WO2015096048A1 - 一种改善了电性能的电容器级高比容钽粉及其制备方法 - Google Patents
一种改善了电性能的电容器级高比容钽粉及其制备方法 Download PDFInfo
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- WO2015096048A1 WO2015096048A1 PCT/CN2013/090386 CN2013090386W WO2015096048A1 WO 2015096048 A1 WO2015096048 A1 WO 2015096048A1 CN 2013090386 W CN2013090386 W CN 2013090386W WO 2015096048 A1 WO2015096048 A1 WO 2015096048A1
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- Prior art keywords
- powder
- tantalum powder
- tantalum
- ball
- ratio
- Prior art date
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 99
- 239000003990 capacitor Substances 0.000 title claims description 14
- 238000002360 preparation method Methods 0.000 title description 5
- 239000000843 powder Substances 0.000 claims abstract description 89
- 238000000034 method Methods 0.000 claims abstract description 48
- 238000000498 ball milling Methods 0.000 claims abstract description 27
- 239000000203 mixture Substances 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000002156 mixing Methods 0.000 claims abstract description 8
- 238000005406 washing Methods 0.000 claims abstract description 5
- 239000002245 particle Substances 0.000 claims description 31
- 238000005054 agglomeration Methods 0.000 claims description 23
- 230000002776 aggregation Effects 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 19
- 239000007788 liquid Substances 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 238000000227 grinding Methods 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 15
- 239000011734 sodium Substances 0.000 claims description 12
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 11
- 229910052708 sodium Inorganic materials 0.000 claims description 11
- 229910001220 stainless steel Inorganic materials 0.000 claims description 10
- 239000010935 stainless steel Substances 0.000 claims description 10
- 229910000831 Steel Inorganic materials 0.000 claims description 7
- 239000010959 steel Substances 0.000 claims description 7
- 238000005554 pickling Methods 0.000 claims description 5
- 239000008187 granular material Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 238000011946 reduction process Methods 0.000 claims description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 claims 1
- 238000007873 sieving Methods 0.000 abstract description 2
- 239000002253 acid Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000000704 physical effect Effects 0.000 description 8
- -1 halogen salt Chemical class 0.000 description 7
- 238000003801 milling Methods 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 125000003158 alcohol group Chemical group 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 229910052684 Cerium Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 5
- 238000009614 chemical analysis method Methods 0.000 description 5
- 229910052712 strontium Inorganic materials 0.000 description 5
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 238000010835 comparative analysis Methods 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 206010036790 Productive cough Diseases 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 239000001508 potassium citrate Substances 0.000 description 2
- 229960002635 potassium citrate Drugs 0.000 description 2
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 description 2
- 235000011082 potassium citrates Nutrition 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 210000003802 sputum Anatomy 0.000 description 2
- 208000024794 sputum Diseases 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006392 deoxygenation reaction Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229960003975 potassium Drugs 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003304 ruthenium compounds Chemical class 0.000 description 1
- 239000011833 salt mixture Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/06—Metallic powder characterised by the shape of the particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
- B22F2009/043—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling by ball milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G2009/05—Electrodes or formation of dielectric layers thereon characterised by their structure consisting of tantalum, niobium, or sintered material; Combinations of such electrodes with solid semiconductive electrolytes, e.g. manganese dioxide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
- Y10T428/12035—Fiber, asbestos, or cellulose in or next to particulate component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12181—Composite powder [e.g., coated, etc.]
Definitions
- the present invention relates to a high specific capacitance capacitor grade tantalum powder and a high specific capacitance capacitor, and more particularly to a high specific capacitance capacitor grade tantalum powder of a sheet + block structure and an anode block prepared thereby and a high specific volume containing the anode block Capacitor. Background technique
- Metal ruthenium is a valve metal that forms a dense oxide film on the surface and has a unidirectional conductive property.
- the anodic film made of tantalum powder has stable chemical properties (especially stable in an acidic electrolyte), high resistivity (7.5 ⁇ 10 1 ⁇ « ⁇ ), large dielectric constant (27.6), and small leakage current. In addition, it has a wide operating temperature range (-80 ⁇ 200. C:), high reliability, shock resistance and long service life, so it is an ideal material for making small and reliable tantalum capacitors.
- the sodium reduction potassium citrate process is a method in which a capacitor grade is prepared by using K 2 TaF 7 and Na as main raw materials, and a halogen salt or a halogen salt mixture such as NaCl or KC1 is used as a diluent, and the main reaction thereof is as follows:
- K 2 TaF 7 +5Na Ta+5NaF+2KF (1)
- K 2 TaF 7 reacts with liquid sodium under argon gas protection and at a certain temperature.
- the reduced tantalum powder is subjected to heat treatment after being washed with water and pickled, and then deoxidized by magnesium to obtain a final high-purity tantalum powder.
- the tantalum powder particles obtained by this method are granular. It is well known that the specific volume of tantalum powder is proportional to its specific surface area, that is, the smaller the average particle size of the tantalum powder, the larger the specific surface area and the higher the specific volume.
- the core of the current research is to control the formation, distribution and growth of crystal nuclei during sodium reduction by controlling the reducing conditions, including the composition of potassium fluoroantimonate and the soluble salt, the reduction temperature, and the rate of sodium injection.
- a tantalum powder having a specific surface area and particle size.
- the mechanical method is to obtain a pressure resistance and the like by controlling the hydrogenation milling or ball milling conditions.
- the simplification of sputum powder and the simplification of granules are a new means to improve the pressure resistance of glutinous powder products, while at the same time paying attention to the resulting reduction in capacity.
- No. 4,740,238 proposes an unstacked S prepared from an ingot comprising an FSSS average particle size of less than 2 ⁇ m, preferably 0.6 to 1.1 ⁇ m, a Scott density of not more than 30 g/in 3 and a BET specific surface area of at least 0.7 m 2 / G flaky powder.
- the tantalum powder is agglomerated, ground to about 2 to 3 ⁇ m, a BET specific surface area of 0.43 m 2 /g, and a Scott density of 18 to 27 g/in 3 .
- Patent US 4,940,490 proposes an improved sheet form and a method of producing such sheet-like tantalum powder.
- This tantalum powder is characterized by a Scott density of greater than 18 g/in 3 , preferably at least 90% of such flakes no greater than 55 ⁇ m.
- the flaky agglomerated particles have improved fluidity, brittle strength and compression properties as compared to conventional flakes.
- Patent WO 93/03,191 proposes an improved sheet form and a method of producing such a sheet.
- This feature is characterized by an average particle size range of FSSS of 2 to 55 ⁇ m and a BET specific surface area of 0.5 to 5.0 m 2 /g.
- the average particle size and specific surface area are selected such that the sheet-like aspect ratio (D/T) is in the range of 2 to 50, and the flake-like agglomerated powder provides improved fluidity.
- Patent US 5211741 proposes an improved method for producing such flaky powder.
- This tantalum powder is characterized by a Scott density of greater than 18 g/in 3 , preferably at least 90% of such flakes no greater than 55 ⁇ m.
- the flaky agglomerated particles have improved fluidity, brittle strength and compression properties as compared to conventional flakes.
- Patent US 5,261,942 also proposes an improved sheet form and a method of producing such sheet-like tantalum powder.
- This tantalum powder is characterized by a Scott density of greater than 18 g/in 3 , preferably at least 90% of such flakes of no more than 55 ⁇ m.
- the flaky agglomerated granules have improved fluidity, brittle strength and compression properties as compared to the conventional sheet.
- Patent US 5,580,367 is also similar to patent US 4,940,490.
- Patent US 4,441,927 proposes a composition of agglomerates obtained from ingots, including granules and a considerable number of flaky a.
- Patent CN101491834A relates to a tantalum powder and a preparation method thereof, and an electrolytic capacitor anode made of the tantalum powder.
- the tantalum powder has a BET specific surface area of 0.530 m 2 /g or less and a Vickers average particle diameter of 3.00 nm or more.
- the invention also relates to the preparation of the process wherein the preparation is carried out by reducing a ruthenium compound with a reducing agent, which is added as a seed crystal upon reduction, wherein the seed crystal is a ground a .
- Patent WO2004110684A2 describes a method of forming a metal powder of other electron tubes.
- the method includes high impact milling of the starting powder in a fluid medium and optionally a grinding medium using a high energy mill.
- the method of the present invention has the ability to reduce DC leakage and/or increase capacitance of the valve metal powder when forming the capacitor anode.
- Patent US 4,555,268 relates to a flaky powder having improved processing properties.
- the powder contained a flaky, granular S, which was at 1250 before mixing. C ⁇ 1550. C heat treatment for 5 ⁇ 120 minutes.
- the agglomeration of the mixed tantalum powder improves the processability.
- An object of the present invention is to provide a capacitor specific high specific capacitance a of 30,000 to 8000 ( ⁇ FV/g. Another object of the present invention is to reduce leakage current. Still another object of the present invention is to reduce the loss of tantalum powder. At the same time as the leakage current, the higher specific capacitance is maintained, that is, the improved combined performance of loss, leakage current and specific volume is achieved.
- the present invention provides a sheet + block structure a, which comprises a flaky granular powder, wherein the ratio of the flaky shape to the granular shape is ⁇ : ⁇ . ⁇ ⁇ ⁇ , such as ⁇ : ⁇ .25 ⁇ ⁇ , or 1: 0.4 ⁇ 0.9, for example 1:0.5 ⁇ 9.
- the ratio of -400 mesh is 20 to 40%, more preferably 25 to 35%, still more preferably 28 to 33%.
- the method according to the invention comprises:
- the tantalum powder described in step 1) is obtained by a sodium reduction potassium fluoroantimonate process.
- the tantalum powder described in the step 1) has a capacity of 3000 ( ⁇ FV/g to 8000 ( ⁇ FV/g.)
- the granular powder having the capacity is commercially available.
- the niobium powder obtained by sodium reduction of potassium fluoroantimonate is pickled prior to step 1), the impurities therein are washed off, and then flaking is started.
- the tantalum powder according to step 1) has a particle size of from 0.3 to 3.0 ⁇ m, preferably from 0.5 to 2.5 ⁇ m.
- the particle size can be obtained from the market, and the desired particle diameter can be obtained by controlling the ratio of the potassium fluoroantimonate potassium to the diluted salt KC1, the reaction temperature, the feeding amount and the like in the process of sodium reduction of potassium fluoroantimonate. ⁇ powder.
- the particle size of the raw material affects the size of the original powder sheet after ball milling, thereby affecting the physical properties and electrical performance indexes of the product to some extent.
- the ball milling process in the step 2) is not particularly limited as long as the flaky powder can be obtained.
- a stainless steel ball is used as the abrasive body in the ball mill.
- liquid ball abrasive medium is also employed during the ball milling process.
- liquid ball abrasives are some highly dispersible substances such as alcohol.
- a stainless steel ball is used as the abrasive body, and more preferably, the weight ratio of the stainless steel ball to the first portion of the tantalum powder is 3 to 10:1, more preferably 5 to 7:1.
- the weight ratio of the first portion to the liquid ball-milling agent is from 1:0.5 to 2.5, more preferably from 1:1.5 to 2.0.
- the length of time required for ball milling is different, and the size, shape and strength of the prepared sheets are also significantly different.
- the ball milling time setting is short, which is easy to cause large pieces, unevenness, incomplete chip formation, and low chip formation rate.
- the ball milling time is set too long, and the film is too thin to form a superposition, resulting in electrical properties and physics of the product. Performance is degraded. Therefore, it is necessary to select a suitable ball milling time, and the ball milling time is preferably controlled between 5 and 20 hours, more preferably 12 to 18 hours, and even more preferably 13 to 16 hours.
- the powder is also washed with water, pickled and removed prior to sieving in step 2).
- the tantalum powder obtained by the sheet + block structure is subjected to a pre-agglomeration, heat treatment, and oxygen reduction process.
- the mixing ratio of the chip formation and the granularity in the step 3) is 1:0.1 ⁇
- the ratio of chipping to granular mixing is 1:0.25 ⁇ ⁇ , or from the point of view of improving leakage current, or
- pellet + block structure of tantalum powder means that it includes flake particles and massive (i.e., granular) particles.
- a lower leakage current is achieved.
- lower losses are achieved.
- a satisfactory specific capacity is maintained while achieving lower losses and lower leakage currents.
- One or more of the above objects are achieved by the method, which satisfies the requirements of the capacitor product for the tantalum powder, in particular, the requirements for withstand voltage and leakage current.
- Figure 1 Variation of the leakage current of the sample in Examples 1-4 as a function of the ratio of flakes to granulated powder.
- Figure 2 Variations in the specific capacity of the samples in Examples 1-4 as a function of the ratio of flakes to granulated powder.
- Figure 3 A plot of the loss of the sample in Examples 1-4 as a function of the ratio of flakes to granulated powder.
- one physical quantity used to describe the thickness of the metal particles is the Fischer average particle size (FSSS/ ⁇ ) measured by a Fischer sub-screener.
- the Fischer's average particle size is obtained by measuring the flow rate of the powder filled in the metal tube by a gas transmission method using a Fischer sub-sifter, which is related to the particle size on the one hand and the cohesive strength of the powder on the other hand;
- the niobium powder obtained by the sodium reduction of potassium fluoroantimonate has a smaller specific surface area and a larger specific surface area; and for the agglomerated metal powder, powders having different specific surface areas may have similar average particle diameters; For powders of the same grade, the aggregated powder has a larger average particle size.
- the tantalum powder particle size (FSSS/ ⁇ ) of the present invention is determined according to the standard “Fei's method for measuring the particle size of refractory metals and compound powders" (Standard No. GB/T3249);
- the bulk density (SBD) is determined according to the standard “Metal powder bulk density determination first part funnel method” (standard No. GB/T1479) method; particle size distribution according to the standard “metal powder composition determination dry screening method” (standard No. GB/T1480) method is determined; the process is carried out according to the standard “Sampling Method for Powder Metallurgy Powder" (Standard No. GB/T5314).
- the detection methods of the elements in the tantalum powder are all determined according to national standards, and these standards include "Determination of carbon and sulfur in chemical analysis methods of 08 ⁇ 15076.8-2008", “GB/T 15076.9-2008” Analytical method for the determination of iron, chromium, nickel, manganese, titanium, aluminum, copper, tin, lead and zirconium in the sputum, GB/T 15076.12-2008 ⁇ chemical analysis method for the determination of phosphorus in ⁇ , GB/ T 15076.14-2008 Determination of Oxygen Content in Chemical Analysis Methods, GB/T 15076.15-2008 Determination of Hydrogen Content in Chemical Analysis Methods, GB/T 15076.16-2008, Determination of Sodium and Potassium in Chemical Analysis Methods Determination”.
- the detection method and equipment for the electrical properties of the tantalum powder are all measured in accordance with the national standard "GB/T 3137-2007 powder electrical performance test method".
- Another physical quantity used to describe the thickness of the metal particles is the specific surface area (m 2 /g) of the BET measurement by low temperature nitrogen adsorption.
- the inventors have also unexpectedly discovered that if an effective pre-agglomeration process is employed after step 3), the bulk density of the sample and the ratio of -400 mesh can be greatly improved. Applicant unexpectedly, if the ratio of -400 mesh is too high, it will cause problems such as poor fluidity of the powder and poor uniformity of molding. If the ratio of -400 mesh is too low, the surface of the anode block after molding will be rough and easy to fall. Fall off the corner. For the purpose of the present invention, the control of -400 mesh at 20%-40% has achieved good results, which can significantly improve the physical properties of the sample, facilitate the sintering and molding of the powder, and improve the user adaptability of the sample. . Heat treatment after pre-agglomeration, Deoxidation (860 ° C ⁇ 960 ° C / insulation 1 ⁇ 4h, evacuated magnesium 1 ⁇ 4h), after the above steps, we finally get the required a.
- the heat treatment agglomeration is at 1000. Keep C for 30 min ⁇ 60 min, then heat up and at 1300. C ⁇ 1450. C is kept at 30 min ⁇ 90 min.
- the deoxygenation is at 860.
- C ⁇ 960. Insulate at C for 1 ⁇ 4h, and evacuate magnesium for 1 ⁇ 4h.
- the commercially available 4000 ( ⁇ FV/g high-capacity tantalum powder (that is, the unheated agglomerated tantalum powder after reduction) is taken as an example. First, it is divided into two parts, and then the first part is pickled. After the impurities are washed off, partial flaking is started. The film is prepared by agitating ball mill.
- the grinding body is made of D2mm stainless steel ball, the liquid ball grinding medium is alcohol, the milling time is 15 hours, and the weight ratio of steel ball to strontium powder is 6:1; The weight ratio of tantalum powder to liquid ball mill is 1:1.8.
- the speed used in ball milling is 100 rpm.
- the powder is separated from the polishing body, washed with water, pickled and removed, and sieved to obtain a powdered powder. Then, the mixture is uniformly mixed with the second portion in a ratio of 1:1, and then subjected to agglomeration, heat treatment, and oxygen reduction to obtain a special structure of the tantalum powder of the sheet + block.
- the heat treatment agglomeration conditions used in this example were at 1350. C under warranty At 40 min, the oxygen is reduced to 900. The temperature was kept at 180 min for 180 min and then evacuated for 180 min.
- Example 2 Example 2:
- the commercially available 4000 ( ⁇ FV/g high-capacity tantalum powder (that is, the unheated agglomerated tantalum powder after reduction) is taken as an example. First, it is divided into two parts, and then the first part is pickled. After the impurities are washed off, partial flaking is started. The film is prepared by agitating ball mill.
- the grinding body is made of D2mm stainless steel ball, the liquid ball grinding medium is alcohol, the milling time is 15 hours, and the weight ratio of steel ball to strontium powder is 6:1; The weight ratio of tantalum powder to liquid ball mill is 1:1.8; the speed is 100 rpm.
- the powder was separated from the polishing body, washed with water, pickled and removed, and sieved to disperse the powder of the cerium powder to obtain a sheet form. Then, the mixture is uniformly mixed with the second powder at a ratio of 1:0.75, and then subjected to agglomeration, heat treatment, and oxygen reduction to obtain a special structure of the tantalum powder of the sheet + block.
- the heat treatment agglomeration conditions used in this example were 1350 ° C / 40 min, and the oxygen reduction conditions were at 900. Insulate at 180 for 180 min and then evacuate for 180 min.
- Example 3 Example 3:
- the commercially available 4000 ( ⁇ FV/g high-capacity tantalum powder (that is, the unheated agglomerated tantalum powder after reduction) is taken as an example. First, it is divided into two parts, and then the first part is pickled. After the impurities are washed off, partial flaking is started. The film is prepared by agitating ball mill.
- the grinding body is made of D2mm stainless steel ball, the liquid ball grinding medium is alcohol, the milling time is 15 hours, and the weight ratio of steel ball to strontium powder is 6:1; The weight ratio of tantalum powder to liquid ball mill is 1:1.8; the speed is 100 rpm.
- the powder was separated from the polishing body, washed with water, pickled and removed, and sieved to disperse the powder of the tantalum powder to obtain a sheet form. Then, the second powder is uniformly mixed at a ratio of 1:0.50, and then subjected to agglomeration, heat treatment, and oxygen reduction to obtain a special structure of the tantalum powder of the sheet + block.
- the heat treatment agglomeration conditions used in this embodiment are
- the commercially available 4000 ( ⁇ FV/g high-capacity tantalum powder (that is, the unheated agglomerated tantalum powder after reduction) is taken as an example. First, it is divided into two parts, and then the first part is pickled. After the impurities are washed off, partial flaking is started. The film is prepared by agitating ball mill.
- the grinding body is made of D2mm stainless steel ball, the liquid ball grinding medium is alcohol, the ball milling time is 15 hours, and the weight ratio of steel ball to strontium powder is 6:1; The weight ratio of tantalum powder to liquid ball mill is 1:1.8; the speed is 100 rpm.
- the powder was separated from the polishing body, washed with water, pickled and removed, and sieved to disperse the powder of the cerium powder to obtain a sheet form. Then, the mixture is uniformly mixed with the second powder at a ratio of 1:0.25, and then subjected to agglomeration, heat treatment, and oxygen reduction to obtain a special structure of the tantalum powder of the sheet + block.
- the heat treatment agglomeration conditions used in this example were 1350 ° C / 40 min, and the oxygen-reducing parts were at 900. Insulate at 180 for 180 min and then evacuate for 180 min.
- the commercially available 7000 ( ⁇ FV/g high-capacity tantalum powder (that is, the unheated agglomerated tantalum powder after reduction) is taken as an example. First, divide it into two parts, and then carry out the first part. Pickling, washing off the impurities and starting to partially flaky. The tableting was carried out by means of a stirring ball mill.
- the grinding body is made of D2mm stainless steel ball, the liquid ball grinding medium is alcohol, the milling time is 18 hours, the weight ratio of steel ball to tantalum powder is 6:1; the weight ratio of tantalum powder to liquid ball grinding agent is 1:2.0; /minute.
- the powder was separated from the polishing body, washed with water, pickled and removed, and sieved to disperse the powder of the cerium powder to obtain a sheet form. Then, the second powder is uniformly mixed with a ratio of 1:0.45, and then subjected to agglomeration, heat treatment, and oxygen reduction to obtain a special structure of the tantalum powder.
- the heat treatment agglomeration conditions used in this embodiment are
- the commercially available 7000 ( ⁇ FV/g high-capacity tantalum powder (that is, the unheated agglomerated tantalum powder after reduction) is taken as an example. First, it is divided into two parts, and then the first part is pickled. After the impurities are washed off, partial flaking is started. The film is prepared by agitating ball mill.
- the grinding body is made of D2mm stainless steel ball, the liquid ball grinding medium is alcohol, the milling time is 18 hours, and the weight ratio of steel ball to strontium powder is 6:1; The weight ratio of tantalum powder to liquid ball mill is 1:2.0; the speed is 100 rpm.
- the powder was separated from the polishing body, washed with water, pickled and removed, and sieved to disperse the powder of the cerium powder to obtain a sheet form. Then, the mixture is uniformly mixed with the second powder at a ratio of 1:0.30, and then subjected to agglomeration, heat treatment, and oxygen reduction to obtain a special structure of the ruthenium powder of the tablet + block.
- the heat treatment agglomeration conditions used in this embodiment are
- the commercially available 4000 ( ⁇ FV/g high-capacity tantalum powder (that is, the unheated agglomerated tantalum powder after reduction) is taken as an example. It is pickled and pre-agglomerated according to the conventional production process. In the process of agglomeration, oxygen reduction, etc., the cerium powder produced by the normal process is obtained.
- the heat-treated agglomerated component used in this embodiment is 1350 C/40 min, and the oxygen-reducing condition is 180 min at 900 C, and evacuated for 180 min. :
- the commercially available 7000 ( ⁇ FV/g high-capacity tantalum powder (that is, the unheated agglomerated tantalum powder after reduction) is taken as an example. It is pickled and pre-agglomerated according to the conventional production process. In the process of agglomeration, oxygen reduction, etc., the barium powder produced by the normal process is obtained.
- the heat treatment agglomeration condition used in this example is 1260 C/30 min, and the oxygen reduction condition is 180 min at 900 C, evacuated for 180 min, and oxygen is lowered twice.
- Fsss ( m ) represents the particle size of Feis
- SBD (g/cc) represents the bulk density
- +80 (%) represents the proportion of tantalum powder greater than 80 mesh
- -400 (%) represents less than 400.
- the proportion of the target powder is the proportion of the target powder.
- the particle size of the powder of the example powder is larger than that of the powder of the comparative example, and as the proportion of the powdered powder increases, the particle size of the powder increases, leakage current and loss, etc. Electrical performance parameters are improved.
- Other physical properties such as bulk density, proportion of tantalum powder of more than 80 mesh, proportion of tantalum powder of less than 400 mesh, and the like are comparable to those of the comparative example.
- Table 2 Main impurities in the ⁇ ⁇ (unit: ppm) After comparative analysis, the o of Example 4 ⁇ decreases with the increase of the ratio of 4 ⁇ in 4 ⁇ , which is lower than the comparative example as a whole. Without being bound by the general theory, the inventors believe that the specific surface area generally has a certain relationship with the o content, and the smaller the specific surface area, the easier it is to control the oxygen content to be lower. It is indicated that the specific surface area is smaller than the comparative example. Other impurity contents such as C, N, and Fe are equivalent to those of the comparative examples.
- the upper and lower samples were press-formed, the density of the compact was 5.0 g/cm 3 , and the weight of the core powder was 0.25 g, D4 mm. Place it in a vacuum oven at 10 3 Pa at 1400. S/10 sintering for 10 minutes gave a sintered mass which was then energized in a 0.1% phosphoric acid solution at 70 V for 120 min with an energization temperature of 80. C, current density is 150mA/g. The rest are tested according to the national standard GB/T 3137-2007 standard. ⁇ The specific volume of the product is listed in Table 3.
- K(nA/FV) represents leakage current
- CV(FV/g) represents capacity
- SHD(%) represents radial shrinkage
- the leakage current of the embodiment first decreases with the increase of the proportion of the medium-sized bismuth powder, and the whole is lower than the comparative example, but when the ratio of chip formation approaches or exceeds 80% (see the embodiment). 4) The leakage current of the tantalum powder sample began to increase (but still better than Comparative Example 1).
- Fsss ( ⁇ ) represents the particle size of Feis
- SBD g/cc
- +80 (%) represents the proportion of tantalum powder greater than 80 mesh
- -400 (%) represents less than 400.
- the proportion of the target powder is the proportion of the target powder.
- the Fischer's particle diameter of the example was larger than that of the comparative example, and as the proportion of the tableting powder increased, the particle size of the tantalum powder increased, and the grain shape became simple.
- Other ratios such as bulk density, proportion of tantalum powder greater than 80 mesh, and ratio of tantalum powder less than 400 mesh.
- the physical properties such as the example are comparable to the comparative examples.
- Example 4 ⁇ decreases with the increase of the ratio of 4 ⁇ in 4 ⁇ , which is lower than that of the comparative example, indicating that the specific surface area is smaller than the comparative example.
- the content of impurities such as C, N, and Fe is equivalent to that of the comparative example.
- K(nA/ FV) represents leakage current
- CV( FV/g ) represents capacity
- SHD (%) represents radial shrinkage
- SHV (% ) Volume shrinkage.
- the analytical data shows that the method of the present invention improves the withstand voltage characteristics of the tantalum powder product, reduces leakage current, and reduces loss. It satisfies the requirements of capacitor products for voltage and leakage current of tantalum powder.
- a suitable product of this patent is 3000 ( ⁇ FV/g - 8000 ( ⁇ FV/g ⁇ powder.
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DK13900179.6T DK3089180T3 (da) | 2013-12-25 | 2013-12-25 | Kondensatorgrad-tantalpulver med højspecifik volumen til forbedring af elektrisk ydeevne og fremstillingsfremgangsmåde dertil |
US14/767,243 US10074486B2 (en) | 2013-12-25 | 2013-12-25 | High specific capacitance capacitor-grade tantalum powder with improved electrical properties and process for making the same |
CN201380069646.9A CN104969318A (zh) | 2013-12-25 | 2013-12-25 | 一种改善了电性能的电容器级高比容钽粉及其制备方法 |
MX2015014640A MX2015014640A (es) | 2013-12-25 | 2013-12-25 | Polvo de tantalo grado capacitor de alta capacitancia especifica con propiedades electricas mejoradas y proceso para hacer el mismo. |
EP13900179.6A EP3089180B1 (en) | 2013-12-25 | 2013-12-25 | Capacitor grade high specific volume tantalum powder improving electrical performance and preparation method therefor |
PCT/CN2013/090386 WO2015096048A1 (zh) | 2013-12-25 | 2013-12-25 | 一种改善了电性能的电容器级高比容钽粉及其制备方法 |
IL242043A IL242043B (en) | 2013-12-25 | 2015-10-13 | Capacitor-grade tantalum powder with high specific capacitance with improved electrical properties and a process for its preparation |
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WO2016026092A1 (zh) * | 2014-08-20 | 2016-02-25 | 宁夏东方钽业股份有限公司 | 一种复合钽粉及其制备方法及该钽粉制备的电容器阳极 |
CN106392060B (zh) * | 2016-10-12 | 2019-02-12 | 宁夏东方钽业股份有限公司 | 一种混合钽粉及其制备方法 |
US11534830B2 (en) * | 2017-12-28 | 2022-12-27 | Ningxia Orient Tantalum Industry Co., Ltd | Tantalum powder and preparation method therefor |
US20220080502A1 (en) * | 2020-09-14 | 2022-03-17 | Kemet Electronics Corporation | Freeze Drying and Tumble Drying of Flake Powder |
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CN114939663B (zh) * | 2022-05-24 | 2023-03-10 | 中国工程物理研究院材料研究所 | 一种3d打印用钯粉及其制备方法和应用 |
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US10074486B2 (en) | 2018-09-11 |
DK3089180T3 (da) | 2020-02-10 |
MX2015014640A (es) | 2016-03-01 |
EP3089180B1 (en) | 2019-11-06 |
EP3089180A4 (en) | 2017-08-23 |
EP3089180A1 (en) | 2016-11-02 |
US20160314904A1 (en) | 2016-10-27 |
CN104969318A (zh) | 2015-10-07 |
IL242043B (en) | 2020-11-30 |
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