WO2014088302A1

WO2014088302A1 - Plasma chemical vapour deposition device

Info

Publication number: WO2014088302A1
Application number: PCT/KR2013/011133
Authority: WO
Inventors: 안경준; 권오대
Original assignee: (주) 에스엔텍
Priority date: 2012-12-06
Filing date: 2013-12-04
Publication date: 2014-06-12

Abstract

The present invention relates to a plasma chemical vapour deposition device, the device comprising: a vacuum chamber; a vacuum adjusting unit for adjusting the degree of vacuum inside the vacuum chamber; a gas supply unit for supplying a process gas into the vacuum chamber; a circular electrode which is rotatably provided in the form of a roll on the inside of the vacuum chamber, and on the outer circumferential surface of which is formed an insulating layer; at least one magnetic field generating member which is provided on the inside of the circular electrode, and generates a magnetic field for forming a plasma on the outside of the circular electrode; a substrate-material-forwarding unit in which a substrate material is forwarded roll-to-roll in such a way that the substrate material wraps in close contact around a plasma-forming part of the circular electrode; and a power-source-supply unit for supplying power to the circular electrode. In this way, a plasma chemical vapour deposition device is provided which is capable of high-speed and high-quality film formation on a substrate of an insulating and electrically-conductive material.

Description

Plasma chemical vapor apparatus

The present invention relates to a plasma chemical vapor apparatus, and more particularly, to a plasma chemical vapor apparatus capable of forming a film at high speed and quality on an insulating and conductive material.

As a deposition method used as a technology for forming a thin film on a substrate in a semiconductor, display, solar cell, or packaging paper manufacturing field, it is a physical vapor deposition method (PVD method) such as vacuum deposition method or sputtering method, or plasma enhanced chemical vapor deposition method (Plasma Enhanced Chemical Vapor Deposition) method. Can be mentioned.

Among them, the plasma chemical vapor deposition method is a method of decomposing a source gas by plasma to deposit a thin film of a desired material on a substrate, and recently, a plasma chemical vapor apparatus using a cylindrical plasma cathode has attracted attention.

Plasma chemical vapor devices using cylindrical plasma cathodes are excellent in the strength of the cathode surface magnetic field and can concentrate the magnetic field in a small area to form a high quality plasma, so the quality of the thin film deposited on the substrate is excellent, and sputtering is common. Compared to the PVD deposition method, there is an advantage of providing a fast deposition rate.

Examples of plasma chemical vapor apparatuses using such cylindrical plasma cathodes are disclosed in Japanese Patent Application Laid-Open No. 2006-299361 (hereinafter referred to as “prior patent 1”) and Korean Patent No. 10-1148760 (hereinafter referred to as “prior patent 2”). It has been disclosed.

As shown in FIG. 1, as shown in FIG. 1, a pair of cylindrical plasma cathodes 210 are installed at a position in which a substrate S is transferred through a drum 220 in a roll-to-roll form and faces a surface of the drum 220. As a form, a plasma is formed from the cylindrical plasma cathode 210 toward the drum 220, and a thin film is deposited in a form in which a source gas decomposed by the plasma is deposited on the substrate S passing through the drum 220.

2 and 3, both of the cylindrical in the process of passing the substrate (S) the surface of the pair of cylindrical plasma cathode 110 in a form that the substrate (S) is transferred in a roll-to-roll manner. The thin film is deposited in such a manner that the source gas decomposed in the deposition region between the plasma cathodes 110 is deposited on the substrate S.

However, since the thin film is deposited on the substrate in the process of moving the substrate through the drum in the case of the conventional plasma chemical vapor apparatus, a faster and faster film formation speed is required in order to form a thick film on the substrate. Required.

For this purpose, a plasma chemical vapor apparatus may be proposed in which a plurality of pairs of cylindrical plasma cathodes are disposed at a position opposite to the drum surface to form a thick thin film at high speed, but the size of the apparatus may be increased as the number of cylindrical plasma cathodes increases. The problem arises that it enlarges and the manufacturing cost rises significantly.

On the other hand, the prior patent 2 is an alternative that can solve the problems of the plasma chemical vapor apparatus, such as the prior patent 1, this prior patent 2 is generated by the plasma when the plasma is generated by applying power to both cylindrical plasma cathode Most of the particles are in the form of neutral particles, cations and anions. In the same structure as the prior patent 1, the charged particles cations and anions are mainly captured by the magnetic field near the surface of the cylindrical plasma cathode, and only neutral particles reach the substrate. However, in the structure of the prior patent 2, since the substrate is in close contact with the surface of the cylindrical plasma cathode, not only neutral particles but also a large number of cations are strongly forced in the direction of the substrate by an external electric field, and a high density plasma region exists directly on the surface of the substrate. The film formation speed is greatly increased.

In addition, since the substrate passes through the cylindrical plasma cathode surface of one side of the pair of cylindrical plasma cathodes and then passes through the cylindrical plasma cathode of the other side, the thin film is deposited on the substrate, thereby allowing the thickness of the thin film to be thick and quickly formed.

However, in the case of this prior patent 2, since the substrate moves in close contact with the surface of the cylindrical plasma cathode to which power is input, the substrate is limited to an insulating material such as a plastic film.

This is because when the substrate is a conductive material such as a metal foil, the plasma is contacted with the cylindrical plasma cathode and the ground, the guide roll, the unwinding roll, the unwinding roll, and the like through the substrate to form a plasma.

Accordingly, the plasma chemical vapor apparatus of the type as in the prior patent 2 has a problem in recent years that it is difficult to meet the increasing demand of the film formation by the plasma chemical vapor deposition method on the substrate of the conductive material.

For example, in the case of graphene, which is in the spotlight recently, Cu Foil is used as a base material, and researches are actively conducted to switch from the conventional chemical vapor deposition method to the plasma chemical vapor deposition method in order to lower the process temperature. In addition, a thin substrate stainless steel substrate is used as a substrate for the flexible thin film solar cell. Since the stainless steel substrate is conductive, it is necessary to form an insulating thin film such as silicon oxide or silicon nitride before depositing an electrode on the substrate. .

The insulating thin film is advantageous in that the plasma chemical vapor deposition method is excellent in film formation speed and quality.

However, as described above, the plasma chemical vapor apparatus of the type has a limitation in the deposition rate, and the plasma chemical vapor apparatus of the type as the prior patent 2 has a limitation in the material of the substrate, as described above. There is a problem.

Accordingly, an object of the present invention is to provide a plasma chemical vapor apparatus capable of forming a film of high speed and high quality on a substrate of insulating and conductive material.

The object is, according to the present invention, a plasma chemical vapor apparatus, comprising: a vacuum chamber; A vacuum control unit for adjusting the degree of vacuum in the vacuum chamber; A gas supply unit supplying a process gas into the vacuum chamber; At least one circular electrode rotatably provided in a roll shape in the vacuum chamber and having an insulating layer formed on an outer circumferential surface thereof; At least one magnetic field generating member provided in the circular electrode to generate a magnetic field for plasma formation outside the circular electrode; A substrate transfer part for transferring the substrate in a roll-to-roll form so that the substrate adheres to the plasma forming portion of the circular electrode; It is achieved by a plasma chemical vapor apparatus comprising a power supply for supplying power to the circular electrode.

Here, the insulating layer is preferably formed by depositing or coating an insulating material of any one of an insulating ceramic, Teflon, silicon oxide, silicon nitride on the outer peripheral surface of the circular electrode.

Alternatively, the insulating layer may be formed by subjecting the insulating material of Al ₂ O ₃ , MgO, TiO ₂ to the outer circumferential surface of the circular electrode according to the material of the circular electrode.

In this case, the insulating layer may be an insulator surrounding the outer circumferential surface of the circular electrode.

Alternatively, the insulator may be provided in the form of a hollow tube, and the circular electrode may be inserted into the insulator.

Alternatively, the insulator may be provided in a sheet form and bonded to the outer circumferential surface of the circular electrode.

On the other hand, the circular electrode may be provided in plurality arranged adjacent to each other.

Here, the circular electrodes are preferably arranged adjacent to each other in at least one pair.

In this case, the circular electrodes may be disposed adjacent to each other in series, or may be disposed in plural pairs adjacent to each other in parallel.

In addition, the plasma forming portion is effectively formed in the region between the two adjacent circular electrodes.

On the other hand, the magnetic field generating member may be installed to reciprocate to a position spaced apart from the position approaching the inner peripheral surface of the circular electrode.

Alternatively, the magnetic field generating member may be installed to adjust the rotation angle in the circumferential direction of the electrode.

The apparatus may further include at least one drum wound around the substrate in an area adjacent to the circular electrode, and the plasma forming part may be formed in an area between the circular electrode and the drum.

On the other hand, the power supplied from the power supply to the circular electrode is preferably a high frequency AC power.

In this case, the high frequency AC power supply is effectively an HF (High Frequency: AC of 3 to 30 MHz) power or a VHF (Very High Frequency: AC of 30 to 300 MHz) power.

According to the present invention, there is provided a plasma chemical vapor apparatus capable of forming a film of high speed and high quality on a substrate of insulating and conductive material.

1 to 3 is a block diagram of a conventional plasma chemical vapor apparatus,

4 is a block diagram of a plasma chemical vapor apparatus according to the present invention,

5 is an enlarged view of an electrode unit region of FIG. 4;

6 to 11 are views showing an example of the arrangement of the various electrode units of the plasma chemical vapor apparatus according to the present invention.

4 and 5, the plasma chemical vapor apparatus 1 according to the present invention is a vacuum chamber 10 to form a vacuum space, and a vacuum control unit for adjusting the degree of vacuum inside the vacuum chamber 10 ( 20, a gas supply unit 30 for supplying process gas into the vacuum chamber 10, at least one electrode unit 40 rotatably provided in a roll form inside the vacuum chamber 10, and a substrate ( And a substrate transfer part 50 for unwinding and winding S) in a roll-to-roll form with respect to the electrode unit 40, and a power supply part 60 for supplying power to the electrode unit 40.

The vacuum chamber 10 may be manufactured to have an appropriately formed vacuum space by using a plate member and a frame such as a metal or an alloy having excellent pressure resistance and heat resistance.

In one region of the vacuum chamber 10, a shield cover 11 may be provided to partition a region different from a process region for performing a film forming, etching, or surface treatment process. Here, the process region is a plasma forming region formed outside the circular electrode 41, and the shield cover 11 is disposed to surround the process region, and one side (lower portion of the drawing) of the process region is the vacuum control unit 20. By vacuum evacuation.

The vacuum control unit 20 may include a configuration in which a configuration such as a vacuum pump and a valve is connected in various forms. Preferably, the low vacuum pump 21, the high vacuum pump 23, the plurality of valves 25, and the pressure control may be performed such that the vacuum exhaust may be performed in the order of low vacuum to high vacuum in the process of adjusting the degree of vacuum in the vacuum chamber 10. The valve 27, the high vacuum valve 29, etc. can be included suitably.

The gas supply unit 30 supplies a process gas into the vacuum chamber 10. The gas supply unit 30 includes a gas supply source 31 for supplying the process gas into the vacuum chamber 10, and a gas supply flow path extending from the gas supply source 31 into the vacuum chamber 10 (not shown). And a gas flow controller 37, a vacuum gauge 38, a valve 39, and the like, as a gas supply controller 35 that opens and closes a gas supply passage (not shown).

Here, the gas supply passage (not shown) may extend from the gas supply source 31 to a plurality of regions of the process region. For example, the gas supply passage (not shown) may have both circular shapes of the electrode unit 40 to be described later. It may be located in an upper region between the electrodes 41 and in a lower region of both circular electrodes 41. A gas supply passage (not shown) extending to each region may be provided with a nozzle (not shown) for injecting gas into the corresponding deposition region.

Here, when the plasma chemical vapor apparatus 1 according to the present invention is a film forming apparatus performing a film forming process, the film forming gas is HMDSO, TEOS, SiH ₄ , dimethylsilane, trimethylsilane, tetramethylsilane containing Si as a source gas. , HMDS, TMOS and the like, and may be C containing methane, ethane, ethylene, acetyrene and the like. Moreover, various source gases can be suitably selected according to the kind of film-forming, including titanium tetrachloride containing Ti, etc. As the reaction gas, oxygen, ozone, nitrous oxide, or the like can be used for forming the oxide, and for forming nitride, nitrogen, ammonia, or the like can be appropriately selected depending on the type of film formation. In addition, as the auxiliary gas, Ar, He, H _2, etc. may be selectively used, and various auxiliary gases may be selectively used depending on the type of film formation. In addition, the film forming gas suitable for the film forming process to be performed is not limited.

Alternatively, when the plasma chemical vapor apparatus 1 according to the present invention is an etching apparatus that performs an etching process, the etching gas as the process gas may be formed according to the material of the substrate S and the thin film deposited on the substrate S. Can vary. For example, the etching gas may be a Cl-based gas such as Cl2 or BCl3 and an F-based gas such as CF4, SF6, or NF3. In addition, various etching gases such as HF, hfacH, XeF2, Acetone, NH3, and CH4 may be selected. That is, the etching gas suitable for the etching process to be performed is not limited. In the etching process, a mask corresponding to the etching pattern may be included on the surface of the substrate S.

Alternatively, when the plasma chemical vapor apparatus 1 according to the present invention is a surface treatment apparatus that performs a surface treatment process, various process gases may be used in the use for changing the surface characteristics of the substrate S as the process gas. For example, gas for pre-treatment use may use gases such as Ar, H2, O2, N2, He, CF4, NF3, and gas for ashing use may use gas such as Ar, O2, CF4, and the like. In addition, a process gas suitable for the surface treatment process to be performed is not limited.

The electrode unit 40 may be provided as a single unit or a plurality of units having various arrangements in the process area. Hereinafter, a description of the single electrode unit 40 will be omitted, and a plurality of electrode units preferable for improving process performance efficiency will be omitted. An example in which 40 is provided will be described.

As a preferred example, the electrode unit 40 includes a pair of circular electrodes 41 spaced apart in parallel at positions adjacent to the process region, and a magnetic field generating member provided in both circular electrodes 41 to generate a magnetic field for plasma formation. (44).

Both circular electrodes 41 are provided to rotate about a rotation axis by driving means (not shown). Both of these circular electrodes 41 are supplied with a high frequency AC power from the power supply unit 60.

These circular electrodes 41 are preferably made of a metal material having excellent plasma resistance, excellent heat resistance, cooling efficiency and thermal conductivity, and excellent workability as a nonmagnetic material. Specifically, aluminum, iron, copper, stainless steel, or the like It may be provided with a metal material. In addition, the cooling water or the heating water for cooling or heating the circular electrode 41 may flow through the inside of each circular electrode 41.

On the other hand, an insulating layer 43 is formed on the outer circumferential surface of the two circular electrodes 41. The insulating layer 43 may be formed by depositing or coating an insulating material such as an insulating ceramic such as Al ₂ O ₃ , Teflon, silicon oxide, silicon nitride, or the like, and according to the material of the circular electrode 41. When 41 is aluminum, an insulating material such as Al ₂ O ₃ , MgO when the material of the circular electrode 41 is magnesium, and TiO ₂ when the material of the circular electrode 41 is Ti, is formed on the outer circumference of the circular electrode 41. The surface may be formed by surface modification such as anodization or plasma electrolysis.

Of course, the insulating layer 43 formed on the outer circumferential surface of both circular electrodes 41 may be provided in a form in which an insulator having a hollow tube shape surrounds the circular electrode 41. The insulating layer 43 may be provided in the form of inserting the circular electrode 41 or in bonding the insulating sheet to the outer circumferential surface of the circular electrode 41.

Herein, the diameter of each circular electrode 41 may be variously changed according to the area of the substrate S or the type of process conditions, and the diameter may be appropriately selected from 100 mm to 2000 mm. In this case, when the plurality of circular electrodes 41 are provided, all of the circular electrodes 41 may have the same diameter or may have different diameters. In addition, at least some of the circular electrodes 41 of the plurality of circular electrodes 41 may have the same diameter, and the remaining circular electrodes 41 may have different diameters.

The magnetic field generating member 44 includes a yoke plate 45 supported along the longitudinal direction on the central rotation axis of each circular electrode 41, and a magnet 46 supported on the yoke plate 45.

Here, the magnet 46 is disposed in a track shape around the central magnet 47 having a different polarity from the central magnet 47 and the central magnet 47 arranged in the longitudinal direction of the central region of the yoke plate 45. It has an outer magnet 48. The structure of the magnet 46 is a structure for generating a race track-shaped plasma track outside the circular electrode 41.

In addition, the magnets 46 of both magnetic field generating members 44 provided in the two circular electrodes 41 may be disposed so that magnetic poles having the same polarity face each other, or magnetic poles having different polarities may face each other. When the two magnetic field generating members 44 are disposed to face each other, plasma may be densely formed in the region between the two circular electrodes 41, and the substrate S may have two plasmas while winding the two circular electrodes 41. Pass the formation.

Of course, both magnetic field generating members 44 provided on both circular electrodes 41 may be arranged so as not to face each other.

On the other hand, the plasma chemical vapor apparatus 1 according to the present invention, as shown in Figure 6, to enable the reciprocating movement to a position spaced apart from the position that the magnetic field generating member 44 approaches the inner peripheral surface of the circular electrode 41 It may be installed.

This can be implemented by a configuration including a distance adjusting means 73 for reciprocating the magnet constituting the magnetic field generating member 44 in the radial direction of the circular electrode 41, the distance adjusting means 73 is a magnet The guide portion 74 for supporting the reciprocating movement of the, and the distance adjusting portion 77 for moving the magnet so as to adjust the moving distance with respect to the guide portion 74 can be provided.

At this time, the guide portion 74 moves relative to the fixed guide 75 while supporting the magnet and the fixed guide 75 toward one side of the inner circumferential surface of the circular electrode 41 from the inner central region of the circular electrode 41. It may be provided as a guide 76, and between the fixed guide 75 and the movement guide 76 may be interposed rolling means such as rolling rollers or bearings for smooth relative movement.

In addition, the distance adjusting unit 77 provides a driving force for relatively moving the movement guide 76 with respect to the fixed guide 75, the inner circumferential surface of the circular electrode 41 to adjust the movement distance of the movement guide 76 As a driving force transmission means for pushing or pulling to a position spaced apart from an approaching position, the motor includes a solenoid or a cylinder, a motor, a motor, a motor, or the like, driven by a motor, including a driven gear or cam and driven gear or cam. It can be provided with an automatic configuration such as configuration.

Of course, the distance adjusting unit 77 forms a stopper structure between the fixed guide 75 and the moving guide 76, and the operator opens the circular electrode 41 to adjust the moving distance of the moving guide 76 to several species. It may be a passive configuration.

In addition, the magnetic field generating member 44 may be provided to be fixed inside the circular electrode 41 or may be provided to adjust the rotation angle. When the magnetic field generating member 44 is fixed, only the circular electrode 41 may be rotated. When the magnetic field generating member 44 is rotated to adjust the rotation angle, as shown in FIG. 7, an additional angle adjusting means 73a is provided. It can be provided to automatically or manually adjust the rotation angle of the magnetic field generating member 44. At this time, to provide the angle adjusting means (73a) in an automatic configuration is provided with a rotation support member (74a) for supporting the magnetic field generating member 44 on the rotating shaft (75a) provided in the center of the circular electrode 41, such as a motor It can be implemented in a configuration to rotate the rotating shaft (75a) using. In this case, the motor (not shown) may be used together with the purpose of rotating the circular electrode 41 in addition to adjusting the rotation angle of the magnetic field generating member 44 including a clutch (not shown) configuration.

Such a distance control and rotation angle control configuration of the magnetic field generating member 44 may be applied to any number or arrangement of the circular electrode 41 in the above-described and later embodiments.

By controlling the distance and rotation angle of the magnetic field generating member 44, the strength of the magnetic field or the plasma forming portion can be adjusted.

On the other hand, the substrate transfer unit 50 allows the substrate (S) to move through the electrode unit 40 in a roll-to-roll manner to form a thin film on its surface in the film formation region. To this end, the substrate transfer part 50 includes a unwinding roll 51 for unwinding the wound substrate S, a winding roll 55 for winding the substrate S past the electrode unit 40, and a unwinding roll 51. A plurality of guide rolls 53 and a tension adjusting means (not shown) for guiding the substrate (S) unwound from the coil) to the winding rolls 55 through the circular electrodes 41 on both sides of the electrode unit 40 at an appropriate tension. ) May be provided.

Here, the substrate S may be provided with various synthetic resin materials such as PET, PEN, PES, polycarbonate, polyolefin, polyimide, or the like as a synthetic resin film or sheet which is an insulating material. In addition, the base material S may be a conductive material such as metal foil, Cu foil, stainless steel foil, or the like.

In addition, the unwinding roll 51, the unwinding roll 55, and the guide roll 53 may have the substrate S unwound from the unwinding roll 51 to have a circular electrode 41 on one side of the circular electrodes 41 on both sides. After roughing, the arrangement may be changed in various forms according to the conditions in the range of being wound on the winding roll 55 again past the circular electrode 41 on the other side.

On the other hand, the power supply unit 60 supplies high-frequency AC power to both circular electrodes 41 as power for plasma generation. The selection of the high frequency AC power source as the power source takes into account that the insulating layer 43 is formed on the outer circumferential surface of the circular electrode 41.

Here, the high frequency AC power supply is preferably an HF (High Frequency: AC alternating current of 3 to 30 MHz frequency) power source or VHF (Very High Frequency: AC alternating frequency of 30 to 300 MHz frequency) power source to form a high density plasma.

At this time, the polarity of the power source may be selectively connected to the positive electrode (+) or the negative electrode (-) in consideration of the plasma form, process quality and the like.

The process of performing the plasma chemical vapor process using the plasma chemical vapor apparatus 1 according to the present invention having such a configuration will be briefly described using the film forming process as an example.

First, the inside of the vacuum chamber 10 is vacuumed to an appropriate vacuum degree in the vacuum control unit 20. Then, the deposition gas is introduced into the process region at an appropriate flow rate from the gas supply unit 30, and the vacuum control unit 20 maintains the vacuum in the vacuum chamber 10 at an appropriate vacuum degree.

When the inside of the vacuum chamber 10 is formed in an appropriate vacuum state, the high frequency AC power is supplied from the power supply unit 60 to the circular electrode 41.

Then, a thin film is formed on the surface of the substrate S transferred through both circular electrodes 41 while plasma is formed by the magnetic fields generated by both magnetic field generating members 44 between the rotating both circular electrodes 41. do. In this case, since the insulating layer 43 is formed on the outer circumferential surface of both circular electrodes 41, the base material S may be the conductive base material S as described above. Of course, the insulating base material S may be sufficient.

In the film forming process in which the substrate S passes through both the circular electrodes 41, the substrate S is in close contact with both surfaces of the circular electrodes 41, so that not only neutral particles but also a plurality of cations are strongly directed by the external electric field. Force, and a high density plasma region is present on the surface of the substrate (S), thereby greatly increasing the deposition rate.

In addition, the thin film is deposited on the base material S in a process in which the base material S passes through the surface of the circular electrode 41 on one side of the pair of circular electrodes 41 and then passes through the circular electrode 41 on the other side. The thickness of the film can be thick and quickly formed with high quality.

On the other hand, when the film forming process of forming a thin film on the substrate (S) is completed, the power supply is cut off from the power supply unit 60, the gas supply unit 30 stops supplying gas. Then, the vacuum control unit 20 discards the vacuum in the vacuum chamber 10.

When the vacuum inside the vacuum chamber 10 is destroyed, the substrate S on which the thin film wound on the winding roll 55 is formed is taken out to the outside of the vacuum chamber 10, whereby the plasma chemical vapor apparatus 1 according to the present invention. The film forming process is finished.

As described above, the plasma chemical vapor apparatus 1 according to the present invention forms the insulating layer 43 on the outer circumferential surface of the circular electrode 41, thereby providing a high-speed and high-quality process for the substrate S of insulating and conductive materials. Is done.

Meanwhile, in the plasma chemical vapor apparatus according to the present invention, the circular electrodes 41 having the insulating layer 43 may be arranged in various forms, as shown in FIGS. 8 to 11.

First, as shown in FIG. 8, a plurality of circular electrodes 41 may be disposed adjacent to each other in series. In this case, the guide roll 53 of the substrate transfer part 50 is provided in an area between one side of the circular electrodes 41 so that the substrate S is wound around the guide roll 53 and the circular electrode 41 in a zigzag shape. By doing so, the corresponding step (any one of film formation, etching or surface treatment) can be performed on one surface of the substrate S. At this time, the magnetic field generating member 44 forms a magnetic field toward the substrate S, which winds the circular electrode 41, thereby densifying the plasma.

In addition, in the case of the embodiment of FIG. 8 described above, as shown in FIG. 9, it may also be used for performing a corresponding process on both sides of the substrate (S). At this time, the substrate S is wound around the circular electrode 41 in a zigzag form without winding the guide roll 53, the magnetic field generating members 44 of the adjacent circular electrodes 41 are in the opposite direction to each other ( A magnetic field is formed toward S) to condense the plasma. Thereby, the process (any one of film-forming, etching, or surface treatment process) can be performed on both surfaces of the base material S. FIG.

8 and 9, the insulating layer 43 is provided on the outer circumferential surfaces of the circular electrodes 41, so that a corresponding process of high speed and high quality is performed on the substrate S of insulating and conductive materials.

In addition, the plasma chemical vapor apparatus according to the present invention may have a shape in which a plurality of pairs of circular electrodes 41 having an insulating layer 43 are arranged in parallel as shown in FIG. 10. In this case, the magnetic field generating members 44 of the adjacent circular electrodes 41 may be disposed to face each other in a parallel direction or may be disposed to face each other in a series direction although not shown. In this embodiment, as the substrate S is exposed to the plasma is increased to a plurality of regions, the process may be performed at a higher speed and higher quality to the substrate S of the insulating and conductive material.

In addition, the plasma chemical vapor apparatus according to the present invention has at least a region adjacent to the circular electrode 41 in a form in which at least one pair of the circular electrodes 41 having the insulating layer 43 is arranged adjacent to each other as shown in FIG. 11. One drum 80 may have a form rotatably provided. The base material S is moved from the circular electrode 41 on one side via the drum 80 to wind the circular electrode 41 on the other side.

At this time, the magnetic field generating members 44 of the adjacent circular electrodes 41 are disposed to face the drum 80, so that plasma is concentrated in the regions a to d between the both circular electrodes 41 and the drum 80. .

Thereby, the substrate S is exposed to the plasma four times in the regions a to d between the two circular electrodes 41 and the drum 80 during the transfer process.

Of course, although not shown, the number of the circular electrodes 41 and the number of the drums 80 may be provided in a plurality, and in this case, the area where the substrate S is exposed to the plasma increases further.

As a result, the area of the substrate S exposed to the plasma is increased to a plurality of areas, so that the process may be performed at a higher speed and higher quality to the substrate S of the insulating and conductive material.

Although not shown, in some cases, a single circular electrode 41 and a single drum 80 are used and the magnetic field generated by the magnetic field generating member 44 is directed toward the drum 80 so that the substrate S is plasma. Two areas may be exposed. In addition, in some cases, the magnetic field generating member 44 may be located inside the drum 80 to form a magnetic field in a direction toward the circular electrode.

In addition, according to the present invention, it is obvious that the number or arrangement of the circular electrodes 41 having the insulating layer 43 may be configured in various forms.

As such, the plasma chemical vapor apparatus according to the present invention may perform a high-speed and high-quality film formation or etching or surface treatment process on an insulating and conductive material by forming an insulating layer on the outer circumferential surface of the circular electrode.

The present invention enables high-speed and high-quality film formation on an insulating and conductive material substrate in a plasma chemical vapor apparatus.

Claims

In the plasma chemical vapor apparatus,

Vacuum chamber;

A vacuum control unit for adjusting the degree of vacuum in the vacuum chamber;

A gas supply unit supplying a process gas into the vacuum chamber;

At least one circular electrode rotatably provided in a roll shape in the vacuum chamber and having an insulating layer formed on an outer circumferential surface thereof;

At least one magnetic field generating member provided in the circular electrode to generate a magnetic field for plasma formation outside the circular electrode;

A substrate transfer part for transferring the substrate in a roll-to-roll form so that the substrate adheres to the plasma forming portion of the circular electrode;

Plasma chemical vapor apparatus comprising a power supply for supplying power to the circular electrode.
The method of claim 1,

The insulating layer is plasma chemical vapor apparatus, characterized in that formed by depositing or coating an insulating material of any one of insulating ceramic, Teflon, silicon oxide, silicon nitride on the outer surface of the circular electrode.
The method of claim 1,

The insulating layer is plasma chemical vapor apparatus, characterized in that formed by surface modification treatment of the insulating material of any one of Al 2 O 3 , MgO, TiO 2 according to the material of the circular electrode on the outer peripheral surface of the circular electrode.
The method of claim 1,

And the insulating layer is an insulator surrounding the outer circumferential surface of the circular electrode.
The method of claim 4, wherein

The insulator is provided in the form of a hollow tube, the plasma electrode is characterized in that the circular electrode is inserted into the insulator.
The method of claim 4, wherein

The insulator is provided in the form of a sheet, the plasma chemical vapor apparatus, characterized in that bonded to the outer peripheral surface of the circular electrode.
The method of claim 1,

Plasma chemical vapor apparatus, characterized in that the plurality of circular electrodes are provided adjacent to each other.
The method of claim 7, wherein

And said circular electrodes are arranged adjacent to each other in at least one pair.
The method of claim 7, wherein

And said circular electrodes are arranged adjacent to each other in series.
The method of claim 7, wherein

And the circular electrodes are arranged in parallel in a plurality of pairs adjacent to each other.
The method according to any one of claims 7 to 10,

And the plasma forming portion is formed in a region between adjacent circular electrodes.
The method according to any one of claims 1 to 10,

And the magnetic field generating member is installed to reciprocate to a position spaced apart from a position approaching the inner circumferential surface of the circular electrode.
The method according to any one of claims 1 to 10,

The magnetic field generating member is installed to enable to control the rotation angle in the circumferential direction of the electrode.
The method according to any one of claims 1 to 10,

Further comprising at least one drum wound around the substrate in a region adjacent to the circular electrode,

And the plasma forming portion is formed in a region between the circular electrode and the drum.
The method according to any one of claims 1 to 10,

The power supplied to the circular electrode from the power supply unit is a plasma chemical vapor apparatus, characterized in that the high frequency AC power.
The method of claim 15,

The high frequency AC power source is a plasma chemical vapor apparatus, characterized in that the HF (High Frequency: AC of 3 ~ 30 MHz) power source.
The method of claim 16,

The high frequency AC power source is a plasma chemical vapor apparatus, characterized in that the VHF (Very High Frequency: 30 ~ 300 MHz AC) power.