WO2015102183A1 - Pièce en silicium monocristallin pour dispositif de traitement au plasma à durabilité améliorée, et son procédé de production - Google Patents

Pièce en silicium monocristallin pour dispositif de traitement au plasma à durabilité améliorée, et son procédé de production Download PDF

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WO2015102183A1
WO2015102183A1 PCT/KR2014/005687 KR2014005687W WO2015102183A1 WO 2015102183 A1 WO2015102183 A1 WO 2015102183A1 KR 2014005687 W KR2014005687 W KR 2014005687W WO 2015102183 A1 WO2015102183 A1 WO 2015102183A1
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silicon
single crystal
ring
electrode plate
manufacturing
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PCT/KR2014/005687
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English (en)
Korean (ko)
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박진경
김용욱
이주언
이병익
최왕기
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하나머티리얼즈(주)
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Definitions

  • the present invention relates to a single crystal silicon component used in a plasma processing apparatus and a manufacturing method thereof, and more particularly to a single crystal silicon component used for manufacturing a silicon ring or a silicon electrode plate used in a plasma processing apparatus and a manufacturing method thereof.
  • the present invention by changing the crystal orientation of the single crystal silicon used as a component in the plasma processing apparatus, it is possible to increase the service life and durability of the plasma processing apparatus, And it is an object of the present invention to provide a single crystal silicon component having an effect of reducing component usage.
  • the single crystal silicon component used in the plasma processing apparatus provided in the present invention is different from conventional monocrystalline silicon in that the crystal growth direction is changed, so that durability during use is increased and service life is increased, There is an advantage that process yield is increased because impurities are not generated when the electrode is processed and used in the form of a silicon ring or a silicon electrode plate.
  • a semiconductor device is formed by forming a semiconductor film, a conductive film, or an insulating film on a semiconductor substrate, and repeating etching and deposition processes according to the design structure of the semiconductor device.
  • Plasma equipment used in the thin film forming process and etching process in the manufacturing process of semiconductor devices is an essential core equipment and widely used in semiconductor manufacturing processes.
  • a semiconductor substrate having a thin film deposited thereon is loaded into a plasma etching chamber, a reactive gas is supplied to the etching chamber, a high frequency power is applied to the etching chamber, Let the reaction gas be in a plasma state.
  • the deposited thin film on the semiconductor substrate is etched by the reactive gas in the plasma state.
  • the unetched barrier layer selectively on the thin film by the reactive gas in the plasma state, the deposited thin film can be etched in a desired shape and structure.
  • the plasma processing apparatus used in the plasma etching process includes a lower electrode on which a wafer is placed, a focus ring provided on an edge region of the wafer, and an upper electrode provided on the upper side of the lower electrode and having a showerhead function.
  • the parts such as the focus ring and the upper electrode are generally fabricated using single crystal silicon.
  • Single crystal silicon having a crystal growth direction [100] is generally used. This is because the direction of the single crystal of the silicon wafer used in the semiconductor manufacturing process is generally [100], and since it is most widely used and its physical properties and characteristics are well known, Only silicon parts have been used.
  • single crystal silicon can be produced by growing an ingot by various fabrication methods such as a floatzone (FZ) method and a Czochralski (CZ) method.
  • FZ floatzone
  • CZ Czochralski
  • a raw material including polysilicon is placed in a quartz crucible and heated to melt the polycrystalline silicon.
  • a single crystal seed is brought into contact with the central portion of the melt surface, and the seed is slowly lifted to grow a silicon single crystal ingot.
  • a single-crystal silicon ingot grown in the [100] direction is cut to form a circular silicon plate, a center hole is formed in the center of the circular silicon plate, After grinding the surface of the silicon ring by using a rotary grinder or the like, one surface of the silicon ring is polished through the single-leaf cross-sectional polishing.
  • a plurality of through-holes are uniformly formed in a circular silicon plate, a silicon plate is ground by a grinder or the like, and then one surface exposed when installed in the plasma processing apparatus is polished .
  • Japanese Patent Application No. 0918076 discloses a method of reducing grinding wheel marks generated on the surface of a silicon plate and a silicon electrode plate using at least two grinding processes to further improve surface flatness and reduce internal damage, And the effect of preventing particle generation during processing is proposed.
  • Japanese Patent No. 0922620 discloses a method of stabilizing the resistance of a single crystal silicon plate by performing a multi-step heat treatment process after a planarization step of processing a silicon ring or a silicon plate used in a plasma processing apparatus.
  • the double side polishing process is used to simultaneously polish both sides of the single crystal silicon plate, thereby improving the productivity of the polishing process and improving the surface flatness, so that the particle source So that the reliability of the plasma process can be improved.
  • both the silicon ring and the silicon electrode plate which are parts for the plasma processing equipment disclosed in the above registered patents, use single crystal silicon having a crystal growth direction of [100], and the production of parts for improving the yield of the plasma process and improving the lifetime of the silicon component There is still a limit to the improvement method in the process.
  • the present invention relates to a single crystal silicon component used in a plasma processing apparatus and a method of manufacturing the same. More particularly, the present invention relates to a single crystal silicon component used for manufacturing a silicon ring or a silicon electrode plate used in a plasma processing apparatus, Thereby reducing the cost and improving the semiconductor process yield.
  • the present invention uses monocrystalline silicon in which a single crystal silicon material used for manufacturing a single crystal silicon component used in a plasma processing apparatus is crystal-grown in the [111] direction, The service life and durability are increased and components replacement cycle is increased as compared with the parts using single crystal silicon grown in the crystal orientation in the [100] direction, thereby reducing the maintenance cost of the plasma equipment and the parts usage.
  • the single crystal silicon component used in the plasma processing apparatus provided in the present invention is different from conventional monocrystalline silicon in that the crystal growth direction is changed, so that durability during use is increased and service life is increased, Impurities are not generated when used in the form of a silicon ring or a silicon electrode plate in the process of the present invention, so that the process yield can be improved.
  • the present invention provides a method of manufacturing a single crystal silicon component for a plasma device having improved durability, comprising: preparing a single crystal silicon ingot having a crystal orientation of [111]; A coring step of fabricating a silicon cylinder and hollow cylinder from the silicon ingot; A slicing step of cutting the silicon cylinder manufactured through the coring step to form a silicon plate, cutting the hollow silicon cylinder to form a hollow silicon ring therein; A multistage grinding step of smoothing a surface of the silicon plate and the silicon ring manufactured in the slicing step; Forming a plurality of through holes in the silicon plate to produce a silicon electrode plate and forming a stepped step inside the silicon ring to produce a silicon ring member; A wet etching step of alkali or acid solution to remove micro-damage in the manufacturing process of the silicon electrode plate and the silicon ring; A heat treatment step of removing impurities present inside the silicon electrode plate and the silicon ring; And a surface polishing step of mirror
  • the step of preparing a single crystal silicon ingot having a crystal orientation of [111] includes arranging a direction of a growth seed in a [111] direction in the step of manufacturing a silicon ingot through silicon single crystal growth, A crystal growth step of growing silicon in a [111] direction; And a step of removing a part of both ends of the single crystal silicon ingot grown in the [111] direction.
  • the step of preparing a single crystal silicon ingot having a crystal orientation of [111] comprises: (1) fixing a silicon ingot grown in the [100] direction with a magnetic block, To produce a plurality of silicon discs in the [111] crystal direction, and then laminating the silicon discs in the [111] crystal direction and wax-bonding them.
  • the silicon ingot grown in the [100] direction is fixed to a precision automatic rotation table, An angle sensor can be used to precisely control the angle of rotation so that the plane to be cut later becomes the [111] direction.
  • it may further include, after the heat treatment step, a further cleaning step using hydrofluoric acid to remove the oxide film formed on the surface of the silicon electrode plate and the silicon ring have.
  • the multi-stage grinding step may include a primary grinding step and a secondary grinding step with a lower roughness, a higher rotation speed and a lower pressure than the primary grinding step, And a multistage heat treatment process which proceeds in a mixed gas atmosphere or in a mixed atmosphere of nitrogen and inert gas and proceeds at least at a first temperature for a first time and then for a second time at a second temperature.
  • the surface polishing step is performed by a double polishing step of simultaneously polishing the upper surface and the lower surface of the silicon electrode plate and the silicon ring.
  • a plurality of carriers are provided between the upper polishing pad portion and the lower polishing pad portion, And the silicon electrode plate or the silicon ring is fixed to each of the carriers so that the mirror polishing proceeds.
  • Another embodiment of the present invention includes a monocrystalline silicon focus ring and a monocrystalline silicon focus ring for a plasma processing apparatus having improved durability of a monocrystalline silicon material having a [111] crystal orientation, which is produced by the above-described method for producing a silicon part.
  • another embodiment of the present invention is a manufacturing method of a silicon part, comprising: a single crystal silicon upper electrode for a plasma processing apparatus having a [111] crystal orientation and having improved durability of a single crystal silicon material, And a plasma processing apparatus.
  • the single crystal silicon electrode of the [111] direction and the single crystal silicon ring of the [111] direction manufactured by the method for producing a silicon part of the present invention have an increased service life and durability compared to the conventional single crystal silicon component of the [100] ,
  • the parts replacement cycle is increased, and the maintenance cost of the plasma equipment and the parts usage amount can be reduced.
  • the single crystal silicon component used in the plasma processing apparatus provided in the present invention is different from conventional monocrystalline silicon in that the crystal growth direction is changed, so that durability during use is increased and service life is increased, There is an advantage that process yield is increased because impurities are not generated when the electrode is processed and used in the form of a silicon ring or a silicon electrode plate.
  • the single crystal silicon part manufactured by the method of the present invention can prevent the generation of particles during the plasma processing, thereby improving the reliability of the semiconductor element, The process yield can be improved.
  • FIG. 1 is a flowchart illustrating a method of manufacturing a silicon part according to an embodiment of the present invention.
  • FIGS. 2 and 3 schematically show a method for producing single crystal silicon having a [111] crystal orientation by using single crystal silicon grown in the [100] direction.
  • FIG. 4 is a schematic view showing a process of manufacturing the single crystal silicon focus ring and the single crystal silicon upper electrode of the present invention.
  • FIG. 5 is a diagram illustrating a multi-stage grinding apparatus used in the present invention.
  • FIG. 6 is a diagram illustrating the lower side of the double side polishing equipment used in the present invention.
  • FIG. 7 is a diagram schematically showing a plasma processing apparatus equipped with a single-crystal silicon focus ring and a single-crystal silicon upper electrode manufactured by the method of the present invention.
  • FIG. 1 is a process flow chart for explaining a method of manufacturing a silicon part according to an embodiment of the present invention
  • FIGS. 2 to 9 are reference drawings for explaining a method of manufacturing a silicon material according to an embodiment of the present invention .
  • the present invention will be described in detail with reference to the flow chart of FIG. 1 with reference to FIGS. 2 to 9.
  • [100] and [111] directions exist in the crystal direction of the single crystal silicon.
  • the [111] plane of the single crystal silicon has a lower surface energy and higher atom density and effective bonding density than the [100] plane. Therefore, in the present invention, attention is focused on the feature of the [111] crystal direction and the main technical feature is to change the material of the single crystal silicon used in the parts of the plasma processing apparatus.
  • a manufacturing method of removing a sliding potential is known as a method of manufacturing a single crystal silicon ingot grown to have a crystal plane in the [100] or [111] direction. That is, when pulling the seed crystal so that the crystal orientation coincides with the axis direction of the crystal axis, the seed crystal is subjected to a necking treatment in which the diameter of the single crystal silicon is gradually reduced after the seed crystal is melted in the melt, Can be removed.
  • a raw material including polycrystalline silicon is placed in a quartz crucible, and the polycrystalline silicon is melted by heating at a temperature of 1400 to 1500 ° C.
  • a single crystal seed having the same crystal orientation as the target crystal direction is brought into contact with the central portion of the melt surface, and then the seed is slowly lifted to grow a silicon single crystal ingot.
  • the seed and the quartz crucible in the opposite direction.
  • surface tension is generated between the seed and the surface of the melt so that the thin silicon films continuously stick to the seed surface And cooled at the same time.
  • the silicon atoms in the melt have crystal orientation in the same direction as the seed while the seed surface is cooled.
  • a magnetic field may be applied in order to make the flow of the melt smooth and stable, in order to increase the viscosity of the melt by applying a magnetic field to the melt, thereby suppressing convection in the melt to perform stable crystal growth
  • a raw material containing polysilicon is placed in a quartz crucible and heated at a temperature of about 1,400 to 1,500 ° C to melt the polycrystalline silicon , A single crystal seed having a crystal orientation of [111] is brought into contact with the center of the melt surface, and the seed is slowly lifted to grow a silicon single crystal ingot having a [111] crystal orientation.
  • the silicon atoms in the melt have a [111] direction which is the crystal direction in the same direction as the seed, and thus a single crystal silicon ingot having a [111] crystal direction can be produced.
  • the conventional silicon ingot crystal-grown in the [100] direction is rotated and fixed to the magnetic block 30, 10) to cut in the [111] direction, it is possible to manufacture a silicon disc 20 having an elliptical shape, which is not a conventional circular shape.
  • a single crystal silicon ingot having a [111] crystal orientation can also be produced by wax bonding the original silicon plates cut to have the [111] crystal orientation having the elliptical shape.
  • the rotated [100] silicon ingot is fixed to the [111] crystal plane by using a silicon saw 10 including an abrasive after fixing the rotated angle by using the magnetic block 30
  • the precision automatic rotation table 40 can be used, and it is preferable to control the rotation angle more precisely through the laser angle sensor 50 (see FIG. 3).
  • a single crystal silicon ingot having a [111] crystal orientation prepared in this way may be cored to form a hollow silicon cylinder and a silicon cylinder and then cut to form a silicon focus ring or a silicon plate.
  • a silicon ingot The silicon plate may be cut to form the silicon plate, and then the silicon focus ring or the silicon electrode plate may be formed.
  • the former method will be described as an example.
  • a large-diameter single-crystal silicon ingot of 8 inches or more having a [111] crystal orientation is prepared (S110), and an unnecessary portion of the upper and lower portions of the single crystal ingot is cut through a cropping process, A silicon cylinder 120b having an inner space as shown in FIG. 4 is manufactured, and a silicon cylinder 120c is formed as shown in FIG. (S120).
  • a method of manufacturing a silicon cylinder 120b having an empty portion for producing a silicon ring and a silicon cylinder 120c for manufacturing a silicon electrode plate by coring a single crystal silicon ingot in the [111] direction This will be described in detail.
  • the silicon cylinder 120c can be used as a material for the silicon upper electrode 230 and by re-coring the silicon cylinder 120c, the silicon cylinder and the silicon cylinder with an empty interior for manufacturing a silicon ring can be remanufactured It is possible. That is, it is also possible to repetitively produce a silicon cylinder and a silicon-centered cylinder having a small size by repeatedly coring the silicon-centered cylinder as necessary.
  • the diameter of the silicon cylinder 120c and the inner diameter of the silicon cylinder 120b manufactured through the coring process are adjusted according to the dimensions of the silicon component to be manufactured.
  • the inner diameter of the silicon cylinder is preferably 0.90 to 0.99. This is because the inner diameter may increase when the subsequent grinding process and the inner diameter polishing process are performed. If it is out of the above range, it may be difficult to control the process conditions of the grinding process and the polishing process.
  • the coring may be performed from the top surface to the bottom surface of the silicon ingot at one time, or may be performed at a time from the top surface of the silicon ingot to the bottom surface of the silicon ingot ,
  • the silicon ingot may be inverted to perform the secondary coring in the direction from the lower surface to the upper surface. Further, after the coring step, it is preferable to carry out a cleaning step to remove particles and foreign substances generated in the coring step.
  • the silicon cylinder 120b having a hollow center at its center is sliced to prepare a silicon ring 130 having a center at the center and the silicon cylinder 120c is sliced to produce a silicon plate 140 (S131 and S132)
  • the silicon ring 130 and the silicon plate 140 are manufactured by cutting the silicon cylinder 120b and the silicon cylinder 120c to a thin thickness by a sawing process using a wire or a diamond cutting process,
  • the thicknesses of the silicon ring 130 and the silicon electrode plate 160 can be adjusted in various manners, so that a silicon focus ring and a silicon electrode of various products can be manufactured. That is, not only the silicon ring 130 and the silicon electrode plate 160 of the same thickness can be manufactured in the single silicon ingot 120 but also the silicon ring 130 and the silicon electrode plate 160 of the same thickness can be manufactured by changing the process parameters in the manufacturing process including the slicing step, (130) and the silicon electrode plate (160).
  • the grinding process includes a rotatable table 70, at least three stages 71, 72, and 73 that are provided on the table and can rotate and fix the silicon ring 130 or the silicon plate 140, And at least two grinding wheels 74 and 75 for grinding the silicon ring 130 or the silicon plate 140 fixed on at least two of the stages to different roughnesses.
  • the table is rotatable in the clockwise direction, for example, and is preferably formed in a circular shape.
  • the plurality of stages are provided on the table at equal intervals from each other, and are preferably rotated clockwise.
  • the plurality of stages may be provided with a concave portion formed in a circular shape on a table, and may be provided with a protrusion formed in a circular shape.
  • the plurality of stages may include a relatively rough first grinding process and a relatively fine second grinding process using a grinding wheel rotating clockwise after the silicon ring 130 or the silicon plate 140 for carrying out the grinding process is loaded, And the unloading of the silicon ring 130 or the silicon plate 140 after the grinding process is completed.
  • a plurality of vacuum holes may be formed in each of the plurality of stages, or a porous chuck may be used. After the silicon ring or the silicon plate 140 is loaded on the stage through the vacuum hole, the air between the silicon ring 130 or the silicon plate 140 and the stage is vacuumed by the vacuum pump (not shown) The silicon ring 130 or the silicon plate 140 is vacuum-fixed on the stage.
  • the vacuum hole is formed only in the portion corresponding to the silicon ring 130.
  • the silicon ring 130 or the silicon plate 140 having various sizes can be fixed in a vacuum.
  • the vacuum hole can be fixed by various methods such as mechanical method as well as vacuum fixing.
  • each of the grinding wheels 74 and 75 is provided so as to be in only a partial contact with the stages 72 and 73 and to have a slight inclination.
  • the grinding wheels 74 and 75 may be installed so that the grinding wheels 74 and 75 are in half contact with the center of the stages 72 and 73, and are inclined toward the portions in contact with the stages 72 and 73.
  • the grinding wheels 74 and 75 are provided with diameters smaller than the diameters of the stages 72 and 73 and are preferably rotated, for example, in the clockwise direction.
  • each of the grinding wheels 74 and 75 grinding members of different sizes, for example diamond segments, are provided.
  • fine diamond particles having 1000 to 3000 meshes are attached Segments are preferably provided.
  • a rough grinding process is performed by one grinding wheel 74, and a fine grinding process is performed by another grinding wheel 75.
  • the rough diamond segment has 325 mesh and the fine diamond segment has 2000 mesh.
  • coarse grinding and fine grinding can be performed by two grinding wheels 74 and 75 in one equipment.
  • Each of the grinding wheels is different in rotational speed, removal amount, and pressure, and the respective grinding conditions are as follows.
  • the grinding wheel is rotated at a speed of 2300 to 2700 rpm, and the grinding object, that is, the silicon ring 130 or the silicon plate 140 is removed to a thickness of 50 to 70 mu m.
  • the grinding object that is, the silicon ring 130 or the silicon plate 140 is removed to a thickness of 50 to 70 mu m.
  • a 4.06 mm thick silicon ring 130 or a silicon plate 140 is ground to a thickness of 4 mm.
  • the grinding wheel can be ground at a pressure of two stages. Grinding is performed at a down pressure of 90 to 120 ⁇ ⁇ / min after grinding a predetermined thickness at an initial lowering pressure of 130 to 160 ⁇ ⁇ / min. Speed. Another grinding wheel rotates at a speed of 2800 to 3200 rpm, and the grinding object is removed to a thickness of 10 to 30 mu m.
  • the primary grinding 4 mm thick silicon ring 130 or silicon plate 140 is ground to a thickness of 3.98 mm.
  • the grinding wheel is grinding at a pressure of three steps, grinding to a predetermined thickness at an initial falling pressure of 25 to 35 ⁇ m / min, grinding at a falling pressure of 15 to 20 ⁇ m / min, To grind the grinding surface.
  • the stage rotates at a speed of 100 to 130 rpm.
  • the step of grinding the grinding surface without applying pressure is performed for about 10 seconds, and after grinding, the grinding wheel is raised at a speed of 50 to 70 mu m / min for about 10 seconds.
  • the grinding conditions of the other grinding wheels can be variously modified. That is, considering the thickness of the silicon ring 130 or the silicon plate 140, the rotational speed, the removal amount, and the grinding pressure can be adjusted according to the thickness to be removed by grinding.
  • the surfaces of the upper and lower surfaces of the silicon ring 140 and the silicon ring 140 cut by the wire are planarized by at least two grinding processes using the above-described grinding equipment. That is, a wire saw mark by wire sawing is removed by a rough grinding process using a grinding wheel to improve surface flatness, and a grinding process that can be generated by a rough grinding process by a fine grinding process using a grinding wheel The grinding wheel mark is removed to reduce the surface roughness.
  • a cleaning process for removing particles and sludge generated in the grinding process can be further performed.
  • a double scrubber process or a roller type scrubber brush can be used for the cleaning process. That is, in the double scrubber process, impurities on the upper and lower surfaces of the wafer can be simultaneously removed by using a double scrubber device provided with brushes in the upper and lower areas.
  • the silicon ring member 150 is fabricated by processing the inner wall surface and / or the outer wall surface of the silicon ring 130 and the silicon electrode plate 160 having the plurality of through holes 141 (S151, S152).
  • the silicon ring member 150 may be manufactured by various types of processing processes depending on the application in which the silicon focus ring is used.
  • a part of the inner wall surface of the silicon ring 130 is removed to produce the silicon ring member 150 having the stepped step (A). That is, the silicon ring member 150 according to the present embodiment includes a through-hole having a first diameter at an inner center thereof and a groove having a second diameter larger than the first diameter at an upper side of the through-hole.
  • the present invention is not limited to this, and the silicone ring member 150 may include various patterns including extended protrusions and recessed grooves as required, by a processing step. It is preferable that the processing of the inner and outer sides of the center-free silicon ring 130 is performed through a grinding process.
  • CNC Machine Numerical Control
  • MCT Machining Center Tool
  • a plurality of through holes 141 are formed in the silicon plate 140 to regrind the outer diameter of the silicon plate 140 before forming the silicon electrode plate 160.
  • the grinding of the outer diameter of the silicon plate 140 may be performed in the step of the silicon cylinder 120c after the coring process.
  • the outer diameter of the silicon plate 140 is preferably CNC equipment.
  • the silicon plate 140 can be cleaned and the inspection can be performed. After machining the outer diameter of the silicon plate 140, the silicon plate 140 is bonded onto the substrate of the perforation equipment. That is, the silicon plate 140 is bonded onto the glass substrate for hole punching. A plurality of through holes 141 are formed through a drilling process using a drill or an ultrasonic wave.
  • the productivity can be improved and holes can be formed in the entire silicon plate 140 through the drilling process.
  • the silicon plate 140 may be divided into a plurality of regions, and then a perforation process may be performed for each region. Thereafter, a cleaning process is performed to remove particles and sludge generated in the perforation process after the perforation process, and a defect inspection of the silicon electrode plate 160 having a plurality of through holes 141 may be performed.
  • the etching step is an acidic chemical, such as alkali chemical or HNO 3 containing KOH and / or NaOH. Then, the etching step after the cleaning step is performed using SC1 (NH 4 OH + H 2 O 2 + H 2 O). In addition, it is preferable to perform a rinsing process between the etching process and the cleaning process. By this etching process and the cleaning process, the grinding wheel marks of the silicon ring member 150 or the silicon electrode plate 160 are further relaxed, do.
  • SC1 NH 4 OH + H 2 O 2 + H 2 O
  • the silicone ring member 150 and the silicon electrode plate 160 are rinsed at room temperature for about 300 seconds using deionized water, and KOH, H 2 O 2, and ultrapure water are mixed at a ratio of about 1: 1: 15
  • the mixed solution is used to perform a primary etching process at a temperature of 65 to 75 ° C for about 300 seconds.
  • the first etching solution is rinsed at a room temperature for about 300 seconds using ultrapure water, and then a secondary etching process is performed at a temperature of 60 to 70 ° C. for about 300 seconds using a 45% KOH solution.
  • the secondary etching solution was rinsed at a room temperature for about 300 seconds using ultrapure water, and the SC1 solution mixed with NH 4 OH, H 2 O 2, and H 2 O at a ratio of 1: 1: The cleaning process is performed for about 300 seconds.
  • the cleaning solution was rinsed at room temperature for about 300 seconds using ultra-pure water, and the silicone ring member 150 or the silicon electrode plate 160 was immersed in ultrapure water at 35 to 55 ° C. for about 30 seconds, The air drying process is then performed at a temperature of 70 to 90 DEG C for about 100 seconds. It is preferable that the etching process and the cleaning process are performed in a clean room where no fine dust is generated.
  • the heat treatment process may be a multi-stage heat treatment process, The heat treatment may be performed at step S170.
  • the donor killing process is a process for removing impurities, particularly oxygen, from the inside through the heat treatment of the silicon ring member 150 and the silicon electrode plate 160.
  • Various types of heat treatment apparatuses including a furnace type, an oven type or a belt type can be used as the heat treatment.
  • the heat treatment apparatus enables a precise heat treatment using a programmable mechanism capable of setting the temperature and time. It is preferable that the heat treatment temperature and the time can record the result by digital or analog etc. by a program.
  • the multistage heat treatment process is carried out in multiple steps while raising the temperature.
  • the temperature is raised in three steps. That is, the temperature is raised to a first temperature at a temperature rise rate of 1 to 100 ° C / min at room temperature, and then heat-treated for 1 to 60 minutes. Thereafter, the temperature is raised from the first temperature to the second temperature at a rate of 1 to 100 ° C / After the heat treatment is performed for 1 to 60 minutes, the temperature is increased from the second temperature to the third temperature at a rate of 1 to 100 ° C / min, and then the heat treatment is performed for 1 to 180 minutes. Then, the temperature is lowered to room temperature at a temperature lowering rate of 1 to 100 ° C / min at the third temperature.
  • the first temperature is preferably 100 to 300 ° C
  • the second temperature is preferably 300 to 500 ° C
  • the third temperature is preferably 600 to 1000 ° C.
  • the annealing process is preferably performed by supplying oxygen and an inert gas or nitrogen and an inert gas. After the annealing process, an oxide film or a nitride film is formed on the silicon ring member 150 or the silicon electrode plate 160, and the grown oxide film or nitride film is removed by grinding, wet etching or polishing using hydrogen fluoride, which can be performed later.
  • the heat treatment may be performed not only in a multistage heat treatment process but also in a high temperature heat treatment process.
  • the temperature is raised to 600 to 1000 ° C at a temperature rise rate of 1 to 100 ° C / min at room temperature and then heat treated for 1 to 180 minutes. Then, the temperature is lowered to room temperature at a temperature lowering rate of 1 to 100 ° C / min.
  • the resistances of the silicon ring member 150 and the silicon electrode plate 160 are stabilized by the donor killing process such as the multistage heat treatment process and then the resistance of the silicon ring member 150 and the silicon electrode plate 160 is measured, Laser marking is performed for the history management of the material.
  • the double side polishing process is performed to planarize both surfaces of the silicon ring member 150 and the silicon electrode plate 160 to reduce the surface roughness, thereby manufacturing the single crystal silicon focus ring 220 and the silicon upper electrode 230 (S180).
  • the polishing process can first improve the flatness of the stepped region of the silicon ring member 150 by the stepwise polishing process and maintain the surface roughness at 5 ⁇ or less. That is, the inner surface and the stepped surface (through-hole and groove region) of the silicone ring member 150 are polished, and then a cleaning process is performed. After the cleaning process, the upper and lower surfaces of the silicon ring member 150 or the silicon electrode plate 160 are simultaneously polished using a double side polishing apparatus (see FIG. 6).
  • the double side polishing equipment includes an upper polishing pad portion and a lower polishing pad portion 90.
  • the lower polishing pad portion includes a circular lower plate 91, a lower polishing pad 92 provided on the lower plate, and a plurality of carriers 93 having predetermined through holes on the lower polishing pad.
  • the silicon ring member 150 or the silicon electrode plate 140 is positioned and fixed in the through hole 94 of the carrier 93 to prevent them from escaping.
  • the upper polishing pad (not shown) and the lower plate 91 are rotated in different directions to simultaneously polish the upper surface and the lower surface of the silicon ring member 150 or the silicon electrode plate 160. It is also preferable that the plurality of carriers 93 rotate as well.
  • a plurality of through holes 94 may be formed in one carrier 93. That is, two to four through holes 94 may be formed in one carrier 93 to increase the number of the silicon ring member 150 or the silicon electrode plate 160 that performs the double side polishing process at one time.
  • the apparatus for double side polishing process can perform polishing by changing only the carrier 93 regardless of the shape, size or thickness of the silicon ring member 150 or the silicon electrode plate 160.
  • the surface roughness of the upper surface and the lower surface of the silicon ring member 150 or the silicon electrode plate 160 can be controlled by controlling the slurry and the surfactant injected during the polishing process.
  • the upper polishing pad portion (not shown) rotates counterclockwise at a rotation speed of about 10 to 20 rpm at a pressure of 0.1 to 1.0 kg / cm 2,
  • the polishing pad portion 90 rotates clockwise at a rotation speed of about 30 to 40 rpm.
  • the carrier 93 also rotates clockwise at a rotation speed of about 10 to 20 rpm.
  • the first slurry is introduced at an amount of 3 to 5 L / min and polished, and if necessary, the second slurry is introduced at an amount of 2 to 3 L / min to polish.
  • the first slurry is a slurry having a larger size of abrasive grains than the second slurry.
  • the silicon ring member 150 or the silicon electrode plate 160 is polished by polishing using the first slurry, and polishing using the second slurry The surface roughness of the silicon ring member 150 or the silicon electrode plate 160 is further improved. In addition, it is also possible to introduce the chemical after the polishing using the second slurry, which prevents particles from adhering to the surface of the silicon ring member 150 or the silicon electrode plate 160 so that the cleaning process can be completed later.
  • the double side polishing process can improve the flatness of the upper surface and the lower surface of the silicon ring member 150 or the silicon electrode plate 160 and maintain the surface roughness to 5 ⁇ or less.
  • the surface roughness can be maintained at 1 to 5 angstroms and can be maintained similar to the surface roughness of the silicon wafer of 2 angstroms. In this way, the surface roughness of the silicon ring is made similar to the surface roughness of the wafer, and the plasma uniformity on the upper side of the wafer is increased to improve the plasma processing efficiency.
  • a cleaning process is performed to remove slurry and particles.
  • a silicon focus ring according to the present embodiment is fabricated.
  • the standard of the manufactured silicon focus ring is measured, and final cleaning is performed. It is preferable to perform a 3D inspection to measure the size of the silicon focus ring.
  • visual inspection is performed after final cleaning. Visual inspection includes surface inspection and edge chipping inspection, which allows inspection of particles and deep scratches.
  • the silicon electrode according to an embodiment of the present invention is not limited to this, and when the total diameter of the silicon electrode is larger than the diameter of the silicon cylinder, the silicon electrode can be manufactured using a plurality of bodies.
  • the grinding step and the etching step and the cleaning step are performed at least two times in the above embodiment, the etching and cleaning steps may be selectively performed. This may be performed after the grinding step by etching and cleaning according to surface planarization and defect patterns Quot; can be selectively performed.
  • the donor killing process by the multi-stage heat treatment is performed after the plurality of through holes 141 are formed in the silicon ring member 150 and the silicon plate 140.
  • the silicon cylinder 120c may be cut, or may be performed after the planarization process.
  • the donor killing process by multi- After the plate is formed, after forming a center hole or a plurality of through holes in the silicon plate, or after the grinding process.
  • FIG. 7 is a diagrammatic view illustrating a plasma etching apparatus including a silicon focus ring 220 and a silicon upper electrode 230 manufactured according to a method according to an embodiment of the present invention.
  • the plasma etching apparatus includes a silicon focus ring 220 made of a silicon ring manufactured by the above-described manufacturing method, and a silicon upper electrode 230 made of a silicon electrode plate.
  • the plasma etching apparatus includes a chamber 200, a lower electrode 210 on which the wafer 201 is placed, and a lower electrode 210 on which a silicon (not shown) provided in an edge region of the wafer 201 placed on the lower electrode 210, A focus ring 220, a silicon upper electrode 230 provided on the upper side of the lower electrode 210 and integrally formed with the showerhead, first and second silicon electrodes 230 and 230 for supplying power to the lower electrode 210 and the silicon upper electrode 230, 2 power supply units 240 and 250, respectively.
  • the single crystal silicon upper electrode of the [111] direction and the silicon focus ring manufactured by the method of manufacturing a single crystal silicon component for a plasma device improved in durability according to the present invention And the etching rate difference between the silicon upper electrode and the silicon focus ring in the conventional [100] direction was observed in an actual plasma processing facility.
  • the single crystal silicon upper electrode of the [111] direction and the silicon focus ring manufactured by the above method and the silicon focus ring were attached to the [100] single crystal silicon upper electrode and the silicon focus ring plasma processing apparatus formed under the same conditions, W RF power and a 20 W BAIS condition, the etching amount of the upper silicon single crystal silicon electrode and the silicon focus ring per unit time was measured.
  • the measurement results of the etching rate per unit time of the single crystal silicon focus ring in the [111] direction and the single crystal silicon focus ring in the [100] direction according to the present invention were measured according to the following Table 1 And FIG. 8, respectively.
  • the unit of etching amount per unit time of the measured single crystal silicon focus ring is mm / hr.
  • the single crystal silicon ring and the silicon upper electrode for a plasma facility made of single crystal silicon in the [111] direction manufactured by the manufacturing method of the present invention The etching amount per unit time was reduced by about 30% as compared with the monocrystalline silicon product, and thus, the service life and durability were prolonged by at least 30%.
  • the single crystal silicon component used in the plasma processing apparatus of the present invention has a crystal growth direction different from that of monocrystal silicon widely used in the prior art, thereby increasing service life due to increase in durability during use,
  • the impurity is not generated when used in the form of a silicon focus ring or a silicon upper electrode, and thus the process yield can be improved.
  • the silicon focus ring and the silicon upper electrode manufactured according to the manufacturing method of the present embodiment are not limited to the above-described etching apparatus but may be applied to various plasma processing apparatuses, and the present invention is not limited to the above- And may be implemented in various other forms.
  • the above-described embodiments are provided so that the disclosure of the present invention is complete, and those skilled in the art will fully understand the scope of the invention, and the scope of the present invention should be understood by the appended claims .
  • 120b Silicon cylinder
  • 120c Silicon cylinder
  • the present invention relates to a single crystal silicon component used in a plasma processing apparatus and a manufacturing method thereof, and more particularly to a single crystal silicon component used for manufacturing a silicon ring or a silicon electrode plate used in a plasma processing apparatus,
  • a single crystal silicon component used for manufacturing a silicon ring or a silicon electrode plate used in a plasma processing apparatus By changing the crystal orientation of the single crystal silicon used as a component in the processing apparatus, when used in a plasma processing apparatus, it increases the service life and durability and increases the parts replacement cycle to reduce the maintenance cost of the plasma equipment and the parts usage
  • a single crystal silicon component used in a plasma processing apparatus provided in the present invention has a crystal growth direction different from that of monocrystalline silicon widely used in the prior art, Durable There is an advantage that the process yield is increased because no impurities are generated when used in the form of a silicon ring or a silicon electrode plate in a plasma processing apparatus and thus it is industrially applicable.

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  • Analytical Chemistry (AREA)
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Abstract

La présente invention concerne un procédé de production d'un matériau en silicium. Au moment de la production d'une pièce en silicium monocristallin utilisée dans un dispositif de traitement au plasma, une utilisation est faite d'un silicium monocristallin obtenu en soumettant le matériau en silicium monocristallin utilisé audit moment pour une croissance cristalline dans la direction [111], et ainsi, lorsque ladite pièce est utilisée en étant montée sur le dispositif de traitement au plasma, une augmentation de la durée de vie et de la limite d'endurance est obtenue par comparaison avec des pièces existantes utilisant du silicium monocristallin obtenu par croissance cristalline dans la direction [100], de sorte que le cycle de remplacement de pièce soit augmenté et qu'il soit possible de réduire les coûts de maintenance et de réparation ainsi que la quantité de pièces utilisées dans un équipement plasma, et qu'il soit possible d'améliorer le rendement de traitement étant donné que des impuretés ne sont pas produites lorsque la pièce selon l'invention est utilisée après usinage sous la forme d'un anneau en silicium ou d'une plaque d'électrode en silicium à l'intérieur du dispositif de traitement au plasma.
PCT/KR2014/005687 2013-12-30 2014-06-26 Pièce en silicium monocristallin pour dispositif de traitement au plasma à durabilité améliorée, et son procédé de production WO2015102183A1 (fr)

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KR101628689B1 (ko) 2016-01-29 2016-06-09 하나머티리얼즈(주) 플라즈마 처리 장치용 탄화규소 부품 및 이의 제조방법
KR102426127B1 (ko) * 2022-03-14 2022-07-27 (주)코마테크놀로지 방전가공용 전극을 이용한 곡면과 가변하는 두께를 갖는 에칭용 재생 상부전극 가공방법
KR102426136B1 (ko) * 2022-03-14 2022-07-27 (주)코마테크놀로지 방전가공용 전극을 이용한 곡면과 가변하는 두께를 갖는 에칭용 상부전극 가공방법

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KR20050006157A (ko) * 2002-04-17 2005-01-15 램 리서치 코포레이션 플라즈마 반응 챔버용 실리콘 부품
KR20060127495A (ko) * 2005-06-07 2006-12-13 주식회사 글로실 특정 면방향을 갖는 단결정실리콘을 사용한 캐소드전극 및이를 이용한 웨이퍼식각장치
KR100918076B1 (ko) * 2007-08-24 2009-09-22 하나실리콘(주) 플라즈마 처리 장치용 실리콘 소재의 제조 방법
KR100922620B1 (ko) * 2007-08-24 2009-10-21 하나실리콘(주) 플라즈마 처리 장치용 실리콘 소재의 제조 방법

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KR100867389B1 (ko) 2007-08-24 2008-11-06 하나실리콘(주) 플라즈마 처리 장치용 실리콘 소재의 제조 방법

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KR20060127495A (ko) * 2005-06-07 2006-12-13 주식회사 글로실 특정 면방향을 갖는 단결정실리콘을 사용한 캐소드전극 및이를 이용한 웨이퍼식각장치
KR100918076B1 (ko) * 2007-08-24 2009-09-22 하나실리콘(주) 플라즈마 처리 장치용 실리콘 소재의 제조 방법
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