WO2015102225A1 - Dispositif électroluminescent à fiabilité améliorée - Google Patents

Dispositif électroluminescent à fiabilité améliorée Download PDF

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Publication number
WO2015102225A1
WO2015102225A1 PCT/KR2014/010917 KR2014010917W WO2015102225A1 WO 2015102225 A1 WO2015102225 A1 WO 2015102225A1 KR 2014010917 W KR2014010917 W KR 2014010917W WO 2015102225 A1 WO2015102225 A1 WO 2015102225A1
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layer
light emitting
emitting device
metal
reflective
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PCT/KR2014/010917
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English (en)
Korean (ko)
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김종만
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일진엘이디(주)
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body

Definitions

  • the present invention relates to a light emitting device, and more particularly, to stably insulate the light emitting structure, the first bonding pad, and the second bonding pad, which are attached in a flip type, and to reflect light scattered from the bottom surface in a vertical direction.
  • the present invention relates to a light emitting device having improved reliability capable of maximizing light extraction efficiency by increasing reflectance due to introduction of a reflective insulating layer.
  • a light emitting device is a device using a light emitting phenomenon generated during re-combination of electrons and holes.
  • a typical light emitting device there is a nitride semiconductor light emitting device using a nitride semiconductor such as GaN.
  • the nitride semiconductor light emitting device has a large band gap and can implement various color lights, and has excellent thermal stability and is being applied to many fields.
  • the light emitting device package is usually manufactured by the following process. First, a light emitting device is mounted on a package substrate, and an electrode provided in the light emitting device is electrically connected to an external electrode through a wiring process. Thereafter, the encapsulant including the phosphor is coated on the package substrate and cured to mold the light emitting device.
  • An object of the present invention is to provide a light emitting device having an improved reliability that can improve the light extraction efficiency by increasing the reflectance by the introduction of a reflective insulating layer, as well as to ensure excellent adhesion between the reflective layer and the lead frame.
  • a light emitting device having improved reliability includes a light emitting structure having a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer formed on a substrate; First and second bonding pads electrically connected to the first conductive nitride semiconductor layer and the second conductive nitride semiconductor layer, respectively; A reflective insulating layer formed on at least one region of the light emitting structure, the first bonding pad and the second bonding pad; A lead frame disposed to face the first bonding pad and the second bonding pad and having at least one first trench; And a conductive paste formed between the reflective insulating layer and the lead frame to electrically bond the first and second bonding pads to the lead frame, respectively.
  • the first bonding pad and the second bonding pad may be formed by a reflective insulating layer formed to cover the light emitting structure, the first bonding pad, and the second bonding pad attached to the lead frame in a flip type. Not only can it be stably insulated, but the light scattered by the reflective insulating layer disposed on the bottom can be reflected in the vertical direction, so that the reflectance can be increased to improve light extraction efficiency.
  • the light emitting device having improved reliability is designed by designing a second trench in which a portion of the reflective insulating layer is removed and a first trench in which a portion of the lead frame disposed at a position corresponding to the second trench is removed.
  • the light emitting device having improved reliability according to the present invention has a flip-type mounting of the light emitting structure, the first bonding pad and the second bonding pad via a conductive paste, compared to the conventional method using a metal wire, and thus an electrical connection path.
  • FIG. 1 is a cross-sectional view showing a light emitting device having improved reliability according to the first embodiment of the present invention.
  • FIG. 2 is an enlarged view of a portion of FIG. 1.
  • FIG. 3 is an enlarged view illustrating an example of an enlarged portion of a reflective insulating layer, a lead frame, and a conductive paste of FIG. 1.
  • FIG. 4 is a cross-sectional view illustrating a light emitting device having improved reliability according to a second exemplary embodiment of the present invention.
  • FIG. 1 is a cross-sectional view showing a light emitting device having improved reliability according to the first embodiment of the present invention.
  • the light emitting device 100 having improved reliability according to the first embodiment of the present invention may include a light emitting structure 115, a first bonding pad 120, a second bonding pad 130, and reflective insulation.
  • the light emitting structure 115 includes a first conductivity type nitride semiconductor layer 111, an active layer 112, and a second conductivity type nitride semiconductor layer 113 that are sequentially stacked on the substrate 110.
  • the first conductivity type nitride semiconductor layer 111 is formed on the substrate 110.
  • the first conductive nitride semiconductor layer 111 includes a first layer (not shown) made of AlGaN doped with silicon (Si) and a second layer (not shown) made of undoped GaN (undoped GaN). It may have a laminated structure formed alternately.
  • the first conductivity type nitride semiconductor layer 111 may be grown as a single nitride layer.
  • the first conductive nitride semiconductor layer 111 may be grown in a stacked structure in which a first layer and a second layer including a buffer layer (not shown) are alternately formed. Since excellent crystallinity can be secured, it is more preferable to form a laminated structure.
  • the substrate 110 may be formed of a material suitable for growing a nitride semiconductor single crystal, for example, a sapphire substrate is representative.
  • the substrate 110 may include zinc oxide (ZnO), gallium nitride (GaN), silicon (Si), silicon carbide (SiC), and aluminum nitride (AlN) in addition to the sapphire substrate. It may also be formed of a material selected from).
  • a buffer layer may be further formed between the substrate 110 and the first conductivity type nitride semiconductor layer 111.
  • the buffer layer is a layer provided on the upper surface of the substrate 110, and is formed for the purpose of eliminating the lattice mismatch between the substrate 110 and the first conductivity type nitride semiconductor layer 111, the material May be selected from AlN, GaN and the like.
  • the active layer 112 is formed on the first conductivity type nitride semiconductor layer 111.
  • the active layer 112 includes a single quantum well structure or a multi quantum well layer in which a plurality of quantum well layers and quantum barrier layers are alternately stacked between the first conductivity type nitride semiconductor layer 111 and the second conductivity type nitride semiconductor layer 113. It can have a (multi-quantum well: MQW) structure. That is, the active layer 112 has a multi-quantum well structure by a quantum barrier layer made of AlGaInN quaternary nitride layer containing Al and a quantum well layer made of InGaN.
  • the active layer 112 of the multi-quantum well structure can suppress spontaneous polarization due to stress and deformation occurring.
  • the second conductive nitride semiconductor layer 113 is, for example, a first layer of p-type AlGaN (not shown) doped with Mg with a p-type dopant, and a second layer (not shown) consisting of p-type GaN doped with Mg. C) may have a laminated structure formed alternately.
  • the second conductivity type nitride semiconductor layer 113 may act as a carrier limiting layer like the first conductivity type nitride semiconductor layer 111.
  • the first bonding pad 120 and the second bonding pad 130 are formed on the first conductivity type nitride semiconductor layer 111 and the second conductivity type nitride semiconductor layer 113, respectively.
  • the first bonding pad 120 and the second bonding pad 130 may be formed by any one method selected from electron beam (E-Beam) deposition, thermal evaporation, sputtering deposition, and the like. Can be.
  • the first bonding pad 120 and the second bonding pad 130 may be formed of the same material by using the same mask.
  • the first bonding pad 120 and the second bonding pad 130 may be formed of a material selected from Au, Cr-Au alloy, and the like.
  • the reflective insulating layer 140 is formed on at least one region of the light emitting structure 115, the first bonding pad 120, and the second bonding pad 130.
  • the reflective insulating layer 140 electrically insulates the anode and the cathode and reflects light emitted from the active layer 112 of the light emitting structure 115 in the vertical direction.
  • the reflective insulating layer 150 serves to protect the light emitting structure 115, the first bonding pad 120, and the second bonding pad 130, and the scattered light emitted from the light emitting structure 115 and scattered. It reflects in the vertical direction.
  • the reflective insulating layer 140 may be at least one selected from a metal layer, a metal oxide, a metal nitride, and a distributed bragg reflector (DBR) layer.
  • the reflective insulating layer 140 may be formed of at least one selected from a compound and a mixture containing Si, Mg, Ti, Al, Zn, C, In, Sn, and any one of oxides, fluorides, sulfides, or nitrides thereof. It can be used to choose one.
  • the reflective insulating layer 140 may be formed of a multilayer, and may be utilized as either a distributed bragg reflector (DBR) layer or an omni directional reflector (ODR) layer.
  • DBR distributed bragg reflector
  • ODR omni directional reflector
  • the reflective insulating layer 140 includes a plurality of layers having different refractive indices.
  • Si, Ti, Ta, V, Cr, Mg, Al, Zn, In, Sn, C is applied to the DBR layer may be made of at least one selected from a compound, a mixture, an oxide and a nitride, the fluoride, It can be used in the form of either sulfide or nitride.
  • the reflective insulating layer 140 when used as the ODR, it is preferable to form four layers. It is preferable to use a dielectric thin film having a low first refractive index for the ODR single layer.
  • the ODR 1 layer may be formed of at least one selected from Si, Ti, Mg, Al, Zn, In, Sn, and C, a compound, a mixture, an oxide, and a nitride, and any one of fluoride, sulfide, and nitride. You can select and use. In the case where the double oxide and fluoride forms are used for the ODR, it is preferable to form four layers.
  • the ODR 1 layer is characterized by using a dielectric thin film having a low first refractive index.
  • the ODR 1 layer may be formed of at least one selected from Si, Ti, Mg, Al, Zn, In, Sn, and C, a compound, a mixture, an oxide, and a nitride, and any one of fluoride, sulfide, and nitride. You can select and use. Preferred forms of double oxides and fluorides are preferred.
  • the thickness may be 10-5,000 mm 3, with a preferred thickness of 10-1,000 mm 3.
  • the ODR 2 layer serves to reflect the emitted light like the first layer.
  • the material of the ODR two layer may be at least one selected from Ag, Al, Pt, Ru, Rh, and Pd, or at least one selected from compounds, mixtures, oxides, and nitrides thereof.
  • the thickness of the ODR 2 layer is preferably 1,000 to 10,000 kPa, more preferably 1,000 to 5,000 kPa.
  • the ODR three layer prevents oxidation of the second layer and electrically insulates it.
  • the ODR three layer may be formed of at least one selected from Si, Ti, Mg, Al, Zn, In, Sn, and C, a compound, a mixture, an oxide, and a nitride, and any one of fluoride, sulfide, and nitride thereof. Can be used as Of these, any one of oxide, nitride and fluoride is better.
  • the ODR three layer is preferably 100 ⁇ 20,000 ⁇ , more preferably 1,000 ⁇ 20,000 ⁇ .
  • the ODR 4 layer attaches the ODR 3 layer and the first and second bonding pads 120 and 130, and may be omitted in some cases.
  • the material of the ODR four layer may be at least one selected from Ti, Ni, Cr, Co, Fe, Hf, Pd, Zr, Pt, and Y, or at least one selected from compounds, mixtures, oxides, and nitrides thereof.
  • the thickness of the fourth layer is preferably 1 to 2,000 kPa, more preferably 500 kPa or less.
  • the lead frame 150 is disposed to face the first bonding pad 120 and the second bonding pad 130 and includes at least one first trench T1.
  • As the material of the lead frame 150 at least one metal selected from copper (Cu), nickel (Ni), chromium (Cr), molybdenum (Mo), tungsten (W), and the like may be used.
  • the first trench T1 prevents the conductive paste 160 applied between the first and second bonding pads 120 and 130 and the lead frame 150 from flowing down while being melted during reflow. In this case, the adhesion between the reflective insulating layer 140 and the lead frame 150 may be improved.
  • the first trench T1 preferably has a thickness of 1 to 95% of the entire thickness of the lead frame 150. When the thickness of the first trench T1 is less than 1% of the total thickness of the lead frame 150, it may be difficult to properly exhibit the above effect because the space in which the conductive paste 160 is filled becomes narrow. On the contrary, when the thickness of the first trench T1 exceeds 95% of the overall thickness of the lead frame 150, the excessively large area design may act as a factor of lowering the electrical conductivity of the lead frame 150.
  • the conductive paste 160 is formed between the reflective insulating layer 140 and the lead frame 150 to electrically bond the first and second bonding pads 120 and 130 to the lead frame 150.
  • the conductive paste 160 is filled between the reflective insulating layer 140 and the lead frame 150 and between the reflective insulating layer 140 and the first trench T1, respectively.
  • a metal wire is mounted.
  • FIG. 2 is an enlarged view of a portion of FIG. 1.
  • the light emitting device 100 having improved reliability may further include a transparent conductive layer 116, a reflective layer 117, and a first metal diffusion barrier layer 118.
  • the transparent conductive layer 116 is formed on the light emitting structure 115.
  • the transparent conductive layer 116 is made of a transparent and conductive material, and may include a metal.
  • the transparent conductive layer 116 may be a composite layer of nickel (Ni) and gold (Au).
  • the transparent conductive layer 116 may include an oxide, and for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), aluminum zinc oxide (AZO), or IAZO Indium Aluminum Zinc Oxide (GZO), Gallium Zinc Oxide (GZO), Indium Gallium Oxide (IGO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Aluminum Tin Oxide (ATO), Indium Tungsten Oxide (IGWO), Consisting of at least one material selected from Cupper Indium Oxide (CIO), Magnesium Indium Oxide (MIO), MgO, ZnO, In 2 O 3 , TiTaO 2 , TiNbO 2 , TiOx, RuOx and IrOx, or a composite layer thereof Can be.
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • IZTO indium zinc tin oxide
  • AZO aluminum zinc oxide
  • the reflective layer 117 is formed on the transparent conductive layer 116.
  • the reflective layer 117 is made of a metal having high light reflectivity, and specifically, may be made of any one selected from Ag, Al, Au, Pd, Pt, Ru, and Rh, or an alloy thereof, or may be stacked. More specifically, the reflective layer 117 may include a light reflective layer (not shown) and a metal oxidation layer (not shown). That is, the reflective layer 117 preferably uses a multi-layered metal layer in which a light reflective layer made of Ag material and a metal oxide layer made of Ni are sequentially stacked.
  • the reflective layer 117 may have a thickness of 500 to 5000 kPa, and more preferably 1500 to 3500 kPa.
  • the flip light emitting device Ag having a high reflectance is mainly used as a material of the reflective layer 117. Since the work function of Ag is lower than 5 eV or less, adhesion with the second conductivity type nitride semiconductor layer 113 is not performed properly. Accordingly, in the present invention, the transparent conductive layer 116 between the second conductive nitride semiconductor layer 113 and the reflective layer 117 for the purpose of increasing the adhesion between the reflective layer 117 and the second conductive nitride semiconductor layer 113. ) was applied.
  • the transparent conductive layer 116 when the transparent conductive layer 116 is inserted between the second conductivity type nitride semiconductor layer 113 and the reflective layer 117, the transparent conductive layer 116 is firmly attached to the second conductivity type nitride semiconductor layer 113. By attaching, it is possible to improve the forward voltage (Vf) and optical power (PO) characteristics.
  • Vf forward voltage
  • PO optical power
  • the first metal diffusion barrier layer 118 is formed on the reflective layer 117.
  • a multilayer metal layer including at least one selected from one or two or more compounds selected from Cr, Ni, Pt, Ti, Au, Cu, and W.
  • the first metal diffusion barrier layer 118 is fused with the respective materials at the interface between the reflective layer 117 and the first and second bonding pads 120 and 130, so that the characteristics of the reflective layer 117, in particular, reflectance and contact resistance, are improved. It serves to prevent deterioration.
  • the first metal diffusion barrier layer 118 may further include a first adhesive metal layer (not shown) formed on each of the upper and lower portions. It is preferable to use a metal layer containing Cr or Ti as the material of the first adhesive metal layer.
  • the first adhesive metal layer disposed on the first metal diffusion barrier layer 118 is formed for the purpose of improving the adhesion between the first metal diffusion barrier layer 118 and the reflective layer 117, and the first metal diffusion layer.
  • the first adhesive metal layer disposed under the barrier layer 118 is formed for the purpose of improving adhesion between the first metal diffusion barrier layer 118 and the first and second bonding pads 120 and 130.
  • each of the first and second bonding pads 120 and 130 may have an upper adhesive metal layer (not shown), a second metal diffusion barrier layer (not shown), and a lower adhesive metal layer (not shown). It may include. At this time, it is preferable that each of the upper adhesive metal layer and the lower adhesive metal layer uses a metal layer containing Ti or Au.
  • the upper adhesive metal layer is formed to improve the adhesion between the first and second bonding pads 120 and 130 and the first metal diffusion barrier layer 118, and the lower adhesive metal layer is the first and second bonding pads 120. , 130) and the first and second bumps (not shown) or the external electrode terminals 150.
  • the second metal diffusion barrier layer it is preferable to use a multilayer metal layer including at least one selected from one or two or more compounds selected from Cr, Ni, Pt, Ti, Au, Cu, and W. This is to prevent the contact resistance from being lowered due to the melting of the respective materials at the interface between the second bonding pads 120 and 130 and the first metal diffusion barrier layer 118.
  • FIG. 3 is an enlarged view of an example of the reflective insulating layer, the lead frame, and the conductive paste of FIG. 1.
  • the reflective insulating layer 140 may include a second trench T2 at a position corresponding to the first trench T1 of the lead frame 150.
  • the second trench T2 preferably has a thickness of 5 to 90% of the total thickness of the reflective insulating layer 140.
  • the thickness of the second trench T2 is less than 5% of the total thickness of the reflective insulating layer 140, the space where the conductive paste 160 is filled becomes narrow, so that it may be difficult to properly exhibit the above effects.
  • the thickness of the second trench T2 exceeds 90% of the total thickness of the reflective insulating layer 140, when the error of the process tolerance occurs, the light emitting structure 115 may be damaged.
  • the thickness of the light emitting device may increase.
  • Each of the first and second trenches T1 and T2 may have first and second uneven patterns 142 and 152 disposed on a bottom surface thereof.
  • the first and second uneven patterns 142 and 152 may be formed by performing a texturing process. This texturing treatment can be formed by performing a dry etching or wet etching process.
  • first and second concave-convex patterns 142 and 152 are formed by texturing the bottom surfaces of the first and second trenches T1 and T2 arranged to correspond to positions facing each other. Due to the expansion of the surface area of each bottom surface by the first and second uneven patterns 142 and 152, the adhesion between the reflective insulating layer 140 and the lead frame 150 may be improved to stably secure the reliability of the device. Can be.
  • the light emitting device having improved reliability according to the first embodiment of the present invention described above is first bonded by a reflective insulating layer formed to cover a light emitting structure, a first bonding pad, and a second bonding pad attached to the lead frame in a flip type. Not only the pad and the second bonding pad can be stably insulated, but also light scattered by the reflective insulating layer disposed on the bottom surface can be reflected in the vertical direction, thereby increasing the reflectance to improve light extraction efficiency.
  • the light emitting device having improved reliability may include a second trench in which a portion of the reflective insulating layer is removed and a first trench in which a portion of the lead frame disposed at a position corresponding to the second trench is removed.
  • the circuit board By designing the circuit board, the conductive paste applied between the first and second bonding pads and the lead frame can be prevented from flowing down in the process of melting during reflow, thereby preventing short circuits between the lead frames in adjacent positions.
  • the reliability of the device can be stably secured by improving the adhesion between the reflective insulating layer and the lead frame.
  • the light emitting device having improved reliability according to the first embodiment of the present invention is mounted in a flip type by mounting the light emitting structure, the first bonding pad, and the second bonding pad via a conductive paste, compared with the conventional method using a metal wire.
  • the electrical connection path is shortened, the response speed is increased, and thus it can be utilized for high speed operation to apply a high current.
  • FIG. 4 is a cross-sectional view illustrating a light emitting device having improved reliability according to the second embodiment of the present invention.
  • the light emitting device 200 having improved reliability according to the second embodiment of the present invention includes a light emitting structure 215, a first bonding pad 220, a second bonding pad 230, and reflective insulation.
  • the first embodiment may be implemented. Substantially the same as the examples, duplicate explanations are omitted and only the differences are explained.
  • the lead frame 250 has at least one paste discharge hole H. That is, in the light emitting device 200 having improved reliability according to the second embodiment of the present invention, the paste discharge hole H corresponding to the component corresponding to the first trench T1 of the lead frame 250 may be formed. In this regard, the light emitting device has improved reliability according to the first embodiment.
  • At least one paste discharge hole H is formed to penetrate the lead frame 250.
  • the paste discharge hole H serves to guide the conductive paste 260 interposed between the reflective insulating layer 240 and the lead frame 250 to be easily discharged to the outside.
  • Each of the paste discharge holes H is preferably designed to have a minimum diameter of 0.5 ⁇ m or less and a maximum diameter of 50% of the total size of the light emitting device.
  • the diameter of the paste discharge hole H is less than 0.5 ⁇ m, it may be difficult to easily discharge the remaining amount of the conductive paste 260 to the outside of the lead frame 250 because the diameter is too narrow.
  • the diameter of the paste discharge hole H exceeds 50% of the diameter of the entire light emitting device, it may not be preferable because it may act as a factor of increasing the manufacturing cost due to excessive discharge of the conductive paste 260. .
  • the paste discharge hole H may be formed on the outside spaced apart from the first and second bonding pads 220 and 230, respectively. As described above, when the paste discharge hole H is formed to penetrate the lead frame 250 at positions spaced apart from the inside and the outside of the first and second bonding pads 220 and 230, respectively, the lead frame at the adjacent position ( 250 may be more effectively prevented from being short-circuited with each other.
  • first bonding pad 220 and the second bonding pad 230 may be electrically connected to the lead frame 250 using eutectic bonding or soldering bonding, respectively.
  • first and second alloys made of at least two or more alloys of Cr, Ti, Pt, Au, Mo, Sn, for example, Au / Sn, Pt / Au / Sn, Cr / Au / Sn, and the like.
  • Electrical bumps are made by the bumps 270 and 275.
  • the first and second bumps 270 and 275 it is more preferable to use a metal layer including at least one selected from one or two or more compounds selected from Au and Sn.
  • alloys such as Sn, Ag, and Cu may be used.
  • AuSn alloy, NiSn alloy, AgSn alloy is preferable. Therefore, since the first and second bonding pads 220 and 230 of the present invention can be not only soldered but also eutectic bonded, any one of the two methods can be freely selected and mounted.
  • the conductive paste interposed between the reflective insulating layer and the lead frame can be more easily discharged to the outside by the design of the paste discharge hole formed to penetrate the lead frame. Therefore, there is an advantage in that the lead frames of adjacent positions can be prevented from being shorted.

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un dispositif électroluminescent à fiabilité améliorée, pouvant permettre une isolation stable d'une structure électroluminescente, d'un premier plot de contact et d'un second plot de contact fixés en configuration puce retournée et maximiser l'efficacité d'extraction de lumière en raison d'un accroissement de réflectivité causé par l'introduction d'une couche isolante réfléchissante pour réfléchir la lumière diffusée au niveau de la surface inférieure dans la direction verticale.
PCT/KR2014/010917 2013-12-30 2014-11-13 Dispositif électroluminescent à fiabilité améliorée WO2015102225A1 (fr)

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KR10-2013-0167545 2013-12-30
KR1020130167545A KR20150078296A (ko) 2013-12-30 2013-12-30 신뢰성이 향상된 발광 소자

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10861834B2 (en) 2018-03-08 2020-12-08 Kunshan New Flat Panel Display Technology Center Co., Ltd. Micro-LED chips, display screens and methods of manufacturing the same

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102401828B1 (ko) * 2015-07-24 2022-05-25 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지
KR102523240B1 (ko) * 2015-09-01 2023-04-19 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지
CN107170857A (zh) * 2017-04-25 2017-09-15 淮安澳洋顺昌光电技术有限公司 Led倒装芯片的制备方法
EP3627638B1 (fr) 2017-05-19 2023-01-04 Suzhou Lekin Semiconductor Co., Ltd. Diode laser
US10672954B2 (en) 2017-09-01 2020-06-02 Lg Innotek Co., Ltd. Light emitting device package
KR102393035B1 (ko) * 2017-09-01 2022-05-02 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지
CN110246931B (zh) * 2018-03-08 2021-03-26 成都辰显光电有限公司 一种Micro-LED芯片、显示屏及制备方法
KR102115189B1 (ko) * 2018-11-09 2020-05-26 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070095089A (ko) * 2006-03-20 2007-09-28 한국광기술원 절연체 반사면을 구비하는 플립칩 발광소자
US20090321778A1 (en) * 2008-06-30 2009-12-31 Advanced Optoelectronic Technology, Inc. Flip-chip light emitting diode and method for fabricating the same
JP2011222830A (ja) * 2010-04-12 2011-11-04 Sony Chemical & Information Device Corp 発光装置の製造方法
US20130292719A1 (en) * 2012-05-04 2013-11-07 Chi Mei Lighting Technology Corp. Light-emitting diode structure and method for manufacturing the same
JP2013232541A (ja) * 2012-04-27 2013-11-14 Toyoda Gosei Co Ltd 半導体発光素子

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070095089A (ko) * 2006-03-20 2007-09-28 한국광기술원 절연체 반사면을 구비하는 플립칩 발광소자
US20090321778A1 (en) * 2008-06-30 2009-12-31 Advanced Optoelectronic Technology, Inc. Flip-chip light emitting diode and method for fabricating the same
JP2011222830A (ja) * 2010-04-12 2011-11-04 Sony Chemical & Information Device Corp 発光装置の製造方法
JP2013232541A (ja) * 2012-04-27 2013-11-14 Toyoda Gosei Co Ltd 半導体発光素子
US20130292719A1 (en) * 2012-05-04 2013-11-07 Chi Mei Lighting Technology Corp. Light-emitting diode structure and method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10861834B2 (en) 2018-03-08 2020-12-08 Kunshan New Flat Panel Display Technology Center Co., Ltd. Micro-LED chips, display screens and methods of manufacturing the same

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