WO2015029264A1 - 反応性スパッタ装置 - Google Patents

反応性スパッタ装置 Download PDF

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Publication number
WO2015029264A1
WO2015029264A1 PCT/JP2013/076974 JP2013076974W WO2015029264A1 WO 2015029264 A1 WO2015029264 A1 WO 2015029264A1 JP 2013076974 W JP2013076974 W JP 2013076974W WO 2015029264 A1 WO2015029264 A1 WO 2015029264A1
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Prior art keywords
region
target
sputtered particles
unit
cathode
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PCT/JP2013/076974
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English (en)
French (fr)
Japanese (ja)
Inventor
応樹 武井
辰徳 磯部
清田　淳也
哲宏 大野
重光 佐藤
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株式会社 アルバック
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Application filed by 株式会社 アルバック filed Critical 株式会社 アルバック
Priority to KR1020167008054A priority Critical patent/KR101700341B1/ko
Priority to JP2014547590A priority patent/JP5801500B2/ja
Priority to CN201380079134.0A priority patent/CN105518179B/zh
Priority to DE112013007385.4T priority patent/DE112013007385T5/de
Priority to KR1020177001744A priority patent/KR102141130B1/ko
Publication of WO2015029264A1 publication Critical patent/WO2015029264A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion

Definitions

  • the technology of the present disclosure relates to a reactive sputtering apparatus that forms a compound film on a large substrate.
  • Flat panel displays such as liquid crystal displays and organic EL displays include a plurality of thin film transistors that drive display elements.
  • the thin film transistor has a channel layer, and a material for forming the channel layer is an oxide semiconductor such as indium gallium zinc oxide (IGZO).
  • IGZO indium gallium zinc oxide
  • a substrate on which a channel layer is to be formed is enlarged, and as a sputtering apparatus for forming a film on a large substrate, for example, as described in Patent Document 1, a plurality of targets are arranged along one direction. A sputtering device is used.
  • the region facing the substrate in the above-described sputtering apparatus includes a target region that is the target surface itself and a non-target region that is a region sandwiched between the two target surfaces.
  • the state of the generated plasma is different from each other. Therefore, in the substrate, the state of the sputtered particles that reach the portion facing the target region and the portion facing the non-target region, for example, The amount of sputtered particles reaching and the amount of oxygen contained in the sputtered particles are different.
  • the electrical characteristics required for the IGZO film vary within the plane of the IGZO film formed on the substrate.
  • the characteristics of the thin film transistor are greatly influenced by the state of the IGZO film that forms the interface with the gate oxide film. Therefore, if the above-described variation occurs in the IGZO film that is the channel layer, the operations of each of the plurality of thin film transistors vary within the plane of the substrate.
  • Such variations in film characteristics are not limited to the case where the material for forming the thin film is IGZO, but by sputtering using a plurality of erosion regions arranged in a region facing the substrate, a reactive sputtering method is applied to one substrate. This also occurs when a compound film such as an oxide film or a nitride film is formed.
  • One aspect of the reactive sputtering apparatus includes a cathode device that emits sputtered particles toward the formation region of the compound film to be formed on the film formation target.
  • a space facing the formation region is a facing region
  • the cathode device includes a scanning unit that scans an erosion region in the facing region, and the erosion region is formed, and the length in the scanning direction is shorter than the facing region.
  • the scanning unit includes a first end where the sputtered particles first reach out of two ends of the forming region in the scanning direction, and a first end of the forming region in the scanning direction.
  • the erosion area is scanned from the start position where the distance to the first end of the near target is 150 mm or more in the scanning direction toward the facing area.
  • the reactive sputtering apparatus of the technology of the present disclosure when power supply to the target is started, most of the sputtered particles emitted from the target are in the formation region regardless of the incident angle of the sputtered particles. It becomes difficult to reach.
  • the sputtered particles released from the target when electric power is supplied have energy that the sputtered particles have compared to the sputtered particles released from the target at a predetermined time when electric power is continuously supplied.
  • the reaction rate is different from the active species of oxygen. Therefore, when the sputtered particles when power is supplied reach the formation region, a compound film having a film quality different from that formed by the sputtered particles that have reached the substrate thereafter is formed.
  • the distance between the first end of the formation region and the first end of the target is 150 mm or more in the scanning direction, the composition of the film in the molecular layer at the initial stage of formation of the compound film Variations are suppressed. As a result, variations in the characteristics of the compound film at the boundary between the compound film and another film other than the compound film can be suppressed.
  • the erosion region is one of two erosion regions formed on the target, and the two erosion regions are at the start position. , A first erosion region near the first end of the formation region, and a second erosion region far from the first end of the formation region.
  • the cathode device includes a shielding portion disposed between the first end portion of the target and the first end portion of the formation region in the scanning direction at the start position. The shielding unit prevents sputtered particles whose incident angle to the formation region is 30 ° or less from reaching the formation region among the sputtered particles emitted from the first erosion region toward the target.
  • a plurality of sputtered particles emitted in the direction toward the target do not fly toward the second erosion region adjacent to the first erosion region. Therefore, as compared with the plurality of sputtered particles that fly toward the second erosion region, the flight path does not pass through the region where the plasma density is high. Therefore, the probability that the sputtered particles react with the active species contained in the plasma is reduced, and the density of atoms contained in the reaction gas per unit thickness and unit area in the compound film formed in the formation region is reduced. As a result, variations occur in the composition per unit thickness and unit area of the compound film.
  • the smaller the incident angle of the sputtered particles the greater the flight distance of the sputtered particles until the sputtered particles reach the formation region. Therefore, the sputtered particles are in a space beyond the high plasma density region. The number of collisions with particles other than the active species increases. Thereby, since the energy of the sputtered particles constituting the compound film varies, the formed compound film varies in film density. As a result, as the sputtered particles having a smaller incident angle are included in the compound film, the film characteristics of the compound film vary.
  • the shielding unit does not allow sputtered particles having an incident angle of 30 ° or less to reach the substrate, so that the unit thickness or unit area of the compound film Variations in film characteristics can be suppressed.
  • the shielding portion is a first shielding portion that is one of two shielding portions, and the formation is performed in the scanning direction at the start position.
  • the shielding part disposed at a position farther from the formation area than the second end part that is the end part of the target far from the area is the second shielding part.
  • the second shielding portion includes sputtered particles having an incident angle to the formation region of 30 ° or less among sputtered particles emitted from the second erosion region toward a direction opposite to the direction of the target. Do not reach the formation area.
  • the incident angle of the sputtered particles that are emitted from the first erosion region and first reach the formation region and then reach the formation region are also 30 °. Limited to sputtered particles larger than °.
  • the compound film is formed by sputtered particles with a limited incident angle, variations in composition and film density in unit thickness and unit area can be suppressed in the entire thickness direction of the compound film. As a result, variations in film characteristics can be suppressed.
  • the target is one of two targets arranged along the scanning direction, and the two targets are formed at the start position.
  • a first target close to the region, and a second target farther from the formation region than the first target.
  • the second shielding unit has an incident angle of 9 ° or less to the formation region. Certain sputtered particles are not allowed to reach the formation region.
  • the plurality of sputtered particles emitted in the direction opposite to the direction of the target are the second erosion region of the first target and each erosion region of the second target. Fly towards Therefore, the flight path of the plurality of sputtered particles emitted from the first erosion region has a zero vertical magnetic field extending from the other erosion region to the space where the sputtered particles fly before reaching the substrate. It passes through an area that is
  • the second shielding unit does not allow the above-described sputtered particles having an incident angle of 9 ° or less to reach the formation region. A reduction in film density is suppressed.
  • the cathode device is disposed on a side opposite to the formation region with respect to the target, and the magnetic circuit that forms the erosion region on the target;
  • a magnetic circuit scanning unit that scans the magnetic circuit between the first end and the second end of the target in a scanning direction.
  • the magnetic circuit scanning unit arranges the magnetic circuit at a position overlapping the first end of the target in the scanning direction at the start position.
  • the magnetic circuit is formed as compared with the case where the magnetic circuit is disposed at another position between the first end and the second end.
  • the distance between the erosion and the first end of the formation region is the smallest. Therefore, sputtered particles having a larger incident angle reach the vicinity of the first end of the formation region as compared with the case where the magnetic circuit is disposed at another position. As a result, variations in composition and film density in the compound film are further suppressed.
  • the magnetic circuit scanning unit when the scanning unit passes the facing region once through the target, causes the magnetic circuit to pass through the first of the target. Scan once from the end toward the second end.
  • the magnetic circuit scan direction changes with respect to the target scan direction if the magnetic circuit moves between the first end and the second end a plurality of times. Each time, the relative speed of the magnetic circuit with respect to the target changes.
  • the state of the plasma formed on the surface of the target also changes, so the number of sputtered particles emitted toward the formation region also changes. As a result, the thickness of the compound film varies in the target scanning direction.
  • the relative speed of the magnetic circuit with respect to the target does not change, and thus the thickness of the compound film may vary in the scanning direction of the target. It can be suppressed.
  • the cathode device includes a third shielding unit that is disposed between the two targets in the scanning direction.
  • the maximum value of the flight path of the sputtered particles that reach the formation region among the sputtered particles emitted from the erosion region of each target is reduced. Therefore, the maximum value of the number of collisions between the sputtered particles and other particles in the plasma is also reduced. Therefore, the minimum value of the energy possessed by the sputtered particles is increased and the film density of the compound film can be suppressed from decreasing.
  • the cathode device is one of two cathode devices, and in the two cathode devices, in the target forming material of each cathode device Main components are different from each other.
  • the scanning unit scans one of the two cathode devices, the scanning unit does not scan the other cathode device.
  • FIG. 5 is a diagram for explaining an incident angle of sputtered particles that reach a formation region in Test Example 1.
  • FIG. 6 is a diagram for explaining an incident angle of sputtered particles that reach a formation region in Test Example 2.
  • FIG. 10 is a diagram for explaining an incident angle of sputtered particles that reach a formation region in Test Example 3.
  • FIG. 10 is a diagram for explaining an incident angle of sputtered particles that reach a formation region in Test Example 4.
  • FIG. It is a table
  • a first embodiment of the sputtering apparatus will be described with reference to FIGS. Below, the whole structure of a sputtering device, the structure of a sputtering chamber, the structure of a cathode unit, and the effect
  • the compound film formed on the substrate is an indium gallium zinc oxide film (IGZO film) will be described as an example of the sputtering apparatus.
  • IGZO film indium gallium zinc oxide film
  • the carry-in / out chamber 11, the pretreatment chamber 12, and the sputter chamber 13 are arranged along one transfer direction.
  • Each of the three chambers is connected to another chamber adjacent to each other by a gate valve 14.
  • Each of the three chambers is connected to an exhaust unit 15 that exhausts the inside of the chamber, and each of the three chambers is individually decompressed by driving the exhaust unit 15.
  • On the bottom surface of each of the three chambers a film formation lane 16 and a recovery lane 17 that are two lanes extending in parallel with each other in the transport direction are laid.
  • the film formation lane 16 and the recovery lane 17 are composed of, for example, a rail extending along the transport direction, a plurality of rollers arranged along the transport direction, and a plurality of motors that rotate each of the plurality of rollers.
  • the film formation lane 16 conveys the tray T carried into the sputtering apparatus 10 from the carry-in / out chamber 11 toward the sputtering chamber 13, and the recovery lane 17 sputters the tray T carried into the sputtering chamber 13. Transport from the chamber 13 toward the loading / unloading chamber 11.
  • a rectangular substrate S extending toward the front of the paper surface is fixed to the tray T in a standing state.
  • the width of the substrate S is, for example, 2200 mm along the transport direction and 2500 mm toward the front of the page.
  • the carry-in / out chamber 11 conveys the substrate S before film formation, which is carried in from the outside of the sputtering apparatus 10, to the pretreatment chamber 12, and transfers the substrate S after film formation, which is carried in from the pretreatment chamber 12, to the outside of the sputtering apparatus 10. To be taken out.
  • the carry-in / out chamber 11 is brought to atmospheric pressure. Boost the pressure.
  • the carry-in / out chamber 11 Decompresses the interior to the same extent as the interior of the pretreatment chamber 12.
  • the pretreatment chamber 12 performs, for example, a heat treatment or a cleaning treatment on the substrate S before film formation carried into the pretreatment chamber 12 from the carry-in / out chamber 11 as a treatment required for film formation.
  • the pretreatment chamber 12 carries the substrate S carried out from the carry-in / out chamber 11 to the pretreatment chamber 12 into the sputtering chamber 13.
  • the pretreatment chamber 12 carries the substrate S carried out from the sputtering chamber 13 to the pretreatment chamber 12 to the carry-in / out chamber 11.
  • the sputter chamber 13 includes a cathode device 18 that emits sputtered particles toward the substrate S, and a lane changing unit 19 disposed between the film formation lane 16 and the recovery lane 17.
  • the sputtering chamber 13 forms an IGZO film on the substrate S before film formation carried into the sputtering chamber 13 from the pretreatment chamber 12 using the cathode device 18.
  • the sputtering chamber 13 moves the tray T after film formation from the film formation lane 16 to the recovery lane 17 using the lane changing unit 19.
  • the film formation lane 16 of the sputter chamber 13 transports the substrate S carried into the sputter chamber 13 from the pretreatment chamber 12 along the transport direction, and starts forming a thin film on the substrate S.
  • the position of the tray T is fixed in the middle of the film formation lane 16 until it is completed.
  • the position of the edge of the substrate S in the transport direction is also fixed.
  • the gas supply unit 21 of the sputtering chamber 13 supplies a gas used for sputtering into the gap between the tray T and the cathode device 18.
  • the gas supplied from the gas supply unit 21 includes a sputtering gas such as argon gas and a reaction gas such as oxygen gas.
  • the cathode device 18 has one cathode unit 22, and the cathode unit 22 is arranged along a plane facing the surface Sa of the substrate S.
  • the target 23, the backing plate 24, and the magnetic circuit 25 are arranged in this order from the side close to the substrate S.
  • the target 23 is formed in a flat plate shape along a plane facing the substrate S, has a width longer than that of the substrate S in the height direction which is a direction orthogonal to the paper surface, and is smaller than the substrate S in the transport direction. It has a width, for example, about one fifth.
  • the main component is IGZO.
  • 95% by mass of the forming material of the target 23 is IGZO, and preferably 99% by mass or more is IGZO.
  • the backing plate 24 is formed in a flat plate shape along a plane facing the substrate S, and is bonded to a surface that does not face the substrate S by the target 23.
  • a DC power source 26D is connected to the backing plate 24. The DC power supplied from the DC power supply 26 ⁇ / b> D is supplied to the target 23 through the backing plate 24.
  • the magnetic circuit 25 is composed of a plurality of magnetic bodies having different magnetic poles, and forms a magnetron magnetic field on the surface 23a of the target 23 and on the side surface of the target 23 facing the substrate S.
  • the direction along the normal to the surface 23a of the target 23 is the normal direction
  • the density of the plasma generated in the gap between the surface 23a of the target 23 and the surface Sa of the substrate S is formed by the magnetic circuit 25. It becomes the highest in the part where the magnetic field component along the normal direction is 0 (B ⁇ 0) in the magnetron magnetic field.
  • the region where the magnetic field component along the normal direction is zero is a region having a high plasma density.
  • the cathode device 18 includes a scanning unit 27 that moves the cathode unit 22 along one scanning direction.
  • the scanning direction is a direction parallel to the transport direction.
  • the scanning unit 27 includes, for example, a rail extending along the scanning direction, a roller attached to each of two end portions of the cathode unit 22 in the height direction, and a plurality of motors that rotate each of the rollers.
  • the rail of the scanning unit 27 has a width longer than that of the substrate S in the scanning direction.
  • the scanning unit 27 may be embodied as another configuration as long as the cathode unit 22 can be moved along the scanning direction.
  • the scanning unit 27 scans the cathode unit 22 in the facing region R2, which is a space facing the formation region R1 of the IGZO film, by moving the cathode unit 22 along the scanning direction.
  • the entire surface Sa of the substrate S which is an example of a film formation target, is an example of an IGZO film formation region R1.
  • the scanning unit 27 is, for example, the other end in the scanning direction from the start position St that is one end in the scanning direction in the scanning unit 27.
  • the cathode unit 22 is moved along the scanning direction toward the end position En. Thereby, the scanning unit 27 scans the target 23 of the cathode unit 22 in the facing region R2 facing the forming region R1.
  • the direction in which the formation region R1 and the facing region R2 face each other is the facing direction.
  • the distance between the surface Sa of the substrate S and the surface 23a of the target 23 is 300 mm or less, for example, 150 mm.
  • the cathode unit 22 When the cathode unit 22 is disposed at the start position St, of the two ends of the formation region R1 in the scanning direction, the first end Re1 where the sputtered particles first reach and the first end in the scanning direction
  • the distance D1 along the scanning direction between the first end 23e1 of the target 23 close to Re1 is 150 mm or more.
  • the cathode unit 22 When the cathode unit 22 is located at the end position En, of the two ends of the formation region R1 in the scanning direction, the second end Re2 where the sputtered particles reach later and the second end Re2 in the scanning direction.
  • the distance D1 along the scanning direction between the second end 23e2 of the target 23 close to the distance is 150 mm or more.
  • the scanning unit 27 may scan the cathode unit 22 once from the start position St toward the end position En along the scanning direction. Alternatively, the scanning unit 27 may scan the cathode unit 22 from the start position St toward the end position En along the scanning direction, and then scan from the end position En toward the start position St along the scanning direction. . Accordingly, the scanning unit 27 scans the cathode unit 22 twice along the scanning direction. The scanning unit 27 scans the cathode unit 22 a plurality of times between the start position St and the end position En by alternately moving the cathode unit 22 to the start position St and the end position En along the scanning direction. Also good.
  • the number of times the scanning unit 27 scans the cathode unit 22 is changed according to the thickness of the IGZO film. If the conditions other than the number of scanning times of the cathode unit 22 are the same, the larger the thickness of the IGZO film, the larger the scanning unit. The number of times 27 scans the cathode unit 22 is set to a large value.
  • FIG. 3 shows a state in which the cathode unit 22 is arranged at the start position St described in FIG.
  • the plane on which the surface Sa of the substrate S is arranged is the virtual plane Pid, and the straight line perpendicular to the virtual plane Pid is the normal line Lv.
  • a surface 23a which is a side surface facing the substrate S at the target 23 is disposed on one plane parallel to the virtual plane Pid.
  • the magnetic circuit 25 that forms the magnetron magnetic field B on the surface 23 a of the target 23 forms two vertical magnetic field zero regions whose magnetic field components along the normal Lv are 0 (B ⁇ 0) on the surface 23 a of the target 23. .
  • the sputtered particles SP are emitted mainly from the two vertical magnetic field zero regions.
  • the vertical magnetic field zero region close to the first end Re1 of the formation region R1 in the scanning direction is the first erosion region E1
  • the vertical magnetic field zero region far from the first end Re1 is the second. This is the erosion region E2.
  • the magnetic circuit 25 has a width substantially equal to the target 23 in the height direction orthogonal to the paper surface, and has a width of about one third of the target 23 in the scanning direction, for example.
  • the cathode unit 22 includes two shielding plates 28a and 28b that prevent a part of the plurality of sputtered particles SP emitted from the first erosion region E1 and the second erosion region E2 from reaching the substrate S.
  • the two shielding plates 28a and 28b have a width substantially equal to the target 23 in the height direction, and protrude from the surface 23a of the target 23 toward the virtual plane Pid in the width direction orthogonal to the scanning direction.
  • the first shielding plate 28a and the second shielding plate 28b have the same protruding width in the width direction.
  • the 1st shielding board 28a is an example of a 1st shielding part
  • the 2nd shielding board 28b is an example of a 2nd shielding part.
  • the first shielding plate 28a which is one shielding plate, includes a first end Re1 where the sputtered particles SP in the formation region R1 first reach in the scanning direction when the cathode unit 22 is disposed at the start position St. It arrange
  • the second shielding plate 28b which is the other shielding plate is a second shielding plate which is the end of the target 23 far from the first end Re1 of the formation region R1 in the scanning direction when the cathode unit 22 is located at the start position St. It arrange
  • the cathode unit 22 includes a magnetic circuit scanning unit 29 that changes the position of the magnetic circuit 25 with respect to the target 23.
  • the magnetic circuit scanning unit 29 includes, for example, a rail extending along the scanning direction, a roller attached to each of two end portions in the height direction of the magnetic circuit 25, and a plurality of motors that rotate each of the rollers. Composed.
  • the rail of the magnetic circuit scanning unit 29 has a width substantially equal to the target 23 in the scanning direction.
  • the magnetic circuit scanning unit 29 may be embodied as another configuration as long as the cathode unit 22 can be moved along the scanning direction.
  • the magnetic circuit scanning unit 29 includes a first position P1 where the first end 23e1 of the target 23 and the magnetic circuit 25 overlap, and a second position where the second end 23e2 of the target 23 and the magnetic circuit 25 overlap.
  • the magnetic circuit 25 is scanned between the position P2.
  • the magnetic circuit scanning unit 29 moves the magnetic circuit 25 from the first position P1 toward the second position P2 when the cathode device 18 releases the sputtered particles SP and starts forming the IGZO film.
  • the scanning unit 27 moves the cathode unit 22 from the start position St toward the end position En, for example, the magnetic circuit scanning unit 29 moves the magnetic circuit 25 from the first position P1 toward the second position P2.
  • the magnetic circuit scanning unit 29 moves the magnetic circuit 25 in the direction opposite to the moving direction of the cathode unit 22 along the scanning direction.
  • the scanning unit 27 scans the cathode unit 22 from the start position St toward the end position En and passes the counter region R2 once through the target 23, the magnetic circuit scanning unit 29 moves the magnetic circuit 25 to the first position P1. It is preferable to scan once from the second to the second position P2.
  • the magnetic circuit 25 moves between the first position P1 and the second position P2 a plurality of times, the magnetic circuit 25 with respect to the scanning direction of the target 23 Each time the scanning direction changes, the relative speed of the magnetic circuit 25 with respect to the target 23 changes.
  • the relative speed of the magnetic circuit 25 changes, the state of the plasma formed on the surface of the target 23 also changes, so the number of sputtered particles SP emitted toward the formation region R1 also changes.
  • the thickness of the IGZO film varies in the scanning direction of the target 23.
  • the magnetic circuit scanning unit 29 scans the magnetic circuit 25 once from the first position P1 to the second position P2, thereby scanning direction. In this case, variation in the thickness of the IGZO film can be suppressed.
  • the magnetic circuit scanning unit 29 moves the magnetic circuit 25 along the scanning direction
  • the vertical magnetic field zero region formed by the magnetic circuit 25 also moves along the scanning direction. Therefore, the first erosion region E1 and the second erosion region E2 also move on the surface 23a of the target 23 along the scanning direction.
  • the scanning unit 27 scans the cathode unit 22 in the facing region R2 along the scanning direction
  • the scanning unit 27 also scans the first erosion region E1 and the second erosion region E2 in the facing region R2.
  • the angle formed by the plane along the flight path F of the sputtered particles SP emitted from each erosion region that is the zero vertical magnetic field region and the virtual plane Pid, that is, the surface Sa of the substrate S, is the incident angle ⁇ of the sputtered particles. It is.
  • Each of the shielding plates 28a and 28b has the surface Sa of the substrate S that is the formation region R1 of the plurality of sputtered particles SP emitted from the erosion regions E1 and E2 and the incident angle ⁇ is included in a predetermined range. Do not reach.
  • the first shielding plate 28a and the second shielding plate 28b have the same configuration related to the limitation of the sputtered particles SP that reach the substrate S, although the positions of the first shielding plate 28a and the second shielding plate 28b are different from each other. Therefore, below, the 1st shielding board 28a is demonstrated in detail and description of the 2nd shielding board 28b is abbreviate
  • the distance between the first erosion region E1 and the first shielding plate 28a in the scanning direction is the smallest. Therefore, among the plurality of sputtered particles SP emitted from the first erosion region E1 in the direction toward the cathode unit 22, the range of the incident angle ⁇ 1 of the sputtered particles SP that collide with the first shielding plate 28a is the largest. Of the plurality of sputtered particles SP emitted in the direction from the first erosion region E1 toward the cathode unit 22, the first shielding plate 28a does not allow the sputtered particles SP having an incident angle ⁇ 1 of, for example, 60 ° or less to reach the substrate S. .
  • the distance between the first erosion region E1 and the first shielding plate 28a in the scanning direction is the largest. Therefore, among the plurality of sputtered particles SP emitted from the first erosion region E1 toward the cathode unit 22, the range of the incident angle ⁇ 2 of the sputtered particles SP that collide with the first shielding plate 28a is the smallest.
  • the first shielding plate 28a prevents the sputtered particles SP having an incident angle ⁇ 2 of 30 ° or less from reaching the substrate S among the plurality of sputtered particles SP emitted from the first erosion region E1 toward the cathode unit 22.
  • the first shielding plate 28a has an incident angle ⁇ of 30 ° or less regardless of the position of the magnetic circuit 25 in the scanning direction among the sputtered particles SP emitted in the direction from the first erosion region E1 toward the cathode unit 22.
  • the sputtered particles SP are not allowed to reach the substrate S.
  • a plurality of sputtered particles SP emitted toward the cathode unit 22 are directed to the second erosion region E2 adjacent to the first erosion region E1.
  • the flight path F does not pass through the region of B ⁇ 0 extending along the height direction from the other erosion region toward the space where the sputtered particles fly. Therefore, the probability that the sputtered particles SP react with the active species of oxygen contained in the plasma is reduced, and the IGZO film composed of the sputtered particles SP reduces the unit thickness and the density of oxygen per unit area.
  • the composition of the film varies in the plane of the IGZO film.
  • the smaller the incident angle ⁇ of the sputtered particles SP the longer the flight distance from the point where the sputtered particles SP reach the substrate S after exceeding the B ⁇ 0 region, which is the region where the plasma density is high. Therefore, the number of times that the sputtered particles SP collide with particles other than the active species such as the sputter gas in the space beyond the region of B ⁇ 0, which is a region with high plasma density.
  • the energy of the sputtered particles SP constituting the IGZO film varies, the film density varies in the formed IGZO film.
  • the sputtered particles SP having a smaller incident angle ⁇ are included in the IGZO film, the film characteristics of the compound film vary.
  • the first shielding plate 28a does not allow the sputtered particles SP having an incident angle ⁇ of 30 ° or less to reach the substrate S, it is difficult to form an IGZO film having a small amount of oxygen and a low film density. As a result, variations in composition and film density in the unit thickness and unit area of the IGZO film can be suppressed.
  • the second shielding plate 28b is emitted from the second erosion region E2 in the direction toward the cathode unit 22.
  • sputtered particles SP having an incident angle ⁇ of 30 ° or less are prevented from reaching the substrate S. Therefore, variations in composition and film density in unit thickness and unit area of the IGZO film can be suppressed.
  • the cathode unit 22 is disposed at the start position St, and the magnetic circuit 25 is in the first position. Located at P1. At this time, of the two end portions of the formation region R1 in the scanning direction, the first end portion Re1 where the sputtered particles SP reach first and the two end portions of the target 23 in the scanning direction are close to the formation region R1.
  • the distance D1 between the first end 23e1 is 150 mm or more. Therefore, most of the sputtered particles SP emitted from the target 23 when DC power is supplied to the target 23 hardly reaches the substrate S regardless of the incident angle ⁇ of the sputtered particles SP.
  • the sputtered particles SP released from the target 23 when DC power is supplied are compared to the sputtered particles SP released from the target 23 at a predetermined time when DC power is continuously supplied.
  • the energy of the sputtered particles SP, the active species of oxygen, and the reaction probability are different.
  • an IGZO film having a film quality different from that formed by the sputtered particles SP that have reached the substrate S is formed thereafter.
  • the film composition varies in the molecular layer at the initial stage of formation of the IGZO film.
  • the distance D1 between the first end Re1 of the formation region R1 and the first end 23e1 of the target 23 is 150 mm or more in the scanning direction, the molecular layer in the initial stage of formation of the IGZO film , Variation in the composition of the film can be suppressed.
  • the cathode unit 22 moves along the scanning direction, first, among the sputtered particles SP emitted from the target 23, the sputtered particles SP emitted in the direction from the first erosion region E1 toward the cathode unit 22 are changed to the substrate. S is reached. At this time, the sputtered particles SP reaching the substrate S are limited to sputtered particles SP having an incident angle ⁇ larger than 30 ° by the first shielding plate 28a.
  • the first erosion region E1 has a smaller distance from the formation region R1 than the second erosion region E2, the sputtered particles SP that first reach each part of the substrate S are emitted from the first erosion region E1. It is highly probable that the sputtered particles SP are. Therefore, there is a high probability that the initial layer of the IGZO film is sputtered particles SP that are emitted in the direction from the first erosion region E1 toward the cathode unit 22 and the incident angle ⁇ is larger than 30 °. Therefore, variation in the film composition in the initial layer of the IGZO film can be suppressed.
  • the magnetic circuit scanning unit 29 places the magnetic circuit 25 at the first position P1. Therefore, compared with the case where the magnetic circuit 25 is disposed at another position between the first position P1 and the second position P2, the first erosion region E1 formed by the magnetic circuit 25, the first shielding plate 28a, The distance in the scanning direction between is the smallest. Therefore, the range of the incident angle ⁇ of the sputtered particles SP that collides with the first shielding plate 28a becomes the largest, and the magnetic circuit 25 is disposed at another position in the vicinity of the first end Re1 of the formation region R1. Compared to the case, sputtered particles SP having a larger incident angle ⁇ arrive. As a result, variation in composition in the IGZO film is further suppressed.
  • the sputtered particles SP that are emitted from the first erosion region E1 and reach the substrate S following the sputtered particles SP that first reach the substrate S are also limited to the sputtered particles SP having an incident angle ⁇ larger than 30 °. It is done.
  • the IGZO film is formed only by the sputtered particles SP with the incident angle ⁇ limited, variations in composition in unit thickness and unit area can be suppressed over the entire thickness direction of the IGZO film.
  • the supply of DC power to the target 23 is stopped with the cathode unit 22 placed at the end position En, and the supply of DC power is resumed with the cathode unit 22 placed at the end position.
  • almost no sputtered particles SP reach the substrate S when the DC power is resumed. Therefore, the composition of the IGZO film can be prevented from varying in unit thickness or unit area.
  • the second shielding plate 28b is a substrate for sputtered particles SP having an incident angle of 30 ° or less among the sputtered particles SP emitted in the direction opposite to the direction from the second erosion region E2 toward the cathode unit 22. Do not reach S. Therefore, the sputtered particles SP that are emitted from the first erosion region E1 and reach the substrate S following the sputtered particles SP that first reach the substrate S are also limited to the sputtered particles SP having an incident angle ⁇ larger than 30 °. . As a result, since the IGZO film is formed only by the sputtered particles SP with the incident angle ⁇ limited, variations in composition in unit thickness and unit area can be suppressed over the entire thickness direction of the IGZO film.
  • the magnetic circuit scanning unit 29 places the magnetic circuit 25 in the first position P1. Therefore, compared with the case where the magnetic circuit 25 is disposed at another position between the first position P1 and the second position P2, the first erosion region E1 formed by the magnetic circuit 25, the first shielding plate 28a, The distance in the scanning direction between is the smallest. Therefore, the range of the incident angle ⁇ of the sputtered particles SP that collides with the first shielding plate 28a becomes the largest, and the magnetic circuit 25 is disposed at another position in the vicinity of the first end Re1 of the formation region R1. Compared to the case, sputtered particles SP having a larger incident angle ⁇ arrive. As a result, variation in composition in the IGZO film is further suppressed.
  • FIG. 7 shows a state in which the cathode unit 22 is arranged at the start position St.
  • the cathode unit 22 has a first cathode 22A and a second cathode 22B.
  • Each of the first cathode 22A and the second cathode 22B includes a target 23, a backing plate 24, a magnetic circuit 25, and a magnetic circuit scanning unit 29.
  • the targets 23 of each unit are arranged along the scanning direction, and the surfaces 23a of the two targets 23 are included in the same plane parallel to the virtual plane Pid. It is.
  • the first cathode 22A is closer to the formation region R1 in the scanning direction than the second cathode 22B.
  • each backing plate 24 is connected in parallel to one AC power supply 26A.
  • the cathode unit 22 includes a scanning unit 27 that moves the cathode unit 22 in the scanning direction.
  • the scanning unit 27 moves the cathode unit 22 along the scanning direction in a state where the first cathode 22A and the second cathode 22B are connected.
  • the cathode unit 22 includes a first shielding plate 28a and a second shielding plate 28b.
  • the first shielding plate 28a is in a state where the cathode unit 22 is disposed at the start position St, and the first end Re1 of the formation region R1. And the first end 23e1 of the target 23 of the first cathode 22A.
  • the second shielding plate 28b is farther from the first end Re1 of the formation region R1 than the second end 23e2 of the target 23 of the second cathode 22B in a state where the cathode unit 22 is disposed at the start position St. Placed in a different position.
  • Each shielding plate 28a, 28b is a plurality of sputtered particles SP emitted from the erosion regions E1, E2 of the first cathode 22A and the second cathode 22B, and sputtered particles SP having an incident angle ⁇ within a predetermined range. Do not reach the substrate S.
  • the first shielding plate 28a and the second shielding plate 28b have the same configuration related to the limitation of the sputtered particles SP that reach the substrate S, although the positions of the first shielding plate 28a and the second shielding plate 28b are different from each other. Therefore, below, the 2nd shielding board 28b is demonstrated in detail, and description of the 1st shielding board 28a is abbreviate
  • the distance between the first erosion region E1 of the first cathode 22A and the second shielding plate 28b in the scanning direction is the largest. Therefore, among the plurality of sputtered particles SP emitted in the direction opposite to the direction from the first erosion region E1 of the first cathode 22A toward the cathode unit 22, the incident angle of the sputtered particles SP that collide with the second shielding plate 28b.
  • the range of ⁇ 3 is the smallest.
  • the second shielding plate 28b has an incident angle ⁇ 3 of 9 ° or less among the plurality of sputtered particles SP emitted in the direction opposite to the direction of the cathode unit 22 from the first erosion region E1 of the first cathode 22A.
  • the sputtered particles SP are not allowed to reach the substrate S.
  • the plurality of sputtered particles SP emitted in the direction opposite to the direction toward the cathode unit 22 is the second erosion region E2 of the first cathode 22A.
  • the flight path F of the plurality of sputtered particles SP emitted from the first erosion region E1 passes through a region having a high plasma density before reaching the substrate S.
  • the sputtered particle SP having an incident angle ⁇ 3 of 9 ° or less compared to the sputtered particle SP having a larger incident angle ⁇ , the sputtered particle SP has exceeded the region of B ⁇ 0 extending along the height direction from another erosion region.
  • the flight distance until reaching the substrate S is increased.
  • the number of times the sputtered particles SP collide with particles other than the active species such as the sputter gas in a space beyond the region of B ⁇ 0, which is a high plasma density region increases. Therefore, the energy of the sputtered particles SP is reduced, and the film density is reduced in the IGZO film formed by the sputtered particles SP having a small incident angle ⁇ .
  • the film density of the IGZO film is away from the theoretical density, the film characteristics of the IGZO film are lowered.
  • the second shielding plate 28b has a second erosion region of the second cathode 22B when the magnetic circuit 25 of the second cathode 22B is disposed at the first position P1, as with the second shielding plate 28b in the first embodiment.
  • Some of the plurality of sputtered particles SP emitted from E2 do not reach the substrate S. That is, the second shielding plate 28b has an incident angle ⁇ 2 of 30 ° or less among the sputtered particles SP emitted in the direction opposite to the direction of the cathode unit 22 from the second erosion region E2 of the second cathode 22B.
  • the sputtered particles SP are not allowed to reach the substrate S. Therefore, variation in composition in unit thickness and unit area of the IGZO film can be suppressed.
  • the first shielding plate 28a like the second shielding plate 28b, has an incident angle ⁇ 3 of 9 among the plurality of sputtered particles emitted from the second erosion region E2 of the second cathode 22B toward the cathode unit 22. Do not allow sputtered particles that are less than or equal to ° to reach the substrate S.
  • the first shielding plate 28a has a first erosion region of the first cathode 22A, similar to the first shielding plate 28a in the first embodiment, when the magnetic circuit 25 of the first cathode 22A is disposed at the second position P2. Some of the plurality of sputtered particles SP emitted from E1 do not reach the substrate S. That is, the first shielding plate 28a is a substrate for sputtered particles SP having an incident angle ⁇ 2 of 30 ° or less among the sputtered particles SP emitted from the first erosion region E1 of the first cathode 22A toward the cathode unit 22. Do not reach S.
  • the film density of the IGZO film can be suppressed from being reduced.
  • a third embodiment of the sputtering apparatus will be described with reference to FIGS. Note that the sputtering apparatus of the third embodiment differs from the sputtering apparatus of the first embodiment in the number of cathode units provided in the sputtering chamber 13. Therefore, such differences will be described below.
  • the cathode device 18 includes a first unit 31 and a second unit 32.
  • the first unit 31 and the second unit 32 are arranged in this order from the side close to the first end Re1 of the formation region R1 in the scanning direction in a state of being arranged at the start position St.
  • Each of the first unit 31 and the second unit 32 includes a target 23, a backing plate 24, a magnetic circuit 25, a DC power supply 26D, a first shielding plate 28a, and a second shielding plate 28b.
  • Targets 23 are arranged along the scanning direction.
  • the first unit 31 and the second unit 32 are individually scanned in the facing region R2 along the scanning direction by one scanning unit 27.
  • each of the first unit 31 and the second unit 32 includes a magnetic circuit scanning unit 29 as in the cathode unit 22 of the first embodiment.
  • the main components of the first unit 31 and the second unit 32 are different from each other in the material of the target 23 that each has.
  • the first unit 31 has, for example, the target 23 whose main component is silicon oxide
  • the second unit 32 has, for example, the target 23 whose main component is niobium oxide.
  • 95% by mass of the forming material is silicon oxide or niobium oxide, and preferably 99% by mass or more is silicon oxide or niobium oxide.
  • the distance between the first end Re1 of the formation region R1 and the first end 23e1 of the target 23 included in the first unit 31 is 150 mm or more.
  • the first unit 31 arranged at the start position St starts to release the sputtered particles SP.
  • the distance D1 between the first end Re1 of the formation region R1 and the first end 23e1 of the target 23 in the scanning direction is 150 mm or more. Therefore, when DC power is supplied to the target 23, most of the sputtered particles SP emitted from the target 23 hardly reach the substrate S regardless of the incident angle ⁇ of the sputtered particles SP. Therefore, variation in the composition of the film in the molecular layer at the initial stage of formation of the silicon oxide film can be suppressed.
  • the erosion region of the first unit 31 is scanned along the scanning direction in the facing region R2 facing the formation region R1.
  • the sputtered particles SP reaching the substrate S are limited to sputtered particles SP having an incident angle ⁇ larger than 30 ° by the first shielding plate 28a and the second shielding plate 28b. Therefore, variations in the composition of the film in the initial layer of the silicon oxide film can be suppressed.
  • the second unit 32 arranged at the start position St starts to release the sputtered particles SP.
  • the distance D1 between the second end 23e2 of the target 23 of the first unit 31 and the second end Re2 of the formation region R1 is 150 mm or more. is there.
  • the scanning unit 27 does not scan the second unit 32 while the scanning unit 27 scans the first unit 31 from the start position St toward the end position En.
  • the second unit 32 moves along the scanning direction from the start position St toward the end position En. Thereby, the erosion area
  • the sputtered particles SP reaching the substrate S are limited to the sputtered particles SP having an incident angle ⁇ larger than 30 ° by the first shielding plate 28a and the second shielding plate 28b. Therefore, variations in the composition of the film in the initial layer of the niobium oxide film can be suppressed.
  • the distance D1 between the second end 23e2 of the target 23 included in the second unit 32 and the second end Re2 of the formation region R1 is 150 mm. That's it.
  • the scanning unit 27 does not scan the first unit 31 while the scanning unit 27 scans the second unit 32 from the start position St toward the end position En.
  • the composition of the boundary between the silicon oxide film and the substrate S is suppressed, and the composition of the boundary between the niobium oxide film and the silicon oxide film is reduced. Variations are suppressed.
  • Test examples relating to the characteristics of the thin film transistor will be described with reference to FIGS.
  • the conditions for forming the IGZO film, the thin film transistor having the IGZO film formed by the sputtering apparatus 10 of the example, and the threshold voltage in the thin film transistor will be described in order.
  • the IGZO film formation conditions The IGZO film was formed on the surface Sa of the substrate S using the following conditions by the sputtering apparatus 10 of the first embodiment.
  • the cathode unit 22 is scanned from the start position St toward the end position En along the scanning direction, so that the erosion region of the cathode unit 22 is scanned once in the facing region R2. It was.
  • the magnetic circuit 25 was also scanned once from the first position P1 to the second position P2 along the direction opposite to the direction toward the cathode unit 22.
  • the laminated body in which the silicon oxide film which is a thermal oxide film was formed on the P-type silicon substrate was used as the substrate S.
  • the thin film transistor 40 includes a gate electrode 41, a gate oxide film 42, and a channel layer 43.
  • the gate electrode 41, the gate oxide film 42, and the channel layer 43 are arranged in this order from the lower side. Are stacked.
  • the gate electrode 41 is a substrate made of, for example, P-type silicon
  • the gate oxide film 42 is a silicon oxide film formed by thermal oxidation of the gate electrode 41.
  • the channel layer 43 is an IGZO film formed by using the sputtering apparatus 10 described above, and the thickness of the channel layer 43 is, for example, 50 nm.
  • a source electrode 44 and a drain electrode 45 are formed on the channel layer 43, and the source electrode 44 and the drain electrode 45 are made of, for example, molybdenum.
  • the channel length L, which is the width between the source electrode 44 and the drain electrode 45, is, for example, 0.1 mm
  • the channel width W which is the width of each of the source electrode 44 and the drain electrode 45 in the direction perpendicular to the paper surface, is For example, 1 mm.
  • Test Example 1 will be described with reference to FIG.
  • an IGZO film is formed using the conditions described above in a state where the opposing shielding plate M1 whose one side faces the surface TGs of the target TG is positioned inside the sputtering chamber 13. Formed.
  • a plate member having a width in the transport direction larger than a width in the transport direction of the target TG and a width in the height direction substantially equal to the width in the height direction of the target TG is used as the counter shielding plate M1. Note that each of the target TG, the erosion region E formed on the surface TGs of the target TG, and the opposing shielding plate M1 are arranged in plane symmetry with a virtual plane passing through the center in the transport direction of the target TG as a symmetry plane. .
  • the opposing shielding plate M1 is a sputtered particle that flies toward the opposite side in the transport direction from the B ⁇ 0 region extending from the other erosion region E among the plurality of sputtered particles emitted from the erosion region E, and Only the sputtered particles whose incident angles are included in a predetermined range were allowed to reach the formation region. That is, the opposing shielding plate M1 allowed only the sputtered particles included in the range of 0 ° or more which is the minimum value ⁇ 1m and 30 ° or less which is the maximum value ⁇ 1M to reach the formation region.
  • the opposing shielding plate M1 is a sputtered particle that flies toward the region B ⁇ 0 extending from the other erosion region E among the plurality of sputtered particles emitted from the erosion region E, and has an incident angle of a predetermined value. Only the sputtered particles included in the range were allowed to reach the formation region. That is, the opposing shielding plate M1 allowed only the sputtered particles included in the range of 0 ° or more which is the minimum value ⁇ 2m and 15 ° or less which is the maximum value ⁇ 2M to reach the formation region.
  • Test example 2 will be described with reference to FIG.
  • the IGZO film was formed with the opposing shielding plate M ⁇ b> 1 positioned inside the sputter chamber 13, as in Test Example 1.
  • a plate member having a width in the transport direction smaller than the width in the transport direction of the target TG was used as the opposing shielding plate M1.
  • each of the target TG, the erosion region E formed on the surface TGs of the target TG, and the opposing shielding plate M1 are arranged in plane symmetry with the above-described virtual plane as a plane of symmetry.
  • the opposing shielding plate M1 is a sputtered particle that flies toward the opposite side in the transport direction from the B ⁇ 0 region extending from the other erosion region E among the plurality of sputtered particles emitted from the erosion region E, and Only the sputtered particles whose incident angles are included in a predetermined range were allowed to reach the formation region. That is, the opposing shielding plate M1 allowed only the sputtered particles included in the range of 0 ° or more which is the minimum value ⁇ 1m and 60 ° or less which is the maximum value ⁇ 1M to reach the formation region.
  • the opposing shielding plate M1 is a sputtered particle that flies toward the region B ⁇ 0 extending from the other erosion region E among the plurality of sputtered particles emitted from the erosion region E, and has an incident angle of a predetermined value. Only the sputtered particles included in the range were allowed to reach the formation region. That is, the opposing shielding plate M1 allowed only the sputtered particles included in the range of 0 ° or more which is the minimum value ⁇ 2m and 21 ° or less which is the maximum value ⁇ 2M to reach the formation region.
  • Test Example 3 will be described with reference to FIG.
  • the IGZO film in the state where the opposite shielding plate M1 as in Test Example 2 and the shielding plate M2 extending in the height direction are located at each of two ends in the transport direction of the target TG. Formed. Note that each of the target TG, the erosion region E formed on the surface TGs of the target TG, the opposing shielding plate M1, and the shielding plate M2 is arranged in plane symmetry with the above-described virtual plane as a symmetry plane.
  • each shielding plate M2 flies toward the opposite side of the transport direction from the B ⁇ 0 region extending from the other erosion region E among the plurality of sputter particles emitted from the erosion region E having a short distance in the transport direction. Sputtered particles having an incident angle of 30 ° or less were not allowed to reach the formation region.
  • each shielding plate M2 is a sputtered particle that flies toward the region B ⁇ 0 extending from the other erosion region E among the plurality of sputtered particles emitted from the erosion region having a short distance in the transport direction, and The sputtered particles having an incident angle of 9 ° or less were not allowed to reach the formation region.
  • Test Example 3 out of the sputtered particles emitted from the erosion region E, the incident angle among the sputtered particles flying toward the opposite side of the transport direction from the B ⁇ 0 region extending from the other erosion region E The sputtered particles having the following range reached the formation region.
  • Test Example 4 will be described with reference to FIG.
  • the IGZO film was formed in a state where the two shielding plates M ⁇ b> 2 were positioned as in Test Example 3.
  • a plate member having a width in the width direction larger than the shield plate M2 of Test Example 3 was used as the shield plate M2. Note that each of the target TG, the erosion region E formed on the surface TGs of the target TG, and the shielding plate M2 is arranged in plane symmetry with the above-described virtual plane as a symmetry plane.
  • each shielding plate M2 flies toward the opposite side of the transport direction from the B ⁇ 0 region extending from the other erosion region E among the plurality of sputter particles emitted from the erosion region E having a short distance in the transport direction. Sputtered particles having an incident angle of 60 ° or less were not allowed to reach the formation region.
  • each shielding plate M2 is a sputtered particle that flies toward the region B ⁇ 0 extending from the other erosion region E among the plurality of sputtered particles emitted from the erosion region having a short distance in the transport direction, and The sputtered particles having an incident angle of 21 ° or less were not allowed to reach the formation region.
  • the thin-film transistor described with reference to FIG. 11 was formed.
  • a bias stress test was performed for 60 minutes under the condition that the gate-source voltage was 20 V and the drain-source voltage was 20 V, for example.
  • the threshold voltage V 0 after the bias stress test was measured, and the average value of the amount of change ( ⁇ V 0 ) in the threshold voltage V 0 was calculated.
  • the threshold voltage V 0 is a gate-source voltage when the drain current reaches 1E ⁇ 9 A.
  • the change amount of the threshold voltage V 0 is 5.5 in the thin film transistor of Test Example 1, and the change amount of the threshold voltage V 0 is 5.1 in the thin film transistor of Test Example 2.
  • the maximum values ⁇ 1M and ⁇ 2M of the incident angles of the sputtered particles that reach the formation region are large, and thus the threshold voltage V 0 changes. A small amount was observed.
  • the change amount of the threshold voltage V 0 is 2.1, and it is recognized that the change amount of the threshold voltage V 0 is significantly smaller than that of the thin film transistor of Test Example 2. It was.
  • the maximum values of incident angles ⁇ 1M and ⁇ 2M when the IGZO film is formed are the same, while the minimum values of incident angles ⁇ 1m and ⁇ 2m are mutually different. Different.
  • the minimum incident angles ⁇ 1m and ⁇ 2m are larger than in Test Example 2. Therefore, when the IGZO film is formed, by a small sputtered particles incident angle does not reach the formation region at the thin film transistor having a IGZO film as the channel layer, it can be said that the variation in the threshold voltage V 0 becomes smaller. More specifically, among the plurality of sputtered particles, by not reach satisfying sputtered particles forming region below, it can be said that the variation in the threshold voltage V 0 becomes smaller.
  • the change amount of the threshold voltage V 0 is 1.9, and the change amount of the threshold voltage V 0 is smaller than that of the thin film transistor of Test Example 3.
  • the difference between the change amount of the threshold voltage V 0 which a thin film transistor of the variation in Test Example 4 of the threshold voltage V 0 which a thin film transistor of Experimental Example 3, the amount of change in V 0 which a thin film transistor of Experimental Example 2 Test It was confirmed that the difference was smaller than the change amount of the threshold voltage V 0 in the thin film transistor of Example 3.
  • the minimum value ⁇ 1m incident angle theta be larger than the test example 3 Shita2m, variation in the threshold voltage V 0 which a thin film transistor was observed to not be significantly small.
  • the IGZO film when the IGZO film is formed, the sputtered particles reaching the formation area, the conditions of the above (A), and, that satisfies the condition of (B), the threshold voltage V 0 which a thin film transistor It can be said that it is important in reducing the amount of change. That is, since the IGZO film is formed by the sputtered particles that satisfy the conditions (A) and (B), variation in the composition of the IGZO film can be suppressed in the plane of the IGZO film that forms the interface with the gate oxide film. Further, variation in semiconductor characteristics of the IGZO film can be suppressed. Thereby, the insulating property of the gate oxide film 42 is easily maintained, and it can be said that the change amount of the threshold voltage in the thin film transistor is suppressed.
  • the sputtered particles that satisfy the condition (A) do not fly toward the B ⁇ 0 region extending from the other erosion region E, and are therefore included in the plasma.
  • the probability of reacting with active species is reduced.
  • the sputtered particles that satisfy the condition (A) do not reach the formation region, thereby suppressing variations in the composition and film density of the IGZO film.
  • FIG. 17 shows the result of measuring the film density of the IGZO film using the X-ray reflectivity method, and the ratio of the number of atoms of indium, gallium, and zinc in the IGZO film is 1: 1: 1.
  • the theoretical density at a certain time (g / cm 3 ) is shown.
  • the film density of Test Example 2 was 5.22 g / cm 3 and the film density of Test Example 3 was 6.23 g / cm 3 . Then, it was confirmed that the film density of Test Example 3 was close to the theoretical density of 6.38 g / cm 3 compared to the film density of Test Example 2.
  • the sputtered particles SP satisfying the conditions (A) and (B) rather than the IGZO film formed by the plurality of sputtered particles SP including the sputtered particles SP satisfying the conditions (A) and (B) described above.
  • the IGZO film formed by a plurality of sputtered particles SP not containing the film it was recognized that the film density is increased and the film density is closer to the theoretical density.
  • the IGZO film formed by the sputtered particles SP other than the sputtered particles SP satisfying the above conditions (A) and (B) in addition to the characteristics of the IGZO film at the interface with other members, the IGZO film The film density which is a characteristic of the IGZO film over the entire thickness direction is also increased.
  • the main components in the formation material of the target 23 are oxide semiconductors other than IGZO, for example, zinc oxide, nickel oxide, tin oxide, titanium oxide, vanadium oxide, indium oxide, and Or strontium titanate.
  • the main components in the formation material of the target 23 may be other than IGZO, and oxide semiconductors other than IGZO containing indium, for example, indium zinc tin oxide (IZTO), Indium zinc antimony oxide (IZAO), indium tin zinc oxide (ITZO), indium zinc oxide (IZO), indium antimony oxide (IAO), or the like may be used.
  • oxide semiconductors other than IGZO containing indium, for example, indium zinc tin oxide (IZTO), Indium zinc antimony oxide (IZAO), indium tin zinc oxide (ITZO), indium zinc oxide (IZO), indium antimony oxide (IAO), or the like may be used.
  • IZTO indium zinc tin oxide
  • IZAO Indium zinc antimony oxide
  • ITZO indium tin zinc oxide
  • IAO indium antimony oxide
  • the main component in the material for forming the target 23 is not limited to IGZO, and may be, for example, indium tin oxide (ITO) and inorganic oxides such as aluminum oxide.
  • ITO indium tin oxide
  • aluminum oxide aluminum oxide
  • the main component in the material for forming the target 23 may be a metal, a metal compound, a semiconductor, or the like.
  • a single metal or semiconductor is used as the main component of the material for forming the target 23
  • an oxide film or a nitride is produced by a reaction between the sputtered particles SP emitted from the target 23 and plasma generated from the reaction gas.
  • a compound film such as a film can be formed.
  • both the first unit 31 and the second unit 32 are arranged at the start position St. It does not have to be a configuration.
  • the first unit 31 may be arranged at the start position St and the second unit 32 may be arranged at the end position En.
  • D1 is 150 mm or more.
  • the distance D1 in the scanning direction between the second end 23e2 of the target 23 of the second unit 32 and the second end Re2 of the formation region R1 is 150 mm or more is preferable.
  • the scanning unit 27 moves the first unit 31 from the start position St toward the end position En along the scanning direction. Thereby, for example, a silicon oxide film is formed in the formation region R1. Then, the scanning unit 27 moves the first unit 31 along the scanning direction from the end position En toward the start position St. At this time, the first unit 31 may or may not emit the sputtered particles SP to the formation region R1. Next, the scanning unit 27 moves the second unit 32 along the scanning direction from the end position En toward the start position St. Thereby, for example, a niobium oxide film is formed in the formation region R1. Then, the scanning unit 27 moves the second unit 32 along the scanning direction from the start position St toward the end position En. At this time, the second unit 32 may or may not emit the sputtered particles SP to the formation region R1.
  • the number of times each of the first unit 31 and the second unit 32 moves between the start position St and the end position En along the scanning direction while releasing the sputtered particles SP is the compound film formed by each unit. It can be changed according to the thickness.
  • the sputtering apparatus 10 may be configured to include two sputtering chambers 13 having one cathode unit 22.
  • the cathode unit 22 of each sputter chamber 13 includes the targets 23 whose main components are different from each other, so that a laminate composed of two compound films is formed on the surface Sa of the substrate S.
  • the sputtering apparatus 10 may include three or more sputtering chambers 13 each having one cathode unit 22, and the main components in the material for forming the target 23 included in each cathode unit 22 may be different from each other. According to such a configuration, a laminate composed of three or more compound films is formed on the surface Sa of the substrate S.
  • the first unit 31 of the third embodiment may include a target 23 whose main component of the forming material is other than silicon oxide, and the second unit 32 is a target whose main component of the forming material is other than niobium oxide. 23 may be provided.
  • the main component of the forming material may be any of a metal, a metal compound, a semiconductor, and the like.
  • the sputter chamber 13 of the third embodiment may be configured to include three or more cathode units 22, and the main components in the target 23 forming material included in each cathode unit 22 may be different from each other or the same. There may be.
  • the cathode unit 22 of the second embodiment includes a third shielding plate disposed between the target 23 of the first cathode 22A and the target 23 of the second cathode 22B in the scanning direction. 28c may be provided.
  • the protruding width in the width direction of the third shielding plate 28c may be different from the first shielding plate 28a and the second shielding plate 28b, or may be the same.
  • the 3rd shielding board 28c is an example of a 3rd shielding part.
  • the distance between the first erosion region E1 of the first cathode 22A and the third shielding plate 28c in the scanning direction is the largest. growing.
  • the distance between the first erosion region E1 and the third shielding plate 28c in the scanning direction is smaller than the distance between the first erosion region E1 and the second shielding plate 28b. Therefore, among the plurality of sputtered particles SP emitted in the direction opposite to the direction from the first erosion region E1 of the first cathode 22A toward the cathode unit 22, the incident angle of the sputtered particles SP that collide with the third shielding plate 28c.
  • the range of ⁇ 4 is larger than 9 °.
  • the maximum value of the flight path F is reduced at the plurality of sputtered particles SP reaching the formation region R1, and the maximum value of the number of collisions between the sputtered particles SP and other particles in the plasma is also reduced.
  • the minimum value of the energy possessed by the sputtered particles SP increases, and the film density of the IGZO film can be suppressed from decreasing.
  • the distance between the second erosion region E2 of the second cathode 22B and the third shielding plate 28c in the scanning direction is the largest.
  • the distance is smaller than the distance between the second erosion region E2 and the first shielding plate 28a in the scanning direction. Therefore, among the plurality of sputtered particles SP emitted in the direction from the second erosion region E2 of the second cathode 22B toward the cathode unit 22, the range of the incident angle ⁇ of the sputtered particles SP that collide with the third shielding plate 28c is It becomes larger than 9 °. Therefore, the third shielding plate 28c acts on the sputtered particles SP emitted from the second cathode 22B in the same manner as the sputtered particles SP emitted from the first cathode 22A.
  • the magnetic circuit scanning unit 29 moves the magnetic circuit 25 from the first position P1 to the second position P2 along the scanning direction.
  • the magnetic circuit scanning unit 29 may move the magnetic circuit 25 from the second position P2 toward the first position P1 along the scanning direction.
  • the scanning unit 27 causes the target 23 to scan the counter region R2 once
  • the magnetic circuit scanning unit 29 scans the magnetic circuit 25 from the second position P2 to the first position P1 once. It is possible to obtain the effect according to (5).
  • the magnetic circuit scanning unit 29 may be configured to cause the magnetic circuit 25 to scan a part between the first end 23e1 and the second end 23e2 of the target 23 along the scanning direction.
  • the shielding plate having a smaller protrusion width is used as the sputtered particle SP having the same incident angle ⁇ as that of each of the above-described embodiments. Is not allowed to reach the formation region R1.
  • the cathode unit 22 includes the magnetic circuit scanning unit 29.
  • the cathode unit 22 may not include the magnetic circuit scanning unit 29. That is, the cathode unit 22 may have a configuration in which the position of each erosion region with respect to the target 23 is fixed. Even with such a configuration, the effects according to the above (2) and (3) can be obtained as long as each shielding plate 28a does not allow the sputtered particles SP having an incident angle ⁇ of 30 ° or less to reach the formation region R1. I can.
  • the second shielding plate 28b has the incident angle ⁇ of 9 ° or less among the sputtered particles SP emitted from the first erosion region E1 of the first cathode 22A. May reach the formation region R1. Further, even if the first shielding plate 28a causes the sputtered particles SP emitted from the second erosion region E2 of the second cathode 22B to have the incident angle ⁇ of 9 ° or less reach the formation region R1. Good.
  • the first shielding plate 28a generates sputtered particles SP having an incident angle ⁇ of 30 ° or less among the sputtered particles SP emitted from the first erosion region E1 of the first cathode 22A in the formation region R1.
  • the second shielding plate 28b does not allow the sputtered particles SP having an incident angle ⁇ of 30 ° or less among the sputtered particles SP emitted from the second erosion region E2 of the second cathode 22B to reach the formation region R1.
  • the effect according to (3) described above can be obtained.
  • the incident angle of the second shielding plate 28b is smaller than 30 ° among the sputtered particles SP emitted from the erosion region closest to the second shielding plate 28b in the scanning direction.
  • the configuration may be such that only the sputtered particles SP having ⁇ do not reach the formation region R1. Even in such a configuration, as long as the cathode unit 22 includes the second shielding plate 28b, it is possible to suppress variation in the composition of the compound film as compared with a configuration in which the second shielding plate 28b is not included.
  • the protruding width of the first shielding plate 28a and the protruding width of the second shielding plate 28b may not be equal to each other, and the protruding width of the first shielding plate 28a may be smaller than the protruding width of the second shielding plate 28b. .
  • the cathode unit 22 of the first to third embodiments may not include the second shielding plate 28b. Even in such a configuration, if the first shielding plate 28a is provided, the incident angle ⁇ at least at the sputtered particles SP that first reaches the formation region R1 is limited. Therefore, the effect according to the above (2) can be obtained.
  • the first shielding plate 28a may be configured such that only the sputtered particles SP having the incident angle ⁇ smaller than 30 ° do not reach the formation region R1. Even with such a configuration, as long as the cathode unit 22 includes the first shielding plate 28a, it is possible to obtain an effect equivalent to the above (2).
  • the cathode unit 22 when the cathode unit 22 is disposed at the end position En, the second end Re2 of the formation region R1 and the second end Re2 of the formation region R1 in the scanning direction
  • the distance from the second end 23e2 of the target 23 with the shortest distance may not be 150 mm.
  • the distance between the first end Re1 of the formation region R1 and the first end Re1 of the formation region R1 in the scanning direction is the shortest. If the distance from the second end 23e2 of the target 23 is 150 mm, the effect according to the above (1) can be obtained.
  • the sputter apparatus 10 does not have to include the carry-in / out chamber 11 and the pretreatment chamber 12, and if the sputter chamber 13 is provided, the effects listed above can be obtained.
  • the sputtering apparatus 10 may include a plurality of pretreatment chambers 12.
  • the width along the transport direction in the substrate S and the width toward the front of the page are not limited to the above-described sizes, and can be changed as appropriate.
  • the sputtering gas may be a rare gas other than argon gas, for example, helium gas, neon gas, krypton gas, and xenon gas.
  • the reactive gas may be a gas containing oxygen other than the oxygen gas, a gas containing nitrogen, or the like, and can be changed according to the compound film formed in the sputtering chamber 13.
  • the cathode unit 22 according to the second embodiment may be configured to include three or more cathodes including the target 23, the backing plate 24, the magnetic circuit 25, the AC power supply 26A, and the magnetic circuit scanning unit 29.
  • the sputter chamber 13 of the third embodiment may be configured to include two cathode units 22 including the cathode unit 22 of the second embodiment, that is, the first cathode 22A and the second cathode 22B.
  • the conditions for forming the IGZO film are not limited to the conditions described in the above embodiment, but may be other conditions. In short, it is only necessary that the IGZO film can be formed on the surface Sa of the substrate S.
  • the sputtering apparatus may be embodied as a cluster type sputtering apparatus 50.
  • the sputtering apparatus 50 includes a transfer chamber 51 on which the transfer robot 51R is mounted, and the following chambers connected to the transfer chamber 51. That is, the transfer chamber 51 is required for film formation, and a carry-in / out chamber 52 for carrying the substrate before film formation from the outside of the sputtering apparatus 50 and carrying the substrate after film formation to the outside of the sputtering apparatus 50.
  • a pretreatment chamber 53 for performing pretreatment on a substrate and a sputtering chamber 54 for forming a compound film on the substrate are provided.
  • DC power supply 27 ... scanning section, 28a ... first shielding plate, 28b ... second shielding plate, 28c ... 3rd shielding board, 29 ... Magnetic circuit scanning part, 31 ... 1st unit, 32 ... 2nd unit, 40 ... Thin-film transistor, 41 ... Gate electrode, 42 ... Gate acid Membrane, 43 ... channel layer, 44 ... source electrode, 45 ... drain electrode, 51 ... transfer chamber, 51R ... transfer robot, B ... magnetron magnetic field, D1 ... distance, E ... erosion region, E1 ... first erosion region, E2 ... 2nd erosion region, En ... end position, F ... flight path, Lv ... normal, M1 ... opposing shielding plate, M2, M3 ...
  • shielding plate P1 ... first position, P2 ... second position, Pid ... virtual plane, R1 ... formation region, R2 ... opposing region, Re1 ... first end, Re2 ... second end, S ... substrate, Sa ... surface, SP ... sputtered particles, St ... start position, T ... tray, ⁇ , ⁇ 1, ⁇ 2, ⁇ 3, ⁇ 4, incident angles.

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019026394A1 (ja) * 2017-08-01 2019-02-07 株式会社ニコン トランジスタの製造方法、及びトランジスタ
WO2019216003A1 (ja) * 2018-05-11 2019-11-14 株式会社アルバック スパッタリング方法
CN110965031A (zh) * 2018-09-28 2020-04-07 佳能特机株式会社 成膜装置、成膜方法以及电子器件的制造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102359244B1 (ko) 2016-11-21 2022-02-08 한국알박(주) 막 증착 방법
TWI686493B (zh) 2017-06-28 2020-03-01 日商愛發科股份有限公司 濺鍍裝置
JP6970624B2 (ja) * 2018-02-13 2021-11-24 東京エレクトロン株式会社 成膜システム及び基板上に膜を形成する方法
KR102194949B1 (ko) 2018-04-20 2020-12-24 신크론 컴퍼니 리미티드 반응성 스패터 장치 및 이를 이용한 복합 금속 화합물 또는 혼합막의 성막 방법
JP7066841B2 (ja) * 2018-06-19 2022-05-13 株式会社アルバック スパッタリング方法、スパッタリング装置
JP7193291B2 (ja) 2018-09-28 2022-12-20 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004156122A (ja) * 2002-11-08 2004-06-03 Nobuyuki Takahashi 成膜方法及びスパッタ装置
JP2011111679A (ja) * 2009-11-24 2011-06-09 Samsung Mobile Display Co Ltd スパッタリング装置
JP2013064171A (ja) * 2011-09-15 2013-04-11 Ulvac Japan Ltd スパッタリング装置、成膜方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06322534A (ja) * 1993-05-07 1994-11-22 Sharp Corp 薄膜形成方法及び薄膜形成装置
JP5309150B2 (ja) * 2008-10-16 2013-10-09 株式会社アルバック スパッタリング装置及び電界効果型トランジスタの製造方法
US20110201150A1 (en) * 2008-10-16 2011-08-18 Ulvac, Inc. Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor
JP5004931B2 (ja) 2008-11-25 2012-08-22 株式会社アルバック スパッタ源、スパッタリング装置、及びスパッタリング方法
KR101406341B1 (ko) * 2009-07-17 2014-06-27 가부시키가이샤 아루박 성막 장치
KR20120102105A (ko) * 2010-01-26 2012-09-17 캐논 아네르바 가부시키가이샤 필름 형성 방법, 필름 형성 장치 및 필름 형성 장치를 위한 제어 유닛

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004156122A (ja) * 2002-11-08 2004-06-03 Nobuyuki Takahashi 成膜方法及びスパッタ装置
JP2011111679A (ja) * 2009-11-24 2011-06-09 Samsung Mobile Display Co Ltd スパッタリング装置
JP2013064171A (ja) * 2011-09-15 2013-04-11 Ulvac Japan Ltd スパッタリング装置、成膜方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019026394A1 (ja) * 2017-08-01 2019-02-07 株式会社ニコン トランジスタの製造方法、及びトランジスタ
WO2019216003A1 (ja) * 2018-05-11 2019-11-14 株式会社アルバック スパッタリング方法
KR20190129823A (ko) * 2018-05-11 2019-11-20 가부시키가이샤 아루박 스퍼터링 방법
JP6666524B1 (ja) * 2018-05-11 2020-03-13 株式会社アルバック スパッタリング方法
KR102202226B1 (ko) 2018-05-11 2021-01-13 가부시키가이샤 아루박 스퍼터링 방법
CN110965031A (zh) * 2018-09-28 2020-04-07 佳能特机株式会社 成膜装置、成膜方法以及电子器件的制造方法
JP2020056051A (ja) * 2018-09-28 2020-04-09 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7136648B2 (ja) 2018-09-28 2022-09-13 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
CN110965031B (zh) * 2018-09-28 2023-09-22 佳能特机株式会社 成膜装置、成膜方法以及电子器件的制造方法

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