WO2015109988A1 - 像素单元和阵列基板 - Google Patents

像素单元和阵列基板 Download PDF

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Publication number
WO2015109988A1
WO2015109988A1 PCT/CN2015/071078 CN2015071078W WO2015109988A1 WO 2015109988 A1 WO2015109988 A1 WO 2015109988A1 CN 2015071078 W CN2015071078 W CN 2015071078W WO 2015109988 A1 WO2015109988 A1 WO 2015109988A1
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Prior art keywords
pixel electrode
pixel
oblique
lateral
pad
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Ceased
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PCT/CN2015/071078
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English (en)
French (fr)
Inventor
吕启标
姚晓慧
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US14/782,197 priority Critical patent/US9551907B2/en
Publication of WO2015109988A1 publication Critical patent/WO2015109988A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133302—Rigid substrates, e.g. inorganic substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F2201/40—Arrangements for improving the aperture ratio

Definitions

  • the present invention relates to the field of liquid crystal display technologies, and in particular, to a pixel unit and an array substrate having the same.
  • TFT-LCD Thin Film Transistor Liquid Crystal Display
  • the increased resolution of liquid crystal displays means that its pixel units are getting smaller and smaller, the design and manufacturing are becoming more and more difficult, and the distance between the various traces will become smaller and smaller, leading to various problems. Pixel dark lines are one of them.
  • FIG. 1 is a schematic structural diagram of a main unit of a pixel unit in the prior art, the pixel unit includes a plurality of pixel electrodes and pads 20, and the pixel electrodes include a plurality of diagonally extending oblique pixel electrodes 11 and a lateral direction.
  • the extended lateral pixel electrode 12 covers the via hole 30.
  • the pixel electrode is adjacent to the via hole 30 as an open area. Since the pixel unit is small, the pad 20 enters the open area and is opposite to the oblique pixel electrode 11.
  • the projection portions coincide so that the conductive members such as the pad 20 and the lateral pixel electrode 12 interfere with the electric field of the oblique pixel electrode 11.
  • grayish white represents light transmission
  • black represents opacity
  • the circle mark shows that the open area appears dark. Pattern.
  • FIG. 2 is a schematic structural diagram of a sub-cell of a pixel unit in the prior art.
  • the common electrode 40 of the pixel unit entering the open area, the common electrode 40 and the oblique pixel electrode 11 The projected portions coincide, so that the conductive members such as the common electrode 40 and the lateral pixel electrode 12 interfere with the electric field of the oblique pixel electrode 11.
  • grayish white represents light transmission
  • black represents opacity
  • the circle mark shows that the open area appears dark. Pattern.
  • the electric field around the open area of the pixel unit affects the electric field of the oblique pixel electrode, so that the open area has a dark streak phenomenon, and the appearance of the dark line directly causes the aperture ratio of the pixel to decrease, resulting in a decrease in the transmittance of the panel.
  • other display problems such as rustling may be caused, which reduces the display quality.
  • a main object of the present invention is to provide a pixel unit and an array substrate, which are intended to reduce the influence on the electric field of the oblique pixel electrode and improve the display quality.
  • the present invention proposes a general inventive concept of reducing the influence of the electric field around the open area on the electric field of the oblique pixel electrode by reducing the area of the conductive member of the non-oblique pixel electrode located in the open area of the pixel unit.
  • the conductive member may be a conductive unit located in the open area and coincident with the projected portion of the oblique pixel electrode, or a lateral pixel electrode extending at the edge of the oblique pixel electrode and extending laterally.
  • the present invention provides a pixel unit comprising:
  • a plurality of pixel electrodes including obliquely extending oblique pixel electrodes and lateral pixel electrodes extending laterally of the oblique pixel electrode edges, the plurality of pixel electrodes constituting a display area, the display area having an open area a portion of the lateral pixel electrode located in the open region has a notch on a side close to the oblique pixel electrode;
  • a conductive unit located in the open area and coincident with a projected portion of the oblique pixel electrode, the conductive unit being cornered or rounded at a corner of the oblique pixel electrode.
  • the present invention further provides a pixel unit, comprising:
  • a plurality of pixel electrodes including obliquely extending oblique pixel electrodes and lateral pixel electrodes extending laterally of the oblique pixel electrode edges, the plurality of pixel electrodes constituting a display area, the display area having an open area;
  • a conductive unit located in the open area and coincident with a projected portion of the oblique pixel electrode, the conductive unit being cornered or rounded at a corner of the oblique pixel electrode.
  • the conductive unit is a pad or a common electrode.
  • the pad In the main area of the pixel unit, the pad is located in the open area and coincides with the projected portion of the oblique pixel electrode, where the pad is a conductive unit; in the pixel unit sub-area, the common An electrode is located in the open area and coincides with a projected portion of the oblique pixel electrode, and the common electrode is a conductive unit.
  • the conductive unit is a pad
  • the lateral pixel electrode coincides with a projected portion of the pad
  • the lateral pixel electrode extends obliquely away from the open area at a projection junction of the two.
  • the leg is parallel to the oblique pixel electrode.
  • the conductive unit is a common electrode
  • the pixel unit further includes a pad adjacent to the open area
  • the lateral pixel electrode is coincident with a projected portion of the pad
  • the horizontal pixel electrode is The projection joint extends obliquely toward a direction away from the open area, the leg being parallel to the oblique pixel electrode.
  • a portion of the lateral pixel electrode located in the open region has a notch on a side close to the oblique pixel electrode.
  • the present invention further provides another pixel unit comprising a plurality of pixel electrodes including obliquely extending oblique pixel electrodes and lateral pixel electrodes extending laterally of the oblique pixel electrode edges
  • the plurality of pixel electrodes constitute a display area, and the display area has an open area, and a portion of the lateral pixel electrode located in the open area has a notch on a side close to the oblique pixel electrode.
  • the pixel unit further includes a pad, the pad is located in the open area and coincides with a projected portion of the oblique pixel electrode, and a corner of the pad near the oblique pixel electrode is a notch Or rounded corners.
  • the pixel unit further includes a common electrode located in the open area and a pad adjacent to the open area, the common electrode is coincident with a projected portion of the oblique pixel electrode, and the common electrode is adjacent to the An angle of the oblique pixel electrode is a notch or a rounded corner.
  • the lateral pixel electrode coincides with a projected portion of the pad, and the lateral pixel electrode extends obliquely toward a direction away from the opening region at a projection junction of the two, the leg and the oblique Parallel to the pixel electrode.
  • the invention also provides an array substrate, comprising a glass substrate and a pixel unit disposed on the glass substrate, wherein:
  • the pixel unit includes: a plurality of pixel electrodes including obliquely extending oblique pixel electrodes and lateral pixel electrodes extending laterally of the oblique pixel electrode edges, the plurality of pixel electrodes constituting a display area, the display area An opening region is disposed in the opening region and coincides with a projected portion of the oblique pixel electrode, and a corner of the conductive unit adjacent to the oblique pixel electrode is notched or rounded.
  • the present invention further provides an array substrate including a glass substrate and a pixel unit disposed on the glass substrate, the pixel unit including a plurality of pixel electrodes including obliquely extending oblique directions a pixel electrode and a lateral pixel electrode extending laterally of the oblique pixel electrode, the plurality of pixel electrodes constituting a display region, the display region having an open region, wherein the lateral pixel electrode is located at a portion of the open region A side of the oblique pixel electrode has a notch.
  • the pixel unit provided by the present invention reduces the influence of the electric field around the open area on the electric field of the oblique pixel electrode by reducing the area of the conductive member of the non-oblique pixel electrode located in the open area of the pixel unit. Specifically, for the pixel cell main region, the influence of the electrode electric field is reduced by reducing the area of the pad or/and the lateral pixel electrode; for the pixel unit sub-region, by reducing the common electrode or/and the lateral pixel electrode The area is reduced to reduce the effect on the electric field of the electrode. Thereby, the influence of the liquid crystal guiding on the opening area is reduced, the pixel darkening phenomenon is improved, the aperture ratio of the pixel is improved, and the display quality is improved.
  • FIG. 1 is a schematic structural view of a main area of a pixel unit in the prior art
  • 1a is a simulation effect diagram of the transmittance of the pixel unit of FIG. 1;
  • FIG. 2 is a schematic structural diagram of a pixel unit sub-area in the prior art
  • 2a is a simulation effect diagram of the transmittance of the pixel unit of FIG. 2;
  • FIG. 3 is a schematic structural view of a main area of an embodiment of a pixel unit of the present invention.
  • FIG. 3a is a simulation effect diagram of the transmittance of the pixel unit of FIG. 3;
  • FIG. 4 is a schematic structural view of an embodiment of a pixel unit of the present invention.
  • 4a is a simulation effect diagram of the transmittance of the pixel unit of FIG. 4.
  • the present general inventive concept is to reduce the influence of the electric field around the open area on the electric field of the oblique pixel electrode by reducing the area of the conductive member of the non-oblique pixel electrode located in the open area of the pixel unit.
  • the conductive member comprises a lateral pixel electrode located at an edge of the oblique pixel electrode and extending laterally or/and a conductive unit located in the open region and coincident with the projected portion of the oblique pixel electrode.
  • the conductive unit in the main area of the pixel unit, is a pad located in the open area of the pixel unit and coincident with the projected portion of the oblique pixel electrode; in the sub area of the pixel unit, The conductive unit is a common electrode that is located in the open area of the pixel unit and coincides with the projected portion of the oblique pixel electrode.
  • the pixel unit includes a gate line 100, a source line 200, a thin film transistor 300, a pad 400, an insulating layer (not shown), and a plurality of pixel electrodes. .
  • the gate line 100 intersects the source line 200, preferably perpendicular to each other, the gate line 100 extends laterally, and the source line 200 extends longitudinally.
  • the pad 400 is formed at the intersection of the gate line 100 and the source line 200, and the pad 400 is electrically connected to the gate line 100 and the source line 200, respectively, and the pad 400 may be rectangular, trapezoidal, rhombic or polygonal.
  • the thin film transistor 300 is also located at the intersection of the gate line 100 and the source line 200, and the gate of the thin film transistor 300 is electrically connected to the gate line 100, the source is electrically connected to the source line 200, and the drain is electrically connected to the pad 400. .
  • the insulating layer covers the gate line 100 and the source line 200 and covers the pad 400.
  • the insulating layer is provided with a via 401 at a position corresponding to the pad 400.
  • the pixel electrode is made of a transparent conductive material, preferably indium tin oxide (ITO), which is electrically connected to the pad 400 through the via 401.
  • the pixel electrode includes an obliquely extending oblique pixel electrode 510, a laterally extending lateral pixel electrode 520, and a longitudinally extending longitudinal pixel electrode 530.
  • a plurality of oblique pixel electrodes 510 are arranged parallel to each other and spaced apart.
  • the plurality of pixel electrodes constitute a display area, and an end of the display area adjacent to the via 401 has an open area. Since the pixel unit is small and the space is limited, the pad 400 is also located in the open area and coincides with the projected portion of the oblique pixel electrode 510.
  • the present embodiment cuts off a corner of the pad 400 near the oblique pixel electrode 510 to become a corner 410, thereby reducing the pad on the one hand.
  • the area of 400 greatly reduces the effect of pad 400 on oblique pixel electrode 510.
  • the influence of the electric field at the right angle portion on the electric field of the oblique pixel electrode 510 can be effectively eliminated, thereby effectively suppressing the dark streaking phenomenon in the open area and improving the display quality.
  • a notch 521 is dug in a portion of the lateral pixel electrode 520 located at the portion of the opening region close to the oblique pixel electrode 510, such that the width of the portion of the lateral pixel electrode 520 is smaller than the width of the remaining portion, preferably half of the width of the remaining portion. .
  • the area of the lateral pixel electrode 520 is reduced, the influence of the lateral pixel electrode 520 on the electric field of the oblique pixel electrode 510 is reduced, the dark streaking phenomenon of the open area is further improved, and the display quality is improved.
  • the lateral pixel electrode 520 also coincides with the projected portion of the pad 400, and the lateral pixel electrode 520 obliquely extends a leg 522 away from the opening region at the projection junction of the two, the leg 522 and the oblique pixel electrode 510 parallel.
  • the electric field direction of the leg 522 of the lateral pixel electrode 520 is the same as the electric field direction of the oblique pixel electrode 510, which effectively reduces the influence of the lateral pixel electrode 520 on the electric field of the oblique pixel electrode 510, and improves the dark streak phenomenon.
  • FIG. 1a and FIG. 3a are diagrams showing the effect of simulating the transmittance of the pixel unit by using the Expert LCD software, wherein FIG. 1a is an effect diagram of the prior art, and FIG. An improved rendering of the main area of the pixel unit.
  • grayish white represents light transmission
  • black represents opaque light.
  • the comparison of the simulation results before and after the improvement shows that the dark streaks near the open area (or via area) of the main area of the pixel unit are well improved.
  • any one of the two, or any combination of the two can achieve the object of the present invention, and reduce the influence of the electric field around the open area on the electric field of the oblique pixel electrode 510. Improve display quality.
  • the pixel unit includes a gate line 100, a source line 200, a thin film transistor 300, a pad 400, a common electrode, an insulating layer (not shown), and a plurality of Pixel electrode.
  • the gate lines 100 intersect the source lines 200, preferably perpendicular to each other, i.e., the gate lines 100 extend laterally, and the source lines 200 extend longitudinally.
  • the pad 400 is formed at the intersection of the gate line 100 and the source line 200, and the pad 400 is electrically connected to the gate line 100 and the source line 200, respectively, and the pad 400 may be rectangular, trapezoidal, rhombic or polygonal.
  • the thin film transistor 300 is also located at the intersection of the gate line 100 and the source line 200, and the gate of the thin film transistor 300 is electrically connected to the gate line 100, the source is electrically connected to the source line 200, and the drain is electrically connected to the pad 400. .
  • the insulating layer covers the gate line 100 and the source line 200 and covers the pad 400.
  • the insulating layer is provided with a via 401 at a position corresponding to the pad 400.
  • the pixel electrode is made of a transparent conductive material, preferably indium tin oxide (ITO), which is electrically connected to the pad 400 through the via 401.
  • the pixel electrode includes an obliquely extending oblique pixel electrode 510, a laterally extending lateral pixel electrode 520, and a longitudinally extending longitudinal pixel electrode 530.
  • a plurality of oblique pixel electrodes 510 are arranged parallel to each other and spaced apart.
  • the plurality of pixel electrodes constitute a display area, and an end of the display area adjacent to the via 401 has an open area.
  • the pad 400 is adjacent to the open area but does not coincide with the projection of the oblique pixel electrode 510.
  • the common electrode 600 is located in the open area, and since it has a large area, it coincides with the projected portion of the oblique pixel electrode 510.
  • the present embodiment cuts off the corner of the common electrode 600 near the oblique pixel electrode 510 to become a corner, thereby reducing the area of the common electrode 600.
  • the effect of the common electrode 600 on the oblique pixel electrode 510 is greatly reduced.
  • the influence of the electric field at the right angle portion on the electric field of the oblique pixel electrode 510 can be effectively eliminated, thereby effectively suppressing the dark streaking phenomenon in the open area and improving the display quality.
  • a notch 521 is dug in a portion of the lateral pixel electrode 520 located at the opening region (particularly, a portion close to the pad 400) near the oblique pixel electrode 510, so that the width of the portion of the lateral pixel electrode 520 is smaller than the remaining portion.
  • the width is preferably half the width of the rest.
  • the lateral pixel electrode 520 coincides with the projected portion of the pad 400, and the lateral pixel electrode 520 obliquely extends a leg 522 away from the open area at the projection junction of the two, the leg 522 is parallel to the oblique pixel electrode 510.
  • the electric field direction of the leg 522 of the lateral pixel electrode 520 is the same as the electric field direction of the oblique pixel electrode 510, which effectively reduces the influence of the lateral pixel electrode 520 on the electric field of the oblique pixel electrode 510, and improves the dark streak phenomenon.
  • FIG. 2a and FIG. 4a are simulation results obtained by simulating the transmittance of the pixel unit sub-area by using the Expert LCD software, wherein FIG. 2a is an effect diagram of the prior art, FIG. 4a It is an effect diagram of the improved pixel sub-region of the present invention. In the figure, grayish white represents light transmission, and black represents opaque light. As indicated by the circle, the comparison of the simulation results before and after the improvement shows that the dark streaks near the open area (or via area) of the pixel unit sub-area are well improved.
  • any one of the two, or any combination of the two can achieve the object of the present invention, and reduce the influence of the electric field around the open area on the electric field of the oblique pixel electrode 510. Improve display quality.
  • the pixel unit of the present invention reduces the influence of the electric field around the open area on the electric field of the oblique pixel electrode 510 by reducing the area of the conductive member of the non-oblique pixel electrode 510 located in the open area of the pixel unit.
  • the influence of the electrode electric field is reduced by reducing the area of the pad 400 or/and the lateral pixel electrode 520; for the pixel unit sub-region, by reducing the common electrode 600 or/and
  • the area of the lateral pixel electrode 520 reduces the effect on the electric field of the electrode.
  • the influence of the liquid crystal guiding on the opening area is reduced, the pixel darkening phenomenon is improved, the aperture ratio of the pixel is improved, and the display quality of the panel is improved.
  • the invention also provides an array substrate, which comprises a glass substrate and a pixel unit, and the array substrate is disposed on the glass substrate.
  • the pixel unit includes a pad, a common electrode and a plurality of pixel electrodes, the plurality of pixel electrodes including obliquely extending oblique pixel electrodes and lateral pixel electrodes extending laterally of the oblique pixel electrode edges, the plurality of pixel electrodes constituting a display area,
  • the display area has an open area, and a portion of the lateral pixel electrode located in the open area has a notch on a side close to the oblique pixel electrode; a pad or a common electrode is located in the open area and is opposite to the oblique pixel electrode
  • the projection portions coincide, and a corner of the pad or the common electrode near the oblique pixel electrode is notched or rounded.
  • the pixel unit described in this embodiment is the pixel unit involved in the above embodiment of the present invention, and details are
  • the influence of the electric field around the open region on the electric field of the oblique pixel electrode is reduced by reducing the area of the conductive member of the non-oblique pixel electrode located in the open area of the pixel unit.
  • the influence of the electrode electric field is reduced by reducing the area of the pad or/and the lateral pixel electrode; for the pixel unit sub-region, by reducing the common electrode or/and the lateral pixel electrode The area is reduced to reduce the effect on the electric field of the electrode.

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Abstract

一种像素单元和阵列基板，所述像素单元包括：若干像素电极，其包括斜向延伸的斜向像素电极（510）和位于所述斜向像素电极（510）边缘且横向延伸的横向像素电极（520），所述若干像素电极组成显示区域，所述显示区域具有一开口区；导电单元（400,600），其位于所述开口区并与所述斜向像素电极（510）的投影部分重合，所述导电单元（400,600）靠近所述斜向像素电极（510）的一角为缺角或圆角。从而降低了开口区周边电场对斜向像素电极（510）电场的影响，减小对开口区液晶导向的影响，改善了像素暗纹现象，提高了像素的开口率，提升了显示质量。

Description

像素单元和阵列基板 技术领域
本发明涉及液晶显示技术领域，尤其是涉及一种像素单元和具有该像素单元的阵列基板。
背景技术
薄膜晶体场效应管液晶显示器(Thin Film Transistor Liquid Crystal Display，TFT-LCD)技术，作为目前主流的显示器制造技术得到了广泛应用。随着制造技术的不断进步，液晶显示器的分辨率也越来越高，从原来的非常普及的高清(1366x 768)到全高清(1920x 1080)，再到目前广受消费者欢迎的4K2K(3840x 2160)电视，甚至接下来将会推出的8K4K(7680x 4320)分辨率电视。
液晶显示器分辨率的提高意味着它的像素单元越来越小，设计和制造的难度越来越大，各种走线之间的距离会越来越小，从而导致各种各样的问题，像素暗纹就是其中之一。
像素暗纹，是指像素单元中靠近过孔(Via hole)的开口区，在液晶面板正常显示时不能正常透光。如图1所示为现有技术中的像素单元主(main)区的结构示意图，所述像素单元包括若干像素电极和焊盘20，像素电极包括若干斜向延伸的斜向像素电极11和横向延伸的横向像素电极12，焊盘20覆盖于过孔30上，像素电极靠近过孔30的地方为开口区，由于像素单元较小，焊盘20进入了开口区并与斜向像素电极11的投影部分重合，从而焊盘20和横向像素电极12等导电部件对斜向像素电极11的电场造成干扰。如图1a所示，为利用Expert LCD软体对像素单元主区的穿透率进行模拟得到的模拟效果图，图中灰白色代表透光，黑色代表不透光，圆圈标示处显示开口区出现了暗纹。
如图2所示为现有技术中的像素单元子(sub)区的结构示意图，图中进入开口区的为像素单元的公共电极40，该公共电极40与斜向像素电极11的 投影部分重合，从而公共电极40和横向像素电极12等导电部件对斜向像素电极11的电场造成了干扰。如图2a所示，为利用Expert LCD软体对像素单元子区的穿透率进行模拟得到的模拟效果图，图中灰白色代表透光，黑色代表不透光，圆圈标示处显示开口区出现了暗纹。
因此，现技术中像素单元开口区周边电场会对斜向像素电极电场产生影响，使得开口区产生了暗纹现象，暗纹的出现则直接导致像素的开口率降低，导致面板的穿透率下降，另外还有可能导致沙沙状姆拉等其他显示问题，降低了显示质量。
发明内容
本发明的主要目的在于提供一种像素单元和阵列基板，旨在降低对斜向像素电极电场的影响，提升显示质量。
为达以上目的，本发明提出一个总的发明构思，即通过减小位于像素单元开口区的非斜向像素电极的导电部件的面积，来降低对开口区周边电场对斜向像素电极电场的影响，进而减小对开口区液晶导向的影响，从而改善像素暗纹现象，提高像素的开口率，提升显示质量。其中，所述导电部件可以是位于开口区并与斜向像素电极的投影部分重合的导电单元，或者是位于斜向像素电极边缘且横向延伸的横向像素电极。
据此，本发明提出一种像素单元，包括：
若干像素电极，其包括斜向延伸的斜向像素电极和位于所述斜向像素电极边缘且横向延伸的横向像素电极，所述若干像素电极组成显示区域，所述显示区域具有一开口区,所述横向像素电极位于所述开口区的部分在靠近所述斜向像素电极的一侧具有一缺口；
导电单元，其位于所述开口区并与所述斜向像素电极的投影部分重合，所述导电单元靠近所述斜向像素电极的一角为缺角或圆角。
根据同样的发明构思，本发明还提出一种像素单元，包括：
若干像素电极，其包括斜向延伸的斜向像素电极和位于所述斜向像素电极边缘且横向延伸的横向像素电极，所述若干像素电极组成显示区域，所述显示区域具有一开口区；
导电单元，其位于所述开口区并与所述斜向像素电极的投影部分重合，所述导电单元靠近所述斜向像素电极的一角为缺角或圆角。
优选地，所述导电单元为焊盘或公共电极。在像素单元主区时，所述焊盘位于所述开口区并与所述斜向像素电极的投影部分重合，此时所述焊盘即为导电单元；在像素单元子区时，所述公共电极位于所述开口区并与所述斜向像素电极的投影部分重合，此时所述公共电极即为导电单元。
优选地，所述导电单元为焊盘，所述横向像素电极与所述焊盘的投影部分重合，且所述横向像素电极于二者投影衔接处向远离所述开口区方向斜向延伸一支脚，所述支脚与所述斜向像素电极平行。
优选地，所述导电单元为公共电极，所述像素单元还包括一靠近所述开口区的焊盘，所述横向像素电极与所述焊盘的投影部分重合，且所述横向像素电极于二者投影衔接处向远离所述开口区方向斜向延伸一支脚，所述支脚与所述斜向像素电极平行。
优选地，所述横向像素电极位于所述开口区的部分在靠近所述斜向像素电极的一侧具有一缺口。
根据同样的发明构思，本发明还提出另一种像素单元，包括若干像素电极，该若干像素电极包括斜向延伸的斜向像素电极和位于所述斜向像素电极边缘且横向延伸的横向像素电极，所述若干像素电极组成显示区域，所述显示区域具有一开口区，所述横向像素电极位于所述开口区的部分在靠近所述斜向像素电极的一侧具有一缺口。
优选地，所述像素单元还包括一焊盘，该焊盘位于所述开口区并与所述斜向像素电极的投影部分重合，所述焊盘靠近所述斜向像素电极的一角为缺角或圆角。
优选地，所述像素单元还包括位于所述开口区的公共电极和靠近所述开口区的焊盘，所述公共电极与所述斜向像素电极的投影部分重合，且所述公共电极靠近所述斜向像素电极的一角为缺角或圆角。
优选地，所述横向像素电极与所述焊盘的投影部分重合，且所述横向像素电极于二者投影衔接处向远离所述开口区方向斜向延伸一支脚，所述支脚与所述斜向像素电极平行。
本发明同时提出一种阵列基板，包括玻璃基板和配置于该玻璃基板上的像素单元，其中：
所述像素单元包括：若干像素电极，其包括斜向延伸的斜向像素电极和位于所述斜向像素电极边缘且横向延伸的横向像素电极，所述若干像素电极组成显示区域，所述显示区域具有一开口区；导电单元，其位于所述开口区并与所述斜向像素电极的投影部分重合，所述导电单元靠近所述斜向像素电极的一角为缺角或圆角。
根据同样的发明构思，本发明还提出一种阵列基板，其包括玻璃基板和配置于该玻璃基板上的像素单元，所述像素单元包括若干像素电极，该若干像素电极包括斜向延伸的斜向像素电极和位于所述斜向像素电极边缘且横向延伸的横向像素电极，所述若干像素电极组成显示区域，所述显示区域具有一开口区，所述横向像素电极位于所述开口区的部分在靠近所述斜向像素电极的一侧具有一缺口。
本发明所提供的一种像素单元，通过减小位于像素单元开口区的非斜向像素电极的导电部件的面积，来降低对开口区周边电场对斜向像素电极电场的影响。具体来说，对于像素单元主区，则通过减小焊盘或/和横向像素电极的面积来降低对电极电场的影响；对于像素单元子区，则通过减小公共电极或/和横向像素电极的面积来降低对电极电场的影响。从而减小对开口区液晶导向的影响，改善了像素暗纹现象，提高了像素的开口率，提升了显示质量。
附图说明
图1是现有技术中的像素单元主区的结构示意图；
图1a是图1中的像素单元的穿透率的模拟效果图；
图2是现有技术中的像素单元子区的结构示意图；
图2a是图2中的像素单元的穿透率的模拟效果图；
图3是本发明的像素单元一实施例主区的结构示意图；
图3a是图3中的像素单元的穿透率的模拟效果图；
图4是本发明的像素单元一实施例子区的结构示意图；
图4a是图4中的像素单元的穿透率的模拟效果图。
本发明目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。
具体实施方式
应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
本发明总的发明构思是通过减小位于像素单元开口区的非斜向像素电极的导电部件的面积，来减小对开口区周边电场对斜向像素电极电场的影响。其中，所述导电部件包括位于斜向像素电极边缘且横向延伸的横向像素电极或/和位于开口区并与斜向像素电极的投影部分重合的导电单元。对于导电单元，在像素单元的主(main)区，所述导电单元即为位于像素单元开口区并与斜向像素电极的投影部分重合的焊盘；在像素单元的子(sub)区，所述导电单元即为位于像素单元开口区并与斜向像素电极的投影部分重合的公共电极。以下结合附图进行详细说明。
参见图3，为本发明的像素单元主区的结构示意图，所述像素单元包括栅极线100、源极线200、薄膜晶体管300、焊盘400、绝缘层(图未示)和若干像素电极。
栅极线100与源极线200相交，优选相互垂直，栅极线100横向延伸，源极线200纵向延伸。焊盘400形成于栅极线100和源极线200相交处，焊盘400分别与栅极线100和源极线200电性连接，焊盘400可以呈矩形、梯形、菱形或多边形。薄膜晶体管300也位于栅极线100和源极线200相交处，且薄膜晶体管300的栅极电性连接栅极线100，源极电性连接源极线200，漏极电性连接焊盘400。绝缘层覆盖栅极线100和源极线200，并覆盖焊盘400，绝缘层对应焊盘400的位置设有过孔401。
像素电极由透明导电材质制成，优选氧化铟锡(ITO)，其通过过孔401与焊盘400电性连接。像素电极包括斜向延伸的斜向像素电极510、横向延伸的横向像素电极520和纵向延伸的纵向像素电极530。斜向像素电极510若干条，相互平行且间隔设置。所述若干像素电极组成显示区域，显示区域靠近过孔401的一端具有一开口区。由于像素单元较小，空间有限，导致焊盘400也位于开口区，并与斜向像素电极510的投影部分重合。
为了降低开口区周边电场对斜向像素电极510电场的影响，本实施例对像素单元做了以下改进：
首先，为了减小焊盘400电场对斜向像素电极510电场的影响，本实施例将焊盘400靠近斜向像素电极510的一角砍掉而成为缺角410，从而一方面减小了焊盘400的面积，极大的减小了焊盘400对斜向像素电极510的影响。特别是对于矩形焊盘400，去掉了开口区的直角后，可以有效消除直角部位电场对斜向像素电极510电场的影响，从而有效抑制了开口区的暗纹现象，提升了显示质量。在某些实施例中，也可以将焊盘400靠近斜向像素电极510的一角改为圆角，同样可以达到上述效果。
进一步地，在横向像素电极520位于开口区的部分靠近斜向像素电极510的一侧挖出一缺口521，使得横向像素电极520该部分的宽度小于其余部分的宽度，优选为其余部分宽度的一半。从而减小了横向像素电极520的面积，降低了横向像素电极520对斜向像素电极510电场的影响，进一步改善了开口区的暗纹现象，提升了显示质量。
进一步地，横向像素电极520也与焊盘400的投影部分重合，且横向像素电极520于二者投影衔接处向远离开口区方向斜向延伸一支脚522，所述支脚522与斜向像素电极510平行。则横向像素电极520支脚522的电场方向与斜向像素电极510的电场方向相同，有效减小了横向像素电极520对斜向像素电极510电场的影响，改善了暗纹现象。
结合参见图1a和图3a，图1a和图3a所示为利用Expert LCD软体对像素单元的穿透率进行模拟得到的效果图，其中图1a为现有技术的效果图，图3a为本发明对像素单元主区进行改进后的效果图。图中灰白色代表透光，黑色代表不透光。如圆圈所标示，改进前后的模拟结果对比可以看出，像素单元主区开口区(或过孔区)附近的暗纹情况得到了很好的改善。
上述对像素单元的三种改进方案，任意实施一种、任意实施两种的组合或同时实施三种，皆能实现本发明的发明目的，降低开口区周边电场对斜向像素电极510电场的影响，提升显示质量。
参见图4，为本发明像素单元子区的结构示意图，所述像素单元包括栅极线100、源极线200、薄膜晶体管300、焊盘400、公共电极、绝缘层(图未示)和若干像素电极。
栅极线100与源极线200相交，优选相互垂直，即栅极线100横向延伸，源极线200纵向延伸。焊盘400形成于栅极线100和源极线200相交处，焊盘400分别与栅极线100和源极线200电性连接，焊盘400可以呈矩形、梯形、菱形或多边形。薄膜晶体管300也位于栅极线100和源极线200相交处，且薄膜晶体管300的栅极电性连接栅极线100，源极电性连接源极线200，漏极电性连接焊盘400。绝缘层覆盖栅极线100和源极线200，并覆盖焊盘400，绝缘层对应焊盘400的位置设有过孔401。
像素电极由透明导电材质制成，优选氧化铟锡(ITO)，其通过过孔401与焊盘400电性连接。像素电极包括斜向延伸的斜向像素电极510、横向延伸的横向像素电极520和纵向延伸的纵向像素电极530。斜向像素电极510若干条，相互平行且间隔设置。所述若干像素电极组成显示区域，显示区域靠近过孔401的一端具有一开口区。焊盘400靠近该开口区，但并不与斜向像素电极510的投影重合。公共电极600则位于开口区，由于其面积较大，因此与斜向像素电极510的投影部分重合。
为了降低开口区周边电场对斜向像素电极510电场的影响，本实施例对像素单元做了以下改进：
首先，为了降低公共电极600电场对斜向像素电极510电场的影响，本实施例将公共电极600靠近斜向像素电极510的一角砍掉而成为缺角，从而减小了公共电极600的面积，极大的减小了公共电极600对斜向像素电极510的影响。特别是公共电极600去掉了开口区的直角后，可以有效消除直角部位电场对斜向像素电极510电场的影响，从而有效抑制了开口区的暗纹现象，提升了显示质量。在某些实施例中，也可以将公共电极600靠近斜向像素电极510的一角改为圆角，同样可以达到上述效果。
进一步地，在横向像素电极520位于开口区的部分(特别是接近焊盘400的部分)靠近斜向像素电极510的一侧挖出一缺口521，使得横向像素电极520该部分的宽度小于其余部分的宽度，优选为其余部分宽度的一半。从而减小了横向像素电极520的面积，降低了横向像素电极520对斜向像素电极510电场的影响，进一步改善了开口区的暗纹现象，提升了显示质量。
进一步地，横向像素电极520与焊盘400的投影部分重合，且横向像素电极520于二者投影衔接处向远离开口区方向斜向延伸一支脚522，所述支脚 522与斜向像素电极510平行。则横向像素电极520支脚522的电场方向与斜向像素电极510的电场方向相同，有效减小了横向像素电极520对斜向像素电极510电场的影响，改善了暗纹现象。
结合参见图2a和图4a，图2a和图4a所示为利用Expert LCD软体对像素单元子区的穿透率进行模拟得到的模拟效果图，其中图2a为现有技术的效果图，图4a为本发明对像素单元子区改进后的效果图。图中灰白色代表透光，黑色代表不透光。如圆圈所标示，改进前后的模拟结果对比可以看出，像素单元子区的开口区(或过孔区)附近的暗纹情况得到了很好的改善。
上述对像素单元的三种改进方案，任意实施一种、任意实施两种的组合或同时实施三种，皆能实现本发明的发明目的，降低开口区周边电场对斜向像素电极510电场的影响，提升显示质量。
据此，本发明的像素单元，通过减小位于像素单元开口区的非斜向像素电极510的导电部件的面积，来降低对开口区周边电场对斜向像素电极510电场的影响。具体来说，对于像素单元主区，则通过减小焊盘400或/和横向像素电极520的面积来降低对电极电场的影响；对于像素单元子区，则通过减小公共电极600或/和横向像素电极520的面积来降低对电极电场的影响。从而减小对开口区液晶导向的影响，改善了像素暗纹现象，提高了像素的开口率，提升了面板显示质量。
本发明同时提出一种阵列基板，该阵列基板包括玻璃基板和像素单元，阵列基板配置于玻璃基板上。像素单元包括焊盘、公共电极和若干像素电极，若干像素电极包括斜向延伸的斜向像素电极和位于斜向像素电极边缘且横向延伸的横向像素电极，所述若干像素电极组成显示区域，所述显示区域具有一开口区，横向像素电极位于所述开口区的部分在靠近所述斜向像素电极的一侧具有一缺口；焊盘或公共电极位于所述开口区并与斜向像素电极的投影部分重合，焊盘或公共电极靠近斜向像素电极的一角为缺角或圆角。本实施例中所描述的像素单元为本发明中上述实施例所涉及的像素单元，在此不再赘述。
本发明的阵列基板，通过减小位于像素单元开口区的非斜向像素电极的导电部件的面积，来降低对开口区周边电场对斜向像素电极电场的影响。具 体来说，对于像素单元主区，则通过减小焊盘或/和横向像素电极的面积来降低对电极电场的影响；对于像素单元子区，则通过减小公共电极或/和横向像素电极的面积来降低对电极电场的影响。从而减小对开口区液晶导向的影响，改善了像素暗纹现象，提高了像素的开口率，提升了面板显示质量。
应当理解的是，以上仅为本发明的优选实施例，不能因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (20)

  1. 一种像素单元，其特征在于，包括：
    若干像素电极，其包括斜向延伸的斜向像素电极和位于所述斜向像素电极边缘且横向延伸的横向像素电极，所述若干像素电极组成显示区域，所述显示区域具有一开口区,所述横向像素电极位于所述开口区的部分在靠近所述斜向像素电极的一侧具有一缺口；
    导电单元，其位于所述开口区并与所述斜向像素电极的投影部分重合，所述导电单元靠近所述斜向像素电极的一角为缺角或圆角。
  2. 根据权利要求1所述的像素单元，其特征在于，所述导电单元为焊盘，所述横向像素电极与所述焊盘的投影部分重合，且所述横向像素电极于二者投影衔接处向远离所述开口区方向斜向延伸一支脚，所述支脚与所述斜向像素电极平行。
  3. 根据权利要求1所述的像素单元，其特征在于，所述导电单元为公共电极，所述像素单元还包括一靠近所述开口区的焊盘，所述横向像素电极与所述焊盘的投影部分重合，且所述横向像素电极于二者投影衔接处向远离所述开口区方向斜向延伸一支脚，所述支脚与所述斜向像素电极平行。
  4. 一种像素单元，其特征在于，包括：
    若干像素电极，其包括斜向延伸的斜向像素电极和位于所述斜向像素电极边缘且横向延伸的横向像素电极，所述若干像素电极组成显示区域，所述显示区域具有一开口区；
    导电单元，其位于所述开口区并与所述斜向像素电极的投影部分重合，所述导电单元靠近所述斜向像素电极的一角为缺角或圆角。
  5. 根据权利要求4所述的像素单元，其特征在于，所述导电单元为焊盘或公共电极。
  6. 根据权利要求4所述的像素单元，其特征在于，所述导电单元为焊盘，所述横向像素电极与所述焊盘的投影部分重合，且所述横向像素电极于二者投影衔接处向远离所述开口区方向斜向延伸一支脚，所述支脚与所述斜向像素电极平行。
  7. 根据权利要求4所述的像素单元，其特征在于，所述导电单元为公共 电极，所述像素单元还包括一靠近所述开口区的焊盘，所述横向像素电极与所述焊盘的投影部分重合，且所述横向像素电极于二者投影衔接处向远离所述开口区方向斜向延伸一支脚，所述支脚与所述斜向像素电极平行。
  8. 根据权利要求4所述的像素单元，其特征在于，所述横向像素电极位于所述开口区的部分在靠近所述斜向像素电极的一侧具有一缺口。
  9. 一种像素单元，包括若干像素电极，该若干像素电极包括斜向延伸的斜向像素电极和位于所述斜向像素电极边缘且横向延伸的横向像素电极，所述若干像素电极组成显示区域，所述显示区域具有一开口区，其特征在于，所述横向像素电极位于所述开口区的部分在靠近所述斜向像素电极的一侧具有一缺口。
  10. 根据权利要求9所述的像素单元，其特征在于，所述像素单元还包括一焊盘，该焊盘位于所述开口区并与所述斜向像素电极的投影部分重合，所述焊盘靠近所述斜向像素电极的一角为缺角或圆角。
  11. 根据权利要求9所述的像素单元，其特征在于，所述像素单元还包括位于所述开口区的公共电极和靠近所述开口区的焊盘，所述公共电极与所述斜向像素电极的投影部分重合，且所述公共电极靠近所述斜向像素电极的一角为缺角或圆角。
  12. 根据权利要求10所述的像素单元，其特征在于，所述横向像素电极与所述焊盘的投影部分重合，且所述横向像素电极于二者投影衔接处向远离所述开口区方向斜向延伸一支脚，所述支脚与所述斜向像素电极平行。
  13. 根据权利要求11所述的像素单元，其特征在于，所述横向像素电极与所述焊盘的投影部分重合，且所述横向像素电极于二者投影衔接处向远离所述开口区方向斜向延伸一支脚，所述支脚与所述斜向像素电极平行。
  14. 一种阵列基板，包括玻璃基板和配置于该玻璃基板上的像素单元，其特征在于，所述像素单元包括：
    若干像素电极，其包括斜向延伸的斜向像素电极和位于所述斜向像素电极边缘且横向延伸的横向像素电极，所述若干像素电极组成显示区域，所述显示区域具有一开口区；
    导电单元，其位于所述开口区并与所述斜向像素电极的投影部分重合，所述导电单元靠近所述斜向像素电极的一角为缺角或圆角。
  15. 根据权利要求14所述的阵列基板，其特征在于，所述导电单元为焊盘，所述横向像素电极与所述焊盘的投影部分重合，且所述横向像素电极于二者投影衔接处向远离所述开口区方向斜向延伸一支脚，所述支脚与所述斜向像素电极平行。
  16. 根据权利要求14所述的阵列基板，其特征在于，所述导电单元为公共电极，所述像素单元还包括一靠近所述开口区的焊盘，所述横向像素电极与所述焊盘的投影部分重合，且所述横向像素电极于二者投影衔接处向远离所述开口区方向斜向延伸一支脚，所述支脚与所述斜向像素电极平行。
  17. 根据权利要求14所述的阵列基本，其特征在于，所述横向像素电极位于所述开口区的部分在靠近所述斜向像素电极的一侧具有一缺口。
  18. 一种阵列基板，包括玻璃基板和配置于该玻璃基板上的像素单元，其特征在于，所述像素单元包括若干像素电极，该若干像素电极包括斜向延伸的斜向像素电极和位于所述斜向像素电极边缘且横向延伸的横向像素电极，所述若干像素电极组成显示区域，所述显示区域具有一开口区，其特征在于，所述横向像素电极位于所述开口区的部分在靠近所述斜向像素电极的一侧具有一缺口。
  19. 根据权利要求18所述的阵列基板，其特征在于，所述像素单元还包括一焊盘，该焊盘位于所述开口区并与所述斜向像素电极的投影部分重合，所述焊盘靠近所述斜向像素电极的一角为缺角或圆角。
  20. 根据权利要求18所述的阵列基板，其特征在于，所述像素单元还包括位于所述开口区的公共电极和靠近所述开口区的焊盘，所述公共电极与所述斜向像素电极的投影部分重合，且所述公共电极靠近所述斜向像素电极的一角为缺角或圆角。
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