KR101632398B1 - Plasma chemical vapor apparatus - Google Patents

Abstract

The present invention relates to a plasma chemical vapor deposition apparatus, comprising: a vacuum chamber having a processing region in which a substrate is located; A vacuum controller for controlling a degree of vacuum in the vacuum chamber; A gas supply unit for supplying a process gas into the vacuum chamber; At least one electrode unit installed in the vacuum chamber to form a plasma in the process region; A power supply unit for supplying power to the electrode unit; And a plasma blocking block provided inside the vacuum chamber to block plasma generated in the electrode unit from being generated in an unnecessary region outside the process region.

Description

[0001] Plasma chemical vapor apparatus [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a plasma chemical vapor deposition (CVD) apparatus, and more particularly, to a plasma chemical vapor deposition apparatus capable of preventing a plasma from being formed in a non- .

BACKGROUND ART As a technology applied to a process of forming a thin film on a substrate or etching a thin film or a surface treatment of changing the surface characteristics of a substrate in a semiconductor, a display, a touch panel, a solar cell manufacturing field, etc., a chemical vapor deposition (CVD) ).

Among them, the plasma chemical vapor deposition apparatus based on chemical vapor deposition (CVD) can be applied as a method of performing film deposition, etching, and surface treatment on the substrate surface by decomposing the process gas by plasma , Process speed and process quality are superior to those using PVD methods such as sputtering and have recently been widely used.

As one example of such a plasma chemical vapor deposition apparatus, a conventional plasma CVD apparatus 101 as a film forming apparatus has been disclosed in Japanese Patent Application Laid-Open No. 2006-299361 (hereinafter referred to as "prior patent").

As shown in FIG. 1, the prior art discloses a structure for densifying a plasma on a surface of a substrate S positioned inside a vacuum chamber 110, and includes a pair of hollow electrodes including a magnet 130 therein, The substrate S is installed inside the vacuum chamber 110 such that the substrate 120 can be continuously rotated.

When a power source is supplied to the electrode 120, a magnetic field is formed from the magnet 130. When a film forming gas is supplied into the vacuum chamber 110, a magnetic field formed by the magnet 130 causes the plasma to be concentrated in the film forming region , Raw material particles of the film forming gas decomposed on the surface of the substrate (S) are formed.

Here, since the electrode 120 is continuously rotated in one direction, it is possible to minimize the adherence of the raw material particles due to gas decomposition for film formation to the electrode 120 in addition to the substrate.

However, in such a conventional plasma chemical vapor deposition apparatus, even when the electrode is continuously rotated, the phenomenon that the raw material particles adhere to the electrode or the like on the surface of the substrate as the gas is decomposed is inevitably generated.

As a result, there has been a problem that particles are generated due to the peeling phenomenon of the raw material particles attached to the electrode. Such particle generation poses a serious problem of damaging the deposition layer of the substrate.

Further, there is a problem that an abnormal arc discharge is generated by the plasma as the gas raw material particles are formed on the electrode. Such an arc discharge causes a problem that a normal film forming process can not be performed due to a failure of the power supply system or a driving stop of the apparatus due to the cutoff of the power supply for protecting the power supply.

Also, in the case of an etching apparatus or a surface treatment apparatus using such a plasma chemical vapor deposition apparatus, the process gas necessary for the process is introduced into the vacuum chamber, so that the gas by- There is a problem in that it is attached.

The raw material particles adhere to the entire outer surface of the electrode constantly by the continuous rotation of the electrode, so that one electrode can only use for a single cycle life, resulting in a problem that the usability is inefficient. Accordingly, in the case of the conventional plasma chemical vapor deposition apparatus, it is necessary to take the inconvenience of frequently cleaning or replacing the electrodes, which causes a decrease in the productivity due to a decrease in the use efficiency of the electrodes.

Particularly, the plasma generated by the electrode accelerates the shortening of the use period of the electrode by increasing the rate at which the raw material particles adhere to the outer circumferential surface of the electrode by generating a small amount of plasma in the region other than the magnetic field region and the region where the extra- There is a problem.

1. Japanese Laid-Open Patent Application No. 2006-299361 (2006.11.02)

Accordingly, it is an object of the present invention to provide a plasma chemical vapor deposition apparatus which can prevent a plasma from being formed in a plasma unnecessary region rather than a process region, thereby extending the service life of the electrode and improving the use efficiency thereof.

This object is achieved according to the present invention by a plasma chemical vapor deposition apparatus comprising: a vacuum chamber having a processing region in which a substrate is located; A vacuum controller for controlling a degree of vacuum in the vacuum chamber; A gas supply unit for supplying a process gas into the vacuum chamber; At least one electrode unit installed in the vacuum chamber to form a plasma in the process region; A power supply unit for supplying power to the electrode unit; And a plasma interception block provided inside the vacuum chamber to block plasma generated in the electrode unit from being generated in an unnecessary region outside the process region.

Here, it is effective that the plasma blocking block is floating or grounded with respect to the vacuum chamber.

It is more preferable that the plasma blocking block has a plasma blocking region that is recessed in a shape corresponding to a part of the outer circumference of the electrode so as to surround a part of the outer circumference of the electrode corresponding to the region other than the process region with a gap therebetween.

At this time, it is effective that the gap is 0.5 mm to 100 mm.

The plurality of electrode units may be provided, and the plasma cut-off region may be provided in a number corresponding to the electrode unit.

Also, a block connection region facing the process region may be formed between the plasma cut-off regions.

At this time, the surface of the block connecting region preferably has a surface roughness.

On the other hand, it is preferable to have an electrode of a hollow body and at least one magnetic field generating member provided inside the electrode and forming a magnetic field outside the electrode.

The apparatus may further include a supply roll for supplying the wound substrate to the process region, a drum provided in the process region for winding the substrate, and a recovery roll for winding the substrate around the drum to wind the process region, ; The electrode unit may be arranged such that at least one of the electrode units is arranged to form a plasma in the process region in an area adjacent to the drum.

According to the present invention, there is provided a plasma chemical vapor deposition apparatus capable of preventing the plasma from being formed in a plasma unnecessary region rather than a process region, thereby extending the service life of the electrode and improving the use efficiency.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view schematically showing an example of a conventional plasma chemical vapor deposition apparatus,
FIG. 2 illustrates a plasma chemical vapor deposition apparatus according to an embodiment of the present invention. FIG.
3 is a view showing an example of an electrode unit region of a plasma chemical vapor deposition apparatus according to the present invention,
4 and 5 are views showing an example of an electrode unit of a plasma chemical vapor deposition apparatus according to the present invention,
6 to 9 are views showing an example of arrangement of electrode units in a plasma chemical vapor deposition apparatus according to the present invention,
10 is a view showing another example of the electrode unit of the plasma chemical vapor deposition apparatus according to the present invention,
11 is a plasma chemical vapor deposition apparatus according to another embodiment of the present invention.

2, the plasma chemical vapor deposition apparatus 1 according to the present invention includes a vacuum chamber 300 for forming a vacuum space in which a substrate S is disposed, a vacuum chamber 300 for controlling the degree of vacuum inside the vacuum chamber 300, An electrode unit 600 installed in the vacuum chamber 300 to adjust the plasma and an electrode unit 600 disposed in the vacuum chamber 300. The electrode unit 600 includes a vacuum control unit 400, a gas supply unit 500 for supplying a process gas into the vacuum chamber 300, And a power supply unit 700 for supplying power.

The vacuum chamber 300 can be manufactured to have a vacuum space of a proper type by using a plate material such as a metal or an alloy having excellent pressure resistance and heat resistance, and a frame. In the vacuum chamber 300, a process region 310 for performing a series of processes on the surface of the substrate S is formed in a region adjacent to the electrode unit 600.

At this time, the substrate S is supplied to the process region 310 inside the vacuum chamber 300 either outside or inside the vacuum chamber 300 to keep the process region 310 stationary, 7, it may take the form of reciprocating the process region 310 or going through the process region 310. [ That is, the process performed in the vacuum chamber 300 may be performed while the substrate S is stationary in the process region 310, or when the substrate S reciprocates in the process region 310 or the substrate S May pass through the process region 310. In this case,

To this end, a loading transfer means 320 is provided inside the vacuum chamber 300 for loading or moving the substrate S. The stack transporting means 320 includes a stacking portion 321 for stacking the substrate S in the processing region 310 and a substrate transferring portion 325 for supplying and discharging the substrate S to and from the stacking portion 321. [ ).

The mounting portion 321 is provided in the process region 310 adjacent to the electrode unit 600 and may be provided on one side of the electrode unit 600 when the surface to be processed of the substrate S is one side The stacking unit 321 can be positioned on both sides of the stacking unit 321 to provide the electrode unit 600 when the surface of the substrate S to be processed is both surfaces.

The loading unit 321 includes a loading table 323 on which the substrate S is loaded and loading temperature adjusting means 322 for holding the substrate S loaded on the loading table 323 at a constant temperature according to the type of process and conditions 324, which may be means for cooling or heating the substrate S or means for keeping it at normal temperature.

The stage 323 is provided with a fixed holder (not shown) for fixing the substrate S when the substrate S is fixed in the processing area 310 as described above .

Alternatively, when carrying out the process in a state in which the substrate S is reciprocated in both directions as described above, the stage 323 may be configured to reciprocate the substrate S using the substrate transfer section 325 described later . In this case, the region corresponding to the electrode unit 600 and the region corresponding to the interval between the electrode units 600 in the process target surface of the substrate S are repeatedly moved reciprocally to the region where the plasma is formed by the electrode unit 600 It is possible to perform a high-quality plasma chemical vapor phase process at a high speed uniform over the entire area of the substrate S.

The stage 323 may be conveyed and supported in the form of moving the substrate S in one direction from the supply side to the discharge side of the vacuum chamber 300, as described above. In this case as well, the high-quality plasma chemical vapor phase process can be performed at a high speed uniformly over the entire area of the substrate S while the substrate S is transferred.

In addition, the loading table 323 may be provided to be reciprocally movable to a position apart from a position where the loading table 323 approaches the electrode unit 600 side as occasion demands. This is so that the intensity of the plasma toward the substrate S can be controlled by the change in distance between the substrate S and the electrode 610.

The substrate S to be mounted on the mounting portion 321 may be a variety of materials such as a glass substrate, a ceramic substrate, a semiconductor substrate, a metal substrate, a plastic substrate or film, a paper or nonwoven fabric, or a fiber. The surface to be processed of the base material S may be the surface of the base material S and may be a film formed on the surface of the base material S. [

The substrate transferring unit 325 includes a substrate supply unit (not shown) for transferring the substrate S to the loading unit 321 and a substrate discharge unit (not shown) for discharging the substrate S to the outside of the loading unit 321 Not shown). The substrate supplying unit (not shown) and the substrate discharging unit (not shown) may be configured in various forms including a flat roller and a driving motor (not shown).

Here, the substrate transferring section 325 (not shown) performs only the supply and discharge operations of the substrate S so that the substrate S is fixed to the loading section 321, Or the substrate S may be caused to reciprocate during the process on the loading section 321 for improving process quality. It is also possible to move the substrate S from the supply side to the discharge side via the loading portion 321 so that the substrate S is passed through the loading portion 321 and the process is performed.

Of course, the substrate transferring section 325 (not shown) may be omitted in some cases. In this case, the worker directly opens and closes the vacuum chamber 300 to load the substrate S on the loading section 321 It may be removed. At this time, the internal vacuum degree of the vacuum chamber 300 becomes equal to the atmospheric pressure, which is not preferable for the continuous process.

11, in the case of a roll-to-roll type apparatus, the substrate transfer section 325 includes a supply roll 326 on which a substrate S is wound as a substrate supply section, A plurality of guide rolls 328 for guiding the substrate S from the supply roll 326 to the recovery roll 327 via the processing region 310, And may include at least one drum 329 disposed adjacent the electrode unit 600 in the process region 310 and around which the substrate S may be wound. The drum 329 may include a drum temperature adjusting means having cooling or heating or a room temperature holding function so as to maintain the base material S at a constant temperature depending on the type of process and conditions.

2, 3, and 11, plasma is generated in the vacuum chamber 300 to block the plasma generated in the electrode unit 600 from being generated in an unnecessary region other than the process region 310. In addition, Block 330 is provided.

When power is supplied to the electrode unit 600, the plasma is concentrated in the magnetic field concentrated region formed on the outer side of the electrode 610 by the magnetic field generating member 640, and the plasma is concentrated in the region outside the electrode 610, An unnecessary remaining plasma is formed due to the influence of the magnetic field in the plasma unnecessary region other than the region 310. This unnecessary plasma forming region reduces the use period of the electrode 610 by depositing the particles during the process.

The plasma blocking block 330 forms the same potential and different potential difference as the vacuum chamber 300 by floating or grounding an area where plasma formation is unnecessary to the vacuum chamber 300 as described above, And unnecessary plasma formed on the outside of the electrode 610 is removed.

The plasma cutoff block 330 has a plasma cutoff region 331 which is recessed to surround a part of the outer circumference of the electrode 610 corresponding to the region other than the process region 310 with the gap G therebetween. At this time, the gap G between the recessed surface of the plasma cut-off region 331 and the outer surface of the electrode 610 is formed to have a proper distance within the range of 0.5 mm to 100 mm.

The plasma cut-off region 331 has a section corresponding to a cross-sectional shape of the outer circumferential surface of the electrode 610 in section, and the plasma cut-off region 331 has a circular arc cross-section when the electrode 610 is circular . Of course, the plasma cut-off region 331 may have a cross-sectional shape such as an arc-shaped cross-section, an elliptic cross-section, or a polygonal cross-section having a predetermined angle in cross section along the cross section of the electrode 610.

The plasma cutoff region 331 is formed in the plasma cutoff block 330 at a number and an interval corresponding to the number of the electrode units 600 and the spacing between the electrode units 600.

At this time, if there are a plurality of plasma cut-off areas 331 spaced from each other, a block connection area 333 facing the process area 310 may be formed between adjacent plasma cut-off areas 331. The block connection areas 333 Preferably has a predetermined surface roughness 335 (surface roughness or surface pattern) so that the particles can be adhered with a stronger adhesion force when the particles generated in the course of the process are deposited. This is to prevent the particles inevitably deposited on the plasma cut-off block 330 from peeling off during the process operation to damage the surface of the substrate S.

The plasma cutoff block 330 is provided so as to correspond to the arrangement of the electrode unit 600 provided on one side of the process region 310 when the target surface of the substrate S is a single surface, It is possible to correspond to the arrangement of the electrode unit 600 provided on both sides of the process region 310 when the surface of the substrate S to be processed is both surfaces. The plasma cutoff block 330 may be a vacuum cutoff valve in which the electrode unit 600 is disposed outside the drum 329 while the plasma chemical vapor deposition apparatus 1 according to the present invention is roll- It may be provided in the chamber 300.

The provision of the plasma block 330 prevents the plasma from being formed in the plasma unnecessary region rather than the process region 310, thereby preventing the particles from being deposited on the outer circumferential surface of the electrode 610 in the plasma- can do. As a result, the use period of the electrode 610 is remarkably extended and the operation rate of the plasma chemical vapor deposition apparatus 1 is increased.

The vacuum regulator 400 may include a vacuum pump, a valve, or the like connected in a suitable form. A vacuum pump 410 and a high vacuum pump 420 and a plurality of valves 430 for controlling the pressure so that the vacuum exhaust can be performed from a low vacuum to a high vacuum in the process of controlling the degree of vacuum in the vacuum chamber 300. [ ), And the like. The degree of vacuum inside the vacuum chamber 300 controlled by the vacuum regulator 400 may be adjusted to suitably set and maintained in the range of 0.1 Pa to 100 Pa.

At this time, a load lock chamber (not shown) via a gate valve (not shown) is provided on the supply side and the discharge side of the substrate S of the vacuum chamber 300, and the vacuum chamber 300 ) Can be continuously performed in a state in which the vacuum degree of the internal vacuum degree is maintained.

The gas supply unit 500 supplies the process gas into the vacuum chamber 300. The gas supply unit 500 includes a gas supply source 510 for supplying the process gas into the vacuum chamber 300 and a gas supply flow channel 520 extending from the gas supply source 510 to the inside of the vacuum chamber 300, And a nozzle means 530 for supplying the process gas supplied through the gas supply channel 520 to the process region inside the vacuum chamber 300. The gas supply regulator 530 for opening and closing the gas supply channel 520 540 may include a gas flow controller 541, a vacuum gauge 542, a valve 543, and the like.

In the case where the plasma CVD apparatus 1 according to the present invention is a film forming apparatus for performing a film forming process, the process gas supplied from the gas supply source 510 to the nozzle means 530 includes Si as a raw material gas for film formation Such as HMDSO, TEOS, SiH ₄ , dimethylsilane, trimethylsilane, tetramethylsilane, HMDS, TMOS and the like, containing C, methane, ethane, ethylene, acetylene and the like. In addition, various raw material gases can be appropriately selected depending on the type of the film including titanium tetrachloride containing Ti and the like.

As the reaction gas, oxygen, ozone, or nitrous oxide may be used for oxide formation, and nitrogen, ammonia, or the like may be appropriately selected for forming the nitride depending on the kind of the film. As the auxiliary gas, Ar, He, H _2, or the like can be selectively used, and various auxiliary gases can be selectively used depending on the kind of the deposition. The deposition gas suitable for the deposition process to be performed is not limited.

Alternatively, in the case where the plasma chemical vapor deposition apparatus 1 according to the present invention is an etching apparatus for performing an etching process, the etching gas as a process gas may be formed on the substrate S to be etched or the material of the thin film formed on the substrate S Lt; / RTI > For example, the etching gas may include Cl-based gases such as Cl2 and BCl3, and F-based gases such as CF4, SF6, and NF3. In addition, various etching gases such as HF, hfacH, XeF2, Acetone, NH3, and CH4 may be selected. That is, the etching gas suitable for the etching process to be performed is not limited. In the case of the etching process, a mask corresponding to the etching pattern may be included on the surface of the substrate S.

Alternatively, when the plasma chemical vapor deposition apparatus 1 according to the present invention is a surface treatment apparatus for performing a surface treatment process, various process gases may be used in the application for changing the surface characteristics of the substrate S as the process gas. For example, the gases for the pre-treatment use can be gases such as Ar, H2, O2, N2, He, CF4, NF3 and the like, and gases such as Ar, O2 and CF4 can be used for the ashing gas. The process gas suitable for the surface treatment process to be performed is not limited.

The gas supply passage 520 may extend from the gas supply source 510 toward the nozzle means 530 disposed in a plurality of regions inside the vacuum chamber 300 and may be provided on the gas supply passage 520, (540), a gas flow controller, a vacuum gauge, a valve, and the like.

On the other hand, the nozzle means 530 can be arranged in various forms such as nozzles and nozzle holes in a process region preferable for performing a high-quality process.

The electrode unit 600 includes a hollow electrode 610 and at least one magnetic field generating member 640 provided inside the electrode 610 and forming a magnetic field in the process region 310 outside the electrode 610 And a part of the electrode 610 is partially accommodated in the plasma cut-off area 331 of the plasma cut-off block 330. At this time, the electrode unit 600 may be provided as a plurality of or a single electrode unit 600 corresponding to the plasma cut-off region 331. Each of the electrode units 600 may be provided in such a manner that the electrodes 610 are continuously rotated or stepwise rotated by a predetermined angle at regular intervals. For this purpose, a motor may be provided. Of course, the electrode unit 600 may be installed in a non-rotating fixed form.

The electrode 610 may be made of ceramics, polymers, plastics, or an insulating metal material having excellent plasma resistance, heat resistance, and thermal conductivity according to use of the plasma chemical vapor deposition apparatus 1 and having an insulating property, and may be a non-magnetic substance or a magnetic substance Metal materials such as aluminum, iron, copper, stainless steel, magnesium, MO, and Ti may be used. The material of the electrode 610 may be the entire material of the electrode 610 or may be the material of the peripheral surface of the electrode 610.

A heat exchange fluid W may be flowed into the electrode 610. The flow space 614 of the heat exchange fluid W passes through the inner pipe 612 and the outer pipe 613 as shown in FIG. A space between the inner pipe 612 and the outer pipe 613 may be provided as a heat exchange fluid flow space 614. [ In this case, the magnetic field generating member 640 may be accommodated in the inner tube 612 so as not to be in contact with the heat exchange fluid W.

Of course, as shown in FIG. 4 and the like, the electrode 610 is provided as a single hollow tube and the heat exchange fluid W can be perfused therein. In this case, the self-generating member should be shielded from coming into contact with the heat exchange fluid (W).

The electrode 610 has a diameter of 10 mm to 2000 mm and the electrode 610 has a length of 10 mm to 200 mm. And the tube thickness of the electrode 610 (at least the thickness of the outer tube when the electrode is a double tube) can be appropriately selected within the range of 2 mm to 100 mm. In this case, when a plurality of electrodes 610 are provided in the process region 310, all the electrodes 610 may have the same diameter or different diameters. 7, by arranging the diameter of the electrode 610 corresponding to both sides of the base material S in the longitudinal direction to be larger than the diameter of the other electrode 610, the process is performed in the longitudinal edge area of the base material S It can be prevented from becoming vulnerable.

In addition, each one electrode 610 may have a shape having a single uniform diameter between its axial longitudinal sides, and each one electrode 610 may have a shape having a different diameter along the axial length direction. For example, both sides in the axial direction of each of the electrodes 610 may have a larger diameter than the remaining sections. In this case, it is possible to prevent the process operation from being weakened in the widthwise edge areas of the substrate S.

The electrodes 610 may have a circular cross section or a polygonal cross section or an elliptical cross section, as shown in the drawings, And the like.

When the electrode 610 is a hollow body having a circular cross-section, the electrode 610 is preferable for the continuous rotation or the stepwise rotation. When the electrode 610 continuously rotates, the rotation speed is in the range of 0.1 rotation per minute to 30,000 rotation per minute Can be set. In this case, the electrodes 610 may rotate in the same direction or may rotate in different directions.

On the other hand, when the electrode 610 is a hollow body having a polygonal or elliptic cross section, the electrode 610 may be preferable for the stepwise rotation or stopping. When the electrode 610 is in the stepwise rotation mode, the step rotation angle is preferably set in the range of 1 degree to 180 degrees.

The magnetic field generating member 640 may include a magnetic field generating member 640 or a plurality of magnetic field generating members 640 disposed inside the electrode 610 as shown in FIGS. 1 and 6 to 9, And forms a magnetic field in the region 310. The magnetic field generating member 640 may be fixed to the inside of the electrode 610 or may be provided to be adjustable in the rotational angle so as to adjust the direction of the magnetic field as shown in FIG.

Each magnetic field generating member 640 includes a central magnet 641 having a length corresponding to the length of the electrode 610 and a central magnet 641 surrounding the central magnet 641 in a track shape or a central magnet 641 It is preferable to have the outer magnet 642 disposed on both sides. When the outer magnet 642 has a track shape, a plasma track having a race track shape can be generated outside the electrode 610. At this time, the polarity arrangement of the center magnet 641 and the outer magnet 642 of the magnetic field generating member 640 may have various polarity arrangements within a range where the plasma can stably be concentrated in a desired region. At this time, the magnetic flux density of the magnets 641 and 642 can be selected within the range of 10 Gauss to 10000 Gauss.

In addition, the magnetic field generating member 640 may be installed to be reciprocally movable to a position spaced apart from a position where the magnetic field generating member 640 approaches the inner circumferential surface of the electrode 610, as shown in FIG.

The distance adjusting means 643 may be realized by a constitution including a distance adjusting means 643 for reciprocating the magnetic field generating member 640 in the radial direction of the electrode 610. The distance adjusting means 643 is provided for the reciprocating movement of the magnets 641, A guide portion 644 for supporting the movement and a distance adjusting portion 647 for moving the magnets 641 and 642 so as to adjust the moving distance with respect to the guide portion 644. [

At this time, the guide portion 644 is moved relative to the fixed guide 645 while supporting the fixed guides 645 from the central area of the electrode 610 toward one side of the inner peripheral surface of the electrode 610 and the magnets 641 and 642 And a rolling means such as a rolling roller or a bearing for smooth relative movement may be interposed between the fixed guide 645 and the moving guide 646. [

The distance adjusting unit 647 provides a driving force for relatively moving the movement guide 646 relative to the fixed guide 645. The distance adjusting unit 647 adjusts the movement guide 646 to the inner peripheral surface of the electrode 610 (Not shown) for driving the driving gear or the cylindrical cam by a motor including a solenoid or a cylinder, a driving gear, a cam, a driven gear, or a cam as a driving force transmitting means (not shown) And the like can be provided.

Of course, the distance adjusting unit 647 forms a stopper structure (not shown) between the fixed guide 645 and the movement guide 646, and the operator manually opens the electrode 610 to manually move the movement guide 646 May be a passive configuration that adjusts < / RTI >

In addition, the magnetic field generating member 640 may be fixed to the inside of the electrode 610 as described above, or may be provided in a form capable of adjusting the rotation angle before the start of the process or during the process. When the magnetic field generating member 640 is fixed, only the electrode 610 may be rotated. When the magnetic field generating member 640 is rotated to adjust the rotation angle, the angle adjusting unit 648 may be provided, The rotational angle of the rotor 640 can be adjusted automatically or manually. At this time, the automatic adjustment of the angle adjusting means 648 includes the rotation support member 649 for supporting the magnetic field generating member 640 on the rotation axis 611 provided at the center of the electrode 610, And the rotation shaft 611 is rotated using the rotation shaft 611. In this case, the motor (not shown) may also be used to rotate the electrode 610 in addition to the rotation angle control of the magnetic field generating member 640, including a clutch (not shown).

The rotation angle of the magnetic field generating member 640 may be adjusted or arranged in various manners such that the magnets 641 and 642 face the base S and the magnets 641 and 642 provided inside the two side electrodes 610, May be in the form of a respective adjustment or arrangement. For example, in the case where the magnets 641 and 642 face the substrate S, a magnetic field is formed on the substrate S side so that the plasma is concentrated toward the substrate S. Therefore, the surface of the substrate S or the thin film formed before the substrate S It is suitable for plasma damage resistant type. In the case where the magnets 641 and 642 provided inside mutually adjacent side electrodes 610 are opposed to each other, the plasma is concentrated between the electrodes 610 in a region separated from the substrate S, The thin film formed before the base material S is suitable for the process of not suffering plasma damage.

The distance adjustment and rotation angle control of the magnetic field generating member 640 adjusts the shape and strength of the magnetic field depending on the material of the substrate S and the condition of the process so that the speed and the plasma intensity of the process are appropriately adjusted . Thus, the speed and the process quality of the process can be easily adjusted in a form optimized for the process, so that the quality and production efficiency of the product produced in the process can be remarkably improved.

The electrode unit 600 including the electrode 610 and the magnetic field generating member 640 provided inside the electrode 610 is formed so that the surface of the substrate S to be processed is a single surface When the substrate S is to be processed on both sides, as shown in Figs. 8 to 9, a single or a plurality of the substrates S are arranged on both sides of the stacking unit 321 .

As described above, the electrode unit 600 may be disposed on the side of the substrate S to be processed, and depending on the case where the substrate S is provided with the hard substrate S, A plasma may be formed on the surface to be processed of the substrate S by being disposed adjacent to the opposite surface of the target surface.

In the case where the electrode unit 600 is disposed on the opposite surface of the substrate S to be processed so as to form a plasma on the surface to be processed of the substrate S, It is preferable to maintain the gap between the substrate S and the electrode 610 while preventing the substrate S from being damaged by the contact between the substrate S and the electrode 610, Is a range for densifying the plasma on the process target surface of the substrate S as a surface. When the gap between the electrode 610 and the substrate S is larger than the range of 2 to 3 mm, the plasma is formed on the back surface of the substrate S rather than the surface to be processed, which is not preferable.

When the position of the electrode 610 is arranged on the opposite surface of the substrate S to be processed and the plasma is concentrated on the surface of the substrate S, the process of the hard substrate S Processes such as film deposition, etching, and surface treatment can be performed stably and quickly on the object surface.

On the other hand, the power supply unit 700 supplies a power for generating plasma to the electrode 610. Here, the power source may be an AC power source or a DC power source depending on the type of process. In order to form a high-density plasma as a high frequency AC power source in the case of an AC power source, a high frequency (AC) power source of 3 to 30 MHz frequency, High Frequency: AC power of 30 ~ 300 MHz) can be used. In some cases, RF power can be used. For a DC power source, either a unipolar or bipolar pulsed DC power source may be used.

The polarity of the power source can selectively connect the positive electrode (+) or the negative electrode (-) to the electrode (610) in consideration of the plasma and the process quality.

According to the plasma chemical vapor deposition apparatus 1 according to the present invention having such a configuration, by providing the plasma cutoff block 330, the plasma is not formed in the plasma unnecessary region other than the process region 310, It is possible to prevent particles from being deposited on the outer circumferential surface of the electrode 610 in the plasma unnecessary region. As a result, the use period of the electrode 610 is remarkably extended, and the operating rate of the plasma chemical vapor deposition apparatus is further increased.

300: Vacuum chamber 310: Process area
321: Loading section 325:
330: Plasma blocking block 331: Plasma blocking area
400: Vacuum control unit 500: Gas supply unit
530: Nozzle means 600: Electrode unit
610: electrode 640: magnetic field generating member
700: Power supply part S: Equipment

Claims (9)

In a plasma chemical vapor deposition apparatus,
A vacuum chamber having a process region in which a substrate is located;
A vacuum controller for controlling a degree of vacuum in the vacuum chamber;
A gas supply unit for supplying a process gas into the vacuum chamber;
At least one electrode unit installed in the vacuum chamber to form a plasma in the process region;
A power supply unit for supplying power to the electrode unit;
And a plasma blocking block provided inside the vacuum chamber to block plasma generated in the electrode unit from being generated in an unnecessary region outside the process region,
Wherein the plasma cut-off block has a plasma cut-off region recessed in a shape corresponding to a part of an outer circumferential portion of the electrode unit so as to surround a part of an outer circumferential portion of the electrode unit corresponding to a region other than the process region with a gap therebetween Plasma chemical vapor phase apparatus. The method according to claim 1,
Wherein the plasma blocking block is floating or grounded relative to the vacuum chamber. ≪ RTI ID = 0.0 > 8. < / RTI > delete The method according to claim 1,
Wherein the gap is 0.5 mm to 100 mm. The method according to claim 1,
Wherein the plurality of electrode units are provided, and the plasma cut-off region is provided in a number corresponding to the electrode unit. The method according to claim 1,
And a block connection region facing the process region is formed between the plasma cut-off regions. The method according to claim 6,
Wherein the surface of the block connecting region has a surface roughness. The method according to claim 1,
The electrode unit
A hollow body electrode, and at least one magnetic field generating member provided inside the electrode and forming a magnetic field outside the electrode. The method according to any one of claims 1, 2, and 4 to 8,
A feed roll for feeding the wound substrate to the process area,
A drum which is provided in the process area and on which the substrate is wound,
Further comprising: a recovery roll for winding the drum and winding the substrate through the processing area;
Wherein at least one of the electrode units is arranged to form a plasma in the process region in an area adjacent to the drum.

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