WO2015066982A1 - 用于磁控溅射阳极棒的支撑件及包括其的磁控溅射装置 - Google Patents
用于磁控溅射阳极棒的支撑件及包括其的磁控溅射装置 Download PDFInfo
- Publication number
- WO2015066982A1 WO2015066982A1 PCT/CN2014/071416 CN2014071416W WO2015066982A1 WO 2015066982 A1 WO2015066982 A1 WO 2015066982A1 CN 2014071416 W CN2014071416 W CN 2014071416W WO 2015066982 A1 WO2015066982 A1 WO 2015066982A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- support
- rod
- magnetron sputtering
- mounting
- support rod
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
Definitions
- the present invention relates to a coating apparatus, and more particularly to a support for a magnetron sputtering anode rod.
- the invention also relates to a magnetron sputtering apparatus comprising such a support. Background technique
- Magnetron sputtering technology is a commonly used technique in coating, which has the advantages of high film formation rate, low substrate temperature, good film adhesion, and large-area coating.
- anode rod In the vacuum chamber of a cylindrical target magnetron sputtering apparatus, it is necessary to mount an anode rod beside the cylindrical target to produce a uniform film layer on the substrate.
- the anode rod is usually a stainless steel rod which is provided with one end connected to the cavity and the other end supported by a support rod.
- Figure i shows schematically a support rod 110 of the prior art, one end of which is connected to the anode rod 300, and the other end 120 is inserted in the hole 2i0 of the anti-plating strip 200, thereby realizing the support rod 1 10 Supporting action on the anode rod 300.
- this connection manner of the support bar 110 and the anti-plating stopper 200 is not stable, and accidental disengagement often occurs, causing abnormality of the device. Summary of the invention
- the present invention proposes a support member for a magnetron sputtering anode rod, which can firmly connect the support rod and the anti-plating sheet without accidental removal. open.
- the invention also relates to a magnetron sputtering device comprising such a support.
- a support for a magnetron sputtering anode rod comprising: a support rod and an anti-plating baffle capable of being fixedly engaged with the support rod, wherein the first support rod The end is configured as a supporting end that cooperates with the anode rod, and the second end is configured as a mounting end that can be fixedly connected with the mounting hole of the anti-plating baffle to prevent the supporting rod from coming out of the mounting hole of the anti-plating baffle, the mounting end The cross section is reduced relative to the cross section of the body portion of the support rod.
- the support rod and the anti-plating baffle are fixedly mounted together through the mounting holes on the anti-plating baffle, the support rod and the anti-plating sheet are prevented from being disengaged.
- the reduced diameter portion of the mounting end of the support rod is formed Right angle steps.
- the support rod is stably coupled with the mounting hole on the anti-plating baffle through the right-angle step, thereby improving the mounting stability of the support rod.
- the diameter of the mounting hole is greater than or equal to the diameter of the mounting end and the outer diameter of the small dry right angle step.
- the support rod is cylindrical.
- the mounting end of the support rod is cylindrical, and the mounting hole on the anti-plating baffle is a circular hole that matches the mounting end.
- the cylindrical support rod makes it easy to machine.
- the mounting end and the mounting hole of the support rod are also circular, which is not only easy to process but also has no directionality between the support plate and the mounting hole, which facilitates assembly.
- an insulating ring is further disposed between the support end of the support rod and the anode rod.
- the insulating ring is a ceramic material.
- the ceramic insulating ring has high temperature resistance and is not easily aged, and the problem that the polymer insulating ring used in the prior art may be carbonized or deteriorated may be avoided.
- the support rod is a ceramic material.
- the support rod of the ceramic material is more resistant to high temperatures than the stainless steel support rods of the prior art.
- the ceramic material is an alumina ceramic.
- the end of the anode rod mated with the support rod is configured as a hollow structure, and the support end of the support rod is inserted into the hollow structure, An insulating ring is between the support end and the inner wall of the hollow structure.
- a magnetron sputtering apparatus which comprises a support according to the above.
- the invention has the advantages that a mounting hole is arranged on the anti-plating baffle, and the mounting end of the supporting rod is inserted into the mounting hole, thereby achieving the determined connection of the supporting rod and the anti-plating baffle.
- the support rod and the anti-plating strip are prevented from being disengaged.
- the insulating ring uses a ceramic material to increase its high temperature resistance and extend its service life.
- the support rod also uses a ceramic material to improve its high temperature resistance.
- FIG. 1 is a schematic structural view of a support member in the prior art
- Figure 2 is a schematic view showing the structure of a support member according to the present invention.
- Fig. 1 schematically shows the connection relationship between the support rod 10 of the prior art and the anode rod 300 and the anti-plating baffle 200, which will not be described in detail herein.
- Fig. 2 schematically shows a support member 0 for a magnetron sputtering anode rod in accordance with the present invention.
- the support member 10 includes a support rod 11 and an anti-plating stopper 20 that can be fixedly coupled together.
- the first end of the support rod 11 is configured as a mounting end 12, and the cross-sectional dimension of the mounting end 12 is smaller than the cross-sectional dimension of the main body portion 15 of the support rod 11; the second end configuration of the support rod 11
- the support end 13 is mated with the anode rod 30.
- Mounting holes 21 are formed on the anti-plating baffle 20, and the shape of the mounting holes 21 is larger than that of the mounting end 12 of the support bar 11, so that the support bar 11 and the anti-plating baffle 20 can be easily assembled.
- the support rod 11 is made into a cylindrical shape.
- the mounting end 12 and the support end 13 of the support rod 1 are also cylindrically shaped, in this case
- the cross-sectional dimension of the mounting end 12 is smaller than the cross-sectional dimension of the main body portion 15 of the support rod 1 means that its diameter is reduced with respect to the diameter of the main body portion 15 of the support rod 11.
- the mounting hole 21 in the anti-plating baffle 20 is also configured as a circular hole that matches the mounting end 12 of the support bar 1].
- the mounting end 12 may also have other shapes, such as a polygon or the like, and the mounting hole 21 has the same shape as the mounting end 12, but the other shapes of the mounting end 12 and the mounting hole 21 are inconvenient to assemble, so it is preferred here.
- the mounting end 12 is configured in a cylindrical shape while the mounting hole 21 is circular.
- the tapered portion of the mounting end 12 forms a right-angled step 14, and the diameter of the mounting hole 21 is greater than or equal to the diameter of the mounting end 12 and the outer diameter of the right-angled step 14.
- the support rod 11 is firmly coupled to the plating stopper 20 by the engagement of the right angle step 14 with the mounting hole 21.
- the support rod 11 needs to be lifted, and then the mounting end 12 of the support rod is inserted into the mounting hole 21 of the plating resist 20 to achieve assembly.
- the lower end of the anode rod 30 constitutes a hollow structure 32.
- the support end 3 of the support rod 1 1 is inserted into the hollow structure 32 to effect the support of the anode rod 30.
- An insulating ring 3 is also disposed between the support end 13 of the support rod 11 and the anode rod 30.
- the insulating ring 31 may be composed of a ceramic material such as an alumina ceramic.
- the insulating ring 3 of the ceramic material has better high temperature resistance than the insulating ring of the polyetheretherketone (PEEK) material of the prior art, and can effectively prevent the carbonization of the insulating ring 31 at a high temperature.
- the ceramic insulating ring 31 has a longer service life.
- the support rod 11 may also be a ceramic material such as alumina ceramic to improve the high temperature resistance of the support rod.
- the present invention also relates to a magnetron sputtering apparatus (not shown) including the support member 10 as shown in Fig. 2, which has a service life of the magnetron sputtering apparatus since it uses the support member 10 according to the present invention. It will grow accordingly, and the probability of the support bar 11 being separated from the anti-plating baffle 20 is also smaller.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/241,338 US20150122643A1 (en) | 2013-11-06 | 2014-01-24 | Supporting member for magnetron sputtering anode bar and magnetron sputtering device including the same |
| GB1609343.7A GB2539326B (en) | 2013-11-06 | 2014-01-24 | Supporting Member for Magnetron Sputtering Anode Bar and Magnetron Sputtering Device Including the Same |
| EA201690925A EA033634B1 (ru) | 2013-11-06 | 2014-01-24 | Опорный элемент для анодной штанги магнетронного распылителя и содержащее его магнетронное распылительное устройство |
| KR1020167014370A KR20160082525A (ko) | 2013-11-06 | 2014-01-24 | 마그네트론 스퍼터링 어노드 바를 위한 지지부재 및 이를 포함하는 마그네트론 스퍼터링 장치 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310545471.6A CN103602954B (zh) | 2013-11-06 | 2013-11-06 | 用于磁控溅射阳极棒的支撑件及包括其的磁控溅射装置 |
| CN201310545471.6 | 2013-11-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2015066982A1 true WO2015066982A1 (zh) | 2015-05-14 |
Family
ID=50121215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2014/071416 Ceased WO2015066982A1 (zh) | 2013-11-06 | 2014-01-24 | 用于磁控溅射阳极棒的支撑件及包括其的磁控溅射装置 |
Country Status (5)
| Country | Link |
|---|---|
| KR (1) | KR20160082525A (zh) |
| CN (1) | CN103602954B (zh) |
| EA (1) | EA033634B1 (zh) |
| GB (1) | GB2539326B (zh) |
| WO (1) | WO2015066982A1 (zh) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1252417A (en) * | 1985-04-04 | 1989-04-11 | Juan A. Rostworowski | Reactive planar magnetron sputtering of sio.sub.2 |
| US5988103A (en) * | 1995-06-23 | 1999-11-23 | Wisconsin Alumni Research Foundation | Apparatus for plasma source ion implantation and deposition for cylindrical surfaces |
| CN1737188A (zh) * | 2004-08-20 | 2006-02-22 | Jds尤尼弗思公司 | 用于溅镀镀膜的阳极 |
| CN201292401Y (zh) * | 2008-10-21 | 2009-08-19 | 钰衡科技股份有限公司 | 一种快拆式溅镀阴极 |
| JP2011144434A (ja) * | 2010-01-16 | 2011-07-28 | Institute Of National Colleges Of Technology Japan | マルチターゲットスパッタ装置 |
| CN102822381A (zh) * | 2010-03-31 | 2012-12-12 | 野马真空系统股份有限公司 | 圆柱形旋转磁控管溅射阴极装置以及使用射频发射来沉积材料的方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6376807B1 (en) * | 1999-07-09 | 2002-04-23 | Applied Materials, Inc. | Enhanced cooling IMP coil support |
| US20090308732A1 (en) * | 2008-06-17 | 2009-12-17 | Applied Materials, Inc. | Apparatus and method for uniform deposition |
| CN201355633Y (zh) * | 2008-12-27 | 2009-12-02 | 吉奕 | 螺接式对数周期偶极天线 |
-
2013
- 2013-11-06 CN CN201310545471.6A patent/CN103602954B/zh not_active Expired - Fee Related
-
2014
- 2014-01-24 EA EA201690925A patent/EA033634B1/ru not_active IP Right Cessation
- 2014-01-24 WO PCT/CN2014/071416 patent/WO2015066982A1/zh not_active Ceased
- 2014-01-24 KR KR1020167014370A patent/KR20160082525A/ko not_active Ceased
- 2014-01-24 GB GB1609343.7A patent/GB2539326B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1252417A (en) * | 1985-04-04 | 1989-04-11 | Juan A. Rostworowski | Reactive planar magnetron sputtering of sio.sub.2 |
| US5988103A (en) * | 1995-06-23 | 1999-11-23 | Wisconsin Alumni Research Foundation | Apparatus for plasma source ion implantation and deposition for cylindrical surfaces |
| CN1737188A (zh) * | 2004-08-20 | 2006-02-22 | Jds尤尼弗思公司 | 用于溅镀镀膜的阳极 |
| CN201292401Y (zh) * | 2008-10-21 | 2009-08-19 | 钰衡科技股份有限公司 | 一种快拆式溅镀阴极 |
| JP2011144434A (ja) * | 2010-01-16 | 2011-07-28 | Institute Of National Colleges Of Technology Japan | マルチターゲットスパッタ装置 |
| CN102822381A (zh) * | 2010-03-31 | 2012-12-12 | 野马真空系统股份有限公司 | 圆柱形旋转磁控管溅射阴极装置以及使用射频发射来沉积材料的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2539326A (en) | 2016-12-14 |
| GB201609343D0 (en) | 2016-07-13 |
| CN103602954A (zh) | 2014-02-26 |
| CN103602954B (zh) | 2016-02-24 |
| EA201690925A1 (ru) | 2016-08-31 |
| GB2539326B (en) | 2019-07-03 |
| EA033634B1 (ru) | 2019-11-12 |
| KR20160082525A (ko) | 2016-07-08 |
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