WO2015085816A1 - Capteur d'humidité à mems et procédé de préparation - Google Patents

Capteur d'humidité à mems et procédé de préparation Download PDF

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Publication number
WO2015085816A1
WO2015085816A1 PCT/CN2014/087768 CN2014087768W WO2015085816A1 WO 2015085816 A1 WO2015085816 A1 WO 2015085816A1 CN 2014087768 W CN2014087768 W CN 2014087768W WO 2015085816 A1 WO2015085816 A1 WO 2015085816A1
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comb
electrode
substrate
humidity sensor
tooth
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PCT/CN2014/087768
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English (en)
Chinese (zh)
Inventor
毛海央
欧文
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江苏物联网研究发展中心
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Publication of WO2015085816A1 publication Critical patent/WO2015085816A1/fr

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125Composition of the body, e.g. the composition of its sensitive layer
    • G01N27/127Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles

Definitions

  • the invention relates to a MEMS humidity sensor and a preparation method thereof.
  • Humidity is a parameter that characterizes the amount of water vapor in the atmosphere and is generally expressed as relative humidity (%RH), which represents the ratio of the pressure of water vapor in the air to the saturated water vapor pressure at the same temperature.
  • the humidity of the air is directly related to the daily work, life and production of the people, so the monitoring and control of humidity is becoming more and more important.
  • humidity measurement is affected by other factors (atmospheric pressure, temperature), and calibration is also a problem, so it can be said that humidity is one of the most difficult parameters to measure accurately in conventional environmental parameters.
  • the well-known hair hygrometer, dry and wet bulb hygrometer, etc. can no longer meet the actual needs at this stage. Therefore, research on humidity sensors has been active at home and abroad.
  • the polymer compound humidity sensor has the advantages of good moisture sensitivity and high sensitivity, but its performance is lowered and stabilized under high temperature and high humidity conditions. Sexual deterioration, corrosion resistance and anti-staining ability are also weakened; semiconductor ceramic material humidity sensor has the advantages of better moisture sensing performance, simple production, low cost, short response time, and heat cleaning, but the accuracy of such sensors is better. Low- and high-temperature performance is also poor, and it is difficult to achieve integration; compared with the above various moisture-sensitive materials, the porous metal oxide humidity sensor has high response speed, good chemical stability, high temperature and low temperature resistance, and The advantages of integration, etc., however, the implementation process is difficult to achieve compatibility with conventional microelectronic processes.
  • An object of the present invention is to provide a MEMS humidity sensor which has a simple structure, high sensitivity, strong process compatibility, and wide application range.
  • Still another object of the present invention is to provide a method of fabricating a MEMS humidity sensor that is simple in manufacturing process and easy to implement.
  • the present invention employs the following technical solutions:
  • a MEMS humidity sensor includes a support substrate, an electrical isolation layer disposed on the support substrate, and a comb assembly disposed on the electrical isolation layer, wherein the comb resistor assembly is provided with a heating resistor strip, and the heating resistor strip is covered There are nanofiber bodies.
  • the comb assembly includes a first comb connection electrode, a first comb tooth, a second comb connection electrode and a second comb disposed on the electrical isolation layer, wherein the first comb connection electrode is connected a first comb-tooth test electrode, the second comb-tooth connection electrode is connected to a second comb-tooth test electrode, and the first comb-tooth test electrode is connected to the first lead via the electrode connection line Electrode connection, the second comb-tooth test electrode is connected to the second conductive electrode via the electrode connection line;
  • the upper surface of the support substrate is partially etched, and the outer sides of the first conductive electrode and the second conductive electrode are at least partially suspended above the etched portion of the support substrate;
  • the first comb teeth and the second comb teeth are disposed offset from each other, and the heating resistor strip is distributed around the gap between the first comb teeth and the second comb teeth, the heating resistor strip and the first Both the comb teeth and the second comb teeth are not in contact.
  • the heating resistor strip has a thickness of 300 nm to 2 ⁇ m and a width of 800 nm to 45 ⁇ m.
  • the height of the nanofiber body is the same as the height of the first comb-shaped connecting electrode, the first comb tooth, the second comb-shaped connecting electrode, and the second comb tooth.
  • the first comb-shaped connecting electrode, the first comb-shaped teeth, the second comb-shaped connecting electrode and the second comb-shaped teeth have a width of 1-10 micrometers and a height of 1-20 micrometers.
  • the first comb teeth and the second comb teeth have a length of 5 to 500 ⁇ m, a gap of 1 to 50 ⁇ m, and a logarithm of 1 to 500.
  • the invention employs the following technical solutions:
  • the nanofiber body is obtained by plasma bombarding a polymer material.
  • the method comprises:
  • Step 1 providing a substrate; and providing an electrical isolation layer on a surface of the substrate;
  • Step 2 etching the electrical isolation layer to form a substrate contact window over the substrate, the substrate contact window penetrating the electrical isolation layer;
  • Step 3 Sputtering a first metal layer over the substrate on which the substrate contact window is opened, and etching the first metal layer to provide an S-type heating resistor strip between the first comb tooth and the second comb tooth.
  • a power supply electrode is disposed at both ends of the S-type heating resistor strip, and a first comb-shaped test electrode, a second comb-shaped test electrode, an electrode connection line, and a first conduction are respectively disposed outside the first comb-shaped connecting electrode and the second comb-shaped connecting electrode
  • An electrode and a second conductive electrode, the outer sides of the first conductive electrode and the second conductive electrode being at least partially located on the substrate contact window;
  • Step 4 spin coating a layer of photoresist material over the substrate after etching the first metal layer, and forming a first comb tooth, a second comb tooth, and a first comb tooth connecting electrode by a photolithography process Forming an opening pattern of the photoresist material layer at a position where the electrode is connected to the second comb;
  • Step 6 Spin coating a layer of polymer over the substrate on which the second metal layer is patterned, and removing the first comb, the second comb, the first comb connecting electrode and the second comb in the corresponding comb region a position outside the tooth connecting electrode forms a pattern of the polymer;
  • Step 7 using a plating process to form a third metal layer on the substrate corresponding to the pattern position of the second metal layer;
  • Step 8 forming a nanofiber body by plasma bombarding the polymer material at a pattern position of the polymer
  • Step 9 Through the substrate release window, the substrate is etched under both the first conductive electrode and the second conductive electrode such that neither the first conductive electrode nor the second conductive electrode is in electrical communication with the substrate.
  • the plasma is an oxygen plasma and/or an argon plasma
  • the polymer material is polyimide, positive photoresist, negative photoresist, polydimethylsiloxane (PDMS) Or Parylene.
  • the material of the electrical isolation layer is silicon oxide or silicon nitride; the material of the first metal layer is gold, copper, aluminum or platinum; and the material of the second metal layer is chromium, gold, nickel or copper;
  • the material of the third metal layer includes gold, copper, aluminum or platinum.
  • the MEMS humidity sensor of the present invention utilizes the hydrophilicity of the nanofiber body and the change of the dielectric constant after adsorbing the water molecule, and constructs the MEMS comb-tooth capacitive humidity sensor structure as a moisture sensitive and dielectric material.
  • the nanofiber body adsorbs water molecules, the capacitance value between the first comb teeth and the second comb teeth will change.
  • the present invention proposes a new humidity sensor structure based on this principle, achieves the purpose of humidity detection, and has a simple structure. High sensitivity, strong process compatibility, wide application range, safe and reliable.
  • the nanofiber body is obtained by bombarding the polymer by plasma.
  • the comb teeth and the connecting electrode having a larger height in the structure are obtained by electroplating process, the preparation process is simple, easy to implement, and convenient for integrated processing.
  • FIG. 1 is a top plan view of a MEMS humidity sensor according to an embodiment of the present invention.
  • FIG. 2 is a top plan view of a MEMS humidity sensor not showing a nanofiber body according to an embodiment of the present invention
  • FIG. 3 is a cross-sectional view of a MEMS humidity sensor according to an embodiment of the present invention.
  • FIG. 4 is a schematic cross-sectional view showing an electrical isolation layer disposed on a substrate in a step of implementing a MEMS humidity sensor according to an embodiment of the present invention
  • FIG. 5 is a schematic cross-sectional view showing a substrate contact window formed on an electrical isolation layer in the step of implementing a MEMS humidity sensor according to an embodiment of the present invention
  • FIG. 6 is a schematic cross-sectional view showing a first metal layer on an electrical isolation layer in a step of implementing a MEMS humidity sensor according to an embodiment of the present invention
  • FIG. 7 is a schematic cross-sectional view showing a pattern of a photoresist material layer on a first metal layer in a step of implementing a MEMS humidity sensor according to an embodiment of the present invention
  • FIG. 8 is a schematic cross-sectional view showing the second metal layer patterning by using a lift-off process in the step of implementing the MEMS humidity sensor according to the embodiment of the present invention
  • FIG. 9 is a schematic cross-sectional view showing the formation of a polymer pattern in the step of implementing a MEMS humidity sensor according to an embodiment of the present invention.
  • FIG. 10 is a schematic diagram of obtaining a third metal layer at a position of a second metal layer by using an electroplating process in the step of implementing a MEMS humidity sensor according to an embodiment of the present invention
  • FIG. 11 is a schematic cross-sectional view showing a nanofiber body formed in the step of implementing a MEMS humidity sensor according to an embodiment of the present invention
  • FIG. 12 is a schematic cross-sectional view showing the first conductive electrode and the second conductive electrode being electrically connected to the substrate after the step of implementing the MEMS humidity sensor according to the embodiment of the present invention
  • Figure 13 is a diagram showing the comb tooth area indication in the step of realizing the formation of polymer patterning according to the first embodiment of the present invention.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • the MEMS moisture sensor includes a support substrate 1, an electrical isolation layer 102 disposed on the support substrate 1, and a comb assembly disposed on the electrical isolation layer 102.
  • the comb assembly includes a first comb connection electrode 2, a first comb 3, a second comb connection electrode 4 and a second comb 5 disposed on the electrical isolation layer 102, the first comb connection electrode 2 being connected a first comb-shaped test electrode 10 is connected to the second comb-toothed electrode 4, and the first comb-shaped test electrode 10 is connected to the first conductive electrode 15 via the electrode connection line 12, The second comb test electrode 11 is connected to the second conductive electrode 13 via the electrode connection line 12.
  • a heating resistor strip 8 is disposed between the first comb teeth 3 and the second comb teeth 5.
  • the first comb teeth 3 and the second comb teeth 5 are offset from each other, and the heating resistor strip 8 is distributed around the gap between the first comb teeth 3 and the second comb teeth 5, and the heating resistor strip 8 is heated. There is no contact with both the first comb teeth 3 and the second comb teeth 5.
  • the heating resistor strip 8 is covered with a nanofiber body 6.
  • the upper surface of the support substrate 1 is partially etched, and the outer sides of the first conductive electrode 15 and the second conductive electrode 13 are at least partially suspended above the etched portion of the support substrate 1.
  • the first comb-shaped connecting electrode 2, the first comb-toothing 3, the second comb-shaped connecting electrode 4, and the second comb-tooth 5 have a width of 1-10 micrometers and a height of 1-20 micrometers, and the first comb teeth 3 and the second The comb teeth 5 have a length of 5 to 500 ⁇ m, a gap of 1 to 50 ⁇ m, and a logarithm of 1 to 500.
  • the height of the nanofiber body 6 is equivalent to the height of the first comb-shaped connecting electrode 2, the first comb-tooth 3, the second comb-connecting electrode 4, and the second comb-tooth 5, and is 1-20 ⁇ m.
  • the height of the nanofiber body 6 and the first comb-shaped connecting electrode 2, the first comb teeth 3, the second comb-shaped connecting electrode 4 and the second comb is the same.
  • the heating resistor strip 8 has a thickness of 300 nm to 2 ⁇ m and a width of 800 nm to 45 ⁇ m.
  • the nanofiber body 6 is obtained by plasma bombarding a polymer material, which is an oxygen plasma and/or an argon plasma, and the polymer material is a polyimide, a positive photoresist, a negative photoresist.
  • a polymer material which is an oxygen plasma and/or an argon plasma
  • the polymer material is a polyimide, a positive photoresist, a negative photoresist.
  • the nanofiber body 6 adsorbs water molecules, and the dielectric constant thereof changes, so that the capacitance value of the capacitor formed by the first comb teeth 3 and the second comb teeth 5 changes; when a plurality of capacitors pass
  • the total capacitance measured between the first comb-shaped test electrode 10 and the second comb-shaped test electrode 11 is the value of each pair of comb-tooth capacitances.
  • the MEMS humidity sensor of the present embodiment utilizes the hydrophilicity of the nanofiber body and the change of the dielectric constant after adsorbing the water molecule, and constructs the MEMS comb-tooth capacitive humidity sensor structure as a moisture sensitive and dielectric material. After the fiber body adsorbs the water molecules, the capacitance value between the first comb teeth and the second comb teeth will change.
  • the present invention proposes a new humidity sensor structure based on this principle, achieves the purpose of humidity detection, has a simple structure and high sensitivity. , process compatible Strong, wide range, safe and reliable.
  • Step 1 providing a substrate 101; providing an electrical isolation layer 102 on the surface of the substrate 101;
  • an electrically isolating layer 102 is formed on the surface of the substrate 101, and the electrically isolating layer 102 is formed, for example, by growing a layer of SiO 2 material by dry oxygen oxidation.
  • the thickness of the electrical isolation layer 102 is The temperature of the dry oxygen oxidation is 950 ° C, and the content of oxygen is 60%; the substrate 101 is made of a conventional material, and the material of the substrate 101 includes silicon.
  • Step 2 selectively masking and etching the above-mentioned electrical isolation layer 102 to form a substrate contact window 201 over the substrate 101, the substrate contact window 201 through the electrical isolation layer 102;
  • a photoresist is spin-coated on the surface of the electrical isolation layer 102, and an opening pattern is formed on the photoresist by a photolithography process, followed by reactive ion etching (RIE) SiO 2 .
  • the opening pattern on the photoresist is transferred onto the electrical isolation layer 102 to form an opening pattern on the electrically isolating layer 102, that is, the substrate contact window 201; the dry etching by oxygen plasma and the sulfuric acid/hydrogen peroxide wet degumming phase
  • the bonding method removes the photoresist on the surface of the electrical isolation layer 102.
  • the RIE electrical isolation layer 102 has an RF power of 300 W, a cavity pressure of 200 mTorr, and an etching gas of CF 4 , CHF 3 and He mixed gas, and a corresponding flow rate of 10/50/12 sccm (standard-state cubic centimeter per minute). ).
  • Step 3 sputtering a first metal layer over the substrate 101 on which the substrate contact window 201 is opened, selectively masking and etching the first metal layer to be in the first comb 3 and the second comb 5
  • a heating resistor strip 8 is disposed between the heating resistor strips 8 and a power supply electrode 9 is disposed at the two ends.
  • the first comb-shaped connecting electrode 10 and the second comb-connecting electrode 4 are respectively provided with a first comb-shaped test electrode 10 and a second comb. a tooth test electrode 11, an electrode connection line 12, a first conductive electrode 15 and a second conductive electrode 13, the outer side of the first conductive electrode 15 and the second conductive electrode 13 at least partially located on the substrate contact window 201;
  • a first metal layer is sputtered over the substrate 101 on which the substrate contact window 201 is opened, the material of the first metal layer is Al, and the thickness thereof is 1 micrometer; Positioning the Al metal layer at the S-type heating resistor strip 8, the power supply electrode 9, the first comb-shaped test electrode 10, the second comb-shaped test electrode 11, the electrode connection line 12, the first conductive electrode 15, and the second conductive electrode 13 Patterning; the photoresist over the substrate 101 is subsequently removed by organic cleaning.
  • the patterning of Al metal is realized by wet etching of Al etching solution.
  • the material of the metal layer may also be titanium, gold, platinum or copper, and the first comb-shaped test electrode 10 and the second comb-shaped test electrode 11 are formed for outputting the capacitance of the entire device to form a power supply.
  • the electrode 9 is used to heat the heating resistor strip 8 so that water molecules adsorbed by the nanofiber body 6 are evaporated.
  • Step 4 spin coating a photoresist material layer 401 over the substrate after etching the first metal layer, and forming a first comb tooth 3, a second comb tooth 5, and a first comb by a photolithography process.
  • the positions of the tooth connecting electrode 2 and the second comb connecting electrode 4 form an opening pattern of the photoresist;
  • the photoresist material layer 401 is spin-coated over the substrate 101 on which the first metal layer pattern has been disposed, and the photoresist material layer 401 is patterned by photolithography to make it An opening pattern of the photoresist material layer 401 is formed at a position corresponding to the formation of the first comb teeth 3, the second comb teeth 5, the first comb-shaped connecting electrodes 2, and the second comb-shaped connecting electrodes 4.
  • Step 5 sputtering a second metal layer 501 on the substrate 101 forming the opening pattern of the photoresist material layer 401, and patterning the second metal layer 501 by using a lift-off process;
  • sputtering is performed on the substrate 101 on which the opening pattern of the photoresist material layer 401 is disposed.
  • a second metal layer 501 the material of the second metal layer 501 is Au, and the thickness thereof is 100 nm; the substrate on which the second metal layer 501 has been disposed is immersed in the acetone solution under normal temperature and normal pressure for a period of time until lithography
  • the glue material layer 401 is completely dissolved in acetone to effect patterning of the second metal layer 501.
  • Step 6 Spin-coating a layer of polymer 601 over the substrate 101 patterned to form the second metal layer 501, and removing the first comb teeth 3, the second comb teeth 5, and the first comb teeth in the corresponding comb-tooth region 16.
  • the position outside the connecting electrode 2 and the second comb-shaped connecting electrode 4 forms a pattern of the polymer 601, and the comb-tooth region 16 is a region framed by a broken line in FIG. 13;
  • the polymer 601 is disposed above the substrate 101 on which the second metal layer 501 pattern has been disposed; the material of the polymer 601 in the embodiment is polyimide, and the thickness is 8 micrometers.
  • a spin coating method is used; in this embodiment, the patterning of the polymer 601 is realized by photolithography, so that the first comb teeth 3 and the second are removed in the corresponding comb-tooth region 16.
  • the first comb-shaped connecting electrode 2 and the second comb-shaped connecting electrode 4 forms a pattern of the polymer 601, including a gap between the filling comb teeth, forming a comb-protecting outer layer 7;
  • the function of the protective outer layer 7 is to prevent lateral growth of the outermost comb teeth, the outer side of the first comb-shaped connecting electrode 2 and the outer side of the second comb-shaped connecting electrode 4 during plating, which affects the structure and performance of the device.
  • Step 7 Using a plating process, a third metal layer of a certain thickness is plated on the substrate 101 corresponding to the pattern position of the second metal layer 501.
  • a third metal layer of a certain thickness is plated on the substrate 101 corresponding to the pattern position of the second metal layer 501 by an electroplating process.
  • the material of the third metal layer may be gold, copper, nickel or platinum.
  • the material of the third metal layer is gold; the height of the third metal layer is equivalent to the height of the polymer, and is 8 micrometers.
  • Step 8 Forming the nanofiber body 6 at the pattern position of the polymer 601.
  • the nanofiber body 6 is formed by plasma bombardment of the polymer material, the plasma is oxygen plasma and/or argon plasma, and the polymer material is polyimide, positive photoresist, negative photoresist, A polymeric material commonly used in polydimethylsiloxane (PDMS), parylene, or other microelectronic processes, for example, as shown in FIG. 11, the substrate 101 on which the third metal layer has been implemented is placed In a plasma machine, oxygen plasma bombardment was performed for 30 minutes until the polymer 601 formed the nanofiber body 6. Among them, during the oxygen plasma bombardment, the RF power is 300 W, the oxygen flow rate is 200 sccm, and the chamber pressure is 5 Pa.
  • the polymer 601 is formed by nano-fibrous nanofiber body 6 formed by bombardment with oxygen plasma, and the nanofiber body 6 has hydrophilic properties, and its dielectric constant changes after adsorbing water molecules.
  • Step 9 Through the substrate release window 14, the substrate 101 is etched under both the first conductive electrode 15 and the second conductive electrode 13, so that neither the first conductive electrode 15 nor the second conductive electrode 13 is in electrical communication with the substrate 101.
  • the substrate 101 in the isotropic etching device structure is XeF 2 dry etching technology, and the substrate is etched downward through the substrate release window 14 at the same time.
  • the bottom 101 does not electrically connect the first conductive electrode 15 and the second conductive electrode 13 to the substrate 101 after a period of time, and the overall structure of the MEMS humidity sensor of the present embodiment is obtained.
  • the lateral dimensions of the first conductive electrode 15 and the second conductive electrode 13 are both 10 ⁇ 10 ⁇ m 2 , and the first conductive electrode 15 and the second conductive electrode 13 may also be a plurality of smaller-sized electrodes. The combination.
  • the nanofiber body is obtained by plasma bombardment of the polymer, and the comb tooth and the comb tooth connecting electrode having a larger height in the device structure are obtained by using an electroplating process, the preparation process is simple, easy to implement, and easy to integrate. machining.

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Abstract

La présente invention concerne un capteur humidité à MEMS et son procédé de préparation. Le capteur d'humidité à MEMS comprend un substrat de support (1), une couche d'isolation électrique (102) disposée sur le substrat de support (1) et un composant en peigne (2, 3, 4, 5) disposé sur la couche d'isolation électrique (102). Une bande de résistance chauffante (8) est disposée entre le composant en peigne (2, 3, 4, 5), et une nanofibre (6) recouvre la bande de résistance chauffante (8). Le capteur d'humidité à MEMS possède une structure simple, une sensibilité élevée et une puissante compatibilité de traitement, ce qui est commode pour l'intégration et la fabrication.
PCT/CN2014/087768 2013-12-11 2014-09-29 Capteur d'humidité à mems et procédé de préparation WO2015085816A1 (fr)

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CN201310674068.3 2013-12-11
CN201310674068.3A CN103630582B (zh) 2013-12-11 2013-12-11 一种mems湿度传感器及制备方法

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* Cited by examiner, † Cited by third party
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CN114123861A (zh) * 2021-11-23 2022-03-01 吉林大学 一种低频振动环境的宽频域振动能采集装置及制备方法

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CN103630582B (zh) * 2013-12-11 2016-02-10 江苏物联网研究发展中心 一种mems湿度传感器及制备方法
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CN114858874A (zh) * 2022-07-07 2022-08-05 苏州敏芯微电子技术股份有限公司 湿度感测结构、湿度传感器及湿度感测结构的制作方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001090732A2 (fr) * 2000-05-10 2001-11-29 Matheson Tri-Gas, Inc. Appareil et procede de detection d'humidite de type a impedance capacitive
US20060186901A1 (en) * 2005-02-24 2006-08-24 Denso Corporation Moisture sensor device and self-diagnosing method therefor
US20070131020A1 (en) * 2005-12-08 2007-06-14 Denso Corporation Humidity sensor with setting member for setting maximum amount of moisture in humidity sensitive member
CN101329291A (zh) * 2007-06-20 2008-12-24 中国科学院微电子研究所 一种气敏传感器
CN101792112A (zh) * 2010-03-03 2010-08-04 北京大学 一种基于表面增强拉曼散射活性基底的微流控检测器件
US20100307238A1 (en) * 2009-06-05 2010-12-09 The Governors Of The University Of Alberta Humidity sensor and method of manufacturing the same
US20110179861A1 (en) * 2008-07-16 2011-07-28 Commissariat A L'energie Atomique Et Aux Ene Alt Capacitive humidity detector with nanoporous hydrophilic dielectric
CN102405409A (zh) * 2008-12-23 2012-04-04 3M创新有限公司 具有微孔有机硅材料的有机化学传感器
CN102507664A (zh) * 2011-11-08 2012-06-20 浙江大学 一种导电高分子复合纳米纤维电阻型湿度传感器及其制备方法
CN103308569A (zh) * 2013-05-14 2013-09-18 哈尔滨工业大学 基于正弦波激励的单芯片集成式碳纳米管湿度传感器
CN103630582A (zh) * 2013-12-11 2014-03-12 江苏物联网研究发展中心 一种mems湿度传感器及制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1164933C (zh) * 2002-01-11 2004-09-01 东南大学 电容型湿度测量装置
US8357958B2 (en) * 2004-04-02 2013-01-22 Silicon Laboratories Inc. Integrated CMOS porous sensor
JP5005702B2 (ja) * 2005-11-17 2012-08-22 エヌエックスピー ビー ヴィ 湿度センサー
CN102070118A (zh) * 2010-10-26 2011-05-25 南京工业大学 金属氧化物半导体纳米薄膜气体传感器用微加热板
CN102253091A (zh) * 2011-04-19 2011-11-23 东南大学 基于氧化石墨烯的电容式相对湿度传感器
CN102262107A (zh) * 2011-04-20 2011-11-30 东南大学 微电子机械系统电容式相对湿度传感器
CN102426176B (zh) * 2011-11-18 2013-03-27 南京工业大学 一种气体传感器及其制造工艺
CN102798403B (zh) * 2012-08-21 2014-10-22 江苏物联网研究发展中心 Mems薄膜电容式多参数传感器的集成制造方法
CN102944325B (zh) * 2012-11-29 2014-03-12 东南大学 一种无源无线温、湿度集成传感器
CN103213942B (zh) * 2013-04-08 2016-03-23 东南大学 一种无源无线电容式湿度传感器的制备方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001090732A2 (fr) * 2000-05-10 2001-11-29 Matheson Tri-Gas, Inc. Appareil et procede de detection d'humidite de type a impedance capacitive
US20060186901A1 (en) * 2005-02-24 2006-08-24 Denso Corporation Moisture sensor device and self-diagnosing method therefor
US20070131020A1 (en) * 2005-12-08 2007-06-14 Denso Corporation Humidity sensor with setting member for setting maximum amount of moisture in humidity sensitive member
CN101329291A (zh) * 2007-06-20 2008-12-24 中国科学院微电子研究所 一种气敏传感器
US20110179861A1 (en) * 2008-07-16 2011-07-28 Commissariat A L'energie Atomique Et Aux Ene Alt Capacitive humidity detector with nanoporous hydrophilic dielectric
CN102405409A (zh) * 2008-12-23 2012-04-04 3M创新有限公司 具有微孔有机硅材料的有机化学传感器
US20100307238A1 (en) * 2009-06-05 2010-12-09 The Governors Of The University Of Alberta Humidity sensor and method of manufacturing the same
CN101792112A (zh) * 2010-03-03 2010-08-04 北京大学 一种基于表面增强拉曼散射活性基底的微流控检测器件
CN102507664A (zh) * 2011-11-08 2012-06-20 浙江大学 一种导电高分子复合纳米纤维电阻型湿度传感器及其制备方法
CN103308569A (zh) * 2013-05-14 2013-09-18 哈尔滨工业大学 基于正弦波激励的单芯片集成式碳纳米管湿度传感器
CN103630582A (zh) * 2013-12-11 2014-03-12 江苏物联网研究发展中心 一种mems湿度传感器及制备方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113670994A (zh) * 2021-08-26 2021-11-19 南京高华科技股份有限公司 基于相位检测原理的mems湿度传感器及制备方法
CN114123861A (zh) * 2021-11-23 2022-03-01 吉林大学 一种低频振动环境的宽频域振动能采集装置及制备方法
CN114123861B (zh) * 2021-11-23 2022-08-16 吉林大学 一种低频振动环境的宽频域振动能采集装置及制备方法

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