WO2015078909A1 - Procédé de production d'un composant optoélectronique - Google Patents

Procédé de production d'un composant optoélectronique Download PDF

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Publication number
WO2015078909A1
WO2015078909A1 PCT/EP2014/075656 EP2014075656W WO2015078909A1 WO 2015078909 A1 WO2015078909 A1 WO 2015078909A1 EP 2014075656 W EP2014075656 W EP 2014075656W WO 2015078909 A1 WO2015078909 A1 WO 2015078909A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
optoelectronic
converter material
component
semiconductor chip
Prior art date
Application number
PCT/EP2014/075656
Other languages
German (de)
English (en)
Inventor
Matthias Wolf
Stephan Blaszczak
Dirk Becker
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2015078909A1 publication Critical patent/WO2015078909A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil

Definitions

  • a method of manufacturing an optoelectronic component relates to a method herstel ⁇ len an optoelectronic component according to claim. 1
  • Chip-on-board arrangement is called. It is known, the optoelectronic semiconductor chips, for example
  • LED chips can be embedded in a converter ⁇ material, which serves to convert from the optoelectronic semiconductor chips seen to convert electromagnetic radiation having a wavelength from the blue spectral range in white light.
  • a method of manufacturing an optoelectronic device comprises the steps of disposing an optoelectronic semiconductor chip on an upper surface of a substrate and for arranging a converter material on top of the sub ⁇ strats by a printing method or a Formverfah ⁇ proceedings such that the optoelectronic semiconductor chip is covered by the converter material ,
  • This process made it ⁇ the fabrication of a optoelectronic component, wherein a wavelength of a light emitted by the optoelectronic semiconductor chip of the optoelectronic component electromagnetic radiation is converted by the converter material of the optoelectronic component.
  • the method is advantageously simple and time ⁇ saving feasible and is suitable for parallel processing of a plurality of optoelectronic devices. This allows for use of the method for cost-Mas ⁇ sencer of optoelectronic devices.
  • the Konverterma ⁇ TERIAL is arranged by means of a stencil printing process on the upper ⁇ side of the substrate.
  • the stencil printing process is simple and inexpensive to carry out.
  • the stencil printing method makes it possible in particular to simultaneously arrange converter material for a plurality of optoelectronic components.
  • the Konverterma ⁇ TERIAL is placed on top of the substrate by means of transfer molding, injection molding or compression molding.
  • ⁇ as these are also molding process inexpensive and easy to perform and suitable for parallel processing a plurality of optoelectronic components.
  • a plurality of optoelectronic semiconductor chip is placed on top of the sub ⁇ strats. In this case, each of the optoelectronic semiconductor chips is covered by the converter material.
  • the method further comprises a further step for dividing the substrate in order to obtain a plurality of optoelectronic components.
  • the method thereby enables a parallel production of a plurality of optoelectronic components. As a result, the production costs per individual optoelectronic component can advantageously be significantly reduced.
  • a dam raised above the upper side of the substrate is arranged on the upper side of the substrate.
  • the converter material is then placed in a portion of the top of the substrate defined by the dam.
  • the dam is angeord ⁇ net by a dosing on the top of the substrate.
  • the dam can be arranged by a Nadeldosier Kunststoffe on top of the substrate. The method thereby advantageously allows the application of a dam with a freely selectable geometry in many areas, which allows adaptation and optimization of the method and the optoelectronic component obtainable by the method to a specific application.
  • a depression is created on the upper side of the substrate prior to arranging the optoelectronic semiconductor chip.
  • the optoelectronic semiconductor chip is then arranged in the recess.
  • the Converter material is at least partially disposed in the recess.
  • the recess provided on the upper side of the substrate can prevent a running of the converter material on the upper side of the substrate or a fraying of the edges of the converter material arranged on the upper side. This allows, for example, a Verwen ⁇ tion of a low-viscosity converter material.
  • the recess is created in a laminated onto the top of the substrate Die ⁇ lektrikum.
  • the method is thereby particularly simple and inexpensive to carry out.
  • the depression can be formed, for example, as an opening present in the dielectric prior to lamination onto the substrate. In this case, no separate geson ⁇ derten process steps are required for the creation of the recess at the top of the substrate.
  • the depression is created in a paint applied to the top of the substrate.
  • the paint can be for example a solder mask.
  • the sheep ⁇ evaporation of the recess on the upper side of the substrate can be combined with walls ⁇ ren anyway necessary process steps in this case, whereby the method is simple and economical feasible.
  • the substrate is designed as a printed circuit board.
  • the substrate in this case can also be used for electrically contacting the optoelectronic semiconductor chip and for electrically connecting the optoelectronic semiconductor chip to further optoelectronic semiconductor chips of the optoelectronic component.
  • 1 is a sectional side view of a first opto ⁇ electronic device.
  • FIG. 2 is a plan view of the first optoelectronic component
  • 3 is a plan view of a first component group with a plurality of the first optoelectronic components; 4 shows a sectional side view of a second opto ⁇ electronic component.
  • Figure 5 is a plan view of the second optoelectronic Bauele ⁇ ment.
  • FIG. 6 is a sectional side view of a third opto ⁇ electronic component.
  • FIG. 7 is a sectional side view of a fourth opto-electronic device.
  • Fig. 1 is a schematic sectional side view of egg ⁇ nes first optoelectronic component 10.
  • Fig. 2 shows a slightly schematized plan view of the first optoelectronic component 10.
  • the first opto-electronic Bauele ⁇ element 10 can also serve as chip-on-board component or multi-chip light kernel.
  • the first opto-electro ⁇ African component 10 may be provided to emit electromagnetic radiation having a wavelength ⁇ diagram of the visible spectral range (visible light).
  • the first opto-electronic device 10 can be seen ⁇ for example, to be buildin ⁇ Untitled means of a holder in a luminaire.
  • the first opto-electronic device 10 includes a sub ⁇ strat 100 having a top side 110.
  • the top 110 of the sub strats ⁇ 100 is substantially planar.
  • the substrate 100 may be formed, for example, as a printed circuit board, in particular as a printed circuit board with ceramic or metal core.
  • On the upper side 110 of the substrate 100 one or meh ⁇ eral electrical contact surfaces may be formed 120th
  • three optoelectronic semiconductor ⁇ chips 200 are disposed on the upper surface 110 of the substrate 100th
  • this number is chosen only as an example. There could also be fewer or more than three optoelectronic semiconductor chips 200.
  • the optoelectronic semiconductor chips 200 are designed to generate electromagnetic radiation.
  • the opto ⁇ electronic semiconductor chips 200 may be, for example light emitting diode chips (LED chips).
  • the optoelectronic semiconductor chip 200 may be formed as a surface-emitting semiconductor chip ⁇ or as volumenemittierende semiconductor chips off.
  • the optoelectronic semiconductor chips 200 may be formed, for example, as volume-emitting sapphire chips.
  • Each optoelectronic semiconductor chip 200 has a top surface 210 and a top surface 210 of the opposing sub ⁇ page 220.
  • the optoelectronic semiconductor chip 200 are such on the top surface 110 of the substrate 100 angeord ⁇ net that the bottoms 220 of the optoelectronic semiconductor chip face 200 of the top 110 of the substrate 100th If the optoelectronic semiconductor chips 200 are designed as surface emitting semiconductor chips, then the upper sides 210 of the optoelectronic semiconductor chips 200 can emit radiation emission surfaces of the optoelectronic Semiconductor chips 200 form. If the optoelectronic semiconductor chip 200 are formed as volumenemittierende semiconductor chip, the optoelectronic semiconductor ⁇ semiconductor chip can emit electromagnetic radiation 200 at the top 210 and to other surfaces of the optoelectronic semiconductor chip 200th
  • Each optoelectronic semiconductor chip 200 has electrical contacts which are electrically conductively connected to electrical contacts on the Obersei ⁇ te 110 of the substrate 100th
  • the electrical contacts of the optoelectronic semiconductor chips 200 may be arranged, for example, on the undersides 220 of the optoelectronic semiconductor chips 200 and connected via solder connections to the electrical contacts on the top side 110 of the substrate 100.
  • the electrical contacts of the optoelectronic semiconductor chips 200 can also be by means of bonding wires or in another way
  • the electrical ⁇ 's contact surfaces 120 on the top 110 of the substrate 100 are electrically conductively connected to the optoelectronic semiconductor chip 200 ver ⁇ connected via at the top 110 of the substrate 100 or in ⁇ nergur of the substrate 100 arranged conductor paths and serve for external electrical contacting of the first optoelectronic Component 10.
  • the opto ⁇ electronic semiconductor chip 200 arranged on the upper side 110 of the substrate 100 are covered by a converter material 300.
  • the converter material 300 covers the upper sides 210 of the optoelectronic semiconductor chips 200 and side surfaces of the optoelectronic semiconductor chips 200 extending between the upper sides 210 and the lower sides 220.
  • the optoelectronic semiconductor chips 200 are thus at least partially embedded in the converter material 300.
  • the converter material 300 is provided to convert a wavelength of electromagnetic radiation emitted by the optoelectronic semiconductor chips 200.
  • the optoelectronic semiconductor chip 200 may be formed ⁇ example as to emit electromagnetic radiation having a wavelength in the blue or ultraviolet spectral range.
  • the converter material 300 may be designed to convert this electromagnetic radiation with ei ⁇ ner wavelength from the blue or ultraviolet spectral range in white light.
  • the converter material 300 may comprise a matrix material and converter particles embedded in the matrix material.
  • the matrix material may for example comprise a silicone.
  • the converter particles embedded in the matrix material may comprise, for example, an organic or an inorganic phosphor.
  • the converters particles may also have Quan ⁇ ten discern.
  • the converter material 300 After arranging the opto ⁇ electronic semiconductor chip 200 at the top 110 of the Substrate 100 by means of a printing method or a form ⁇ method on the upper side 110 of the substrate 100 angeord ⁇ net.
  • a printing method in particular, a Template ⁇ nendruckbacter can be used.
  • a molding method for example, a transfer molding method (transfer molding), an injection molding method (injection molding) or a compression molding method (compression molding) can be used. Both a printing method and a molding method make it possible to arrange the converter material 300 directly on the top side 110 of the substrate 100 and thereby embed the optoelectronic semiconductor chips 200 in the converter material 300.
  • the converter material 300 can be applied directly with the desired geometry, which the converter material 300 should have after the completion of the production of the first optoelectronic component 10.
  • a leveling or other deformation of the converter material 300 according to the on ⁇ arrange the converter material 300 on the top 110 of the substrate 100 is not usually required.
  • difficulties and problems associated with such forming are thereby avoided.
  • Example ⁇ as preventing unwanted and uncontrolled Sedimentati ⁇ on of in the matrix material of the converter material 300 a ⁇ bedded Converter particles.
  • the first component grouping 15 comprises several of the first optoelectronic components 10 illustrated in FIGS. 1 and 2.
  • this 16 comprises the first optoelectronic component Components 10, which are arranged in egg ⁇ ner quadratic 4> ⁇ 4 arrangement.
  • the first component group 15 could also comprise a different number of first optoelectronic components 10, which are arranged in another square, rectangular or other arrangement.
  • the substrates 100 of the first opto-electronic components 10 of the first composite component 15 are integrally formed together as a common ⁇ men usedd total substrate.
  • the entire substrate can be divided along separation regions 130 into the individual substrates 100 of the individual optoelectronic components 10 of the first component assembly 15, whereby the first optoelectronic components 10 of the first component assembly 15 are separated.
  • the separation regions 130 extend in the exemplary matrix arrangement of the first opto-electronic components 10 of the first component composite 15 ent ⁇ long crossed straight lines between the first opto-electronic components 10.
  • scorings or grooves may be strats provided on the top 110 of the Automatsub-. However, this is not necessarily erfor ⁇ sary.
  • the dividing of the total substrate into the individual substrates 100 of the individual first optoelectronic components 10 in the separating regions 130 can be carried out, for example, by sawing or breaking.
  • the production of the first optoelectronic components 10 of the first component composite 15 can take place jointly and in parallel.
  • ⁇ sondere can take place arranging the converter material 300 on the top surfaces 110 of the substrates 100 of the individual first optoelectronic components 10 of the first composite component 15 with all of the first opto-electronic devices 10 of the first composite component 15 simultaneously.
  • the parallel processing of the first opto-electronic components 10 of the first component 15 is a composite kos ⁇ -effective mass production of the first opto-electronic elements 10 is made possible.
  • a scraping ⁇ lone can be used, for example, has a suitable opening in the region of each first optoelekt ⁇ tronic device 10 of the first composite components 15th If arranging the Converter material 300 by means of a molding process, so the overall substrate of the first component composite 15 may be placed in a mold for this purpose, which comprises for each first opto ⁇ electronic component 10 of the first component composite 15 an appropriate cavity for the converter material 300 on ⁇ .
  • Fig. 4 is a schematic sectional side view of egg ⁇ nes second optoelectronic component is 20.
  • Fig. 5 shows a simple schematic plan view of the second optoelekt ⁇ tronic device 20.
  • the second optoelectronic Bauele ⁇ element 20 has large similarities with the first optoelectronic component 10 of the Figures 1 and 2.
  • Components of the second optoelectronic component 20 which correspond to components present in the first optoelectronic component 10 are provided with the same reference symbols in FIG. 4 as in FIGS. 1 and 2 and will not be described again in detail below. In the following, only the differences between the second optoelectronic component 20 and the first optoelectronic component 10 as well as the differences between the methods for producing the optoelectronic components 10, 20 will be explained.
  • the second optoelectronic component 20 differs from the first opto-electronic device 10 in that a on the Obersei ⁇ te 110 of the substrate 100 of raised dam 400 is disposed on the top surface 110 of the substrate 100th
  • the dam 400 annularly surrounds the optoelectronic semiconductor chip 200 arranged on the upper side 110 of the substrate 100.
  • the dam 400 delimits a circular-disk-shaped section of the top side 110 of the substrate 100.
  • the section of the top side 110 of the substrate 100 delimited by the dam 400 could also have a rectangular or other shape exhibit.
  • the dam 400 may have, for example, a plastic material ⁇ .
  • the dam 400 comprises a material that for by the second optoelectronic component 20 emit ⁇ oriented electromagnetic radiation has a high reflectivity.
  • the dam 400 is placed in the preparation of the second optoelectronic component 20 prior to placing the converter mate rials ⁇ 300 on the top 110 of the substrate 100th Disposing the dam 400 on the top 110 of the sub ⁇ strats 100 can take place either before or after the arrangement of the optoelectronic semiconductor chip 200 on the top 110 of the substrate 100th
  • the positioning of the dam 400 on the upper side 110 of the substrate 100 can be carried out, for example, by a dosing method, for example by a needle dosing method.
  • the converter material 300 is arranged on the upper side 110 of the substrate 100 by means of a printing method or a molding method in the section delimited by the dam 400.
  • the printing method or molding method used for assembly of the Konvertermateri ⁇ 300 may correspond to the method used to prepare the first optoelectronic component 10th
  • the converter material 300 is merely in the circumscribed by the dam 400 portion of the top 110 of the substrate 100 disposed ⁇ . This ensures that the disposed on the upper ⁇ page 110 of the substrate 100 of the second optoelectronic device 20 converter material 300 has a sharply defined outer contour.
  • the second optoelectronic component 20 can also be produced simultaneously with a plurality of further second optoelectronic components 20 in a component combination.
  • Fig. 6 shows a schematic sectional side view of egg ⁇ nes third optoelectronic component 30.
  • the third optoelectronic component 30 has great similarities with the first optoelectronic component 10 of FIGS. 1 and 2.
  • Components of the third optoelectronic component 30 which correspond to components present in the first optoelectronic component 10 are provided with the same reference symbols in FIG. 6 as in FIGS. 1 and 2 and will not be described again in detail below.
  • the third optoelectronic component 30 differs from the first optoelectronic component 10 in that the substrate 100 of the third optoelectronic component 30 has a recess 510 on its upper side 110.
  • the recess 510 is formed in a dielectric 500, which forms the upper side 110 of the substrate 100.
  • the dielectric 500 may be laminated, for example, a core of the substrate 100 on ⁇ .
  • the recess 510 may be formed by an opening formed in the dielectric prior to lamination of the dielectric 500.
  • the recess 510 may also have been created only after the lamination of the dielectric 500.
  • the optoelectronic semiconductor chips 200 of the third opto ⁇ electronic component 30 are arranged in the formed on the upper side 110 of the substrate 100 recess 510 net. Also, the optoelectronic semiconductor chip 200 be ⁇ covering converter material 300 is at least partially disposed in the recess ⁇ 510 at the top 110 of the substrate 100th Placing the converter material 300 may be accomplished by a printing method or a molding method in which herstel ⁇ development of the third opto-electronic device 30 is again similar to that for preparing the first optoelectronic component 10 used method corresponds.
  • the converter material 300 is, however, disposed in the recess 510 at the Obersei ⁇ te 110 of the substrate 100th This will relievege ⁇ represents that arranged on the top 110 of the substrate 100 of the third optoelectronic component 30 converter material 300 has sharply defined outer contours.
  • the third optoelectronic component 30 can also be produced in a component composite together with a plurality of further third optoelectronic components 30.
  • Fig. 7 shows a schematic sectional side view of egg ⁇ nes fourth optoelectronic component 40.
  • the fourth optoelectronic component 40 has large similarities with the first opto-electronic device 10 of Figures 1 and 2.
  • Components of the fourth optoelectronic component 40 which correspond to components present in the first optoelectronic component 10 are provided with the same reference symbols in FIG. 7 as in FIGS. 1 and 2 and will not be described again in detail below.
  • Fol ⁇ constricting only the differences between the fourth optoelectronic component 40 and the first electro-opto ⁇ African component 10 and the differences between the preparation of the optoelectronic devices 40, 10 genutz- th process are explained.
  • the fourth optoelectronic component 40 differs from the first optoelectronic component 10 in that a lacquer 600 is arranged on the upper side 110 of the substrate 100 in the fourth optoelectronic component 40.
  • the paint 600 may be, for example, a solder resist.
  • the varnish 600 does not cover the top 110 of the substrate 100 entirely, but has a recess which forms a ⁇ Ver indentation 610 at the top 110 of the substrate 100th
  • the optoelectronic semiconductor chips 200 are arranged in the region of this depression 610 on the upper side 110 of the substrate 100.
  • the arrangement of the lacquer 600 on the upper side 110 of the substrate 100 can be used in the production of the fourth optical system.
  • electronic component 40 either before or after arranging the optoelectronic semiconductor chips 200 on the top 110 of the substrate 100 done.
  • Converter material 300 is likewise arranged at least partially in recess 610 on upper side 110 of substrate 100 in fourth optoelectronic component 40.
  • the arranging of the converter material 300, as in the production of the first optoelectronic component 10 can be effected by a printing method or a molding method.
  • the converter material 300 is, however, at least in part ⁇ , in the recess 610 at the top 110 of the sub strats 100 is disposed. This ensures that the converter material 300 on the upper side 110 of the substrate 100 of the fourth optoelectronic component 40 has sharply delimited outer contours.
  • the fourth optoelectronic component 40 may include public ⁇ sam 40 is made in a composite components ⁇ to a plurality of further fourth optoelectronic components.
  • the invention has been further illustrated and described with reference to the preferred Sinsbei ⁇ games. However, the invention is not limited to the disclosed examples. Rather, other variations may be deduced therefrom by those skilled in the art without departing from the scope of the invention. Reference sign list

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un procédé de production d'un composant optoélectronique, comprenant les étapes suivantes: disposition d'une puce à semi-conducteur optoélectronique sur la face supérieure d'un substrat, et disposition d'un matériau convertisseur sur la face supérieure du substrat, au moyen d'un procédé de pressage ou d'un procédé de formage, de façon que la puce à semi-conducteur optoélectronique soit recouverte par le matériau convertisseur.
PCT/EP2014/075656 2013-11-29 2014-11-26 Procédé de production d'un composant optoélectronique WO2015078909A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013224600.5 2013-11-29
DE102013224600.5A DE102013224600A1 (de) 2013-11-29 2013-11-29 Verfahren zum Herstellen eines optoelektronischen Bauelements

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WO2015078909A1 true WO2015078909A1 (fr) 2015-06-04

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Publication number Priority date Publication date Assignee Title
EP1198016A2 (fr) * 2000-10-13 2002-04-17 LumiLeds Lighting U.S., LLC Déposition de couches luminescentes sur des diodes émetteurs de lumière via un pochoir
EP1693904A2 (fr) * 2005-02-18 2006-08-23 Nichia Corporation Dispositif émetteur de lumière avec lentille pour contrôle de caractéristique de distribution de lumière
JP2006313886A (ja) * 2005-04-08 2006-11-16 Nichia Chem Ind Ltd スクリーン印刷で形成したシリコーン樹脂層を有する発光装置
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