KR20110024222A - Target module and sputtering apparatus - Google Patents

Abstract

PURPOSE: A raw material supply unit and a sputtering apparatus are provided to improve the density of plasma by the formation of magnetic field of uniform intensity on the whole area of a target. CONSTITUTION: A raw material supply unit comprises a vertical target device. The vertical target device comprises a pair of targets(311,312), magnet units(321,322), and front and rear yokes(331,332). A pair of targets is placed vertically to the substrate. A pair of targets is faced to each other. The magnet unit is placed outside the target vertically to the target. Three or more magnetic materials(11,12,13) of the magnet unit are vertically separated from each other. The front yoke is separated from the rear side of the target and are placed oppositely to the target. The rear yoke is separated from the rear side of the front yoke and is placed oppositely to the front yoke.

Description

Raw material supply unit and sputtering apparatus {Target module and sputtering apparatus}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a raw material supply unit and a sputtering apparatus, and relates to a raw material supply unit and a sputtering apparatus capable of sputtering uniformly over the entire target area and forming a subsequent deposition film without damaging the substrate or the previously deposited deposition film.

Organic Light Emitting Devices (OLEDs) can emit light by themselves, eliminating the need for backlights and reducing power consumption. In addition, since it has a wide viewing angle and a fast response speed, the flat panel display device using the same can realize an excellent image without problems of viewing angle and afterimage. Such an organic light emitting device has a cathode, an electron transport layer, an emission layer, a hole transport layer, a hole injicton layer and an anode stacked on a substrate. It is configured. When driving rectification is applied through the two electrodes, electrons injected from the electron transport layer and holes injected from the hole injection layer recombine in the emission layer to generate excitons, and the excitons diffuse to emit light corresponding to the energy band gap. Is released.

On the other hand, the sputtering method is mainly used when forming the electrodes of the organic light emitting element, that is, the cathode or the anode. In a typical sputtering apparatus, a substrate is provided in a chamber, a target is disposed to face the substrate, and Ar gas is supplied into the chamber. When DC power is applied to the target, particles separated from the target by Ar + ions accelerated by the DC power are accelerated by the DC power and deposited on the substrate. At this time, the kinetic energy of the particles separated from the target is so large that the substrate may be damaged, and in recent years, the opposing target method is mainly used.

The opposite target device using the opposite target method includes at least one pair of target parts spaced apart from each other by a predetermined distance, and each of the target parts includes a target for supplying a raw material, and a front surface spaced apart from a rear surface of the target. A yoke, a rear yoke spaced apart from the rear surface of the front yoke, a magnetic body connecting between the front yoke and the rear yoke, a cover member covering the outside except the front of the target and accommodating the magnetic body, the front yoke and the rear yoke It includes. Here, each target of the pair of target portions is arranged to be perpendicular to the substrate and is configured to face each other. In addition, two conventional magnetic material is provided to arrange both ends of the front yoke and the rear yoke. At this time, one end of each of the two magnetic bodies is connected to the front yoke, the other end is connected to the rear yoke. This magnetic material generates a magnetic field to confine the plasma to the space between the two targets. Then, the plasma collides with two oppositely disposed targets to cause sputtering, and the position separated from the target due to sputtering is accelerated toward the substrate to form a thin film having a predetermined thickness. However, the conventional magnetic material is arranged to connect both ends of the front yoke and the rear yoke as described above. In such a case, the strengths of the magnetic fields at both ends of the target and at the center vary greatly. As a result, plasma concentration occurs at both ends of the target. Therefore, there is a problem in that the lifetime of the target is shortened as the entire target area is not uniformly eroded. In addition, by generating a low intensity magnetic field of 700G or less, there is a disadvantage that the density of the plasma trapped in the space between the two targets is not high.

In addition, the opposite target device as described above has an advantage of preventing the substrate from being damaged by particles of high energy by placing a pair of targets to face each other so as not to directly face the substrate, but having a low deposition rate. There is this. Thus, there is a problem in that the process time is long to form a deposition film having a desired thickness.

In order to solve the above problems, in a vertical target device in which a pair of opposing targets are arranged perpendicular to the substrate, a raw material supply unit and a sputtering device for uniformly sputtering the entire target area are provided. Further, there is provided a raw material supply unit and a sputtering apparatus capable of improving the film formation speed without damaging the substrate or the deposited film.

The raw material supply unit according to the present invention includes a pair of targets disposed to be perpendicular to the substrate and disposed to face each other, and arranged to be perpendicular to the target at an outer side of each of the pair of targets and spaced vertically apart from each other. And a magnet unit having the above magnetic body, a front yoke spaced apart from the rear surface of the pair of targets to face each other, and a rear yoke spaced from the rear surface of the front yoke to face each other. The thickness of the yoke is preferably formed thicker than the thickness of the rear yoke.

The magnetic material is arranged to connect both ends of the front yoke and the rear yoke and the center of the front yoke and the rear yoke.

The thickness of the front yoke is made 2 to 3 times thicker than the thickness of the back yoke.

The length of the magnetic body connecting the center of the front yoke and the rear yoke and the length of the magnetic body connecting the two ends of the front yoke and the rear yoke is made different.

The length of the magnetic body connecting the center portion of the front yoke and the rear yoke is 2% to 3% shorter than the length of the magnetic body connecting both ends of the front yoke and the rear yoke.

The magnetic bodies of both magnet parts provided on the outer side of each of the pair of targets and disposed to face each other are arranged to have opposite polarities.

The magnetic body of the magnet part provided outside each of the pair of targets is arranged to have different polarities in the same direction.

A plurality of targets arranged to be parallel to the substrate, a rear yoke spaced from the rear surface of the target to face the rear surface, and a plurality of targets arranged vertically between the target and the rear yoke and connected to both ends and the center of the rear yoke, respectively. It includes a horizontal target device provided with a magnet portion including a magnetic material.

A sputtering apparatus according to the present invention includes a chamber having an internal space, a vertical target device provided in the chamber and disposed so that a pair of opposing targets are perpendicular to the substrate, and a horizontal target device arranged such that the target is horizontal with the substrate. A raw material supply unit, and a substrate support portion disposed opposite to the raw material supply unit to move the substrate between a position facing the horizontal target device and a position facing the vertical target device.

According to the present invention, a sputtering apparatus includes a chamber having an internal space, a raw material supply unit provided in the chamber so that an opposite pair of targets is perpendicular to the substrate, and the raw material supply so that the pair of targets is horizontal with the substrate. A rotating device for rotating the unit, and a substrate support portion disposed opposite the raw material supply unit to move the substrate between the pair of targets.

The substrate processing method according to the present invention includes the steps of introducing a substrate into a chamber having an internal space, performing a first deposition process through a target perpendicular to the substrate using a raw material supply unit located in the chamber, and the substrate And forming a deposited film by performing a second deposition process through a target parallel to the target.

In the forming of the deposition film, the first deposition process is performed using a vertical target device of a raw material supply unit disposed in a chamber, and the second deposition process is a horizontal target device of a raw material supply unit disposed in the chamber. It is preferable to perform using.

After performing the first deposition process using the vertical target device, it is preferable to perform the second deposition process using the horizontal target device by placing the substrate opposite the horizontal target device using the substrate support.

In the forming of the deposition film, the first deposition process is performed by using a raw material supply unit in which a pair of targets are arranged perpendicular to the substrate, and the pair of targets is horizontal to the substrate using a rotating device. After the raw material supply unit is rotated to achieve a second deposition process, the raw material supply unit is used.

As described above, the present invention provides a vertical target device in which a pair of opposing targets is disposed perpendicular to a substrate, wherein three or more magnetic bodies are provided so that the magnetic bodies are disposed not only at both ends of the target but also at the central portion thereof. . In addition, the thickness of the front yoke is made 2 to 3 times thicker than the thickness of the rear yoke. As a result, a magnetic field of uniform intensity is formed over the entire target region, and the density of the plasma captured between the pair of targets can be improved.

The vertical target device in which the pair of targets facing each other in the chamber is perpendicular to the substrate, and the horizontal target device in which the target faces the substrate are provided together. Accordingly, damage to the substrate can be prevented by first forming a deposition film on the substrate using the vertical target device. After that, the deposition rate can be increased by forming a deposition film using a horizontal target device having a high deposition rate.

In addition, in the case of sequentially depositing a plurality of films made of different materials, the film may be deposited using a vertical target device or a horizontal target device in consideration of material and process characteristics. That is, in consideration of material properties and process characteristics, when the deposition rate is to be deposited slowly, a vertical target device may be used, and when the deposition is required at a high speed, a horizontal target device may be used. Therefore, there is an advantage in that any one of the vertical target device and the horizontal target device can be selectively used.

Hereinafter, with reference to the accompanying drawings will be described an embodiment according to the present invention in more detail. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention, and the scope of the invention to those skilled in the art. It is provided for complete information. Like reference numerals in the drawings refer to like elements.

1 is a schematic diagram of a sputtering apparatus according to a first embodiment of the present invention. 2 is a cross-sectional view showing a vertical target device according to a first embodiment of the present invention.

Referring to FIG. 1, a sputtering apparatus is disposed to face a chamber 100 having an internal space, a substrate support part 200 provided in the chamber 100 to support a substrate s, and a substrate support part 200. Thus, a raw material supply unit 600 for providing a raw material on the substrate s and a power supply unit 700 for applying power to the raw material supply unit 600 are included.

The chamber 100 is manufactured to have a rectangular cylindrical shape with an empty inside, and a predetermined reaction space for processing the substrate s is provided therein. In the present embodiment, the chamber 100 is formed in a rectangular cylindrical shape, but is not limited thereto, and is preferably manufactured to correspond to the shape of the substrate s. On the other hand, while the chamber 100 has been described as an integrated body, the chamber 100 may be divided into a chamber lid (Lid) covering the upper part of the lower chamber and the upper part of the lower chamber. In addition, a gas inlet 110 through which a sputtering gas such as argon (Ar) is introduced is provided at one side of the chamber 100, and a gas outlet 120 at which the sputtering gas is discharged to the outside is provided at the other side of the chamber 100. Prepared.

The substrate support 200 is mounted on the upper wall in the chamber 100 to support the substrate s drawn into the chamber 100. In the present exemplary embodiment, the substrate support part 200 is mounted on the upper wall of the chamber 100. However, if the substrate support part 200 faces the raw material supply unit 600 according to the position of the raw material supply unit 600 for supplying the raw material, the chamber is provided. It can be mounted anywhere in the 100. The substrate support part 200 includes a substrate mounting means 210 on which the substrate s is seated, and a driver 220 for moving the substrate mounting means 210. Here, the substrate placing means 210 may further include various chuck means for holding the substrate s by using mechanical force, vacuum suction force, electrostatic force, and the like. The driving unit 220 is a moving part 221 for elevating or rotating the substrate placing means 210 and a guide member connected to an upper part of the moving part 221 to allow the moving part 221 to move horizontally. 222). In addition, a shadow mask M may be disposed between the substrate support 200 and the raw material supply unit 600. That is, the shadow mask M having a predetermined pattern is disposed in front of the deposition surface of the substrate s so as to regulate the pattern of the deposition film to be deposited on the substrate s.

The raw material supply unit 600 according to the present exemplary embodiment includes a vertical target device 300 and a plurality of horizontal target devices 400 and 500, as shown in FIG. 1.

Referring to FIG. 2, the vertical target device 300 is arranged to be perpendicular to the substrate s and is spaced apart from each other, and the pair of targets 311 and 312 and the pair of targets 311 and 312 respectively. It includes a pair of magnet portions 321 and 322 provided. Each of the pair of magnet parts 321 and 322 includes at least three or more magnetic bodies 11, 12, and 13 disposed up and down, and the front and the rear of the three or more magnetic bodies 11, 12, and 13 are provided. A pair of yoke portions 331 and 332 are provided. It also includes a pair of cover members 341 and 342 that cover the outside of the targets 311 and 312 and accommodate the magnet portions 321 and 322 and the yoke portions 331 and 332, respectively.

The pair of targets 311 and 312 spaced apart from each other may be disposed to be perpendicular to the substrate s so as not to directly face the substrate s. As a result, particles of high energy that are separated from the pair of targets 311 and 312 may be accelerated directly to the substrate s, thereby preventing the substrate s from being damaged. This pair of targets 311 and 312 are made of a material to be deposited on the substrate s. For example, the pair of targets 311 and 312 may include metal materials such as aluminum (Al) and nickel (Ni), indium tin oxide (ITO), indium zinc oxide (IZO), and indium oxide (IO). It can be made using the same metal oxide material. In addition, although not shown, a target supporter (not shown) for supporting each of the pair of targets 311 and 312 may be separately provided. In order to prevent the targets 311 and 312 from being changed by the heat generated during the sputtering process, a cooling means (not shown) may be further provided on the target support (not shown).

Heterogeneous power is applied to each of the pair of targets 311 and 312 from the power supply unit 700. For example, the heterogeneous power includes a direct current (DC) power supplied to a sputtering main power and a radio frequency (RF) power supplied to a sub power. At this time, the RF power serves to lower the discharge voltage to lower the kinetic energy of the sputtered particles in the pair of targets 311 and 312, and the DC power serves to compensate for the low deposition rate when the RF power is used. do. Accordingly, when heterogeneous power is applied to each of the pair of targets 311 and 312 and ground power is applied to the sidewall of the chamber 100, discharge occurs in a space between the pair of targets 311 and 312 facing each other. . Therefore, plasma is generated by ionizing a sputtering gas such as argon (Ar). In this case, as described above, the pair of targets 311 and 312 are disposed to face each other so as not to directly face the substrate s, thereby preventing the substrate s from being damaged by particles having high energy. You can prevent it. In addition, in the present embodiment, as shown in FIG. 1, power is applied to each of the vertical target device 300 and the plurality of horizontal target devices 400 and 500 to be described later through one power supply 700. To this end, the power switch device 710 is connected between the vertical target device 300 and the power supply 700 and between the plurality of horizontal target devices 400 and 500 and the power supply 700. Thus, power may be selectively applied to each of the vertical target device 300 and the plurality of horizontal target devices 400 and 500 by using the power supply unit 700 and the power switch device 710. Of course, the present invention is not limited thereto, and a plurality of power supply units 700 may be provided to connect to the vertical target device 300 and the plurality of horizontal target devices 400 and 500, respectively.

The pair of yokes 331 and 332 serve to form a magnetic field of uniform intensity over the entire area of the pair of targets 311 and 312. The yoke portions 331 and 332 may include a front yoke 21 spaced apart from a rear surface of each of the pair of targets 311 and 312 and a rear surface spaced apart from a rear surface of the front yoke 21. And yoke 22. At this time, the magnet parts 321 and 322 are disposed to connect between the front yoke 21 and the rear yoke 22. Here, the thickness of the front yoke 21 is made thicker than the thickness of the rear yoke 22. In this embodiment, the thickness of the front yoke 21 is made to be two to three times thicker than the thickness of the rear yoke 22. For example, the front yoke 21 is 4 mm and the rear yoke 22 is 2 mm. The front yoke 21 and the rear yoke 22 are made of ferromagnetic or paramagnetic materials. In this embodiment, the front yoke 21 and the rear yoke 22 are manufactured by using a Fe-based plate. Of course, the present invention is not limited thereto, and may be manufactured using any one of iron, cobalt, nickel, and alloys thereof.

The magnetic field generated by the pair of magnets 321 and 322 serves to constrain the plasma in the space between the pair of targets 311 and 312. Each of the pair of magnet portions 321 and 322 is disposed between the front yoke 21 and the rear yoke 22. In order to effectively constrain the plasma in the space between the pair of targets 311 and 312, it is preferable to generate a magnetic field of 700 G (absolute value) or more. To this end, each of the pair of magnet parts 321 and 322 according to the present exemplary embodiment may include first and second magnetic bodies 11 and 13 disposed opposite to both ends of the front yoke 21 and the rear yoke 22. And a third magnetic body 12 disposed opposite to the central portions of the front yoke 21 and the rear yoke 22. Here, one end of each of the three magnetic bodies (11, 12, 13) is connected to the front yoke 21, the other end is connected to the rear yoke (22). As a result, the magnetic bodies 11, 12, and 13 are disposed at both ends and the center of the pair of targets 311 and 312. In addition, it is preferable that the magnetic bodies 11, 12, 13 of each of the pair of magnet portions 321, 322 are arranged to have opposite polarities. As a result, a magnetic field of uniform intensity is formed over the entire area of the pair of targets 311 and 312, thereby preventing the plasma from being concentrated in any one area. Thus, sputtering occurs uniformly over the entire area of the pair of targets 311 and 312. A detailed description of the magnetic field strength of the front surface of the pair of targets 311 and 312 according to the present embodiment will be described later.

In this embodiment, three magnetic bodies 11, 12, 13 were prepared. However, the present invention is not limited thereto, and three or more magnetic bodies (not shown) may be provided to connect the front yoke 21 and the rear yoke 22.

Each of the pair of cover members 341, 342 serves to prevent sputtering from occurring in unwanted portions of the targets 311, 312. To this end, each of the pair of cover members 341 and 412 may accommodate the magnet portions 321 and 322, the targets 311 and 312, and the yoke portions 331 and 332, and the targets 311 and 312. The corresponding side is made in the form of an open box.

3 is a cross-sectional view showing a vertical target device according to a modification of the first embodiment of the present invention.

Referring to Figure 3, Three magnetic bodies 11, 12, 13 are connected to connect between the front yoke 21 and the rear yoke 22. That is, the first and second magnetic bodies 11 and 13 are disposed to connect both ends of the front yoke 21 and the rear yoke 22, and the third magnetic body 12 is disposed to connect the center portion. At this time, the first and second connecting the length of the third magnetic body 12 connecting the center of the front yoke 21 and the rear yoke 22 and both ends of the front yoke 21 and the rear yoke 22. The magnetic bodies 11 and 13 are manufactured to have different lengths. In the present embodiment, the third magnetic body 12 is manufactured to have a length of 2% to 3% smaller than that of the first and second magnetic bodies 11 and 13. In addition, joints 315 and 325 are installed to connect the central portion of each of the front yoke 21 and the rear yoke 22 to the third magnetic material 12.

4A to 4B are schematic diagrams of a sputtering apparatus according to a second embodiment of the present invention. 5A and 5B are sectional views showing a raw material supply unit according to a second embodiment of the present invention. In the following, description overlapping with the first embodiment is omitted.

4A and 4B, a sputtering apparatus according to a second embodiment includes a chamber 100 having an internal space, a substrate support part 200 provided in the chamber 100 to support a substrate s, and a substrate support part ( A raw material supply unit 600 disposed to face the substrate 200 to provide a raw material on the substrate s by a sputtering method, and a power supply unit 700 for applying power to the raw material supply unit 600. Here, the rotation device 800 for rotating the raw material supply unit 600 is coupled to the raw material supply unit 600.

The raw material supply unit 600 includes a pair of targets 311 and 312 disposed to be perpendicular to the substrate s and spaced apart from each other, and a pair of magnets provided outside the pair of targets 311 and 312, respectively. 321, 322. Each of the pair of magnet parts 321 and 322 includes at least three or more magnetic bodies 11, 12, and 13 disposed up and down, and the front and the rear of the three or more magnetic bodies 11, 12, and 13 are provided. A pair of yoke portions 331 and 332 are provided. It also includes a pair of cover members 341 and 342 that cover the outside of the targets 311 and 312 and accommodate the magnet portions 321 and 322 and the yoke portions 331 and 332, respectively. At this time, The three magnetic bodies 11, 12, 13 spaced up and down are preferably arranged to have different polarities in the same direction as shown in FIGS. 5A and 5B. For example, when the polarity of one end of the first magnetic body 11 connected to the front yoke 21 is N, the second magnetic body is located above the first magnetic body 11 and connected to the front yoke 21. It is arranged so that the polarity of one end of (12) becomes S. In the same manner, the third magnetic body 13 is disposed to arrange the polarities of the third magnetic body 13 in the same direction. As described above, the pair of magnet parts 321 and 322 are disposed to have opposite polarities, and the magnetic bodies 11, 12 and 13 spaced up and down are provided in the pair of magnet parts 321 and 322, respectively. The polarities of the directions are arranged differently. Therefore, as the density of the plasma captured between the pair of targets 311 and 321 is increased by the magnetic field generated as described above, the deposition rate is improved.

The raw material supply unit 600 is connected to a rotating device 800 for rotating the raw material supply unit 600. Here, the rotation apparatus 800 includes a raw material supply unit 600 in which a pair of targets 311 and 321 are perpendicular to the substrate s, and each of the pairs of targets 311 and 321 is a substrate s. ) To rotate horizontally. In addition, the rotation apparatus 800 includes a raw material supply unit 600 in which a pair of targets 311 and 321 are disposed to be parallel to the substrate s, and each of the pair of targets 311 and 321 is a substrate s. Rotate vertically). That is, the pivoting device 800 rotates the raw material supply unit 600, so that the pivoting device 800 can perform both the above-described horizontal target device and vertical target device.

Here, the pivoting device 800 is the first support portion 810 coupled to one end of the cover members 341 and 342 parallel to the targets 311 and 322 among the areas of the pair of cover members 341 and 342. And a second support part 820 coupled to the other ends of the cover members 341 and 342 perpendicular to the targets 311 and 322, and are coupled to connect the first support part 810. And a rotation shaft 830 for rotating the 600. In this case, the first support part 810 is coupled to the cover members 341 and 342 to face the side wall of the chamber 100, and the second support part 820 is to cover the bottom of the chamber 100. , 342 is preferred. Of course, the present invention is not limited thereto, and any type of rotating device may be used as long as it can rotate the raw material supply unit 600.

Hereinafter, a method of rotating the raw material supply unit 600 by using the rotating device 800 will be described with reference to FIGS. 4A to 5B. First, as illustrated in FIGS. 4A and 5A, the raw material supply unit 600 is disposed such that a pair of targets 311 and 312 are perpendicular to the substrate s. At this time, the raw material supply unit 600 is fixed to the bottom of the chamber 100 by a second support portion 820 coupled to the other ends of the cover members 341 and 342 perpendicular to the pair of targets 311 and 312. . In addition, the magnetic bodies 11, 12, and 13 of each of the pair of magnet parts 321 and 322 are disposed to have opposite polarities, and are provided in each of the pair of magnet parts 321 and 322 and spaced vertically apart. (11, 12, 13) are arranged so that the polarities in the same direction are different. The density of the plasma captured between the pair of targets 311 and 321 is increased by the magnetic field generated by the arrangement of the magnetic bodies 11, 12 and 13 of the pair of magnet portions 321 and 322 as described above. . Therefore, by forming a magnetic field of uniform intensity over the entire area of the pair of targets 311 and 312, it is possible to prevent the plasma from being concentrated in any one area. As a result, sputtering occurs uniformly over the entire area of the pair of targets 311 and 312.

After the deposition process is completed using the raw material supply unit 600 disposed to be perpendicular to the substrate s as described above, as shown in FIGS. 4B and 5B, the rotation shaft 830 of the rotation apparatus 800 is used. To rotate the raw material supply unit 600. At this time, the raw material supply unit 600 is rotated so that the pair of targets 311 and 312 are parallel to the substrate s. Here, the raw material supply unit 600 is fixed to the bottom of the chamber 100 by a first support 810 coupled to one end of the cover members 341 and 342 parallel to the pair of targets 311 and 312. . At this time, the magnetic bodies 11, 12 and 13 of each of the pair of magnet parts 321 and 322 are arranged such that the polarity toward the targets 311 and 312 is configured in the form of SNS. The magnetic field generated by the pair of magnet portions 321, 322 captures the plasma generated in the space between the substrate s and the targets 311, 312, and the plasma collides with each target 311, 312. This causes sputtering. The particles sputtered and separated from each target 311 and 312 are accelerated toward the substrate s charged with the cathode and deposited on one surface of the substrate s, thereby forming a thin film having a predetermined thickness.

FIG. 6 is a graph showing the intensity of a magnetic field formed on a pair of target surfaces in the vertical target device according to the first embodiment shown in FIG. 2. FIG. 7 is a graph showing the strength of magnetic fields formed on a pair of target surfaces in the vertical target device according to the modification of the first embodiment shown in FIG. 3.

2 and 6, in the vertical target device 300 according to the first embodiment, Bx, which is the intensity of the magnetic field in a direction parallel to the surfaces of the pair of targets 311 and 312, is -900G to −. The 1000G value is shown. As described above, in the modified example, a magnetic field of uniform intensity is formed over the entire area of the pair of targets 311 and 312. In addition, as described above, a magnetic field between -900G and -100G is generated, so that a high density plasma is captured between the pair of targets 311 and 312.

3 and 7, in the vertical target device 300 according to the modification of the first embodiment, Bx, which is the intensity of the magnetic field in the direction parallel to the surfaces of the pair of targets 311 and 312, is -1100G. To -1200 G values. As described above, in the modified example, a magnetic field having a uniform intensity is formed over the entire area of the pair of targets 311 and 312 as compared with the related art. In addition, as described above, a magnetic field between -1100G and -1200G is generated, so that high density plasma is captured between the pair of targets 311 and 312.

As described above, in the vertical target device 300 according to the present exemplary embodiment, the first and second magnetic bodies 11 and 13 are disposed to connect both ends of the front yoke 21 and the rear yoke 22, and the center portion is connected to each other. The third magnetic body 12 is disposed. In addition, the thickness of the front yoke 21 is made 2 to 3 times thicker than the thickness of the rear yoke 22. As a result, a magnetic field having a uniform intensity of 700 G (absolute value) or more is formed over the entire area of the pair of targets 311 and 312. Therefore, a high density plasma is captured between the pair of targets 311 and 312, and the plasma evenly sputters the entire area of each target 311 and 312. In addition, by arranging the pair of targets 311 and 312 so as not to directly face the substrate s, it is possible to prevent the substrate s from being damaged by particles of high energy. However, such a vertical target device 300 has a disadvantage of low deposition rate. In order to solve this problem, the sputtering apparatus according to the present exemplary embodiment includes two horizontal target apparatuses 400 and 500 together with the vertical target apparatus 300 in the chamber 100 as shown in FIG. 1. Thus, in the present exemplary embodiment, the deposition target film is first formed on the substrate s by using a vertical target device 300 to a thin thickness of 10 mW to 500 mW, and then the first and second horizontal target devices 400 having a high deposition rate are formed. 500 to form a deposited film. Therefore, by using the vertical target device 300, the deposition film can be formed without damaging the substrate s. Thereafter, a deposition film having a target thickness can be formed at a high speed by forming a deposition film by using the first and second horizontal target devices 400 and 500 having a high deposition speed.

Referring to FIG. 1, the first horizontal target device 400 is disposed to face the substrate s to supply a raw material, and a rear yoke spaced apart from a rear surface of the target 410 ( 420 and a magnet portion 430 disposed between the target 410 and the rear yoke 420 and one end thereof is connected to the rear yoke 420. In addition, the cover member 440 covers the outer side of the target 410 and accommodates the magnet 430 and the rear yoke 420.

Here, the magnet part 430 includes first and second magnetic bodies 51 and 53 connected to both ends of the rear yoke 420, and a third magnetic body 52 connected to the center part. The three magnetic bodies 51, 52, and 53 are arranged such that the polarity toward the target 410 is configured in the form of NSN. Of course, the present invention is not limited thereto, and the polarity toward the target 410 may be arranged in the form of SNS. Accordingly, the magnetic field generated by the magnet 430 captures the plasma generated in the space between the substrate s and the target 410, and the plasma collides with the target 410 to cause sputtering. The particles sputtered away from the target 410 are accelerated toward the substrate s charged with the cathode and deposited on one surface of the substrate s, thereby forming a thin film having a predetermined thickness. As described above, in the first horizontal target device 400, the target 410 is disposed to face the substrate s so that the deposition rate is faster than that of the vertical target device 300.

The second horizontal target device 500 is manufactured in the same structure as the first horizontal target device 400 described above. However, in the present exemplary embodiment, the power supplied to the target 510 of the second horizontal target device 500 is greater than the power supplied to the target 410 of the first horizontal target device 400. As a result, the deposition rate of the second horizontal target device 500 is faster than that of the first horizontal target device 400.

In the present exemplary embodiment, two horizontal target devices 400 and 500 are provided, but the present invention is not limited thereto, and the horizontal target devices 400 and 500 may be provided in a number of two or less.

Hereinafter, an operation of the sputtering apparatus according to the first embodiment of the present invention will be described with reference to FIGS. 1 and 2.

First, the substrate s is seated on the substrate placing means 210 disposed in the chamber 100. Here, the substrate s uses a light-transmissive glass substrate. The lower electrode is formed on the substrate s using the sputtering apparatus according to the embodiment. At this time, in the embodiment, a lower electrode made of ITO / Ag / ITO is formed. To this end, a pair of targets 311 and 312 of the vertical target device 300 uses an ITO, and a target 410 of the first horizontal target device 400 uses an Ag. Of course, the present invention is not limited thereto, and the target 510 of the second horizontal target apparatus 500 may be formed of Ag. As described above, in the exemplary embodiment, the pair of targets 311 and 312 of the vertical target device 300 and the target 410 of the first vertical target device 400 are made of different materials, and thus the ITO / Ag / ITO To form a lower electrode. To this end, first, the substrate placing means 210 on which the substrate s is mounted is disposed on the upper portion of the vertical target device 300 by using the moving part 221 and the guide member 222. Then, a sputtering gas such as argon (Ar) is supplied into the chamber 100 through the gas inlet 110. Subsequently, plasma is generated by applying power to each of the pair of targets 311 and 312 of the vertical target device 300 using the power supply unit 700. The generated plasma is captured in the space between the pair of targets 311 and 312 by the magnetic field generated through the pair of magnet portions 321 and 322. In addition, the plasma collides with the pair of targets 311 and 312 to cause sputtering. In this case, the first and second magnetic bodies 11 and 13 are connected to the front yoke 21 and the rear yoke 22, respectively, and the third magnetic body 12 is connected to the central portion. In addition, the thickness of the front yoke 21 is two to three times thicker than the rear yoke 22. As a result, a magnetic field having a uniform intensity of 700 G (absolute value) or more is formed over the entire area of the pair of targets 311 and 312. As a result, the density of plasma captured in the space between the pair of targets 311 and 312 becomes high, and the plasma is evenly distributed. Accordingly, sputtering occurs over the entire surface of the pair of targets 311 and 312, and particles separated from the pair of targets 311 and 312 due to sputtering are deposited on the organic material layer to form an upper electrode. As described above, in the present embodiment, an ITO film having a thickness of 500 kV to 600 kV is formed using the vertical target device 300 at a deposition rate of 0.5 kW / s or less. For this reason, an ITO film with a good roughness can be formed, without damaging a board | substrate.

Subsequently, the substrate placing means 210 on which the substrate s is placed is disposed on the upper portion of the first horizontal target device 400 by using the moving part 221 and the guide member 222. Thereafter, power is supplied to the target 410 of the first horizontal target device 400 using the power supply unit 700 to generate plasma in the space between the target 410 and the substrate s. The plasma collides with the target 410 of the first horizontal target device 400 to cause sputtering. Particles separated from the target 410 are accelerated in the direction of the substrate s opposite to the target 410, thereby The Ag film is formed by depositing on one surface of (s). At this time, the Ag film of 100 kV to 150 kV is formed using the first horizontal target device 400 at a deposition rate of 0.5 kW / s or more.

Subsequently, the substrate placing means 210 on which the substrate s is placed is placed again on the upper portion of the vertical target device 300 by using the moving part 221 and the guide member 222. Thereafter, in the previous step, an ITO film having a thickness of 500 mW to 600 mW is deposited on the Ag film at a deposition rate of 0.5 mW / s or less in the same manner as when ITO is deposited using the vertical target device 300. As a result, a lower electrode made of ITO / Ag / ITO is formed on the substrate s.

As described above, in the present embodiment, an ITO film is first formed on the substrate s by using a vertical target device 300 to a thickness of 400 to 500 mW, and then an Ag film is formed using the first horizontal target device 400. Thereafter, an ITO film is formed on the Ag film by using the vertical target device 300. Therefore, a lower electrode made of ITO / Ag / ITO may be formed on the substrate s. At this time, since the roughness of the ITO affects the electrical characteristics of the organic light emitting device, the ITO is formed using the vertical target device 300 having a low deposition rate as described above. As described above, in the exemplary embodiment, the pair of targets 311 and 312 of the vertical target device 300 and the target 410 of the first horizontal target device 400 are manufactured to be made of different raw materials, thereby forming a material and a process. According to a condition, one of the vertical target device 300 and two horizontal target devices 400 and 500 may be selectively used.

Subsequently, the substrate s on which the lower electrode made of ITO / Ag / ITO is formed is moved to a deposition apparatus (not shown) for depositing an organic material layer, and then the lower electrode organic material layer is formed. Here, the organic material layer may include a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), and an electron transport layer (ETL). At this time, the stacking of the hole injection layer (HIL), the hole transport layer (HTL), the emitting layer (EML) and the electron transport layer (ETL) on the transparent electrode is sequentially performed. desirable. The organic material constituting the organic material layer may be added or omitted as necessary. Thereafter, the substrate s on which the lower electrode and the organic material layer are formed is moved to a deposition apparatus (not shown) for forming the upper electrode, thereby forming an upper electrode made of a metal material, for example, Ag, on the organic material layer.

In the above, the method of forming the lower electrode of the organic light emitting diode using the sputtering apparatus according to the first embodiment has been described, but is not limited thereto. The upper electrode of the organic light emitting diode may be formed. Hereinafter, a method of forming the upper electrode of the organic light emitting diode using the sputtering apparatus according to the first embodiment will be described.

First, although not shown in the substrate placing means 210 disposed in the chamber 100, the substrate s on which the transparent electrode and the organic material layer are formed is seated. Here, the substrate s may be a light transmissive substrate, and the transparent electrode may be any one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and in ₂ O ₃ . In this embodiment, ITO is used as the transparent electrode. In addition, the organic material layer may include a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML) and an electron transport layer (ETL). At this time, the stacking of the hole injection layer (HIL), the hole transport layer (HTL), the emitting layer (EML) and the electron transport layer (ETL) on the transparent electrode is sequentially performed. desirable. The organic material constituting the organic material layer may be added or omitted as necessary. Subsequently, in order to form an upper electrode on the organic material layer, the substrate placing means 210 on which the substrate s is mounted is mounted on the vertical target device 300 by using the moving part 221 and the guide member 222. Place them opposite. Then, a sputtering gas such as argon (Ar) is supplied into the chamber 100 through the gas inlet 110. Subsequently, plasma is generated by applying power to each of the pair of targets 311 and 312 of the horizontal target device 300 using the power supply unit 700. Here, the targets 311 and 312 use a material for forming an upper electrode, for example, an aluminum (Al) target. The generated plasma is captured in the space between the pair of targets 311 and 312 by the magnetic field generated through the pair of magnet portions 321 and 322. In addition, the plasma collides with the pair of targets 311 and 312 to cause sputtering. In this case, the first and second magnetic bodies 11 and 13 are connected to the front yoke 21 and the rear yoke 22, respectively, and the third magnetic body 12 is connected to the central portion. In addition, the thickness of the front yoke 21 is two to three times thicker than the rear yoke 22. As a result, a magnetic field having a uniform intensity of 700 G (absolute value) or more is formed over the entire area of the pair of targets 311 and 312. As a result, the density of plasma captured in the space between the pair of targets 311 and 312 becomes high, and the plasma is evenly distributed. Accordingly, sputtering occurs over the entire surface of the pair of targets 311 and 312, and particles separated from the pair of targets 311 and 312 due to sputtering are deposited on the organic material layer to form an upper electrode. As described above, in the present exemplary embodiment, the upper electrode having a thickness of 10 μs to 500 μs is formed using the vertical target device 300 at a deposition rate of 0.5 μs / s or less. For this reason, the upper electrode can be formed without damaging the organic material layer.

Subsequently, the substrate placing means 210 on which the substrate s is placed is disposed on the upper portion of the first horizontal target device 400 by using the moving part 221 and the guide member 222. Thereafter, power is supplied to the target 410 of the first horizontal target device 400 using the power supply unit 700 to generate plasma in the space between the target 410 and the substrate s. The plasma collides with the target 410 of the first horizontal target device 400 to cause sputtering. Particles separated from the target 410 are accelerated in the direction of the substrate s opposite to the target 410, thereby The upper electrode is formed by depositing on one surface of (s). At this time, the upper electrode is formed at a deposition rate of 0.5 kW / s or more using the first horizontal target device 400. That is, the upper electrode is formed on the organic layer at a low deposition rate of 0.5 μs / s or less using the vertical target device 300, and then at a deposition rate of 0.5 μs / s or more using the first horizontal target device 400. The upper electrode is formed continuously.

Subsequently, the substrate placing means 210 on which the substrate s is placed is disposed on the upper portion of the second horizontal target device 500 by using the moving unit 221 and the guide member 222. Thereafter, power is applied to the target 510 of the second horizontal target device 500 by using the power supply unit 700 to generate plasma between the target 510 and the substrate s. In this case, the power applied to the target 510 of the second horizontal target device 500 is greater than the power applied to the target 410 of the first horizontal target device 400. Accordingly, the second horizontal target device 500 forms the upper electrode at a faster speed than the first horizontal target device 400. That is, the deposition rate for forming the upper electrode becomes faster toward the vertical target device 300, the first horizontal target device 400, and the second horizontal target device 500.

As described above, in the present exemplary embodiment, a deposition film is formed on the substrate s by using a vertical target device 300 with a thin thickness of 10 mW to 500 mW, and then the first deposition rate is faster than that of the vertical target device 300. And forming upper electrodes using the second horizontal target devices 400 and 500. For this reason, the upper electrode can be formed while preventing the substrate s or the organic material layer from being damaged by the particles having high energy. In addition, by forming the upper electrode continuously through the first and second horizontal target devices 400 and 500, an upper electrode having a target thickness may be formed at a high speed.

In the present exemplary embodiment, the upper electrode is formed by using the vertical target device 300, the first horizontal target device 400, and the second horizontal target device 500. However, the present invention is not limited thereto, and an upper electrode may be formed using the first horizontal target device 400 and the second horizontal target device 500. For example, an upper electrode is first formed at a deposition rate of 0.5 μs / s or less using the first horizontal target device 400, and then a deposition rate of 0.5 μs / s or more using the second horizontal target device 500. It is also possible to form the upper electrode in succession.

Hereinafter, an operation of the sputtering apparatus according to the second embodiment of the present invention will be described with reference to FIGS. 4A and 5B. The content overlapping with the first embodiment will be omitted or briefly described.

First, although not shown in the substrate placing means 210 disposed in the chamber 100, the substrate s on which the transparent electrode and the organic material layer are formed is seated. Subsequently, in order to form the upper electrode on the organic material layer, the substrate placing means 210 on which the substrate s is mounted is moved to the upper portion of the raw material supply unit 600 by using the moving part 221 and the guide member 222. Place them opposite. At this time, it is preferable that the raw material supply unit 600 is disposed such that the pair of targets 311 and 312 are perpendicular to the substrate s. Then, a sputtering gas such as argon (Ar) is supplied into the chamber 100 through the gas inlet 110. Thereafter, power is applied to each of the pair of targets 311 and 312 of the raw material supply unit 600 using the power supply unit 700 to generate plasma. The generated plasma is captured in the space between the pair of targets 311 and 312 by the magnetic field generated through the pair of magnet portions 321 and 322. In addition, the plasma collides with the pair of targets 311 and 312 to cause sputtering. At this time, the magnetic bodies (11, 12, 13) of each of the pair of magnet portions (321, 322) are disposed so that the opposite polarity is different, the magnetic is provided in each of the pair of magnet portions (321, 322) spaced up and down The sieves 11, 12, and 13 are arrange | positioned so that the polarity of the same direction may differ. Accordingly, the density of plasma captured between the pair of targets 311 and 321 is increased by the magnetic field generated by the arrangement of the magnetic bodies 11, 12 and 13 of the pair of magnet portions 321 and 322, Plasma is evenly distributed. Accordingly, sputtering occurs over the entire surface of the pair of targets 311 and 312, and particles separated from the pair of targets 311 and 312 due to sputtering are deposited on the organic material layer to form an upper electrode. As described above, in the present embodiment, first, a pair of targets 311 and 321 have a thickness of 10 kPa to 500 kPa at a deposition rate of 0.5 kPa / s or less using the raw material supply unit 600 disposed so as to be perpendicular to the substrate s. To form the upper electrode. For this reason, the upper electrode can be formed without damaging the organic material layer.

Next, the raw material supply unit 600 is rotated using the rotation shaft 830 of the rotation device 800. At this time, the raw material supply unit 600 is rotated so that the pair of targets 311 and 312 are flush with the substrate s. Here, the raw material supply unit 600 is fixed to the bottom of the chamber 100 by a first support 810 coupled to one end of the cover members 341 and 342 parallel to the pair of targets 311 and 312. . In addition, the magnetic bodies 11, 12, and 13 of each of the pair of magnet parts 321 and 322 are arranged such that the polarity toward the targets 311 and 312 is configured in the form of SNS. Thereafter, power is supplied to the pair of targets 311 and 312 of the raw material supply unit 600 by using the power supply unit 700 to generate plasma in the space between each target 311 and 312 and the substrate s. Let's do it. The plasma collides with the pair of targets 311 and 312 of the raw material supply unit 100 to cause sputtering. Particles separated from the pair of targets 311 and 312 are accelerated toward the substrate s and are thus exposed to the substrate ( The upper electrode is formed by being deposited on one surface of s). At this time, the upper electrode is formed at a deposition rate of 0.5 kW / s or more using the raw material supply unit 600.

As described above, in the present exemplary embodiment, the raw material supply unit 600 is disposed such that the pair of targets 311 and 312 are perpendicular to the substrate s, and then the deposition film is formed on the substrate s with a thin thickness of 10 mV to 500 mV. To form. The raw material supply unit 600 is disposed such that the pair of targets 311 and 312 are parallel to the substrate s, and then a deposition film is formed on the substrate s to a desired thickness. For this reason, the upper electrode of the target thickness can be formed at high speed, preventing the board | substrate s or the organic material layer from being damaged by the particle | grains which have high energy.

In the present embodiment, an organic light emitting diode (OLED) including a transparent electrode, an organic material layer, and an upper electrode has been described as an example. However, the present invention is not limited thereto. have.

1 is a schematic diagram of a sputtering apparatus according to a first embodiment of the present invention.

2 is a cross-sectional view showing a vertical target device according to a first embodiment of the present invention;

3 is a sectional view showing a vertical target device according to a modification of the first embodiment of the present invention;

4A to 4B are schematic schematic diagrams of a sputtering apparatus according to a second embodiment of the present invention.

5A and 5B are cross-sectional views showing a raw material supply unit according to a second embodiment of the present invention.

FIG. 6 is a graph showing the intensity of a magnetic field formed on a pair of target surfaces in the vertical target device according to the first embodiment shown in FIG.

FIG. 7 is a graph showing the intensity of magnetic fields formed on a pair of target surfaces in the vertical target device according to the modification of the first embodiment shown in FIG.

<Description of Signs of Major Parts of Drawings>

100: chamber 300: vertical target device

311 and 312: first target 321 and 322: magnet part

331, 332: yoke portion 341, 342: cover member

Claims (14)

A pair of targets disposed to be perpendicular to the substrate and disposed to face each other; A magnet part disposed to be perpendicular to the target at an outer side of each of the pair of targets and having three or more magnetic bodies spaced vertically; A front yoke spaced apart from a rear surface of each of the pair of targets; A vertical target device including a rear yoke spaced apart from a rear surface of the front yoke, And a thickness of the front yoke is thicker than a thickness of the rear yoke. The method according to claim 1, The magnetic material is a raw material supply unit is arranged to connect both ends of the front yoke and the rear yoke and the central portion of the front yoke and the rear yoke. The method according to claim 1, And a thickness of the front yoke is two to three times thicker than that of the rear yoke. The method according to claim 2, And a length of the magnetic material connecting the centers of the front yoke and the rear yoke and a length of the magnetic material connecting both ends of the front yoke and the rear yoke. The method according to claim 4, The length of the magnetic material connecting the center of the front yoke and the rear yoke is 2% to 3% shorter than the length of the magnetic material connecting the both ends of the front yoke and the rear yoke. The method according to claim 1, And a magnetic material provided on an outer side of each of the pair of targets and disposed to face each other, such that magnetic materials of the two magnet parts are arranged to have opposite polarities. The method according to claim 6, And a magnetic body of the magnet part provided outside each of the pair of targets so as to have different polarities in the same direction. The method according to claim 1, A target disposed to be parallel to the substrate; A rear yoke spaced apart from the rear surface of the target to face the rear yoke; Raw material supply unit comprising a horizontal target device is arranged to be perpendicular between the target and the rear yoke is provided with a magnet portion comprising a plurality of magnetic materials respectively connected to both ends and the central portion of the rear yoke. A chamber having an interior space; A vertical target device provided in the chamber so that a pair of opposing targets are perpendicular to the substrate; A raw material supply unit having a horizontal target device arranged such that a target is horizontal with the substrate; And a substrate support disposed on an upper side of the raw material supply unit to move the substrate between a position facing the horizontal target device and a position facing the vertical target device. A chamber having an interior space; A raw material supply unit provided in the chamber such that a pair of opposing targets are disposed perpendicular to the substrate; A rotating device which rotates the raw material supply unit so that the pair of targets are parallel to the substrate; A sputtering apparatus comprising a substrate support portion disposed opposite the raw material supply unit and moving the substrate between a pair of targets. Introducing a substrate into a chamber having an interior space; Performing a first deposition process through a target perpendicular to the substrate using a raw material supply unit located in the chamber, and performing a second deposition process through a target parallel to the substrate to form a deposition film; Substrate processing method comprising. The method of claim 11, In the forming of the deposition film, the first deposition process is performed using a vertical target device of a raw material supply unit disposed in a chamber, and the second deposition process is a horizontal target device of a raw material supply unit disposed in the chamber. Substrate processing method performed using. The method according to claim 12, And performing a first deposition process using the vertical target device, and then placing the substrate on an upper side of the horizontal target device using a substrate support, and performing a second deposition process using a horizontal target device. The method of claim 11, In the forming of the deposition film, the first deposition process is performed by using a raw material supply unit in which a pair of targets are arranged perpendicular to the substrate, and the pair of targets is horizontal to the substrate using a rotating device. And rotating the raw material supply unit to achieve a second deposition process using the raw material supply unit.

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