WO2015026087A1

WO2015026087A1 - Plasma chemical vapour deposition device

Info

Publication number: WO2015026087A1
Application number: PCT/KR2014/007379
Authority: WO
Inventors: 안경준; 권오대
Original assignee: (주) 에스엔텍
Priority date: 2013-08-20
Filing date: 2014-08-08
Publication date: 2015-02-26
Also published as: KR20150021251A

Abstract

The present invention relates to a plasma chemical vapour deposition device adapted to use a hard substrate as the object to be processed, the device comprising: a vacuum chamber for forming a vacuum space; a carrying and transporting unit which is provided in the vacuum space and carries and transports the substrate from a supply side to a discharge side during the procedure in which the processing is carried out; an electrode which is disposed adjacent to the surface opposite to the surface to be processed of the substrate; a power source supply unit for supplying power to the electrode; a vacuum adjusting unit for adjusting the degree of vacuum inside the vacuum chamber; and a gas supply unit for supplying a processing gas towards the surface to be processed of the substrate. In this way, a plasma chemical vapour deposition device is provided which allows the hard substrate to be transported while at the same time subjecting the surface of same to high speed processing involving any one of high-quality film formation or etching or else surface processing.

Description

Plasma chemical vapor apparatus

The present invention relates to a plasma chemical vapor apparatus, and more particularly, to a plasma chemical vapor apparatus capable of performing a high quality film formation, etching or surface treatment process on a surface thereof while transferring a hard substrate.

It is a technology applied to a process of forming a thin film or etching a thin film on a substrate in the semiconductor, display, solar cell, or packaging paper manufacturing field, or a surface treatment for changing the surface characteristics of the substrate. PVD method), chemical vapor deposition (CVD), and the like.

Among them, the plasma chemical vapor apparatus based on chemical vapor deposition (CVD) may be applied to a method of performing a series of processes as described above on the surface of a substrate by decomposing the process gas by plasma, and the process speed and The process quality is superior to devices using the PVD method and is widely used in recent years.

In general, a conventional plasma chemical vapor apparatus is provided with a mounting portion in which a substrate is fixedly mounted in a vacuum chamber, and a plasma source is disposed in an upper region spaced from the loading portion. The film forming gas is supplied as a process gas inside the vacuum chamber, and a high frequency AC power is supplied to the plasma source.

In the conventional film formation process performed by the plasma chemical vapor apparatus, when the plasma is formed in the vacuum chamber from the plasma source by the power supply, the film forming process is decomposed and deposited on the surface of the substrate. Is performed.

On the other hand, in the case of the etching apparatus as another example of such a conventional plasma chemical vapor apparatus, the cathode (-) of the high frequency AC power supply having the same configuration as the film forming apparatus described above may be provided in a form in which the substrate is loaded. have.

In the etching process performed by the conventional plasma chemical vapor apparatus, when plasma is formed inside the vacuum chamber from the plasma source by power supply, the etching gas supplied into the vacuum chamber is decomposed and guided to the substrate side to form a film on the surface or the substrate. The etching process is performed in such a manner that the film forming layer is etched in a series of patterns.

In the case of the above-described plasma chemical vapor apparatus, the substrate to be processed is suitable for a hard substrate, and the substrate may be a hard substrate such as a glass substrate, a ceramic substrate, a semiconductor substrate, a metal substrate, a plastic substrate, or the like.

However, in the conventional plasma chemical vapor apparatus, the plasma generated from the plasma source is formed between the plasma source and the substrate in a vacuum space so that the plasma is not concentrated on the surface of the substrate.

Therefore, in order to perform uniform film formation, etching, or surface treatment on the entire surface of the substrate, the substrate must be discharged after performing the process for a suitable time until the desired process quality is reached while the substrate is stopped. Accordingly, there is a disadvantage that the process cannot be made at high speed.

Meanwhile, an example of another plasma chemical vapor apparatus has been disclosed in Japanese Patent Laid-Open No. 2011-80104 (hereinafter referred to as "prior patent").

The prior patent discloses an example of a film forming apparatus in which a process gas decomposed in a process of passing a film forming region of a vacuum chamber while a substrate is wound around a pair of circular electrode surfaces as a substrate is transferred in a roll-to-roll manner is formed on the substrate.

A magnetic field generating member is provided inside both circular electrodes, and the magnetic field formed by these magnetic field generating members densifies the plasma on the substrate and the process target surface.

In the case of this prior patent, a soft substrate is a process target, and the substrate may be formed of a film, paper, nonwoven fabric, fiber, or the like, and the electrode and the magnetic field generating member are disposed on the opposite side of the process target surface of the substrate to generate plasma. It can concentrate on the process target surface of a base material. Thereby, the process of film formation etc. can be performed with respect to a soft base material at high speed.

However, this prior patent has a problem that the process target is limited to the soft description. As a result, it is impossible to perform a continuous high speed film forming process or an etching process or a surface treatment process on the hard substrate.

Accordingly, an object of the present invention is to provide a plasma chemical vapor apparatus capable of carrying out any of high quality film formation, etching or surface treatment at a high speed on a surface thereof while transferring a hard substrate.

According to the present invention, the object of the present invention is to provide a plasma chemical vapor apparatus for processing a hard substrate, comprising: a vacuum chamber for forming a vacuum space; A load transfer part provided in the vacuum space to load-transfer the substrate from a supply side to a discharge side during the process; At least one electrode disposed adjacent to a surface opposite to a process target surface of the substrate; A power supply unit supplying power to the electrode; A vacuum control unit for adjusting the degree of vacuum in the vacuum chamber; It is achieved by a plasma chemical vapor apparatus comprising a; gas supply unit for supplying a process gas to the process target surface side of the substrate.

The electrode preferably has a hollow body and a magnetic field generating member provided inside the electrode body to form a magnetic field toward the process target surface.

At this time, the electrode body is provided as a hollow tubular body having a circular cross section when viewed in the lateral direction of the axial direction, it may be installed rotatably.

Alternatively, the electrode body may be provided to have an opposing surface that faces in parallel to the opposite surface of the process target surface of the substrate. In this case, the electrode body may be provided as a hollow body having a polygonal cross section.

On the other hand, the electrode is provided in plurality in intervals along the transport direction of the substrate, the electrode body of the electrodes are provided with a hollow tubular body having a circular cross section or a hollow body having a polygonal cross section when viewed in the horizontal direction in the axial direction or A hollow tubular body having a circular cross section and a hollow body having a polygonal cross section may be provided.

The process may be performed in a state in which the substrate supplied from the supply side is stopped in the vacuum chamber by the loading transfer part, or the substrate is continuously moved from the supply side to the discharge side by the loading transfer part. Alternatively, the substrate may be performed in a form in which the substrate is reciprocated in a direction opposite to a conveying direction in the vacuum chamber in a state in which the substrate is loaded in the load conveying unit.

And it is preferred that a gap of 0.1mm to 5mm is formed between the electrode body and the substrate.

In addition, it is effective to further include a heating means provided on the process target surface side of the substrate.

In addition, the electrode may be installed to reciprocate to a region spaced apart from the region adjacent to the substrate.

The load transfer part may transfer the substrate so that the substrate can be reciprocated to a region spaced apart from an area adjacent to the electrode.

In addition, the magnetic field generating member may be provided to be movable to a position spaced apart from a position adjacent to the substrate in the electrode.

In addition, the magnetic field generating member may be installed to adjust the direction of the magnetic field in the range toward the process target surface side of the substrate inside the electrode.

On the other hand, the process gas is preferably a film forming gas or etching gas or surface treatment gas.

According to the present invention, there is provided a plasma chemical vapor apparatus capable of carrying out any of high quality film formation, etching or surface treatment at a high speed on a surface thereof while transferring a hard substrate.

1 is a schematic diagram of a plasma chemical vapor apparatus according to an embodiment of the present invention,

2 is a side view of the electrode region taken along the line II-II of FIG. 1;

3 and 4 is a schematic diagram of a plasma chemical vapor apparatus according to another embodiment of the present invention,

5 to 7 are enlarged views of electrode regions according to the present invention.

8 is a schematic view of a plasma chemical vapor apparatus according to another embodiment of the present invention.

1 and 2, the plasma chemical vapor apparatus 1 according to the present invention includes a vacuum chamber 10 forming a vacuum space and a substrate introduced into the vacuum chamber 10. Loading transfer unit 20 for loading and transporting S) in the discharge direction, the vacuum control unit 30 for adjusting the degree of vacuum in the vacuum chamber 10, and the gas supply unit for supplying the film forming raw material gas into the vacuum chamber 10 40, an electrode 60 for concentrating the plasma P to the process target surface side of the substrate S loaded in the load transfer unit 20, and a power supply unit 50 for applying power to the electrode 60 or the like. It includes.

The vacuum chamber 10 may be manufactured to have a vacuum space of an appropriate shape using a plate-like member and a frame such as a metal or an alloy having excellent pressure resistance and heat resistance. A shield cover 10a may be provided in one inner region of the vacuum chamber 10 to partition a region different from the deposition region. Here, the film forming area is an area between at least one surface of the electrode 60 and the surface of the base material S. The shield cover 10a may partition the film forming area and other areas in various forms. The configuration of the cover 10a may be omitted. The vacuum chamber 10 is provided with a supply part (not shown) into which the base material S is introduced and a discharge part (not shown) for discharging the base material S. The supply part (not shown) and the discharge part (not shown) may each be in the form of an entrance opening facing outward, or may be in the form of a connection opening connected to another process.

The loading transfer part 20 is provided in the vacuum chamber 10 to transfer the hard substrate from the supply part (not shown) of the vacuum chamber 10 toward the discharge part (not shown) during the process. It includes a transfer loading stand 21, the transfer driving unit (not shown) for driving the transfer loading stand 21 is transferred in the state loaded.

* The transfer stack 21 is provided in pairs at intervals from the supply part (not shown) to the discharge part (not shown) inside the vacuum chamber 10 so as to correspond to both end portions of the hard substrate S in the width direction. A plurality of feed rollers 23 rotatably supported by the roller support part 22 and both roller support parts 22 and rotated by a feed driving part (not shown) while rollingly contacting both end regions in the width direction of the hard substrate S; It may be provided in the form having a).

Rotation of the conveying rollers 23 may be provided in a form in which each of the conveying rollers 23 is independently rotated by each of the conveying driving units (not shown). It is preferable that the driving unit (not shown) is provided in a form that is rotated by a transfer drive unit (not shown) provided in pairs on both sides in the width direction of the transfer table 21. Here, the transfer driving unit (not shown) may include an interlocking member such as a motor and a belt pulley or a chain.

On the other hand, the transport loading table 21 may include a loading table reciprocating means (not shown) so that the substrate to be transported and transported can be reciprocated to a region spaced apart from an area adjacent to the electrode 60 to be described later. The loading table reciprocating means (not shown) may be implemented in the form of reciprocating movement of the transfer stack 21 using a lifting cylinder, or in various forms such as a reciprocating form using a drive motor for rotating the rack, pinion and pinion. Can be.

By the mutual access and separation of the substrate and the electrode 60 by the reciprocating movement of the load transfer unit 20 can be adjusted the shape of the plasma (P) such as the intensity and size of the plasma (P) dense to the process target surface of the substrate have. Thereby, an optimal process can be performed according to a process form, process conditions, etc.

The substrate S loaded and transported in the load transfer part 20 may be various materials such as a glass substrate, a ceramic substrate, a semiconductor substrate, a metal substrate, a plastic substrate, and the like in the range of hard materials.

Subsequently, the substrate S loaded and transported in the load transporting unit 20 may be supplied by a separate substrate supply means (not shown) and a substrate discharge means (not shown), which are supplied outside the vacuum chamber 10 or in the entire process. Not shown) may be discharged to the outside or the next process after performing the process while being transferred toward the discharge unit (not shown) in the state loaded on the transfer loading table 21.

Alternatively, the stack transfer unit 20 is transported when the substrate S is loaded on the transport stacking base 21 through a supply unit (not shown) in an external or previous process by a separate substrate supply means (not shown) (not shown). The mounting table 21 may be configured to perform the process while reciprocating the substrate S in the transfer direction and the opposite direction for a predetermined process time in the vacuum chamber 10. Substrate S is completed, the process is transferred toward the discharge unit (not shown) may be discharged to the outside or the next process. This makes it possible to perform a process of uniform quality over the entire area of the substrate (S).

Of course, the load transfer part 20 performs the process in a state in which the supplied substrate S is stopped inside the vacuum chamber 10, and then transfers the substrate on which the process is completed toward the discharge part (not shown). Or it can be discharged to the next process.

The vacuum control unit 30 may include a configuration in which a configuration such as a vacuum pump and a valve is connected in various forms. Preferably, the low vacuum pump 33 and the high vacuum pump 31, the plurality of valves 35, and the pressure control may be performed such that the vacuum exhaust may be performed in the order of low vacuum to high vacuum in the process of adjusting the degree of vacuum in the vacuum chamber 10. The valve 37 and the high vacuum valve 39 may be included as appropriate. The degree of vacuum inside the vacuum chamber 10 by the vacuum control unit 30 may be variously adjusted according to the film forming process conditions.

The gas supply unit 40 includes a gas supply source 41 for supplying process gas into the vacuum chamber 10, a gas supply flow path (not shown) extending from the gas supply source 41 into the vacuum chamber 10, and As a gas supply controller for opening and closing a gas supply passage (not shown), a gas flow controller 45, a vacuum gauge 47, a valve 48, and the like may be provided.

Here, the gas supply passage (not shown) may extend from the gas supply source 41 into the vacuum chamber 10. For example, the gas supply passage may be adjacent to the process target surface of the substrate S in which the plasma P is concentrated. Region or other desired region. In addition, the gas supply passage extending to the region may be provided with a nozzle (not shown) for injecting the gas.

Here, when the plasma chemical vapor apparatus 1 according to the present invention is a film forming apparatus performing a film forming process, the film forming gas is HMDSO, TEOS, SiH ₄ , dimethylsilane, trimethylsilane, tetramethylsilane containing Si as a source gas. , HMDS, TMOS and the like, and may be C containing methane, ethane, ethylene, acetyrene and the like. Moreover, various source gases can be suitably selected according to the kind of film-forming, including titanium tetrachloride containing Ti, etc. As the reaction gas, oxygen, ozone, nitrous oxide, or the like can be used for forming the oxide, and for forming nitride, nitrogen, ammonia, or the like can be appropriately selected depending on the type of film formation. In addition, as the auxiliary gas, Ar, He, H _2, etc. may be selectively used, and various auxiliary gases may be selectively used depending on the type of film formation. In addition, the film forming gas suitable for the film forming process to be performed is not limited.

Alternatively, when the plasma chemical vapor apparatus 1 according to the present invention is an etching apparatus that performs an etching process, the etching gas as the process gas may be formed according to the material of the substrate S and the thin film deposited on the substrate S. Can vary. For example, the etching gas may be a Cl-based gas such as Cl2 or BCl3 and an F-based gas such as CF4, SF6, or NF3. In addition, various etching gases such as HF, hfacH, XeF2, Acetone, NH3, and CH4 may be selected. That is, the etching gas suitable for the etching process to be performed is not limited. In the etching process, a mask corresponding to the etching pattern may be included on the surface of the substrate S.

Alternatively, when the plasma chemical vapor apparatus 1 according to the present invention is a surface treatment apparatus that performs a surface treatment process, various process gases may be used in the use for changing the surface characteristics of the substrate S as the process gas. For example, gas for pre-treatment use may use gases such as Ar, H2, O2, N2, He, CF4, NF3, and gas for ashing use may use gas such as Ar, O2, CF4, and the like. In addition, a process gas suitable for the surface treatment process to be performed is not limited.

Meanwhile, as shown in FIGS. 1 and 2, the electrode 60 is disposed adjacent to the opposite surface of the process target surface of the substrate and receives power from the power supply unit 50 to be described later. ).

Looking at the position of the electrode 60 in more detail, the electrode 60 is located on the opposite side of the process target surface of the substrate (lower portion of the substrate when viewed in the drawing), so that both rollers of the above-described transfer stack 21 It is provided in the area between the supports 22.

At this time, it is preferable that a gap G of 0.1 mm to 5 mm is maintained between the electrode 60 and the substrate, which prevents substrate damage due to contact between the substrate being transferred and the electrode 60 and at the same time, the plasma P ) Is a range for densely concentrating plasma P on the process target surface of the substrate, which is the opposite surface between the substrate and the electrode 60. If the gap G between the electrode 60 and the substrate is larger than the range of 0.1 mm to 5 mm, the plasma P is formed on the back surface of the substrate rather than the surface to be processed, which is not preferable.

In this way, if the position of the electrode 60 is disposed on the opposite surface of the substrate to be processed and the plasma P is concentrated on the surface of the substrate, film formation, etching or surface treatment is performed on the surface of the hard substrate during the transfer of the substrate. The process can be made stable and fast.

On the other hand, as shown in Figure 3, in another embodiment of the present invention, the electrode 60 is provided as a hollow body and disposed adjacent to the opposite surface of the process target surface of the substrate, and the electrode body 61 inside It may include a magnetic field generating member 70 is provided. In this case, too, power is supplied to the electrode 60.

The electrode 60 of this type further includes the magnetic field generating member 70 in the embodiment of FIG. 1 described above with the position G of the electrode 60 and the gap G between the substrate and the substrate to be processed. By forming a magnetic field in the plasma P, the plasma P can be more stably and effectively concentrated.

As a result, even when the substrate is transferred, the film formation, etching or surface treatment process may be more stably and quickly performed on the process target surface of the hard substrate.

Here, as shown in FIGS. 3 to 7, when the electrode body 61 is viewed in the horizontal direction in the axial direction, the electrode 60 may be provided as a hollow tubular body having a cross section of the electrode body 61 having a circular cross section. In some cases, as shown in FIG. 8, the electrode body 61 may be provided as a hollow body having a polygonal cross section having opposing surfaces facing in parallel to opposite surfaces of the process target surface of the substrate S. FIG. Of course. Depending on the cross-sectional shape of the electrode body 61, the plasma characteristics that are concentrated on the process target surface of the substrate (S) may vary, which is within a range in which the plasma characteristics can be appropriately adjusted according to the type of the process to be performed or the type of the substrate. The shape of the electrode body 61 can be selected. For example, as shown in the drawing, all of the electrode bodies 61 may have a circular cross-sectional shape, and as shown in FIG. 8, an electrode body 61 having a circular cross section and an electrode body 61 having a polygonal cross section may be used together. have. Alternatively, although not shown, all of the electrode bodies 61 may have a polygonal cross-sectional shape. The shape of the electrode body 61 can be applied to both the above and the embodiments described later, of course.

On the other hand, as shown in Figure 4, in another form of the present invention may further include a heating means (80) provided on the side of the process target surface of the substrate having the same configuration as the above-described embodiments.

In this case, when performing a process on the process target surface of the hard substrate conveyed by the heat treatment effect by the heating means 80 can improve the characteristics of the substrate surface of the process. For example, if the process is a film forming process, a high speed and stable film forming process is performed by plasma (P) concentration on the process target surface of the substrate in the process of transferring the hard substrate, and the adhesion of the film layer is increased, the crystallization and the film properties are improved. effective.

In the present embodiment, as in the above-described embodiment of FIG. 1, the magnetic field generating member 70 may not be provided inside the electrode 60.

In various embodiments as described above, the electrode 60 (or the electrode body 61) may be provided in the form of a cylindrical hollow body or a polygonal hollow body. When the electrode 60 (or the electrode body 61) is provided as a cylindrical hollow body, it may be rotatably installed by a driving means (not shown).

The electrode 60 (or the electrode body 61) is preferably made of a metal material having excellent plasma resistance, excellent heat resistance, cooling efficiency and thermal conductivity, and excellent workability as a nonmagnetic material. It may be provided with a metal material such as iron, copper, stainless, magnesium, MO, Ti. In addition, the cooling water or the heating water for cooling or heating the electrode 60 may flow through the inside of the electrode 60 (or the electrode body 61).

In addition, the electrodes 60 may be provided as a single electrode 60 or a plurality of electrodes 60 according to the area of the substrate to be spaced apart from each other in a direction corresponding to the transfer direction of the substrate at a position adjacent to a surface opposite to the process target surface of the substrate. Can be.

At this time, each electrode 60 may be the same size or different sizes depending on the conditions, such as process conditions or substrate type, provided only in the form of a cylindrical hollow body or polygonal hollow body, or the electrode 60 of the cylindrical hollow body and polygonal hollow body form Can be used together.

Although not shown, the electrode 60 may be installed to be reciprocated to a region spaced apart from the region adjacent to the substrate to adjust the intensity of the plasma P and the size of the formation region. In this case, it is preferable that the above-described loading table reciprocating means (not shown) of the transport loading table 21 is omitted.

* The access and separation of the electrode 60 to the substrate may be implemented by providing an electrode reciprocating means (not shown). The electrode reciprocating means (not shown) is implemented in the form of a reciprocating movement of the electrode 60 using the lifting cylinder, as in the above-described mounting table reciprocating means (not shown), or a drive motor for rotating the rack, pinion and pinion, etc. It can be implemented in various forms, such as a reciprocating movement of the electrode 60 using.

By the mutual approach and separation of the substrate and the electrode 60 by the reciprocating movement of the electrode 60, it is possible to adjust the shape of the plasma P such as the intensity and size of the plasma P, which is concentrated on the process target surface of the substrate. . Thereby, an optimal process can be performed according to a process form, process conditions, etc.

On the other hand, the magnetic field generating member 70 is a central magnet 71 having a length corresponding to the internal length of the electrode body 61, and as shown in the cross-sectional view in FIG. It is preferable to have the outer magnet 72 arranged in a track shape around the magnet 71. The structure of the magnet is a structure for generating a race track-shaped plasma track on the outer surface of the electrode body 61 facing the process target surface of the substrate (S).

Here, the magnetic field generating member 70 may be provided as a single magnetic field generating member 70 having a central magnet 71 and an outer magnet 72 to be accommodated inside the electrode body 61, and the The magnetic field generating member 70 may be provided in the electrode body 61 according to the size and the like.

In addition, the magnetic field generating member 70 is provided in a form fixed to the inside of the electrode 60, as shown in Figure 6, or to adjust the direction of the magnetic field in the range toward the process target surface side of the substrate inside the electrode 60 It may be provided to adjust the rotation angle.

When the magnetic field generating member 70 is rotated to adjust the rotation angle, a separate angle adjusting means 73 may be provided to automatically or manually adjust the rotation angle of the magnetic field generating member 70. At this time, providing the angle adjusting means 73 in an automatic configuration is provided with a rotation support member 74 for providing a rotating shaft 75 inside the electrode 60 and supporting the magnetic field generating member 70 on the rotating shaft 75. It can be implemented with a configuration to rotate the rotary shaft 75 using a drive motor and the like. When the electrode 60 is a cylindrical hollow body, a driving motor (not shown) may be used together with the purpose of rotating the electrode 60 in addition to adjusting the rotation angle of the magnetic field generating member 70 including a clutch (not shown) configuration. have. Of course, the angle adjusting means 73 of the magnetic field generating member 70 may be a passive adjusting structure using a stopper structure or the like.

Alternatively, the magnetic field generating member 70 may be installed to reciprocate to a position spaced apart from the position approaching the substrate in the electrode 60, as shown in FIG. To this end, it may include a distance adjusting means 76 for reciprocating the magnetic field generating member 70, the distance adjusting means 76 and the guide portion 77 for supporting the reciprocating movement of the magnetic field generating member 70 and In addition, the magnetic field generating member 70 may be provided as a distance adjusting unit 78 to move the adjustable distance relative to the guide portion 77.

The guide portion 77 includes a fixed guide 77a toward one side of the inner circumferential surface of the electrode 60 from a central region inside the electrode 60 and a movement guide for moving the magnetic field generating member 70 relative to the fixed guide 77a. 77b may be provided. In this case, a rolling means such as a rolling roller or a bearing for smooth relative movement may be interposed between the fixed guide 77a and the movement guide 77b.

The distance adjusting unit 78 provides a driving force for relatively moving the movement guide 77b with respect to the fixed guide 77a. The distance adjusting unit 78 approaches the inner circumferential surface of the electrode 60 to adjust the movement distance of the movement guide 77b. As a driving force transmission means for pushing or pulling to a position spaced apart from the position to be moved, including a solenoid or a cylinder, a motive gear, a cam, a driven gear or a cam, etc. It can be arranged in an automatic configuration of.

Of course, the distance adjusting unit 78 forms a stopper structure between the fixed guide 77a and the movement guide 77b, and the operator manually opens the electrode 60 to manually adjust the movement distance of the movement guide 77b. It may be a configuration.

And the magnet polarity of the magnetic field generating member 70 may have a variety of polarity arrangement in the range that can stably dense the plasma (P) in the surface region or the adjacent region of the substrate (S).

By using the rotation angle control configuration or the distance control configuration of the magnetic field generating member 70, it is possible to easily change the shape, such as the intensity and size of the plasma (P) to the optimum form.

On the other hand, the power supply unit 50 supplies a high-frequency AC power to the electrode 60 as a power for generating the plasma (P). Here, the high frequency AC power source may use a high frequency (AC) power source or a high frequency (VHF) power source (VHF) power source to form a high density plasma (P). The polarity of the power source may selectively connect the positive electrode (+) or the negative electrode (−) to the electrode 60 according to the process conditions.

Of course, in some cases, the power supplied from the power supply unit 50 to the electrode 60 may be supplied to an AC power source or a DC power source or a Plus DC power source in addition to the high frequency AC power.

Plasma chemical vapor apparatus 1 according to the present invention having such a configuration, as described above, the position of the electrode 60 in the process of performing the process for the hard substrate, such that the position of the electrode 60 is the process target surface of the substrate Plasma P can be concentrated on the surface of the substrate by disposing on the opposite side of the substrate. As a result, even when the substrate is transferred, the film formation, etching or surface treatment process may be stably and quickly performed on the process target surface of the hard substrate.

In addition, when the electrode 60 further includes the magnetic field generating member 70, as described above, the plasma P may be more stably and effectively concentrated by forming a magnetic field on the process target surface of the substrate. As a result, even when the substrate is transferred, the film formation, etching or surface treatment process may be more stably and quickly performed on the process target surface of the hard substrate.

In addition, as described above, by further comprising a heating means 80 on the process target surface side of the substrate, it is possible to more effectively improve the characteristics of the surface of the substrate surface of the process when performing the process on the process target surface of the transferred rigid substrate have.

On the other hand, in the above description and the embodiment has been described an example in which a plurality of electrodes are provided, of course, may be provided with a single electrode in some cases.

As described above, according to the present invention, there is provided a plasma chemical vapor apparatus capable of carrying out any one of high quality film formation, etching or surface treatment at a high speed on a surface thereof while transferring a hard substrate.

It is possible to perform high quality film formation, etching or surface treatment at high speed on the surface while transferring the hard substrate.

Claims

In the plasma chemical vapor apparatus which makes a hard base material process object,

A vacuum chamber forming a vacuum space;

A load transfer part provided in the vacuum space to load-transfer the substrate from a supply side to a discharge side during the process;

At least one electrode disposed adjacent to a surface opposite to a process target surface of the substrate;

A power supply unit supplying power to the electrode;

A vacuum control unit for adjusting the degree of vacuum in the vacuum chamber;

A gas supply unit supplying a process gas to a process target surface side of the substrate;

Plasma chemical vapor apparatus comprising a.
The method of claim 1,

The electrode is

Hollow electrode body,

And a magnetic field generating member provided inside the electrode body to form a magnetic field toward the process target surface.
The method of claim 2,

The electrode body is

Plasma chemical vapor apparatus, characterized in that provided in the hollow tubular body having a circular cross section when viewed in the transverse direction in the axial direction, is rotatably installed.
The method of claim 2,

The electrode body has a plasma chemical vapor apparatus, characterized in that it has an opposing surface facing in parallel to the opposite surface of the process target surface of the substrate.
The method of claim 4, wherein

The electrode body is a plasma chemical vapor apparatus, characterized in that the hollow body having a polygonal cross section.
The method of claim 2,

The electrode is provided in plurality in intervals along the transport direction of the substrate,

The electrode bodies of the electrodes may be provided as a hollow tubular body having a circular cross section or a hollow body having a polygonal cross section when viewed in the horizontal direction in the axial direction, or provided as a hollow tubular body having a circular cross section and a hollow body having a polygonal cross section. Plasma chemical vapor apparatus.
The method according to any one of claims 1 to 6,

The process of performing the process

The substrate supplied from the supply side is stopped in the vacuum chamber by the loading transfer portion, or

The substrate is carried out in a process of continuously moving from the supply side to the discharge side by the loading transfer part;

And the substrate is reciprocated in a direction opposite to a conveying direction in the vacuum chamber in a state in which the substrate is loaded in the loading conveying unit.
The method of claim 7, wherein

Plasma chemical vapor apparatus, characterized in that a gap of 0.1mm to 5mm is formed between the electrode body and the substrate.
The method of claim 8,

Plasma chemical vapor apparatus further comprises a heating means provided on the process target surface side of the substrate.
The method of claim 8,

The electrode is a plasma chemical vapor apparatus, characterized in that is installed so as to reciprocate to the area spaced apart from the area adjacent to the substrate.
According to claim 8,

And the load transfer part load-transfers the substrate so that the substrate can reciprocate to an area spaced apart from an area adjacent to the electrode.
The method of claim 8,

And the magnetic field generating member is movable to a position spaced apart from a position adjacent to the substrate in the electrode.
The method of claim 8,

The magnetic field generating member is installed within the electrode so as to adjust the direction of the magnetic field in the range toward the process target surface side of the substrate.
The method according to any one of claims 1 to 7,

The process gas is a plasma gas, characterized in that the film forming gas or etching gas or surface treatment gas.