WO2015039974A3 - Cellule de mémoire non volatile, procédé de programmation, d'effacement et de lecture d'une telle cellule et dispositif de mémoire non volatile - Google Patents
Cellule de mémoire non volatile, procédé de programmation, d'effacement et de lecture d'une telle cellule et dispositif de mémoire non volatile Download PDFInfo
- Publication number
- WO2015039974A3 WO2015039974A3 PCT/EP2014/069544 EP2014069544W WO2015039974A3 WO 2015039974 A3 WO2015039974 A3 WO 2015039974A3 EP 2014069544 W EP2014069544 W EP 2014069544W WO 2015039974 A3 WO2015039974 A3 WO 2015039974A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- volatile memory
- cell
- memory cell
- programming
- deleting
- Prior art date
Links
- 230000014759 maintenance of location Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
Abstract
La présente invention propose une cellule de mémoire non volatile et un dispositif de mémoire non volatile fonctionnant avec une faible tension de programmation et d'effacement, avec une très bonne rétention en mémoire. De plus, la cellule de mémoire non volatile comprend un circuit de sortie permettant une lecture rapide et à faible puissance des informations de la cellule de mémoire.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1359053A FR3011123B1 (fr) | 2013-09-20 | 2013-09-20 | Cellule de memoire non volatile, procede de programmation d'effacement et de lecture d'une telle cellule et dispositif de memoire non volatile |
FR1359053 | 2013-09-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2015039974A2 WO2015039974A2 (fr) | 2015-03-26 |
WO2015039974A3 true WO2015039974A3 (fr) | 2015-07-16 |
Family
ID=50231252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2014/069544 WO2015039974A2 (fr) | 2013-09-20 | 2014-09-12 | Cellule de mémoire non volatile, procédé de programmation, d'effacement et de lecture d'une telle cellule et dispositif de mémoire non volatile |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR3011123B1 (fr) |
WO (1) | WO2015039974A2 (fr) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5272368A (en) * | 1991-05-10 | 1993-12-21 | Altera Corporation | Complementary low power non-volatile reconfigurable EEcell |
US5587945A (en) * | 1995-11-06 | 1996-12-24 | Advanced Micro Devices, Inc. | CMOS EEPROM cell with tunneling window in the read path |
US5892709A (en) * | 1997-05-09 | 1999-04-06 | Motorola, Inc. | Single level gate nonvolatile memory device and method for accessing the same |
US20090065838A1 (en) * | 2007-09-12 | 2009-03-12 | Takeshi Nagao | Semiconductor memory device and method of manufacturing the same |
US20120037971A1 (en) * | 2010-08-13 | 2012-02-16 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and method of forming the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB979384A (en) | 1962-02-23 | 1965-01-01 | Cav Ltd | Reciprocating liquid fuel pumps |
US4203158A (en) | 1978-02-24 | 1980-05-13 | Intel Corporation | Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same |
US5029130A (en) | 1990-01-22 | 1991-07-02 | Silicon Storage Technology, Inc. | Single transistor non-valatile electrically alterable semiconductor memory device |
US5780341A (en) | 1996-12-06 | 1998-07-14 | Halo Lsi Design & Device Technology, Inc. | Low voltage EEPROM/NVRAM transistors and making method |
-
2013
- 2013-09-20 FR FR1359053A patent/FR3011123B1/fr not_active Expired - Fee Related
-
2014
- 2014-09-12 WO PCT/EP2014/069544 patent/WO2015039974A2/fr active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5272368A (en) * | 1991-05-10 | 1993-12-21 | Altera Corporation | Complementary low power non-volatile reconfigurable EEcell |
US5587945A (en) * | 1995-11-06 | 1996-12-24 | Advanced Micro Devices, Inc. | CMOS EEPROM cell with tunneling window in the read path |
US5892709A (en) * | 1997-05-09 | 1999-04-06 | Motorola, Inc. | Single level gate nonvolatile memory device and method for accessing the same |
US20090065838A1 (en) * | 2007-09-12 | 2009-03-12 | Takeshi Nagao | Semiconductor memory device and method of manufacturing the same |
US20120037971A1 (en) * | 2010-08-13 | 2012-02-16 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and method of forming the same |
Also Published As
Publication number | Publication date |
---|---|
WO2015039974A2 (fr) | 2015-03-26 |
FR3011123B1 (fr) | 2016-12-23 |
FR3011123A1 (fr) | 2015-03-27 |
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