliary layer which adjoins a second surface of the structure layer, wherein the second surface of the structure layer is opposite to the first surface of the structure layer.
- the filled trench extends to the second surface of the structural layer.
- no further structures are formed in the first layer composite prior to joining the first layer composite to the second layer composite next to the trench filled with insulating material.
- no separation trenches that is not filled with a material trenches formed.
- the structural layer is patterned to produce the active structure of the component.
- separating trenches which are not filled with a material and extend from the first surface of the first layer composite to a depth, which forms the first trench composite are formed in the first layer composite prior to joining the first layer composite to the second layer composite next to the filled trench is equal to or greater than a depth of the filled trench.
- the separation trenches define the lateral boundary of the active structure produced in a later method step.
- the active structure of the component can be created by reducing the thickness of the first composite layer to the depth of the filled trench.
- the method for producing a component further comprises producing a third layer composite having a first surface and connecting the first layer composite to the third layer composite after the active structure has been produced, wherein the first surface of the third layer composite is at least in regions adjacent to the second surface of the first layer composite.
- the structural layer can be hermetically sealed.
- a second recess can be produced in the first surface of the third layer composite. Belm connecting the first layer composite with the third layer composite, the active structure is disposed within the lateral position of the second recess.
- the layer of the first layer composite facing the third layer composite and the layer of the third layer composite facing the first layer composite consist of the same material.
- the layer of the first layer composite facing the second layer composite and the layer of the second layer composite facing the first layer composite consist of the same material.
- the layers to be joined together that is, the layer of the first layer composite facing the second layer composite and the second layer composite facing the first layer composite and optionally the layer of the first laminate group facing the third laminate layer and the layer facing the first laminate layer of the third layer composite, consist of the same material
- suitable methods for joining these layers, for example bonding processes can be used.
- the corresponding layers may consist of a semiconductor material, in particular silicon.
- FIG. 1 shows a first layer composite according to an embodiment of the method in a cross section.
- FIG. 2 shows a first layer composite according to another embodiment of the method in a cross section.
- FIG. 3 shows a second layer composite according to an embodiment of the method in a cross section.
- FIG. 4 shows a component according to an embodiment of the method after joining the first and the two layer composites in a cross section.
- FIG. 5 shows the component from FIG. 4 after reducing the thickness of the first layer composite in a cross section.
- FIG. 6 shows the component from FIG. 5 after the structuring of the structural layer according to an embodiment of the method in a cross section.
- FIG. 7 shows a third layer composite according to an embodiment of the method in a cross section.
- FIG. 8 shows the component from FIG. 6 after connecting the component to the third layer composite from FIG. 7 in a cross section.
- FIG. 9 shows the component from FIG. 8 after further process steps according to an embodiment of the method in a cross section.
- FIG. 10 shows a first layer composite according to a further embodiment of the method in a cross section.
- FIG. 11 shows a component according to one embodiment of the method after joining the first layer composite from FIG. 10 and the two layer composite in a cross section.
- FIG. 12 shows the component from FIG. 11 after reducing the thickness of the first layer composite in a cross section.
- FIG. 1 shows a cross section through a generated first layer composite 10 according to a first embodiment.
- the first layer composite 10 shown in FIG. 1 comprises a structural layer 11 and a trench 15 filled with an insulating material.
- FIG. 1 shows two filled trenches 15, but a filled trench is already sufficient for the method according to the invention.
- the first layer composite 10 has a first surface 110 and a second surface 112 opposite the first surface 110 of the first layer composite 10.
- the structure layer 1 1 has a first surface 1 1 1 and a second surface 1 13, which is opposite to the first surface 1 1 1.
- the first layer composite comprises only the structure layer 11, so that the first surface 11 1 corresponds to the structure layer 1 1 of the first surface 110 of the first layer composite 10 and the second surface 1 13 to the structure layer 11 the second surface 1 12 of the first laminate 10 corresponds.
- the structure layer 1 1 has at least one first region 1 14, which is electrically conductive and in which the filled trench 15 is formed.
- a plurality of filled trenches 15 may be formed in one and the same first region 14, as shown in FIG.
- various filled trenches 15 may also be formed in different first regions 14 which are electrically isolated from each other.
- the one or more first regions 1 14 may extend from the first surface 1 1 1 of the structural layer 11 and may extend to a depth di 5 of the filled trenches 15, as shown in FIG.
- the one or more first regions 1 14 may also extend to another depth that is different from the depth d 15 of the filled trenches 15, or may be formed as buried regions that do not correspond to any of them first or second surface III or 1 13 of the structural layer 1 1 adjacent.
- the one or more first regions 1 14 may, for example, be doped regions in a semiconductor layer or a semiconductor substrate, for example of silicon. It is also possible that the entire structure layer 1 1 is electrically conductive and the first region 14 thus extends over the entire
- structural layer here describes structures which consist only of a material, for example a silicon wafer, but which may also include a composite of several layers and materials, as long as the first region 1 14 of the structural layer 1 1 is electrically conductive.
- an active structure of a component is generated in the first region 14, wherein the filled trench electrically isolates individual regions of the active structure from one another. It is also possible to generate several active structures.
- the number of filled trenches results from the number of later-to-be-generated regions of one or more active structures in the structural layer, the regions being physically rigidly interconnected but electrically isolated from each other. That is, the number of filled trenches 15, the first regions 14, the regions of an active structure and the active structures isolated from each other is not limited.
- the filled trenches 15 are filled with insulating material and extend from the first surface 11 of the first substrate 11 to the depth d 15 .
- the depth d 15 of the filled trenches 15 is smaller than a thickness dio of the first layer composite 10.
- the filled trenches 15 do not extend to the second surface 12 of the first layer composite 10.
- the filled trenches 15 can be arranged as desired be and have any shapes. For example, they may be straight or curved in plan view and, if a plurality of filled trenches 15 are formed, they may be parallel or at an angle to each other.
- the filled trenches 15 may extend in cross section as desired from the first surface 1 1 1 from.
- the filled trenches 15 may be perpendicular to the first surface 1 1 1 or at a defined angle to this surface, straight or curved.
- the width of the filled trenches 15 can vary over their depth.
- various filled trenches 15 may be formed differently, with the depth of all filled trenches 15 being preferably the same.
- the filled trenches 15 can be produced by means of an etching process, for example a dry etching process (DRIE) or a strongly anisotropic wet etching process, with the aid of a mask or by means of other processes and a subsequent filling process of the resulting trenches with an insulating material.
- the trenches are generated from the first surface 11 of the structural layer 11.
- the insulating material with which the trenches are filled can be filled into the trenches, for example by means of a chemical or physical deposition method (CVD or PVD). Subsequent to the filling of the trenches with the insulating material, excess insulating material, which is located on the first surface 11 1, is removed again. This can be performed using a chemical mechanical Polierverfah ⁇ proceedings (CMP) or an etching process.
- CMP chemical mechanical Polierverfah ⁇ proceedings
- FIG. 1 shows the result of this process step.
- further structures can be produced in the first layer composite 10.
- further trenches which extend from the first surface 110 of the first layer composite 10 or from the first surface 11 of the structural layer 11, but are not filled with a material, or further electrically conductive regions in the structural layer 11, However, in which no filled with insulating material trenches 15 are arranged to be formed. This will be explained later with reference to FIGS. 10 to 12.
- FIG. 2 shows another embodiment of the first layer composite 10 as a result of the first process step of the method according to the invention.
- the layer composite 10 comprises, in addition to the structural layer 11 and the filled trench 15, an auxiliary layer 13 which adjoins the second surface 13 of the structural layer 11.
- the first surface 1 1 1 of the structure layer 1 1 corresponds to the first surface 110 of the first layer composite 10, while the second surface 1 13 of the structure layer 1 1 faces the second surface 1 12 of the first laminate 10; this does not correspond.
- the auxiliary layer 13 can consist of an insulating material, for example silicon oxide, or of any other material as long as it adheres well to the structural layer 11 and can be removed again in a later process step.
- the auxiliary layer 13 may also consist of several layers.
- the filled trench (s) 15 may extend to any depth in the first layer composite 10. Preferably extend they are up to the second surface 1 13 of the structural layer 1 1, as shown in Figure 2. However, they may also extend to a depth which is smaller or larger than a thickness of the structural layer 11. With respect to the first region 1 14 of the structural layer 1 1 as well as the position and shape of the filled trenches 15 and the generation thereof, the above applies.
- the first layer composite 10 shown in FIGS. 1 or 2 can also comprise one or more further layers, which can be arranged as desired.
- an additional layer may be arranged on the first surface 11 1 of the structure layer 11 and adjoin the first surface 110 of the first layer composite 10.
- the additional layer can consist of an insulating material and be applied after the production of the filled trenches 15, so that the filled trenches 15 extend from the first surface 11 of the structural layer 11.
- the additional layer may also have been applied prior to the creation of the filled trenches 15, so that the filled trenches 15 extend from the first surface 110 of the first layer composite 10.
- the second layer composite 20 may comprise a first substrate 21, for example of an electrically conductive material, and a first layer 22, for example of an insulating material. Also possible are other combinations of materials, for example, the first substrate 21 may consist of an electrically insulating material and the first layer 22 of an electrically conductive material.
- the term "substrate" describes structures which consist only of one material, for example a silicon wafer or a glass pane, but which may also comprise a composite of several layers and materials, However, the second layer composite 20 may also consist only of a first substrate 21 ,
- the second layer composite 20 has a first recess 210, which is formed in a first surface 21 1 of the second layer composite 20.
- the first recess 210 has a depth which is smaller than a thickness of the second layer composite 20.
- the second layer composite 20 may also contain a plurality of first ments 210 and further recesses, wherein the further recesses may have the same depth as the first recess 210 or a different depth.
- the step for producing the second layer composite 20 is independent of the time of the step for producing the first layer composite 10 and may take place before or after this.
- the first layer composite 10 is joined to the second layer composite 20 and a component 1 is produced.
- the first layer composite 10 shown in FIG. 1 and the second layer composite 20 shown in FIG. 3 were selected.
- the first layer composite 10 and the second layer composite 20 may be formed arbitrarily as described above.
- the first surface 1 10 of the first layer composite 10 adjoins the first surface 21 1 of the second layer composite 20 at least in regions, wherein the filled trenches 15 are arranged within the lateral position of the first recess 210 in the second layer composite 20. This ensures that an active structure that is produced in the structure layer 11 in a later process step and encompasses at least one filled trench 15 can move freely with respect to the second layer composite 20 and not to the first surface 21 1 of the second Layer composite 20 abuts.
- joining processes based on direct bonding processes and anodic bonding processes can be used.
- MEMS or MOEMS components can be produced cost-effectively.
- such a joining method enables a stable and hermetically sealed connection of the first and the second layer composite 10 and 20 with one another.
- the filled trenches 15 preferably do not extend to the second surface 12 of the first layer composite 10, particularly suitable parameters can be used during the process for joining the first and the second layer composite 10 and 20, for example high contact pressures and / or air underpressures during a bonding process.
- the first layer composite 10 has an increased stability in the connection process, which allows the use of particularly suitable process parameters. It is particularly advantageous for a bonding process when the layers of the first laminate 10 and the second laminate 20 to be joined together are made of the same material. That is, the layer of the first layer composite 10 facing the second layer composite 20 and the layer of the second layer composite 20 facing the first layer composite 10 can be made of the same material, for example of silicon.
- the first layer composite 10 is thinned from the second surface 12 to the depth di5 of the filled trenches 15, that is, the thickness of the first layer composite 10 is reduced to a thickness, which corresponds to the depth dis of the filled trenches 15, reduced.
- This can be done, for example, using a CMP process or an etching process.
- the material of the first layer composite 10 is removed until the filled trenches 15 are reached.
- the filled trenches 15 adjoin the second surface 1 12 of the first layer composite 10 and thus electrically insulate specific second regions 1 15 of the structure layer 1 1 at least partially electrically from other regions of the structure layer 1 1 within the first region 1 14 of the structure layer 1 1 "At least partially" here means that the second regions 15 may possibly still be electrically conductively connected to one another in another cross-sectional plane in which the filled trenches 15 are not formed, which may be the case in particular 6 shows the result of a process step for producing further structures in the first layer composite 10.
- separation trenches 16 in the first layer composite 10, for example comprising only the structure layer 11, are produced can, by an etching pro formed, wherein the separation trenches 16 are not filled with a material and thus physically separate individual areas or structures in the first layer composite 10 from each other.
- one or more active structures 17 and other structures 18, which may also be movable are generated.
- FIG. 6 two active structures 17 and six other structures 18 are shown, however, the number of active structures 17 and the other structures 18 is not limited and the other structures 18 may for example also not be formed.
- the two illustrated active structures 17 each comprise two second regions 15 of the structure layer 11, the second regions 11 being at least partially arranged in the first region 11 of the structure layer 11.
- the second regions 1 15 are preferably completely electrically conductive, that is, they are completely arranged in the first region 14 of the structure layer 11.
- the isolation trenches 16 are arranged to laterally delimit the active structures 17 and, in conjunction with the filled trench 15, electrically isolate the second regions 15 of one of the active structures 17, but the second regions 15 of the specific active structure 17 are physically rigidly connected. In this way, different potentials can be applied to different second regions 15 of the active structure 17, for example via electrically conductive springs which connect the second regions 15 of the active structure 17 to corresponding electrodes and allow movement of the active structure 17.
- the active structure 17 is arranged within the lateral position of the first recess 210 in the second layer composite 20.
- a third layer composite 30 can be produced.
- the third layer composite 30 may comprise a second substrate 31, for example of an electrically conductive material, and a second layer 32, for example of an insulating material.
- the second substrate 31 may consist of an electrically insulating material and the second layer 32 of an electrically conductive material.
- substrate describes structures which consist only of one material, for example a silicon wafer or a glass pane, but which may also comprise a composite of several layers and materials,
- the third layer composite 30 can also consist only of a second substrate 31 ,
- the third layer composite 30 preferably has at least one second recess 310, which is formed in a first surface 31 1 of the third layer composite 30.
- the second recess 310 has a depth that is smaller than a thickness of the third layer composite 30.
- the third layer composite 30 can also, a plurality of second recesses 310 and further recesses, wherein the further recesses may have the same depth as the second recess 3 10 or a different depth.
- the step for producing the third layer composite 30 is independent of time of the previously described process steps and can take place before or after individual or all of the process steps described so far.
- the first layer composite 10 and the second layer composite 20 may be formed arbitrarily as described above.
- the second surface 1 12 of the first layer composite 10 adjoins the first surface 31 1 of the third layer composite 30 at least in regions, wherein the active structure 17 is arranged within the lateral position of the second recess 310 in the third layer composite 30. This ensures that the active structure 17 can move freely with respect to the third layer composite 30 and does not abut against the first surface 31 1 of the third layer composite 30.
- joining processes based on direct bonding processes as well as anodic bonding processes can be used. This allows a hermetically sealed connection of the first and the third layer composite 10 and 30 with each other. As a result, the active structure 17 is hermetically sealed.
- the layers of the first layer composite 10 and of the third layer composite 30 to be bonded together consist of the same material. That is, the layer of the first layer composite 10 facing the third layer composite 30 and the layer of the third layer composite 30 facing the first layer composite 10 can be made of the same material, for example silicon.
- first cover layer 40 on the second layer composite 20 and a second cover layer 41 on the third layer composite 30 to be brought may be made of the same material, for example a metal, or of different materials. They can serve to shield an active area of the component 1 from external electric fields or other environmental influences, such as moisture.
- contact surfaces 42 for the electrical Kbntakttechnik of the first layer composite 10, in particular the structural layer 1 1, and electrical contacts 43 are generated.
- a metal layer on the first surface 110 of the first layer composite 10 can be produced as a contact surface 42 in a third recess 220 in the second layer compound 20 and can be electrically contacted by means of a wire 43.
- other methods for producing an electrical contact to the first layer composite 10 are possible.
- the first layer composite 10 has a plurality of isolation trenches 16 which are not filled with a material.
- the separation trenches 16 extend from the first surface 110 of the first composite layer 10 to a depth that is preferably equal to or greater than the depth di5 of the filled trenches 15, but less than the thickness di 0 of the first composite layer.
- the isolation trenches 16 are arranged so that they limit one or more regions of the structure layer 1 1, wherein each region of an active. Structure of the component corresponds.
- the first layer composite 10 may also have an auxiliary layer 13, wherein the separation trenches 16 preferably extend as far as the second surface 1 13 of the structure layer 11.
- the separating trenches 16 may also extend from the first surface 1 1 1 of the structural layer 1 1. That is, if there is an additional layer on the surface 1 1 1 of the structural layer 1 1, the separation trenches 16 do not necessarily extend from the first surface 1 10 of the first composite layer 10 from.
- FIG. 11 shows a component 1 after connecting the first layer composite 10 shown in FIG. 10 to the second layer composite 20 shown in FIG. 3. Since the separation trenches 16 preferably do not extend to the second surface 12 of the first laminate 10 and thus the Stability of the In order to bond the first layer composite 10 to the second layer composite 20, particularly suitable methods and process parameters, as described with reference to FIG. 4, can likewise be used.
- the first layer composite 10 is thinned out from the second surface 1 12 of the first layer composite 10.
- the first layer composite 10 preferably offer chemical mechanical polishing (CMP) and etching.
- CMP chemical mechanical polishing
- the thickness of the first layer composite 10 is reduced to a thickness that corresponds to the depth dis of the filled trenches 15, so that the filled trenches 15 adjoin the second surface 12 of the first layer composite 10.
- the separation trenches 16 are simultaneously opened on the second surface 1 12 of the first layer composite 10, whereby the active structures 17 and the other structures 18 can be produced. The result of this process step is shown in FIG. 12,
- the separation trenches 16 must subsequently be opened up to the first surface 110 of the first layer composite 10, thus providing a movable active structure 17 is generated. This can be done by an etching process in which the above-described additional layer which covers the separation trenches 16 on the first surface 110 of the first composite layer 10 is removed, at least in the regions of the isolation trenches 16.
- first layer composite 10 of the second layer composite 20 and of the third layer composite 30 are possible, as well as various combinations of these embodiments.
- interconnects that electrically conductively connect individual electrically conductive, but physically separate, regions of the first composite layer 10, or electrodes that have a specific potential and in which For example, can serve as detectors orclosbegrenzer be trained.
- the method according to the invention for producing the component 1 makes it possible to produce an active structure of the component with two separate parts or regions which, although mechanically rigidly connected to one another, are completely electrically insulated from one another.
- suitable joining parameters can be selected during a joining process for joining the first layer composite 10 to the second layer composite 20, since the first layer composite 10 has a thickness greater than the depth of the filled trenches 15 during joining to the second layer composite 20 and thus has a high stability.
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Abstract
Description
Claims
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201580006667.5A CN105960375B (zh) | 2014-02-25 | 2015-02-11 | 用于制造构件的方法 |
BR112016016629-9A BR112016016629B1 (pt) | 2014-02-25 | 2015-02-11 | Método para a produção de um componente |
CA2937361A CA2937361C (en) | 2014-02-25 | 2015-02-11 | Method for producing a component |
JP2016553813A JP6263274B2 (ja) | 2014-02-25 | 2015-02-11 | コンポーネントの製造方法 |
EP15704213.6A EP3110745B1 (de) | 2014-02-25 | 2015-02-11 | Verfahren zur herstellung eines bauteils |
KR1020167023056A KR101901504B1 (ko) | 2014-02-25 | 2015-02-11 | 부품을 제조하는 방법 |
US15/121,638 US9783410B2 (en) | 2014-02-25 | 2015-02-11 | Method for producing a component |
AU2015222513A AU2015222513B2 (en) | 2014-02-25 | 2015-02-11 | Method for producing a component |
RU2016127885A RU2652533C9 (ru) | 2014-02-25 | 2015-02-11 | Способ изготовления компонента |
SG11201607079XA SG11201607079XA (en) | 2014-02-25 | 2015-02-11 | Method for producing a component |
IL246715A IL246715A (en) | 2014-02-25 | 2016-07-11 | Method for component production |
ZA2016/04816A ZA201604816B (en) | 2014-02-25 | 2016-07-13 | Method for producing a component |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014002824.0 | 2014-02-25 | ||
DE102014002824.0A DE102014002824A1 (de) | 2014-02-25 | 2014-02-25 | Verfahren zur Herstellung eines Bauteils |
Publications (1)
Publication Number | Publication Date |
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WO2015128064A1 true WO2015128064A1 (de) | 2015-09-03 |
Family
ID=52469794
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/EP2015/000305 WO2015128064A1 (de) | 2014-02-25 | 2015-02-11 | Verfahren zur herstellung eines bauteils |
Country Status (15)
Country | Link |
---|---|
US (1) | US9783410B2 (de) |
EP (1) | EP3110745B1 (de) |
JP (1) | JP6263274B2 (de) |
KR (1) | KR101901504B1 (de) |
CN (1) | CN105960375B (de) |
AU (1) | AU2015222513B2 (de) |
BR (1) | BR112016016629B1 (de) |
CA (1) | CA2937361C (de) |
DE (1) | DE102014002824A1 (de) |
IL (1) | IL246715A (de) |
RU (1) | RU2652533C9 (de) |
SG (1) | SG11201607079XA (de) |
TR (1) | TR201803020T4 (de) |
WO (1) | WO2015128064A1 (de) |
ZA (1) | ZA201604816B (de) |
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- 2015-02-11 WO PCT/EP2015/000305 patent/WO2015128064A1/de active Application Filing
- 2015-02-11 CN CN201580006667.5A patent/CN105960375B/zh active Active
- 2015-02-11 CA CA2937361A patent/CA2937361C/en active Active
- 2015-02-11 TR TR2018/03020T patent/TR201803020T4/tr unknown
- 2015-02-11 US US15/121,638 patent/US9783410B2/en not_active Expired - Fee Related
- 2015-02-11 KR KR1020167023056A patent/KR101901504B1/ko active IP Right Grant
- 2015-02-11 BR BR112016016629-9A patent/BR112016016629B1/pt active IP Right Grant
- 2015-02-11 JP JP2016553813A patent/JP6263274B2/ja active Active
- 2015-02-11 RU RU2016127885A patent/RU2652533C9/ru active
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- 2015-02-11 AU AU2015222513A patent/AU2015222513B2/en active Active
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2016
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Also Published As
Publication number | Publication date |
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CA2937361C (en) | 2018-10-09 |
EP3110745A1 (de) | 2017-01-04 |
CN105960375B (zh) | 2018-12-25 |
JP6263274B2 (ja) | 2018-01-17 |
BR112016016629B1 (pt) | 2021-11-30 |
RU2652533C2 (ru) | 2018-04-26 |
KR101901504B1 (ko) | 2018-09-21 |
CA2937361A1 (en) | 2015-09-03 |
AU2015222513B2 (en) | 2017-06-22 |
US20160368761A1 (en) | 2016-12-22 |
DE102014002824A1 (de) | 2015-08-27 |
JP2017507792A (ja) | 2017-03-23 |
US9783410B2 (en) | 2017-10-10 |
IL246715A (en) | 2017-01-31 |
AU2015222513A1 (en) | 2016-08-11 |
ZA201604816B (en) | 2017-11-29 |
CN105960375A (zh) | 2016-09-21 |
EP3110745B1 (de) | 2017-12-20 |
TR201803020T4 (tr) | 2018-03-21 |
SG11201607079XA (en) | 2016-10-28 |
BR112016016629A2 (pt) | 2017-08-08 |
KR20160111504A (ko) | 2016-09-26 |
RU2016127885A (ru) | 2018-03-29 |
RU2652533C9 (ru) | 2018-09-11 |
RU2016127885A3 (de) | 2018-03-29 |
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