KR20150002408A - Plasma chemical vapor apparatus - Google Patents

Abstract

The present invention relates to a plasma chemical vapor apparatus including: a vacuum chamber which has a plurality of independent vacuum spaces which are partitioned from each other; a vacuum adjusting unit which adjusts the degree of vacuum of the vacuum spaces; a circular electrode which is rotatably disposed in each of the vacuum spaces with at least part of the outer circumferential surface being positioned on the vacuum space, and a base material being wound around the outer circumferential surface; at least one magnetic field generating member which forms a magnetic field toward the base material wound around the circular electrode; and a gas supply unit which supplies process gas into the vacuum spaces. A plurality of processes can independently and successively be performed, and stable process and quality improvement can be ensured even in a high-speed process.

Description

[0001] PLASMA CHEMICAL VAPOR APPARATUS [0002]

The present invention relates to a plasma chemical vapor deposition apparatus, and more particularly, to a plasma chemical vapor deposition apparatus capable of independently and continuously performing a plurality of processes and improving process stability.

BACKGROUND ART As a technique applied to processes such as a process of forming a thin film on a substrate or etching a thin film or a surface treatment of changing the surface characteristics of a substrate in a semiconductor or display, a solar cell, or a packaging paper manufacturing field, physical vapor deposition methods such as a vacuum deposition method and a sputtering method PVD method), chemical vapor deposition (CVD), and the like.

Among them, plasma chemical vapor deposition apparatus based on chemical vapor deposition (CVD) can be applied as a method of performing a series of processes as described above on a substrate surface by decomposing a process gas by plasma, Process quality is superior to the devices using PVD method and is widely used recently.

One example of such a conventional plasma chemical vapor deposition apparatus is disclosed in Japanese Patent Laid-Open Publication No. 2011-80104 (hereinafter referred to as "prior patent").

The prior art discloses an example of a film-forming apparatus in which a decomposed process gas is deposited on a substrate in a process in which a substrate is transported in a roll-to-roll manner while a substrate is wound around a pair of circular electrodes while passing through the deposition region of the vacuum chamber.

A magnetic field generating member is provided inside the two circular electrodes, and the magnetic field formed by the magnetic field generating members causes the plasma to be concentrated in the film forming region adjacent to the substrate.

On the other hand, in this prior patent, the outer circumferential surface of a part of the two circular electrodes is positioned in a film-forming region which is blocked from other regions, thereby minimizing deposition of a film-forming material on a region other than the surface of the substrate during the film-forming process.

However, such a conventional plasma chemical vapor deposition apparatus can not independently control the film forming process performed on the two circular electrodes because the pair of circular electrodes is located in the other region and the blocked region of the vacuum chamber.

In addition, the conventional plasma chemical vapor deposition apparatus has a problem that a single film formation process is performed in a single film formation region, and a plurality of different process operations can not be continuously performed.

Furthermore, there is a limit in improving the process stability between the two circular electrodes in the form in which a pair of circular electrodes are disposed in a single film forming region. That is, the process gas decomposed by the plasma generated in the circular electrode on one side can be unstably deposited on the circular electrode and the substrate on the other side, and there is a limit to improvement in process safety. The limitation of the process stability is a problem that can not be performed at high speed and limits the quality improvement.

This problem is also applied to the case where the conventional plasma chemical vapor deposition apparatus is applied to the etching process or the surface treatment process in addition to the film forming process.

Accordingly, an object of the present invention is to provide a plasma chemical vapor deposition apparatus capable of performing a plurality of processes independently and continuously, and securing process stability and quality improvement even in a high-speed process.

According to the present invention, the above object is achieved by a plasma chemical vapor deposition apparatus comprising: a vacuum chamber having a plurality of vacuum chambers separated from each other; A vacuum regulator for regulating the degree of vacuum of the vacuum spaces; A circular electrode which is rotatably installed in each of the vacuum spaces in such a manner that at least a part of the outer circumferential surface thereof is located in each of the vacuum spaces, and the substrate is wound around the outer circumferential surface; At least one magnetic field generating member for forming a magnetic field on the substrate side for winding each of the circular electrodes; And a gas supply unit for supplying a process gas into the vacuum spaces.

Here, a plurality of guide rolls, which are rotatably provided in an adjacent region of the circular electrodes, and in which the substrate is not rolled or rolled when the process for the substrate is a process for one surface of the substrate or a process for both surfaces, .

It is also effective that the process gas is any one of an etching gas, a film forming gas and a surface treating gas.

And the gas supply unit independently adjusts the process gases supplied to the respective vacuum spaces.

At this time, the process gas supplied to each vacuum space from each of the gas supply units may be a process gas of a different material.

In addition, it is preferable that the vacuum controller controls the degree of vacuum of each vacuum space independently.

At this time, the diameters of the circular electrodes are all the same, or at least one of the circular electrodes may have a diameter different from that of the other circular electrodes, and the diameter of the circular electrode is effectively 100 mm to 2000 mm.

The magnetic field generating member may be provided inside or outside the respective circular electrodes.

Also, the magnetic field generating member may be installed to be capable of adjusting the rotation angle.

The plurality of magnetic field generating members may be provided.

According to the present invention, a plasma chemical vapor deposition apparatus capable of performing a plurality of processes independently and continuously and securing process stability and quality improvement even in a high-speed process is provided.

1 is a schematic diagram of a plasma chemical vapor deposition apparatus according to an embodiment of the present invention,
2 is a schematic diagram of a plasma chemical vapor deposition apparatus according to another embodiment of the present invention,
3 is a schematic view of a plasma chemical vapor deposition apparatus according to another embodiment of the present invention,
4 is a schematic diagram of a plasma chemical vapor deposition apparatus according to another embodiment of the present invention,
5 and 6 are enlarged views of an example of a circular electrode of a plasma chemical vapor deposition apparatus according to the present invention,
7 to 9 are schematic views of a plasma chemical vapor deposition apparatus according to another embodiment of the present invention.

1 and 2, the plasma chemical vapor deposition apparatus 1 according to the present invention includes a vacuum chamber 10 having a plurality of independent vacuum spaces 11, A magnetic field generating member 30 which forms a magnetic field on the side of the substrate S located in the vacuum space 11 and a magnetic field generating member 30 which is disposed on the circular electrode 20 And a vacuum regulating part 50 for regulating the degree of vacuum of the vacuum spaces 11 and supplying the process gas to the inside of the vacuum spaces 11, A gas supply unit 60, and a power supply unit 70 for supplying power to the circular electrode 20 and the like.

The vacuum chamber 10 is fabricated to have a plurality of independent vacuum spaces 11 partitioned by a plate-like member such as a metal or alloy excellent in internal pressure and heat resistance by using a frame or the like. The independent compartments of these vacuum spaces 11 can be composed of partition members 13 such as a shield cover. Here, it is preferable that the vacuum spaces 11 are positioned adjacent to each other.

Each of the circular electrodes 20 is rotatably installed in such a manner that a part of the outer circumferential surface thereof is located in each of the vacuum spaces 11 and the substrate S is disposed on the outer circumferential surface of the circular electrode 20 located in each vacuum space 11 And can be partially wound and transferred by the substrate transferring section 40 in a rolled form.

The circular electrode 20 is rotated for prevention of deterioration and generation of stable plasma when a plasma is generated. The rotation of the circular electrode 20 may be rotated using a driving means (not shown) such as a separate driving motor, And may be rotated by the driving force generated in the transmission section 40.

The circular electrode 20 is preferably made of a metal material excellent in plasma resistance, excellent in heat resistance, cooling efficiency and thermal conductivity, and excellent in workability as a nonmagnetic material. Specifically, the circular electrode 20 is made of aluminum, iron, copper, stainless, magnesium , MO, Ti, or the like. In addition, cooling water or heating water for cooling or heating the circular electrode 20 may be flowed into each of the circular electrodes 20.

In addition, the diameter of the circular electrode 20 can be variously changed depending on the conditions such as the area and the kind of the substrate S, and the diameter can be appropriately selected from 100 mm to 2000 mm. Of course, the circular electrodes 20 corresponding to the respective vacuum spaces 11 may have the same diameter as shown in FIGS. 1 and 2, and each circular electrode 20 may have a different diameter . Further, it goes without saying that the circular electrodes 20 of at least some of the plurality of circular electrodes 20 may have the same diameter and the remaining circular electrodes 20 may have different diameters.

The magnetic field generating member 30 may be provided inside the circular electrode 20 to form a magnetic field on the side of the substrate S located in the vacuum space 11 as shown in FIGS. At this time, the magnetic field generating member 30 has a central magnet 33 having a length corresponding to the length of the circular electrode 20, and a magnetic pole 33 having a polarity different from that of the central magnet 33 and arranged in a track shape around the central magnet 33 It is preferable that the outer magnet 35 be provided. The structure of the magnet 31 is a structure for generating a plasma track in the form of a race track outside the circular electrode 20.

Here, the polarity of the magnet 31 can be arranged in various forms within a range where the plasma can be stably concentrated in the surface region of the substrate S.

A plurality of the magnetic field generating members 30 may be provided in the circular electrode 20 depending on conditions such as the size of the circular electrode 20 or the like. The direction of the magnetic field may be adjusted by adjusting the rotation angle of the generating member 30. [

Of course, the magnetic field generating member 30 may be provided outside the circular electrode 20, and may be provided inside the vacuum space 11 as shown in FIG. 3 or outside the vacuum space 11 as shown in FIG. Also in this case, a plurality of the magnetic field generating members 30 can be provided, and the direction of the magnetic field can be adjusted by adjusting the rotation angle.

The rotation angle of the magnetic field generating member 30 may be manually or automatically configured by power supply. In the case of automatic configuration, the rotation angle of the magnetic field generating member 30 may be adjusted by using a driving motor Can be adjusted.

When the magnetic field generating member 30 is provided inside the circular electrode 20, the rotation angle of the magnetic field generating member 30 is adjusted by rotating the rotary shaft 37 at the center of the circular electrode 20, And a rotating support member 39 for supporting the magnetic field generating member 30 is provided on the rotating shaft 37 so that the rotating shaft 37 is manually or automatically rotated to rotate the magnetic field generating member 30 The rotation angle can be adjusted. 3 and 4 in which the magnetic field generating member 30 is provided outside the circular electrode 20, the rotation angle of the magnetic field generating member 30 can be adjusted by providing the rotation axis and the rotation supporting member.

Here, in the case where the rotation angle of the magnetic field generating member 30 is automatically controlled, the rotation shaft 37 may be rotated using a drive motor or the like (not shown). In this case, the drive motor may include a clutch And may be used to rotate the circular electrode 20 in addition to adjusting the rotation angle of the magnetic field generating member 30.

6, the plasma chemical vapor deposition apparatus 1 according to the present invention is configured such that the magnetic field generating member 30 is reciprocally movable to a position spaced apart from a position where the magnetic field generating member 30 approaches the inner circumferential surface of the circular electrode 20 May be installed.

This can be realized by a constitution including a distance adjusting means 76 for reciprocating the magnet 31 constituting the magnetic field generating member 30 in the radial direction of the circular electrode 20, May be provided with a guide portion 77 for supporting the reciprocating movement of the magnet 31 and a distance adjusting portion 78 for moving the magnet 31 so that the moving distance of the magnet 31 can be adjusted with respect to the guide portion 77.

At this time, the guide portion 77 is provided with a fixed guide 77a extending from the central region of the circular electrode 20 toward one side of the inner circumferential surface of the circular electrode 20, And a rolling means such as a rolling roller or a bearing for smooth relative movement may be interposed between the fixed guide 77a and the fixed guide 77b.

The distance adjusting portion 78 provides a driving force for relatively moving the fixed guide 77b relative to the fixed guide 77a and is configured to adjust the moving distance of the fixed guide 77b to the inner peripheral surface of the circular electrode 20 And a motor for driving the driving gear or the cylindrical cam by a motor including a solenoid or a cylinder, a driving gear, a cam, a driven gear, a cam, or the like as driving force transmitting means for pushing or pulling the driving gear And the like.

Of course, the distance adjusting portion 78 forms a stopper structure between the fixed guide 77a and the fixed guide 77b, and the operator adjusts the moving distance of the fixed guide 77b by opening the circular electrode 20, It may be a passive configuration.

On the other hand, as described above, the substrate transfer section 40 includes a winding roll 41 for winding the base material S, a winding roll 43 for winding the base material S while winding all the cylindrical electrodes, A guide roll 45 and a tension adjusting means (not shown) for guiding the substrate S unwound from the feed roll 41 to be wound on the winding roll 43 through the circular electrodes 20 with an appropriate tension have.

At this time, the base material S may be a synthetic resin film or sheet, which is a flexible material, or may be formed of various synthetic resin materials such as PET, PEN, PES, polycarbonate, polyolefin, polyimide or paper. Further, the substrate S may be a conductive material such as metal foil, Cu foil, stainless steel foil, or the like.

When the process to be performed is an etching process, a pattern-forming sheet such as a mask for forming an etch pattern may be transferred to the surface of the substrate S, Or a separate pattern-forming sheet supplying part may be provided in place in the process of carrying out the process so as to be transferred together with the substrate S.

The winding roll 41, the take-up roll 43 and the guide roll 45 are formed in a circular arc shape in accordance with the number and size of the circular electrode 20 provided corresponding to the vacuum space 11, To be wound around the winding roll 43 in a stable manner.

Meanwhile, the vacuum regulator 50 may control the degree of vacuum of each vacuum space 11 to the same degree of vacuum at the same time, or may independently control the degree of vacuum of each of the vacuum spaces 11. In the former case, the same process may be repeatedly performed in the respective vacuum spaces 11, and in the latter case, different processes may be continuously performed in the vacuum spaces 11. As shown in FIG. 2, the vacuum controller 50 may include a plurality of vacuum controllers 50 corresponding to the respective vacuum spaces 11, or may include a single vacuum controller 50 So that the degree of vacuum of the vacuum spaces 11 can be controlled as described above.

The configuration of the vacuum regulator 50 may be variously configured. For example, the vacuum regulator 50 may include a vacuum pump, a valve, or the like, connected in various forms, as in the general plasma chemical vapor deposition apparatus 1. A high vacuum pump 53, a plurality of valves 55, and a pressure regulator 55 so that the vacuum exhaust can be performed from a low vacuum to a high vacuum in the course of controlling the degree of vacuum in the vacuum space 11. [ The valve 57 and the high vacuum valve 59 may be included in appropriate numbers and forms.

The gas supply unit 60 includes a gas supply source 61 for supplying the process gas into the vacuum chamber 11 and a gas supply channel (not shown) extending from the gas supply source 61 into the vacuum chamber 11, And a gas flow controller 65 and a vacuum gauge 67 and a valve 68 as a gas supply regulator 63 for opening and closing a gas supply passage (not shown).

Here, the gas supply passage (not shown) may extend from the gas supply source 61 to a plurality of regions inside the vacuum space 11. For example, the gas supply passage may be a region adjacent to the surface side of the substrate S Or may be extended to a desired region for high-quality film formation. A nozzle 69 for spraying the gas may be provided in the gas supply passage extending to each region.

The gas supply unit 60 may also control the process gas supplied to each of the vacuum spaces 11 to be simultaneously supplied with the same process gas so that the process gas supplied to each of the vacuum spaces 11 is supplied to the different process gas. It can also be controlled independently. In the former case, the same process may be repeatedly performed in the respective vacuum spaces 11, and in the latter case, different processes may be continuously performed in the vacuum spaces 11. 1, the gas supply unit 60 may be provided with a single gas supply unit 60 or may be provided with a plurality of gas supply units 60 corresponding to the respective vacuum spaces 11, The process gas supply can be controlled as described above.

Here, in the case where the plasma chemical vapor deposition apparatus 1 according to the present invention is a film forming apparatus for performing a film forming process, the film forming gas may be at least one selected from the group consisting of HMDSO, TEOS, SiH ₄ , dimethylsilane, trimethylsilane, , HMDS, TMOS, etc., and may be C-containing methane, ethane, ethylene, acetylene, and the like. In addition, various raw material gases can be appropriately selected depending on the type of the film including titanium tetrachloride containing Ti and the like. As the reaction gas, oxygen, ozone, or nitrous oxide may be used for oxide formation, and nitrogen, ammonia, or the like may be appropriately selected for forming the nitride depending on the kind of the film. As the auxiliary gas, Ar, He, H _2, or the like can be selectively used, and various auxiliary gases can be selectively used depending on the kind of the deposition. The deposition gas suitable for the deposition process to be performed is not limited.

Alternatively, in the case where the plasma chemical vapor deposition apparatus 1 according to the present invention is an etching apparatus for performing an etching process, the etching gas as a process gas may be changed depending on a material of the substrate S to be etched and a thin film formed on the substrate S Lt; / RTI > For example, the etching gas may include Cl-based gases such as Cl2 and BCl3, and F-based gases such as CF4, SF6, and NF3. In addition, various etching gases such as HF, hfacH, XeF2, Acetone, NH3, and CH4 may be selected. That is, the etching gas suitable for the etching process to be performed is not limited. In the case of the etching process, a mask corresponding to the etching pattern may be included on the surface of the substrate S.

Alternatively, when the plasma chemical vapor deposition apparatus 1 according to the present invention is a surface treatment apparatus for performing the surface treatment process, various process gases may be used in the application for changing the surface characteristics of the substrate S as the process gas. For example, the gases for the pre-treatment use can be gases such as Ar, H2, O2, N2, He, CF4, NF3 and the like, and gases such as Ar, O2 and CF4 can be used for the ashing gas. The process gas suitable for the surface treatment process to be performed is not limited.

The power supply unit 70 may supply the high frequency AC power to the circular electrode 20 as a power source for plasma generation. Here, in order to form a high-density plasma, a high frequency AC power source can use an HF (High Frequency: AC power of 3 to 30 MHz) or a VHF (Very High Frequency: AC power of 30 to 300 MHz) The positive electrode (+) or the negative electrode (-) can be selectively connected to the circular electrode (20) according to the polarity.

An example of applying the plasma chemical vapor deposition apparatus 1 according to the present invention having such a configuration to the etching process will be briefly described.

The substrate S is loaded in the form of winding the circular electrode 20 located in each vacuum space 11 in the vacuum chamber 10 and then each vacuum space 11 is filled with plasma Vacuum to a vacuum suitable for etching. At this time, the vacuum degree of each vacuum space 11 may be the same as described above and may be different. In the case of the former case, the same etching pattern may be successively etched in the same vacuum space 11 in the same region of the substrate S to thereby remarkably improve the etching rate or to use a method for precise etching. In the latter case A method for independently etching different etching patterns in different areas of the substrate S in the respective vacuum spaces 11 and a method for sequentially etching the thin film layers formed on the substrate S .

After the substrate S is loaded, the etching gas is supplied into the respective vacuum spaces 11 at a proper flow rate in the gas supply unit 60, and the vacuum degree of each vacuum space 11 is properly maintained as described above.

At this time, the etching gas supplied from the gas supply unit 60 to each of the vacuum spaces 11 may be supplied with the same etching gas according to the above-described etching method, or a different etching gas may be supplied to the respective vacuum spaces 11.

At this time, when the power is supplied from the power supply unit 70 to each circular electrode 20, the circular electrode 20 rotates, and the magnetic field generated by the magnetic field generating member 30 causes the position A plasma of the outer surface of the circular electrode 20 is formed.

On the other hand, the substrate S moves through the respective vacuum spaces 11 in the form of winding the respective circular electrodes 20 as described above. When the substrate S passes through the region where the plasma is formed, The etching gas converted into the active species is strongly induced in the direction of the substrate S, whereby the etching process of the substrate S is performed.

In this process, the etched substrate S is finally recovered to the winding roll 43 as described above. When the recovery of the substrate S is completed, the power supply unit 70 is turned off and the gas supply unit 60 to stop the etching gas supply. Then, the vacuum of each vacuum space 11 is canceled by the vacuum regulator 50.

When the vacuum is broken, the etching process according to the present invention is completed by pulling out the etched substrate S to the outside.

This process can be easily applied to plasma deposition or surface treatment processes in which conditions such as the type of process gas and the degree of vacuum are different, even when the process to be performed is a film formation process or a surface treatment process.

In the plasma chemical vapor deposition apparatus 1 according to the present invention, the vacuum spaces 11 are formed as independent spaces, and the single circular electrode 20 and the magnetic field generating member 30 are formed so as to correspond to the respective vacuum spaces 11, So that an independent continuous process can be performed in each vacuum space 11 while the substrate S is continuously moved.

Further, the same process may be performed in each vacuum space 11, or different processes may be continuously performed.

In addition, a single circular electrode 20 is disposed in each vacuum space 11 to ensure process stability. That is, the process gas decomposed by the plasma generated in the circular electrode 20 of each vacuum space 11 does not affect the other side vacuum space 11, thereby improving process safety.

This improvement in process stability provides a high-speed process and quality improvement.

7 to 9, the plasma chemical vapor deposition apparatus 1 according to the present invention includes a plurality of guide rolls 45 arranged in each vacuum space 11, A one-side process or a two-side process may be selected in which the shape of the substrate S is adjusted with respect to the electrode 20 to perform the process on one side of the substrate S or perform the process on both sides of the substrate S .

For example, the shape of the substrate S wrapped around the guide roll 45 and the circular electrode 20 selected in the form as shown in FIG. 7 may be any one of the processes (film deposition, etching, ) Can be performed. At this time, the magnetic field generating member 30 forms a magnetic field on the side of the substrate S even when the circular electrode 20 is wound, and the plasma is concentrated.

Alternatively, the form in which the substrate S is wound around the guide roll 45 and the circular electrode 20 selected in the form as shown in Figs. 8 and 9 is that the substrate S is coated on both surfaces of the substrate S in the process (film deposition, Can be performed. At this time, the magnetic field generating members 30 of the adjacent circular electrodes 20 form a magnetic field toward the substrate S in mutually opposite directions, thereby causing the plasma to be concentrated.

In this type of plasma chemical vapor deposition apparatus 1, the conditions such as the kind of the process gas and the degree of vacuum are changed into various forms in the same manner as the above-described embodiments, and the film formation or the surface treatment process is performed on one surface or both surfaces of the substrate S The present invention can be applied easily.

INDUSTRIAL APPLICABILITY As described above, according to the present invention, a plasma chemical vapor deposition apparatus capable of performing a plurality of processes independently and continuously and securing process stability and quality improvement even in a high-speed process is provided.

10: Vacuum chamber 11: Vacuum space
13: partition member 20: circular electrode
30: magnetic field generating member 31: magnet
37: rotation shaft 39: rotation support member
40: substrate transferring part 50: vacuum regulating part
60: gas supply unit 70: power supply unit

Claims (14)

In a plasma chemical vapor deposition apparatus,
A vacuum chamber having a plurality of independent vacuum chambers;
A vacuum regulator for regulating the degree of vacuum of the vacuum spaces;
A circular electrode which is rotatably installed in each of the vacuum spaces in such a manner that at least a part of the outer circumferential surface thereof is located in each of the vacuum spaces, and the substrate is wound around the outer circumferential surface;
At least one magnetic field generating member for forming a magnetic field on the substrate side for winding each of the circular electrodes;
And a gas supply unit for supplying a process gas into the vacuum spaces. The method according to claim 1,
A plurality of guide rolls rotatably provided in an adjacent region of the circular electrodes and the substrate is not rolled or rolled when the process for the substrate is a process for one surface of the substrate or a process for both surfaces Wherein the plasma chemical vapor deposition apparatus comprises a plasma chemical vapor deposition apparatus. 3. The method of claim 2,
Wherein the process gas is any one of an etching gas, a deposition gas, and a surface treatment gas. The method of claim 3,
Wherein the gas supply unit independently adjusts the process gases supplied to the respective vacuum spaces. 5. The method of claim 4,
Wherein the process gas supplied to each of the vacuum spaces in each of the gas supply units is a process gas of a different material. 6. The method according to any one of claims 1 to 5,
Wherein the vacuum controller adjusts the degree of vacuum of each of the vacuum spaces independently. The method according to claim 6,
Wherein the diameters of the circular electrodes are all the same or at least one of the circular electrodes has a diameter different from that of the other circular electrodes. 8. The method of claim 7,
Wherein the diameter of the circular electrode is 100 mm to 2000 mm. 8. The method of claim 7,
Wherein the magnetic field generating member is provided inside each of the circular electrodes. 10. The method of claim 9,
Wherein the magnetic field generating member is installed to be capable of adjusting the rotation angle. 10. The method of claim 9,
Wherein the plurality of the magnetic field generating members are provided in each of the circular electrodes. 8. The method of claim 7,
Wherein the magnetic field generating member is provided outside the respective circular electrodes to form a magnetic field on the substrate side. 13. The method of claim 12,
Wherein the magnetic field generating member is installed to be capable of adjusting the rotation angle. 13. The method of claim 12,
Wherein the plurality of magnetic field generating members are provided.

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