WO2015107795A1 - 検査装置および計測装置 - Google Patents

検査装置および計測装置 Download PDF

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Publication number
WO2015107795A1
WO2015107795A1 PCT/JP2014/082359 JP2014082359W WO2015107795A1 WO 2015107795 A1 WO2015107795 A1 WO 2015107795A1 JP 2014082359 W JP2014082359 W JP 2014082359W WO 2015107795 A1 WO2015107795 A1 WO 2015107795A1
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WO
WIPO (PCT)
Prior art keywords
voltage
inspection
current
detection signal
photon counting
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Ceased
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PCT/JP2014/082359
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English (en)
French (fr)
Japanese (ja)
Inventor
幕内　雅巳
神宮　孝広
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Priority to US15/109,726 priority Critical patent/US9779912B2/en
Publication of WO2015107795A1 publication Critical patent/WO2015107795A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/0059—Measuring for diagnostic purposes; Identification of persons using light, e.g. diagnosis by transillumination, diascopy, fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/0059—Measuring for diagnostic purposes; Identification of persons using light, e.g. diagnosis by transillumination, diascopy, fluorescence
    • A61B5/0075—Measuring for diagnostic purposes; Identification of persons using light, e.g. diagnosis by transillumination, diascopy, fluorescence by spectroscopy, i.e. measuring spectra, e.g. Raman spectroscopy, infrared absorption spectroscopy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2443—Scintillation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2444—Electron Multiplier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2445—Photon detectors for X-rays, light, e.g. photomultipliers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24495—Signal processing, e.g. mixing of two or more signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes

Definitions

  • the present invention relates to an inspection apparatus and a measurement apparatus.
  • Patent Document 1 JP 2005-526239 A (Patent Document 1) as background art in this technical field.
  • This publication provides “a mechanism for detecting relatively large dynamic range intensity values (eg, scattered light, reflected light, or secondary electrons) from a beam emitted from a sample such as a semiconductor wafer. (See summary).
  • Patent Document 2 states that “a voltage adjusting device that supplies a DC voltage to a plurality of elements, a first supply circuit that supplies a first voltage to each high-potential side terminal of the plurality of elements; A voltage regulator comprising: a second supply circuit that supplies a plurality of voltages depending on characteristics of the plurality of elements, which are smaller than the first voltage, to each low potential side terminal of the plurality of elements ”. Has been.
  • Patent Document 1 describes a mechanism for detecting a scattered light intensity from a foreign substance on a wafer surface with a relatively large dynamic range when a beam is irradiated on the wafer surface.
  • the detection signal output from the sensor includes dark noise of the sensor element itself. The ratio of the occupancy increases, and it becomes difficult to detect minute foreign matters.
  • a semiconductor photodetection element such as MPPC (Multi-Pixel Photon Counter, a registered trademark of Hamamatsu Photonics) or a photomultiplier tube is used as a photon detection sensor. Is done.
  • the laser light source oscillates, if the response speed of the photon counting sensor is insufficient for incident light scattered repeatedly at a high speed, the signal component detected by the photon counting sensor is lowered, and high precision of minute foreign matters is obtained. Detection becomes difficult.
  • the light detection elements are subdivided into several hundred pixels or more, and there is a possibility that the multiplication factor of each light detection element is biased for each part on the device.
  • the output current from the photon counting sensor varies depending on the light incident part, the number of photons cannot be distinguished from the output current value. There is a problem that accuracy detection becomes difficult.
  • the present invention provides a detection circuit that detects a minute foreign matter with high accuracy in a photon counting sensor, and an inspection device and a measurement device using the detection circuit.
  • the present application includes a plurality of means for solving the above-described problems.
  • an inspection or measurement apparatus for inspecting or measuring the sample surface, the irradiation means for irradiating the sample surface with a laser beam, Detecting means for detecting scattered light from the sample surface and generating a detection signal, wherein the detecting means includes M (M is a natural number, M ⁇ N) a photon counting sensor for outputting an output signal, M current-voltage converting means for current-voltage converting the output signals of the photon counting sensor, and a voltage applying means for applying a reference voltage to the current-voltage converting means. And detection signal generation means for generating a detection signal based on the output of the current-voltage conversion means.
  • minute foreign matter can be detected with high accuracy in the photon counting sensor.
  • Photon counting sensors are widely applied in fields such as semiconductor inspection or measurement devices and medical / medical devices.
  • a semiconductor inspection or measurement device scans and irradiates a wafer to be inspected or measured with an electron beam, converts the generated secondary electrons into light by scintillation, detects this light with a photon counting sensor, and measures it.
  • a detection image is generated, and an inspection or measurement is performed based on the measurement or detection image.
  • the pattern on the semiconductor is detected at the end of each manufacturing process in order to detect abnormalities and defects in the manufacturing process early or in advance. Inspection or measurement is performed.
  • an example of an inspection apparatus that realizes a high-speed response of a photon counting sensor with respect to pulse oscillation of a laser light source and suppresses variation in optical image magnification on the device for high-precision detection of minute foreign matters will be described.
  • FIG. 1 is an example of a configuration diagram of the inspection apparatus of the present embodiment.
  • the inspection apparatus 50 includes a laser 2, a reflector 3, lenses 4 and 5, a sensor 6, an amplification circuit 7, an A / D conversion circuit 8, a data processing unit 9, a CPU 10, a map output unit 11, a stage control unit 12, and a rotary stage. 13, a translation stage 14, a clock detection unit 20, and a delay control unit 24.
  • the wafer 1 is placed on the rotary stage 13, and laser light output from the laser light source 2 is irradiated onto the wafer 1 through the reflector 3 and the lens 4.
  • the wafer 1 is rotated by the rotary stage 13 and linearly operated by the translation stage 14 via the stage control unit 12 under the control of the CPU 10.
  • the laser light irradiated onto the wafer 1 becomes a spiral locus on the entire surface of the wafer 1, and the entire surface of the wafer 1 can be inspected.
  • the clock detection unit 20 includes a sensor 21, an IV conversion circuit 22, and a clock reproduction circuit 23, and generates a clock signal synchronized with the laser light source 2 based on the laser light transmitted through the reflection plate 3.
  • the clock signal generated by the clock detection unit 20 is delay-adjusted via the delay adjustment unit 24, and based on this, the detection signal output from the sensor 6 is amplified by the amplifier circuit 7.
  • the A / D conversion circuit 8 performs sampling. 2 is an example of a configuration diagram of the sensor 6 in the inspection apparatus 50, and FIG. 3 is an example of a configuration diagram of a molecular lattice counting sensor 200 in the present embodiment.
  • the sensor 6 includes a photon counting sensor 200, a bias voltage setting unit 100, IV conversion circuits 101, 102, 103, and 104, an addition circuit 105, and a voltage setting unit 106.
  • the photon counting sensor 200 is equipped with an N-pixel photodetecting element, and outputs a common output for each of the four areas 201, 202, 203, and 204, as shown in FIG.
  • the IV conversion circuits 101, 102, 103, and 104 convert the output currents I1, I2, I3, and I4 from the areas 201, 202, 203, and 204 of the photon counting sensor 200 into voltages V1, V2, V3, and V4, respectively.
  • the addition circuit 105 adds the outputs of the IV conversion circuits 101, 102, 103, and 104, and outputs a detection signal Vo.
  • the voltage setting unit 106 controls the reference voltage of the IV conversion circuits 101, 102, 103, 104, and as a result, the voltage output by the bias voltage setting unit in the areas 201, 202, 203, 204 of the photon counting sensor 200. A difference voltage between Vb0 and the voltage Vb1 output from the voltage setting means 106 is applied.
  • the output voltage Vo of the sensor 6 is given by Equation 1.
  • Vb1 and R are known, and by measuring Vo, it is possible to measure the output current of the photon counting sensor 200, that is, the amount of light incident on the photon counting sensor.
  • Vo (I1 + I2 + I3 + I4) .R-4.Vb1
  • N N> M, both M and N are natural numbers
  • each of them is independently converted into a voltage by an IV conversion circuit and added and output.
  • the photon counting sensor in the photon counting sensor according to the configuration of the present embodiment, it is possible to suppress the variation in the multiplication factor of each photodetecting element that corresponds to the high-speed pulse oscillation of the laser light source and is divided into several hundred pixels or more. High precision detection of minute foreign matter is possible.
  • the reference voltage Vb1 is applied to all of the IV conversion circuits 101 to 104.
  • the reference voltage Vb1 is applied to each IV conversion circuit in accordance with the variation for each light incident region. Even in this case, the multiplication factor of the photon counting sensor can be controlled.
  • the inspection apparatus on which the photon counting sensor is mounted has been described.
  • the apparatus on which the photon counting sensor is mounted is not limited thereto, and may be a semiconductor measuring apparatus or a mass spectrometer.
  • FIG. 6 shows an example of a configuration diagram of the semiconductor measuring device.
  • an electron beam 303 is generated by the electron gun 301, and the semiconductor wafer 306 on the stage 307 is scanned with the electron beam 303 via the focusing lens 302, the deflection control unit 304, and the objective lens 305.
  • Secondary electrons 308 are generated by irradiation of the electron beam 303 on the semiconductor wafer 306, and the secondary electrons 308 are detected via the scintillator 309 and the photon counting sensor 310, and the data processor 311 generates and measures or inspects the detected image. Done.
  • Fig. 7 shows an example of the configuration of the mass spectrometer.
  • a sample is ionized and captured between electrodes in a vacuum chamber, a high voltage is scanned on this electrode to release ions of mass corresponding to each voltage, and this is converted into light by scintillation, Mass analysis is performed by detecting a signal with a photon counting sensor.
  • the sample gas 401 is injected into the sample introduction chamber 402 and ionized in the ionization chamber 403.
  • the ionized sample is captured by the ion trap unit 404, and by scanning a high voltage from the high voltage application unit 405, ions having a mass corresponding to each voltage are detected via the scintillator 406 and the photon counting sensor 407. In the data processing unit 408, mass part analysis is performed.
  • the apparatus on which the photon counting sensor is mounted is not limited to the inspection apparatus in the following embodiments as in this embodiment.
  • FIG. 4 is a configuration diagram showing a second embodiment of the sensor of the inspection apparatus according to the present invention.
  • symbol same as Example 1 is abbreviate
  • a photon counting sensor 200 includes a photon counting sensor 200, a bias voltage setting unit 100, IV conversion circuits 101, 102, 103, and 104, addition circuits 105 and 107, and a voltage setting unit 106.
  • reference voltages Vb 1, Vb 2, Vb 3, Vb 4 are output from the voltage setting means 106, and the regions 201, 202, 203, 204 of the photon counting sensor 200 are output via the IV conversion circuits 101, 102, 103, 104.
  • the gain is set by varying the bias voltage for each region.
  • the output voltage of the voltage setting means 106 is added via the adder circuit 107, and finally the detection signal Vo is obtained via the adder circuit 105.
  • the voltages V1, V2, V3, V4, V5, and Vo are given by equations 2-7.
  • an adder circuit 107 for adding the output voltages of the voltage setting means 106 is provided, and finally the adder circuit 105 adds the outputs of the IV conversion circuits and the output of the adder circuit 107 to detect the detection signal Vo. Since the voltage output from the voltage setting means 106 can be canceled, it is possible to detect a minute foreign matter with high accuracy.
  • the reference voltage is set for each IV conversion circuit.
  • the voltage output from the voltage setting means 106 is output. Since it can be offset, it is possible to detect minute foreign matter with high accuracy.
  • FIG. 5 is a block diagram showing a third embodiment of the sensor of the inspection apparatus according to the present invention.
  • symbol same as Example 1 is abbreviate
  • a photon counting sensor 200 includes a photon counting sensor 200, a bias voltage setting unit 100, IV conversion circuits 101, 102, 103, and 104, an addition / subtraction circuit 108, and a voltage setting unit 106.
  • the sensor 6 outputs the reference voltages Vb1, vb2, Vb3, and Vb4 from the voltage setting unit 106, and the region of the photon counting sensor 200 through the IV conversion circuits 101, 102, 103, and 104.
  • the multiplication factor is set by varying the bias voltage for each of the areas 201, 202, 203, and 204, and the outputs from the IV conversion circuits 101, 102, 103, and 104 are given by the above equations 2-5.
  • the voltage setting means 106 outputs V5 equal to the voltage obtained by adding Vb1 to Vb4, thereby obtaining the detection signal Vo given by the above equation 7 via the adder / subtractor circuit 108.
  • the variation can be adjusted to be uniform. Furthermore, by outputting the voltage V5 obtained by adding Vb1 to Vb4 from the voltage setting means 106 and finally detecting the detection signal Vo by the addition / subtraction circuit 108, the output of the voltage from the voltage setting means 106 can be canceled. Therefore, it is possible to detect minute foreign matters with high accuracy.
  • a photon counting sensor having N pixels is used in common for every four regions, and each of them is independently converted into a voltage by an IV conversion circuit and added and output.
  • the bias voltage is independently controlled for each region of the photon counting sensor via the conversion means
  • the region M of the photon counting sensor may be N> M, and the number of pixels included in each region Needless to say, does not have to be equal to N / M pixels.
  • the voltage setting means can be variably controlled from a CPU or a user program (not shown) in accordance with, for example, the operation compensation of the photon counting sensor with respect to temperature fluctuations and the usage status of the inspection apparatus, and the voltage setting means is not used. Needless to say, the same effects as in the first to third embodiments can be obtained by setting an arbitrary reference voltage in the IV conversion circuit.
  • the present invention is not limited to the above-described embodiments, and includes various modifications.
  • the first to third embodiments described above are described in detail for easy understanding of the present invention, and are not necessarily limited to those having all the configurations described.
  • a part of the configuration of one embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of one embodiment.
  • addition / deletion of other configurations for a part of the configuration of each embodiment It is possible to make a substitution.
  • the senor 6 is described as being applied to a wafer inspection apparatus.
  • the present invention is not limited to an inspection apparatus, and may be applied to any apparatus that uses a photon counting sensor as a detection unit, such as a measurement apparatus or a medical / medical apparatus. It is possible to detect with high accuracy.
  • each of the above-described configurations, functions, processing units, processing means, and the like may be realized by hardware by designing a part or all of them with, for example, an integrated circuit.
  • each of the above-described configurations, functions, and the like may be realized by software by the CPU 10 interpreting and executing a program that realizes each function.
  • Information such as programs, tables, and files for realizing each function can be stored in a recording device such as a memory, a hard disk, an SSD (Solid State Drive), or a recording medium such as an IC card, an SD card, or a DVD.
  • control lines and information lines indicate what is considered necessary for the explanation, and not all the control lines and information lines on the product are necessarily shown. Actually, it may be considered that almost all the components are connected to each other.

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  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
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  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
PCT/JP2014/082359 2014-01-20 2014-12-08 検査装置および計測装置 Ceased WO2015107795A1 (ja)

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JP2014007429A JP6259669B2 (ja) 2014-01-20 2014-01-20 検査装置および計測装置

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US10677942B2 (en) 2016-02-01 2020-06-09 Shenzhen Xpectvision Technology Co., Ltd. X-ray detectors capable of managing charge sharing

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JP2002184470A (ja) * 2000-12-11 2002-06-28 Fuji Electric Co Ltd 充放電電流測定装置
JP2002530631A (ja) * 1998-11-18 2002-09-17 ケーエルエー−テンカー コーポレイション 反射表面のナノメートルスケールの形態測定のための検出システム
JP2007248255A (ja) * 2006-03-15 2007-09-27 Omron Corp 光強度計測方法及び光強度計測装置並びに偏光解析装置およびこれを用いた製造管理装置
JP2013231631A (ja) * 2012-04-27 2013-11-14 Hitachi High-Technologies Corp 欠陥検査装置および欠陥検査方法
JP2013234966A (ja) * 2012-05-11 2013-11-21 Hitachi High-Technologies Corp 欠陥検査方法および欠陥検査装置

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US7710557B2 (en) * 2007-04-25 2010-05-04 Hitachi High-Technologies Corporation Surface defect inspection method and apparatus
JP5341440B2 (ja) * 2008-09-10 2013-11-13 株式会社日立ハイテクノロジーズ 検査装置
JP5357509B2 (ja) * 2008-10-31 2013-12-04 株式会社日立ハイテクノロジーズ 検査装置、検査方法および検査装置の校正システム
JP2012135096A (ja) 2010-12-20 2012-07-12 High Energy Accelerator Research Organization 電圧調整装置、電圧調整方法、電圧調整システム
JP2013228254A (ja) * 2012-04-25 2013-11-07 Hitachi High-Technologies Corp 光学式表面欠陥検査装置及び光学式表面欠陥検査方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143251A (ja) * 1982-02-22 1983-08-25 Fuji Electric Corp Res & Dev Ltd 板状物体の欠陥検出方法
JP2002530631A (ja) * 1998-11-18 2002-09-17 ケーエルエー−テンカー コーポレイション 反射表面のナノメートルスケールの形態測定のための検出システム
JP2002184470A (ja) * 2000-12-11 2002-06-28 Fuji Electric Co Ltd 充放電電流測定装置
JP2007248255A (ja) * 2006-03-15 2007-09-27 Omron Corp 光強度計測方法及び光強度計測装置並びに偏光解析装置およびこれを用いた製造管理装置
JP2013231631A (ja) * 2012-04-27 2013-11-14 Hitachi High-Technologies Corp 欠陥検査装置および欠陥検査方法
JP2013234966A (ja) * 2012-05-11 2013-11-21 Hitachi High-Technologies Corp 欠陥検査方法および欠陥検査装置

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