WO2015118402A1 - Método para la fabricación de una película delgada formada por un cristal coloidal infiltrado con el polímero luminiscente mdmo-ppv formado a partir de esferas de sílice (sio2), con estructura cúbica centrada en las caras (fcc) - Google Patents
Método para la fabricación de una película delgada formada por un cristal coloidal infiltrado con el polímero luminiscente mdmo-ppv formado a partir de esferas de sílice (sio2), con estructura cúbica centrada en las caras (fcc) Download PDFInfo
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- WO2015118402A1 WO2015118402A1 PCT/IB2015/000120 IB2015000120W WO2015118402A1 WO 2015118402 A1 WO2015118402 A1 WO 2015118402A1 IB 2015000120 W IB2015000120 W IB 2015000120W WO 2015118402 A1 WO2015118402 A1 WO 2015118402A1
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- Prior art keywords
- mdmo
- spheres
- ppv
- luminescent polymer
- manufacturing
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- 229920000264 poly(3',7'-dimethyloctyloxy phenylene vinylene) Polymers 0.000 title claims abstract description 57
- 229920000642 polymer Polymers 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 49
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000010409 thin film Substances 0.000 title claims abstract description 15
- 239000013078 crystal Substances 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000010408 film Substances 0.000 claims abstract description 20
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 13
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 13
- 238000004528 spin coating Methods 0.000 claims abstract description 13
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 13
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 239000003960 organic solvent Substances 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 claims abstract description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 56
- 239000000725 suspension Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 11
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexyloxide Natural products O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 9
- 239000012044 organic layer Substances 0.000 claims description 9
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 claims description 4
- 238000002834 transmittance Methods 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 238000005119 centrifugation Methods 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000003760 magnetic stirring Methods 0.000 claims description 2
- 230000002194 synthesizing effect Effects 0.000 claims description 2
- 239000007966 viscous suspension Substances 0.000 claims description 2
- 125000002243 cyclohexanonyl group Chemical group *C1(*)C(=O)C(*)(*)C(*)(*)C(*)(*)C1(*)* 0.000 claims 1
- 239000007769 metal material Substances 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 238000003786 synthesis reaction Methods 0.000 abstract description 4
- 229910003437 indium oxide Inorganic materials 0.000 abstract description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 26
- 230000005855 radiation Effects 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 238000002347 injection Methods 0.000 description 15
- 239000007924 injection Substances 0.000 description 15
- 238000010521 absorption reaction Methods 0.000 description 12
- 238000000605 extraction Methods 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- 239000002242 colloidal glass Substances 0.000 description 8
- 239000004038 photonic crystal Substances 0.000 description 8
- 238000002835 absorbance Methods 0.000 description 7
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000012856 packing Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 238000010348 incorporation Methods 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 5
- 238000004776 molecular orbital Methods 0.000 description 5
- 238000000411 transmission spectrum Methods 0.000 description 5
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N EtOH Substances CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000011858 nanopowder Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000103 photoluminescence spectrum Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 125000001140 1,4-phenylene group Chemical group [H]C1=C([H])C([*:2])=C([H])C([H])=C1[*:1] 0.000 description 1
- -1 Poly [2-methoxy-5- (2-ethyl-hexyloxy) -1, 4-phenylene-vinyl-1, 2-ethenylene-2,5 dimethoxy-1, 4-phenylene-1, 2-ethylene ] Polymers 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- IDLFZVILOHSSID-OVLDLUHVSA-N corticotropin Chemical compound C([C@@H](C(=O)N[C@@H](CO)C(=O)N[C@@H](CCSC)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC=1NC=NC=1)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CC=1C2=CC=CC=C2NC=1)C(=O)NCC(=O)N[C@@H](CCCCN)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](C(C)C)C(=O)NCC(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](CC=1C=CC(O)=CC=1)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CC(N)=O)C(=O)NCC(=O)N[C@@H](C)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC(O)=O)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CO)C(=O)N[C@@H](C)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](C)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC=1C=CC=CC=1)C(O)=O)NC(=O)[C@@H](N)CO)C1=CC=C(O)C=C1 IDLFZVILOHSSID-OVLDLUHVSA-N 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000037230 mobility Effects 0.000 description 1
- 238000000054 nanosphere lithography Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/16—Solid spheres
- C08K7/18—Solid spheres inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/30—Particle morphology extending in three dimensions
- C01P2004/32—Spheres
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/30—Particle morphology extending in three dimensions
- C01P2004/38—Particle morphology extending in three dimensions cube-like
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/003—Additives being defined by their diameter
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/011—Nanostructured additives
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/14—Macromolecular compounds
- C09K2211/1408—Carbocyclic compounds
- C09K2211/1425—Non-condensed systems
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
Definitions
- the present patent application relates to a method of rapid, simple and reproducible manufacture of a colloidal glass with face-centered cubic packing (fcc) formed by spheres of silica (Si0 2 ) of 250 nm of diameter and infiltrated with the luminescent polymer Poly [2-methoxy-5- (3 ', 7'-dimethyloctyloxy) -1, 4-phenylene-vinyl] (MDMO-PPV) using the spin-coating technique .
- fcc face-centered cubic packing
- the present invention has its application within the field of the lighting industry and, more specifically, to the industry dedicated to the manufacture of luminescent flat screens, lamps, organic lasers, signs, light indicators and others.
- OLED Organic Light Emitting Diodes
- OLED Organic Light Emitting Diodes
- an electroluminescent layer formed by a film of semiconductor and luminescent organic components that react to a given electrical stimulation, obtaining, in this way, a device that transforms electrical energy into light energy.
- OLED technology has developed rapidly due to its potential applications in the manufacture of flat screens, notices, solid state lighting elements, among others.
- the basic structure of an OLED consists of one or several layers of semiconductor organic material that are located between two electrodes (active region).
- the negative electrode cathode
- the positive electrode anode
- the active region in an OLED is typically formed by a layer of a luminescent organic molecule and an organic hole transport layer (HTL, Hole Transport Layer).
- the cathode injects electrons into the organic molecule, while the anode extracts electrons, that is, it injects positive (hollow) charges into the molecule.
- the electron-hollow pair which corresponds to an excited state, can interact to form an exciton, which can decay radiatively, generating a photon of energy equal to the difference between the HOMO (High Occupied Molecular Orbital) levels and LUMO (Low Unoccupied Molecular Orbital) molecule.
- the so-called excitonic radiation of the molecule By the Einstein-Planck ratio the energy of each photon is equivalent to the wavelength (color) of the emitted radiation.
- an MDMO-PPV / OLED manufactured from the MDMO-PPV luminescent polymer
- a layer is used thin tin oxide doped with Indium (ITO) which is a highly transparent degenerate semiconductor type p in the visible range that, within the structure of the OLED, functions as a hollow injector contact that supplies positive charges to the luminescent polymer (B) depending on the difference between the maximum of the valence band (Valence Band Maximum, VBM) of the ITO and the energy of the highest occupied molecular orbital (High Occupied Molecular Orbital, HOMO) of the polymer Luminescent and excitonic emission is produced by the organic layer of MDMO-PPV.
- ITO Indium
- an organic, conductive and transparent (D) layer of poly (3,4-ethylenedioxythiophene) -poly (styrene sulfonate) is introduced, abbreviated as PEDOTPSS, which facilitates the transport of holes from the ITO to the luminescent polymer (B), because it has an intermediate energy level between the valence band of the ITO and the HOMO of the polymer.
- the PEDOT: PSS acts within the structure as the HTL.
- cathode (C) different metals that inject electrons into the electroluminescent layer can be used to recombine radiatively with the holes injected from the ITO (anode).
- the efficiency of electron injection is strongly influenced by the work function of the metal used as a cathode, which is usually made of silver or aluminum [Méndez, et al., Rev. Col. Fis., 2010, 42, 397-401 ].
- the radiation emitted by the active region can be classified into three main modes (Fig. 1): The waveguide mode, in which the radiation is trapped in the region formed by the METAL / MDMO-PPV / PEDOT: PSS / ITO due to internal total reflection phenomena, mainly in the ITO / substrate and METAL / MDMO-PPV interface.
- the substrate mode when the radiation is trapped, within the substrate, due to the ITO / substrate and substrate / air interfaces.
- the air mode when the radiation emitted by the active region leaves the device in the air.
- the light extraction efficiency of the device is approximately only 20%, taking into account that the efficiency of the extraction of light from the OLED is defined as the ratio between the intensity of the air mode radiation and the intensity of the total radiation emitted by the active element of the device [F. Masayuki et al., Japanese Journal of Applied Physics 2005; 44, 3669-3677]. This is how, recently, a large number of techniques have been proposed that aim to solve the problem of radiation re-absorption in OLEDs.
- patent application WO2007141364 teaches a method of preparing thin sheets of colloidal glass that includes the steps of: a) preparing a colloidal suspension containing the particles of the compound to be deposited as a thin sheet of colloidal glass, by dispersing said particles in a volatile liquid medium during the spin-coating process and stirring of said suspension for a period of time between 5 minutes and 24 hours, b) application of the colloidal suspension obtained in the previous stage on a substrate, previously treated or not, in sufficient quantity to cover said substrate, and c) rotation of the substrate (spin-coating) with the compound applied in the previous stage at speeds between 1 revolution per second and 200 revolutions per second for a period of time between 1 second and 1,200 seconds.
- patent document No. WO2006110926 refers to an OLED device that uses an emitting polymer layer (MEH-PPV) located between two semi-transparent electrodes, where At least one of the electrodes is perforated and the organic semiconductor polymer is a soluble derivative Poly [p-phenylene-vinyl] (PPV).
- MEH-PPV emitting polymer layer
- US Patent No. US6403238 teaches a process for producing an OLED comprising one or more light emitting active layers, located between two contact injector layers coated on a substrate, where at least one of the active layers they consist of Poly [2-methoxy-5- (2-ethyl-hexyloxy) -1, 4-phenylene-vinyl-1, 2-ethenylene-2,5 dimethoxy-1, 4-phenylene-1, 2-ethylene ] (M3EH-PPV). Where the M3EH-PPV can optionally be mixed with other electrically active materials and applied in a film-like solution on the substrate.
- Colombian application No. CO6470853 refers to a composite material comprising at least two components, wherein at least one component is present in the form of nano-particles, consisting of at least three metals and at least one non-metal and the diameter of which is less than a micrometer, preferably less than 200 nm.
- the composite material according to the invention is particularly well suited for the production of photoactive layers.
- US8329505 teaches a method for the deposition of the cathode for the structure of an OLED diode.
- the invention comprises a number of potential advantages such as less device manufacturing time, less material consumption and less equipment.
- Patent document EP 1929533 refers to a method of manufacturing an OLED screen having a plurality of OLED devices. The method includes providing a plurality of OLED devices on a substrate and sharing a common light transmitting electrode, thus forming a conductive layer structure stamped on the common light transmitting electrode.
- Korean patent No.KR100873517 refers to an OLED-PhC device and its manufacturing method.
- the patent teaches a device and a method that improves the quantum efficiency of the OLED by means of a PhC layer.
- the type of PhC is not specified. It could be a 2D-PhC by lithography or a colloidal crystal. It is also not specified which polymer is used.
- the present invention proposes a method of manufacturing the active region from a single layer consisting of a colloidal crystal (S0 2 spheres of 250 nm in diameter with fcc structure) and the luminescent polymer (MDMO-PPV).
- JP4533041 proposes to improve the quantum efficiency of an OLED by chemical treatment of the substrate to make it porous, without specifying the size of the pores, or the type of substrate.
- Korean patent application No. KR20030026450 teaches an organic light emission device that improves quantum efficiency in an OLED by adding a PhC layer in the upper layer of the device (concave-convex structure). However, this document also does not specify what type of PhC is used.
- Patent No. CN 101000949 proposes a method to improve the monochromaticity of OLEDs using a layer of colloidal glass.
- a layer of the luminescent polymer (without specifying which one) is deposited on a layer of Si0 2 spheres, without specifying the method as this layer is deposited.
- the present invention proposes to synthesize these two layers in a single procedure by means of a spin-coating method.
- Chinese Patent No. CN 101409331 refers to an electroluminescent device that improves the extraction of light by placing a photonic crystal (does not specify which) on the top of the structure.
- the improved display device can be manufactured using a thermal transfer donor film to adhere the photonic crystal layer to the structure.
- Patent application No. US20080284320 proposes a method for the improvement of the quantum efficiency of OLED by using a substrate with a photonic crystal, this crystal comprises a film structure on a substrate produced using a combination of high and low materials refractive index.
- Patent document No. US2010148158 refers to the improvement of the quantum efficiency of OLED which has excellent solubility and thermal stability by incorporating a layer of Si0 2 in nano-powder (nanopowder) by drip coating (dip-coating).
- Puzzo D. et al reports a process for the improvement of the quantum efficiency of OLED by 1 D-PhC of TIN doped with antimony (Nano Lett., 201 1, 1 1 (4), pp 1457-1462).
- Quang-Cherng H. also refers to the fabrication of the structure of a photonic crystal using nano-printing, which substantially improves the Quantum efficiency of PMMA-OLED using 2D-PhC by lithography (Microelectronic Engineering Volume 91, March 2012, Pages 178-184).
- This invention describes the manufacturing process of a colloidal crystal with fcc structure formed by 250 nm diameter silica spheres infiltrated by the MDMO-PPV luminescent polymer by means of the spin-coating technique to subsequently be implemented within the typical structure of an OLED (Fig. 1) in order to improve the quantum efficiency of the device.
- the object of the present invention is the manufacturing process, fast, simple and reproducible, using the spin-coating technique to obtain a thin film formed by a colloidal crystal infiltrated with MDMO-PPV.
- the OLED device configuration comprises a sequence of organic layers located between two electrodes, an anode for the injection of holes and a cathode for the injection of electrons.
- Load carriers move through the transport layers and are in the emission layer (EML, Emission Layer), where excitons are formed that have a certain probability of decaying radiatively.
- EML emission layer
- Emission Layer Emission Layer
- the hole injection layer (HIL) has to facilitate the injection of holes from the anode to the hole transport layer (HTL). This can be achieved by choosing the energy level of the highest occupied molecular orbital (HOMO, High Occupied Molecular Orbital) so that it is between the HOMO of the HTL and the ionization potential of the anode.
- HOMO highest occupied molecular orbital
- the transmission of all organic layers must be high in the region of the emission wavelength.
- the positions of the HOMO and LUMO (Low Unoccupied Molecular Orbital) orbitals of the emission layer (EML) should allow the injection of holes and electrons from the neighboring layers.
- the properties of the electron transport (ETL) and electron injection (EIL) layers would be complementary to those already seen for the HIL and HTL layers.
- the anode has a high ionization potential to inject gaps into the HOMO of the HIL. Therefore, the cathode must be a metal with a low working function.
- at least one electrode must be transparent to achieve high light extraction efficiency. For this reason, ITO (tin-indium oxide) is used as the transparent anode in most cases.
- the OLED device has fewer layers than those mentioned, since some organic materials have several of the properties mentioned above in one layer.
- a single layer must fulfill all the necessary tasks. This can only lead to high quantum efficiencies if this single layer is capable of injecting and transporting holes and electrons with the same ease.
- Carrier injection barriers in the different interfaces and mobilities determine the position of the recombination zone and the performance of the device, affecting the operating voltages and luminescence efficiency.
- the interaction between the electrode and the organic layer also has a substantial influence on the electronic properties of the interface, which in turn determine the properties of the OLED.
- barriers to charge injection by choosing electrodes with working functions well adjusted to the polymer bands are for the ITO and PEDOT: PSS anode, which have the property of being transparent, allowing light to leave the device.
- the material used is a metal with an improved injection of electrons such as aluminum or silver.
- these materials are reactive with oxygen, so the device must be hermetically sealed to prolong its life. It is possible to achieve an improved injection of electrons from these metals, by coating the electrode with a self-assembled polar monolayer.
- luminescent polymers show different advantages over traditional inorganic semiconductors, mainly due to the high degree of solubility. This property allows the use of so-called wet manufacturing techniques (wet techniques) whose main feature is that they do not require high vacuum systems, which makes them cheaper and more versatile opto-electronic device manufacturing techniques.
- wet techniques wet manufacturing techniques
- FIG. 1 Schematic diagram of a typical OLED. The optical modes of the device are indicated.
- Fig. Schematic diagram of an OLED manufactured from the MDMO-PPV electroluminescent polymer showing the different layers that make up the device.
- Fig 3 Schematic diagram of the layer structure in an MDMO-PPV OLED.
- Fig 7. SEM image of a colloidal crystal obtained from a 15:85 w / w solution of Si0 2 spheres of 250 nm in diameter and 1% w / w cyclohexanone.
- Fig 8. SEM image of a colloidal crystal obtained from a 17:83 w / w solution of Si0 2 spheres of 250 nm in diameter and 1% w / w cyclohexanone.
- Fig 9. Transmittance spectrum of a colloidal crystal formed by Si0 2 spheres of 250 nm in diameter and infiltrated with MDMO-PPV.
- the structure of an OLED device has a layered configuration and is manufactured sequentially.
- the ITO anode consists of a transparent glass support or a flexible polymer, on which a mixture of indium and tin oxides that form a conductive layer is deposited. Then, the organic film or films are deposited sequentially. The way of depositing these layers depends on the nature of the chemical substances themselves, which can be polymers or small molecules. Finally, and once all the films have been deposited, the device closes with the cathode, which is constituted by a metal or alloy of low-working metals (aluminum, silver or gold), and which is deposited by techniques of evaporation in high vacuum.
- the cathode which is constituted by a metal or alloy of low-working metals (aluminum, silver or gold), and which is deposited by techniques of evaporation in high vacuum.
- An OLED device manufactured from electroluminescent polymer comprises different layers that are aligned according to the different energy levels of the heterostructure.
- An OLED made from the MDMO-PPV polymer (PPV-OLED) has the structure ITO / PEDOT: PSS / MDMO-PPV / Metal shown in Figure 2.
- a thin layer of doped tin oxide is used as the anode.
- ITO Indian (1) which is a highly transparent degenerated semiconductor type p (transmittance greater than 90%) in the visible range that, within the structure of the OLED, functions as a hollow injector contact that supplies positive loads to the MDMO-PPV as a function of the difference between the maximum of the valence band (VBM, Valence Band Maximum) of the ITO and the energy of the highest occupied molecular orbital (HOMO) of the organic layer MDMO-PPV.
- VBM Valence Band Maximum
- HOMO highest occupied molecular orbital
- a conductive and transparent organic layer PEDOT: PSS (2) is introduced that facilitates the transport of gaps from the ITO (1) to the luminescent polymer, because it has an intermediate energy level between the valence band of the ITO and the HOMO of the polymer.
- the PEDOT is called: PSS as a hollow transport layer (HTL).
- cathode (4) different metals that inject electrons into the electroluminescent layer can be used to radically recombine with the holes injected from the ITO (anode).
- the efficiency of the Electron injection is strongly influenced by the metal's work function that is used as a cathode (1) that is usually made of aluminum, silver or gold.
- the electroluminescent characteristics of the MDMO-PPV system intrinsically depend on the constituent materials, which determine the alignment of their energy levels, the density of holes, and the efficiency of electron injection from the cathode, it is clear that the The efficiency of the device is affected by geometric factors and manufacturing parameters, such as the thickness of the MDMO-PPV (3), PEDOSPSS (2) and ITO (1) layers and, above all, the quality of their interfaces.
- the incorporation of dispersion centers into the structure is one of the most efficient methods to improve the extraction of light from OLEDs for general lighting applications. If a compact hexagonal monolayer (hcp) of colloidal S1O2 spheres is incorporated into the region of the waveguide mode, the efficiency of the device increases considerably because the ordered structure behaves like a two-dimensional diffraction grating. Two-dimensional PhCs have been intensively used to increase light extraction in OLED forming structures known as ITO / Organic / PhC.
- the radiation emitted by the active region MDMO-PPV can be classified into three main modes shown in Figure 3.
- the waveguide mode (5) in which the radiation is trapped in the formed region by the layers of ETL / MDMO-PPV / PEDOT: PSS / ITO due to internal total reflection phenomena, mainly in the ITO / substrate interface and ETL / MDMO-PPV.
- the substrate mode (6) when the radiation is trapped, within the substrate, due to the ITO / substrate and substrate / air interfaces.
- the air mode (7) when the radiation emitted by the active region leaves the device in the air.
- the radiation produced in the active region undergoes different reflection-refraction processes, dependent on the refractive indices, at the interface between the different layers of the structure, this is represented in the figure by the arrows on the interfaces.
- the light extraction efficiency of the device is only 20%, taking into account that the efficiency
- the extraction of light from the OLED is defined as the ratio between the intensity of the air mode radiation and the intensity of the total radiation emitted by the active element of the device.
- the present invention develops a manufacturing method, by the spin-coating technique, of a colloidal crystal formed by silica spheres of about 250 nm in diameter with a face-centered cubic structure (fcc ) and infiltrated with the MDMO-PPV luminescent polymer for application in increasing the extraction of OLED light.
- the manufacturing process of a thin film formed by a colloidal crystal infiltrated with the MDMO-PPV luminescent polymer formed from silica spheres (Si0 2 ), with a face-centered cubic structure (fcc) includes the following steps:
- Synthesis of mono-dispersed Si0 2 spheres i) Synthesis of Si0 2 spheres of 250 nm in diameter by the Stóber method (Stóber, W., Fink, A., Bohn, E., Controlled growth of monodisperse silica spheres in the micron size range, J. Colloid Interface Sci. 1968: 26 (1): 62-69). This method is suitable for synthesizing spheres between 100 and 2000 nm, depending on the reaction time and the relative concentration between water, ammonia, ethanol and tetraethyl orthosilicate (Si (OC2H 5 ) 4 ), abbreviated teos.
- reaction is left for the necessary time, of the order of approximately one hour, depending on the diameter of the S1O2 spheres required.
- a mixture of water and the Si0 2 spheres obtained in the previous step are sedimented at least three times in order to obtain a mono-dispersed solution of S1O2 spheres.
- the suspension is dried by centrifugation at the speed and time necessary for the spheres to separate from the solvent in order to obtain spheres of powdered S1O2, heated to the temperature and time necessary for the solvent to evaporate completely.
- the luminescent polymer is added to the suspension obtained in the previous step so that a mixture, with adequate viscosity and density values, is obtained between the luminescent polymer, the organic solvent and the S1O2 spheres.
- a mixture with adequate viscosity and density values, is obtained between the luminescent polymer, the organic solvent and the S1O2 spheres.
- a soda lime substrate is introduced in chromic solution (mixture of potassium dichromate, sulfuric acid and water in appropriate proportions) for the necessary time as to get that effect.
- the substrate is removed from the chromic solution and rinsed multiple times with deionized water and dried under the flow of an inert gas (argon or nitrogen).
- the thin films obtained are characterized, structurally, by scanning electron microscopy (JEOL JSM 6490) and, optically, by UV-VIS absorbance at an angle (Ocean optics QE65000 Scientific-grade Spectrometer) and photoluminescence (Acton research 270 monochromator, Hamamatsu photomultiplier tube, Standford research systems SR830 Amplifier lock-in).
- the preparation of the colloidal solution of S1O2 spheres requires a high viscosity organic solvent that also allows the polymer to dissolve.
- the solvent is chosen from the family of organic components such as cyclohexanone.
- the present method contemplates the step of introducing an amount of organic polymer into the colloidal solution, so that a colloidal Si0 2 crystal infiltrated with a luminescent polymer is obtained.
- the effect that these characteristics manage to include is that thanks to the use of a high viscosity solvent, a combined colloidal solution preparation is achieved.
- the efficiency of the combined device OLED-colloidal glass is increased when there is a coupling between the absorption of the luminescent polymer and the absorbance of the colloidal crystal.
- the photoluminescence spectrum of MDMO-PPV is shown in Figure 6, which shows that the emission wavelength of MDMO-PPV, dissolved in 1% w / w ciciohexanone is approximately 565 nm (10) . Another emission peak of lower intensity appears at 665 nm (1 1).
Abstract
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KR1020167024764A KR20160119204A (ko) | 2014-02-07 | 2015-02-06 | 면심입방정계(fcc)를 갖고, 실리카(sio2) 구체로 이루어진 발광 mdmo-ppv 폴리머가 침윤된 콜로이드 결정으로 구성되는 박막을 제조하는 방법 |
US15/117,313 US9859497B2 (en) | 2014-02-07 | 2015-02-06 | Method for manufacturing a thin film consisting of a colloidal crystal infiltrated with the luminescent MDMO-PPV polymer made of silica (SiO2) spheres, having a face-centered cubic system (FCC) |
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CN107418580A (zh) * | 2017-07-31 | 2017-12-01 | 南京工业大学 | 一种提高上转换发光薄膜的制备方法 |
CN107983967A (zh) * | 2017-11-06 | 2018-05-04 | 江苏精研科技股份有限公司 | 一种AgW电触头的注射成形制备方法 |
CN108550706A (zh) * | 2018-04-12 | 2018-09-18 | 华中科技大学 | 一种量子点光电探测器的制备方法 |
CN108550706B (zh) * | 2018-04-12 | 2020-02-21 | 华中科技大学 | 一种量子点光电探测器的制备方法 |
CN108516698A (zh) * | 2018-07-06 | 2018-09-11 | 苏州新吴光电科技有限公司 | 一种二氧化硅膜及其制备方法 |
CN111384305A (zh) * | 2018-12-29 | 2020-07-07 | Tcl集团股份有限公司 | 量子点发光二极管的后处理方法 |
CN111384305B (zh) * | 2018-12-29 | 2021-07-02 | Tcl科技集团股份有限公司 | 量子点发光二极管的后处理方法 |
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US9859497B2 (en) | 2018-01-02 |
US20160343948A1 (en) | 2016-11-24 |
KR20160119204A (ko) | 2016-10-12 |
CO6870008A1 (es) | 2014-02-20 |
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